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Diofet products

DIOFET is a proprietary process that monolithically integrates a power MOSFET with a Schottky diode into a single Silicon chip. The integrated Schottky reduces the forward voltage drop of the body diode by almost 50% and also has a lower reverse recovery charge.

Diofet

In application, this means the conduction and switching losses are reduced, and overall the circuit will operate at a higher efficiency with a reduced operating temperature. In addition, the DIOFET is an avalanche rugged process and the devices have a low gate capacitance ratio to reduce the risk of shoot-through currents.

The DIOFET is well suited for Point of Load (PoL) DC-DC converters used in computing, telecoms and industrial applications including:


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Data Sheet Part Number Config/
Polarity
ESD Diode
Y/N
VDS
V
VGS
±V
IDS
@TA = 25ºC
A
PD
@TA = 25ºC
W
RDS(on) Max (mΩ) @ VGS CISS typ.
@VDS = 15V
pF
Qg typ.
@VGS = 10V
pF
Package Outlines
10V 4.5V
Change Layout
 
DMG4710SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 12.7 1.54 12.5 14.8 1849 43
SO-8
DMG4712SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 11.2 1.55 14.0 15.4 2296 46
SO-8
DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 8 1.54 15 18.5 1849 43
SO-8
DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Dual N Channel N 30 12
25
9.5 1.19 15 18 1932
675
42
16
SO-8
DMG7702SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N Channel N 30 20 16 0.89 10 15 1296 31.6
POWERDI3333-8
DMS3012SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N Channel N 30 20 16 0.89 10 15 1296 31.6
POWERDI3333-8
DMS3014SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
N Channel N 30 12 10.2 1 13 14 2296 19.3
POWERDI3333-8
DMS3014SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 10.4 1.55 13 14 2296 45.7
SO-8
DMS3015SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 20 11 1.55 11.9 14.9 1276 30.6
SO-8
DMS3016SFG
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N Channel N 30 12 10.2 0.98 13 16 1886 44.6
POWERDI3333-8
DMS3016SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 9.8 1.54 13 16 1849 43
SO-8
DMS3017SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Dual N Channel N 30 20 10
7.2
1.79 12 15 1276
478.9
30.6
10.5
SO-8
DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Dual N Channel N 30 12
20
9.0
7.0
1.79 15 18 1932
478.9
42.0
10.5
SO-8
Total Found 13 items.
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