* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. * *DIODES_INC_SPICE_MODEL *SIMULATOR=PSPICE *DATE=13/04/2018 .SUBCKT BZT585B5V1T 1 2 D1 1 2 DF D2 2 1 DR D3 1 2 DR2 .model DF D(IS=.000015n RS=0.32 CJO=200p M=0.5 VJ=0.4 N=1.1 IKF=120m TT=40n EG=1.13 TRS1=.2m) .model DR D(IS=0.46p RS=1.75 N=7.3 IKF=4u T_ABS=25) .model DR2 D(BV=5.1 IBV=100n RS=2.05 NBV=1.2 IBVL=50m TBV1=-1.72m N=100) .ENDS *---------- DMN24H11DSQ Spice Model ---------- .SUBCKT DMN24H11DSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 4.188 RS 30 3 0.001 RG 20 2 17.89 CGS 2 3 6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.6 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5961 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.416E-011 VJ = 0.8 M = 0.7743 .MODEL DSUB D IS = 3.832E-010 N = 1.437 RS = 0.08015 BV = 300 CJO = 6E-011 VJ = 0.6 M = 0.7028 TT=2.3E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN24H11DSQ Spice Model v1.0 Last Revised 2018/2/21 *DIODES_INC_SPICE_MODEL DMN6068SE N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=21Dec2011 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN6068 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 380E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 426E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 2n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS ********************************************************************************************************************* *SRC=10A01;DI_10A01;Diodes;Si; 50.0V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A01 D ( IS=844n RS=2.06m BV=50.0 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A02;DI_10A02;Diodes;Si; 100V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A02 D ( IS=844n RS=2.06m BV=100 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A03;DI_10A03;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A03 D ( IS=844n RS=2.06m BV=200 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A04;DI_10A04;Diodes;Si; 400V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A04 D ( IS=844n RS=2.06m BV=400 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A05;DI_10A05;Diodes;Si; 600V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A05 D ( IS=844n RS=2.06m BV=600 IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A06;DI_10A06;Diodes;Si; 800V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A06 D ( IS=844n RS=2.06m BV=800 IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* ********************************************************************************************************************* *SRC=10A07;DI_10A07;Diodes;Si; 1.00kV 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A07 D ( IS=844n RS=2.06m BV=1.00k IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* *SRC=1N4001;DI_1N4001;Diodes;Si; 50.0V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4001 D ( IS=76.9p RS=42.0m BV=50.0 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4001G;DI_1N4001G;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4001G D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4002;DI_1N4002;Diodes;Si; 100V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4002 D ( IS=76.9p RS=42.0m BV=100 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4002G;DI_1N4002G;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4002G D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4003;DI_1N4003;Diodes;Si; 200V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4003 D ( IS=76.9p RS=42.0m BV=200 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4003G;DI_1N4003G;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4003G D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4004;DI_1N4004;Diodes;Si; 400V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4004 D ( IS=76.9p RS=42.0m BV=400 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4004G;DI_1N4004G;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4004G D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4005;DI_1N4005;Diodes;Si; 600V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4005 D ( IS=76.9p RS=42.0m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4005G;DI_1N4005G;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4005G D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4006;DI_1N4006;Diodes;Si; 800V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4006 D ( IS=76.9p RS=42.0m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4006G;DI_1N4006G;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4006G D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4007;DI_1N4007;Diodes;Si; 1.00kV 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4007 D ( IS=76.9p RS=42.0m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4007G;DI_1N4007G;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4007G D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) ************************************************************************************************************************************** *SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. .MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. .MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4148WT;DI_1N4148WT;Diodes;Si; 80.0V 0.125A 4.00ns Diodes Inc. Switching .MODEL DI_1N4148WT D ( IS=10.4n RS=51.5m BV=80.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HLP D ( IS=3.2n RS=0.761 BV=100.0 IBV=100n ISR=5n + CJO=1.3p M=0.21 VJ=.5 N=1.88 TT=3n ) *SRC=1N4448HWS;DI_1N4448HWS;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HWS D ( IS=24.7n RS=84.4m BV=80.0 IBV=100n + CJO=3.50p M=0.333 N=2.12 TT=5.76n ) *SRC=1N4448HWT;DI_1N4448HWT;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching .MODEL DI_1N4448HWT D ( IS=137f RS=0.168 BV=80.0 IBV=100n + CJO=3.56p M=0.333 N=1.11 TT=5.76n ) *SRC=1N4448W;DI_1N4448W;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. .MODEL DI_1N4448W D ( IS=355p RS=0.168 BV=75.0 IBV=2.50u + CJO=4.00p M=0.333 N=1.70 TT=5.76n ) *SRC=1N4448WS;DI_1N4448WS;Diodes;Si; 75.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448WS D ( IS=24.7n RS=84.4m BV=75.0 IBV=2.50u + CJO=4.00p M=0.333 N=2.12 TT=5.76n ) *SRC=1N4933;DI_1N4933;Diodes;Si; 50.0V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4933 D ( IS=830n RS=34.0m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4934;DI_1N4934;Diodes;Si; 100V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4934 D ( IS=830n RS=34.0m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4935;DI_1N4935;Diodes;Si; 200V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4935 D ( IS=830n RS=34.0m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4936;DI_1N4936;Diodes;Si; 400V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4936 D ( IS=830n RS=34.0m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4937;DI_1N4937;Diodes;Si; 600V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4937 D ( IS=830n RS=34.0m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N5400;DI_1N5400;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5400 D ( IS=63.0n RS=14.1m BV=50.0 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5401;DI_1N5401;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5401 D ( IS=63.0n RS=14.1m BV=100 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5402;DI_1N5402;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5402 D ( IS=63.0n RS=14.1m BV=200 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5404;DI_1N5404;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5404 D ( IS=63.0n RS=14.1m BV=400 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5406;DI_1N5406;Diodes;Si; 600V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5406 D ( IS=63.0n RS=14.1m BV=600 IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5407;DI_1N5407;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5407 D ( IS=63.0n RS=14.1m BV=800 IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5408;DI_1N5408;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5408 D ( IS=63.0n RS=14.1m BV=1.00k IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5711WS;DI_1N5711WS;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. .MODEL DI_1N5711WS D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=2.03 TT=1.44n ) *SRC=1N5817;DI_1N5817;Diodes;Si; 20.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5817 D ( IS=870u RS=81.3m BV=20.0 IBV=1.00m + CJO=203p M=0.333 N=1.81 TT=4.32u ) *SRC=1N5818;DI_1N5818;Diodes;Si; 30.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5818 D ( IS=263u RS=73.1m BV=30.0 IBV=1.00m + CJO=203p M=0.333 N=1.90 TT=4.32u ) *SRC=1N5819;DI_1N5819;Diodes;Si; 40.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5819 D ( IS=390n RS=0.115 BV=40.0 IBV=1.00m + CJO=203p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5819HW;DI_1N5819HW;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_1N5819HW D ( IS=191u RS=42.0m BV=40.0 IBV=1.00m + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=1N6263W;DI_1N6263W;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_1N6263W D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=23/12/2014 *VERSION=1 .model 1SMB5929B D(IS=1n RS=0.1 CJO=1800p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=10u BV=15 NBV=10 IBV=25m TT=40n EG=.84 TRS1=.1m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=1SS361UDJ; 80V 0.3A 4.0ns Diodes Inc. Switching Diode D1 1 = A 2 = C DI_1SS361UDJ .MODEL DI_1SS361UDJ D + IS = 2.0n + N = 1.83 + BV = 80 + IBV = 1.00u + RS = 0.7 + CJO = 0.71p + VJ = 5m + M = 9m + FC = 0.5 + TT = 4n *DIODES_INC_SPICE_MODEL_DA1201Y *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=06/07/2012 *VERSION=1 .MODEL DA1201Y PNP IS=1.6E-13 NF=1 BF=210 VAF=175 ISE=3E-14 IKF=4.2 + NE=1.4 BR=12 VAR=5.15 ISC=1E-13 NC=1.08 IKR=0.7 RC=0.013 RB=0.2 RE=0.016 + QUASIMOD=1 RCO=4 GAMMA=1.4E-8 CJC=42E-12 MJC=0.32 VJC=0.44 CJE=237E-12 + MJE=0.44 VJE=0.85 TF=0.95E-9 TR=22E-8 TRC1=.005 TRB1=.005 TRE1=.005 XTB=1.4 * *DIODES_INC_SPICE_MODEL_DA1201Y *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=06/07/2012 *VERSION=1 .MODEL DA1201Y PNP IS=1.6E-13 NF=1 BF=210 VAF=175 ISE=3E-14 IKF=4.2 + NE=1.4 BR=12 VAR=5.15 ISC=1E-13 NC=1.08 IKR=0.7 RC=0.013 RB=0.2 RE=0.016 + QUASIMOD=1 RCO=4 GAMMA=1.4E-8 CJC=42E-12 MJC=0.32 VJC=0.44 CJE=237E-12 + MJE=0.44 VJE=0.85 TF=0.95E-9 TR=22E-8 TRC1=.005 TRB1=.005 TRE1=.005 XTB=1.4 * *SRC=2DA1774R;DI_2DA1774R;BJTs PNP; Si; 50.0V 0.150A 250MHz Diodes Inc. Bipolar Transistor .MODEL DI_2DA1774R PNP (IS=15.2f NF=1.00 BF=523 VAF=127 + IKF=54.7m ISE=3.88p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.710 RB=2.84 RC=0.284 + XTB=1.5 CJE=42.6p VJE=1.10 MJE=0.500 CJC=13.7p VJC=0.300 + MJC=0.300 TF=453p TR=96.4n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DA1797 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13 + NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07 + RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705 + MJC=.46 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DA1797 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13 + NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07 + RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705 + MJC=.46 * *$ *DIODES_INC_SPICE_MODEL_2DA1971 *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/10/2012 *VERSION=2 .MODEL 2DA1971 PNP IS =1.305E-13 NF =1.0004 BF =150 VAF=350 +ISE=7.5E-13 NE =1.5 RCO=20 GAMMA=2.5E-8 QUASIMOD=1 NR =1 +ISC=2E-13 NC =1.8 VAR=30 BR =2.5 RB =.1 RE =.01 RC =.01 +CJC=58E-12 MJC=.56 VJC=.775 CJE=404E-12 TF =1E-9 TR =1200E-9 +XTB=1.7 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=2DB1132R;DI_2DB1132R;BJTs PNP; Si; 32.0V 1.00A 200MHz - .MODEL DI_2DB1132R NPN (IS=3.90f NF=1.00 BF=302 VAF=102 + IKF=0.989 ISE=6.63f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=96.5m RB=0.386 RC=38.6m + XTB=1.5 CJE=127p VJE=1.10 MJE=0.500 CJC=32.4p VJC=0.300 + MJC=0.300 TF=741p TR=123n EG=1.12 ) *DIODES_INC_SPICE_MODEL 2DB1182Q *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=6Nov2012 *VERSION=1 .MODEL 2DB1182Q PNP (IS=24E-14 NF=1.00 BF=200 ISE=10E-15 NE=1.28 VAF=127 + IKF=3.34 BR=16.00 NR=1.00 ISC=30E-15 NC=1 + VAR=20.0 IKR=5.25 RE=33.2m RB=0.133 RC=33.3m + XTB=1.5 CJE=411p VJE=.75 MJE=0.37 CJC=93.24p VJC=0.500 + MJC=0.3300 TF=1.27n TR=230n EG=1.2 XTI=3) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL 2DB1184Q *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2012 *VERSION=1 .MODEL 2DB1184Q PNP (IS=24E-14 NF=1.00 BF=200 ISE=10E-15 NE=1.28 VAF=127 + IKF=3.34 BR=16.00 NR=1.00 ISC=30E-15 NC=1 + VAR=20.0 IKR=5.25 RE=33.2m RB=0.133 RC=33.3m + XTB=1.5 CJE=411p VJE=.75 MJE=0.37 CJC=93.24p VJC=0.500 + MJC=0.3300 TF=1.27n TR=230n EG=1.2 XTI=3) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DB1694 PNP IS=2.817E-13 BF=550 IKF=0.63 VAF=28.4 + ISE=4.76E-14 NE=1.492 BR=42 IKR=0.293 VAR=10.21 ISC=2.7E-14 + NC=1.124 RB=0.173 RE=0.171 RC=0.089 CJC=28.5E-12 MJC=0.506 + VJC=0.843 CJE=92E-12 MJE=0.524 VJE=1.021 TF=0.8E-9 TR=20E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=17Jun2013 *VERSION=1 * .MODEL 2DB1713 PNP IS=1.252E-12 NF=1.0119 BF=770 IKF=2.6 VAF=11 +ISE=1.3185E-13 NE=1.4832 NR=1.0047 BR=350 IKR=0.32 VAR=10.5 +ISC=5.2648E-14 NC=1.186 RB=0.053 RE=0.031 RC=0.044 CJC=137E-12 +MJC=0.34 VJC=0.275 CJE=280E-12 TF=0.75E-9 TR=2.3E-9 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DB1714 PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 * *$ *SRC=2DC2412R;DI_2DC2412R;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. Bipolar Transistor .MODEL DI_2DC2412R NPN (IS=15.5f NF=1.00 BF=524 VAF=127 + IKF=54.7m ISE=3.90p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.135 RE=0.290 RB=1.16 RC=0.116 + XTB=1.5 CJE=22.7p VJE=1.10 MJE=0.500 CJC=7.34p VJC=0.300 + MJC=0.300 TF=698p TR=121n EG=1.12 ) *SRC=2DC4617QLP;DI_2DC4617QLP;BJTs NPN; Si; 50.0V 0.100A 200MHz .MODEL DI_2DC4617QLP NPN (IS=1.21f NF=1.00 BF=202 VAF=127 + IKF=98.0m ISE=5.55f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.575 RB=2.30 RC=0.230 + XTB=1.5 CJE=15.6p VJE=1.10 MJE=0.500 CJC=6.12p VJC=0.300 + MJC=0.300 TF=765p TR=126n EG=1.12 ) *SRC=2DC4617R;DI_2DC4617R;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. Bipolar Transistor .MODEL DI_2DC4617R NPN (IS=15.5f NF=1.00 BF=524 VAF=127 + IKF=54.7m ISE=3.90p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.135 RE=0.290 RB=1.16 RC=0.116 + XTB=1.5 CJE=22.7p VJE=1.10 MJE=0.500 CJC=7.34p VJC=0.300 + MJC=0.300 TF=698p TR=121n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DC4672 NPN IS=2.218E-13 NF=.9956 BF=230 IKF=2 VAF=100 ISE=2.9E-14 + NE=1.35 NR=.995 BR=56 IKR=1 VAR=30 ISC=2.971E-13 NC=1.321 RB=.04 + RE=.075 RC=.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF=.77E-9 + TR=27E-9 * *$ * *DIODES_INC_SPICE_MODEL 2DD1664R *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=14/07/2014 *VERSION=1 .MODEL DD1664R NPN IS=150E-15 NF=1 BF=224 + ISE=1E-15 NE=1.35 NR=1 BR=28 ISC=6E-14 IKF=5 NK=.52 VAF=30 + NC=1.3 RB=0.5 RE=0.1 RC=0.134 QUASIMOD=1 RCO=1 GAMMA=50E-11 VO=10 + CJC=36.5E-12 MJC=0.36 VJC=0.55 CJE=139.4E-12 MJE=0.36 VJE=0.7 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.2 *QUASIMOD=1 RCO=80 GAMMA=4E-7 IKR=0.7 VAR=64 *$ * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=2DD1766Q;DI_2DD1766Q;BJTs NPN; Si; 32.0V 2.00A 250MHz - .MODEL DI_2DD1766Q NPN (IS=6.65f NF=1.00 BF=201 VAF=102 + IKF=2.97 ISE=13.0f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=68.7m RB=0.275 RC=27.5m + XTB=1.5 CJE=218p VJE=1.10 MJE=0.500 CJC=41.4p VJC=0.300 + MJC=0.300 TF=538p TR=101n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DD2652 NPN IS=2.66E-13 BF=550 IKF=2.25 VAF=34.6 + ISE=5.7E-14 NE=1.425 BR=280 IKR=0.9 VAR=12.25 + ISC=2.76E-13 NC=1.46 RB=0.22 RE=0.055 RC=0.038 + CJC=34.2E-12 MJC=0.298 VJC=0.441 CJE=103.5E-12 + MJE=0.357 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DD2656 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84 + ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 + NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 + VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DD2661 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DD2678 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DD2679 NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 + NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 + CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 + RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ *---------- 2N7002 Spice Model ---------- .SUBCKT N7002 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.976 RS 30 3 0.001 RG 20 2 160.6 CGS 2 3 2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 2.154 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4654 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 1.2E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 6.808E-010 N = 1.576 RS = 0.1408 BV = 72 CJO = 8E-012 VJ = 0.8 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes N7002 Spice Model v0 Last Revised 2017/2/9 *---------- 2N7002A Spice Model ---------- .SUBCKT 2N7002A 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes 2N7002A Spice Model v1.0 Last Revised 2016/6/15 *---------- 2N7002AQ Spice Model ---------- .SUBCKT 2N7002AQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes 2N7002AQ Spice Model v1.0 Last Revised 2016/6/15 *SRC=2N7002DW;DI_2N7002DW;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET - One element of dual .MODEL DI_2N7002DW NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=34.2u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *---------- 2N7002DWA Spice Model ---------- .SUBCKT N7002DWA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.728 RS 30 3 0.001 RG 20 2 1.23 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.754 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4647 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.923E-009 N = 1.912 RS = 0.08286 BV = 73 CJO = 4E-012 VJ = 0.7586 M = 0.6096 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes N7002DWA Spice Model v1.0M Last Revised 2016/10/4 *---------- 2N7002DWK Spice Model ---------- .SUBCKT 2N7002DWK 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.2 RS 30 3 0.0001 RG 20 2 224.52 CGS 2 3 3.821E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.783 + TOX = 1E-007 NSUB = 1E+015 KP = 1.4 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.528E-011 VJ = 0.5 M = 0.4303 .MODEL DSUB D IS = 4.6E-009 N = 1.746 RS = 0.08691 BV = 81.4 + CJO = 8.143E-012 VJ = 0.6 M = 0.3542 XTI = 0 TT = 4.4E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/11/19 *SRC=2N7002DWQ;DI_2N7002DWQ;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET - One element of dual .MODEL DI_2N7002DWQ NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=34.2u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *---------- 2N7002DWS Spice Model ---------- .SUBCKT 2N7002DWS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.63 RS 30 3 0.001 RG 20 2 900.9 CGS 2 3 3.933E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.084 + TOX = 6E-008 NSUB = 1E+016 KP = 1.27 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.483E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.945E-010 N = 1.613 RS = 0.07371 BV = 76.92 + CJO = 2.987E-011 VJ = 0.8 M = 0.6 TT = 1.04E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002DWS Spice Model v1.0M Last Revised 2019/03/22 *SRC=2N7002E;DI_2N7002E;MOSFETs N;Enh;60.0V 0.240A 4.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002E NMOS( LEVEL=1 VTO=2.50 KP=781u GAMMA=3.10 + PHI=.75 LAMBDA=83.2u RD=0.560 RS=0.560 + IS=120f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *---------- 2N7002EQ Spice Model ---------- .SUBCKT 2N7002EQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.05 RS 30 3 0.0001 RG 20 2 187.9 CGS 2 3 3.193E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.02E-012 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.505 + TOX = 1E-007 NSUB = 1E+015 KP = 0.45 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.55E-011 VJ = 0.5 M = 0.5485 .MODEL DSUB D IS = 2E-009 N = 1.637 RS = 0.138 BV = 82 + CJO = 7.5E-012 VJ = 0.6 M = 0.3558 XTI = 0 TT = 9.03E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/11/25 *---------- 2N7002H Spice Model ---------- .SUBCKT 2N7002H 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1977 RS 30 3 0.001 RG 20 2 134.6 CGS 2 3 2.532E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.072 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3271 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.33E-010 VJ = 0.1 M = 0.9638 .MODEL DSUB D IS = 2.229E-010 N = 1.639 RS = 0.7641 BV = 86.7 CJO = 1.164E-012 VJ = 0.1038 M = 0.4732 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002H Spice Model v1.0 Last Revised 2015/6/29 *SRC=2N7002K;DI_2N7002K;MOSFETs N;Enh;60.0V 0.300A 2.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002K NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=104u RD=0.280 RS=0.280 + IS=150f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002KQ;DI_2N7002KQ;MOSFETs N;Enh;60.0V 0.300A 2.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002KQ NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=104u RD=0.280 RS=0.280 + IS=150f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *---------- 2N7002Q Spice Model ---------- .SUBCKT 2N7002Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.976 RS 30 3 0.001 RG 20 2 160.6 CGS 2 3 2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 2.154 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4654 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 1.2E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 6.808E-010 N = 1.576 RS = 0.1408 BV = 72 CJO = 8E-012 VJ = 0.8 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002Q Spice Model v0 Last Revised 2020/9/18 *---------- 2N7002T Spice Model ---------- .SUBCKT 2N7002T 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.213 RS 30 3 0.001 RG 20 2 71.9 CGS 2 3 1.8E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.885 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4493 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.522E-011 VJ = 0.6 M = 0.7265 .MODEL DSUB D IS = 2.816E-009 N = 1.731 RS = 0.05482 BV = 20 CJO = 5.5E-011 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002T Spice Model v1.0M Last Revised 2016/2/1 *---------- 2N7002VAC Spice Model ---------- .SUBCKT 2N7002VAC 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002VAC Spice Model v1.0M Last Revised 2016/2/23 *---------- 2N7002VC Spice Model ---------- .SUBCKT 2N7002VC 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes 2N7002VC Spice Model v1.0M Last Revised 2016/2/23 *SRC=2N7002W;DI_2N7002W;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET .MODEL DI_2N7002W NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=9/9/2022 *VERSION=1 .SUBCKT 3.0SMCJ14AQ 1 2 * Terminals: A K D1 1 2 D1 R1 1 2 1.774E+09 .model D1 D(IS=1.873n N=1.565 RS=3.174m CJO=29.54n M=0.466 VJ=150m FC=0.5 BV=16.09 IBV=1.8u) .ENDS .SIMULATOR DEFAULT * (c) 2022 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/10/2009 *VERSION=1 *PIN_ORDER C A * .SUBCKT 30SMCJ22A 1 2 D1 2 11 Dmod1 L1 1 11 5E-9 .MODEL Dmod1 D (IS=1E-12 N=1.1 RS=0.01 TRS1=5E-4 CJO=5950E-12 VJ=0.51 + M=0.34 BV=25.3 IBV=100E-6 TBV1=8E-4) .ENDS 30SMCJ22A * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/04/2014 *VERSION=1 .model 30SMCJ28A D(IS=.1u RS=0.1 CJO=1800p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=30 NBV=20 IBV=10u TT=40n EG=.84 TRS1=.1m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/30/2015 *VERSION=1 .model 3_0SMCJ30A D(IS=.1u RS=0.15 CJO=17000p M=1 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=32 NBV=10 IBV=10u TT=4n EG=.84 TRS1=.1m) * (c) 2015 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=6A05;DI_6A05;Diodes;Si; 50.0V 6.00A 2.00us Diodes Inc. .MODEL DI_6A05 D ( IS=52.4n RS=7.00m BV=50.0 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A1;DI_6A1;Diodes;Si; 100V 6.00A 2.00us Diodes Inc. .MODEL DI_6A1 D ( IS=52.4n RS=7.00m BV=100 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A10;DI_6A10;Diodes;Si; 1.00kV 6.00A 2.00us Diodes Inc. .MODEL DI_6A10 D ( IS=52.4n RS=7.00m BV=1.00k IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A2;DI_6A2;Diodes;Si; 200V 6.00A 2.00us Diodes Inc. .MODEL DI_6A2 D ( IS=52.4n RS=7.00m BV=200 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A4;DI_6A4;Diodes;Si; 400V 6.00A 2.00us Diodes Inc. .MODEL DI_6A4 D ( IS=52.4n RS=7.00m BV=400 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A6;DI_6A6;Diodes;Si; 600V 6.00A 2.00us Diodes Inc. .MODEL DI_6A6 D ( IS=52.4n RS=7.00m BV=600 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A8;DI_6A8;Diodes;Si; 800V 6.00A 2.00us Diodes Inc. .MODEL DI_6A8 D ( IS=52.4n RS=7.00m BV=800 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=ABS10A;DI_ABS10A;Diodes;Si; 1000V 1.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_ABS10A D ( IS=3.47n RS=42.6m BV=1000 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=SIMETRIX *DATE=13OCT2019 *VERSION=1 * .MODEL AC847CWQ NPN + IS=10.2f + NF=1.00 + BF=1.09k + VAF=121 + IKF=60.7m + ISE=1.60p + NE=2.00 + BR=4.00 + NR=1.00 + VAR=24.0 + IKR=0.150 + RE=0.915 + RB=3.66 + RC=0.366 + XTB=1.5 + CJE=26.8p + VJE=1.10 + MJE=0.500 + CJC=8.67p + VJC=0.300 + MJC=0.300 + TF=427p + TR=48.6n + EG=1.12 * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability = intrinsic base-intrinsic emitter voltage * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=SIMETRIX *DATE=13OCT2019 *VERSION=1 * .MODEL AC848BQ NPN + IS=10.2f + NF=1.00 + BF=616 + VAF=98.6 + IKF=60.7m + ISE=2.84p + NE=2.00 + BR=4.00 + NR=1.00 + VAR=20.0 + IKR=0.150 + RE=0.915 + RB=3.66 + RC=0.366 + XTB=1.5 + CJE=26.8p + VJE=1.10 + MJE=0.500 + CJC=8.67p + VJC=0.300 + MJC=0.300 + TF=427p + TR=49.1n + EG=1.12 * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability = intrinsic base-intrinsic emitter voltage * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ADC114YUQ Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=16April2019 *VERSION=1 *#SIMETRIX ******************************************************************** *Notes: Pre biased NPN BJT with resistors *NPN; Si; 50.0V 0.150A 200MHz *This subckt includes the resistors. For external resistors use .MODEL QADC1 ******************************************************************** **************** C B E .SUBCKT ADC114YUQ 1 2 3 R1 2 Base Rb 10k R2 Base 3 Re 47k Q1 1 Base 3 QADC1 .MODEL Rb RES + R=1 .MODEL Re RES + R=1 .MODEL QADC1 NPN + IS=16.8f + NF=.98 + BF=766 + VAF=40 + IKF=0.03 + ISE= 100p + NE=2.05 + NKF=0.5 + BR=4.00 + NR=1 + VAR=28.0 + IKR=0.225 + RE=0.2 + RB=12 + RC=0.2 + XTB=1.5 + XTI=3 + CJE=11.3p + VJE=1.10 + MJE=0.500 + CJC=4.50p + VJC=0.300 + MJC=0.300 + TF=549p + TR=119n + EG=1.12 .ENDS ADC114YUQ ****************************************************************************** * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *ADTC114EUAQ Spice model *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE=24January2020 *VERSION=2 *#SIMETRIX ******************************************************************** *Notes: Pre biased NPN BJT with resistors *NPN; Si; 50.0V 0.150A 200MHz *This subckt includes the resistors. For external resistors use .MODEL QADC1 ******************************************************************** **************** C B E .SUBCKT ADTC114EUAQ 1 2 3 R1 2 Base Rb 10k R2 Base 3 Re 10k Q1 1 Base 3 QADC1 .MODEL Rb RES + R=1 .MODEL Re RES + R=1 .MODEL QADC1 NPN + IS=16.8f + NF=.98 + BF=766 + VAF=40 + IKF=0.03 + ISE= 100p + NE=2.05 + NKF=0.5 + BR=4.00 + NR=1 + VAR=28.0 + IKR=0.225 + RE=0.2 + RB=12 + RC=0.2 + XTB=1.5 + XTI=3 + CJE=11.3p + VJE=1.10 + MJE=0.500 + CJC=4.50p + VJC=0.300 + MJC=0.300 + TF=549p + TR=269n; 119n + EG=1.12 .ENDS ADTC114EUAQ ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** * PSpice Model Editor - Version 16.6.0 *************************************************************************************** *************************************************************************************** * * DEVICE : AL3353 - Diodes Incorporated * DATE : 22NOV2019 * SIMULATOR : PSPICE 16.6 * MODEL VERSION : 1.0 * *************************************************************************************** *************************************************************************************** * * DEVICE NOTES: * Following features are been modelled: * 1. Under Voltage Lockout (UVLO) * 2. Output Overvoltage Protection * 3. Overvoltage UVLO Protection * 4. Overcurrent Protection * 5. LED Cathode Short to GND Protection * 5. Inductor or Diode short circuit Protection * 6. Thermal Shutdown * ************************************************************************************** *************************************************************************************** *$ .SUBCKT AL3353 PWM OVP CMP FB VIN GATE GND CS PARAMS: TAMB=27 XU1 PWM OVP CMP FB VIN GATE GND CS Block_1_0 .ENDS *$ .SUBCKT Block_1_0 PWM OVP CMP FB VIN GATE GND CS PARAMS: TAMB={TAMB} IS1 0 CS 50U R70 SHUTDOWN SHUTDOWN_DEL 100 C70 SHUTDOWN_DEL 0 1u IC=0 GComparator 23 0 VALUE = {(((0.2631*V(Ta,0))+((640*(1-V(SHUTDOWN_DEL,0)))+50))*1U)} VCCVS1_in VIN 23 HCCVS1 IQ 0 VCCVS1_in 1 XU9 Ta IC_PD IC_TEMP IC_TEMP_0 XU6 I_GATE_AVG IQ I_GATE IC_PD VIN PD_0 R1 PWM 0 220K ECS1 VCC_INT_J1 0 VALUE = {IF(V(UVLO,0)<0.5,7.2,0)} XU7 SNS_CL SS_Done CS PWM_GATE UVLO OVP VIN PWM CMP SHUTDOWN IC_TEMP + FB_OV_SNS_CL_0 XU1 I_GATE PWM_GATE VCC_INT_J1 GATE DRIVER_0 XU2 PWM_GATE CMP Slope_ramp SHUTDOWN SNS_CL CS CLK_ADV CLK PWM_BLOCK_0 XU5 SS_Done SHUTDOWN FB PWM CMP GM_AMP_0 XU4 CLK_ADV Slope_ramp CLK Oscillator_0 .ENDS *$ .SUBCKT IC_TEMP_0 Ta PD IC_TEMP PARAMS: TAMB={TAMB} *IS1 0 25 1 *ECS2 Ta 0 VALUE = {27-((1-V(25,0))/1M)} ECS2 Ta 0 VALUE = {TAMB} *R1 25 0 1 TC=1M ECS1 IC_TEMP 0 VALUE = {V(PD,0)*105+V(Ta,0)} .ENDS *$ .SUBCKT PD_0 I_GATE_AVG IQ I_GATE PD VIN R5 27 I_GATE_AVG 833M C4 I_GATE_AVG 0 100U IC=0 R4 28 27 833M C3 27 0 100U IC=0 EVCVS1 29 0 I_GATE 0 1 XU2 0 28 DIODE_SAN_0 R3 29 28 1 ECS3 PD 0 VALUE = {V(VIN,0)*(V(I_GATE_AVG,0)+V(IQ,0))} R2 30 31 100M C2 31 0 100U IC=0 R1 32 30 100M ECS2 I_GATE_RMS 0 VALUE = {SQRT(V(31,0))} C1 30 0 100U IC=0 ECS1 32 0 VALUE = {V(I_GATE,0)^2} .ENDS *$ .SUBCKT FB_OV_SNS_CL_0 SNS_CL SS_Done SENSE PWM_GATE UVLO OVP VIN PWM COMP + SHUTDOWN Ta V2 50 0 1.2 V3 56 0 7.5 V6 58 0 1.2 IS3 0 59 1M V5 64 0 3.2 IS1 0 62 1M V4 66 0 800M V1 68 0 500M VREF 69 0 2 XU20 VF4 45 46 AND2_SAN_0 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU19 UVLO 45 INV_SAN_0 + PARAMS: VDD=1 VSS=0 C4 46 OV_UVLO_HP 1U IC=0 R1 OV_UVLO_HP 0 1 ECS8 VIN_HP 0 VALUE = {IF(V(SS_Done,0)>0.5,V(X,0),0)} XU18 48 49 INV_SAN_0 + PARAMS: VDD=1 VSS=0 GVCCS1 0 CS_HIGH_Pre 49 0 4.901M XU1 50 SENSE 0 48 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 XU6 VIN_HP OV_UVLO_HP VIN_OV_UVLO_HPOR OR2_SAN_0 + PARAMS: VDD=1 VSS=0 C5 VIN 47 1U IC=0 R2 47 0 1 XU50 47 X MINIMUM_ON_TIME XU17 VF5 VF6 VF4 AND2_SAN_0 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU16 FBX_OVP_UVLO VF6 INV_SAN_0 + PARAMS: VDD=1 VSS=0 XU15 SS_Done VF5 INV_SAN_0 + PARAMS: VDD=1 VSS=0 ECS7 VINORPWM 0 VALUE = {IF(V(VIN_OV_UVLO_HPOR,0)>0,V(VIN_OV_UVLO_HPOR,0),0)} XU14 SD_Set VINORPWM SHUTDOWN SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 XU12 57 TSD PWMLOW SD_Set OR3_SAN_0 + PARAMS: VDD=1 VSS=0 ECS5 PWMLOW 0 VALUE = {IF(V(59,0)>0.5,1,0)} XU13 PWM 58 0 60 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 SW3 59 0 60 0 S_VSWITCH_1 C3 59 0 40U IC=0 ECS6 TSD 0 VALUE = {IF(V(Ta,0)>160,1,0)} XU11 61 CSHIGH COMP_HIGH 57 OR3_SAN_0 + PARAMS: VDD=1 VSS=0 XU10 FBX_OVP FBX_OVP_UVLO UVLO 61 OR3_SAN_0 + PARAMS: VDD=1 VSS=0 ECS4 63 0 VALUE = {IF(V(62,0)>0.5,1,0)} *XU9 63 VINORPWM COMP_HIGH SRLATCHRHP_SAN_0 XU9 63 Y1 COMP_HIGH SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 XU8 64 COMP 0 65 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 SW1 62 0 65 0 S_VSWITCH_2 C2 62 0 74U IC=0 XU7 56 VIN 66 UVLO COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 ECS3 OV_UVLO_THRD 0 VALUE = {150M+(V(SS_Done,0)*100M)} XU3 OVP_Comp VINORPWM FBX_OVP SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 XU2 OV_UVLO_THRD OVP 0 FBX_OVP_UVLO COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 ECS2 67 0 VALUE = {IF(V(CS_HIGH_Pre,0)>0.45,1,0)} XU5 67 VINORPWM CSHIGH SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 SW2 CS_HIGH_Pre 0 SHUTDOWN 0 S_VSWITCH_3 C1 CS_HIGH_Pre 0 100N IC=0 *ECS1 SNS_CL 0 VALUE = {IF(V(SENSE,0)>V(68,0),1,0)} ECS1 SNS_CL_PRE 0 VALUE = {IF(V(SENSE,0)>V(68,0),1,0)} RCS_F SNS_CL_PRE SNS_CL 141 CCS_F SNS_CL 0 1n XU4 OVP 69 0 OVP_Comp COMPHYS2_SAN_0 X53 VINORPWM Y1 MINIMUM_ON_TIME + PARAMS: VDD=1 VSS=0 .MODEL S_VSWITCH_1 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .MODEL S_VSWITCH_2 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .MODEL S_VSWITCH_3 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .ENDS *$ .SUBCKT MINIMUM_ON_TIME IN OUT PARAMS: VDD=1 VSS=0 MIN_ON_TIME=50n C_C1 0 N06463 1n IC=0 TC=0,0 C_C2 0 N06605 1n IC=0 TC=0,0 V_V3 N06765 0 {VDD} R_R2 0 N06605 {19*{MIN_ON_TIME}/(13.86n)} TC=0,0 E_ABM7 N06563 0 VALUE { {IF(V(N06463)>VTH,VSS,VDD)} } E_ABM9 OUT 0 VALUE { {if(V(IN)>{VTH} | V(N06605)>{VTH},{VDD},{VSS})} + } R_R1 IN N06463 {MIN_ON_TIME/(20n)} TC=0,0 E_ABM8 N06583 0 VALUE { {if(V(IN)>{VTH} & V(N06563)>{VTH},{VDD},{VSS})} + } X_S1 N06583 0 N06765 N06605 MOT_COPY_S1 .PARAM vth={(vdd+vss)/2} .ENDS MINIMUM_ON_TIME *$ .subckt MOT_COPY_S1 1 2 3 4 S_S1 3 4 1 2 _S1 RS_S1 1 2 1G .MODEL _S1 VSWITCH Roff=10G Ron=10m Voff=0.2 Von=0.8 .ends MOT_COPY_S1 *$ .SUBCKT DRIVER_0 I_GATE PWM VCC_INT GATE VCCVS1_in 100 GATE HCCVS1 I_GATE 0 VCCVS1_in 1 SW2 100 0 PWM 0 S_VSWITCH_1 SW1 VCC_INT 100 PWM 0 S_VSWITCH_2 .MODEL S_VSWITCH_1 VSWITCH (RON=9.09 ROFF=1G VON=200M VOFF=800M) .MODEL S_VSWITCH_2 VSWITCH (RON=18.18 ROFF=1G VON=800M VOFF=200M) .ENDS *$ .SUBCKT PWM_BLOCK_0 PWM_OUT COMP SLOPE_R SHUTDOWN SNS_CL SENSE CLK_ADV CLK XU6 102 CLK_ADV CLK_ADV_J1 AND2_SAN_1 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU4 SHUTDOWN 102 INV_SAN_0 + PARAMS: VDD=1 VSS=0 XU3 105 CLK CLK_SDNBAR AND2_SAN_1 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU2 SHUTDOWN 105 INV_SAN_0 + PARAMS: VDD=1 VSS=0 XU5 PWM_OUT SR_OUT_J1 CLK_ADV_J1 CLK_SDNBAR MIN_ON_OFF_TIME_0 XU1 SHUTDOWN 106 SNS_CL 107 OR3_SAN_0 *XU1 SHUTDOWN Y SNS_CL 107 OR3_SAN_0 + PARAMS: VDD=1 VSS=0 XU36 CLK_SDNBAR 107 SR_OUT_J1 SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 EComparator 106 0 VALUE = {IF(V(109,0)>V(108,0),1,0)} *XU51 106 Y MINIMUM_ON_TIME Ecomp_ramp 108 0 VALUE = {V(COMP,0)-V(SLOPE_R,0)} EVCVS1 109 0 SENSE 0 3 .ENDS *$ .SUBCKT MIN_ON_OFF_TIME_0 PWM SR_OUT CLK_ADV CLK XU4 116 TMINON PWM AND2_SAN_1 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU1 TMINON CLK_ADV 116 SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 XU3 TMIN SR_OUT TMINON OR2_SAN_0 + PARAMS: VDD=1 VSS=0 ECS1 118 0 VALUE = {IF(V(117,0)>0.5,1,0)} C1 117 0 869N IC=0 R1 117 TMIN 1 XU2 CLK 118 TMIN SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 .ENDS *$ .SUBCKT GM_AMP_0 SS_Done SHUTDOWN FB PWM COMP V3 136 0 0 V2 137 0 400M VHYS 138 0 1.2 VREF 139 0 2.5 V1 134 0 1 IS1 0 SS 22U V4 142 0 4.5 XU18 131 SS_Done DIODE_SAN_0 C6 SS_Done 0 1 ECS8 131 0 VALUE = {V(132,0)} SW1 CMP 0 SHUTDOWN 0 S_VSWITCH_1 GCS3 CMP 0 VALUE = {LIMIT(((V(FB,0)-V(VREF,0))*100U),60U,-30U)} C2 CMP 0 1F IC=0 R1 CMP 0 31.62MEG XU4 SS 134 DIODE_SAN_0 ECS2 135 0 VALUE = {LIMIT(V(SS,0),0.4,0)} XU1 SS 137 136 132 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 ECS1 VREF 0 VALUE = {V(135,0)*V(Dutycycle,0)} XU5 PWM 139 138 140 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 R5 141 Dutycycle 318 C4 Dutycycle 0 1U IC=0 R4 140 141 318 C3 141 0 1U IC=0 C1 SS 0 1U IC=0 SW3 SS 0 SHUTDOWN 0 S_VSWITCH_2 R2 CMP COMP 1 XU2 COMP 142 DIODE_SAN_0 .MODEL S_VSWITCH_1 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .MODEL S_VSWITCH_2 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .ENDS *$ .SUBCKT Oscillator_0 CLK_ADV Slope_ramp CLK V1 SLOPE_AMP 0 2 IS2 0 153 6M R3 148 CLK 1 *C4 148 0 28N IC=0 C4 148 0 72.15N IC=0 XU3 149 148 CLK SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 XU2 CLK_ADV 149 150 SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 R1 150 151 1 C3 151 0 601.24N IC=0 ECS12 149 0 VALUE = {IF(V(151,0)>0.5,1,0)} ECS3 152 0 VALUE = {IF(V(CLK,0)>0.5,1,0)} SW7 Slope_ramp 0 152 0 S_VSWITCH_1 GCS15 Slope_ramp 0 VALUE = {-120K*1U*V(SLOPE_AMP,0)} C7 Slope_ramp 0 1U IC=0 ECS2 154 0 VALUE = {IF(V(153,0)>0.5,1,0)} ECS1 156 0 VALUE = {IF(V(155,0)>0.5,1,0)} R2 155 CLK_ADV 1 *C2 155 0 28N IC=0 C2 155 0 72.2N IC=0 XU5 154 156 CLK_ADV SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 SW2 153 0 156 0 S_VSWITCH_2 C1 153 0 100N IC=0 XU53 0 153 DIODE_SAN_0 .MODEL S_VSWITCH_1 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .MODEL S_VSWITCH_2 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .ENDS *$ .SUBCKT DIODE_SAN_0 1 2 D1 1 2 IDEAL .MODEL IDEAL D N=1M IS=1E-15 TT=1F .ENDS DIODE_SAN_0 *$ .SUBCKT AND2_SAN_0 IN1 IN2 OUT PARAMS:VDD=1.8 VSS=0 VTH=0.9 E1 OUT1 0 VALUE={IF(V(IN1)>{VTH}&V(IN2)>{VTH},{VDD},0)} R1 OUT1 OUT 0.1 C1 OUT 0 1N IC=0 .ENDS AND2_SAN_0 *$ .SUBCKT INV_SAN_0 IN OUT PARAMS: VDD=1 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E1 OUT1 0 VALUE={IF(V(IN)>{VTH},{VSS},{VDD})} R1 OUT1 OUT 1 C1 OUT 0 1N IC=0 .ENDS INV_SAN_0 *$ * .SUBCKT COMPHYS2_SAN_0 INP INM HYS VOUT PARAMS: VDD=1.8 VSS=0 .PARAM VTH = {( {VDD} + {VSS})/2 } EHYS INM INM_INT VALUE = {IF (V(VOUT)>{VTH},V(HYS),0)} E1 VOUT_PRE 0 VALUE = {IF(V(INP)>V(INM_INT),{VDD},{VSS})} R1 VOUT_PRE VOUT 1 C1 VOUT 0 1N IC=0 .ENDS COMPHYS2_SAN_0 *$ .SUBCKT OR2_SAN_0 IN1 IN2 OUT PARAMS:VDD=1 VSS=0 .PARAM VTH = {( {VDD} + {VSS})/2} E1 OUT1 0 VALUE={IF(V(IN1)<{VTH}&V(IN2)<{VTH},{VSS},{VDD})} R5 OUT1 OUT 1 C5 OUT 0 1N IC=0 .ENDS OR2_SAN_0 *$ ****SRLATCHRHP_SAN**** .SUBCKT SRLATCHRHP_SAN_0 S R Q PARAMS: VDD=1 VSS=0 .PARAM VTH = 0.1 E1 QPRE 0 VALUE = {IF((V(S)VTH,VSS,IF(V(S)>VTH&V(R)VTH&V(R)>VTH,VSS,VSS))))} R1 QPRE OUT 1 C1 OUT 0 1N IC=0 E3 Q 0 VALUE = {IF (V(OUT)>VTH,VDD,0)} .ENDS SRLATCHRHP_SAN_0 *$ .SUBCKT OR3_SAN_0 IN1 IN2 IN3 OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH = {( {VDD} + {VSS})/2} E1 OUT1 0 VALUE={IF(V(IN1)<{VTH}&V(IN2)<{VTH}&V(IN3)<{VTH},{VSS},{VDD})} R1 OUT1 OUT 1 C1 OUT 0 1N IC=0 .ENDS OR3_SAN_0 *$ .SUBCKT AND2_SAN_1 IN1 IN2 OUT PARAMS:VDD=1.8 VSS=0 VTH=0.9 E1 OUT1 0 VALUE={IF(V(IN1)>{VTH}&V(IN2)>{VTH},{VDD},0)} R1 OUT1 OUT 1 C1 OUT 0 1N IC=0 .ENDS AND2_SAN_1 *$ ****SRLATCHRHP_SAN**** .SUBCKT SRLATCHRHP_SAN_1 S R Q PARAMS: VDD=1 VSS=0 .PARAM VTH = 0.5 E1 QPRE 0 VALUE = {IF((V(S)VTH,VSS,IF(V(S)>VTH&V(R)VTH&V(R)>VTH,VSS,VSS))))} R1 QPRE OUT 1 C1 OUT 0 1N IC=0 E3 Q 0 VALUE = {IF (V(OUT)>VTH,VDD,0)} .ENDS SRLATCHRHP_SAN_1 .END *$ * SCMP13WBC8W1 LED model * Model Generated by ROHM * All Rights Reserved * Commercial Use or * Resale Restricted * Date: 2011/06/20 .subckt LED A C D1 A C SCMP13WBC8W1 .MODEL SCMP13WBC8W1 D + IS=10.000E-21 + N=2.3976 + RS=.1837 + IKF=8.4401 + CJO=1.0000E-12 + M=.3333 + VJ=.75 + BV=100 + IBV=100.00E-6 + TT=5.0000E-9 *+ ISR=100.00E-12 .ENDS LED *$ .SUBCKT DMT10H010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003569 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.092E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 53.29 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.273E-010 N = 1.184 RS = 0.0002213 BV = 103 CJO = 2E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *$ .SUBCKT SDT 1 2 D1 1 2 ideal .model ideal D IS=350.02E-9 +N=1.0363 +RS=18.307E-3 +IKF=3.7362 +CJO=1.1962E-9 +M=.60651 +VJ=1.1416 *+ISR=99.900E-3 +NR=.5005 +XTI=-14 +BV=100 +IBV=100.00E-6 +TT=5.0000E-9 .ENDS SDT *$ * *DIODES_INC_SPICE_MODEL_AL5801 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=11/06/2012 *VERSION=2 .SUBCKT AL5801 BIAS FB OUT REXT COMP GND M1 1 2 3 3 Nmod1 RD OUT 1 Rmod1 450E-3 RS 23 3 Rmod1 27E-3 RG BIAS 22 1.5 RIN BIAS 23 2E11 RDS OUT 23 6E9 CGS 2 3 380E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 426E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS REXT 23 2n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=1 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=102 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) Q1 BIAS FB GND SWT Rbg FB GND 47000 Rbnc FB COMP 4700 .MODEL SWT NPN(IS=20E-14 NF=.99 BF=320 IKF=0.3 VAF=80 ISE=5E-14 NE=1.4 NR=1 BR=10 + IKR=0.06 VAR=10 ISC=2E-13 NC=1.3 RC=0.194 RB=0.5 RE=0.245 CJC=6.05E-12 MJC=0.175 VJC=0.4 + CJE=13E-12 MJE=0.36 VJE=0.7 TF=0.4E-9 TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=25 GAMMA=5E-8) .ENDS .SIMULATOR DEFAULT * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=5OCT2011 *VERSION=1 *PINS ORDER OUT BIAS EN GND FB Rext .SUBCKT AL5802 1 2 3 4 5 6 Q1 1 3 6 T2 Q2 3 5 4 T1 R1 2 3 10K TC1=-4E-3 .MODEL T2 NPN IS=2.6E-14 NF=1 BF=300 ISE=4.5E-15 NE=1.5 + BR=5 ISC=2E-14 NC=1.3 NR=1 CJC=5.6E-12 MJC=0.24 VJC=0.4 + CJE=13.49E-12 MJE=0.37 VJE=0.75 .MODEL T1 NPN IS=1E-14 NF=1 BF=150 ISE=8E-15 NE=1.5 + BR=1.5 ISC=1.2E-13 NC=1.5 NR=1 CJC=5.279E-12 MJC=0.28 VJC=0.5 + CJE=8.92E-12 MJE=0.36 VJE=0.73 .ENDS .SIMULATOR DEFAULT * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- AL5809 Spice Model ---------- **$ENCRYPTED_LIB **$INTERFACE .SUBCKT BEHAV_BUF1 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c128bd00d1abc42af99c6c0baf08e10c6b59daead8d7247c6d06b1c2ad6b4c5d4d5b448b2bd9e53b69175cb88774d3db5e4 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d8b7a51a9aabbc89b6653e48f7b7a37a47a6957f2995f5feb521eafe402ff144a c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16045b83ec8622d5427f126521cea68675c3c3b7fad7e19e10d67b6c78664a3d68b9 1d3b21f0c5cfb1ec3c523f2ab24bba460acb93a81681180d347aaf6d71f109ab0ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF1 .SUBCKT BEHAV_BUF2 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c128bd00d1abc42af99c6c0baf08e10c6b59daead8d7247c6d06b1c2ad6b4c5d4d5b448b2bd9e53b69175cb88774d3db5e4 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399dcc17e7b3faed6985e20e07e48a0018457a6957f2995f5feb521eafe402ff144a c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16045b83ec8622d5427f126521cea68675c3c3b7fad7e19e10d67b6c78664a3d68b9 1d3b21f0c5cfb1ec3c523f2ab24bba460acb93a81681180d347aaf6d71f109ab0ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF2 .SUBCKT BEHAV_AND2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 7f4d8d07b48671743da119f00e2978a3fc6b74ccb3c944ab337ed0baf91e23f0bab5aa602dd219eae4dde683b0c17fbd44a83a9c61465e2f448c09e37b7cae88 e111c2a7aec3e4088342a6a17f7d3ef1e6a78a282a645a92eb8f3d822c7a9efdefef431e6a9c0e3577e546cf609df57cd699a5a50cdae0e8cd291ba8e6759118 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16045b83ec8622d5427f126521cea68675c3c3b7fad7e19e10d67b6c78664a3d68b9 1d3b21f0c5cfb1ec3c523f2ab24bba460acb93a81681180d347aaf6d71f109ab0ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 $CDNENCFINISH_ADV2 .ENDS BEHAV_AND2 .SUBCKT BEHAV_NOR2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cd2ee294236473d04ab80823c30c2eba475189bbe04437c3e128683207208874c 4450fddf121883dcd64f79297fed85276b76891fe00c8c90acff9ac9ca34cfb7c2a9c2908ad913ebefb7913ce42d7a1f8b2c83cf7ad60a9653c01f2c87a621db e111c2a7aec3e4088342a6a17f7d3ef107c732bae18662950d6dc717e77f6112cc17e7b3faed6985e20e07e48a0018457a6957f2995f5feb521eafe402ff144a c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16045b83ec8622d5427f126521cea68675c3c3b7fad7e19e10d67b6c78664a3d68b9 1d3b21f0c5cfb1ec3c523f2ab24bba460acb93a81681180d347aaf6d71f109ab0ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 $CDNENCFINISH_ADV2 .ENDS BEHAV_NOR2 .SUBCKT BEHAV_BGAP_noLoad1 VDD VSS VBG $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f40fe187d009505702b652e240866df4e3 e111c2a7aec3e4088342a6a17f7d3ef1aca0faac4e1721b778cefc5ae6aa97ac75964f8a5ad6cd54eec85a6fb822075fd4b967bc7ed50feead8a20b41a9b9c5c d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae49176d17c94429790ce121e21931f0c17 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca18305be67b1925cc499d0ade1df59a0d73b237aae996d5f655a8a838c36d9bf8 1d3b21f0c5cfb1ec3c523f2ab24bba46c0810394d3865b9aa5828cd6fd585d1a84f3f3bc5698179459d4ef305f3bc4d7dd37c4d937a5552eb468e30704cedd9f b89379b79a2c1275564dd90b7ec20cd99f73fa9515de4d394a2f5465d3d8884c6f1b352a55e02fd62556c5b0b040ead3af812677278f90e20869ae296fd060d3 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad1 .SUBCKT BEHAV_BGAP_noLoad2 VDD VSS VBG $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f40fe187d009505702b652e240866df4e3 e111c2a7aec3e4088342a6a17f7d3ef1e24309e7da15e27f1e3f72ae456a0fc526a1a086cf60fb2be63395849cd362acd4b967bc7ed50feead8a20b41a9b9c5c d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae49176d17c94429790ce121e21931f0c17 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca18305be67b1925cc499d0ade1df59a0d73b237aae996d5f655a8a838c36d9bf8 1d3b21f0c5cfb1ec3c523f2ab24bba46ac30ede729ec2739cb9aac92a84940783a93452ef821ac1c875af808fe2d7403b4fc952ba23825a9df86a4f991c57257 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad2 .SUBCKT BEHAV_VTHR1 VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dda7179a2106b30c9e5daa51001a3ee69fd57ee23295e7e52ccdf1a38a6a14ca97606b888de2392d61c12ab26e504f1637 e68feee095d5ebbf714759ae7b074c256a6a2c1d328ccb9d6cf35670b0771694c2a9c2908ad913ebefb7913ce42d7a1f8b2c83cf7ad60a9653c01f2c87a621db e111c2a7aec3e4088342a6a17f7d3ef1dcdb46c968c52a57eefb8a648f3c3f4c8485563cb54103edf1afb7fdec56a5daeb0e644ab1fadf4b5907a8172c6c12f3 a9631ce75f4e1bb98ce846f764226a16b390e9e4956466817f909bc05e58fbe22b34abc446c720d4b2fd137cf3cb9f32d4b967bc7ed50feead8a20b41a9b9c5c 4d627ea43e2de4a00c35ce2549c2ddaad3e3b72d1d59b04aa8126a231385f5fa7d4ab58bb314e5bac561e83c728f95b3da91ef2b545ea4e438372b02a967130f $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR1 .SUBCKT BEHAV_VTHR2 VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dda7179a2106b30c9e5daa51001a3ee69fd57ee23295e7e52ccdf1a38a6a14ca97606b888de2392d61c12ab26e504f1637 e68feee095d5ebbf714759ae7b074c256a6a2c1d328ccb9d6cf35670b0771694c2a9c2908ad913ebefb7913ce42d7a1f8b2c83cf7ad60a9653c01f2c87a621db e111c2a7aec3e4088342a6a17f7d3ef1dcdb46c968c52a57eefb8a648f3c3f4ce083a25b7d7c37659a49bc56c868f6f9eb0e644ab1fadf4b5907a8172c6c12f3 a9631ce75f4e1bb98ce846f764226a16b390e9e4956466817f909bc05e58fbe281c58bf400d016e5d4da197c297d688b8b2c83cf7ad60a9653c01f2c87a621db 1231fd06dc1b5565fb42441ffc1a36e2ba7b74c401d657063f00fe6073685b3a007a582b4e5abc210ead21cb55f751e38fcf4f712e6bee3005a825cd1aba1f5b $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR2 .SUBCKT BEHAV_VTHR_HYST VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439dce009f20295628adae7770bc631b78e 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cd5e15d6eb28f9167f97118c5bf0ebeb68 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebf0967df26483952a614a3366037b81fe8 d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a37a4d5e9155f3abb55634f3f378ed739ae de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e4db31f1420616ed480a0c801694a3ccf09f73fa9515de4d394a2f5465d3d8884ccb87aef16363c5989645d59a8030e079 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf097104478a4b4314c837539d7f0f7449007614f 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1faef97d9b31c31579480c6caedd83eb3c7b00e77c9fe8ac81ca07730eb3454bb444afa625f492088c397ad6c23c3ddfd ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415a192a9da3df58df9d4892829a7717a37b27bdba34ebfacad77f251bf7f74c9ed5 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4ce083a25b7d7c37659a49bc56c868f6f9eb0e644ab1fadf4b5907a8172c6c12f3 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe22b34abc446c720d4b2fd137cf3cb9f32d4b967bc7ed50feead8a20b41a9b9c5c 8a148c7e2c90cc798fe030e76f591a6914b6f8a1950998ba3c31a8b3d2479bc21f164736c3623453b7ce8bf7738d7f72ecf86756faddff6ed5879247ccddeb95 8d43faff464f5d4c60a76fa1367ad7d6df9d2f31af8a2c91f43148a81920f33f87b585fc469989ae261da1294a48a3623226d06326ee2770e14d37c2c2f4a0f1 $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST .SUBCKT BEHAV_ISNKMIR_DEN IIN IOUT DEN VDD VSS $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c4182a149020192ace7c6ae11d77945d16fc056c50ac2277e27937f53b4fc0dea 14f0b8b79711a5715630b5b6797ceed98b4d539fa8e4667ab20a2e5bb3c214d7b3bdbeca9c0ab6979e436cc42705f33d021b95af8de4bb136f4b860b39f9b213 e111c2a7aec3e4088342a6a17f7d3ef16113c426a90ca46c293260f00bd15a051b69edc160a2112ec56fd565e22b1794201740b2f18a5fc45d7548e0a98e6a87 7c80f5d104695480a54673870b66e4b582598977ee49bff53f027168e1dde597a2a272db103b823c77ab3b9512a15d8c3455000bff2006d5529cfa0cb6e34d25 b5981fb29a729f4da3da3b71fb0626d154846f77f9dd531ffea89c9a616b993bfce30ee58c462aaf676ca35056d5a79d633431f1767dd58ca6c90a183fa5c189 5fb07a9d3223fde6bc16ebe9d192d9455b83ec8622d5427f126521cea68675c3e4490fa2e532dac1f4986ddb8eb2ed8e93ae776f91c4b7308e9b876ffcd6bf45 a3d7f47bcfabcf4a28a001861ba8d4ecfc9bbc3130156353ffbc384ab9907f038805752b128d47ac1f21daf2076a736ad7eb4fa8b7ffe892e9d2430a5c676f6c 74912b7f4195d14846f9581282aa60c165c413e34fd58a46fccd9c567727e3d3e604b700df65b7b5250db98f9865b07e129b449f15b087a6c90a34b655c1fa51 8d0a0c55ba39eb000d313b782cba47e7e604b700df65b7b5250db98f9865b07e637b262c824d22e7903114ba8bf7f5c838e976e022cffae45555bdce0a3614b5 27f8915165e8228fb78d4770f85804668b4d539fa8e4667ab20a2e5bb3c214d7b3bdbeca9c0ab6979e436cc42705f33d021b95af8de4bb136f4b860b39f9b213 1d3b21f0c5cfb1ec3c523f2ab24bba46d4eb2937f5ef4b45cfe25b2fe5edf0d265be98c861bbfca09e16a646d00db8cfea6100cef85092c448cf2e48007ad0af ec632f12e03fdd68777c4aea46c3aa0aef08125deda75dbb678d79feedda4aa14bd53ed3e2b3e3fdd2ac0f807e6cb126323b2d263f2e87a034f75ee71394cf3f $CDNENCFINISH_ADV2 .ENDS BEHAV_ISNKMIR_DEN .SUBCKT BEHAV_TEMP_GEN VDD VSS ILED IOUT TEMP PARAMS:arTheta_j=83.33 arAmbientTemp=25 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 2fe021ee4920ebc0b15ff7bc901583a1e604b700df65b7b5250db98f9865b07e637b262c824d22e7903114ba8bf7f5c838e976e022cffae45555bdce0a3614b5 de85ae46ede00b597a872e887fea47dc6758c03f081e37ed86f20e8f33b2862bc0621baafa62836f2cb479f94920061158e37c0be439bcc615eb11eff02b10ba 20e3127dc65b7b7088269d46b21b6d3d10f4c76ac8e4af4c3dcfebb1d19028bf2b7a824bf744374a32d3fdc2dd0fe2e724b56f61262fcaf0631fd17e89f76b34 c27d03acf02f663db9ba018ec7a6c63908bca835f546932742dafd516544d61f1732065b80b68024a1bba46fc2caacfac93a5252cd67fb4d7d9f8782895f6c72 163c6c82d00fe2c1e829286bb831e6b6e604b700df65b7b5250db98f9865b07e637b262c824d22e7903114ba8bf7f5c838e976e022cffae45555bdce0a3614b5 0fdfc09ce687efe1350bfb1632a911a60e44992a80aa92fb6ac54c08fc9338194c5e6894b9dab0a4d1af6ca7d9cf428800c898308f903662f9ec5d62f66a3e31 $CDNENCFINISH_ADV2 .ENDS BEHAV_TEMP_GEN .SUBCKT AL5809_wRset_TOP IN OUT PARAMS:Tja=83.33 Ta=25 Rset=8.33k $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 ee73142945e03629e4757717091f40bb7409f39999103e57f35e6d44c80e6d255b83ec8622d5427f126521cea68675c3c3b7fad7e19e10d67b6c78664a3d68b9 10d1c52332d0ec83fa1d80a46f6adb20c7d9ffeed13a4161a97bda243e5e5f1d8e4860b1154c6bab75b582acb2c3d3638b2c83cf7ad60a9653c01f2c87a621db 988b0f37f8a9d7ffa15af53f5ff6f0d6e75dfd8b014388204d7639daeae0f8e43c02b842c610bff436cfc897b994284e27bdba34ebfacad77f251bf7f74c9ed5 8723f388bc5eff09b0265cde91acfa8d46b2b6a9fc1bcd9d06cc6a50809e2119ae176e9cb1e9ea4eb80958147bf253838b2c83cf7ad60a9653c01f2c87a621db 5347e549048f06a79f140d8384eb5ee599ac4f4591d3fcf2f6770f347105a99d4ca67014b88b699046c4bf0b0f39b7e99176d17c94429790ce121e21931f0c17 0cd8a2f70861739753a4b1e642eff2862aa435e7015ffc5e0b612f229eea16ceda3226467d0ecd5f04ba8b4d6741603f7a6957f2995f5feb521eafe402ff144a e745b5612c80969bd6b34497705d33b0e28734b2738848d58a91ebe3c37ce26f1e8b55eb5af1440b33401bc5e9a956e7d4b967bc7ed50feead8a20b41a9b9c5c 21af6aee88138408b85099b3a5b9c6ff4543c84926d183679e47a4a6928d1f0909fdf0dc1178d89f132faf329634413b7a6957f2995f5feb521eafe402ff144a b821ea4bf3b9a95d3c737c73ad4e8c826bbad7627f4c070e2f0691be98a02bfd223a718ddea6e8b326f6237d896aeb748b60675c2500d32f59a94270955589a5 93cc62cfcd0a487e5f13a3c993a30d9b01e9996c724f31e78603b75224505f719959714a7590b209a74e7b484cd9a5b7ae9ba0c2426fe7c07a37b33957a5affb 6d66535b717a58059aeeb8e949455b83d46f9b2f3570cb99ea770254f2cb856a9f73fa9515de4d394a2f5465d3d8884ccb87aef16363c5989645d59a8030e079 41e3cb70d4da0f13f36ab2f8188b846aeea073a7e90b67a1e2d06dc068f9a8cf1e80e4569cb602c38edbbcc77c74f1bceb0e644ab1fadf4b5907a8172c6c12f3 38ec2ad083e19118f2e69d4839195f8ee604b700df65b7b5250db98f9865b07e637b262c824d22e7903114ba8bf7f5c838e976e022cffae45555bdce0a3614b5 2a255b310699514b1d32908098485ad10f4d9d330a55578769523acc9021f39e9f73fa9515de4d394a2f5465d3d8884ccb87aef16363c5989645d59a8030e079 1fb3655c50047094ec061b2b1408549c6db797772947b5a3e53e510b1e787fc38bb9a27c43a9ae49a9cd0811b1c32d0775ab8389f49ea1adbcb1069a2e2d3897 e3b9164d88ac4c04b988c2dae19efded223a718ddea6e8b326f6237d896aeb743e03d291cbdce458593e6339b96dfb1b58ed2a8a6a278c65214b527adaa78500 ba43b3c3d7314a974ebfbcd3a89841da0916845492533b97b39b7062a60608c58bb9a27c43a9ae49a9cd0811b1c32d0775ab8389f49ea1adbcb1069a2e2d3897 $CDNENCFINISH_ADV2 .ENDS AL5809_wRset_TOP .model Dsimple d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 8ac03806a6d6f724c8473bdd52339dcee604b700df65b7b5250db98f9865b07e637b262c824d22e7903114ba8bf7f5c838e976e022cffae45555bdce0a3614b5 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .model D74 d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 75460640a3186b4ff39d254f7527cdf7b56870c0eb97140a206e3084eaafcdfb8bd00d1abc42af99c6c0baf08e10c6b5b0ac3d0ce75e184cc15fd06417f47911 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .model D74CLMP d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 646799414338b0c9354194d5b70aa7a65366a721f44ded1e170fc222f7c359d0fce30ee58c462aaf676ca35056d5a79d633431f1767dd58ca6c90a183fa5c189 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .model Q74 npn $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 24ffa71e874d149a10b2c92ba5c8716d8252e8f1f845f53931de50412f1d5e8fd8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 746924b950a2bc290a4e53b0267d84b8223a718ddea6e8b326f6237d896aeb743e03d291cbdce458593e6339b96dfb1b58ed2a8a6a278c65214b527adaa78500 cfe965f35139ba298051e2d8f8f3da6cbbf72328469a62412bab9d74877ba54d0ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 0eef750c1b08bc7410ebe4be9da9754f74a12033b5a4d00c8a75d84acbbfba5a0ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 e775ad024035b735dcbc5ed1857829e806aed89fabd1804a44555532e8565f414c5e6894b9dab0a4d1af6ca7d9cf428800c898308f903662f9ec5d62f66a3e31 811290e6cbf6784ed54a134aac29accfd49d8b3d0a69e64373e2fe21f1bb00700ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 b2ba60de915f7a79394f2e6b45f68e6e92b4521b5396f1360e040972ae8439f44c5e6894b9dab0a4d1af6ca7d9cf428800c898308f903662f9ec5d62f66a3e31 efe68e5febac8dabb5bfd782b5d9d7b85b83ec8622d5427f126521cea68675c3e4490fa2e532dac1f4986ddb8eb2ed8e93ae776f91c4b7308e9b876ffcd6bf45 df956013e1bea38b84829c6a62a9c3fcfce30ee58c462aaf676ca35056d5a79dc2ece8cc39839dfb95695e2cda285fd375fc8dcae74a2fbf550f2238e14f33e1 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .MODEL T_BUF1 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 2dee174549d38e5d2f6fcaee25959bd29f73fa9515de4d394a2f5465d3d8884c6f1b352a55e02fd62556c5b0b040ead3af812677278f90e20869ae296fd060d3 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef521509af59587dbcdcc50d1bd5a209969ea8827bdba34ebfacad77f251bf7f74c9ed5 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c2111cdd2b454b5248c4fab57725abd48095144a83a9c61465e2f448c09e37b7cae88 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_BUF2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 2dee174549d38e5d2f6fcaee25959bd29f73fa9515de4d394a2f5465d3d8884c6f1b352a55e02fd62556c5b0b040ead3af812677278f90e20869ae296fd060d3 b3147db677ffd3d77c1cbb47ca0180160d499188e60cc083f16388da90f5b9183a6f8f99b7603478f81c604fca26178b152878a863b2bc25cbc0dd22b62d8b7b b303173c442c0abc0bf419c5333c81db1361072b43854c7f61238d19ac7b04ad3a6f8f99b7603478f81c604fca26178b152878a863b2bc25cbc0dd22b62d8b7b 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_BUF3 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 2dee174549d38e5d2f6fcaee25959bd29f73fa9515de4d394a2f5465d3d8884c6f1b352a55e02fd62556c5b0b040ead3af812677278f90e20869ae296fd060d3 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3ff06d20cece6722ea21d1c250c8e3b10152878a863b2bc25cbc0dd22b62d8b7b e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027ff06d20cece6722ea21d1c250c8e3b10152878a863b2bc25cbc0dd22b62d8b7b 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_AND2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 2dee174549d38e5d2f6fcaee25959bd29f73fa9515de4d394a2f5465d3d8884c6f1b352a55e02fd62556c5b0b040ead3af812677278f90e20869ae296fd060d3 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef521509af59587dbcdcc50d1bd5a209969ea8827bdba34ebfacad77f251bf7f74c9ed5 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c21119af59587dbcdcc50d1bd5a209969ea8827bdba34ebfacad77f251bf7f74c9ed5 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_NOR2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef521509af59587dbcdcc50d1bd5a209969ea8827bdba34ebfacad77f251bf7f74c9ed5 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c21119af59587dbcdcc50d1bd5a209969ea8827bdba34ebfacad77f251bf7f74c9ed5 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_BG1 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 546b494876f723733e7595f90a626227b97904e668d245994c0e63a32f16fa110da26ffa515ef09a79954072f01b7ed7152878a863b2bc25cbc0dd22b62d8b7b 00621eff850e9770151fc02b7c22e123cde7cf2301523074990284af9626caa20da26ffa515ef09a79954072f01b7ed7152878a863b2bc25cbc0dd22b62d8b7b 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_BG2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3ff06d20cece6722ea21d1c250c8e3b10152878a863b2bc25cbc0dd22b62d8b7b e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027ff06d20cece6722ea21d1c250c8e3b10152878a863b2bc25cbc0dd22b62d8b7b 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_VTHR1 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 ad86f4a8ed1ad8dfb4e88c074e0af07cefaab6212f81d326796e84cee57d636b2783e8e3b60e9202582dc0f889691fb3152878a863b2bc25cbc0dd22b62d8b7b 59f7b61b911e20812ab404303781a3af8de0041daffff67994bc2787bfb8f64e2783e8e3b60e9202582dc0f889691fb3152878a863b2bc25cbc0dd22b62d8b7b 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_VTHR2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3ff06d20cece6722ea21d1c250c8e3b10152878a863b2bc25cbc0dd22b62d8b7b e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027ff06d20cece6722ea21d1c250c8e3b10152878a863b2bc25cbc0dd22b62d8b7b 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_ISNKMIR UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 4a0bc5fdba9f65b841c32da58b20cbe66a507b4839199c775889817a20825d16347315a2fbc26ba524d5c69d6ed7fbb527bdba34ebfacad77f251bf7f74c9ed5 1aa05dfabd8cc1863c46f52d29dd985b98e19709b0f06018e259ad803e50ac88347315a2fbc26ba524d5c69d6ed7fbb527bdba34ebfacad77f251bf7f74c9ed5 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_SRFF UGFF $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 65d36f6542c7047860f7993459a746aa6a7e0b9139dbee8b5eef1fc0ac7176be3e0006766e4e47e5487d798ce9ce37dd7a6957f2995f5feb521eafe402ff144a a4d398c7d8b82997fc8228d98eaa2bbb1fda409fdfcc8182cefbdf39b9213e44771f0a8a4f2e480ca9ce23b3a583ad4f7a6957f2995f5feb521eafe402ff144a 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .MODEL T_OR2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef521509af59587dbcdcc50d1bd5a209969ea8827bdba34ebfacad77f251bf7f74c9ed5 a267d912a37058ece7fe250b0376f814c33d2787aa0ebe00e78f03a9355fdbd4fb9e16851b030ffe83c918d237839cdb152878a863b2bc25cbc0dd22b62d8b7b 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .subckt DIGIFPWR AGND + optional: DPWR=$G_DPWR DGND=$G_DGND + params: VOLTAGE=1.0v REFERENCE=0v * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 70377785674f05234daf157ce38e73dacc908f23d1304d55d0451a4ac0fc9e7ae604b700df65b7b5250db98f9865b07e129b449f15b087a6c90a34b655c1fa51 1c1ddb44ec313d3673f794b7e42d77d486fd0677a49da059111dcc43df1c2e8ed8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c b2c4b22bf92115676670c11196a31e916f01d0dcf60bf6ce91e1f8f148192a6e10f4c76ac8e4af4c3dcfebb1d19028bfc6ffd903ed495ab4fec30ef731dfae39 e24b75f0e895f2a6c316162f14db3ffd86fd0677a49da059111dcc43df1c2e8ed8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c $CDNENCFINISH_ADV2 .ends .model IO_BUF UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 03300390c8e0e4e1a63fb6c35abd08fce5724b41a7e5c9790ebec764d8a6ffb5d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 7c16d8fdefe8a20216c2c03f6156410c46bc783afa2acfd42a1523ef0d74d6880ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 e1024ee0a3ac2ec611a17e8c109c0918f3c133140f51580fdb51869b11f5798c6758c03f081e37ed86f20e8f33b2862be6898e9b350f4922ceff4caeda2f363b 3a6ca6e84b627c061842952a30c31f6fbc60059b807683752bc2a957a7f13777d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .model IO_AND2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 03300390c8e0e4e1a63fb6c35abd08fce5724b41a7e5c9790ebec764d8a6ffb5d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 70ce328e1544baa368191b1b5d90d31b60803b6ab75d0c0be59d692771602bc04c5e6894b9dab0a4d1af6ca7d9cf428800c898308f903662f9ec5d62f66a3e31 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c308b4d539fa8e4667ab20a2e5bb3c214d7507145f8fda65d908896b58262b48ece 3a6ca6e84b627c061842952a30c31f6fbc60059b807683752bc2a957a7f13777d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .model IO_BG1 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 03300390c8e0e4e1a63fb6c35abd08fce5724b41a7e5c9790ebec764d8a6ffb5d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 7c16d8fdefe8a20216c2c03f6156410c81110e6cf54fdf14602919e26a99a3820ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c308b4d539fa8e4667ab20a2e5bb3c214d7507145f8fda65d908896b58262b48ece 3a6ca6e84b627c061842952a30c31f6fbc60059b807683752bc2a957a7f13777d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .model IO_BG2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 03300390c8e0e4e1a63fb6c35abd08fce5724b41a7e5c9790ebec764d8a6ffb5d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 7c16d8fdefe8a20216c2c03f6156410c0b1a00ee3a6b1d52d676b30b37c4bc230ae1755f88c44aa8db87b41d5367806ddff63df8e23010ee6bbe1386dadb4a96 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c308b4d539fa8e4667ab20a2e5bb3c214d7507145f8fda65d908896b58262b48ece 3a6ca6e84b627c061842952a30c31f6fbc60059b807683752bc2a957a7f13777d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .model IO_VTHR UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 03300390c8e0e4e1a63fb6c35abd08fce5724b41a7e5c9790ebec764d8a6ffb5d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 17d6ead946fc736a47552e5b2ad082651dda6a1d79d84c936679ae6492678a9f4c5e6894b9dab0a4d1af6ca7d9cf428800c898308f903662f9ec5d62f66a3e31 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c308b4d539fa8e4667ab20a2e5bb3c214d7507145f8fda65d908896b58262b48ece 3a6ca6e84b627c061842952a30c31f6fbc60059b807683752bc2a957a7f13777d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .model IO_ISNKMIR UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 03300390c8e0e4e1a63fb6c35abd08fce5724b41a7e5c9790ebec764d8a6ffb5d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 2fc8261cdc2e6c5c7af70d72bf057dfc69daf13d682513e8aca7c06a96768660df9d2f31af8a2c91f43148a81920f33f7a584a3993c74925e5d6d03addb3d848 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c308b4d539fa8e4667ab20a2e5bb3c214d7507145f8fda65d908896b58262b48ece 3a6ca6e84b627c061842952a30c31f6fbc60059b807683752bc2a957a7f13777d8118935d07d05de3c074195b0b6b58e1bf3997619504b183d578cf5fed6565c 94a8e9e460410d0c95edd8ecdb26f03d0ae1755f88c44aa8db87b41d5367806dda883601b2dff82f9e67e0e4302dc06e2b3b4a55d661abe0a0b1d9e03b46000e $CDNENCFINISH_ADV2 .subckt AtoD_AL5809 A D DPWR DGND + params: CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 81798e61699ab02189083ab13e6d23497dfcd52a4b4d84cdf20f7579edcf38e29b3cc53096db5ba92c7c7208b7ed250e152878a863b2bc25cbc0dd22b62d8b7b 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cfaef97d9b31c31579480c6caedd83eb31d6d501bd2cdefd370b75b7b35ed9119 744bbcba15dc700be6ef0aea79492e69bd674b9c1a3dc040dac5e8cbe26e92fb8bb9a27c43a9ae49a9cd0811b1c32d0775ab8389f49ea1adbcb1069a2e2d3897 290012be5be89f16e1cdc618f9274a608b4d539fa8e4667ab20a2e5bb3c214d7b3bdbeca9c0ab6979e436cc42705f33d021b95af8de4bb136f4b860b39f9b213 600d7edb1bc767bf1538bc0ef4533bd0e6472dbfc53ad8ad992dd7755e75d219fce30ee58c462aaf676ca35056d5a79d633431f1767dd58ca6c90a183fa5c189 e3e3a17636109a425fe6c7a27dc624896758c03f081e37ed86f20e8f33b2862bc0621baafa62836f2cb479f94920061158e37c0be439bcc615eb11eff02b10ba e7091e75bc6e40b78ccf6d22120b989bc8765dfff1f98d608e42342bfa4b205ba52f24cbf6f7ec7605ad9a0b67518273d8c0debf48521a0b38436dedcaafdcc0 89163811eab225caf6f4c8539e7423c19f73fa9515de4d394a2f5465d3d8884c6f1b352a55e02fd62556c5b0b040ead3af812677278f90e20869ae296fd060d3 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BUF D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e108bd2ce1b36e530c38209210a485ba29800e1dd9ce1a012586950e546894807a6957f2995f5feb521eafe402ff144a 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cfaef97d9b31c31579480c6caedd83eb31d6d501bd2cdefd370b75b7b35ed9119 $CDNENCFINISH_ADV2 .ends .subckt DtoA_AND2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e1783020f9a0485f2656917dda112d07d06d45ccae46cbfe583ac37a97b3fc22eb0e644ab1fadf4b5907a8172c6c12f3 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cfaef97d9b31c31579480c6caedd83eb31d6d501bd2cdefd370b75b7b35ed9119 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG1 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58c9210d1e2cf931321f16a206999813e47e465c425ed284589bca6b11668dca937a6957f2995f5feb521eafe402ff144a 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cfaef97d9b31c31579480c6caedd83eb31d6d501bd2cdefd370b75b7b35ed9119 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58b7267e464f45a71e479aa92874c190937ecd1ceba7d32ab03aa43146862e63aa7a6957f2995f5feb521eafe402ff144a 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cfaef97d9b31c31579480c6caedd83eb31d6d501bd2cdefd370b75b7b35ed9119 $CDNENCFINISH_ADV2 .ends .subckt DtoA_VTHR D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5810523ce55cb93b436be2b2d8663ffba4ae78126153a75e5820d8d40750379f20eb0e644ab1fadf4b5907a8172c6c12f3 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cfaef97d9b31c31579480c6caedd83eb31d6d501bd2cdefd370b75b7b35ed9119 $CDNENCFINISH_ADV2 .ends .subckt DtoA_ISNKMIR D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58cfd6574546c1c3784f35548467e9692a20dbcf311bf8f1e671281901321b14289176d17c94429790ce121e21931f0c17 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cfaef97d9b31c31579480c6caedd83eb31d6d501bd2cdefd370b75b7b35ed9119 $CDNENCFINISH_ADV2 .ends .model DO_AL5809 doutput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 234f0b207005e7ab13fdbfd8b1877ccfba357d479232a29d3d79e344cb27a5382f68e13f278cf013a1b13d0e2eb6849227bdba34ebfacad77f251bf7f74c9ed5 165f20c6fa9cb4dba9b14dfa1689dc99c3df6386a3339466ba48aaf291b85de3223a718ddea6e8b326f6237d896aeb748b60675c2500d32f59a94270955589a5 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .model DIN_BUF dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440b177fe4b7179c762002e85f661034addbeb0e644ab1fadf4b5907a8172c6c12f3 165f20c6fa9cb4dba9b14dfa1689dc99ebeab298200f84d4c013ad1974f2850fb8f469032d687c4f08d061cdb2d7387feb0e644ab1fadf4b5907a8172c6c12f3 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e711cde911f56dd1e7f45eb8c56887dfe323b2d263f2e87a034f75ee71394cf3f 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .model DIN_AND2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc991d394077114d9a626053528d457b833d3a8a3ced46310555395fb71d02bef5bb077118ed39d46ef67ee8796d8f63b5e8 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .model DIN_BG1 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 234f0b207005e7ab13fdbfd8b1877ccf115f1facf7a32f19886368172b1906f9b04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99f4539598ecbacd117544e21b9b922a4d2dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .model DIN_BG2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 234f0b207005e7ab13fdbfd8b1877ccf778e9c58d49f915cef39683cbf268f79a5a709187240cf5cafb913506e869497b368bc33ae9e4e9b04fae958c1d5d9b4 165f20c6fa9cb4dba9b14dfa1689dc99e2be111508fc4b11b46c6cc479bd7970fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .model DIN_VTHR dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99ebeab298200f84d4c013ad1974f2850f2dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .model DIN_ISNKMIR dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 a87bf029b1b7c65a7df7750bff7da4ee8bb9a27c43a9ae49a9cd0811b1c32d07409df2048fa511424be86f9bea06cfedac96154104e82c83c00b47bad7856596 234f0b207005e7ab13fdbfd8b1877ccf14ecea526ff146cb31a4400e235e63eba5a709187240cf5cafb913506e869497b368bc33ae9e4e9b04fae958c1d5d9b4 165f20c6fa9cb4dba9b14dfa1689dc99f4539598ecbacd117544e21b9b922a4d2dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 7bd607cc6a71a074c78838e7e95f9a234c5e6894b9dab0a4d1af6ca7d9cf4288aab12067e49c9be5e6535c4646967a69529efba77c7ff9b35711ebbeb59e2b6e $CDNENCFINISH_ADV2 .ENDS *---------- AL5814 Spice Model ---------- **$ENCRYPTED_LIB **$INTERFACE .SUBCKT BEHAV_BUF1 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c1236f5c951e5c5dd004a571fa9f02f109a24630c50422b2a5dc9f426fcbf27277f99c89d019cffa18aa82b4548560f7654 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d363fdf1735d0c9673bbb349ee6d1848adcb5f8e6b858867388cfe005d6aa0e46 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 1d3b21f0c5cfb1ec3c523f2ab24bba46f0e385f44adf422341d564867720c14f24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF1 .SUBCKT BEHAV_BUF2 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c1236f5c951e5c5dd004a571fa9f02f109a24630c50422b2a5dc9f426fcbf27277f99c89d019cffa18aa82b4548560f7654 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399dd504c609463db0a46ac194aec11541cddcb5f8e6b858867388cfe005d6aa0e46 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 1d3b21f0c5cfb1ec3c523f2ab24bba46f0e385f44adf422341d564867720c14f24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF2 .SUBCKT BEHAV_INV A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 5d629801781c626bdb78108f94ac773536f5c951e5c5dd004a571fa9f02f109a24630c50422b2a5dc9f426fcbf27277f99c89d019cffa18aa82b4548560f7654 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de40600fea7301cd05c69d1aeef592728148f46 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 1d3b21f0c5cfb1ec3c523f2ab24bba46f0e385f44adf422341d564867720c14f24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc $CDNENCFINISH_ADV2 .ENDS BEHAV_INV .SUBCKT BEHAV_AND2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 7f4d8d07b48671743da119f00e2978a3fc6b74ccb3c944ab337ed0baf91e23f0432d54a38d01cba7ccf13dab6e54ea8cfae1e177b0a9bc3027df9dca022abd20 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d071e8f4204fbcb85ecb70294f4a849e5dcb5f8e6b858867388cfe005d6aa0e46 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 1d3b21f0c5cfb1ec3c523f2ab24bba46f0e385f44adf422341d564867720c14f24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc $CDNENCFINISH_ADV2 .ENDS BEHAV_AND2 .SUBCKT BEHAV_AND3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 7f4d8d07b48671743da119f00e2978a3d1790686e076b08693c8ff1dec3e6e8c70d3542cb93be080db380e2d2708d3e25a0d99e261a09323363d4c4b7d35056c e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de40600fea7301cd05c69d1aeef592728148f46 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 1d3b21f0c5cfb1ec3c523f2ab24bba46f0e385f44adf422341d564867720c14f24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc $CDNENCFINISH_ADV2 .ENDS BEHAV_AND3 .SUBCKT BEHAV_OR2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cdb68bdf439757a0c9a7c1894cf1b55648c8732fd7f98aa88e0dd3534776ff93c 044ecc750a360c43afc194cf53601f2ed487824ccd0b53225aaa56ab9f7974dc64f19899c99d1c4040ad55a828f5d8ef1a0d50912bd5680028d0e5cc53952811 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de40600fea7301cd05c69d1aeef592728148f46 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 1d3b21f0c5cfb1ec3c523f2ab24bba46f0e385f44adf422341d564867720c14f24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc $CDNENCFINISH_ADV2 .ENDS BEHAV_OR2 .SUBCKT BEHAV_OR3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cdb68bdf439757a0c9a7c1894cf1b55648c8732fd7f98aa88e0dd3534776ff93c 044ecc750a360c43afc194cf53601f2ef705a313234ef2ac69f00207be49bd4fe2e75f02732662a3bab2964381a09c7bf54cab319c4c35867fd226a08bc6a7cf bc60f548aeaa5f12f8d0062ab6701195951edbce8de4d907dbddc4a980ba67b7dae1fb261e2b83fe0c5b2ff56471c4babc80e51d772718aef6ae1c87a305fce5 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de40600fea7301cd05c69d1aeef592728148f46 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 1d3b21f0c5cfb1ec3c523f2ab24bba46f0e385f44adf422341d564867720c14f24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc $CDNENCFINISH_ADV2 .ENDS BEHAV_OR3 .SUBCKT BEHAV_NOR3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cd2ee294236473d04ab80823c30c2eba475189bbe04437c3e128683207208874c 4450fddf121883dcd64f79297fed85272ddcf90744eaffa673d4e33266d316a6e4697bcf19702e4526a066b33186371526102d81423512eb4c5b73aece5d80b7 6c4b425b247146f1cf82a5f806d00ac024e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d e111c2a7aec3e4088342a6a17f7d3ef107c732bae18662950d6dc717e77f61129dcac40c7ae2809eab70bf86c2f8b963dcb5f8e6b858867388cfe005d6aa0e46 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 1d3b21f0c5cfb1ec3c523f2ab24bba46f0e385f44adf422341d564867720c14f24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc $CDNENCFINISH_ADV2 .ENDS BEHAV_NOR3 .SUBCKT BEHAV_BGAP_noLoad1 VDD VSS VBG EN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f482aaa9918b7205797a3bd1b228df369c e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d3dc34db943654ec01163ec38b15b61f5fea7301cd05c69d1aeef592728148f46 d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae4fcfe8f61a1fcd852323c3041b6248e02 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dcab5de052a4d7a6370ff8475bf7ce3d467ed970cbb588140abc988f66af568feb4 1d3b21f0c5cfb1ec3c523f2ab24bba46820d386f140d99c0afce23ce5081bed98008e35f20cad0ba12003889b2de10d6da62d4e7ac3d8aea17a66ff004b4dcb1 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad1 .SUBCKT BEHAV_BGAP_DEN VDD VSS VBG EN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2e7858dafabf06dd2675764994eeb5a09595c3b3e2cb3a11ae9dda3c8ae7e596 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d3dc34db943654ec01163ec38b15b61f5fea7301cd05c69d1aeef592728148f46 d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae4fcfe8f61a1fcd852323c3041b6248e02 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dcab5de052a4d7a6370ff8475bf7ce3d467ed970cbb588140abc988f66af568feb4 1d3b21f0c5cfb1ec3c523f2ab24bba46820d386f140d99c0afce23ce5081bed98008e35f20cad0ba12003889b2de10d62786e30c0a7d5acceb868d9feba803d3 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_DEN .SUBCKT BEHAV_BGAP_noLoad2 VDD VSS VBG $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f482aaa9918b7205797a3bd1b228df369c e111c2a7aec3e4088342a6a17f7d3ef1e24309e7da15e27f1e3f72ae456a0fc5ad70af9c2be60423859aa6c8ac640283fea7301cd05c69d1aeef592728148f46 d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae4fcfe8f61a1fcd852323c3041b6248e02 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dcab5de052a4d7a6370ff8475bf7ce3d467ed970cbb588140abc988f66af568feb4 1d3b21f0c5cfb1ec3c523f2ab24bba46d99732c2f3b0c1aaedcda9f387fb067b3a93452ef821ac1c875af808fe2d74038b6caf53d786247860bb1a1227620c68 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad2 .SUBCKT BEHAV_IBIAS VDD VSS IB $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f482aaa9918b7205797a3bd1b228df369c e111c2a7aec3e4088342a6a17f7d3ef1a9c0ac848c277c25d5454e9eb4f74e60ddf3b3752d4ccde4d6757bfac80e7757a15170164d501260880cd1999325a86d 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dcab5de052a4d7a6370ff8475bf7ce3d467ed970cbb588140abc988f66af568feb4 82415293653b1eadb1ddc53673e62ed28c0473af8ac1a2284e51ac7db1e54742b9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae 1d3b21f0c5cfb1ec3c523f2ab24bba46d99732c2f3b0c1aaedcda9f387fb067b9b073ef2c7be40ae1644397760f8702cfcfe8f61a1fcd852323c3041b6248e02 $CDNENCFINISH_ADV2 .ENDS BEHAV_IBIAS .SUBCKT BEHAV_ISNKMIR_3ISRC_1ISNK IIN IOUT0 IOUT1 IOUT2 IOUT3 DEN VDD VSS IVDD IVSS $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cf96e974201d8225b9172682f292e439bbf722e72cc8383f24b73fc1038a34e79 18f5312ba1d7284dbef83ccf5f60bb5ffc6b74ccb3c944ab337ed0baf91e23f0432d54a38d01cba7ccf13dab6e54ea8cfae1e177b0a9bc3027df9dca022abd20 e111c2a7aec3e4088342a6a17f7d3ef16113c426a90ca46c293260f00bd15a058002efc99e19b2c8e764a56aa3a8e6dbc656e6e83c752a3964616d46217c96bc 4b7ae4954cdb84e4074ca0b812afe13d36f5c951e5c5dd004a571fa9f02f109a24630c50422b2a5dc9f426fcbf27277f99c89d019cffa18aa82b4548560f7654 7c80f5d104695480a54673870b66e4b589703a920b6d483b439b85c656b94c4e0d9b34f08631d839eefdc09d9ecb7447615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d209595f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 969146a415d37b3945aa04f72f8849e289703a920b6d483b439b85c656b94c4ef1040e58b42f7c9d11e3a134c11d2f12615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d209595f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 8d8493b82c235c07436c0e798c56d7e989703a920b6d483b439b85c656b94c4e927e455fa372ec9e508fd04c0830a536615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d209595f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 5224515ac5410e9371be888b718e840ae5855dc586ceae448c3588b4fefd9ebdb0518224544d5b72ec86dde1c9143d85615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d209595f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 72b4d86a659952a9a1f8fdc86ddbe01bbe54a185d02368ee960e70b6cd3a1256160a04c39cd3473ab2325a953fd0723d8c824a146fc1e16d0a18cfbd2f121b9b 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8816dc3da02b1684f2cb55defd3b673b12a8ce253989f4aa6b662f989fafac9145 e3b275c5cba4f501e595cb86dfcf4ae46157b12d4aef824874e5f68b206de526160a04c39cd3473ab2325a953fd0723d07370c783180cd39ae1f3b7d99ea9c97 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d88c63fdb30a6bfc231925fee7be600d7eb11ed83013f6e118f7ac2a758af631dc2 ba6ff860da4a7b1953161750ec4bc380f9980d803a453232eb5661593dd28dfd160a04c39cd3473ab2325a953fd0723df25008398479bbc648177d1e74110774 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d88c63fdb30a6bfc231925fee7be600d7eb11ed83013f6e118f7ac2a758af631dc2 004ebda7b3af78c7780c2207d1d7ab0212a483f59273173f893bef85e6ff77a5160a04c39cd3473ab2325a953fd0723d931a0dab4e640dd7ad3e2adce57585f7 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d88c63fdb30a6bfc231925fee7be600d7eb11ed83013f6e118f7ac2a758af631dc2 8d0a0c55ba39eb000d313b782cba47e7c8c585e5aff1134c8df0420513239158ec736c81897f41b4941969627e29f2409b15d54bcf6578960d596c78c6d39ca1 27f8915165e8228fb78d4770f85804665f8729dce05eee68cba3dc31bc4dd8bbc424573c3ec4a6cfbbf96c17600396de6ea280a6396fc613630a9aafafb1680e 1d3b21f0c5cfb1ec3c523f2ab24bba4642d2d0b8a2f007170cbdde09be837aaaad50ea1366dae1a426e9c6427cb1976fd2a49d570a465e3680e26dff01fad220 0c3bf6c1c80d969871a3f30ab67c9e8ce4591d4b07f4ec01c960439d1bc97568a90510cb7fd0548e7bd97dc2381c62c36f3de92dea23ece7e70986a7eba91892 2bee72d9a5570f971ec08f12bfcd8f3a1e04b6e79b9e82cf29c7ba026113745ded5ffe7457feaa26e42ae31b6c3b83b3fae1e177b0a9bc3027df9dca022abd20 $CDNENCFINISH_ADV2 .ENDS BEHAV_ISNKMIR_3ISRC_1ISNK .SUBCKT BEHAV_ISNKMIR_1ISRC IIN IOUT DEN VDD VSS IVDD IVSS PARAMS:arGain=45 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cf96e974201d8225b9172682f292e439bbf722e72cc8383f24b73fc1038a34e79 18f5312ba1d7284dbef83ccf5f60bb5ffc6b74ccb3c944ab337ed0baf91e23f0432d54a38d01cba7ccf13dab6e54ea8cfae1e177b0a9bc3027df9dca022abd20 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399dc004e5a1ebe91d352539564f862f38f569f72953246ce696184825b5852aa158 7c80f5d104695480a54673870b66e4b589703a920b6d483b439b85c656b94c4e3e42b7806a35789a89204bdfcd029af4baaeac90cbbd2cde2263ee3c07423ef3 242bad8c74b3e2d12c435f11bcd7b9b5a36522818e99ebc7c691be6164d899ba36f5c951e5c5dd004a571fa9f02f109a8b210596ea24dd8c98f349d8d6488915 0ad2a1e0d1ecb8b410280ca89efac5d7c943523a2f651789bd2c8cbbc0bcfe9c2a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 b4971c49d2ccc6d8e43e930af28614cb1334916c1997def3a9b5d23188a960db3f9e8c274ccca4e93838fdf4ea64f2357abdbff7ec6b86f986bdb09d1bb06f31 3134905bbcd7c34234b51fab8b576d3153b50224970c369aaf0704ab7cb9a5e7b9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae 8d0a0c55ba39eb000d313b782cba47e7c8c585e5aff1134c8df0420513239158ec736c81897f41b4941969627e29f2409b15d54bcf6578960d596c78c6d39ca1 27f8915165e8228fb78d4770f85804665f8729dce05eee68cba3dc31bc4dd8bbc424573c3ec4a6cfbbf96c17600396de6ea280a6396fc613630a9aafafb1680e 1d3b21f0c5cfb1ec3c523f2ab24bba4642d2d0b8a2f007170cbdde09be837aaa964b041299fcd545513261b72e77b03b14618c5fb7931aede6dbb61c164661be 22dc2ad01aef37b8f7f601fbf6b5b95c8016524b778b569ae4534cb4bbbf6f38bc9c9aab20b1012dd00e421908f716a5092b22619c9b8cc1f952c0530b381283 $CDNENCFINISH_ADV2 .ENDS BEHAV_ISNKMIR_1ISRC .SUBCKT BEHAV_COMP_DEN VP VN DEN AVDD AVSS OUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9ddb1d84d0a8f08d2410e01231d7cac3dd8952bb5621ac2d5d3c71212ba90e984119db8a7ec5a41da9de3a58bb13d06f0a9 a81bfefd2faa7a21a7b82c80de8760c86476c1a6094a9980843d2d06b63db1f734477216e2652cc52103b4a5c6291c2e1c17b26ebad409233be5e2bb2a0a10fb 0c9418f49fde4590e8f8d91dee7c07955f8729dce05eee68cba3dc31bc4dd8bbc424573c3ec4a6cfbbf96c17600396de6ea280a6396fc613630a9aafafb1680e e111c2a7aec3e4088342a6a17f7d3ef1e16a196f94b13893041bc6c353e70c69d6791d362207c859e7858dd5df9738ef82aaa9918b7205797a3bd1b228df369c d8655c4e2b4ce3f2d2894ef285928da621e4fda21c9a75cd2cce11354f47e45e158566c348431a62a459cc3f0ef9535a1a0d50912bd5680028d0e5cc53952811 ffd439da980ca9e75915e1ff16fc953d9cfeca020e1e1b9b89e5f50c398cac8845a699514f7ecdd4a48e21b48dd0960411ed83013f6e118f7ac2a758af631dc2 685f449d8327ac7c103c8a997e84130de59f052cb54e6cd58a26f52025835bcd7ae4889385e121b6194f03967ca43cc2cc532c32af40e07a10794fec0ac97c94 $CDNENCFINISH_ADV2 .ENDS BEHAV_COMP_DEN .SUBCKT BEHAV_VTHR VTHR DEN AVSS DVDD DVSS DOUT PARAMS:arVthr=1.65 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dda7179a2106b30c9e5daa51001a3ee69fd57ee23295e7e52ccdf1a38a6a14ca97606b888de2392d61c12ab26e504f1637 e68feee095d5ebbf714759ae7b074c256a6a2c1d328ccb9d6cf35670b07716940a68a45167ca1f7f2614cf89ae403cfbdd50869c9b075ea55a0c5fc435881c44 e111c2a7aec3e4088342a6a17f7d3ef1dcdb46c968c52a57eefb8a648f3c3f4c0951deb37a2beda5f5b056a6f3fef888dcb5f8e6b858867388cfe005d6aa0e46 8b8927e379db18bffabea9367a778b74b390e9e4956466817f909bc05e58fbe28ce2091fb6d61635d67303cb7198f3d2fea7301cd05c69d1aeef592728148f46 3fd0300256e589436344d787a61327686b17db0ba46a9644016e26b9642ecfde2a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR .SUBCKT BEHAV_VTHR_HYST_VCC VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439a4df40ba0e505f2bf64edbc2eb56dc32 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cd1c6cf10312226a151c626c27054861e4 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a3792e12c64b02d2dbc7453bfde25bceca9 de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e4f83eec25809a148e62f728b75cca047f951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1b9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415a52e6b4b3d4c6a9c237202310173df169f13c382fe111b2893698c399b4a49095 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4c6601057589b5a2098249076844f8e30732e1d52700bdeb1932e96b009b6de411 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe28ce2091fb6d61635d67303cb7198f3d2fea7301cd05c69d1aeef592728148f46 8a148c7e2c90cc798fe030e76f591a69fc6ca8049868753be61d07ac56f1e9052ab4369818381bc7dfc8f232d22745e2afcce451bd35f3f376b98b7a7a80e72b $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_VCC .SUBCKT BEHAV_VTHR_HYST_VFAULT VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439a4df40ba0e505f2bf64edbc2eb56dc32 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cd1c6cf10312226a151c626c27054861e4 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a3792e12c64b02d2dbc7453bfde25bceca9 de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e4f83eec25809a148e62f728b75cca047f951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1b9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415a52e6b4b3d4c6a9c237202310173df169f13c382fe111b2893698c399b4a49095 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4c98da52cd0095d34171cbe91aeb71e9b63cddc4460690f9ba81cc8faf32b26391 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe28ce2091fb6d61635d67303cb7198f3d2fea7301cd05c69d1aeef592728148f46 8a148c7e2c90cc798fe030e76f591a69891a0bbc4553512a1afa0b2e227228432ab4369818381bc7dfc8f232d22745e2afcce451bd35f3f376b98b7a7a80e72b $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_VFAULT .SUBCKT BEHAV_VTHR_HYST_TEMP VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439a4df40ba0e505f2bf64edbc2eb56dc32 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cd1c6cf10312226a151c626c27054861e4 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a3792e12c64b02d2dbc7453bfde25bceca9 de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e4f83eec25809a148e62f728b75cca047f951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1b9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415a52e6b4b3d4c6a9c237202310173df169f13c382fe111b2893698c399b4a49095 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4ce3a2fcda99763e8f5feb8466203051ec45609eaf3767d9cf6fbc8892bdc42f14 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe28ce2091fb6d61635d67303cb7198f3d2fea7301cd05c69d1aeef592728148f46 8a148c7e2c90cc798fe030e76f591a693261320e118c1ecf656c1256caa7211dd2b2654ddcf71970d3ad791b6526020d9083b4c7a7adce1b55ff40c9a37d3a17 $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_TEMP .SUBCKT BEHAV_TEMP_GEN VDD VSS ILED IOUT TEMP PARAMS:arTheta_j=90 arAmbientTemp=25 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 2fe021ee4920ebc0b15ff7bc901583a1c8c585e5aff1134c8df0420513239158ec736c81897f41b4941969627e29f2409b15d54bcf6578960d596c78c6d39ca1 f2737d807680651bc4aaee489ce72710c8c585e5aff1134c8df0420513239158ec736c81897f41b4941969627e29f2409b15d54bcf6578960d596c78c6d39ca1 20e3127dc65b7b7088269d46b21b6d3df415c561884458cf008504904f53feed3a753f14b25c02d17b4d745ff573b24b812f489a9b757a60e283aba800f94621 c27d03acf02f663db9ba018ec7a6c63908bca835f546932742dafd516544d61f1732065b80b68024a1bba46fc2caacfac93a5252cd67fb4d7d9f8782895f6c72 163c6c82d00fe2c1e829286bb831e6b6c8c585e5aff1134c8df0420513239158ec736c81897f41b4941969627e29f2409b15d54bcf6578960d596c78c6d39ca1 0fdfc09ce687efe1350bfb1632a911a614fc17b0bdf917cb05651f787b7f5b7a2a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 $CDNENCFINISH_ADV2 .ENDS BEHAV_TEMP_GEN .SUBCKT OPAMP_SLEW AVP AVN ENA PWM AVDD AVSS DVDD DVSS VOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9ddb1d84d0a8f08d2410e01231d7cac3dd80cb67ca54386e5c762431757c65d98e1606b888de2392d61c12ab26e504f1637 b37bb30e1d4328b5b13665e742fcb5d0d65eedb57cd472315ba0d271a55f2b2b9d4160c7645f4c0c8c34982bb35bfaf6afcce451bd35f3f376b98b7a7a80e72b 8cde6e01a4f84ee59858e809083c79d12085c43b8c2037a1981f1ca91878ba99b93f44e00318e3a3b7db66fb4181fc8b62b54da525b6fd76ae78a2a0be396110 601836f2c6cf73614c0e6409ac4c1cb9fba3b40d45a6ab2128a6e6acb0e85b49b06500cfbfacc781f3c08c92b38794095ecf1524da3f993b6bc25eb515f1da11 a2e012f6ec7f535428cdc24a21c0a82e6af3d1b44caaa9fb19210d967f6138d9b06500cfbfacc781f3c08c92b38794095ecf1524da3f993b6bc25eb515f1da11 3ad54d7a4d31de15e280c6f45c4fce62ef35ef92c7952ac93e1879fc8560aa12fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 327553efc10baec99d9927b4623f99d02de2f44147c41760d876d8c12dbe1deff415c561884458cf008504904f53feed98cfa0463765edad72e09a192cff7166 f6f18544cbcbbf35ea93c54cc05b700879492c73dac52ddaf0022e9e6a0b5ea2b9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae 64890e15247841c63e77f51bae1e2e7399f0b56ee43fc61870400e101d7cf1fec1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 b9af1d4ae47007a9853568c4895394f3f66494cac6c9f582b6610fe94832b4dab06500cfbfacc781f3c08c92b38794095ecf1524da3f993b6bc25eb515f1da11 94d027b174c1013b00f8a4698dfb178af8aa883cb6cfca74d662fa46780cab5a2a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 224d7b556ffb1bbacfe5d2ed6193b3c36fc492beea40b02c838d12e56b3181eb2a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 68911a8b7526ae5fd35116eb69d2844f5f1643c14e02ef9bd153a39d7db89bb1b9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae 0dcbada07dcada0540e2dc1911a5c4a318de7239899f2d708e17eb2d98ab9ef0c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 685f449d8327ac7c103c8a997e84130db7d6bb52bcccb9580fb535c090eabfea2a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 $CDNENCFINISH_ADV2 .ENDS OPAMP_SLEW .SUBCKT BEHAV_REFSYS_FUSE VDD VSS SEL_5PIN_EN SEL_5PIN_VF SEL_8PIN_EN AWAKE PARAMS:ar5PinEn=0 ar5PinVf=0 ar8PinEn=0 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd8598ba0f60b3ca4f8a0b372f0d8906feb71bc76e5d2c01eaf5b3ed4df3244a7be0fd15ac77c70bf5fe0f5e1cc024ca7b e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de40600fea7301cd05c69d1aeef592728148f46 2e73eb78f44c807e6d882a20fa8f77d7b9a874b3055e308c412c7f3aac1fdcb057f4f911dd9e5fba9a1c3e5ebe99382460d0ac66294421c57c2f71608e90ade4 617bc50d9322ae7fa644cef00833126ab9a874b3055e308c412c7f3aac1fdcb0d7013f68d86f68e9c9af029a2f8c605360d0ac66294421c57c2f71608e90ade4 1471b79070b4eab8b92f0fe620451818b9a874b3055e308c412c7f3aac1fdcb0a711213d5d055c9d722b9f124dd2b00b60d0ac66294421c57c2f71608e90ade4 $CDNENCFINISH_ADV2 .ENDS BEHAV_REFSYS_FUSE .SUBCKT TOP_AL5814 VCC_PAD VSS SET_FAULT_PAD REF_PAD V_SET_PAD FB_PAD EN_PAD V_FAULT_PAD OUT_PAD + PARAMS:TjaVar=90 TaVar=25 Sel5PinEnVar=0 Sel5PinVfVar=0 Sel8PinEnVar=0 * INTERNAL REFERENCE VOLTAGES $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 b13c86a1d5059658fef20b8e384b5efc3c4a794fe0a5c03ef9c53e30419dfb9424e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc 0cd33ae9a95b52968343defb8d5ef192ddc2dc1d83f3803e5218d4c2addf03ac885caa93638433ed1bc780d7094b6da462d5db8eaf651f0d374dc82ee07ebcd3 16cca5b342db76d24f19228eda5f6251248254616197d83f64ef8ebd1d2ea43dfb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 3f913966a0d36b6856d2464b8a408be1e5e0e45a6b921954bb7f23c91267620cd11b8f69441a17c2fccbe3e491c105c1e5ff38b993b51594f00bccd0b58e84d3 65f8c71b66fd5d6fe2c389223dd91db58409cabb8fe2c9a015ea16bd970745e4e1b5e475a90deac352423dc14c92d317e5ff38b993b51594f00bccd0b58e84d3 50a6dbb18bc75342861f2e6941ab0333f9bc25da93253167732402fd86b5d7e7259653a376bb4ae509e5a421417a18f1c494e66c576962f0e3b663eaaa5cde7e 44182f4277d17cfee56e817e04f550da13a7652a5d002c6bbfb75b0fd7ec7ee4577ddbf3cb1a8e0296f7bea265b70ca10245b0daf5dd26441522378c7bfda65d 6ed9acac35d64189a592788897b1f1ac4603d105f6ebffa9909f152e41007edbc47476de1ab9a932eda5bf339bc421bc9083b4c7a7adce1b55ff40c9a37d3a17 40e2937d76cdfbb1e40f79ddf41bc9321b08281f818ac462ce99f8a7799dec6b5f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 f79c10d351ea31a920ad08bd44970ec5a8717bf732c5665abf62c8b15ae0e2aefb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 37560ffc8a897158de79e5523f0d4f94cf61f90e74f77398db44c0a6b058c8540cbf39fee1642bb468fe52dcb5f8607970ab029ed563a3809cb692ff9af63337 2dbdd6c4a5515b74d96e53efe0ef479e951edbce8de4d907dbddc4a980ba67b7dae1fb261e2b83fe0c5b2ff56471c4babc80e51d772718aef6ae1c87a305fce5 8a8f3f4ba7405cc668ba14ff96f598a201f16f3715f27e465039a5fbd360df848b464895c4a78055d24cd6f158512514dcb5f8e6b858867388cfe005d6aa0e46 d39848fbda05a05e7ac42c8c248403f04dd697483072ecc8d2995da8c5ebdd0ebfdc50c9df6ecf60d848a4c7f2b479e91a0d50912bd5680028d0e5cc53952811 4e44da540303161f2e39c4ff87237556f44260e3647cda7856a0447edef42c220d2d5b47293f431a70cba8d714dc6472468227db2f5f7bc6506f6faa3df52bd7 4d33869ccdef1f2d69c91044b452eaed5209411427d62e7cb47b37aa3183240903245222455d075843a0213491958d4ed2eade8c8fb87af6a7933c04b6d8af74 75b42c20f4f98171c3ed339b4addc782a9d6e9035cfd407c4463503b2034423dc1e1dd74beff1b41e88495a3973b702cff1a65bac0288a0749a44071b2497da0 b9539a448712a87bf0ab0bddf2fda720af37121594ae9defbe6b463b178d1768d974d98616bb5a0312cdcb362bac9214f13c382fe111b2893698c399b4a49095 e77f18bf66c31ec52cf66c43bd736a58d0b9f7d394ee5ed0c9f4293d64aebdb2daf4a8fea2e283f41764e993bbbdd303c821e4688a22abc1b6fca28fd22369b0 407047534e3c18da2af653044a77c1700a685ea62a2ea3bf5d22932fa810bd655f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 62f125d631c09b20ccd6a4195be4c3875a9fd0867e7edcaaedc3d9a95d0e7d8df62e61d699928f709e4555942b89a81d95f28468b035197b1e0bdc468491e9d5 121f97ffd99f439de4eba6763e94b4f90e6bc26aff93d323dc69ffffa0146ac987367aa7044d662e6866e4a0a4c56d2bed970cbb588140abc988f66af568feb4 af0295eb3fa98d83e17dbf52b4b2ac8dbe2479d50b1aa9a2def9a0f86cfa8bf83c445be4921629a7706c463159d4759978b5e762bde405dd5ecaba36d1d4044c 406257312aa2590a67043d3a4a849acbfadc44e95b6a0016e7790ae757b46026cf3888132de3a383db1950ed14443c2cdd50869c9b075ea55a0c5fc435881c44 973fbb817a5c6b18d4dcfc6399d5d8119924321a1487fb3a11fd8a03ee93cb2bdd8d045fba81e6b08a68c81505dac356f13c382fe111b2893698c399b4a49095 4029b17456d1fa296b1302c0a941f85ddf0312452ebe46b8172156122ec3b9855f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 12f0f2801b9608d3c1f0cc4b9fc325bbf093a625bf11d6b68269ade5536e020af66494cac6c9f582b6610fe94832b4daed970cbb588140abc988f66af568feb4 0dc43a8702af797df3b51560d88ca73ba2c0fa271927edc9029b58138022458355cb13929e15668d17e76d0a31eec268e5ff38b993b51594f00bccd0b58e84d3 d4193cf59edfca856ab9cc068ca3a6947d4cd7ff73402c2c946035eaf0d454b1a7092fcfb4122b1b6ad67b53c6ecdca5a15170164d501260880cd1999325a86d bffc25fc793ca80dcff62c91f4f16ed8bcd0327f37297c751925f9b8550be3e4001694d2451c576e337d589f9f9d15c86fe0b517159d859082c7d2de9540f75b bb9b30a7a1910269b258c3612cc70dcff415c561884458cf008504904f53feed3a753f14b25c02d17b4d745ff573b24b812f489a9b757a60e283aba800f94621 83136f93efef522786c7c17d1910412245973e95febaec2e13b1e630876e43c567592b20887d4f2ab3f21c0a1b43ea8dfcfe8f61a1fcd852323c3041b6248e02 546da40a20d02325d07b0754f13d25a9de586abead0c91b5c5ebc75d334dfbb9e79f6869976a40b12ec1e5d81a4433a95372c453ef93471c4734032055bb0962 5cbe1bbf1cbf3a74d24c2ba476d87961f79adf6acb26411ebeb53989c261ee48cf716078ce2addeca9d8e8ae14eba1843bfb4b6cd8c314e790251ea4d62a9e3d 33a4d8236d5fea6cb3dfb670540e2738a7fdcb44547c3bf3874abbc95a30aeb6f3de955b2f6966a8315b8a43c0355d62ef27089e0532fba7810d6dec34c4e687 2f9313824791ebfe1fd87050d435d75cc1e1dd74beff1b41e88495a3973b702c1e29afa7599e90be24ea46e70b35c4d67357a6c4ba35fb4d87eda9c0ab7a8a2e b5272af1ae54c2b3a9c28f23653599cd0b94b9b0879ae9b234c12616bf619f556d2485b412b6d2b33b192eebe3ab90009083b4c7a7adce1b55ff40c9a37d3a17 e9530056431a065d090c465d74758654968d3a0ab5502ba3fc18768aaa7b70ce984b0ed9ac790268a9f5053ef09e361f3d0e9cbcd3a004a9e256e75843b64421 78eb37bd10671d445e1b54f35565128236f5c951e5c5dd004a571fa9f02f109a24630c50422b2a5dc9f426fcbf27277f99c89d019cffa18aa82b4548560f7654 5fe37d3b00c548500861e70c6ab96fe60cbfac9427bd06e393577917a5a92609fd2f12ee88ab621abc45b6e6d0d25dc5c492c6c8aa45845a1660d0d04a012644 688a116e56bac7bc82a1adb1b8ac7f686d66535b717a58059aeeb8e949455b83c11b353e8291adea59d4909e1a32b9761a0d50912bd5680028d0e5cc53952811 eabcb037c2adc3e621b71c241baf2d66d4f969c9cee8ffabf926190d3d5c3239fac83f1184e3a82f4e1da1618fbf7e894ba184767b04da735a2601f4835169f3 6d363e3278ff62969287c9da8b69dfdfde8a2dc48b1a7d3f69bdcd064275706d8281076424d3530b4b7ffb1c655e0ff0a71e69027522123ca7470a731eda47d2 9a7b47f95f9990bfd881d2e18986b07bdf9e850e55e1acde336902e8bb41c5412a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 f0de08da966d40726b72a7c0d085115981a9de3d33e38b0f58d3c0505119aa517a693b3f98696629a08dc9268533f6b2ee4a204685921657491261a430fa9fd8 75a9b963246ba8915e018a64ce49af26747137aeca3cc3518d52aae389e69343e86da5703134e41a0f22498d7f143d19e5ff38b993b51594f00bccd0b58e84d3 6f95d0f096c335935f5b8a6cf8711a959e2929502fb257bfba253c4c9420343ac5cdaa627d5925a09805c73928c7b52cebb0a0c23ea29c78bed2ed8b8b8ce921 1a70135b64229bfb302c0680dcab350f0c1fe12af36086be1745e17adc48bfdac1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 8875eeaa02a878028b5d6c4d0eb20527f6afd0d4096d8febca4802c1f9668f6736f5c951e5c5dd004a571fa9f02f109a8b210596ea24dd8c98f349d8d6488915 c0fd8f1b24fa26485a3a8f5cb680e66e3c099a099b49ad758216875a6b6c3d0d037e1f993663bb22839a9adf54d88e2bb510c2d4f9c47316c3fe6e6bbe90560d 07bb7c8ded7669ba0bb66fabcaaceccd5a55f04b7bfe2f4e67d41a5b71952809c40cdd98131bf63b5fe4d3f7f793f88ae6b845667d95ffecade32a681aab647f 430f50b4bc452a5199c15c4058a6cd5d5b6a8f5b4aab939cfc72950374dcdb8e951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 ee7618e90b475f2fa36c0df1ceb2f3bb2ae03b642ca14814e09501d200b822299bf7961e84119b3911d7d51d588935dae100b1eec337f2e4c0a14938105851d9 13499fcd54c56c4528200433024b186cc8c585e5aff1134c8df0420513239158ec736c81897f41b4941969627e29f2409b15d54bcf6578960d596c78c6d39ca1 1be332166e547eee18a9abe56c4f0343ed9fd8075e2eee5543747c3318eb2a33c1e1dd74beff1b41e88495a3973b702cff1a65bac0288a0749a44071b2497da0 92a2db20fb29f65023a80c7ec478c3d1fe50b069c7dfeffaedec8cf7a2485e4df415c561884458cf008504904f53feed98cfa0463765edad72e09a192cff7166 94e55319aed85665e668d2c65b60993df93c472d2ced5f2f8e9967ef3dbae717c1c59e71f67610bde3998ea450856a73725d576b2b1251388a9b0d2df3d01ec5 $CDNENCFINISH_ADV2 .ENDS TOP_AL5814 .SUBCKT AL5814 VCC_PAD VSS SET_FAULT_PAD REF_PAD V_SET_PAD FB_PAD V_FAULT_PAD OUT_PAD + PARAMS:Tja=90 Ta=25 Sel5PinEn=0 Sel5PinVf=0 Sel8PinEn=0 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 498c281ccb083b0c0e55cf0230437a75420d1149c3e0ccaefce68dbb31530fa4d539947cbac2ee91dea2843de03810ff0920e2c975c750fe78d47e28ae371dcc 4bbd087d38d235b237f5ec8ed84043808b27cbfa345064d7fa2f8df205f5ccdf5a64156b0b229f00af0478f0116190fa279da9a95c88300fc67ce347c5431c4a 34b2956325c8b2f15c68f584d6c2747704aa98937e74cb7216adfba225d36c9df512d822438374f2a31192bff16c0a9459650c7f0fd26106a8028c2380f2308e 362e9a6fb9b7074ab51c7796050fce66f415c561884458cf008504904f53feed3a753f14b25c02d17b4d745ff573b24b812f489a9b757a60e283aba800f94621 11f315fcb28e0535d5ee304d59fd0103999bb2dfeb302211717ed9a8c00821955f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 16629dd40c434d81937539d504c81e96ef35ef92c7952ac93e1879fc8560aa12fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 14af3039ad682c28c791944b5d8aeaa0209b8baad5240aa0ff95e468bbc742f4893cad2da833545be61c08d3d93359c07ae83180f556c57686594f50ffc8aabb 74a49953508548e27f44e61bfd774a94ef35ef92c7952ac93e1879fc8560aa12fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 066154e35611375de41ff12f9d9afb97447bee820f26c7c04312c1b837edcdf0885caa93638433ed1bc780d7094b6da462d5db8eaf651f0d374dc82ee07ebcd3 35fdbc231b058463338051c0644508165d8d3baa1512ef4df4f92674df32c88af79adf6acb26411ebeb53989c261ee484b97bc8a98f9839d005e69c2396241b7 440b27681ce3b1c6da10e09a959d13685d8d3baa1512ef4df4f92674df32c88af79adf6acb26411ebeb53989c261ee484b97bc8a98f9839d005e69c2396241b7 9044f2ace17729c28156f81fa3d4c6f48d73009e8199f146d89d89b8860e6bfa5f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 97dd084e6c068cbf65789583f7a57e3cef35ef92c7952ac93e1879fc8560aa12fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 3b49fb5f8dc29202c89753ccf8c2fdcb4b8440e5d772898d41aaffcad02cc848b9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae 758668214ee91bd34efdb62258804fe57f07eb16589bec0460ceba8532982d885e65648c6f8ebb20192cc29ea2a97e07038d012b090a7d13bbaf23b142b44b50 0fb73c3fe943e8b4692b8e1f75499c6af415c561884458cf008504904f53feed3a753f14b25c02d17b4d745ff573b24b812f489a9b757a60e283aba800f94621 7114bfeac982282d320add93945cce45bafcc01c8b57a8bf88f65322c704a08a7e3bc71c7669dc3c3479614677f39ebbfae1e177b0a9bc3027df9dca022abd20 3e0ead198e425e3a51f56806b2774f269d8dd8cfa71b0991789ec2a73784d25c951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 d7888ab1c595ca0f15778ad6d15b66b57f07eb16589bec0460ceba8532982d885e65648c6f8ebb20192cc29ea2a97e07038d012b090a7d13bbaf23b142b44b50 44db56b0f63fc16080a61c0273f8d4bd893cad2da833545be61c08d3d93359c006c4b5d45c3f16aac9a68eadd870d669cb3848552da990c77406b39ae40745b6 2eb7dbcc1e30467782c82bcbec1051de6aa3acfc3c73c3e5835447060ecf4c99c8c585e5aff1134c8df042051323915822dc299dcf8ef53a0e6028dcf6cc5684 d626c05c9b7c05e5275645816d40a3ccb9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 f9c21e1d6a9e9fbff3d8f106afb9e6845d8d3baa1512ef4df4f92674df32c88af79adf6acb26411ebeb53989c261ee484b97bc8a98f9839d005e69c2396241b7 7a7c3df3a3f195fde9d999bedfec05fdc8c585e5aff1134c8df0420513239158ec736c81897f41b4941969627e29f2409b15d54bcf6578960d596c78c6d39ca1 365df52ae3a7aa16df0aec200f37f6785d8d3baa1512ef4df4f92674df32c88af79adf6acb26411ebeb53989c261ee484b97bc8a98f9839d005e69c2396241b7 29820dd5a67b382bd0bbc4d6262b6f69c8c585e5aff1134c8df0420513239158ec736c81897f41b4941969627e29f2409b15d54bcf6578960d596c78c6d39ca1 5a29595f94a30dd8e0dd33d518e03e28094aa781e0ecfc5c646145577d5afc2dc1e1dd74beff1b41e88495a3973b702cff1a65bac0288a0749a44071b2497da0 a5561e9abd897d6df2e418bc07c7c4d787367aa7044d662e6866e4a0a4c56d2bb06500cfbfacc781f3c08c92b38794095ecf1524da3f993b6bc25eb515f1da11 3fe1ffd451565058a87327377ae6248a7f07eb16589bec0460ceba8532982d885e65648c6f8ebb20192cc29ea2a97e07038d012b090a7d13bbaf23b142b44b50 b701ccb42d43c16baae8217fd507bf40893cad2da833545be61c08d3d93359c006c4b5d45c3f16aac9a68eadd870d669cb3848552da990c77406b39ae40745b6 $CDNENCFINISH_ADV2 .ENDS AL5814 .MODEL BCP56 NPN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 d4cbe0c62df2cad59b1e45988cdeda4ed74526f928c00affa90f5cef74d33ead6af3d1b44caaa9fb19210d967f6138d9ed970cbb588140abc988f66af568feb4 86e6718ce693d8aa4fde7eb7526604ff2772300722753ccc2a262abba17cf856ccd531611823001552af23d374258f84bfcf400a12a7565a88036dde6137748d 3ea3db14bcf19e5cc52be965a744e11a8e5e53ef04da41eeaf87af327c2da1c6eb9066ac6e792bb624b9ec4020804bdc76d9285d79f6b98bd435d78c4c2c0d7e bba02babd62bd845edf32fef31e16069b891ab108120e4368828f42d2a8e57d985525b57f6e09d7f6a0f9c8c706ca91a02ad6d3ada125c8789947a8a10099fab 4b18924fbd82417a81af9cc8776c5627f2004de1fe3328183acb99c3201c1f013a88dba75b4138cddca669839f0e739993facf4886dec637969352a2c936ebf0 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL MLOAD NMOS $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 7eeb9c0ed81c009e5c85f2d161da370fdbb34d93fe1e0d2465d31b0f370b0b065f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 670a7dc18237996c9cfe8aefcc5690b0448555a4f6a0618a458e21b60af78cc6951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 $CDNENCFINISH_ADV2 .SUBCKT LED_8V IN OUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 964ecaeb5607f1ba9295b40ec73e968ac1e1dd74beff1b41e88495a3973b702c1e29afa7599e90be24ea46e70b35c4d67357a6c4ba35fb4d87eda9c0ab7a8a2e 5e1604529d7f2a48d2f1e70629fcc1d7b9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 e1241ce8881172a9f81c62a19ce60a4eb9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 5467c2851c36ebe3acca1ee2ef9e5eb3b9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 8ea6b42e4b19785afaa0cf44390f272fb9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 eaea13824faab259b3b241d9d14e12b1b9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 9818535d7895627e0f17af07a1d19421b9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 2a7a7dadfc0175ff1142924801ee5f3db9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 53411dfc14d4f3cabdc66726f7b565c3b9c9e7d2cb122878f2cd2966f7800b8054c396de294ec6d78113a261f1395fecc95990c3ce8509a5867bd23d9f31b7f1 0789104cd463aba4c524aad5c18530b8c1c59e71f67610bde3998ea450856a739dd588805087288ef46b0ed1d714945d6b28057c91ca4f890624cbdcb956e72a 5c8e61db545938b8fffc53e8e3705d6c4311bd9019d26a45874aa7a1c22ed1f0b06500cfbfacc781f3c08c92b38794095ecf1524da3f993b6bc25eb515f1da11 781b70ff966d271b52c7201aa01ffeb9fd8e28547842e74f675ad113099720c6951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 $CDNENCFINISH_ADV2 .ENDS .model Sen VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 c9b0641a35c857bb3789b3e21ebc4df12a16499b630d4336324712aea88e3d3c24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc f8730028c5d3490486715d64987d57a74e57e6f616f730278d5f3dd32dd1a667951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model Smod VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 56cdf838d91a1828b2f10df2f5693def1b93063d82cac8ac93a679398923ea65f79adf6acb26411ebeb53989c261ee484b97bc8a98f9839d005e69c2396241b7 97e1b4d74bd0d8fcd286ca8d480bb8823bfe029f78e51756ad161aa627eb9f00951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model Sout VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 37626a38a57a7f38a80219a57bdb734317327c2ad030fa55693d7e03206cc6cffb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 5f08a29b23de343e5cf4e03543971a453bfe029f78e51756ad161aa627eb9f00951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model Spd1 VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 23bd934d75f2e52fa087b3879c1efcde17327c2ad030fa55693d7e03206cc6cffb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 5f08a29b23de343e5cf4e03543971a453bfe029f78e51756ad161aa627eb9f00951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model Spd2 VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 65f81053bf4be1a9de744cea9bf3c2321b93063d82cac8ac93a679398923ea65f79adf6acb26411ebeb53989c261ee484b97bc8a98f9839d005e69c2396241b7 5f08a29b23de343e5cf4e03543971a453bfe029f78e51756ad161aa627eb9f00951edbce8de4d907dbddc4a980ba67b73ff61747c08e9c1bf6def4d0ca43e991 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model Dsimple d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 8ac03806a6d6f724c8473bdd52339dcec8c585e5aff1134c8df0420513239158ec736c81897f41b4941969627e29f2409b15d54bcf6578960d596c78c6d39ca1 db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model D74 d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 75460640a3186b4ff39d254f7527cdf7b56870c0eb97140a206e3084eaafcdfb36f5c951e5c5dd004a571fa9f02f109a8b210596ea24dd8c98f349d8d6488915 db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model D74CLMP d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 646799414338b0c9354194d5b70aa7a612a1ffb81a2eed6bc075f8ec54c80782885caa93638433ed1bc780d7094b6da462d5db8eaf651f0d374dc82ee07ebcd3 db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model Q74 npn $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 24ffa71e874d149a10b2c92ba5c8716dfe0cb0dbb2f84979aba209362f969de0fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 746924b950a2bc290a4e53b0267d84b8c1e1dd74beff1b41e88495a3973b702c1e29afa7599e90be24ea46e70b35c4d67357a6c4ba35fb4d87eda9c0ab7a8a2e cfe965f35139ba298051e2d8f8f3da6cb7b5bb22900eaaec0dece50a4624c6a524e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc 0eef750c1b08bc7410ebe4be9da9754fcfe7c8b6550658a59d160d93638f6f7924e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc e775ad024035b735dcbc5ed1857829e85e8fe5317859e71e769fb287d39de0052a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 811290e6cbf6784ed54a134aac29accf5164f604a1d65a88a11bd8e9d2a57c4f24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc b2ba60de915f7a79394f2e6b45f68e6e9ffb03b2c3d26bde59450e0c999e5a2a2a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 efe68e5febac8dabb5bfd782b5d9d7b8c1c59e71f67610bde3998ea450856a739dd588805087288ef46b0ed1d714945d6b28057c91ca4f890624cbdcb956e72a 745d23fb01ef2d6605bbec6e552d54f7885caa93638433ed1bc780d7094b6da4dab5d402c0bb3f1607411210e395b4e2d5b37aff4f496e1117870e68dcdacf74 db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .MODEL T_BUF UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 d3d8b39b910562897aeceab961eca61e951edbce8de4d907dbddc4a980ba67b7dae1fb261e2b83fe0c5b2ff56471c4babc80e51d772718aef6ae1c87a305fce5 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef52150e40e02a7724a92970be292a553a4e473f13c382fe111b2893698c399b4a49095 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c2111e40e02a7724a92970be292a553a4e473f13c382fe111b2893698c399b4a49095 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_BUF1 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 d3d8b39b910562897aeceab961eca61e951edbce8de4d907dbddc4a980ba67b7dae1fb261e2b83fe0c5b2ff56471c4babc80e51d772718aef6ae1c87a305fce5 2c59efc8237a0898d382be2ede8701a595041c97a76684e910beaf2f6a1c0d8926ea52a8065eed569c0bcb4e29069f26a15170164d501260880cd1999325a86d 1411fc0582296e9e4300da8fa2d82e92f16beaa3c636f4024c334542a7664b07d6f73a6a2d14b728ac8c23004fd379e982aaa9918b7205797a3bd1b228df369c 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_BUF2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 d3d8b39b910562897aeceab961eca61e951edbce8de4d907dbddc4a980ba67b7dae1fb261e2b83fe0c5b2ff56471c4babc80e51d772718aef6ae1c87a305fce5 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3efa294f54ffdea8800469ac40e7d21761a0d50912bd5680028d0e5cc53952811 e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027efa294f54ffdea8800469ac40e7d21761a0d50912bd5680028d0e5cc53952811 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_NOR3 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3efa294f54ffdea8800469ac40e7d21761a0d50912bd5680028d0e5cc53952811 e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027efa294f54ffdea8800469ac40e7d21761a0d50912bd5680028d0e5cc53952811 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_BG2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 e6111e304b7b0483e1347fd711c855ce7314896fe405611ac89677aadd176d95ce0298bcefe9f408be71ce225360c4031a0d50912bd5680028d0e5cc53952811 77582d186faf9f922f6138d14bee2b5d53aab8ccaf3361b70732a55a922f27d6ce0298bcefe9f408be71ce225360c4031a0d50912bd5680028d0e5cc53952811 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_IBIAS UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 9c64b132a42898a08d0377db7bd4576c3ec70c319b72b2d6ed30dceec9b35d7ceee1ed0b32127010f1a5f49fa5e9af301a0d50912bd5680028d0e5cc53952811 62d2d1cfaa8d3bd5e0cfaa3a71c0a2e17a3a3600ec8bb118d56f460889a45a63eee1ed0b32127010f1a5f49fa5e9af301a0d50912bd5680028d0e5cc53952811 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_ISNKMIR_3ISRC_1ISNK UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 f0faa082395d5e3eeb8fe11e07469b9f948d4612f5ff8d9681828a6fb42bbfa5de193bcd965f07c8e10fd13497823a15dcb5f8e6b858867388cfe005d6aa0e46 dc9c49c59370aed9c937040175edd0c235fef9707227ce615b983b6c718615ffde193bcd965f07c8e10fd13497823a15dcb5f8e6b858867388cfe005d6aa0e46 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_COMP_DEN UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 cc968e09d3f08b09bf3213b351baa16a6fd7ee29bdaad8d615b26b479866375079f1beca9ebd4040a4fb62a19e8acba2dcb5f8e6b858867388cfe005d6aa0e46 5edc4278cf942a1dc268dbff37b837cf3dea5cde435a702813f859224a446ddd79f1beca9ebd4040a4fb62a19e8acba2dcb5f8e6b858867388cfe005d6aa0e46 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_VTHR UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3efa294f54ffdea8800469ac40e7d21761a0d50912bd5680028d0e5cc53952811 e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027efa294f54ffdea8800469ac40e7d21761a0d50912bd5680028d0e5cc53952811 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_VCC UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 f73c26f36e898e81de2893d9ff7a8aa96af3cd573a9290181dbd4af508e14fe58db688de76d55a8686c2936588fb5f00a15170164d501260880cd1999325a86d 7aa3578626ed56763645cbc0caf4e54e9930d2c3c4f516f9ff61607bfee470270d6ab3dcea2246fa1faba759ad8dcd0fa15170164d501260880cd1999325a86d 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_VFAULT UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 9614c8b26c8aaae2fe0b9359a6692faad6f976a970547953643f76097a1720f63605820e76cf43a0e69b170c2ffdd92af13c382fe111b2893698c399b4a49095 1aa05dfabd8cc1863c46f52d29dd985b98e19709b0f06018e259ad803e50ac883605820e76cf43a0e69b170c2ffdd92af13c382fe111b2893698c399b4a49095 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_TEMP UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3efa294f54ffdea8800469ac40e7d21761a0d50912bd5680028d0e5cc53952811 e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027efa294f54ffdea8800469ac40e7d21761a0d50912bd5680028d0e5cc53952811 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_ISNKMIR UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 4a0bc5fdba9f65b841c32da58b20cbe66a507b4839199c775889817a20825d163605820e76cf43a0e69b170c2ffdd92af13c382fe111b2893698c399b4a49095 1aa05dfabd8cc1863c46f52d29dd985b98e19709b0f06018e259ad803e50ac883605820e76cf43a0e69b170c2ffdd92af13c382fe111b2893698c399b4a49095 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_SRFF UGFF $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 65d36f6542c7047860f7993459a746aa6a7e0b9139dbee8b5eef1fc0ac7176be821fd180a681bcab439679a1e87fdd3edcb5f8e6b858867388cfe005d6aa0e46 a4d398c7d8b82997fc8228d98eaa2bbb1fda409fdfcc8182cefbdf39b9213e4433bbe34be17f39f017cbfc4221b97c34dcb5f8e6b858867388cfe005d6aa0e46 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_AND2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 d3d8b39b910562897aeceab961eca61e951edbce8de4d907dbddc4a980ba67b7dae1fb261e2b83fe0c5b2ff56471c4babc80e51d772718aef6ae1c87a305fce5 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef52150e40e02a7724a92970be292a553a4e473f13c382fe111b2893698c399b4a49095 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c2111e40e02a7724a92970be292a553a4e473f13c382fe111b2893698c399b4a49095 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .MODEL T_OR2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef52150e40e02a7724a92970be292a553a4e473f13c382fe111b2893698c399b4a49095 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c2111e40e02a7724a92970be292a553a4e473f13c382fe111b2893698c399b4a49095 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .subckt DIGIFPWR AGND + optional: DPWR=$G_DPWR DGND=$G_DGND + params: VOLTAGE=1.0v REFERENCE=0v * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 70377785674f05234daf157ce38e73dacc908f23d1304d55d0451a4ac0fc9e7ac8c585e5aff1134c8df042051323915822dc299dcf8ef53a0e6028dcf6cc5684 1c1ddb44ec313d3673f794b7e42d77d43f49d03aa2c0f89b1de5dc97a2fd39a2fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 b2c4b22bf92115676670c11196a31e916f01d0dcf60bf6ce91e1f8f148192a6ef415c561884458cf008504904f53feed98cfa0463765edad72e09a192cff7166 e24b75f0e895f2a6c316162f14db3ffd3f49d03aa2c0f89b1de5dc97a2fd39a2fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 $CDNENCFINISH_ADV2 .ends .model IO_BUF UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 03300390c8e0e4e1a63fb6c35abd08fc9edf8b016234dfbbcaf29dacdad65594fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7c16d8fdefe8a20216c2c03f6156410cac32e7552002b9303ad97694f89baaef24e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c305f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 3a6ca6e84b627c061842952a30c31f6f9b94d181af2d3711697c77ed62661567fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model IO_AND2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 03300390c8e0e4e1a63fb6c35abd08fc9edf8b016234dfbbcaf29dacdad65594fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 70ce328e1544baa368191b1b5d90d31b7d1a0e4ec9c806c3c7d3c00711c8396f2a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c305f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 3a6ca6e84b627c061842952a30c31f6f9b94d181af2d3711697c77ed62661567fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model IO_BG1 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 03300390c8e0e4e1a63fb6c35abd08fc9edf8b016234dfbbcaf29dacdad65594fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7c16d8fdefe8a20216c2c03f6156410c4c7b9433f18509f21d9a6d6f86dcf6b124e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c305f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 3a6ca6e84b627c061842952a30c31f6f9b94d181af2d3711697c77ed62661567fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model IO_BG2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 03300390c8e0e4e1a63fb6c35abd08fc9edf8b016234dfbbcaf29dacdad65594fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7c16d8fdefe8a20216c2c03f6156410ca3831a569fdff270b19918b36f52b13424e2bd4cea498161e47591d70d3fd86ae30d6f2e6e4f354a1642ec356e0c06fc 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c305f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 3a6ca6e84b627c061842952a30c31f6f9b94d181af2d3711697c77ed62661567fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model IO_IBIAS UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 03300390c8e0e4e1a63fb6c35abd08fc9edf8b016234dfbbcaf29dacdad65594fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 2fc8261cdc2e6c5c7af70d72bf057dfc1e99cc8110723cabc6a80a4060cb41b9f79adf6acb26411ebeb53989c261ee484b97bc8a98f9839d005e69c2396241b7 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c305f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 3a6ca6e84b627c061842952a30c31f6f9b94d181af2d3711697c77ed62661567fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model IO_ISNKMIR_3ISRC_1ISNK UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 03300390c8e0e4e1a63fb6c35abd08fc9edf8b016234dfbbcaf29dacdad65594fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 2fc8261cdc2e6c5c7af70d72bf057dfc5510f23cf7ec62afa2dab22cfeac86da210a8a52de34a2597ee4d8e40533bf71fae1e177b0a9bc3027df9dca022abd20 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c305f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 3a6ca6e84b627c061842952a30c31f6f9b94d181af2d3711697c77ed62661567fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 3414cc638be57840b651132ef1b4996bf79adf6acb26411ebeb53989c261ee48cf716078ce2addeca9d8e8ae14eba1843bfb4b6cd8c314e790251ea4d62a9e3d $CDNENCFINISH_ADV2 .model IO_ISNKMIR_1ISRC UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 03300390c8e0e4e1a63fb6c35abd08fc9edf8b016234dfbbcaf29dacdad65594fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 2fc8261cdc2e6c5c7af70d72bf057dfc2809490dfc42ef27187069429d560caff415c561884458cf008504904f53feed98cfa0463765edad72e09a192cff7166 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c305f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 3a6ca6e84b627c061842952a30c31f6f9b94d181af2d3711697c77ed62661567fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 3414cc638be57840b651132ef1b4996bf79adf6acb26411ebeb53989c261ee48cf716078ce2addeca9d8e8ae14eba1843bfb4b6cd8c314e790251ea4d62a9e3d $CDNENCFINISH_ADV2 .model IO_VTHR UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 03300390c8e0e4e1a63fb6c35abd08fc9edf8b016234dfbbcaf29dacdad65594fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 17d6ead946fc736a47552e5b2ad0826598abdfc6b63779097022f58687018c4e2a4d61f129f3f1aa47e4ce5fb6b397e7dd4409d47db0565aa0ea4abfab0b4884 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c305f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 3a6ca6e84b627c061842952a30c31f6f9b94d181af2d3711697c77ed62661567fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .model IO_OPAMP UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 03300390c8e0e4e1a63fb6c35abd08fc9edf8b016234dfbbcaf29dacdad65594fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 db6d7107abe5555dccc5641b42122ed7e266fe731b114b3eed5c42e822c8a18cf79adf6acb26411ebeb53989c261ee484b97bc8a98f9839d005e69c2396241b7 3fe3348308b0d9e04a82b05158a8dd31360da5fdfe7eca659afa58dd4d34a5985f8729dce05eee68cba3dc31bc4dd8bb78d8b5b127f363ddbcfce1cff75761b0 3a6ca6e84b627c061842952a30c31f6f9b94d181af2d3711697c77ed62661567fb1339ea75abd8aeea0db242ce1eb02f2a3f83d6723f1f033a39c8df0a065087 7e2db6e291795577c4465124adfa193a24e2bd4cea498161e47591d70d3fd86a02de041892a07a3d01e500558e3470794707dca6ac01f9dff842bff551fc587d $CDNENCFINISH_ADV2 .subckt AtoD_AL5809 A D DPWR DGND + params: CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 81798e61699ab02189083ab13e6d23497dfcd52a4b4d84cdf20f7579edcf38e23b51b5763dcc20e6b348db7f7e70ed301a0d50912bd5680028d0e5cc53952811 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae 744bbcba15dc700be6ef0aea79492e69a1f3469578550d7b5f1dae20082d4090b06500cfbfacc781f3c08c92b38794095ecf1524da3f993b6bc25eb515f1da11 290012be5be89f16e1cdc618f9274a605f8729dce05eee68cba3dc31bc4dd8bbc424573c3ec4a6cfbbf96c17600396de6ea280a6396fc613630a9aafafb1680e 711ba2718a2b2343d976302afccefd2dc1e1dd74beff1b41e88495a3973b702c1e29afa7599e90be24ea46e70b35c4d67357a6c4ba35fb4d87eda9c0ab7a8a2e e3e3a17636109a425fe6c7a27dc62489893cad2da833545be61c08d3d93359c006c4b5d45c3f16aac9a68eadd870d669cb3848552da990c77406b39ae40745b6 cf1f8e6894087e088372f392652313c8a52f24cbf6f7ec7605ad9a0b675182736252ca3509c725a727537f2ee25377dbfcfe8f61a1fcd852323c3041b6248e02 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BUF D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e108bd2ce1b36e530c38209210a485baa6da1b9b72ca388cf53ca1a7adbf1107dcb5f8e6b858867388cfe005d6aa0e46 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae $CDNENCFINISH_ADV2 .ends .subckt DtoA_AND2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e1783020f9a0485f2656917dda112d07d06d45ccae46cbfe583ac37a97b3fc22e5ff38b993b51594f00bccd0b58e84d3 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG1 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58c9210d1e2cf931321f16a206999813e44f5a77bb6682e2d56e075f38f980888ddcb5f8e6b858867388cfe005d6aa0e46 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58b7267e464f45a71e479aa92874c19093396ad8b94531e00b46fc3b7b8976cec8dcb5f8e6b858867388cfe005d6aa0e46 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae $CDNENCFINISH_ADV2 .ends .subckt DtoA_IBIAS D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee586d6bcfacafaeb99f3870bd828317f4df9e88ab8b0859f60527722dd7922b812982aaa9918b7205797a3bd1b228df369c 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae $CDNENCFINISH_ADV2 .ends .subckt DtoA_ISNKMIR_3ISRC_1ISNK D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58c71791773ccd403672e164171d5ccd6970911c28f3cff4e1bc8abacd4b91d544b5b52e00a33c9d05afc7014e91e6cec2 0a685ea62a2ea3bf5d22932fa810bd655f8729dce05eee68cba3dc31bc4dd8bbc424573c3ec4a6cfbbf96c17600396de6ea280a6396fc613630a9aafafb1680e 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae $CDNENCFINISH_ADV2 .ends .subckt DtoA_ISNKMIR_1ISRC D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5804ed2c4cb41bb4c083460f8ab2ca72806c440ee8d1889ebea6d3133bb2eb55bd800edd7d4058f2ba17167ac0e5fdd33c 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae $CDNENCFINISH_ADV2 .ends .subckt DtoA_VTHR D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5810523ce55cb93b436be2b2d8663ffba4ae78126153a75e5820d8d40750379f20e5ff38b993b51594f00bccd0b58e84d3 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae $CDNENCFINISH_ADV2 .ends .subckt DtoA_OPAMP D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5810523ce55cb93b436be2b2d8663ffba4057524b8e0e12a817eaee5978a8829d3a15170164d501260880cd1999325a86d 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9e7d2cb122878f2cd2966f7800b804d504e6e9deeb933b8116dcb35ad04ae $CDNENCFINISH_ADV2 .ends .model DO_AL5809 doutput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccfba357d479232a29d3d79e344cb27a5386f22461ed57f017a72c0a62c8e03e25af13c382fe111b2893698c399b4a49095 165f20c6fa9cb4dba9b14dfa1689dc99c3df6386a3339466ba48aaf291b85de3c1e1dd74beff1b41e88495a3973b702cff1a65bac0288a0749a44071b2497da0 db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model DIN_BUF dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccfa5d44d5e1e28fc5082900b8f6666a9c23acd88c493494f0c6311e0a3e081e47ca89920f0dd3fef8fc5ecf3e6942ff176 165f20c6fa9cb4dba9b14dfa1689dc9946eddc61fe8ff49b8cbb3037bd55b82cc045592868568662b475d9dae1980a98a89920f0dd3fef8fc5ecf3e6942ff176 56f51c7fef73e3778fc998197e8f059d949c333bb2026d1f782766bd6cc9ce804865802e42a3f8098774232520cf510d82aaa9918b7205797a3bd1b228df369c db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model DIN_AND2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc9956fe1ca62344fd56ae042db09a115f722dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model DIN_BG1 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99a073dc84f6a321402fb74ae451cdaec92dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model DIN_BG2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99730d3ab9cc0f6d4c201888dbdab181792dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model DIN_IBIAS dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccfd5618f378e6a05cb59cdf9fffce17ac188fa77ed59f2f51f0054a3668eccf51ba0dda0b9f0ff7c00075c4cf7d1cea719 165f20c6fa9cb4dba9b14dfa1689dc992bf4a49f2c92bf239b558ae18feabb803a8a3ced46310555395fb71d02bef5bb077118ed39d46ef67ee8796d8f63b5e8 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model DIN_ISNKMIR_3ISRC_1ISNK dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99eb84f847c2f94d62d13318eecd6debb9fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model DIN_ISNKMIR_1ISRC dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99e2be111508fc4b11b46c6cc479bd7970fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model DIN_VTHR dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99ebeab298200f84d4c013ad1974f2850f2dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .model DIN_OPAMP dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 cedf7d6641e7e3cc5273c2363d385a5cb06500cfbfacc781f3c08c92b38794093b56f8729a090bbb435f80557264e49083a27c8c70e0371d709a3c9456eee869 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99eb84f847c2f94d62d13318eecd6debb9fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed db93f3289ea33b10f8d0a1ba761438372a4d61f129f3f1aa47e4ce5fb6b397e7b50d7d840a51f1d3e4f185b24655fc0f2976630906e75837c2ea3152b5a22f17 $CDNENCFINISH_ADV2 .ENDS *---------- AL5815 Spice Model ---------- **$ENCRYPTED_LIB **$INTERFACE .SUBCKT BEHAV_BUF1 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c12124558c38099049143eef993b8e8d59aa8f607e36fad1caaec7e8ee4a95c8c9ab49cb6bb6216e0d0c334056ba35a6daf e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399deef85f835328edeec5aa350c6550aee8d7e8e3a3a6d6f75c321557b9cf7f7cb3 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 1d3b21f0c5cfb1ec3c523f2ab24bba465026061c284de2d0573a5499c69a9fcabee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF1 .SUBCKT BEHAV_BUF2 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c12124558c38099049143eef993b8e8d59aa8f607e36fad1caaec7e8ee4a95c8c9ab49cb6bb6216e0d0c334056ba35a6daf e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d9bac6a24c7058e171cece52de58909ead7e8e3a3a6d6f75c321557b9cf7f7cb3 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 1d3b21f0c5cfb1ec3c523f2ab24bba465026061c284de2d0573a5499c69a9fcabee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF2 .SUBCKT BEHAV_INV A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 5d629801781c626bdb78108f94ac7735124558c38099049143eef993b8e8d59aa8f607e36fad1caaec7e8ee4a95c8c9ab49cb6bb6216e0d0c334056ba35a6daf e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399da4b60d7948d1eb9f457156e4f29b1eb99b3551f9ebac84881d122800d6637202 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 1d3b21f0c5cfb1ec3c523f2ab24bba465026061c284de2d0573a5499c69a9fcabee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 $CDNENCFINISH_ADV2 .ENDS BEHAV_INV .SUBCKT BEHAV_AND2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 7f4d8d07b48671743da119f00e2978a3fc6b74ccb3c944ab337ed0baf91e23f0ad463a57b217a1ce04b69bfbb7a6e0813ff3effe26bb8f6c2c1b5c82b4a6077f e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399dfa4b6293928e86c804b9ddcc7208263bd7e8e3a3a6d6f75c321557b9cf7f7cb3 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 1d3b21f0c5cfb1ec3c523f2ab24bba465026061c284de2d0573a5499c69a9fcabee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 $CDNENCFINISH_ADV2 .ENDS BEHAV_AND2 .SUBCKT BEHAV_AND3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 7f4d8d07b48671743da119f00e2978a3d1790686e076b08693c8ff1dec3e6e8c70d3542cb93be080db380e2d2708d3e25a0d99e261a09323363d4c4b7d35056c e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399da4b60d7948d1eb9f457156e4f29b1eb99b3551f9ebac84881d122800d6637202 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 1d3b21f0c5cfb1ec3c523f2ab24bba465026061c284de2d0573a5499c69a9fcabee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 $CDNENCFINISH_ADV2 .ENDS BEHAV_AND3 .SUBCKT BEHAV_OR2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cdb68bdf439757a0c9a7c1894cf1b55648c8732fd7f98aa88e0dd3534776ff93c 044ecc750a360c43afc194cf53601f2ed487824ccd0b53225aaa56ab9f7974dc63344703506ccd5fb924edc8f3cf505908978c136a73ca70e0fc2473a61715a8 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399da4b60d7948d1eb9f457156e4f29b1eb99b3551f9ebac84881d122800d6637202 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 1d3b21f0c5cfb1ec3c523f2ab24bba465026061c284de2d0573a5499c69a9fcabee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 $CDNENCFINISH_ADV2 .ENDS BEHAV_OR2 .SUBCKT BEHAV_OR3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cdb68bdf439757a0c9a7c1894cf1b55648c8732fd7f98aa88e0dd3534776ff93c 044ecc750a360c43afc194cf53601f2ef705a313234ef2ac69f00207be49bd4fe2e75f02732662a3bab2964381a09c7bf54cab319c4c35867fd226a08bc6a7cf 82b54f9b1c9c2d829e7935df31c32382a33f9e9327a32bf5855623126b64ae7db44e901a4910d4335a040972574e2fcf583a5b904a33e8355a6fa40fcab8b405 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399da4b60d7948d1eb9f457156e4f29b1eb99b3551f9ebac84881d122800d6637202 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 1d3b21f0c5cfb1ec3c523f2ab24bba465026061c284de2d0573a5499c69a9fcabee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 $CDNENCFINISH_ADV2 .ENDS BEHAV_OR3 .SUBCKT BEHAV_NOR3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cd2ee294236473d04ab80823c30c2eba475189bbe04437c3e128683207208874c 4450fddf121883dcd64f79297fed85272ddcf90744eaffa673d4e33266d316a6e4697bcf19702e4526a066b33186371526102d81423512eb4c5b73aece5d80b7 c37c9888bf7841bf8bf6c2eeab40dc31bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 e111c2a7aec3e4088342a6a17f7d3ef107c732bae18662950d6dc717e77f6112092201991fd8b995444e0f8fbe9e1d51d7e8e3a3a6d6f75c321557b9cf7f7cb3 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 1d3b21f0c5cfb1ec3c523f2ab24bba465026061c284de2d0573a5499c69a9fcabee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 $CDNENCFINISH_ADV2 .ENDS BEHAV_NOR3 .SUBCKT BEHAV_BGAP_noLoad1 VDD VSS VBG EN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f481db451d33064b04e74f5e0eb6ef5ca7 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d4c8deb590b880e79f1de2b15de75ecc79b3551f9ebac84881d122800d6637202 d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae4637d518c908083347189a3a93278e6fa 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca367c0caf74e6921c317b5f246074b37f89d1202093f5366b1e2e1a3d9619bdb9 1d3b21f0c5cfb1ec3c523f2ab24bba46820d386f140d99c0afce23ce5081bed98008e35f20cad0ba12003889b2de10d64ec3672b62c4afc9ee9d3e553163c22f $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad1 .SUBCKT BEHAV_BGAP_DEN VDD VSS VBG EN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2e7858dafabf06dd2675764994eeb5a09595c3b3e2cb3a11ae9dda3c8ae7e596 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d4c8deb590b880e79f1de2b15de75ecc79b3551f9ebac84881d122800d6637202 d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae4637d518c908083347189a3a93278e6fa 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca367c0caf74e6921c317b5f246074b37f89d1202093f5366b1e2e1a3d9619bdb9 1d3b21f0c5cfb1ec3c523f2ab24bba46820d386f140d99c0afce23ce5081bed98008e35f20cad0ba12003889b2de10d62786e30c0a7d5acceb868d9feba803d3 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_DEN .SUBCKT BEHAV_BGAP_noLoad2 VDD VSS VBG $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f481db451d33064b04e74f5e0eb6ef5ca7 e111c2a7aec3e4088342a6a17f7d3ef1e24309e7da15e27f1e3f72ae456a0fc5b4971dfc2fe853e809f343de9852afeb9b3551f9ebac84881d122800d6637202 d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae4637d518c908083347189a3a93278e6fa 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca367c0caf74e6921c317b5f246074b37f89d1202093f5366b1e2e1a3d9619bdb9 1d3b21f0c5cfb1ec3c523f2ab24bba46d99732c2f3b0c1aaedcda9f387fb067b3a93452ef821ac1c875af808fe2d74038b6caf53d786247860bb1a1227620c68 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad2 .SUBCKT BEHAV_IBIAS VDD VSS IB $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f481db451d33064b04e74f5e0eb6ef5ca7 e111c2a7aec3e4088342a6a17f7d3ef1a9c0ac848c277c25d5454e9eb4f74e60ddf3b3752d4ccde4d6757bfac80e77572b1807e7b644fe4edea9fe17efb5bd22 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca367c0caf74e6921c317b5f246074b37f89d1202093f5366b1e2e1a3d9619bdb9 82415293653b1eadb1ddc53673e62ed28c0473af8ac1a2284e51ac7db1e54742b9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a 1d3b21f0c5cfb1ec3c523f2ab24bba46d99732c2f3b0c1aaedcda9f387fb067b9b073ef2c7be40ae1644397760f8702c637d518c908083347189a3a93278e6fa $CDNENCFINISH_ADV2 .ENDS BEHAV_IBIAS .SUBCKT BEHAV_ISNKMIR_3ISRC_1ISNK IIN IOUT0 IOUT1 IOUT2 IOUT3 DEN VDD VSS IVDD IVSS $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cf96e974201d8225b9172682f292e439bbf722e72cc8383f24b73fc1038a34e79 18f5312ba1d7284dbef83ccf5f60bb5ffc6b74ccb3c944ab337ed0baf91e23f0ad463a57b217a1ce04b69bfbb7a6e0813ff3effe26bb8f6c2c1b5c82b4a6077f e111c2a7aec3e4088342a6a17f7d3ef16113c426a90ca46c293260f00bd15a058002efc99e19b2c8e764a56aa3a8e6dbc656e6e83c752a3964616d46217c96bc 4b7ae4954cdb84e4074ca0b812afe13d124558c38099049143eef993b8e8d59aa8f607e36fad1caaec7e8ee4a95c8c9ab49cb6bb6216e0d0c334056ba35a6daf 7c80f5d104695480a54673870b66e4b589703a920b6d483b439b85c656b94c4e0d9b34f08631d839eefdc09d9ecb7447615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d20959572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 969146a415d37b3945aa04f72f8849e289703a920b6d483b439b85c656b94c4ef1040e58b42f7c9d11e3a134c11d2f12615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d20959572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 8d8493b82c235c07436c0e798c56d7e989703a920b6d483b439b85c656b94c4e927e455fa372ec9e508fd04c0830a536615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d20959572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 5224515ac5410e9371be888b718e840ae5855dc586ceae448c3588b4fefd9ebdb0518224544d5b72ec86dde1c9143d85615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d20959572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 72b4d86a659952a9a1f8fdc86ddbe01bbe54a185d02368ee960e70b6cd3a1256160a04c39cd3473ab2325a953fd0723d8c824a146fc1e16d0a18cfbd2f121b9b 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8816dc3da02b1684f2cb55defd3b673b12cf2c403b9f1ea1e5a29dc59e7f66cf25 e3b275c5cba4f501e595cb86dfcf4ae46157b12d4aef824874e5f68b206de526160a04c39cd3473ab2325a953fd0723d07370c783180cd39ae1f3b7d99ea9c97 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8867497b19ba7a3009b0a2298bf41fa43f9b4221d2cb5522fb8897bae200a2fff1 ba6ff860da4a7b1953161750ec4bc380f9980d803a453232eb5661593dd28dfd160a04c39cd3473ab2325a953fd0723df25008398479bbc648177d1e74110774 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8867497b19ba7a3009b0a2298bf41fa43f9b4221d2cb5522fb8897bae200a2fff1 004ebda7b3af78c7780c2207d1d7ab0212a483f59273173f893bef85e6ff77a5160a04c39cd3473ab2325a953fd0723d931a0dab4e640dd7ad3e2adce57585f7 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8867497b19ba7a3009b0a2298bf41fa43f9b4221d2cb5522fb8897bae200a2fff1 8d0a0c55ba39eb000d313b782cba47e7946793bf5e169187a8e4537fd2c859587a0f5af16c723d14eee88905eecf025060b2cefa7c13075fe34d9985fa235c0c 27f8915165e8228fb78d4770f8580466572c8dfa2cd67f34b99ee21c614c666cd1c53bab7ad1cfd2ef09200416920ea8c3e15bde1a1b753e73e3a33e8d18e8f4 1d3b21f0c5cfb1ec3c523f2ab24bba4642d2d0b8a2f007170cbdde09be837aaaad50ea1366dae1a426e9c6427cb1976fd2a49d570a465e3680e26dff01fad220 0c3bf6c1c80d969871a3f30ab67c9e8ce4591d4b07f4ec01c960439d1bc97568a90510cb7fd0548e7bd97dc2381c62c36f3de92dea23ece7e70986a7eba91892 2bee72d9a5570f971ec08f12bfcd8f3a1e04b6e79b9e82cf29c7ba026113745d715e15a42dfdaf321c46dc093bf4d9cd3ff3effe26bb8f6c2c1b5c82b4a6077f $CDNENCFINISH_ADV2 .ENDS BEHAV_ISNKMIR_3ISRC_1ISNK .SUBCKT BEHAV_ISNKMIR_1ISRC IIN IOUT DEN VDD VSS IVDD IVSS PARAMS:arGain=45 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cf96e974201d8225b9172682f292e439bbf722e72cc8383f24b73fc1038a34e79 18f5312ba1d7284dbef83ccf5f60bb5ffc6b74ccb3c944ab337ed0baf91e23f0ad463a57b217a1ce04b69bfbb7a6e0813ff3effe26bb8f6c2c1b5c82b4a6077f e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399dc004e5a1ebe91d352539564f862f38f56752eb8c365738466fff5e4ed9575d91 7c80f5d104695480a54673870b66e4b589703a920b6d483b439b85c656b94c4e3e42b7806a35789a89204bdfcd029af4baaeac90cbbd2cde2263ee3c07423ef3 242bad8c74b3e2d12c435f11bcd7b9b5a36522818e99ebc7c691be6164d899ba124558c38099049143eef993b8e8d59abea293fcc024a12599bbe5b725942ec0 0ad2a1e0d1ecb8b410280ca89efac5d715d639115b0fdc208d516f05e711b47b23588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d b4971c49d2ccc6d8e43e930af28614cb1334916c1997def3a9b5d23188a960db3f9e8c274ccca4e93838fdf4ea64f2357abdbff7ec6b86f986bdb09d1bb06f31 3134905bbcd7c34234b51fab8b576d3153b50224970c369aaf0704ab7cb9a5e7b9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a 8d0a0c55ba39eb000d313b782cba47e7946793bf5e169187a8e4537fd2c859587a0f5af16c723d14eee88905eecf025060b2cefa7c13075fe34d9985fa235c0c 27f8915165e8228fb78d4770f8580466572c8dfa2cd67f34b99ee21c614c666cd1c53bab7ad1cfd2ef09200416920ea8c3e15bde1a1b753e73e3a33e8d18e8f4 1d3b21f0c5cfb1ec3c523f2ab24bba4642d2d0b8a2f007170cbdde09be837aaa964b041299fcd545513261b72e77b03b14618c5fb7931aede6dbb61c164661be 22dc2ad01aef37b8f7f601fbf6b5b95c8016524b778b569ae4534cb4bbbf6f38bc9c9aab20b1012dd00e421908f716a5b239bcc5e24f065b63e0a528ca512335 $CDNENCFINISH_ADV2 .ENDS BEHAV_ISNKMIR_1ISRC .SUBCKT BEHAV_COMP_DEN VP VN DEN AVDD AVSS OUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9ddb1d84d0a8f08d2410e01231d7cac3dd8952bb5621ac2d5d3c71212ba90e984119db8a7ec5a41da9de3a58bb13d06f0a9 a81bfefd2faa7a21a7b82c80de8760c86476c1a6094a9980843d2d06b63db1f734477216e2652cc52103b4a5c6291c2e1c17b26ebad409233be5e2bb2a0a10fb 0c9418f49fde4590e8f8d91dee7c0795572c8dfa2cd67f34b99ee21c614c666cd1c53bab7ad1cfd2ef09200416920ea8c3e15bde1a1b753e73e3a33e8d18e8f4 e111c2a7aec3e4088342a6a17f7d3ef1e16a196f94b13893041bc6c353e70c69d6791d362207c859e7858dd5df9738ef81db451d33064b04e74f5e0eb6ef5ca7 d8655c4e2b4ce3f2d2894ef285928da621e4fda21c9a75cd2cce11354f47e45e76a2c8054cd6634999a7daf10ff8967308978c136a73ca70e0fc2473a61715a8 ffd439da980ca9e75915e1ff16fc953d9cfeca020e1e1b9b89e5f50c398cac88168825d1392d3d6e724ce6d2a0f13d269b4221d2cb5522fb8897bae200a2fff1 685f449d8327ac7c103c8a997e84130de59f052cb54e6cd58a26f52025835bcd7ae4889385e121b6194f03967ca43cc2cc532c32af40e07a10794fec0ac97c94 $CDNENCFINISH_ADV2 .ENDS BEHAV_COMP_DEN .SUBCKT BEHAV_VTHR VTHR DEN AVSS DVDD DVSS DOUT PARAMS:arVthr=1.65 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dda7179a2106b30c9e5daa51001a3ee69fd57ee23295e7e52ccdf1a38a6a14ca97606b888de2392d61c12ab26e504f1637 e68feee095d5ebbf714759ae7b074c256a6a2c1d328ccb9d6cf35670b07716948644c5d4c8e4b4799e57072437d0c5f3618d419be787b03bb244c975ba36c182 e111c2a7aec3e4088342a6a17f7d3ef1dcdb46c968c52a57eefb8a648f3c3f4c516347982f3e3dfab680950e9d1c3f52d7e8e3a3a6d6f75c321557b9cf7f7cb3 8b8927e379db18bffabea9367a778b74b390e9e4956466817f909bc05e58fbe2fa054fe3bad623c275295f3cb3910e189b3551f9ebac84881d122800d6637202 3fd0300256e589436344d787a6132768c2eeaa6bdaca18fb721078448c2c9a9223588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR .SUBCKT BEHAV_VTHR_HYST_VCC VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af994395fe0dd2110d302e82c9d57dae81c3e0a 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cd11f580a467b77250a8ce6daf4d1934fd bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a37498350eda0d35b2b23b71a29a754b852 de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e48e560d2101606559c94afafcf1d6fb0fa33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1b9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415ae87d7078c666d31eabb0d8de1bbc290e51a30fcaeb16bceeed5135abab75fdef 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4c6601057589b5a2098249076844f8e3078890c355f3263f4aae381115146eea8e 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe2fa054fe3bad623c275295f3cb3910e189b3551f9ebac84881d122800d6637202 8a148c7e2c90cc798fe030e76f591a69fc6ca8049868753be61d07ac56f1e9052ab4369818381bc7dfc8f232d22745e22bed4ab06630472681c4bbd6abb8d308 $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_VCC .SUBCKT BEHAV_VTHR_HYST_VFAULT VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af994395fe0dd2110d302e82c9d57dae81c3e0a 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cd11f580a467b77250a8ce6daf4d1934fd bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a37498350eda0d35b2b23b71a29a754b852 de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e48e560d2101606559c94afafcf1d6fb0fa33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1b9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415ae87d7078c666d31eabb0d8de1bbc290e51a30fcaeb16bceeed5135abab75fdef 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4c98da52cd0095d34171cbe91aeb71e9b64a24a90d5ff0970d68a25d7bba485a25 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe2fa054fe3bad623c275295f3cb3910e189b3551f9ebac84881d122800d6637202 8a148c7e2c90cc798fe030e76f591a69891a0bbc4553512a1afa0b2e227228432ab4369818381bc7dfc8f232d22745e22bed4ab06630472681c4bbd6abb8d308 $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_VFAULT .SUBCKT BEHAV_VTHR_HYST_TEMP VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af994395fe0dd2110d302e82c9d57dae81c3e0a 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cd11f580a467b77250a8ce6daf4d1934fd bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a37498350eda0d35b2b23b71a29a754b852 de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e48e560d2101606559c94afafcf1d6fb0fa33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1b9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415ae87d7078c666d31eabb0d8de1bbc290e51a30fcaeb16bceeed5135abab75fdef 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4ce3a2fcda99763e8f5feb8466203051ec15d510007c5d86ea88c040db100d518a 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe2fa054fe3bad623c275295f3cb3910e189b3551f9ebac84881d122800d6637202 8a148c7e2c90cc798fe030e76f591a693261320e118c1ecf656c1256caa7211dd2b2654ddcf71970d3ad791b6526020d5bcfeee556056de95e0dded39b69e69c $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_TEMP .SUBCKT BEHAV_TEMP_GEN VDD VSS ILED IOUT TEMP PARAMS:arTheta_j=90 arAmbientTemp=25 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 2fe021ee4920ebc0b15ff7bc901583a1946793bf5e169187a8e4537fd2c859587a0f5af16c723d14eee88905eecf025060b2cefa7c13075fe34d9985fa235c0c f2737d807680651bc4aaee489ce72710946793bf5e169187a8e4537fd2c859587a0f5af16c723d14eee88905eecf025060b2cefa7c13075fe34d9985fa235c0c 20e3127dc65b7b7088269d46b21b6d3df6bf40d9cb7610b3c5551a6968c64ab01755264573daee3863c432284260f0f2f84c4febdf3e829e483d6e47306439e9 c27d03acf02f663db9ba018ec7a6c63908bca835f546932742dafd516544d61f1732065b80b68024a1bba46fc2caacfac93a5252cd67fb4d7d9f8782895f6c72 163c6c82d00fe2c1e829286bb831e6b6946793bf5e169187a8e4537fd2c859587a0f5af16c723d14eee88905eecf025060b2cefa7c13075fe34d9985fa235c0c 0fdfc09ce687efe1350bfb1632a911a6793374ce32df708e3c1f562db7bcd69d23588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d $CDNENCFINISH_ADV2 .ENDS BEHAV_TEMP_GEN .SUBCKT OPAMP_SLEW AVP AVN ENA PWM AVDD AVSS DVDD DVSS VOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9ddb1d84d0a8f08d2410e01231d7cac3dd80cb67ca54386e5c762431757c65d98e1606b888de2392d61c12ab26e504f1637 b37bb30e1d4328b5b13665e742fcb5d0d65eedb57cd472315ba0d271a55f2b2b9d4160c7645f4c0c8c34982bb35bfaf62bed4ab06630472681c4bbd6abb8d308 8cde6e01a4f84ee59858e809083c79d12085c43b8c2037a1981f1ca91878ba99b93f44e00318e3a3b7db66fb4181fc8b4f9d8e3001f0dc42f058e15265ef5bb6 601836f2c6cf73614c0e6409ac4c1cb94c376c5cd64829296332375ec33c872bf6af3aefb3165b566313a634f59385580389c21313f86646b021e9ae621b64bc a2e012f6ec7f535428cdc24a21c0a82ef131ecc4be32b2cd9898af817bcadaebf6af3aefb3165b566313a634f59385580389c21313f86646b021e9ae621b64bc 3ad54d7a4d31de15e280c6f45c4fce6272c1e0c18b3186064133c9d3ba61e9b3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 327553efc10baec99d9927b4623f99d02de2f44147c41760d876d8c12dbe1deff6bf40d9cb7610b3c5551a6968c64ab014d135438318d35f1f49bc2c199398de f6f18544cbcbbf35ea93c54cc05b700879492c73dac52ddaf0022e9e6a0b5ea2b9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a 64890e15247841c63e77f51bae1e2e7399f0b56ee43fc61870400e101d7cf1fe361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d b9af1d4ae47007a9853568c4895394f3e1469475413a167e669ad83926df5deff6af3aefb3165b566313a634f59385580389c21313f86646b021e9ae621b64bc 94d027b174c1013b00f8a4698dfb178a48404ad68c268bef5ae73090d136b35f23588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d 224d7b556ffb1bbacfe5d2ed6193b3c3f6eed027b2d03d385b1f093adcb8c05d23588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d 68911a8b7526ae5fd35116eb69d2844f5f1643c14e02ef9bd153a39d7db89bb1b9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a 0dcbada07dcada0540e2dc1911a5c4a318de7239899f2d708e17eb2d98ab9ef0361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 685f449d8327ac7c103c8a997e84130de10b3306bb8c0894f3590e06cb7af52f23588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d $CDNENCFINISH_ADV2 .ENDS OPAMP_SLEW .SUBCKT BEHAV_REFSYS_FUSE VDD VSS SEL_5PIN_EN SEL_5PIN_VF SEL_8PIN_EN AWAKE PARAMS:ar5PinEn=0 ar5PinVf=0 ar8PinEn=0 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd8598ba0f60b3ca4f8a0b372f0d8906feb71bc76e5d2c01eaf5b3ed4df3244a7b7ded9478fa08d4bdfea2bf26d936d4dc e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399da4b60d7948d1eb9f457156e4f29b1eb99b3551f9ebac84881d122800d6637202 2e73eb78f44c807e6d882a20fa8f77d7b9a874b3055e308c412c7f3aac1fdcb057f4f911dd9e5fba9a1c3e5ebe9938240eb47de729f2e11da9c37e011a8902f6 617bc50d9322ae7fa644cef00833126ab9a874b3055e308c412c7f3aac1fdcb0d7013f68d86f68e9c9af029a2f8c60530eb47de729f2e11da9c37e011a8902f6 1471b79070b4eab8b92f0fe620451818b9a874b3055e308c412c7f3aac1fdcb0a711213d5d055c9d722b9f124dd2b00b0eb47de729f2e11da9c37e011a8902f6 $CDNENCFINISH_ADV2 .ENDS BEHAV_REFSYS_FUSE .SUBCKT TOP_AL5814 VCC_PAD VSS SET_FAULT_PAD REF_PAD V_SET_PAD FB_PAD EN_PAD V_FAULT_PAD OUT_PAD + PARAMS:TjaVar=90 TaVar=25 Sel5PinEnVar=0 Sel5PinVfVar=0 Sel8PinEnVar=0 * INTERNAL REFERENCE VOLTAGES $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 b13c86a1d5059658fef20b8e384b5efcdb732e27c22e7601ed95da461e7abd76bee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 0cd33ae9a95b52968343defb8d5ef19208638362910ed8532a56c14fcda3bf60283f6d7f7713e141dbbbf9eee3ac29c1b0860e0a8540cf73f3da068e1b28d830 16cca5b342db76d24f19228eda5f625108f6e302e117c4f41d406fe0a73d33e1b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 3f913966a0d36b6856d2464b8a408be1e5e0e45a6b921954bb7f23c91267620cd11b8f69441a17c2fccbe3e491c105c151c493d187bf6493ef08a18564366285 65f8c71b66fd5d6fe2c389223dd91db58409cabb8fe2c9a015ea16bd970745e4e1b5e475a90deac352423dc14c92d31751c493d187bf6493ef08a18564366285 50a6dbb18bc75342861f2e6941ab0333f9bc25da93253167732402fd86b5d7e7259653a376bb4ae509e5a421417a18f1b08ede5b47ea25b4e191a5f6b4fbab4f 44182f4277d17cfee56e817e04f550da13a7652a5d002c6bbfb75b0fd7ec7ee4577ddbf3cb1a8e0296f7bea265b70ca10245b0daf5dd26441522378c7bfda65d 6ed9acac35d64189a592788897b1f1ac4603d105f6ebffa9909f152e41007edbc47476de1ab9a932eda5bf339bc421bc5bcfeee556056de95e0dded39b69e69c 40e2937d76cdfbb1e40f79ddf41bc9321b08281f818ac462ce99f8a7799dec6b572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b f79c10d351ea31a920ad08bd44970ec51868aa08c4987d9b5301683d628addd8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 37560ffc8a897158de79e5523f0d4f94cf61f90e74f77398db44c0a6b058c8540cbf39fee1642bb468fe52dcb5f8607970ab029ed563a3809cb692ff9af63337 16aa81c8110b982d3dcf40612b65e9e9a33f9e9327a32bf5855623126b64ae7db44e901a4910d4335a040972574e2fcf583a5b904a33e8355a6fa40fcab8b405 8a8f3f4ba7405cc668ba14ff96f598a201f16f3715f27e465039a5fbd360df848f74bcd9ec9c9fa57d79ea58f2ad59d2d7e8e3a3a6d6f75c321557b9cf7f7cb3 d39848fbda05a05e7ac42c8c248403f04dd697483072ecc8d2995da8c5ebdd0e476af57a35646cd1c39e141c101d955b08978c136a73ca70e0fc2473a61715a8 4e44da540303161f2e39c4ff87237556f44260e3647cda7856a0447edef42c220d2d5b47293f431a70cba8d714dc6472468227db2f5f7bc6506f6faa3df52bd7 4d33869ccdef1f2d69c91044b452eaed5209411427d62e7cb47b37aa3183240903245222455d075843a0213491958d4ed2eade8c8fb87af6a7933c04b6d8af74 75b42c20f4f98171c3ed339b4addc782a9d6e9035cfd407c4463503b2034423db71ab13ca8fa9475ccc4fff99f9be44079cd67da21e8db9770cbe5b09ceed842 b9539a448712a87bf0ab0bddf2fda720af37121594ae9defbe6b463b178d1768cd854d6054ee39a3295ff6448ed7795c51a30fcaeb16bceeed5135abab75fdef e77f18bf66c31ec52cf66c43bd736a58d0b9f7d394ee5ed0c9f4293d64aebdb2daf4a8fea2e283f41764e993bbbdd303c821e4688a22abc1b6fca28fd22369b0 407047534e3c18da2af653044a77c1700a685ea62a2ea3bf5d22932fa810bd65572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 62f125d631c09b20ccd6a4195be4c3875a9fd0867e7edcaaedc3d9a95d0e7d8df62e61d699928f709e4555942b89a81d95f28468b035197b1e0bdc468491e9d5 121f97ffd99f439de4eba6763e94b4f90e6bc26aff93d323dc69ffffa0146ac9e95206445c4e6cbccef0e9d769a8f30d89d1202093f5366b1e2e1a3d9619bdb9 af0295eb3fa98d83e17dbf52b4b2ac8dbe2479d50b1aa9a2def9a0f86cfa8bf83c445be4921629a7706c463159d4759978b5e762bde405dd5ecaba36d1d4044c 406257312aa2590a67043d3a4a849acbfadc44e95b6a0016e7790ae757b460269617e95e9cdd7cdd9c1edaad5fa731b8618d419be787b03bb244c975ba36c182 973fbb817a5c6b18d4dcfc6399d5d8119924321a1487fb3a11fd8a03ee93cb2b07b022e9bef271fefe92748f26d6f70051a30fcaeb16bceeed5135abab75fdef 4029b17456d1fa296b1302c0a941f85ddf0312452ebe46b8172156122ec3b985572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 12f0f2801b9608d3c1f0cc4b9fc325bbf093a625bf11d6b68269ade5536e020ae1469475413a167e669ad83926df5def89d1202093f5366b1e2e1a3d9619bdb9 0dc43a8702af797df3b51560d88ca73ba2c0fa271927edc9029b58138022458355cb13929e15668d17e76d0a31eec26851c493d187bf6493ef08a18564366285 d4193cf59edfca856ab9cc068ca3a6947d4cd7ff73402c2c946035eaf0d454b1a7092fcfb4122b1b6ad67b53c6ecdca52b1807e7b644fe4edea9fe17efb5bd22 bffc25fc793ca80dcff62c91f4f16ed8bcd0327f37297c751925f9b8550be3e4001694d2451c576e337d589f9f9d15c86fe0b517159d859082c7d2de9540f75b bb9b30a7a1910269b258c3612cc70dcff6bf40d9cb7610b3c5551a6968c64ab01755264573daee3863c432284260f0f2f84c4febdf3e829e483d6e47306439e9 83136f93efef522786c7c17d1910412245973e95febaec2e13b1e630876e43c567592b20887d4f2ab3f21c0a1b43ea8d637d518c908083347189a3a93278e6fa 546da40a20d02325d07b0754f13d25a9de586abead0c91b5c5ebc75d334dfbb9e79f6869976a40b12ec1e5d81a4433a95372c453ef93471c4734032055bb0962 71df45151ea0dfa33bfb90c26f0d93c5466fc5a980f6a28f4bc61a087437ffc2116512f4fff8a249731fd1b9bee739970e4d6bcf7c75390c04ea01d634905738 33a4d8236d5fea6cb3dfb670540e2738a7fdcb44547c3bf3874abbc95a30aeb6f3de955b2f6966a8315b8a43c0355d62ef27089e0532fba7810d6dec34c4e687 2f9313824791ebfe1fd87050d435d75cb71ab13ca8fa9475ccc4fff99f9be440b3fd54acd4183b9719d310d45577864966f8eaa71d4e4d56351cc563a6765fc9 b5272af1ae54c2b3a9c28f23653599cd0b94b9b0879ae9b234c12616bf619f556d2485b412b6d2b33b192eebe3ab90005bcfeee556056de95e0dded39b69e69c e9530056431a065d090c465d74758654968d3a0ab5502ba3fc18768aaa7b70ce984b0ed9ac790268a9f5053ef09e361f3d0e9cbcd3a004a9e256e75843b64421 78eb37bd10671d445e1b54f355651282124558c38099049143eef993b8e8d59aa8f607e36fad1caaec7e8ee4a95c8c9ab49cb6bb6216e0d0c334056ba35a6daf 5fe37d3b00c548500861e70c6ab96fe60cbfac9427bd06e393577917a5a92609fd2f12ee88ab621abc45b6e6d0d25dc5c492c6c8aa45845a1660d0d04a012644 688a116e56bac7bc82a1adb1b8ac7f686d66535b717a58059aeeb8e949455b837b51fcf4664e216e1c79ec1ad95bbd9508978c136a73ca70e0fc2473a61715a8 eabcb037c2adc3e621b71c241baf2d66d4f969c9cee8ffabf926190d3d5c3239fac83f1184e3a82f4e1da1618fbf7e894ba184767b04da735a2601f4835169f3 6d363e3278ff62969287c9da8b69dfdfde8a2dc48b1a7d3f69bdcd064275706d8281076424d3530b4b7ffb1c655e0ff0a71e69027522123ca7470a731eda47d2 9a7b47f95f9990bfd881d2e18986b07bc90fb6ccd1c4f70299c342417c3de55423588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d f0de08da966d40726b72a7c0d085115981a9de3d33e38b0f58d3c0505119aa517a693b3f98696629a08dc9268533f6b2a7ca243f12f134967ca40de54d065038 75a9b963246ba8915e018a64ce49af26747137aeca3cc3518d52aae389e69343e86da5703134e41a0f22498d7f143d1951c493d187bf6493ef08a18564366285 6f95d0f096c335935f5b8a6cf8711a959e2929502fb257bfba253c4c9420343ac5cdaa627d5925a09805c73928c7b52cebb0a0c23ea29c78bed2ed8b8b8ce921 1a70135b64229bfb302c0680dcab350f0c1fe12af36086be1745e17adc48bfda361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d 8875eeaa02a878028b5d6c4d0eb20527f6afd0d4096d8febca4802c1f9668f67124558c38099049143eef993b8e8d59abea293fcc024a12599bbe5b725942ec0 c0fd8f1b24fa26485a3a8f5cb680e66e3c099a099b49ad758216875a6b6c3d0d037e1f993663bb22839a9adf54d88e2b6842df877f121aff1345410791d9f551 07bb7c8ded7669ba0bb66fabcaaceccd5a55f04b7bfe2f4e67d41a5b71952809c40cdd98131bf63b5fe4d3f7f793f88ae6b845667d95ffecade32a681aab647f 430f50b4bc452a5199c15c4058a6cd5d0eeae7cf2b07a4a425199084dd49dc1da33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 ee7618e90b475f2fa36c0df1ceb2f3bb2ae03b642ca14814e09501d200b822299bf7961e84119b3911d7d51d588935dae100b1eec337f2e4c0a14938105851d9 13499fcd54c56c4528200433024b186c946793bf5e169187a8e4537fd2c859587a0f5af16c723d14eee88905eecf025060b2cefa7c13075fe34d9985fa235c0c 1be332166e547eee18a9abe56c4f0343ed9fd8075e2eee5543747c3318eb2a33b71ab13ca8fa9475ccc4fff99f9be44079cd67da21e8db9770cbe5b09ceed842 92a2db20fb29f65023a80c7ec478c3d1fe50b069c7dfeffaedec8cf7a2485e4df6bf40d9cb7610b3c5551a6968c64ab014d135438318d35f1f49bc2c199398de 94e55319aed85665e668d2c65b60993df93c472d2ced5f2f8e9967ef3dbae717361a09ce5116a1165b6ac70a789011be7a9aac201a53dfccef378d8f7ec1590d $CDNENCFINISH_ADV2 .ENDS TOP_AL5814 .SUBCKT AL5815 VCC_PAD VSS FB_PAD ENB_PAD OUT_PAD PARAMS:Tja=90 Ta=25 Sel5PinEn=0 Sel5PinVf=0 Sel8PinEn=0 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 498c281ccb083b0c0e55cf0230437a75420d1149c3e0ccaefce68dbb31530fa4d539947cbac2ee91dea2843de03810ff07c149acb36a0c82a57f92d59795c1d5 931eb4cbf6548565c600dcbbd48980b1e765f8a481fb254e0602a97963660b0dcc2499e9bff044ceaa0059f060bb578bb42ebcf5416f3dd2956eb64ec3fcd65d 8c51d4750ecd55088423eecd03cb93424603875f675a5f5451e4da05dbb2d1587552b98b333bb3f20bf355c626b5e067e6a05fb627c4b37026ef6e961b9500f4 88d6cb2c3b70f484375cd571af15763fb9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f 11f315fcb28e0535d5ee304d59fd0103999bb2dfeb302211717ed9a8c0082195572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 16629dd40c434d81937539d504c81e9672c1e0c18b3186064133c9d3ba61e9b3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 14af3039ad682c28c791944b5d8aeaa0209b8baad5240aa0ff95e468bbc742f467503ce8ce8ba33fc1c6eb8a8bf6c2486c31d57c9c8dc628c3dfccac13879a64 74a49953508548e27f44e61bfd774a9472c1e0c18b3186064133c9d3ba61e9b3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 066154e35611375de41ff12f9d9afb974c282f5e90e428cf94526e72840c715a283f6d7f7713e141dbbbf9eee3ac29c1b0860e0a8540cf73f3da068e1b28d830 2a5f17c78f268b1a2840dee30ed2a3fa72c1e0c18b3186064133c9d3ba61e9b3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 440b27681ce3b1c6da10e09a959d13688788059d0249d3c25848996a3456b4f8466fc5a980f6a28f4bc61a087437ffc235c821b54a4090373d98bf612f47a929 9044f2ace17729c28156f81fa3d4c6f48d73009e8199f146d89d89b8860e6bfa572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 97dd084e6c068cbf65789583f7a57e3c72c1e0c18b3186064133c9d3ba61e9b3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 3b49fb5f8dc29202c89753ccf8c2fdcb4b8440e5d772898d41aaffcad02cc848b9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a 758668214ee91bd34efdb62258804fe58700371fa89f3624e86be50808d887c3e10f796530b721c64c4e3786624f6c0c8f5c05e6f6e40048d9065fc55a2a2874 0fb73c3fe943e8b4692b8e1f75499c6af6bf40d9cb7610b3c5551a6968c64ab01755264573daee3863c432284260f0f2f84c4febdf3e829e483d6e47306439e9 7114bfeac982282d320add93945cce45bafcc01c8b57a8bf88f65322c704a08ab8c0fd607b9a2fe4120d9ce0ab50c9a73ff3effe26bb8f6c2c1b5c82b4a6077f 3e0ead198e425e3a51f56806b2774f26ae0884eab6406406edea7ed939001cc1a33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 d7888ab1c595ca0f15778ad6d15b66b58700371fa89f3624e86be50808d887c3e10f796530b721c64c4e3786624f6c0c8f5c05e6f6e40048d9065fc55a2a2874 44db56b0f63fc16080a61c0273f8d4bd67503ce8ce8ba33fc1c6eb8a8bf6c248494731b9b1ce2154e935ce09ec72591a86158ff39c53b14476dc0b6b30ddc7b3 2eb7dbcc1e30467782c82bcbec1051de6aa3acfc3c73c3e5835447060ecf4c99946793bf5e169187a8e4537fd2c859582767391a8d7529679c896e31de2225cf d626c05c9b7c05e5275645816d40a3ccb9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f 57f1bd03a6af5ad14513142d5c06de4472c1e0c18b3186064133c9d3ba61e9b3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 7a7c3df3a3f195fde9d999bedfec05fd946793bf5e169187a8e4537fd2c859587a0f5af16c723d14eee88905eecf025060b2cefa7c13075fe34d9985fa235c0c 365df52ae3a7aa16df0aec200f37f6788788059d0249d3c25848996a3456b4f8466fc5a980f6a28f4bc61a087437ffc235c821b54a4090373d98bf612f47a929 29820dd5a67b382bd0bbc4d6262b6f69946793bf5e169187a8e4537fd2c859587a0f5af16c723d14eee88905eecf025060b2cefa7c13075fe34d9985fa235c0c 5a29595f94a30dd8e0dd33d518e03e28094aa781e0ecfc5c646145577d5afc2db71ab13ca8fa9475ccc4fff99f9be44079cd67da21e8db9770cbe5b09ceed842 a5561e9abd897d6df2e418bc07c7c4d7e95206445c4e6cbccef0e9d769a8f30df6af3aefb3165b566313a634f59385580389c21313f86646b021e9ae621b64bc 3fe1ffd451565058a87327377ae6248a8700371fa89f3624e86be50808d887c3e10f796530b721c64c4e3786624f6c0c8f5c05e6f6e40048d9065fc55a2a2874 b701ccb42d43c16baae8217fd507bf4067503ce8ce8ba33fc1c6eb8a8bf6c248494731b9b1ce2154e935ce09ec72591a86158ff39c53b14476dc0b6b30ddc7b3 $CDNENCFINISH_ADV2 .ENDS AL5815 .MODEL BCP56 NPN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b d4cbe0c62df2cad59b1e45988cdeda4ed74526f928c00affa90f5cef74d33eadf131ecc4be32b2cd9898af817bcadaeb89d1202093f5366b1e2e1a3d9619bdb9 86e6718ce693d8aa4fde7eb7526604ff2772300722753ccc2a262abba17cf856ccd531611823001552af23d374258f84462ea5e1555e7139dc2d377558adb125 3ea3db14bcf19e5cc52be965a744e11a8e5e53ef04da41eeaf87af327c2da1c6eb9066ac6e792bb624b9ec4020804bdc76d9285d79f6b98bd435d78c4c2c0d7e bba02babd62bd845edf32fef31e16069b891ab108120e4368828f42d2a8e57d985525b57f6e09d7f6a0f9c8c706ca91ab9c230501e4fdbcf23b8574b43d1d3a8 4b18924fbd82417a81af9cc8776c5627f2004de1fe3328183acb99c3201c1f013a88dba75b4138cddca669839f0e739993facf4886dec637969352a2c936ebf0 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL MLOAD NMOS $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 7eeb9c0ed81c009e5c85f2d161da370fdbb34d93fe1e0d2465d31b0f370b0b06572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 670a7dc18237996c9cfe8aefcc5690b04dc969708a01a4695596ffa977062972a33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 $CDNENCFINISH_ADV2 .SUBCKT LED_8V IN OUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 964ecaeb5607f1ba9295b40ec73e968ab71ab13ca8fa9475ccc4fff99f9be440b3fd54acd4183b9719d310d45577864966f8eaa71d4e4d56351cc563a6765fc9 5e1604529d7f2a48d2f1e70629fcc1d7b9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f e1241ce8881172a9f81c62a19ce60a4eb9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f 5467c2851c36ebe3acca1ee2ef9e5eb3b9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f 8ea6b42e4b19785afaa0cf44390f272fb9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f eaea13824faab259b3b241d9d14e12b1b9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f 9818535d7895627e0f17af07a1d19421b9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f 2a7a7dadfc0175ff1142924801ee5f3db9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f 53411dfc14d4f3cabdc66726f7b565c3b9c9c601e59acb8a6c14d5107c3650c759944d842090a02c44e8b3022833b147d42346455d8ac112f34eadf8a92b553f 0789104cd463aba4c524aad5c18530b8361a09ce5116a1165b6ac70a789011be3817ff1ce951918215fbe44944e54237a74f96c6963b27cd9bb47da33a7b531a 5c8e61db545938b8fffc53e8e3705d6ce76bb6ce1c8576379b6fd6a6544cd035f6af3aefb3165b566313a634f59385580389c21313f86646b021e9ae621b64bc 781b70ff966d271b52c7201aa01ffeb9420d8605cc1eabb7afd885f2147a3995a33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 $CDNENCFINISH_ADV2 .ENDS .model Sen VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b c9b0641a35c857bb3789b3e21ebc4df1d77fbdcddab7f58096d4d73a674dadcabee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 f8730028c5d3490486715d64987d57a79daf6b2bebe3eaf7897c428cbd3fdf96a33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model Smod VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 56cdf838d91a1828b2f10df2f5693def69915a15a2cc1a4874428446935e1be7466fc5a980f6a28f4bc61a087437ffc235c821b54a4090373d98bf612f47a929 97e1b4d74bd0d8fcd286ca8d480bb8823bc35819afd90aedb19e255d32629e90a33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model Sout VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 37626a38a57a7f38a80219a57bdb7343e03dcf973e78456f37ea5a0e6e626d2bb005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 5f08a29b23de343e5cf4e03543971a453bc35819afd90aedb19e255d32629e90a33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model Spd1 VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 23bd934d75f2e52fa087b3879c1efcdee03dcf973e78456f37ea5a0e6e626d2bb005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 5f08a29b23de343e5cf4e03543971a453bc35819afd90aedb19e255d32629e90a33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model Spd2 VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 65f81053bf4be1a9de744cea9bf3c23269915a15a2cc1a4874428446935e1be7466fc5a980f6a28f4bc61a087437ffc235c821b54a4090373d98bf612f47a929 5f08a29b23de343e5cf4e03543971a453bc35819afd90aedb19e255d32629e90a33f9e9327a32bf5855623126b64ae7d22b34d4db4ed9ccad73350475cc66664 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model Dsimple d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 8ac03806a6d6f724c8473bdd52339dce946793bf5e169187a8e4537fd2c859587a0f5af16c723d14eee88905eecf025060b2cefa7c13075fe34d9985fa235c0c 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model D74 d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 75460640a3186b4ff39d254f7527cdf7b56870c0eb97140a206e3084eaafcdfb124558c38099049143eef993b8e8d59abea293fcc024a12599bbe5b725942ec0 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model D74CLMP d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 646799414338b0c9354194d5b70aa7a6d7819af69707422c8d5cffeacdc4c77c283f6d7f7713e141dbbbf9eee3ac29c1b0860e0a8540cf73f3da068e1b28d830 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model Q74 npn $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 24ffa71e874d149a10b2c92ba5c8716dd3eb9337bc6ae306a7450535e6dc7bd0b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 746924b950a2bc290a4e53b0267d84b8b71ab13ca8fa9475ccc4fff99f9be440b3fd54acd4183b9719d310d45577864966f8eaa71d4e4d56351cc563a6765fc9 cfe965f35139ba298051e2d8f8f3da6c7ad233bb4b43b1d1aa0c8377ec4f20debee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 0eef750c1b08bc7410ebe4be9da9754f53af0385c63726051e9756ef56e73590bee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 e775ad024035b735dcbc5ed1857829e89f192405d943c5843fdd82e0703db2f323588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d 811290e6cbf6784ed54a134aac29accff5617d72054c724f50f19223947855acbee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 b2ba60de915f7a79394f2e6b45f68e6ea46b80b181e027a99d415717619392c323588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d efe68e5febac8dabb5bfd782b5d9d7b8361a09ce5116a1165b6ac70a789011be3817ff1ce951918215fbe44944e54237a74f96c6963b27cd9bb47da33a7b531a 2868a5cdbde33f2a76ef2e83959cb48c283f6d7f7713e141dbbbf9eee3ac29c16bd0f24a3b0559292e7fdce43fbc05bc0541404f86c982fa6581bd404e92a8ea 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .MODEL T_BUF UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 5c86f151d4ee09f78a948d77285e7226a33f9e9327a32bf5855623126b64ae7db44e901a4910d4335a040972574e2fcf583a5b904a33e8355a6fa40fcab8b405 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef5215033a3aebe681d76d47c92950e83c4663e51a30fcaeb16bceeed5135abab75fdef 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c211133a3aebe681d76d47c92950e83c4663e51a30fcaeb16bceeed5135abab75fdef f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_BUF1 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 5c86f151d4ee09f78a948d77285e7226a33f9e9327a32bf5855623126b64ae7db44e901a4910d4335a040972574e2fcf583a5b904a33e8355a6fa40fcab8b405 2c59efc8237a0898d382be2ede8701a595041c97a76684e910beaf2f6a1c0d8926ea52a8065eed569c0bcb4e29069f262b1807e7b644fe4edea9fe17efb5bd22 1411fc0582296e9e4300da8fa2d82e92f16beaa3c636f4024c334542a7664b07d6f73a6a2d14b728ac8c23004fd379e981db451d33064b04e74f5e0eb6ef5ca7 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_BUF2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 5c86f151d4ee09f78a948d77285e7226a33f9e9327a32bf5855623126b64ae7db44e901a4910d4335a040972574e2fcf583a5b904a33e8355a6fa40fcab8b405 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b35a11a46a8713ac3b48a1a125c47f22aa08978c136a73ca70e0fc2473a61715a8 e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c0275a11a46a8713ac3b48a1a125c47f22aa08978c136a73ca70e0fc2473a61715a8 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_NOR3 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b35a11a46a8713ac3b48a1a125c47f22aa08978c136a73ca70e0fc2473a61715a8 e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c0275a11a46a8713ac3b48a1a125c47f22aa08978c136a73ca70e0fc2473a61715a8 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_BG2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b e6111e304b7b0483e1347fd711c855ce7314896fe405611ac89677aadd176d9516d02a88396487957ff0b52bf0d16e7108978c136a73ca70e0fc2473a61715a8 77582d186faf9f922f6138d14bee2b5d53aab8ccaf3361b70732a55a922f27d616d02a88396487957ff0b52bf0d16e7108978c136a73ca70e0fc2473a61715a8 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_IBIAS UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 9c64b132a42898a08d0377db7bd4576c3ec70c319b72b2d6ed30dceec9b35d7ca4f224b499ec9bfd2c2bec0523f22c7d08978c136a73ca70e0fc2473a61715a8 62d2d1cfaa8d3bd5e0cfaa3a71c0a2e17a3a3600ec8bb118d56f460889a45a63a4f224b499ec9bfd2c2bec0523f22c7d08978c136a73ca70e0fc2473a61715a8 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_ISNKMIR_3ISRC_1ISNK UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b f0faa082395d5e3eeb8fe11e07469b9f948d4612f5ff8d9681828a6fb42bbfa5ad3f0331f5dd0dc6f48a116724bd72d9d7e8e3a3a6d6f75c321557b9cf7f7cb3 dc9c49c59370aed9c937040175edd0c235fef9707227ce615b983b6c718615ffad3f0331f5dd0dc6f48a116724bd72d9d7e8e3a3a6d6f75c321557b9cf7f7cb3 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_COMP_DEN UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b cc968e09d3f08b09bf3213b351baa16a6fd7ee29bdaad8d615b26b479866375009aa95c1d98d666c0fb6102e2d9e76b1d7e8e3a3a6d6f75c321557b9cf7f7cb3 5edc4278cf942a1dc268dbff37b837cf3dea5cde435a702813f859224a446ddd09aa95c1d98d666c0fb6102e2d9e76b1d7e8e3a3a6d6f75c321557b9cf7f7cb3 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_VTHR UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b35a11a46a8713ac3b48a1a125c47f22aa08978c136a73ca70e0fc2473a61715a8 e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c0275a11a46a8713ac3b48a1a125c47f22aa08978c136a73ca70e0fc2473a61715a8 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_VCC UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b f73c26f36e898e81de2893d9ff7a8aa96af3cd573a9290181dbd4af508e14fe58db688de76d55a8686c2936588fb5f002b1807e7b644fe4edea9fe17efb5bd22 7aa3578626ed56763645cbc0caf4e54e9930d2c3c4f516f9ff61607bfee470270d6ab3dcea2246fa1faba759ad8dcd0f2b1807e7b644fe4edea9fe17efb5bd22 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_VFAULT UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 4a0bc5fdba9f65b841c32da58b20cbe66a507b4839199c775889817a20825d16fa4ec7f5e4687c31df825b3d2f7980c151a30fcaeb16bceeed5135abab75fdef 1aa05dfabd8cc1863c46f52d29dd985b98e19709b0f06018e259ad803e50ac88fa4ec7f5e4687c31df825b3d2f7980c151a30fcaeb16bceeed5135abab75fdef f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_TEMP UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b35a11a46a8713ac3b48a1a125c47f22aa08978c136a73ca70e0fc2473a61715a8 e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c0275a11a46a8713ac3b48a1a125c47f22aa08978c136a73ca70e0fc2473a61715a8 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_ISNKMIR UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 4a0bc5fdba9f65b841c32da58b20cbe66a507b4839199c775889817a20825d16fa4ec7f5e4687c31df825b3d2f7980c151a30fcaeb16bceeed5135abab75fdef 1aa05dfabd8cc1863c46f52d29dd985b98e19709b0f06018e259ad803e50ac88fa4ec7f5e4687c31df825b3d2f7980c151a30fcaeb16bceeed5135abab75fdef f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_SRFF UGFF $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 65d36f6542c7047860f7993459a746aa6a7e0b9139dbee8b5eef1fc0ac7176be42f0924e69e98f57c8171fe8572098e0d7e8e3a3a6d6f75c321557b9cf7f7cb3 a4d398c7d8b82997fc8228d98eaa2bbb1fda409fdfcc8182cefbdf39b9213e44223bc4ddac4614b79ff1091a04abb2e2d7e8e3a3a6d6f75c321557b9cf7f7cb3 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_AND2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 5c86f151d4ee09f78a948d77285e7226a33f9e9327a32bf5855623126b64ae7db44e901a4910d4335a040972574e2fcf583a5b904a33e8355a6fa40fcab8b405 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef5215033a3aebe681d76d47c92950e83c4663e51a30fcaeb16bceeed5135abab75fdef 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c211133a3aebe681d76d47c92950e83c4663e51a30fcaeb16bceeed5135abab75fdef f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .MODEL T_OR2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef5215033a3aebe681d76d47c92950e83c4663e51a30fcaeb16bceeed5135abab75fdef 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c211133a3aebe681d76d47c92950e83c4663e51a30fcaeb16bceeed5135abab75fdef f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .subckt DIGIFPWR AGND + optional: DPWR=$G_DPWR DGND=$G_DGND + params: VOLTAGE=1.0v REFERENCE=0v * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 70377785674f05234daf157ce38e73dacc908f23d1304d55d0451a4ac0fc9e7a946793bf5e169187a8e4537fd2c859582767391a8d7529679c896e31de2225cf 1c1ddb44ec313d3673f794b7e42d77d4fde06ede05c862b1d8736de91834d965b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 b2c4b22bf92115676670c11196a31e916f01d0dcf60bf6ce91e1f8f148192a6ef6bf40d9cb7610b3c5551a6968c64ab014d135438318d35f1f49bc2c199398de e24b75f0e895f2a6c316162f14db3ffdfde06ede05c862b1d8736de91834d965b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 $CDNENCFINISH_ADV2 .ends .model IO_BUF UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 03300390c8e0e4e1a63fb6c35abd08fcdfa32769e70d0a6beaa27b1bb86b05d8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 7c16d8fdefe8a20216c2c03f6156410cb660c91c499a9c1d9c70941ac99dc843bee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 3a6ca6e84b627c061842952a30c31f6fc9d8fd674ba1ccbcbf25a9ae402815d3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model IO_AND2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 03300390c8e0e4e1a63fb6c35abd08fcdfa32769e70d0a6beaa27b1bb86b05d8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 70ce328e1544baa368191b1b5d90d31b06cf481d18832179a9872a378fa443ee23588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 3a6ca6e84b627c061842952a30c31f6fc9d8fd674ba1ccbcbf25a9ae402815d3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model IO_BG1 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 03300390c8e0e4e1a63fb6c35abd08fcdfa32769e70d0a6beaa27b1bb86b05d8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 7c16d8fdefe8a20216c2c03f6156410cc607f2f455ae3080e0eff80ba090399abee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 3a6ca6e84b627c061842952a30c31f6fc9d8fd674ba1ccbcbf25a9ae402815d3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model IO_BG2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 03300390c8e0e4e1a63fb6c35abd08fcdfa32769e70d0a6beaa27b1bb86b05d8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 7c16d8fdefe8a20216c2c03f6156410c81f4341f98f7af62ffd1974ca6958393bee6c75e8adbd814f5675d0ca9d2b593663e0acab12664d81bffc57f13ec0ff0 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 3a6ca6e84b627c061842952a30c31f6fc9d8fd674ba1ccbcbf25a9ae402815d3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model IO_IBIAS UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 03300390c8e0e4e1a63fb6c35abd08fcdfa32769e70d0a6beaa27b1bb86b05d8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 2fc8261cdc2e6c5c7af70d72bf057dfc6288ab6c20e773eff6d64e653e0ee400466fc5a980f6a28f4bc61a087437ffc235c821b54a4090373d98bf612f47a929 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 3a6ca6e84b627c061842952a30c31f6fc9d8fd674ba1ccbcbf25a9ae402815d3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model IO_ISNKMIR_3ISRC_1ISNK UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 03300390c8e0e4e1a63fb6c35abd08fcdfa32769e70d0a6beaa27b1bb86b05d8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 2fc8261cdc2e6c5c7af70d72bf057dfc5510f23cf7ec62afa2dab22cfeac86da5341f415bfea7ea2de8916625dc34db53ff3effe26bb8f6c2c1b5c82b4a6077f 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 3a6ca6e84b627c061842952a30c31f6fc9d8fd674ba1ccbcbf25a9ae402815d3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 12c1299b2bb03ea0275c6b07912e94bc466fc5a980f6a28f4bc61a087437ffc2116512f4fff8a249731fd1b9bee739970e4d6bcf7c75390c04ea01d634905738 $CDNENCFINISH_ADV2 .model IO_ISNKMIR_1ISRC UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 03300390c8e0e4e1a63fb6c35abd08fcdfa32769e70d0a6beaa27b1bb86b05d8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 2fc8261cdc2e6c5c7af70d72bf057dfc2809490dfc42ef27187069429d560caff6bf40d9cb7610b3c5551a6968c64ab014d135438318d35f1f49bc2c199398de 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 3a6ca6e84b627c061842952a30c31f6fc9d8fd674ba1ccbcbf25a9ae402815d3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 12c1299b2bb03ea0275c6b07912e94bc466fc5a980f6a28f4bc61a087437ffc2116512f4fff8a249731fd1b9bee739970e4d6bcf7c75390c04ea01d634905738 $CDNENCFINISH_ADV2 .model IO_VTHR UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 03300390c8e0e4e1a63fb6c35abd08fcdfa32769e70d0a6beaa27b1bb86b05d8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 17d6ead946fc736a47552e5b2ad08265674870e217a526c8360ce5320ca9077223588661027e95a56daf716654938e4237829a9d095f2c445e4b9f1361b1f08d 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 3a6ca6e84b627c061842952a30c31f6fc9d8fd674ba1ccbcbf25a9ae402815d3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .model IO_OPAMP UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 03300390c8e0e4e1a63fb6c35abd08fcdfa32769e70d0a6beaa27b1bb86b05d8b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 db6d7107abe5555dccc5641b42122ed7c45bf2806533f7799d1597ca6ec87e36466fc5a980f6a28f4bc61a087437ffc235c821b54a4090373d98bf612f47a929 3fe3348308b0d9e04a82b05158a8dd31360da5fdfe7eca659afa58dd4d34a598572c8dfa2cd67f34b99ee21c614c666c7fd8acfcf5c068ffc4864d95a6aad81b 3a6ca6e84b627c061842952a30c31f6fc9d8fd674ba1ccbcbf25a9ae402815d3b005954d0c14fccdd2d37c2a4ed2dfeb5da00ffb4feda32e92910266e2d1fe05 f9f0d64509041b0cecde7024e697cfa3bee6c75e8adbd814f5675d0ca9d2b5939070273eb8fe1fb7a7a9a8a26a5243036014394e2a740e0ecd307669c89ceca7 $CDNENCFINISH_ADV2 .subckt AtoD_AL5809 A D DPWR DGND + params: CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 81798e61699ab02189083ab13e6d23497dfcd52a4b4d84cdf20f7579edcf38e263a7b5215184191b0fe0833a20b068bd08978c136a73ca70e0fc2473a61715a8 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a 744bbcba15dc700be6ef0aea79492e69ab49c228344e19a4ece728f7a93f23a9f6af3aefb3165b566313a634f59385580389c21313f86646b021e9ae621b64bc 290012be5be89f16e1cdc618f9274a60572c8dfa2cd67f34b99ee21c614c666cd1c53bab7ad1cfd2ef09200416920ea8c3e15bde1a1b753e73e3a33e8d18e8f4 711ba2718a2b2343d976302afccefd2db71ab13ca8fa9475ccc4fff99f9be440b3fd54acd4183b9719d310d45577864966f8eaa71d4e4d56351cc563a6765fc9 e3e3a17636109a425fe6c7a27dc6248967503ce8ce8ba33fc1c6eb8a8bf6c248494731b9b1ce2154e935ce09ec72591a86158ff39c53b14476dc0b6b30ddc7b3 cf1f8e6894087e088372f392652313c8a52f24cbf6f7ec7605ad9a0b675182736252ca3509c725a727537f2ee25377db637d518c908083347189a3a93278e6fa $CDNENCFINISH_ADV2 .ends .subckt DtoA_BUF D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e108bd2ce1b36e530c38209210a485ba78f5027a50fbba397bcea612396775efd7e8e3a3a6d6f75c321557b9cf7f7cb3 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a $CDNENCFINISH_ADV2 .ends .subckt DtoA_AND2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e1783020f9a0485f2656917dda112d07d06d45ccae46cbfe583ac37a97b3fc2251c493d187bf6493ef08a18564366285 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG1 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58c9210d1e2cf931321f16a206999813e48a3182ba9081b6678d2a9f927d20e185d7e8e3a3a6d6f75c321557b9cf7f7cb3 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58b7267e464f45a71e479aa92874c19093f40a582e20b62f014f2e1a252bb7c714d7e8e3a3a6d6f75c321557b9cf7f7cb3 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a $CDNENCFINISH_ADV2 .ends .subckt DtoA_IBIAS D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee586d6bcfacafaeb99f3870bd828317f4df9e88ab8b0859f60527722dd7922b812981db451d33064b04e74f5e0eb6ef5ca7 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a $CDNENCFINISH_ADV2 .ends .subckt DtoA_ISNKMIR_3ISRC_1ISNK D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58c71791773ccd403672e164171d5ccd6970911c28f3cff4e1bc8abacd4b91d544b5b52e00a33c9d05afc7014e91e6cec2 0a685ea62a2ea3bf5d22932fa810bd65572c8dfa2cd67f34b99ee21c614c666cd1c53bab7ad1cfd2ef09200416920ea8c3e15bde1a1b753e73e3a33e8d18e8f4 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a $CDNENCFINISH_ADV2 .ends .subckt DtoA_ISNKMIR_1ISRC D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5804ed2c4cb41bb4c083460f8ab2ca72806c440ee8d1889ebea6d3133bb2eb55bd800edd7d4058f2ba17167ac0e5fdd33c 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a $CDNENCFINISH_ADV2 .ends .subckt DtoA_VTHR D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5810523ce55cb93b436be2b2d8663ffba4ae78126153a75e5820d8d40750379f2051c493d187bf6493ef08a18564366285 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a $CDNENCFINISH_ADV2 .ends .subckt DtoA_OPAMP D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5810523ce55cb93b436be2b2d8663ffba4057524b8e0e12a817eaee5978a8829d32b1807e7b644fe4edea9fe17efb5bd22 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585cb9c9c601e59acb8a6c14d5107c3650c7753196368ab62137481dc17d3e62e53a $CDNENCFINISH_ADV2 .ends .model DO_AL5809 doutput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccfba357d479232a29d3d79e344cb27a53860c7a94f27b0bc188473974a0bf2a67f51a30fcaeb16bceeed5135abab75fdef 165f20c6fa9cb4dba9b14dfa1689dc99c3df6386a3339466ba48aaf291b85de3b71ab13ca8fa9475ccc4fff99f9be44079cd67da21e8db9770cbe5b09ceed842 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model DIN_BUF dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccfa5d44d5e1e28fc5082900b8f6666a9c23acd88c493494f0c6311e0a3e081e47c01bdf24cc0c1974f62148f53d3a18229 165f20c6fa9cb4dba9b14dfa1689dc9946eddc61fe8ff49b8cbb3037bd55b82cc045592868568662b475d9dae1980a9801bdf24cc0c1974f62148f53d3a18229 56f51c7fef73e3778fc998197e8f059d949c333bb2026d1f782766bd6cc9ce804865802e42a3f8098774232520cf510d81db451d33064b04e74f5e0eb6ef5ca7 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model DIN_AND2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc9956fe1ca62344fd56ae042db09a115f722dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model DIN_BG1 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99a073dc84f6a321402fb74ae451cdaec92dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model DIN_BG2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99730d3ab9cc0f6d4c201888dbdab181792dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model DIN_IBIAS dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccfd5618f378e6a05cb59cdf9fffce17ac188fa77ed59f2f51f0054a3668eccf51ba0dda0b9f0ff7c00075c4cf7d1cea719 165f20c6fa9cb4dba9b14dfa1689dc992bf4a49f2c92bf239b558ae18feabb803a8a3ced46310555395fb71d02bef5bb077118ed39d46ef67ee8796d8f63b5e8 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model DIN_ISNKMIR_3ISRC_1ISNK dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99eb84f847c2f94d62d13318eecd6debb9fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model DIN_ISNKMIR_1ISRC dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99e2be111508fc4b11b46c6cc479bd7970fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model DIN_VTHR dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99ebeab298200f84d4c013ad1974f2850f2dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .model DIN_OPAMP dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8d1550a80414c20d86386f862a62b561f6af3aefb3165b566313a634f5938558a1ba0c915570bae7d862fc5f8b267ea059feb40de1c698974f1d0e518660d77b 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99eb84f847c2f94d62d13318eecd6debb9fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 2f1b23143dcb040f35797ceee3592fa523588661027e95a56daf716654938e4253598b5fbad201b08cc659fd12fb51d8dfe1680fa7ff892eabe9406cf01f1986 $CDNENCFINISH_ADV2 .ENDS *---------- AL5816 Spice Model ---------- **$ENCRYPTED_LIB **$INTERFACE .SUBCKT BEHAV_BUF1 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c1206dce6e01933fcbae06c387c0340313263550b1f02be3b8cb065b88fae3487f72f6f7a5283b150dbe5ab667249ae2d22 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d363fdf1735d0c9673bbb349ee6d1848af72b15dd60a8bd11b842170b335cda75 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16048c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 1d3b21f0c5cfb1ec3c523f2ab24bba464c974374411524865d54023c10e6da83f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF1 .SUBCKT BEHAV_BUF2 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c1206dce6e01933fcbae06c387c0340313263550b1f02be3b8cb065b88fae3487f72f6f7a5283b150dbe5ab667249ae2d22 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399dd504c609463db0a46ac194aec11541cdf72b15dd60a8bd11b842170b335cda75 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16048c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 1d3b21f0c5cfb1ec3c523f2ab24bba464c974374411524865d54023c10e6da83f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF2 .SUBCKT BEHAV_INV A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 5d629801781c626bdb78108f94ac773506dce6e01933fcbae06c387c0340313263550b1f02be3b8cb065b88fae3487f72f6f7a5283b150dbe5ab667249ae2d22 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de406006d2613dee6cdb24e0ae65df87912e072 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16048c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 1d3b21f0c5cfb1ec3c523f2ab24bba464c974374411524865d54023c10e6da83f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c $CDNENCFINISH_ADV2 .ENDS BEHAV_INV .SUBCKT BEHAV_AND2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 7f4d8d07b48671743da119f00e2978a3fc6b74ccb3c944ab337ed0baf91e23f0c6e27f18c32e8524cc608fee173a43f15765d6cd525ed437189359483b9fabdc e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d071e8f4204fbcb85ecb70294f4a849e5f72b15dd60a8bd11b842170b335cda75 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16048c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 1d3b21f0c5cfb1ec3c523f2ab24bba464c974374411524865d54023c10e6da83f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c $CDNENCFINISH_ADV2 .ENDS BEHAV_AND2 .SUBCKT BEHAV_AND3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 7f4d8d07b48671743da119f00e2978a3d1790686e076b08693c8ff1dec3e6e8c70d3542cb93be080db380e2d2708d3e25a0d99e261a09323363d4c4b7d35056c e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de406006d2613dee6cdb24e0ae65df87912e072 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16048c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 1d3b21f0c5cfb1ec3c523f2ab24bba464c974374411524865d54023c10e6da83f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c $CDNENCFINISH_ADV2 .ENDS BEHAV_AND3 .SUBCKT BEHAV_OR2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cdb68bdf439757a0c9a7c1894cf1b55648c8732fd7f98aa88e0dd3534776ff93c 044ecc750a360c43afc194cf53601f2ed487824ccd0b53225aaa56ab9f7974dc77987633042f7ddf8deeabe744eeb8cf566f867f9e5421f3d314124240ff0d3d e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de406006d2613dee6cdb24e0ae65df87912e072 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16048c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 1d3b21f0c5cfb1ec3c523f2ab24bba464c974374411524865d54023c10e6da83f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c $CDNENCFINISH_ADV2 .ENDS BEHAV_OR2 .SUBCKT BEHAV_OR3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cdb68bdf439757a0c9a7c1894cf1b55648c8732fd7f98aa88e0dd3534776ff93c 044ecc750a360c43afc194cf53601f2ef705a313234ef2ac69f00207be49bd4fe2e75f02732662a3bab2964381a09c7bf54cab319c4c35867fd226a08bc6a7cf 5bd9d4a179da5350202c1d155d069427b61b81c16253885cbadbe45a2c35fd461a2f518889fc719ba4f5ddbf5f84020c1d000dc9f3e7ff550cf5b0b3a0c41ffb e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de406006d2613dee6cdb24e0ae65df87912e072 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16048c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 1d3b21f0c5cfb1ec3c523f2ab24bba464c974374411524865d54023c10e6da83f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c $CDNENCFINISH_ADV2 .ENDS BEHAV_OR3 .SUBCKT BEHAV_NOR3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cd2ee294236473d04ab80823c30c2eba475189bbe04437c3e128683207208874c 4450fddf121883dcd64f79297fed85272ddcf90744eaffa673d4e33266d316a6e4697bcf19702e4526a066b33186371526102d81423512eb4c5b73aece5d80b7 60209919ed680d95b60b0e6316da86ccf35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b e111c2a7aec3e4088342a6a17f7d3ef107c732bae18662950d6dc717e77f61129dcac40c7ae2809eab70bf86c2f8b963f72b15dd60a8bd11b842170b335cda75 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada16048c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 1d3b21f0c5cfb1ec3c523f2ab24bba464c974374411524865d54023c10e6da83f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c $CDNENCFINISH_ADV2 .ENDS BEHAV_NOR3 .SUBCKT BEHAV_BGAP_noLoad1 VDD VSS VBG EN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f449b5c744f8eca2ac22759878b0cdee11 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d3dc34db943654ec01163ec38b15b61f56d2613dee6cdb24e0ae65df87912e072 d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae4af8173ad79b2440b398ed2fea475e885 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca0b5630b1f9603434d6ee851dd2ef22a1c8c7fa512a395cc6d2a6745d82780178 1d3b21f0c5cfb1ec3c523f2ab24bba46820d386f140d99c0afce23ce5081bed98008e35f20cad0ba12003889b2de10d6663dd82615ccdd036d55723ce320fdf7 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad1 .SUBCKT BEHAV_BGAP_DEN VDD VSS VBG EN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2e7858dafabf06dd2675764994eeb5a09595c3b3e2cb3a11ae9dda3c8ae7e596 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d3dc34db943654ec01163ec38b15b61f56d2613dee6cdb24e0ae65df87912e072 d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae4af8173ad79b2440b398ed2fea475e885 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca0b5630b1f9603434d6ee851dd2ef22a1c8c7fa512a395cc6d2a6745d82780178 1d3b21f0c5cfb1ec3c523f2ab24bba46820d386f140d99c0afce23ce5081bed98008e35f20cad0ba12003889b2de10d62786e30c0a7d5acceb868d9feba803d3 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_DEN .SUBCKT BEHAV_BGAP_noLoad2 VDD VSS VBG $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f449b5c744f8eca2ac22759878b0cdee11 e111c2a7aec3e4088342a6a17f7d3ef1e24309e7da15e27f1e3f72ae456a0fc5ad70af9c2be60423859aa6c8ac6402836d2613dee6cdb24e0ae65df87912e072 d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae4af8173ad79b2440b398ed2fea475e885 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca0b5630b1f9603434d6ee851dd2ef22a1c8c7fa512a395cc6d2a6745d82780178 1d3b21f0c5cfb1ec3c523f2ab24bba46d99732c2f3b0c1aaedcda9f387fb067b3a93452ef821ac1c875af808fe2d74038b6caf53d786247860bb1a1227620c68 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad2 .SUBCKT BEHAV_IBIAS VDD VSS IB $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f449b5c744f8eca2ac22759878b0cdee11 e111c2a7aec3e4088342a6a17f7d3ef1a9c0ac848c277c25d5454e9eb4f74e60ddf3b3752d4ccde4d6757bfac80e775707bff0f4f0551815e317e5314773d1f0 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca0b5630b1f9603434d6ee851dd2ef22a1c8c7fa512a395cc6d2a6745d82780178 82415293653b1eadb1ddc53673e62ed28c0473af8ac1a2284e51ac7db1e547427553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 1d3b21f0c5cfb1ec3c523f2ab24bba46d99732c2f3b0c1aaedcda9f387fb067b9b073ef2c7be40ae1644397760f8702caf8173ad79b2440b398ed2fea475e885 $CDNENCFINISH_ADV2 .ENDS BEHAV_IBIAS .SUBCKT BEHAV_ISNKMIR_3ISRC_1ISNK IIN IOUT0 IOUT1 IOUT2 IOUT3 DEN VDD VSS IVDD IVSS $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cf96e974201d8225b9172682f292e439bbf722e72cc8383f24b73fc1038a34e79 18f5312ba1d7284dbef83ccf5f60bb5ffc6b74ccb3c944ab337ed0baf91e23f0c6e27f18c32e8524cc608fee173a43f15765d6cd525ed437189359483b9fabdc e111c2a7aec3e4088342a6a17f7d3ef16113c426a90ca46c293260f00bd15a058002efc99e19b2c8e764a56aa3a8e6dbc656e6e83c752a3964616d46217c96bc 4b7ae4954cdb84e4074ca0b812afe13d06dce6e01933fcbae06c387c0340313263550b1f02be3b8cb065b88fae3487f72f6f7a5283b150dbe5ab667249ae2d22 7c80f5d104695480a54673870b66e4b589703a920b6d483b439b85c656b94c4e0d9b34f08631d839eefdc09d9ecb7447615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d20959e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 969146a415d37b3945aa04f72f8849e289703a920b6d483b439b85c656b94c4ef1040e58b42f7c9d11e3a134c11d2f12615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d20959e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 8d8493b82c235c07436c0e798c56d7e989703a920b6d483b439b85c656b94c4e927e455fa372ec9e508fd04c0830a536615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d20959e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 5224515ac5410e9371be888b718e840ae5855dc586ceae448c3588b4fefd9ebdb0518224544d5b72ec86dde1c9143d85615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d20959e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 72b4d86a659952a9a1f8fdc86ddbe01bbe54a185d02368ee960e70b6cd3a1256160a04c39cd3473ab2325a953fd0723d8c824a146fc1e16d0a18cfbd2f121b9b 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8816dc3da02b1684f2cb55defd3b673b120c02abd86d6878d21b5cb38bf1a202e9 e3b275c5cba4f501e595cb86dfcf4ae46157b12d4aef824874e5f68b206de526160a04c39cd3473ab2325a953fd0723d07370c783180cd39ae1f3b7d99ea9c97 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d88d9daabfa7e576de33528fb3cc31914426b8d02298dcf40df83faacb91853ac49 ba6ff860da4a7b1953161750ec4bc380f9980d803a453232eb5661593dd28dfd160a04c39cd3473ab2325a953fd0723df25008398479bbc648177d1e74110774 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d88d9daabfa7e576de33528fb3cc31914426b8d02298dcf40df83faacb91853ac49 004ebda7b3af78c7780c2207d1d7ab0212a483f59273173f893bef85e6ff77a5160a04c39cd3473ab2325a953fd0723d931a0dab4e640dd7ad3e2adce57585f7 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d88d9daabfa7e576de33528fb3cc31914426b8d02298dcf40df83faacb91853ac49 8d0a0c55ba39eb000d313b782cba47e7eb47d1d9990e623306ee2bf89200f01d0a6eace856187a5b0885e9ab2fc1631781af210a5b266b50bf4eedb01912b72d 27f8915165e8228fb78d4770f8580466e7dd47bfd0b68b59185c8f56e7ed64b84f94bc7a4dea027a96d591c92777e7c02ba88573b1e1f09310899e70dd6047a3 1d3b21f0c5cfb1ec3c523f2ab24bba4642d2d0b8a2f007170cbdde09be837aaaad50ea1366dae1a426e9c6427cb1976fd2a49d570a465e3680e26dff01fad220 0c3bf6c1c80d969871a3f30ab67c9e8ce4591d4b07f4ec01c960439d1bc97568a90510cb7fd0548e7bd97dc2381c62c36f3de92dea23ece7e70986a7eba91892 2bee72d9a5570f971ec08f12bfcd8f3a1e04b6e79b9e82cf29c7ba026113745d0c5249c3380e1b34912e72a06962a8e65765d6cd525ed437189359483b9fabdc $CDNENCFINISH_ADV2 .ENDS BEHAV_ISNKMIR_3ISRC_1ISNK .SUBCKT BEHAV_ISNKMIR_1ISRC IIN IOUT DEN VDD VSS IVDD IVSS PARAMS:arGain=45 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cf96e974201d8225b9172682f292e439bbf722e72cc8383f24b73fc1038a34e79 18f5312ba1d7284dbef83ccf5f60bb5ffc6b74ccb3c944ab337ed0baf91e23f0c6e27f18c32e8524cc608fee173a43f15765d6cd525ed437189359483b9fabdc e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399dc004e5a1ebe91d352539564f862f38f517a01ab012921277c7e68ce4c0b574c1 7c80f5d104695480a54673870b66e4b589703a920b6d483b439b85c656b94c4e3e42b7806a35789a89204bdfcd029af4baaeac90cbbd2cde2263ee3c07423ef3 242bad8c74b3e2d12c435f11bcd7b9b5a36522818e99ebc7c691be6164d899ba06dce6e01933fcbae06c387c034031326dcd6823c86262dabb547004740b78d8 0ad2a1e0d1ecb8b410280ca89efac5d73f1ec347665d95ab7e9fdf1a757e606d96070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 b4971c49d2ccc6d8e43e930af28614cb1334916c1997def3a9b5d23188a960db3f9e8c274ccca4e93838fdf4ea64f2357abdbff7ec6b86f986bdb09d1bb06f31 3134905bbcd7c34234b51fab8b576d3153b50224970c369aaf0704ab7cb9a5e77553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 8d0a0c55ba39eb000d313b782cba47e7eb47d1d9990e623306ee2bf89200f01d0a6eace856187a5b0885e9ab2fc1631781af210a5b266b50bf4eedb01912b72d 27f8915165e8228fb78d4770f8580466e7dd47bfd0b68b59185c8f56e7ed64b84f94bc7a4dea027a96d591c92777e7c02ba88573b1e1f09310899e70dd6047a3 1d3b21f0c5cfb1ec3c523f2ab24bba4642d2d0b8a2f007170cbdde09be837aaa964b041299fcd545513261b72e77b03b14618c5fb7931aede6dbb61c164661be 22dc2ad01aef37b8f7f601fbf6b5b95c8016524b778b569ae4534cb4bbbf6f38bc9c9aab20b1012dd00e421908f716a533099ebdc6542ba18454e1acc79b5368 $CDNENCFINISH_ADV2 .ENDS BEHAV_ISNKMIR_1ISRC .SUBCKT BEHAV_COMP_DEN VP VN DEN AVDD AVSS OUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9ddb1d84d0a8f08d2410e01231d7cac3dd8952bb5621ac2d5d3c71212ba90e984119db8a7ec5a41da9de3a58bb13d06f0a9 a81bfefd2faa7a21a7b82c80de8760c86476c1a6094a9980843d2d06b63db1f734477216e2652cc52103b4a5c6291c2e1c17b26ebad409233be5e2bb2a0a10fb 0c9418f49fde4590e8f8d91dee7c0795e7dd47bfd0b68b59185c8f56e7ed64b84f94bc7a4dea027a96d591c92777e7c02ba88573b1e1f09310899e70dd6047a3 e111c2a7aec3e4088342a6a17f7d3ef1e16a196f94b13893041bc6c353e70c69d6791d362207c859e7858dd5df9738ef49b5c744f8eca2ac22759878b0cdee11 d8655c4e2b4ce3f2d2894ef285928da621e4fda21c9a75cd2cce11354f47e45e06ae662ae91d0ad2a533b585996bc3e4566f867f9e5421f3d314124240ff0d3d ffd439da980ca9e75915e1ff16fc953d9cfeca020e1e1b9b89e5f50c398cac88e6e86cf62e4c6bee9d7f1e2df91d23486b8d02298dcf40df83faacb91853ac49 685f449d8327ac7c103c8a997e84130de59f052cb54e6cd58a26f52025835bcd7ae4889385e121b6194f03967ca43cc2cc532c32af40e07a10794fec0ac97c94 $CDNENCFINISH_ADV2 .ENDS BEHAV_COMP_DEN .SUBCKT BEHAV_VTHR VTHR DEN AVSS DVDD DVSS DOUT PARAMS:arVthr=1.65 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dda7179a2106b30c9e5daa51001a3ee69fd57ee23295e7e52ccdf1a38a6a14ca97606b888de2392d61c12ab26e504f1637 e68feee095d5ebbf714759ae7b074c256a6a2c1d328ccb9d6cf35670b07716941b52e0bfd079b2ca26d06f7eee989eab6d763d856d48539741140c85b9296e1e e111c2a7aec3e4088342a6a17f7d3ef1dcdb46c968c52a57eefb8a648f3c3f4c0951deb37a2beda5f5b056a6f3fef888f72b15dd60a8bd11b842170b335cda75 8b8927e379db18bffabea9367a778b74b390e9e4956466817f909bc05e58fbe28ce2091fb6d61635d67303cb7198f3d26d2613dee6cdb24e0ae65df87912e072 3fd0300256e589436344d787a6132768702d66a52778603811804101551ce62f96070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR .SUBCKT BEHAV_VTHR_HYST_VCC VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439b90950bd333991b88da40f34b4bf07e6 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cdbe220f4e8343a977698e6826022a28b4 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a3733ad17392edbc79570683d7110188f2a de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e4570f27edb3ec401f39652e345fc67e99b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f17553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415aa5858593529b2d2b3f92f463860378c86f162bdc8bb9d754f3e7aa57f7a70522 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4c6601057589b5a2098249076844f8e3073fc55286380a8f533c46e538dc22cad2 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe28ce2091fb6d61635d67303cb7198f3d26d2613dee6cdb24e0ae65df87912e072 8a148c7e2c90cc798fe030e76f591a69fc6ca8049868753be61d07ac56f1e9052ab4369818381bc7dfc8f232d22745e2368788d26317c120ea384f474d2ae27a $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_VCC .SUBCKT BEHAV_VTHR_HYST_VFAULT VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439b90950bd333991b88da40f34b4bf07e6 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cdbe220f4e8343a977698e6826022a28b4 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a3733ad17392edbc79570683d7110188f2a de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e4570f27edb3ec401f39652e345fc67e99b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f17553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415aa5858593529b2d2b3f92f463860378c86f162bdc8bb9d754f3e7aa57f7a70522 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4c98da52cd0095d34171cbe91aeb71e9b6283e4aac244282d800f998306075bbfd 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe28ce2091fb6d61635d67303cb7198f3d26d2613dee6cdb24e0ae65df87912e072 8a148c7e2c90cc798fe030e76f591a69891a0bbc4553512a1afa0b2e227228432ab4369818381bc7dfc8f232d22745e2368788d26317c120ea384f474d2ae27a $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_VFAULT .SUBCKT BEHAV_VTHR_HYST_TEMP VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439b90950bd333991b88da40f34b4bf07e6 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cdbe220f4e8343a977698e6826022a28b4 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a3733ad17392edbc79570683d7110188f2a de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e4570f27edb3ec401f39652e345fc67e99b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f17553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415aa5858593529b2d2b3f92f463860378c86f162bdc8bb9d754f3e7aa57f7a70522 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4ce3a2fcda99763e8f5feb8466203051ecf602c5df09516d07a5a4d2ad5466e8e1 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe28ce2091fb6d61635d67303cb7198f3d26d2613dee6cdb24e0ae65df87912e072 8a148c7e2c90cc798fe030e76f591a693261320e118c1ecf656c1256caa7211dd2b2654ddcf71970d3ad791b6526020d6cce6cb56a72f437ae3e367880804aad $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_TEMP .SUBCKT BEHAV_TEMP_GEN VDD VSS ILED IOUT TEMP PARAMS:arTheta_j=90 arAmbientTemp=25 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 2fe021ee4920ebc0b15ff7bc901583a1eb47d1d9990e623306ee2bf89200f01d0a6eace856187a5b0885e9ab2fc1631781af210a5b266b50bf4eedb01912b72d f2737d807680651bc4aaee489ce72710eb47d1d9990e623306ee2bf89200f01d0a6eace856187a5b0885e9ab2fc1631781af210a5b266b50bf4eedb01912b72d 20e3127dc65b7b7088269d46b21b6d3d7c8d15d7d00fabe650bcea5faf36e87986f60c33cd708afd0187025696cc3670ce29893ddbfa8bae5646ff6b6ddb3bd0 c27d03acf02f663db9ba018ec7a6c63908bca835f546932742dafd516544d61f1732065b80b68024a1bba46fc2caacfac93a5252cd67fb4d7d9f8782895f6c72 163c6c82d00fe2c1e829286bb831e6b6eb47d1d9990e623306ee2bf89200f01d0a6eace856187a5b0885e9ab2fc1631781af210a5b266b50bf4eedb01912b72d 0fdfc09ce687efe1350bfb1632a911a618fee9f1a5b2a03d1269fef0558d69f596070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 $CDNENCFINISH_ADV2 .ENDS BEHAV_TEMP_GEN .SUBCKT OPAMP_SLEW AVP AVN ENA PWM AVDD AVSS DVDD DVSS VOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9ddb1d84d0a8f08d2410e01231d7cac3dd80cb67ca54386e5c762431757c65d98e1606b888de2392d61c12ab26e504f1637 b37bb30e1d4328b5b13665e742fcb5d0d65eedb57cd472315ba0d271a55f2b2b9d4160c7645f4c0c8c34982bb35bfaf6368788d26317c120ea384f474d2ae27a 8cde6e01a4f84ee59858e809083c79d12085c43b8c2037a1981f1ca91878ba99b93f44e00318e3a3b7db66fb4181fc8b00488536686d5250a6ab21f0af1bc92e 601836f2c6cf73614c0e6409ac4c1cb94ea2dbb766cbaa49b2c802505875b912538e88519693a586bb18eb3c8de2ef45c3716051c1b84ce8cc03cf84c7b22d0c a2e012f6ec7f535428cdc24a21c0a82ee9185ab8ceb94b6477ba49baad92a26e538e88519693a586bb18eb3c8de2ef45c3716051c1b84ce8cc03cf84c7b22d0c 3ad54d7a4d31de15e280c6f45c4fce62ef1667da07bb4b0972fabbf14015fc6ab167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 327553efc10baec99d9927b4623f99d02de2f44147c41760d876d8c12dbe1def7c8d15d7d00fabe650bcea5faf36e879007b4a8f7c127185f948dc04a081686c f6f18544cbcbbf35ea93c54cc05b700879492c73dac52ddaf0022e9e6a0b5ea27553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 64890e15247841c63e77f51bae1e2e7399f0b56ee43fc61870400e101d7cf1fe8c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 b9af1d4ae47007a9853568c4895394f34613b03b4120d0bcb031c88f4c6e2253538e88519693a586bb18eb3c8de2ef45c3716051c1b84ce8cc03cf84c7b22d0c 94d027b174c1013b00f8a4698dfb178a79defd348aef2692f15b73aa1f6e73c296070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 224d7b556ffb1bbacfe5d2ed6193b3c3bf181a8309eb55dd693b3f1d87daa92296070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 68911a8b7526ae5fd35116eb69d2844f5f1643c14e02ef9bd153a39d7db89bb17553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 0dcbada07dcada0540e2dc1911a5c4a318de7239899f2d708e17eb2d98ab9ef08c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 685f449d8327ac7c103c8a997e84130d4efba3deace1d994d5af362e701cd0c996070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 $CDNENCFINISH_ADV2 .ENDS OPAMP_SLEW .SUBCKT BEHAV_REFSYS_FUSE VDD VSS SEL_5PIN_EN SEL_5PIN_VF SEL_8PIN_EN AWAKE PARAMS:ar5PinEn=0 ar5PinVf=0 ar8PinEn=0 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd8598ba0f60b3ca4f8a0b372f0d8906feb71bc76e5d2c01eaf5b3ed4df3244a7b5184a28a98d82ebbfbb6e1d128506ae5 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399de2219b9cd1d93b77e0a01f0c9de406006d2613dee6cdb24e0ae65df87912e072 2e73eb78f44c807e6d882a20fa8f77d7b9a874b3055e308c412c7f3aac1fdcb057f4f911dd9e5fba9a1c3e5ebe993824830bb14da6ba5c38c7bec59c0309cd8a 617bc50d9322ae7fa644cef00833126ab9a874b3055e308c412c7f3aac1fdcb0d7013f68d86f68e9c9af029a2f8c6053830bb14da6ba5c38c7bec59c0309cd8a 1471b79070b4eab8b92f0fe620451818b9a874b3055e308c412c7f3aac1fdcb0a711213d5d055c9d722b9f124dd2b00b830bb14da6ba5c38c7bec59c0309cd8a $CDNENCFINISH_ADV2 .ENDS BEHAV_REFSYS_FUSE .SUBCKT TOP_AL5814 VCC_PAD VSS SET_FAULT_PAD REF_PAD V_SET_PAD FB_PAD EN_PAD V_FAULT_PAD OUT_PAD + PARAMS:TjaVar=90 TaVar=25 Sel5PinEnVar=0 Sel5PinVfVar=0 Sel8PinEnVar=0 * INTERNAL REFERENCE VOLTAGES $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 b13c86a1d5059658fef20b8e384b5efcbbe0edc9cf37106ece2645245ce2c7e1f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c 0cd33ae9a95b52968343defb8d5ef192ddc2dc1d83f3803e5218d4c2addf03ac84fe5f5462e40963fac3a531fbc3cc13667c2ffdc02ab60e37258c9dbca2cd27 16cca5b342db76d24f19228eda5f62517d6897de61f872650b6c0ab307400781b167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 3f913966a0d36b6856d2464b8a408be1e5e0e45a6b921954bb7f23c91267620cd11b8f69441a17c2fccbe3e491c105c134d5c93007f6ceab1af3143af95091d5 65f8c71b66fd5d6fe2c389223dd91db58409cabb8fe2c9a015ea16bd970745e4e1b5e475a90deac352423dc14c92d31734d5c93007f6ceab1af3143af95091d5 50a6dbb18bc75342861f2e6941ab0333f9bc25da93253167732402fd86b5d7e7259653a376bb4ae509e5a421417a18f19dfb530b4c2a337a3b7221d2bf143fe7 44182f4277d17cfee56e817e04f550da13a7652a5d002c6bbfb75b0fd7ec7ee4577ddbf3cb1a8e0296f7bea265b70ca10245b0daf5dd26441522378c7bfda65d 6ed9acac35d64189a592788897b1f1ac4603d105f6ebffa9909f152e41007edbc47476de1ab9a932eda5bf339bc421bc6cce6cb56a72f437ae3e367880804aad 40e2937d76cdfbb1e40f79ddf41bc9321b08281f818ac462ce99f8a7799dec6be7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 f79c10d351ea31a920ad08bd44970ec5a2fe499f2b9f25dc9a2a62b77f6ad6d6b167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 37560ffc8a897158de79e5523f0d4f94cf61f90e74f77398db44c0a6b058c8540cbf39fee1642bb468fe52dcb5f8607970ab029ed563a3809cb692ff9af63337 282e17293116c6f4f823f36a13c0d254b61b81c16253885cbadbe45a2c35fd461a2f518889fc719ba4f5ddbf5f84020c1d000dc9f3e7ff550cf5b0b3a0c41ffb 8a8f3f4ba7405cc668ba14ff96f598a201f16f3715f27e465039a5fbd360df848b464895c4a78055d24cd6f158512514f72b15dd60a8bd11b842170b335cda75 d39848fbda05a05e7ac42c8c248403f04dd697483072ecc8d2995da8c5ebdd0e0ab24a4f01714a04752909065000a44b566f867f9e5421f3d314124240ff0d3d 4e44da540303161f2e39c4ff87237556f44260e3647cda7856a0447edef42c220d2d5b47293f431a70cba8d714dc6472468227db2f5f7bc6506f6faa3df52bd7 4d33869ccdef1f2d69c91044b452eaed5209411427d62e7cb47b37aa3183240903245222455d075843a0213491958d4ed2eade8c8fb87af6a7933c04b6d8af74 75b42c20f4f98171c3ed339b4addc782a9d6e9035cfd407c4463503b2034423de7169ef25c5dec220f7d2740c9e5649f38760d50aa913d7d963643c4b0b33024 b9539a448712a87bf0ab0bddf2fda720af37121594ae9defbe6b463b178d1768e77e4388a4ae33cf6dba504991841a766f162bdc8bb9d754f3e7aa57f7a70522 e77f18bf66c31ec52cf66c43bd736a58d0b9f7d394ee5ed0c9f4293d64aebdb2daf4a8fea2e283f41764e993bbbdd303c821e4688a22abc1b6fca28fd22369b0 407047534e3c18da2af653044a77c1700a685ea62a2ea3bf5d22932fa810bd65e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 62f125d631c09b20ccd6a4195be4c3875a9fd0867e7edcaaedc3d9a95d0e7d8df62e61d699928f709e4555942b89a81d95f28468b035197b1e0bdc468491e9d5 121f97ffd99f439de4eba6763e94b4f90e6bc26aff93d323dc69ffffa0146ac9e66fb52fc927fa3dd745411cb7a513d8c8c7fa512a395cc6d2a6745d82780178 af0295eb3fa98d83e17dbf52b4b2ac8dbe2479d50b1aa9a2def9a0f86cfa8bf83c445be4921629a7706c463159d4759978b5e762bde405dd5ecaba36d1d4044c 406257312aa2590a67043d3a4a849acbfadc44e95b6a0016e7790ae757b46026e2f82f7af623fe091d6bbf3dd2005ef96d763d856d48539741140c85b9296e1e 973fbb817a5c6b18d4dcfc6399d5d8119924321a1487fb3a11fd8a03ee93cb2b5b7f05f9738da332c4dc546c30f622f06f162bdc8bb9d754f3e7aa57f7a70522 4029b17456d1fa296b1302c0a941f85ddf0312452ebe46b8172156122ec3b985e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 12f0f2801b9608d3c1f0cc4b9fc325bbf093a625bf11d6b68269ade5536e020a4613b03b4120d0bcb031c88f4c6e2253c8c7fa512a395cc6d2a6745d82780178 0dc43a8702af797df3b51560d88ca73ba2c0fa271927edc9029b58138022458355cb13929e15668d17e76d0a31eec26834d5c93007f6ceab1af3143af95091d5 d4193cf59edfca856ab9cc068ca3a6947d4cd7ff73402c2c946035eaf0d454b1a7092fcfb4122b1b6ad67b53c6ecdca507bff0f4f0551815e317e5314773d1f0 bffc25fc793ca80dcff62c91f4f16ed8bcd0327f37297c751925f9b8550be3e4001694d2451c576e337d589f9f9d15c86fe0b517159d859082c7d2de9540f75b bb9b30a7a1910269b258c3612cc70dcf7c8d15d7d00fabe650bcea5faf36e87986f60c33cd708afd0187025696cc3670ce29893ddbfa8bae5646ff6b6ddb3bd0 83136f93efef522786c7c17d1910412245973e95febaec2e13b1e630876e43c567592b20887d4f2ab3f21c0a1b43ea8daf8173ad79b2440b398ed2fea475e885 546da40a20d02325d07b0754f13d25a9de586abead0c91b5c5ebc75d334dfbb9e79f6869976a40b12ec1e5d81a4433a95372c453ef93471c4734032055bb0962 9827a7ac12e87b33a0212ef80d49a443f697c63c9c019114a02090f78edf27a6d86b981b69f4e2a3c4c9afac50918dd1d77904ec3b2cbaaaf074e34496375371 33a4d8236d5fea6cb3dfb670540e2738a7fdcb44547c3bf3874abbc95a30aeb6f3de955b2f6966a8315b8a43c0355d62ef27089e0532fba7810d6dec34c4e687 2f9313824791ebfe1fd87050d435d75ce7169ef25c5dec220f7d2740c9e5649f79ad55780a947ddc64be8806fc54c2052c69c314864e1faecbdda2f6b9c5031b b5272af1ae54c2b3a9c28f23653599cd0b94b9b0879ae9b234c12616bf619f556d2485b412b6d2b33b192eebe3ab90006cce6cb56a72f437ae3e367880804aad e9530056431a065d090c465d74758654968d3a0ab5502ba3fc18768aaa7b70ce984b0ed9ac790268a9f5053ef09e361f3d0e9cbcd3a004a9e256e75843b64421 78eb37bd10671d445e1b54f35565128206dce6e01933fcbae06c387c0340313263550b1f02be3b8cb065b88fae3487f72f6f7a5283b150dbe5ab667249ae2d22 5fe37d3b00c548500861e70c6ab96fe60cbfac9427bd06e393577917a5a92609fd2f12ee88ab621abc45b6e6d0d25dc5c492c6c8aa45845a1660d0d04a012644 688a116e56bac7bc82a1adb1b8ac7f686d66535b717a58059aeeb8e949455b8374c0908f8c84e50c60d3c55a66b15b79566f867f9e5421f3d314124240ff0d3d eabcb037c2adc3e621b71c241baf2d66d4f969c9cee8ffabf926190d3d5c3239fac83f1184e3a82f4e1da1618fbf7e894ba184767b04da735a2601f4835169f3 6d363e3278ff62969287c9da8b69dfdfde8a2dc48b1a7d3f69bdcd064275706d8281076424d3530b4b7ffb1c655e0ff0a71e69027522123ca7470a731eda47d2 9a7b47f95f9990bfd881d2e18986b07b5b9623c7a10095af63930e85ea9e042d96070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 f0de08da966d40726b72a7c0d085115981a9de3d33e38b0f58d3c0505119aa517a693b3f98696629a08dc9268533f6b2bd6bbead744232607bfae512b52e195d 75a9b963246ba8915e018a64ce49af26747137aeca3cc3518d52aae389e69343e86da5703134e41a0f22498d7f143d1934d5c93007f6ceab1af3143af95091d5 6f95d0f096c335935f5b8a6cf8711a959e2929502fb257bfba253c4c9420343ac5cdaa627d5925a09805c73928c7b52cebb0a0c23ea29c78bed2ed8b8b8ce921 1a70135b64229bfb302c0680dcab350f0c1fe12af36086be1745e17adc48bfda8c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 8875eeaa02a878028b5d6c4d0eb20527f6afd0d4096d8febca4802c1f9668f6706dce6e01933fcbae06c387c034031326dcd6823c86262dabb547004740b78d8 c0fd8f1b24fa26485a3a8f5cb680e66e3c099a099b49ad758216875a6b6c3d0d037e1f993663bb22839a9adf54d88e2bb8a07dbf4bfcf07992700c4218720d01 07bb7c8ded7669ba0bb66fabcaaceccd5a55f04b7bfe2f4e67d41a5b71952809c40cdd98131bf63b5fe4d3f7f793f88ae6b845667d95ffecade32a681aab647f 430f50b4bc452a5199c15c4058a6cd5d6cddc31c8ca25e57d8dc622ee3823007b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f ee7618e90b475f2fa36c0df1ceb2f3bb2ae03b642ca14814e09501d200b822299bf7961e84119b3911d7d51d588935dae100b1eec337f2e4c0a14938105851d9 13499fcd54c56c4528200433024b186ceb47d1d9990e623306ee2bf89200f01d0a6eace856187a5b0885e9ab2fc1631781af210a5b266b50bf4eedb01912b72d 1be332166e547eee18a9abe56c4f0343ed9fd8075e2eee5543747c3318eb2a33e7169ef25c5dec220f7d2740c9e5649f38760d50aa913d7d963643c4b0b33024 92a2db20fb29f65023a80c7ec478c3d1fe50b069c7dfeffaedec8cf7a2485e4d7c8d15d7d00fabe650bcea5faf36e879007b4a8f7c127185f948dc04a081686c 94e55319aed85665e668d2c65b60993df93c472d2ced5f2f8e9967ef3dbae7178c135d4e3dbc6db591c3ca8e87168f7d75174abb34727791dd0171a6bbe9cfe5 $CDNENCFINISH_ADV2 .ENDS TOP_AL5814 .SUBCKT AL5816 VCC_PAD VSS FB_PAD V_FAULT_PAD OUT_PAD + PARAMS:Tja=90 Ta=25 Sel5PinEn=0 Sel5PinVf=0 Sel8PinEn=0 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 498c281ccb083b0c0e55cf0230437a75420d1149c3e0ccaefce68dbb31530fa4d539947cbac2ee91dea2843de03810ff0920e2c975c750fe78d47e28ae371dcc 4bbd087d38d235b237f5ec8ed84043808b27cbfa345064d7fa2f8df205f5ccdf5a64156b0b229f00af0478f0116190fa279da9a95c88300fc67ce347c5431c4a 34b2956325c8b2f15c68f584d6c2747704aa98937e74cb7216adfba225d36c9df512d822438374f2a31192bff16c0a9459650c7f0fd26106a8028c2380f2308e 362e9a6fb9b7074ab51c7796050fce667c8d15d7d00fabe650bcea5faf36e87986f60c33cd708afd0187025696cc3670ce29893ddbfa8bae5646ff6b6ddb3bd0 11f315fcb28e0535d5ee304d59fd0103999bb2dfeb302211717ed9a8c0082195e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 16629dd40c434d81937539d504c81e96ef1667da07bb4b0972fabbf14015fc6ab167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 14af3039ad682c28c791944b5d8aeaa0209b8baad5240aa0ff95e468bbc742f45f457ce2b1b65bd549524559562e0dfb3fb4be935db8aafabdab3b35e8ea65a8 74a49953508548e27f44e61bfd774a94ef1667da07bb4b0972fabbf14015fc6ab167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 066154e35611375de41ff12f9d9afb97447bee820f26c7c04312c1b837edcdf084fe5f5462e40963fac3a531fbc3cc13667c2ffdc02ab60e37258c9dbca2cd27 35fdbc231b058463338051c0644508167dda6830d15020bf07b8945e592408f1f697c63c9c019114a02090f78edf27a6ab9fc5afe99bfed90c2ec37785d57a22 440b27681ce3b1c6da10e09a959d13687dda6830d15020bf07b8945e592408f1f697c63c9c019114a02090f78edf27a6ab9fc5afe99bfed90c2ec37785d57a22 9044f2ace17729c28156f81fa3d4c6f48d73009e8199f146d89d89b8860e6bfae7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 97dd084e6c068cbf65789583f7a57e3cef1667da07bb4b0972fabbf14015fc6ab167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 3b49fb5f8dc29202c89753ccf8c2fdcb4b8440e5d772898d41aaffcad02cc8487553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 758668214ee91bd34efdb62258804fe57f07eb16589bec0460ceba8532982d884a22c7e506422c140419810d69b219cfaafce1f5b97524d75459e83f0bde4d83 0fb73c3fe943e8b4692b8e1f75499c6a7c8d15d7d00fabe650bcea5faf36e87986f60c33cd708afd0187025696cc3670ce29893ddbfa8bae5646ff6b6ddb3bd0 7114bfeac982282d320add93945cce45bafcc01c8b57a8bf88f65322c704a08a1c58c85ce1ee44a26fefebb661d79d5d5765d6cd525ed437189359483b9fabdc 3e0ead198e425e3a51f56806b2774f26ed91f66412a3e7a993c3c2f4b6d11934b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f d7888ab1c595ca0f15778ad6d15b66b57f07eb16589bec0460ceba8532982d884a22c7e506422c140419810d69b219cfaafce1f5b97524d75459e83f0bde4d83 44db56b0f63fc16080a61c0273f8d4bd5f457ce2b1b65bd549524559562e0dfbe0b9b5440680db0abb6df4bc2ca664a81dbf1d50c164e08fb04582c4638ae245 2eb7dbcc1e30467782c82bcbec1051de6aa3acfc3c73c3e5835447060ecf4c99eb47d1d9990e623306ee2bf89200f01de3a65134e6fea4d21149535dd70590c7 d626c05c9b7c05e5275645816d40a3cc7553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db f9c21e1d6a9e9fbff3d8f106afb9e6847dda6830d15020bf07b8945e592408f1f697c63c9c019114a02090f78edf27a6ab9fc5afe99bfed90c2ec37785d57a22 7a7c3df3a3f195fde9d999bedfec05fdeb47d1d9990e623306ee2bf89200f01d0a6eace856187a5b0885e9ab2fc1631781af210a5b266b50bf4eedb01912b72d 365df52ae3a7aa16df0aec200f37f6787dda6830d15020bf07b8945e592408f1f697c63c9c019114a02090f78edf27a6ab9fc5afe99bfed90c2ec37785d57a22 29820dd5a67b382bd0bbc4d6262b6f69eb47d1d9990e623306ee2bf89200f01d0a6eace856187a5b0885e9ab2fc1631781af210a5b266b50bf4eedb01912b72d 5a29595f94a30dd8e0dd33d518e03e28094aa781e0ecfc5c646145577d5afc2de7169ef25c5dec220f7d2740c9e5649f38760d50aa913d7d963643c4b0b33024 a5561e9abd897d6df2e418bc07c7c4d7e66fb52fc927fa3dd745411cb7a513d8538e88519693a586bb18eb3c8de2ef45c3716051c1b84ce8cc03cf84c7b22d0c 3fe1ffd451565058a87327377ae6248a7f07eb16589bec0460ceba8532982d884a22c7e506422c140419810d69b219cfaafce1f5b97524d75459e83f0bde4d83 b701ccb42d43c16baae8217fd507bf405f457ce2b1b65bd549524559562e0dfbe0b9b5440680db0abb6df4bc2ca664a81dbf1d50c164e08fb04582c4638ae245 $CDNENCFINISH_ADV2 .ENDS AL5816 .MODEL BCP56 NPN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f d4cbe0c62df2cad59b1e45988cdeda4ed74526f928c00affa90f5cef74d33eade9185ab8ceb94b6477ba49baad92a26ec8c7fa512a395cc6d2a6745d82780178 86e6718ce693d8aa4fde7eb7526604ff2772300722753ccc2a262abba17cf856ccd531611823001552af23d374258f84bfcf400a12a7565a88036dde6137748d 3ea3db14bcf19e5cc52be965a744e11a8e5e53ef04da41eeaf87af327c2da1c6eb9066ac6e792bb624b9ec4020804bdc76d9285d79f6b98bd435d78c4c2c0d7e bba02babd62bd845edf32fef31e16069b891ab108120e4368828f42d2a8e57d985525b57f6e09d7f6a0f9c8c706ca91a02ad6d3ada125c8789947a8a10099fab 4b18924fbd82417a81af9cc8776c5627f2004de1fe3328183acb99c3201c1f013a88dba75b4138cddca669839f0e739993facf4886dec637969352a2c936ebf0 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL MLOAD NMOS $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 7eeb9c0ed81c009e5c85f2d161da370fdbb34d93fe1e0d2465d31b0f370b0b06e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 670a7dc18237996c9cfe8aefcc5690b085499d991e2211f0455536e9365fe4f3b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f $CDNENCFINISH_ADV2 .SUBCKT LED_8V IN OUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 964ecaeb5607f1ba9295b40ec73e968ae7169ef25c5dec220f7d2740c9e5649f79ad55780a947ddc64be8806fc54c2052c69c314864e1faecbdda2f6b9c5031b 5e1604529d7f2a48d2f1e70629fcc1d77553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db e1241ce8881172a9f81c62a19ce60a4e7553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db 5467c2851c36ebe3acca1ee2ef9e5eb37553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db 8ea6b42e4b19785afaa0cf44390f272f7553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db eaea13824faab259b3b241d9d14e12b17553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db 9818535d7895627e0f17af07a1d194217553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db 2a7a7dadfc0175ff1142924801ee5f3d7553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db 53411dfc14d4f3cabdc66726f7b565c37553e6ed6bdce60776c9f46a798770121efa6851ee71de9b4ce86a3f1a327792918cba4fff6560a49ca4ce3aa46fb4db 0789104cd463aba4c524aad5c18530b88c135d4e3dbc6db591c3ca8e87168f7d707d3015e416eae812465c9acf3ecde238f19363a9cc2909eb066cee539cc5a8 5c8e61db545938b8fffc53e8e3705d6cde897648e497442deb7b68446c6f0e11538e88519693a586bb18eb3c8de2ef45c3716051c1b84ce8cc03cf84c7b22d0c 781b70ff966d271b52c7201aa01ffeb91a17cd0d8275194ca5613d6876d85365b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f $CDNENCFINISH_ADV2 .ENDS .model Sen VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f c9b0641a35c857bb3789b3e21ebc4df129f23d2cc799cf3161ada0892829bbadf35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c f8730028c5d3490486715d64987d57a738a2bf64ac3b83dd38bc2cfe931f35b8b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model Smod VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 56cdf838d91a1828b2f10df2f5693def65544b4087a35b32c72c735cd51c1648f697c63c9c019114a02090f78edf27a6ab9fc5afe99bfed90c2ec37785d57a22 97e1b4d74bd0d8fcd286ca8d480bb8823d2d4faebf5ba25e4554db2402e58454b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model Sout VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 37626a38a57a7f38a80219a57bdb73433414208fe32167444ae580e512071245b167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 5f08a29b23de343e5cf4e03543971a453d2d4faebf5ba25e4554db2402e58454b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model Spd1 VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 23bd934d75f2e52fa087b3879c1efcde3414208fe32167444ae580e512071245b167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 5f08a29b23de343e5cf4e03543971a453d2d4faebf5ba25e4554db2402e58454b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model Spd2 VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 65f81053bf4be1a9de744cea9bf3c23265544b4087a35b32c72c735cd51c1648f697c63c9c019114a02090f78edf27a6ab9fc5afe99bfed90c2ec37785d57a22 5f08a29b23de343e5cf4e03543971a453d2d4faebf5ba25e4554db2402e58454b61b81c16253885cbadbe45a2c35fd46a73dcb4fda97d4656fa46c99b8bc992f 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model Dsimple d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 8ac03806a6d6f724c8473bdd52339dceeb47d1d9990e623306ee2bf89200f01d0a6eace856187a5b0885e9ab2fc1631781af210a5b266b50bf4eedb01912b72d 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model D74 d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 75460640a3186b4ff39d254f7527cdf7b56870c0eb97140a206e3084eaafcdfb06dce6e01933fcbae06c387c034031326dcd6823c86262dabb547004740b78d8 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model D74CLMP d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 646799414338b0c9354194d5b70aa7a612a1ffb81a2eed6bc075f8ec54c8078284fe5f5462e40963fac3a531fbc3cc13667c2ffdc02ab60e37258c9dbca2cd27 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model Q74 npn $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 24ffa71e874d149a10b2c92ba5c8716d07e77f5b40d60db846dfb0a7e4cfe8d1b167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 746924b950a2bc290a4e53b0267d84b8e7169ef25c5dec220f7d2740c9e5649f79ad55780a947ddc64be8806fc54c2052c69c314864e1faecbdda2f6b9c5031b cfe965f35139ba298051e2d8f8f3da6cbb2fce69ff40fb58cd24d1555dd492c3f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c 0eef750c1b08bc7410ebe4be9da9754fa76d842d4dd424e75af9b9f7ca36433ff35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c e775ad024035b735dcbc5ed1857829e842606b45f7904972d009f1addf06af4696070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 811290e6cbf6784ed54a134aac29accfa1f1865a45d4141ed115b413e69c36c9f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c b2ba60de915f7a79394f2e6b45f68e6ee450350d7b2bcf0e6be75452a706147396070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 efe68e5febac8dabb5bfd782b5d9d7b88c135d4e3dbc6db591c3ca8e87168f7d707d3015e416eae812465c9acf3ecde238f19363a9cc2909eb066cee539cc5a8 745d23fb01ef2d6605bbec6e552d54f784fe5f5462e40963fac3a531fbc3cc135a814ed95aa0404c518fe277d93fb4b3d75f687a458d89582186406f6dd8b4a6 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .MODEL T_BUF UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 1fbb5437d9e35a3bfa0047bfce2e49c2b61b81c16253885cbadbe45a2c35fd461a2f518889fc719ba4f5ddbf5f84020c1d000dc9f3e7ff550cf5b0b3a0c41ffb 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef5215085c396f2b57e576a36d28da3ff7412e86f162bdc8bb9d754f3e7aa57f7a70522 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c211185c396f2b57e576a36d28da3ff7412e86f162bdc8bb9d754f3e7aa57f7a70522 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_BUF1 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 1fbb5437d9e35a3bfa0047bfce2e49c2b61b81c16253885cbadbe45a2c35fd461a2f518889fc719ba4f5ddbf5f84020c1d000dc9f3e7ff550cf5b0b3a0c41ffb 2c59efc8237a0898d382be2ede8701a595041c97a76684e910beaf2f6a1c0d8926ea52a8065eed569c0bcb4e29069f2607bff0f4f0551815e317e5314773d1f0 1411fc0582296e9e4300da8fa2d82e92f16beaa3c636f4024c334542a7664b07d6f73a6a2d14b728ac8c23004fd379e949b5c744f8eca2ac22759878b0cdee11 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_BUF2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 1fbb5437d9e35a3bfa0047bfce2e49c2b61b81c16253885cbadbe45a2c35fd461a2f518889fc719ba4f5ddbf5f84020c1d000dc9f3e7ff550cf5b0b3a0c41ffb 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3c70086e6e8d1710467c40272b91f1ee3566f867f9e5421f3d314124240ff0d3d e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027c70086e6e8d1710467c40272b91f1ee3566f867f9e5421f3d314124240ff0d3d 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_NOR3 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3c70086e6e8d1710467c40272b91f1ee3566f867f9e5421f3d314124240ff0d3d e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027c70086e6e8d1710467c40272b91f1ee3566f867f9e5421f3d314124240ff0d3d 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_BG2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f e6111e304b7b0483e1347fd711c855ce7314896fe405611ac89677aadd176d95425746de49fc9556743b81818a1291da566f867f9e5421f3d314124240ff0d3d 77582d186faf9f922f6138d14bee2b5d53aab8ccaf3361b70732a55a922f27d6425746de49fc9556743b81818a1291da566f867f9e5421f3d314124240ff0d3d 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_IBIAS UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 9c64b132a42898a08d0377db7bd4576c3ec70c319b72b2d6ed30dceec9b35d7c9bcd27ddef3c56cb1c12d1fcd858183a566f867f9e5421f3d314124240ff0d3d 62d2d1cfaa8d3bd5e0cfaa3a71c0a2e17a3a3600ec8bb118d56f460889a45a639bcd27ddef3c56cb1c12d1fcd858183a566f867f9e5421f3d314124240ff0d3d 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_ISNKMIR_3ISRC_1ISNK UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f f0faa082395d5e3eeb8fe11e07469b9f948d4612f5ff8d9681828a6fb42bbfa5de193bcd965f07c8e10fd13497823a15f72b15dd60a8bd11b842170b335cda75 dc9c49c59370aed9c937040175edd0c235fef9707227ce615b983b6c718615ffde193bcd965f07c8e10fd13497823a15f72b15dd60a8bd11b842170b335cda75 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_COMP_DEN UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f cc968e09d3f08b09bf3213b351baa16a6fd7ee29bdaad8d615b26b479866375079f1beca9ebd4040a4fb62a19e8acba2f72b15dd60a8bd11b842170b335cda75 5edc4278cf942a1dc268dbff37b837cf3dea5cde435a702813f859224a446ddd79f1beca9ebd4040a4fb62a19e8acba2f72b15dd60a8bd11b842170b335cda75 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_VTHR UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3c70086e6e8d1710467c40272b91f1ee3566f867f9e5421f3d314124240ff0d3d e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027c70086e6e8d1710467c40272b91f1ee3566f867f9e5421f3d314124240ff0d3d 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_VCC UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f f73c26f36e898e81de2893d9ff7a8aa96af3cd573a9290181dbd4af508e14fe58db688de76d55a8686c2936588fb5f0007bff0f4f0551815e317e5314773d1f0 7aa3578626ed56763645cbc0caf4e54e9930d2c3c4f516f9ff61607bfee470270d6ab3dcea2246fa1faba759ad8dcd0f07bff0f4f0551815e317e5314773d1f0 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_VFAULT UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 4a0bc5fdba9f65b841c32da58b20cbe66a507b4839199c775889817a20825d16a9b3e043efac141006d9b40c085758016f162bdc8bb9d754f3e7aa57f7a70522 1aa05dfabd8cc1863c46f52d29dd985b98e19709b0f06018e259ad803e50ac88a9b3e043efac141006d9b40c085758016f162bdc8bb9d754f3e7aa57f7a70522 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_TEMP UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b3c70086e6e8d1710467c40272b91f1ee3566f867f9e5421f3d314124240ff0d3d e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c027c70086e6e8d1710467c40272b91f1ee3566f867f9e5421f3d314124240ff0d3d 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_ISNKMIR UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 4a0bc5fdba9f65b841c32da58b20cbe66a507b4839199c775889817a20825d16a9b3e043efac141006d9b40c085758016f162bdc8bb9d754f3e7aa57f7a70522 1aa05dfabd8cc1863c46f52d29dd985b98e19709b0f06018e259ad803e50ac88a9b3e043efac141006d9b40c085758016f162bdc8bb9d754f3e7aa57f7a70522 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_SRFF UGFF $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 65d36f6542c7047860f7993459a746aa6a7e0b9139dbee8b5eef1fc0ac7176be821fd180a681bcab439679a1e87fdd3ef72b15dd60a8bd11b842170b335cda75 a4d398c7d8b82997fc8228d98eaa2bbb1fda409fdfcc8182cefbdf39b9213e4433bbe34be17f39f017cbfc4221b97c34f72b15dd60a8bd11b842170b335cda75 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_AND2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 1fbb5437d9e35a3bfa0047bfce2e49c2b61b81c16253885cbadbe45a2c35fd461a2f518889fc719ba4f5ddbf5f84020c1d000dc9f3e7ff550cf5b0b3a0c41ffb 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef5215085c396f2b57e576a36d28da3ff7412e86f162bdc8bb9d754f3e7aa57f7a70522 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c211185c396f2b57e576a36d28da3ff7412e86f162bdc8bb9d754f3e7aa57f7a70522 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .MODEL T_OR2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef5215085c396f2b57e576a36d28da3ff7412e86f162bdc8bb9d754f3e7aa57f7a70522 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c211185c396f2b57e576a36d28da3ff7412e86f162bdc8bb9d754f3e7aa57f7a70522 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .subckt DIGIFPWR AGND + optional: DPWR=$G_DPWR DGND=$G_DGND + params: VOLTAGE=1.0v REFERENCE=0v * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 70377785674f05234daf157ce38e73dacc908f23d1304d55d0451a4ac0fc9e7aeb47d1d9990e623306ee2bf89200f01de3a65134e6fea4d21149535dd70590c7 1c1ddb44ec313d3673f794b7e42d77d462a2ccfcd52e6234a6da988c7d28e003b167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed b2c4b22bf92115676670c11196a31e916f01d0dcf60bf6ce91e1f8f148192a6e7c8d15d7d00fabe650bcea5faf36e879007b4a8f7c127185f948dc04a081686c e24b75f0e895f2a6c316162f14db3ffd62a2ccfcd52e6234a6da988c7d28e003b167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed $CDNENCFINISH_ADV2 .ends .model IO_BUF UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 03300390c8e0e4e1a63fb6c35abd08fc741d64c44f9c09ac9d436cbbe5e3123bb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 7c16d8fdefe8a20216c2c03f6156410ce087a6ed9520be9e6de741fed5245fd4f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 3a6ca6e84b627c061842952a30c31f6f24d1b4b67e22abc8befaba656283c50fb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model IO_AND2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 03300390c8e0e4e1a63fb6c35abd08fc741d64c44f9c09ac9d436cbbe5e3123bb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 70ce328e1544baa368191b1b5d90d31b0ab7c0c60a035bdd8d0dde016872505b96070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 3a6ca6e84b627c061842952a30c31f6f24d1b4b67e22abc8befaba656283c50fb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model IO_BG1 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 03300390c8e0e4e1a63fb6c35abd08fc741d64c44f9c09ac9d436cbbe5e3123bb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 7c16d8fdefe8a20216c2c03f6156410c98abce0870b3d2dca1029bbd3e14cb27f35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 3a6ca6e84b627c061842952a30c31f6f24d1b4b67e22abc8befaba656283c50fb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model IO_BG2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 03300390c8e0e4e1a63fb6c35abd08fc741d64c44f9c09ac9d436cbbe5e3123bb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 7c16d8fdefe8a20216c2c03f6156410c3ea4d4c19eb51b9ffebf6a19c629583bf35db340d71562b993b6dd64c75292fe89c594369a235615aa4b83cc50e46f0c 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 3a6ca6e84b627c061842952a30c31f6f24d1b4b67e22abc8befaba656283c50fb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model IO_IBIAS UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 03300390c8e0e4e1a63fb6c35abd08fc741d64c44f9c09ac9d436cbbe5e3123bb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 2fc8261cdc2e6c5c7af70d72bf057dfcc2defa119e5c86d7a4822606df9fa33bf697c63c9c019114a02090f78edf27a6ab9fc5afe99bfed90c2ec37785d57a22 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 3a6ca6e84b627c061842952a30c31f6f24d1b4b67e22abc8befaba656283c50fb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model IO_ISNKMIR_3ISRC_1ISNK UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 03300390c8e0e4e1a63fb6c35abd08fc741d64c44f9c09ac9d436cbbe5e3123bb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 2fc8261cdc2e6c5c7af70d72bf057dfc5510f23cf7ec62afa2dab22cfeac86da3c422c00c122b882a61290bbda30327b5765d6cd525ed437189359483b9fabdc 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 3a6ca6e84b627c061842952a30c31f6f24d1b4b67e22abc8befaba656283c50fb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 6f9185a857302061018b80d6e05c0be8f697c63c9c019114a02090f78edf27a6d86b981b69f4e2a3c4c9afac50918dd1d77904ec3b2cbaaaf074e34496375371 $CDNENCFINISH_ADV2 .model IO_ISNKMIR_1ISRC UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 03300390c8e0e4e1a63fb6c35abd08fc741d64c44f9c09ac9d436cbbe5e3123bb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 2fc8261cdc2e6c5c7af70d72bf057dfc2809490dfc42ef27187069429d560caf7c8d15d7d00fabe650bcea5faf36e879007b4a8f7c127185f948dc04a081686c 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 3a6ca6e84b627c061842952a30c31f6f24d1b4b67e22abc8befaba656283c50fb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 6f9185a857302061018b80d6e05c0be8f697c63c9c019114a02090f78edf27a6d86b981b69f4e2a3c4c9afac50918dd1d77904ec3b2cbaaaf074e34496375371 $CDNENCFINISH_ADV2 .model IO_VTHR UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 03300390c8e0e4e1a63fb6c35abd08fc741d64c44f9c09ac9d436cbbe5e3123bb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 17d6ead946fc736a47552e5b2ad082659ae7ce6e970ea3872e8f1a7abcf7088396070502a2cd2b4f7f179c56c91419e863960862ca915b829d00348cc4e21c54 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c30e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 3a6ca6e84b627c061842952a30c31f6f24d1b4b67e22abc8befaba656283c50fb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .model IO_OPAMP UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 03300390c8e0e4e1a63fb6c35abd08fc741d64c44f9c09ac9d436cbbe5e3123bb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed db6d7107abe5555dccc5641b42122ed709b564b33bc74b3732d382e4344e758bf697c63c9c019114a02090f78edf27a6ab9fc5afe99bfed90c2ec37785d57a22 3fe3348308b0d9e04a82b05158a8dd31360da5fdfe7eca659afa58dd4d34a598e7dd47bfd0b68b59185c8f56e7ed64b89f4d48d28f9e4314c000a55e3a383595 3a6ca6e84b627c061842952a30c31f6f24d1b4b67e22abc8befaba656283c50fb167b40b6afef048adb05f9374e5b758130557e171dd2a236a834ccb12721bed 037c910bc19055991736e3cc1e3102cff35db340d71562b993b6dd64c75292fe8dc40ff37a84ce506dc135b79e5f24bb5a5876e653cfaf8a5de997783e30821b $CDNENCFINISH_ADV2 .subckt AtoD_AL5809 A D DPWR DGND + params: CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 81798e61699ab02189083ab13e6d23497dfcd52a4b4d84cdf20f7579edcf38e26347b6ee6ccfbfd602eb6a6738ba12bd566f867f9e5421f3d314124240ff0d3d 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 744bbcba15dc700be6ef0aea79492e69a45ab0b98a62c997dbfc4d52d2c0913c538e88519693a586bb18eb3c8de2ef45c3716051c1b84ce8cc03cf84c7b22d0c 290012be5be89f16e1cdc618f9274a60e7dd47bfd0b68b59185c8f56e7ed64b84f94bc7a4dea027a96d591c92777e7c02ba88573b1e1f09310899e70dd6047a3 711ba2718a2b2343d976302afccefd2de7169ef25c5dec220f7d2740c9e5649f79ad55780a947ddc64be8806fc54c2052c69c314864e1faecbdda2f6b9c5031b e3e3a17636109a425fe6c7a27dc624895f457ce2b1b65bd549524559562e0dfbe0b9b5440680db0abb6df4bc2ca664a81dbf1d50c164e08fb04582c4638ae245 cf1f8e6894087e088372f392652313c8a52f24cbf6f7ec7605ad9a0b675182736252ca3509c725a727537f2ee25377dbaf8173ad79b2440b398ed2fea475e885 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BUF D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e108bd2ce1b36e530c38209210a485baa6da1b9b72ca388cf53ca1a7adbf1107f72b15dd60a8bd11b842170b335cda75 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 $CDNENCFINISH_ADV2 .ends .subckt DtoA_AND2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e1783020f9a0485f2656917dda112d07d06d45ccae46cbfe583ac37a97b3fc2234d5c93007f6ceab1af3143af95091d5 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG1 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58c9210d1e2cf931321f16a206999813e44f5a77bb6682e2d56e075f38f980888df72b15dd60a8bd11b842170b335cda75 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58b7267e464f45a71e479aa92874c19093396ad8b94531e00b46fc3b7b8976cec8f72b15dd60a8bd11b842170b335cda75 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 $CDNENCFINISH_ADV2 .ends .subckt DtoA_IBIAS D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee586d6bcfacafaeb99f3870bd828317f4df9e88ab8b0859f60527722dd7922b812949b5c744f8eca2ac22759878b0cdee11 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 $CDNENCFINISH_ADV2 .ends .subckt DtoA_ISNKMIR_3ISRC_1ISNK D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58c71791773ccd403672e164171d5ccd6970911c28f3cff4e1bc8abacd4b91d544b5b52e00a33c9d05afc7014e91e6cec2 0a685ea62a2ea3bf5d22932fa810bd65e7dd47bfd0b68b59185c8f56e7ed64b84f94bc7a4dea027a96d591c92777e7c02ba88573b1e1f09310899e70dd6047a3 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 $CDNENCFINISH_ADV2 .ends .subckt DtoA_ISNKMIR_1ISRC D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5804ed2c4cb41bb4c083460f8ab2ca72806c440ee8d1889ebea6d3133bb2eb55bd800edd7d4058f2ba17167ac0e5fdd33c 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 $CDNENCFINISH_ADV2 .ends .subckt DtoA_VTHR D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5810523ce55cb93b436be2b2d8663ffba4ae78126153a75e5820d8d40750379f2034d5c93007f6ceab1af3143af95091d5 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 $CDNENCFINISH_ADV2 .ends .subckt DtoA_OPAMP D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5810523ce55cb93b436be2b2d8663ffba4057524b8e0e12a817eaee5978a8829d307bff0f4f0551815e317e5314773d1f0 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585c7553e6ed6bdce60776c9f46a798770129123d403f572fb9f8043602b6edf06a9 $CDNENCFINISH_ADV2 .ends .model DO_AL5809 doutput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccfba357d479232a29d3d79e344cb27a538ddec97b9b0965dcd748962fc8defd3346f162bdc8bb9d754f3e7aa57f7a70522 165f20c6fa9cb4dba9b14dfa1689dc99c3df6386a3339466ba48aaf291b85de3e7169ef25c5dec220f7d2740c9e5649f38760d50aa913d7d963643c4b0b33024 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model DIN_BUF dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccfa5d44d5e1e28fc5082900b8f6666a9c23acd88c493494f0c6311e0a3e081e47c2ce10d23d46a0c716a34d1a5c4ba926a 165f20c6fa9cb4dba9b14dfa1689dc9946eddc61fe8ff49b8cbb3037bd55b82cc045592868568662b475d9dae1980a982ce10d23d46a0c716a34d1a5c4ba926a 56f51c7fef73e3778fc998197e8f059d949c333bb2026d1f782766bd6cc9ce804865802e42a3f8098774232520cf510d49b5c744f8eca2ac22759878b0cdee11 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model DIN_AND2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc9956fe1ca62344fd56ae042db09a115f722dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model DIN_BG1 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99a073dc84f6a321402fb74ae451cdaec92dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model DIN_BG2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99730d3ab9cc0f6d4c201888dbdab181792dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model DIN_IBIAS dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccfd5618f378e6a05cb59cdf9fffce17ac188fa77ed59f2f51f0054a3668eccf51ba0dda0b9f0ff7c00075c4cf7d1cea719 165f20c6fa9cb4dba9b14dfa1689dc992bf4a49f2c92bf239b558ae18feabb803a8a3ced46310555395fb71d02bef5bb077118ed39d46ef67ee8796d8f63b5e8 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model DIN_ISNKMIR_3ISRC_1ISNK dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99eb84f847c2f94d62d13318eecd6debb9fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model DIN_ISNKMIR_1ISRC dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99e2be111508fc4b11b46c6cc479bd7970fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model DIN_VTHR dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99ebeab298200f84d4c013ad1974f2850f2dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .model DIN_OPAMP dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 0900673d04eb51b5622a2ced389d166d538e88519693a586bb18eb3c8de2ef45fe2391590e4c6dc6b852a5401221904d919ffc771a5120d6d821226c50e7521f 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99eb84f847c2f94d62d13318eecd6debb9fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed 337a021ef9ad721c510e7409ceb6683996070502a2cd2b4f7f179c56c91419e81d3d6803382bb10ff1c30ed90e8a404ed133da843223aead7fce8898457328aa $CDNENCFINISH_ADV2 .ENDS *---------- AL5817 Spice Model ---------- **$ENCRYPTED_LIB **$INTERFACE .SUBCKT BEHAV_BUF1 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c125990712c8ab82c757cdbfbba993f6c801fae1fe4462b868412423be1f3182cc4fe5258584c170fcb5fdfaf98add13905 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d2de83347514cc3b92a40379545cfd5fc06107970348240fef3b7e779b362fa17 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 1d3b21f0c5cfb1ec3c523f2ab24bba46d1fa1e35af1321f41859c5cc3a25a340dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF1 .SUBCKT BEHAV_BUF2 A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 33ed0726e81b980aaf1fab88ee9e1c125990712c8ab82c757cdbfbba993f6c801fae1fe4462b868412423be1f3182cc4fe5258584c170fcb5fdfaf98add13905 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d94ff6b9ee480626ac4940e12d3d63c8606107970348240fef3b7e779b362fa17 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 1d3b21f0c5cfb1ec3c523f2ab24bba46d1fa1e35af1321f41859c5cc3a25a340dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 $CDNENCFINISH_ADV2 .ENDS BEHAV_BUF2 .SUBCKT BEHAV_INV A VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 5d629801781c626bdb78108f94ac77355990712c8ab82c757cdbfbba993f6c801fae1fe4462b868412423be1f3182cc4fe5258584c170fcb5fdfaf98add13905 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d71b773df1858f1bcc713e037d3d60749ba13f6455bf5a70d9dd007915e0f941c c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 1d3b21f0c5cfb1ec3c523f2ab24bba46d1fa1e35af1321f41859c5cc3a25a340dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 $CDNENCFINISH_ADV2 .ENDS BEHAV_INV .SUBCKT BEHAV_AND2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 7f4d8d07b48671743da119f00e2978a3fc6b74ccb3c944ab337ed0baf91e23f00ec9342b51dbdf9c0890e73633d2a0bdcb8974ea1c77f981da4fbdc9c587f18a e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399ddfba758f91fcea919c2fc6e258395e7806107970348240fef3b7e779b362fa17 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 1d3b21f0c5cfb1ec3c523f2ab24bba46d1fa1e35af1321f41859c5cc3a25a340dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 $CDNENCFINISH_ADV2 .ENDS BEHAV_AND2 .SUBCKT BEHAV_AND3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c15f3562240d05332a07061caa5be791a07fbc48ed1da5b20a17c83e9a14b93cd 7f4d8d07b48671743da119f00e2978a3d1790686e076b08693c8ff1dec3e6e8c70d3542cb93be080db380e2d2708d3e25a0d99e261a09323363d4c4b7d35056c e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d71b773df1858f1bcc713e037d3d60749ba13f6455bf5a70d9dd007915e0f941c c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 1d3b21f0c5cfb1ec3c523f2ab24bba46d1fa1e35af1321f41859c5cc3a25a340dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 $CDNENCFINISH_ADV2 .ENDS BEHAV_AND3 .SUBCKT BEHAV_OR2 A B VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cdb68bdf439757a0c9a7c1894cf1b55648c8732fd7f98aa88e0dd3534776ff93c 044ecc750a360c43afc194cf53601f2ed487824ccd0b53225aaa56ab9f7974dc621f3f3628f82a9fc476e2b4bbffe1f22d984e386040445165673abad035966c e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d71b773df1858f1bcc713e037d3d60749ba13f6455bf5a70d9dd007915e0f941c c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 1d3b21f0c5cfb1ec3c523f2ab24bba46d1fa1e35af1321f41859c5cc3a25a340dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 $CDNENCFINISH_ADV2 .ENDS BEHAV_OR2 .SUBCKT BEHAV_OR3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cdb68bdf439757a0c9a7c1894cf1b55648c8732fd7f98aa88e0dd3534776ff93c 044ecc750a360c43afc194cf53601f2ef705a313234ef2ac69f00207be49bd4fe2e75f02732662a3bab2964381a09c7bf54cab319c4c35867fd226a08bc6a7cf e7e12e1ec9c5f1ff144d6bca4c38b5c5e9d5a56d01cb61b4094d18d8a18bc27433015a39f64615ad8ea79cf613e6c53c4688728a85083d3582fd982e773c87ce e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d71b773df1858f1bcc713e037d3d60749ba13f6455bf5a70d9dd007915e0f941c c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 1d3b21f0c5cfb1ec3c523f2ab24bba46d1fa1e35af1321f41859c5cc3a25a340dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 $CDNENCFINISH_ADV2 .ENDS BEHAV_OR3 .SUBCKT BEHAV_NOR3 A B C VDD VSS Y $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cd2ee294236473d04ab80823c30c2eba475189bbe04437c3e128683207208874c 4450fddf121883dcd64f79297fed85272ddcf90744eaffa673d4e33266d316a6e4697bcf19702e4526a066b33186371526102d81423512eb4c5b73aece5d80b7 f85b0d35e5753b171be5b1a0e22b0436dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 e111c2a7aec3e4088342a6a17f7d3ef107c732bae18662950d6dc717e77f61124ef85bcd13c9337707298003142483f406107970348240fef3b7e779b362fa17 c7cca2b54f8db9e8b051361d1ff287f17d13b63fd4166db0c5938fe09ada1604de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 1d3b21f0c5cfb1ec3c523f2ab24bba46d1fa1e35af1321f41859c5cc3a25a340dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 $CDNENCFINISH_ADV2 .ENDS BEHAV_NOR3 .SUBCKT BEHAV_BGAP_noLoad1 VDD VSS VBG EN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f4917e92b26114e98ed89a0f009cb49a8d e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d6208d1d3e5f37eab17e1cf717e8a4531ba13f6455bf5a70d9dd007915e0f941c d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae43c5bac3cfdaec4b29506375326ee5471 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca8ca607973acc8024f922e549e4aff01ddb1920fd8bf847aeeccf404e7c3f59eb 1d3b21f0c5cfb1ec3c523f2ab24bba46820d386f140d99c0afce23ce5081bed98008e35f20cad0ba12003889b2de10d6e5073942ac4d27bc843368d2fbf0796e $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad1 .SUBCKT BEHAV_BGAP_DEN VDD VSS VBG EN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2e7858dafabf06dd2675764994eeb5a09595c3b3e2cb3a11ae9dda3c8ae7e596 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d6208d1d3e5f37eab17e1cf717e8a4531ba13f6455bf5a70d9dd007915e0f941c d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae43c5bac3cfdaec4b29506375326ee5471 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca8ca607973acc8024f922e549e4aff01ddb1920fd8bf847aeeccf404e7c3f59eb 1d3b21f0c5cfb1ec3c523f2ab24bba46820d386f140d99c0afce23ce5081bed98008e35f20cad0ba12003889b2de10d62786e30c0a7d5acceb868d9feba803d3 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_DEN .SUBCKT BEHAV_BGAP_noLoad2 VDD VSS VBG $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f4917e92b26114e98ed89a0f009cb49a8d e111c2a7aec3e4088342a6a17f7d3ef1e24309e7da15e27f1e3f72ae456a0fc567ed543c25490bd934a741e8e3cc2104ba13f6455bf5a70d9dd007915e0f941c d8ff0f1929cd0c688b750b76b0558297b4d398a037aa7a803faf0102f99e1547656fdd745998b16eeec50d1ca0e27ae43c5bac3cfdaec4b29506375326ee5471 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca8ca607973acc8024f922e549e4aff01ddb1920fd8bf847aeeccf404e7c3f59eb 1d3b21f0c5cfb1ec3c523f2ab24bba46d99732c2f3b0c1aaedcda9f387fb067b3a93452ef821ac1c875af808fe2d74038b6caf53d786247860bb1a1227620c68 $CDNENCFINISH_ADV2 .ENDS BEHAV_BGAP_noLoad2 .SUBCKT BEHAV_IBIAS VDD VSS IB $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453c2eb9a2eec370c560fb46a83190ad82f4917e92b26114e98ed89a0f009cb49a8d e111c2a7aec3e4088342a6a17f7d3ef1a9c0ac848c277c25d5454e9eb4f74e60ddf3b3752d4ccde4d6757bfac80e775701df65f12242c198d641aa179ca8c82e 7739cf2ef0fc7689c875093c477e059e06d9f011a9d3e50e4c53c1bdb7b27dca8ca607973acc8024f922e549e4aff01ddb1920fd8bf847aeeccf404e7c3f59eb 82415293653b1eadb1ddc53673e62ed28c0473af8ac1a2284e51ac7db1e54742e61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 1d3b21f0c5cfb1ec3c523f2ab24bba46d99732c2f3b0c1aaedcda9f387fb067b9b073ef2c7be40ae1644397760f8702c3c5bac3cfdaec4b29506375326ee5471 $CDNENCFINISH_ADV2 .ENDS BEHAV_IBIAS .SUBCKT BEHAV_ISNKMIR_3ISRC_1ISNK IIN IOUT0 IOUT1 IOUT2 IOUT3 DEN VDD VSS IVDD IVSS $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cf96e974201d8225b9172682f292e439bbf722e72cc8383f24b73fc1038a34e79 18f5312ba1d7284dbef83ccf5f60bb5ffc6b74ccb3c944ab337ed0baf91e23f00ec9342b51dbdf9c0890e73633d2a0bdcb8974ea1c77f981da4fbdc9c587f18a e111c2a7aec3e4088342a6a17f7d3ef16113c426a90ca46c293260f00bd15a058002efc99e19b2c8e764a56aa3a8e6dbc656e6e83c752a3964616d46217c96bc 4b7ae4954cdb84e4074ca0b812afe13d5990712c8ab82c757cdbfbba993f6c801fae1fe4462b868412423be1f3182cc4fe5258584c170fcb5fdfaf98add13905 7c80f5d104695480a54673870b66e4b589703a920b6d483b439b85c656b94c4e0d9b34f08631d839eefdc09d9ecb7447615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d209592f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 969146a415d37b3945aa04f72f8849e289703a920b6d483b439b85c656b94c4ef1040e58b42f7c9d11e3a134c11d2f12615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d209592f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 8d8493b82c235c07436c0e798c56d7e989703a920b6d483b439b85c656b94c4e927e455fa372ec9e508fd04c0830a536615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d209592f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 5224515ac5410e9371be888b718e840ae5855dc586ceae448c3588b4fefd9ebdb0518224544d5b72ec86dde1c9143d85615d8879a1191808bce44fff1d470c69 10b8a3df7ed0f553c0b18da55e0a73e4120b58b8330148e420f8da1702d209592f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 72b4d86a659952a9a1f8fdc86ddbe01bbe54a185d02368ee960e70b6cd3a1256160a04c39cd3473ab2325a953fd0723d8c824a146fc1e16d0a18cfbd2f121b9b 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8816dc3da02b1684f2cb55defd3b673b12476db77f1f311602d9ba860ea515c58d e3b275c5cba4f501e595cb86dfcf4ae46157b12d4aef824874e5f68b206de526160a04c39cd3473ab2325a953fd0723d07370c783180cd39ae1f3b7d99ea9c97 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8894ffc7f7e0686b90924f7c0f2e033cc953463a0885e323a0ec52f8983f5d6bf4 ba6ff860da4a7b1953161750ec4bc380f9980d803a453232eb5661593dd28dfd160a04c39cd3473ab2325a953fd0723df25008398479bbc648177d1e74110774 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8894ffc7f7e0686b90924f7c0f2e033cc953463a0885e323a0ec52f8983f5d6bf4 004ebda7b3af78c7780c2207d1d7ab0212a483f59273173f893bef85e6ff77a5160a04c39cd3473ab2325a953fd0723d931a0dab4e640dd7ad3e2adce57585f7 20a6b359758588d4d9d62202693b55b4c63baa79665544f5cde3162779921d8894ffc7f7e0686b90924f7c0f2e033cc953463a0885e323a0ec52f8983f5d6bf4 8d0a0c55ba39eb000d313b782cba47e76bd2ab95a878d1fa9da7fb2e1c8a2cd5ed1235e971fd091cdc842572717d0327f27478dc38625a3c8aef02bec49c015e 27f8915165e8228fb78d4770f85804662f110c66ac782d6fceb67f26e8443224a5924526c72de94621b496f55a5cdbfeecf9a0e227deb9e8443c4c7bcc055bcc 1d3b21f0c5cfb1ec3c523f2ab24bba4642d2d0b8a2f007170cbdde09be837aaaad50ea1366dae1a426e9c6427cb1976fd2a49d570a465e3680e26dff01fad220 0c3bf6c1c80d969871a3f30ab67c9e8ce4591d4b07f4ec01c960439d1bc97568a90510cb7fd0548e7bd97dc2381c62c36f3de92dea23ece7e70986a7eba91892 2bee72d9a5570f971ec08f12bfcd8f3a1e04b6e79b9e82cf29c7ba026113745d619c122edc6122e2ce7c6ba536072725cb8974ea1c77f981da4fbdc9c587f18a $CDNENCFINISH_ADV2 .ENDS BEHAV_ISNKMIR_3ISRC_1ISNK .SUBCKT BEHAV_ISNKMIR_1ISRC IIN IOUT DEN VDD VSS IVDD IVSS PARAMS:arGain=45 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd6077121917a50b4bd57c6770d0fc453cf96e974201d8225b9172682f292e439bbf722e72cc8383f24b73fc1038a34e79 18f5312ba1d7284dbef83ccf5f60bb5ffc6b74ccb3c944ab337ed0baf91e23f00ec9342b51dbdf9c0890e73633d2a0bdcb8974ea1c77f981da4fbdc9c587f18a e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399dc004e5a1ebe91d352539564f862f38f540fdf39232d25d18278f96ba63a59879 7c80f5d104695480a54673870b66e4b589703a920b6d483b439b85c656b94c4e3e42b7806a35789a89204bdfcd029af4baaeac90cbbd2cde2263ee3c07423ef3 242bad8c74b3e2d12c435f11bcd7b9b5a36522818e99ebc7c691be6164d899ba5990712c8ab82c757cdbfbba993f6c80cb86852dc9e82fdf9320384923714685 0ad2a1e0d1ecb8b410280ca89efac5d70d48cef225dd6f5ca09d6f399fd401fa72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 b4971c49d2ccc6d8e43e930af28614cb1334916c1997def3a9b5d23188a960db3f9e8c274ccca4e93838fdf4ea64f2357abdbff7ec6b86f986bdb09d1bb06f31 3134905bbcd7c34234b51fab8b576d3153b50224970c369aaf0704ab7cb9a5e7e61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 8d0a0c55ba39eb000d313b782cba47e76bd2ab95a878d1fa9da7fb2e1c8a2cd5ed1235e971fd091cdc842572717d0327f27478dc38625a3c8aef02bec49c015e 27f8915165e8228fb78d4770f85804662f110c66ac782d6fceb67f26e8443224a5924526c72de94621b496f55a5cdbfeecf9a0e227deb9e8443c4c7bcc055bcc 1d3b21f0c5cfb1ec3c523f2ab24bba4642d2d0b8a2f007170cbdde09be837aaa964b041299fcd545513261b72e77b03b14618c5fb7931aede6dbb61c164661be 22dc2ad01aef37b8f7f601fbf6b5b95c8016524b778b569ae4534cb4bbbf6f38bc9c9aab20b1012dd00e421908f716a5b6756e694b4cf8291f425ebcaa5a14e2 $CDNENCFINISH_ADV2 .ENDS BEHAV_ISNKMIR_1ISRC .SUBCKT BEHAV_COMP_DEN VP VN DEN AVDD AVSS OUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9ddb1d84d0a8f08d2410e01231d7cac3dd8952bb5621ac2d5d3c71212ba90e984119db8a7ec5a41da9de3a58bb13d06f0a9 a81bfefd2faa7a21a7b82c80de8760c86476c1a6094a9980843d2d06b63db1f734477216e2652cc52103b4a5c6291c2e1c17b26ebad409233be5e2bb2a0a10fb 0c9418f49fde4590e8f8d91dee7c07952f110c66ac782d6fceb67f26e8443224a5924526c72de94621b496f55a5cdbfeecf9a0e227deb9e8443c4c7bcc055bcc e111c2a7aec3e4088342a6a17f7d3ef1e16a196f94b13893041bc6c353e70c69d6791d362207c859e7858dd5df9738ef917e92b26114e98ed89a0f009cb49a8d d8655c4e2b4ce3f2d2894ef285928da621e4fda21c9a75cd2cce11354f47e45e8bdf43a242d125a74fbf4eee289d70382d984e386040445165673abad035966c ffd439da980ca9e75915e1ff16fc953d9cfeca020e1e1b9b89e5f50c398cac88ed29d10519112559ae26c63f9456f5af53463a0885e323a0ec52f8983f5d6bf4 685f449d8327ac7c103c8a997e84130de59f052cb54e6cd58a26f52025835bcd7ae4889385e121b6194f03967ca43cc2cc532c32af40e07a10794fec0ac97c94 $CDNENCFINISH_ADV2 .ENDS BEHAV_COMP_DEN .SUBCKT BEHAV_VTHR VTHR DEN AVSS DVDD DVSS DOUT PARAMS:arVthr=1.65 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dda7179a2106b30c9e5daa51001a3ee69fd57ee23295e7e52ccdf1a38a6a14ca97606b888de2392d61c12ab26e504f1637 e68feee095d5ebbf714759ae7b074c256a6a2c1d328ccb9d6cf35670b07716948afb2f7ad60c9b108a3091f4ece0ca3c89633a320f63931b7c4bb3afb6f75482 e111c2a7aec3e4088342a6a17f7d3ef1dcdb46c968c52a57eefb8a648f3c3f4c6d8e5231c766b466812a4d8d061743d106107970348240fef3b7e779b362fa17 8b8927e379db18bffabea9367a778b74b390e9e4956466817f909bc05e58fbe231291691a7c987be70e1a0ab1afed1e1ba13f6455bf5a70d9dd007915e0f941c 3fd0300256e589436344d787a6132768a875d8268f9a32ea28f8f736db5c7dff72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR .SUBCKT BEHAV_VTHR_HYST_VCC VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439307b99e20afb2a443da9d1bb62fb4ea2 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cdf3ffab9f84d28ff69426991f7b0dae09 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a3742191a39f2e20de471dc73a7ae49af56 de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e49ee5961bcd4eea9905af16871ee62afee9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1e61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415a84c4b49ada2d60744278d8b15a1cdba9083e1303838ea23fad91feee7a3dc1ff 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4c6601057589b5a2098249076844f8e30722ac2d311d066789866275f5a45135a9 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe231291691a7c987be70e1a0ab1afed1e1ba13f6455bf5a70d9dd007915e0f941c 8a148c7e2c90cc798fe030e76f591a69fc6ca8049868753be61d07ac56f1e9052ab4369818381bc7dfc8f232d22745e22404120b6aa5f1677b1b28fddae1e0d0 $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_VCC .SUBCKT BEHAV_VTHR_HYST_VFAULT VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439307b99e20afb2a443da9d1bb62fb4ea2 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cdf3ffab9f84d28ff69426991f7b0dae09 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a3742191a39f2e20de471dc73a7ae49af56 de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e49ee5961bcd4eea9905af16871ee62afee9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1e61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415a84c4b49ada2d60744278d8b15a1cdba9083e1303838ea23fad91feee7a3dc1ff 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4c98da52cd0095d34171cbe91aeb71e9b60a1a00bd304a38ffc40a259c6c596739 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe231291691a7c987be70e1a0ab1afed1e1ba13f6455bf5a70d9dd007915e0f941c 8a148c7e2c90cc798fe030e76f591a69891a0bbc4553512a1afa0b2e227228432ab4369818381bc7dfc8f232d22745e22404120b6aa5f1677b1b28fddae1e0d0 $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_VFAULT .SUBCKT BEHAV_VTHR_HYST_TEMP VTHR DEN AVSS DVDD DVSS DOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 070fcbe348e3a9544c6c951abbf0b8c0c2a350c8d451c377a91c402c983cb2ac77b2a850d42d970bddc7c65a5af99439307b99e20afb2a443da9d1bb62fb4ea2 07bfb6416f30822a9171bb65340a518978672e93d15f1e66f5ee48e44e64a6834b84d714949a59adf777ab80358274cdf3ffab9f84d28ff69426991f7b0dae09 bf39f5b7c6802be4e4ec840bbbf484399eb894ad0142ea08aa2fe60d637e10e23353af67b6219257891953c8f6535ebfbe12423226ec76051bad6fd01dcf9fbd d27d9dc9b88197217c2212ab81df9d8974e3f020f7e5d47ad118abc718d537656034e516c5836a16e885656f51451c81274cf8e6d57517eb1490869e4b5436ca 9216c8fc4efd8f2c74679cd785bd45fb73c3545cb6d858403ff0024577bc48df735309c791d5aa09ee6adb5a626e1a3742191a39f2e20de471dc73a7ae49af56 de1a2e79aa7ab97e58febefcb5a7abd0809b8c6f94b67724ba92e16c7ff0d9917bad274b5f322900523919d95ea8bcb15ac8dde1bcd47c73905ab640b81ea3fd 3fa7f1e1b3525d04ce3bbd66c0b137e49ee5961bcd4eea9905af16871ee62afee9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 0a498eed494beb832055a40c67743c11b7912ea957ad37eee73da6f8293f5b23687851bfe1db48737a1aefedf0971044c8f6b503bc92a2e4dc941566c86c6525 35bef3053e6e08ea6eee923b23670babe12306416ad9b24d601d696fcdb561ec41a4d43834a3d4741beed992a522f9a4fd08691fc3aff2876922ff2400ed9e91 e4f616c9bc00dd66e9e8afa17e73e7f1e61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a ebbe7f9cc3a15816b3027df325f826d5901636279bfed175a0b57b7a1b8e26749898b8ace15a6a074639e32a324dff5924a09615694433132fc87425b9ea0c03 96874dddb311c5a5e3abd7b33499d6754759d4446bb99218370e2cc3f1c1415a84c4b49ada2d60744278d8b15a1cdba9083e1303838ea23fad91feee7a3dc1ff 7f242847b94cfb72caad3a709f02cf07dcdb46c968c52a57eefb8a648f3c3f4ce3a2fcda99763e8f5feb8466203051ec726907731c684bf4041dbdb5b1366b7c 286a76f1e875a46185643a4d9f2c97e1b390e9e4956466817f909bc05e58fbe231291691a7c987be70e1a0ab1afed1e1ba13f6455bf5a70d9dd007915e0f941c 8a148c7e2c90cc798fe030e76f591a693261320e118c1ecf656c1256caa7211dd2b2654ddcf71970d3ad791b6526020dff193fce00ecb2adfc1098edcebce9ee $CDNENCFINISH_ADV2 .ENDS BEHAV_VTHR_HYST_TEMP .SUBCKT BEHAV_TEMP_GEN VDD VSS ILED IOUT TEMP PARAMS:arTheta_j=90 arAmbientTemp=25 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 2fe021ee4920ebc0b15ff7bc901583a16bd2ab95a878d1fa9da7fb2e1c8a2cd5ed1235e971fd091cdc842572717d0327f27478dc38625a3c8aef02bec49c015e f2737d807680651bc4aaee489ce727106bd2ab95a878d1fa9da7fb2e1c8a2cd5ed1235e971fd091cdc842572717d0327f27478dc38625a3c8aef02bec49c015e 20e3127dc65b7b7088269d46b21b6d3d7ea72c4a8ac3011af5050e135dffb8e65035f1af2bb2fef9cba31d6e23f4c9fa95ef1cbc3c67448644ba7243bd85d0e1 c27d03acf02f663db9ba018ec7a6c63908bca835f546932742dafd516544d61f1732065b80b68024a1bba46fc2caacfac93a5252cd67fb4d7d9f8782895f6c72 163c6c82d00fe2c1e829286bb831e6b66bd2ab95a878d1fa9da7fb2e1c8a2cd5ed1235e971fd091cdc842572717d0327f27478dc38625a3c8aef02bec49c015e 0fdfc09ce687efe1350bfb1632a911a6d3dc8eb83089096224bd86f96386d75c72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 $CDNENCFINISH_ADV2 .ENDS BEHAV_TEMP_GEN .SUBCKT OPAMP_SLEW AVP AVN ENA PWM AVDD AVSS DVDD DVSS VOUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9ddb1d84d0a8f08d2410e01231d7cac3dd80cb67ca54386e5c762431757c65d98e1606b888de2392d61c12ab26e504f1637 b37bb30e1d4328b5b13665e742fcb5d0d65eedb57cd472315ba0d271a55f2b2b9d4160c7645f4c0c8c34982bb35bfaf62404120b6aa5f1677b1b28fddae1e0d0 8cde6e01a4f84ee59858e809083c79d12085c43b8c2037a1981f1ca91878ba99b93f44e00318e3a3b7db66fb4181fc8be04661ee30e54a9fbb7d0d475676d026 601836f2c6cf73614c0e6409ac4c1cb902ef45c075118dd80727e8557ae9017b7116a0d19717966140c3f17e07580cc102fbe9494701ceb155e913e1116d65e1 a2e012f6ec7f535428cdc24a21c0a82e6fa596fad0b4d0b1c0484e60a58dd0477116a0d19717966140c3f17e07580cc102fbe9494701ceb155e913e1116d65e1 3ad54d7a4d31de15e280c6f45c4fce6287415cdb834209ba8ff75cb8c7e6f6799ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 327553efc10baec99d9927b4623f99d02de2f44147c41760d876d8c12dbe1def7ea72c4a8ac3011af5050e135dffb8e6de0f41579f9d1603ed0b260a508d2ca0 f6f18544cbcbbf35ea93c54cc05b700879492c73dac52ddaf0022e9e6a0b5ea2e61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 64890e15247841c63e77f51bae1e2e7399f0b56ee43fc61870400e101d7cf1fede78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 b9af1d4ae47007a9853568c4895394f352f641679f389b3d04b313efd73ced167116a0d19717966140c3f17e07580cc102fbe9494701ceb155e913e1116d65e1 94d027b174c1013b00f8a4698dfb178a051cef927d34a8e72560b8c7bff7467d72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 224d7b556ffb1bbacfe5d2ed6193b3c330f0d5fc5b8e9fadc0b060661b8ee26d72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 68911a8b7526ae5fd35116eb69d2844f5f1643c14e02ef9bd153a39d7db89bb1e61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 0dcbada07dcada0540e2dc1911a5c4a318de7239899f2d708e17eb2d98ab9ef0de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 685f449d8327ac7c103c8a997e84130db4ec68f21c9213a28e705f5db20b6f8d72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 $CDNENCFINISH_ADV2 .ENDS OPAMP_SLEW .SUBCKT BEHAV_REFSYS_FUSE VDD VSS SEL_5PIN_EN SEL_5PIN_VF SEL_8PIN_EN AWAKE PARAMS:ar5PinEn=0 ar5PinVf=0 ar8PinEn=0 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 c66a114150ca33a6f5231233f053c9dd8598ba0f60b3ca4f8a0b372f0d8906feb71bc76e5d2c01eaf5b3ed4df3244a7b293bdd7a1068dbe152b6802ea66d59b0 e111c2a7aec3e4088342a6a17f7d3ef1720ecb8a7413268a9693e3ed8af8399d71b773df1858f1bcc713e037d3d60749ba13f6455bf5a70d9dd007915e0f941c 2e73eb78f44c807e6d882a20fa8f77d7b9a874b3055e308c412c7f3aac1fdcb057f4f911dd9e5fba9a1c3e5ebe993824f3b36f75cc2525c36ebca8c8909a8e55 617bc50d9322ae7fa644cef00833126ab9a874b3055e308c412c7f3aac1fdcb0d7013f68d86f68e9c9af029a2f8c6053f3b36f75cc2525c36ebca8c8909a8e55 1471b79070b4eab8b92f0fe620451818b9a874b3055e308c412c7f3aac1fdcb0a711213d5d055c9d722b9f124dd2b00bf3b36f75cc2525c36ebca8c8909a8e55 $CDNENCFINISH_ADV2 .ENDS BEHAV_REFSYS_FUSE .SUBCKT TOP_AL5814 VCC_PAD VSS SET_FAULT_PAD REF_PAD V_SET_PAD FB_PAD EN_PAD V_FAULT_PAD OUT_PAD + PARAMS:TjaVar=90 TaVar=25 Sel5PinEnVar=0 Sel5PinVfVar=0 Sel8PinEnVar=0 * INTERNAL REFERENCE VOLTAGES $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 b13c86a1d5059658fef20b8e384b5efce38cb32315e4f26f1638337148f22dc4dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 0cd33ae9a95b52968343defb8d5ef1925d0fdc54503baeaa9e9619b795554fca4027a8b175b8baac3c32a9f8e2627c85c6de02d5f48e9871ed907698af7ac098 16cca5b342db76d24f19228eda5f6251297747520395ea3e9f58bd25cf8bd82d9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 3f913966a0d36b6856d2464b8a408be1e5e0e45a6b921954bb7f23c91267620cd11b8f69441a17c2fccbe3e491c105c134b1818212a007c5d089a84b6d7f5871 65f8c71b66fd5d6fe2c389223dd91db58409cabb8fe2c9a015ea16bd970745e4e1b5e475a90deac352423dc14c92d31734b1818212a007c5d089a84b6d7f5871 50a6dbb18bc75342861f2e6941ab0333f9bc25da93253167732402fd86b5d7e7259653a376bb4ae509e5a421417a18f1fb3cbdac32193d3320e01544ab35bde0 44182f4277d17cfee56e817e04f550da13a7652a5d002c6bbfb75b0fd7ec7ee4577ddbf3cb1a8e0296f7bea265b70ca10245b0daf5dd26441522378c7bfda65d 6ed9acac35d64189a592788897b1f1ac4603d105f6ebffa9909f152e41007edbc47476de1ab9a932eda5bf339bc421bcff193fce00ecb2adfc1098edcebce9ee 40e2937d76cdfbb1e40f79ddf41bc9321b08281f818ac462ce99f8a7799dec6b2f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a f79c10d351ea31a920ad08bd44970ec5883d4d8a96e3f67642079801cca1b4819ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 37560ffc8a897158de79e5523f0d4f94cf61f90e74f77398db44c0a6b058c8540cbf39fee1642bb468fe52dcb5f8607970ab029ed563a3809cb692ff9af63337 304109156c05da688c25eac7f16a73b8e9d5a56d01cb61b4094d18d8a18bc27433015a39f64615ad8ea79cf613e6c53c4688728a85083d3582fd982e773c87ce 8a8f3f4ba7405cc668ba14ff96f598a201f16f3715f27e465039a5fbd360df84c8543703ac214a601a9b700bf57f1d3f06107970348240fef3b7e779b362fa17 d39848fbda05a05e7ac42c8c248403f04dd697483072ecc8d2995da8c5ebdd0eec1222b025fa10616853f788350a35192d984e386040445165673abad035966c 4e44da540303161f2e39c4ff87237556f44260e3647cda7856a0447edef42c220d2d5b47293f431a70cba8d714dc6472468227db2f5f7bc6506f6faa3df52bd7 4d33869ccdef1f2d69c91044b452eaed5209411427d62e7cb47b37aa3183240903245222455d075843a0213491958d4ed2eade8c8fb87af6a7933c04b6d8af74 75b42c20f4f98171c3ed339b4addc782a9d6e9035cfd407c4463503b2034423d4aca4bf40e19f31f13992025ef9a7cbb38c11569a1edc78af78dc23645fb0932 b9539a448712a87bf0ab0bddf2fda720af37121594ae9defbe6b463b178d1768582f99f057d35f3e1edb53deecefa941083e1303838ea23fad91feee7a3dc1ff e77f18bf66c31ec52cf66c43bd736a58d0b9f7d394ee5ed0c9f4293d64aebdb2daf4a8fea2e283f41764e993bbbdd303c821e4688a22abc1b6fca28fd22369b0 407047534e3c18da2af653044a77c1700a685ea62a2ea3bf5d22932fa810bd652f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 62f125d631c09b20ccd6a4195be4c3875a9fd0867e7edcaaedc3d9a95d0e7d8df62e61d699928f709e4555942b89a81d95f28468b035197b1e0bdc468491e9d5 121f97ffd99f439de4eba6763e94b4f90e6bc26aff93d323dc69ffffa0146ac9a79de7233b624125f338e7efc0fed923db1920fd8bf847aeeccf404e7c3f59eb af0295eb3fa98d83e17dbf52b4b2ac8dbe2479d50b1aa9a2def9a0f86cfa8bf83c445be4921629a7706c463159d4759978b5e762bde405dd5ecaba36d1d4044c 406257312aa2590a67043d3a4a849acbfadc44e95b6a0016e7790ae757b46026bf7cf9c8c0a0d5deb0a8cbbb6bbf1bb089633a320f63931b7c4bb3afb6f75482 973fbb817a5c6b18d4dcfc6399d5d8119924321a1487fb3a11fd8a03ee93cb2b8e72cfb9db3840c7f1c2aceee0292d54083e1303838ea23fad91feee7a3dc1ff 4029b17456d1fa296b1302c0a941f85ddf0312452ebe46b8172156122ec3b9852f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 12f0f2801b9608d3c1f0cc4b9fc325bbf093a625bf11d6b68269ade5536e020a52f641679f389b3d04b313efd73ced16db1920fd8bf847aeeccf404e7c3f59eb 0dc43a8702af797df3b51560d88ca73ba2c0fa271927edc9029b58138022458355cb13929e15668d17e76d0a31eec26834b1818212a007c5d089a84b6d7f5871 d4193cf59edfca856ab9cc068ca3a6947d4cd7ff73402c2c946035eaf0d454b1a7092fcfb4122b1b6ad67b53c6ecdca501df65f12242c198d641aa179ca8c82e bffc25fc793ca80dcff62c91f4f16ed8bcd0327f37297c751925f9b8550be3e4001694d2451c576e337d589f9f9d15c86fe0b517159d859082c7d2de9540f75b bb9b30a7a1910269b258c3612cc70dcf7ea72c4a8ac3011af5050e135dffb8e65035f1af2bb2fef9cba31d6e23f4c9fa95ef1cbc3c67448644ba7243bd85d0e1 83136f93efef522786c7c17d1910412245973e95febaec2e13b1e630876e43c567592b20887d4f2ab3f21c0a1b43ea8d3c5bac3cfdaec4b29506375326ee5471 546da40a20d02325d07b0754f13d25a9de586abead0c91b5c5ebc75d334dfbb9e79f6869976a40b12ec1e5d81a4433a95372c453ef93471c4734032055bb0962 0c0895dd1850bcf75c0600e2bb68db1f9d90f91a96d1e13d609d953b49e6428830d35a6c661de4ef1069a2fd58d615f75959b2f24d60d1617110464b22597053 33a4d8236d5fea6cb3dfb670540e2738a7fdcb44547c3bf3874abbc95a30aeb6f3de955b2f6966a8315b8a43c0355d62ef27089e0532fba7810d6dec34c4e687 2f9313824791ebfe1fd87050d435d75c4aca4bf40e19f31f13992025ef9a7cbb8dcde3b3d4d915213360adef4b11aed754331a4b566a0ded4bc9d788b35b5973 b5272af1ae54c2b3a9c28f23653599cd0b94b9b0879ae9b234c12616bf619f556d2485b412b6d2b33b192eebe3ab9000ff193fce00ecb2adfc1098edcebce9ee e9530056431a065d090c465d74758654968d3a0ab5502ba3fc18768aaa7b70ce984b0ed9ac790268a9f5053ef09e361f3d0e9cbcd3a004a9e256e75843b64421 78eb37bd10671d445e1b54f3556512825990712c8ab82c757cdbfbba993f6c801fae1fe4462b868412423be1f3182cc4fe5258584c170fcb5fdfaf98add13905 5fe37d3b00c548500861e70c6ab96fe60cbfac9427bd06e393577917a5a92609fd2f12ee88ab621abc45b6e6d0d25dc5c492c6c8aa45845a1660d0d04a012644 688a116e56bac7bc82a1adb1b8ac7f686d66535b717a58059aeeb8e949455b836522d05f28f5c74a271558bf99e7051e2d984e386040445165673abad035966c eabcb037c2adc3e621b71c241baf2d66d4f969c9cee8ffabf926190d3d5c3239fac83f1184e3a82f4e1da1618fbf7e894ba184767b04da735a2601f4835169f3 6d363e3278ff62969287c9da8b69dfdfde8a2dc48b1a7d3f69bdcd064275706d8281076424d3530b4b7ffb1c655e0ff0a71e69027522123ca7470a731eda47d2 9a7b47f95f9990bfd881d2e18986b07be0bbe86187eee9b14c64b5dee5f5d51872ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 f0de08da966d40726b72a7c0d085115981a9de3d33e38b0f58d3c0505119aa517a693b3f98696629a08dc9268533f6b2f7fe1d9954730d198466108165fc96ad 75a9b963246ba8915e018a64ce49af26747137aeca3cc3518d52aae389e69343e86da5703134e41a0f22498d7f143d1934b1818212a007c5d089a84b6d7f5871 6f95d0f096c335935f5b8a6cf8711a959e2929502fb257bfba253c4c9420343ac5cdaa627d5925a09805c73928c7b52cebb0a0c23ea29c78bed2ed8b8b8ce921 1a70135b64229bfb302c0680dcab350f0c1fe12af36086be1745e17adc48bfdade78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 8875eeaa02a878028b5d6c4d0eb20527f6afd0d4096d8febca4802c1f9668f675990712c8ab82c757cdbfbba993f6c80cb86852dc9e82fdf9320384923714685 c0fd8f1b24fa26485a3a8f5cb680e66e3c099a099b49ad758216875a6b6c3d0d037e1f993663bb22839a9adf54d88e2bd80f2e0686c54429314c999a7d55d1fb 07bb7c8ded7669ba0bb66fabcaaceccd5a55f04b7bfe2f4e67d41a5b71952809c40cdd98131bf63b5fe4d3f7f793f88ae6b845667d95ffecade32a681aab647f 430f50b4bc452a5199c15c4058a6cd5d3d54101e6be2f6862c4f545a93195bf3e9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 ee7618e90b475f2fa36c0df1ceb2f3bb2ae03b642ca14814e09501d200b822299bf7961e84119b3911d7d51d588935dae100b1eec337f2e4c0a14938105851d9 13499fcd54c56c4528200433024b186c6bd2ab95a878d1fa9da7fb2e1c8a2cd5ed1235e971fd091cdc842572717d0327f27478dc38625a3c8aef02bec49c015e 1be332166e547eee18a9abe56c4f0343ed9fd8075e2eee5543747c3318eb2a334aca4bf40e19f31f13992025ef9a7cbb38c11569a1edc78af78dc23645fb0932 92a2db20fb29f65023a80c7ec478c3d1fe50b069c7dfeffaedec8cf7a2485e4d7ea72c4a8ac3011af5050e135dffb8e6de0f41579f9d1603ed0b260a508d2ca0 94e55319aed85665e668d2c65b60993df93c472d2ced5f2f8e9967ef3dbae717de78dff9bfcad1fe8e9bedca6029d2c651a4b925629e624ec8cac3ae47d95c94 $CDNENCFINISH_ADV2 .ENDS TOP_AL5814 .SUBCKT AL5817 VCC_PAD VSS ENB_PAD REF_PAD V_SET_PAD FB_PAD V_FAULT_PAD OUT_PAD + PARAMS:Tja=90 Ta=25 Sel5PinEn=0 Sel5PinVf=0 Sel8PinEn=0 $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 498c281ccb083b0c0e55cf0230437a75420d1149c3e0ccaefce68dbb31530fa4d539947cbac2ee91dea2843de03810ff07c149acb36a0c82a57f92d59795c1d5 931eb4cbf6548565c600dcbbd48980b1e765f8a481fb254e0602a97963660b0dcc2499e9bff044ceaa0059f060bb578bb42ebcf5416f3dd2956eb64ec3fcd65d 8c51d4750ecd55088423eecd03cb93424603875f675a5f5451e4da05dbb2d1587552b98b333bb3f20bf355c626b5e067e6a05fb627c4b37026ef6e961b9500f4 88d6cb2c3b70f484375cd571af15763fe61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a 11f315fcb28e0535d5ee304d59fd0103999bb2dfeb302211717ed9a8c00821952f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 16629dd40c434d81937539d504c81e9687415cdb834209ba8ff75cb8c7e6f6799ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 14af3039ad682c28c791944b5d8aeaa0209b8baad5240aa0ff95e468bbc742f466eac7971c4f10b30998620f154f789646711ca7d7e57b70f18fc7e990649377 74a49953508548e27f44e61bfd774a9487415cdb834209ba8ff75cb8c7e6f6799ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 066154e35611375de41ff12f9d9afb9729866924f425906714f83a66409393e94027a8b175b8baac3c32a9f8e2627c85c6de02d5f48e9871ed907698af7ac098 2a5f17c78f268b1a2840dee30ed2a3fa87415cdb834209ba8ff75cb8c7e6f6799ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 440b27681ce3b1c6da10e09a959d13680506929fb7e4eb4945538d4b501e37249d90f91a96d1e13d609d953b49e64288d9e0913a0ef3c1bbd56fb81ed733e8aa 9044f2ace17729c28156f81fa3d4c6f48d73009e8199f146d89d89b8860e6bfa2f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 97dd084e6c068cbf65789583f7a57e3c87415cdb834209ba8ff75cb8c7e6f6799ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 3b49fb5f8dc29202c89753ccf8c2fdcb4b8440e5d772898d41aaffcad02cc848e61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 758668214ee91bd34efdb62258804fe5ff8d1b358a2d90e4012cac9ef6ceda9db61ce6406a84888f0251757a138bb23686e465653e28c81035609204733418ae 0fb73c3fe943e8b4692b8e1f75499c6a7ea72c4a8ac3011af5050e135dffb8e65035f1af2bb2fef9cba31d6e23f4c9fa95ef1cbc3c67448644ba7243bd85d0e1 7114bfeac982282d320add93945cce45bafcc01c8b57a8bf88f65322c704a08a89e04ccdeca1623335d502fc7a2dd8f7cb8974ea1c77f981da4fbdc9c587f18a 3e0ead198e425e3a51f56806b2774f260e6af1e8f07f78a69719571079d6c89ae9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 d7888ab1c595ca0f15778ad6d15b66b5ff8d1b358a2d90e4012cac9ef6ceda9db61ce6406a84888f0251757a138bb23686e465653e28c81035609204733418ae 44db56b0f63fc16080a61c0273f8d4bd66eac7971c4f10b30998620f154f78960f662bbf3ff7b19f4a72e15419fb22c5340e61db34fe66f3a57e1696412191c7 2eb7dbcc1e30467782c82bcbec1051de6aa3acfc3c73c3e5835447060ecf4c996bd2ab95a878d1fa9da7fb2e1c8a2cd5b08cab501ed934118a0320c3cfa1bc0d d626c05c9b7c05e5275645816d40a3cce61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a 57f1bd03a6af5ad14513142d5c06de4487415cdb834209ba8ff75cb8c7e6f6799ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 7a7c3df3a3f195fde9d999bedfec05fd6bd2ab95a878d1fa9da7fb2e1c8a2cd5ed1235e971fd091cdc842572717d0327f27478dc38625a3c8aef02bec49c015e 365df52ae3a7aa16df0aec200f37f6780506929fb7e4eb4945538d4b501e37249d90f91a96d1e13d609d953b49e64288d9e0913a0ef3c1bbd56fb81ed733e8aa 29820dd5a67b382bd0bbc4d6262b6f696bd2ab95a878d1fa9da7fb2e1c8a2cd5ed1235e971fd091cdc842572717d0327f27478dc38625a3c8aef02bec49c015e 5a29595f94a30dd8e0dd33d518e03e28094aa781e0ecfc5c646145577d5afc2d4aca4bf40e19f31f13992025ef9a7cbb38c11569a1edc78af78dc23645fb0932 a5561e9abd897d6df2e418bc07c7c4d7a79de7233b624125f338e7efc0fed9237116a0d19717966140c3f17e07580cc102fbe9494701ceb155e913e1116d65e1 3fe1ffd451565058a87327377ae6248aff8d1b358a2d90e4012cac9ef6ceda9db61ce6406a84888f0251757a138bb23686e465653e28c81035609204733418ae b701ccb42d43c16baae8217fd507bf4066eac7971c4f10b30998620f154f78960f662bbf3ff7b19f4a72e15419fb22c5340e61db34fe66f3a57e1696412191c7 $CDNENCFINISH_ADV2 .ENDS AL5817 .MODEL BCP56 NPN $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 d4cbe0c62df2cad59b1e45988cdeda4ed74526f928c00affa90f5cef74d33ead6fa596fad0b4d0b1c0484e60a58dd047db1920fd8bf847aeeccf404e7c3f59eb 86e6718ce693d8aa4fde7eb7526604ff2772300722753ccc2a262abba17cf856ccd531611823001552af23d374258f84d5f97992b509e0e24d98d1a62dc43c06 3ea3db14bcf19e5cc52be965a744e11a8e5e53ef04da41eeaf87af327c2da1c6eb9066ac6e792bb624b9ec4020804bdc76d9285d79f6b98bd435d78c4c2c0d7e bba02babd62bd845edf32fef31e16069b891ab108120e4368828f42d2a8e57d985525b57f6e09d7f6a0f9c8c706ca91a11c1b99c25b9940b59de6340088fd25f 4b18924fbd82417a81af9cc8776c5627f2004de1fe3328183acb99c3201c1f013a88dba75b4138cddca669839f0e739993facf4886dec637969352a2c936ebf0 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL MLOAD NMOS $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 7eeb9c0ed81c009e5c85f2d161da370fdbb34d93fe1e0d2465d31b0f370b0b062f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 670a7dc18237996c9cfe8aefcc5690b0115145aa7cb947477a3495a61a51ac4de9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 $CDNENCFINISH_ADV2 .SUBCKT LED_8V IN OUT $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 964ecaeb5607f1ba9295b40ec73e968a4aca4bf40e19f31f13992025ef9a7cbb8dcde3b3d4d915213360adef4b11aed754331a4b566a0ded4bc9d788b35b5973 5e1604529d7f2a48d2f1e70629fcc1d7e61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a e1241ce8881172a9f81c62a19ce60a4ee61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a 5467c2851c36ebe3acca1ee2ef9e5eb3e61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a 8ea6b42e4b19785afaa0cf44390f272fe61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a eaea13824faab259b3b241d9d14e12b1e61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a 9818535d7895627e0f17af07a1d19421e61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a 2a7a7dadfc0175ff1142924801ee5f3de61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a 53411dfc14d4f3cabdc66726f7b565c3e61d088c70436c7a67f7a4d4e1f712eb83f7fba23a0ecf5de8fdb364d6d84aa6b0194d000b1144a78d0e154c02e5b88a 0789104cd463aba4c524aad5c18530b8de78dff9bfcad1fe8e9bedca6029d2c665902cecdd37b74fa939300f1931cf53e6fd2b0ca8fd00cd3512c4452e52cb9f 5c8e61db545938b8fffc53e8e3705d6c84cfee839581674ce0bbe583ca91e01a7116a0d19717966140c3f17e07580cc102fbe9494701ceb155e913e1116d65e1 781b70ff966d271b52c7201aa01ffeb9f8e10b9f07a31c69a7de480aca3f43cce9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 $CDNENCFINISH_ADV2 .ENDS .model Sen VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 c9b0641a35c857bb3789b3e21ebc4df11a76320de8cc15749d9f8674755ef5dddfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 f8730028c5d3490486715d64987d57a7507f35f55b67874f33caf8102ffeed14e9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model Smod VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 56cdf838d91a1828b2f10df2f5693def52fc45e1a32ed2cd73dd3407460635fd72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 97e1b4d74bd0d8fcd286ca8d480bb882d46e7e79701342709098ad7d9a83e50be9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model Sout VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 37626a38a57a7f38a80219a57bdb73434295c4b4011d3ec664bbecd1c18597e99ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 5f08a29b23de343e5cf4e03543971a45d46e7e79701342709098ad7d9a83e50be9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model Spd1 VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 23bd934d75f2e52fa087b3879c1efcde4295c4b4011d3ec664bbecd1c18597e99ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 5f08a29b23de343e5cf4e03543971a45d46e7e79701342709098ad7d9a83e50be9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model Spd2 VSWITCH $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 65f81053bf4be1a9de744cea9bf3c23283514c7a775db9482ef6a539890dd5fa9d90f91a96d1e13d609d953b49e64288d9e0913a0ef3c1bbd56fb81ed733e8aa 5f08a29b23de343e5cf4e03543971a45d46e7e79701342709098ad7d9a83e50be9d5a56d01cb61b4094d18d8a18bc274e9e47e341cacc546d72e2c9112edd848 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model Dsimple d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 8ac03806a6d6f724c8473bdd52339dce6bd2ab95a878d1fa9da7fb2e1c8a2cd5ed1235e971fd091cdc842572717d0327f27478dc38625a3c8aef02bec49c015e fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model D74 d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 75460640a3186b4ff39d254f7527cdf7b56870c0eb97140a206e3084eaafcdfb5990712c8ab82c757cdbfbba993f6c80cb86852dc9e82fdf9320384923714685 fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model D74CLMP d $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 646799414338b0c9354194d5b70aa7a640cda685f9554308f48bd6f1dcce3a924027a8b175b8baac3c32a9f8e2627c85c6de02d5f48e9871ed907698af7ac098 fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model Q74 npn $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 24ffa71e874d149a10b2c92ba5c8716d4412f02ac1d0273f6ccee50919fe2ac09ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 746924b950a2bc290a4e53b0267d84b84aca4bf40e19f31f13992025ef9a7cbb8dcde3b3d4d915213360adef4b11aed754331a4b566a0ded4bc9d788b35b5973 cfe965f35139ba298051e2d8f8f3da6ccf2bf828b17b260aa6f37f75dbcf02e5dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 0eef750c1b08bc7410ebe4be9da9754f23db35ed6e1777ca169009072181d580dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 e775ad024035b735dcbc5ed1857829e84c552c202d439a6433af97ee0685117b72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 811290e6cbf6784ed54a134aac29accf4456f4773f034b4a9291fa804746bf27dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 b2ba60de915f7a79394f2e6b45f68e6e3b21143667093f0d8c4178d4560657a872ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 efe68e5febac8dabb5bfd782b5d9d7b8de78dff9bfcad1fe8e9bedca6029d2c665902cecdd37b74fa939300f1931cf53e6fd2b0ca8fd00cd3512c4452e52cb9f 607b14f672be7a8c7149243f748f81434027a8b175b8baac3c32a9f8e2627c852e92544183e7867bc4d641b95f4c2e40c35d659188fd1d94f6ae9a46b92ce26b fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .MODEL T_BUF UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8c5fca51e5245ffd11802a837695e693e9d5a56d01cb61b4094d18d8a18bc27433015a39f64615ad8ea79cf613e6c53c4688728a85083d3582fd982e773c87ce 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef52150a4445e118758c27feaebfa68f642b4fc083e1303838ea23fad91feee7a3dc1ff 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c2111a4445e118758c27feaebfa68f642b4fc083e1303838ea23fad91feee7a3dc1ff 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_BUF1 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8c5fca51e5245ffd11802a837695e693e9d5a56d01cb61b4094d18d8a18bc27433015a39f64615ad8ea79cf613e6c53c4688728a85083d3582fd982e773c87ce 2c59efc8237a0898d382be2ede8701a595041c97a76684e910beaf2f6a1c0d8926ea52a8065eed569c0bcb4e29069f2601df65f12242c198d641aa179ca8c82e 1411fc0582296e9e4300da8fa2d82e92f16beaa3c636f4024c334542a7664b07d6f73a6a2d14b728ac8c23004fd379e9917e92b26114e98ed89a0f009cb49a8d 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_BUF2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8c5fca51e5245ffd11802a837695e693e9d5a56d01cb61b4094d18d8a18bc27433015a39f64615ad8ea79cf613e6c53c4688728a85083d3582fd982e773c87ce 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b38147c724c24a5ee6d07feb451402f10d2d984e386040445165673abad035966c e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c0278147c724c24a5ee6d07feb451402f10d2d984e386040445165673abad035966c 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_NOR3 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b38147c724c24a5ee6d07feb451402f10d2d984e386040445165673abad035966c e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c0278147c724c24a5ee6d07feb451402f10d2d984e386040445165673abad035966c 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_BG2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 e6111e304b7b0483e1347fd711c855ce7314896fe405611ac89677aadd176d95761971c8775702ea8639e18f930961592d984e386040445165673abad035966c 77582d186faf9f922f6138d14bee2b5d53aab8ccaf3361b70732a55a922f27d6761971c8775702ea8639e18f930961592d984e386040445165673abad035966c 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_IBIAS UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 9c64b132a42898a08d0377db7bd4576c3ec70c319b72b2d6ed30dceec9b35d7ce2be3320259a0359c2c48a0c2f2e63b22d984e386040445165673abad035966c 62d2d1cfaa8d3bd5e0cfaa3a71c0a2e17a3a3600ec8bb118d56f460889a45a63e2be3320259a0359c2c48a0c2f2e63b22d984e386040445165673abad035966c 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_ISNKMIR_3ISRC_1ISNK UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 f0faa082395d5e3eeb8fe11e07469b9f948d4612f5ff8d9681828a6fb42bbfa599b645cea2600ddae2783973560778d106107970348240fef3b7e779b362fa17 dc9c49c59370aed9c937040175edd0c235fef9707227ce615b983b6c718615ff99b645cea2600ddae2783973560778d106107970348240fef3b7e779b362fa17 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_COMP_DEN UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 cc968e09d3f08b09bf3213b351baa16a6fd7ee29bdaad8d615b26b4798663750874dd87865c70bacb170004df2920f4106107970348240fef3b7e779b362fa17 5edc4278cf942a1dc268dbff37b837cf3dea5cde435a702813f859224a446ddd874dd87865c70bacb170004df2920f4106107970348240fef3b7e779b362fa17 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_VTHR UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b38147c724c24a5ee6d07feb451402f10d2d984e386040445165673abad035966c e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c0278147c724c24a5ee6d07feb451402f10d2d984e386040445165673abad035966c 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_VCC UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 f73c26f36e898e81de2893d9ff7a8aa96af3cd573a9290181dbd4af508e14fe58db688de76d55a8686c2936588fb5f0001df65f12242c198d641aa179ca8c82e 7aa3578626ed56763645cbc0caf4e54e9930d2c3c4f516f9ff61607bfee470270d6ab3dcea2246fa1faba759ad8dcd0f01df65f12242c198d641aa179ca8c82e 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_VFAULT UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 9614c8b26c8aaae2fe0b9359a6692faad6f976a970547953643f76097a1720f6fbedaded4a925760ed029437bcd018cc083e1303838ea23fad91feee7a3dc1ff 1aa05dfabd8cc1863c46f52d29dd985b98e19709b0f06018e259ad803e50ac88fbedaded4a925760ed029437bcd018cc083e1303838ea23fad91feee7a3dc1ff 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_VTHR_HYST_TEMP UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 0eb3ff7f1a6ac1e3f229c96db650a0504937f467cab25ff0323efccddc8777b38147c724c24a5ee6d07feb451402f10d2d984e386040445165673abad035966c e0388fa8ccfdba42be8964dd7cb9e90453a21de6042b889089e574d11135c0278147c724c24a5ee6d07feb451402f10d2d984e386040445165673abad035966c 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_ISNKMIR UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 4a0bc5fdba9f65b841c32da58b20cbe66a507b4839199c775889817a20825d16fbedaded4a925760ed029437bcd018cc083e1303838ea23fad91feee7a3dc1ff 1aa05dfabd8cc1863c46f52d29dd985b98e19709b0f06018e259ad803e50ac88fbedaded4a925760ed029437bcd018cc083e1303838ea23fad91feee7a3dc1ff 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_SRFF UGFF $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 65d36f6542c7047860f7993459a746aa6a7e0b9139dbee8b5eef1fc0ac7176be535acf3f5d76ab3834218c1bab2e84e106107970348240fef3b7e779b362fa17 a4d398c7d8b82997fc8228d98eaa2bbb1fda409fdfcc8182cefbdf39b9213e443cda420f8e6c6993a689bfdf7ba9ce9306107970348240fef3b7e779b362fa17 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_AND2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 8c5fca51e5245ffd11802a837695e693e9d5a56d01cb61b4094d18d8a18bc27433015a39f64615ad8ea79cf613e6c53c4688728a85083d3582fd982e773c87ce 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef52150a4445e118758c27feaebfa68f642b4fc083e1303838ea23fad91feee7a3dc1ff 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c2111a4445e118758c27feaebfa68f642b4fc083e1303838ea23fad91feee7a3dc1ff 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .MODEL T_OR2 UGATE $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 6a7ef3db08c61e83a571ccf5ef9d1e410459b08c58a4dc93ac5845f69ef52150a4445e118758c27feaebfa68f642b4fc083e1303838ea23fad91feee7a3dc1ff 4b08f3e01f6f4bbc6eed024366d1a43f724e00f41c1af66c7ffa70dbe13c2111a4445e118758c27feaebfa68f642b4fc083e1303838ea23fad91feee7a3dc1ff 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .subckt DIGIFPWR AGND + optional: DPWR=$G_DPWR DGND=$G_DGND + params: VOLTAGE=1.0v REFERENCE=0v * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 70377785674f05234daf157ce38e73dacc908f23d1304d55d0451a4ac0fc9e7a6bd2ab95a878d1fa9da7fb2e1c8a2cd5b08cab501ed934118a0320c3cfa1bc0d 1c1ddb44ec313d3673f794b7e42d77d4e513606b7cc939210d41f534a6f5c8329ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 b2c4b22bf92115676670c11196a31e916f01d0dcf60bf6ce91e1f8f148192a6e7ea72c4a8ac3011af5050e135dffb8e6de0f41579f9d1603ed0b260a508d2ca0 e24b75f0e895f2a6c316162f14db3ffde513606b7cc939210d41f534a6f5c8329ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 $CDNENCFINISH_ADV2 .ends .model IO_BUF UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 03300390c8e0e4e1a63fb6c35abd08fc0dae97554cda9cea8813c2abd4a0f29e9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 7c16d8fdefe8a20216c2c03f6156410c5c068d439274f552ba6d7c89c95ac4dcdfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c302f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 3a6ca6e84b627c061842952a30c31f6f9e95d4ac7dffd646ee1023e87285bb7f9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model IO_AND2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 03300390c8e0e4e1a63fb6c35abd08fc0dae97554cda9cea8813c2abd4a0f29e9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 70ce328e1544baa368191b1b5d90d31ba6b3fb816d93e5d22438dc049c93453a72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c302f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 3a6ca6e84b627c061842952a30c31f6f9e95d4ac7dffd646ee1023e87285bb7f9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model IO_BG1 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 03300390c8e0e4e1a63fb6c35abd08fc0dae97554cda9cea8813c2abd4a0f29e9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 7c16d8fdefe8a20216c2c03f6156410c98f099a5b1b4f51ff4fc0bff1cbcbfa3dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c302f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 3a6ca6e84b627c061842952a30c31f6f9e95d4ac7dffd646ee1023e87285bb7f9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model IO_BG2 UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 03300390c8e0e4e1a63fb6c35abd08fc0dae97554cda9cea8813c2abd4a0f29e9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 7c16d8fdefe8a20216c2c03f6156410ce0aa81be6d540594ef36b9f4dde704c7dfcae993d00df03c4d28e920212eb37e7a44b58a000d16e60c7c465ae78bfb49 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c302f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 3a6ca6e84b627c061842952a30c31f6f9e95d4ac7dffd646ee1023e87285bb7f9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model IO_IBIAS UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 03300390c8e0e4e1a63fb6c35abd08fc0dae97554cda9cea8813c2abd4a0f29e9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 2fc8261cdc2e6c5c7af70d72bf057dfcce676fe1a326b6a3283d13d7c99f3e6e9d90f91a96d1e13d609d953b49e64288d9e0913a0ef3c1bbd56fb81ed733e8aa 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c302f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 3a6ca6e84b627c061842952a30c31f6f9e95d4ac7dffd646ee1023e87285bb7f9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model IO_ISNKMIR_3ISRC_1ISNK UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 03300390c8e0e4e1a63fb6c35abd08fc0dae97554cda9cea8813c2abd4a0f29e9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 2fc8261cdc2e6c5c7af70d72bf057dfc5510f23cf7ec62afa2dab22cfeac86da9c184a2fad90aafc7e46cfb139ca1a2ccb8974ea1c77f981da4fbdc9c587f18a 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c302f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 3a6ca6e84b627c061842952a30c31f6f9e95d4ac7dffd646ee1023e87285bb7f9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 9f3a9c0ee6bd3f63ef05005e4977c4789d90f91a96d1e13d609d953b49e6428830d35a6c661de4ef1069a2fd58d615f75959b2f24d60d1617110464b22597053 $CDNENCFINISH_ADV2 .model IO_ISNKMIR_1ISRC UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 03300390c8e0e4e1a63fb6c35abd08fc0dae97554cda9cea8813c2abd4a0f29e9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 2fc8261cdc2e6c5c7af70d72bf057dfc2809490dfc42ef27187069429d560caf7ea72c4a8ac3011af5050e135dffb8e6de0f41579f9d1603ed0b260a508d2ca0 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c302f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 3a6ca6e84b627c061842952a30c31f6f9e95d4ac7dffd646ee1023e87285bb7f9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 9f3a9c0ee6bd3f63ef05005e4977c4789d90f91a96d1e13d609d953b49e6428830d35a6c661de4ef1069a2fd58d615f75959b2f24d60d1617110464b22597053 $CDNENCFINISH_ADV2 .model IO_VTHR UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 03300390c8e0e4e1a63fb6c35abd08fc0dae97554cda9cea8813c2abd4a0f29e9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 17d6ead946fc736a47552e5b2ad082656dd3e2aa61f683db69adcefbb3702c2c72ad585707de5754f63f2c90cfe87e0b9cfacd2da128b369ef26dc67f0357d98 3fe3348308b0d9e04a82b05158a8dd311e8acbfa19d9f9c4f30728ac14283c302f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 3a6ca6e84b627c061842952a30c31f6f9e95d4ac7dffd646ee1023e87285bb7f9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .model IO_OPAMP UIO $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 03300390c8e0e4e1a63fb6c35abd08fc0dae97554cda9cea8813c2abd4a0f29e9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 db6d7107abe5555dccc5641b42122ed7edd85b9e4cb140480d78fedd4598615c9d90f91a96d1e13d609d953b49e64288d9e0913a0ef3c1bbd56fb81ed733e8aa 3fe3348308b0d9e04a82b05158a8dd31360da5fdfe7eca659afa58dd4d34a5982f110c66ac782d6fceb67f26e8443224a3bae6e699b6fb984fa83e091e626c1a 3a6ca6e84b627c061842952a30c31f6f9e95d4ac7dffd646ee1023e87285bb7f9ccd286a6f54934d896608d2d7bedc2092957e5f766aa67e6a427aa1bfcc0a59 01d5c822c5745c7cf2373735a06c87d2dfcae993d00df03c4d28e920212eb37e74a23faad1e6049404811c1bbc1220edd9efccfff1f7a56e5fb67408ac65a734 $CDNENCFINISH_ADV2 .subckt AtoD_AL5809 A D DPWR DGND + params: CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 81798e61699ab02189083ab13e6d23497dfcd52a4b4d84cdf20f7579edcf38e2a23e2558f8721fd6614682bc138a5a0f2d984e386040445165673abad035966c 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 744bbcba15dc700be6ef0aea79492e69dd102c55bcac174384a590d38dd120e07116a0d19717966140c3f17e07580cc102fbe9494701ceb155e913e1116d65e1 290012be5be89f16e1cdc618f9274a602f110c66ac782d6fceb67f26e8443224a5924526c72de94621b496f55a5cdbfeecf9a0e227deb9e8443c4c7bcc055bcc 711ba2718a2b2343d976302afccefd2d4aca4bf40e19f31f13992025ef9a7cbb8dcde3b3d4d915213360adef4b11aed754331a4b566a0ded4bc9d788b35b5973 e3e3a17636109a425fe6c7a27dc6248966eac7971c4f10b30998620f154f78960f662bbf3ff7b19f4a72e15419fb22c5340e61db34fe66f3a57e1696412191c7 cf1f8e6894087e088372f392652313c8a52f24cbf6f7ec7605ad9a0b675182736252ca3509c725a727537f2ee25377db3c5bac3cfdaec4b29506375326ee5471 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BUF D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e108bd2ce1b36e530c38209210a485ba1f8cb43bb598684d5b9a23ff1d2d4c5d06107970348240fef3b7e779b362fa17 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 $CDNENCFINISH_ADV2 .ends .subckt DtoA_AND2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58e1783020f9a0485f2656917dda112d07d06d45ccae46cbfe583ac37a97b3fc2234b1818212a007c5d089a84b6d7f5871 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG1 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58c9210d1e2cf931321f16a206999813e448cb581299e117da7294c7b937cd551306107970348240fef3b7e779b362fa17 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 $CDNENCFINISH_ADV2 .ends .subckt DtoA_BG2 D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58b7267e464f45a71e479aa92874c1909342c0951571f48c2f46d44a1e4be86a8406107970348240fef3b7e779b362fa17 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 $CDNENCFINISH_ADV2 .ends .subckt DtoA_IBIAS D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee586d6bcfacafaeb99f3870bd828317f4df9e88ab8b0859f60527722dd7922b8129917e92b26114e98ed89a0f009cb49a8d 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 $CDNENCFINISH_ADV2 .ends .subckt DtoA_ISNKMIR_3ISRC_1ISNK D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee58c71791773ccd403672e164171d5ccd6970911c28f3cff4e1bc8abacd4b91d544b5b52e00a33c9d05afc7014e91e6cec2 0a685ea62a2ea3bf5d22932fa810bd652f110c66ac782d6fceb67f26e8443224a5924526c72de94621b496f55a5cdbfeecf9a0e227deb9e8443c4c7bcc055bcc 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 $CDNENCFINISH_ADV2 .ends .subckt DtoA_ISNKMIR_1ISRC D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5804ed2c4cb41bb4c083460f8ab2ca72806c440ee8d1889ebea6d3133bb2eb55bd800edd7d4058f2ba17167ac0e5fdd33c 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 $CDNENCFINISH_ADV2 .ends .subckt DtoA_VTHR D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5810523ce55cb93b436be2b2d8663ffba4ae78126153a75e5820d8d40750379f2034b1818212a007c5d089a84b6d7f5871 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 $CDNENCFINISH_ADV2 .ends .subckt DtoA_OPAMP D A DPWR DGND + params: DRVL=0 DRVH=0 CAPACITANCE=0 * $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 32712e2cee808592b7218890a0d2ee5810523ce55cb93b436be2b2d8663ffba4057524b8e0e12a817eaee5978a8829d301df65f12242c198d641aa179ca8c82e 175fc3a8a77b975e5cc674dfd5f3c165eb6ff1aff771ae69ed89d6f5efaa585ce61d088c70436c7a67f7a4d4e1f712eb77f7caf506f7e0d28319ee03ec4b00e0 $CDNENCFINISH_ADV2 .ends .model DO_AL5809 doutput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccfba357d479232a29d3d79e344cb27a5386d7323752c2dd6d07c8a0fea0dff0342083e1303838ea23fad91feee7a3dc1ff 165f20c6fa9cb4dba9b14dfa1689dc99c3df6386a3339466ba48aaf291b85de34aca4bf40e19f31f13992025ef9a7cbb38c11569a1edc78af78dc23645fb0932 fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model DIN_BUF dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccfa5d44d5e1e28fc5082900b8f6666a9c23acd88c493494f0c6311e0a3e081e47cce29f0068d4b5472fc7446da0191f1f7 165f20c6fa9cb4dba9b14dfa1689dc9946eddc61fe8ff49b8cbb3037bd55b82cc045592868568662b475d9dae1980a98ce29f0068d4b5472fc7446da0191f1f7 56f51c7fef73e3778fc998197e8f059d949c333bb2026d1f782766bd6cc9ce804865802e42a3f8098774232520cf510d917e92b26114e98ed89a0f009cb49a8d fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model DIN_AND2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc9956fe1ca62344fd56ae042db09a115f722dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model DIN_BG1 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99a073dc84f6a321402fb74ae451cdaec92dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model DIN_BG2 dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99730d3ab9cc0f6d4c201888dbdab181792dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model DIN_IBIAS dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccfd5618f378e6a05cb59cdf9fffce17ac188fa77ed59f2f51f0054a3668eccf51ba0dda0b9f0ff7c00075c4cf7d1cea719 165f20c6fa9cb4dba9b14dfa1689dc992bf4a49f2c92bf239b558ae18feabb803a8a3ced46310555395fb71d02bef5bb077118ed39d46ef67ee8796d8f63b5e8 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model DIN_ISNKMIR_3ISRC_1ISNK dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99eb84f847c2f94d62d13318eecd6debb9fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model DIN_ISNKMIR_1ISRC dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99e2be111508fc4b11b46c6cc479bd7970fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model DIN_VTHR dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99ebeab298200f84d4c013ad1974f2850f2dae21661e802dba7e94705c0475d536c74a6cf4910b2d9240254d7e943010aa 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .model DIN_OPAMP dinput $CDNENCSTART_ADV2 17f62b1fb318c25603aeb85644ae98a5d179ef807807791f6459efacb9d7ffc35a73a37243d4cce46a460e928d7c8f9c39ee99122a9d3f96f7d47fafa32ba578 bb866b53c77bbfc5f73cc49bc8c099987116a0d19717966140c3f17e07580cc1efe3ea85a41ce0ca364663fd35110922732af2a88de0999cfaf3767c50877a79 234f0b207005e7ab13fdbfd8b1877ccf79cbb78d1127cff9782ed78870af440bb04531754ff749ad8b025ad1aef1974b6652359383b676b8ad6417b887268980 165f20c6fa9cb4dba9b14dfa1689dc99eb84f847c2f94d62d13318eecd6debb9fa6d676d32509e8051d56e97521f08053c3a9130d49e52a2423e28329ba3dee4 56f51c7fef73e3778fc998197e8f059d216c84197569d5a23ed22479561e299e51cf3cc7721d35acb77a928ee3166d0eabf83b344356c9d93336e31ffc8352ed fcc9b6b8b5ec5f15c409945db8b2177972ad585707de5754f63f2c90cfe87e0bc2ea2e5fc0a5507268c6286712bd0fc49d4157258ac66554689ef0651d8cefb7 $CDNENCFINISH_ADV2 .ENDS *TITLE=AL8805 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Feb 2013 *VERSION=2 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8805 1 2 3 4 5 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 3 50k * Block 2: CTRL limiter * input nodes 3 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * R32 21 31 1000 I31 21 31 100uA R31 31 32 1k C31 32 2 10p S31 31 21 32 2 S_31 .model S_31 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S32 53 2 32 2 S_32 .MODEL S_32 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 5 4 1m ; input amplifier C51 2 4 3p ; input capacitance * SET input current; asymptote input nodes 4 and 2, outputs 4 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 4 2 value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 5 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 49 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 1 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 5 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))} * Block 9: Protection diodes D91 2 1 D_1 ;SW D92 2 5 D_1 ;VIN D93 2 3 D_2 ;CTRL D94 5 4 D_2 ;SET forward D95 4 5 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8805 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA *TITLE=AL8806 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=22 Jul 2013 *VERSION=3 *PIN_ORDER 1:SET, 2:GND, 3:GND, 4:CTRL, 5:SW, 6:SW, 7: N/C, 8: VIN * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * NOTE: set RELTOL=1E-5 for clean switching waveform .subckt AL8806 1 2 3 4 5 6 7 8 Rsh1 2 3 1u Rsh2 5 6 1u * * Block 1: Vref Generator * input nodes 8 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(8)-V(2)-VIL1+MUL1*(1-tanh((V(8)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(8)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 4 50k * Block 2: CTRL limiter * input nodes 4 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(4)-V(2)-VIL2+MUL2*(1-tanh((V(4)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(4)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * R32 21 31 1000 I31 21 31 100uA R31 31 32 1k C31 32 2 10p S31 31 21 32 2 S_31 .model S_31 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S32 53 2 32 2 S_32 .MODEL S_32 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(8)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 8 1 1m ; input amplifier C51 2 1 3p ; input capacitance * SET input current; asymptote input nodes 1 and 2, outputs 1 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 1 2 value={yy5*(V(1)-V(2))/(aa5+(V(1)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 8 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 49 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 5 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 8 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(8)-V(2))} * Block 9: Protection diodes D91 2 5 D_1 ;SW D92 2 8 D_1 ;VIN D93 2 4 D_2 ;CTRL D94 8 1 D_2 ;SET forward D95 1 8 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8805 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA *TITLE=AL8806Q MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=22 Jul 2013 *VERSION=3 *PIN_ORDER 1:SET, 2:GND, 3:GND, 4:CTRL, 5:SW, 6:SW, 7: N/C, 8: VIN * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * NOTE: set RELTOL=1E-5 for clean switching waveform .subckt AL8806Q 1 2 3 4 5 6 7 8 Rsh1 2 3 1u Rsh2 5 6 1u * * Block 1: Vref Generator * input nodes 8 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(8)-V(2)-VIL1+MUL1*(1-tanh((V(8)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(8)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 4 50k * Block 2: CTRL limiter * input nodes 4 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(4)-V(2)-VIL2+MUL2*(1-tanh((V(4)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(4)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * R32 21 31 1000 I31 21 31 100uA R31 31 32 1k C31 32 2 10p S31 31 21 32 2 S_31 .model S_31 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S32 53 2 32 2 S_32 .MODEL S_32 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(8)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 8 1 1m ; input amplifier C51 2 1 3p ; input capacitance * SET input current; asymptote input nodes 1 and 2, outputs 1 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 1 2 value={yy5*(V(1)-V(2))/(aa5+(V(1)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 8 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 49 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 5 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 8 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(8)-V(2))} * Block 9: Protection diodes D91 2 5 D_1 ;SW D92 2 8 D_1 ;VIN D93 2 4 D_2 ;CTRL D94 8 1 D_2 ;SET forward D95 1 8 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8806Q * ===================================================================== * * (c) 2020 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA *TITLE=AL8807 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=17th Jan 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807 10 26 13 20 18 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input is V(18)-V(26) *required input parameters .param VIL1=0.7 VIH1=3.5 VOL1=0 VOH1=2.5 ; low and high limits of input and output .param MUL1=0.1 MUH1=0.05 ; low and high curve error *calculations .param KL1={MUL1*tanh((VIH1-VIL1)/MUL1)} KH1={MUH1*tanh((VIH1-VIL1)/MUH1)} .param SL1={(VOH1-VOL1)/(VIH1-VIL1-KL1-KH1)} ;gain slope E11 14 26 value={min(max(VOL1+SL1*(V(18)-V(26)-VIL1-MUL1*tanh((V(18)-V(26)-VIL1)/MUL1) + -MUH1*tanh((V(18)-V(26)-VIH1)/MUH1)-KH1),VOL1),VOH1)} R4 14 13 50k * Block 2: CTRL limiter * tanh limiter, type 1, input nodes 13 and 26, outputs 12 and 26 .param VIH2=2.5 VOH2=2.5 ;high limits of input and output .param MU2=0.001 ; curve error .param SL2={VOH2/VIH2} ;gain slope E21 12 26 value={SL2*min(V(13)-V(26)-MU2*(1+tanh((V(13)-V(26)-VIH2-MU2)/MU2)),VOH2)} * Block 3: CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout 100uA R31 adj_lockout 31 1k C31 31 26 10p S4 adj_lockout 12 31 26 S_4 .model S_4 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S5 21 26 31 26 S_5 .MODEL S_5 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 26 value={0.5*(1+tanh(1e3*(V(43)-V(18)+5.7)))} R41 41 42 1k C41 42 26 20p R42 42 43 800k R43 43 26 200k S41 21 26 42 26 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 26 8 18 20 1m ; input amplifier C51 26 20 3p ; input capacitance * SET input current; asymptote input nodes 20 and 26, outputs 20 and 26 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 20 26 value={yy5*(V(20)-V(26))/(aa5+(V(20)-V(26))**nn5)**(1/nn5)} R51 26 9 10.417k R52 9 8 20.833k S51 9 26 23 26 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 8 26 0.5p G53 21 26 value={0.01*tanh(100*(V(8)-V(12)))} ;comparator C54 21 26 1f V3 24 26 700mV D8 24 21 Dclamp V4 22 26 8V D9 21 22 Dclamp * Block 6: Comp Delay and gate driver* R64 21 63 10Meg ; input filter with C61 C61 63 26 0.0015p ; G4 61 25 Value={0.1*(max(V(63)-V(25)-0.5,0))**2*(V(61)-V(25))} G5 25 62 Value={0.1*(max(V(25)-V(63)-0.5,0))**2*(V(25)-V(62))} R66 61 25 10meg R67 25 62 10meg R61 18 61 1.2 R62 62 26 1.2 R63 25 26 10k R65 25 64 1 ; driver current sense R13 23 64 330 ; output resistance-1 ohm C6 26 23 25f * Block 7: Output NMOS * S8 11 71 23 71 S_8 .MODEL S_8 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 11 10 50m ; on resistance = R72 + R73 + Ron(S8) R73 71 26 50m C5 11 71 100p C71 23 71 40p C72 11 23 15p * Block 8: Supply Current * G81 18 26 Value={(300u*(V(14)-V(26))/VOH1)+0.6u*(V(18)-V(26))} * Block 9: Protection diodes D91 26 10 D_1 ;SW D92 26 18 D_1 ;VIN D93 26 13 D_2 ;CTRL D94 18 20 D_2 ;SET forward D95 20 18 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA * *TITLE=AL8807 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=17th Jan 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807 10 26 13 20 18 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input is V(18)-V(26) *required input parameters .param VIL1=0.7 VIH1=3.5 VOL1=0 VOH1=2.5 ; low and high limits of input and output .param MUL1=0.1 MUH1=0.05 ; low and high curve error *calculations .param KL1={MUL1*tanh((VIH1-VIL1)/MUL1)} KH1={MUH1*tanh((VIH1-VIL1)/MUH1)} .param SL1={(VOH1-VOL1)/(VIH1-VIL1-KL1-KH1)} ;gain slope E11 14 26 value={min(max(VOL1+SL1*(V(18)-V(26)-VIL1-MUL1*tanh((V(18)-V(26)-VIL1)/MUL1) + -MUH1*tanh((V(18)-V(26)-VIH1)/MUH1)-KH1),VOL1),VOH1)} R4 14 13 50k * Block 2: CTRL limiter * tanh limiter, type 1, input nodes 13 and 26, outputs 12 and 26 .param VIH2=2.5 VOH2=2.5 ;high limits of input and output .param MU2=0.001 ; curve error .param SL2={VOH2/VIH2} ;gain slope E21 12 26 value={SL2*min(V(13)-V(26)-MU2*(1+tanh((V(13)-V(26)-VIH2-MU2)/MU2)),VOH2)} * Block 3: CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout 100uA R31 adj_lockout 31 1k C31 31 26 10p S4 adj_lockout 12 31 26 S_4 .model S_4 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S5 21 26 31 26 S_5 .MODEL S_5 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 26 value={0.5*(1+tanh(1e3*(V(43)-V(18)+5.7)))} R41 41 42 1k C41 42 26 20p R42 42 43 800k R43 43 26 200k S41 21 26 42 26 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 26 8 18 20 1m ; input amplifier C51 26 20 3p ; input capacitance * SET input current; asymptote input nodes 20 and 26, outputs 20 and 26 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 20 26 value={yy5*(V(20)-V(26))/(aa5+(V(20)-V(26))**nn5)**(1/nn5)} R51 26 9 10.417k R52 9 8 20.833k S51 9 26 23 26 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 8 26 0.5p G53 21 26 value={0.01*tanh(100*(V(8)-V(12)))} ;comparator C54 21 26 1f V3 24 26 700mV D8 24 21 Dclamp V4 22 26 8V D9 21 22 Dclamp * Block 6: Comp Delay and gate driver* R64 21 63 10Meg ; input filter with C61 C61 63 26 0.0015p ; G4 61 25 Value={0.1*(max(V(63)-V(25)-0.5,0))**2*(V(61)-V(25))} G5 25 62 Value={0.1*(max(V(25)-V(63)-0.5,0))**2*(V(25)-V(62))} R66 61 25 10meg R67 25 62 10meg R61 18 61 1.2 R62 62 26 1.2 R63 25 26 10k R65 25 64 1 ; driver current sense R13 23 64 330 ; output resistance-1 ohm C6 26 23 25f * Block 7: Output NMOS * S8 11 71 23 71 S_8 .MODEL S_8 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 11 10 50m ; on resistance = R72 + R73 + Ron(S8) R73 71 26 50m C5 11 71 100p C71 23 71 40p C72 11 23 15p * Block 8: Supply Current * G81 18 26 Value={(300u*(V(14)-V(26))/VOH1)+0.6u*(V(18)-V(26))} * Block 9: Protection diodes D91 26 10 D_1 ;SW D92 26 18 D_1 ;VIN D93 26 13 D_2 ;CTRL D94 18 20 D_2 ;SET forward D95 20 18 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA * *TITLE=AL8807A MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Feb 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807A 1 2 3 4 5 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 3 50k * Block 2: CTRL limiter * input nodes 3 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * not used * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 5 4 1m ; input amplifier C51 2 4 3p ; input capacitance * SET input current; asymptote input nodes 4 and 2, outputs 4 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 4 2 value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 5 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 330 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 1 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 5 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))} * Block 9: Protection diodes D91 2 1 D_1 ;SW D92 2 5 D_1 ;VIN D93 2 3 D_2 ;CTRL D94 5 4 D_2 ;SET forward D95 4 5 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807A * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA *TITLE=AL8807A MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Feb 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807A 1 2 3 4 5 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 3 50k * Block 2: CTRL limiter * input nodes 3 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * not used * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 5 4 1m ; input amplifier C51 2 4 3p ; input capacitance * SET input current; asymptote input nodes 4 and 2, outputs 4 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 4 2 value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 5 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 330 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 1 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 5 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))} * Block 9: Protection diodes D91 2 1 D_1 ;SW D92 2 5 D_1 ;VIN D93 2 3 D_2 ;CTRL D94 5 4 D_2 ;SET forward D95 4 5 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807A * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA *TITLE=AL8807Q MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=17th Jan 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807Q 10 26 13 20 18 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input is V(18)-V(26) *required input parameters .param VIL1=0.7 VIH1=3.5 VOL1=0 VOH1=2.5 ; low and high limits of input and output .param MUL1=0.1 MUH1=0.05 ; low and high curve error *calculations .param KL1={MUL1*tanh((VIH1-VIL1)/MUL1)} KH1={MUH1*tanh((VIH1-VIL1)/MUH1)} .param SL1={(VOH1-VOL1)/(VIH1-VIL1-KL1-KH1)} ;gain slope E11 14 26 value={min(max(VOL1+SL1*(V(18)-V(26)-VIL1-MUL1*tanh((V(18)-V(26)-VIL1)/MUL1) + -MUH1*tanh((V(18)-V(26)-VIH1)/MUH1)-KH1),VOL1),VOH1)} R4 14 13 50k * Block 2: CTRL limiter * tanh limiter, type 1, input nodes 13 and 26, outputs 12 and 26 .param VIH2=2.5 VOH2=2.5 ;high limits of input and output .param MU2=0.001 ; curve error .param SL2={VOH2/VIH2} ;gain slope E21 12 26 value={SL2*min(V(13)-V(26)-MU2*(1+tanh((V(13)-V(26)-VIH2-MU2)/MU2)),VOH2)} * Block 3: CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout 100uA R31 adj_lockout 31 1k C31 31 26 10p S4 adj_lockout 12 31 26 S_4 .model S_4 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S5 21 26 31 26 S_5 .MODEL S_5 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 26 value={0.5*(1+tanh(1e3*(V(43)-V(18)+5.7)))} R41 41 42 1k C41 42 26 20p R42 42 43 800k R43 43 26 200k S41 21 26 42 26 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 26 8 18 20 1m ; input amplifier C51 26 20 3p ; input capacitance * SET input current; asymptote input nodes 20 and 26, outputs 20 and 26 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 20 26 value={yy5*(V(20)-V(26))/(aa5+(V(20)-V(26))**nn5)**(1/nn5)} R51 26 9 10.417k R52 9 8 20.833k S51 9 26 23 26 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 8 26 0.5p G53 21 26 value={0.01*tanh(100*(V(8)-V(12)))} ;comparator C54 21 26 1f V3 24 26 700mV D8 24 21 Dclamp V4 22 26 8V D9 21 22 Dclamp * Block 6: Comp Delay and gate driver* R64 21 63 10Meg ; input filter with C61 C61 63 26 0.0015p ; G4 61 25 Value={0.1*(max(V(63)-V(25)-0.5,0))**2*(V(61)-V(25))} G5 25 62 Value={0.1*(max(V(25)-V(63)-0.5,0))**2*(V(25)-V(62))} R66 61 25 10meg R67 25 62 10meg R61 18 61 1.2 R62 62 26 1.2 R63 25 26 10k R65 25 64 1 ; driver current sense R13 23 64 330 ; output resistance-1 ohm C6 26 23 25f * Block 7: Output NMOS * S8 11 71 23 71 S_8 .MODEL S_8 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 11 10 50m ; on resistance = R72 + R73 + Ron(S8) R73 71 26 50m C5 11 71 100p C71 23 71 40p C72 11 23 15p * Block 8: Supply Current * G81 18 26 Value={(300u*(V(14)-V(26))/VOH1)+0.6u*(V(18)-V(26))} * Block 9: Protection diodes D91 26 10 D_1 ;SW D92 26 18 D_1 ;VIN D93 26 13 D_2 ;CTRL D94 18 20 D_2 ;SET forward D95 20 18 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807Q * ===================================================================== * * (c) 2020 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA * * PSpice Model Editor - Version 16.6.0 *************************************************************************************** *************************************************************************************** * * DEVICE : AL8853 - Diodes Incorporated * DATE : 22NOV2019 * SIMULATOR : PSPICE 16.6 * MODEL VERSION : 1.0 * *************************************************************************************** *************************************************************************************** * * DEVICE NOTES: * Following features are been modelled: * 1. Under Voltage Lockout (UVLO) * 2. Output Overvoltage Protection * 3. Overvoltage UVLO Protection * 4. Overcurrent Protection * 5. LED Cathode Short to GND Protection * 6. Inductor or Diode short circuit Protection * 7. Thermal Shutdown * *************************************************************************************** *************************************************************************************** *$ .SUBCKT AL8853 PWM OVP CMP FB VIN GATE GND CS PARAMS: TAMB=27 XU1 PWM OVP CMP FB VIN GATE GND CS Block_1_0 .ENDS *$ .SUBCKT Block_1_0 PWM OVP CMP FB VIN GATE GND CS PARAMS: TAMB={TAMB} IS1 0 CS 50U R70 SHUTDOWN SHUTDOWN_DEL 100 C70 SHUTDOWN_DEL 0 1u IC=0 GComparator 23 0 VALUE = {(((0.2631*V(Ta,0))+((640*(1-V(SHUTDOWN,0)))+50))*1U)} VCCVS1_in VIN 23 HCCVS1 IQ 0 VCCVS1_in 1 XU9 Ta IC_PD IC_TEMP IC_TEMP_0 XU6 I_GATE_AVG IQ I_GATE IC_PD VIN PD_0 R1 PWM 0 220K ECS1 VCC_INT_J1 0 VALUE = {IF(V(UVLO,0)<0.5,7.2,0)} XU7 SNS_CL SS_Done CS PWM_GATE UVLO OVP VIN PWM CMP SHUTDOWN IC_TEMP + FB_OV_SNS_CL_0 XU1 I_GATE PWM_GATE VCC_INT_J1 GATE DRIVER_0 XU2 PWM_GATE CMP Slope_ramp SHUTDOWN SNS_CL CS CLK_ADV CLK PWM_BLOCK_0 XU5 SS_Done SHUTDOWN FB PWM CMP GM_AMP_0 XU4 CLK_ADV Slope_ramp CLK Oscillator_0 .ENDS *$ .SUBCKT IC_TEMP_0 Ta PD IC_TEMP PARAMS: TAMB={TAMB} *IS1 0 25 1 *ECS2 Ta 0 VALUE = {27-((1-V(25,0))/1M)} ECS2 Ta 0 VALUE = {TAMB} *R1 25 0 1 TC=1M ECS1 IC_TEMP 0 VALUE = {V(PD,0)*105+V(Ta,0)} .ENDS *$ .SUBCKT PD_0 I_GATE_AVG IQ I_GATE PD VIN R5 27 I_GATE_AVG 833M C4 I_GATE_AVG 0 100U IC=0 R4 28 27 833M C3 27 0 100U IC=0 EVCVS1 29 0 I_GATE 0 1 XU2 0 28 DIODE_SAN_0 R3 29 28 1 ECS3 PD 0 VALUE = {V(VIN,0)*(V(I_GATE_AVG,0)+V(IQ,0))} R2 30 31 100M C2 31 0 100U IC=0 R1 32 30 100M ECS2 I_GATE_RMS 0 VALUE = {SQRT(V(31,0))} C1 30 0 100U IC=0 ECS1 32 0 VALUE = {V(I_GATE,0)^2} .ENDS *$ .SUBCKT FB_OV_SNS_CL_0 SNS_CL SS_Done SENSE PWM_GATE UVLO OVP VIN PWM COMP + SHUTDOWN Ta V9 Y4 0 160 V8 Y3 0 30 V7 Y2 0 100m V2 50 0 1.2 V3 56 0 4.9 V6 58 0 1.2 IS3 0 59 1M V5 64 0 3.2 IS1 0 62 1M V4 66 0 400M V1 68 0 300M VREF 69 0 2 XU20 VF4 45 46 AND2_SAN_0 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU19 UVLO 45 INV_SAN_0 + PARAMS: VDD=1 VSS=0 C4 46 OV_UVLO_HP 1U IC=0 R1 OV_UVLO_HP 0 1 ECS8 VIN_HP 0 VALUE = {IF(V(SS_Done,0)>0.5,V(X,0),0)} XU18 48 49 INV_SAN_0 + PARAMS: VDD=1 VSS=0 GVCCS1 0 CS_HIGH_Pre 49 0 4.901M XU1 50 SENSE 0 48 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 XU6 VIN_HP OV_UVLO_HP VIN_OV_UVLO_HPOR OR2_SAN_0 + PARAMS: VDD=1 VSS=0 C5 VIN 47 1U IC=0 R2 47 0 1 XU50 47 X MINIMUM_ON_TIME XU17 VF5 VF6 VF4 AND2_SAN_0 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU16 FBX_OVP_UVLO VF6 INV_SAN_0 + PARAMS: VDD=1 VSS=0 XU15 SS_Done VF5 INV_SAN_0 + PARAMS: VDD=1 VSS=0 *ECS7 VINORPWM 0 VALUE = {IF(V(VIN_OV_UVLO_HPOR,0)>0,V(VIN_OV_UVLO_HPOR,0),0)} ECS7 VINORPWM 0 VALUE = {IF(V(SHD_RST,0)>0,V(SHD_RST,0),0)} XU14 SD_Set VINORPWM SHUTDOWN SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 XU12 57 TSD PWMLOW SD_Set OR3_SAN_0 + PARAMS: VDD=1 VSS=0 ECS5 PWMLOW 0 VALUE = {IF(V(59,0)>0.5,1,0)} XU13 PWM 58 0 60 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 SW3 59 0 60 0 S_VSWITCH_1 C3 59 0 40U IC=0 *ECS6 TSD 0 VALUE = {IF(V(Ta,0)>160,1,0)} XU100 Ta Y4 Y3 TSD COMPHYS2_SAN_0 XU11 61 CSHIGH COMP_HIGH 57 OR3_SAN_0 + PARAMS: VDD=1 VSS=0 XU10 FBX_OVP FBX_OVP_UVLO UVLO 61 OR3_SAN_0 + PARAMS: VDD=1 VSS=0 ECS4 63 0 VALUE = {IF(V(62,0)>0.5,1,0)} *XU9 63 VINORPWM COMP_HIGH SRLATCHRHP_SAN_0 XU9 63 Y1 COMP_HIGH SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 XU8 64 COMP 0 65 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 SW1 62 0 65 0 S_VSWITCH_2 C2 62 0 74U IC=0 XU7 56 VIN 66 UVLO COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 ECS3 OV_UVLO_THRD 0 VALUE = {100M+(V(SS_Done,0)*100M)} XU3 OVP_Comp VINORPWM FBX_OVP SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 XU2 OV_UVLO_THRD OVP 0 FBX_OVP_UVLO COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 ECS2 67 0 VALUE = {IF(V(CS_HIGH_Pre,0)>0.45,1,0)} XU5 67 VINORPWM CSHIGH SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 SW2 CS_HIGH_Pre 0 SHUTDOWN 0 S_VSWITCH_3 C1 CS_HIGH_Pre 0 100N IC=0 *ECS1 SNS_CL 0 VALUE = {IF(V(SENSE,0)>V(68,0),1,0)} ECS1 SNS_CL_PRE 0 VALUE = {IF(V(SENSE,0)>V(68,0),1,0)} RCS_F SNS_CL_PRE SNS_CL 141 CCS_F SNS_CL 0 1n XU4 OVP 69 Y2 OVP_Comp COMPHYS2_SAN_0 XU53 VINORPWM Y1 MINIMUM_ON_TIME XU101 TSD TSD_FALL FALL_EDGE_DET_SAN XU103 OVP_Comp OVP_Comp_Fall FALL_EDGE_DET_SAN XU102 TSD_FALL VIN_OV_UVLO_HPOR OVP_Comp_Fall SHD_RST OR3_SAN_0 + PARAMS: VDD=1 VSS=0 .MODEL S_VSWITCH_1 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .MODEL S_VSWITCH_2 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .MODEL S_VSWITCH_3 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .ENDS * USE FED at the output of OVP comparator and OR it with VIN_OV_UVLO_HPOR *$ .SUBCKT MINIMUM_ON_TIME IN OUT PARAMS: VDD=1 VSS=0 MIN_ON_TIME=50n C_C1 0 N06463 1n IC=0 TC=0,0 C_C2 0 N06605 1n IC=0 TC=0,0 V_V3 N06765 0 {VDD} R_R2 0 N06605 {19*{MIN_ON_TIME}/(13.86n)} TC=0,0 E_ABM7 N06563 0 VALUE { {IF(V(N06463)>VTH,VSS,VDD)} } E_ABM9 OUT 0 VALUE { {if(V(IN)>{VTH} | V(N06605)>{VTH},{VDD},{VSS})} + } R_R1 IN N06463 {MIN_ON_TIME/(20n)} TC=0,0 E_ABM8 N06583 0 VALUE { {if(V(IN)>{VTH} & V(N06563)>{VTH},{VDD},{VSS})} + } X_S1 N06583 0 N06765 N06605 MOT_COPY_S1 .PARAM vth={(vdd+vss)/2} .ENDS MINIMUM_ON_TIME *$ .subckt MOT_COPY_S1 1 2 3 4 S_S1 3 4 1 2 _S1 RS_S1 1 2 1G .MODEL _S1 VSWITCH Roff=10G Ron=10m Voff=0.2 Von=0.8 .ends MOT_COPY_S1 *$ .SUBCKT DRIVER_0 I_GATE PWM VCC_INT GATE VCCVS1_in 100 GATE HCCVS1 I_GATE 0 VCCVS1_in 1 SW2 100 0 PWM 0 S_VSWITCH_1 SW1 VCC_INT 100 PWM 0 S_VSWITCH_2 .MODEL S_VSWITCH_1 VSWITCH (RON=9.09 ROFF=1G VON=200M VOFF=800M) .MODEL S_VSWITCH_2 VSWITCH (RON=18.18 ROFF=1G VON=800M VOFF=200M) .ENDS *$ .SUBCKT PWM_BLOCK_0 PWM_OUT COMP SLOPE_R SHUTDOWN SNS_CL SENSE CLK_ADV CLK XU6 102 CLK_ADV CLK_ADV_J1 AND2_SAN_1 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU4 SHUTDOWN 102 INV_SAN_0 + PARAMS: VDD=1 VSS=0 XU3 105 CLK CLK_SDNBAR AND2_SAN_1 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU2 SHUTDOWN 105 INV_SAN_0 + PARAMS: VDD=1 VSS=0 XU5 PWM_OUT SR_OUT_J1 CLK_ADV_J1 CLK_SDNBAR MIN_ON_OFF_TIME_0 XU1 SHUTDOWN 106 SNS_CL 107 OR3_SAN_0 *XU1 SHUTDOWN Y SNS_CL 107 OR3_SAN_0 + PARAMS: VDD=1 VSS=0 XU36 CLK_SDNBAR 107 SR_OUT_J1 SRLATCHRHP_SAN_0 + PARAMS: VDD=1 VSS=0 EComparator 106 0 VALUE = {IF(V(109,0)>V(108,0),1,0)} *XU51 106 Y MINIMUM_ON_TIME Ecomp_ramp 108 0 VALUE = {V(COMP,0)-V(SLOPE_R,0)} EVCVS1 109 0 SENSE 0 3 .ENDS *$ .SUBCKT MIN_ON_OFF_TIME_0 PWM SR_OUT CLK_ADV CLK XU4 116 TMINON PWM AND2_SAN_1 + PARAMS: VDD=1 VSS=0 VTH=0.5 XU1 TMINON CLK_ADV 116 SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 XU3 TMIN SR_OUT TMINON OR2_SAN_0 + PARAMS: VDD=1 VSS=0 ECS1 118 0 VALUE = {IF(V(117,0)>0.5,1,0)} C1 117 0 869N IC=0 R1 117 TMIN 1 XU2 CLK 118 TMIN SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 .ENDS *$ .SUBCKT GM_AMP_0 SS_Done SHUTDOWN FB PWM COMP V3 136 0 0 V2 137 0 200M VHYS 138 0 1.2 VREF 139 0 2.5 V1 134 0 1 IS1 0 SS 22U V4 142 0 4.5 XU18 131 SS_Done DIODE_SAN_0 C6 SS_Done 0 1 ECS8 131 0 VALUE = {V(132,0)} SW1 CMP 0 SHUTDOWN 0 S_VSWITCH_1 GCS3 CMP 0 VALUE = {LIMIT(((V(FB,0)-V(VREF,0))*100U),60U,-30U)} C2 CMP 0 1F IC=0 R1 CMP 0 31.62MEG XU4 SS 134 DIODE_SAN_0 ECS2 135 0 VALUE = {LIMIT(V(SS,0),0.2,0)} XU1 SS 137 136 132 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 ECS1 VREF 0 VALUE = {V(135,0)*V(Dutycycle,0)} XU5 PWM 139 138 140 COMPHYS2_SAN_0 + PARAMS: VDD=1 VSS=0 R5 141 Dutycycle 318 C4 Dutycycle 0 1U IC=0 R4 140 141 318 C3 141 0 1U IC=0 C1 SS 0 1U IC=0 SW3 SS 0 SHUTDOWN 0 S_VSWITCH_2 R2 CMP COMP 1 XU2 COMP 142 DIODE_SAN_0 .MODEL S_VSWITCH_1 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .MODEL S_VSWITCH_2 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .ENDS *$ .SUBCKT Oscillator_0 CLK_ADV Slope_ramp CLK V1 SLOPE_AMP 0 2 IS2 0 153 6M R3 148 CLK 1 *C4 148 0 28N IC=0 C4 148 0 72.15N IC=0 XU3 149 148 CLK SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 XU2 CLK_ADV 149 150 SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 R1 150 151 1 C3 151 0 601.24N IC=0 ECS12 149 0 VALUE = {IF(V(151,0)>0.5,1,0)} ECS3 152 0 VALUE = {IF(V(CLK,0)>0.5,1,0)} SW7 Slope_ramp 0 152 0 S_VSWITCH_1 GCS15 Slope_ramp 0 VALUE = {-120K*1U*V(SLOPE_AMP,0)} C7 Slope_ramp 0 1U IC=0 ECS2 154 0 VALUE = {IF(V(153,0)>0.5,1,0)} ECS1 156 0 VALUE = {IF(V(155,0)>0.5,1,0)} R2 155 CLK_ADV 1 *C2 155 0 28N IC=0 C2 155 0 72.2N IC=0 XU5 154 156 CLK_ADV SRLATCHRHP_SAN_1 + PARAMS: VDD=1 VSS=0 SW2 153 0 156 0 S_VSWITCH_2 C1 153 0 100N IC=0 XU53 0 153 DIODE_SAN_0 .MODEL S_VSWITCH_1 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .MODEL S_VSWITCH_2 VSWITCH (RON=1M ROFF=1G VON=800M VOFF=200M) .ENDS *$ .SUBCKT DIODE_SAN_0 1 2 D1 1 2 IDEAL .MODEL IDEAL D N=1M IS=1E-15 TT=1F .ENDS DIODE_SAN_0 *$ .SUBCKT AND2_SAN_0 IN1 IN2 OUT PARAMS:VDD=1.8 VSS=0 VTH=0.9 E1 OUT1 0 VALUE={IF(V(IN1)>{VTH}&V(IN2)>{VTH},{VDD},0)} R1 OUT1 OUT 0.1 C1 OUT 0 1N IC=0 .ENDS AND2_SAN_0 *$ .SUBCKT INV_SAN_0 IN OUT PARAMS: VDD=1 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E1 OUT1 0 VALUE={IF(V(IN)>{VTH},{VSS},{VDD})} R1 OUT1 OUT 1 C1 OUT 0 1N IC=0 .ENDS INV_SAN_0 *$ * .SUBCKT COMPHYS2_SAN_0 INP INM HYS VOUT PARAMS: VDD=1.8 VSS=0 .PARAM VTH = {( {VDD} + {VSS})/2 } EHYS INM INM_INT VALUE = {IF (V(VOUT)>{VTH},V(HYS),0)} E1 VOUT_PRE 0 VALUE = {IF(V(INP)>V(INM_INT),{VDD},{VSS})} R1 VOUT_PRE VOUT 1 C1 VOUT 0 1N IC=0 .ENDS COMPHYS2_SAN_0 *$ .SUBCKT OR2_SAN_0 IN1 IN2 OUT PARAMS:VDD=1 VSS=0 .PARAM VTH = {( {VDD} + {VSS})/2} E1 OUT1 0 VALUE={IF(V(IN1)<{VTH}&V(IN2)<{VTH},{VSS},{VDD})} R5 OUT1 OUT 1 C5 OUT 0 1N IC=0 .ENDS OR2_SAN_0 *$ ****SRLATCHRHP_SAN**** .SUBCKT SRLATCHRHP_SAN_0 S R Q PARAMS: VDD=1 VSS=0 .PARAM VTH = 0.1 E1 QPRE 0 VALUE = {IF((V(S)VTH,VSS,IF(V(S)>VTH&V(R)VTH&V(R)>VTH,VSS,VSS))))} R1 QPRE OUT 1 C1 OUT 0 1N IC=0 E3 Q 0 VALUE = {IF (V(OUT)>VTH,VDD,0)} .ENDS SRLATCHRHP_SAN_0 *$ .SUBCKT OR3_SAN_0 IN1 IN2 IN3 OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH = {( {VDD} + {VSS})/2} E1 OUT1 0 VALUE={IF(V(IN1)<{VTH}&V(IN2)<{VTH}&V(IN3)<{VTH},{VSS},{VDD})} R1 OUT1 OUT 1 C1 OUT 0 1N IC=0 .ENDS OR3_SAN_0 *$ .SUBCKT AND2_SAN_1 IN1 IN2 OUT PARAMS:VDD=1.8 VSS=0 VTH=0.9 E1 OUT1 0 VALUE={IF(V(IN1)>{VTH}&V(IN2)>{VTH},{VDD},0)} R1 OUT1 OUT 1 C1 OUT 0 1N IC=0 .ENDS AND2_SAN_1 *$ ****SRLATCHRHP_SAN**** .SUBCKT SRLATCHRHP_SAN_1 S R Q PARAMS: VDD=1 VSS=0 .PARAM VTH = 0.5 E1 QPRE 0 VALUE = {IF((V(S)VTH,VSS,IF(V(S)>VTH&V(R)VTH&V(R)>VTH,VSS,VSS))))} R1 QPRE OUT 1 C1 OUT 0 1N IC=0 E3 Q 0 VALUE = {IF (V(OUT)>VTH,VDD,0)} .ENDS SRLATCHRHP_SAN_1 .END *$ * SCMP13WBC8W1 LED model * Model Generated by ROHM * All Rights Reserved * Commercial Use or * Resale Restricted * Date: 2011/06/20 .subckt LED A C D1 A C SCMP13WBC8W1 .MODEL SCMP13WBC8W1 D + IS=10.000E-21 + N=2.3976 + RS=.1837 + IKF=8.4401 + CJO=1.0000E-12 + M=.3333 + VJ=.75 + BV=100 + IBV=100.00E-6 + TT=5.0000E-9 *+ ISR=100.00E-12 .ENDS LED *$ .SUBCKT DMT10H010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003569 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.092E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 53.29 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.273E-010 N = 1.184 RS = 0.0002213 BV = 103 CJO = 2E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *$ .SUBCKT SDT 1 2 D1 1 2 ideal .model ideal D IS=350.02E-9 +N=1.0363 +RS=18.307E-3 +IKF=3.7362 +CJO=1.1962E-9 +M=.60651 +VJ=1.1416 *+ISR=99.900E-3 +NR=.5005 +XTI=-14 +BV=100 +IBV=100.00E-6 +TT=5.0000E-9 .ENDS SDT *$ *FALL_EDGE_DET_SAN .SUBCKT FALL_EDGE_DET_SAN IN OUT PARAMS:VDD=1.8 VSS=0 T=100n .PARAM VTH={({VDD}+{VSS})/2} XU2 IN INT_1 INV PARAMS:VDD={VDD} VSS={VSS} XU1 INT_1 INT_2 OUT AND2_SAN PARAMS:VDD={VDD} VSS={VSS} R1 IN INT_2 {{{T}*1E9}-2} C1 INT_2 0 1.443n IC=0 .ENDS FALL_EDGE_DET_SAN *$ .SUBCKT INV INV_IN INV_OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E2 INV_OUT1 0 VALUE={if(V(INV_IN)>{VTH},{VSS},{VDD})} R4 INV_OUT1 INV_OUT 1 C4 INV_OUT 0 1n IC=0 .ENDS INV *$ .SUBCKT AND2_SAN IN1 IN2 OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E1 OUT1 0 VALUE={if(V(IN1)>{VTH}&V(IN2)>{VTH},{VDD},0)} R1 OUT1 OUT 1 C1 OUT 0 1n IC=0 .ENDS AND2_SAN *$ * PSpice Model Editor - Version 16.6.0 *$ *************************************************************************************** *************************************************************************************** * * DEVICE : AL8860 - Diodes Incorporated * DATE : 14AUG2019 * SIMULATOR : PSPICE 16.6 * MODEL VERSION : 1.0 * *************************************************************************************** *************************************************************************************** * * DEVICE NOTES: * Following features are been modelled: * 1. Soft-Start * 2. PWM Dimming * 3. Analog Dimming * 4. Pulse Skip Mode * 5. Ron variation vs Temperature * 6. LED Open circuit protection * 7. LED Short circuit protection * 8. Over Temperature Protection * *************************************************************************************** *************************************************************************************** .SUBCKT AL8860 CTRL GND SET SW VIN PARAMS: TEMP_CHANGE_RATE=500U TAMB=27 + RTJA=147 E_E4 N148834 GND N148696 GND 1 C_C15 GND N148696 1n IC=0 TC=0,0 E_ABM15 N148964 0 VALUE { if(V(TEMP) > 150-(30*V(OTP)),1,0) } R_R7 N146146 REF 0.1 TC=0,0 X_U12 PWM ISW I_WR IP_INT N07827 ipeaksampler PARAMS: R_R2 RISING_THRS N145465 50 TC=0,0 E_ABM3 RISING_THRS 0 VALUE { V(CTRL_LIMIT)*1.2 } E_ABM20 VRON 0 VALUE { ((0.0016m*V(TEMP)*V(TEMP)) + (0.5137m*V(TEMP)) + + 17.383m)*V(ISW) } C_C12 OTP GND 1n TC=0,0 E_ABM22 RON 0 VALUE { V(SW)/(V(ISW)+10u) } C_C9 GND N148806 1n IC=0 TC=0,0 X_U11 N148806 N148802 diode PARAMS: C_C17 GND CTRL 71.43p IC=0 TC=0,0 E_ABM16 VIN_UVLO 0 VALUE { if(V(VIN) > 4.2-(0.2*V(VIN_UVLO)),1,0) } E_ABM4 N145295 0 VALUE { V(RISING_THRS)-V(CTRL_LIMIT)*0.8 } E_ABM8 IOUT 0 VALUE { (V(N07827))/1.1 } R_R11 N148964 OTP 500 TC=0,0 E_ABM7 IRMS 0 VALUE { ((V(IOUT)**2)+((0.26*V(IOUT))**2)/12)*V(D) } E_ABM1 REF 0 VALUE { min(max((0.8928*(V(VIN)-0.75)),0),2.5) } C_C5 GND N140441 1u IC=0 TC=0,0 R_R10 N140441 D 6 TC=0,0 E_ABM27 N148696 0 VALUE { V(IRMS)*((V(VRON)/V(Isw))+0.2)*{Rtja} } E_ABM2 CTRL_LIMIT 0 VALUE { min(V(CTRL),2.5) } C_C13 GND N145359 1n TC=0,0 C_C1 GND N145465 1n TC=0,0 R_R5 N140479 N140441 6 TC=0,0 G_G2 N148802 N148806 N149178 GND 1 X_U3 SENSE N145465 N145295 N145353 COMPHYS2_SAN PARAMS: VDD=1.8 VSS=0 X_U16 GND CTRL diode PARAMS: E_E3 N145603 GND VRON GND 1 E_ABM24 N149178 0 VALUE { 1n/{Temp_Change_rate} } X_U10 N148834 N148802 diode PARAMS: C_C11 GND D 1u IC=0 TC=0,0 X_H1 SW SW1 ISW GND AL8860_H1 E_E1 SENSE GND VIN SET 25 X_U6 GND SW1 diode PARAMS: E_ABM5 PWM 0 VALUE { IF( V(N145353)>0.5 | V(N145359)>0.5,1,0) } V_V1 N146278 GND 4.5 X_U15 CTRL N146146 diode PARAMS: E_ABM12 N145529 0 VALUE { if((V(CTRL_LIMIT)<0.3) | (V(VIN_UVLO)<0.5) | + (V(OTP)>0.5) ,1,0) } E_ABM13 N140413 0 VALUE { IF(V(PWM)>0.5,0,1) } R_R12 N145529 N145359 1 TC=0,0 X_S1 PWM GND SW1 N145603 AL8860_S1 I_I5 N146278 CTRL DC 1.786u E_E2 N140479 GND N140413 GND 1 G_G1 N148802 N148834 N149178 GND 1 E_ABM10 TEMP 0 VALUE { (V(N148806)+{Tamb}) } .ENDS .subckt AL8860_H1 1 2 3 4 H_H1 3 4 VH_H1 1 VH_H1 1 2 0V .ends AL8860_H1 *$ .subckt AL8860_S1 1 2 3 4 S_S1 3 4 1 2 _S1 RS_S1 1 2 1G .MODEL _S1 VSWITCH Roff=1G Ron=200m Voff=0.8 Von=0.2 .ends AL8860_S1 *$ .subckt ipeaksampler pwm isw i_wr ip_int ip c5 ip 0 1n ic=0 xu7 pwm 5 rise_edge_det_san_0 + params: VDD=1 VSS=0 T=100n sw3 ip ip_int 5 0 s_vswitch_1 c4 i_wr 0 1u ic=0 r4 isw i_wr 100m c3 ip_int 0 1n ic=0 sw2 ip_int i_wr pwm 0 s_vswitch_2 .model s_vswitch_1 vswitch + ron=0.01 + roff=1e+009 + von=0.8 + voff=0.2 .model s_vswitch_2 vswitch + ron=0.01 + roff=1e+009 + von=0.2 + voff=0.8 .ends ipeaksampler *$ .subckt diode 1 2 d1 1 2 ideal .model ideal d + n=0.001 + is=1e-015 .ends diode *$ .subckt COMPHYS2_SAN INP INM HYS VOUT PARAMS: VDD=1 VSS=0 .PARAM VTH = {( {VDD} + {VSS})/2 } EHYS INM INM_INT value = {if (V(VOUT)>{VTH},V(HYS),0)} E1 VOUT_PRE 0 value = {if(V(INP)>V(INM_INT),{VDD},{VSS})} R1 VOUT_PRE VOUT 1 C1 VOUT 0 1n IC=0 .ends COMPHYS2_SAN *$ .SUBCKT RISE_EDGE_DET_SAN_0 IN OUT PARAMS:VDD=1 VSS=0 T=100N .PARAM VTH={({VDD}+{VSS})/2} XU1 IN IN2 OUT AND PARAMS:VDD={VDD} VSS={VSS} XU2 IN OUT_IN INV PARAMS:VDD={VDD} VSS={VSS} XU3 OUT_IN IN2 DIODE R1 OUT_IN IN2 {{{T}*1E9}} C1 IN2 0 1.443N .ENDS RISE_EDGE_DET_SAN_0 *$ .SUBCKT AND IN1 IN2 OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E1 OUT1 0 VALUE={IF(V(IN1)>{VTH}&V(IN2)>{VTH},{VDD},{VSS})} R2 OUT1 OUT 1 C2 OUT 0 1N .ENDS AND *$ .SUBCKT INV INV_IN INV_OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E2 INV_OUT1 0 VALUE={IF(V(INV_IN)>{VTH},{VSS},{VDD})} R4 INV_OUT1 INV_OUT 1 C4 INV_OUT 0 1N .ENDS INV *$ ** Schottky diode ** .subckt B240A A B DSD1 A B DI_B240A .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) .ENDS B240A *$ ** LED Model ** .subckt LEDR A B DLED1 A B D_CQX35A_1 .MODEL D_CQX35A_1 D( IS= 9.43000000000000E-0017 N=2.13 BV=5 IBV=10U + RS=2.08 CJO=63.8P VJ=3.4 M=226M FC=500M + TT=25.9N EG=1.11 XTI=3 KF=0 AF=1 ) .ENDS LEDR *$ * PSpice Model Editor - Version 16.6.0 *$ *************************************************************************************** *************************************************************************************** * * DEVICE : AL8860 - Diodes Incorporated * DATE : 23AUG2019 * SIMULATOR : PSPICE 16.6 * MODEL VERSION : 1.0 * *************************************************************************************** *************************************************************************************** * * DEVICE NOTES: * Following features are been modelled: * 1. Soft-Start * 2. PWM Dimming * 3. Analog Dimming * 4. Pulse Skip Mode * 5. Ron variation vs Temperature * 6. LED Open circuit protection * 7. LED Short circuit protection * 8. Over Temperature Protection * *************************************************************************************** *************************************************************************************** .SUBCKT AL8860Q CTRL GND SET SW VIN PARAMS: TEMP_CHANGE_RATE=500U TAMB=27 E_E4 N148834 GND N148696 GND 1 C_C15 GND N148696 1n IC=0 TC=0,0 E_ABM15 N148964 0 VALUE { if(V(TEMP) > 150-(30*V(OTP)),1,0) } R_R7 N146146 REF 0.1 TC=0,0 X_U12 PWM ISW I_WR IP_INT N07827 ipeaksampler PARAMS: R_R2 RISING_THRS N145465 50 TC=0,0 E_ABM3 RISING_THRS 0 VALUE { V(CTRL_LIMIT)*1.2 } E_ABM20 VRON 0 VALUE { ((0.0016m*V(TEMP)*V(TEMP)) + (0.5137m*V(TEMP)) + + 17.383m)*V(ISW) } C_C12 OTP GND 1n TC=0,0 E_ABM22 RON 0 VALUE { V(SW)/(V(ISW)+10u) } C_C9 GND N148806 1n IC=0 TC=0,0 X_U11 N148806 N148802 diode PARAMS: C_C17 GND CTRL 71.43p IC=0 TC=0,0 E_ABM16 VIN_UVLO 0 VALUE { if(V(VIN) > 4.2-(0.2*V(VIN_UVLO)),1,0) } E_ABM4 N145295 0 VALUE { V(RISING_THRS)-V(CTRL_LIMIT)*0.8 } E_ABM8 IOUT 0 VALUE { (V(N07827))/1.1 } R_R11 N148964 OTP 500 TC=0,0 E_ABM7 IRMS 0 VALUE { ((V(IOUT)**2)+((0.26*V(IOUT))**2)/12)*V(D) } E_ABM1 REF 0 VALUE { min(max((0.8928*(V(VIN)-0.75)),0),2.5) } C_C5 GND N140441 1u IC=0 TC=0,0 R_R10 N140441 D 6 TC=0,0 E_ABM27 N148696 0 VALUE { V(IRMS)*((V(VRON)/(V(Isw)))+0.2)* 56 } E_ABM2 CTRL_LIMIT 0 VALUE { min(V(CTRL),2.5) } C_C13 GND N145359 1n TC=0,0 C_C1 GND N145465 1n TC=0,0 R_R5 N140479 N140441 6 TC=0,0 G_G2 N148802 N148806 N149178 GND 1 X_U3 SENSE N145465 N145295 N145353 COMPHYS2_SAN PARAMS: VDD=1.8 VSS=0 X_U16 GND CTRL diode PARAMS: E_E3 N145603 GND VRON GND 1 E_ABM24 N149178 0 VALUE { 1n/{Temp_Change_rate} } X_U10 N148834 N148802 diode PARAMS: C_C11 GND D 1u IC=0 TC=0,0 X_H1 SW SW1 ISW GND AL8860_H1 E_E1 SENSE GND VIN SET 25 X_U6 GND SW1 diode PARAMS: E_ABM5 PWM 0 VALUE { IF( V(N145353)>0.5 | V(N145359)>0.5,1,0) } V_V1 N146278 GND 4.5 X_U15 CTRL N146146 diode PARAMS: E_ABM12 N145529 0 VALUE { if((V(CTRL_LIMIT)<0.3) | (V(VIN_UVLO)<0.5) | + (V(OTP)>0.5) ,1,0) } E_ABM13 N140413 0 VALUE { IF(V(PWM)>0.5,0,1) } R_R12 N145529 N145359 1 TC=0,0 X_S1 PWM GND SW1 N145603 AL8860_S1 I_I5 N146278 CTRL DC 1.786u E_E2 N140479 GND N140413 GND 1 G_G1 N148802 N148834 N149178 GND 1 E_ABM10 TEMP 0 VALUE { (V(N148806)+{Tamb}) } .ENDS *$ .subckt AL8860_H1 1 2 3 4 H_H1 3 4 VH_H1 1 VH_H1 1 2 0V .ends AL8860_H1 *$ .subckt AL8860_S1 1 2 3 4 S_S1 3 4 1 2 _S1 RS_S1 1 2 1G .MODEL _S1 VSWITCH Roff=10G Ron=200m Voff=0.8 Von=0.2 .ends AL8860_S1 *$ .subckt ipeaksampler pwm isw i_wr ip_int ip c5 ip 0 1n ic=0 xu7 pwm 5 rise_edge_det_san_0 + params: VDD=1 VSS=0 T=100n sw3 ip ip_int 5 0 s_vswitch_1 c4 i_wr 0 1u ic=0 r4 isw i_wr 100m c3 ip_int 0 1n ic=0 sw2 ip_int i_wr pwm 0 s_vswitch_2 .model s_vswitch_1 vswitch + ron=0.01 + roff=1e+009 + von=0.8 + voff=0.2 .model s_vswitch_2 vswitch + ron=0.01 + roff=1e+009 + von=0.2 + voff=0.8 .ends ipeaksampler *$ .subckt diode 1 2 d1 1 2 ideal .model ideal d + n=0.001 + is=1e-015 .ends diode *$ .subckt COMPHYS2_SAN INP INM HYS VOUT PARAMS: VDD=1 VSS=0 .PARAM VTH = {( {VDD} + {VSS})/2 } EHYS INM INM_INT value = {if (V(VOUT)>{VTH},V(HYS),0)} E1 VOUT_PRE 0 value = {if(V(INP)>V(INM_INT),{VDD},{VSS})} R1 VOUT_PRE VOUT 1 C1 VOUT 0 1n IC=0 .ends COMPHYS2_SAN *$ .SUBCKT RISE_EDGE_DET_SAN_0 IN OUT PARAMS:VDD=1 VSS=0 T=100N .PARAM VTH={({VDD}+{VSS})/2} XU1 IN IN2 OUT AND PARAMS:VDD={VDD} VSS={VSS} XU2 IN OUT_IN INV PARAMS:VDD={VDD} VSS={VSS} XU3 OUT_IN IN2 DIODE R1 OUT_IN IN2 {{{T}*1E9}} C1 IN2 0 1.443N .ENDS RISE_EDGE_DET_SAN_0 *$ .SUBCKT AND IN1 IN2 OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E1 OUT1 0 VALUE={IF(V(IN1)>{VTH}&V(IN2)>{VTH},{VDD},{VSS})} R2 OUT1 OUT 1 C2 OUT 0 1N .ENDS AND *$ .SUBCKT INV INV_IN INV_OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E2 INV_OUT1 0 VALUE={IF(V(INV_IN)>{VTH},{VSS},{VDD})} R4 INV_OUT1 INV_OUT 1 C4 INV_OUT 0 1N .ENDS INV *$ ** Schottky diode ** .subckt B240A A B DSD1 A B DI_B240A .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) .ENDS B240A *$ ** LED Model ** .subckt LEDR A B DLED1 A B D_CQX35A_1 .MODEL D_CQX35A_1 D( IS= 9.43000000000000E-0017 N=2.13 BV=5 IBV=10U + RS=2.08 CJO=63.8P VJ=3.4 M=226M FC=500M + TT=25.9N EG=1.11 XTI=3 KF=0 AF=1 ) .ENDS LEDR *$ *$ *************************************************************************************** *************************************************************************************** * * DEVICE : AL8863 - Diodes Incorporated * DATE : 11NOV2019 * SIMULATOR : PSPICE 16.6 * MODEL VERSION : 1.1 * *************************************************************************************** *************************************************************************************** * * DEVICE NOTES: * Following features are been modelled: * 1. Soft-Start * 2. PWM Dimming * 3. LED Open circuit protection * 4. LED Short circuit protection * *************************************************************************************** *************************************************************************************** .SUBCKT AL8863 OSP DIM NTC GND DRV VIN FAULT CSN V_V4 N170483 GND 2.6 V_V3 N170415 GND 150m V_V2 N170387 GND 4.3 E_ABM4 N170769 0 VALUE { V(RISING_THRS)-V(CTRL_LIMIT)*0.87 } E_E1 SENSE GND VIN CSN 25 X_U18 DIM N170483 N170531 N171165 COMPHYS2_SAN PARAMS: VDD=2.5 VSS=0 C_C13 GND N170833 1n TC=0,0 X_U3 SENSE N170915 N170769 N170809 COMPHYS2_SAN PARAMS: VDD=1 VSS=0 R_R13 DIM REF 10.8k TC=0,0 E_ABM5 N170977 0 VALUE { IF( V(N170809)>0.5 | V(N170833)>0.5,0,1) } E_ABM3 RISING_THRS 0 VALUE { V(CTRL_LIMIT)*1.13 } R_R12 N170985 N170833 2 TC=0,0 E_ABM1 REF 0 VALUE { min(max((0.8928*(V(VIN)-0.75)),0),2.61) } X_U17 VIN N170387 N170415 VIN_UVLO COMPHYS2_SAN PARAMS: VDD=1 VSS=0 V_V5 N170531 GND 2.3 R_R2 RISING_THRS N170915 100 TC=0,0 C_C1 GND N170915 1.433n TC=0,0 E_ABM13 N174870 0 VALUE { LIMIT(IF( V(N178997)>0.5,V(VIN),0),0,15) } R_R14 N174879 DRV 2.2 TC=0,0 R_R15 N174883 DRV 5.7 TC=0,0 X_U15 N174870 N174883 DIODE X_U19 N174879 N174870 DIODE E_ABM20 OPEN 0 VALUE { if(V(VIN)-V(CSN)<0.01,1,0) } G_ABMII1 GND N176460 VALUE { if(V(SHORT)>0.5,1u,-10 ) } G_ABM2I1 GND N176707 VALUE { if(V(OPEN)<0.5,-10,(if(V(CTRL_LIMIT)>1.3 & + V(OPEN)>0.5,1u,0))) } C_C14 N176707 GND 1u IC=0 TC=0,0 C_C15 N176460 GND 1u IC=0 TC=0,0 X_U20 GND N176707 DIODE_1 X_U21 GND N176460 DIODE_1 E_ABM21 SHORT 0 VALUE { if(V(CSN)-V(OSP)<1,1,0) } E_ABM23 N177392 0 VALUE { if(V(N176707)>416u,1,0) } E_ABM24 N177399 0 VALUE { if(V(N176460)>23m,1,0) } X_S3 N177426 GND FAULT GND SCHEMATIC1_S3 E_ABM25 N177426 0 VALUE { if(V(N177392)>0.5 | V(N177399)>0.5,1,0) } X_U22 N170977 N178997 MINIMUM_ON_TIME PARAMS: MIN_ON_TIME=500n VDD=1 + VSS=0 E_ABM26 N170985 0 VALUE { IF(V(VIN_UVLO)<0.5 | V(CTRL_LIMIT)<0.3,1,0) + } I_I1 GND NTC DC 100u E_ABM27 CTRL_LIMIT 0 VALUE { + LIMIT(if(V(N171165)>1.25,(5*V(NTC_INT)-4),0),0,2.5) } E_ABM28 NTC_INT 0 VALUE { LIMIT(V(NTC),1,1.3) } R_R16 GND NTC 5G TC=0,0 X_U23 NTC N185478 DIODE_1 V_V6 N185478 GND 4.5 .ENDS AL8863 *$ .subckt SCHEMATIC1_S3 1 2 3 4 S_S3 3 4 1 2 _S3 RS_S3 1 2 1G .MODEL _S3 VSWITCH Roff=1G Ron=1u Voff=200m Von=800m .ends SCHEMATIC1_S3 *$ .SUBCKT DMN6068 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 380E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 426E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 2n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS DMN6068 *$ .subckt diode 1 2 d1 1 2 ideal .model ideal d + n=0.001 + is=1e-015 .ends diode *$ .subckt diode_1 1 2 d1 1 2 ideal .model ideal d + n=1u + is=1e-015 .ends diode_1 *$ .subckt COMPHYS2_SAN INP INM HYS VOUT PARAMS: VDD=1 VSS=0 .PARAM VTH = {( {VDD} + {VSS})/2 } EHYS INM INM_INT value = {if (V(VOUT)>{VTH},V(HYS),0)} E1 VOUT_PRE 0 value = {if(V(INP)>V(INM_INT),{VDD},{VSS})} R1 VOUT_PRE VOUT 1 C1 VOUT 0 1n IC=0 .ends COMPHYS2_SAN *$ .SUBCKT RISE_EDGE_DET_SAN_0 IN OUT PARAMS:VDD=1 VSS=0 T=100N .PARAM VTH={({VDD}+{VSS})/2} XU1 IN IN2 OUT AND PARAMS:VDD={VDD} VSS={VSS} XU2 IN OUT_IN INV PARAMS:VDD={VDD} VSS={VSS} XU3 OUT_IN IN2 DIODE R1 OUT_IN IN2 {{{T}*1E9}} C1 IN2 0 1.443N .ENDS RISE_EDGE_DET_SAN_0 *$ .SUBCKT AND IN1 IN2 OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E1 OUT1 0 VALUE={IF(V(IN1)>{VTH}&V(IN2)>{VTH},{VDD},{VSS})} R2 OUT1 OUT 1 C2 OUT 0 1N .ENDS AND *$ .SUBCKT INV INV_IN INV_OUT PARAMS:VDD=1.8 VSS=0 .PARAM VTH={({VDD}+{VSS})/2} E2 INV_OUT1 0 VALUE={IF(V(INV_IN)>{VTH},{VSS},{VDD})} R4 INV_OUT1 INV_OUT 1 C4 INV_OUT 0 1N .ENDS INV *$ .subckt B240A A B DSD1 A B DI_B240A .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) .ENDS B240A *$ .subckt LEDR A B DLED1 A B D_CQX35A_1 .MODEL D_CQX35A_1 D( IS= 9.43000000000000E-0017 N=2.13 BV=5 IBV=10U + RS=2.08 CJO=63.8P VJ=3.4 M=226M FC=500M + TT=25.9N EG=1.11 XTI=3 KF=0 AF=1 ) .ENDS LEDR *$ .SUBCKT MINIMUM_ON_TIME IN OUT PARAMS: MIN_ON_TIME=20n VDD=1 VSS=0 C_C1 0 N06463 1n IC=0 TC=0,0 C_C2 0 N06605 1n IC=0 TC=0,0 V_V3 N06765 0 {VDD} R_R2 0 N06605 {19*{MIN_ON_TIME}/(13.86n)} TC=0,0 E_ABM7 N06563 0 VALUE { {IF(V(N06463)>VTH,VSS,VDD)} } E_ABM9 OUT 0 VALUE { {if(V(IN)>{VTH} | V(N06605)>{VTH},{VDD},{VSS})} + } R_R1 IN N06463 {MIN_ON_TIME/(20n)} TC=0,0 E_ABM8 N06583 0 VALUE { {if(V(IN)>{VTH} & V(N06563)>{VTH},{VDD},{VSS})} + } X_S1 N06583 0 N06765 N06605 MOT_COPY_S1 .PARAM vth={(vdd+vss)/2} .ENDS MINIMUM_ON_TIME *$ .subckt MOT_COPY_S1 1 2 3 4 S_S1 3 4 1 2 _S1 RS_S1 1 2 1G .MODEL _S1 VSWITCH Roff=10G Ron=10m Voff=0.2 Von=0.8 .ends MOT_COPY_S1 *$ *DIODES-BCD AP2127 ADJ Version Spice Model v1.0 * *NOTE: This is a simplified model not all features are modeled. * .subckt AP2127_ADJ 1 2 3 4 5 * NODES: VIN GND EN ADJ VOUT M1 5 9 1 1 MOD1 L=1u W=1000u R1 6 1 1E6 C1 9 1 20E-12 C2 5 9 20E-12 G1 2 20 4 12 6E-6 G2 2 22 12 4 6E-6 F1 22 2 VS 1 F2 1 6 VS 20 G3 6 1 22 2 100E-6 R3 20 23 10E3 VS 23 2 0 C3 20 2 310E-15 C4 20 5 10E-12 R2 22 2 5E6 R5 22 24 400E3 C5 24 2 20E-12 D1 5 1 Dmod1 R6 3 13 20E4 R7 3 2 3E6 C6 13 2 4E-6 R8 1 5 50E6 R9 6 9 20E3 R10 2 12 Rmod1 1 R40 5 2 5E4 S1 1 6 13 2 Smod1 I1 2 12 0.8 .MODEL MOD1 PMOS (VTO=-0.82 RS=0.2 RD=0.2 IS=1E-15 KP=0.73 KF=2e-19 AF=1.22) .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1) .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5) .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7) .MODEL Smod1 VSWITCH RON=1E-3 ROFF=10E6 VON=0.5 VOFF=1.2 .ENDS AP2127_ADJ * *TITLE=AP431i MACROMODEL *SIMULATOR=DIODES, SIMETRIX and PSPICE *VERSION=1 *PIN_ORDER 1:Ka, 2:Ref, 3:An * * .subckt AP431i Ka Ref An * Connections Ka Ref An * L_IC1_L3 Ka $N_0002 2n L_IC1_L4 Ref $N_0004 2n Q_IC1_Q3 $N_0002 $N_0004 $N_0005 qn M=9.7 R_IC1_R1 $N_0005 $N_0006 9.7K R_IC1_R2 $N_0005 $N_0007 9.7K R_IC1_R3 $N_0005 $N_0008 37.6K Q_IC1_Q16 $N_0009 $N_0009 $N_0006 qp M=1 Q_IC1_Q0 $N_0010 $N_0009 $N_0007 qp M=1 R_IC1_R44 $N_0009 $N_0011 0.5K Q_IC1_Q21 $N_0011 $N_0008 $N_0012 qn M=3.23 L_IC1_L2 An $N_0012 2n R_IC1_R0 $N_0008 $N_0013 1.88K Q_IC1_Q24 $N_0013 $N_0008 $N_0012 qn M=16.15 R_IC1_R50 $N_0013 $N_0014 21K Q_IC1_Q23 $N_0010 $N_0014 $N_0012 qn M=32.3 C_IC1_C1 $N_0010 $N_0002 7.4p Q_IC1_Q14 $N_0015 $N_0010 $N_0012 qn M=6.4 Q_IC1_Q9 $N_0015 $N_0015 $N_0002 qp M=1 Q_IC1_Q15 $N_0016 $N_0015 $N_0002 qp M=3 Q_IC1_Q26 $N_0016 $N_0016 $N_0004 qn M=8 Q_IC1_Q7 $N_0016 $N_0016 $N_0017 qn M=4 R_IC1_R20 $N_0017 $N_0018 8.5K R_IC1_R21 $N_0018 $N_0019 3K Q_IC1_Q6 $N_0019 $N_0019 $N_0012 qn M=5.6 R_IC1_R8 $N_0019 $N_0012 52K C_IC1_C2 $N_0016 $N_0002 7.6p Q_IC1_Q2 $N_0002 $N_0016 $N_0018 qn M=36 Q_IC1_Q1 $N_0002 $N_0018 $N_0012 qn M=166 .model qn NPN *********************** DC ********************************* + IS=2.591E-17 BF=154.4776 NF=1.0 + VAF=341.1118 IKF=3.2586E-03 ISE=2.6702E-17 + NE=1.3141 BR=0.0403 NR=0.9921 + VAR=11.3432 IKR=2.2258E-04 ISC=1.7561E-15 + NC=1.1645 RB=506.9155 IRB=1.0368E-05 + RBM=100.1645 RE=2.5875 RC=1180 + Tref=27.0 ********************** Capacitance *************************** + CJE=9.88E-14 VJE=0.7404 MJE=0.3691 + CJC=7.67E-14 VJC=0.5511 MJC=0.3769 + CJS=4.91E-13 VJS=0.443 MJS=0.2484 + FC=0.75 XCJC=0.3 ********************* Transit Time *************************** + TF=3.98E-10 XTF=38.61 VTF=43.06 + ITF=0.1143 TR=3.98E-8 PTF=29.86 ********************* Temperature **************************** + XTB=1.25 XTI=5.2 EG=1.11 ********************* Noise ********************************** + KF=0.00 AF=1.0 *################################################################# .model qp PNP *********************** DC ********************************* + IS=9.1059E-17 BF=576.0 NF=1.0 + VAF=72.694 IKF=2.946E-05 ISE=6.327E-16 + NE=1.7475 BR=85.867 NR=1.0053 + VAR=13.078 IKR=1.575E-05 ISC=4.96E-17 + NC=1.234 RB=2.9407E+03 IRB=1.8253E-07 + RBM=204.78 RE=51.3374 RC=419.9798 + Tref=27.0 ********************** Capacitance *************************** + CJE=3.15E-14 VJE=0.5511 MJE=0.3769 + CJC=3.03E-13 VJC=0.5511 MJC=0.3769 + CJS=8.1E-13 VJS=0.443 MJS=0.2484 + FC=0.75 XCJC=0.08 ********************* Transit Time *************************** + TF=2.01E-08 XTF=1.0335 VTF=8.5728 + ITF=0.0337 TR=10E-8 PTF=0.00 ********************* Temperature **************************** + XTB=0.095 XTI=6.6053 EG=1.11 ********************* Noise ********************************** + KF=0.00 AF=1.0 *################################################################# .ends AP431i *TITLE=AP8803 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX *DATE=6th Jan 2012 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * SIMetrix macromodel for AL8803 Buck LED Driver * based on work by Tim Wilson .subckt AL8803_SIMETRIX 10 26 13 20 18 * pins-------------------1---2---3----4---5 *names SW GND CTRL SET VIN * Vref Generator * E2 19 26 18 26 1 B111 14 26 V=Min(V(19), 1.25) R3 14 19 20k R4 14 13 200k * CTRL input filter * * Faster (but unrealistic) startup can be * achieved by changing initial conditions * on C1 to C3 to match the settled value. * eg 1.25V if CTRL is floating in the application * or equal to the external DC voltage applied to CTRL * or equal to the average value of the PWM signal * applied to CTRL C1 15 26 5p IC=0 C2 16 26 5p IC=0 C3 17 26 5p IC=0 R5 13 15 7.7meg R6 15 16 7.7meg R7 16 17 7.7meg E7 12 26 17 26 1 * CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout DC 50uA C7 adj_lockout 12 1p IC=0 X_S4 adj_lockout 26 adj_lockout 12 AP_S4 X_S5 adj_lockout 26 23 26 AP_S5 * UV lockout * X_S6 18 26 23 26 AP_S6 * Main Function * G2 26 8 18 20 1m C4 26 20 20p R9 26 9 3.832k R10 9 8 10.859k X_S7 23 26 9 26 AP_S7 G3 21 26 8 12 1000m R11 26 21 1meg V3 24 26 700mV D8 24 21 Dclamp V4 22 26 6V D9 21 22 Dclamp * Comp Delay (Asymmetric) * E4 25 26 21 26 1 C6 26 23 25p R13 23 25 2k * Output NMOS * X_S8 23 26 11 26 AP_S8 R12 11 10 0.4 C5 26 10 100p * Supply Current * X_S3 adj_lockout 26 4 7 AP_S3 R1 26 7 1.58k R2 26 4 67k X_S2 18 26 6 4 AP_S2 V1 5 26 1V X_F1 6 5 18 26 AP_F1 * Timestep Control * * Only purpose is to force timestep without using a control card * V99 99 26 DC 0 AC 0 PULSE 0 0 0 100n 100n 500n 1u R99 99 26 100 .model Dzener D Is=1e-8 N=10 bv=1.245 ibv=1e-12 Cjo=.1e-12 Rs=.1 TBV1=4e-5 nbv=.01 .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .subckt AP_F1 1 2 3 4 F_F1 3 4 VF_F1 1 VF_F1 1 2 0V .ends AP_F1 .subckt AP_S3 1 2 3 4 S_S3 3 4 1 2 S3 RS_S3 1 2 1G .MODEL S3 VSWITCH Roff=1e6 Ron=1.0 Voff=198mV Von=200mV .ends AP_S3 .subckt AP_S2 1 2 3 4 S_S2 3 4 1 2 S2 RS_S2 1 2 1G .MODEL S2 VSWITCH Roff=1e6 Ron=1.0 Voff=1.248V Von=1.25V .ends AP_S2 .subckt AP_S6 1 2 3 4 S_S6 3 4 1 2 S6 RS_S6 1 2 1G .MODEL S6 VSWITCH Roff=10e6 Ron=1.0 Voff=6.505V Von=6.495V .ends AP_S6 .subckt AP_S7 1 2 3 4 S_S7 3 4 1 2 S7 RS_S7 1 2 1G .MODEL S7 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV .ends AP_S7 .subckt AP_S8 1 2 3 4 S_S8 3 4 1 2 S8 RS_S8 1 2 1G .MODEL S8 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV .ends AP_S8 .subckt AP_S4 1 2 3 4 S_S4 3 4 1 2 S4 RS_S4 1 2 1G .MODEL S4 VSWITCH Roff=10e6 Ron=1 Voff=255mV Von=245mV .ends AP_S4 .subckt AP_S5 1 2 3 4 S_S5 3 4 1 2 S5 RS_S5 1 2 1G .MODEL S5 VSWITCH Roff=10e6 Ron=1.0 Voff=251mV Von=249mV .ends AP_S5 .ends AP8803_SIMETRIX * * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL .subckt AS431 ANODE CATHODE REFIN Q8 Q2_C Q2_C R4_N 0 P1 Q9 CATHODE Q7_C Q9_E 0 n1 R8 Q4_E ANODE 800 R9 Q2_E R9_N 1k Q10 CATHODE R6_P ANODE 0 n1 5 Q11 Q7_C R10_P ANODE 0 n1 .nodeset R3_N 1 C2 Q2_E C2_N 2p C3 R9_N R10_P 2p R10 R10_P R1_N 1k C1 CATHODE Q7_C 40p D1 ANODE Q7_C DIODE D2 ANODE CATHODE DIODE R4 CATHODE R4_N 800 Q2 Q2_C Q1_E Q2_E 0 n1 Q3 R9_N C2_N ANODE 0 n1 R5 CATHODE R5_N 800 R6 R6_P Q9_E 150 Q1 CATHODE REFIN Q1_E 0 n1 R7 ANODE R6_P 10k Q6 Q7_C Q7_C REFIN 0 n1 Q7 Q7_C Q2_C R5_N 0 P1 R1 R3_N R1_N 2.4k R2 R3_N C2_N 7.2k Q4 C2_N R1_N Q4_E 0 n1 Q5 R1_N R1_N ANODE 0 n1 R3 Q1_E R3_N 3.22k .model p1 pnp bf=50 .model n1 npn bf=100 tf=2n cjc=1p is=5e-18 NF=1.07 .model diode d rs=1 cjo=2p .ends *SRC=AZ23C10;DI_AZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.35 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.47f RS=3.45 N=2.23 ) .ENDS *SRC=AZ23C10W;DI_AZ23C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C10W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.32 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=3.45 N=2.23 ) .ENDS *SRC=AZ23C11;DI_AZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.79 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10 + CJO=41.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.25f RS=4.60 N=2.97 ) .ENDS *SRC=AZ23C12;DI_AZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=4.60 N=2.97 ) .ENDS *SRC=AZ23C13;DI_AZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=37.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.90f RS=9.46 N=3.00 ) .ENDS *SRC=AZ23C15;DI_AZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=14.5 N=3.00 ) .ENDS *SRC=AZ23C16;DI_AZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.54f RS=24.5 N=3.00 ) .ENDS *SRC=AZ23C18;DI_AZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=34.5 N=3.00 ) .ENDS *SRC=AZ23C18W;DI_AZ23C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C18W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=34.5 N=3.00 ) .ENDS *SRC=AZ23C20;DI_AZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=34.5 N=3.00 ) .ENDS *SRC=AZ23C22;DI_AZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=39.5 N=3.00 ) .ENDS *SRC=AZ23C24;DI_AZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=64.5 N=3.00 ) .ENDS *SRC=AZ23C27;DI_AZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=20.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=64.5 N=3.00 ) .ENDS *SRC=AZ23C2V7;DI_AZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.263 .MODEL DF D ( IS=45.8p RS=35.3 N=1.10 + CJO=450p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16f RS=67.5 N=3.00 ).ENDS *SRC=AZ23C30;DI_AZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=19.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=64.5 N=3.00 ).ENDS *SRC=AZ23C33;DI_AZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=64.5 N=3.00 ).ENDS *SRC=AZ23C36;DI_AZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=74.5 N=3.00 ).ENDS *SRC=AZ23C39;DI_AZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=17.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34e-016 RS=74.5 N=3.00 ).ENDS *SRC=AZ23C3V0;DI_AZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.495 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10 + CJO=417p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C3V3;DI_AZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.787 .MODEL DF D ( IS=37.5p RS=34.7 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C3V6;DI_AZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C3V9;DI_AZ23C3V9;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C43;DI_AZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=16.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75e-016 RS=84.5 N=3.00 ).ENDS *SRC=AZ23C47;DI_AZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=2.63p RS=27.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.26e-016 RS=84.5 N=3.00 ).ENDS *SRC=AZ23C4V3;DI_AZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.77 .MODEL DF D ( IS=28.7p RS=34.0 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75f RS=79.5 N=3.00 ).ENDS *SRC=AZ23C4V7;DI_AZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.24 .MODEL DF D ( IS=26.3p RS=33.7 N=1.10 + CJO=350p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.26f RS=62.5 N=3.00 ).ENDS *SRC=AZ23C51;DI_AZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.2 .MODEL DF D ( IS=2.42p RS=26.9 N=1.10 + CJO=16.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85e-016 RS=84.5 N=3.00 ).ENDS *SRC=AZ23C5V1;DI_AZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.73 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85f RS=44.5 N=3.00 ).ENDS *SRC=AZ23C5V6;DI_AZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN *VERSION=2 .SUBCKT DI_AZ23C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.32 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 CJO=102p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41f RS=24.5 N=3.00 ) .ENDS *SRC=AZ23C5V6W;DI_AZ23C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C5V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=102p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=AZ23C6V2;DI_AZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.99f RS=2.30 N=1.49 ).ENDS *SRC=AZ23C6V8;DI_AZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.93 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.64f RS=1.84 N=1.19 ).ENDS *SRC=AZ23C6V8W;DI_AZ23C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V8W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=AZ23C7V5;DI_AZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.74 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=59.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.30f RS=1.61 N=1.04 ).ENDS *SRC=AZ23C8V2;DI_AZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.01f RS=1.61 N=1.04 ).ENDS *SRC=AZ23C9V1;DI_AZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.00 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.72f RS=2.30 N=1.49 ).ENDS .subckt AZ431A ANODE CATHODE REF Q10 Cathode Q10_B Q10_E 0 n1 Q3 Q3_C Q3_B Q3_E 0 n1 Q11 Cathode Q11_B Anode 0 n1 Q1 Cathode REF Q3_B 0 n1 Q8 Q3_C Q3_C Q8_E 0 p1 Q9 Q10_B Q3_C Q9_E 0 p1 C1 Cathode Q10_B 14p C2 Q6_C Q6_B 13p Q5 Q5_C Q5_C Anode 0 n1 Q4 Q6_B Q5_C Q4_E 0 n1 Q7 Q10_B Q7_B Anode 0 n1 Q6 Q6_C Q6_B Anode 0 n1 Q2 Q10_B Q10_B REF 0 n1 R7 Q3_E Q6_C 4.1K R6 Q5_C Q7_B 1.29K R5 Q4_E Anode 0.936K R28 R1_N Q6_B 7.488K R4 R1_N Q5_C 2.808K R1 Q3_B R1_N 5.4K R9 Cathode Q9_E 1.01K R8 Cathode Q8_E 1.01K R10 Q10_E Q11_B 263.8 R11 Q11_B Anode 8.9K .model p1 pnp bf=50 .model n1 npn bf=100 tf=2n cjc=1p is=5e-18 NF=1.07 *.model diode d rs=1 cjo=2p .ends .subckt AZ431L ANODE CATHODE REF D0 ANODE REF DIODE Q38 CATHODE ANODE ANODE 0 n1 R1 REF Q25_B 4.2K Q25 CATHODE Q25_B Q25_E 0 n1 R4 Q25_E R4_N 25.6K R14 R4_N R14_N 89.6K R3 R14_N R3_N 25.5K R12 R3_N ANODE 76.8K R13 R4_N Q28_B 4.2K Q28 Q25_E Q28_B R33_P 0 n1 R33 R33_P R33_N 10.25K R8 R33_N ANODE 132K R27 Q29_E ANODE 222K Q29 Q29_C R2_N Q29_E n1 R2 REF R2_N 960K Q44 Q29_C Q29_C CATHODE 0 P1 Q45 Q29_E Q29_C CATHODE 0 P1 Q46 Q46_C Q29_C CATHODE 0 P1 Q47 Q47_C Q29_C CATHODE 0 P1 Q0 ANODE R14_N Q46_C 0 P1 Q1 ANODE R3_N Q47_C 0 P1 Q30 Q30_C Q47_C R28_P 0 n1 8 Q31 Q31_C Q46_C R28_P 0 n1 Q49 Q30_C Q30_C CATHODE 0 P1 Q48 Q31_C Q30_C CATHODE 0 P1 R28 R28_P ANODE 6.5K C0 Q31_C R17_P 26p Q27 R17_P Q31_C CATHODE 0 P1 R17 R17_P ANODE 33K Q33 Q33_C R17_P R23_P 0 n1 R23 R23_P ANODE 865 Q52 Q33_C Q33_C CATHODE 0 P1 Q51 Q51_C Q33_C CATHODE 0 P1 10 Q37 Q51_C Q51_C R23_P 0 n1 20 Q35 CATHODE Q51_C ANODE 0 n1 100 .model p1 pnp bf=50 .model n1 npn bf=100 tf=2n cjc=1p is=5e-18 NF=1.07 .model diode d rs=1 cjo=2p .ends *SRC=B0520LW;DI_B0520LW;Diodes;Si; 20.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0520LW D ( IS=195u RS=49.4m BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.72 TT=7.20n ) *SRC=B0520WS;DI_B0520WS;Schottky rectifier *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=7OCT2011 *VERSION=1 .MODEL B0520WS D ( IS=1.5u RS=0.16 ISR=3u BV=22.0 IBV=.5m + CJO=107p M=0.45 VJ=.38 N=0.907 TT=5.6n EG=.69 XTI=.3 TBV1=.0001 TRS1=.0048) .SIMULATOR DEFAULT *SRC=B0530W;DI_B0530W;Diodes;Si; 30.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0530W D ( IS=47.4u RS=26.8m BV=30.0 IBV=130u + CJO=225p M=0.333 N=1.66 TT=7.20n ) *SRC=B0530WS;DI_B0530WS;Diodes;Si; 30.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0530WS D ( IS=897u RS=72.9m BV=30.0 IBV=500u + CJO=79.6p M=0.333 N=2.85 TT=14.4n ) *SRC=B0540W;DI_B0540W;Diodes;Si; 40.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0540W D ( IS=55.9p RS=0.125 BV=40.0 IBV=20.0u + CJO=225p M=0.333 N=0.700 TT=14.4n ) *B0540WS Spice Model v1.0 Last Revised 5/23/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_B0540WS D ( IS=520.0n RS=130.0m BV=50.00 IBV=10.00 + CJO=150.0p M=400.0m N=1.100 TT=11.65n EG=480.0m VJ=44.67m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=B1100;DI_B1100;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100 D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B1100B;DI_B1100B;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100B D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B1100LB;DI_B1100LB;Diodes;Si; 100V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B1100LB D ( IS=20.0n RS=24.7m BV=100 IBV=500n + CJO=225p M=0.333 N=1.22 TT=14.4n ) *SRC=B120;DI_B120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120 D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B120B;DI_B120B;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120B D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130;DI_B130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130 D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130B;DI_B130B;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130B D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130L;DI_B130L;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130L D ( IS=188u RS=18.5m BV=30.0 IBV=1.00m + CJO=331p M=0.333 N=1.65 TT=7.20n ) *SRC=B130LAW;DI_B130LAW;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130LAW D ( IS=407u RS=75.5m BV=30.0 IBV=1.00m + CJO=119p M=0.333 N=1.70 TT=7.20n ) *SRC=B130LB;DI_B130LB;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B130LB D ( IS=458u RS=28.0m BV=30.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) *SRC=B140;DI_B140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140 D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140B;DI_B140B;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140B D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140HB;DI_B140HB;Diodes;Si; 40.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B140HB D ( IS=31.0u RS=42.1m BV=40.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) *SRC=B140HW;DI_B140HW;Diodes;Si; 40.0V 1.00A 11.0ns Diodes Incorporated Schottky diode .MODEL DI_B140HW D ( IS=123n RS=66.4m BV=40.0 IBV=40.0u + CJO=119p M=0.333 N=1.07 TT=15.8n ) *SRC=B150;DI_B150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150 D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B150B;DI_B150B;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150B D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B160;DI_B160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160 D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B160B;DI_B160B;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160B D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B170;DI_B170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170 D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B170B;DI_B170B;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170B D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180;DI_B180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180 D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180B;DI_B180B;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180B D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190;DI_B190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190 D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190B;DI_B190B;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190B D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B2100;DI_B2100;Diodes;Si; 100.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B2100 D ( IS=746u RS=21.0m BV=100.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B220;DI_B220;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220 D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B220A;DI_B220A;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220A D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230;DI_B230;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230 D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230A;DI_B230A;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230A D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240;DI_B240;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240 D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240A;DI_B240A;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B250;DI_B250;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250 D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B250A;DI_B250A;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250A D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260;DI_B260;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260 D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260A;DI_B260A;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260A D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B270;DI_B270;Diodes;Si; 70.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B270 D ( IS=746u RS=21.0m BV=70.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B280;DI_B280;Diodes;Si; 80.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B280 D ( IS=746u RS=21.0m BV=80.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B290;DI_B290;Diodes;Si; 90.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B290 D ( IS=746u RS=21.0m BV=90.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B3100;DI_B3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B3100 D ( IS=916u RS=14.1m BV=100 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B320;DI_B320;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320A;DI_B320A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320B;DI_B320B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330;DI_B330;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330A;DI_B330A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330B;DI_B330B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340;DI_B340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340 D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340A;DI_B340A;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340A D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340B;DI_B340B;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340B D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340LA;DI_B340LA;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LA D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B340LB;DI_B340LB;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LB D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B350;DI_B350;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350 D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350A;DI_B350A;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350A D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350B;DI_B350B;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350B D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360;DI_B360;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360 D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360A;DI_B360A;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360A D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *B360AM-13-F Spice Model v1.0 Last Revised 7/29/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_B360AM-13-F D ( IS=763.8n RS=40.55m BV=70.00 IBV=10.00 + CJO=433.4p M=470.4m N=1.190 TT=9.984n EG=480.0m VJ=458.3m ) *SRC=B360B;DI_B360B;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360B D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B370;DI_B370;Diodes;Si; 70.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B370 D ( IS=916u RS=14.1m BV=70.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B380;DI_B380;Diodes;Si; 80.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B380 D ( IS=916u RS=14.1m BV=80.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B390;DI_B390;Diodes;Si; 90.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B390 D ( IS=916u RS=14.1m BV=90.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B3L30LP;DI_B3L30LP;Diodes;Si; 30.0V 3.00A 15.0ns Diodes INC Schottky rectifier .MODEL DI_B3L30LP D ( IS=25.1u RS=12.5m BV=30.0 IBV=450u + CJO=517p M=0.333 N=1.03 TT=21.6n ) *SRC=B520C;DI_B520C;Diodes;Si; 20.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B520C D ( IS=617u RS=10.0m BV=20.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B530C;DI_B530C;Diodes;Si; 30.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B530C D ( IS=617u RS=10.0m BV=30.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) .LIB B540C * .MODEL B540C D ( +LEVEL = 1 IS = 1.5672e-06 RS = 0.0209949 +N = 1.01362 IBV = 0.0001 CJO = 8.98694e-10 +VJ = 0.396195 MJ = 0.457747 FC = 0.5 +XTI = 0.000352915 EG = 0.750278 TRS1 = 0.00406277 +TRS2 = 2.17553e-07 BV = 50 TT = 0 ) * .ENDL B540C *SRC=B550C;DI_B550C;Diodes;Si; 50.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B550C D ( IS=66.7u RS=14.1m BV=50.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B560C;DI_B560C;Diodes;Si; 60.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B560C D ( IS=66.7u RS=14.1m BV=60.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=BAL99;DI_BAL99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAL99 D ( IS=31.2n RS=0.360 BV=75.0 IBV=2.50u + CJO=1.72p M=0.333 N=2.35 TT=5.76n ) *SRC=BAS116;DI_BAS116;Diodes;Si; 60.0V 0.215A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAS116 D ( IS=4.53u RS=0.383 BV=60.0 IBV=5.00n + CJO=1.72p M=0.333 N=4.07 TT=4.32u ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=13/11/2013 *VERSION=1 .model BAS116LP3 D(IS=4f RS=0.1 CJO=2.37p M=0.4 VJ=0.6 ISR=.005n N=1.05 IKF=1m + BV=85 IBV=100u TT=40n EG=1.14 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=BAS116T;DI_BAS116T;Diodes;Si; 85.0V 0.215A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAS116T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAS116UDJ; 400V 0.3A 50.0ns Diodes Inc. Switching Diode D1 1 = A 2 = C DI_BAS116UDJ .MODEL DI_BAS116UDJ D + IS = 1.1p + N = 1.42 + BV = 400 + IBV = 1.00u + RS = 0.350 + CJO = 1.95p + VJ = 60m + M = 173m + FC = 0.5 + TT = 50n *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching .MODEL DI_MMBD4148 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.60 TT=5.76n ) *SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HLP D ( IS=5.31n RS=0.761 BV=80.0 IBV=100n + CJO=3.56p M=0.333 N=1.90 TT=5.76n ) *SRC=BAS16LP;DI_BAS16LP;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16LP D ( IS=74.3n RS=0.699 BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.35 TT=5.76n ) *SRC=BAS16T;DI_BAS16T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ************************************************************************************************************************ *SRC=BAS16TW;DI_BAS16TW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16TW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAS16V;DI_BAS16V;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching diode - one element of device .MODEL DI_BAS16V D ( IS=412p RS=0.140 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=1.70 TT=5.76n ) *SRC=BAS16W;DI_BAS16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAS19;DI_BAS19;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS19 D ( IS=41.7n RS=0.270 BV=100 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) *SRC=BAS19W;DI_BAS19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS19W D ( IS=114n RS=0.172 BV=100 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) *SRC=BAS20;DI_BAS20;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS20 D ( IS=41.7n RS=0.270 BV=150 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) *SRC=BAS20DW;DI_BAS20DW;Diodes;Si; 200V 0.300A 50.0ns Diodes Inc. Single Element of Dual BAS20DW .MODEL DI_BAS20DW D ( IS=2.86n RS=0.141 BV=200 IBV=100n + CJO=2.98p M=0.333 N=1.95 TT=72.0n ) *SRC=BAS20W;DI_BAS20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS20W D ( IS=114n RS=0.172 BV=150 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) *SRC=BAS21;DI_BAS21;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21 D ( IS=41.7n RS=0.270 BV=200 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) *SRC=BAS21DW;DI_BAS21DW;Diodes;Si; 250V 0.300A 50.0ns Diodes Inc. Single Element of Dual BAS21DW .MODEL DI_BAS21DW D ( IS=2.86n RS=0.141 BV=250 IBV=100n + CJO=2.98p M=0.333 N=1.95 TT=72.0n ) *SRC=BAS21T;DI_BAS21T;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21T D ( IS=401n RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=2.87 TT=72.0n ) *SRC=BAS21TWQ;DI_BAS21TWQ;Diodes;Si; 250V 0.200A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21T D ( IS=830f RS=0.751 BV=250 IBV=100µ + CJO=0.69p M=0.0963 N=1.43 TT=72.0n ) *SRC=BAS21W;DI_BAS21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21W D ( IS=114n RS=0.172 BV=200 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) *SRC=BAS40;DI_BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) * * This model account for one of the two diodes contained in the * BAS40-4 device. The other one is totally identical. * .LIB BAS40_04 * .SUBCKT BAS40_04 A K * D1 A K BAS40_1 D2 A K1 BAS40_2 V1 K1 K DC 217e-3 * .MODEL BAS40_1 D ( +LEVEL = 1 IS = 2.24014e-09 RS = 7.23547 +N = 1.02505 IKF = 0.255776 +CJO = 3.0881e-12 VJ = 119.67e-3 MJ = 183.18e-3 +FC = 0.5 XTI = 0.60541 EG = 0.75453 +TRS1 = 0.00733869 TRS2 = 1.45813e-05 IBV = 0.01 +BV = 40 TT = 6.02e-9 ) * .MODEL BAS40_2 D ( +LEVEL = 1 IS = 5.04958e-11 RS = 0.00692754 +N = 1.10729 XTI = 1.45276 EG = 1.46766 +TRS1 = 0.0021771 TRS2 = 0.000729073 IKF = 0.0102054 +IBV = 0.01 BV = 1e3 TT = 0 ) * .ENDS BAS40_04 * .ENDL BAS40_04 *SRC=BAS40-04T;DI_BAS40-04T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-04T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-05;DI_BAS40-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-05T;DI_BAS40-05T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-06;DI_BAS40-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-06T;DI_BAS40-06T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40BRW;DI_BAS40BRW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40BRW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-04;DI_BAS40DW-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-05;DI_BAS40DW-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-06;DI_BAS40DW-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40LP;DI_BAS40LP;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc Schottky .MODEL DI_BAS40LP D ( IS=2.93u RS=1.29 BV=40.0 IBV=200n + CJO=2.30p M=0.333 N=2.39 TT=7.20n ) *SRC=BAS40T;DI_BAS40T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40TW;DI_BAS40TW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Tripple, one node of three .MODEL DI_BAS40TW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W;DI_BAS40W;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40W D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-04;DI_BAS40W-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-05;DI_BAS40W-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-06;DI_BAS40W-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS521;BAS521;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode .MODEL BAS521 D ( IS=74.8n RS=0.288 BV=300 IBV=150n + CJO=810f M=0.333 N=2.41 TT=72.0n ) *SRC=BAS521LP;BAS521LP;Diodes;Si; 325V 0.250A 50.0ns DIODES Switching Diode .MODEL BAS521LP D ( IS=74.8n RS=0.288 BV=325 IBV=150n + CJO=810f M=0.333 N=2.41 TT=72.0n ) *SRC=BAS70;DI_BAS70;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. - .MODEL DI_BAS70 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-04;DI_BAS70-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-04T;DI_BAS70-04T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-05;DI_BAS70-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-05T;DI_BAS70-05T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-06;DI_BAS70-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-06T;DI_BAS70-06T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70BRW;DI_BAS70BRW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70BRW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-04;DI_BAS70DW-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-05;DI_BAS70DW-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-06;DI_BAS70DW-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70JW;DI_BAS70JW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70JW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *BAS70LP;Schottky rectifier *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11NOV2011 *VERSION=1 .MODEL BAS70LP D ( IS=1.5n RS=14 ISR=3n BV=75 NBV=300 IBV=15n IKF=.4m + CJO=2.04p M=0.19 VJ=.4 N=.99 TT=1.6n EG=.8 XTI=.3 TBV1=.0001 TRS1=.0048) .SIMULATOR DEFAULT *SRC=BAS70T;DI_BAS70T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70TW;DI_BAS70TW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAS70TW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W;DI_BAS70W;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70W D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-04;DI_BAS70W-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-05;DI_BAS70W-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-06;DI_BAS70W-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT1000;DI_BAT1000;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_BAT1000 D ( IS=874n RS=65.3m BV=40.0 IBV=100u + CJO=175p M=0.333 N=0.823 TT=7.20n ) *SRC=BAT400D;DI_BAT400D;Diodes;Si; 40.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT400D D ( IS=1.80u RS=0.103 BV=40.0 IBV=50.0u + CJO=119p M=0.333 N=1.26 TT=7.20n ) *SRC=BAT40V;DI_BAT40V;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT40V D ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u + CJO=11.9p M=0.333 N=1.14 TT=7.20n ) *SRC=BAT40VC;DI_BAT40VC;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT40VC D ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u + CJO=11.9p M=0.333 N=1.14 TT=7.20n ) *SRC=BAT42W;DI_BAT42W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT42WS;DI_BAT42WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT43W;DI_BAT43W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT43WS;DI_BAT43WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT46W;DI_BAT46W;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT46W D ( IS=603n RS=0.280 BV=100 IBV=5.00u + CJO=7.96p M=0.333 N=1.70 TT=7.20n ) *ZETEX BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-12 M=0.381 VJ=0.391 +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99 * *$ * * *Zetex BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-12 M=0.381 VJ=0.391 +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99 * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=BAT54A;DI_BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54ADW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *BAT54AQ Spice Model v1.0 Last Revised 12/16/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_BAT54AQ D ( IS=44.06n RS=1.384m BV=33.0 IBV=10.00 + CJO=13.21p M=348.2m N=1.086 TT=2.168n EG=480.0m VJ=187.5m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=BAT54AT;DI_BAT54AT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54AW;DI_BAT54AW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54BRW;DI_BAT54BRW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54BRW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54C;DI_BAT54C;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54C D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CDW;DI_BAT54CDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54CDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CT;DI_BAT54CT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CW;DI_BAT54CW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) ******************************************************************************************************************************************* *SRC=BAT54DW;DI_BAT54DW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky, dual, one of two nodes .MODEL DI_BAT54DW D ( IS=235n RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=1.28 TT=7.20n ) ******************************************************************************************************************************************* *SRC=BAT54JW;DI_BAT54JW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54JW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *BAT54LP Spice Model v1.0 Last Revised 08/04/2014 Diodes Inc SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_BAT54LP D ( IS=98.64n RS=1.080 BV=40.00 IBV=10.00 + CJO=222.3p M=548.8m N=1.140 TT=10.00n EG=480.0m VJ=5.075m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=BAT54LPS;DI_BAT54LPS;Diodes;Si; 30.0V 0.200A 2.00ns Diodes Inc. SBR/ SKY .MODEL DI_BAT54LPS D ( IS=20.9n RS=0.895 BV=30.0 IBV=2.00u + CJO=10.6p M=0.333 N=1.07 TT=2.88n ) *SRC=BAT54S;DI_BAT54S;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54S D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54SDW;DI_BAT54SDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54SDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54ST;DI_BAT54ST;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54ST D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54SW;DI_BAT54SW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54SW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54T;DI_BAT54T;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54T D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54TW;DI_BAT54TW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAT54TW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54V;DI_BAT54V;Diodes;Si; 29.6V 0.200A 5.00ns Diodes Inc. One Element of Dual Schottky Diodes .MODEL DI_BAT54V D ( IS=124n RS=0.210 BV=29.6 IBV=2.00 + CJO=13.3 M=0.333 N=1.19 TT=7.20n ) *SRC=BAT54W;DI_BAT54W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54W D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54WS;DI_BAT54WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54WS D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *BAT64T5 Spice Model v1.0 Last Revised 9/26/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_BAT64T5 D ( IS=91.89n RS=1.013m BV=44.0 IBV=10.00 + CJO=222.2p M=599.0m N=1.143 TT=1.909n EG=480.0m VJ=8.481m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=BAT750;DI_BAT750;Diodes;Si; 40.0V 0.750A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT750 D ( IS=23.1u RS=82.3m BV=40.0 IBV=100u + CJO=225p M=0.333 N=1.16 TT=7.20n ) .MODEL BAT750 D IS=7E-6 N=0.99 RS=130E-3 IKF=0.15 XTI=2 EG=0.58 + CJO=184.9p M=0.523 VJ=0.3905 Fc=0.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * *SRC=BAT760;DI_BAT760;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_BAT760 D ( IS=10.6u RS=49.9m BV=30.0 IBV=50.0u + CJO=49.3p M=0.333 N=1.35 TT=14.4n ) *SRC=BAV116W;DI_BAV116W;Diodes;Si; 130V 0.215A 3.00us Diodes Inc. Low leakage diode .MODEL DI_BAV116W D ( IS=22.5p RS=0.282 BV=130 IBV=5.00n + CJO=2.40p M=0.333 N=1.67 TT=4.32u ) *SRC=BAV16W;BAV16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. - .MODEL BAV16W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=BAV16WS;BAV16WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL BAV16WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=BAV170;DI_BAV170;Diodes;Si; 85.0V 0.215A 3.00us Diodes, Inc. diode .MODEL DI_BAV170 D ( IS=31.5p RS=0.195 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.70 TT=4.32u *SRC=BAV170T;DI_BAV170T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAV170T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAV199;DI_BAV199;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode .MODEL DI_BAV199 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=BAV199DW;DI_BAV199DW;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of BAV199DW array .MODEL DI_BAV199DW D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=BAV199T;DI_BAV199T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAV199T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAV199W;DI_BAV199W;Diodes;Si; 85.0V 0.160A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAV199W D ( IS=22.5p RS=0.264 BV=85.0 IBV=10.0u + CJO=2.00 M=0.333 N=1.70 TT=4.32u ) *SRC=BAV19W;BAV19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. - .MODEL BAV19W D ( IS=1.09u RS=0.105 BV=100 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV19WS;BAV19WS;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL BAV19WS D ( IS=1.09u RS=0.105 BV=100 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV20W;DI_BAV20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. - .MODEL DI_BAV20W D ( IS=1.09u RS=0.105 BV=150 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV20WS;DI_BAV20WS;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV20WS D ( IS=1.09u RS=0.105 BV=150 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20Oct2017 *VERSION=1 .MODEL DI_BAV21WS D(IS=15p RS=0.5 IKF=1.3m VCJO=3.3p M=0.3 VJ=0.7 + BV=200 IBV=.03u TT=40n EG=1.1 TRS1=1u N=1.2 XTI=5) * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Di *SRC=BAV21WS;DI_BAV21WS;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV21WS D ( IS=1.09u RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV23A;DI_BAV23A;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23A D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) *SRC=BAV23C;DI_BAV23C;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23C D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) *SRC=BAV23S;DI_BAV23S;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23S D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) *SRC=BAV3004W;DI_BAV3004W;Diodes;Si; 350V 0.225A 50.0ns Diodes, Inc. switching .MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n + CJO=1.17p M=0.333 N=2.37 TT=72.0n ) *SRC=BAV3004WS;DI_BAV3004WS;Diodes;Si; 350V 0.225A 50.0ns Diodes, Inc. switching .MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n + CJO=1.17p M=0.333 N=2.37 TT=72.0n ) *SRC=BAV5004LP; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_BAV5004LP .MODEL DI_BAV5004LP D + IS = 10n + N = 2.15 + BV = 400 + IBV = 1.00u + RS = 0.6 + CJO = 0.90p + VJ = 55m + M = 28m + FC = 0.5 + TT = 50n *SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV70T;DI_BAV70T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAV70T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=BAV70W;DI_BAV70W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAV70W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAV756DW;DI_BAV756DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching - one element of device .MODEL DI_BAV756DW D ( IS=49.2n RS=0.141 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=2.45 TT=5.76n ) *SRC=BAV99;DI_BAV99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. switching .MODEL DI_BAV99 D ( IS=261p RS=0.140 BV=75.0 IBV=2.50u + CJO=1.19p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV99BRW;DI_BAV99BRW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element .MODEL DI_BAV99BRW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV99DW;DI_BAV99DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element .MODEL DI_BAV99DW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV99T;DI_BAV99T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAV99T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=BAV99W;DI_BAV99W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAV99W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW101S;BAW101S;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode .MODEL BAW101S D ( IS=74.8n RS=0.288 BV=300 IBV=150n + CJO=700f M=0.333 N=2.41 TT=72.0n ) *SRC=BAW101V;BAW101V;Diodes;Si; 325V 0.250A 50.0ns DIODES Switching Diode .MODEL BAW101V D ( IS=74.8n RS=0.288 BV=325 IBV=150n + CJO=700f M=0.333 N=2.41 TT=72.0n ) *SRC=BAW156;DI_BAW156;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode .MODEL DI_BAW156 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=BAW156T;DI_BAW156T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAW156T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAW56;DI_BAW56;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW567DW;DI_BAW567DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW567DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW56DW;DI_BAW56DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW56T;DI_BAW56T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAW56T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=BAW56W;DI_BAW56W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *DIODES_BC56-16PAWQ_SPICE_MODEL *DATE=26Jun2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL BC56-16PAWQ NPN (IS=35.7f NF=1.00 BF=161 VAF=161 + IKF=1.65 ISE=1.6p NE=2.00 BR=32.00 NR=1.00 NK=0.79 ISC=67.2p NC=1.56 + VAR=28.0 IKR=3.00 RE=113.2m RB=0.586 RC=58.6m RCO=0.05 + XTB=1.5 CJE=175.8p VJE=1.10 MJE=0.500 CJC=191.6p VJC=0.300 + MJC=0.300 TF=24.4n TR=18.1n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=50n QUASIMOD=1 ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *SRC=BC807-16;DI_BC807-16;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-16 PNP (IS=50.7f NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=24.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=111n EG=1.12 ) *SRC=BC807-16W;DI_BC807-16W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-16W NPN (IS=49.9f NF=1.00 BF=342 VAF=121 + IKF=0.182 ISE=19.6p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=112n EG=1.12 *SRC=BC807-25;DI_BC807-25;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-25 PNP (IS=50.7f NF=1.00 BF=547 VAF=121 + IKF=0.273 ISE=15.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=109n EG=1.12 ) *SRC=BC807-25W;DI_BC807-25W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-25W NPN (IS=49.9f NF=1.00 BF=547 VAF=121 + IKF=0.182 ISE=12.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=110n EG=1.12 ) *SRC=BC807-40;DI_BC807-40;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-40 PNP (IS=50.7f NF=1.00 BF=821 VAF=121 + IKF=0.273 ISE=10.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=108n EG=1.12 ) *SRC=BC807-40;DI_BC807-40;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-40 PNP (IS=50.7f NF=1.00 BF=821 VAF=121 + IKF=0.273 ISE=10.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=108n EG=1.12 ) *SRC=BC807-40W;DI_BC807-40W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-40W NPN (IS=49.9f NF=1.00 BF=821 VAF=121 + IKF=0.182 ISE=8.17p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=109n EG=1.12 ) *SRC=BC817-16;DI_BC817-16;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-16 NPN (IS=4.04n NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=6.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=111n EG=1.12 ) *SRC=BC817-16;DI_BC817-16;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-16 NPN (IS=4.04n NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=6.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=111n EG=1.12 ) *SRC=BC807-16W;DI_BC807-16W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-16W NPN (IS=49.9f NF=1.00 BF=342 VAF=121 + IKF=0.182 ISE=19.6p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=112n EG=1.12 *SRC=BC817-25;DI_BC817-25;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-25 NPN (IS=4.04n NF=1.00 BF=548 VAF=121 + IKF=0.273 ISE=4.29n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=109n EG=1.12 ) *SRC=BC817-25;DI_BC817-25;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-25 NPN (IS=4.04n NF=1.00 BF=548 VAF=121 + IKF=0.273 ISE=4.29n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=109n EG=1.12 ) *SRC=BC807-25W;DI_BC807-25W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-25W NPN (IS=49.9f NF=1.00 BF=547 VAF=121 + IKF=0.182 ISE=12.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=110n EG=1.12 ) *SRC=BC817-40;DI_BC817-40;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-40 NPN (IS=4.04n NF=1.00 BF=822 VAF=121 + IKF=0.273 ISE=2.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=108n EG=1.12 ) *SRC=BC817-40;DI_BC817-40;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-40 NPN (IS=4.04n NF=1.00 BF=822 VAF=121 + IKF=0.273 ISE=2.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=108n EG=1.12 ) *SRC=BC807-40W;DI_BC807-40W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-40W NPN (IS=49.9f NF=1.00 BF=821 VAF=121 + IKF=0.182 ISE=8.17p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=109n EG=1.12 ) *SRC=BC846A;DI_BC846A;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846A NPN (IS=10.2f NF=1.00 BF=305 VAF=145 + IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=416p TR=50.3n EG=1.12 ) *SRC=BC846A;DI_BC846A;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846A NPN (IS=10.2f NF=1.00 BF=305 VAF=145 + IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=416p TR=50.3n EG=1.12 ) *SRC=BC846AS;DI_BC846AS;BJTs NPN; Si; 65.0V 0.100A 250MHz Diodes Inc .MODEL DI_BC846AS PNP (IS=10.1f NF=1.00 BF=301 VAF=145 + IKF=54.7m ISE=5.50p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.705 RB=2.82 RC=0.282 + XTB=1.5 CJE=19.1p VJE=1.10 MJE=0.500 CJC=5.37p VJC=0.300 + MJC=0.300 TF=564p TR=98.4n EG=1.12 *SRC=BC846AS;DI_BC846AS;BJTs NPN; Si; 65.0V 0.100A 250MHz Diodes Inc .MODEL DI_BC846AS PNP (IS=10.1f NF=1.00 BF=301 VAF=145 + IKF=54.7m ISE=5.50p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.705 RB=2.82 RC=0.282 + XTB=1.5 CJE=19.1p VJE=1.10 MJE=0.500 CJC=5.37p VJC=0.300 + MJC=0.300 TF=564p TR=98.4n EG=1.12 *SRC=BC846AW;DI_BC846AW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846AW NPN (IS=10.2f NF=1.00 BF=305 VAF=145 + IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=416p TR=50.3n EG=1.12 ) *SRC=BC846B;DI_BC846B;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846B NPN (IS=10.2f NF=1.00 BF=650 VAF=145 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=385p TR=49.0n EG=1.12 ) *DIODES_INC_SPICE_MODEL BC846BLP4 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=27Mar2013 *VERSION=1 .MODEL BC846BLP4 NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 + RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=BC846B;DI_BC846B;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846B NPN (IS=10.2f NF=1.00 BF=650 VAF=145 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=385p TR=49.0n EG=1.12 ) *SRC=BC846BW;DI_BC846BW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846BW NPN (IS=10.2f NF=1.00 BF=650 VAF=145 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=385p TR=49.0n EG=1.12 ) *SRC=BC846BW;DI_BC846BW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846BW NPN (IS=10.2f NF=1.00 BF=650 VAF=145 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=385p TR=49.0n EG=1.12 ) *SRC=BC847A;DI_BC847A;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847A NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) *SRC=BC847A;DI_BC847A;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847A NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) *SRC=BC847AT;DI_BC847AT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847AT NPN (IS=9.98f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.75p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=50.3n EG=1.12 ) *SRC=BC847AW;DI_BC847AW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847AW NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) *SRC=BC847B;DI_BC847B;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847B NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *DIODES_INC_SPICE_MODEL BC847BFA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL BC847BFA NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL BC847BFA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL BC847BFA NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL BC847BFAQ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013_package updated Jan2019 *VERSION=1.0 .MODEL BC847BFAQ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL BC847BFZ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013_package updated Jan2019 *VERSION=1.0 .MODEL BC847BFZ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=BC847BLP;DI_BC847BLP;BJTs NPN; Si; 45.0V 0.100A 280MHz - .MODEL DI_BC847BLP NPN (IS=5.62f NF=1.00 BF=450 VAF=121 + IKF=70.3m ISE=191f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.120 RE=0.700 RB=2.80 RC=0.280 + XTB=1.5 CJE=14.6p VJE=1.10 MJE=0.500 CJC=6.93p VJC=0.300 + MJC=0.300 TF=541p TR=86.5n EG=1.12 ) *SRC=BC847BLP4;DI_BC847BLP4;BJTs NPN; Si; 45.0V 0.100A 450MHz .MODEL DI_BC847BLP4 NPN (IS=2.31f NF=1.00 BF=425 VAF=121 + IKF=58.6m ISE=3.67f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.700 RB=2.80 RC=0.280 + XTB=1.5 CJE=14.9p VJE=1.10 MJE=0.500 CJC=6.07p VJC=0.300 + MJC=0.300 TF=294p TR=53.9n EG=1.12 ) *SRC=BC847B;DI_BC847B;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847B NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *SRC=BC847BS;DI_BC847BS;BJTs NPN; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC847BS NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 MJC=0.300 + TF=585p TR=49.1n EG=1.12 ) *SRC=BC847BS;DI_BC847BS;BJTs NPN; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC847BS NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 MJC=0.300 + TF=585p TR=49.1n EG=1.12 ) *SRC=BC847BT;DI_BC847BT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847BT NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=49.1n EG=1.12 ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=SIMETRIX *DATE=13OCT2019 *VERSION=1 * .MODEL BC847BTQ NPN + IS=9.98f + NF=1.00 + BF=616 + VAF=121 + IKF=60.7m + ISE=2.81p + NE=2.00 + BR=4.00 + NR=1.00 + VAR=24.0 + IKR=0.150 + RE=0.815 + RB=3.26 + RC=0.326 + XTB=1.5 + CJE=26.8p + VJE=1.10 + MJE=0.500 + CJC=13.0p + VJC=0.300 + MJC=0.300 + TF=423p + TR=49.1n + EG=1.12 * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability = intrinsic base-intrinsic emitter voltage * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *DIODES_INC_SPICE_MODEL BC847BW *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013_package updated Jan2019 *VERSION=1.0 .MODEL BC847BW NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL BC847BW *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013_package updated Jan2019 *VERSION=1.0 .MODEL BC847BW NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=BC847C;DI_BC847C;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847C NPN (IS=10.3f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.61p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.965 RB=3.86 RC=0.386 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC847CDLP;DI_BC847CDLP;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc .MODEL DI_BC847CDLP NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.490 RB=1.96 RC=0.196 + XTB=1.5 CJE=13.4p VJE=1.10 MJE=0.500 CJC=5.92p VJC=0.300 + MJC=0.300 TF=481p TR=79.2n EG=1.12 ) *SRC=BC847C;DI_BC847C;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847C NPN (IS=10.3f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.61p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.965 RB=3.86 RC=0.386 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC847CT;DI_BC847CT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CT NPN (IS=9.98f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.58p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=48.6n EG=1.12 ) *SRC=BC847CW;DI_BC847CW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC847CW;DI_BC847CW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DIODES_INC_SPICE_MODEL_BC847PN *COMPLEMENTARY PAIR BC847/BC857 BAND B *DATE=03Jul2024 *SIMULATOR=SIMETRIX *ORIGIN=DT *VERSION=1.0 .MODEL BC847PN_NPN NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=5.81p NE=2.00 BR=4.00 NR=1.00 NC=1.00 NK=0.52 ISC=3.55E-15 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 RCO=29.8 VO=69 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=49.1n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.003 GAMMA=69.7n QUASIMOD=1) .MODEL BC847PN_PNP PNP (IS=5.51f NF=1.00 BF=324 VAF=35 + IKF=178.7m ISE=4.59f NE=2.00 BR=3.00 NR=1.00 NK=0.52 ISC=3.55f + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 RCO=39 VO=90 NC=1.56 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.003 GAMMA=21.5n QUASIMOD=1 ) * (c) 2023 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DIODES_INC_SPICE_MODEL_BC847PNQ *COMPLEMENTARY PAIR BC847/BC857 BAND B *DATE=03Apr2024 *SIMULATOR=SIMETRIX *ORIGIN=DT *VERSION=1.0 .MODEL BC847PNQ_NPN NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=5.81p NE=2.00 BR=4.00 NR=1.00 NC=1.00 NK=0.52 ISC=3.55E-15 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 RCO=29.8 VO=69 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=49.1n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.003 GAMMA=69.7n QUASIMOD=1) .MODEL BC847PNQ_PNP PNP (IS=5.51f NF=1.00 BF=324 VAF=35 + IKF=178.7m ISE=4.59f NE=2.00 BR=3.00 NR=1.00 NK=0.52 ISC=3.55f + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 RCO=39 VO=90 NC=1.56 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.003 GAMMA=21.5n QUASIMOD=1 ) * (c) 2023 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=BC848A;DI_BC848A;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848A NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848AW;DI_BC848AW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848AW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848B;DI_BC848B;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848B NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=49.1n EG=1.12 ) *SRC=BC848BW;DI_BC848BW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848BW NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=49.1n EG=1.12 ) *SRC=BC848C;DI_BC848C;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848C NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848C;DI_BC848C;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848C NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848CW;DI_BC848CW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC856A;DI_BC856A;BJTs PNP; Si; 65.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC856A PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC856A;DI_BC856A;BJTs PNP; Si; 65.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC856A PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC856AS;DI_BC856AS;BJTs PNP; Si; 65.0V 0.100A 400MHz Diodes Inc .MODEL DI_BC856AS PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=60.7m ISE=5.11p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.735 RB=2.94 RC=0.294 + XTB=1.5 CJE=21.1p VJE=1.10 MJE=0.500 CJC=7.67p VJC=0.300 + MJC=0.300 TF=314p TR=61.2n EG=1.12 ) *SRC=BC856AS;DI_BC856AS;BJTs PNP; Si; 65.0V 0.100A 400MHz Diodes Inc .MODEL DI_BC856AS PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=60.7m ISE=5.11p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.735 RB=2.94 RC=0.294 + XTB=1.5 CJE=21.1p VJE=1.10 MJE=0.500 CJC=7.67p VJC=0.300 + MJC=0.300 TF=314p TR=61.2n EG=1.12 ) *SRC=BC856AW;DI_BC856AW;BJTs PNP; Si; 65.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC856AW PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *DIODES_INC_SPICE_MODEL BC856B *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=21May2012 *VERSION=1 .MODEL BC856B PNP IS=15E-15 NF=1 BF=360 ISE=100E-18 NE=1.05 + BR=2 ISC=1.8E-14 NC=1.05 NR=1 CJC=8.26E-12 MJC=0.33 VJC=0.48 + CJE=14.6E-12 MJE=0.37 VJE=0.75 RC=.313 RE=.782 RB=3.5 VAF=20 IKF=130m XTB=1.4 NK=.7 QUASIMOD=1 RCO=1 EG=1.11 .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL BC856B *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=21May2012 *VERSION=1 .MODEL BC856B PNP IS=15E-15 NF=1 BF=360 ISE=100E-18 NE=1.05 + BR=2 ISC=1.8E-14 NC=1.05 NR=1 CJC=8.26E-12 MJC=0.33 VJC=0.48 + CJE=14.6E-12 MJE=0.37 VJE=0.75 RC=.313 RE=.782 RB=3.5 VAF=20 IKF=130m XTB=1.4 NK=.7 QUASIMOD=1 RCO=1 EG=1.11 .SIMULATOR DEFAULT *SRC=BC856BW;DI_BC856BW;BJTs PNP; Si; 80.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_BC856BW PNP (IS=3.90f NF=1.00 BF=408 VAF=161 + IKF=91.1m ISE=3.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.225 RE=0.782 RB=3.13 RC=0.313 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=548p TR=94.5n EG=1.12 ) *SRC=BC857A;DI_BC857A;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857A PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC857AT;DI_BC857AT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857AT PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=488p TR=97.8n EG=1.12 ) *SRC=BC857AW;DI_BC857AW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857AW PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC857B;DI_BC857B;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *DIODES_INC_SPICE_MODEL BC857BFA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL BC857BFA PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=BC857BLP;DI_BC857BLP;BJTs PNP; Si; 45.0V 0.100A 490MHz Diodes Inc. BJT .MODEL DI_BC857BLP PNP (IS=3.72f NF=1.00 BF=650 VAF=121 + IKF=54.7m ISE=1.54p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.135 RE=1.06 RB=4.26 RC=0.426 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=221p TR=49.1n EG=1.12 ) *SRC=BC857BLP4;DI_BC857BLP4;BJTs PNP; Si; 45.0V 0.100A 220MHz .MODEL DI_BC857BLP4 PNP (IS=2.24f NF=1.00 BF=333 VAF=121 + IKF=98.0m ISE=4.59f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.14 RB=4.58 RC=0.458 + XTB=1.5 CJE=14.8p VJE=1.10 MJE=0.500 CJC=8.09p VJC=0.300 + MJC=0.300 TF=659p TR=111n EG=1.12 ) *SRC=BC857B;DI_BC857B;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC857BS;DI_BC857BS;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_BC857BS PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 MJC=0.300 + TF=586p TR=95.9n EG=1.12 ) *SRC=BC857BS;DI_BC857BS;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_BC857BS PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 MJC=0.300 + TF=586p TR=95.9n EG=1.12 ) *SRC=BC857BT;DI_BC857BT;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) *SRC=BC857BW;DI_BC857BW;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857BW PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC857C;DI_BC857C;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=BC857C;DI_BC857C;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=BC857CT;DI_BC857CT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857CT PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=526p TR=95.0n EG=1.12 ) *SRC=BC857CW;DI_BC857CW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857CW PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=BC858A;DIBC858A;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DIBC858A PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC858AW;DI_BC858AW;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858AW PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC858B;DI_BC858B;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858B PNP (IS=10.2f NF=1.00 BF=650 VAF=98.6 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=586p TR=95.9n EG=1.12 ) *SRC=BC858BW;DI_BC858BW;BJTs PNP; Si; 30.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC858BW PNP (IS=5.51f NF=1.00 BF=424 VAF=98.6 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC858C;DI_BC858C;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *BCM857BS Spice models *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE= 12 February 2020 *VERSION=1 *#SIMETRIX ****************************************************************************** * This file contains 3 models: * BCM857BS_typ The typical model * BCM857BS_slow The -2% gain model * BCM857BS_fast The +2% gain model ****************************************************************************** * pin order C B E .subckt BCM857BS_fast 1 2 3 Q1 1 2 3 BCM857BS 0.93 .ends * pin order C B E .subckt BCM857BS_slow 1 2 3 Q1 1 2 3 BCM857BS 1.07 .ends * pin order C B E .subckt BCM857BS_typ 1 2 3 Q1 1 2 3 BCM857BS 1.00 .ends .MODEL BCM857BS PNP + IS=2e-14; + NF=1.00; + BF=650; 350; + VAF=121; + IKF=472m; + NK=1; + ISE=11.6p; 3.6e-12; 2.58p; + NE=2.00; + BR=4.00; + NR=1.00; + ISC = 1.633E-14; + NC = 1.15; + VAR=20; + IKR=0.105; + RE=0.715; + RB=2.86; ;+ IRB=5.0u; ;+ RBM=5u; + RC=1.286; + CJE=37.6p + VJE=1.10; + MJE=0.500 + CJC=12.1p + VJC=0.400; + MJC=0.300 + TF=499p + TR=95.9n + EG=1.11 ; + XTB=1.4; + XTI=3.0; *BCM857BV Spice models *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE= 12 February 2020 *VERSION=1 *#SIMETRIX ****************************************************************************** * This file contains 3 models: * BCM857BV_typ The typical model * BCM857BV_slow The -2% gain model * BCM857BV_fast The +2% gain model ****************************************************************************** * pin order C B E .subckt BCM857BV_fast 1 2 3 Q1 1 2 3 BCM857BV 0.93 .ends * pin order C B E .subckt BCM857BV_slow 1 2 3 Q1 1 2 3 BCM857BV 1.07 .ends * pin order C B E .subckt BCM857BV_typ 1 2 3 Q1 1 2 3 BCM857BV 1.00 .ends .MODEL BCM857BV PNP + IS=2e-14; + NF=1.00; + BF=650; 350; + VAF=121; + IKF=472m; + NK=1; + ISE=11.6p; 3.6e-12; 2.58p; + NE=2.00; + BR=4.00; + NR=1.00; + ISC = 1.633E-14; + NC = 1.15; + VAR=20; + IKR=0.105; + RE=0.715; + RB=2.86; ;+ IRB=5.0u; ;+ RBM=5u; + RC=1.286; + CJE=37.6p + VJE=1.10; + MJE=0.500 + CJC=12.1p + VJC=0.400; + MJC=0.300 + TF=499p + TR=95.9n + EG=1.11 ; + XTB=1.4; + XTI=3.0; + QUASIMOD=1 +GAMMA=1e-11; +RCO=0.2; +VO=10.0; ; ---- restivity temperature effects ;+TRB1=1 ;+TRB2=1 +TRC1=0.001; ;+TRC2=0.00001; +TRE1=0.001; *DIODES_INC_SPICE_MODEL BCP5316 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE=08-FEB-2021 *VERSION=1 .MODEL BCP5316 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * (c) 2021 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL BCP5516 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=24-APR-2013 *VERSION=1 .MODEL BCP5516 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX BCP56 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCP56 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BCP5610 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCP5610 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BCP5610 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCP5610 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BCP5616 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCP5616 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BCP5616 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCP5616 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *TITLE=BCR401UW6 *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR401UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 91 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR401UW6Q* DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR401UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 91 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR402UW6 *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR402UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 44 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR402UW6Q*DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR402UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 44 TC=3.5m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR405UW6 *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR405UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 16.5 TC=4m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=220.000f NF=0.995 BF=440 VAF=4.000 IKF=.18 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.08m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=BCR405UW6Q *DATE=12/05/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 *PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext .SUBCKT BCR405UW6 1 6 2 5 3 4 Q1 5 8 6 BCRPNP R1 8 1 22K TC=2m,8u R2 6 4 16.5 TC=4m,6u Rshort23 2 3 1m Rshort35 3 5 1m D1 4 9 BCRdiode D2 9 8 BCRdiode .MODEL BCRPNP PNP (IS=220.000f NF=0.995 BF=440 VAF=4.000 IKF=.18 + ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074 + RB=1.00 RE=0.82 RC=1.4 + CJE=10P VJE=0.9000 MJE=0.4 + CJC=10P VJC=0.900 MJC=0.55 + TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300) .model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.08m + M=.45 CJO=1E-14 EG=1.11E+00 + TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=31/03/2017 *VERSION=1 *PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND .SUBCKT BCR420UFD 1 2 3 4 5 6 Q1 2 8 5 BCRNPN R1 4 8 20K TC1=0.2m R2 5 6 95 TC1=2m D1 8 9 BCRdiode D2 9 6 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=31/03/2017 *VERSION=1 *PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND .SUBCKT BCR420UFD 1 2 3 4 5 6 Q1 2 8 5 BCRNPN R1 4 8 20K TC1=0.2m R2 5 6 95 TC1=2m D1 8 9 BCRdiode D2 9 6 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR420UW6 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 20K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR420UW6Q 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 20K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=12.5) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=31/03/2017 *VERSION=1 *PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND .SUBCKT BCR421UFD 1 2 3 4 5 6 Q1 2 8 5 BCRNPN R1 4 8 1.5K TC1=0.2m R2 5 6 95 TC1=2m D1 8 9 BCRdiode D2 9 6 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=31/03/2017 *VERSION=1 *PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND .SUBCKT BCR421UFD 1 2 3 4 5 6 Q1 2 8 5 BCRNPN R1 4 8 1.5K TC1=0.2m R2 5 6 95 TC1=2m D1 8 9 BCRdiode D2 9 6 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR421UW6 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 1.5K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=23/07/2015 *VERSION=1 *PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext .SUBCKT BCR421UW6 1 2 3 4 5 6 Q1 5 8 6 BCRNPN R1 1 8 1.5K TC1=0.2m R2 6 4 95 TC1=2m Rshort23 2 3 10u Rshort35 3 5 10u D1 8 9 BCRdiode D2 9 4 BCRdiode .MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350 + VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=3 XTI=10) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=SIMETRIX *DATE=20th May 2020 *VERSION=1.1 ******************************************************************************* * OTP simulatio usage * RthJA pin is degC / W set as voltage . OV = 0 degC/W * Tamb is ambient temperature in degC 0V = 0 degC ******************************************************************************* *PIN ORDER 1:RthJA 2:GND 3:REXT 4:VS 5:Tamb 6:OUT .subckt BCR430UW6 RthJA GND REXT VS Tamb OUT X1 Vfb_sum H2_P R3_N 0 X1_out PARAM_OPAMP params: VOS=0 IB=100n IBOS=1n A0=2Meg GBW=1Meg SR_POS=40k SR_NEG=1Meg CMRR=100k PSRR=100k RIN=1Meg ROUT=50 IQ=500u VDIFF_POS=10m VDIFF_NEG=10m VOFF_TOL=0 V1 S1_N GND 900m R3 VS R3_N 1K H2 H2_P GND H2$TP_CCVS 10 V$H2$TP_CCVS Q2_S GND 0 X$ARB1 OUT Q2_D Q2_D Pout $$arbsourceARB1 pinnames: I1a I1b N1 OUT .subckt $$arbsourceARB1 I1a I1b N1 OUT V1 I1a I1b 0 B1 OUT 0 V=I(V1)*V(N1) .ends X$ARB4 Pout RthJA DT $$arbsourceARB4 pinnames: N1 N2 OUT .subckt $$arbsourceARB4 N1 N2 OUT B1 OUT 0 V=V(N1) * V(N2) .ends X$ARB5 DT Tamb T $$arbsourceARB5 pinnames: N1 N2 OUT .subckt $$arbsourceARB5 N1 N2 OUT B1 OUT 0 V=V(N1) + V(N2) .ends X$ARB6 ARB7_OUT T Vfb_sum $$arbsourceARB6 pinnames: N1 N2 OUT .subckt $$arbsourceARB6 N1 N2 OUT B1 OUT 0 V=IF( V(N2) > 125 , V(N1) - (V(N1) / 25 * (V(N2) -125)) , V(N1)) .ends X$ARB7 S1_P REXT ARB7_OUT $$arbsourceARB7 pinnames: I1a I1b OUT .subckt $$arbsourceARB7 I1a I1b OUT V1 I1a I1b 0 B1 OUT 0 V=IF ( I(V1) > 4u, 610.53 / ( (0.9/I(V1) )^(1/1.005632) ) *10, 0) .ends X$S1 S1_P S1_N VS GND gen_switch : RON=1 ROFF=2Meg VON=6 VOFF=3 X$Q2 Q2_D X1_out Q2_S BCR430_NMOS C1 R3_N GND 1n .subckt gen_switch 1 2 3 4 S1 1 2 3 4 SW .model SW VSWITCH RON={ron} ROFF={roff} VON={von} VOFF={voff} .ends .subckt PARAM_OPAMP VINP VINN VCC VEE VOUT params: + VOS=0 IB=100n IBOS=1n A0=100k GBW=1e6 SR_POS=1e6 SR_NEG=1e6 + CMRR=100k PSRR=100k RIN=1meg + ROUT=100 IQ=0.001 VDIFF_POS=2 VDIFF_NEG=2 VOFF_TOL=0 *#LABELS ,Offset Voltage,Bias Current,Offset Current,Open-loop Gain,Gain-bandwidth,Pos. Slew Rate,Neg. Slew Rate,CMRR,PSRR,Input Resistance,Output Res.,Quiescent Curr.,Headroom Pos.,Headroom Neg.,Offset V. (Statistical)::-0.1|0.1|10u .PARAM voffStat = {VOFF_TOL*(GAUSS(1)-1)} B1ARB1 G4_N G3_P I=ilim*tanh((V(VINN,VINP)-VOS-voffStat)*Gin/ilim) V1ARB2 G3_P G4_N 0 ** Soft limit using LNCOSH .PARAM sharp=10 ** The first term ensures that there is always at least a tiny amount ** of gain. No gain at all often leads to problems ** Modified 29.4.03 - correct error with vee and vcc ref. B1ARB2 C1_P G4_N V=-R*I(V1ARB2)/A0*1e-5 + ((lncosh(sharp*((-R*I(V1ARB2))-(V(VEE,G4_N)+VDIFF_NEG)))+sharp*(V(VEE,G4_N)+VDIFF_NEG) - (lncosh(sharp*((-R*I(V1ARB2))-(V(VCC,G4_N)-VDIFF_POS)))-sharp*(V(VCC,G4_N)-VDIFF_POS)))/sharp/2) **B1ARB2 C1_P G4_N V=-R*I(V1ARB2)/A0*1e-5 + ((lncosh(sharp*((-R*I(V1ARB2))-(V(VEE)+VDIFF_NEG)))+sharp*(V(VEE)+VDIFF_NEG) - (lncosh(sharp*((-R*I(V1ARB2))-(V(VCC)-VDIFF_POS)))-sharp*(V(VCC)-VDIFF_POS)))/sharp/2) **B1ARB2 C1_P G4_N V=Limit(-R*I(V1ARB2),V(VEE)+VDIFF_NEG, V(VCC)-VDIFF_POS) **.ends V2 V2_P V2_N {Vbias} V3 V2_N V3_N {Vbias} ** 29.04.03 Split offset and bias into separate generators I2 VINP G4_N {IB} IBOS2 VINP G4_N {IBOS/2} I1 VINN G4_N {IB} IBOS1 VINN G4_N {-IBOS/2} C2 V2_N G4_N {1/2/PI/RO/5/gbw} C1 C1_P G3_P {C} E2 G4_N VEE VCC VEE 500m G4 G3_P G4_N VCC G4_N {gin*psgain} G2 G3_P G4_N VEE G4_N {gin*psgain} G3 G3_P G4_N VINN G4_N {gin*cmgain/2} G1 G3_P G4_N VINP G4_N {gin*cmgain/2} Q2 VEE V3_N VOUT VCC P1 Q1 VCC V2_P VOUT VEE N1 R3 V2_N C1_P {RO} ** 19.8.04 - somehow got left off RIN VINP VINN {RIN} .PARAM ILIM = {sqrt(SR_POS)*1e-8} .PARAM C = {1e-8/sqrt(SR_POS)} .PARAM Gin = {2*PI*GBW*C} .PARAM R = {A0/Gin} .PARAM IS=1e-15 .PARAM BETA=100 .model N1 npn IS={IS} bf={BETA} .model P1 pnp IS={IS} bf={BETA} .PARAM Vt={BOLTZ*300.15/ECHARGE} .PARAM cmgain={1.0/CMRR} .PARAM psgain={1.0/PSRR} .PARAM VBIAS = {LN(IQ/IS+1)*Vt} .PARAM RO={(BETA+1)*ROUT-VT/IQ/2*BETA} .ends ** Peak- peak voltage source .SUBCKT BCR430_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 ;RD 10 1 0.01938 RD 10 1 1 ;RS 30 3 0.001 RS 30 3 1 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 60 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS .ends BCR430UW6 ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=SIMETRIX *DATE=20th May 2020 *VERSION=1.1 ******************************************************************************* * OTP simulatio usage * RthJA pin is degC / W set as voltage . OV = 0 degC/W * Tamb is ambient temperature in degC 0V = 0 degC ******************************************************************************* *PIN ORDER 1:RthJA 2:GND 3:REXT 4:VS 5:Tamb 6:OUT .subckt BCR430UW6 RthJA GND REXT VS Tamb OUT X1 Vfb_sum H2_P R3_N 0 X1_out PARAM_OPAMP params: VOS=0 IB=100n IBOS=1n A0=2Meg GBW=1Meg SR_POS=40k SR_NEG=1Meg CMRR=100k PSRR=100k RIN=1Meg ROUT=50 IQ=500u VDIFF_POS=10m VDIFF_NEG=10m VOFF_TOL=0 V1 S1_N GND 900m R3 VS R3_N 1K H2 H2_P GND H2$TP_CCVS 10 V$H2$TP_CCVS Q2_S GND 0 X$ARB1 OUT Q2_D Q2_D Pout $$arbsourceARB1 pinnames: I1a I1b N1 OUT .subckt $$arbsourceARB1 I1a I1b N1 OUT V1 I1a I1b 0 B1 OUT 0 V=I(V1)*V(N1) .ends X$ARB4 Pout RthJA DT $$arbsourceARB4 pinnames: N1 N2 OUT .subckt $$arbsourceARB4 N1 N2 OUT B1 OUT 0 V=V(N1) * V(N2) .ends X$ARB5 DT Tamb T $$arbsourceARB5 pinnames: N1 N2 OUT .subckt $$arbsourceARB5 N1 N2 OUT B1 OUT 0 V=V(N1) + V(N2) .ends X$ARB6 ARB7_OUT T Vfb_sum $$arbsourceARB6 pinnames: N1 N2 OUT .subckt $$arbsourceARB6 N1 N2 OUT B1 OUT 0 V=IF( V(N2) > 125 , V(N1) - (V(N1) / 25 * (V(N2) -125)) , V(N1)) .ends X$ARB7 S1_P REXT ARB7_OUT $$arbsourceARB7 pinnames: I1a I1b OUT .subckt $$arbsourceARB7 I1a I1b OUT V1 I1a I1b 0 B1 OUT 0 V=IF ( I(V1) > 4u, 610.53 / ( (0.9/I(V1) )^(1/1.005632) ) *10, 0) .ends X$S1 S1_P S1_N VS GND gen_switch : RON=1 ROFF=2Meg VON=6 VOFF=3 X$Q2 Q2_D X1_out Q2_S BCR430_NMOS C1 R3_N GND 1n .subckt gen_switch 1 2 3 4 S1 1 2 3 4 SW .model SW VSWITCH RON={ron} ROFF={roff} VON={von} VOFF={voff} .ends .subckt PARAM_OPAMP VINP VINN VCC VEE VOUT params: + VOS=0 IB=100n IBOS=1n A0=100k GBW=1e6 SR_POS=1e6 SR_NEG=1e6 + CMRR=100k PSRR=100k RIN=1meg + ROUT=100 IQ=0.001 VDIFF_POS=2 VDIFF_NEG=2 VOFF_TOL=0 *#LABELS ,Offset Voltage,Bias Current,Offset Current,Open-loop Gain,Gain-bandwidth,Pos. Slew Rate,Neg. Slew Rate,CMRR,PSRR,Input Resistance,Output Res.,Quiescent Curr.,Headroom Pos.,Headroom Neg.,Offset V. (Statistical)::-0.1|0.1|10u .PARAM voffStat = {VOFF_TOL*(GAUSS(1)-1)} B1ARB1 G4_N G3_P I=ilim*tanh((V(VINN,VINP)-VOS-voffStat)*Gin/ilim) V1ARB2 G3_P G4_N 0 ** Soft limit using LNCOSH .PARAM sharp=10 ** The first term ensures that there is always at least a tiny amount ** of gain. No gain at all often leads to problems ** Modified 29.4.03 - correct error with vee and vcc ref. B1ARB2 C1_P G4_N V=-R*I(V1ARB2)/A0*1e-5 + ((lncosh(sharp*((-R*I(V1ARB2))-(V(VEE,G4_N)+VDIFF_NEG)))+sharp*(V(VEE,G4_N)+VDIFF_NEG) - (lncosh(sharp*((-R*I(V1ARB2))-(V(VCC,G4_N)-VDIFF_POS)))-sharp*(V(VCC,G4_N)-VDIFF_POS)))/sharp/2) **B1ARB2 C1_P G4_N V=-R*I(V1ARB2)/A0*1e-5 + ((lncosh(sharp*((-R*I(V1ARB2))-(V(VEE)+VDIFF_NEG)))+sharp*(V(VEE)+VDIFF_NEG) - (lncosh(sharp*((-R*I(V1ARB2))-(V(VCC)-VDIFF_POS)))-sharp*(V(VCC)-VDIFF_POS)))/sharp/2) **B1ARB2 C1_P G4_N V=Limit(-R*I(V1ARB2),V(VEE)+VDIFF_NEG, V(VCC)-VDIFF_POS) **.ends V2 V2_P V2_N {Vbias} V3 V2_N V3_N {Vbias} ** 29.04.03 Split offset and bias into separate generators I2 VINP G4_N {IB} IBOS2 VINP G4_N {IBOS/2} I1 VINN G4_N {IB} IBOS1 VINN G4_N {-IBOS/2} C2 V2_N G4_N {1/2/PI/RO/5/gbw} C1 C1_P G3_P {C} E2 G4_N VEE VCC VEE 500m G4 G3_P G4_N VCC G4_N {gin*psgain} G2 G3_P G4_N VEE G4_N {gin*psgain} G3 G3_P G4_N VINN G4_N {gin*cmgain/2} G1 G3_P G4_N VINP G4_N {gin*cmgain/2} Q2 VEE V3_N VOUT VCC P1 Q1 VCC V2_P VOUT VEE N1 R3 V2_N C1_P {RO} ** 19.8.04 - somehow got left off RIN VINP VINN {RIN} .PARAM ILIM = {sqrt(SR_POS)*1e-8} .PARAM C = {1e-8/sqrt(SR_POS)} .PARAM Gin = {2*PI*GBW*C} .PARAM R = {A0/Gin} .PARAM IS=1e-15 .PARAM BETA=100 .model N1 npn IS={IS} bf={BETA} .model P1 pnp IS={IS} bf={BETA} .PARAM Vt={BOLTZ*300.15/ECHARGE} .PARAM cmgain={1.0/CMRR} .PARAM psgain={1.0/PSRR} .PARAM VBIAS = {LN(IQ/IS+1)*Vt} .PARAM RO={(BETA+1)*ROUT-VT/IQ/2*BETA} .ends ** Peak- peak voltage source .SUBCKT BCR430_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 ;RD 10 1 0.01938 RD 10 1 1 ;RS 30 3 0.001 RS 30 3 1 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 60 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS .ends BCR430UW6 ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *ZETEX BCW68H Spice Model v1.0 Last Revised 8/8/05 * .MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20 +ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX BCW68H Spice Model v1.0 Last Revised 8/8/05 * .MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20 +ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * .MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20 +ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=PSPICE *DATE=15Nov2019 *VERSION=1 * .MODEL BCX5116 PNP + IS=2E-13 + NF=1 + BF=300 + IKF=0.8 + VAF=44 + ISE=1E-13 + NE=1.4 + RCO=4.5 + GAMMA=5E-9 + NR=1 + BR=20 + IKR=0.2 + VAR=10 + ISC=2e-13 + NC=1.25 + RB=0.15 + RE=0.15 + RC=0.2 + QUASIMOD=1 + CJC=36E-12 + MJC=0.45 + VJC=0.75 + CJE=110E-12 + TF=0.8E-9 + TR=70e-9 + XTB=1.4 .ends * * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=PSPICE *DATE=14Nov2019 *VERSION=1 * .MODEL BCX5216 PNP + IS=2E-13 + NF=1 + BF=300 + IKF=0.8 + VAF=44 + ISE=1E-13 + NE=1.4 + RCO=4.5 + GAMMA=5E-9 + NR=1 + BR=20 + IKR=0.2 + VAR=10 + ISC=2e-13 + NC=1.25 + RB=0.15 + RE=0.15 + RC=0.2 + QUASIMOD=1 + CJC=36E-12 + MJC=0.45 + VJC=0.75 + CJE=110E-12 + TF=0.8E-9 + TR=70e-9 + XTB=1.4 .ends * * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=PSPICE *DATE=14Nov2019 *VERSION=1 * .MODEL BCX5216 PNP + IS=2E-13 + NF=1 + BF=300 + IKF=0.8 + VAF=44 + ISE=1E-13 + NE=1.4 + RCO=4.5 + GAMMA=5E-9 + NR=1 + BR=20 + IKR=0.2 + VAR=10 + ISC=2e-13 + NC=1.25 + RB=0.15 + RE=0.15 + RC=0.2 + QUASIMOD=1 + CJC=36E-12 + MJC=0.45 + VJC=0.75 + CJE=110E-12 + TF=0.8E-9 + TR=70e-9 + XTB=1.4 .ends * * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=1 * .MODEL BCX5316 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=1 * .MODEL BCX5316 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ *DIODES_INC_SPICE_MODEL BCX5516 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=24-APR-2013 *VERSION=1 .MODEL BCX5516 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX BCX56 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCX56 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BCX5610 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCX5610 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BCX5616 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCX5616 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BCX5616 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCX5616 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BCX6825 Spice Model v1.0 Last Revised 11/11/04 * .MODEL BCX6825 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * *ZETEX BCX6825Q Spice Model v1.0 Last Revised 11/11/04 * .MODEL BCX6825Q NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * *DIODES_BFS17N_SPICE_MODEL *DATE=06Mar2024 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL BFS17N NPN (IS=18.13e-017 NF=1.00 BF=95 VAF=59.7 + IKF=395.2m ISE=3.21f NE=2.00 BR=4.00 NR=1.00 NK=0.65 ISC=15f + VAR=12.0 IKR=405.0m RE=0.13 RB=4.12 RC=0.412 RCO=90.2 FC=0.9 + XTB=1.6 CJE=2.07p VJE=0.90 MJE=0.500 CJC=0.261p VJC=0.300 + MJC=0.300 TF=15.7p TR=7.47n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.073 GAMMA=1.8n QUASIMOD=1) * *$ * ****************************************************************************** * (c) 2024 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *ZETEX BS107P Spice Model v1.1 Last Revised 04/10/2021 * .SUBCKT BS107P 3 4 5 * D G S M1 3 2 5 5 MN0124 RG 4 2 225 RL 3 5 2.4E7 C1 2 5 60E-12 C2 3 2 2E-12 D1 5 3 DN0124 * .MODEL MN0124 NMOS VTO=1.55 RS=1.6 RD=9 IS=1E-15 KP=1.077 CBD=36E-12 PB=1 LAMBDA=0 .MODEL DN0124 D IS=3.071E-12 N=1.026 RS=0.511 .ENDS BS107P * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX BS170P Spice Model v1.1 Last Revised 9/21/20 * .SUBCKT BS170P 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS BS170P * *$ * *ZETEX BS250P Spice Model v1.0 Last Revised 19/3/03 * .SUBCKT BS250P 3 4 5 * D G S M1 3 2 5 5 MBS250 RG 4 2 160 RL 3 5 1.2E8 C1 2 5 47E-12 C2 3 2 10E-12 D1 3 5 DBS250 * .MODEL MBS250 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277 +CBD=105E-12 PB=1 LAMBDA=1.2E-2 .MODEL DBS250 D IS=2E-13 RS=0.309 .ENDS BS250P * *$ * *SRC=BS870;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms Diodes Inc. MOSFET .MODEL DI_BS870 NMOS( LEVEL=1 VTO=2.00 KP=32.0m GAMMA=2.48 + PHI=.75 LAMBDA=86.8u RD=0.490 RS=0.490 + IS=125f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=BS870Q;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms Diodes Inc. MOSFET .MODEL DI_BS870 NMOS( LEVEL=1 VTO=2.00 KP=32.0m GAMMA=2.48 + PHI=.75 LAMBDA=86.8u RD=0.490 RS=0.490 + IS=125f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *---------- BSN20 Spice Model ---------- .SUBCKT BSN20 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSN20 Spice Model v1.0 Last Revised 2012/8/22 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=12/11/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT BSP75G 1 2 3 M1 31 4 33 33 Mmod1 M2 4 4 43 3 Mmod2 M=25 M3 41 37 38 38 Mmod3 M4 16 18 17 3 Mmod2 M=200 M5 15 16 17 3 Mmod2 M=200 M6 14 15 3 3 Mmod2 M=400 R1 2 4 20E3 R2 41 31 0.01 R3 3 33 0.25 R4 1 3 10E6 R5 37 3 20E3 R6 2 13 15E3 R7 2 12 1.7E3 R8 12 10 30E3 R9 12 11 28E3 R10 11 3 2300 R11 13 16 35E3 R12 13 15 35E3 R13 17 3 2.5E3 R14 4 14 300 R15 18 45 50E3 C1 4 33 200E-12 C2 4 1 60E-12 C3 35 33 200E-12 S1 43 3 41 42 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 42 3 2 3 0.22 E2 34 33 4 33 1 E3 18 19 11 10 100 D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 3 13 Dmod5 D6 10 3 Dmod6 D7 37 41 Dmod7 D8 3 1 Dmod8 D9 3 45 Dmod2 * *Distributed Thermal Model for device mounted on minimum copper Rth=208°C/W *To enable thermal feedback for transient analysis change **G1 to G1 V1 1 41 0 **G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) } R21 20 21 0.07 R22 21 22 0.17 R23 22 23 0.37 R24 23 24 1.34 R25 24 25 2.80 R26 25 26 11.19 R27 26 27 48.10 R28 27 28 78.30 R29 28 29 65.99 C21 20 21 7.45E-5 C22 21 22 2.98E-4 C23 22 23 8.94E-4 C24 23 24 2.23E-3 C25 24 25 1.97E-2 C26 25 26 3.58E-2 C27 26 27 5.61E-2 C28 27 28 4.47E-1 C29 28 29 1.36 V2 29 3 25 E4 19 3 22 29 0.201 *Junction temperature at node 20 is 1V/°C *Ambient temperature set V2 at 1V per 1°C * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5 CGDO=5E-7 CGSO=5E-7) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150 + CGDO=5E-7 CGSO=5E-7) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=4) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12) .MODEL Smod1 VSWITCH RON=3.9E3 ROFF=1E6 VON=0.5 VOFF=-1.5 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .ENDS * *$ *ZETEX BSP75N Spice Model v1.0 Last revision 22/02/07 * .SUBCKT BSP75 1 2 3 *------connections-------D-G-S * M1 31 4 33 33 Mmod1 M2 4 4 43 3 Mmod2 M=25 M3 41 37 38 38 Mmod3 M4 16 18 17 3 Mmod2 M=200 M5 15 16 17 3 Mmod2 M=200 M6 14 15 3 3 Mmod2 M=400 R1 2 4 20E3 R2 41 31 0.01 R3 3 33 0.25 R4 1 3 10E6 R5 37 3 20E3 R6 2 13 15E3 R7 2 12 1.7E3 R8 12 10 30E3 R9 12 11 28E3 R10 11 3 2300 R11 13 16 35E3 R12 13 15 35E3 R13 17 3 2.5E3 R14 4 14 300 R15 18 45 50E3 C1 4 33 200E-12 C2 4 1 60E-12 C3 35 33 200E-12 S1 43 3 41 42 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 42 3 2 3 0.22 E2 34 33 4 33 1 E3 18 19 11 10 100 D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 3 13 Dmod5 D6 10 3 Dmod6 D7 37 41 Dmod7 D8 3 1 Dmod8 D9 3 45 Dmod2 * * *Distributed Thermal Model - minimum copper Rth=208 and infin;C/W *To enable thermal feedback change *G1 to G1 V1 1 41 0 *G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) } R21 20 21 0.07 R22 21 22 0.17 R23 22 23 0.37 R24 23 24 1.34 R25 24 25 2.80 R26 25 26 11.19 R27 26 27 48.10 R28 27 28 78.30 R29 28 29 65.99 C21 20 21 7.45E-5 C22 21 22 2.98E-4 C23 22 23 8.94E-4 C24 23 24 2.23E-3 C25 24 25 1.97E-2 C26 25 26 3.58E-2 C27 26 27 5.61E-2 C28 27 28 4.47E-1 C29 28 29 1.36 V2 29 3 25 E4 19 3 22 29 0.201 *Junction temperature node 20 at 1V=1 and infin;C *Ambient temperature set V2 at 1V=1 and infin;C * * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5 CGDO=5E-7 CGSO=5E-7) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150 CGDO=5E-7 CGSO=5E-7) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=4) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12) .MODEL Smod1 VSWITCH RON=700 ROFF=1E6 VON=0.5 VOFF=-1.5 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .ENDS * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=1 * .MODEL BSR33 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=1 * .MODEL BSR33 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ *ZETEX BSR43 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BSR43 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BSR43 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BSR43 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX BSS123 Spice Model v1.0 Last Revision 27/3/06 * .SUBCKT BSS123/ZTX 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS BSS123 * *$ * *---------- BSS123(Z) Spice Model ---------- .SUBCKT BSS123Z 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.298 RS 30 3 0.001 RG 20 2 17 CGS 2 3 5.7E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.75 + TOX = 6E-008 NSUB = 1E+016 KP = 1.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.847E-009 N = 1.638 RS = 0.1103 BV = 115 CJO = 1E-011 VJ = 0.7586 M = 0.6096 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS123Z Spice Model v1.0M Last Revised 2016/10/6 *---------- BSS123K Spice Model ---------- .SUBCKT BSS123K 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 3.552 RS 30 3 0.0001 RG 20 2 37.13 CGS 2 3 3.62E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.561 + TOX = 1E-007 + NSUB = 1E+015 KP = 0.74 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.75E-011 VJ = 0.5 M = 0.5 .MODEL DSUB D IS = 2.1E-008 N = 1.922 RS = 0.1198 BV = 120.5 + CJO = 8E-012 VJ = 0.9 M = 0.5 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS123K Spice Model v1.1 Last Revised 2020/11/04 *BSS123Q Spice Model v1.0 Last Revision 5/2/21 * .SUBCKT BSS123Q/ZTX 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS BSS123Q * *$ * *SRC=BSS123W;DI_BSS123W;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc. MOSFET .MODEL DI_BSS123W NMOS( LEVEL=1 VTO=1.40 KP=0.805 GAMMA=1.74 + PHI=.75 LAMBDA=41.8u RD=0.140 RS=0.140 + IS=85.0f PB=0.800 MJ=0.460 CBD=39.5p + CBS=47.4p CGSO=24.0n CGDO=20.0n CGBO=246n ) * -- Assumes default L=100U W=100U -- *---------- BSS123WQ Spice Model ---------- .SUBCKT BSS123WQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.998 RS 30 3 0.001 RG 20 2 1.23 CGS 2 3 1.9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.562 + TOX = 6E-008 NSUB = 1E+016 KP = 0.298 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 7.832E-008 N = 2.128 RS = 0.06918 BV = 107 CJO = 1E-011 VJ = 0.7586 M = 0.6096 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS123WQ Spice Model v1.0M Last Revised 2016/10/4 *---------- BSS126SK Spice Model ---------- .SUBCKT BSS126SK 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 110 RS 30 3 0.0001 RG 20 2 121 CGS 2 3 3.196E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.46E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = -2.1 + TOX = 1E-007 NSUB = 1E+015 KP = 0.055 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.344E-012 VJ = 0.7679 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.82 RS = 0.4424 BV = 661.8 + CJO = 4.7E-011 VJ = 0.6 M = 0.8 XTI = 0 TT = 8.177E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/07/27 *---------- BSS127S Spice Model ---------- .SUBCKT BSS127S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 84.22 RS 30 3 0.001 RG 20 2 29 CGS 2 3 1.958E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 3.419 + TOX = 6.8E-008 NSUB = 1E+016 KP = 0.127 U0 = 400 KAPPA = 1.044E-015 .MODEL DCGD D CJO = 1.137E-011 VJ = 0.9051 M = 0.89 .MODEL DSUB D IS = 2.294E-010 N = 1.601 RS = 0.1079 + BV = 690 CJO = 1.956E-011 VJ = 1.514 M = 0.8171 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS127S Spice Model v1.1 Last Revised 2014/8/5 *---------- BSS127SSN Spice Model ---------- .SUBCKT BSS127SSN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 84.22 RS 30 3 0.001 RG 20 2 29 CGS 2 3 1.958E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 3.419 + TOX = 6.8E-008 NSUB = 1E+016 KP = 0.127 U0 = 400 KAPPA = 1.044E-015 .MODEL DCGD D CJO = 1.137E-011 VJ = 0.9051 M = 0.89 .MODEL DSUB D IS = 2.294E-010 N = 1.601 RS = 0.1079 BV = 690 + CJO = 1.956E-011 VJ = 1.514 M = 0.8171 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS127SSN Spice Model v1.1 Last Revised 2014/8/5 *ZETEX BSS138 Spice Model v2.0 Last Revised 5/4/07 * .SUBCKT BSS138/ZTX 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 20 RL 3 5 6E6 C1 2 5 30E-12 C2 3 2 1E-12 C3 7 5 58E-12 D1 5 3 Dmod1 D2 6 3 Dmod2 Egs1 2 6 2 5 1 Egs2 8 5 2 5 1 S1 2 7 3 2 SMOD1a S2 7 8 3 2 SMOD1b .MODEL MOD1 NMOS VTO=1 RS=1.58 RD=0.0 IS=1E-15 KP=0.395 +CBD=53.5E-12 PB=1 LAMBDA=267E-6 .MODEL Dmod1 D IS=1.254E-13 N=1.0207 RS=0.222 .MODEL Dmod2 D CJO=40E-12 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1 VOFF=-1 .ENDS * *$ * *---------- BSS138Z Spice Model ---------- .SUBCKT BSS138Z 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS138Z Spice Model v1.0 Last Revised 2012/8/22 *---------- BSS138DW Spice Model ---------- .SUBCKT BSS138DW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS138DW Spice Model v1.0 Last Revised 2012/8/22 *---------- BSS138DWK Spice Model ---------- .SUBCKT BSS138DWK 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.23 RS 30 3 0.0001 RG 20 2 67.26 CGS 2 3 1.83E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.84E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.204 + TOX = 1E-007 NSUB = 1E+016 KP = 0.9 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.3E-011 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.741 RS = 0.1845 BV = 56.47 + CJO = 3.1E-012 VJ = 0.6 M = 0.301 XTI = 0 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/24 *---------- BSS138DWQ Spice Model ---------- .SUBCKT BSS138DWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS138DWQ Spice Model v1.0M Last Revised 2016/4/19 *ZETEX BSS138Q Spice Model v2.0 Last Revised 5/4/07 * .SUBCKT BSS138Q/ZTX 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 20 RL 3 5 6E6 C1 2 5 30E-12 C2 3 2 1E-12 C3 7 5 58E-12 D1 5 3 Dmod1 D2 6 3 Dmod2 Egs1 2 6 2 5 1 Egs2 8 5 2 5 1 S1 2 7 3 2 SMOD1a S2 7 8 3 2 SMOD1b .MODEL MOD1 NMOS VTO=1 RS=1.58 RD=0.0 IS=1E-15 KP=0.395 +CBD=53.5E-12 PB=1 LAMBDA=267E-6 .MODEL Dmod1 D IS=1.254E-13 N=1.0207 RS=0.222 .MODEL Dmod2 D CJO=40E-12 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1 VOFF=-1 .ENDS * *$ *---------- BSS138W Spice Model ---------- .SUBCKT BSS138W 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS138W Spice Model v1.0 Last Revised 2012/8/22 *---------- BSS138WQ Spice Model ---------- .SUBCKT BSS138WQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.33 RS 30 3 0.0001 RG 20 2 37.5 CGS 2 3 4.21E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.32 + TOX = 1E-007 NSUB = 1E+015 KP = 1.3 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.89E-011 VJ = 0.5 M = 0.3977 .MODEL DSUB D IS = 1.73E-009 N = 1.605 RS = 0.1412 BV = 79.85 + CJO = 9.6E-012 VJ = 0.668 M = 0.3 XTI = 0 TT = 8.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/07/19 *ZETEX BSS84 Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT BSS84 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 167 RL 3 5 50E6 C1 2 5 26P C2 3 2 4P D1 3 5 DIODE1 * .MODEL MOD1 PMOS VTO=-1.709 RS=3.091 RD=0.979 IS=1E-15 KP=0.146 +CBD=12P PB=1 .MODEL DIODE1 D IS=1.072E-13 RS=0.527 N=1.077 .ENDS BSS84 * *$ * *SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_BSS84 PMOS( LEVEL=1 VTO=-1.60 KP=4.87m GAMMA=1.98 + PHI=.75 LAMBDA=1.25m RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=46.6p + CBS=55.9p CGSO=50.7n CGDO=42.2n CGBO=69.5n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. - .MODEL 2N7002 NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=39.9u RD=1.05 RS=1.05 + IS=57.5f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *---------- BSS84DW Spice Model ---------- .SUBCKT BSS84DW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.072 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.301E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 .MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 .MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS84DW Spice Model v1.0 Last Revised 2012/4/17 *---------- BSS84DWQ Spice Model ---------- .SUBCKT BSS84DWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.072 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.301E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 .MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 .MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS84DWQ Spice Model v1.0 Last Revised 2012/4/17 *---------- BSS84Q Spice Model ---------- .SUBCKT BSS84Q 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.7 RS 30 3 0.001 RG 20 2 76.64 CGS 2 3 2.2E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.95E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 + VTO = -1.582 TOX = 1E-007 NSUB = 1E+015 KP = 0.43 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.647E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 8.1E-010 N = 1.613 RS = 0.166 BV = 67.27 + CJO = 7.7E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/07 *---------- BSS84V Spice Model ---------- .SUBCKT BSS84V 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.072 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.301E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 .MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 .MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS84V Spice Model v1.0 Last Revised 2012/4/17 *---------- BSS84W Spice Model ---------- .SUBCKT BSS84W 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.072 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.301E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 .MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 .MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS84W Spice Model v1.0 Last Revised 2012/4/17 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JAN2011 *VERSION=1 * .MODEL BST39 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ *ZETEX BST52 Spice Model v1.0 Last Revised 2/8/2004 * .SUBCKT BST52 1 2 3 * C B E Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 .ENDS BST52 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 * *$ * *SRC=BZT52C10;DI_BZT52C10;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.84 .MODEL DF D ( IS=20.6p RS=1.22 N=1.10 + CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) .ENDS *SRC=BZT52C9V1LP;DI_BZT52C9V1LP;Diodes;Zener <=10V; 9.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C9V1LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=11.3p RS=31.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.26f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C10S;DI_BZT52C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C10S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS *SRC=BZT52C10T;DI_BZT52C10T;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.84 .MODEL DF D ( IS=20.6p RS=1.22 N=1.10 + CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) .ENDS *SRC=BZT52C11;DI_BZT52C11;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.83 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=4.60 N=2.97).ENDS *SRC=BZT52C11LP;DI_BZT52C11LP;Diodes;Zener 10V-50V; 11.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C11LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.77 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=4.60 N=2.97 ) .ENDS *SRC=BZT52C11S;DI_BZT52C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C11S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS *SRC=BZT52C11T;DI_BZT52C11T;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.83 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=4.60 N=2.97).ENDS *SRC=BZT52C12;DI_BZT52C12;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=9.46 N=3.00).ENDS *SRC=BZT52C12LP;DI_BZT52C12LP;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C12LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.62 .MODEL DF D ( IS=295.7p RS=351.4m N=1.522 + CJO=24.28p VJ=746.7m M=346.8m TT=50.1n ) .MODEL DR D ( IS=263.7f RS=4.463 N=614.3m) .ENDS *SRC=BZT52C12S;DI_BZT52C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C12S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS *SRC=BZT52C12T;DI_BZT52C12T;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=9.46 N=3.00).ENDS *SRC=BZT52C13;DI_BZT52C13;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=15.8p RS=1.24 N=1.10 + CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) .ENDS *SRC=BZT52C13LP;DI_BZT52C13LP;Diodes;Zener 10V-50V; 13.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C13LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=7.92p RS=30.3 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.58f RS=14.5 N=3.00 ) .ENDS *SRC=BZT52C13LPQ;DI_BZT52C13LPQ;Diodes;Zener 10V-50V; 13.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C13LPQ 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=7.92p RS=30.3 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.58f RS=14.5 N=3.00 ) .ENDS *SRC=BZT52C13S;DI_BZT52C13S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C13S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS *SRC=BZT52C13T;DI_BZT52C13T;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=15.8p RS=1.24 N=1.10 + CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) .ENDS *SRC=BZT52C15;DI_BZT52C15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=14.5 N=3.00).ENDS *SRC=BZT52C15LP;DI_BZT52C15LP;Diodes;Zener 10V-50V; 15.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C15LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=25.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=14.5 N=3.00 ) .ENDS *SRC=BZT52C15LPQ;DI_BZT52C15LPQ;Diodes;Zener 10V-50V; 15.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C15LPQ 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=25.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=14.5 N=3.00 ) .ENDS *SRC=BZT52C15S;DI_BZT52C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS *SRC=BZT52C15T;DI_BZT52C15T;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=14.5 N=3.00).ENDS *SRC=BZT52C16;DI_BZT52C16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=24.5 N=3.00).ENDS *SRC=BZT52C16LP;DI_BZT52C16LP;Diodes;Zener 10V-50V; 16.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C16LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=6.44p RS=29.7 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.29f RS=24.5 N=3.00 ) .ENDS *SRC=BZT52C16LPQ;DI_BZT52C16LPQ;Diodes;Zener 10V-50V; 16.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C16LPQ 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=6.44p RS=29.7 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.29f RS=24.5 N=3.00 ) .ENDS *SRC=BZT52C16S;DI_BZT52C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=25.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS *SRC=BZT52C16T;DI_BZT52C16T;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=24.5 N=3.00).ENDS *SRC=BZT52C18;DI_BZT52C18;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=29.5 N=3.00).ENDS *SRC=BZT52C18LP;DI_BZT52C18LP;Diodes;Zener 10V-50V; 18.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C18LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=29.5 N=3.00 ) .ENDS ********************************************************************************************************************************** *SRC=BZT52C18S;DI_BZT52C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C18S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=25.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) .ENDS ********************************************************************************************************************************* *SRC=BZT52C18T;DI_BZT52C18T;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=29.5 N=3.00).ENDS *SRC=BZT52C20;DI_BZT52C20;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=39.5 N=3.00).ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/04/2014 *VERSION=1 .model BZT52C20LP D(IS=.0002n RS=0.01 CJO=1000p M=0.5 VJ=0.4 N=1.2 IKF=30m ISR=.0002u BV=20 IBV=10u TT=40n EG=1.2 TRS1=.01m) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=BZT52C20S;DI_BZT52C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C20S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZT52C20T;DI_BZT52C20T;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=39.5 N=3.00).ENDS *SRC=BZT52C22;DI_BZT52C22;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=39.5 N=3.00).ENDS *SRC=BZT52C22LP;DI_BZT52C22LP;Diodes;Zener 10V-50V; 22.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C22LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=4.68p RS=28.8 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.36e-016 RS=39.5 N=3.00 ) .ENDS *SRC=BZT52C22S;DI_BZT52C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C22S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZT52C22T;DI_BZT52C22T;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=39.5 N=3.00).ENDS *SRC=BZT52C24;DI_BZT52C24;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=54.5 N=3.00).ENDS *SRC=BZT52C24LP;DI_BZT52C24LP;Diodes;Zener 10V-50V; 24.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C24LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=4.29p RS=28.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.58e-016 RS=54.5 N=3.00 ) .ENDS *SRC=BZT52C24S;DI_BZT52C24S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C24S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS *SRC=BZT52C24T;DI_BZT52C24T;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=54.5 N=3.00).ENDS *SRC=BZT52C27;DI_BZT52C27;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=41.1 N=3.00).ENDS *SRC=BZT52C27S;DI_BZT52C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C27S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=16/04/2014 *VERSION=1 *Comments:zener break down is modelled only at 25°c .SUBCKT BZT52C2V0 1 2 D1 1 2 DF D2 2 1 DR .model DF D(IS=.00015n RS=0.055 CJO=500p M=0.5 VJ=0.4 N=1.1 IKF=200m TT=40n EG=1.05 TRS1=.01m) .model DR D(IS=.6n RS=15 N=3 IKF=.72u T_ABS=25) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=BZT52C2V0S;DI_BZT52C2V0S;Diodes;Zener <=10V; 2.00V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10 + CJO=503p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=84.5 N=3.00 ).ENDS *SRC=BZT52C2V0T;DI_BZT52C2V0T;Diodes;Zener <=10V; 2.00V 0.15W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=103p RS=37.6 N=1.10 + CJO=516p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=20.6f RS=84.5 N=3.00).ENDS *SRC=BZT52C2V4;DI_BZT52C2V4;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V4 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V4LP;BZT52C2V4LP;Diodes;Zener <=10V; 2.40V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C2V4LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.2 .MODEL DF D ( IS=42.9p RS=35.1 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=150n RS=6.5 N=8.0 ) .ENDS *SRC=BZT52C2V4S;DI_BZT52C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V4S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=460p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS *SRC=BZT52C2V4T;DI_BZT52C2V4T;Diodes;Zener <=10V; 2.40V 0.15W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V4T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V7;DI_BZT52C2V7;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.217 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V7LP;BZT52C2V7LP;Diodes;Zener <=10V; 2.70V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C2V7LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.164 .MODEL DF D ( IS=38.1p RS=34.8 N=1.10 + CJO=152p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.63f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V7S;DI_BZT52C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=410p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS *SRC=BZT52C2V7T;DI_BZT52C2V7T;Diodes;Zener <=10V; 2.70V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C2V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.217 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C30;DI_BZT52C30;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=41.1 N=3.00).ENDS *SRC=BZT52C30S;DI_BZT52C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C30S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZT52C33;DI_BZT52C33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=41.1 N=3.00).ENDS *SRC=BZT52C33S;DI_BZT52C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZT52C36;DI_BZT52C36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=5.72p RS=1.27 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=51.1 N=3.00 ) .ENDS *SRC=BZT52C36LP;BZT52C36LP;Diodes;Zener 10V-50V; 36.0V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C36LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=2.86p RS=27.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.72e-016 RS=51.1 N=3.00 ) .ENDS *SRC=BZT52C36S;DI_BZT52C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=17.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZT52C39;DI_BZT52C39;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C39  1 2 *        Terminals    A   K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=91.1 N=3.00 )                                               .ENDS *SRC=BZT52C39LP;BZT52C39LP;Diodes;Zener 10V-50V; 39.0V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C39LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=2.64p RS=27.2 N=1.10 + CJO=24.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.28e-016 RS=91.1 N=3.00 ) .ENDS *SRC=BZT52C39S;DI_BZT52C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C39S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZT52C3V0;DI_BZT52C3V0;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.534 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=79.5 N=3.00 ) .ENDS *SRC=BZT52C3V0LP;BZT52C3V0LP;Diodes;Zener <=10V; 3.00V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V0LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.282 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=50.7n RS=6.1 N=9.0 ) .ENDS *SRC=BZT52C3V0S;DI_BZT52C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C3V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS *SRC=BZT52C3V0T;DI_BZT52C3V0T;Diodes;Zener <=10V; 3.00V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.534 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=79.5 N=3.00 ) .ENDS *SRC=BZT52C3V3;DI_BZT52C3V3;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.827 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=79.5 N=3.00).ENDS *SRC=BZT52C3V3LP;BZT52C3V3LP;Diodes;Zener <=10V; 3.30V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V3LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.773 .MODEL DF D ( IS=31.2p RS=34.2 N=1.10 + CJO=136p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.24f RS=79.5 N=3.00 ) .ENDS *SRC=BZT52C3V3S;DI_BZT52C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS *SRC=BZT52C3V3T;DI_BZT52C3V3T;Diodes;Zener <=10V; 3.30V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.827 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=79.5 N=3.00).ENDS *SRC=BZT52C3V6;DI_BZT52C3V6;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.15 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=74.5 N=3.00).ENDS *SRC=BZT52C3V6LP;BZT52C3V6LP;Diodes;Zener <=10V; 3.60V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V6LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.09 .MODEL DF D ( IS=28.6p RS=34.0 N=1.10 + CJO=130p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.72f RS=74.5 N=3.00 ) .ENDS *SRC=BZT52C3V6S;DI_BZT52C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS *SRC=BZT52C3V6T;DI_BZT52C3V6T;Diodes;Zener <=10V; 3.60V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.15 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=74.5 N=3.00).ENDS *SRC=BZT52C3V9;DI_BZT52C3V9;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.44 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=74.5 N=3.00).ENDS *SRC=BZT52C3V9LP;BZT52C3V9LP;Diodes;Zener <=10V; 3.90V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V9LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.39 .MODEL DF D ( IS=26.4p RS=33.7 N=1.10 + CJO=122p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.28f RS=74.5 N=3.00 ) .END ******************************************************************************************************************************** *SRC=BZT52C3V9S;DI_BZT52C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V9S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ) .ENDS ******************************************************************************************************************************** *SRC=BZT52C3V9T;DI_BZT52C3V9T;Diodes;Zener <=10V; 3.90V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V9T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.44 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=74.5 N=3.00).ENDS *SRC=BZT52C43;DI_BZT52C43;Diodes;Zener 10V-50V; 43.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=3.93p RS=1.51 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.86e-016 RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C47;DI_BZT52C47;Diodes;Zener 10V-50V; 47.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=3.59p RS=1.48 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.19e-016 RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C4V3;DI_BZT52C4V3;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.83 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=74.5 N=3.00).ENDS *SRC=BZT52C4V3LP;BZT52C4V3LP;Diodes;Zener <=10V; 4.30V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C4V3LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.78 .MODEL DF D ( IS=24.0p RS=33.4 N=1.10 + CJO=111p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.79f RS=74.5 N=3.00 ) .ENDS *SRC=BZT52C4V3S;DI_BZT52C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C4V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS *SRC=BZT52C4V3T;DI_BZT52C4V3T;Diodes;Zener <=10V; 4.30V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.83 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=74.5 N=3.00).ENDS *SRC=BZT52C4V7;DI_BZT52C4V7;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.27 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=64.5 N=3.00).ENDS *SRC=PD3Z284C4V7;PD3Z284C4V7;Diodes;Zener <=10V; 4.70V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT PD3Z284C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.22 .MODEL DF D ( IS=21.9p RS=9.72 N=1.10 + CJO=103p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.38f RS=64.5 N=3.00 ) .ENDS *SRC=BZT52C4V7S;DI_BZT52C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C4V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS *SRC=BZT52C4V7T;DI_BZT52C4V7T;Diodes;Zener <=10V; 4.70V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.27 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=64.5 N=3.00).ENDS *SRC=BZT52C51;DI_BZT52C51;Diodes;Zener >50V; 51.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.3 .MODEL DF D ( IS=3.31p RS=1.45 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.62e-016 RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C51S;DI_BZT52C51S;Diodes;Zener >50V; 51.0V 0.200W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C51S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.2 .MODEL DF D ( IS=1.62p RS=25.8 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23e-016 RS=84.5 N=3.00 ).ENDS *SRC=BZT52C5V1;DI_BZT52C5V1;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.77 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=44.5 N=3.00).ENDS *SRC=BZT52C5V1LP;DI_BZT52C5V1LP;Diodes;Zener <=10V; 5.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C5V1LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.71 .MODEL DF D ( IS=20.2p RS=33.0 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.04f RS=44.5 N=3.00 ) .ENDS *SRC=BZT52C5V1S;DI_BZT52C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C5V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS *SRC=BZT52C5V1T;DI_BZT52C5V1T;Diodes;Zener <=10V; 5.10V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.77 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=44.5 N=3.00).ENDS *SRC=BZT52C5V6;DI_BZT52C5V6;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.36 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=24.5 N=3.00).ENDS *SRC=BZT52C5V6LP;DI_BZT52C5V6LP;Diodes;Zener <=10V; 5.60V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C5V6LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.31 .MODEL DF D ( IS=18.4p RS=32.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.68f RS=24.5 N=3.00 ) .ENDS *SRC=BZT52C5V6S;DI_BZT52C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C5V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=BZT52C5V6T;DI_BZT52C5V6T;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.36 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=24.5 N=3.00).ENDS *SRC=BZT52C6V2;DI_BZT52C6V2;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=2.30 N=1.49).ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/04/2014 *VERSION=1 .model BZT52C6V2LP D(IS=.0002n RS=0.01 CJO=1000p M=0.5 VJ=0.4 N=1.2 IKF=30m ISR=.0002u BV=6 IBV=10u TT=40n EG=1.2 TRS1=.01m) .ENDS * (c) 2016 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=BZT52C6V2S;DI_BZT52C6V2S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C6V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS *SRC=BZT52C6V2T;DI_BZT52C6V2T;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=2.30 N=1.49).ENDS *SRC=BZT52C6V8;DI_BZT52C6V8;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23).ENDS *SRC=BZT52C6V8LP;DI_BZT52C6V8LP;Diodes;Zener <=10V; 6.80V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C6V8LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.16 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=66.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.03f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C6V8S;DI_BZT52C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C6V8S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=BZT52C6V8T;DI_BZT52C6V8T;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23).ENDS *SRC=BZT52C7V5;DI_BZT52C7V5;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.89 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=2.23).ENDS *SRC=BZT52C7V5LP;DI_BZT52C7V5LP;Diodes;Zener <=10V; 7.50V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C7V5LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.85 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=55.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C7V5S;DI_BZT52C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C7V5S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS *SRC=BZT52C7V5T;DI_BZT52C7V5T;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.89 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=2.23).ENDS *SRC=BZT52C8V2;DI_BZT52C8V2;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.59 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=38.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C8V2LP;DI_BZT52C8V2LP;Diodes;Zener <=10V; 8.20V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C8V2LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.55 .MODEL DF D ( IS=12.6p RS=31.6 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.51f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C8V2S;DI_BZT52C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C8V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS *SRC=BZT52C8V2T;DI_BZT52C8V2T;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.59 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=38.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C9V1;DI_BZT52C9V1;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.48 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=35.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C9V1LP;DI_BZT52C9V1LP;Diodes;Zener <=10V; 9.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C9V1LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=11.3p RS=31.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.26f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C9V1LPQ;DI_BZT52C9V1LPQ;Diodes;Zener <=10V; 9.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C9V1LPQ 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=11.3p RS=31.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.26f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C9V1S;DI_BZT52C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C9V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS *SRC=BZT52C9V1T;DI_BZT52C9V1T;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.48 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=35.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=3.45 N=2.23 ) .ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=14/07/2017 *VERSION=1 .SUBCKT BZT585B2V4T 1 2 D1 1 2 DF D2 2 1 DR D3 1 2 DR2 .model DF D(IS=.000015n RS=0.32 CJO=200p M=0.5 VJ=0.4 N=1.1 IKF=120m TT=40n EG=1.13 TRS1=.2m) .model DR D(IS=.6n RS=58 N=3.3 IKF=.7u T_ABS=25) .model DR2 D(BV=2.378 IBV=100p RS=6 NBV=1.2 IBVL=10p TBV1=-1.72m N=100) .ENDS * (c) 2017 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *SIMULATOR=PSPICE *DATE=13/04/2018 .SUBCKT BZT585B3V9T 1 2 D1 1 2 DF D2 2 1 DR D3 1 2 DR2 .model DF D(IS=.000015n RS=0.32 CJO=200p M=0.5 VJ=0.4 N=1.1 IKF=120m TT=40n EG=1.13 TRS1=.2m) .model DR D(IS=5.26p RS=75 N=4.7 IKF=1.2u T_ABS=25) .model DR2 D(BV=3.9 IBV=100n RS=6.5 NBV=1.2 IBVL=1u TBV1=-1.72m N=100) .ENDS * *DIODES_INC_SPICE_MODEL *SIMULATOR=PSPICE *DATE=13/04/2018 .SUBCKT BZT585B3V9T 1 2 D1 1 2 DF D2 2 1 DR D3 1 2 DR2 .model DF D(IS=.000015n RS=0.32 CJO=200p M=0.5 VJ=0.4 N=1.1 IKF=120m TT=40n EG=1.13 TRS1=.2m) .model DR D(IS=5.26p RS=75 N=4.7 IKF=1.2u T_ABS=25) .model DR2 D(BV=3.9 IBV=100n RS=6.5 NBV=1.2 IBVL=1u TBV1=-1.72m N=100) .ENDS * *DIODES_INC_SPICE_MODEL *SIMULATOR=PSPICE *DATE=13/04/2018 .SUBCKT BZT585B5V1T 1 2 D1 1 2 DF D2 2 1 DR D3 1 2 DR2 .model DF D(IS=.000015n RS=0.32 CJO=200p M=0.5 VJ=0.4 N=1.1 IKF=120m TT=40n EG=1.13 TRS1=.2m) .model DR D(IS=0.46p RS=1.75 N=7.3 IKF=4u T_ABS=25) .model DR2 D(BV=5.1 IBV=100n RS=2.05 NBV=1.2 IBVL=50m TBV1=-1.72m N=100) .ENDS * *DIODES_INC_SPICE_MODEL *SIMULATOR=PSPICE *DATE=13/04/2018 .SUBCKT BZT585B5V1T 1 2 D1 1 2 DF D2 2 1 DR D3 1 2 DR2 .model DF D(IS=.000015n RS=0.32 CJO=200p M=0.5 VJ=0.4 N=1.1 IKF=120m TT=40n EG=1.13 TRS1=.2m) .model DR D(IS=0.46p RS=1.75 N=7.3 IKF=4u T_ABS=25) .model DR2 D(BV=5.1 IBV=100n RS=2.05 NBV=1.2 IBVL=50m TBV1=-1.72m N=100) .ENDS * *DIODES_INC_SPICE_MODEL *SIMULATOR=PSPICE *DATE=07/05/2018 .SUBCKT BZT585B7V5T 1 2 D1 1 2 DF D2 2 1 DR D3 1 2 DR2 .model DF D(IS=.000015n RS=0.32 CJO=200p M=0.5 VJ=0.4 N=1.1 IKF=120m TT=40n EG=1.13 TRS1=.2m) .model DR D(IS=0.16p RS=0.1 N=18 IKF=4u T_ABS=25) .model DR2 D(BV=7.5 IBV=100n RS=1.05 NBV=1.2 IBVL=7m TBV1=-1.72m N=100) .ENDS *SRC=BZX84C10;DI_BZX84C10;Diodes;Zener <=10V; 10.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.81 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=4.60 N=2.97 ) .ENDS *SRC=BZX84C10S;DI_BZX84C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C10S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C10T;DI_BZX84C10T;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C10T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.74 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C10TS;DI_BZX84C10TS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C10TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C10W;DI_BZX84C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C10W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C11;DI_BZX84C11;Diodes;Zener 10V-50V; 11.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=4.60 N=2.97 ) .ENDS *SRC=BZX84C11S;DI_BZX84C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C11S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C11T;DI_BZX84C11T;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C11T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.74 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C11TS;DI_BZX84C11TS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C11TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C11W;DI_BZX84C11W;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C11W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS *SRC=BZX84C12;DI_BZX84C12;Diodes;Zener 10V-50V; 12.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=9.46 N=3.00 ) .ENDS *SRC=BZX84C12S;DI_BZX84C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C12S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS *SRC=BZX84C12T;DI_BZX84C12T;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C12T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.68 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=9.46 N=3.00 ).ENDS *SRC=BZX84C12TS;DI_BZX84C12TS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C12TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS *SRC=BZX84C12W;DI_BZX84C12W;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C12W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS *SRC=BZX84C13;DI_BZX84C13;Diodes;Zener 10V-50V; 13.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=14.5 N=3.00 ) .ENDS *SRC=BZX84C13S;DI_BZX84C13S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C13S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C13T;DI_BZX84C13T;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C13T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.51e-016 RS=14.5 N=3.00 ).ENDS *SRC=BZX84C13TS;DI_BZX84C13TS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C13TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C13W;DI_BZX84C13W;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C13W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C15;DI_BZX84C15;Diodes;Zener 10V-50V; 15.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=14.5 N=3.00 ) .ENDS *SRC=BZX84C15S;DI_BZX84C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C15T;DI_BZX84C15T;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C15T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=14.5 N=3.00 ).ENDS *SRC=BZX84C15TS;DI_BZX84C15TS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C15TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C15W;DI_BZX84C15W;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C15W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS *SRC=BZX84C16;DI_BZX84C16;Diodes;Zener 10V-50V; 16.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=24.5 N=3.00 ) .ENDS *SRC=BZX84C16S;DI_BZX84C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C16T;DI_BZX84C16T;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C16T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.73e-016 RS=24.5 N=3.00 ).ENDS *SRC=BZX84C16TS;DI_BZX84C16TS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C16TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C16W;DI_BZX84C16W;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C16W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C18;DI_BZX84C18;Diodes;Zener 10V-50V; 18.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=29.5 N=3.00 ) .ENDS *SRC=BZX84C18S;DI_BZX84C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C18S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ).ENDS *SRC=BZX84C18T;DI_BZX84C18T;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C18T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=29.5 N=3.00 ).ENDS *SRC=BZX84C18TS;DI_BZX84C18TS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C18TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ).ENDS *SRC=BZX84C18W;DI_BZX84C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C18W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ).ENDS *SRC=BZX84C20;DI_BZX84C20;Diodes;Zener 10V-50V; 20.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=39.5 N=3.00 ) .ENDS *SRC=BZX84C20S;DI_BZX84C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C20S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C20T;DI_BZX84C20T;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C20T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.18e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C20TS;DI_BZX84C20TS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C20TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C20W;DI_BZX84C20W;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C20W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C22;DI_BZX84C22;Diodes;Zener 10V-50V; 22.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=39.5 N=3.00 ) .ENDS *SRC=BZX84C22S;DI_BZX84C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C22S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C22T;DI_BZX84C22T;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C22T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.62e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C22TS;DI_BZX84C22TS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C22TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C22W;DI_BZX84C22W;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C22W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS *SRC=BZX84C24;DI_BZX84C24;Diodes;Zener 10V-50V; 24.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=54.5 N=3.00 ) .ENDS *SRC=BZX84C24S;DI_BZX84C24S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C24S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS *SRC=BZX84C24T;DI_BZX84C24T;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C24T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15e-016 RS=54.5 N=3.00 ).ENDS *SRC=BZX84C24TS;DI_BZX84C24TS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C24TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS *SRC=BZX84C24W;DI_BZX84C24W;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C24W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS *SRC=BZX84C27;DI_BZX84C27;Diodes;Zener 10V-50V; 27.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C27S;DI_BZX84C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C27S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C27T;DI_BZX84C27T;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C27T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C27TS;DI_BZX84C27TS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C27TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C27W;DI_BZX84C27W;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C27W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C2V4;DI_BZX84C2V4;Diodes;Zener <=10V; 2.40V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C2V4 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=60.1p RS=36.1 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.0f RS=84.5 N=3.00 ) .ENDS *SRC=BZX84C2V4S;DI_BZX84C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V4S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V4T;DI_BZX84C2V4T;Diodes;Zener <=10V; 2.40V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V4T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V4TS;DI_BZX84C2V4TS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V4TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V4W;DI_BZX84C2V4W;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V4W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V7;DI_BZX84C2V7;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.190 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=84.5 N=3.00 ) .ENDS *SRC=BZX84C2V7S;DI_BZX84C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V7T;DI_BZX84C2V7T;Diodes;Zener <=10V; 2.70V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.124 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V7TS;DI_BZX84C2V7TS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V7TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C2V7W;DI_BZX84C2V7W;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V7W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS *SRC=BZX84C30;DI_BZX84C30;Diodes;Zener 10V-50V; 30.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C30S;DI_BZX84C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C30S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C30T;DI_BZX84C30T;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C30T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C30TS;DI_BZX84C30TS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C30TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C30W;DI_BZX84C30W;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C30W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C33;DI_BZX84C33;Diodes;Zener 10V-50V; 33.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C33S;DI_BZX84C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C33T;DI_BZX84C33T;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C33T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C33TS;DI_BZX84C33TS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C33TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C33W;DI_BZX84C33W;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C33W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS *SRC=BZX84C36;DI_BZX84C36;Diodes;Zener 10V-50V; 36.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C36S;DI_BZX84C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ).ENDS *SRC=BZX84C36T;DI_BZX84C36T;Diodes;Zener >50V; 536V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C36T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 533 .MODEL DF D ( IS=115f RS=18.2 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.31e-017 RS=51.1 N=3.00 ).ENDS *SRC=BZX84C36TS;DI_BZX84C36TS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C36TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ).ENDS *SRC=BZX84C36W;DI_BZX84C36W;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C36W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ).ENDS *SRC=BZX84C39;DI_BZX84C39;Diodes;Zener 10V-50V; 39.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 ) .ENDS *SRC=BZX84C39S;DI_BZX84C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C39S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZX84C39T;DI_BZX84C39T;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C39T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZX84C39TS;DI_BZX84C39TS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C39TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZX84C39W;DI_BZX84C39W;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C39W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS *SRC=BZX84C3V0;DI_BZX84C3V0;Diodes;Zener <=10V; 3.00V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.507 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61f RS=79.5 N=3.00 ) .ENDS *SRC=BZX84C3V0S;DI_BZX84C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V0T;DI_BZX84C3V0T;Diodes;Zener <=10V; 3.00V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.441 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V0TS;DI_BZX84C3V0TS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V0TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V0W;DI_BZX84C3V0W;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V0W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V3;DI_BZX84C3V3;Diodes;Zener <=10V; 3.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.799 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74f RS=79.5 N=3.00 ) .ENDS *SRC=BZX84C3V3S;DI_BZX84C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V3T;DI_BZX84C3V3T;Diodes;Zener <=10V; 3.30V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.733 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V3TS;DI_BZX84C3V3TS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V3TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V3W;DI_BZX84C3V3W;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V3W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS *SRC=BZX84C3V6;DI_BZX84C3V6;Diodes;Zener <=10V; 3.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.12 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01f RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C3V6S;DI_BZX84C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V6T;DI_BZX84C3V6T;Diodes;Zener <=10V; 3.60V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.05 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V6TS;DI_BZX84C3V6TS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V6TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V6W;DI_BZX84C3V6W;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V9;DI_BZX84C3V9;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.41 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C3V9S;DI_BZX84C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V9S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V9T;DI_BZX84C3V9T;Diodes;Zener <=10V; 3.90V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V9T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.35 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V9TS;DI_BZX84C3V9TS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V9TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C3V9W;DI_BZX84C3V9W;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V9W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C43;DI_BZX84C43;Diodes;Zener 10V-50V; 43.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.0 .MODEL DF D ( IS=3.35p RS=27.8 N=1.10 + CJO=22.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 ) .ENDS *SRC=BZX84C47;DI_BZX84C47;Diodes;Zener 10V-50V; 47.0V 0.350W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZX84C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 43.9 .MODEL DF D ( IS=3.07p RS=27.6 N=1.10 + CJO=22.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 ) .ENDS *SRC=BZX84C4V3;DI_BZX84C4V3;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.80 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C4V3S;DI_BZX84C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C4V3T;DI_BZX84C4V3T;Diodes;Zener <=10V; 4.30V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.74 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.87f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C4V3TS;DI_BZX84C4V3TS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V3TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C4V3W;DI_BZX84C4V3W;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V3W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS *SRC=BZX84C4V7;DI_BZX84C4V7;Diodes;Zener <=10V; 4.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.25 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C4V7S;DI_BZX84C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS *SRC=BZX84C4V7T;DI_BZX84C4V7T;Diodes;Zener <=10V; 4.70V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.18 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.63f RS=64.5 N=3.00 ).ENDS *SRC=BZX84C4V7TS;DI_BZX84C4V7TS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V7TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS *SRC=BZX84C4V7W;DI_BZX84C4V7W;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V7W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS *SRC=bzx84c51;DI_BZX84C51;Diodes;Zener >50V; 51.0V 0.350W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_BZX84C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.5 .MODEL DF D ( IS=2.83p RS=1.77 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 ) .ENDS *SRC=BZX84C5V1;DI_BZX84C5V1;Diodes;Zener <=10V; 5.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.74 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=44.5 N=3.00 ) .ENDS *SRC=BZX84C5V1S;DI_BZX84C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS *SRC=BZX84C5V1T;DI_BZX84C5V1T;Diodes;Zener <=10V; 5.10V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.67 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=44.5 N=3.00 ).ENDS *SRC=BZX84C5V1TS;DI_BZX84C5V1TS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V1TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS *SRC=BZX84C5V1W;DI_BZX84C5V1W;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V1W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS *SRC=BZX84C5V6;DI_BZX84C5V6;Diodes;Zener <=10V; 5.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.33 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=24.5 N=3.00 ) .ENDS *SRC=BZX84C5V6S;DI_BZX84C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C5V6T;DI_BZX84C5V6T;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.27 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.21f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C5V6TS;DI_BZX84C5V6TS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V6TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C5V6W;DI_BZX84C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS *SRC=BZX84C6V2;DI_BZX84C6V2;Diodes;Zener <=10V; 6.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=2.30 N=1.49 ) .ENDS *SRC=BZX84C6V2S;DI_BZX84C6V2S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS *SRC=BZX84C6V2T;DI_BZX84C6V2T;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V2T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.09 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.99f RS=2.30 N=1.49 ).ENDS *SRC=BZX84C6V2TS;DI_BZX84C6V2TS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V2TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS *SRC=BZX84C6V2W;DI_BZX84C6V2W;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V2W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS *SRC=BZX84C6V8;DI_BZX84C6V8;Diodes;Zener <=10V; 6.80V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C6V8S;DI_BZX84C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V8S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C6V8T;DI_BZX84C6V8T;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V8T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.13 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C6V8TS;DI_BZX84C6V8TS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V8TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C6V8W;DI_BZX84C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V8W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C7V5;DI_C;Diodes;Zener <=10V; 7.50V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C7V5S;DI_BZX84C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C7V5S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C7V5T;DI_BZX84C7V5T;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C7V5T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.82 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C7V5TS;DI_BZX84C7V5TS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C7V5TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C7V5W;DI_BZX84C7V5W;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C7V5W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C8V2;DI_BZX84C8V2;Diodes;Zener <=10V; 8.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.57 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C8V2S;DI_BZX84C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C8V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C8V2T;DI_BZX84C8V2T;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C8V2T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.52 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.51f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C8V2TS;DI_BZX84C8V2TS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C8V2TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C8V2W;DI_BZX84C8V2W;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C8V2W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C9V1;DI_BZX84C9V1;Diodes;Zener <=10V; 9.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.46 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C9V1S;DI_BZX84C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C9V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C9V1T;DI_BZX84C9V1T;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C9V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.36f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C9V1TS;DI_BZX84C9V1TS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C9V1TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS *SRC=BZX84C9V1W;DI_BZX84C9V1W;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C9V1W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS ******************************************************************************************************************************* *SRC=CTA2N1P;DI_CTA2N1P_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_CTA2N1P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ----------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC= D3Z5V1BF; D3Z5V1BF;Diodes;Zener <=10V; 5.09V 0.500W DIODES Zener *SYM=HZEN .SUBCKT D3Z5V1BF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.66 .MODEL DF D ( IS=40.5p RS=1.92 N=1.10 + CJO=30.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.09f RS=64.5 N=3.00 ) .ENDS * SPICE 3 Model for D58V0M4U8MR_model 4 Channel SO-8 ***************************************************************************** * (C) Copyright 2017 Diodes Incorporated. All rights reserved. ***************************************************************************** ** This model is designed as an aid not an accurate physical model ** DIODES make no warranties with this model ** The model is provided solely on an "as is" basis. ** The entire risk as to its quality and performance is with the customer. ***************************************************************************** * * This model is subject to change without notice. * Diodes is not responsible that this model is actual or to give notice about changes ***************************************************************************** * * Updates: * * Version 1.0 * ***************************************************************************** * Package : SO-8 *â€Provides ESD Protection per IEC 61000-4-2 Standard: Air â€Â±30kV, Contact â€Â±30kV *â€1 Channel of ESD Protection *â€Low Channel Input Capacitance *â€Typically Used in Powever Over Ethernet PSE Equipment against Line Overvoltges ***************************************************************************** .SUBCKT D58V0M4U8MR_model 1 2 3 4 5 6 7 8 * Pinout: *Pin 1 = PS1 *Pin 2 = GND *Pin 3 = GND *Pin 4 = PS2 *Pin 5 = PS3 *Pin 6 = GND *Pin 7 = GND *Pin 8 = PS4 D1 1 2 ZDiode D2 4 2 ZDiode D3 5 2 ZDiode D4 8 2 ZDiode R1 2 3 .01m R2 2 6 .01m R3 2 7 .01m .MODEL ZDiode d +IS=1e-13 RS=0.169 N=0.957115 EG=1.3 +XTI=4 BV=68.22 IBV=0.00025 CJO=368.2e-12 +VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09 * SPICE 3 Model for D5V0L1B2WS 1 Channel SOD323 ***************************************************************************** * (C) Copyright 2016 Diodes Incorporated. All rights reserved. ***************************************************************************** ** This model is designed as an aid not an accurate physical model ** DIODES make no warranties with this model ** The model is provided solely on an "as is" basis. ** The entire risk as to its quality and performance is with the customer. ***************************************************************************** * * This model is subject to change without notice. * Diodes is not responsible that this model is actual or to give notice about changes ***************************************************************************** * * Updates: * * Version 1.0 * ***************************************************************************** *â€Provides ESD Protection per IEC 61000-4-2 Standard: Air â€Â±30kV, Contact â€Â±30kV *â€1 Channel of ESD Protection *â€Low Channel Input Capacitance *â€Typically Used in Cellular Handsets, Portable Electronics, *Communication Systems, Computers and Peripherals ***************************************************************************** .SUBCKT D5V0L1B2WS 1 2 * Pin 1 = Electrode 1 * Pin 2 = Electrode 2 * Terminals A K D1 1 3 ZDiode D2 2 3 ZDiode .ENDS D5V0L1B2WS * .MODEL ZDiode d +IS=1e-13 RS=0.25 N=0.957115 EG=1.3 +XTI=4 BV=6.48 IBV=0.00025 CJO=32e-12 +VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09 +KF=0 AF=1 ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EK;DI_DCX114EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EK;DI_DCX114EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EU;DI_DCX114EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EU;DI_DCX114EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TH;DI_DCX114TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TH;DI_DCX114TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TK;DI_DCX114TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TK;DI_DCX114TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TU;DI_DCX114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TU;DI_DCX114TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YH;DI_DCX114YH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YH;DI_DCX114YH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YK;DI_DCX114YK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YK;DI_DCX114YK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YU;DI_DCX114YU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YU;DI_DCX114YU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122LH;DI_DCX122LH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122LH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122LH;DI_DCX122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122TH;DI_DCX122TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122TH;DI_DCX122TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JH;DI_DCX123JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JH;DI_DCX123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JK;DI_DCX123JK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JK;DI_DCX123JK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EH;DI_DCX124EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EH;DI_DCX124EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EK;DI_DCX124EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EK;DI_DCX124EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EU;DI_DCX124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EU;DI_DCX124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EU;DI_DCX124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EU;DI_DCX124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142JH;DI_DCX142JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142JH;DI_DCX142JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142TH;DI_DCX142TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142TH;DI_DCX142TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143EH;DI_DCX143EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143EH;DI_DCX143EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TH;DI_DCX143TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TH;DI_DCX143TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TK;DI_DCX143TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TK;DI_DCX143TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TU;DI_DCX143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TU;DI_DCX143TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EH;DI_DCX144EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EH;DI_DCX144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EK;DI_DCX144EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EK;DI_DCX144EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EU;DI_DCX144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EU;DI_DCX144EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114EH;DI_DDA114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114EK;DI_DDA114EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114EU;DI_DDA114EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TH;DI_DDA114TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TK;DI_DDA114TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TU;DI_DDA114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TU;DI_DDA114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114YH;DI_DDA114YH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114YH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114YK;DI_DDA114YK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114YK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114YU;DI_DDA114YU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114YU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122LH;DI_DDA122LH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122LH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122LU;DI_DDA122LU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122LU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122TH;DI_DDA122TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122TU;DI_DDA122TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA123JH;DI_DDA123JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA123JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA123JK;DI_DDA123JK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA123JK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EH;DI_DDA124EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EK;DI_DDA124EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EU;DI_DDA124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EU;DI_DDA124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142JH;DI_DDA142JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142JU;DI_DDA142JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142JU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142TH;DI_DDA142TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142TU;DI_DDA142TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143EH;DI_DDA143EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TH;DI_DDA143TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TK;DI_DDA143TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TU;DI_DDA143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TU;DI_DDA143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EH;DI_DDA144EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EK;DI_DDA144EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EU;DI_DDA144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EU;DI_DDA144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114EH;DI_DDC114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114EU;DI_DDC114EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114TH;DI_DDC114TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114TU;DI_DDC114TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114YU;DI_DDC114YU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114YU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122TH;DI_DDC122TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122TU;DI_DDC122TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC123JH;DI_DDC123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC123JU;DI_DDC123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC124EH;DI_DDC124EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC124EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC124EU;DI_DDC124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142JH;DI_DDC142JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142JU;DI_DDC142JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142TH;DI_DDC142TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142TU;DI_DDC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC143EH;DI_DDC143EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC143EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC143TU;DI_DDC143TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC143TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC144EH;DI_DDC144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC144EU;DI_DDC144EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC144EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TCA;DI_DDTA113TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TE;DI_DDTA113TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TUA;DI_DDTA113TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZCA;DI_DDTA113ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZE;DI_DDTA113ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZUA;DI_DDTA113ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114ECA;DI_DDTA114ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114EE;DI_DDTA114EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114EUA;DI_DDTA114EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114GCA;DI_DDTA114GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114GCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114GE;DI_DDTA114GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114GE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114GUA;DI_DDTA114GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114GUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TCA;DI_DDTA114TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TE;DI_DDTA114TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TUA;DI_DDTA114TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WCA;DI_DDTA114WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WE;DI_DDTA114WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WUA;DI_DDTA114WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YCA;DI_DDTA114YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YE;DI_DDTA114YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) *SRC=DDTA114YLP;;BJTs PNP; Si; 50.0V 0.100A 250MHz Diodes, Inc. .MODEL PNP (IS=10.2f NF=1.00 BF=1.14k VAF=127 + IKF=14.7m ISE=25.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=54.2m RB=0.217 RC=21.7m + XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=9.94p VJC=0.300 + MJC=0.300 TF=552p TR=95.0n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YUA;DI_DDTA114YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115ECA;DI_DDTA115ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115EE;DI_DDTA115EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115EUA;DI_DDTA115EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115GCA;DI_DDTA115GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115GCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115GE;DI_DDTA115GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115GE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115GUA;DI_DDTA115GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115GUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TCA;DI_DDTA115TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TE;DI_DDTA115TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TUA;DI_DDTA115TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122LE;DI_DDTA122LE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122LE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122LU;DI_DDTA122LU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122LU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122TE;DI_DDTA122TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122TU;DI_DDTA122TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123ECA;DI_DDTA123ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123EE;DI_DDTA123EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123EUA;DI_DDTA123EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JCA;DI_DDTA123JCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JE;DI_DDTA123JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JUA;DI_DDTA123JUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TCA;DI_DDTA123TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TE;DI_DDTA123TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TUA;DI_DDTA123TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YCA;DI_DDTA123YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YE;DI_DDTA123YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YUA;DI_DDTA123YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124ECA;DI_DDTA124ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124EE;DI_DDTA124EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124EUA;DI_DDTA124EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124GCA;DI_DDTA124GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124GCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124GE;DI_DDTA124GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124GE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124GUA;DI_DDTA124GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124GUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TCA;DI_DDTA124TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TE;DI_DDTA124TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TUA;DI_DDTA124TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XCA;DI_DDTA124XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XE;DI_DDTA124XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XUA;DI_DDTA124XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TCA;DI_DDTA125TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TE;DI_DDTA125TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TUA;DI_DDTA125TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142JE;DI_DDTA142JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142JE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142JU;DI_DDTA142JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142JU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142TE;DI_DDTA142TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142TU;DI_DDTA142TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ECA;DI_DDTA143ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143EE;DI_DDTA143EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143EUA;DI_DDTA143EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FCA;DI_DDTA143FCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FE;DI_DDTA143FE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FUA;DI_DDTA143FUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TCA;DI_DDTA143TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TE;DI_DDTA143TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TUA;DI_DDTA143TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XCA;DI_DDTA143XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XE;DI_DDTA143XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XUA;DI_DDTA143XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZCA;DI_DDTA143ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZE;DI_DDTA143ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZUA;DI_DDTA143ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144ECA;DI_DDTA144ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144EE;DI_DDTA144EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144EUA;DI_DDTA144EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144GCA;DI_DDTA144GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144GCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144GE;DI_DDTA144GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144GE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144GUA;DI_DDTA144GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144GUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TCA;DI_DDTA144TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TE;DI_DDTA144TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TUA;DI_DDTA144TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VCA;DI_DDTA144VCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VE;DI_DDTA144VE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VUA;DI_DDTA144VUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WCA;DI_DDTA144WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WE;DI_DDTA144WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WUA;DI_DDTA144WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113EC;DI_DDTB113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113EU;DI_DDTB113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113ZC;DI_DDTB113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113ZU;DI_DDTB113ZU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113ZU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114EC;DI_DDTB114EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114EU;DI_DDTB114EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114GC;DI_DDTB114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114GU;DI_DDTB114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114TC;DI_DDTB114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114TU;DI_DDTB114TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122JC;DI_DDTB122JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122JU;DI_DDTB122JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122LC;DI_DDTB122LC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122LC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122LU;DI_DDTB122LU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122LU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122TC;DI_DDTB122TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122TU;DI_DDTB122TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123EC;DI_DDTB123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123EU;DI_DDTB123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123TC;DI_DDTB123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123TU;DI_DDTB123TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123YC;DI_DDTB123YC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123YC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123YU;DI_DDTB123YU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123YU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB133HC;DI_DDTB133HC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB133HC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB133HU;DI_DDTB133HU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB133HU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142JC;DI_DDTB142JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142JU;DI_DDTB142JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142TC;DI_DDTB142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142TU;DI_DDTB142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143EU;DI_DDTB143EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143TC;DI_DDTB143TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143TU;DI_DDTB143TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TCA;DI_DDTC113TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TE;DI_DDTC113TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) *SRC=DDTA113TLP;;BJTs PNP; Si; 50.0V 0.100A 250MHz Diodes, Inc. - .MODEL PNP (IS=10.2f NF=1.00 BF=415 VAF=127 + IKF=74.6m ISE=82.5f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=0.615 RB=2.46 RC=0.246 + XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=9.94p VJC=0.300 + MJC=0.300 TF=479p TR=97.1n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TUA;DI_DDTC113TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113ZCA;DI_DDTC113ZCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113ZE;DI_DDTC113ZE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113ZUA;DI_DDTC113ZUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114EE;DI_DDTC114EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114EUA;DI_DDTC114EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114GUA;DI_DDTC114GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TCA;DI_DDTC114TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TE;DI_DDTC114TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TUA;DI_DDTC114TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WCA;DI_DDTC114WCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WE;DI_DDTC114WE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WUA;DI_DDTC114WUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YCA;DI_DDTC114YCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YE;DI_DDTC114YE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YUA;DI_DDTC114YUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115EE;DI_DDTC115EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115EUA;DI_DDTC115EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115GE;DI_DDTC115GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115GUA;DI_DDTC115GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TCA;DI_DDTC115TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TE;DI_DDTC115TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TUA;DI_DDTC115TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122LE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122LU;DI_DDTC122LU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122LU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122LE;DI_DDTC122TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122LE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122TU;DI_DDTC122TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123EE;DI_DDTC123EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123EUA;DI_DDTC123EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123JE;DI_DDTC123JE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123JE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123JUA;DI_DDTC123JUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123JUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TCA;DI_DDTC123TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TE;DI_DDTC123TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TUA;DI_DDTC123TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123YCA;DI_DDTC123YCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123YE;DI_DDTC123YE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123YUA;DI_DDTC123YUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124EE;DI_DDTC124EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124EUA;DI_DDTC124EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124GE;DI_DDTC124GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124GUA;DI_DDTC124GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TCA;DI_DDTC124TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TE;DI_DDTC124TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TUA;DI_DDTC124TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XCA;DI_DDTC124XCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XE;DI_DDTC124XE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XUA;DI_DDTC124XUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TCA;DI_DDTC125TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TE;DI_DDTC125TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TUA;DI_DDTC125TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142JE;DI_DDTC142JE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142JE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142JU;DI_DDTC142JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142TE;DI_DDTC142TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142TE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142TU;DI_DDTC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143EE;DI_DDTC143EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143EUA;DI_DDTC143EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FCA;DI_DDTC143FCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FE;DI_DDTC143FE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FUA;DI_DDTC143FUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TCA;DI_DDTC143TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TE;DI_DDTC143TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TUA;DI_DDTC143TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XCA;DI_DDTC143XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XE;DI_DDTC143XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XUA;DI_DDTC143XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZCA;DI_DDTC143ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZE;DI_DDTC143ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZUA;DI_DDTC143ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144ECA;DI_DDTC144ECA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144EE;DI_DDTC144EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144EUA;DI_DDTC144EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144GE;DI_DDTC144GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144GUA;DI_DDTC144GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TCA;DI_DDTC144TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TE;DI_DDTC144TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TUA;DI_DDTC144TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VCA;DI_DDTC144VCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VE;DI_DDTC144VE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VUA;DI_DDTC144VUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WCA;DI_DDTC144WCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WE;DI_DDTC144WE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WUA;DI_DDTC144WUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113EC;DI_DDTD113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113EU;DI_DDTD113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113ZC;DI_DDTD113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113ZU;DI_DDTD113ZU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113ZU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114EC;DI_DDTD114EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114EU;DI_DDTD114EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114GC;DI_DDTD114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114GU;DI_DDTD114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114TC;DI_DDTD114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114TU;DI_DDTD114TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122JC;DI_DDTD122JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122JU;DI_DDTD122JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122LC;DI_DDTD122LC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122LC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122TC;DI_DDTD122TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123EC;DI_DDTD123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123EU;DI_DDTD123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123TC;DI_DDTD123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123TU;DI_DDTD123TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123YC;DI_DDTD123YC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123YC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123YU;DI_DDTD123YU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123YU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD133HC;DI_DDTD133HC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD133HC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD133HU;DI_DDTD133HU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD133HU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142JC;DI_DDTD142JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142JU;DI_DDTD142JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142TC;DI_DDTD142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142TU;DI_DDTD142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143EC;DI_DDTD143EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143EU;DI_DDTD143EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143TC;DI_DDTD143TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143TU;DI_DDTD143TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** *SRC=DDZ10BSF;DDZ10BSF;Diodes;Zener <=10V; 9.66V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ10BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=21.3p RS=33.1 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.27f RS=0.437 N=1.13 ) .ENDS *SRC=DDZ10C;DI_DDZ10C;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ10C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.65 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ10CS;DI_DDZ10CS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ10CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.58 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ11BSF;DDZ11BSF;Diodes;Zener 10V-50V; 10.8V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ11BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.2 .MODEL DF D ( IS=19.1p RS=32.8 N=1.10 + CJO=36.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.81f RS=0.582 N=0.752 ) .ENDS *SRC=DDZ11C;DI_DDZ11C;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ11C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.77 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=2.30 N=2.97 ) .ENDS *SRC=DDZ11CS;DI_DDZ11CS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ11CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.70 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=2.30 N=2.97 ) .ENDS *SRC=DDZ12BSF;DDZ12BSF;Diodes;Zener 10V-50V; 11.7V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ12BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.2 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=34.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=0.527 N=0.681 ) .ENDS *SRC=DDZ12C;DI_DDZ12C;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ12C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.73 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=4.23 N=3.00 ) .ENDS *SRC=DDZ12CS;DI_DDZ12CS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ12CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.66 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=4.23 N=3.00 ) .ENDS *SRC=DDZ13B;DI_DDZ13B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ13B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=6.23 N=3.00 ) .ENDS *SRC=DDZ13BS;DI_DDZ13BS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ13BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.6 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=6.23 N=3.00 ) .ENDS *SRC=DDZ14;DI_DDZ14;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ14 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=8.23 N=3.00 ) .ENDS *SRC=DDZ14S;DI_DDZ14S;Diodes;Zener 10V-50V; 14.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ14S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=5.89p RS=29.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.18f RS=8.23 N=3.00 ) .ENDS *SRC=DDZ15;DI_DDZ15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ15S;DI_DDZ15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ16;DI_DDZ16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ16BSF;DI_DDZ16BSF;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ16BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=258p RS=2.2 N=0.35 ) .ENDS *SRC=DDZ16S;DI_DDZ16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=10.2 N=3.00 ) .ENDS *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=07Sep2016 *VERSION=1 .SUBCKT DDZ17 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=55f RS=.075 N=1.15 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=16.85 IBV=10u TBV1=.4m IKF=30m EG=1.16) .MODEL DR D ( IS=5f RS=6k N=10 BV=16 IBV=1p ISR=1f Eg=.08 TBV1=-1m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DDZ18C;DI_DDZ18C;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ18C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=15.2 N=3.00 ) .ENDS *SRC=DDZ18CS;DI_DDZ18CS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ18CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 ) .ENDS *SRC=DDZ20C;DI_DDZ20C;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ20C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=20.2 N=3.00 ) .ENDS *SRC=DDZ20CS;DI_DDZ20CS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ20CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 ) .ENDS *SRC=DDZ22D;DI_DDZ22D;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ22D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=14.5 N=3.00 ) .ENDS *SRC=DDZ22DS;DI_DDZ22DS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ22DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 ) .ENDS *SRC=DDZ24C;DI_DDZ24C;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ24C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=19.5 N=3.00 ) .ENDS *SRC=DDZ24CS;DI_DDZ24CS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ24CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 ) .ENDS *SRC=DDZ27D;DI_DDZ27D;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=29.5 N=3.00 ) .ENDS *SRC=DDZ27DS;DI_DDZ27DS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 ) .ENDS *SRC=DDZ27DSF;DI_DDZ27DSF;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=29.5 N=3.00 ) .ENDS *SRC=DDZ30D;DI_DDZ30D;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ30D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=39.5 N=3.00 ) .ENDS *SRC=DDZ30DS;DI_DDZ30DS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ30DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 ) .ENDS *SRC=DDZ33;DI_DDZ33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=59.5 N=3.00 ) .ENDS *SRC=DDZ33S;DI_DDZ33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 ) .ENDS *SRC=DDZ36;DI_DDZ36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.4 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=69.5 N=3.00 ) .ENDS *SRC=DDZ36S;DI_DDZ36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZ39F;DI_DDZ39F;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ39F 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.4 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=69.5 N=3.00 ) .ENDS *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Jan2016 *VERSION=1 .SUBCKT DDZ3V6BSF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=10f RS=.5 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=3.35 IBV=.1u TBV1=-1m) .MODEL DR D ( IS=5f RS=6k N=10 BV=.5 IBV=1f ISR=1f Eg=1.4 TBV1=-6m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DDZ43;DI_DDZ43;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.4 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZ43S;DI_DDZ43S;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ43S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 ) .ENDS *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=13Jun2016 *VERSION=1 .SUBCKT DDZ4V3BSF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=10f RS=.5 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=4 IBV=.6u TBV1=-1m) .MODEL DR D ( IS=5f RS=6k N=10 BV=.5 IBV=1f ISR=1f Eg=1.4 TBV1=-6m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=8Aug2016 *VERSION=1 .SUBCKT DDZ4V7ASF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=15f RS=.15 N=1.07 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=4.31 IBV=6u TBV1=.1m ISR=50f) .MODEL DR D ( IS=10f RS=3k N=10 BV=2.5 IBV=10p ISR=150p Eg=1.4 TBV1=-.1m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DDZ5V1B;DI_DDZ5V1B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) .ENDS *SRC=DDZ5V1BS;DI_DDZ5V1BS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V1BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) .ENDS *SRC=DDZ5V6B;DI_DDZ5V6B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V6B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) .ENDS *SRC=DDZ5V6BS;DI_DDZ5V6BS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V6BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) .ENDS *SRC=DDZ6V2B;DI_DDZ6V2B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V2B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) .ENDS *SRC=DDZ6V2BS;DI_DDZ6V2BS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V2BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) .ENDS *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=26Feb2016 *VERSION=1 .SUBCKT DDZ6V8B 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=30f RS=.22 N=1.13 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=6.5 IBV=1u TBV1=.3m NBV=.8) .MODEL DR D ( IS=5f RS=4k N=10 BV=4.5 IBV=1f ISR=1f Eg=1.4 TBV1=-1.22m NBV=3) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, Un *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=26Feb2016 *VERSION=1 .SUBCKT DDZ6V8BSF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=30f RS=.22 N=1.13 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=6.5 IBV=1u TBV1=.3m NBV=.8) .MODEL DR D ( IS=5f RS=4k N=10 BV=4.5 IBV=1f ISR=1f Eg=1.4 TBV1=-1.22m NBV=3) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, Un *SRC=DDZ6V8C;DI_DDZ6V8C;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) .ENDS *SRC=DDZ6V8CS;DI_DDZ6V8CS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V8CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) .ENDS *SRC=DDZ7V5C;DI_DDZ7V5C;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ7V5C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) .ENDS *SRC=DDZ7V5CS;DI_DDZ7V5CS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ7V5CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) .ENDS *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1Mar2011 *VERSION=2 .SUBCKT DDZ8V2C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.6 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.8 N=1 ) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=DDZ8V2CS;DI_DDZ8V2CS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ8V2CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ9678;DDZ9678;Diodes;Zener <=10V; 1.80V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ9678 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.08 .MODEL DF D ( IS=114p RS=3.13 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17n RS=8.5 N=8.5 ) .ENDS *DIODES_INC_SPICE_MODEL PD3Z284C5V6 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=02/12/15 *VERSION=1 *PINS 1=A 2=K .SUBCKT DDZ9684 1 2 * Terminals A K D1 1 2 DF DR 3 1 DR VZ 2 3 2.25 .MODEL DF D ( IS=1.5f RS=.22 N=1 + CJO=119p VJ=0.750 M=0.330 TT=50.1n BV=5.1 IBV=3u TBV1=.31m TRS1=3m NBV=1.8) .MODEL DR D ( IS=80f RS=200 N=2 EG=1.4) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DDZ9688;DI_DDZ9688;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9688 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.75 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77n RS=0.05k N=6 ) .ENDS *SRC=DDZ9689;DI_DDZ9689;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9689 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.15 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=3.95k N=3.00 ) .ENDS *SRC=DDZ9689S;DI_DDZ9689S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9689S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.08 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=3.95k N=3.00 ) .ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/09/2014 *VERSION=1 .model DDZ9689T D(IS=.015p RS=.06 CJO=165p M=0.5 IKF=20m VJ=0.5 N=1.08 BV=5.8 NBVL=24 NBV=1.2 IBVL=.15m IBV=.4m TT=40n EG=1.1 TRS1=1.1m TBV1=.01m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=DDZ9690;DI_DDZ9690;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.79 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=946 N=3.00 ) .ENDS *SRC=DDZ9690S;DI_DDZ9690S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.72 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=946 N=3.00 ) .ENDS *SRC=DDZ9690T;DI_DDZ9690T;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.70 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.21f RS=946 N=3.00 ) .ENDS *SRC=DDZ9691;DI_DDZ9691;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.31 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=230 N=1.49 ) .ENDS *SRC=DDZ9691S;DI_DDZ9691S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.28 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=230 N=1.49 ) .ENDS *SRC=DDZ9691T;DI_DDZ9691T;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.27 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.99f RS=230 N=1.49 ) .ENDS *SRC=DDZ9692;DI_DDZ9692;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9692S;DI_DDZ9692S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9692T;DI_DDZ9692T;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9693;DI_DDZ9693;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9693S;DI_DDZ9693S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9693T;DI_DDZ9693T;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9694;DI_DDZ9694;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.07 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=34.5 N=0.223 ) .ENDS *SRC=DDZ9694S;DI_DDZ9694S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=34.5 N=0.223 ) .ENDS *SRC=DDZ9694T;DI_DDZ9694T;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.51f RS=34.5 N=0.223 ) .ENDS *SRC=DDZ9696;DI_DDZ9696;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.90 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=50.6 N=0.327 ) .ENDS *SRC=DDZ9696S;DI_DDZ9696S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.89 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=50.6 N=0.327 ) .ENDS *SRC=DDZ9696T;DI_DDZ9696T;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.89 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.36f RS=50.6 N=0.327 ) .ENDS *SRC=DDZ9697;DI_DDZ9697;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.73 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9697S;DI_DDZ9697S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.72 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9697T;DI_DDZ9697T;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9698;DI_DDZ9698;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9698 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9698T;DI_DDZ9698T;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9698T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9699;DI_DDZ9699;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=6.9 N=0.446 ) .ENDS *SRC=DDZ9699S;DI_DDZ9699S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9699T;DI_DDZ9699T;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9700;DI_DDZ9700;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=6.9 N=0.446 ) .ENDS *SRC=DDZ9700S;DI_DDZ9700S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9700T;DI_DDZ9700T;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.51e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9701;DI_DDZ9701;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9701 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=434.6p RS=534.7m N=1.8 + CJO=100p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=51.11f RS=3.404m N=0.750 ) .ENDS *SRC=DDZ9702;DI_DDZ9702;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=6.9 N=0.446 ) .ENDS *SRC=DDZ9702S;DI_DDZ9702S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9702T;DI_DDZ9702T;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9703;DI_DDZ9703;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9703S;DI_DDZ9703S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9703T;DI_DDZ9703T;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.73e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9705;DI_DDZ9705;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9705S;DI_DDZ9705S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9705T;DI_DDZ9705T;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9707;DI_DDZ9707;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9707S;DI_DDZ9707S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9707T;DI_DDZ9707T;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.18e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9708;DI_DDZ9708;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9708S;DI_DDZ9708S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9708T;DI_DDZ9708T;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.62e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9709;DI_DDZ9709;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9709S;DI_DDZ9709S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9709T;DI_DDZ9709T;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9711;DI_DDZ9711;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9711S;DI_DDZ9711S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9711T;DI_DDZ9711T;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9712;DI_DDZ9712;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=92.0 N=0.594 ) *SRC=DDZ9712S;DI_DDZ9712S;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9712T;DI_DDZ9712T;Diodes;Zener 10V-50V; 28.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.21p RS=26.7 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9713;DI_DDZ9713;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9713S;DI_DDZ9713S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9713T;DI_DDZ9713T;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9714;DI_DDZ9714;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=1.35k N=3.00 ) .ENDS *SRC=DDZ9714S;DI_DDZ9714S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 ) .ENDS *SRC=DDZ9714T;DI_DDZ9714T;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.9 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75e-016 RS=1.35k N=3.00 ) .ENDS *SRC=DDZ9715;DI_DDZ9715;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.9 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=13.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=4.45k N=3.00 ) .ENDS *SRC=DDZ9715S;DI_DDZ9715S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.0 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9715T;DI_DDZ9715T;Diodes;Zener 10V-50V; 36.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.9 .MODEL DF D ( IS=1.72p RS=25.9 N=1.10 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9716;DI_DDZ9716;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=4.45k N=3.00 ) .ENDS *SRC=DDZ9716S;DI_DDZ9716S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9716T;DI_DDZ9716T;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9717;DI_DDZ9717;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.8 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58e-016 RS=6.25k N=3.00 ) .ENDS *SRC=DDZ9717S;DI_DDZ9717S;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.7 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83e-016 RS=6.25k N=3.00 ) *SRC=DDZ9717T;DI_DDZ9717T;Diodes;Zener 10V-50V; 43.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.7 .MODEL DF D ( IS=1.44p RS=25.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.87e-016 RS=6.25k N=3.00 ) .ENDS *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=13May2016 *VERSION=1 .SUBCKT DDZ9V1BSF 1 2 * Terminals A K D1 1 2 DF DZ 1 2 DR .MODEL DF D ( IS=55f RS=.075 N=1.15 + CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=8.6 IBV=10u TBV1=.4m IKF=30m EG=1.16) .MODEL DR D ( IS=5f RS=6k N=10 BV=7 IBV=1p ISR=1f Eg=.05 TBV1=-1m) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DDZ9V1C;DI_DDZ9V1C;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ9V1C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.76 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ9V1CS;DI_DDZ9V1CS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ9V1CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.68 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX10C;DI_DDZX10C;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX10C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.61 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.47f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX11C;DI_DDZX11C;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX11C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.74 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.25f RS=2.30 N=2.97 ) .ENDS *SRC=DDZX12C;DI_DDZX12C;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX12C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.69 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=4.23 N=3.00 ) .ENDS *SRC=DDZX13B;DI_DDZX13B;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX13B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.90f RS=6.23 N=3.00 ) .ENDS *SRC=DDZX14;DI_DDZX14;Diodes;Zener 10V-50V; 14.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX14 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=8.83p RS=30.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.77f RS=8.23 N=3.00 ) .ENDS *SRC=DDZX15;DI_DDZX15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX16;DI_DDZX16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.55f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX18C;DI_DDZX18C;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX18C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=15.2 N=3.00 ) .ENDS *SRC=DDZX20C;DI_DDZX20C;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX20C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=20.2 N=3.00 ) .ENDS *SRC=DDZX22D;DI_DDZX22D;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX22D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=14.5 N=3.00 ) .ENDS *SRC=DDZX24C;DI_DDZX24C;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX24C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=19.5 N=3.00 ) .ENDS *SRC=DDZX27D;DI_DDZX27D;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) .ENDS *SRC=DDZX30D;DI_DDZX30D;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX30D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) .ENDS *SRC=DDZX33;DI_DDZX33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=59.5 N=3.00 ) .ENDS *SRC=DDZX36;DI_DDZX36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX39F;DI_DDZX39F;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX43;DI_DDZX43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZX5V1B;DI_DDZX5V1B;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.58 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85f RS=13.1 N=3.00 ) .ENDS *SRC=DDZX5V6B;DI_DDZX5V6B;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V6B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.19 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41f RS=7.11 N=3.00 ) .ENDS *SRC=DDZX6V2B;DI_DDZX6V2B;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V2B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.87 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.99f RS=3.11 N=3.00 ) .ENDS *SRC=DDZX6V8C;DI_DDZX6V8C;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.52 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.64f RS=1.15 N=2.97 ) .ENDS *SRC=DDZX7V5C;DI_DDZX7V5C;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX7V5C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.17 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.30f RS=2.12 N=3.00 ) .ENDS *SRC=DDZX8V2C;DI_DDZX8V2C;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX8V2C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.82 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.01f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX9V1C;DI_DDZX9V1C;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX9V1C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.72f RS=4.11 N=3.00 ) .ENDS * SPICE 3 Model for DESD5V0U1BA 1 Channel SOD323 ***************************************************************************** * (C) Copyright 2016 Diodes Incorporated. All rights reserved. ***************************************************************************** ** This model is designed as an aid not an accurate physical model ** DIODES make no warranties with this model ** The model is provided solely on an "as is" basis. ** The entire risk as to its quality and performance is with the customer. ***************************************************************************** * * This model is subject to change without notice. * Diodes is not responsible that this model is actual or to give notice about changes ***************************************************************************** * * Updates: * * Version 1.0 * ***************************************************************************** *â€Provides ESD Protection per IEC 61000-4-2 Standard: Contact ±10kV *â€1 Channel of ESD Protection *â€Low Channel Input Capacitance *â€Typically Used in Cellular Handsets, Portable Electronics, *Communication Systems, Computers and Peripherals ***************************************************************************** .SUBCKT DESD5V0U1BA 1 2 * Pin 1 = Electrode 1 * Pin 2 = Electrode 2 * Terminals A K D1 1 3 ZDiode D2 2 3 ZDiode .ENDS DESD5V0U1BA * .MODEL ZDiode d +IS=1e-13 RS=0.151 N=0.957115 EG=1.3 +XTI=4 BV=6.47 IBV=0.00025 CJO=5.52e-12 +VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09 +KF=0 AF=1 *SRC=DF005M;DI_DF005M;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005M D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF005S;DI_DF005S;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005S D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01M;DI_DF01M;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01M D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01S;DI_DF01S;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01S D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02M;DI_DF02M;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02M D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02S;DI_DF02S;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02S D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04M;DI_DF04M;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04M D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04S;DI_DF04S;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04S D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06M;DI_DF06M;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06M D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06S;DI_DF06S;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06S D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08M;DI_DF08M;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08M D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08S;DI_DF08S;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08S D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10M;DI_DF10M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10M D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10S;DI_DF10S;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10S D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF15005S;DI_DF15005S;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF15005S D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1501S;DI_DF1501S;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1501S D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1502S;DI_DF1502S;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1502S D ( IS=2.06n RS=28.1m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1504S;DI_DF1504S;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1504S D ( IS=2.06n RS=28.1m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1506S;DI_DF1506S;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1506S D ( IS=2.06n RS=28.1m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1508S;DI_DF1508S;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1508S D ( IS=2.06n RS=28.1m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1510S;DI_DF1510S;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1510S D ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *DFLF1800 Spice Model v1.0 Last Revised 03/06/2014 Diodes Inc Fast Recovery Rectifier .MODEL DI_DFLF1800 D ( IS=59.0n RS=44.7m BV=800 IBV=10.00u + CJO=12.4p M=0.245 N=2.235 TT=4.32u ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SRC=DFLR1200;DI_DFLR1200;Diodes;Si; 200V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1200 D ( IS=5.90n RS=44.7m BV=200 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=DFLR1400;DI_DFLR1400;Diodes;Si; 400V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1400 D ( IS=5.90n RS=44.7m BV=400 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=DFLR1600;DI_DFLR1600;Diodes;Si; 600V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1600 D ( IS=5.90n RS=44.7m BV=600 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) *SRC=DFLS1100;DI_DFLS1100;Diodes;Si; 100V 1.00A 11.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1100 D ( IS=270n RS=28.3m BV=100 IBV=1.00u + CJO=70.9p M=0.333 N=1.50 TT=15.8n ) *SRC=DFLS1150;DI_DFLS1150;Diodes;Si; 150V 1.00A 14.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1150 D ( IS=10.2u RS=27.0m BV=150 IBV=2.00u + CJO=55.2p M=0.333 N=2.32 TT=20.2n ) *SRC=DFLS1200;DI_DFLS1200;Diodes;Si; 200V 1.00A 30.0ns Diodes Inc. Schottky .MODEL DI_DFLS1200 D ( IS=64.7u RS=10.3m BV=200 IBV=2.00u + CJO=45.3p M=0.333 N=3.25 TT=43.2n ) *SRC=DFLS120L;DI_DFLS120L;Diodes;Si; 20.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS120L D ( IS=21.0u RS=46.3m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.936 TT=7.20n ) *SRC=DFLS130;DI_DFLS130;Diodes;Si; 30.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS130 D ( IS=35.5u RS=54.5m BV=30.0 IBV=1.00m + CJO=97.1p M=0.333 N=1.09 TT=7.20n ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=10AUG2011 *VERSION=2 * .MODEL DFLS130L D(IS=10U RS=58m N=0.88 BV=30 IBV=0.36m NBV=150 + EG=0.62 ISR=30u CJO=396.4p VJ=0.31 M=0.48 TBV1=-0.007 TRS1=0.0045) *$ *SRC=DFLS140;DI_DFLS140;Diodes;Si; 40.0V 1.10A 5.00ns Diodes Inc Schottky .MODEL DI_DFLS140 D ( IS=163n RS=0.103 BV=40.0 IBV=20.0u + CJO=99.4p M=0.333 N=1.00 TT=7.20n ) *SRC=DFLS140L;DI_DFLS140L;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Low VF Schottky .MODEL DI_DFLS140L D ( IS=817n RS=32.2m BV=40.0 IBV=500u + CJO=293p M=0.333 N=1.01 TT=7.20n ) *SRC=DFLS160;DI_DFLS160;Diodes;Si; 60.0V 1.00A 10.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS160 D ( IS=736n RS=63.0m BV=60.0 IBV=100u + CJO=163p M=0.333 N=1.01 TT=14.4n ) *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=16/12/2014 *VERSION=1.1 * .SUBCKT DFLS2100 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D (IS=4n RS=.2 BV=110 IBV=50u CJO=88p M=.4 VJ=.55 N=1.05 IKF=60m TRS1=.006 TT=15n EG=.8) .model Dpn D(IS=1p IKF=100 BV=110 TT=50n EG=1.05 RS=.028 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DFLS220L;DI_DFLS220L;Diodes;Si; 20.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS220L D ( IS=20.3u RS=47.4m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.947 TT=7.20n ) *SRC=DFLS230;DI_DFLS230;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230 D ( IS=100u RS=52.2m BV=30.0 IBV=1.00m + CJO=133p M=0.333 N=1.27 TT=7.20n ) *SRC=DFLS230L;DI_DFLS230L;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230L D ( IS=125u RS=43.6m BV=30.0 IBV=1.00m + CJO=265p M=0.333 N=1.21 TT=7.20n ) *SRC=DFLS230LH;DI_DFLS230LH;Diodes;Si; 30.0V 1.00A 11.0ns Diodes Inc. Schottky .MODEL DI_DFLS230LH D ( IS=947n RS=32.4m BV=30.0 IBV=200u + CJO=206p M=0.333 N=0.957 TT=15.8n ) *SRC=DFLS240L;DI_DFLS240L;Diodes;Si; 40.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS240L D ( IS=516n RS=31.4m BV=40.0 IBV=500u + CJO=292p M=0.333 N=0.911 TT=7.20n ) *DFLS260 Spice Model v1.0 Last Revised 3/21/2017 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_DFLS260 D ( IS=721.4n RS=80.00m BV=60.00 IBV=10.00 + CJO=320.8p M=450.7m N=1.029 TT=10.00n EG=480.0m VJ=292.4m ) * (c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=24/02/2013 *VERSION=1 .model DFLT15A D(IS=4f RS=0.194 CJO=4000p M=0.6 VJ=0.5 ISR=.008u N=1.05 IKF=1m BV=16.9 IBV=100u TT=40n EG=.84 TRS1=.1m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DIO_DPG_YG *SIMULATOR=PSPICE *DATE=3/3/2022 *VERSION=1 *-----------------------DFLT26AQ Spice Model--------------------- .SUBCKT DFLT26AQ 1 2 * TERMINALS: Anode Cathode D1 1 2 D1 R1 1 2 1878.3meg .model D1 D(IS=958.5f RS=0.1298 CJO=4000p M=0.6 VJ=0.5 +N=1.376 +BV=30 IBV=500u TT=40n EG=.84) .ENDS * (c) 2022 Diodes Incorporated * The copyright in these models and the designs embodied belong * to Diodes Incorporated. They are supplied * free of charge by Diodes Incorporated for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * *DIODES_INC_SPICE_MODEL *ORIGIN=DIO_DPG_YG *SIMULATOR=PSPICE *DATE=10/12/2020 *VERSION=1 *-----------------------DFLT33AQ Spice Model--------------------- .SUBCKT DFLT33AQ 1 2 * TERMINALS: Anode Cathode D1 1 2 D1 R1 1 2 1878.3meg .model D1 D(IS=958.5f RS=0.1298 CJO=4000p M=0.6 VJ=0.5 +N=1.376 +BV=38.30 IBV=500u TT=40n EG=.84) .ENDS * (c) 2020 Diodes Incorporated * The copyright in these models and the designs embodied belong * to Diodes Incorporated. They are supplied * free of charge by Diodes Incorporated for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * *DIODES_INC_SPICE_MODEL *ORIGIN=DIO_DPG_YG *SIMULATOR=PSPICE *DATE=10/12/2020 *VERSION=1 *-----------------------DFLT33A Spice Model--------------------- .SUBCKT DFLT33A 1 2 * TERMINALS: Anode Cathode D1 1 2 D1 R1 1 2 1878.3meg .model D1 D(IS=958.5f RS=0.1298 CJO=4000p M=0.6 VJ=0.5 +N=1.376 +BV=38.30 IBV=500u TT=40n EG=.84) .ENDS * (c) 2020 Diodes Incorporated * The copyright in these models and the designs embodied belong * to Diodes Incorporated. They are supplied * free of charge by Diodes Incorporated for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * *DFLU1200 Spice Model v1.0 01/12/2017 Diodes Inc SuperFast Recovery Rectifier .MODEL DI_DFLU1200 D ( +LEVEL = 1 IS = 11n RS = 44.7m +N = 1.10 BV = 200 IBV = 5e-06 +CJO = 45p VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 3.14412 EG = 1.11 +TT = 33e-9 IKF = 6.06945e-06 TRS1 = -0.00446639 +TRS2 = 9.32759e-06 ) *(c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Rd, Suite 110, Plano, TX 75024, USA * DFLU1400 SPICE model * * THIS MODEL IS A SPICE SUBCIRCUIT. * ANY NETLIST USING IT MUST INCLUDE * A STATEMENT WITH THE FOLLOWING SYNTAX * * X1 DFLU1400 A C * * SUBCIRCUIT NODE 1 -> ANODE * SUBCIRCUIT NODE 2 -> CATHODE * .SUBCKT DFLU1400 1 2 D1 1 2 DFLU1400_1 D2 1 2 DFLU1400_2 * .MODEL DFLU1400_1 D ( +LEVEL = 1 IS = 8.97113e-10 RS = 0.218519 +N = 1.00753 BV = 400 IBV = 5e-06 +CJO = 1.7785e-11 VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 2.98187 EG = 1.19064 +TT = 33e-9 IKF = 6.06945e-06 TRS1 = -0.00446639 +TRS2 = 9.32759e-06 ) * .MODEL DFLU1400_2 D ( +LEVEL = 1 IS = 1.05089e-12 RS = 0.146586 +N = 1.16507 BV = 1E5 IBV = 1e-06 +CJO = 1.7785e-11 VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 3.14412 EG = 1.05458 +TRS1 = 0.000149447 TRS2 = 2.90699e-05 IKF = 9.9308e-06 +TT = 33e-9 ) * .ENDS DFLU1400 *SRC=DFLZ10;DI_DFLZ10;Diodes;Zener <=10V; 10.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.86 .MODEL DF D ( IS=41.2p RS=0.773 N=1.10 + CJO=622p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=0.230 N=1.49 ).ENDS *SRC=DFLZ11;DI_DFLZ11;Diodes;Zener 10V-50V; 11.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.58 .MODEL DF D ( IS=37.5p RS=0.759 N=1.10 + CJO=478p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49f RS=2.45 N=3.00 ).ENDS *SRC=DFLZ12;DI_DFLZ12;Diodes;Zener 10V-50V; 12.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.58 .MODEL DF D ( IS=34.3p RS=0.747 N=1.10 + CJO=427p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=2.45 N=3.00 ).ENDS *SRC=DFLZ13;DI_DFLZ13;Diodes;Zener 10V-50V; 13.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.5 .MODEL DF D ( IS=31.7p RS=0.736 N=1.10 + CJO=415p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34f RS=3.45 N=3.00 ).ENDS *SRC=DFLZ15;DI_DFLZ15;Diodes;Zener 10V-50V; 15.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.5 .MODEL DF D ( IS=27.5p RS=0.715 N=1.10 + CJO=402p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=3.00 ).ENDS *SRC=DFLZ16;DI_DFLZ16;Diodes;Zener 10V-50V; 16.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=25.7p RS=0.706 N=1.10 + CJO=371p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=2.89 N=3.00 ) .ENDS *SRC=DFLZ18;DI_DFLZ18;Diodes;Zener 10V-50V; 18.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=22.9p RS=0.689 N=1.10 + CJO=332p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ20;DI_DFLZ20;Diodes;Zener 10V-50V; 20.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=20.6p RS=0.674 N=1.10 + CJO=313p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ22;DI_DFLZ22;Diodes;Zener 10V-50V; 22.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=18.7p RS=0.661 N=1.10 + CJO=277p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ24;DI_DFLZ24;Diodes;Zener 10V-50V; 24.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=17.2p RS=0.648 N=1.10 + CJO=259p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ27;DI_DFLZ27;Diodes;Zener 10V-50V; 27.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=15.3p RS=0.631 N=1.10 + CJO=253p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.05f RS=2.89 N=3.00 ).ENDS *SRC=DFLZ33;DI_DFLZ33;Diodes;Zener 10V-50V; 33.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=12.5p RS=0.603 N=1.10 + CJO=220p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.50f RS=2.89 N=3.00 ) .ENDS *SRC=DFLZ36;DI_DFLZ36;Diodes;Zener 10V-50V; 36.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.9 .MODEL DF D ( IS=11.4p RS=0.590 N=1.10 + CJO=220p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=1.15 N=1.49 ) .ENDS *SRC=DFLZ39;DI_DFLZ39;Diodes;Zener 10V-50V; 39.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 37.9 .MODEL DF D ( IS=10.6p RS=0.579 N=1.10 + CJO=220p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.11f RS=1.15 N=1.49 ) .ENDS *SRC=DFLZ5V1;DI_DFLZ5V1;Diodes;Zener <=10V; 5.10V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.69 .MODEL DF D ( IS=80.8p RS=0.869 N=1.10 + CJO=1.80n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=16.2f RS=1.22 N=3.00 ).ENDS *SRC=DFLZ5V1Q;DI_DFLZ5V1Q;Diodes;Zener <=10V; 5.10V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ5V1Q 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.69 .MODEL DF D ( IS=80.8p RS=0.869 N=1.10 + CJO=1.80n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=16.2f RS=1.22 N=3.00 ) *SRC=DFLZ5V6;DI_DFLZ5V6;Diodes;Zener <=10V; 5.60V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.30 .MODEL DF D ( IS=73.6p RS=0.856 N=1.10 + CJO=1.52n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=14.7f RS=0.230 N=2.97 ).ENDS *SRC=DFLZ6V2;DI_DFLZ6V2;Diodes;Zener <=10V; 6.20V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.89 .MODEL DF D ( IS=66.5p RS=0.841 N=1.10 + CJO=1.26n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.3f RS=0.230 N=2.97 ).ENDS *SRC=DFLZ6V8;DI_DFLZ6V8;Diodes;Zener <=10V; 6.80V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=60.6p RS=0.828 N=1.10 + CJO=1.02n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.1f RS=0.230 N=2.97 ).ENDS *SRC=DFLZ7V5;DI_DFLZ7V5;Diodes;Zener <=10V; 7.50V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=54.9p RS=0.814 N=1.10 + CJO=926p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.0f RS=0.230 N=2.97 ).ENDS *SRC=DFLZ8V2;DI_DFLZ8V2;Diodes;Zener <=10V; 8.20V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=50.2p RS=0.801 N=1.10 + CJO=767p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.0f RS=0.230 N=2.97 ) *SRC=DFLZ9V1;DI_DFLZ9V1;Diodes;Zener <=10V; 9.10V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.96 .MODEL DF D ( IS=45.3p RS=0.786 N=1.10 + CJO=688p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.05f RS=0.230 N=1.49 ) *DATE=21MAR2023 *VERSION=1.1 .subckt dgd0211C VCC GND IN INB OUT V0 GND COM 0 R1 11 VCC 1m R2 N006 COM 1m R3 13 INB 1m C2 15 N006 3.5p S2 18 N001 15 N006 SMODswP S5 N006 15 11 N006 SMODvccuv R24 13 N006 1000k S19 N006 N008 14 N006 SMODsw D10 COM VCC DMOD M2 N007 20 N009 N006 NFET l=1u w=105u m=50 M1 N003 18 N005 11 PFET l=1u w=116u m=100 R4 12 IN 1m R5 11 12 1000k V1 N002 N006 2 S4 N006 14 13 N006 SMODI S6 N006 14 12 N006 SMODIB R7 N002 14 100k R6 15 N002 13.35k S1 N006 20 15 N006 SMODswN Elo N001 N006 11 N006 1.1 R9 18 N006 1.46k R12 N001 20 4.2k C1 18 N006 3.5p C3 20 N006 3.5p R11 15 N008 18k R8 11 N003 1.053 R13 N009 N006 1.11 S3 N006 N010 N009 N006 SMODsc S7 N004 11 11 N003 SMODsc R14 N004 18 1 R15 20 N010 1 R16 11 N006 312k R17 N005 OUT 1.9 R18 OUT N007 0.96 .MODEL SMODIB SW(Ron=10Meg Roff=1m Vt=1.45 Vh=0.15) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODswP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.01) .MODEL SMODswN SW(Ron=1Meg Roff=1m Vt=1.5 Vh=0.01) .MODEL DMOD D(BV=24) .MODEL SMODvccuv SW(Ron=10Meg Roff=1m Vt=4.625 Vh=0.125) .MODEL SMODI SW(Ron=1m Roff=10Meg Vt=1.45 Vh=0.15) .MODEL SMODsw SW(Ron=1m Roff=10Meg Vt=1 Vh=0.01) .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODsc SW(Ron=1m Roff=10Meg Vt=2 Vh=0.0001) .ends dgd0211C ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=02JUN2020 *VERSION=1.0 .subckt dgd0211C VCC GND IN INB OUT V0 GND COM 0 R1 11 VCC 1m R2 N006 COM 1m R3 13 INB 1m C2 15 N006 3.5p S2 18 N001 15 N006 SMODswP S5 N006 15 11 N006 SMODvccuv R24 13 N006 1000k S19 N006 N008 14 N006 SMODsw D10 COM VCC DMOD M2 N007 20 N009 N006 NFET l=1u w=105u m=50 M1 N003 18 N005 11 PFET l=1u w=116u m=100 R4 12 IN 1m R5 11 12 2000k V1 N002 N006 2 S4 N006 14 13 N006 SMODI S6 N006 14 12 N006 SMODIB R7 N002 14 100k R6 15 N002 13.35k S1 N006 20 15 N006 SMODswN Elo N001 N006 11 N006 1.1 R9 18 N006 1.46k R12 N001 20 4.2k C1 18 N006 3.5p C3 20 N006 3.5p R11 15 N008 18k R8 11 N003 1.053 R13 N009 N006 1.11 S3 N006 N010 N009 N006 SMODsc S7 N004 11 11 N003 SMODsc R14 N004 18 1 R15 20 N010 1 R16 11 N006 312k R17 N005 OUT 1.9 R18 OUT N007 0.96 .MODEL SMODIB SW(Ron=10Meg Roff=1m Vt=1.45 Vh=0.15) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODswP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.01) .MODEL SMODswN SW(Ron=1Meg Roff=1m Vt=1.5 Vh=0.01) .MODEL DMOD D(BV=24) .MODEL SMODvccuv SW(Ron=10Meg Roff=1m Vt=4.625 Vh=0.125) .MODEL SMODI SW(Ron=1m Roff=10Meg Vt=1.45 Vh=0.15) .MODEL SMODsw SW(Ron=1m Roff=10Meg Vt=1 Vh=0.01) .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODsc SW(Ron=1m Roff=10Meg Vt=2 Vh=0.0001) .ends dgd0211C ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DATE=06SEP2024 *VERSION=1.1 *30SEP2024 - Adjusted startup behaviour .subckt dgd0211e VCC COM IN XREF OUT R1 11 VCC 1m R2 N006 COM 1m R3 13 IN 1m C2 15 N006 3.5p S2 18 N001 15 N006 SMODswP R24 13 N006 1000k S19 N006 N009 14 N006 SMODsw D10 COM VCC DMOD M2 N008 20 N010 N006 NFET l=1u w=105u m=50 M1 N002 18 N005 11 PFET l=1u w=116u m=100 R4 12 N007 1m R5 N007 XREF 520k V1 N004 N006 2 S4 N006 14 13 12 SMODI R7 N004 14 100k R6 15 N004 11.35k S1 N006 20 15 N006 SMODswN Elo N001 N006 11 N006 1.1 R9 18 N006 1.75k R12 N001 20 4.8k C1 18 N006 3.5p C3 20 N006 3.5p R11 15 N009 14k R8 11 N002 1.053 R13 N010 N006 1.11 S3 N006 N011 N010 N006 SMODsc S7 N003 11 11 N002 SMODsc R14 N003 18 1 R15 20 N011 1 R16 VCC COM 5000k R17 N005 OUT 1.9 R18 OUT N008 0.96 R10 COM N007 480k S5 15 N004 11 N006 SMODvccuv .MODEL SMODIB SW(Ron=10Meg Roff=1m Vt=1.45 Vh=0.15) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODswP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.01) .MODEL SMODswN SW(Ron=1Meg Roff=1m Vt=1.5 Vh=0.01) .MODEL DMOD D(BV=24) .MODEL SMODvccuv SW(Ron=10Meg Roff=1m Vt=1.95 Vh=0.55) .MODEL SMODI SW(Ron=1m Roff=10Meg Vh=0.12) .MODEL SMODsw SW(Ron=1Meg Roff=1m Vt=1 Vh=0.01) .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODsc SW(Ron=1m Roff=10Meg Vt=2 Vh=0.05) .MODEL DMOD3P3 D(BV=2.9) .ends dgd0211e ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=21Mar2023 *VERSION=1.1 .subckt dgd0215 INB COM IN OUT VCC R1 11 VCC 1m R2 N006 COM 1m R3 13 IN 1m C2 15 N006 3.5p S2 18 N001 15 N006 SMODswP S5 N006 15 11 N006 SMODvccuv R24 13 N006 1000k S19 N006 N008 14 N006 SMODsw D10 COM VCC DMOD M2 N007 20 N009 N006 NFET l=1u w=105u m=50 M1 N003 18 N005 11 PFET l=1u w=116u m=100 R4 12 INB 1m R5 11 12 1000k V1 N002 N006 2 S4 N006 14 13 N006 SMODI S6 N006 14 12 N006 SMODIB R7 N002 14 100k R6 15 N002 13.35k S1 N006 20 15 N006 SMODswN Elo N001 N006 11 N006 1.1 R9 18 N006 1.46k R12 N001 20 4.2k C1 18 N006 3.5p C3 20 N006 3.5p R11 15 N008 18k R8 11 N003 1.053 R13 N009 N006 1.11 S3 N006 N010 N009 N006 SMODsc S7 N004 11 11 N003 SMODsc R14 N004 18 1 R15 20 N010 1 R16 11 N006 312k R17 N005 OUT 1.9 R18 OUT N007 0.96 .MODEL SMODIB SW(Ron=10Meg Roff=1m Vt=1.45 Vh=0.15) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODswP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.01) .MODEL SMODswN SW(Ron=1Meg Roff=1m Vt=1.5 Vh=0.01) .MODEL DMOD D(BV=24) .MODEL SMODvccuv SW(Ron=10Meg Roff=1m Vt=4.625 Vh=0.125) .MODEL SMODI SW(Ron=1m Roff=10Meg Vt=1.45 Vh=0.15) .MODEL SMODsw SW(Ron=1m Roff=10Meg Vt=1 Vh=0.01) .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODsc SW(Ron=1m Roff=10Meg Vt=2 Vh=0.0001) .ends dgd0215 ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=21MAR2023 *VERSION=1.1 .subckt dgd0216 INB COM IN OUT VCC R1 11 VCC 1m R2 N006 COM 1m R3 13 IN 1m C2 15 N006 3.5p S2 18 N001 15 N006 SMODswP S5 N006 15 11 N006 SMODvccuv R24 13 N006 1000k S19 N006 N008 14 N006 SMODsw D10 COM VCC DMOD M2 N007 20 N009 N006 NFET l=1u w=105u m=50 M1 N003 18 N005 11 PFET l=1u w=116u m=100 R4 12 INB 1m R5 11 12 1000k V1 N002 N006 2 S4 N006 14 13 N006 SMODI S6 N006 14 12 N006 SMODIB R7 N002 14 100k R6 15 N002 13.35k S1 N006 20 15 N006 SMODswN Elo N001 N006 11 N006 1.1 R9 18 N006 1.46k R12 N001 20 4.2k C1 18 N006 3.5p C3 20 N006 3.5p R11 15 N008 18k R8 11 N003 1.053 R13 N009 N006 1.11 S3 N006 N010 N009 N006 SMODsc S7 N004 11 11 N003 SMODsc R14 N004 18 1 R15 20 N010 1 R16 11 N006 312k R17 N005 OUT 1.9 R18 OUT N007 0.96 .MODEL SMODIB SW(Ron=10Meg Roff=1m Vt=1.45 Vh=0.15) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODswP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.01) .MODEL SMODswN SW(Ron=1Meg Roff=1m Vt=1.5 Vh=0.01) .MODEL DMOD D(BV=24) .MODEL SMODvccuv SW(Ron=10Meg Roff=1m Vt=4.625 Vh=0.125) .MODEL SMODI SW(Ron=1m Roff=10Meg Vt=1.45 Vh=0.15) .MODEL SMODsw SW(Ron=1Meg Roff=1m Vt=1 Vh=0.01) .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL SMODsc SW(Ron=1m Roff=10Meg Vt=2 Vh=0.0001) .ends dgd0216 ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=22FEB2024 *VERSION=1.0 * block symbol definitions .subckt dgd0227 NC INA COM INB OUTB VCC OUTA NC1 C1 dlyoutl COM 20p S1 drvlp illp dlyoutl COM SRSTP S2 illn drvln dlyoutl COM SRSTN R1 drvlp OUTA 1.4 tol=1.1 R2 drvln OUTA 1.2 tol=1 C2 OUTA COM 5.9n D1 COM OUTA DMOD D2 OUTA VCC DMOD E1 bias6 COM OUTA drvln 1 R3 bias6 dlyln 10k C3 dlyln COM 10p E2 bias7 COM drvlp OUTA 1 R4 bias7 dlylp 10k C4 dlylp COM 10p S3 illp VCC dlylp COM SILIMP S4 COM illn dlyln COM SILIMN S5 COM linst INA COM SDIN R5 INA COM 950k D3 COM INA DMOD D4 INA VCC DMOD E3 bias1 COM VCC COM 1 R6 bias1 ldelayu {RUdelay} C5 ldelayu COM {CUdelay} XX1 linst ldelay VCC ideal_inverter D5 COM VCC DMOD R7 VCC COM 550k S6 COM ldelayu ldelay COM SLIN R8 bias1 linst {RDdelay} C6 linst COM {CDdelay} C7 N003 COM 10p S7 COM N003 VCC COM SUVCC R9 N003 bias1 1k XX2 ldelayu N001 VCC ideal_inverter C8 dlyoutlb COM 20p S8 drvlpb illpb dlyoutlb COM SRSTP S9 illnb drvlnb dlyoutlb COM SRSTN R10 drvlpb OUTB 1.4 tol=1.1 R11 drvlnb OUTB 1.2 tol=1 C9 OUTB COM 5.9n D6 COM OUTB DMOD D7 OUTB VCC DMOD E4 bias9 COM OUTB drvlnb 1 R12 bias9 dlylnb 10k C10 dlylnb COM 10p E5 bias8 COM drvlpb OUTB 1 R13 bias8 dlylpb 10k C11 dlylpb COM 10p S10 illpb VCC dlylpb COM SILIMP S11 COM illnb dlylnb COM SILIMN S12 COM linstb INB COM SDIN R14 INB COM 950k D8 COM INB DMOD D9 INB VCC DMOD E6 bias2 COM VCC COM 1 R15 bias2 ldelayub {RUdelay} C12 ldelayub COM {CUdelay} XX4 linstb ldelayb VCC ideal_inverter S13 COM ldelayub ldelayb COM SLIN R16 bias2 linstb {RDdelay} C13 linstb COM {CDdelay} C14 N006 COM 10p S14 COM N006 VCC COM SUVCC R17 N006 bias2 1k XX5 ldelayub N004 VCC ideal_inverter XX3 N001 N002 dlyoutl VCC ideal_nor_2 XX7 N003 N002 VCC ideal_inverter XX6 N004 N005 dlyoutlb VCC ideal_nor_2 XX8 N006 N005 VCC ideal_inverter .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=10u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SILIMN SW(Ron=2.3 Roff=1m Vt=4.8 Vh=0.01) .MODEL SILIMP SW(Ron=2.1 Roff=1m Vt=5.6 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=100Meg Vt=1.5 Vh=0.15) .param CUdelay=10p RUdelay=5.7k CDdelay=10p RDdelay=4.9k .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=3.25 Vh=0.05) .ends dgd0227 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 ****************************************************************************** * (c) 2024 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=27Apr2021 *VERSION=1.0 * block symbol definitions .subckt dgd0506a VCC VB HO VS NC DT EN IN COM LO C1 uvvc COM 10p S1 COM hinst IN COM SLIN C2 hinst COM 0.01p D1 COM IN DMOD D2 IN VCC DMOD R1 IN COM 200k R2 bias1 hinst 100k S2 COM uvvc N001 COM SUVCC S3 COM N002 EN COM SDIN C3 hinstb COM 0.01p R3 EN COM 200k R4 N002 bias1 100k D3 COM EN DMOD D4 EN VCC DMOD C4 cdh COM 50n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM N001 DMOD R5 N001 COM 400k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 2.25 tol=1 R7 drvln LO 1.5 tol=1 C8 LO COM 3.5n D8 COM LO DMOD D9 LO N001 DMOD R8 VB VS 400k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 2.25 tol=1 R10 drvhn HO 1.5 tol=1 C10 HO VS 3.5n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh N001 ideal_comparator XX2 onconth cdh ondlyh N001 ideal_comparator XX3 cdl offcontl offdlyl N001 ideal_comparator XX4 oncontl cdl ondlyl N001 ideal_comparator D12 COM VB DMODH E1 bias1 COM N001 COM 1 E2 bias2 COM N001 COM 1 C12 cdl COM 50n XX5 lino uvvc lovc N001 ideal_nand_2 XX6 uvvc hino hivc N001 ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-22n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-33n/50.5n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-22n/50.5n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-33n/50.5n) XX7 lovc cdl N001 ideal_buffercd XX8 hivc cdh N001 ideal_buffercd XX9 ondlyh dlyouth onhrs N001 nor_2 XX10 offdlyh onhrs dlyouth N001 nor_2 XX11 ondlyl dlyoutl onlrs N001 nor_2 XX12 offdlyl onlrs dlyoutl N001 nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh N001 ideal_and_2 C14 hdelay COM {Cdelay} C15 ldelay COM {Cdelay} XX15 hinst hinstb N001 ideal_inverter XX17 hdelay hdelayb N001 ideal_inverter XX18 hinstb linstb N001 ideal_inverter XX19 ldelay ldelayb N001 ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp N001 dlylp COM SILIMP S12 COM illn dlyln COM SILIMN S13 COM hdelay hinst COM SDIN S14 COM ldelay hinstb COM SDIN DDT1 N001 N003 DMOD XX14 linstb N002 hdelayb N001 lino ideal_nor_3 XX16 hinstb N002 ldelayb N001 hino ideal_nor_3 F1 N001 hdelay V1 0.5 F2 N001 ldelay V1 0.5 V1 N003 DT 0 D13 N001 VB Dboost S15 N001 VCC EN COM SDIN .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=10u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=60 IBV=5u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=6.8 Vh=0.2) .param Cdelay=3.82p T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=22n tonT2=33n .MODEL SILIMN SW(Ron=4.5 Roff=1m Vt=3 Vh=0.01) .MODEL SILIMP SW(Ron=5.75 Roff=1m Vt=3.375 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=100Meg Vt=1.5 Vh=0.15) .MODEL Dboost D(IS=1.5f RS=8.5 CJO=150p M=0.3 VJ=0.75 ISR=1p BV=100 Ibv=5u) .ends dgd0506a .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter .subckt ideal_nor_3 A B C Vdd Y S1 Y N002 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N002 N001 Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p S4 N001 Vdd Vtrip C switmod S6 0 Y C Vtrip switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_3 ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=04JAN2023 *VERSION=1.0 * block symbol definitions .subckt dgd05463 VCC VB HO VS NC DT EN IN COM LO C1 uvvc COM 10p S1 COM hinst IN COM SLIN C2 hinst COM 0.01p D1 COM IN DMOD D2 IN VCC DMOD R1 IN COM 200k R2 bias1 hinst 100k S2 COM uvvc N001 COM SUVCC S3 COM N002 EN COM SDIN C3 hinstb COM 0.01p R3 EN COM 200k R4 N002 bias1 100k D3 COM EN DMOD D4 EN VCC DMOD C4 cdh COM 50n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM N001 DMOD R5 N001 COM 400k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 2.25 tol=1 R7 drvln LO 1.5 tol=1 C8 LO COM 3.5n D8 COM LO DMOD D9 LO N001 DMOD R8 VB VS 400k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 2.25 tol=1 R10 drvhn HO 1.5 tol=1 C10 HO VS 3.5n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh N001 ideal_comparator XX2 onconth cdh ondlyh N001 ideal_comparator XX3 cdl offcontl offdlyl N001 ideal_comparator XX4 oncontl cdl ondlyl N001 ideal_comparator D12 COM VB DMODH E1 bias1 COM N001 COM 1 E2 bias2 COM N001 COM 1 C12 cdl COM 50n XX5 lino uvvc lovc N001 ideal_nand_2 XX6 uvvc hino hivc N001 ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-22n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-33n/50.5n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-22n/50.5n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-33n/50.5n) XX7 lovc cdl N001 ideal_buffercd XX8 hivc cdh N001 ideal_buffercd XX9 ondlyh dlyouth onhrs N001 nor_2 XX10 offdlyh onhrs dlyouth N001 nor_2 XX11 ondlyl dlyoutl onlrs N001 nor_2 XX12 offdlyl onlrs dlyoutl N001 nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh N001 ideal_and_2 C14 hdelay COM {Cdelay} C15 ldelay COM {Cdelay} XX15 hinst hinstb N001 ideal_inverter XX17 hdelay hdelayb N001 ideal_inverter XX18 hinstb linstb N001 ideal_inverter XX19 ldelay ldelayb N001 ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp N001 dlylp COM SILIMP S12 COM illn dlyln COM SILIMN S13 COM hdelay hinst COM SDIN S14 COM ldelay hinstb COM SDIN DDT1 N001 N003 DMOD XX14 linstb N002 hdelayb N001 lino ideal_nor_3 XX16 hinstb N002 ldelayb N001 hino ideal_nor_3 F1 N001 hdelay V1 0.5 F2 N001 ldelay V1 0.5 V1 N003 DT 0 D13 N001 VB Dboost S15 N001 VCC EN COM SDIN .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=10u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=60 IBV=5u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=3.55 Vh=0.25) .param Cdelay=3.82p T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=22n tonT2=33n .MODEL SILIMN SW(Ron=4.5 Roff=1m Vt=3.75 Vh=0.01) .MODEL SILIMP SW(Ron=5.75 Roff=1m Vt=3.375 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=100Meg Vt=1.5 Vh=0.15) .MODEL Dboost D(IS=1.5f RS=8.5 CJO=150p M=0.3 VJ=0.75 ISR=1p BV=100 Ibv=5u) .ends dgd05463 .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter .subckt ideal_nor_3 A B C Vdd Y S1 Y N002 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N002 N001 Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p S4 N001 Vdd Vtrip C switmod S6 0 Y C Vtrip switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_3 ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=27Jul2022 *VERSION=1.1 .subckt dgd05473 VCC NC VB HO VS EN HIN LIN COM LO C1 uvvc COM 10p S2 COM uvvc VCC COM SUVCC C4 cdh COM 28.5n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 40k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 2.25 tol=1 R7 drvln LO 1.5 tol=1 C8 LO COM 2.3n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 130k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 2.25 tol=1 R10 drvhn HO 1.5 tol=1 C10 HO VS 2.3n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E2 bias2 COM VCC COM 1 C12 cdl COM 28.5n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-33n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-33n/50.5n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-33n/50.5n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-33n/50.5n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN S1 COM hinst HIN COM SLIN D1 COM HIN DMOD D2 HIN VCC DMOD R1 HIN COM 200k R2 bias1 hinst 100k S3 COM linst LIN COM SLIN R3 LIN COM 200k R4 linst bias1 100k D3 COM LIN DMOD D4 LIN VCC DMOD E1 bias1 COM VCC COM 1 R13 hinstb hdelay {Rdelay} C2 hdelay COM {Cdelay} R14 linstb ldelay {Rdelay} C3 ldelay COM {Cdelay} XX14 hinst hinstb VCC ideal_inverter XX15 hdelay hdelayb VCC ideal_inverter XX16 linst linstb VCC ideal_inverter XX17 ldelay ldelayb VCC ideal_inverter D14 COM EN DMOD D15 EN VCC DMOD S13 COM sdown EN COM SLEN R15 EN COM 116k R16 bias1 sdown 100k XX18 linstb hdelayb sdown VCC lino ideal_nor_3 XX19 hinstb sdown ldelayb VCC hino ideal_nor_3 D13 VCC VB Dboost .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=10u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=60 IBV=5u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=3.55 Vh=0.25) .MODEL SILIMN SW(Ron=4.5 Roff=1m Vt=3 Vh=0.01) .MODEL SILIMP SW(Ron=5.75 Roff=1m Vt=3.375 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=100Meg Vt=1.5 Vh=0.15) .MODEL Dboost D(IS=1.5f RS=8.5 CJO=150p M=0.3 VJ=0.75 ISR=1p BV=100 Ibv=5u) .MODEL SLEN SW(Ron=1m Roff=10Meg Vt=1.05 Vh=0.35) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=65n tonT2=58n .ends dgd05473 .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter .subckt ideal_nor_3 A B C Vdd Y S1 Y N002 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N002 N001 Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p S4 N001 Vdd Vtrip C switmod S6 0 Y C Vtrip switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_3 ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DGD05473FN *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE=15April2020 *VERSION=2 *#SIMETRIX *PIN ORDER 1=Vcc, 2=NC, 3=Vb, 4=HO, 5=VS, 6=EN, 7=HIN, 8=LIN, 9=COM, 10=LO .subckt DGD05473FN 1 2 3 4 5 6 7 8 9 10 R1 S3_N Q15_B 1 R2 S15_N Q2_B 1 R4 7 9 100k V7 Vcbias 9 12 R6 6 9 100k R7 8 9 100k Q13 3 Q15_B 4 0 Big_NPN D5 1 3 Dboost Q15 5 Q15_B 4 0 Big_PNP R10 hi_ctrl Vcbias 100k R11 lo_ctrl Vcbias 100k X$S10 lo_ctrl 9 6 9 gen_switch : RON=10m ROFF=5Meg VON=800m VOFF=2.4; pinnames: P N CP CN X$S11 lo_ctrl 9 1 9 gen_switch : RON=1 ROFF=5Meg VON=3.3 VOFF=3.8; pinnames: P N CP CN X$S12 hi_ctrl 9 6 9 gen_switch : RON=10m ROFF=5Meg VON=800m VOFF=2.4; pinnames: P N CP CN X$S13 hi_ctrl 9 x_hin 9 gen_switch : RON=10m ROFF=5Meg VON=5 VOFF=6; pinnames: P N CP CN X$S14 S3_N 5 hi_ctrl 9 gen_switch : RON=3 ROFF=5Meg VON=5 VOFF=5.1; pinnames: P N CP CN X$S15 1 S15_N lo_ctrl 9 gen_switch : RON=6.3 ROFF=10Meg VON=5.1 VOFF=5; pinnames: P N CP CN X$S17 hi_ctrl 9 x_lin 9 gen_switch : RON=1 ROFF=5Meg VON=6 VOFF=5 pinnames: P N CP CN X$S19 lo_ctrl 9 x_hin 9 gen_switch : RON=1 ROFF=5Meg VON=6 VOFF=5 pinnames: P N CP CN X$S1 S15_N 9 lo_ctrl 9 gen_switch : RON=3 ROFF=5Meg VON=5 VOFF=5.1 pinnames: P N CP CN X$S2 x_lin 9 8 9 gen_switch : RON=2.8k ROFF=10Meg VON=800m VOFF=2.4 pinnames: P N CP CN Q1 1 Q2_B 10 0 Big_NPN Q2 9 Q2_B 10 0 Big_PNP X$S3 3 S3_N hi_ctrl 9 gen_switch : RON=6.3 ROFF=10Meg VON=5.1 VOFF=5 pinnames: P N CP CN X$S4 x_hin 9 7 9 gen_switch : RON=2.8k ROFF=10Meg VON=800m VOFF=2.4 pinnames: P N CP CN X$S5 lo_ctrl 9 x_lin 9 gen_switch : RON=10m ROFF=5Meg VON=5 VOFF=6 pinnames: P N CP CN X$S7 Vcbias x_hin 7 9 gen_switch : RON=2.8k ROFF=10Meg VON=2.4 VOFF=800m pinnames: P N CP CN X$S8 Vcbias x_lin 8 9 gen_switch : RON=2.8k ROFF=10Meg VON=2.4 VOFF=800m pinnames: P N CP CN X$S9 hi_ctrl 9 3 5 gen_switch : RON=1 ROFF=5Meg VON=3.3 VOFF=3.8 pinnames: P N CP CN C1 Q15_B 5 1n C2 Q2_B 9 1n C3 x_hin 9 10p C4 x_lin 9 10p .subckt gen_switch 1 2 3 4 S1 1 2 3 4 SW .model SW VSWITCH RON={ron} ROFF={roff} VON={von} VOFF={voff} .ends .model Big_PNP pnp ( IS=3.58E-14 VAF=26.4 BF=300 IKF=0.3416 NE=1.2861 + ISE=3.830E-14 IKR=0.03 ISC=2.00E-12 NC=1.2 NR=1 BR=5 RC=0.4 CJC=1.80E-11 + FC=0.5 MJC=0.45 VJC=0.8 CJE=2.65E-11 MJE=0.33 VJE=0.75 TF=4.10E-10 + ITF=0.54 VTF=3 XTF=20 RE=1.4 TR=8.00E-08) .model Big_NPN npn ( IS=2.48E-13 VAF=73.9 BF=160 IKF=0.1962 NE=1.2069 + ISE=9.239E-14 IKR=0.02 ISC=5.00E-09 NC=2 NR=1 BR=5 RC=0.3 CJC=7.00E-12 + FC=0.5 MJC=0.5 VJC=0.5 CJE=1.80E-11 MJE=0.5 VJE=1 TF=4.00E-10 + ITF=2 VTF=10 XTF=10 RE=0.4 TR=4.00E-08) .model Dboost D(IS=15f RS=8m CJO=150p M=0.3 VJ=0.75 ISR=120n + BV=525 Ibv=100u) .ends DGD05473FN * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DATE=27Jul2022 *VERSION=1.1 .subckt DGD05473FNQ VCC NC VB HO VS EN HIN LIN COM LO C1 uvvc COM 10p S2 COM uvvc VCC COM SUVCC C4 cdh COM 28.5n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 40k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 2.25 tol=1 R7 drvln LO 1.5 tol=1 C8 LO COM 2.3n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 130k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 2.25 tol=1 R10 drvhn HO 1.5 tol=1 C10 HO VS 2.3n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E2 bias2 COM VCC COM 1 C12 cdl COM 28.5n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-33n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-33n/50.5n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-33n/50.5n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-33n/50.5n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN S1 COM hinst HIN COM SLIN D1 COM HIN DMOD D2 HIN VCC DMOD R1 HIN COM 200k R2 bias1 hinst 100k S3 COM linst LIN COM SLIN R3 LIN COM 200k R4 linst bias1 100k D3 COM LIN DMOD D4 LIN VCC DMOD E1 bias1 COM VCC COM 1 R13 hinstb hdelay {Rdelay} C2 hdelay COM {Cdelay} R14 linstb ldelay {Rdelay} C3 ldelay COM {Cdelay} XX14 hinst hinstb VCC ideal_inverter XX15 hdelay hdelayb VCC ideal_inverter XX16 linst linstb VCC ideal_inverter XX17 ldelay ldelayb VCC ideal_inverter D14 COM EN DMOD D15 EN VCC DMOD S13 COM sdown EN COM SLEN R15 EN COM 116k R16 bias1 sdown 100k XX18 linstb hdelayb sdown VCC lino ideal_nor_3 XX19 hinstb sdown ldelayb VCC hino ideal_nor_3 D13 VCC VB Dboost .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=10u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=60 IBV=5u CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=3.55 Vh=0.25) .MODEL SILIMN SW(Ron=4.5 Roff=1m Vt=3 Vh=0.01) .MODEL SILIMP SW(Ron=5.75 Roff=1m Vt=3.375 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=100Meg Vt=1.5 Vh=0.15) .MODEL Dboost D(IS=1.5f RS=8.5 CJO=150p M=0.3 VJ=0.75 ISR=1p BV=100 Ibv=5u) .MODEL SLEN SW(Ron=1m Roff=10Meg Vt=1.05 Vh=0.35) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=65n tonT2=58n .ends DGD05473FNQ .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter .subckt ideal_nor_3 A B C Vdd Y S1 Y N002 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N002 N001 Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p S4 N001 Vdd Vtrip C switmod S6 0 Y C Vtrip switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_3 ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=09May2022 *VERSION=1.1 .subckt dgd0579u VCC NC VB HO VS EN HIN LIN COM LO C1 uvvc COM 10p S1 COM hinst HIN COM SLIN D1 COM HIN DMOD D2 HIN VCC DMOD R1 HIN COM 750k R2 bias1 hinst 100k S2 COM uvvc VCC COM SUVCC S3 COM linst LIN COM SLIN R3 LIN COM 750k R4 linst bias1 100k D3 COM LIN DMOD D4 LIN VCC DMOD C4 cdh COM 50n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 210k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 4.2 tol=1 R7 drvln LO 3.77 tol=1 C8 LO COM 0.9n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 273k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 4.2 tol=1 R10 drvhn HO 3.77 tol=1 C10 HO VS 0.9n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVBS C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E1 bias1 COM VCC COM 1 E2 bias2 COM VCC COM 1 C12 cdl COM 50n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-56n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-65n/50.5n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-56n/50.5n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-65n/51.5n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 R13 hinstb hdelay {Rdelay} C14 hdelay COM {Cdelay} R14 linstb ldelay {Rdelay} C15 ldelay COM {Cdelay} XX16 hinst hinstb VCC ideal_inverter XX17 hdelay hdelayb VCC ideal_inverter XX18 linst linstb VCC ideal_inverter XX19 ldelay ldelayb VCC ideal_inverter E3 bias4 VS HO drvhn 1 R15 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R16 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R17 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R18 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN D13 COM EN DMOD D14 EN VCC DMOD S15 COM sdown EN COM SLEN R19 EN COM 750k R20 bias1 sdown 100k XX14 linstb hdelayb sdown VCC lino ideal_nor_3 XX15 hinstb sdown ldelayb VCC hino ideal_nor_3 D15 VCC VB Dboost .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=125 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.65 Vh=0.35) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=4.95 Vh=0.2) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=65n tonT2=58n .MODEL SILIMN SW(Ron=1 Roff=1m Vt=9.25 Vh=0.01) .MODEL SILIMP SW(Ron=4 Roff=1m Vt=6 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .MODEL SUVBS SW(Ron=10Meg Roff=1m Vt=4.7 Vh=0.2) .MODEL SLEN SW(Ron=1m Roff=10Meg Vt=1.05 Vh=0.35) .MODEL Dboost D(IS=1.5f RS=5.5 CJO=150p M=0.3 VJ=0.75 ISR=1p BV=125 Ibv=5u) .ends dgd0579u .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter .subckt ideal_nor_3 A B C Vdd Y S1 Y N002 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N002 N001 Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p S4 N001 Vdd Vtrip C switmod S6 0 Y C Vtrip switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_3 ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=15APR2022 *VERSION=1.0 .subckt dgd1003 VCC HIN LIN COM LO VS HO VB C1 uvvc COM 10p S1 COM hinst HIN COM SHIN C2 hinst COM 0.01p D1 COM HIN DMOD D2 HIN VCC DMOD R1 HIN COM 1.5Meg R2 bias1 hinst 100k S2 COM uvvc VCC COM SUVCC S3 COM linst LIN COM SLIN C3 linst COM 0.01p R3 bias3 LIN 1.5Meg R4 linst bias1 100k D3 COM LIN DMOD D4 LIN VCC DMOD C4 cdh COM 50n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 41.5k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp VCC dlyoutl COM SRSTP S5 COM drvln dlyoutl COM SRSTN R6 drvlp LO 22 tol=1 R7 drvln LO 9 tol=1 C8 LO COM 0.11n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 525k C9 onh COM 10p S6 drvhp VB onh COM SRSTP S7 VS drvhn onh COM SRSTN R9 drvhp HO 22 tol=1 R10 drvhn HO 9 tol=1 C10 HO VS 0.11n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E1 bias1 COM VCC COM 1 E2 bias2 COM VCC COM 1 C12 cdl COM 50n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-(toff)/51.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-(ton)/50.5n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-(toff)/51.5n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-(ton)/50.5n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 R13 hinstb hdelay {Rdelay} C14 hdelay COM {Cdelay} R14 linstb ldelay {Rdelay} C15 ldelay COM {Cdelay} XX14 hinst hinstb VCC ideal_inverter XX15 hdelay hdelayb VCC ideal_inverter XX16 linst linstb VCC ideal_inverter XX17 ldelay ldelayb VCC ideal_inverter V1 bias3 COM 5 XX18 linstb hdelayb lino VCC ideal_nor_2 XX19 hinstb ldelayb hino VCC ideal_nor_2 .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2 Ilimit=0.36) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2 Ilimit=0.21) .MODEL SLIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .PARAM Cdelay=0.001p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 ton=680n toff=150n .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.55 Vh=0.35) .MODEL SHIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .ends dgd1003 .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW .ends ideal_and_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW .ends ideal_inverter .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=10AUG2020 *VERSION=1.0 .subckt dgd2103M VCC HIN LIN COM LO VS HO VB C1 uvvc COM 10p S1 COM hinst HIN COM SHIN C2 hinst COM 0.01p D1 COM HIN DMOD D2 HIN VCC DMOD R1 HIN COM 1.667Meg R2 bias1 hinst 100k S2 COM uvvc VCC COM SUVCC S3 COM linst LIN COM SLIN C3 linst COM 0.01p R3 bias3 LIN 1.667Meg R4 linst bias1 100k D3 COM LIN DMOD D4 LIN VCC DMOD C4 cdh COM 50n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 44k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 22.25 tol=1 R7 drvln LO 11.2 tol=1 C8 LO COM 1n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 255.5k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 22.25 tol=1 R10 drvhn HO 11.2 tol=1 C10 HO VS 1n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVB C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E1 bias1 COM VCC COM 1 E2 bias2 COM VCC COM 1 C12 cdl COM 50n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 ;BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-{toff}/50.5n)) BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-150n/50.5n)) ;BdlyOn1 oncontl COM V=V(VCC)*EXP(-{ton}/50.25n) BdlyOn1 oncontl COM V=V(VCC)*EXP(-680n/50.25n) ;BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-{toff}/50.5n)) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-150n/50.5n)) ;BdlyOn2 onconth COM V=V(VCC)*EXP(-{ton}/50.25n) BdlyOn2 onconth COM V=V(VCC)*EXP(-680n/50.25n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 R13 hinstb hdelay {Rdelay} C14 hdelay COM {Cdelay} XX14 hinstb ldelayb hino VCC ideal_nor_2 XX16 linstb hdelayb lino VCC ideal_nor_2 R14 linstb ldelay {Rdelay} C15 ldelay COM {Cdelay} XX15 hinst hinstb VCC ideal_inverter XX17 hdelay hdelayb VCC ideal_inverter XX18 linst linstb VCC ideal_inverter XX19 ldelay ldelayb VCC ideal_inverter V1 bias3 COM 5 S9 VS ilhn dlyhn VS SILIMN E3 bias4 VS HO drvhn 1 R15 bias4 dlyhn 10k C16 dlyhn VS 10p S10 ilhp VB dlyhp VS SILIMP E4 bias5 VS drvhp HO 1 R16 bias5 dlyhp 10k C17 dlyhp VS 10p E5 bias6 COM LO drvln 1 R17 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R18 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .param Cdelay=0.001p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 ton=680n toff=150n .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.55 Vh=0.35) .MODEL SHIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) ;.MODEL SILIMN SW(Ron=30.5 Roff=1m Vt=3.6 Vh=0) ;.MODEL SILIMP SW(Ron=49 Roff=1m Vt=4 Vh=0) .MODEL SILIMN SW(Ron=30.5 Roff=1m Vt=3.6 Vh=0.001) .MODEL SILIMP SW(Ron=49 Roff=1m Vt=4 Vh=0.001) .MODEL SUVB SW(Ron=10Meg Roff=1m Vt=5.35 Vh=0.15) .ends dgd2103M .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p ;.model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0) .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW .ends ideal_and_2 .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg) .ends ideal_nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW .ends ideal_inverter ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=10MAR2022 *VERSION=1.0 .subckt dgd2110 LO COM VCC NC NC VS VB HO NC NC VDD HIN SD LIN VSS NC C1 uvvc VSS 10p S1 VSS hinst HIN VSS SLIN C2 hinst VSS 0.01p D1 VSS HIN DMOD D2 HIN VDD DMOD R1 HIN VSS 750k R2 bias1 hinst 100k S2 VSS uvvc VCC VSS SUVCC S3 VSS linst LIN VSS SLIN C3 linst VSS 0.01p R3 LIN VSS 750k R4 linst bias1 100k D3 VSS LIN DMOD D4 LIN VDD DMOD C4 cdh VSS 50n C5 ondlyh VSS 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 543k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 4.2 tol=1 R7 drvln LO 3.77 tol=1 C8 LO COM 0.55n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 273k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 4.2 tol=1 R10 drvhn HO 3.77 tol=1 C10 HO VS 0.55n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVBS C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E1 bias1 VSS VCC VSS 1 E2 bias2 COM VCC COM 1 C12 cdl COM 50n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-160n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-161n/50.5n) BdlyOff2 offconth VSS V=(V(VCC)-V(VCC)*EXP(-160n/50n)) BdlyOn2 onconth VSS V=V(VCC)*EXP(-161n/51n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 R13 hinstb hdelay {Rdelay} C14 hdelay VSS {Cdelay} XX14 hinstb sdown hino VCC ideal_nor_2 XX16 linstb sdown lino VCC ideal_nor_2 R14 linstb ldelay {Rdelay} C15 ldelay VSS {Cdelay} XX15 hinst hinstb VCC ideal_inverter XX17 hdelay hdelayb VCC ideal_inverter XX18 linst linstb VCC ideal_inverter XX19 ldelay ldelayb VCC ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN S13 VSS hdelay hinst VSS SDIN S14 VSS ldelay linst VSS SDIN D13 VSS SD DMOD D14 SD VDD DMOD S15 VSS sdown SD VSS SLIN R15 SD VSS 750k R16 bias1 sdown 100k .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=7.25 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.35 Vh=0.15) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=140n tonT2=140n .MODEL SILIMN SW(Ron=1.8 Roff=1m Vt=7.25 Vh=0.01) .MODEL SILIMP SW(Ron=1.8 Roff=1m Vt=8.25 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .MODEL SUVBS SW(Ron=10Meg Roff=1m Vt=8.4 Vh=0.2) .ends dgd2110 .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=10MAR2022 *VERSION=1.0 .subckt dgd2113 LO COM VCC NC NC VS VB HO NC NC VDD HIN SD LIN VSS NC C1 uvvc VSS 10p S1 VSS hinst HIN VSS SLIN C2 hinst VSS 0.01p D1 VSS HIN DMOD D2 HIN VDD DMOD R1 HIN VSS 750k R2 bias1 hinst 100k S2 VSS uvvc VCC VSS SUVCC S3 VSS linst LIN VSS SLIN C3 linst VSS 0.01p R3 LIN VSS 750k R4 linst bias1 100k D3 VSS LIN DMOD D4 LIN VDD DMOD C4 cdh VSS 50n C5 ondlyh VSS 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 543k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 4.2 tol=1 R7 drvln LO 3.77 tol=1 C8 LO COM 0.55n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 273k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 4.2 tol=1 R10 drvhn HO 3.77 tol=1 C10 HO VS 0.55n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVBS C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E1 bias1 VSS VCC VSS 1 E2 bias2 COM VCC COM 1 C12 cdl COM 50n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-160n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-161n/50.5n) BdlyOff2 offconth VSS V=(V(VCC)-V(VCC)*EXP(-160n/50n)) BdlyOn2 onconth VSS V=V(VCC)*EXP(-161n/51n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 R13 hinstb hdelay {Rdelay} C14 hdelay VSS {Cdelay} XX14 hinstb sdown hino VCC ideal_nor_2 XX16 linstb sdown lino VCC ideal_nor_2 R14 linstb ldelay {Rdelay} C15 ldelay VSS {Cdelay} XX15 hinst hinstb VCC ideal_inverter XX17 hdelay hdelayb VCC ideal_inverter XX18 linst linstb VCC ideal_inverter XX19 ldelay ldelayb VCC ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN S13 VSS hdelay hinst VSS SDIN S14 VSS ldelay linst VSS SDIN D13 VSS SD DMOD D14 SD VDD DMOD S15 VSS sdown SD VSS SLIN R15 SD VSS 750k R16 bias1 sdown 100k .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=525 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=7.25 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.35 Vh=0.15) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=140n tonT2=140n .MODEL SILIMN SW(Ron=1.8 Roff=1m Vt=7.25 Vh=0.01) .MODEL SILIMP SW(Ron=1.8 Roff=1m Vt=8.25 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .MODEL SUVBS SW(Ron=10Meg Roff=1m Vt=8.4 Vh=0.2) .ends dgd2113 .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=29APR2022 *VERSION=1.0 .subckt dgd2117 VCC IN COM NC NC VS HO VB S1 COM hinst IN COM SLIN D1 COM IN DMOD D2 IN VCC DMOD R1 IN COM 0.75Meg R2 bias1 hinst 100k C4 cdh COM 50n C5 ondlyh COM 10p D6 COM VS DMODH D7 VS VB DMOD R8 VB VS 308k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 23.5 tol=1 R10 drvhn HO 11.2 tol=1 C10 HO VS 0.4n D10 VS HO DMOD D11 HO VB DMOD S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator D12 COM VB DMODH E1 bias1 COM VCC COM 1 E2 bias2 COM VCC COM 1 XX6 N001 hino hivc VCC ideal_nand_2 BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-105n/51n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-125n/51.5n) XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 XX14 hinstb hinstb hino VCC ideal_nor_2 XX15 hinst hinstb VCC ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN C1 N001 COM 10p S2 COM N001 VCC COM SUVCC R3 N001 bias1 1k R4 VCC COM 282k .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.4 Vh=0.2) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=105n tonT2=125n .MODEL SILIMN SW(Ron=13.75 Roff=1m Vt=5 Vh=0.01) .MODEL SILIMP SW(Ron=29.25 Roff=1m Vt=5 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .ends dgd2117 .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=29APR2022 *VERSION=1.0 .subckt dgd2118 VCC IN COM NC NC VS HO VB S1 COM hinst IN COM SLIN D1 COM IN DMOD D2 IN VCC DMOD R1 VCC IN 0.75Meg R2 bias1 hinst 100k C4 cdh COM 50n C5 ondlyh COM 10p D6 COM VS DMODH D7 VS VB DMOD R8 VB VS 308k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 23.5 tol=1 R10 drvhn HO 11.2 tol=1 C10 HO VS 0.4n D10 VS HO DMOD D11 HO VB DMOD S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator D12 COM VB DMODH E1 bias1 COM VCC COM 1 E2 bias2 COM VCC COM 1 XX6 N001 hino hivc VCC ideal_nand_2 BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-105n/51n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-125n/51.5n) XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 XX14 hinstb hinstb hino VCC ideal_nor_2 XX15 hinst hinstb VCC ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN C1 N001 COM 10p S2 COM N001 VCC COM SUVCC R3 N001 bias1 1k R4 VCC COM 282k .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=1m Roff=1Meg Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.4 Vh=0.2) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=105n tonT2=125n .MODEL SILIMN SW(Ron=13.75 Roff=1m Vt=5 Vh=0.01) .MODEL SILIMP SW(Ron=29.25 Roff=1m Vt=5 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .ends dgd2118 .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=29MAR2022 *VERSION=1.0 .subckt dgd21814m HIN LIN VSS NC COM LO VCC NC NC NC VS HO VB NC C1 uvvc COM 10p S1 COM hinst HIN COM SLIN C2 hinst COM 0.01p D1 COM HIN DMOD D2 HIN VCC DMOD R1 HIN COM 200k R2 bias1 hinst 100k S2 COM uvvc VCC COM SUVCC S3 COM linst LIN COM SLIN C3 linst COM 0.01p R3 LIN COM 200k R4 linst bias1 100k D3 COM LIN DMOD D4 LIN VCC DMOD C4 cdh COM 50n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 172k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 4 tol=1 R7 drvln LO 2 tol=1 C8 LO COM 3.53n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 247k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 4 tol=2 R10 drvhn HO 2 tol=1 C10 HO VS 3.53n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E1 bias1 COM VCC COM 1 E2 bias2 COM VCC COM 1 C12 cdl COM 50n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-220n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-180n/50.5n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-220n/50n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-180n/51n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 R13 hinstb hdelay {Rdelay} C14 hdelay COM {Cdelay} XX14 hinstb COM hino VCC ideal_nor_2 XX16 linstb COM lino VCC ideal_nor_2 R14 linstb ldelay {Rdelay} C15 ldelay COM {Cdelay} XX15 hinst hinstb VCC ideal_inverter XX17 hdelay hdelayb VCC ideal_inverter XX18 linst linstb VCC ideal_inverter XX19 ldelay ldelayb VCC ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN S13 COM hdelay hinst COM SDIN S14 COM ldelay linst COM SDIN .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.55 Vh=0.35) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=140n tonT2=140n .MODEL SILIMN SW(Ron=4.5 Roff=1m Vt=3 Vh=0.01) .MODEL SILIMP SW(Ron=3.9 Roff=1m Vt=7 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .ends dgd21814m .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=29MAR2022 *VERSION=1.0 .subckt dgd2181m HIN LIN COM LO VCC VS HO VB C1 uvvc COM 10p S1 COM hinst HIN COM SLIN C2 hinst COM 0.01p D1 COM HIN DMOD D2 HIN VCC DMOD R1 HIN COM 200k R2 bias1 hinst 100k S2 COM uvvc VCC COM SUVCC S3 COM linst LIN COM SLIN C3 linst COM 0.01p R3 LIN COM 200k R4 linst bias1 100k D3 COM LIN DMOD D4 LIN VCC DMOD C4 cdh COM 50n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 172k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 4 tol=1 R7 drvln LO 2 tol=1 C8 LO COM 3.53n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 247k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 4 tol=2 R10 drvhn HO 2 tol=1 C10 HO VS 3.53n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E1 bias1 COM VCC COM 1 E2 bias2 COM VCC COM 1 C12 cdl COM 50n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-220n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-180n/50.5n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-220n/50n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-180n/51n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 R13 hinstb hdelay {Rdelay} C14 hdelay COM {Cdelay} XX14 hinstb COM hino VCC ideal_nor_2 XX16 linstb COM lino VCC ideal_nor_2 R14 linstb ldelay {Rdelay} C15 ldelay COM {Cdelay} XX15 hinst hinstb VCC ideal_inverter XX17 hdelay hdelayb VCC ideal_inverter XX18 linst linstb VCC ideal_inverter XX19 ldelay ldelayb VCC ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN S13 COM hdelay hinst COM SDIN S14 COM ldelay linst COM SDIN .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.55 Vh=0.35) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=140n tonT2=140n .MODEL SILIMN SW(Ron=4.5 Roff=1m Vt=3 Vh=0.01) .MODEL SILIMP SW(Ron=3.9 Roff=1m Vt=7 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .ends dgd2181m .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=7JUN2022 *VERSION=1.0 .subckt dgd21844m IN SD VSS DT COM LO VCC NC NC NC VS HO VB NC C1 uvvc VSS 10p S2 VSS uvvc VCC VSS SUVCC C4 cdh VSS 50n C5 ondlyh VSS 10p R11 uvvc bias1 1k XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 S1 VSS hinst IN VSS SLIN C2 hinst VSS 0.01p D1 VSS IN DMOD D2 IN VCC DMOD R1 IN VSS 200k R2 bias1 hinst 100k S3 VSS N001 SD VSS SDIN C3 hinstb VSS 0.01p R3 VCC SD 200k R4 N001 bias1 100k D3 VSS SD DMOD D4 SD VCC DMOD E1 bias1 VSS VCC VSS 1 C14 hdelay VSS {Cdelay} C15 ldelay VSS {Cdelay} XX14 hinst hinstb VCC ideal_inverter XX15 hdelay hdelayb VCC ideal_inverter XX16 hinstb linstb VCC ideal_inverter XX17 ldelay ldelayb VCC ideal_inverter S13 VSS hdelay hinst VSS SDIN S14 VSS ldelay hinstb VSS SDIN DDT1 bias1 N002 DMOD XX18 linstb N001 hdelayb VCC lino ideal_nor_3 XX19 hinstb N001 ldelayb VCC hino ideal_nor_3 F1 bias1 hdelay V1 0.5 F2 bias1 ldelay V1 0.5 V1 N002 DT 0 C6 ondlyl VSS 10p D5 VSS VCC DMOD R5 VCC VSS 10.5k XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator C12 cdl VSS 50n BdlyOff1 offcontl VSS V=(V(VCC)-V(VCC)*EXP(-{170n}/50.5n)) BdlyOn1 oncontl VSS V=V(VCC)*EXP(-{570n}/50n) XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 BdlyOn2 onconth VSS V=V(VCC)*EXP(-{570n}/50n) BdlyOff2 offconth VSS V=(V(VCC)-V(VCC)*EXP(-{170n}/50.5n)) D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 4 tol=1 R7 drvln LO 2 tol=1 C8 LO COM 3.53n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 247k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 4 tol=2 R10 drvhn HO 2 tol=1 C10 HO VS 3.53n D10 VS HO DMOD D11 HO VB DMOD S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 D12 COM VB DMODH E2 bias2 COM VCC COM 1 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 E3 bias4 VS HO drvhn 1 R13 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R14 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R15 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R16 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.55 Vh=0.35) .param Cdelay=22p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=140n tonT2=140n .MODEL SILIMN SW(Ron=4.5 Roff=1m Vt=3 Vh=0.01) .MODEL SILIMP SW(Ron=3.9 Roff=1m Vt=7 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .ends dgd21844m .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter .subckt ideal_nor_3 A B C Vdd Y S1 Y N002 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N002 N001 Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p S4 N001 Vdd Vtrip C switmod S6 0 Y C Vtrip switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_3 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=7JUN022 *VERSION=1.0 .subckt dgd2184m IN SD COM LO VCC VS HO VB C1 uvvc COM 10p S2 COM uvvc VCC COM SUVCC C4 cdh COM 50n C5 ondlyh COM 10p R11 uvvc bias1 1k XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 S1 COM hinst IN COM SLIN C2 hinst COM 0.01p D1 COM IN DMOD D2 IN VCC DMOD R1 IN COM 200k R2 bias1 hinst 100k S3 COM N001 SD COM SDIN C3 hinstb COM 0.01p R3 VCC SD 200k R4 N001 bias1 100k D3 COM SD DMOD D4 SD VCC DMOD E1 bias1 COM VCC COM 1 C14 hdelay COM {Cdelay} C15 ldelay COM {Cdelay} XX14 hinst hinstb VCC ideal_inverter XX15 hdelay hdelayb VCC ideal_inverter XX16 hinstb linstb VCC ideal_inverter XX17 ldelay ldelayb VCC ideal_inverter S13 COM hdelay hinst COM SDIN S14 COM ldelay hinstb COM SDIN DDT1 bias1 N002 DMOD XX18 linstb N001 hdelayb VCC lino ideal_nor_3 XX19 hinstb N001 ldelayb VCC hino ideal_nor_3 F1 bias1 hdelay V1 0.5 F2 bias1 ldelay V1 0.5 V1 N002 COM 0 C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 10.5k XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator C12 cdl COM 50n BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-{170n}/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-{570n}/50n) XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 BdlyOn2 onconth COM V=V(VCC)*EXP(-{570n}/50n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-{170n}/50.5n)) D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 4 tol=1 R7 drvln LO 2 tol=1 C8 LO COM 3.53n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 247k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 4 tol=2 R10 drvhn HO 2 tol=1 C10 HO VS 3.53n D10 VS HO DMOD D11 HO VB DMOD S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 D12 COM VB DMODH E2 bias2 COM VCC COM 1 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 E3 bias4 VS HO drvhn 1 R13 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R14 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R15 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R16 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.55 Vh=0.35) .param Cdelay=22p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=140n tonT2=140n .MODEL SILIMN SW(Ron=4.5 Roff=1m Vt=3 Vh=0.01) .MODEL SILIMP SW(Ron=3.9 Roff=1m Vt=7 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .ends dgd2184m .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter .subckt ideal_nor_3 A B C Vdd Y S1 Y N002 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N002 N001 Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p S4 N001 Vdd Vtrip C switmod S6 0 Y C Vtrip switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_3 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=21OCT2020 *VERSION=1.0 *Simetrix .subckt dgd2190m HIN LIN COM LO VCC VS HO VB C1 uvvc COM 10p S1 COM hinst HIN COM SLIN C2 hinst COM 0.01p D1 COM HIN DMOD D2 HIN VCC DMOD R1 HIN COM 200k R2 bias1 hinst 100k S2 COM uvvc VCC COM SUVCC S3 COM linst LIN COM SLIN C3 linst COM 0.01p R3 LIN COM 200k R4 linst bias1 100k D3 COM LIN DMOD D4 LIN VCC DMOD C4 cdh COM 50n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 360k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 2.5 tol=1 R7 drvln LO 2.1 tol=1 C8 LO COM 3.3n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 345k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 2.5 tol=1 R10 drvhn HO 2.1 tol=1 C10 HO VS 3.3n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E1 bias1 COM VCC COM 1 E2 bias2 COM VCC COM 1 C12 cdl COM 50n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-140n/50.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-140n/50.5n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-140n/50n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-140n/51n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 R13 hinstb hdelay {Rdelay} C14 hdelay COM {Cdelay} XX14 hinstb COM hino VCC ideal_nor_2 XX16 linstb COM lino VCC ideal_nor_2 R14 linstb ldelay {Rdelay} C15 ldelay COM {Cdelay} XX15 hinst hinstb VCC ideal_inverter XX17 hdelay hdelayb VCC ideal_inverter XX18 linst linstb VCC ideal_inverter XX19 ldelay ldelayb VCC ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN S13 COM hdelay hinst COM SDIN S14 COM ldelay linst COM SDIN .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.1 Vh=0.3) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=140n tonT2=140n .MODEL SILIMN SW(Ron=1.2 Roff=1m Vt=9.45 Vh=0.01) .MODEL SILIMP SW(Ron=0.8 Roff=1m Vt=11.25 Vh=0.01) .MODEL SDIN SW(Ron=1m Roff=10Meg Vt=1.5 Vh=0.15) .ends dgd2190m .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DATE=25AUG2020 *VERSION=1.0 .subckt dgd2304 VCC HIN LIN COM LO VS HO VB C1 uvvc COM 10p S1 COM hinst HIN COM SLIN C2 hinst COM 0.01p D1 COM HIN DMOD D2 HIN VCC DMOD R1 HIN COM 1Meg R2 bias1 hinst 100k S2 COM uvvc VCC COM SUVCC S3 COM linst LIN COM SLIN C3 linst COM 0.01p R3 LIN COM 1Meg R4 linst bias1 100k D3 COM LIN DMOD D4 LIN VCC DMOD C4 cdh COM 50n C5 ondlyh COM 10p C6 ondlyl COM 10p D5 COM VCC DMOD R5 VCC COM 59.3k D6 COM VS DMODH D7 VS VB DMOD C7 dlyoutl COM 10p S4 drvlp illp dlyoutl COM SRSTP S5 illn drvln dlyoutl COM SRSTN R6 drvlp LO 22.2 tol=1 R7 drvln LO 11.2 tol=1 C8 LO COM 0.4n D8 COM LO DMOD D9 LO VCC DMOD R8 VB VS 250k C9 onh COM 10p S6 drvhp ilhp onh COM SRSTP S7 ilhn drvhn onh COM SRSTN R9 drvhp HO 22.2 tol=1 R10 drvhn HO 11.2 tol=1 C10 HO VS 0.4n D10 VS HO DMOD D11 HO VB DMOD R11 uvvc bias1 1k S8 COM uvbs VB VS SUVCC C11 uvbs COM 10p R12 uvbs bias2 1k tol=1 XX1 cdh offconth offdlyh VCC ideal_comparator XX2 onconth cdh ondlyh VCC ideal_comparator XX3 cdl offcontl offdlyl VCC ideal_comparator XX4 oncontl cdl ondlyl VCC ideal_comparator D12 COM VB DMODH E1 bias1 COM VCC COM 1 E2 bias2 COM VCC COM 1 C12 cdl COM 50n XX5 lino uvvc lovc VCC ideal_nand_2 XX6 uvvc hino hivc VCC ideal_nand_2 BdlyOff1 offcontl COM V=(V(VCC)-V(VCC)*EXP(-100n/51.5n)) BdlyOn1 oncontl COM V=V(VCC)*EXP(-95n/52n) BdlyOff2 offconth COM V=(V(VCC)-V(VCC)*EXP(-100n/51n)) BdlyOn2 onconth COM V=V(VCC)*EXP(-95n/53n) XX7 lovc cdl VCC ideal_buffercd XX8 hivc cdh VCC ideal_buffercd XX9 ondlyh dlyouth onhrs VCC nor_2 XX10 offdlyh onhrs dlyouth VCC nor_2 XX11 ondlyl dlyoutl onlrs VCC nor_2 XX12 offdlyl onlrs dlyoutl VCC nor_2 C13 dlyouth COM 10p XX13 uvbs dlyouth onh VCC ideal_and_2 R13 hinstb hdelay {Rdelay} C14 hdelay COM {Cdelay} XX14 hinstb ldelayb hino VCC ideal_nor_2 XX16 linstb hdelayb lino VCC ideal_nor_2 R14 linstb ldelay {Rdelay} C15 ldelay COM {Cdelay} XX15 hinst hinstb VCC ideal_inverter XX17 hdelay hdelayb VCC ideal_inverter XX18 linst linstb VCC ideal_inverter XX19 ldelay ldelayb VCC ideal_inverter E3 bias4 VS HO drvhn 1 R17 bias4 dlyhn 10k C16 dlyhn VS 10p E4 bias5 VS drvhp HO 1 R18 bias5 dlyhp 10k C17 dlyhp VS 10p S9 ilhp VB dlyhp VS SILIMP S10 VS ilhn dlyhn VS SILIMN E5 bias6 COM LO drvln 1 R19 bias6 dlyln 10k C18 dlyln COM 10p E6 bias7 COM drvlp LO 1 R20 bias7 dlylp 10k C19 dlylp COM 10p S11 illp VCC dlylp COM SILIMP S12 COM illn dlyln COM SILIMN .MODEL DMOD D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=25 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL DMODH D(IS=1.0e-14 RS=0.01 N=1 EG=1.11 XTI=3 BV=625 IBV=0.0001 CJO=0 VJ=0.75 M=0.333 FC=0.5 TT=0 KF=0 AF=1) .MODEL SRSTN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=1.2) .MODEL SRSTP SW(Ron=1m Roff=10Meg Vt=1.5 Vh=1.2) .MODEL SLIN SW(Ron=10Meg Roff=1m Vt=1.5 Vh=0.15) .MODEL SUVCC SW(Ron=10Meg Roff=1m Vt=8.35 Vh=0.35) .param Cdelay=10p Rdelay=15.3k T1=-40 T2=25 T3=125 V1=10 V2=15 V3=20 toffT2=100n tonT2=95n .MODEL SILIMN SW(Ron=13.75 Roff=1m Vt=5 Vh=0.01) .MODEL SILIMP SW(Ron=29.25 Roff=1m Vt=5 Vh=0.01) .ends dgd2304 .subckt ideal_comparator 1 2 3 VDD S3 3 VDD 1 2 switmod S4 0 3 2 1 switmod .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_comparator .subckt ideal_nand_2 A B Y Vdd S1 Y Vdd Vtrip A switmod S2 N001 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 Y Vdd Vtrip B switmod S5 0 N001 B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_nand_2 .subckt ideal_buffercd A Y Vdd S3 Y Vdd A N001 switmodcd S4 0 Y N001 A switmodcd E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmodcd SW(Ron=1 Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_buffercd .subckt nor_2 A B Y Vdd M1 Y B N001 Vdd PFET l=1u w=100u M2 N001 A Vdd Vdd PFET l=1u w=100u M3 Y B 0 0 NFET l=1u w=50u M4 Y A 0 0 NFET l=1u w=50u .MODEL PFET PMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.6 PHI=0.7 VTO=-0.9 DELTA=0.1 UO=250 ETA=0 THETA=0.1 + KP=40E-6 VMAX=5E4 KAPPA=1 RSH=0 NFS=1E12 TPG=-1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ=0.5 CJSW=300E-12 MJSW=0.5) .MODEL NFET NMOS (LEVEL=3 TOX=200E-10 NSUB=1E17 GAMMA=0.5 PHI=0.7 VTO=0.8 DELTA=3.0 UO=650 ETA=3.0E-6 THETA =0.1 + KP=120E-6 VMAX=1E5 KAPPA=0.3 RSH=0 NFS=1E12 TPG=1 XJ=500E-9 LD=100E-9 CGDO=200E-12 CGSO=200E-12 CGBO=1E-10 + CJ=400E-6 PB=1 MJ= 0.5 CJSW=300E-12 MJSW=0.5) .ends nor_2 .subckt ideal_and_2 A B Y Vdd S1 N001 Vdd Vtrip A switmod S2 N002 N001 A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 N002 B Vtrip switmod S4 Y Vdd Vtrip N001 switmod S6 0 Y N001 Vtrip switmod C1 N001 0 10p C2 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.000001) .ends ideal_and_2 .subckt ideal_nor_2 A B Y Vdd S1 Y N001 Vtrip A switmod S2 0 Y A Vtrip switmod E1 Vtrip 0 Vdd 0 0.5 S3 N001 Vdd Vtrip B switmod S5 0 Y B Vtrip switmod C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_nor_2 .subckt ideal_inverter A Y Vdd S3 Y Vdd N001 A switmod S4 0 Y A N001 switmod E1 N001 0 Vdd 0 0.5 C1 Y 0 10p .model switmod SW(Ron=1m Roff=10Meg Vt=0 Vh=0.00001) .ends ideal_inverter ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** ****************************************************************************************************************************** 500mA PNP ****************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DIMD10A;DI_DIMD10A;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DIMD10A PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** 100mA NPN ****************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DIMD10A;DI_DIMD10A;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DIMD10A NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ****************************************************************************************************************************** * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=16/04/2009 *VERSION=1 * .MODEL DJT4030P PNP IS=5.5e-13 NF=1 ISE=1.3e-13 NE=1.5 BF=360 + VAF=36 IKF=8 ISC=1.1e-13 NC=1.28 BR=55 VAR=6.6 IKR=1.4 RE=9e-3 + RB=300e-3 RC=9e-3 CJE=380e-12 VJE=0.7 MJE=0.4 CJC=111e-12 + VJC=0.4 MJC=0.35 TF=8.5e-10 TR=3.7e-9 XTB=1.6 QUASIMOD=1 + RCO=0.24 GAMMA=6e-10 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=03/08/2010 *VERSION=2 *------connections-------P1=D, P2=G, P3=N/C, P4=C, P5=E, P6=R1, P7=B, P8=S * .SUBCKT DLD101 P1 P2 P4 P5 P6 P7 P8 * *MOSFET model M1 6 2 5 5 Nmod L=1E-6 W=0.2 M2 5 2 5 6 Pmod L=1.5E-6 W=0.15 RG P2 2 7 RIN 2 5 1E9 RD P1 6 Rdmod 0.58 RB P1 7 Rdmod 0.015 RL 6 5 10E9 C1 2 5 10E-12 C2 P1 P2 3E-12 D1 5 7 Dbodymod LS 5 P8 2.0E-9 * *Bipolar model Q1 P4 P7 P5 NPNmod R1 P6 P7 4.7E3 R2 P5 P7 47E3 * .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.7 KP=8.6E-6 RS=.046 NFS=2E12 + KAPPA=0.06 UO=650 IS=6E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=6E15 TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-12 N=1.05 RS=0.045 TRS1=1.5e-3 CJO=39e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=1.7E-5) .MODEL NPNmod NPN (IS=6E-14 NF=1.02 BF=320 IKF=0.3 VAF=80 ISE=5E-14 NE=1.4 NR=1 BR=10 + IKR=0.06 VAR=10 ISC=2E-13 NC=1.3 RC=0.194 RB=0.5 RE=0.245 CJC=6.05E-12 MJC=0.175 VJC=0.4 + CJE=13E-12 MJE=0.36 VJE=0.7 TF=0.4E-9 TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=25 GAMMA=5E-8) .ENDS DLD101 * *$ *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=2/07/2015 *VERSION=1 * .MODEL DLLFSD01LP3 D(IS=30p RS=.6 N=1 BV=105 IBV=0.36m IKF=1u + EG=1.1 ISR=.8n CJO=.5p VJ=0.4 M=0.48 TRS1=0.0001 TT=2n) * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DLPA004;DLPA004;Diodes;Si; 85.0V 0.300A 3.00us DIODES Switching Diodes .MODEL DLPA004 D ( IS=42.4p RS=0.140 BV=85.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=4.32u ) *SRC=DLPA006;DI_DLPA006;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of DLPA006 array .MODEL DI_DLPA006 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *---------- DM3013SFV Spice Model ---------- .SUBCKT DMP3013SFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005437 RS 30 3 0.001 RG 20 2 15.2 CGS 2 3 1.536E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 81.78 KAPPA = 19.32 VTO = -2.222 .MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.656E-011 N = 1.14 RS = 1.587 BV = 32 CJO = 7.357E-010 VJ = 0.8 M = 0.6 TT = 2.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3013SFV Spice Model v1.0M Last Revised 2017/11/27 *---------- DM3018SFK Spice Model ---------- .SUBCKT DMP3018SFK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005131 RS 30 3 0.001 RG 20 2 14.2 CGS 2 3 1.876E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.07 KAPPA = 19.32 VTO = -2.783 .MODEL DCGD D CJO = 1.4E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.674E-010 N = 1.26 RS = 0.0008951 BV = 33 CJO = 8E-010 VJ = 0.6358 M = 0.6 TT = 1.07E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3018SFK Spice Model v1.0M Last Revised 2017/11/27 *---------- DM3018SFV Spice Model ---------- .SUBCKT DMP3018SFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005131 RS 30 3 0.001 RG 20 2 14.2 CGS 2 3 1.876E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.07 KAPPA = 19.32 VTO = -2.783 .MODEL DCGD D CJO = 1.4E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.674E-010 N = 1.26 RS = 0.0008951 BV = 33 CJO = 8E-010 VJ = 0.6358 M = 0.6 TT = 1.07E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3018SFV Spice Model v1.0M Last Revised 2017/11/27 *---------- DM3018SFV Spice Model ---------- .SUBCKT DMP3018SFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005131 RS 30 3 0.001 RG 20 2 14.2 CGS 2 3 1.876E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.07 KAPPA = 19.32 VTO = -2.783 .MODEL DCGD D CJO = 1.4E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.674E-010 N = 1.26 RS = 0.0008951 BV = 33 CJO = 8E-010 VJ = 0.6358 M = 0.6 TT = 1.07E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3018SFV Spice Model v1.0M Last Revised 2017/11/27 *---------- DM3018SFVQ Spice Model ---------- .SUBCKT DMP3018SFVQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0063 RS 30 3 0.001 RG 20 2 24 CGS 2 3 2.012E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.07E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 + VTO = -2.639 TOX = 1E-007 NSUB = 1E+014 KP = 53 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.703E-009 VJ = 0.7204 M = 0.4693 .MODEL DSUB D IS = 2.304E-010 N = 1.252 RS = 0.0009438 BV = 32.37 + CJO = 2.222E-010 VJ = 0.6155 M = 0.7232 TT = 2.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/09/09 *---------- DM3018SSS Spice Model ---------- .SUBCKT DMP3018SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005131 RS 30 3 0.001 RG 20 2 14.2 CGS 2 3 1.876E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.07 KAPPA = 19.32 VTO = -2.783 .MODEL DCGD D CJO = 1.4E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.674E-010 N = 1.26 RS = 0.0008951 BV = 33 CJO = 8E-010 VJ = 0.6358 M = 0.6 TT = 1.07E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3018SSS Spice Model v1.0M Last Revised 2017/11/27 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=9/13/2019 *VERSION=1 *---------- DM8W33AQ Spice Model ---------- .SUBCKT DM8W33AQ 1 2 * TERMINALS: Anode Cathode D1 1 2 D1 R1 1 2 1057E+09 .MODEL D1 D + IS = 2.144n N = 1.476 RS = 55.59u + CJO = 9.515E-9 VJ = 0.777 M = 0.2887 FC = 0.5 + BV = 39.83 IBV = 217.7m .ENDS *Diodes DM8W33AQ Spice Model v1.0 Last Revised 2019/09/13 * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=3/6/2020 *VERSION=1 *---------- DM8W33AQ Spice Model ---------- .SUBCKT DM8W43AQ 1 2 * TERMINALS: Anode Cathode D1 1 2 D1 R1 1 2 985.3E+09 .MODEL D1 D + IS = 2.182n N = 1.476 RS = 227.8u + CJO = 4.747E-9 VJ = 0.777 M = 0.3866 FC = 0.5 + BV = 50.21 IBV = 5u .ENDS *Diodes DM8W43AQ Spice Model v1.0 Last Revised 2020/03/06 * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DMB2227A;DI_DMB2227A_NPN;BJTs NPN; Si; 40.0V 0.600A 410MHz - .MODEL DI_DMB2227A_NPN NPN (IS=9.69f NF=1.00 BF=272 VAF=114 + IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101 + XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=362p TR=60.3n EG=1.12 ) *SRC=DMB2227A;DI_DMB2227A_PNP;BJTs PNP; Si; 60.0V 0.600A 360MHz - .MODEL DI_DMB2227A_PNP NPN (IS=6.60f NF=1.00 BF=151 VAF=139 + IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174 + XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300 + MJC=0.300 TF=416p TR=71.8n EG=1.12 ) *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) *---------- DMC1015UPD Spice Model ---------- *NMOS .SUBCKT DMC1015UPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003806 RS 30 3 0.001 RG 20 2 1.63 CGS 2 3 1.22E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.17E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141 + TOX = 6E-008 NSUB = 1E+016 KP = 99.78 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.283E-009 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.518E-010 N = 1.111 RS = 0.01242 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 TT=1.436E-08 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC1015UPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02073 RS 30 3 0.001 RG 20 2 10.39 CGS 2 3 1.384E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 44.98 KAPPA = 19.32 VTO = -0.9359 .MODEL DCGD D CJO = 7.175E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 6.359E-007 N = 1.663 RS = 0.09391 BV = 20 CJO = 1.769E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC1015UPD Spice Model v1.0M Last Revised 2016/3/23 *---------- DMC1016UPD Spice Model ---------- *NMOS .SUBCKT DMC1016UPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003806 RS 30 3 0.001 RG 20 2 1.63 CGS 2 3 1.22E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.17E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141 + TOX = 6E-008 NSUB = 1E+016 KP = 99.78 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.283E-009 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.518E-010 N = 1.111 RS = 0.01242 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 TT=1.436E-08 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC1016PD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006917 RS 30 3 0.001 RG 20 2 12.02 CGS 2 3 2.686E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199 .MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6 .MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC1016UPD Spice Model v1.0M Last Revised 2016/3/23 *---------- DMC1018UPD Spice Model ---------- *NMOS *---------- DMC1018UPD Spice Model ---------- .SUBCKT DMC1018UPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003806 RS 30 3 0.001 RG 20 2 1.63 CGS 2 3 1.22E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.17E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141 + TOX = 6E-008 NSUB = 1E+016 KP = 99.78 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.283E-009 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.518E-010 N = 1.111 RS = 0.01242 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 TT=1.436E-08 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS *---------- DMC1018UPD Spice Model ---------- .SUBCKT DMC1018UPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01579 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.293E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 .MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1018UPD Spice Model v1.0 Last Revised 2015/12/9 *---------- DMC1018UPDWQ Spice Model ---------- *NMOS .SUBCKT DMC1018UPDWQ_NMOS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0069 RS 30 3 0.0001 RG 20 2 1.64 CGS 2 3 1.092E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.383E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.1 + TOX = 1E-007 NSUB = 1E+014 KP = 220 KAPPA = 0.2 U0 = 400 IS = 0 .MODEL DCGD D CJO = 7.967E-010 VJ = 0.5 M = 0.5697 .MODEL DSUB D IS = 1.1E-009 N = 1.158 RS = 0.0081 BV = 21.47 + CJO = 1.264E-010 VJ = 0.6 M = 0.449 XTI = 0 TT = 7.15E-009 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC1018UPDWQ_PMOS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 0.001 RG 20 2 1.64 CGS 2 3 8.078E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.199E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -1.15 + TOX = 1E-007 NSUB = 1E+014 KP = 38.6 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.094E-010 VJ = 0.5 M = 0.606 .MODEL DSUB D IS = 4.54E-009 N = 1.351 RS = 0.01217 BV = 21.47 + CJO = 2.158E-010 VJ = 0.6 M = 0.8 XTI = 0 TT = 4.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/03/02 *---------- DMC1028UFDB Spice Model ---------- *NMOS .SUBCKT DMC1028UFDB_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01016 RS 30 3 0.001 RG 20 2 4.8 CGS 2 3 6.15E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.955 + TOX = 6E-008 NSUB = 1E+016 KP = 60.27 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 7.098E-010 VJ = 0.6435 M = 0.6 .MODEL DSUB D IS = 9.003E-010 N = 1.119 RS = 0.04018 BV = 50 CJO = 2.22E-010 VJ = 0.3 M = 0.6045 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC1028UFDB_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03888 RS 30 3 0.001 RG 20 2 15 CGS 2 3 5.112E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 17.45 KAPPA = 49.86 VTO = -0.7114 .MODEL DCGD D CJO = 3.238E-010 VJ = 0.6 M = 0.52 .MODEL DSUB D IS = 1.955E-008 N = 1.194 RS = 0.1356 BV = 30 CJO = 1.43E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC1028UFDB Spice Model v1.0 Last Revised 2015/6/1 *---------- DMC1028UVT Spice Model ---------- *NMOS .SUBCKT DMC1028UVT_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01016 RS 30 3 0.001 RG 20 2 4.8 CGS 2 3 6.15E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.955 + TOX = 6E-008 NSUB = 1E+016 KP = 60.27 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 7.098E-010 VJ = 0.6435 M = 0.6 .MODEL DSUB D IS = 9.003E-010 N = 1.119 RS = 0.04018 BV = 50 CJO = 2.22E-010 VJ = 0.3 M = 0.6045 .MODEL DLIM D IS = 0.0001 .ENDS DMC1028UVT_N *PMOS .SUBCKT DMC1028UVT_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03888 RS 30 3 0.001 RG 20 2 15 CGS 2 3 5.112E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 17.45 KAPPA = 49.86 VTO = -0.7114 .MODEL DCGD D CJO = 3.238E-010 VJ = 0.6 M = 0.52 .MODEL DSUB D IS = 1.955E-008 N = 1.194 RS = 0.1356 BV = 30 CJO = 1.43E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMC1028UVT_P *Diodes DMC1028UVT Spice Model v1.0 Last Revised 2015/6/1 *---------- DMC1029UFDB Spice Model ---------- *NMOS .SUBCKT DMC1029UFDB_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01212 RS 30 3 0.001 RG 20 2 1.26 CGS 2 3 7.966E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.842 + TOX = 6E-008 NSUB = 1E+016 KP = 85.31 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.233E-010 VJ = 0.5 M = 0.5671 .MODEL DSUB D IS = 1.415E-009 N = 1.088 RS = 0.04255 BV = 20 CJO = 1E-015 VJ = 0.6 M = 0.6045 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC1029UFDB_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0273 RS 30 3 0.001 RG 20 2 57 CGS 2 3 8.383E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 32.61 KAPPA = 49.86 VTO = -0.9861 .MODEL DCGD D CJO = 7.701E-010 VJ = 0.7998 M = 0.6 .MODEL DSUB D IS = 6.057E-009 N = 1.269 RS = 0.0595 BV = 20 CJO = 3.41E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC1029UFDB Spice Model v1.0 Last Revised 2015/6/1 *---------- DMC1030UFDB Spice Model ---------- *NMOS .SUBCKT DMC1030UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01313 RS 30 3 0.001 RG 20 2 1.63 CGS 2 3 8.902E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7701 + TOX = 6E-008 NSUB = 1E+016 KP = 89.51 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.613E-010 VJ = 0.6179 M = 0.6 .MODEL DSUB D IS = 1.7E-009 N = 1.041 RS = 0.0586 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC1030UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03274 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.966E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844 .MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC1030UFDB Spice Model v1.0M Last Revised 2018/2/1 *---------- DMC1030UFDB Spice Model ---------- *NMOS .SUBCKT DMC1030UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01313 RS 30 3 0.001 RG 20 2 1.63 CGS 2 3 8.902E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7701 + TOX = 6E-008 NSUB = 1E+016 KP = 89.51 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.613E-010 VJ = 0.6179 M = 0.6 .MODEL DSUB D IS = 1.7E-009 N = 1.041 RS = 0.0586 BV = 20 + CJO = 2.066E-015 VJ = 0.7549 M = 0.6 TT = 3.78E-009 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC1030UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03274 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.966E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844 .MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 + CJO = 1.739E-010 VJ = 0.8 M = 0.6 TT = 1.58E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC1030UFDB Spice Model v1.0M Last Revised 2016/1/28 *---------- DMC1030UFDBQ Spice Model ---------- *NMOS .SUBCKT DMC1030UFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01313 RS 30 3 0.001 RG 20 2 1.63 CGS 2 3 8.902E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7701 + TOX = 6E-008 NSUB = 1E+016 KP = 89.51 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.613E-010 VJ = 0.6179 M = 0.6 .MODEL DSUB D IS = 1.7E-009 N = 1.041 RS = 0.0586 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC1030UFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03274 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.966E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844 .MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC1030UFDBQ Spice Model v1.0M Last Revised 2016/1/28 *---------- DMC10H172SSD Spice Model ---------- NMOS .SUBCKT DMC10H172SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1083 RS 30 3 1E-008 RG 20 2 1.37 CGS 2 3 1.07E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 + TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 .MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 .MODEL DLIM D IS = 0.0001 .ENDS PMOS .SUBCKT DMC10H172SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1739 RS 30 3 0.001 RG 20 2 12.5 CGS 2 3 1.213E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 .MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 .MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC10H172SSD Spice Model v1.0 Last Revised 2022/3/21 *---------- DMC10H220LSD Spice Model ---------- NMOS .SUBCKT DMC10H220LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS PMOS SUBCKT DMC10H220LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1739 RS 30 3 0.001 RG 20 2 12.5 CGS 2 3 1.213E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 .MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 .MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC10H220LSD Spice Model v1.0M Last Revised 2021/8/16 *---------- DMC1229UFDB Spice Model ---------- *NMOS .SUBCKT DMC1229UFDB_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01212 RS 30 3 0.001 RG 20 2 1.26 CGS 2 3 7.966E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.842 + TOX = 6E-008 NSUB = 1E+016 KP = 85.31 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.233E-010 VJ = 0.5 M = 0.5671 .MODEL DSUB D IS = 1.415E-009 N = 1.088 RS = 0.04255 BV = 20 CJO = 1E-015 VJ = 0.6 M = 0.6045 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC1229UFDB_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0273 RS 30 3 0.001 RG 20 2 57 D3 20 2 Db D4 2 20 Dc CGS 2 3 8.383E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 32.61 KAPPA = 49.86 VTO = -0.9861 .MODEL DCGD D CJO = 7.701E-010 VJ = 0.7998 M = 0.6 .MODEL DSUB D IS = 6.057E-009 N = 1.269 RS = 0.0595 BV = 20 CJO = 3.41E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .MODEL Db D IS = 5E-009 N = 1.085 RS = 9.5 BV = 10 .MODEL Dc D IS = 5E-009 N = 1.085 RS = 11 BV = 10 .ENDS *Diodes DMC1229UFDB Spice Model v1.0 Last Revised 2018/05/31 *---------- DMC2004DWK Spice Model ---------- *NMOS .SUBCKT DMC2004DWK_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=2E-7 N=2.2 BV=13 .ENDS *PMOS .SUBCKT DMC2004DWK_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=1E-7 N=2.2 BV=12.3 .ENDS *Diodes DMC2004DWK Spice Model v1.0 (ESD added) Last Revised 2012/6/1 *---------- DMC2004LPK Spice Model ---------- *NMOS .SUBCKT DMC2004LPK_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=2E-7 N=2.2 BV=13 .ENDS *PMOS .SUBCKT DMC2004LPK_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=1E-7 N=2.2 BV=12.3 .ENDS *Diodes DMC2004LPK Spice Model v1.0 (ESD added) Last Revised 2012/6/1 *---------- DMC2004VK Spice Model ---------- *NMOS .SUBCKT DMC2004VK_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=2E-7 N=2.2 BV=13 .ENDS *PMOS .SUBCKT DMC2004VK_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=1E-7 N=2.2 BV=12.3 .ENDS *Diodes DMC2004VK Spice Model v1.0 (ESD added) Last Revised 2012/6/1 *---------- DMC2025UFDB Spice Model ---------- *NMOS .SUBCKT DMC2025UFDB_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006207 RS 30 3 0.001 RG 20 2 3.85 CGS 2 3 3.408E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9687 + TOX = 6E-008 NSUB = 1E+016 KP = 30 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.866E-010 VJ = 0.6242 M = 0.6593 .MODEL DSUB D IS = 1.497E-009 N = 1.181 RS = 0.04312 BV = 22.32 + CJO = 2.223E-010 VJ = 0.1759 M = 0.7226 TT = 3.85E-009 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2025UFDB_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.032 RS 30 3 0.001 RG 20 2 26.51 CGS 2 3 5.561E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 16.1 KAPPA = 69.13 VTO = -0.636 .MODEL DCGD D CJO = 5.956E-010 VJ = 0.6 M = 0.6509 .MODEL DSUB D IS = 4E-008 N = 1.081 RS = 0.1279 BV = 21.35 + CJO = 9.65E-011 VJ = 0.6 M = 0.7325 TT = 6.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2025UFDB Spice Model v1.0J Last Revised 2018/05/23 *---------- DMC2025UFDBQ Spice Model ---------- *NMOS .SUBCKT DMC2025UFDBQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006207 RS 30 3 0.001 RG 20 2 3.85 CGS 2 3 3.408E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9687 + TOX = 6E-008 NSUB = 1E+016 KP = 30 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.866E-010 VJ = 0.6242 M = 0.6593 .MODEL DSUB D IS = 1.497E-009 N = 1.181 RS = 0.04312 BV = 22.32 + CJO = 2.223E-010 VJ = 0.1759 M = 0.7226 TT = 3.85E-009 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2025UFDBQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.032 RS 30 3 0.001 RG 20 2 26.51 CGS 2 3 5.561E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 16.1 KAPPA = 69.13 VTO = -0.636 .MODEL DCGD D CJO = 5.956E-010 VJ = 0.6 M = 0.6509 .MODEL DSUB D IS = 4E-008 N = 1.081 RS = 0.1279 BV = 21.35 + CJO = 9.65E-011 VJ = 0.6 M = 0.7325 TT = 6.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2025UFDBQ Spice Model v1.0J Last Revised 2018/05/23 *---------- DMC2038LVT Spice Model ---------- *NMOS .SUBCKT DMC2038LVT_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02716 RS 30 3 0.001 RG 20 2 1.9 CGS 2 3 3.359E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 0.9264 + TOX = 6E-008 NSUB = 1E+017 KP = 48.04 KAPPA = 0.1 U0 = 400 .MODEL DCGD D CJO = 3.417E-010 VJ = 0.2406 M = 0.4472 .MODEL DSUB D IS = 2.969E-010 N = 1.598 RS = 0.02426 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2038LVT_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04586 RS 30 3 0.001 RG 20 2 72 CGS 2 3 5.078E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75 .MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329 .MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25 + CJO = 3.296E-011 VJ = 0.3087 M = 0.4639 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2038LVT_PMOS Spice Model v2.0 Last Revised 2013/8/27 *---------- DMC2038LVTQ Spice Model ---------- *NMOS .SUBCKT DMC2038LVTQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02716 RS 30 3 0.001 RG 20 2 1.9 CGS 2 3 3.359E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 0.9264 + TOX = 6E-008 NSUB = 1E+017 KP = 48.04 KAPPA = 0.1 U0 = 400 .MODEL DCGD D CJO = 3.417E-010 VJ = 0.2406 M = 0.4472 .MODEL DSUB D IS = 2.969E-010 N = 1.598 RS = 0.02426 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2038LVTQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04586 RS 30 3 0.001 RG 20 2 72 CGS 2 3 5.078E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75 .MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329 .MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25 + CJO = 3.296E-011 VJ = 0.3087 M = 0.4639 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v2.0 Last Revised 2013/8/27 *---------- DMC2041UFDB Spice Model ---------- *NMOS .SUBCKT DMC2041UFDB_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01832 RS 30 3 0.001 RG 20 2 14.6 CGS 2 3 6.456E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.065E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 0.7433 + TOX = 6E-008 NSUB = 1E+017 KP = 87.76 KAPPA = 0.1 U0 = 400 .MODEL DCGD D CJO = 3.232E-010 VJ = 0.6271 M = 0.6 .MODEL DSUB D IS = 1E-009 N = 1.682 RS = 2.221E-009 BV = 24.34 + CJO = 4.795E-011 VJ = 0.6 M = 0.6 TT = 3.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2041UFDB_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04027 RS 30 3 0.001 RG 20 2 14.26 CGS 2 3 8.265E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 15.22 KAPPA = 19.32 VTO = -0.8531 .MODEL DCGD D CJO = 4.776E-010 VJ = 0.6 M = 0.6513 .MODEL DSUB D IS = 1.393E-009 N = 1.162 RS = 0.1017 BV = 23.96 + CJO = 9.24E-011 VJ = 0.6003 M = 0.6 TT = 1.18E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2041UFDB Spice Model v1.0 Last Revised 2018/05/11 *---------- DMC2053UFDB Spice Model ---------- .SUBCKT DMC2053UFDB_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMC2053UFDB_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2053UFDB Spice Model v1.0M Last Revised 2020/2/5 *---------- DMC2053UFDBQ Spice Model ---------- .SUBCKT DMC2053UFDBQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMC2053UFDBQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2053UFDBQ Spice Model v1.0M Last Revised 2020/2/5 *---------- DMC2053UVT Spice Model ---------- .SUBCKT DMC2053UVT_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMC2053UVT_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2053UVT Spice Model v1.0M Last Revised 2018/2/5 *---------- DMC2053UVT Spice Model ---------- *NMOS .SUBCKT DMC2053UVT_N D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01961 RS 30 3 0.001 RG 20 2 4.1 D4 2 20 Dc CGS 2 3 3.405E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.85E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8756 + TOX = 6E-008 NSUB = 1E+016 KP = 30 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.818E-009 N = 1.342 RS = 0.02558 BV = 28.53 + CJO = 9E-011 VJ = 0.8 M = 0.6 TT = 2.99E-009 .MODEL DLIM D IS = 0.0001 .MODEL Dc D IS = 1E-0010 N = 0.19 RS = 0.01 BV = 12 .ENDS *PMOS .SUBCKT DMC2053UVT_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.049 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.854E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.35E-010 R1 13 30 1 *---------- DMC2053UVTQ Spice Model ---------- .SUBCKT DMC2053UVTQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMC2053UVTQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2053UVTQ Spice Model v1.0M Last Revised 2019/2/5 *---------- DMC2057UVT Spice Model ---------- .SUBCKT DMC2057UVT_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02224 RS 30 3 0.001 RG 20 2 1.99 CGS 2 3 3.749E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 0.7287 + TOX = 6E-008 NSUB = 1E+017 KP = 36.65 KAPPA = 0.1 U0 = 400 .MODEL DCGD D CJO = 2.22E-010 VJ = 0.6 M = 0.6041 .MODEL DSUB D IS = 3.082E-010 N = 1.566 RS = 0.007478 BV = 24.02 + CJO = 4.795E-011 VJ = 0.6 M = 0.6 TT = 4.165E-009 .MODEL DLIM D + IS = 0.0001 .ENDS .SUBCKT DMC2057UVT_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02949 RS 30 3 0.001 RG 20 2 38.24 CGS 2 3 4.347E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 17.07 KAPPA = 19.32 VTO = -1.013 .MODEL DCGD D CJO = 4.5E-010 VJ = 0.6 M = 0.6482 .MODEL DSUB D IS = 4.727E-010 N = 1.134 RS = 0.1077 BV = 22 CJO = 5.57E-011 VJ = 0.6 M = 0.6588 TT=3.7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2057UVT Spice Model v1.0 Last Revised 2018/04/09 *---------- DMC21D1UDA Spice Model ---------- *NMOS .SUBCKT DMC21D1UDA_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3366 RS 30 3 0.001 RG 20 2 216.8 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 + TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC21D1UDA_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.6562 RS 30 3 0.001 RG 20 2 400 CGS 2 3 2.653E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 .MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 .MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC21D1UDA Spice Model v1.0 Last Revised 2017/5/11 *---------- DMC2400UV Spice Model ---------- *NMOS .SUBCKT DMC2400UV_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2400UV_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2400UV Spice Model v1.0 Last Revised 2014/11/18 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMC2400UVQ Spice Model ---------- *NMOS .SUBCKT DMC2400UVQ_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2400UVQ_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2400UVQ Spice Model v1.0 Last Revised 2022/11/18 *---------- DMC2450UV Spice Model ---------- *NMOS .SUBCKT DMC2450UV_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2445 RS 30 3 1E-008 RG 20 2 68 CGS 2 3 1.832E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.732E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9194 + TOX = 6E-008 NSUB = 1E+016 KP = 4.018 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.036E-011 VJ = 0.1064 M = 0.9082 .MODEL DSUB D IS = 2.332E-010 N = 1.704 RS = 0.05944 BV = 23.5 CJO = 1E-015 VJ = 0.1745 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2450UV_N Spice Model v1.0 Last Revised 2015/9/07 *PMOS .SUBCKT DMC2450UV_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4321 RS 30 3 1E-006 RG 20 2 233 CGS 2 3 4.312E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.512E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9803 KAPPA = 49.86 VTO = -0.7014 .MODEL DCGD D CJO = 2.017E-011 VJ = 0.1 M = 0.2855 .MODEL DSUB D IS = 4.681E-009 N = 1.393 RS = 2.472 BV = 25.39 CJO = 5.699E-012 VJ = 0.1715 M = 0.2462 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2450UV_P Spice Model v1.0 Last Revised 2015/09/7 *---------- DMC25D0UVT Spice Model ---------- *NMOS .SUBCKT DMC25D0UVT_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.5296 RS 30 3 0.08274 RG 20 2 84 CGS 2 3 2.421E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9252 + TOX = 6E-008 NSUB = 1E+016 KP = 1.517 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.033E-011 VJ = 0.2003 M = 0.3 .MODEL DSUB D IS = 1.714E-009 N = 1.454 RS = 0.03011 BV = 35 CJO = 1.259E-011 VJ = 0.6 M = 0.3013 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC25D0UVT_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04181 RS 30 3 0.001 RG 20 2 12.29 CGS 2 3 3.719E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.46E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 9.397 KAPPA = 9.681 VTO = -1.023 .MODEL DCGD D CJO = 3.903E-010 VJ = 0.2566 M = 0.45 .MODEL DSUB D IS = 2.936E-009 N = 1.327 RS = 0.07557 BV = 33 CJO = 1.598E-010 VJ = 0.4699 M = 0.5274 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC25D0UVT Spice Model v1.0 Last Revised 2015/6/4 *---------- DMC25D1UVT Spice Model ---------- *NMOS .SUBCKT DMC25D1UVT_NMOS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.4589 RS 30 3 0.0001 RG 20 2 25.5 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.61E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.95 + TOX = 1E-007 NSUB = 1E+014 KP = 1.6 KAPPA = 0.2 U0 = 400 IS = 0 .MODEL DCGD D CJO = 9E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 2.5E-009 N = 1.258 RS = 0.2351 BV = 25.64 + CJO = 1.74E-011 VJ = 0.6 M = 0.43 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC25D1UVT_PMOS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0135 RS 30 3 0.001 RG 20 2 1746 CGS 2 3 8.2E-012 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -0.85 + TOX = 1E-007 NSUB = 1E+014 KP = 55.6 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.5E-012 VJ = 0.55 M = 0.55 .MODEL DSUB D IS = 8.634E-009 N = 1.28 RS = 0.02 BV = 16.82 + CJO = 1.386E-009 VJ = 0.7 M = 0.5 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/06/08 *---------- DMC2700UDM Spice Model ---------- *NMOS .SUBCKT DMC2700UDM_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2097 RS 30 3 0.001 RG 20 2 155.2 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8699 +TOX = 6E-008 NSUB = 1E+016 KP = 5.296 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.5E-011 VJ = 0.6 M = 0.7342 .MODEL DSUB D IS = 8.403E-009 N = 1.531 RS = 0.4153 BV = 26 CJO = 3.241E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2700UDM_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.309 RS 30 3 0.001 RG 20 2 168.8 CGS 2 3 5.175E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.529 KAPPA = 19.32 VTO = -0.8736 .MODEL DCGD D CJO = 2.322E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.357E-008 N = 1.581 RS = 0.8199 BV = 25 CJO = 1.5E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2700UDM Spice Model v1.0 Last Revised 2018/2/1 *---------- DMC2700UDMQ Spice Model ---------- *NMOS .SUBCKT DMC2700UDMQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2097 RS 30 3 0.001 RG 20 2 155.2 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8699 +TOX = 6E-008 NSUB = 1E+016 KP = 5.296 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.5E-011 VJ = 0.6 M = 0.7342 .MODEL DSUB D IS = 8.403E-009 N = 1.531 RS = 0.4153 BV = 26 CJO = 3.241E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2700UDMQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.309 RS 30 3 0.001 RG 20 2 168.8 CGS 2 3 5.175E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.529 KAPPA = 19.32 VTO = -0.8736 .MODEL DCGD D CJO = 2.322E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.357E-008 N = 1.581 RS = 0.8199 BV = 25 CJO = 1.5E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2700UDMQ Spice Model v1.0 Last Revised 2017/8/9 *---------- DMC2710UDW Spice Model ---------- ****NMOS**** .SUBCKT DMC2710UDW_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS ****PMOS**** .SUBCKT DMC2710UDW_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2710UDW Spice Model v1.0J Last Revised 2018/01/26 *---------- DMC2710UDWQ Spice Model ---------- ****NMOS**** .SUBCKT DMC2710UDWQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS ****PMOS**** .SUBCKT DMC2710UDWQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2710UDWQ Spice Model v1.0J Last Revised 2020/01/26 *---------- DMC2710UV Spice Model ---------- ****NMOS**** .SUBCKT DMC2710UV_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS ****PMOS**** .SUBCKT DMC2710UV_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2710UV Spice Model v1.0J Last Revised 2018/01/26 *---------- DMC2710UVQ Spice Model ---------- ****NMOS**** .SUBCKT DMC2710UVQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS ****PMOS**** .SUBCKT DMC2710UVQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2710UVQ Spice Model v1.0J Last Revised 2022/01/26 *---------- DMC2710UVT Spice Model ---------- ****NMOS**** .SUBCKT DMC2710UVT_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS ****PMOS**** .SUBCKT DMC2710UVT_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2710UVT Spice Model v1.0J Last Revised 2018/01/26 *---------- DMC2990UDJ Spice Model ---------- *NMOS .SUBCKT DMC2990UDJ_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2990UDJ_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.6562 RS 30 3 0.001 RG 20 2 400 CGS 2 3 2.653E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 .MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 .MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 + BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2990UDJ Spice Model v1.0 Last Revised 2012/11/30 *---------- DMC2990UDJQ Spice Model ---------- *NMOS .SUBCKT DMC2990UDJQ_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2990UDJQ_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.6562 RS 30 3 0.001 RG 20 2 400 CGS 2 3 2.653E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 .MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 .MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 + BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2990UDJQ Spice Model v1.0 Last Revised 2016/9/21 *---------- DMC2991UDA Spice Model ---------- *--------------------NMOS-------------------- .SUBCKT DMC2991UDA_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 887.6 CGS 2 3 1.466E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8806 + TOX = 1E-007 NSUB = 1E+015 KP = 2.15 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.719E-012 VJ = 0.785 M = 0.35 .MODEL DSUB D IS = 3.407E-009 N = 1.58 RS = 0.2324 BV = 25.05 + CJO = 3.376E-012 VJ = 0.9 M = 0.3 TT = 8.81E-009 .MODEL DLIM D IS = 0.0001 .ENDS DMC2991UDA_N *--------------------PMOS-------------------- .SUBCKT DMC2991UDA_P 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMC2991UDA_P Diodes Spice Model v1.0J Last Revised 2022/01/31 *---------- DMC2991UDJ Spice Model ---------- *--------------------NMOS-------------------- .SUBCKT DMC2991UDJ_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 887.6 CGS 2 3 1.466E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8806 + TOX = 1E-007 NSUB = 1E+015 KP = 2.15 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.719E-012 VJ = 0.785 M = 0.35 .MODEL DSUB D IS = 3.407E-009 N = 1.58 RS = 0.2324 BV = 25.05 + CJO = 3.376E-012 VJ = 0.9 M = 0.3 TT = 8.81E-009 .MODEL DLIM D IS = 0.0001 .ENDS DMC2991UDJ_N *--------------------PMOS-------------------- .SUBCKT DMC2991UDJ_P 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMC2991UDJ_P Diodes Spice Model v1.0J Last Revised 2020/01/31 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMC2991UDR4 Spice Model ---------- *--------------------NMOS-------------------- .SUBCKT DMC2991UDR4_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 887.6 CGS 2 3 1.466E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8806 + TOX = 1E-007 NSUB = 1E+015 KP = 2.15 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.719E-012 VJ = 0.785 M = 0.35 .MODEL DSUB D IS = 3.407E-009 N = 1.58 RS = 0.2324 BV = 25.05 + CJO = 3.376E-012 VJ = 0.9 M = 0.3 TT = 8.81E-009 .MODEL DLIM D IS = 0.0001 .ENDS DMC2991UDR4_N *--------------------PMOS-------------------- .SUBCKT DMC2991UDR4_P 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMC2991UDR4_P Diodes Spice Model v1.0J Last Revised 2020/01/31 *---------- DMC3016LDV Spice Model ---------- *NMOS .SUBCKT DMC3016LDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3016LDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01336 RS 30 3 0.001 RG 20 2 8.56 CGS 2 3 1.2E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3016LDV Spice Model v1.0M Last Revised 2016/9/7 *---------- DMC3016LNS Spice Model ---------- *NMOS .SUBCKT DMC3016LNS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3016LNS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01336 RS 30 3 0.001 RG 20 2 8.56 CGS 2 3 1.2E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3016LNS Spice Model v1.0M Last Revised 2016/9/7 *---------- DMC3016LSD Spice Model ---------- *NMOS .SUBCKT DMC3016LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3016LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01336 RS 30 3 0.001 RG 20 2 8.56 CGS 2 3 1.2E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3016LSD Spice Model v1.0M Last Revised 2018/2/1 *---------- DMC3018LSD Spice Model ---------- *NMOS .SUBCKT DMC3018LSD_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3018LSD_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3018LSD Spice Model v2.0 Last Revised 2012/8/6 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMC3020UDVW Spice Model ---------- *--------------------NMOS-------------------- .SUBCKT DMC3020UDVW_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01188 RS 30 3 0.0001 RG 20 2 1.5 CGS 2 3 3.42E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.65 + TOX = 1E-007 NSUB = 1E+015 KP = 28.5 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.8E-010 VJ = 0.75 M = 0.485 .MODEL DSUB D IS = 8E-009 N = 1.48 RS = 0.00921 BV = 33.06 + CJO = 3.35E-010 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS DMC3020UDVW_N *--------------------PMOS-------------------- .SUBCKT DMC3020UDVW_P 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.017 RS 30 3 0.001 RG 20 2 10.43 CGS 2 3 6.6E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.1 + TOX = 1E-007 NSUB = 1E+014 KP = 16.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.825E-010 VJ = 0.5 M = 0.48 .MODEL DSUB D IS = 2.5E-009 N = 1.44 RS = 0.0016 BV = 37.32 + CJO = 1.353E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 6.35E-009 .MODEL DLIM D IS = 0.0001 .ENDS DMC3020UDVW_P Diodes Spice Model v1.0J Last Revised 2020/01/31 *---------- DMC3021LK4 Spice Model ---------- *NMOS .SUBCKT DMC3021LK4_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3021LK4_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3021LK4 Spice Model v2.0 Last Revised 2012/8/6 *---------- DMC3021LSD Spice Model ---------- *NMOS .SUBCKT DMC3021LSD_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3021LSD_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3021LSD Spice Model v2.0 Last Revised 2012/8/6 *---------- DMC3021LSDQ Spice Model ---------- *NMOS .SUBCKT DMC3021LSDQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3021LSDQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3021LSD Spice Model v2.0 Last Revised 2018/2/1 *---------- DMC3025LDV Spice Model ---------- *NMOS .SUBCKT DMC3025LDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3025LDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01336 RS 30 3 0.001 RG 20 2 8.56 CGS 2 3 1.2E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3025LDV Spice Model v1.0M Last Revised 2016/9/7 *---------- DMC3025LNS Spice Model ---------- *NMOS .SUBCKT DMC3025LNS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3025LNS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01336 RS 30 3 0.001 RG 20 2 8.56 CGS 2 3 1.2E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3025LNS Spice Model v1.0M Last Revised 2016/9/7 *---------- DMC3025LSD Spice Model ---------- *NMOS .SUBCKT DMC3025LSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3025LSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01769 RS 30 3 0.001 RG 20 2 10.8 CGS 2 3 5.834E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008 + NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877 .MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3025LSD Spice Model v1.0 Last Revised 2013/4/16 *---------- DMC3025LSDQ Spice Model ---------- *NMOS .SUBCKT DMC3025LSDQ_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3025LSDQ_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01769 RS 30 3 0.001 RG 20 2 10.8 CGS 2 3 5.834E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008 + NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877 .MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3025LSDQ Spice Model v1.0 Last Revised 2018/1/3 *---------- DMC3028LSD Spice Model ---------- *NMOS .SUBCKT DMC3028LSD_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0121 RS 30 3 0.001 RG 20 2 2.45 CGS 2 3 5.929E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.863 + TOX = 6E-008 NSUB = 1E+016 KP = 52 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.7 M = 0.65 .MODEL DSUB D IS = 1.511E-011 N = 1.099 RS = 0.01954 BV = 45 CJO = 2.221E-010 VJ = 0.6319 M = 0.7672 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3028LSD_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3028LSD Spice Model v1.0 Last Revised 2015/1/30 *---------- DMC3028LSDX Spice Model ---------- *NMOS .SUBCKT DMC3028LSDX_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0121 RS 30 3 0.001 RG 20 2 2.45 CGS 2 3 5.929E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.863 + TOX = 6E-008 NSUB = 1E+016 KP = 52 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.7 M = 0.65 .MODEL DSUB D IS = 1.511E-011 N = 1.099 RS = 0.01954 BV = 45 CJO = 2.221E-010 VJ = 0.6319 M = 0.7672 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3028LSDX_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3028LSDX Spice Model v1.0 Last Revised 2015/1/30 *---------- DMC3028LSDXQ Spice Model ---------- *NMOS .SUBCKT DMC3028LSDXQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0121 RS 30 3 0.001 RG 20 2 2.45 CGS 2 3 5.929E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.863 + TOX = 6E-008 NSUB = 1E+016 KP = 52 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.7 M = 0.65 .MODEL DSUB D IS = 1.511E-011 N = 1.099 RS = 0.01954 BV = 45 CJO = 2.221E-010 VJ = 0.6319 M = 0.7672 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3028LSDXQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3028LSDXQ Spice Model v1.0 Last Revised 2015/1/30 *---------- DMC3032LFDB Spice Model ---------- *NMOS .SUBCKT DMC3032LFDB_NMOS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0205 RS 30 3 0.0001 RG 20 2 2.17 CGS 2 3 4.5E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.88 + TOX = 1E-007 NSUB = 1E+014 KP = 31 KAPPA = 0.2 U0 = 500 IS = 0 .MODEL DCGD D CJO = 2.65E-010 VJ = 0.7 M = 0.6 .MODEL DSUB D IS = 5E-011 N = 1.245 RS = 0.0094 BV = 35.54 + CJO = 6.54E-011 VJ = 0.6 M = 0.45 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3032LFDB_PMOS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0405 RS 30 3 0.001 RG 20 2 9.08 CGS 2 3 5.31E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 550 VMAX = 1E+005 ETA = 0 VTO = -1.9 + TOX = 1E-007 NSUB = 1E+014 KP = 10.6 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.275E-010 VJ = 0.55 M = 0.45 .MODEL DSUB D IS = 1.034E-009 N = 1.44 RS = 0.016 BV = 35.54 + CJO = 8.03E-011 VJ = 0.7 M = 0.55 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/04/29 *---------- DMC3032LSD Spice Model ---------- *NMOS .SUBCKT DMC3032LSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01735 RS 30 3 0.001 RG 20 2 1.51 CGS 2 3 3.898E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.95E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.5 + TOX = 6E-008 NSUB = 1E+017 KP = 16.9 KAPPA = 9.834 U0 = 400 .MODEL DCGD D CJO = 2.661E-010 VJ = 0.2369 M = 0.408 .MODEL DSUB D IS = 1.445E-010 N = 1.257 RS = 0.01296 BV = 35 + CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3032LSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3032LSD Spice Model v2.0 Last Revised 2012/8/06 *---------- DMC3060LVT Spice Model ---------- *--------------------NMOS-------------------- .SUBCKT DMC3060LVT_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.036 RS 30 3 0.001 RG 20 2 3.18 CGS 2 3 3.824E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.16 + TOX = 6E-008 NSUB = 1E+016 KP = 26 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.608E-010 VJ = 0.1 M = 0.3464 .MODEL DSUB D IS = 2.655E-010 N = 1.306 RS = 0.01611 BV = 33.35 + CJO = 5.276E-011 VJ = 0.1 M = 0.2922 .MODEL DLIM D IS = 0.0001 .ENDS DMC3060LVT_N *--------------------PMOS-------------------- .SUBCKT DMC3060LVT_P 10 20 30 TERMINALS D G S MODEL FORMAT SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 1E-005 RG 20 2 7.22 CGS 2 3 2.998E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 6 KAPPA = 19.32 VTO = -1.38 IS = 0 .MODEL DCGD D CJO = 1.82E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.173E-008 N = 1.645 RS = 0.01267 BV = 35.66 + CJO = 2.948E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMC3060LVT_P Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMC3060LVTQ Spice Model ---------- *--------------------NMOS-------------------- .SUBCKT DMC3060LVTQ_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.036 RS 30 3 0.001 RG 20 2 3.18 CGS 2 3 3.824E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.16 + TOX = 6E-008 NSUB = 1E+016 KP = 26 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.608E-010 VJ = 0.1 M = 0.3464 .MODEL DSUB D IS = 2.655E-010 N = 1.306 RS = 0.01611 BV = 33.35 + CJO = 5.276E-011 VJ = 0.1 M = 0.2922 .MODEL DLIM D IS = 0.0001 .ENDS DMC3060LVTQ_N *--------------------PMOS-------------------- .SUBCKT DMC3060LVTQ_P 10 20 30 TERMINALS D G S MODEL FORMAT SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 1E-005 RG 20 2 7.22 CGS 2 3 2.998E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 6 KAPPA = 19.32 VTO = -1.38 IS = 0 .MODEL DCGD D CJO = 1.82E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.173E-008 N = 1.645 RS = 0.01267 BV = 35.66 + CJO = 2.948E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMC3060LVTQ_P Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMC3061SVT Spice Model ---------- *--------------------NMOS-------------------- .SUBCKT DMC3061SVT_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 0.001 RG 20 2 4.2 CGS 2 3 2.278E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.67E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.389 + TOX = 6E-008 NSUB = 1E+016 KP = 14.4 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.149E-010 VJ = 0.5612 M = 0.4142 .MODEL DSUB D IS = 3.517E-010 N = 1.333 RS = 0.01501 BV = 32.94 + CJO = 5.909E-011 VJ = 0.1 M = 0.2923 .MODEL DLIM D IS = 0.0001 .ENDS DMC3061SVT_N *--------------------PMOS-------------------- .SUBCKT DMC3061SVT_P 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 1E-005 RG 20 2 8.35 CGS 2 3 2.773E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 5.6 KAPPA = 19.32 VTO = -1.8 IS = 0 .MODEL DCGD D CJO = 1.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.142E-010 N = 1.452 RS = 0.01325 BV = 37.66 + CJO = 6E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMC3061SVT_P *Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMC3061SVTQ Spice Model ---------- *--------------------NMOS-------------------- .SUBCKT DMC3061SVTQ_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 0.001 RG 20 2 4.2 CGS 2 3 2.278E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.67E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.389 + TOX = 6E-008 NSUB = 1E+016 KP = 14.4 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.149E-010 VJ = 0.5612 M = 0.4142 .MODEL DSUB D IS = 3.517E-010 N = 1.333 RS = 0.01501 BV = 32.94 + CJO = 5.909E-011 VJ = 0.1 M = 0.2923 .MODEL DLIM D IS = 0.0001 .ENDS DMC3061SVTQ_N *--------------------PMOS-------------------- .SUBCKT DMC3061SVTQ_P 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 1E-005 RG 20 2 8.35 CGS 2 3 2.773E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 5.6 KAPPA = 19.32 VTO = -1.8 IS = 0 .MODEL DCGD D CJO = 1.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.142E-010 N = 1.452 RS = 0.01325 BV = 37.66 + CJO = 6E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMC3061SVTQ_P *Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMC3071LVT Spice Model ---------- .SUBCKT DMC3071LVT_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.023 RS 30 3 0.001 RG 20 2 4.19 CGS 2 3 1.7E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 + DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 16 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.3E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.464E-010 N = 1.379 RS = 0.01314 BV = 31.89 + CJO = 2.166E-011 VJ = 0.8 M = 0.6 TT = 2.13E-009 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMC3071LVT_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04242 RS 30 3 0.001 RG 20 2 53.6 CGS 2 3 2.497E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 4.757 KAPPA = 19.32 VTO = -1.65 .MODEL DCGD D CJO = 5.012E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.656E-009 N = 1.475 RS = 0.01802 BV = 37 + CJO = 4.932E-011 VJ = 0.6 M = 0.6 TT = 4.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3071LVT Spice Model v1.0M Last Revised 2018/04/09 *---------- DMC31D5UDA Spice Model ---------- *NMOS .SUBCKT DMC31D5UDA_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMC31D5UDA_N *Diodes Spice Model(NMOS) v1.0M Last Revised 2018/04/30 *PMOS .SUBCKT DMC31D5UDA_P 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.5 RS 30 3 0.001 RG 20 2 363.8 CGS 2 3 2.077E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5699 KAPPA = 19.32 VTO = -0.739 .MODEL DCGD D CJO = 9.411E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.047E-007 N = 2.719 RS = 0.2187 BV = 39.12 + CJO = 3.631E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMC31D5UDA_P *Diodes Spice Model(PMOS) v1.0J Last Revised 2018/12/20 *---------- DMC31D5UDAQ Spice Model ---------- *NMOS .SUBCKT DMC31D5UDAQ_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMC31D5UDAQ_N *Diodes Spice Model(NMOS) v1.0M Last Revised 2018/04/30 *PMOS .SUBCKT DMC31D5UDAQ_P 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.5 RS 30 3 0.001 RG 20 2 363.8 CGS 2 3 2.077E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5699 KAPPA = 19.32 VTO = -0.739 .MODEL DCGD D CJO = 9.411E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.047E-007 N = 2.719 RS = 0.2187 BV = 39.12 + CJO = 3.631E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMC31D5UDAQ_P *Diodes Spice Model(PMOS) v1.0J Last Revised 2018/12/20 *---------- DMC31D5UDJ Spice Model ---------- *NMOS .SUBCKT DMC31D5UDJ_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.7969 RS 30 3 0.001 RG 20 2 219 CGS 2 3 2.124E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0 VTO = 0.7496 + TOX = 6E-008 NSUB = 1E+016 KP = 1.745 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 1.072E-011 VJ = 0.111 M = 0.4766 .MODEL DSUB D IS = 8.906E-008 N = 1.859 RS = 0.9141 BV = 35 CJO = 1.64E-012 VJ = 0.1 M = 0.1 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC31D5UDJ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.727 RS 30 3 0.001 RG 20 2 389 CGS 2 3 2.041E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.3E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5546 KAPPA = 49.86 VTO = -0.7516 .MODEL DCGD D CJO = 7.862E-012 VJ = 0.2 M = 0.3592 .MODEL DSUB D IS = 2.888E-005 N = 4.275 RS = 4.441E-010 BV = 35 CJO = 2.878E-012 VJ = 0.6 M = 0.2781 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC31D5UDJ Spice Model v1.0 Last Revised 2014/12/5 *---------- DMC3350UDW Spice Model ---------- ****NMOS**** .SUBCKT DMC3350LDW_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1497 RS 30 3 0.0001 RG 20 2 536.9 CGS 2 3 3.198E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.38E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.491 + TOX = 1E-007 NSUB = 1E+014 KP = 1.919 U0 = 639.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.383E-011 VJ = 0.5 M = 0.3776 .MODEL DSUB D IS = 7.404E-011 N = 1.358 RS = 0.05909 BV = 40.95 + CJO = 1.558E-011 VJ = 0.6 M = 0.4071 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS ****PMOS**** .SUBCKT DMC3350LDW_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3350UDW Spice Model v1.0J Last Revised 2024/01/26 *---------- DMC3350UDWQ Spice Model ---------- ****NMOS**** .SUBCKT DMC3350LDWQ_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1497 RS 30 3 0.0001 RG 20 2 536.9 CGS 2 3 3.198E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.38E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.491 + TOX = 1E-007 NSUB = 1E+014 KP = 1.919 U0 = 639.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.383E-011 VJ = 0.5 M = 0.3776 .MODEL DSUB D IS = 7.404E-011 N = 1.358 RS = 0.05909 BV = 40.95 + CJO = 1.558E-011 VJ = 0.6 M = 0.4071 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS ****PMOS**** .SUBCKT DMC3350LDWQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3350UDWQ Spice Model v1.0J Last Revised 2024/01/26 *---------- DMC3400SDW Spice Model ---------- *NMOS .SUBCKT DMC3400SDW_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.08876 RS 30 3 0.001 RG 20 2 91.88 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.728 + TOX = 6E-008 NSUB = 1E+016 KP = 1.286 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.92E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.377E-010 N = 1.449 RS = 0.8337 BV = 30 CJO = 1.5E-011 VJ = 0.6427 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3400SDW_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2004 RS 30 3 0.001 RG 20 2 240.1 CGS 2 3 4.97E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.8889 KAPPA = 19.32 VTO = -1.774 .MODEL DCGD D CJO = 2.466E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.247E-010 N = 1.538 RS = 0.6734 BV = 30 CJO = 2.286E-011 VJ = 0.6656 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3400SDW Spice Model v1.0 Last Revised 2015/8/27 *---------- DMC3401LDW Spice Model ---------- ****NMOS**** .SUBCKT DMC3401LDW_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04 RS 30 3 0.0001 RG 20 2 58.2 CGS 2 3 4.218E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.44 + TOX = 6E-008 NSUB = 1E+016 KP = 1.195 U0 = 250 KAPPA = 10 .MODEL DCGD D CJO = 2.5E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1E-012 N = 1.814 RS = 7.03 BV = 33.9 + CJO = 9.238E-012 VJ = 0.7728 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS ****PMOS**** .SUBCKT DMC3401LDW_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3401LDW Spice Model v1.0J Last Revised 2018/01/14 *---------- DMC3730UFL3 Spice Model ---------- *NMOS .SUBCKT DMC3730UFL3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2286 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8442 + TOX = 6E-008 NSUB = 1E+016 KP = 6.177 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.263E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.909E-009 N = 1.3 RS = 0.4387 BV = 34 CJO = 1E-015 VJ = 0.6 M = 0.7823 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3730UFL3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4982 RS 30 3 0.001 RG 20 2 177.7 CGS 2 3 8.153E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.741 KAPPA = 19.32 VTO = -0.9343 .MODEL DCGD D CJO = 2.569E-011 VJ = 0.6 M = 0.6165 .MODEL DSUB D IS = 4.013E-007 N = 2.187 RS = 0.2665 BV = 38 CJO = 1.212E-011 VJ = 0.71 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3730UFL3 Spice Model v1.0M Last Revised 2016/4/1 *---------- DMC3730UVT Spice Model ---------- *NMOS .SUBCKT DMC3730UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2286 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8442 + TOX = 6E-008 NSUB = 1E+016 KP = 6.177 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.263E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.909E-009 N = 1.3 RS = 0.4387 BV = 34 CJO = 1E-015 VJ = 0.6 M = 0.7823 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3730UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4982 RS 30 3 0.001 RG 20 2 177.7 CGS 2 3 8.153E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.741 KAPPA = 19.32 VTO = -0.9343 .MODEL DCGD D CJO = 2.569E-011 VJ = 0.6 M = 0.6165 .MODEL DSUB D IS = 4.013E-007 N = 2.187 RS = 0.2665 BV = 38 CJO = 1.212E-011 VJ = 0.71 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3730UVT Spice Model v1.0M Last Revised 2018/4/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMC3732UVT Spice Model ---------- .SUBCKT DMC3732UVT_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2289 RS 30 3 0.0001 RG 20 2 44.1 CGS 2 3 5.285E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.24E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.7254 + TOX = 1E-007 NSUB = 4.3E+015 KP = 5.36 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.836E-011 VJ = 0.5 M = 0.4811 .MODEL DSUB D IS = 6E-011 N = 1.43 RS = 0.0033 BV = 34.28 + CJO = 1.351E-011 VJ = 0.6 M = 0.396 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMC3732UVT_P D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/09 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMC3732UVTQ Spice Model ---------- .SUBCKT DMC3732UVTQ_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2289 RS 30 3 0.0001 RG 20 2 44.1 CGS 2 3 5.285E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.24E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.7254 + TOX = 1E-007 NSUB = 4.3E+015 KP = 5.36 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.836E-011 VJ = 0.5 M = 0.4811 .MODEL DSUB D IS = 6E-011 N = 1.43 RS = 0.0033 BV = 34.28 + CJO = 1.351E-011 VJ = 0.6 M = 0.396 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMC3732UVTQ_P D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/09 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMC4015SSD Spice Model ---------- *NMOS .SUBCKT DMC4015SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005483 RS 30 3 0.001 RG 20 2 1.64 CGS 2 3 1.736E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.274 + TOX = 6E-008 NSUB = 1E+017 KP = 95.33 KAPPA = 24.52 U0 = 400 .MODEL DCGD D CJO = 8.624E-010 VJ = 0.3663 M = 0.4967 .MODEL DSUB D IS = 2.495E-010 N = 1.227 RS = 0.003519 + BV = 45 CJO = 7.592E-010 VJ = 0.3012 M = 0.5211 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC4015SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4015SSD Spice Model v1.0M Last Revised 2017/2/21 *---------- DMNC4028SSD Spice Model ---------- ************************************************************************************** * NMOS .SUBCKT DMC4028SSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008754 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 + TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS ********************************************************************************V * PMOS .SUBCKT DMC4028SSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0269 RS 30 3 0.001 RG 20 2 12.6 CGS 2 3 1.121E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 .MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4028SSD Spice Model v1.0 Last Revised 2018/2/21 *---------- DMC4029SK4 Spice Model ---------- ************************************************************************************** * NMOS .SUBCKT DMC4029SK4_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008754 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 + TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS ********************************************************************************V * PMOS .SUBCKT DMC4029SK4_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0269 RS 30 3 0.001 RG 20 2 12.6 CGS 2 3 1.121E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 .MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4029SK4 Spice Model v1.0M Last Revised 2016/6/14 *---------- DMC4029SSD Spice Model ---------- ************************************************************************************** * NMOS .SUBCKT DMC4029SSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008754 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 + TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS ********************************************************************************V * PMOS .SUBCKT DMC4029SSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0269 RS 30 3 0.001 RG 20 2 12.6 CGS 2 3 1.121E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 .MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4029SSD Spice Model v1.0 Last Revised 2014/2/5 *---------- DMC4040SSD Spice Model ---------- *NMOS .SUBCKT DMC4040SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01247 RS 30 3 0.001 RG 20 2 1.29 CGS 2 3 1.225E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378 + TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6 M = 0.7823 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC4040SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4040SSD Spice Model v1.0M Last Revised 2018/2/1 *---------- DMC4040SSDQ Spice Model ---------- *NMOS .SUBCKT DMC4040SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01247 RS 30 3 0.001 RG 20 2 1.29 CGS 2 3 1.225E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378 + TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6 M = 0.7823 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC4040SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4040SSDQ Spice Model v1.0M Last Revised 2016/5/6 *---------- DMNC4047LSD Spice Model ---------- ************************************************************************************** * NMOS .SUBCKT DMC4047LSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008754 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 + TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS ********************************************************************************V * PMOS .SUBCKT DMC4047LSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0269 RS 30 3 0.001 RG 20 2 12.6 CGS 2 3 1.121E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 .MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4047LSD Spice Model v1.0 Last Revised 2018/2/21 *---------- DMC4050SSD Spice Model ---------- *NMOS .SUBCKT DMC4050SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01247 RS 30 3 0.001 RG 20 2 1.29 CGS 2 3 1.225E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378 + TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6 M = 0.7823 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC4050SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4050SSD Spice Model v1.0M Last Revised 2018/2/1 *---------- DMC4050SSDQ Spice Model ---------- *NMOS .SUBCKT DMC4050SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01247 RS 30 3 0.001 RG 20 2 1.29 CGS 2 3 1.225E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378 + TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6 M = 0.7823 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC4050SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4050SSDQ Spice Model v1.0M Last Revised 2016/4/1 *---------- DMC6022SSD Spice Model ---------- NMOS .SUBCKT DMC6022SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01507 RS 30 3 0.001 RG 20 2 1.95 CGS 2 3 1.906E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.91 + TOX = 6E-008 NSUB = 1E+016 KP = 27.65 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.087E-010 VJ = 0.6996 M = 0.6 .MODEL DSUB D IS = 2.295E-010 N = 1.289 RS = 0.003381 BV = 67 CJO = 3.016E-010 VJ = 0.6 M = 0.6 TT=9E-09 .MODEL DLIM D IS = 0.0001 .ENDS PMOS .SUBCKT DMC6022SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC6022SSD Spice Model v1.0M Last Revised 2019/3/22 *---------- DMC6040SSD Spice Model ---------- *NMOS .SUBCKT DMC6040SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03016 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 1.107E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.359 + TOX = 6E-008 NSUB = 1E+016 KP = 58.33 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.99E-010 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 2.23E-010 N = 1.26 RS = 0.006689 BV = 67 CJO = 2.221E-010 VJ = 0.6969 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC6040SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0844 RS 30 3 0.001 RG 20 2 13.61 CGS 2 3 1.079E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 14.83 KAPPA = 19.32 VTO = -1.879 .MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.531E-010 N = 1.296 RS = 0.01283 BV = 67 CJO = 2.66E-011 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6040SSD Spice Model v1.0M Last Revised 2018/2/1 *---------- DMC6040SSDQ Spice Model ---------- *NMOS .SUBCKT DMC6040SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03016 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 1.107E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.359 + TOX = 6E-008 NSUB = 1E+016 KP = 58.33 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.99E-010 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 2.23E-010 N = 1.26 RS = 0.006689 BV = 67 CJO = 2.221E-010 VJ = 0.6969 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC6040SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0844 RS 30 3 0.001 RG 20 2 13.61 CGS 2 3 1.079E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 14.83 KAPPA = 19.32 VTO = -1.879 .MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.531E-010 N = 1.296 RS = 0.01283 BV = 67 CJO = 2.66E-011 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6040SSDQ Spice Model v1.0M Last Revised 2016/5/3 *---------- DMC62D0SVQ Spice Model ---------- *NMOS .SUBCKT DMN62D0SVQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC62D0SVQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.963 RS 30 3 0.001 RG 20 2 193.6 CGS 2 3 2.418E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3524 KAPPA = 19.32 VTO = -1.171 .MODEL DCGD D CJO = 1.313E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.371E-009 N = 1.757 RS = 0.2273 BV = 75 CJO = 1.91E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC62D0SVQ Spice Model v1.0M Last Revised 2017/11/30 *---------- DMC62D2SV_NMOS Spice Model ---------- .SUBCKT DMC62D2SV_NMOS D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.87 RS 30 3 0.0001 RG 20 2 146.4 CGS 2 3 4.431E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.535E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 21 .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.681 + TOX = 1E-007 NSUB = 9.974E+015 KP = 1.05 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.861E-012 VJ = 0.5 M = 0.3886 .MODEL DSUB D IS = 3.5E-011 N = 1.333 RS = 0.1033 BV = 76.93 + CJO = 1.93E-011 VJ = 0.6 M = 0.4466 XTI = 0 TT = 9.215E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/08 *---------- DMC62D2SV_PMOS Spice Model ---------- .SUBCKT DMC62D2SV_PMOS D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.054 RS 30 3 0.0001 RG 20 2 234.9 CGS 2 3 3.232E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.54E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+016 KP = 1 KAPPA = 0.2 VTO = -1.631 .MODEL DCGD D CJO = 1.6E-011 VJ = 0.6 M = 0.468 .MODEL DSUB D IS = 4.3E-010 N = 1.611 RS = 0.1045 BV = 76.39 + CJO = 9E-012 VJ = 0.7797 M = 0.3 XTI = 0 TT = 1.341E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/07 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMC62D2SVQ_NMOS Spice Model ---------- .SUBCKT DMC62D2SVQ_NMOS D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.87 RS 30 3 0.0001 RG 20 2 146.4 CGS 2 3 4.431E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.535E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 21 .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.681 + TOX = 1E-007 NSUB = 9.974E+015 KP = 1.05 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.861E-012 VJ = 0.5 M = 0.3886 .MODEL DSUB D IS = 3.5E-011 N = 1.333 RS = 0.1033 BV = 76.93 + CJO = 1.93E-011 VJ = 0.6 M = 0.4466 XTI = 0 TT = 9.215E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/08 *---------- DMC62D2SVQ_PMOS Spice Model ---------- .SUBCKT DMC62D2SVQ_PMOS D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.054 RS 30 3 0.0001 RG 20 2 234.9 CGS 2 3 3.232E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.54E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+016 KP = 1 KAPPA = 0.2 VTO = -1.631 .MODEL DCGD D CJO = 1.6E-011 VJ = 0.6 M = 0.468 .MODEL DSUB D IS = 4.3E-010 N = 1.611 RS = 0.1045 BV = 76.39 + CJO = 9E-012 VJ = 0.7797 M = 0.3 XTI = 0 TT = 1.341E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/07 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMC67D8UFDBQ Spice Model ---------- *NMOS SUBCKT DMC67D8UFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.63 RS 30 3 0.001 RG 20 2 900.9 CGS 2 3 3.933E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.084 + TOX = 6E-008 NSUB = 1E+016 KP = 1.27 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.483E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.945E-010 N = 1.613 RS = 0.07371 BV = 76.92 + CJO = 2.987E-011 VJ = 0.8 M = 0.6 TT = 1.04E-008 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC67D8UFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 57.4m RS 30 3 4.07m RG 20 2 50.0 CGS 2 3 342p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 966p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.80m VTO=-1.25 KP=44.2 .MODEL DCGD D (CJO=966p VJ=0.600 M=0.680 .MODEL DSUB D (IS=12.5n N=1.50 RS=0.170 BV=20.0 + CJO=230p VJ=0.800 M=0.420 TT=196n .MODEL DLIM D (IS=100U) .ENDS *Diodes DMC67D8UFDBQ Spice Model v1.0 Last Revised 2019/6/6 *SYM=POWMOSN .SUBCKT DMG1012T D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=47.66m RD 10 1 220m RS 30 3 80m CGS 20 3 57p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16 .MODEL DCGD D CJO=27p VJ=80m M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *SYM=POWMOSN .SUBCKT DMG1012T D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=47.66m RD 10 1 220m RS 30 3 80m CGS 20 3 57p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16 .MODEL DCGD D CJO=27p VJ=80m M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *SYM=POWMOSN .SUBCKT DMG1012T D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=47.66m RD 10 1 220m RS 30 3 80m CGS 20 3 57p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16 .MODEL DCGD D CJO=27p VJ=80m M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *---------- DMG1012UW Spice Model ---------- .SUBCKT DMG1012UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1379 RS 30 3 0.001 RG 20 2 173.69 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9495 + TOX = 6E-008 NSUB = 1E+016 KP = 5.129 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.8E-011 VJ = 0.6 M = 0.7528 .MODEL DSUB D IS = 2.319E-010 N = 1.641 RS = 0.1327 BV = 26 CJO = 2E-011 VJ = 0.7125 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1012UW Spice Model v1.0M Last Revised 2017/8/22 *---------- DMG1012UWQ Spice Model ---------- .SUBCKT DMG1012UWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1012UWQ Spice Model v1.0J Last Revised 2020/01/26 *SYM=POWMOSP .SUBCKT DMG1013T 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=47.66m RD 10 1 300m RS 30 3 85m RG 20 2 1 CGS 2 3 57.55p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16 .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0 + CJO=20p VJ=0.600 M=0.50 .MODEL DLIM D IS=100U .ENDS *---------- DMG1013TQ Spice Model ---------- .SUBCKT DMG1013TQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2935 RS 30 3 0.001 RG 20 2 161.7 CGS 2 3 5.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8938 + TOX = 6E-008 NSUB = 1E+016 KP = 1.666 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.045E-011 VJ = 0.7992 M = 0.6 .MODEL DSUB D IS = 5.645E-009 N = 1.473 RS = 0.9179 BV = 23.7 CJO = 2.5E-011 VJ = 0.7186 M = 0.6022 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1013TQ Spice Model v1.0M Last Revised 2016/8/3 *SYM=POWMOSP .SUBCKT DMG1013UW 10 20 30 * TERMINALS: D G S M1 1 20 3 3 PMOS L=0.6U W=47.66m RD 10 1 300m RS 30 3 85m CGS 20 3 57.55p EGD 12 30 20 1 1 VFB 14 30 0 FFB 20 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16 .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0 + CJO=20p VJ=0.600 M=0.50 .MODEL DLIM D IS=100U .ENDS *Diodes DMG1013UW Spice Model v1.0 Last Revised 2014/6/17 *SYM=POWMOSP .SUBCKT DMG1013UWQ 10 20 30 * TERMINALS: D G S M1 1 20 3 3 PMOS L=0.6U W=47.66m RD 10 1 300m RS 30 3 85m CGS 20 3 57.55p EGD 12 30 20 1 1 VFB 14 30 0 FFB 20 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16 .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0 + CJO=20p VJ=0.600 M=0.50 .MODEL DLIM D IS=100U .ENDS *Diodes DMG1013UWQ Spice Model v1.0 Last Revised 2016/01/13 *N-CH .SUBCKT DMG1016VN D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=57.5m RD 10 1 240m RS 30 3 60m RG 20 2 93 CGS 2 3 57p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17 ********************************************* .MODEL DCGD D CJO=27p VJ=80m M=0.320 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VN *P-CH .SUBCKT DMG1016VP D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=41m RD 10 1 300m RS 30 3 75m RG 20 2 150 CGS 2 3 54.55p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB ********************************************* .MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17 ********************************************* .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=20p VJ=0.600 M=0.350 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VP *N-CH .SUBCKT DMG1016VN D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=57.5m RD 10 1 240m RS 30 3 60m RG 20 2 93 CGS 2 3 57p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17 ********************************************* .MODEL DCGD D CJO=27p VJ=80m M=0.320 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VN *P-CH .SUBCKT DMG1016VP D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=41m RD 10 1 300m RS 30 3 75m RG 20 2 150 CGS 2 3 54.55p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB ********************************************* .MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17 ********************************************* .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=20p VJ=0.600 M=0.350 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VP *N-CH .SUBCKT DMG1016VQ D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=57.5m RD 10 1 240m RS 30 3 60m RG 20 2 93 CGS 2 3 57p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17 ********************************************* .MODEL DCGD D CJO=27p VJ=80m M=0.320 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VN *P-CH .SUBCKT DMG1016VP D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=41m RD 10 1 300m RS 30 3 75m RG 20 2 150 CGS 2 3 54.55p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB ********************************************* .MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17 ********************************************* .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=20p VJ=0.600 M=0.350 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VQ *---------- DMG1023UV Spice Model ---------- .SUBCKT DMG1023UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.3494 RS 30 3 0.001 RG 20 2 147 CGS 2 3 5.502E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 4E+004 KP = 1.814 + ETA = 0.0001 TOX = 2E-008 NSUB = 1E+015 KAPPA = 0.3557 VTO = -0.8709 .MODEL DCGD D CJO = 2.616E-011 VJ = 0.127 M = 0.3001 .MODEL DSUB D IS = 1.524E-009 N = 1.789 RS = 0.1462 BV = 22 CJO = 1.689E-011 VJ = 0.3791 M = 0.2844 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1023UV Spice Model v1.0 Last Revised 2010/10/4 *---------- DMG1023UVQ Spice Model ---------- .SUBCKT DMG1023UVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.3494 RS 30 3 0.001 RG 20 2 147 CGS 2 3 5.502E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 4E+004 KP = 1.814 + ETA = 0.0001 TOX = 2E-008 NSUB = 1E+015 KAPPA = 0.3557 VTO = -0.8709 .MODEL DCGD D CJO = 2.616E-011 VJ = 0.127 M = 0.3001 .MODEL DSUB D IS = 1.524E-009 N = 1.789 RS = 0.1462 BV = 22 CJO = 1.689E-011 VJ = 0.3791 M = 0.2844 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1023UVQ Spice Model v1.0 Last Revised 2018/10/4 *---------- DMG1024UV Spice Model ---------- .SUBCKT DMG1024UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2635 RS 30 3 0.001 RG 20 2 93 CGS 2 3 5.63E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.147E+004 ETA = 0.00355 VTO = 0.9014 + TOX = 1.68E-008 NSUB = 3.755E+015 KP = 4.794 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.806E-011 VJ = 0.04974 M = 0.2926 .MODEL DSUB D IS = 2.941E-010 N = 1.586 RS = 0.07503 BV = 22 CJO = 1.491E-011 VJ = 0.219 M = 0.277 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1024UV Spice Model v1.0 Last Revised 2010/10/4 *---------- DMG1026UV Spice Model ---------- .SUBCKT DMG1026UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.188 RS 30 3 0.001 RG 20 2 127.7 CGS 2 3 3.079E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.099 + TOX = 6E-008 NSUB = 1E+017 KP = 1.832 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 1.712E-011 VJ = 0.6 M = 0.5004 .MODEL DSUB D IS = 7.2E-007 N = 2.594 RS = 0.03889 + BV = 35 CJO = 4.301E-012 VJ = 0.2 M = 0.1735 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1026UV Spice Model v1.0 Last Revised 2014/6/6 *---------- DMG1026UVQ Spice Model ---------- .SUBCKT DMG1026UVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.188 RS 30 3 0.001 RG 20 2 127.7 CGS 2 3 3.079E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.099 + TOX = 6E-008 NSUB = 1E+017 KP = 1.832 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 1.712E-011 VJ = 0.6 M = 0.5004 .MODEL DSUB D IS = 7.2E-007 N = 2.594 RS = 0.03889 + BV = 35 CJO = 4.301E-012 VJ = 0.2 M = 0.1735 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1026UVQ Spice Model v1.0 Last Revised 2021/03/23 *---------- DMG1026UVQ Spice Model ---------- .SUBCKT DMG1026UVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.188 RS 30 3 0.001 RG 20 2 127.7 CGS 2 3 3.079E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.099 + TOX = 6E-008 NSUB = 1E+017 KP = 1.832 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 1.712E-011 VJ = 0.6 M = 0.5004 .MODEL DSUB D IS = 7.2E-007 N = 2.594 RS = 0.03889 + BV = 35 CJO = 4.301E-012 VJ = 0.2 M = 0.1735 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1026UVQ Spice Model v1.0 Last Revised 2021/03/23 *---------- DMG1029SV Spice Model ---------- *NMOS .SUBCKT DMG1029SV_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.009081 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMG1029SV_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.072 RS 30 3 0.001 RG 20 2 50 CGS 2 3 2.301E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 .MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 .MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 65 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1029SV Spice Model v1.0 Last Revised 2012/4/17 *---------- DMG10N60SCT Spice Model ---------- .SUBCKT DMG10N60SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.5888 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.548E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.606 + TOX = 6E-008 NSUB = 1E+016 KP = 3.779 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1E-009 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.227E-010 N = 1.213 RS = 0.01007 BV = 694 CJO = 1.726E-009 VJ = 0.6787 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG10N60SCT Spice Model v1.0M Last Revised 2016/12/5 *---------- DMG2301L Spice Model ---------- .SUBCKT DMG2301L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.08416 RS 30 3 0.001 RG 20 2 40.9 CGS 2 3 1.265E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 6.629 KAPPA = 19.32 VTO = -0.6459 .MODEL DCGD D CJO = 1.177E-010 VJ = 0.611 M = 0.6 .MODEL DSUB D IS = 0.0001419 N = 4.041 RS = 7.253E-009 BV = 22 CJO = 2.853E-011 VJ = 0.7195 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2301L Spice Model v1.0M Last Revised 2018/2/1 *---------- DMG2301LK Spice Model ---------- .SUBCKT DMG2301LK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.08416 RS 30 3 0.001 RG 20 2 40.9 CGS 2 3 1.265E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 6.629 KAPPA = 19.32 VTO = -0.6459 .MODEL DCGD D CJO = 1.177E-010 VJ = 0.611 M = 0.6 .MODEL DSUB D IS = 0.0001419 N = 4.041 RS = 7.253E-009 BV = 22 CJO = 2.853E-011 VJ = 0.7195 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2301LK Spice Model v1.0M Last Revised 2016/4/28 *SYM=POWMOSP .SUBCKT DMG2301U D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=0.4 RD 10 1 60m RS 30 3 15m RG 20 2 44.9 CGS 2 3 560p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 258p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k + ETA=0.1m VTO=-1.0 TOX=16.8n NSUB=5.36e16 .MODEL DCGD D CJO=298p VJ=0.50 M=0.550 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.500 M=0.650 .MODEL DLIM D IS=100U .ENDS *---------- DMG3420U Spice Model ---------- .SUBCKT DMG3420U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3420U Spice Model v1.0 Last Revised 2010/5/9 *---------- DMG2302UK Spice Model ---------- .SUBCKT DMG2302UK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02745 RS 30 3 0.001 RG 20 2 2.64 CGS 2 3 1E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6118 + TOX = 6E-008 NSUB = 1E+016 KP = 11.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.358E-011 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 4.844E-007 N = 1.983 RS = 0.05975 BV = 20 CJO = 8E-011 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2302UK Spice Model v1.0 Last Revised 2016/1/22 *---------- DMG2302UKQ Spice Model ---------- .SUBCKT DMG2302UKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02745 RS 30 3 0.001 RG 20 2 2.64 CGS 2 3 1E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6118 + TOX = 6E-008 NSUB = 1E+016 KP = 11.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.358E-011 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 4.844E-007 N = 1.983 RS = 0.05975 BV = 20 CJO = 8E-011 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2302UKQ Spice Model v1.0 Last Revised 2016/1/22 *---------- DMG2302UQ Spice Model ---------- .SUBCKT DMG2302UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02745 RS 30 3 0.001 RG 20 2 2.64 CGS 2 3 1E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6118 + TOX = 6E-008 NSUB = 1E+016 KP = 11.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.358E-011 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 4.844E-007 N = 1.983 RS = 0.05975 BV = 20 CJO = 8E-011 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2302UQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMG2305UX Spice Model ---------- .SUBCKT DMG2305UX 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02969 RS 30 3 0.001 RG 20 2 15.2 CGS 2 3 7.613E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.28E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.49 KAPPA = 65.74 VTO = -0.8201 .MODEL DCGD D CJO = 5.79E-010 VJ = 0.2973 M = 0.5774 .MODEL DSUB D IS = 3.162E-009 N = 1.241 RS = 0.08353 BV = 1E+006 CJO = 5.653E-011 VJ = 0.008286 M = 0.1128 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2305UX Spice Model v1.0 Last Revised 2013/10/22 *---------- DMG2305UXQ Spice Model ---------- .SUBCKT DMG2305UXQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02969 RS 30 3 0.001 RG 20 2 15.2 CGS 2 3 7.613E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.28E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.49 KAPPA = 65.74 VTO = -0.8201 .MODEL DCGD D CJO = 5.79E-010 VJ = 0.2973 M = 0.5774 .MODEL DSUB D IS = 3.162E-009 N = 1.241 RS = 0.08353 BV = 1E+006 CJO = 5.653E-011 VJ = 0.008286 M = 0.1128 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2305UXQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMG2307L Spice Model ---------- .SUBCKT DMG2307L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04307 RS 30 3 0.001 RG 20 2 17.1 CGS 2 3 3.339E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.459 KAPPA = 9.123 VTO = -1.527 .MODEL DCGD D CJO = 1.701E-010 VJ = 0.4656 M = 0.372 .MODEL DSUB D IS = 5E-010 N = 1.421 RS = 0.05533 BV = 33 CJO = 2.821E-011 VJ = 0.5166 M = 0.4868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2307L Spice Model v1.0 Last Revised 2011/10/28 *---------- DMG2307LQ Spice Model ---------- .SUBCKT DMG2307LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04307 RS 30 3 0.001 RG 20 2 17.1 CGS 2 3 3.339E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.459 KAPPA = 9.123 VTO = -1.527 .MODEL DCGD D CJO = 1.701E-010 VJ = 0.4656 M = 0.372 .MODEL DSUB D IS = 5E-010 N = 1.421 RS = 0.05533 BV = 33 CJO = 2.821E-011 VJ = 0.5166 M = 0.4868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2307LQ Spice Model v1.0 Last Revised 2011/10/28 *---------- DMG301NU Spice Model ---------- .SUBCKT DMG301NU 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.5296 RS 30 3 0.08274 RG 20 2 84 CGS 2 3 2.421E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9252 + TOX = 6E-008 NSUB = 1E+016 KP = 1.517 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.033E-011 VJ = 0.2003 M = 0.3 .MODEL DSUB D IS = 1.714E-009 N = 1.454 RS = 0.03011 BV = 35 CJO = 1.259E-011 VJ = 0.6 M = 0.3013 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG301NU Spice Model v1.0 Last Revised 2015/6/4 *---------- DMG302PU Spice Model ---------- .SUBCKT DMG302PU 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.093 RS 30 3 0.001 RG 20 2 1970 CGS 2 3 2.534E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4462 KAPPA = 49.86 VTO = -0.8635 .MODEL DCGD D CJO = 4.312E-012 VJ = 0.1388 M = 0.2172 .MODEL DSUB D IS = 3.518E-010 N = 1.34 RS = 0.5434 BV = 40 CJO = 1.22E-011 VJ = 0.6489 M = 0.363 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG302PU Spice Model v1.0 Last Revised 2015/3/16 *---------- DMG3401LSN Spice Model ---------- .SUBCKT DMG3401LSN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03105 RS 30 3 0.001 RG 20 2 7.3 CGS 2 3 1.279E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -0.8354 .MODEL DCGD D CJO = 2.85E-010 VJ = 0.07814 M = 0.2639 .MODEL DSUB D IS = 1.226E-009 N = 1.149 RS = 0.06597 + BV = 50 CJO = 1.669E-010 VJ = 0.6861 M = 0.5296 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3401LSN Spice Model v1.0 Last Revised 2012/11/28 *---------- DMG3401LSNQ Spice Model ---------- .SUBCKT DMG3401LSNQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03105 RS 30 3 0.001 RG 20 2 7.3 CGS 2 3 1.279E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -0.8354 .MODEL DCGD D CJO = 2.85E-010 VJ = 0.07814 M = 0.2639 .MODEL DSUB D IS = 1.226E-009 N = 1.149 RS = 0.06597 + BV = 50 CJO = 1.669E-010 VJ = 0.6861 M = 0.5296 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3401LSNQ Spice Model v1.0 Last Revised 2018/11/28 *---------- DMG3402L Spice Model ---------- .SUBCKT DMG3402L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01938 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 35 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3402L Spice Model v1.0M Last Revised 2016/5/9 *---------- DMG3402LQ Spice Model ---------- .SUBCKT DMG3402LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01938 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 35 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3402LQ Spice Model v1.0M Last Revised 2016/5/9 *---------- DMG3406L Spice Model ---------- .SUBCKT DMG3406L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004399 RS 30 3 0.001 RG 20 2 2.29 CGS 2 3 4.23E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 + TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 .MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3406L Spice Model v1.0 Last Revised 2015/9/23 *---------- DMG3407SSN Spice Model ---------- .SUBCKT DMG3407SSN 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.024 RS 30 3 0.001 RG 20 2 12.45 CGS 2 3 9.2E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.3E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 + VTO = -1.85 TOX = 1E-007 NSUB = 1E+015 KP = 45 + KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1.4E-009 N = 1.5 RS = 1E-007 BV = 34.31 + CJO = 1E-010 VJ = 0.6 M = 0.3 XTI = 0 TT = 4.25E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1B Last Revised 2020/03/18 *---------- DMG3413L Spice Model ---------- .SUBCKT DMG3413L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04181 RS 30 3 0.001 RG 20 2 12.29 CGS 2 3 3.719E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.46E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 9.397 KAPPA = 9.681 VTO = -1.023 .MODEL DCGD D CJO = 3.903E-010 VJ = 0.2566 M = 0.45 .MODEL DSUB D IS = 2.936E-009 N = 1.327 RS = 0.07557 BV = 33 CJO = 1.598E-010 VJ = 0.4699 M = 0.5274 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3413L Spice Model v1.0 Last Revised 2015/6/4 *---------- DMG3414U Spice Model ---------- .SUBCKT DMG3414U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01338 RS 30 3 1E-003 RG 20 2 18 CGS 2 3 7.702E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 5.027E-008 VTO = 0.8394 + TOX = 6E-008 NSUB = 1E+016 KP = 46.34 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 4.271E-010 N = 1.076 RS = 0.05217 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3414U Spice Model v1.0 Last Revised 2011/7/7 *---------- DMG3414UQ Spice Model ---------- .SUBCKT DMG3414UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01338 RS 30 3 1E-003 RG 20 2 18 CGS 2 3 7.702E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 5.027E-008 VTO = 0.8394 + TOX = 6E-008 NSUB = 1E+016 KP = 46.34 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 4.271E-010 N = 1.076 RS = 0.05217 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3414UQ Spice Model v1.0 Last Revised 2016/9/26 *---------- DMG3415U Spice Model ---------- .SUBCKT DMG3415U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0317 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.65E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.464E+005 KP = 25.76 ETA = 0.005087 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.7287 VTO = -0.7669 .MODEL DCGD D CJO = 4.12E-010 VJ = 0.1028 M = 0.3062 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 2.196E-010 VJ = 0.2994 M = 0.4305 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3415U Spice Model v2.0 Last Revised 2013/12/10 *---------- DMG3415UFY4 Spice Model ---------- .SUBCKT DMG3415UFY4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02849 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.685E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.206E+005 KP = 26.84 ETA = 0.004426 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.2906 VTO = -0.7669 .MODEL DCGD D CJO = 6.481E-010 VJ = 0.4221 M = 0.4512 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 1.057E-010 VJ = 0.008444 M = 0.2401 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3415UFY4 Spice Model v1.0 Last Revised 2011/3/24 *---------- DMG3415UFY4Q Spice Model ---------- .SUBCKT DMG3415UFY4Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02849 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.685E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.206E+005 KP = 26.84 ETA = 0.004426 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.2906 VTO = -0.7669 .MODEL DCGD D CJO = 6.481E-010 VJ = 0.4221 M = 0.4512 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 1.057E-010 VJ = 0.008444 M = 0.2401 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3415UFY4Q Spice Model v1.0M Last Revised 2016/1/27 *---------- DMG3418L Spice Model ---------- .SUBCKT DMG3418L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01938 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 35 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3418L Spice Model v1.0M Last Revised 2016/5/9 *---------- DMG3420U Spice Model ---------- .SUBCKT DMG3420U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3420U Spice Model v1.0 Last Revised 2010/5/9 *---------- DMG3420UQ Spice Model ---------- .SUBCKT DMG3420UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01692 RS 30 3 0.001 RG 20 2 2.59 CGS 2 3 3.316E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 0.8496 + TOX = 6E-008 NSUB = 1E+016 KP = 33.27 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.676E-010 VJ = 0.6 M = 0.6002 .MODEL DSUB D IS = 1.559E-008 N = 1.278 RS = 0.07423 BV = 23 CJO = 3.241E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3420UQ Spice Model v1.0 Last Revised 2017/6/6 *---------- DMG3N60SCT Spice Model ---------- .SUBCKT DMG3N60SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.225 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 3.373E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 3.4 TOX = 6E-008 NSUB = 1E+016 KP = 1.179 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.727E-010 VJ = 0.6564 M = 0.8 .MODEL DSUB D IS = 2.232E-010 N = 1.328 RS = 0.02148 BV = 650 CJO = 5.32E-010 VJ = 0.6625 M = 0.7963 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3N60SCT Spice Model v1.0 Last Revised 2016/12/9 *---------- DMG3N60SJ3 Spice Model ---------- .SUBCKT DMG3N60SJ3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.225 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 3.373E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 3.4 TOX = 6E-008 NSUB = 1E+016 KP = 1.179 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.727E-010 VJ = 0.6564 M = 0.8 .MODEL DSUB D IS = 2.232E-010 N = 1.328 RS = 0.02148 BV = 650 CJO = 5.32E-010 VJ = 0.6625 M = 0.7963 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3N60SJ3 Spice Model v1.0 Last Revised 2016/12/9 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=18/09/2014 *VERSION=1 .SUBCKT DMG4406LSS 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 5E-3 RS 23 3 Rmod1 4E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 1250E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1250E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.1 TOX=5.8E-8 NSUB=3E+16 KP=130 NFS=1E+12 IS=.5E-15 N=10) .MODEL DCGD D (CJO =260E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1E-12 N=1.025 RS=0.002 BV=35 CJO=400E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMG4407SSS Spice Model ---------- .SUBCKT DMG4407SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004201 RS 30 3 0.001 RG 20 2 5.79 CGS 2 3 2.07E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.67 KAPPA = 19.32 VTO = -2.119 .MODEL DCGD D CJO = 7.288E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.826E-008 N = 1.639 RS = 4.441E-010 BV = 30 CJO = 1E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4407SSS Spice Model v1.0M Last Revised 2016/2/2 *SRC=DMG4413LSS;DI_DMG4413LSS;MOSFETs P;Enh;30.0V 10.5A 7.50mohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMG4413LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 2.56m RS 30 3 1.19m RG 20 2 14.3 CGS 2 3 4.25n EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.52n R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=-2.10 KP=5.73 .MODEL DCGD D (CJO=6.52n VJ=0.600 M=0.680 .MODEL DSUB D (IS=43.6n N=1.50 RS=0.129 BV=30.0 + CJO=2.73n VJ=0.800 M=0.420 TT=285n .MODEL DLIM D (IS=100U) .ENDS *---------- DMG4435SSS Spice Model ---------- .SUBCKT DMG4435SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01231 RS 30 3 0.001 RG 20 2 6.83 CGS 2 3 1.465E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.556E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 164.9 VMAX = 1.945E+005 KP = 39.94 + ETA = 0.005129 TOX = 6E-008 NSUB = 1.104E+016 KAPPA = 3.689 VTO = -2.072 .MODEL DCGD D CJO = 7.47E-010 VJ = 0.518 M = 0.3662 .MODEL DSUB D IS = 2.364E-010 N = 1.296 RS = 0.007836 BV = 33 +CJO = 9.148E-011 VJ = 0.644 M = 0.663 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4435SSS Spice Model v1.0 Last Revised 2010/9/14 *---------- DMG4466SSS Spice Model ---------- .SUBCKT DMG4466SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4466SSS Spice Model v1.1 Last Revised 2011/1/8 *---------- DMG4466SSSL Spice Model ---------- .SUBCKT DMG4466SSSL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4466SSSL Spice Model v1.1 Last Revised 2011/1/18 *---------- DMG4468LFG Spice Model ---------- .SUBCKT DMG4468LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009103 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 7.889E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.003725 VTO = 2.01 + TOX = 6E-008 NSUB = 1E+017 KP = 50.8 KAPPA = 110.3 U0 = 400 .MODEL DCGD D CJO = 4.839E-010 VJ = 0.213 M = 0.3746 .MODEL DSUB D IS = 2.251E-010 N = 1.221 RS = 0.005011 BV = 35 CJO = 7.248E-011 VJ = 0.3928 M = 0.5931 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4468LFG Spice Model v1.0 Last Revised 2010/10/19 *---------- DMG4468LK3 Spice Model ---------- .SUBCKT DMG4468LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009266 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 7.889E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0001 VTO = 2.046 + TOX = 6.045E-008 NSUB = 1E+017 KP = 28.97 KAPPA = 71.64 U0 = 400 .MODEL DCGD D CJO = 4.839E-010 VJ = 0.213 M = 0.3746 .MODEL DSUB D IS = 3.11E-010 N = 1.297 RS = 0.00732 BV = 35 CJO = 6.786E-011 VJ = 0.4257 M = 0.5551 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4468LK3 Spice Model v1.0 Last Revised 2010/10/6 *---------- DMG4496SSS Spice Model ---------- .SUBCKT DMG4496SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01007 RS 30 3 0.001 RG 20 2 2.86 CGS 2 3 4.495E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01276 VTO = 2.136 + TOX = 6E-008 NSUB = 4.86E+016 KP = 25.62 KAPPA = 7.551 U0=400 .MODEL DCGD D CJO = 1.88E-010 VJ = 0.1151 M = 0.2705 .MODEL DSUB D IS = 1E-009 N = 1.345 RS = 0.004398 BV = 35 CJO = 2.225E-010 VJ = 0.6 M = 0.4775 .MODEL DLIM D IS = 1E-005 .ENDS *Diodes DMG4496SSS Spice Model v1.0 Last Revised 2010/6/24 *---------- DMG4511SK4 Spice Model ---------- *NMOS .SUBCKT DMG4511SK4_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 0.0001227 RG 20 2 1.56 CGS 2 3 8.311E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 2.45 + TOX = 6E-008 NSUB = 1E+016 KP = 43.98 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.144E-010 VJ = 0.09587 M = 0.3239 .MODEL DSUB D IS = 3.094E-011 N = 1.136 RS = 0.01791 BV = 40 CJO = 1.281E-010 VJ = 0.3722 M = 0.5383 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMG4511SK4_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02422 RS 30 3 0.001 RG 20 2 7 CGS 2 3 9.898E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.558E+005 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+016 KP = 16.62 KAPPA = 1 VTO = -1.536 .MODEL DCGD D CJO = 3.059E-010 VJ = 0.1859 M = 0.2861 .MODEL DSUB D IS = 3.103E-011 N = 1.129 RS = 0.03535 BV = 45 CJO = 1.446E-010 VJ = 0.8474 M = 0.6504 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4511SK4 Spice Model v1.0 Last Revised 2011/10/28 *---------- DMG4710SSS Spice Model ---------- .SUBCKT DMG4710SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMG4710SSS Spice Model v1.0 Last Revised 2010/11/9 *---------- DMG4712SSS Spice Model ---------- .SUBCKT DMG4712SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01 RS 30 3 0.001 RG 20 2 1.3 CGS 2 3 2.268E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.297E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 9.356E+005 ETA = 4.441E-017 VTO = 1.817 + TOX = 6E-008 NSUB = 4.849E+016 KP = 150 KAPPA = 138.4 U0 = 400 .MODEL DCGD D CJO = 4.894E-010 VJ = 0.01098 M = 0.1971 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 2.502E-010 N = 1.063 RS = 0.03357 .MODEL DL D IS = 1.094E-005 N = 1.118 RS = 0.04796 VJ = 0.2303 CJO = 6.6E-010 M = 0.6461 TT = 1.595E-008 .MODEL DR D IS = 1E-015 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMG4712SSS Spice Model v1.0 Last Revised 2010/10/25 *---------- DMG4800LFG Spice Model ---------- .SUBCKT DMG4800LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00633 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 6.734E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.616 + TOX = 6.045E-008 NSUB = 9.967E+015 KP = 31.63 KAPPA = 28.61 U0 = 400 .MODEL DCGD D CJO = 5.334E-010 VJ = 0.3477 M = 0.4238 .MODEL DSUB D IS = 2.647E-009 N = 1.349 RS = 0.006635 BV = 35 CJO = 5.245E-011 VJ = 0.6712 M = 0.8243 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4800LFG Spice Model v1.0 Last Revised 2010/10/6 *---------- DMG4800LK3 Spice Model ---------- .SUBCKT DMG4800LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00609 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 6.734E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.515 + TOX = 6.045E-008 NSUB = 3.203E+015 KP = 26.14 KAPPA = 26.53 U0 = 400 .MODEL DCGD D CJO = 5.334E-010 VJ = 0.3477 M = 0.4238 .MODEL DSUB D IS = 2.647E-009 N = 1.306 RS = 0.01224 BV = 35 CJO = 5.333E-011 VJ = 0.6305 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4800LK3 Spice Model v1.0 Last Revised 2010/10/6 *SYM=POWMOSN .SUBCKT DMG4800LSD D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=2.304672 RD 10 1 2m RS 30 3 4m CGS 20 3 692p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 488p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=400 VMAX=40k + ETA=0.1m VTO=1.62 TOX=60n NSUB=2.16e16 .MODEL DCGD D CJO=488p VJ=450m M=0.420 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=30 + CJO=48p VJ=0.950 M=0.920 .MODEL DLIM D IS=100U .ENDS *---------- DMG4822SSD Spice Model ---------- .SUBCKT DMG4822SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4822SSD Spice Model v1.0 Last Revised 2011/6/27 *---------- DMG4822SSDQ Spice Model ---------- .SUBCKT DMG4822SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4822SSDQ Spice Model v1.0 Last Revised 2017/12/25 *---------- DMG4932LSD Spice Model ---------- *NMOS_Q1 .SUBCKT DMG4932LSD_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *NMOS_Q2 .SUBCKT DMG4932LSD_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4932LSD Spice Model v1.0 Last Revised 2011/6/20 *---------- DMG4N60SCT Spice Model ---------- .SUBCKT DMG4N60SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 3.09 CGS 2 3 5.393E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.626 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4508 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.385E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.344E-010 N = 1.337 RS = 0.005462 BV = 660 CJO = 6.251E-010 VJ = 0.6 M = 0.692 TT=1.2E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4N60SCT Spice Model v1.0M Last Revised 2016/5/5 *---------- DMG4N60SJ3 Spice Model ---------- .SUBCKT DMG4N60SJ3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 3.09 CGS 2 3 5.393E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.626 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4508 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.385E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.344E-010 N = 1.337 RS = 0.005462 BV = 660 CJO = 6.251E-010 VJ = 0.6 M = 0.692 TT=1.2E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4N60SJ3 Spice Model v1.0M Last Revised 2016/5/5 *---------- DMG4N60SK3 Spice Model ---------- .SUBCKT DMG4N60SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.712 RS 30 3 0.001 RG 20 2 3.34 CGS 2 3 5.257E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.767 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6613 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.457E-010 VJ = 0.6971 M = 0.8 .MODEL DSUB D IS = 2.293E-010 N = 1.33 RS = 0.005872 BV = 600 CJO = 7.577E-010 VJ = 0.7116 M = 0.8 TT=2.3E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4N60SK3 Spice Model v1.0 Last Revised 2015/11/10 *---------- DMG4N65CT Spice Model ---------- .SUBCKT DMG4N65CT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.901 RS 30 3 0.001 RG 20 2 2.4 CGS 2 3 8.859E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 4.347 + TOX = 6E-008 NSUB = 1E+016 KP = 4.509 U0 = 400 KAPPA = 13.05 .MODEL DCGD D CJO = 3.337E-010 VJ = 0.6 M = 0.9816 .MODEL DSUB D IS = 2.232E-010 N = 1.338 RS = 0.002184 + BV = 700 CJO = 1.208E-009 VJ = 0.4984 M = 0.83 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4N65CT Spice Model v1.0 Last Revised 2014/5/9 ---------- DMG4N65CTI Spice Model ---------- .SUBCKT DMG4N65CTI 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.901 RS 30 3 0.001 RG 20 2 2.4 CGS 2 3 8.859E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 4.347 + TOX = 6E-008 NSUB = 1E+016 KP = 4.509 U0 = 400 KAPPA = 13.05 .MODEL DCGD D CJO = 3.337E-010 VJ = 0.6 M = 0.9816 .MODEL DSUB D IS = 2.232E-010 N = 1.338 RS = 0.002184 + BV = 700 CJO = 1.208E-009 VJ = 0.4984 M = 0.83 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4N65CTI Spice Model v1.0 Last Revised 2018/2/1 *---------- DMG5802LFX Spice Model ---------- .SUBCKT DMG5802LFX 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01074 RS 30 3 0.001 RG 20 2 1.47 CGS 2 3 9.956E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.9E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 3.802E+005 ETA = 1E-006 VTO = 1.016 + TOX = 6E-008 NSUB = 1E+016 KP = 94.75 KAPPA = 7.017 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 1.268E-009 N = 1.142 RS = 0.02111 BV = 30 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG5802LFX Spice Model v1.0 Last Revised 2011/6/27 *---------- DMG6301UDW Spice Model ---------- .SUBCKT DMG6301UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.5296 RS 30 3 0.08274 RG 20 2 84 CGS 2 3 2.421E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9252 + TOX = 6E-008 NSUB = 1E+016 KP = 1.517 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.033E-011 VJ = 0.2003 M = 0.3 .MODEL DSUB D IS = 1.714E-009 N = 1.454 RS = 0.03011 BV = 35 CJO = 1.259E-011 VJ = 0.6 M = 0.3013 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6301UDW Spice Model v1.0 Last Revised 2015/6/4 *---------- DMG6302UDW Spice Model ---------- .SUBCKT DMG6302UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.093 RS 30 3 0.001 RG 20 2 1970 CGS 2 3 2.534E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4462 KAPPA = 49.86 VTO = -0.8635 .MODEL DCGD D CJO = 4.312E-012 VJ = 0.1388 M = 0.2172 .MODEL DSUB D IS = 3.518E-010 N = 1.34 RS = 0.5434 BV = 40 CJO = 1.22E-011 VJ = 0.6489 M = 0.363 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6302UDW Spice Model v1.0 Last Revised 2015/3/16 *---------- DMG6402LVT Spice Model ---------- .SUBCKT DMG6402LVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01735 RS 30 3 0.001 RG 20 2 1.51 CGS 2 3 3.898E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.95E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.5 + TOX = 6E-008 NSUB = 1E+017 KP = 16.9 KAPPA = 9.834 U0 = 400 .MODEL DCGD D CJO = 2.661E-010 VJ = 0.2369 M = 0.408 .MODEL DSUB D IS = 1.445E-010 N = 1.257 RS = 0.01296 BV = 35 + CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6402LVT Spice Model v2.0 Last Revised 2012/8/6 *DIODES_INC_SPICE_MODEL DMG6601LVT *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Mar2014 *VERSION=1 .SUBCKT DMG6601LVT G1 S2 G2 D2 S1 D1 *NMOS M1 1 2 3 3 Nmod1 RD D1 1 Rmod1 18E-3 RS 23 3 Rmod1 24E-3 RG G1 22 2 RIN G1 23 2E11 RDS D1 23 2E9 CGS 2 3 280E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 840E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 D1 DSUB EL 2 22 1 3 0.003 LS S1 23 2E-9 RL S1 23 3 RLrun S1 S2 3E+9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.31 TOX=4.5E-8 NSUB=1E+16 KP=50 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 72E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=1E-12 N=1.03 RS=0.022 BV=33 CJO=120E-12 VJ=0.45 M=0.33 TT=3E-9 TRS1=.0035) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .SIMULATOR DEFAULT *PMOS M2 4 5 6 6 Pmod1 RD2 D2 4 Rmod2 40E-3 RS2 53 6 Rmod2 50E-3 RG2 G2 52 17 RIN2 G2 53 2E11 RDS2 D2 53 2E9 CGS2 5 6 460E-12 EGD2 16 0 4 5 1 VFB2 18 0 0 FFB2 4 5 VFB2 1 CGD2 17 18 860E-12 R12 17 0 1 D12 16 17 DLIM DDG2 19 18 DCGD2 R22 16 19 1 D22 19 0 DLIM DSD2 D2 53 DSUB2 EL2 5 52 4 6 .003 RL2 S2 53 3 LS2 S2 53 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.2 TOX=4.5E-8 NSUB=1E+15 KP=45 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD2 D (CJO = 100E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB2 D (IS=.14E-12 N=1.02 RS=0.033 BV=33 CJO=94E-12 VJ=.45 M=0.33 TT=3E-9 TRS1=.002) .MODEL Rmod2 RES (TC1=2.5e-3 TC2=1E-6) *common model for PMOS and NMOS .MODEL DLIM D (IS=100U N=1 T_ABS=25) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *---------- DMG6602SVT Spice Model ---------- *NMOS .SUBCKT DMG6602SVT_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01593 RS 30 3 0.001 RG 20 2 1.4 CGS 2 3 2.711E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 9.816 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.317E-010 VJ = 0.2783 M = 0.4405 .MODEL DSUB D IS = 1E-015 N = 0.8731 RS = 0.04482 BV = 35 CJO = 1.086E-011 VJ = 0.4101 M = 0.9 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMG6602SVT_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04762 RS 30 3 0.001 RG 20 2 17 CGS 2 3 3.334E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 7.77E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 7.61 KAPPA = 25 VTO = -1.533 .MODEL DCGD D CJO = 1.725E-010 VJ = 0.4474 M = 0.3707 .MODEL DSUB D IS = 1.119E-011 N = 1.169 RS = 0.06724 BV = 35 CJO = 2.406E-011 VJ = 0.1 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6602SVT Spice Model v1.0 Last Revised 2011/8/15 *---------- DMG6602SVTQ Spice Model ---------- *NMOS .SUBCKT DMG6602SVTQ_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01593 RS 30 3 0.001 RG 20 2 1.4 CGS 2 3 2.711E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 9.816 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.317E-010 VJ = 0.2783 M = 0.4405 .MODEL DSUB D IS = 1E-015 N = 0.8731 RS = 0.04482 BV = 35 CJO = 1.086E-011 VJ = 0.4101 M = 0.9 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMG6602SVTQ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04762 RS 30 3 0.001 RG 20 2 17 CGS 2 3 3.334E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 7.77E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 7.61 KAPPA = 25 VTO = -1.533 .MODEL DCGD D CJO = 1.725E-010 VJ = 0.4474 M = 0.3707 .MODEL DSUB D IS = 1.119E-011 N = 1.169 RS = 0.06724 BV = 35 CJO = 2.406E-011 VJ = 0.1 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6602SVTQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMG6898LSD Spice Model ---------- .SUBCKT DMG6898LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01083 RS 30 3 0.001 RG 20 2 1.51 CGS 2 3 1.024E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.004367 VTO = 1.404 + TOX = 6E-008 NSUB = 5.26E+016 KP = 106.5 KAPPA = 22.88 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 1.112E-009 N = 1.26 RS = 0.01288 BV = 25 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6898LSD Spice Model v1.0 Last Revised 2011/1/28 *SRC=DMG6968U;DI_DMG6968U;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMG6968U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.9m RS 40 3 1.62m RG 20 2 33.7 CGS 2 3 119p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 226p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=0.900 KP=31.8 .MODEL DCGD D (CJO=226p VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0 + CJO=176p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMG6968UDM;DI_DMG6968UDM;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMG6968UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.9m RS 40 3 1.62m RG 20 2 40.7 CGS 2 3 114p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 204p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=0.900 KP=31.8 .MODEL DCGD D (CJO=204p VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0 + CJO=134p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS *---------- DMG6968UQ Spice Model ---------- .SUBCKT DMG6968UQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0085 RS 30 3 1E-006 RG 20 2 202.55 CGS 2 3 1.425E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8882 + TOX = 6E-008 NSUB = 1E+014 KP = 65.92 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.647E-010 VJ = 0.5 M = 0.449 .MODEL DSUB D IS = 8.187E-008 N = 1.537 RS = 0.01064 BV = 20.71 + CJO = 2.59E-010 VJ = 0.6 M = 0.4816 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/08/19 *---------- DMG6968UTS Spice Model ---------- .SUBCKT DMG6968UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6968UTS Spice Model v1.0 Last Revised 2011/5/5 *---------- DMG7401SFG Spice Model ---------- .SUBCKT DMG7401SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004201 RS 30 3 0.001 RG 20 2 5.79 CGS 2 3 2.07E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.67 KAPPA = 19.32 VTO = -2.119 .MODEL DCGD D CJO = 7.288E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.826E-008 N = 1.639 RS = 4.441E-010 BV = 30 CJO = 1E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7401SFG Spice Model v1.0M Last Revised 2016/2/2 *---------- DMG7401SFGQ Spice Model ---------- .SUBCKT DMG7401SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004201 RS 30 3 0.001 RG 20 2 5.79 CGS 2 3 2.07E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.67 KAPPA = 19.32 VTO = -2.119 .MODEL DCGD D CJO = 7.288E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.826E-008 N = 1.639 RS = 4.441E-010 BV = 30 CJO = 1E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7401SFGQ Spice Model v1.0M Last Revised 2016/2/2 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 *------connections-------D-G-S * .SUBCKT DMG7408SFG 3 4 5 M1 6 20 8 8 Nmod RG 4 2 2 RD 3 6 Rmod1 0.015 RS 8 5 Rmod1 0.005 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 549E-12 C2 2 3 129E-12 C3 15 14 390E-12 C4 16 8 400E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMG7408SFG * *$ *---------- DMG7410SFG Spice Model ---------- .SUBCKT DMG7410SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006868 RS 30 3 0.001 RG 20 2 1.92 CGS 2 3 5.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0.001 VTO = 2.23 + TOX = 6E-008 NSUB = 1E+016 KP = 33.14 U0 = 400 KAPPA = 0.001011 .MODEL DCGD D CJO = 2.68E-010 VJ = 0.204 M = 0.3131 .MODEL DSUB D IS = 1.168E-010 N = 1.244 RS = 0.00323 BV = 35 CJO = 1.898E-010 VJ = 0.2902 M = 0.4412 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7410SFG Spice Model v1.0 Last Revised 2011/8/16 *---------- DMG7430LFG Spice Model ---------- .SUBCKT DMG7430LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 + BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7430LFG Spice Model v1.0 Last Revised 2014/3/14 *---------- DMG7N65SCT Spice Model ---------- .SUBCKT DMG7N65SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.115 RS 30 3 0.001 RG 20 2 1.36 CGS 2 3 8.891E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.384 + TOX = 6E-008 NSUB = 1E+016 KP = 4.959 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.065E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 687 CJO = 1.426E-009 VJ = 0.7128 M = 0.8 TT=1.35E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7N65SCT Spice Model v1.0 Last Revised 2016/12/31 *---------- DMG7N65SCTI Spice Model ---------- .SUBCKT DMG7N65SCTI 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.115 RS 30 3 0.001 RG 20 2 1.36 CGS 2 3 8.891E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.384 + TOX = 6E-008 NSUB = 1E+016 KP = 4.959 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.065E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 687 CJO = 1.426E-009 VJ = 0.7128 M = 0.8 TT=1.35E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7N65SCTI Spice Model v1.0 Last Revised 2016/12/31 *---------- DMG7N65SJ3 Spice Model ---------- .SUBCKT DMG7N65SJ3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.115 RS 30 3 0.001 RG 20 2 1.36 CGS 2 3 8.891E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.384 + TOX = 6E-008 NSUB = 1E+016 KP = 4.959 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.065E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 687 CJO = 1.426E-009 VJ = 0.7128 M = 0.8 TT=1.35E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7N65SJ3 Spice Model v1.0 Last Revised 2016/12/31 *---------- DMG8601UFG Spice Model ---------- .SUBCKT DMG8601UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG8601UFG Spice Model v1.0 Last Revised 2011/5/5 *SYM=POWMOSN .SUBCKT DMN2075 D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.24 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=25.0 + CJO=28p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *---------- DMG8880LK3 Spice Model ---------- .SUBCKT DMG8880LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 0.97 CGS 2 3 1.154E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 9.897E+005 ETA = 4.441E-017 VTO = 2.123 + TOX = 6E-008 NSUB = 1E+017 KP = 68.03 KAPPA = 416.1 U0 = 202.1 .MODEL DCGD D CJO = 7.076E-010 VJ = 0.225 M = 0.3502 .MODEL DSUB D IS = 2.798E-010 N = 1.195 RS = 0.003607 BV = 35 CJO = 1.85E-010 VJ = 0.7412 M = 0.6747 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG8880LK3 Spice Model v1.0 Last Revised 2010/9/21 *---------- DMG8880LSS Spice Model ----------.SUBCKT DMG8880LSS 10 20 30 * TERMINALS: D G SM1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 0.97 CGS 2 3 1.154E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 9.897E+005 ETA = 4.441E-017 VTO = 2.123 + TOX = 6E-008 NSUB = 1E+017 KP = 68.03 KAPPA = 416.1 U0 = 202.1 .MODEL DCGD D CJO = 7.076E-010 VJ = 0.225 M = 0.3502 .MODEL DSUB D IS = 2.798E-010 N = 1.195 RS = 0.003607 BV = 35 CJO = 1.85E-010 VJ = 0.7412 M = 0.6747 .MODEL DLIM D IS = 0.0001 .ENDS*Diodes DMG8880LSS Spice Model v1.0 Last Revised 2010/9/21 *---------- DMG8N65SCT Spice Model ---------- .SUBCKT DMG8N65SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.115 RS 30 3 0.001 RG 20 2 1.36 CGS 2 3 8.891E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.384 + TOX = 6E-008 NSUB = 1E+016 KP = 4.959 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.065E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 687 CJO = 1.426E-009 VJ = 0.7128 M = 0.8 TT=1.35E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG8N65SCT Spice Model v1.0 Last Revised 2016/12/31 *SYM=POWMOSN .SUBCKT DMG9926UDM D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.5 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 ********************************************* .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS *SYM=POWMOSN .SUBCKT DMG9926USD D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.5 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 ********************************************* .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS *---------- DMG9933USD Spice Model ---------- .SUBCKT DMG9933USD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG9933USD Spice Model v1.0 Last Revised 2011/2/11 *---------- DMG9N65CT Spice Model ---------- .SUBCKT DMG9N65CT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.659 RS 30 3 0.001 RG 20 2 2.2 CGS 2 3 2.237E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.235 + TOX = 6E-008 NSUB = 1E+016 KP = 1.943 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-009 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 697 CJO = 1.694E-009 VJ = 0.6 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG9N65CT Spice Model v1.0 Last Revised 2018/2/7 *---------- DMG9N65CTI Spice Model ---------- .SUBCKT DMG9N65CTI 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.659 RS 30 3 0.001 RG 20 2 2.2 CGS 2 3 2.237E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.235 + TOX = 6E-008 NSUB = 1E+016 KP = 1.943 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-009 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 697 CJO = 1.694E-009 VJ = 0.6 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG9N65CTI Spice Model v1.0 Last Revised 2018/2/7 *---------- DMGD7N45SSD Spice Model ---------- .SUBCKT DMGD7N45SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.921 RS 30 3 0.001 RG 20 2 2.26 CGS 2 3 2.414E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.547 + TOX = 6E-008 NSUB = 1E+016 KP = 1.954 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.374E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.323E-010 N = 1.407 RS = 0.01826 BV = 511 CJO = 2.53E-010 VJ = 0.7837 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMGD7N45SSD Spice Model v1.0 Last Revised 2018/2/8 *---------- DMHC10H170SFJ Spice Model ---------- *NMOS .SUBCKT DMHC10H170SFJ_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1083 RS 30 3 1E-008 RG 20 2 1.37 CGS 2 3 1.07E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 + TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 .MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMHC10H170SFJ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1739 RS 30 3 0.001 RG 20 2 12.5 CGS 2 3 1.213E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 .MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 .MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMHC10H170SFJ Spice Model v1.0 Last Revised 2016/1/5 *---------- DMHC3025LSD Spice Model ---------- *NMOS .SUBCKT DMHC3025LSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMHC3025LSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01769 RS 30 3 0.001 RG 20 2 10.8 CGS 2 3 5.834E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008 + NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877 .MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMHC3025LSD Spice Model v1.0 Last Revised 2013/4/17 *---------- DMHC4035LSDQ Spice Model ---------- *NMOS .SUBCKT DMHC4035LSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02213 RS 30 3 0.001 RG 20 2 1.56 CGS 2 3 5.488E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.146 + TOX = 6E-008 NSUB = 1E+016 KP = 30.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.594E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.405E-010 N = 1.261 RS = 0.01477 BV = 43 CJO = 2.653E-010 VJ = 0.8 M = 0.6 TT=3E-09 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMHC4035LSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04326 RS 30 3 0.001 RG 20 2 13.07 CGS 2 3 5.846E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.014 KAPPA = 19.32 VTO = -1.583 .MODEL DCGD D CJO = 1.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.222E-010 N = 1.255 RS = 0.0255 BV = 43 CJO = 3E-010 VJ = 0.8 M = 0.6 TT = 7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMHC4035LSDQ Spice Model v1.0M Last Revised 2016/12/23 *---------- DMHC6070LSD Spice Model ---------- *NMOS .SUBCKT DMHC6070LSD_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04411 RS 30 3 0.001 RG 20 2 1.31 CGS 2 3 7.136E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 + TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS *---------- DMHC6070LSD_P Spice Model ---------- .SUBCKT DMHC6070LSD_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1006 RS 30 3 0.001 RG 20 2 13.07 CGS 2 3 5.928E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 6.038 KAPPA = 19.32 VTO = -2.241 .MODEL DCGD D CJO = 8.101E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.484E-010 N = 1.368 RS = 0.02186 BV = 60 CJO = 7.164E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMHC6070LSD Spice Model v1.0M Last Revised 2016/4/8 *---------- DMT10H032LFJ Spice Model ---------- .SUBCKT DMT10H032LFJ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.019 RS 30 3 0.0001 RG 20 2 1.15 CGS 2 3 6.791E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.45 + TOX = 1E-007 NSUB = 1E+015 KP = 30 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.253E-010 VJ = 0.6377 M = 0.9 .MODEL DSUB D IS = 1.802E-010 N = 1.214 RS = 0.01225 BV = 106.4 + CJO = 4E-010 VJ = 0.9 M = 0.3089 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/13 *---------- DMHT3006LFJ Spice Model ---------- .SUBCKT DMHT3006LFJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMHT3006LFJ Spice Model v1.0M Last Revised 2016/5/3 *---------- DMHT6016LFJ Spice Model ---------- .SUBCKT DMHT6016LFJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMHT6016LFJ Spice Model v1.0 Last Revised 2016/11/23 *---------- DMJ65H430SCTI Spice Model ---------- .SUBCKT DMJ65H430SCTI 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.335 RS 30 3 0.0001 RG 20 2 2.03 CGS 2 3 7.65E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.21E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.35 + TOX = 1E-007 + NSUB = 1E+015 KP = 9.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9E-010 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 9.5E-009 N = 1.51 RS = 0.00395 BV = 766 + CJO = 3.464E-009 VJ = 0.9 M = 0.8 XTI = 0 TT = 1.973E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ65H430SCTI Spice Model v1.1 Last Revised 2020/09/18 *---------- DMJ65H650SCTI Spice Model ---------- .SUBCKT DMJ65H650SCTI 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.339 RS 30 3 0.001 RG 20 2 104.7 CGS 2 3 6.288E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.52E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.25 + TOX = 6E-008 NSUB = 1E+016 KP = 1.81 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.83E-010 VJ = 0.77 M = 0.8 .MODEL DSUB D IS = 2.218E-010 N = 1.28 RS = 0.0063 BV = 728 CJO = 2.16E-009 VJ = 0.53 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ65H650SCTI Spice Model v1.0 Last Revised 2019/1/31 *---------- DMJ65H900HCTI Spice Model ---------- .SUBCKT DMJ70H600SH3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3681 RS 30 3 0.001 RG 20 2 3.94 CGS 2 3 6.303E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.027 + TOX = 6E-008 NSUB = 1E+016 KP = 1.26 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.15E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.295E-010 N = 1.299 RS = 0.007844 BV = 772 CJO = 4E-009 VJ = 0.6 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ65H900HCTI Spice Model v1.0 Last Revised 2017/3/1 *---------- DMJ65H900HCTI Spice Model ---------- .SUBCKT DMJ70H600SH3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3681 RS 30 3 0.001 RG 20 2 3.94 CGS 2 3 6.303E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.027 + TOX = 6E-008 NSUB = 1E+016 KP = 1.26 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.15E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.295E-010 N = 1.299 RS = 0.007844 BV = 772 CJO = 4E-009 VJ = 0.6 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ65H900HCTI Spice Model v1.0 Last Revised 2017/3/1 *---------- DMJ70H1D0SV3 Spice Model ---------- .SUBCKT DMJ70H1D0SV3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6345 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 4.113E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.825 + TOX = 6E-008 NSUB = 1E+016 KP = 0.8461 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.5E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.288E-010 N = 1.299 RS = 0.007 BV = 774 CJO = 2E-009 VJ = 0.7983 M = 0.8 TT = 1.08E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H1D0SV3 Spice Model v1.0 Last Revised 2017/4/11 *---------- DMJ70H1D3SH3 Spice Model ---------- .SUBCKT DMJ70H1D3SH3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9496 RS 30 3 0.001 RG 20 2 3.52 CGS 2 3 3.31E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 + TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 .MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H1D3SH3 Spice Model v1.0 Last Revised 2015/9/14 *---------- DMJ70H1D3SI3 Spice Model ---------- .SUBCKT DMJ70H1D3SI3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9496 RS 30 3 0.001 RG 20 2 3.52 CGS 2 3 3.31E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 + TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 .MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H1D3SI3 Spice Model v1.0 Last Revised 2015/9/14 *---------- DMJ70H1D3SJ3 Spice Model ---------- .SUBCKT DMJ70H1D3SJ3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9496 RS 30 3 0.001 RG 20 2 3.52 CGS 2 3 3.31E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 + TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 .MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H1D3SJ3 Spice Model v1.0 Last Revised 2015/9/14 *---------- DMJ70H1D3SK3 Spice Model ---------- .SUBCKT DMJ70H1D3SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.1 RS 30 3 0.0001 RG 20 2 3.9 CGS 2 3 2.705E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.303 + TOX = 1E-007 NSUB = 1E+015 KP = 2.6 U0 = 200 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.6E-010 VJ = 0.5113 M = 0.9 .MODEL DSUB D IS = 4.923E-012 N = 1.123 RS = 0.03261 BV = 752.1 + CJO = 1.161E-009 VJ = 0.6 M = 0.8 TT = 6.718E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/13 *---------- DMJ70H1D4SJ3 Spice Model ---------- .SUBCKT DMJ70H1D4SJ3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.1 RS 30 3 0.0001 RG 20 2 3.9 CGS 2 3 2.705E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.303 + TOX = 1E-007 NSUB = 1E+015 KP = 2.6 U0 = 200 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.6E-010 VJ = 0.5113 M = 0.9 .MODEL DSUB D IS = 4.923E-012 N = 1.123 RS = 0.03261 BV = 752.1 + CJO = 1.161E-009 VJ = 0.6 M = 0.8 TT = 6.718E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/13 *---------- DMJ70H1D4SV3 Spice Model ---------- .SUBCKT DMJ70H1D4SV3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9432 RS 30 3 0.001 RG 20 2 4.05 CGS 2 3 3.369E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.622 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9096 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.1E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.403E-010 N = 1.369 RS = 0.007559 BV = 795 CJO = 1.992E-009 VJ = 0.6 M = 0.8 TT = 8.8E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H1D4SV3 Spice Model v1.0 Last Revised 2017/4/12 *---------- DMJ70H1D5SV3 Spice Model ---------- .SUBCKT DMJ70H1D5SV3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.7381 RS 30 3 0.001 RG 20 2 2.23 CGS 2 3 3.093E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.558 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3995 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.3E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.254E-010 N = 1.36 RS = 0.009297 BV = 792 CJO = 1.992E-009 VJ = 0.6 M = 0.8 TT = 9.5E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H1D5SV3 Spice Model v1.0 Last Revised 2017/4/12 *---------- DMJ70H600HCT Spice Model ---------- .SUBCKT DMJ70H600HCT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.445 RS 30 3 0.0001 RG 20 2 2.34 CGS 2 3 5.4E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.35 + TOX = 1E-007 + NSUB = 1E+015 KP = 7.6 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7E-010 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 8.5E-009 N = 1.53 RS = 0.0045 BV = 751 + CJO = 3.05E-009 VJ = 0.6 M = 0.8 XTI = 0 TT = 9.705E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H600HCT Spice Model v1.1 Last Revised 2022/09/13 *---------- DMJ70H600HCTI Spice Model ---------- .SUBCKT DMJ70H600HCTI 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.442 RS 30 3 0.0001 RG 20 2 2.25 CGS 2 3 5.4E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.35 + TOX = 1E-007 + NSUB = 1E+015 KP = 7.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7E-010 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 8.9E-009 N = 1.53 RS = 0.0045 BV = 739.4 + CJO = 3.05E-009 VJ = 0.6 M = 0.8 XTI = 0 TT = 9.705E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H600HCTI Spice Model v1.1 Last Revised 2022/09/13 *---------- DMJ70H600HK3 Spice Model ---------- .SUBCKT DMJ70H600HK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.0001 RG 20 2 2.46 CGS 2 3 5.4E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.57E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.35 + TOX = 1E-007 + NSUB = 1E+015 KP = 8.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7E-010 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 9E-009 N = 1.55 RS = 0.0045 BV = 752.2 + CJO = 3.05E-009 VJ = 0.6 M = 0.8 XTI = 0 TT = 9.705E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H600HK3 Spice Model v1.1 Last Revised 2022/08/22 *---------- DMJ65H900HCTI Spice Model ---------- .SUBCKT DMJ70H600SH3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3681 RS 30 3 0.001 RG 20 2 3.94 CGS 2 3 6.303E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.027 + TOX = 6E-008 NSUB = 1E+016 KP = 1.26 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.15E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.295E-010 N = 1.299 RS = 0.007844 BV = 772 CJO = 4E-009 VJ = 0.6 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ65H900HCTI Spice Model v1.0 Last Revised 2017/3/1 *---------- DMJ70H601SK3 Spice Model ---------- .SUBCKT DMJ70H601SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3542 RS 30 3 0.001 RG 20 2 2.58 CGS 2 3 6.72E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.659 + TOX = 6E-008 NSUB = 1E+016 KP = 1.351 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.15E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.288E-010 N = 1.299 RS = 0.007 BV = 775 CJO = 2.8E-009 VJ = 0.6 M = 0.8 TT=1.3E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H601SK3 Spice Model v1.0 Last Revised 2017/4/11 *---------- DMJ70H601SV3 Spice Model ---------- .SUBCKT DMJ70H601SV3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3542 RS 30 3 0.001 RG 20 2 2.58 CGS 2 3 6.72E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.659 + TOX = 6E-008 NSUB = 1E+016 KP = 1.351 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.15E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.288E-010 N = 1.299 RS = 0.007 BV = 775 CJO = 2.8E-009 VJ = 0.6 M = 0.8 TT=1.3E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H601SV3 Spice Model v1.0 Last Revised 2017/4/11 *---------- DMJ70H900HJ3 Spice Model ---------- .SUBCKT DMJ70H900HJ3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.406 RS 30 3 0.001 RG 20 2 3.63 CGS 2 3 4.621E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.701 + TOX = 6E-008 NSUB = 1E+016 KP = 0.7411 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.856E-010 VJ = 0.4981 M = 0.9056 .MODEL DSUB D IS = 2.234E-010 N = 1.323 RS = 0.006451 BV = 812 CJO = 1.769E-009 VJ = 0.9 M = 0.8991 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ70H900HJ3 Spice Model v1.0M Last Revised 2016/6/20 *---------- DMJ7N70SK3 Spice Model ---------- .SUBCKT DMJ7N70SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9496 RS 30 3 0.001 RG 20 2 3.52 CGS 2 3 3.31E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 + TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 .MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ7N70SK3 Spice Model v1.0 Last Revised 2018/2/21 *---------- DMJ7N70SK3 Spice Model ---------- .SUBCKT DMJ7N70SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9496 RS 30 3 0.001 RG 20 2 3.52 CGS 2 3 3.31E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 + TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 .MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMJ7N70SK3 Spice Model v1.0 Last Revised 2018/2/21 *DIODES_DMMT32N45CV_SPICE_MODEL *DATE=06Sept2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DMMT32N45CV NPN (IS=12.80f NF=1.00 BF=329 VAF=121 + IKF=96.4m ISE=102f NE=2.00 BR=4.00 NR=1.00 NK=0.72 ISC=53p NC=1.97 + VAR=24.0 IKR=90.0m RE=0.665 RB=3.26 RC=0.126 RCO=0.5 + XTB=1.2 CJE=8.64p VJE=1.10 MJE=0.500 CJC=2.25p VJC=0.300 + MJC=0.300 TF=501p TR=164n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.003 GAMMA=52n QUASIMOD=1) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *SRC=DMMT3904W;DI_DMMT3904W;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes *Inc. Matched Transistor .MODEL DI_DMMT3904W NPN (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=426p TR=71.3n EG=1.12 ) *SRC=DMMT3904W;DI_DMMT3904W;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes *Inc. Matched Transistor .MODEL DI_DMMT3904W NPN (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=426p TR=71.3n EG=1.12 ) ***************************************************************************************************************************************** *SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Matched BJTs - Single device of dual .MODEL DI_DMMT3906 PNP (IS=20.3f NF=1.00 BF=437 VAF=114 + IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=504p TR=94.3n EG=1.12 ) ***************************************************************************************************************************************** ***************************************************************************************************************************************** *SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Matched BJTs - Single device of dual .MODEL DI_DMMT3906 PNP (IS=20.3f NF=1.00 BF=437 VAF=114 + IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=504p TR=94.3n EG=1.12 ) ***************************************************************************************************************************************** *SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP .MODEL DI_DMMT3906W PNP (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=531p TR=85.6n EG=1.12 ) *SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP .MODEL DI_DMMT3906W PNP (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=531p TR=85.6n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=2 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=E2 * 3=B2 4=C2 * .SUBCKT DMMT5401 1 2 3 4 5 6 Q1 1 2 6 Mod1 Q2 4 3 5 Mod1 * .MODEL Mod1 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=2 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=E2 * 3=B2 4=C2 * .SUBCKT DMMT5551 1 2 3 4 5 6 Q1 1 2 6 Mod1 Q2 4 3 5 Mod1 * .MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=2 *PIN_ORDER * 1=B1 6=C1 * 2=E2 5=E1 * 3=B2 4=C2 * .SUBCKT DMMT5551S 1 2 3 4 5 6 Q1 6 1 5 Mod1 Q2 4 3 2 Mod1 * .MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 .ENDS * *$ *SRC=DMN100;DI_DMN100;MOSFETs N;Enh;30.0V 1.10A 0.150ohms Diodes Inc. MOSFET .MODEL DI_DMN100 NMOS( LEVEL=1 VTO=2.00 KP=11.5 GAMMA=2.48 + PHI=.75 LAMBDA=306u RD=21.0m RS=21.0m + IS=550f PB=0.800 MJ=0.460 CBD=199p + CBS=238p CGSO=360n CGDO=300n CGBO=840n ) * -- Assumes default L=100U W=100U -- *---------- DMN1001UCA10 Spice Model ---------- .SUBCKT DMN1001UCA10 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0014 RS 30 3 0.0001 RG 20 2 377.3 CGS 2 3 2.336E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.44E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.25 + TOX = 1E-007 NSUB = 1E+015 KP = 1000 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 5.103E-010 N = 1.206 RS = 0.005796 BV = 15.2 + CJO = 9.282E-010 VJ = 0.9 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/01/06 *---------- DMN1002UCA6 Spice Model ---------- .SUBCKT DMN1002UCA6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.211E-005 RS 30 3 0.001 RG 20 2 501.3 CGS 2 3 2.932E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141 + TOX = 6E-008 NSUB = 1E+016 KP = 1881 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.649E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.658E-010 N = 1.089 RS = 4.441E-010 BV = 16 CJO = 8.348E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1002UCA6 Spice Model v1.0 Last Revised 2017/10/18 *---------- DMN1003UCA6 Spice Model ---------- .SUBCKT DMN1003UCA6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001516 RS 30 3 0.001 RG 20 2 2 CGS 2 3 2.9E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9351 + TOX = 6E-008 NSUB = 1E+016 KP = 2145 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.75E-009 N = 1.084 RS = 4.441E-010 BV = 15 CJO = 8.348E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1003UCA6 Spice Model v1.0 Last Revised 2017/6/28 *---------- DMN1003UFDE Spice Model ---------- .SUBCKT DMN1003UFDE D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001726 RS 30 3 1E-006 RG 20 2 1.94 CGS 2 3 1.892E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.698E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.003 + TOX = 1E-007 NSUB = 1E+014 KP = 381 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.75E-009 VJ = 0.8 M = 0.5034 .MODEL DSUB D IS = 3E-008 N = 1.391 RS = 0.001594 BV = 15.8 + CJO = 5.92E-010 VJ = 0.9 M = 0.6423 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/04/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN1004UFDF Spice Model ---------- .SUBCKT DMN1004UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001015 RS 30 3 0.001 RG 20 2 2.2 CGS 2 3 1.851E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8155 + TOX = 6E-008 NSUB = 1E+016 KP = 494.3 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.933E-009 VJ = 0.7844 M = 0.6 .MODEL DSUB D IS = 1.631E-008 N = 1.136 RS = 0.007419 BV = 14 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1004UFDF Spice Model v1.0M Last Revised 2016/5/26 *---------- DMN1004UFV Spice Model ---------- .SUBCKT DMN1004UFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001015 RS 30 3 0.001 RG 20 2 2.2 CGS 2 3 1.851E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8155 + TOX = 6E-008 NSUB = 1E+016 KP = 494.3 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.933E-009 VJ = 0.7844 M = 0.6 .MODEL DSUB D IS = 1.631E-008 N = 1.136 RS = 0.007419 BV = 14 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1004UFV Spice Model v1.0M Last Revised 2016/5/26 *---------- DMN1006UCA6 Spice Model ---------- .SUBCKT DMN1006UCA6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001045 RS 30 3 0.001 RG 20 2 485.6 CGS 2 3 1.95E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9751 + TOX = 6E-008 NSUB = 1E+016 KP = 615.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.115E-009 N = 1.172 RS = 0.003108 BV = 14 CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1006UCA6 Spice Model v1.0 Last Revised 2017/6/26 *---------- DMN1008UFDF Spice Model ---------- .SUBCKT DMN1008UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003143 RS 30 3 0.001 RG 20 2 1.45 CGS 2 3 7.277E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7348 + TOX = 6E-008 NSUB = 1E+016 KP = 114.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.145E-009 VJ = 0.8 M = 0.6716 .MODEL DSUB D IS = 1.104E-007 N = 1.389 RS = 0.01258 BV = 19 CJO = 2.22E-010 VJ = 0.6 M = 0.6283 TT = 7.62E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1008UFDF Spice Model v1.0M Last Revised 2016/9/5 *---------- DMN1008UFDFQ Spice Model ---------- .SUBCKT DMN1008UFDFQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003143 RS 30 3 0.001 RG 20 2 1.45 CGS 2 3 7.277E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7348 + TOX = 6E-008 NSUB = 1E+016 KP = 114.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.145E-009 VJ = 0.8 M = 0.6716 .MODEL DSUB D IS = 1.104E-007 N = 1.389 RS = 0.01258 BV = 19 CJO = 2.22E-010 VJ = 0.6 M = 0.6283 TT = 7.62E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1008UFDFQ Spice Model v1.0M Last Revised 2016/9/5 *---------- DMN1014UFDF Spice Model ---------- .SUBCKT DMN1014UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006485 RS 30 3 0.001 RG 20 2 2.45 CGS 2 3 3.93E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9777 + TOX = 6E-008 NSUB = 1E+016 KP = 75 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.382E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.5E-009 N = 1.4 RS = 0.009693 BV = 15.59 + CJO = 1.25E-010 VJ = 0.8 M = 0.6 TT = 4.745E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1014UFDF Spice Model v1.0J Last Revised 2018/06/13 *---------- DMN1016UCB6 Spice Model ---------- .SUBCKT DMN1016UCB6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01495 RS 30 3 1E-008 RG 20 2 3 CGS 2 3 2.491E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8702 + TOX = 6E-008 NSUB = 1E+016 KP = 65.71 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.5E-010 VJ = 0.8 M = 0.3 .MODEL DSUB D IS = 2.294E-010 N = 1.129 RS = 0.0324 BV = 20 CJO = 3.378E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1016UCB6 Spice Model v1.0 Last Revised 2015/7/22 *---------- DMN1017UCP3 Spice Model ---------- .SUBCKT DMN1017UCP3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009415 RS 30 3 0.001 RG 20 2 2.09 CGS 2 3 6.485E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.65E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.976 + TOX = 6E-008 NSUB = 1E+016 KP = 128.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.273E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.373E-010 N = 1.103 RS = 0.02934 BV = 13 CJO = 2.31E-010 VJ = 0.7039 M = 0.6 TT = 6.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1017UCP3 Spice Model v1.0M Last Revised 2017/4/11 *---------- DMN1019UFDE Spice Model ---------- .SUBCKT DMN1019UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003695 RS 30 3 0.001 RG 20 2 1.12 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.085E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001248 VTO = 0.9106 + TOX = 6E-008 NSUB = 1E+016 KP = 208.4 U0 = 400 KAPPA = 94.25 .MODEL DCGD D CJO = 1.867E-009 VJ = 0.2465 M = 0.4333 .MODEL DSUB D IS = 2.007E-009 N = 1.095 RS = 0.01324 + BV = 20 CJO = 5.112E-012 VJ = 6.535E-009 M = 0.00671 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.81 BV = 5.381 .ENDS *Diodes DMN1019UFDE Spice Model v1.0 Last Revised 2014/4/03 ---------- DMN1019USN Spice Model ---------- .SUBCKT DMN1019USN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003695 RS 30 3 0.001 RG 20 2 1.12 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.085E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001248 VTO = 0.9106 + TOX = 6E-008 NSUB = 1E+016 KP = 208.4 U0 = 400 KAPPA = 94.25 .MODEL DCGD D CJO = 1.867E-009 VJ = 0.2465 M = 0.4333 .MODEL DSUB D IS = 2.007E-009 N = 1.095 RS = 0.01324 + BV = 20 CJO = 5.112E-012 VJ = 6.535E-009 M = 0.00671 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.81 BV = 5.381 .ENDS *Diodes DMN1019USN Spice Model v1.0 Last Revised 2018/2/1 ---------- DMN1019USNQ Spice Model ---------- .SUBCKT DMN1019USNQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003695 RS 30 3 0.001 RG 20 2 1.12 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.085E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001248 VTO = 0.9106 + TOX = 6E-008 NSUB = 1E+016 KP = 208.4 U0 = 400 KAPPA = 94.25 .MODEL DCGD D CJO = 1.867E-009 VJ = 0.2465 M = 0.4333 .MODEL DSUB D IS = 2.007E-009 N = 1.095 RS = 0.01324 + BV = 20 CJO = 5.112E-012 VJ = 6.535E-009 M = 0.00671 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.81 BV = 5.381 .ENDS *Diodes DMN1019USNQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN1019UVT Spice Model ---------- .SUBCKT DMN1019UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003695 RS 30 3 0.001 RG 20 2 1.12 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.085E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001248 VTO = 0.9106 + TOX = 6E-008 NSUB = 1E+016 KP = 208.4 U0 = 400 KAPPA = 94.25 .MODEL DCGD D CJO = 1.867E-009 VJ = 0.2465 M = 0.4333 .MODEL DSUB D IS = 2.007E-009 N = 1.095 RS = 0.01324 + BV = 20 CJO = 5.112E-012 VJ = 6.535E-009 M = 0.00671 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.81 BV = 5.381 .ENDS *Diodes DMN1019UVT Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN1021UCA4 Spice Model ---------- .SUBCKT DMN1021UCA4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01058 RS 30 3 0.001 RG 20 2 17.29 CGS 2 3 3.188E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1 + TOX = 6E-008 NSUB = 1E+015 KP = 98.11 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.564E-010 VJ = 0.5 M = 0.4644 .MODEL DSUB D IS = 2.026E-009 N = 1.268 RS = 4.441E-010 BV = 13.07 + CJO = 1.603E-010 VJ = 0.6609 M = 0.5202 TT = 5.56E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2022/09/30 *---------- DMN1023UCB4 Spice Model ---------- .SUBCKT DMN1023UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01232 RS 30 3 0.001 RG 20 2 3.34 CGS 2 3 2.726E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.35E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.75 + TOX = 6E-008 NSUB = 1E+016 KP = 63.11 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.032E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.26E-010 N = 1.218 RS = 0.03453 BV = 13.64 + CJO = 4.331E-010 VJ = 0.8 M = 0.6 TT = 5.56E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1023UCB4 Spice Model v1.0J Last Revised 2018/08/02 *---------- DMN1025UFDB Spice Model ---------- .SUBCKT DMN1025UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01123 RS 30 3 0.001 RG 20 2 11.46 CGS 2 3 8.145E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.95E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.698 + TOX = 6E-008 NSUB = 1E+016 KP = 68.44 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.104E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.939E-009 N = 1.071 RS = 0.06849 BV = 10 CJO = 1E-015 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1025UFDB Spice Model v1.0 Last Revised 2015/10/21 *---------- DMN1029UFDB Spice Model ---------- .SUBCKT DMN1029UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01212 RS 30 3 0.001 RG 20 2 1.26 CGS 2 3 7.966E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.842 + TOX = 6E-008 NSUB = 1E+016 KP = 85.31 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.233E-010 VJ = 0.5 M = 0.5671 .MODEL DSUB D IS = 1.415E-009 N = 1.088 RS = 0.04255 BV = 20 CJO = 1E-015 VJ = 0.6 M = 0.6045 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1029UFDB Spice Model v1.0 Last Revised 2015/6/1 *---------- DMN1032UCB4 Spice Model ---------- .SUBCKT DMN1032UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.01537 RG 20 2 3 CGS 2 3 2.965E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8636 + TOX = 6E-008 NSUB = 1E+016 KP = 72.73 U0 = 400 KAPPA = 49.24 .MODEL DCGD D CJO = 8.344E-011 VJ = 0.6 M = 0.407 .MODEL DSUB D IS = 1.684E-010 N = 1.089 RS = 0.01698 BV = 15 CJO = 2.507E-010 VJ = 0.6381 M = 0.2149 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1032UCB4 Spice Model v1.0 Last Revised 2014/4/30 *---------- DMN1032UCP4 Spice Model ---------- .SUBCKT DMN1032UCP4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02447 RS 30 3 0.001 RG 20 2 3.1 CGS 2 3 2.417E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.911 + TOX = 6E-008 NSUB = 1E+016 KP = 51.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.3E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.331E-010 N = 1.129 RS = 0.09648 BV = 14 CJO = 2E-010 VJ = 0.8 M = 0.6 TT = 5.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1032UCP4 Spice Model v1.0M Last Revised 2017/9/30 *---------- DMN1033UCB4 Spice Model ---------- .SUBCKT DMN1033UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01433 RS 30 3 0.001 RG 20 2 0.98 CGS 2 3 2.151E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6971 + TOX = 6E-008 NSUB = 1E+016 KP = 88.11 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.509E-009 N = 1.028 RS = 0.05865 BV = 10 CJO = 1E-015 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1033UCB4 Spice Model v1.0 Last Revised 2015/10/21 *---------- DMN1045UFR4 Spice Model ---------- .SUBCKT DMN1045UFR4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01314 RS 30 3 0.001 RG 20 2 61.57 CGS 2 3 3.169E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8826 +TOX = 6E-008 NSUB = 1E+016 KP = 38.3 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.161E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.332E-009 N = 1.199 RS = 0.06751 BV = 16.36 CJO = 1E-012 VJ = 0.6 M = 0.7826 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1045UFR4 Spice Model v1.0W Last Revised 2018/11/7 *---------- DMN1053UCP4 Spice Model ---------- .SUBCKT DMN1053UCP4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02848 RS 30 3 0.007857 RG 20 2 1.16 CGS 2 3 5.054E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8543 + TOX = 6E-008 NSUB = 1E+016 KP = 113.6 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 4.172E-010 VJ = 0.6 M = 0.6531 .MODEL DSUB D IS = 1.997E-008 N = 1.295 RS = 0.1266 BV = 15 CJO = 1.714E-012 VJ = 0.6607 M = 0.6958 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1053UCP4 Spice Model v1.0 Last Revised 2016/7/25 *---------- DMN1054UCB4 Spice Model ---------- .SUBCKT DMN1054UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02848 RS 30 3 0.007857 RG 20 2 1.16 CGS 2 3 5.054E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8543 + TOX = 6E-008 NSUB = 1E+016 KP = 113.6 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 4.172E-010 VJ = 0.6 M = 0.6531 .MODEL DSUB D IS = 1.997E-008 N = 1.295 RS = 0.1266 BV = 15 CJO = 1.714E-012 VJ = 0.6607 M = 0.6958 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1054UCB4 Spice Model v1.0 Last Revised 2015/1/23 *---------- DMN10H099SFG Spice Model ---------- .SUBCKT DMN10H099SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04112 RS 30 3 0.001 RG 20 2 2.26 CGS 2 3 1.26E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.34 + TOX = 6E-008 NSUB = 1E+016 KP = 19.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.964E-010 VJ = 0.6036 M = 0.6 .MODEL DSUB D IS = 2.363E-010 N = 1.266 RS = 0.008006 BV = 109 CJO = 2.221E-010 VJ = 0.6 M = 0.7028 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H099SFG Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN10H099SK3 Spice Model ---------- .SUBCKT DMN10H099SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04112 RS 30 3 0.001 RG 20 2 2.26 CGS 2 3 1.26E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.34 + TOX = 6E-008 NSUB = 1E+016 KP = 19.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.964E-010 VJ = 0.6036 M = 0.6 .MODEL DSUB D IS = 2.363E-010 N = 1.266 RS = 0.008006 BV = 109 CJO = 2.221E-010 VJ = 0.6 M = 0.7028 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H099SK3 Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN10H100SK3 Spice Model ---------- .SUBCKT DMN10H100SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04112 RS 30 3 0.001 RG 20 2 2.26 CGS 2 3 1.26E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.34 + TOX = 6E-008 NSUB = 1E+016 KP = 19.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.964E-010 VJ = 0.6036 M = 0.6 .MODEL DSUB D IS = 2.363E-010 N = 1.266 RS = 0.008006 BV = 109 CJO = 2.221E-010 VJ = 0.6 M = 0.7028 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H100SK3 Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN10H120SE Spice Model ---------- .SUBCKT DMN10H120SE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.05782 RS 30 3 0.001 RG 20 2 1.86 CGS 2 3 5.654E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.378 + TOX = 6E-008 NSUB = 1E+016 KP = 20 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 2.382E-010 VJ = 0.7 M = 0.7 .MODEL DSUB D IS = 9.862E-009 N = 1.554 RS = 4.441E-010 BV = 125 CJO = 4.436E-010 VJ = 0.7 M = 0.7033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H120SE Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN10H120SFG Spice Model ---------- .SUBCKT DMN10H120SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.05782 RS 30 3 0.001 RG 20 2 1.86 CGS 2 3 5.654E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.378 + TOX = 6E-008 NSUB = 1E+016 KP = 20 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 2.382E-010 VJ = 0.7 M = 0.7 .MODEL DSUB D IS = 9.862E-009 N = 1.554 RS = 4.441E-010 BV = 125 CJO = 4.436E-010 VJ = 0.7 M = 0.7033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H120SFG Spice Model v1.0 Last Revised 2014/12/09 *---------- DMN10H170SFDE Spice Model ---------- .SUBCKT DMN10H170SFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1083 RS 30 3 1E-008 RG 20 2 1.37 CGS 2 3 1.07E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 + TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 .MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H170SFDE Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN10H170SFG Spice Model ---------- .SUBCKT DMN10H170SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1083 RS 30 3 1E-008 RG 20 2 1.37 CGS 2 3 1.07E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 + TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 .MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H170SFG Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN10H170SK3 Spice Model ---------- .SUBCKT DMN10H170SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1083 RS 30 3 1E-008 RG 20 2 1.37 CGS 2 3 1.07E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 + TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 .MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H170SK3 Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN10H170SVT Spice Model ---------- .SUBCKT DMN10H170SVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1083 RS 30 3 1E-008 RG 20 2 1.37 CGS 2 3 1.07E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 + TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 .MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H170SVT Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN10H170SVTQ Spice Model ---------- .SUBCKT DMN10H170SVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1083 RS 30 3 1E-008 RG 20 2 1.37 CGS 2 3 1.07E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 + TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 .MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H170SVTQ Spice Model v1.0 Last Revised 2015/9/30 *---------- DMN10H220L Spice Model ---------- .SUBCKT DMN10H220L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H220L Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN10H220LDV Spice Model ---------- .SUBCKT DMN10H220LDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H220LDV Spice Model v1.0M Last Revised 2020/6/8 *---------- DMN10H220LE Spice Model ---------- .SUBCKT DMN10H220LE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H220LE Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN10H220LFDF Spice Model ---------- .SUBCKT DMN10H220LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H220LFDF Spice Model v1.0M Last Revised 2020/1/17 *---------- DMN10H220LFVW Spice Model ---------- .SUBCKT DMN10H220LFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H220LFVW Spice Model v1.0M Last Revised 2020/5/19 *---------- DMN10H220LK3 Spice Model ---------- .SUBCKT DMN10H220LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H220LK3 Spice Model v1.0M Last Revised 2019/5/5 *---------- DMN10H220LPDW Spice Model ---------- .SUBCKT DMN10H220LPDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H220LPDW Spice Model v1.0M Last Revised 2019/9/24 *---------- DMN10H220LQ Spice Model ---------- .SUBCKT DMN10H220LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H220LQ Spice Model v1.0M Last Revised 2016/8/19 *---------- DMN10H220LVT Spice Model ---------- .SUBCKT DMN10H220LVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1185 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 3.939E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 + TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 .MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H220LVT Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN10H6D2LFDB Spice Model ---------- .SUBCKT DMN10H6D2LFDB 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 3.552 RS 30 3 0.0001 RG 20 2 37.13 CGS 2 3 3.62E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.561 + TOX = 1E-007 + NSUB = 1E+015 KP = 0.74 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.75E-011 VJ = 0.5 M = 0.5 .MODEL DSUB D IS = 2.1E-008 N = 1.922 RS = 0.1198 BV = 120.5 + CJO = 8E-012 VJ = 0.9 M = 0.5 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H6D2LFDB Spice Model v1.1 Last Revised 2021/06/18 *---------- DMN10H700S Spice Model ---------- .SUBCKT DMN10H700S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.5307 RS 30 3 0.001 RG 20 2 1.89 CGS 2 3 2.39E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.95E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.374 + TOX = 6E-008 NSUB = 1E+016 KP = 2.893 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.347E-011 VJ = 0.7808 M = 0.6 .MODEL DSUB D IS = 2.258E-010 N = 1.404 RS = 0.02857 BV = 117 CJO = 1E-015 VJ = 0.6 M = 0.6149 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H700S Spice Model v1.0M Last Revised 2016/4/19 *---------- DMN1150UFB Spice Model ---------- .SUBCKT DMN1150UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.05481 RS 30 3 0.001 RG 20 2 90 CGS 2 3 6.366E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.707E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.7353 + TOX = 6E-008 NSUB = 1E+016 KP = 11.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.627E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 1.294E-009 N = 1.166 RS = 0.4831 BV = 16.8 CJO = 1.444E-015 VJ = 0.1 M = 0.9578 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1150UFB Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN1150UFL3 Spice Model ---------- .SUBCKT DMN1150UFL3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.05481 RS 30 3 0.001 RG 20 2 90 CGS 2 3 6.366E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.707E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.7353 + TOX = 6E-008 NSUB = 1E+016 KP = 11.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.627E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 1.294E-009 N = 1.166 RS = 0.4831 BV = 16.8 CJO = 1.444E-015 VJ = 0.1 M = 0.9578 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1150UFL3 Spice Model v1.0 Last Revised 2015/04/13 *---------- DMN11M1UCA14 Spice Model ---------- .SUBCKT DMN11M1UCA14 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0004911 RS 30 3 0.0001 RG 20 2 377.9 CGS 2 3 2.77E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.492E-008 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.286 + TOX = 1E-007 NSUB = 1E+016 KP = 1666 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.14E-010 VJ = 0.8 M = 0.4434 .MODEL DSUB D IS = 3.353E-008 N = 1.434 RS = 0.003672 BV = 13.8 + CJO = 1.31E-009 VJ = 2 M = 0.2408 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/05/23 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN11M2UCA14 Spice Model ---------- .SUBCKT DMN11M2UCA14 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 SINGLE X2 10 40 50 SINGLE .ENDS *Single Device .SUBCKT SINGLE 10 20 30 * TERMINALS: D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00038 RS 30 3 0.0001 RG 20 2 306.2 CGS 2 3 5.782E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-008 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.02 + TOX = 6E-008 NSUB = 1E+016 KP = 900 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.063E-009 VJ = 0.9 M = 0.6 .MODEL DSUB D IS = 1.505E-008 N = 1.467 RS = 0.0007 BV = 14.54 + CJO = 3.8E-009 VJ = 0.9 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2021/10/15 *---------- DMN1250UFEL Spice Model ---------- .SUBCKT DMN1250UFEL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1663 RS 30 3 1E-008 RG 20 2 2.35 CGS 2 3 1.394E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.48E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9121 + TOX = 6E-008 NSUB = 1E+016 KP = 2.576 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.178E-011 VJ = 0.7572 M = 0.2141 .MODEL DSUB D IS = 2.68E-010 N = 1.331 RS = 0.6651 BV = 15 CJO = 5.599E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1250UFEL Spice Model v1.0 Last Revised 2015/7/29 *---------- DMN1260UFA Spice Model ---------- .SUBCKT DMN1260UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.07116 RS 30 3 0.001 RG 20 2 376.2 CGS 2 3 4.8E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.48E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7455 + TOX = 6E-008 NSUB = 1E+016 KP = 5.146 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.425E-011 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 2.321E-010 N = 1.095 RS = 1.469 BV = 16 CJO = 8E-012 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1260UFA Spice Model v1.0M Last Revised 2017/4/17 *---------- DMN12M3UCA6 Spice Model ---------- .SUBCKT DMN12M3UCA6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.211E-005 RS 30 3 0.001 RG 20 2 501.3 CGS 2 3 2.932E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141 + TOX = 6E-008 NSUB = 1E+016 KP = 1881 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.649E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.658E-010 N = 1.089 RS = 4.441E-010 BV = 16 CJO = 8.348E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN12M3UCA6 Spice Model v1.0 Last Revised 2017/10/18 *---------- DMN12M7UCA10 Spice Model ---------- .SUBCKT DMN12M7UCA10 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 SINGLE X2 10 40 50 SINGLE .ENDS *Single Device .SUBCKT SINGLE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00063 RS 30 3 0.0001 RG 20 2 497 CGS 2 3 2.932E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.145 + TOX = 6E-008 NSUB = 1E+016 KP = 900 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.626E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.047E-009 N = 1.247 RS = 0.01097 BV = 16.34 + CJO = 1E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN12M7UCA10 Spice Model v1.0J Last Revised 2018/11/07 *---------- DMN12M8UCA10 Spice Model ---------- .SUBCKT DMN12M8UCA10 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 SINGLE X2 10 40 50 SINGLE .ENDS *Single Device .SUBCKT SINGLE 10 20 30 * TERMINALS: D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00075 RS 30 3 0.0001 RG 20 2 599.5 CGS 2 3 2.442E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.36E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.145 + TOX = 6E-008 NSUB = 1E+016 KP = 900 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.026E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.815E-008 N = 1.387 RS = 0.00697 BV = 14.22 + CJO = 1.35E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2021/12/23 *---------- DMN13H750S Spice Model ---------- .SUBCKT DMN13H750S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.4191 RS 30 3 0.001 RG 20 2 2.34 CGS 2 3 2.221E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 5.916 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.259E-010 VJ = 0.8 M = 0.6922 .MODEL DSUB D IS = 2.895E-010 N = 1.349 RS = 0.02012 BV = 136 CJO = 2.22E-010 VJ = 0.6 M = 0.7029 TT=1.2E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN13H750S Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN13M9UCA6 Spice Model ---------- .SUBCKT DMN13M9UCA6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001516 RS 30 3 0.001 RG 20 2 2 CGS 2 3 2.9E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9351 + TOX = 6E-008 NSUB = 1E+016 KP = 2145 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.75E-009 N = 1.084 RS = 4.441E-010 BV = 15 CJO = 8.348E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN13M9UCA6 Spice Model v1.0 Last Revised 2017/7/13 *---------- DMN14M8UFDF Spice Model ---------- .SUBCKT DMN14M8UFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0034 RS 30 3 0.0001 RG 20 2 5.34 CGS 2 3 8.78E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.1 + TOX = 1E-007 NSUB = 1E+014 KP = 380 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.3E-009 VJ = 0.5 M = 0.5 .MODEL DSUB D IS = 5E-009 N = 1.26 RS = 0.0035 BV = 16.5 + CJO = 3.22E-010 VJ = 0.7 M = 0.5 XTI = 0 TT = 1.225E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/08/17 *---------- DMN15H310SE Spice Model ---------- .SUBCKT DMN15H310SE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1731 RS 30 3 0.001 RG 20 2 0.98 CGS 2 3 3.848E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.651 + TOX = 6E-008 NSUB = 1E+016 KP = 11.81 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.862E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.094E-010 N = 1.262 RS = 0.01335 BV = 170 CJO = 2.22E-010 VJ = 0.6 M = 0.6149 TT=3.8E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN15H310SE Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN15H310SK3 Spice Model ---------- .SUBCKT DMN15H310SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1731 RS 30 3 0.001 RG 20 2 0.98 CGS 2 3 3.848E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.651 + TOX = 6E-008 NSUB = 1E+016 KP = 11.81 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.862E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.094E-010 N = 1.262 RS = 0.01335 BV = 170 CJO = 2.22E-010 VJ = 0.6 M = 0.6149 TT=3.8E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN15H310SK3 Spice Model v1.0 Last Revised 2016/1/15 *---------- DMN15M3UCA6 Spice Model ---------- .SUBCKT DMN15M3UCA6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001045 RS 30 3 0.001 RG 20 2 485.6 CGS 2 3 1.95E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9751 + TOX = 6E-008 NSUB = 1E+016 KP = 615.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.115E-009 N = 1.172 RS = 0.003108 BV = 14 CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN15M3UCA6 Spice Model v1.0 Last Revised 2017/6/26 *---------- DMN15M5UCA4-7-55 Spice Model ---------- .SUBCKT DMN15M5UCA4_7_55 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001615 RS 30 3 0.0001 RG 20 2 281.4 CGS 2 3 1.38E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.012E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.1 + TOX = 1E-007 NSUB = 1E+015 KP = 500 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.848E-010 VJ = 0.8 M = 0.3764 .MODEL DSUB D IS = 2.181E-009 N = 1.289 RS = 0.001984 BV = 15.48 + CJO = 4.303E-011 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN15M5UCA6 Spice Model ---------- .SUBCKT DMN15M5UCA6 20 30 40 50 * TERMINALS : G1 S1 G2 S2 * MODEL FORMAT : SPICE3 * Editor : B X1 60 20 30 SINGLE X2 60 40 50 SINGLE .ENDS DMN15M5UCA6 *Single Device .SUBCKT SINGLE 10 20 30 * TERMINALS : D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0016 RS 30 3 0.0001 RG 20 2 472.9 CGS 2 3 4.8E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.48E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.88 + TOX = 1E-007 NSUB = 1E+014 KP = 750 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3E-011 VJ = 0.5 M = 0.35 .MODEL DSUB D IS = 1.1E-008 N = 1.257 RS = 0.0022 BV = 15.46 + CJO = 9.42E-010 VJ = 0.6 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS SINGLE *Diodes Spice Model v1.1 Last Revised 2020/07/17 *---------- DMN16M0UCA6 Spice Model ---------- * MODEL FORMAT : SPICE3 .SUBCKT DMN16M0UCA6 20 30 40 50 * TERMINALS : G1 S1 G2 S2 X1 10 20 30 SINGLE X2 10 40 50 SINGLE .ENDS DMN16M0UCA .SUBCKT SINGLE 10 20 30 * TERMINALS : D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00232 RS 30 3 1E-005 RG 20 2 219.7 CGS 2 3 1.528E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.465E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.18 + TOX = 6E-008 NSUB = 1E+016 KP = 550 U0 = 400 KAPPA = 30 IS = 0 .MODEL DCGD D CJO = 6.839E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.353E-010 N = 1.16 RS = 0.008017 BV = 12.2 + CJO = 4.815E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS SINGLE *Diodes Spice Model v1.0J Last Revised 2019/04/17 *---------- DMN16M7UCA6 Spice Model ---------- .SUBCKT DMN16M7UCA6 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0007829 RS 30 3 0.0001 RG 20 2 603.2 CGS 2 3 2.069E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.104E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9997 + TOX = 1E-007 NSUB = 1.019E+014 KP = 380.4 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.2E-010 VJ = 0.8 M = 0.4454 .MODEL DSUB D IS = 3.021E-008 N = 1.337 RS = 0.007029 BV = 13.35 + CJO = 7.377E-010 VJ = 1.5 M = 0.172 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/11/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN16M8UCA6 Spice Model ---------- .SUBCKT DMN16M8UCA6 D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0007936 RS 30 3 0.0001 RG 20 2 608.4 CGS 2 3 2.11E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.062E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 0.895 + TOX = 1E-07 NSUB = 1.003E+14 KP = 350 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5E-10 VJ = 0.7949 M = 0.4829 .MODEL DSUB D IS = 3.1E-08 N = 1.33 RS = 0.01273 BV = 13.56 + CJO = 8.2E-10 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/17 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN16M9UCA6 Spice Model ---------- .SUBCKT DMN16M9UCA6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001045 RS 30 3 0.001 RG 20 2 485.6 CGS 2 3 1.95E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9751 + TOX = 6E-008 NSUB = 1E+016 KP = 615.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.115E-009 N = 1.172 RS = 0.003108 BV = 14 CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN16M9UCA6 Spice Model v1.0 Last Revised 2017/7/13 *---------- DMN2002UFG Spice Model ---------- .SUBCKT DMN2002UFG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.01 CGS 2 3 3.232E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.505E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.09 + TOX = 1E-007 NSUB = 1E+014 KP = 293.4 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.938E-009 VJ = 0.5611 M = 0.5638 .MODEL DSUB D IS = 3.2E-009 N = 1.19 RS = 0.0005672 BV = 24.54 + CJO = 9.539E-010 VJ = 0.6 M = 0.6158 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN2004DMK Spice Model ---------- .SUBCKT DMN2004DMK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DMK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004DWK Spice Model ---------- .SUBCKT DMN2004DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DWK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004DWKQ Spice Model ---------- .SUBCKT DMN2004DWKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DWKQ Spice Model v1.0M Last Revised 2016/4/14 *---------- DMN2004K Spice Model ---------- .SUBCKT DMN2004K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004K Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004TK Spice Model ---------- .SUBCKT DMN2004TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004TK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004VK Spice Model ---------- .SUBCKT DMN2004VK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004VK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004WK Spice Model ---------- .SUBCKT DMN2004WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004WK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004WKQ Spice Model ---------- .SUBCKT DMN2004WKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004WKQ Spice Model v1.0 Last Revised 2016/9/21 *---------- DMN2005DLP4K Spice Model ---------- .SUBCKT DMN2005DLP4K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005DLP4K Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2005K Spice Model ---------- .SUBCKT DMN2005K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005K Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2005LP4K Spice Model ---------- .SUBCKT DMN2005LP4K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DDMN2005LP4K Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2005LPK Spice Model ---------- .SUBCKT DMN2005LPK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005LPK Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2005UFG Spice Model ---------- .SUBCKT DMN2005UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001735 RS 30 3 1E-006 RG 20 2 0.73 CGS 2 3 4.893E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.203E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8495 + TOX = 6E-008 NSUB = 1E+016 KP = 404.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.312E-009 VJ = 0.1775 M = 0.4588 .MODEL DSUB D IS = 7.261E-009 N = 1.052 RS = 0.006412 BV = 28 CJO = 5.538E-010 VJ = 0.3369 M = 0.6764 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005UFG Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN2005UFGQ Spice Model ---------- .SUBCKT DMN2005UFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001735 RS 30 3 1E-006 RG 20 2 0.73 CGS 2 3 4.893E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.203E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8495 + TOX = 6E-008 NSUB = 1E+016 KP = 404.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.312E-009 VJ = 0.1775 M = 0.4588 .MODEL DSUB D IS = 7.261E-009 N = 1.052 RS = 0.006412 BV = 28 CJO = 5.538E-010 VJ = 0.3369 M = 0.6764 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005UFGQ Spice Model v1.0 Last Revised 2017/8/9 *---------- DMN2005UPS Spice Model ---------- .SUBCKT DMN2005UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001735 RS 30 3 1E-006 RG 20 2 0.73 CGS 2 3 4.893E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.203E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8495 + TOX = 6E-008 NSUB = 1E+016 KP = 404.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.312E-009 VJ = 0.1775 M = 0.4588 .MODEL DSUB D IS = 7.261E-009 N = 1.052 RS = 0.006412 BV = 28 CJO = 5.538E-010 VJ = 0.3369 M = 0.6764 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005UPS Spice Model v1.0 Last Revised 2015/7/20 *---------- DMN2008LFU Spice Model ---------- .SUBCKT DMN2008LFU 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 6.043E-005 RS 30 3 0.001 RG 20 2 465 CGS 2 3 1.308E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9748 + TOX = 6E-008 NSUB = 1E+016 KP = 78.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.312E-010 VJ = 0.6606 M = 0.6 .MODEL DSUB D IS = 1.156E-009 N = 1.088 RS = 0.007059 BV = 26 CJO = 7.728E-010 VJ = 0.8 M = 0.6 TT=2.5E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2008LFU Spice Model v1.0M Last Revised 2016/5/5 *SRC=DMN2009LSS;DI_DMN2009LSS;MOSFETs N;Enh;20.0V 12.0A 8.00mohms Diodes Inc. MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2009LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 2.80m RS 40 3 1.20m RG 20 2 12.5 CGS 2 3 2.46n EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 663p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=60.0m + ETA=2.00m VTO=3.00 KP=274 .MODEL DCGD D (CJO=663p VJ=0.600 M=0.680 .MODEL DSUB D (IS=49.8n N=1.50 RS=37.5m BV=20.0 + CJO=1.28n VJ=0.800 M=0.420 TT=297n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN2009UCA4 Spice Model ---------- .SUBCKT DMN2009UCA4 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 SINGLE X2 10 40 50 SINGLE .ENDS *Single Device .SUBCKT DMN2009UCA4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00475 RS 30 3 0.0001 RG 20 2 274.2 CGS 2 3 1.678E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.43E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.25 + TOX = 1E-007 NSUB = 8E+015 KP = 500 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3E-010 VJ = 0.75 M = 0.38 .MODEL DSUB D IS = 1.2E-009 N = 1.15 RS = 0.085 BV = 23.65 + CJO = 1.65E-010 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/03/17 *---------- DMN2009UFDF Spice Model ---------- .SUBCKT DMN2009UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005 RS 30 3 0.001 RG 20 2 4.18 CGS 2 3 1.108E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1 + TOX = 6E-008 NSUB = 1E+016 KP = 332.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.648E-010 VJ = 0.7006 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.221 RS = 0.003822 BV = 24.65 + CJO = 2.385E-010 VJ = 0.6418 M = 0.6 TT = 6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2009UFDF Spice Model v1.0 Last Revised 2018/08/31 *---------- DMN2009USS Spice Model ---------- .SUBCKT DMN2009USS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005 RS 30 3 0.001 RG 20 2 4.18 CGS 2 3 1.108E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1 + TOX = 6E-008 NSUB = 1E+016 KP = 332.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.648E-010 VJ = 0.7006 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.221 RS = 0.003822 BV = 24.65 + CJO = 2.385E-010 VJ = 0.6418 M = 0.6 TT = 6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2009USS Spice Model v1.0 Last Revised 2018/08/31 *---------- DMN2010UDZ Spice Model ---------- .SUBCKT DMN2010UDZ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004472 RS 30 3 0.0001699 RG 20 2 1.09 CGS 2 3 2.367E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 + DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8879 + TOX = 6E-008 NSUB = 1E+016 KP = 350.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.902E-009 VJ = 0.3 M = 0.5 .MODEL DSUB D IS = 9.653E-009 N = 1.119 RS = 0.01253 BV = 26 CJO = 2.221E-010 VJ = 0.5 M = 0.5766 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2010UDZ Spice Model v1.0 Last Revised 2015/6/6 *---------- DMN2011UCA6-7-55 Spice Model ---------- .SUBCKT DMN2011UCA6_7_55 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00207 RS 30 3 0.0001 RG 20 2 1.56 CGS 2 3 2.126E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.769E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9279 + TOX = 1E-007 NSUB = 1E+014 KP = 491.3 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.363E-010 VJ = 0.8 M = 0.4534 .MODEL DSUB D IS = 3.308E-009 N = 1.154 RS = 0.006374 BV = 23.7 + CJO = 6.458E-010 VJ = 0.6577 M = 0.4271 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN2011UFDE Spice Model ---------- .SUBCKT DMN2011UFDE 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004817 RS 30 3 0.0001 RG 20 2 1.49 CGS 2 3 1.985E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.235E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5E+005 ETA = 0 VTO = 1.033 + TOX = 1E-007 NSUB = 1.006E+014 KP = 278.6 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.291E-009 VJ = 0.5 M = 0.5173 .MODEL DSUB D IS = 2.879E-009 N = 1.132 RS = 0.008854 BV = 22.18 + CJO = 2.127E-010 VJ = 0.6 M = 0.6808 XTI = 0 TT = 6.39E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN2011UFDE Spice Model ---------- .SUBCKT DMN2011UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 1.99E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 .MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 .MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 + BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2011UFDE Spice Model v1.0 Last Revised 2014/9/11 *---------- DMN2011UFDF Spice Model ---------- .SUBCKT DMN2011UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 1.99E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 .MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 .MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 + BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2011UFDF Spice Model v1.0 Last Revised 2014/9/11 *---------- DMN2011UFDF Spice Model ---------- .SUBCKT DMN2011UFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004817 RS 30 3 0.0001 RG 20 2 1.49 CGS 2 3 1.985E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.235E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5E+005 ETA = 0 VTO = 1.033 + TOX = 1E-007 NSUB = 1.006E+014 KP = 278.6 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.291E-009 VJ = 0.5 M = 0.5173 .MODEL DSUB D IS = 2.879E-009 N = 1.132 RS = 0.008854 BV = 22.18 + CJO = 2.127E-010 VJ = 0.6 M = 0.6808 XTI = 0 TT = 6.39E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN2011UFX Spice Model ---------- .SUBCKT DMN2011UFX 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 1.99E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 .MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 .MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 + BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2011UFX Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN2011UFX Spice Model ---------- .SUBCKT DMN2011UFX 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004817 RS 30 3 0.0001 RG 20 2 1.49 CGS 2 3 1.985E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.235E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5E+005 ETA = 0 VTO = 1.033 + TOX = 1E-007 NSUB = 1.006E+014 KP = 278.6 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.291E-009 VJ = 0.5 M = 0.5173 .MODEL DSUB D IS = 2.879E-009 N = 1.132 RS = 0.008854 BV = 22.18 + CJO = 2.127E-010 VJ = 0.6 M = 0.6808 XTI = 0 TT = 6.39E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN2011UTS Spice Model ---------- .SUBCKT DMN2011UTS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004817 RS 30 3 0.0001 RG 20 2 1.49 CGS 2 3 1.985E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.235E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5E+005 ETA = 0 VTO = 1.033 + TOX = 1E-007 NSUB = 1.006E+014 KP = 278.6 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.291E-009 VJ = 0.5 M = 0.5173 .MODEL DSUB D IS = 2.879E-009 N = 1.132 RS = 0.008854 BV = 22.18 + CJO = 2.127E-010 VJ = 0.6 M = 0.6808 XTI = 0 TT = 6.39E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN2011UTS Spice Model ---------- .SUBCKT DMN2011UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 1.99E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 .MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 .MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 + BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2011UTS Spice Model v1.0 Last Revised 2014/9/11 *---------- DMN2012UCA6 Spice Model ---------- .SUBCKT DMN2012UCA6 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 SINGLE X2 10 40 50 SINGLE .ENDS *Single Device .SUBCKT SINGLE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001566 RS 30 3 0.0001 RG 20 2 416.8 CGS 2 3 2.321E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.261 + TOX = 6E-008 NSUB = 1E+016 KP = 195 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.245E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.188E-010 N = 1.099 RS = 0.01489 BV = 27 + CJO = 4E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2012UCA6 Spice Model v1.0J Last Revised 2018/10/22 *DIODES_INC_SPICE_MODEL DMN2013UFDE *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Mar2104 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN2013UFDE 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 4E-3 RS 23 3 Rmod1 3E-3 RG 20 22 1.2 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 1200E-12 EGD 12 0 2 1 1 *REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1900E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .005 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=.9 TOX=4.5E-8 NSUB=1E+16 KP=190 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=200E-12 N=1 RS=0.0128 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.3e-3 TC2=1E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DMN2013UFDEQ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Mar2104 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN2013UFDEQ 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 4E-3 RS 23 3 Rmod1 3E-3 RG 20 22 1.2 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 1200E-12 EGD 12 0 2 1 1 *REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1900E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .005 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=.9 TOX=4.5E-8 NSUB=1E+16 KP=190 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=200E-12 N=1 RS=0.0128 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.3e-3 TC2=1E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DMN2013UFX *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Mar2104 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN2013UFDE 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 4E-3 RS 23 3 Rmod1 3E-3 RG 20 22 1.2 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 1200E-12 EGD 12 0 2 1 1 *REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1900E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .005 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=.9 TOX=4.5E-8 NSUB=1E+16 KP=190 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=200E-12 N=1 RS=0.0128 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.3e-3 TC2=1E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMN2015UFDE Spice Model ---------- .SUBCKT DMN2015UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005835 RS 30 3 0.001 RG 20 2 1.34 CGS 2 3 1.233E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.036 + TOX = 6E-008 NSUB = 1E+016 KP = 237.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.251E-009 VJ = 0.6 M = 0.6285 .MODEL DSUB D IS = 1.124E-009 N = 1.134 RS = 0.007534 BV = 25 CJO = 2.22E-010 VJ = 0.6 M = 0.6283 TT=5.78E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2015UFDE Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN2015UFDF Spice Model ---------- .SUBCKT DMN2015UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005835 RS 30 3 0.001 RG 20 2 1.34 CGS 2 3 1.233E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.036 + TOX = 6E-008 NSUB = 1E+016 KP = 237.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.251E-009 VJ = 0.6 M = 0.6285 .MODEL DSUB D IS = 1.124E-009 N = 1.134 RS = 0.007534 BV = 25 CJO = 2.22E-010 VJ = 0.6 M = 0.6283 TT=5.78E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2015UFDF Spice Model v1.0M Last Revised 2016/9/5 *---------- DMN2016LFG Spice Model ---------- .SUBCKT DMN2016LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01185 RS 30 3 0.001 RG 20 2 1.42 CGS 2 3 1.392E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01011 VTO = 1.042 + TOX = 6E-008 NSUB = 1E+016 KP = 143.4 KAPPA = 20.85 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 7.1E-010 N = 1.3 RS = 0.01232 BV = 25 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2016LFG Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN2016LHAB Spice Model ---------- .SUBCKT DMN2016LHAB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01185 RS 30 3 0.001 RG 20 2 1.42 CGS 2 3 1.392E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01011 VTO = 1.042 + TOX = 6E-008 NSUB = 1E+016 KP = 143.4 KAPPA = 20.85 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 7.1E-010 N = 1.3 RS = 0.01232 BV = 25 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2016LHAB Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN2016UFX Spice Model ---------- .SUBCKT DMN2016UFX 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0055 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.156E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.47E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9154 + TOX = 6E-008 NSUB = 1E+016 KP = 112.5 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.739E-010 VJ = 0.719 M = 0.6 .MODEL DSUB D IS = 2.124E-009 N = 1.173 RS = 0.009084 BV = 25.27 + CJO = 5E-011 VJ = 0.8 M = 0.6 TT = 4.765E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2016UFX Spice Model v1.0J Last Revised 2018/07/02 *---------- DMN2016UTS Spice Model ---------- .SUBCKT DMN2016UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01185 RS 30 3 0.001 RG 20 2 1.42 CGS 2 3 1.392E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01011 VTO = 1.042 + TOX = 6E-008 NSUB = 1E+016 KP = 143.4 KAPPA = 20.85 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 7.1E-010 N = 1.3 RS = 0.01232 BV = 25 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2016UTS Spice Model v1.0 Last Revised 2011/1/31 *---------- DMN2019UTS Spice Model ---------- .SUBCKT DMN2019UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2019UTS Spice Model v1.0 Last Revised 2015/7/3 *SYM=POWMOSN .SUBCKT DMN2020LSN D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=1943.229m RD 10 1 5m RS 30 3 4m RG 20 2 1.5 CGS 2 3 952p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 550p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.525 TOX=25n NSUB=5.3e16 .MODEL DCGD D CJO=550p VJ=0.350 M=0.410 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=116p VJ=0.120 M=0.380 .MODEL DLIM D IS=100U .ENDS *SYM=POWMOSN .SUBCKT DMN2020UFCL D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=1943.229m RD 10 1 5m RS 30 3 4m RG 20 2 1.5 CGS 2 3 952p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 550p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.525 TOX=25n NSUB=5.3e16 .MODEL DCGD D CJO=550p VJ=0.350 M=0.410 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=116p VJ=0.120 M=0.380 .MODEL DLIM D IS=100U .ENDS *---------- DMN2020UFCL Spice Model ---------- .SUBCKT DMN2020UFCL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01083 RS 30 3 0.001 RG 20 2 1.51 CGS 2 3 1.024E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.004367 VTO = 1.404 + TOX = 6E-008 NSUB = 5.26E+016 KP = 106.5 KAPPA = 22.88 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 1.112E-009 N = 1.26 RS = 0.01288 BV = 25 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2020UFCL Spice Model v1.0 Last Revised 2011/1/28 *---------- DMN2020UFDF Spice Model ---------- .SUBCKT DMN2020UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01083 RS 30 3 0.001 RG 20 2 1.51 CGS 2 3 1.024E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.004367 VTO = 1.404 + TOX = 6E-008 NSUB = 5.26E+016 KP = 106.5 KAPPA = 22.88 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 1.112E-009 N = 1.26 RS = 0.01288 BV = 25 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2020UFDF Spice Model v1.0 Last Revised 2011/1/28 *---------- DMN2022UCA4 Spice Model ---------- .SUBCKT DMN2022UCA4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005414 RS 30 3 0.0001 RG 20 2 271.2 CGS 2 3 1.335E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.463E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.604 + TOX = 1E-007 NSUB = 1E+014 KP = 493.6 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.91E-010 VJ = 0.8 M = 0.3817 .MODEL DSUB D IS = 8E-010 N = 1.171 RS = 0.03995 BV = 25.6 + CJO = 1.119E-010 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN2022UFDF Spice Model ---------- .SUBCKT DMN2022UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007593 RS 30 3 0.001 RG 20 2 95.7 CGS 2 3 1.702E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9482 + TOX = 6E-008 NSUB = 1E+016 KP = 146.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.774E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.408E-008 N = 1.274 RS = 0.01256 BV = 20 CJO = 5.835E-010 VJ = 0.8 M = 0.6 TT=1.49E-7 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2022UFDF Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN2022UNS Spice Model ---------- .SUBCKT DMN2022UNS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007593 RS 30 3 0.001 RG 20 2 95.7 CGS 2 3 1.702E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9482 + TOX = 6E-008 NSUB = 1E+016 KP = 146.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.774E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.408E-008 N = 1.274 RS = 0.01256 BV = 20 CJO = 5.835E-010 VJ = 0.8 M = 0.6 TT=1.49E-7 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2022UNS Spice Model v1.0 Last Revised 2015/11/2 *---------- DMN2023UCB4 Spice Model ---------- .SUBCKT DMN2023UCB4 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 Single X2 10 40 50 Single .ENDS *single channel .SUBCKT Single 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007802 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.306E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9022 + TOX = 6E-008 NSUB = 1E+016 KP = 202.3 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 9.462E-010 VJ = 1 M = 0.7 .MODEL DSUB D IS = 3.451E-008 N = 4.441E-010 RS = 1.473 BV = 65 CJO = 1.058E-011 VJ = 1 M = 0.7 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2023UCB4 Spice Model v1.0 Last Revised 2015/1/5 *---------- DMN2024LCA4 Spice Model ---------- .SUBCKT DMN2024LCA4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005825 RS 30 3 0.0001 RG 20 2 2.11 CGS 2 3 9.641E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.816E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.183 + TOX = 1E-007 NSUB = 1E+014 KP = 154.9 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.59E-010 VJ = 2 M = 0.2574 .MODEL DSUB D IS = 1.28E-009 N = 1.231 RS = 0.02479 BV = 22.75 + CJO = 6.8E-011 VJ = 0.9 M = 0.4298 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/07/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN2024U Spice Model ---------- .SUBCKT DMN2024 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01426 RS 30 3 0.001 RG 20 2 656.3 CGS 2 3 6.038E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8677 + TOX = 6E-008 NSUB = 1E+016 KP = 92 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.228 RS = 0.02133 BV = 26.73 + CJO = 1.8E-010 VJ = 0.8 M = 0.6 TT = 1.502E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2024U Spice Model v1.0J Last Revised 2018/06/27 *---------- DMN2024UDH Spice Model ---------- .SUBCKT DMN2024UDH 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01426 RS 30 3 0.001 RG 20 2 656.3 CGS 2 3 6.038E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8677 + TOX = 6E-008 NSUB = 1E+016 KP = 92 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.228 RS = 0.02133 BV = 26.73 + CJO = 1.8E-010 VJ = 0.8 M = 0.6 TT = 1.502E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2024UDH Spice Model v1.0J Last Revised 2018/06/27 *---------- DMN2024UFDF Spice Model ---------- .SUBCKT DMN2024UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01426 RS 30 3 0.001 RG 20 2 656.3 CGS 2 3 6.038E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8677 + TOX = 6E-008 NSUB = 1E+016 KP = 92 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.228 RS = 0.02133 BV = 26.73 + CJO = 1.8E-010 VJ = 0.8 M = 0.6 TT = 1.502E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2024UFDF Spice Model v1.0J Last Revised 2018/06/27 *---------- DMN2024UFU Spice Model ---------- .SUBCKT DMN2024UFU 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01426 RS 30 3 0.001 RG 20 2 656.3 CGS 2 3 6.038E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8677 + TOX = 6E-008 NSUB = 1E+016 KP = 92 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.228 RS = 0.02133 BV = 26.73 + CJO = 1.8E-010 VJ = 0.8 M = 0.6 TT = 1.502E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2024UFU Spice Model v1.0J Last Revised 2018/06/27 *---------- DMN2024UFX Spice Model ---------- .SUBCKT DMN2024UFX 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01426 RS 30 3 0.001 RG 20 2 656.3 CGS 2 3 6.038E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8677 + TOX = 6E-008 NSUB = 1E+016 KP = 92 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.228 RS = 0.02133 BV = 26.73 + CJO = 1.8E-010 VJ = 0.8 M = 0.6 TT = 1.502E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2024UFX Spice Model v1.0J Last Revised 2018/06/27 *---------- DMN2024UQ Spice Model ---------- .SUBCKT DMN2024UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01426 RS 30 3 0.001 RG 20 2 656.3 CGS 2 3 6.038E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8677 + TOX = 6E-008 NSUB = 1E+016 KP = 92 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.228 RS = 0.02133 BV = 26.73 + CJO = 1.8E-010 VJ = 0.8 M = 0.6 TT = 1.502E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2024UQ Spice Model v1.0J Last Revised 2019/06/27 *---------- DMN2024UTS Spice Model ---------- .SUBCKT DMN2024UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01426 RS 30 3 0.001 RG 20 2 656.3 CGS 2 3 6.038E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8677 + TOX = 6E-008 NSUB = 1E+016 KP = 92 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.228 RS = 0.02133 BV = 26.73 + CJO = 1.8E-010 VJ = 0.8 M = 0.6 TT = 1.502E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2024UTS Spice Model v1.0J Last Revised 2018/06/27 *---------- DMN2024UVT Spice Model ---------- .SUBCKT DMN2024UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01426 RS 30 3 0.001 RG 20 2 656.3 CGS 2 3 6.038E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8677 + TOX = 6E-008 NSUB = 1E+016 KP = 92 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.228 RS = 0.02133 BV = 26.73 + CJO = 1.8E-010 VJ = 0.8 M = 0.6 TT = 1.502E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2024UVT Spice Model v1.0J Last Revised 2018/06/27 *---------- DMN2024UVTQ Spice Model ---------- .SUBCKT DMN2024UVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01426 RS 30 3 0.001 RG 20 2 656.3 CGS 2 3 6.038E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8677 + TOX = 6E-008 NSUB = 1E+016 KP = 92 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.228 RS = 0.02133 BV = 26.73 + CJO = 1.8E-010 VJ = 0.8 M = 0.6 TT = 1.502E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2024UVTQ Spice Model v1.0J Last Revised 2018/06/27 *---------- DMN2025U Spice Model ---------- .SUBCKT DMN2025U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0135 RS 30 3 0.001 RG 20 2 3.85 CGS 2 3 3.408E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8283 + TOX = 6E-008 NSUB = 1E+016 KP = 61.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.864E-010 VJ = 0.6229 M = 0.659 .MODEL DSUB D IS = 1.658E-009 N = 1.132 RS = 0.04004 BV = 24 CJO = 1E-011 VJ = 0.6 M = 0.748 TT=4E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2025U Spice Model v1.0M Last Revised 2017/12/27 *---------- DMN2025UFDB Spice Model ---------- .SUBCKT DMN2025UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0135 RS 30 3 0.001 RG 20 2 3.85 CGS 2 3 3.408E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8283 + TOX = 6E-008 NSUB = 1E+016 KP = 61.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.864E-010 VJ = 0.6229 M = 0.659 .MODEL DSUB D IS = 1.658E-009 N = 1.132 RS = 0.04004 BV = 24 CJO = 1E-011 VJ = 0.6 M = 0.748 TT=4E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2025UFDB Spice Model v1.0M Last Revised 2017/12/27 *---------- DMN2025UFDF Spice Model ---------- .SUBCKT DMN2025UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0135 RS 30 3 0.001 RG 20 2 3.85 CGS 2 3 3.408E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8283 + TOX = 6E-008 NSUB = 1E+016 KP = 61.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.864E-010 VJ = 0.6229 M = 0.659 .MODEL DSUB D IS = 1.658E-009 N = 1.132 RS = 0.04004 BV = 24 CJO = 1E-011 VJ = 0.6 M = 0.748 TT=4E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2025UFDF Spice Model v1.0M Last Revised 2017/12/27 *---------- DMN2026UVT Spice Model ---------- .SUBCKT DMN2026UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2026UVT Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN2027UPS Spice Model ---------- .SUBCKT DMN2027UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007309 RS 30 3 1E-008 RG 20 2 1.5 CGS 2 3 9.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.095E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.335 + TOX = 6E-008 NSUB = 1E+016 KP = 107.7 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.082E-010 VJ = 0.6 M = 0.5 .MODEL DSUB D IS = 3.253E-010 N = 1.168 RS = 0.01176 BV = 28 CJO = 2.221E-010 VJ = 0.6 M = 0.6492 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2027UPS Spice Model v1.0 Last Revised 2015/7/27 *---------- DMN2027USS Spice Model ---------- .SUBCKT DMN2027USS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007309 RS 30 3 1E-008 RG 20 2 1.5 CGS 2 3 9.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.095E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.335 + TOX = 6E-008 NSUB = 1E+016 KP = 107.7 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.082E-010 VJ = 0.6 M = 0.5 .MODEL DSUB D IS = 3.253E-010 N = 1.168 RS = 0.01176 BV = 28 CJO = 2.221E-010 VJ = 0.6 M = 0.6492 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2027USS Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN2028UFDF Spice Model ---------- .SUBCKT DMN2028UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2028UFDF Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN2028UFDH Spice Model ---------- .SUBCKT DMN2028UFDH 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2028UFDH Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN2028UFU Spice Model ---------- .SUBCKT DMN2028UFU 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2028UFU Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN2028USS Spice Model ---------- .SUBCKT DMN2028USS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2028USS Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN2028UVT Spice Model ---------- .SUBCKT DMN2028UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2028UVT Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN2029USD Spice Model ---------- .SUBCKT DMN2029USD D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0098 RS 30 3 0.001 RG 20 2 1.21 CGS 2 3 1.059E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 1.35 TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.882E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.455E-011 N = 1.091 RS = 0.01749 BV = 22.32 CJO = 5.04E-011 VJ = 0.7999 M = 0.6 TT = 3.73 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2029USD Spice Model v1.0W Last Revised 2018/11/16 *---------- DMN2029UVT Spice Model ---------- .SUBCKT DMN2029UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01268 RS 30 3 0.001 RG 20 2 627.9 CGS 2 3 6.093E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.13E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8579 + TOX = 6E-008 NSUB = 1E+016 KP = 79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.651E-010 VJ = 0.7533 M = 0.6 .MODEL DSUB D IS = 2.701E-009 N = 1.25 RS = 0.01313 BV = 27.02 + CJO = 1.2E-010 VJ = 0.8 M = 0.6 TT = 1.225E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2029UVT Spice Model v1.0 Last Revised 2018/08/24 *---------- DMN2030UCA4 Spice Model ---------- .SUBCKT DMN2030UCA4 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 SINGLE X2 10 40 50 SINGLE .ENDS *Single Device .SUBCKT DMN2030UCA4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0084 RS 30 3 0.0001 RG 20 2 339.4 CGS 2 3 4.68E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.4 + TOX = 1E-007 NSUB = 1E+015 KP = 110 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.5E-010 VJ = 0.75 M = 0.38 .MODEL DSUB D IS = 3E-010 N = 1.18 RS = 0.058 BV = 25.21 + CJO = 5E-011 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/03/16 *---------- DMN2036UCB4 Spice Model ---------- .SUBCKT DMN2036UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02713 RS 30 3 0.001 RG 20 2 361.7 CGS 2 3 1.154E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.55E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.264 + TOX = 6E-008 NSUB = 1E+016 KP = 122.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.762E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.222E-010 N = 1.133 RS = 0.09706 BV = 27 CJO = 6E-011 VJ = 0.8 M = 0.6 TT = 3.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2036UCB4 Spice Model v1.0M Last Revised 2017/10/24 *---------- DMN2040LTS Spice Model ---------- .SUBCKT DMN2040LTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2040LTS Spice Model v1.0 Last Revised 2010/11/18 *---------- DMN2040U Spice Model ---------- .SUBCKT DMN2040U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0164 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 5.807E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9204 + TOX = 6E-008 NSUB = 1E+016 KP = 100.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.638E-010 VJ = 0.6107 M = 0.6 .MODEL DSUB D IS = 1.055E-008 N = 1.267 RS = 0.03381 BV = 24 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 5.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2040U Spice Model v1.0M Last Revised 2018/2/8 *---------- DMN2040UQ Spice Model ---------- .SUBCKT DMN2040UQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01713 RS 30 3 0.0001 RG 20 2 1.17 CGS 2 3 5.233E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.51E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.01 + TOX = 1E-007 NSUB = 6.457E+014 KP = 88.79 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.943E-010 VJ = 0.5 M = 0.5958 .MODEL DSUB D IS = 1.501E-010 N = 1.181 RS = 0.01156 BV = 24.85 + CJO = 4.926E-011 VJ = 0.6 M = 0.5925 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/15 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN2040UVT Spice Model ---------- .SUBCKT DMN2040UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0164 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 5.807E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9204 + TOX = 6E-008 NSUB = 1E+016 KP = 100.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.638E-010 VJ = 0.6107 M = 0.6 .MODEL DSUB D IS = 1.055E-008 N = 1.267 RS = 0.03381 BV = 24 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 5.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2040UVT Spice Model v1.0M Last Revised 2018/8/8 *---------- DMN2041L Spice Model ---------- .SUBCKT DMN2041L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2041L Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN2041LSD Spice Model ---------- .SUBCKT DMN2041LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2041LSD Spice Model v1.0 Last Revised 2010/11/18 *---------- DMN2041UFDB Spice Model ---------- .SUBCKT DMN2041UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2041UFDB Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN2041UVT Spice Model ---------- .SUBCKT DMN2041UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0164 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 5.807E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9204 + TOX = 6E-008 NSUB = 1E+016 KP = 100.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.638E-010 VJ = 0.6107 M = 0.6 .MODEL DSUB D IS = 1.055E-008 N = 1.267 RS = 0.03381 BV = 24 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 5.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2041UVT Spice Model v1.0M Last Revised 2019/8/8 *---------- DMN2044UCB4 Spice Model ---------- .SUBCKT DMN2044UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01819 RS 30 3 0.001 RG 20 2 0.98 CGS 2 3 9.562E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8805 + TOX = 6E-008 NSUB = 1E+016 KP = 66.63 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.191E-010 VJ = 0.6 M = 0.6141 .MODEL DSUB D IS = 1.072E-009 N = 1.11 RS = 0.0616 BV = 22 CJO = 6E-011 VJ = 0.8 M = 0.6 TT = 3.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2044UCB4 Spice Model v1.0M Last Revised 2017/12/1 *---------- DMN2046U Spice Model ---------- .SUBCKT DMN2046U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0283 RS 30 3 0.001 RG 20 2 62.39 CGS 2 3 2.599E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8493 + TOX = 6E-008 NSUB = 1E+016 KP = 26.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.821E-010 VJ = 0.6 M = 0.6077 .MODEL DSUB D IS = 9.26E-009 N = 1.865 RS = 0.007806 BV = 20 CJO = 2.22E-010 VJ = 0.6 M = 0.7301 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2046U Spice Model v1.0 Last Revised 2015/12/10 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN2046UVT Spice Model ---------- .SUBCKT DMN2046UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0283 RS 30 3 0.001 RG 20 2 62.39 CGS 2 3 2.599E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8493 + TOX = 6E-008 NSUB = 1E+016 KP = 26.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.821E-010 VJ = 0.6 M = 0.6077 .MODEL DSUB D IS = 9.26E-009 N = 1.865 RS = 0.007806 BV = 20 CJO = 2.22E-010 VJ = 0.6 M = 0.7301 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2046UVT Spice Model v1.0 Last Revised 2022/12/10 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN2046UW Spice Model ---------- .SUBCKT DMN2046UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0283 RS 30 3 0.001 RG 20 2 62.39 CGS 2 3 2.599E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8493 + TOX = 6E-008 NSUB = 1E+016 KP = 26.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.821E-010 VJ = 0.6 M = 0.6077 .MODEL DSUB D IS = 9.26E-009 N = 1.865 RS = 0.007806 BV = 20 CJO = 2.22E-010 VJ = 0.6 M = 0.7301 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2046UW Spice Model v1.0 Last Revised 2023/12/10 *SRC=DMN2050L;DI_DMN2050L;MOSFETs N;Enh;20.0V 5.90A 29.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2050L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 12.8m RS 40 3 1.72m RG 20 2 25.4 CGS 2 3 415p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 825p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.83m VTO=1.40 KP=75.8 .MODEL DCGD D (CJO=825p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.5n N=1.50 RS=25.4m BV=20.0 + CJO=215p VJ=0.800 M=0.420 TT=234n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN2050LFDB Spice Model ---------- .SUBCKT DMN2050LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01936 RS 30 3 0.001 RG 20 2 2.08 CGS 2 3 3.397E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8119 TOX = 6E-008 NSUB = 1E+016 KP = 34.81 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.458E-010 VJ = 0.6234 M = 0.6 .MODEL DSUB D IS = 1.692E-009 N = 1.092 RS = 0.08289 BV = 24 CJO = 1E-015 VJ = 0.6 M = 0.7957 TT=4.3E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2050LFDB Spice Model v1.0M Last Revised 2016/3/30 *SRC=DMN2050LQ;DI_DMN2050LQ;MOSFETs N;Enh;20.0V 5.90A 29.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2050LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 12.8m RS 40 3 1.72m RG 20 2 25.4 CGS 2 3 415p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 825p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.83m VTO=1.40 KP=75.8 .MODEL DCGD D (CJO=825p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.5n N=1.50 RS=25.4m BV=20.0 + CJO=215p VJ=0.800 M=0.420 TT=234n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN2053U Spice Model ---------- .SUBCKT DMN2053U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2053U Spice Model v1.0M Last Revised 2018/2/5 *---------- DMN2053UFDB Spice Model ---------- .SUBCKT DMN2053UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2053UFDB Spice Model v1.0M Last Revised 2018/6/5 *---------- DMN2053UFDBQ Spice Model ---------- .SUBCKT DMN2053UFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2053UFDBQ Spice Model v1.0M Last Revised 2018/6/5 *---------- DMN2053UQ Spice Model ---------- .SUBCKT DMN2053UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2053UQ Spice Model v1.0M Last Revised 2018/2/5 *---------- DMN2053UVT Spice Model ---------- .SUBCKT DMN2053UVT D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01961 RS 30 3 0.001 RG 20 2 4.1 D4 2 20 Dc CGS 2 3 3.405E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.85E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8756 + TOX = 6E-008 NSUB = 1E+016 KP = 30 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.818E-009 N = 1.342 RS = 0.02558 BV = 28.53 + CJO = 9E-011 VJ = 0.8 M = 0.6 TT = 2.99E-009 .MODEL DLIM D IS = 0.0001 .MODEL Dc D IS = 1E-0010 N = 0.19 RS = 0.01 BV = 12 .ENDS *Diodes DMN2053UVT Spice Model v1.0M Last Revised 2018/09/25 *---------- DMN2053UVTQ Spice Model ---------- .SUBCKT DMN2053UVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2053UVTQ Spice Model v1.0M Last Revised 2018/6/5 *---------- DMN2053UW Spice Model ---------- .SUBCKT DMN2053UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2053UW Spice Model v1.0M Last Revised 2018/6/5 *---------- DMN2053UWQ Spice Model ---------- .SUBCKT DMN2053UWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01959 RS 30 3 0.001 RG 20 2 3.61 CGS 2 3 3.675E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9393 + TOX = 6E-008 NSUB = 1E+016 KP = 37.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.015E-010 VJ = 0.7935 M = 0.6 .MODEL DSUB D IS = 3.075E-010 N = 1.17 RS = 0.03137 BV = 26 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 3.4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2053UWQ Spice Model v1.0M Last Revised 2018/6/5 *---------- DMN2055U Spice Model ---------- .SUBCKT DMN2055U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02046 RS 30 3 0.001 RG 20 2 3.64 CGS 2 3 3.609E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8049 + TOX = 6E-008 NSUB = 1E+016 KP = 53.97 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.673E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.03E-010 N = 1.099 RS = 0.05895 BV = 27 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2055U Spice Model v1.0M Last Revised 2018/2/2 *---------- DMN2055UQ Spice Model ---------- .SUBCKT DMN2055UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02046 RS 30 3 0.001 RG 20 2 3.64 CGS 2 3 3.609E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8049 + TOX = 6E-008 NSUB = 1E+016 KP = 53.97 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.673E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.03E-010 N = 1.099 RS = 0.05895 BV = 27 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2055UQ Spice Model v1.0M Last Revised 2018/2/2 *---------- DMN2055UW Spice Model ---------- .SUBCKT DMN2055UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02046 RS 30 3 0.001 RG 20 2 3.64 CGS 2 3 3.609E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8049 + TOX = 6E-008 NSUB = 1E+016 KP = 53.97 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.673E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.03E-010 N = 1.099 RS = 0.05895 BV = 27 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2055UW Spice Model v1.0M Last Revised 2020/2/2 *---------- DMN2055UWQ Spice Model ---------- .SUBCKT DMN2055UWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02046 RS 30 3 0.001 RG 20 2 3.64 CGS 2 3 3.609E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8049 + TOX = 6E-008 NSUB = 1E+016 KP = 53.97 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.673E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.03E-010 N = 1.099 RS = 0.05895 BV = 27 CJO = 5E-011 VJ = 0.6 M = 0.748 TT = 4E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2055UWQ Spice Model v1.0M Last Revised 2020/2/2 *---------- DMN2056U Spice Model ---------- .SUBCKT DMN2056U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01796 RS 30 3 0.001 RG 20 2 2.6 CGS 2 3 3.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7861 + TOX = 6E-008 NSUB = 1E+016 KP = 44.43 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.836E-010 VJ = 0.1383 M = 0.3956 .MODEL DSUB D IS = 9.074E-010 N = 1.126 RS = 0.07299 BV = 25 CJO = 2.226E-010 VJ = 0.113 M = 0.6916 TT=2.3E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2056U Spice Model v1.0M Last Revised 2016/6/15 *---------- DMN2058U Spice Model ---------- .SUBCKT DMN2058U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01969 RS 30 3 0.001 RG 20 2 3.1 CGS 2 3 2.453E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7391 + TOX = 6E-008 NSUB = 1E+016 KP = 34.05 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.179E-010 VJ = 0.2219 M = 0.4485 .MODEL DSUB D IS = 5.374E-009 N = 1.272 RS = 0.06325 BV = 26 CJO = 2.226E-010 VJ = 0.113 M = 0.6916 TT=2.7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2058U Spice Model v1.0M Last Revised 2016/6/15 *---------- DMN2058UW Spice Model ---------- .SUBCKT DMN2058UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01969 RS 30 3 0.001 RG 20 2 3.1 CGS 2 3 2.453E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7391 + TOX = 6E-008 NSUB = 1E+016 KP = 34.05 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.179E-010 VJ = 0.2219 M = 0.4485 .MODEL DSUB D IS = 5.374E-009 N = 1.272 RS = 0.06325 BV = 26 CJO = 2.226E-010 VJ = 0.113 M = 0.6916 TT=2.7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2058UW Spice Model v1.0M Last Revised 2016/6/15 *DIODES_INC_SPICE_MODEL DMN2065UW *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Apr2013 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN2065UW 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 33E-3 RS 23 3 Rmod1 15E-3 RG 20 22 8 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 220E-12 EGD 12 0 2 1 1 *REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 760E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=.92 TOX=4.5E-8 NSUB=1E+16 KP=75 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.1E-12 N=1.02 RS=0.06 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMN2065UWQ Spice Model ---------- .SUBCKT DMN2065UWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01692 RS 30 3 0.001 RG 20 2 2.59 CGS 2 3 3.316E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 0.8496 + TOX = 6E-008 NSUB = 1E+016 KP = 33.27 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.676E-010 VJ = 0.6 M = 0.6002 .MODEL DSUB D IS = 1.559E-008 N = 1.278 RS = 0.07423 BV = 23 CJO = 3.241E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2065UWQ Spice Model v1.0 Last Revised 2017/6/6 *---------- DMN2075U Spice Model ---------- .SUBCKT DMN2075U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03596 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 5.381E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9505 + TOX = 6E-008 NSUB = 1E+016 KP = 55.47 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.128E-010 VJ = 0.6 M = 0.6001 .MODEL DSUB D IS = 4.456E-010 N = 1.107 RS = 0.06698 BV = 22 CJO = 1E-015 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2075U Spice Model v1.0M Last Revised 2016/4/7 *---------- DMN2075UDW Spice Model ---------- .SUBCKT DMN2075UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03596 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 5.381E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9505 + TOX = 6E-008 NSUB = 1E+016 KP = 55.47 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.128E-010 VJ = 0.6 M = 0.6001 .MODEL DSUB D IS = 4.456E-010 N = 1.107 RS = 0.06698 BV = 22 CJO = 1E-015 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2075UDW Spice Model v1.0M Last Revised 2016/4/7 *---------- DMN2080UCB4 Spice Model ---------- .SUBCKT DMN2080UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03895 RS 30 3 0.001 RG 20 2 923.5 CGS 2 3 5.087E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.03E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9628 + TOX = 6E-008 NSUB = 1E+016 KP = 58.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.094E-010 VJ = 0.6 M = 0.6337 .MODEL DSUB D IS = 2.479E-010 N = 1.126 RS = 0.09698 BV = 21 CJO = 8E-011 VJ = 0.7125 M = 0.6 TT = 2.5E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2080UCB4 Spice Model v1.0M Last Revised 2017/8/15 *---------- DMN2100UDM Spice Model ---------- .SUBCKT DMN2100UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2100UDM Spice Model v1.0 Last Revised 2013/6/28 *SRC=DMN2112SN;DI_DMN2112SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSFET .MODEL DI_DMN2112SN NMOS( LEVEL=1 VTO=1.20 KP=35.3 GAMMA=1.49 + PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m + IS=600f PB=0.800 MJ=0.460 CBD=248p + CBS=298p CGSO=540n CGDO=450n CGBO=1.21u ) * -- Assumes default L=100U W=100U -- *SRC=DMN2114SN;DI_DMN2114SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSFET .MODEL DI_DMN2114SN NMOS( LEVEL=1 VTO=1.40 KP=21.8 GAMMA=1.74 + PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m + IS=600f PB=0.800 MJ=0.460 CBD=248p + CBS=298p CGSO=540n CGDO=450n CGBO=810n ) * -- Assumes default L=100U W=100U -- *---------- DMN2120UFCL Spice Model ---------- .SUBCKT DMN2120UFCL 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.029 RS 30 3 0.001 RG 20 2 2.54 CGS 2 3 1.15E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.74E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7375 + TOX = 6E-008 NSUB = 1E+016 KP = 16 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 8.237E-011 VJ = 0.5 M = 0.4614 .MODEL DSUB D IS = 1.645E-007 N = 1.849 RS = 0.01788 BV = 25.15 + CJO = 2.065E-011 VJ = 0.6 M = 0.3998 TT = 2.19E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/07/29 *---------- DMN21D1UDA Spice Model ---------- .SUBCKT DMN21D1UDA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3366 RS 30 3 0.001 RG 20 2 216.8 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 + TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN21D1UDA Spice Model v1.0M Last Revised 2016/11/29 *---------- DMN21D2UFB Spice Model ---------- .SUBCKT DMN21D2UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3846 RS 30 3 0.001 RG 20 2 200 CGS 2 3 2.452E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9675 + TOX = 6E-008 NSUB = 1E+016 KP = 2.2 U0 = 400 KAPPA = 38 .MODEL DCGD D CJO = 1.4E-011 VJ = 0.207 M = 0.3876 .MODEL DSUB D IS = 2.291E-010 N = 1.262 RS = 1.472 + BV = 65 CJO = 3.241E-012 VJ = 0.2008 M = 0.2 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN21D2UFB Spice Model v1.0 Last Revised 2012/5/3 *SRC=DMN2215UDM;DI_DMN2215UDM;MOSFETs N;Enh;20.0V 2.00A 0.100ohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2215UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 46.5m RS 40 3 3.50m RG 20 2 75.0 CGS 2 3 158p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 211p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=1.00 KP=25.9Meg .MODEL DCGD D (CJO=211p VJ=0.600 M=0.680 .MODEL DSUB D (IS=8.30n N=1.50 RS=0.175 BV=20.0 + CJO=65.6p VJ=0.800 M=0.420 TT=174n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN2230U;DI_DMN2230U;MOSFETs N;Enh;20.0V 2.00A 0.110ohms Diodes Inc MOSFET .MODEL DI_DMN2230U NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24 + PHI=.75 LAMBDA=127u RD=15.4m RS=15.4m + IS=1.00p PB=0.800 MJ=0.460 CBD=46.4p + CBS=55.6p CGSO=360n CGDO=300n CGBO=1.22u ) * -- Assumes default L=100U W=100U -- *---------- DMN2230UQ Spice Model ---------- .SUBCKT DMN2230UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.05454 RS 30 3 0.001 RG 20 2 59.7 CGS 2 3 1.5E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9509 + TOX = 6E-008 NSUB = 1E+016 KP = 15.65 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.13E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.851E-009 N = 1.329 RS = 0.1207 BV = 20 CJO = 2.22E-010 VJ = 0.6 M = 0.7957 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2230UQ Spice Model v1.0 Last Revised 2016/01/11 *---------- DMN2250UFB Spice Model ---------- .SUBCKT DMN2250UFB D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1135 RS 30 3 0.001 RG 20 2 87.1 CGS 2 3 7.831E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6909 + TOX = 6E-008 NSUB = 1E+016 KP = 12 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.846E-011 VJ = 0.6218 M = 0.6 .MODEL DSUB D IS = 3.73E-009 N = 1.22 RS = 0.8801 BV = 22.72 CJO = 1E-012 VJ = 0.6257 M = 0.601 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2250UFB Spice Model v1.0W Last Revised 2018/11/22 *---------- DMN22M5UCA10 Spice Model ---------- .SUBCKT DMN22M5UCA10 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 SINGLE X2 10 40 50 SINGLE .ENDS *Single Device .SUBCKT SINGLE 10 20 30 * TERMINALS: D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00078 RS 30 3 0.0001 RG 20 2 281.7 CGS 2 3 3.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.05 + TOX = 6E-008 NSUB = 1E+016 KP = 560 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.052E-009 VJ = 0.9 M = 0.6 .MODEL DSUB D IS = 2.636E-008 N = 1.545 RS = 0.001045 BV = 25.1 + CJO = 7.7E-010 VJ = 0.9 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2021/11/29 *---------- DMN22M5UFG Spice Model ---------- .SUBCKT DMN22M5UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0005 RS 30 3 0.0001 RG 20 2 0.99 CGS 2 3 3.416E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.98 + TOX = 6E-008 NSUB = 1E+016 KP = 435 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 2.422E-009 VJ = 0.7328 M = 0.6 .MODEL DSUB D IS = 1.355E-009 N = 1.114 RS = 0.0006452 BV = 25.37 + CJO = 8E-010 VJ = 0.8 M = 0.6 TT = 1.166E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN22M5UFG Spice Model v1.0J Last Revised 2018/01/02 *---------- DMN2300U Spice Model ---------- .SUBCKT DMN2300U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1046 RS 30 3 0.001 RG 20 2 68.51 CGS 2 3 6.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.06E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 + TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2300U Spice Model v1.0M Last Revised 2017/3/6 *---------- DMN2300UFB Spice Model ---------- .SUBCKT DMN2300UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1046 RS 30 3 0.001 RG 20 2 68.51 CGS 2 3 6.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.06E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 + TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2300UFB Spice Model v1.0M Last Revised 2017/3/6 *---------- DMN2300UFB4 Spice Model ---------- .SUBCKT DMN2300UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1046 RS 30 3 0.001 RG 20 2 68.51 CGS 2 3 6.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.06E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 + TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2300UFB4 Spice Model v1.0M Last Revised 2017/3/6 *---------- DMN2300UFD Spice Model ---------- .SUBCKT DMN2300UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1046 RS 30 3 0.001 RG 20 2 68.51 CGS 2 3 6.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.06E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 + TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2300UFD Spice Model v1.0M Last Revised 2017/3/6 *---------- DMN2300UFL4 Spice Model ---------- .SUBCKT DMN2300UFL4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1046 RS 30 3 0.001 RG 20 2 68.51 CGS 2 3 6.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.06E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 + TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2300UFL4 Spice Model v1.0M Last Revised 2017/3/6 *---------- DMN2300UFL4Q Spice Model ---------- .SUBCKT DMN2300UFL4Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1046 RS 30 3 0.001 RG 20 2 68.51 CGS 2 3 6.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.06E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 + TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2300UFL4Q Spice Model v1.0M Last Revised 2017/3/6 *---------- DMN2310U Spice Model ---------- .SUBCKT DMN2310U 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.09 RS 30 3 0.0001 RG 20 2 1.42 CGS 2 3 3.239E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.11E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8691 + TOX = 1E-007 NSUB = 1E+015 KP = 6.05 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.816E-011 VJ = 0.5 M = 0.3657 .MODEL DSUB D IS = 1E-008 N = 1.543 RS = 0.0998 BV = 24.32 + CJO = 1.559E-011 VJ = 0.6 M = 0.3992 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/16 *---------- DMN2310UFB4 Spice Model ---------- .SUBCKT DMN2310UFB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.09 RS 30 3 0.0001 RG 20 2 1.42 CGS 2 3 3.239E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.11E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8691 + TOX = 1E-007 NSUB = 1E+015 KP = 6.05 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.816E-011 VJ = 0.5 M = 0.3657 .MODEL DSUB D IS = 1E-008 N = 1.543 RS = 0.0998 BV = 24.32 + CJO = 1.559E-011 VJ = 0.6 M = 0.3992 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2020/12/16 *---------- DMN2310UFD Spice Model ---------- .SUBCKT DMN2310UFD 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.09 RS 30 3 0.0001 RG 20 2 1.42 CGS 2 3 3.239E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.11E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8691 + TOX = 1E-007 NSUB = 1E+015 KP = 6.05 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.816E-011 VJ = 0.5 M = 0.3657 .MODEL DSUB D IS = 1E-008 N = 1.543 RS = 0.0998 BV = 24.32 + CJO = 1.559E-011 VJ = 0.6 M = 0.3992 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2020/12/16 *---------- DMN2310UT Spice Model ---------- .SUBCKT DMN2310UT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.09 RS 30 3 0.0001 RG 20 2 1.42 CGS 2 3 3.239E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.11E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8691 + TOX = 1E-007 NSUB = 1E+015 KP = 6.05 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.816E-011 VJ = 0.5 M = 0.3657 .MODEL DSUB D IS = 1E-008 N = 1.543 RS = 0.0998 BV = 24.32 + CJO = 1.559E-011 VJ = 0.6 M = 0.3992 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2020/12/16 *---------- DMN2310UTQ Spice Model ---------- .SUBCKT DMN2310UTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.09 RS 30 3 0.0001 RG 20 2 1.42 CGS 2 3 3.239E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.11E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8691 + TOX = 1E-007 NSUB = 1E+015 KP = 6.05 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.816E-011 VJ = 0.5 M = 0.3657 .MODEL DSUB D IS = 1E-008 N = 1.543 RS = 0.0998 BV = 24.32 + CJO = 1.559E-011 VJ = 0.6 M = 0.3992 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2020/12/16 *---------- DMN2310UW Spice Model ---------- .SUBCKT DMN2310UW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.09 RS 30 3 0.0001 RG 20 2 1.42 CGS 2 3 3.239E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.11E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8691 + TOX = 1E-007 NSUB = 1E+015 KP = 6.05 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.816E-011 VJ = 0.5 M = 0.3657 .MODEL DSUB D IS = 1E-008 N = 1.543 RS = 0.0998 BV = 24.32 + CJO = 1.559E-011 VJ = 0.6 M = 0.3992 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/16 *---------- DMN2310UWQ Spice Model ---------- .SUBCKT DMN2310UWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.09 RS 30 3 0.0001 RG 20 2 1.42 CGS 2 3 3.239E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.11E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8691 + TOX = 1E-007 NSUB = 1E+015 KP = 6.05 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.816E-011 VJ = 0.5 M = 0.3657 .MODEL DSUB D IS = 1E-008 N = 1.543 RS = 0.0998 BV = 24.32 + CJO = 1.559E-011 VJ = 0.6 M = 0.3992 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/16 *---------- DMN2320UFB4 Spice Model ---------- .SUBCKT DMN2320UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1046 RS 30 3 0.001 RG 20 2 68.51 CGS 2 3 6.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.06E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 + TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2320UFB4 Spice Model v1.0M Last Revised 2017/3/6 *---------- DMN2400UFB4 Spice Model ---------- .SUBCKT DMN2400UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UFB4 Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2400UFD Spice Model ---------- .SUBCKT DMN2400UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UFD Spice Model v1.0 Last Revised 2012/11/28 *---------- DMN2400UFDQ Spice Model ---------- .SUBCKT DMN2400UFDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UFDQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN2400UV Spice Model ---------- .SUBCKT DMN2400UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UV Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2450UFB4 Spice Model ---------- .SUBCKT DMN2450UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2738 RS 30 3 0.001 RG 20 2 85.4 CGS 2 3 9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 0.9919 +TOX = 6E-008 NSUB = 1E+016 KP = 5.914 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 8E-011 VJ = 0.6 M = 0.7362 .MODEL DSUB D IS = 1.244E-009 N = 1.349 RS = 0.6867 BV = 24 CJO = 1.445E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2450UFB4 Spice Model v1.0 Last Revised 2017/12/18 *---------- DMN2450UFB4Q Spice Model ---------- .SUBCKT DMN2450UFB4Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2738 RS 30 3 0.001 RG 20 2 85.4 CGS 2 3 9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 0.9919 +TOX = 6E-008 NSUB = 1E+016 KP = 5.914 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 8E-011 VJ = 0.6 M = 0.7362 .MODEL DSUB D IS = 1.244E-009 N = 1.349 RS = 0.6867 BV = 24 CJO = 1.445E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2450UFB4Q Spice Model v1.0 Last Revised 2020/12/18 *---------- DMN2450UFD Spice Model ---------- .SUBCKT DMN2450UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2738 RS 30 3 0.001 RG 20 2 85.4 CGS 2 3 9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 0.9919 +TOX = 6E-008 NSUB = 1E+016 KP = 5.914 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 8E-011 VJ = 0.6 M = 0.7362 .MODEL DSUB D IS = 1.244E-009 N = 1.349 RS = 0.6867 BV = 24 CJO = 1.445E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2450UFD Spice Model v1.0 Last Revised 2017/12/18 *---------- DMN2451UFB4 Spice Model ---------- .SUBCKT DMN2451UFB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 86.15 CGS 2 3 2.9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.15E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.83 + TOX = 1E-007 NSUB = 1E+015 KP = 2.4 U0 = 250 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.8E-011 VJ = 0.52 M = 0.6008 .MODEL DSUB D IS = 1.1E-009 N = 1.47 RS = 0.095 BV = 24.1 + CJO = 3.8E-012 VJ = 0.75 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/27 *---------- DMN2451UFB4Q Spice Model ---------- .SUBCKT DMN2451UFB4Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 86.15 CGS 2 3 2.9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.15E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.83 + TOX = 1E-007 NSUB = 1E+015 KP = 2.4 U0 = 250 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.8E-011 VJ = 0.52 M = 0.6008 .MODEL DSUB D IS = 1.1E-009 N = 1.47 RS = 0.095 BV = 24.1 + CJO = 3.8E-012 VJ = 0.75 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/27 *---------- DMN2451UFDQ Spice Model ---------- .SUBCKT DMN2451UFDQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 84.42 CGS 2 3 2.9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.03E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.83 + TOX = 1E-007 NSUB = 1E+015 KP = 2.4 U0 = 250 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.8E-011 VJ = 0.52 M = 0.6008 .MODEL DSUB D IS = 7.6E-010 N = 1.49 RS = 0.115 BV = 24.07 + CJO = 3.8E-012 VJ = 0.75 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/07/02 *---------- DMN24H11DS Spice Model ---------- .SUBCKT DMN24H11DS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 4.188 RS 30 3 0.001 RG 20 2 17.89 CGS 2 3 6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.6 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5961 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.416E-011 VJ = 0.8 M = 0.7743 .MODEL DSUB D IS = 3.832E-010 N = 1.437 RS = 0.08015 BV = 300 CJO = 6E-011 VJ = 0.6 M = 0.7028 TT=2.3E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN24H11DS Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN24H11DSQ Spice Model ---------- .SUBCKT DMN24H11DSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 4.188 RS 30 3 0.001 RG 20 2 17.89 CGS 2 3 6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.6 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5961 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.416E-011 VJ = 0.8 M = 0.7743 .MODEL DSUB D IS = 3.832E-010 N = 1.437 RS = 0.08015 BV = 300 CJO = 6E-011 VJ = 0.6 M = 0.7028 TT=2.3E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN24H11DSQ Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN24H11DSQ Spice Model ---------- .SUBCKT DMN24H11DSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 4.188 RS 30 3 0.001 RG 20 2 17.89 CGS 2 3 6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.6 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5961 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.416E-011 VJ = 0.8 M = 0.7743 .MODEL DSUB D IS = 3.832E-010 N = 1.437 RS = 0.08015 BV = 300 CJO = 6E-011 VJ = 0.6 M = 0.7028 TT=2.3E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN24H11DSQ Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN24H3D5L Spice Model ---------- .SUBCKT DMN24H3D5L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.5 RS 30 3 0.001 RG 20 2 3.86 CGS 2 3 2.2E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.384 + TOX = 6E-008 NSUB = 1E+016 KP = 3.501 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.657E-010 VJ = 0.6 M = 0.7947 .MODEL DSUB D IS = 7.117E-010 N = 1.369 RS = 0.04982 BV = 280 CJO = 1E-015 VJ = 0.6 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN24H3D5L Spice Model v1.0M Last Revised 2016/3/14 *---------- DMN2500UFB4 Spice Model ---------- .SUBCKT DMN2500UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2263 RS 30 3 0.001 RG 20 2 92.87 CGS 2 3 5.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8822 TOX = 6E-008 NSUB = 1E+016 KP = 5.422 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.566E-011 VJ = 0.1 M = 0.3169 .MODEL DSUB D IS = 1.051E-009 N = 1.807 RS = 4.441E-010 BV = 26 CJO = 1.5E-011 VJ = 0.6 M = 0.6917 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2500UFB4 Spice Model v1.0M Last Revised 2016/6/30 *---------- DMN2501UFB4 Spice Model ---------- .SUBCKT DMN2501UFB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.09 RS 30 3 0.0001 RG 20 2 83.13 CGS 2 3 7E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.83 + TOX = 1E-007 NSUB = 1E+015 KP = 7.9 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.5E-010 VJ = 0.55 M = 0.8518 .MODEL DSUB D IS = 8E-010 N = 1.29 RS = 0.14 BV = 23.67 + CJO = 1E-012 VJ = 0.8 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1B Last Revised 2020/03/17 *---------- DMN2550UFA Spice Model ---------- .SUBCKT DMN2550UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1364 RS 30 3 0.001 RG 20 2 393.8 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.38E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7707 + TOX = 6E-008 NSUB = 1E+016 KP = 4.742 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.478E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.986E-010 N = 1.141 RS = 1.236 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2550UFA Spice Model v1.0M Last Revised 2017/6/8 *---------- DMN25D0UFA Spice Model ---------- .SUBCKT DMN25D0UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.5891 RS 30 3 0.0001 RG 20 2 26.99 CGS 2 3 2.665E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9779 + TOX = 6E-008 NSUB = 1E+016 KP = 2.221 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.755E-012 VJ = 0.6485 M = 0.6 .MODEL DSUB D IS = 1.085E-009 N = 1.395 RS = 0.169 BV = 27.5 + CJO = 1.1E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN25D0UFA Spice Model v1.0J Last Revised 2018/10/08 *---------- DMN2600UFB Spice Model ---------- .SUBCKT DMN2600UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3301 RS 30 3 0.001 RG 20 2 72.3 CGS 2 3 6.524E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 6.963E+004 ETA = 1.444E-015 VTO = 0.9928 + TOX = 6E-008 NSUB = 1E+016 KP = 6.867 KAPPA = 0.41 U0 = 400 .MODEL DCGD D CJO = 2.395E-011 VJ = 0.07377 M = 0.279 .MODEL DSUB D IS = 1.816E-009 N = 1.387 RS = 0.2679 BV = 35 CJO = 5.814E-012 VJ = 0.1256 M = 0.2537 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2600UFB Spice Model v1.0 Last Revised 2011/2/9 *---------- DMN26D0UDJ Spice Model ---------- .SUBCKT DMN26D0UDJ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.05 RS 30 3 0.0001 RG 20 2 742.1 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.81 + TOX = 1E-007 NSUB = 1E+016 KP = 0.73 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.8E-012 VJ = 0.5 M = 0.4008 .MODEL DSUB D IS = 8E-010 N = 1.62 RS = 0.39 BV = 28.8 + CJO = 3.2E-012 VJ = 0.6 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/26 *---------- DMN26D0UFB4 Spice Model ---------- .SUBCKT DMN26D0UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN26D0UFB4 Spice Model v1.0 Last Revised 2011/1/10 *---------- DMN26D0UT Spice Model ---------- .SUBCKT DMN26D0UT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.37 RS 30 3 0.0001 RG 20 2 253.2 CGS 2 3 2.405E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.854 + TOX = 6E-008 NSUB = 1E+016 KP = 2.487 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 9.388E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.256E-011 N = 1.496 RS = 0.3034 BV = 21.53 + CJO = 1.006E-012 VJ = 0.8 M = 0.6 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN26D0UT Spice Model v1.0J Last Revised 2018/01/29 *---------- DMN26D0UT Spice Model ---------- .SUBCKT DMN26D0UT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN26D0UT Spice Model v1.0 Last Revised 2011/1/10 *---------- DMN2710UDW Spice Model ---------- .SUBCKT DMN2710UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UDW Spice Model v1.0J Last Revised 2020/11/26 *---------- DMN2710UDWQ Spice Model ---------- .SUBCKT DMN2710UDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UDWQ Spice Model v1.0J Last Revised 2020/11/26 *---------- DMN2710UFB Spice Model ---------- .SUBCKT DMN2710UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UFB Spice Model v1.0J Last Revised 2020/11/26 *---------- DMN2710UFBQ Spice Model ---------- .SUBCKT DMN2710UFBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UFBQ Spice Model v1.0J Last Revised 2022/11/26 *---------- DMN2710UT Spice Model ---------- .SUBCKT DMN2710UT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UT Spice Model v1.0J Last Revised 2020/11/26 *---------- DMN2710UTQ Spice Model ---------- .SUBCKT DMN2710UTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UTQ Spice Model v1.0J Last Revised 2020/11/26 *---------- DMN2710UV Spice Model ---------- .SUBCKT DMN2710UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UV Spice Model v1.0J Last Revised 2022/11/26 *---------- DMN2710UVQ Spice Model ---------- .SUBCKT DMN2710UVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UVQ Spice Model v1.0J Last Revised 2022/11/26 *---------- DMN2710UW Spice Model ---------- .SUBCKT DMN2710UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UW Spice Model v1.0J Last Revised 2020/01/26 *---------- DMN2710UWQ Spice Model ---------- .SUBCKT DMN2710UWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.12 RS 30 3 0.0001 RG 20 2 1544 CGS 2 3 4.066E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7916 + TOX = 6E-008 NSUB = 1E+016 KP = 5.2 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.599E-010 N = 1.249 RS = 0.3268 BV = 25.29 + CJO = 2.163E-011 VJ = 0.8 M = 0.6001 TT = 4.395E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2710UWQ Spice Model v1.0J Last Revised 2020/01/26 *---------- DMN2990UDJ Spice Model ---------- .SUBCKT DMN2990UDJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UDJ Spice Model v1.0 Last Revised 2011/8/12 *---------- DMN2990UDJQ Spice Model ---------- .SUBCKT DMN2990UDJQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3366 RS 30 3 0.001 RG 20 2 216.8 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 + TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UDJQ Spice Model v1.0M Last Revised 2017/2/8 *---------- DMN2990UFA Spice Model ---------- *NMOS .SUBCKT DMN2990UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UFA Spice Model v1.0 Last Revised 2012/11/30 *---------- DMN2990UFB Spice Model ---------- .SUBCKT DMN2990UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3366 RS 30 3 0.001 RG 20 2 216.8 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 + TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UFB Spice Model v1.0M Last Revised 2016/11/29 *---------- DMN2990UFO Spice Model ---------- .SUBCKT DMN2990UFO 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3366 RS 30 3 0.001 RG 20 2 216.8 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 + TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UFO Spice Model v1.0M Last Revised 2016/11/29 *---------- DMN2990UFZ Spice Model ---------- .SUBCKT DMN2990UFZ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3366 RS 30 3 0.001 RG 20 2 216.8 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 + TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UFZ Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN2991UDA Spice Model ---------- .SUBCKT DMN2991UDA 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 940 CGS 2 3 1.787E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8936 + TOX = 1E-007 NSUB = 1E+015 KP = 2.6 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.1E-011 VJ = 0.5119 M = 0.35 .MODEL DSUB D IS = 5.2E-010 N = 1.344 RS = 0.289 BV = 24.51 + CJO = 2.9E-012 VJ = 0.6 M = 0.3 XTI = 0 TT = 6.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/1/12 *---------- DMN2991UDJ Spice Model ---------- .SUBCKT DMN2991UDJ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 887.6 CGS 2 3 1.466E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8806 + TOX = 1E-007 NSUB = 1E+015 KP = 2.15 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.719E-012 VJ = 0.785 M = 0.35 .MODEL DSUB D IS = 3.407E-009 N = 1.58 RS = 0.2324 BV = 25.05 + CJO = 3.376E-012 VJ = 0.9 M = 0.3 TT = 8.81E-009 .MODEL DLIM D IS = 0.0001 .ENDS DMN2991UDJ Diodes Spice Model v1.0J Last Revised 2020/01/31 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN2991UDR4 Spice Model ---------- *--------------------NMOS-------------------- .SUBCKT DMN2991UDR4_N 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 887.6 CGS 2 3 1.466E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8806 + TOX = 1E-007 NSUB = 1E+015 KP = 2.15 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.719E-012 VJ = 0.785 M = 0.35 .MODEL DSUB D IS = 3.407E-009 N = 1.58 RS = 0.2324 BV = 25.05 + CJO = 3.376E-012 VJ = 0.9 M = 0.3 TT = 8.81E-009 .MODEL DLIM D IS = 0.0001 .ENDS DMN2991UDR4_N *---------- DMN2991UFA Spice Model ---------- .SUBCKT DMN2991UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.15 RS 30 3 0.0001 RG 20 2 940 CGS 2 3 1.899E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.879 + TOX = 6E-008 NSUB = 1E+016 KP = 2.074 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.169E-009 N = 1.438 RS = 1.041 BV = 24.51 + CJO = 2.3E-012 VJ = 0.8 M = 0.6 TT = 6.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2991UFA Spice Model v1.0J Last Revised 2022/10/18 *---------- DMN2991UFB4 Spice Model ---------- .SUBCKT DMN2991UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.15 RS 30 3 0.0001 RG 20 2 940 CGS 2 3 1.899E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.879 + TOX = 6E-008 NSUB = 1E+016 KP = 2.074 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.169E-009 N = 1.438 RS = 1.041 BV = 24.51 + CJO = 2.3E-012 VJ = 0.8 M = 0.6 TT = 6.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2991UFB4 Spice Model v1.0J Last Revised 2021/10/18 *---------- DMN2991UFB4Q Spice Model ---------- .SUBCKT DMN2991UFB4Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.15 RS 30 3 0.0001 RG 20 2 940 CGS 2 3 1.899E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.879 + TOX = 6E-008 NSUB = 1E+016 KP = 2.074 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.169E-009 N = 1.438 RS = 1.041 BV = 24.51 + CJO = 2.3E-012 VJ = 0.8 M = 0.6 TT = 6.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2991UFB4Q Spice Model v1.0J Last Revised 2021/10/18 *---------- DMN2991UFO Spice Model ---------- .SUBCKT DMN2991UFO 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 887.6 CGS 2 3 1.466E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8806 + TOX = 1E-007 NSUB = 1E+015 KP = 2.15 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.719E-012 VJ = 0.785 M = 0.35 .MODEL DSUB D IS = 3.407E-009 N = 1.58 RS = 0.2324 BV = 25.05 + CJO = 3.376E-012 VJ = 0.9 M = 0.3 TT = 8.81E-009 .MODEL DLIM D IS = 0.0001 .ENDS DMN2991UFO Diodes Spice Model v1.0J Last Revised 2020/01/31 *---------- DMN2991UFZ Spice Model ---------- .SUBCKT DMN2991UFZ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 940 CGS 2 3 1.787E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8936 + TOX = 1E-007 NSUB = 1E+015 KP = 2.6 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.1E-011 VJ = 0.5119 M = 0.35 .MODEL DSUB D IS = 5.2E-010 N = 1.344 RS = 0.289 BV = 24.51 + CJO = 2.9E-012 VJ = 0.6 M = 0.3 XTI = 0 TT = 6.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/1/12 *---------- DMN2991UFZQ Spice Model ---------- .SUBCKT DMN2991UFZQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.15 RS 30 3 0.0001 RG 20 2 940 CGS 2 3 1.899E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.879 + TOX = 6E-008 NSUB = 1E+016 KP = 2.074 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.169E-009 N = 1.438 RS = 1.041 BV = 24.51 + CJO = 2.3E-012 VJ = 0.8 M = 0.6 TT = 6.17E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2991UFZQ Spice Model v1.0J Last Revised 2021/03/18 *---------- DMN2991UT Spice Model ---------- .SUBCKT DMN2991UT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 887.6 CGS 2 3 1.466E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8806 + TOX = 1E-007 NSUB = 1E+015 KP = 2.15 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.719E-012 VJ = 0.785 M = 0.35 .MODEL DSUB D IS = 3.407E-009 N = 1.58 RS = 0.2324 BV = 25.05 + CJO = 3.376E-012 VJ = 0.9 M = 0.3 TT = 8.81E-009 .MODEL DLIM D IS = 0.0001 .ENDS DMN2991UT Diodes Spice Model v1.0J Last Revised 2020/10/31 *---------- DMN2991UTQ Spice Model ---------- .SUBCKT DMN2991UTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.21 RS 30 3 0.0001 RG 20 2 887.6 CGS 2 3 1.466E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8806 + TOX = 1E-007 NSUB = 1E+015 KP = 2.15 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.719E-012 VJ = 0.785 M = 0.35 .MODEL DSUB D IS = 3.407E-009 N = 1.58 RS = 0.2324 BV = 25.05 + CJO = 3.376E-012 VJ = 0.9 M = 0.3 TT = 8.81E-009 .MODEL DLIM D IS = 0.0001 .ENDS DMN2991UTQ Diodes Spice Model v1.0J Last Revised 2020/10/31 *---------- DMN2992UDR4 Spice Model ---------- .SUBCKT DMN2992UDR4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2605 RS 30 3 0.0001 RG 20 2 229.1 CGS 2 3 1.15E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.65E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.58 + TOX = 1E-007 NSUB = 1E+014 KP = 1.65 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.35E-011 VJ = 0.5 M = 0.3808 .MODEL DSUB D IS = 4.3E-010 N = 1.42 RS = 0.2008 BV = 25.98 + CJO = 5.2E-012 VJ = 0.75 M = 0.75 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/11/29 *---------- DMN2992UFA Spice Model ---------- .SUBCKT DMN2992UFA 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2605 RS 30 3 0.0001 RG 20 2 229.1 CGS 2 3 1.15E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.65E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.58 + TOX = 1E-007 NSUB = 1E+014 KP = 1.65 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.35E-011 VJ = 0.5 M = 0.3808 .MODEL DSUB D IS = 4.3E-010 N = 1.42 RS = 0.2008 BV = 25.98 + CJO = 5.2E-012 VJ = 0.75 M = 0.75 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2023/11/29 *---------- DMN2992UFB4 Spice Model ---------- .SUBCKT DMN2992UFB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2605 RS 30 3 0.0001 RG 20 2 229.1 CGS 2 3 1.15E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.65E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.58 + TOX = 1E-007 NSUB = 1E+014 KP = 1.65 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.35E-011 VJ = 0.5 M = 0.3808 .MODEL DSUB D IS = 4.3E-010 N = 1.42 RS = 0.2008 BV = 25.98 + CJO = 5.2E-012 VJ = 0.75 M = 0.75 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/11/29 *---------- DMN2992UFB4Q Spice Model ---------- .SUBCKT DMN2992UFB4Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2605 RS 30 3 0.0001 RG 20 2 229.1 CGS 2 3 1.15E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.65E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.58 + TOX = 1E-007 NSUB = 1E+014 KP = 1.65 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.35E-011 VJ = 0.5 M = 0.3808 .MODEL DSUB D IS = 4.3E-010 N = 1.42 RS = 0.2008 BV = 25.98 + CJO = 5.2E-012 VJ = 0.75 M = 0.75 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/11/29 *---------- DMN2992UFO Spice Model ---------- .SUBCKT DMN2992UFO 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2605 RS 30 3 0.0001 RG 20 2 229.1 CGS 2 3 1.15E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.65E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.58 + TOX = 1E-007 NSUB = 1E+014 KP = 1.65 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.35E-011 VJ = 0.5 M = 0.3808 .MODEL DSUB D IS = 4.3E-010 N = 1.42 RS = 0.2008 BV = 25.98 + CJO = 5.2E-012 VJ = 0.75 M = 0.75 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/11/29 *---------- DMN2992UFZ Spice Model ---------- .SUBCKT DMN2992UFZ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2605 RS 30 3 0.0001 RG 20 2 229.1 CGS 2 3 1.15E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.65E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.58 + TOX = 1E-007 NSUB = 1E+014 KP = 1.65 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.35E-011 VJ = 0.5 M = 0.3808 .MODEL DSUB D IS = 4.3E-010 N = 1.42 RS = 0.2008 BV = 25.98 + CJO = 5.2E-012 VJ = 0.75 M = 0.75 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/11/29 *---------- DMN29M9UFDF Spice Model ---------- .SUBCKT DMN29M9UFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0105 RS 30 3 0.0001 RG 20 2 6.56 CGS 2 3 5.89E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.97 + TOX = 1E-007 NSUB = 1E+014 KP = 332.4 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.78E-010 VJ = 0.52 M = 0.5008 .MODEL DSUB D IS = 5.5E-009 N = 1.22 RS = 0.0088 BV = 25.01 + CJO = 1.808E-010 VJ = 0.75 M = 0.54 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/06/15 *---------- DMN3003LCA8 Spice Model ---------- .SUBCKT DMN3003LCA8 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 SINGLE X2 10 40 50 SINGLE .ENDS *Single Device .SUBCKT SINGLE 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00084 RS 30 3 0.0001 RG 20 2 417.1 CGS 2 3 2.57E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.88E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.386 + TOX = 1E-007 NSUB = 1E+016 KP = 780 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.15E-010 VJ = 0.8 M = 0.4 .MODEL DSUB D IS = 5.8E-009 N = 1.38 RS = 0.001 BV = 32.68 + CJO = 1.2E-009 VJ = 0.9 M = 0.32 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2021/12/06 *---------- DMN3006SCA6 Spice Model ---------- .SUBCKT DMN3006SCA6 10 20 30 40 50 * TERMINALS: D G1 S1 G2 S2 * MODEL FORMAT : SPICE3 * Editor : J X1 60 20 30 SINGLE X2 60 40 50 SINGLE RDRAIN 60 10 0.1 .ENDS DMN3006SCA6 *Single Device .SUBCKT SINGLE 10 20 30 * TERMINALS : D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00035 RS 30 3 0.0001 RG 20 2 1.47 CGS 2 3 1.92E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.17E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2 + TOX = 1E-007 NSUB = 1E+015 KP = 130 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.851E-010 VJ = 0.8 M = 0.3503 .MODEL DSUB D IS = 3.4E-009 N = 1.378 RS = 0.0313 BV = 32.71 + CJO = 4.88E-010 VJ = 0.9 M = 0.4364 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS SINGLE *Diodes Spice Model v1.1 Last Revised 2020/06/12 *---------- DMN3007LSS Spice Model ---------- .SUBCKT DMN3007LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004231 RS 30 3 0.001 RG 20 2 0.7 CGS 2 3 2.344E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.75E+005 ETA = 0.01118 VTO = 2.29 + TOX = 6E-008 NSUB = 7.825E+016 KP = 86.95 KAPPA = 256.4 U0 = 170.2 .MODEL DCGD D CJO = 2.253E-009 VJ = 0.3475 M = 0.4648 .MODEL DSUB D IS = 2.301E-010 N = 1.194 RS = 0.002878 BV = 35 CJO = 6.368E-010 VJ = 0.6415 M = 0.7534 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3007LSS Spice Model v1.1 Last Revised 2011/3/2 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN3007LSSQ Spice Model ---------- .SUBCKT DMN3007LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004231 RS 30 3 0.001 RG 20 2 0.7 CGS 2 3 2.344E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.75E+005 ETA = 0.01118 VTO = 2.29 + TOX = 6E-008 NSUB = 7.825E+016 KP = 86.95 KAPPA = 256.4 U0 = 170.2 .MODEL DCGD D CJO = 2.253E-009 VJ = 0.3475 M = 0.4648 .MODEL DSUB D IS = 2.301E-010 N = 1.194 RS = 0.002878 BV = 35 CJO = 6.368E-010 VJ = 0.6415 M = 0.7534 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3007LSSQ Spice Model v1.1 Last Revised 2011/3/2 *---------- DMN3008SCP10 Spice Model ---------- .SUBCKT DMN3008SCP10 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004161 RS 30 3 0.001 RG 20 2 436.8 CGS 2 3 1.44E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.229 + TOX = 6E-008 NSUB = 1E+016 KP = 141.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.255E-010 N = 1.24 RS = 0.003684 BV = 32 CJO = 4.715E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3008SCP10 Spice Model v1.0M Last Revised 2017/3/23 *---------- DMN3008SFG Spice Model ---------- .SUBCKT DMN3008SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001509 RS 30 3 0.001 RG 20 2 0.02 CGS 2 3 3.299E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.645 + TOX = 6E-008 NSUB = 1E+016 KP = 135.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.825E-009 VJ = 0.7987 M = 0.6 .MODEL DSUB D IS = 2.672E-010 N = 1.105 RS = 0.003471 BV = 35 CJO = 6.274E-010 VJ = 0.8 M = 0.6 TT=1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3008SFG Spice Model v1.0M Last Revised 2016/5/3 *---------- DMN3008SFGQ Spice Model ---------- .SUBCKT DMN3008SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001509 RS 30 3 0.001 RG 20 2 0.02 CGS 2 3 3.299E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.645 + TOX = 6E-008 NSUB = 1E+016 KP = 135.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.825E-009 VJ = 0.7987 M = 0.6 .MODEL DSUB D IS = 2.672E-010 N = 1.105 RS = 0.003471 BV = 35 CJO = 6.274E-010 VJ = 0.8 M = 0.6 TT=1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3008SFGQ Spice Model v1.0M Last Revised 2016/5/3 *---------- DMN3009LFV Spice Model ---------- .SUBCKT DMN3009LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002613 RS 30 3 1E-008 RG 20 2 2.2 CGS 2 3 1.778E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 + TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 .MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3009LFV Spice Model v1.0 Last Revised 2015/8/03 *---------- DMN3009LFVQ Spice Model ---------- .SUBCKT DMN3009LFVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002613 RS 30 3 1E-008 RG 20 2 2.2 CGS 2 3 1.778E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 + TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 .MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3009LFVQ Spice Model v1.0 Last Revised 2015/8/03 *---------- DMN3009LFVW Spice Model ---------- .SUBCKT DMN3009LFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002613 RS 30 3 1E-008 RG 20 2 2.2 CGS 2 3 1.778E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 + TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 .MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3009LFVW Spice Model v1.0 Last Revised 2016/8/03 *---------- DMN3009LFVWQ Spice Model ---------- .SUBCKT DMN3009LFVWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002613 RS 30 3 1E-008 RG 20 2 2.2 CGS 2 3 1.778E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 + TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 .MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3009LFVWQ Spice Model v1.0 Last Revised 2016/8/03 *---------- DMN3009SFG Spice Model ---------- .SUBCKT DMN3009SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002613 RS 30 3 1E-008 RG 20 2 2.2 CGS 2 3 1.778E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 + TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 .MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3009SFG Spice Model v1.0 Last Revised 2015/8/03 *---------- DMN3009SFGQ Spice Model ---------- .SUBCKT DMN3009SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002613 RS 30 3 1E-008 RG 20 2 2.2 CGS 2 3 1.778E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 + TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 .MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3009SFGQ Spice Model v1.0 Last Revised 2017/12/15 *---------- DMN3009SK3 Spice Model ---------- .SUBCKT DMN3009SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002613 RS 30 3 1E-008 RG 20 2 2.2 CGS 2 3 1.778E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 + TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 .MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3009SK3 Spice Model v1.0 Last Revised 2015/8/03 *---------- DMN3009SSS Spice Model ---------- .SUBCKT DMN3009SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002613 RS 30 3 1E-008 RG 20 2 2.2 CGS 2 3 1.778E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 + TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 .MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3009SSS Spice Model v1.0 Last Revised 2018/8/03 *---------- DMN3010LFG Spice Model ---------- .SUBCKT DMN3010LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.36 CGS 2 3 1.952E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.358 + TOX = 6E-008 NSUB = 1E+016 KP = 129.3 U0 = 400 KAPPA = 4.441E-014 .MODEL DCGD D CJO = 7.076E-010 VJ = 0.6 M = 0.4965 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 + BV = 35 CJO = 2.865E-010 VJ = 2.446 M = 1.359 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3010LFG Spice Model v1.0 Last Revised 2014/3/14 *---------- DMN3010LK3 Spice Model ---------- .SUBCKT DMN3010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.36 CGS 2 3 1.952E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.358 + TOX = 6E-008 NSUB = 1E+016 KP = 129.3 U0 = 400 KAPPA = 4.441E-014 .MODEL DCGD D CJO = 7.076E-010 VJ = 0.6 M = 0.4965 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 + BV = 35 CJO = 2.865E-010 VJ = 2.446 M = 1.359 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3010LK3 Spice Model v1.0 Last Revised 2014/3/14 *SRC=DMN3010LSS;DI_DMN3010LSS;MOSFETs N;Enh;30.0V 16.0A 9.00mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3010LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 3.27m RS 40 3 1.22m RG 20 2 9.37 CGS 2 3 1.68n EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.23n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.00 KP=41.4 .MODEL DCGD D (CJO=2.23n VJ=0.600 M=0.680 .MODEL DSUB D (IS=66.4n N=1.50 RS=28.1m BV=30.0 + CJO=485p VJ=0.800 M=0.420 TT=324n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN3011LFVW Spice Model ---------- .SUBCKT DMN3011LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006071 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.027E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.293 + TOX = 1E-007 NSUB = 1E+016 KP = 137.9 U0 = 900 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.333E-010 VJ = 0.611 M = 0.4386 .MODEL DSUB D IS = 7.696E-010 N = 1.294 RS = 0.003866 BV = 34.67 + CJO = 2.312E-010 VJ = 0.7837 M = 0.6093 XTI = 0 TT = 4.598E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/04/01 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3011LFVWQ Spice Model ---------- .SUBCKT DMN3011LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006071 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.027E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.293 + TOX = 1E-007 NSUB = 1E+016 KP = 137.9 U0 = 900 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.333E-010 VJ = 0.611 M = 0.4386 .MODEL DSUB D IS = 7.696E-010 N = 1.294 RS = 0.003866 BV = 34.67 + CJO = 2.312E-010 VJ = 0.7837 M = 0.6093 XTI = 0 TT = 4.598E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/04/01 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3011LSS Spice Model ---------- .SUBCKT DMN3011LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006071 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.027E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.293 + TOX = 1E-007 NSUB = 1E+016 KP = 137.9 U0 = 900 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.333E-010 VJ = 0.611 M = 0.4386 .MODEL DSUB D IS = 7.696E-010 N = 1.294 RS = 0.003866 BV = 34.67 + CJO = 2.312E-010 VJ = 0.7837 M = 0.6093 XTI = 0 TT = 4.598E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/04/01 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3011LSSQ Spice Model ---------- .SUBCKT DMN3011LSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006071 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.027E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.293 + TOX = 1E-007 NSUB = 1E+016 KP = 137.9 U0 = 900 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.333E-010 VJ = 0.611 M = 0.4386 .MODEL DSUB D IS = 7.696E-010 N = 1.294 RS = 0.003866 BV = 34.67 + CJO = 2.312E-010 VJ = 0.7837 M = 0.6093 XTI = 0 TT = 4.598E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/04/01 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3012LEG Spice Model ---------- *Q1 .SUBCKT DMN3012LEG_1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00375 RS 30 3 0.0001 RG 20 2 1.63 CGS 2 3 6.362E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.38E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.639 + TOX = 6E-008 NSUB = 1E+016 KP = 48 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.036E-010 VJ = 0.8 M = 0.7539 .MODEL DSUB D IS = 3.4E-011 N = 1.218 RS = 0.001146 BV = 30.96 + CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 1.225E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Q2 .SUBCKT DMN3012LEG_2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00305 RS 30 3 0.0001 RG 20 2 0.54 CGS 2 3 1.118E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.1 + TOX = 6E-008 NSUB = 1E+016 KP = 130 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 8.546E-010 N = 1.276 RS = 0.0007781 BV = 31.12 + CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 1.525E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3012LEG Spice Model v1.0J Last Revised 2019/02/23 *---------- DMN3012LFG Spice Model ---------- *High Side Q1 .SUBCKT DMN3012LFG_high 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001098 RS 30 3 0.001 RG 20 2 1.63 CGS 2 3 6.425E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.623 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.038E-010 VJ = 0.8 M = 0.7803 .MODEL DSUB D IS = 2.719E-010 N = 1.316 RS = 0.0001616 BV = 31 CJO = 8E-010 VJ = 0.8 M = 0.6 TT = 1.22E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Low Side Q2 .SUBCKT DMN3012LFG_low 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001219 RS 30 3 0.001 RG 20 2 1.63 CGS 2 3 1.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.064 + TOX = 6E-008 NSUB = 1E+016 KP = 87.26 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.792 .MODEL DSUB D IS = 6.518E-010 N = 1.184 RS = 0.003091 BV = 31 CJO = 1.6E-009 VJ = 0.8 M = 0.6 TT = 1.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3012LFG Spice Model v1.0M Last Revised 2017/8/1 *---------- DMN3013LDG Spice Model ---------- .SUBCKT DMN3013LDG_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007524 RS 30 3 0.001 RG 20 2 3.3 CGS 2 3 3.778E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.2 + TOX = 6E-008 NSUB = 1E+016 KP = 63.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-010 VJ = 0.7798 M = 0.8 .MODEL DSUB D IS = 3.947E-010 N = 1.234 RS = 0.006374 BV = 31.99 + CJO = 1.154E-009 VJ = 0.8 M = 0.6 TT = 5.85E-009 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMN3013LDG_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007524 RS 30 3 0.001 RG 20 2 3.3 CGS 2 3 3.779E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.2 + TOX = 6E-008 NSUB = 1E+016 KP = 63.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.004E-010 VJ = 0.7961 M = 0.8 .MODEL DSUB D IS = 3.947E-010 N = 1.234 RS = 0.006374 BV = 32.56 + CJO = 1.154E-009 VJ = 0.8 M = 0.6 TT = 5.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3013LDG Spice Model v1.0M Last Revised 2018/05/02 *---------- DMN3013LFG Spice Model ---------- .SUBCKT DMN3013LFG_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007524 RS 30 3 0.001 RG 20 2 3.3 CGS 2 3 3.778E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.2 + TOX = 6E-008 NSUB = 1E+016 KP = 63.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.021E-010 VJ = 0.7798 M = 0.8 .MODEL DSUB D IS = 3.947E-010 N = 1.234 RS = 0.006374 BV = 31.99 + CJO = 1.154E-009 VJ = 0.8 M = 0.6 TT = 5.85E-009 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMN3013LFG_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007524 RS 30 3 0.001 RG 20 2 3.3 CGS 2 3 3.779E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.2 + TOX = 6E-008 NSUB = 1E+016 KP = 63.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.004E-010 VJ = 0.7961 M = 0.8 .MODEL DSUB D IS = 3.947E-010 N = 1.234 RS = 0.006374 BV = 32.56 + CJO = 1.154E-009 VJ = 0.8 M = 0.6 TT = 5.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3013LFG Spice Model v1.0M Last Revised 2018/05/02 *---------- DMN3015LSD Spice Model ---------- .SUBCKT DMN3015LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007363 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.344E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.213 + TOX = 6E-008 NSUB = 1E+016 KP = 176.5 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.27E-010 VJ = 0.7983 M = 0.6 .MODEL DSUB D IS = 8.592E-011 N = 1.184 RS = 0.003043 BV = 50 CJO = 3.379E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3015LSD Spice Model v1.0 Last Revised 2015/6/16 *---------- DMN3016LDN Spice Model ---------- .SUBCKT DMN3016LDN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LDN Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN3016LDV Spice Model ---------- .SUBCKT DMN3016LDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LDV Spice Model v1.0M Last Revised 2016/9/7 *---------- DMN3016LFDE Spice Model ---------- .SUBCKT DMN3016LFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LFDE Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN3016LFDF Spice Model ---------- .SUBCKT DMN3016LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007363 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.344E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.213 + TOX = 6E-008 NSUB = 1E+016 KP = 176.5 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.27E-010 VJ = 0.7983 M = 0.6 .MODEL DSUB D IS = 8.592E-011 N = 1.184 RS = 0.003043 BV = 50 CJO = 3.379E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LFDF Spice Model v1.0 Last Revised 2015/6/16 *---------- DMN3016LFDFQ Spice Model ---------- .SUBCKT DMN3016LFDFQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007363 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.344E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.213 + TOX = 6E-008 NSUB = 1E+016 KP = 176.5 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.27E-010 VJ = 0.7983 M = 0.6 .MODEL DSUB D IS = 8.592E-011 N = 1.184 RS = 0.003043 BV = 50 CJO = 3.379E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LFDFQ Spice Model v1.0 Last Revised 2015/6/16 *---------- DMN3016LK3 Spice Model ---------- .SUBCKT DMN3016LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LK3 Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN3016LPS Spice Model ---------- .SUBCKT DMN3016LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LPS Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN3016LSS Spice Model ---------- .SUBCKT DMN3016LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3016LSS Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN3018SFG Spice Model ---------- .SUBCKT DMN3018SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009782 RS 30 3 0.001 RG 20 2 1.16 CGS 2 3 7.066E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.066E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.353 + TOX = 6E-008 NSUB = 1E+016 KP = 52.61 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.065E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.251E-010 N = 1.3 RS = 0.004445 BV = 33.26 CJO = 2.225E-010 VJ = 0.1072 M = 0.284 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3018SFG Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN3018SFGQ Spice Model ---------- .SUBCKT DMN3018SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009782 RS 30 3 0.001 RG 20 2 1.16 CGS 2 3 7.066E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.066E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.353 + TOX = 6E-008 NSUB = 1E+016 KP = 52.61 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.065E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.251E-010 N = 1.3 RS = 0.004445 BV = 33.26 CJO = 2.225E-010 VJ = 0.1072 M = 0.284 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3018SFGQ Spice Model v1.0M Last Revised 2016/2/25 *---------- DMN3018SSD Spice Model ---------- .SUBCKT DMN3018SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01061 RS 30 3 0.001 RG 20 2 1.47 CGS 2 3 1.924E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-013 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.267 + TOX = 6E-008 NSUB = 1E+016 KP = 33.03 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 7.297E-010 VJ = 0.6 M = 0.5206 .MODEL DSUB D IS = 1.439E-013 N = 0.9284 RS = 0.01772 + BV = 20 CJO = 4.24E-010 VJ = 0.65 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3018SSD Spice Model v1.0 Last Revised 2015/1/30 *---------- DMN3018SSS Spice Model ---------- .SUBCKT DMN3018SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01061 RS 30 3 0.001 RG 20 2 1.47 CGS 2 3 1.924E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-013 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.267 + TOX = 6E-008 NSUB = 1E+016 KP = 33.03 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 7.297E-010 VJ = 0.6 M = 0.5206 .MODEL DSUB D IS = 1.439E-013 N = 0.9284 RS = 0.01772 + BV = 20 CJO = 4.24E-010 VJ = 0.65 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3018SSS Spice Model v1.0 Last Revised 2014/7/24 *---------- DMN3020UFDF Spice Model ---------- .SUBCKT DMN3020UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01197 RS 30 3 0.001 RG 20 2 1.27 CGS 2 3 1.239E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9495 + TOX = 6E-008 NSUB = 1E+016 KP = 109.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.31E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.004E-008 N = 1.226 RS = 0.01837 BV = 35.5 CJO = 2.226E-010 VJ = 0.7186 M = 0.6022 TT = 3.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3020UFDF Spice Model v1.0M Last Revised 2016/7/19 *---------- DMN3020UFDFQ Spice Model ---------- .SUBCKT DMN3020UFDFQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01197 RS 30 3 0.001 RG 20 2 1.27 CGS 2 3 1.239E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9495 + TOX = 6E-008 NSUB = 1E+016 KP = 109.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.31E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.004E-008 N = 1.226 RS = 0.01837 BV = 35.5 CJO = 2.226E-010 VJ = 0.7186 M = 0.6022 TT = 3.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3020UFDFQ Spice Model v1.0M Last Revised 2016/7/19 *---------- DMN3020UTS Spice Model ---------- .SUBCKT DMN3020UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01197 RS 30 3 0.001 RG 20 2 1.27 CGS 2 3 1.239E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9495 + TOX = 6E-008 NSUB = 1E+016 KP = 109.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.31E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.004E-008 N = 1.226 RS = 0.01837 BV = 35.5 CJO = 2.226E-010 VJ = 0.7186 M = 0.6022 TT = 3.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3020UTS Spice Model v1.0M Last Revised 2016/7/19 *---------- DMN3021LFDF Spice Model ---------- .SUBCKT DMN3021LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007356 RS 30 3 0.001 RG 20 2 2.75 CGS 2 3 6.551E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.915 + TOX = 6E-008 NSUB = 1E+016 KP = 48.83 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.203E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.259E-010 N = 1.266 RS = 0.00556 BV = 34 CJO = 2.269E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3021LFDF Spice Model v1.0M Last Revised 2016/8/29 *---------- DMN3022LDG Spice Model ---------- .SUBCKT DMN3022LDG_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0004759 RS 30 3 0.001 RG 20 2 2.5 CGS 2 3 3.605E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.65E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 21.37 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.778E-011 VJ = 0.7109 M = 0.8 .MODEL DSUB D IS = 2.223E-010 N = 1.331 RS = 4.441E-010 BV = 31.67 + CJO = 1.015E-009 VJ = 0.6641 M = 0.6 TT = 5.75E-009 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMN3022LDG_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 8.25E-007 RS 30 3 0.001 RG 20 2 0.69 CGS 2 3 7.532E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.39E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.1 + TOX = 6E-008 NSUB = 1E+016 KP = 48.06 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.653E-010 VJ = 0.8 M = 0.799 .MODEL DSUB D IS = 3.587E-010 N = 1.205 RS = 0.00238 BV = 30.94 + CJO = 1.778E-009 VJ = 0.8 M = 0.6068 TT = 1.345E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3022LDG Spice Model v1.0M Last Revised 2018/05/03 *---------- DMN3022LFG Spice Model ---------- .SUBCKT DMN3022LFG_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0004759 RS 30 3 0.001 RG 20 2 2.5 CGS 2 3 3.605E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.65E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 21.37 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.778E-011 VJ = 0.7109 M = 0.8 .MODEL DSUB D IS = 2.223E-010 N = 1.331 RS = 4.441E-010 BV = 31.67 + CJO = 1.015E-009 VJ = 0.6641 M = 0.6 TT = 5.75E-009 .MODEL DLIM D IS = 0.0001 .ENDS .SUBCKT DMN3022LFG_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 8.25E-007 RS 30 3 0.001 RG 20 2 0.69 CGS 2 3 7.532E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.39E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.1 + TOX = 6E-008 NSUB = 1E+016 KP = 48.06 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.653E-010 VJ = 0.8 M = 0.799 .MODEL DSUB D IS = 3.587E-010 N = 1.205 RS = 0.00238 BV = 30.94 + CJO = 1.778E-009 VJ = 0.8 M = 0.6068 TT = 1.345E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3022LFG Spice Model v1.0M Last Revised 2018/05/03 *---------- DMN3023L Spice Model ---------- .SUBCKT DMN3023L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01447 RS 30 3 0.001 RG 20 2 12 CGS 2 3 8.446E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.83 + TOX = 6E-008 NSUB = 1E+016 KP = 48.02 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.856E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.256E-010 N = 1.23 RS = 0.01103 BV = 30 CJO = 2.22E-010 VJ = 0.1 M = 0.2257 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3023L Spice Model v1.0 Last Revised 2015/7/21 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 *------connections-------D-G-S * .SUBCKT DMN3024LK3 3 4 5 M1 6 20 8 8 Nmod RG 4 2 2 RD 3 6 Rmod1 0.015 RS 8 5 Rmod1 0.005 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 549E-12 C2 2 3 129E-12 C3 15 14 390E-12 C4 16 8 400E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LK3 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=210JUL2010 *VERSION=1 *------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1 * .SUBCKT DMN3024LSD P1 P2 P3 P4 P5 P6 P7 P8 *Device1 M11 106 103 108 108 Nmod R12 P2 102 2 R11 104 106 Rmod1 0.015 R13 108 105 Rmod1 0.005 R15 104 105 100E6 R16 102 105 100E6 D11 105 104 Dmod1 I11 108 121 1 V11 122 121 1 R17 122 108 Rmod2 1 E11 102 103 121 108 1 E12 113 108 102 108 1 E13 114 108 104 108 1 C11 102 108 549E-12 C12 102 104 129E-12 C13 115 114 390E-12 C14 116 108 400E-12 S11 102 115 114 113 SMOD1 S12 113 115 114 113 SMOD2 S13 116 113 113 108 SMOD3 S14 116 102 113 108 SMOD4 L11 P7 104 1E-9 L12 P1 105 1E-9 R18 P7 P8 0.001 *Device2 M21 206 203 208 208 Nmod R22 P4 202 2 R21 204 206 Rmod1 0.015 R23 208 205 Rmod1 0.005 R25 204 205 100E6 R26 202 205 100E6 D21 205 204 Dmod1 I21 208 221 1 V21 222 221 1 R27 222 208 Rmod2 1 E21 202 203 221 208 1 E22 213 208 202 208 1 E23 214 208 204 208 1 C21 202 208 549E-12 C22 202 204 129E-12 C23 215 214 390E-12 C24 216 208 400E-12 S21 202 215 214 213 SMOD1 S22 213 215 214 213 SMOD2 S23 216 213 213 208 SMOD3 S24 216 202 213 208 SMOD4 L21 P5 204 1E-9 L22 P3 205 1E-9 R28 P5 P6 0.001 * .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LSD * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 *------connections-------D-G-S * .SUBCKT DMN3024LSS 3 4 5 M1 6 20 8 8 Nmod RG 4 2 2 RD 3 6 Rmod1 0.015 RS 8 5 Rmod1 0.005 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 549E-12 C2 2 3 129E-12 C3 15 14 390E-12 C4 16 8 400E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LSS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 *------connections-------D-G-S * .SUBCKT DMN3024LSS 3 4 5 M1 6 20 8 8 Nmod RG 4 2 2 RD 3 6 Rmod1 0.015 RS 8 5 Rmod1 0.005 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 549E-12 C2 2 3 129E-12 C3 15 14 390E-12 C4 16 8 400E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LSS * *$ *---------- DMN3025LFDF Spice Model ---------- .SUBCKT DMN3025LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0121 RS 30 3 0.001 RG 20 2 2.45 CGS 2 3 5.929E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.863 + TOX = 6E-008 NSUB = 1E+016 KP = 52 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.7 M = 0.65 .MODEL DSUB D IS = 1.511E-011 N = 1.099 RS = 0.01954 BV = 45 CJO = 2.221E-010 VJ = 0.6319 M = 0.7672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3025LFDF Spice Model v1.0 Last Revised 2015/1/30 *---------- DMN3025LFG Spice Model ---------- .SUBCKT DMN3025LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3025LFG Spice Model v1.0 Last Revised 2013/4/17 *---------- DMN3025LFV Spice Model ---------- .SUBCKT DMC3025LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3025LFV Spice Model v1.0M Last Revised 2016/9/7 *---------- DMN3025LSS Spice Model ---------- .SUBCKT DMN3025LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3025LSS Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN3026LVT Spice Model ---------- .SUBCKT DMN3026LVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0121 RS 30 3 0.001 RG 20 2 2.45 CGS 2 3 5.929E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.863 + TOX = 6E-008 NSUB = 1E+016 KP = 52 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.7 M = 0.65 .MODEL DSUB D IS = 1.511E-011 N = 1.099 RS = 0.01954 BV = 45 CJO = 2.221E-010 VJ = 0.6319 M = 0.7672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3026LVT Spice Model v1.0 Last Revised 2015/1/30 *---------- DMN3026LVTQ Spice Model ---------- .SUBCKT DMN3026LVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0121 RS 30 3 0.001 RG 20 2 2.45 CGS 2 3 5.929E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.863 + TOX = 6E-008 NSUB = 1E+016 KP = 52 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.7 M = 0.65 .MODEL DSUB D IS = 1.511E-011 N = 1.099 RS = 0.01954 BV = 45 CJO = 2.221E-010 VJ = 0.6319 M = 0.7672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3026LVTQ Spice Model v1.0 Last Revised 2015/1/30 *---------- DMN3027LFG Spice Model ---------- .SUBCKT DMN3027LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006868 RS 30 3 0.001 RG 20 2 1.92 CGS 2 3 5.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0.001 VTO = 2.23 + TOX = 6E-008 NSUB = 1E+016 KP = 33.14 U0 = 400 KAPPA = 0.001011 .MODEL DCGD D CJO = 2.68E-010 VJ = 0.204 M = 0.3131 .MODEL DSUB D IS = 1.168E-010 N = 1.244 RS = 0.00323 BV = 35 CJO = 1.898E-010 VJ = 0.2902 M = 0.4412 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3027LFG Spice Model v1.0 Last Revised 2015/6/22 *---------- DMN3028L Spice Model ---------- .SUBCKT DMN3028L 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0127 RS 30 3 0.0001 RG 20 2 1.7 CGS 2 3 6E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.99E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.485 + TOX = 1E-007 NSUB = 1E+015 KP = 30 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.294E-010 VJ = 0.6792 M = 0.4778 .MODEL DSUB D IS = 5E-009 N = 1.374 RS = 0.009667 BV = 37.71 + CJO = 1.098E-010 VJ = 0.6 M = 0.4827 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/06/03 *---------- DMN3028LQ Spice Model ---------- .SUBCKT DMN3028LQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0127 RS 30 3 0.0001 RG 20 2 1.7 CGS 2 3 6E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.99E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.485 + TOX = 1E-007 NSUB = 1E+015 KP = 30 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.294E-010 VJ = 0.6792 M = 0.4778 .MODEL DSUB D IS = 5E-009 N = 1.374 RS = 0.009667 BV = 37.71 + CJO = 1.098E-010 VJ = 0.6 M = 0.4827 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/06/03 *---------- DMN3029LFG Spice Model ---------- .SUBCKT DMN3029LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006868 RS 30 3 0.001 RG 20 2 1.92 CGS 2 3 5.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0.001 VTO = 2.23 + TOX = 6E-008 NSUB = 1E+016 KP = 33.14 U0 = 400 KAPPA = 0.001011 .MODEL DCGD D CJO = 2.68E-010 VJ = 0.204 M = 0.3131 .MODEL DSUB D IS = 1.168E-010 N = 1.244 RS = 0.00323 BV = 35 CJO = 1.898E-010 VJ = 0.2902 M = 0.4412 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3029LFG Spice Model v1.0 Last Revised 2011/8/16 *---------- DMN3030LFG Spice Model ---------- .SUBCKT DMN3030LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3030LFG Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN3030LSS Spice Model ---------- .SUBCKT DMN3030LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3030LSS Spice Model v1.0 Last Revised 2011/5/30 *---------- DMN3032L Spice Model ---------- .SUBCKT DMN3032L 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01887 RS 30 3 0.0001 RG 20 2 2.23 CGS 2 3 4.433E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.625E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.944 + TOX = 1E-007 NSUB = 1E+014 KP = 34.83 U0 = 639.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.518E-010 VJ = 0.5148 M = 0.5479 .MODEL DSUB D IS = 5.568E-010 N = 1.365 RS = 0.007711 BV = 35.58 + CJO = 5.946E-011 VJ = 0.6 M = 0.5925 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/15 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3032LE Spice Model ---------- .SUBCKT DMN3032LE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004399 RS 30 3 0.001 RG 20 2 2.29 CGS 2 3 4.23E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 + TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 .MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3032LE Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN3032LFDB Spice Model ---------- .SUBCKT DMN3032LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004399 RS 30 3 0.001 RG 20 2 2.29 CGS 2 3 4.23E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 + TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 .MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3032LFDB Spice Model v1.0 Last Revised 2015/9/23 *---------- DMN3032LFDBQ Spice Model ---------- .SUBCKT DMN3032LFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004399 RS 30 3 0.001 RG 20 2 2.29 CGS 2 3 4.23E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 + TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 .MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3032LFDBQ Spice Model v1.0 Last Revised 2015/9/23 *---------- DMN3032LFDBWQ Spice Model ---------- .SUBCKT DMN3032LFDBWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004399 RS 30 3 0.001 RG 20 2 2.29 CGS 2 3 4.23E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 + TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 .MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3032LFDBWQ Spice Model v1.0 Last Revised 2019/9/23 *---------- DMN3032LQ Spice Model ---------- .SUBCKT DMN3032LQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01887 RS 30 3 0.0001 RG 20 2 2.23 CGS 2 3 4.433E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.625E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.944 + TOX = 1E-007 NSUB = 1E+014 KP = 34.83 U0 = 639.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.518E-010 VJ = 0.5148 M = 0.5479 .MODEL DSUB D IS = 5.568E-010 N = 1.365 RS = 0.007711 BV = 35.58 + CJO = 5.946E-011 VJ = 0.6 M = 0.5925 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/15 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3033LDM Spice Model ---------- .SUBCKT DMN3033LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3033LDM Spice Model V2.0 Last Revised 2013/12/10 *SRC=DMN3033LSD;DI_DMN3033LSD;MOSFETs N;Enh;30.0V 6.90A 22.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3033LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 9.45m RS 40 3 1.55m RG 20 2 21.7 CGS 2 3 633p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 843p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=60.0m + ETA=2.00m VTO=3.00 KP=13.5 .MODEL DCGD D (CJO=843p VJ=0.600 M=0.680 .MODEL DSUB D (IS=28.6n N=1.50 RS=65.2m BV=30.0 + CJO=200p VJ=0.800 M=0.420 TT=252n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN3033LSDNQ Spice Model ---------- .SUBCKT DMN3033LSDNQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3033LSDNQ Spice Model V2.0 Last Revised 2018/2/1 *---------- DMN3033LSDQ Spice Model ---------- .SUBCKT DMN3033LSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3033LSDQ Spice Model V2.0 Last Revised 2018/2/1 *SRC=DMN3033LSN;DI_DMN3033LSN;MOSFETs N;Enh;30.0V 6.00A 30.0mohms DIODES INC MOSFET .MODEL DI_DMN3033LSN NMOS( LEVEL=1 VTO=2.10 KP=3.12u GAMMA=2.60 + PHI=.75 LAMBDA=56.2u RD=4.20m RS=4.20m + IS=3.00p PB=0.800 MJ=0.460 CBD=92.7p + CBS=111p CGSO=1.30u CGDO=1.08u CGBO=5.17u ) * -- Assumes default L=100U W=100U -- *---------- DMN3035LWN Spice Model ---------- .SUBCKT DMN3035LWN 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01998 RS 30 3 0.0001 RG 20 2 1.23 CGS 2 3 3.572E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.985E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.978 + TOX = 1E-007 NSUB = 1.117E+015 KP = 25.86 U0 = 644.8 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.423E-010 VJ = 0.3805 M = 0.4418 .MODEL DSUB D IS = 1.415E-009 N = 1.415 RS = 0.01224 BV = 32.05 + CJO = 4.724E-011 VJ = 0.4186 M = 0.517 XTI = 0 TT = 4.452E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3042L Spice Model ---------- .SUBCKT DMN3042L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01631 RS 30 3 0.001 RG 20 2 3.19 CGS 2 3 5.244E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.053 + TOX = 6E-008 NSUB = 1E+016 KP = 44.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.121E-010 VJ = 0.7018 M = 0.6 .MODEL DSUB D IS = 1.011E-009 N = 1.157 RS = 0.0244 BV = 36 CJO = 2.1E-010 VJ = 0.7682 M = 0.6 TT=3.9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3042L Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN3042LFDF Spice Model ---------- .SUBCKT DMN3042LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01631 RS 30 3 0.001 RG 20 2 3.19 CGS 2 3 5.244E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.053 + TOX = 6E-008 NSUB = 1E+016 KP = 44.07 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.121E-010 VJ = 0.7018 M = 0.6 .MODEL DSUB D IS = 1.011E-009 N = 1.157 RS = 0.0244 BV = 36 CJO = 2.1E-010 VJ = 0.7682 M = 0.6 TT=3.9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3042LFDF Spice Model v1.0M Last Revised 2016/8/29 *SRC=DMN3051L;DI_DMN3051L;MOSFETs N;Enh;30.0V 5.80A 38.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3051L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 17.0m RS 40 3 1.95m RG 20 2 47.0 CGS 2 3 343p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 370p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.20 KP=15.6 .MODEL DCGD D (CJO=370p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.1n N=1.50 RS=70.7m BV=30.0 + CJO=132p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN3051LDM;DI_DMN3051LDM;MOSFETs N;Enh;30.0V 4.00A 38.0mohms *SYM=POWMOSN .SUBCKT DI_DMN3051LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 17.0m RS 40 3 1.95m RG 20 2 47.0 CGS 2 3 343p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 370p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.20 KP=16.9 .MODEL DCGD D (CJO=370p VJ=0.600 M=0.680 .MODEL DSUB D (IS=16.6n N=1.50 RS=0.102 BV=30.0 + CJO=132p VJ=0.800 M=0.420 TT=214n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN3052L;DI_DMN3052L;MOSFETs N;Enh;30.0V 5.40A 32.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3052L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 14.2m RS 40 3 1.80m RG 20 2 27.8 CGS 2 3 473p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 374p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=1.20 KP=40.0 .MODEL DCGD D (CJO=374p VJ=0.600 M=0.680 .MODEL DSUB D (IS=22.4n N=1.50 RS=83.3m BV=30.0 + CJO=125p VJ=0.800 M=0.420 TT=234n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN3052LSS;DI_DMN3052LSS;MOSFETs N;Enh;30.0V 7.10A 30.0mohms DIodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3052LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 13.2m RS 40 3 1.75m RG 20 2 21.1 CGS 2 3 471p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 384p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=1.20 KP=38.0 .MODEL DCGD D (CJO=384p VJ=0.600 M=0.680 .MODEL DSUB D (IS=29.5n N=1.50 RS=57.7m BV=30.0 + CJO=125p VJ=0.800 M=0.420 TT=254n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN3053L Spice Model ---------- .SUBCKT DMN3053L 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.033 RS 30 3 0.0001 RG 20 2 15.45 CGS 2 3 6.5E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.075 + TOX = 1E-007 + NSUB = 1E+015 KP = 61.95 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.9E-010 VJ = 0.5 M = 0.4455 .MODEL DSUB D IS = 3.1E-010 N = 1.12 RS = 0.016 BV = 31.09 + CJO = 8E-011 VJ = 0.6 M = 0.8 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3053L Spice Model v1.1A Last Revised 2020/03/26 *---------- DMN3055LFDB Spice Model ---------- .SUBCKT DMN3055LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01938 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 35 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3055LFDB Spice Model v1.0M Last Revised 2016/5/9 *---------- DMN3055LFDBQ Spice Model ---------- .SUBCKT DMN3055LFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01938 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 35 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3055LFDBQ Spice Model v1.0M Last Revised 2016/5/9 *---------- DMN3060LCA3 Spice Model ---------- .SUBCKT DMN3060LCA3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01 RS 30 3 0.0001 RG 20 2 21 CGS 2 3 1.196E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.14E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8779 + TOX = 6E-008 NSUB = 1E+016 KP = 8.5 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.5E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.142E-010 N = 1.123 RS = 0.1237 BV = 32.28 + CJO = 1.776E-010 VJ = 0.8 M = 0.6 TT = 3.51E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3060LCA3 Spice Model v1.0J Last Revised 2018/12/24 *---------- DMN3060LVT Spice Model ---------- .SUBCKT DMN3060LVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.036 RS 30 3 0.001 RG 20 2 3.18 CGS 2 3 3.824E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.16 + TOX = 6E-008 NSUB = 1E+016 KP = 26 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.608E-010 VJ = 0.1 M = 0.3464 .MODEL DSUB D IS = 2.655E-010 N = 1.306 RS = 0.01611 BV = 33.35 + CJO = 5.276E-011 VJ = 0.1 M = 0.2922 .MODEL DLIM D IS = 0.0001 .ENDS DMN3060LVT Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMN3060LW Spice Model ---------- .SUBCKT DMN3060LW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.036 RS 30 3 0.001 RG 20 2 3.18 CGS 2 3 3.824E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.16 + TOX = 6E-008 NSUB = 1E+016 KP = 26 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.608E-010 VJ = 0.1 M = 0.3464 .MODEL DSUB D IS = 2.655E-010 N = 1.306 RS = 0.01611 BV = 33.35 + CJO = 5.276E-011 VJ = 0.1 M = 0.2922 .MODEL DLIM D IS = 0.0001 .ENDS DMN3060LW Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMN3060LWQ Spice Model ---------- .SUBCKT DMN3060LWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.036 RS 30 3 0.001 RG 20 2 3.18 CGS 2 3 3.824E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.16 + TOX = 6E-008 NSUB = 1E+016 KP = 26 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.608E-010 VJ = 0.1 M = 0.3464 .MODEL DSUB D IS = 2.655E-010 N = 1.306 RS = 0.01611 BV = 33.35 + CJO = 5.276E-011 VJ = 0.1 M = 0.2922 .MODEL DLIM D IS = 0.0001 .ENDS DMN3060LWQ Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMN3061LCA3 Spice Model ---------- .SUBCKT DMN3061LCA3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 0.0001 RG 20 2 3.7 CGS 2 3 1.23E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.67E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9167 + TOX = 1E-007 NSUB = 1E+015 KP = 13.3 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.3E-011 VJ = 0.8 M = 0.5783 .MODEL DSUB D IS = 1.1E-009 N = 1.32 RS = 0.04647 BV = 32.22 + CJO = 1.72E-010 VJ = 0.9 M = 0.3156 XTI = 0 TT = 3.55E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/7 *---------- DMN3061S Spice Model ---------- .SUBCKT DMN3061S 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0235 RS 30 3 0.0001 RG 20 2 5.54 CGS 2 3 2.05E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.5 + TOX = 1E-007 NSUB = 1E+015 KP = 22.2 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.2E-010 VJ = 0.8 M = 0.48 .MODEL DSUB D IS = 1.5E-010 N = 1.28 RS = 0.0068 BV = 32.46 + CJO = 8.32E-011 VJ = 0.8 M = 0.55 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/08/08 *---------- DMN3061SQ Spice Model ---------- .SUBCKT DMN3061SQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0235 RS 30 3 0.0001 RG 20 2 5.54 CGS 2 3 2.05E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.5 + TOX = 1E-007 NSUB = 1E+015 KP = 22.2 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.2E-010 VJ = 0.8 M = 0.48 .MODEL DSUB D IS = 1.5E-010 N = 1.28 RS = 0.0068 BV = 32.46 + CJO = 8.32E-011 VJ = 0.8 M = 0.55 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/08/08 *---------- DMN3061SVT Spice Model ---------- .SUBCKT DMN3061SVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 0.001 RG 20 2 4.2 CGS 2 3 2.278E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.67E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.389 + TOX = 6E-008 NSUB = 1E+016 KP = 14.4 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.149E-010 VJ = 0.5612 M = 0.4142 .MODEL DSUB D IS = 3.517E-010 N = 1.333 RS = 0.01501 BV = 32.94 + CJO = 5.909E-011 VJ = 0.1 M = 0.2923 .MODEL DLIM D IS = 0.0001 .ENDS DMN3061SVT *Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMN3061SVTQ Spice Model ---------- .SUBCKT DMN3061SVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 0.001 RG 20 2 4.2 CGS 2 3 2.278E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.67E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.389 + TOX = 6E-008 NSUB = 1E+016 KP = 14.4 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.149E-010 VJ = 0.5612 M = 0.4142 .MODEL DSUB D IS = 3.517E-010 N = 1.333 RS = 0.01501 BV = 32.94 + CJO = 5.909E-011 VJ = 0.1 M = 0.2923 .MODEL DLIM D IS = 0.0001 .ENDS DMN3061SVTQ *Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMN3061SW Spice Model ---------- .SUBCKT DMN3061SW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 0.001 RG 20 2 4.2 CGS 2 3 2.278E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.67E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.389 + TOX = 6E-008 NSUB = 1E+016 KP = 14.4 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.149E-010 VJ = 0.5612 M = 0.4142 .MODEL DSUB D IS = 3.517E-010 N = 1.333 RS = 0.01501 BV = 32.94 + CJO = 5.909E-011 VJ = 0.1 M = 0.2923 .MODEL DLIM D IS = 0.0001 .ENDS DMN3061SW *Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMN3061SWQ Spice Model ---------- .SUBCKT DMN3061SWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 0.001 RG 20 2 4.2 CGS 2 3 2.278E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.67E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.389 + TOX = 6E-008 NSUB = 1E+016 KP = 14.4 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.149E-010 VJ = 0.5612 M = 0.4142 .MODEL DSUB D IS = 3.517E-010 N = 1.333 RS = 0.01501 BV = 32.94 + CJO = 5.909E-011 VJ = 0.1 M = 0.2923 .MODEL DLIM D IS = 0.0001 .ENDS DMN3061SWQ *Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMN3065LW Spice Model ---------- .SUBCKT DMN3065LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01938 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 4.156E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 + TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 35 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3065LW Spice Model v1.0M Last Revised 2017/2/14 *---------- DMN3066L Spice Model ---------- .SUBCKT DMN3066L 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0245 RS 30 3 0.0001 RG 20 2 4.75 CGS 2 3 3.1E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.25 + TOX = 1E-007 NSUB = 1E+015 KP = 35 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.2E-010 VJ = 0.8 M = 0.65 .MODEL DSUB D IS = 9.8E-010 N = 1.25 RS = 0.0118 BV = 36.44 + CJO = 4E-011 VJ = 0.7 M = 0.32 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1B Last Revised 2021/08/16 *---------- DMN3066L Spice Model ---------- .SUBCKT DMN3066L 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0245 RS 30 3 0.0001 RG 20 2 4.75 CGS 2 3 3.1E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.25 + TOX = 1E-007 NSUB = 1E+015 KP = 35 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.2E-010 VJ = 0.8 M = 0.65 .MODEL DSUB D IS = 9.8E-010 N = 1.25 RS = 0.0118 BV = 36.44 + CJO = 4E-011 VJ = 0.7 M = 0.32 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1B Last Revised 2021/08/16 *---------- DMN3066LVT Spice Model ---------- .SUBCKT DMN3066LVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02142 RS 30 3 0.0001 RG 20 2 5.1 CGS 2 3 2.887E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.215E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.122 + TOX = 1E-007 NSUB = 1E+016 KP = 39.52 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.3978 M = 0.4269 .MODEL DSUB D IS = 2.911E-009 N = 1.386 RS = 0.0103 BV = 37.05 + CJO = 6.335E-011 VJ = 0.6 M = 0.4709 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/11/21 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3066LVTQ Spice Model ---------- .SUBCKT DMN3066LVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02142 RS 30 3 0.0001 RG 20 2 5.1 CGS 2 3 2.887E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.215E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.122 + TOX = 1E-007 NSUB = 1E+016 KP = 39.52 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.677E-010 VJ = 0.3978 M = 0.4269 .MODEL DSUB D IS = 2.911E-009 N = 1.386 RS = 0.0103 BV = 37.05 + CJO = 6.335E-011 VJ = 0.6 M = 0.4709 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/11/21 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3067LW Spice Model ---------- .SUBCKT DMN3067LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.039 RS 30 3 0.0001 RG 20 2 22.89 CGS 2 3 4.233E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.402 + TOX = 6E-008 NSUB = 1E+016 KP = 23.5 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.278E-010 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 1.14E-009 N = 1.316 RS = 0.02158 BV = 34.8 + CJO = 8.846E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3067LW Spice Model v1.0J Last Revised 2018/11/16 *---------- DMN3069L Spice Model ---------- .SUBCKT DMN3069L 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0125 RS 30 3 0.0001 RG 20 2 4.6 CGS 2 3 2.6E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.45 + TOX = 1E-007 NSUB = 1E+015 KP = 18.5 U0 = 120 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.2E-010 VJ = 0.8 M = 0.7 .MODEL DSUB D IS = 7E-010 N = 1.25 RS = 0.01 BV = 31.7 + CJO = 1E-012 VJ = 0.9 M = 0.32 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/04/08 *---------- DMN3070SSN Spice Model ---------- .SUBCKT DMN3070SSN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009782 RS 30 3 0.001 RG 20 2 1.16 CGS 2 3 7.066E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.066E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.353 + TOX = 6E-008 NSUB = 1E+016 KP = 52.61 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.065E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.251E-010 N = 1.3 RS = 0.004445 BV = 33.26 CJO = 2.225E-010 VJ = 0.1072 M = 0.284 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3070SSN Spice Model v1.0M Last Revised 2016/2/25 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN3071LVT Spice Model ---------- .SUBCKT DMN3071LVT_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.023 RS 30 3 0.001 RG 20 2 4.19 CGS 2 3 1.7E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 + DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 16 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.3E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.464E-010 N = 1.379 RS = 0.01314 BV = 31.89 + CJO = 2.166E-011 VJ = 0.8 M = 0.6 TT = 2.13E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3071LVT Spice Model v1.0M Last Revised 2018/04/09 *---------- DMN30H14DLY Spice Model ---------- .SUBCKT DMN30H14DLY 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5.906 RS 30 3 0.001 RG 20 2 12.33 CGS 2 3 9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.624 + TOX = 6E-008 NSUB = 1E+016 KP = 0.485 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6E-011 VJ = 0.6 M = 0.6666 .MODEL DSUB D IS = 9.555E-009 N = 1.676 RS = 0.1126 BV = 290 CJO = 1E-015 VJ = 0.6 M = 0.7028 TT = 2.2E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN30H14DLY Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN30H4D0L Spice Model ---------- .SUBCKT DMN30H4D0L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.239 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 2E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.514 + TOX = 6E-008 NSUB = 1E+016 KP = 3.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.204E-010 VJ = 0.1 M = 0.5744 .MODEL DSUB D IS = 5.479E-008 N = 1.755 RS = 0.04325 BV = 334 CJO = 1.2E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN30H4D0L Spice Model v1.0M Last Revised 2017/1/18 *---------- DMN30H4D0LFDE Spice Model ---------- .SUBCKT DMN30H4D0LFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.239 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 2E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.514 + TOX = 6E-008 NSUB = 1E+016 KP = 3.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.204E-010 VJ = 0.1 M = 0.5744 .MODEL DSUB D IS = 5.479E-008 N = 1.755 RS = 0.04325 BV = 334 CJO = 1.2E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN30H4D0LFDE Spice Model v1.0M Last Revised 2016/6/16 *---------- DMN30H4D1S Spice Model ---------- .SUBCKT DMN30H4D1S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.317 RS 30 3 0.001 RG 20 2 2.86 CGS 2 3 1.623E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.23E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.863 + TOX = 6E-008 NSUB = 1E+016 KP = 4.5 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.217E-011 VJ = 0.8 M = 0.6443 .MODEL DSUB D IS = 3.932E-010 N = 1.392 RS = 0.026 BV = 265.8 + CJO = 3.377E-011 VJ = 0.8 M = 0.6 TT = 1.684E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN30H4D1S Spice Model v1.0J Last Revised 2018/10/30 *---------- DMN3110LCP3 Spice Model ---------- .SUBCKT DMN3110LCP3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03826 RS 30 3 0.001 RG 20 2 21.38 CGS 2 3 1.1E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8378 + TOX = 6E-008 NSUB = 1E+016 KP = 13.63 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.572E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.441E-010 N = 1.189 RS = 0.1195 BV = 30.8 CJO = 2E-010 VJ = 0.6 M = 0.6 TT=2.6E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3110LCP3 Spice Model v1.0M Last Revised 2016/7/7 *---------- DMN3110S Spice Model ---------- .SUBCKT DMN3110S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01593 RS 30 3 0.001 RG 20 2 1.4 CGS 2 3 2.711E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 9.816 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.317E-010 VJ = 0.2783 M = 0.4405 .MODEL DSUB D IS = 1E-015 N = 0.8731 RS = 0.04482 BV = 35 CJO = 1.086E-011 VJ = 0.4101 M = 0.9 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3110S Spice Model v1.0 Last Revised 2011/8/15 *---------- DMN3110SQ Spice Model ---------- .SUBCKT DMN3110SQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01593 RS 30 3 0.001 RG 20 2 1.4 CGS 2 3 2.711E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 9.816 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.317E-010 VJ = 0.2783 M = 0.4405 .MODEL DSUB D IS = 1E-015 N = 0.8731 RS = 0.04482 BV = 35 CJO = 1.086E-011 VJ = 0.4101 M = 0.9 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3110SQ Spice Model v1.0 Last Revised 2018/8/15 *SRC=DMN3112S;DI_DMN3112S;MOSFETs N;Enh;30.0V 5.80A 57.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3112S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 26.1m RS 40 3 2.42m RG 20 2 105 CGS 2 3 218p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 228p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.20 KP=10.2 .MODEL DCGD D (CJO=228p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.1n N=1.50 RS=60.3m BV=30.0 + CJO=83.9p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN3112SQ Spice Model ---------- .SUBCKT DMN3112SQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01593 RS 30 3 0.001 RG 20 2 1.4 CGS 2 3 2.711E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 9.816 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.317E-010 VJ = 0.2783 M = 0.4405 .MODEL DSUB D IS = 1E-015 N = 0.8731 RS = 0.04482 BV = 35 CJO = 1.086E-011 VJ = 0.4101 M = 0.9 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3112SQ Spice Model v1.0 Last Revised 2018/8/15 *SRC=DMN3112SSS;DI_DMN3112SSS;MOSFETs N;Enh;30.0V 6.00A 57.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3112SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 26.1m RS 40 3 2.42m RG 20 2 56.0 CGS 2 3 218p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 458p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=1.93m VTO=2.20 KP=4.11 .MODEL DCGD D (CJO=458p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.9n N=1.50 RS=75.0m BV=30.0 + CJO=128p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN3115UDM;DI_DMN3115UDM;MOSFETs N;Enh;30.0V 3.20A 60.0mohms Diodes Inc MOSFET .MODEL DI_DMN3115UDM NMOS( LEVEL=1 VTO=1.00 KP=10.7 GAMMA=1.24 + PHI=.75 LAMBDA=50.9u RD=8.40m RS=8.40m + IS=1.60p PB=0.800 MJ=0.460 CBD=76.2p + CBS=91.4p CGSO=648n CGDO=540n CGBO=3.57u ) * -- Assumes default L=100U W=100U -- *---------- DMN313DLT Spice Model ---------- .SUBCKT DMN313DLT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.188 RS 30 3 0.001 RG 20 2 127.7 CGS 2 3 3.079E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.099 + TOX = 6E-008 NSUB = 1E+017 KP = 1.832 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 1.712E-011 VJ = 0.6 M = 0.5004 .MODEL DSUB D IS = 7.2E-007 N = 2.594 RS = 0.03889 + BV = 35 CJO = 4.301E-012 VJ = 0.2 M = 0.1735 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN313DLT Spice Model v1.0 Last Revised 2014/6/6 *SRC=DMN3150L;DI_DMN3150L;MOSFETs N;Enh;28.0V 3.10A 85.0mohms DIODES INC MOSFET .MODEL DI_DMN3150L NMOS( LEVEL=1 VTO=1.40 KP=2.90u GAMMA=1.74 + PHI=.75 LAMBDA=145u RD=11.9m RS=11.9m + IS=1.55p PB=0.800 MJ=0.460 CBD=64.7p + CBS=77.6p CGSO=576n CGDO=480n CGBO=1.99u ) * -- Assumes default L=100U W=100U -- *SRC=DMN3150LW;DI_DMN3150LW;MOSFETs N;Enh;28.0V 1.60A 88.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3150LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 40.8m RS 40 3 3.20m RG 20 2 93.7 CGS 2 3 257p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 219p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=58.3k THETA=80.0m + ETA=2.00m VTO=1.40 KP=21.8 .MODEL DCGD D (CJO=219p VJ=0.600 M=0.680 .MODEL DSUB D (IS=6.64n N=1.50 RS=0.256 BV=28.0 + CJO=85.0p VJ=0.800 M=0.420 TT=162n .MODEL DLIM D (IS=100U) .ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=21/03/2014 *VERSION=1 .SUBCKT DMN3190LDW 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 50E-3 RS 23 3 Rmod1 100E-3 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 90E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 84E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.5 TOX=7.3E-8 NSUB=6E+16 KP=7.5 NFS=2.8E+12 IS=.5E-15 N=10) .MODEL DCGD D (CJO =26E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 1E-13 N=1.0 RS=0.07 BV=35 CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMN3190LDWQ Spice Model ---------- .SUBCKT DMN3190LDWQ 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 50E-3 RS 23 3 Rmod1 100E-3 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 90E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 84E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.5 TOX=7.3E-8 NSUB=6E+16 KP=7.5 NFS=2.8E+12 IS=.5E-15 N=10) .MODEL DCGD D (CJO =26E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 1E-13 N=1.0 RS=0.07 BV=35 CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6) .ENDS DMN3190LDWQ Diodes Spice Model v1.0J Last Revised 2020/01/31 *---------- DMN31D4UFZ Spice Model ---------- .SUBCKT DMN31D4UFZ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0M Last Revised 2021/11/30 *---------- DMN31D5L Spice Model ---------- .SUBCKT DMN31D5L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.06542 RS 30 3 0.001 RG 20 2 54.5 CGS 2 3 4.855E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.544 + TOX = 6E-008 NSUB = 1E+016 KP = 1.173 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.049E-007 N = 2.347 RS = 0.04325 BV = 31.7 CJO = 1.735E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN31D5L Spice Model v1.0M Last Revised 2018/04/02 *---------- DMN31D5UDA Spice Model ---------- .SUBCKT DMN31D5UDA 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0M Last Revised 2018/04/30 *---------- DMN31D5UDAQ Spice Model ---------- .SUBCKT DMN31D5UDAQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0M Last Revised 2018/04/30 *---------- DMN31D5UDR4 Spice Model ---------- .SUBCKT DMN31D5UDR4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0M Last Revised 2022/11/30 *---------- DMN31D5UDW Spice Model ---------- .SUBCKT DMN31D5UDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0M Last Revised 2022/11/30 *---------- DMN31D5UFA Spice Model ---------- .SUBCKT DMN31D5UFA 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0M Last Revised 2022/11/30 *---------- DMN31D5UFO Spice Model ---------- .SUBCKT DMN31D5UFO 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0M Last Revised 2020/01/10 *---------- DMN31D5UFZ Spice Model ---------- .SUBCKT DMN31D5UFZ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 CJO = 1.25E-011 VJ = 0.8 + M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN31D5UFZ Spice Model v1.0M Last Revised 2018/04/30 *---------- DMN31D5UFZQ Spice Model ---------- .SUBCKT DMN31D5UFZQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.45 RS 30 3 0.001 RG 20 2 209.2 CGS 2 3 1.85E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7793 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9996 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.296E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.371 RS = 1.888 BV = 32.84 + CJO = 1.25E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0M Last Revised 2021/11/30 *---------- DMN31D6UT Spice Model ---------- .SUBCKT DMN31D6UT D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6513 RS 30 3 1E-008 RG 20 2 252 CGS 2 3 1.074E-014 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.159 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5657 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 8.453E-012 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 9.654E-008 N = 2.227 RS = 0.3077 BV = 35 CJO = 1.069E-014 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN31D6UT Spice Model v1.0 Last Revised 2015/9/7 *SRC=DMN3200U;DI_DMN3200U;MOSFETs N;Enh;30.0V 2.20A 90.0mohms Diodes Inc MOSFET .MODEL DI_DMN3200U NMOS( LEVEL=1 VTO=1.00 KP=11.4 GAMMA=1.24 + PHI=.75 LAMBDA=139u RD=12.6m RS=12.6m + IS=1.10p PB=0.800 MJ=0.460 CBD=103p + CBS=123p CGSO=420n CGDO=350n CGBO=2.13u ) * -- Assumes default L=100U W=100U -- *---------- DMN3270UVT Spice Model ---------- .SUBCKT DMN3270UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1391 RS 30 3 0.001 RG 20 2 3.1 CGS 2 3 1.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.12E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7869 + TOX = 6E-008 NSUB = 1E+016 KP = 26.19 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.068E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2E-009 N = 1.409 RS = 0.03996 BV = 39.96 + CJO = 1.25E-010 VJ = 0.8 M = 0.6 TT = 1.857E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3270UVT Spice Model v1.0J Last Revised 2018/06/08 *---------- DMN32D0LFB4 Spice Model ---------- .SUBCKT DMN32D0LFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.4804 RS 30 3 0.001 RG 20 2 81.2 CGS 2 3 4.19E-11 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-11 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+05 ETA = 0.001 VTO = 0.9174 + TOX = 6E-08 NSUB = 1E+16 KP = 3.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.7E-11 VJ = 0.6001 M = 0.8 .MODEL DSUB D IS = 4.469E-09 N = 1.734 RS = 0.1185 BV = 33.87 + CJO = 4.3E-12 VJ = 0.6 M = 0.7889 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN32D0LFB4 Spice Model v1.0 Last Revised 2018/08/24 *---------- DMN32D0LV Spice Model ---------- .SUBCKT DMN32D0LV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.4804 RS 30 3 0.001 RG 20 2 81.2 CGS 2 3 4.19E-11 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-11 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+05 ETA = 0.001 VTO = 0.9174 + TOX = 6E-08 NSUB = 1E+16 KP = 3.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.7E-11 VJ = 0.6001 M = 0.8 .MODEL DSUB D IS = 4.469E-09 N = 1.734 RS = 0.1185 BV = 33.87 + CJO = 4.3E-12 VJ = 0.6 M = 0.7889 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN32D0LV Spice Model v1.0 Last Revised 2022/05/24 *---------- DMN32D0LVQ Spice Model ---------- .SUBCKT DMN32D0LVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.4804 RS 30 3 0.001 RG 20 2 81.2 CGS 2 3 4.19E-11 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-11 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+05 ETA = 0.001 VTO = 0.9174 + TOX = 6E-08 NSUB = 1E+16 KP = 3.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.7E-11 VJ = 0.6001 M = 0.8 .MODEL DSUB D IS = 4.469E-09 N = 1.734 RS = 0.1185 BV = 33.87 + CJO = 4.3E-12 VJ = 0.6 M = 0.7889 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN32D0LVQ Spice Model v1.0 Last Revised 2022/05/24 *SRC=DMN32D2LDF;DI_DMN32D2LDF;MOSFETs N;Enh;30.0V 0.400A 1.20ohms Diodes Inc MOSFET .MODEL DI_DMN32D2LDF NMOS( LEVEL=1 VTO=1.20 KP=0.100 GAMMA=1.49 + PHI=.75 LAMBDA=555u RD=0.168 RS=0.168 + IS=200f PB=0.800 MJ=0.460 CBD=13.1p + CBS=15.7p CGSO=43.2n CGDO=36.0n CGBO=311n ) * -- Assumes default L=100U W=100U -- *---------- DMN32D2LFB4 Spice Model ---------- .SUBCKT DMN32D2LFB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.55 RS 30 3 0.0001 RG 20 2 74.82 CGS 2 3 3.337E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-013 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8793 + TOX = 1E-007 NSUB = 1E+015 KP = 2.9 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.47E-011 VJ = 0.5 M = 0.4225 .MODEL DSUB D IS = 9.7E-010 N = 1.369 RS = 0.4395 BV = 67.1 + CJO = 5.1E-012 VJ = 0.6 M = 0.3472 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/11/09 .SUBCKT DMN32D2LV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.55 RS 30 3 0.0001 RG 20 2 74.82 CGS 2 3 3.337E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-013 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8793 + TOX = 1E-007 NSUB = 1E+015 KP = 2.9 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.47E-011 VJ = 0.5 M = 0.4225 .MODEL DSUB D IS = 9.7E-010 N = 1.369 RS = 0.4395 BV = 67.1 + CJO = 5.1E-012 VJ = 0.6 M = 0.3472 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/11/09 *---------- DMN32D4SDW Spice Model ---------- .SUBCKT DMN32D4SDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.08876 RS 30 3 0.001 RG 20 2 91.88 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.728 + TOX = 6E-008 NSUB = 1E+016 KP = 1.286 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.92E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.377E-010 N = 1.449 RS = 0.8337 BV = 30 CJO = 1.5E-011 VJ = 0.6427 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN32D4SDW Spice Model v1.0 Last Revised 2015/8/27 *---------- DMN32M6LCA8 Spice Model ---------- .SUBCKT DMN32M6LCA8 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0006594 RS 30 3 0.0001 RG 20 2 424.2 CGS 2 3 2.598E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.344E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.206 + TOX = 1E-07 NSUB = 1E+15 KP = 498.8 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.628E-10 VJ = 0.8 M = 0.3717 .MODEL DSUB D IS = 1.28E-09 N = 1.293 RS = 0.02244 BV = 33.04 + CJO = 8.707E-10 VJ = 1.1 M = 0.2531 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/09/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=02NOV2010 *VERSION=2 * .SUBCKT DMN3300U 10 20 30 * TERMINALS: D G S M1 10 20 30 30 DMOS L=100U W=100U .MODEL DMOS NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24 + PHI=.75 LAMBDA=127u RD=21.0m RS=21.0m + IS=1.00p PB=0.800 MJ=0.460 CBD=39.7p + CBS=47.7p CGSO=276n CGDO=230n CGBO=1.42u ) .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=02NOV2010 *VERSION=2 * .SUBCKT DMN3300UQ 10 20 30 * TERMINALS: D G S M1 10 20 30 30 DMOS L=100U W=100U .MODEL DMOS NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24 + PHI=.75 LAMBDA=127u RD=21.0m RS=21.0m + IS=1.00p PB=0.800 MJ=0.460 CBD=39.7p + CBS=47.7p CGSO=276n CGDO=230n CGBO=1.42u ) .ENDS * *$ *---------- DMN3350LDW Spice Model ---------- .SUBCKT DMN3350LDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1497 RS 30 3 0.0001 RG 20 2 536.9 CGS 2 3 3.198E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.38E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.491 + TOX = 1E-007 NSUB = 1E+014 KP = 1.919 U0 = 639.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.383E-011 VJ = 0.5 M = 0.3776 .MODEL DSUB D IS = 7.404E-011 N = 1.358 RS = 0.05909 BV = 40.95 + CJO = 1.558E-011 VJ = 0.6 M = 0.4071 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/01/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3350LDWQ Spice Model ---------- .SUBCKT DMN3350LDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1497 RS 30 3 0.0001 RG 20 2 536.9 CGS 2 3 3.198E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.38E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.491 + TOX = 1E-007 NSUB = 1E+014 KP = 1.919 U0 = 639.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.383E-011 VJ = 0.5 M = 0.3776 .MODEL DSUB D IS = 7.404E-011 N = 1.358 RS = 0.05909 BV = 40.95 + CJO = 1.558E-011 VJ = 0.6 M = 0.4071 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/01/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN3350LFB-7B Spice Model ---------- .SUBCKT DMN3350LFB_7B 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1497 RS 30 3 0.0001 RG 20 2 536.9 CGS 2 3 3.198E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.38E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.491 + TOX = 1E-007 NSUB = 1E+014 KP = 1.919 U0 = 639.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.383E-011 VJ = 0.5 M = 0.3776 .MODEL DSUB D IS = 7.404E-011 N = 1.358 RS = 0.05909 BV = 40.95 + CJO = 1.558E-011 VJ = 0.6 M = 0.4071 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/01/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN33D8L Spice Model ---------- .SUBCKT DMN33D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.001 RG 20 2 54.5 CGS 2 3 4.534E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.548 + TOX = 6E-008 NSUB = 1E+016 KP = 1.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.473E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.496E-010 N = 1.419 RS = 0.3976 BV = 32.6 CJO = 4.579E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN33D8L Spice Model v1.0W Last Revised 2018/11/1 *---------- DMN33D8LDWQ Spice Model ---------- .SUBCKT DMN33D8LDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.001 RG 20 2 54.5 CGS 2 3 4.534E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.548 + TOX = 6E-008 NSUB = 1E+016 KP = 1.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.473E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.496E-010 N = 1.419 RS = 0.3976 BV = 32.6 CJO = 4.579E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN33D8LDWQ Spice Model v1.0W Last Revised 2020/07/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN33D8LVQ Spice Model ---------- .SUBCKT DMN33D8LVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.001 RG 20 2 54.5 CGS 2 3 4.534E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.548 + TOX = 6E-008 NSUB = 1E+016 KP = 1.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.473E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.496E-010 N = 1.419 RS = 0.3976 BV = 32.6 CJO = 4.579E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN33D8LVQ Spice Model v1.0W Last Revised 2021/11/1 *---------- DMN33D9LV Spice Model ---------- .SUBCKT DMN33D9LV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.001 RG 20 2 54.5 CGS 2 3 4.534E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.548 + TOX = 6E-008 NSUB = 1E+016 KP = 1.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.473E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.496E-010 N = 1.419 RS = 0.3976 BV = 32.6 CJO = 4.579E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN33D9LV Spice Model v1.0W Last Revised 2019/08/1 *---------- DMN3401LDW Spice Model ---------- .SUBCKT DMN3401LDW_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04 RS 30 3 0.0001 RG 20 2 58.2 CGS 2 3 4.218E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.44 + TOX = 6E-008 NSUB = 1E+016 KP = 1.195 U0 = 250 KAPPA = 10 .MODEL DCGD D CJO = 2.5E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1E-012 N = 1.814 RS = 7.03 BV = 33.9 + CJO = 9.238E-012 VJ = 0.7728 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3401LDW Spice Model v1.0J Last Revised 2018/01/14 *---------- DMN3401LDWQ Spice Model ---------- .SUBCKT DMN3401LDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04 RS 30 3 0.0001 RG 20 2 58.2 CGS 2 3 4.218E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.44 + TOX = 6E-008 NSUB = 1E+016 KP = 1.195 U0 = 250 KAPPA = 10 .MODEL DCGD D CJO = 2.5E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1E-012 N = 1.814 RS = 7.03 BV = 33.9 + CJO = 9.238E-012 VJ = 0.7728 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3401LDWQ Spice Model v1.0J Last Revised 2019/10/14 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN3401LV Spice Model ---------- .SUBCKT DMN3401LV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.001 RG 20 2 54.5 CGS 2 3 4.534E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.548 + TOX = 6E-008 NSUB = 1E+016 KP = 1.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.473E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.496E-010 N = 1.419 RS = 0.3976 BV = 32.6 CJO = 4.579E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3401LV Spice Model v1.0W Last Revised 2022/11/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN3401LVQ Spice Model ---------- .SUBCKT DMN3401LVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.001 RG 20 2 54.5 CGS 2 3 4.534E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.548 + TOX = 6E-008 NSUB = 1E+016 KP = 1.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.473E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.496E-010 N = 1.419 RS = 0.3976 BV = 32.6 CJO = 4.579E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3401LVQ Spice Model v1.0W Last Revised 2022/11/1 *DIODES_INC_SPICE_MODEL DMN3404L *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=22Jan2013 *VERSION=1.1 .SUBCKT DMN3404L 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 10E-3 RS 23 3 Rmod1 12E-3 RG 20 22 1.8 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 320E-12 EGD 12 0 2 1 1 REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 500E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=2 TOX=6.4E-8 NSUB=5E+16 KP=33 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 162E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=50E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *---------- DMN34D0U Spice Model ---------- .SUBCKT DMN34D0U 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3445 RS 30 3 0.0001 RG 20 2 377.7 CGS 2 3 1.974E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.810E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8052 + TOX = 1E-007 NSUB = 1E+015 KP = 1.932 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.54E-011 VJ = 0.5 M = 0.4437 .MODEL DSUB D IS = 2.41E-009 N = 1.398 RS = 0.1559 BV = 25.5 + CJO = 1.205E-011 VJ = 0.6 M = 0.3328 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *DIODES_INC_SPICE_MODEL DMN3730U N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1DEC2011 *VERSION=1 .SUBCKT DMN3730 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 10E-3 RG 20 22 70 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 120E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 90E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=.87 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=35 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6) .ENDS .SIMULATOR DEFAULT *---------- DMN3730UFB Spice Model ---------- .SUBCKT DMN3730UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.254 RS 30 3 0.001 RG 20 2 64.1 CGS 2 3 6.303E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8482 + TOX = 6E-008 NSUB = 1E+016 KP = 6.297 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.864E-011 VJ = 0.6391 M = 0.6 .MODEL DSUB D IS = 1.379E-008 N = 1.49 RS = 0.3453 BV = 34 CJO = 7E-012 VJ = 0.6 M = 0.7813 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3730UFB Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN3730UFB4 Spice Model ---------- .SUBCKT DMN3730UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.254 RS 30 3 0.001 RG 20 2 64.1 CGS 2 3 6.303E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8482 + TOX = 6E-008 NSUB = 1E+016 KP = 6.297 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.864E-011 VJ = 0.6391 M = 0.6 .MODEL DSUB D IS = 1.379E-008 N = 1.49 RS = 0.3453 BV = 34 CJO = 7E-012 VJ = 0.6 M = 0.7813 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3730UFB4 Spice Model v1.0M Last Revised 2016/5/17 *---------- DMN3731U Spice Model ---------- .SUBCKT DMN3731U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.22 RS 30 3 0.0001 RG 20 2 902.3 CGS 2 3 9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 9.8 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 8.85E-010 N = 1.271 RS = 0.2762 BV = 38.34 + CJO = 1.2E-011 VJ = 0.8 M = 0.6 TT = 2.94E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3731U Spice Model v1.0J Last Revised 2019/03/16 *---------- DMN3731UFB4 Spice Model ---------- .SUBCKT DMN3731UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.22 RS 30 3 0.0001 RG 20 2 902.3 CGS 2 3 9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 9.8 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 8.85E-010 N = 1.271 RS = 0.2762 BV = 38.34 + CJO = 1.2E-011 VJ = 0.8 M = 0.6 TT = 2.94E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3731UFB4 Spice Model v1.0J Last Revised 2019/03/16 *---------- DMN3731UFR4 Spice Model ---------- .SUBCKT DMN3731UFR4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.22 RS 30 3 0.0001 RG 20 2 902.3 CGS 2 3 9E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 9.8 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 8.85E-010 N = 1.271 RS = 0.2762 BV = 38.34 + CJO = 1.2E-011 VJ = 0.8 M = 0.6 TT = 2.94E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3731UFR4 Spice Model v1.0J Last Revised 2024/03/16 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN3732U Spice Model ---------- .SUBCKT DMN3732U 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2289 RS 30 3 0.0001 RG 20 2 44.1 CGS 2 3 5.285E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.24E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.7254 + TOX = 1E-007 NSUB = 4.3E+015 KP = 5.36 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.836E-011 VJ = 0.5 M = 0.4811 .MODEL DSUB D IS = 6E-011 N = 1.43 RS = 0.0033 BV = 34.28 + CJO = 1.351E-011 VJ = 0.6 M = 0.396 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2022/10/11 *---------- DMN3732UFB4 Spice Model ---------- .SUBCKT DMN3732UFB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2289 RS 30 3 0.0001 RG 20 2 44.1 CGS 2 3 5.285E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.24E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.7254 + TOX = 1E-007 NSUB = 4.3E+015 KP = 5.36 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.836E-011 VJ = 0.5 M = 0.4811 .MODEL DSUB D IS = 6E-011 N = 1.43 RS = 0.0033 BV = 34.28 + CJO = 1.351E-011 VJ = 0.6 M = 0.396 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2022/10/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN3732UFB4Q Spice Model ---------- .SUBCKT DMN3732UFB4Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2289 RS 30 3 0.0001 RG 20 2 44.1 CGS 2 3 5.285E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.24E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.7254 + TOX = 1E-007 NSUB = 4.3E+015 KP = 5.36 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.836E-011 VJ = 0.5 M = 0.4811 .MODEL DSUB D IS = 6E-011 N = 1.43 RS = 0.0033 BV = 34.28 + CJO = 1.351E-011 VJ = 0.6 M = 0.396 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2022/10/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN3732UQ Spice Model ---------- .SUBCKT DMN3732UQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2289 RS 30 3 0.0001 RG 20 2 44.1 CGS 2 3 5.285E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.24E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.7254 + TOX = 1E-007 NSUB = 4.3E+015 KP = 5.36 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.836E-011 VJ = 0.5 M = 0.4811 .MODEL DSUB D IS = 6E-011 N = 1.43 RS = 0.0033 BV = 34.28 + CJO = 1.351E-011 VJ = 0.6 M = 0.396 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2022/10/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN3732UVT Spice Model ---------- .SUBCKT DMN3732UVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2289 RS 30 3 0.0001 RG 20 2 44.1 CGS 2 3 5.285E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.24E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.7254 + TOX = 1E-007 NSUB = 4.3E+015 KP = 5.36 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.836E-011 VJ = 0.5 M = 0.4811 .MODEL DSUB D IS = 6E-011 N = 1.43 RS = 0.0033 BV = 34.28 + CJO = 1.351E-011 VJ = 0.6 M = 0.396 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2022/10/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN3732UVTQ Spice Model ---------- .SUBCKT DMN3732UVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2289 RS 30 3 0.0001 RG 20 2 44.1 CGS 2 3 5.285E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.24E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.7254 + TOX = 1E-007 NSUB = 4.3E+015 KP = 5.36 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.836E-011 VJ = 0.5 M = 0.4811 .MODEL DSUB D IS = 6E-011 N = 1.43 RS = 0.0033 BV = 34.28 + CJO = 1.351E-011 VJ = 0.6 M = 0.396 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2022/10/11 *---------- DMN38M1SCA10 Spice Model ---------- .SUBCKT DMN38M1SCA10 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004161 RS 30 3 0.001 RG 20 2 436.8 CGS 2 3 1.44E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.229 + TOX = 6E-008 NSUB = 1E+016 KP = 141.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.255E-010 N = 1.24 RS = 0.003684 BV = 32 CJO = 4.715E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN38M1SCA10 Spice Model v1.0M Last Revised 2017/3/23 *---------- DMN3900UFA Spice Model ---------- .SUBCKT DMN3900UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3262 RS 30 3 0.001 RG 20 2 467 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.031E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 0.9767 + TOX = 6E-008 NSUB = 1E+016 KP = 3.291 U0 = 400 KAPPA = 8.238 .MODEL DCGD D CJO = 2.804E-011 VJ = 0.04193 M = 0.3358 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 3.048E-012 VJ = 0.1 M = 0.1882 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 7.551E-009 N = 22.09 BV = 2.453 .ENDS *Diodes DMN3900UFA Spice Model v2.0 Last Revised 2014/2/18 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN39M1LFVW Spice Model ---------- .SUBCKT DMN39M1LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0019 RS 30 3 0.0001 RG 20 2 2.44 CGS 2 3 2.02E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.15 + TOX = 1E-007 NSUB = 1E+015 KP = 140.5 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.2E-010 VJ = 0.6 M = 0.4 .MODEL DSUB D IS = 1E-009 N = 1.27 RS = 0.0012 BV = 34.86 + CJO = 4.005E-010 VJ = 0.6 M = 0.52 XTI = 0 TT = 8.28E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/07/08 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN39M1LFVWQ Spice Model ---------- .SUBCKT DMN39M1LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0019 RS 30 3 0.0001 RG 20 2 2.44 CGS 2 3 2.02E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.15 + TOX = 1E-007 NSUB = 1E+015 KP = 140.5 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.2E-010 VJ = 0.6 M = 0.4 .MODEL DSUB D IS = 1E-009 N = 1.27 RS = 0.0012 BV = 34.86 + CJO = 4.005E-010 VJ = 0.6 M = 0.52 XTI = 0 TT = 8.28E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2024/04/01 *---------- DMN39M1LK3 Spice Model ---------- .SUBCKT DMN39M1LK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0019 RS 30 3 0.0001 RG 20 2 2.44 CGS 2 3 2.02E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.15 + TOX = 1E-007 NSUB = 1E+015 KP = 140.5 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.2E-010 VJ = 0.6 M = 0.4 .MODEL DSUB D IS = 1E-009 N = 1.27 RS = 0.0012 BV = 34.86 + CJO = 4.005E-010 VJ = 0.6 M = 0.52 XTI = 0 TT = 8.28E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/07/08 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN39M1LSS Spice Model ---------- .SUBCKT DMN39M1LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0019 RS 30 3 0.0001 RG 20 2 2.44 CGS 2 3 2.02E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.15 + TOX = 1E-007 NSUB = 1E+015 KP = 140.5 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.2E-010 VJ = 0.6 M = 0.4 .MODEL DSUB D IS = 1E-009 N = 1.27 RS = 0.0012 BV = 34.86 + CJO = 4.005E-010 VJ = 0.6 M = 0.52 XTI = 0 TT = 8.28E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/07/08 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN39M1LSSQ Spice Model ---------- .SUBCKT DMN39M1LSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0019 RS 30 3 0.0001 RG 20 2 2.44 CGS 2 3 2.02E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.15 + TOX = 1E-007 NSUB = 1E+015 KP = 140.5 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.2E-010 VJ = 0.6 M = 0.4 .MODEL DSUB D IS = 1E-009 N = 1.27 RS = 0.0012 BV = 34.86 + CJO = 4.005E-010 VJ = 0.6 M = 0.52 XTI = 0 TT = 8.28E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/07/08 *---------- DMN4008LFG Spice Model ---------- .SUBCKT DMN4008LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003002 RS 30 3 0.001 RG 20 2 0.84 CGS 2 3 3.466E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.265 + TOX = 6E-008 NSUB = 1E+016 KP = 130.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.46E-009 VJ = 0.7699 M = 0.6 .MODEL DSUB D IS = 2.315E-010 N = 1.183 RS = 0.001155 BV = 49 CJO = 4.053E-010 VJ = 0.6 M = 0.6 TT = 9.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4008LFG Spice Model v1.0M Last Revised 2018/2/21 *---------- DMN4010LFG Spice Model ---------- .SUBCKT DMN4010LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005483 RS 30 3 0.001 RG 20 2 1.64 CGS 2 3 1.736E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.274 + TOX = 6E-008 NSUB = 1E+017 KP = 95.33 KAPPA = 24.52 U0 = 400 .MODEL DCGD D CJO = 8.624E-010 VJ = 0.3663 M = 0.4967 .MODEL DSUB D IS = 2.495E-010 N = 1.227 RS = 0.003519 + BV = 45 CJO = 7.592E-010 VJ = 0.3012 M = 0.5211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4010LFG Spice Model v1.0 Last Revised 2014/8/04 *---------- DMN4010LK3 Spice Model ---------- .SUBCKT DMN4010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005483 RS 30 3 0.001 RG 20 2 1.64 CGS 2 3 1.736E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.274 + TOX = 6E-008 NSUB = 1E+017 KP = 95.33 KAPPA = 24.52 U0 = 400 .MODEL DCGD D CJO = 8.624E-010 VJ = 0.3663 M = 0.4967 .MODEL DSUB D IS = 2.495E-010 N = 1.227 RS = 0.003519 + BV = 45 CJO = 7.592E-010 VJ = 0.3012 M = 0.5211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4010LK3 Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN4020LFDE Spice Model ---------- .SUBCKT DMN4020LFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007676 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.176E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4020LFDE Spice Model v1.0 Last Revised 2015/6/17 *---------- DMN4020LFDEQ Spice Model ---------- .SUBCKT DMN4020LFDEQ 10 20 30 * TERMINALS: D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0102 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.14E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.602 + TOX = 6E-008 + NSUB = 1E+016 KP = 34.17 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.385E-010 VJ = 0.8341 M = 0.5669 .MODEL DSUB D IS = 2.232E-010 N = 1.286 RS = 0.00412 BV = 45.47 + CJO = 1.724E-010 VJ = 0.9 M = 0.7358 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4020LFDEQ Spice Model v1.1 Last Revised 2020/06/09 *---------- DMN4026SK3 Spice Model ---------- .SUBCKT DMN4026SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007676 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.176E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4026SK3 Spice Model v1.0 Last Revised 2015/6/17 *---------- DMN4026SSD Spice Model ---------- .SUBCKT DMN4026SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008754 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 + TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4026SSD Spice Model v1.0 Last Revised 2014/2/5 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN4026SSDQ Spice Model ---------- .SUBCKT DMN4026SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008754 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 + TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4026SSDQ Spice Model v1.0 Last Revised 2014/2/5 *---------- DMN4027SSD Spice Model ---------- .SUBCKT DMN4027SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007676 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.176E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4027SSD Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN4030LK3 Spice Model ---------- .SUBCKT DMN4030LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01116 RS 30 3 0.001 RG 20 2 2.15 CGS 2 3 7.986E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.266 + TOX = 6E-008 NSUB = 1E+016 KP = 50.57 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.492E-010 VJ = 0.7991 M = 0.6 .MODEL DSUB D IS = 2.236E-010 N = 1.265 RS = 0.006441 BV = 45 CJO = 2.221E-010 VJ = 0.6 M = 0.6035 TT = 4.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4030LK3 Spice Model v1.0M Last Revised 2018/2/21 *---------- DMN4030LK3Q Spice Model ---------- .SUBCKT DMN4030LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01116 RS 30 3 0.001 RG 20 2 2.15 CGS 2 3 7.986E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.266 + TOX = 6E-008 NSUB = 1E+016 KP = 50.57 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.492E-010 VJ = 0.7991 M = 0.6 .MODEL DSUB D IS = 2.236E-010 N = 1.265 RS = 0.006441 BV = 45 + CJO = 2.221E-010 VJ = 0.6 M = 0.6035 TT = 4.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4030LK3Q Spice Model v1.0M Last Revised 2018/2/21 *---------- DMN4031SSD Spice Model ---------- .SUBCKT DMN4031SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.009995 RG 20 2 1.56 CGS 2 3 8.311E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 3.195 + TOX = 6E-008 NSUB = 1E+016 KP = 26.57 U0 = 400 KAPPA = 32.33 .MODEL DCGD D CJO = 3.144E-010 VJ = 0.09587 M = 0.3239 .MODEL DSUB D IS = 1.133E-011 N = 1.136 RS = 1.044E-015 BV = 40 CJO = 1.281E-010 VJ = 0.3722 M = 0.5383 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4031SSD Spice Model v1.0 Last Revised 2011/8/15 *---------- DMN4031SSDQ Spice Model ---------- .SUBCKT DMN4031SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.009995 RG 20 2 1.56 CGS 2 3 8.311E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 3.195 + TOX = 6E-008 NSUB = 1E+016 KP = 26.57 U0 = 400 KAPPA = 32.33 .MODEL DCGD D CJO = 3.144E-010 VJ = 0.09587 M = 0.3239 .MODEL DSUB D IS = 1.133E-011 N = 1.136 RS = 1.044E-015 BV = 40 CJO = 1.281E-010 VJ = 0.3722 M = 0.5383 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4031SSDQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN4034SSD Spice Model ---------- .SUBCKT DMN4034SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01116 RS 30 3 0.001 RG 20 2 2.15 CGS 2 3 7.986E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.266 + TOX = 6E-008 NSUB = 1E+016 KP = 50.57 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.492E-010 VJ = 0.7991 M = 0.6 .MODEL DSUB D IS = 2.236E-010 N = 1.265 RS = 0.006441 BV = 45 CJO = 2.221E-010 VJ = 0.6 M = 0.6035 TT = 4.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4034SSD Spice Model v1.0M Last Revised 2018/2/21 *---------- DMN4034SSS Spice Model ---------- .SUBCKT DMN4034SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01116 RS 30 3 0.001 RG 20 2 2.15 CGS 2 3 7.986E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.266 + TOX = 6E-008 NSUB = 1E+016 KP = 50.57 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.492E-010 VJ = 0.7991 M = 0.6 .MODEL DSUB D IS = 2.236E-010 N = 1.265 RS = 0.006441 BV = 45 CJO = 2.221E-010 VJ = 0.6 M = 0.6035 TT = 4.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4034SSS Spice Model v1.0M Last Revised 2018/2/21 *---------- DMN4034SSSQ Spice Model ---------- .SUBCKT DMN4034SSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0135 RS 30 3 0.0001 RG 20 2 2.1 CGS 2 3 8.181E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.17E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.2 + TOX = 1E-007 NSUB = 1E+016 KP = 33 U0 = 100.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.205E-010 VJ = 0.8 M = 0.5126 .MODEL DSUB D IS = 5E-010 N = 1.31 RS = 0.005508 BV = 44.74 + CJO = 4.936E-010 VJ = 0.9 M = 0.632 XTI = 0 TT = 5.95E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/02/25 *---------- DMN4036LK3 Spice Model ---------- .SUBCKT DMN4036LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01116 RS 30 3 0.001 RG 20 2 2.15 CGS 2 3 7.986E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.266 + TOX = 6E-008 NSUB = 1E+016 KP = 50.57 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.492E-010 VJ = 0.7991 M = 0.6 .MODEL DSUB D IS = 2.236E-010 N = 1.265 RS = 0.006441 BV = 45 CJO = 2.221E-010 VJ = 0.6 M = 0.6035 TT = 4.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4036LK3 Spice Model v1.0M Last Revised 2018/2/21 *---------- DMN4040SK3 Spice Model ---------- .SUBCKT DMN4040SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.009995 RG 20 2 1.56 CGS 2 3 8.311E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 3.195 + TOX = 6E-008 NSUB = 1E+016 KP = 26.57 U0 = 400 KAPPA = 32.33 .MODEL DCGD D CJO = 3.144E-010 VJ = 0.09587 M = 0.3239 .MODEL DSUB D IS = 1.133E-011 N = 1.136 RS = 1.044E-015 BV = 40 CJO = 1.281E-010 VJ = 0.3722 M = 0.5383 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4040SK3 Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN4060SVT Spice Model ---------- .SUBCKT DMN4060SVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4060SVT Spice Model v1.0 Last Revised 2018/2/21 *---------- DMN4060SVTQ Spice Model ---------- .SUBCKT DMN4060SVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.037 RS 30 3 0.0001 RG 20 2 1.44 CGS 2 3 1.11E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.69E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.48 + TOX = 1E-007 NSUB = 1E+016 KP = 57 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.33E-010 VJ = 0.595 M = 0.544 .MODEL DSUB D IS = 2.65E-009 N = 1.438 RS = 0.005498 BV = 68.93 + CJO = 1.81E-010 VJ = 0.9 M = 0.7426 XTI = 0 TT = 1.05E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/10 *SRC=DMN4468LSS;DI_DMN4468LSS;MOSFETs N;Enh;30.0V 8.70A 14.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN4468LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 5.65m RS 40 3 1.35m RG 20 2 20.0 CGS 2 3 852p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 108p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=1.61m VTO=1.95 KP=10.7 .MODEL DCGD D (CJO=108p VJ=0.600 M=0.680 .MODEL DSUB D (IS=36.1n N=1.50 RS=21.8m BV=30.0 + CJO=208p VJ=0.800 M=0.420 TT=253n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN4800LSS;DI_DMN4800LSS;MOSFETs N;Enh;30.0V 10.0A 14.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN4800LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 5.65m RS 40 3 1.35m RG 20 2 15.0 CGS 2 3 775p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 162p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=1.40m VTO=1.60 KP=13.8 .MODEL DCGD D (CJO=162p VJ=0.600 M=0.680 .MODEL DSUB D (IS=41.5n N=1.50 RS=19.0m BV=30.0 + CJO=313p VJ=0.800 M=0.420 TT=253n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN4800LSSL Spice Model ---------- .SUBCKT DMN4800LSSL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00609 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 6.734E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.515 + TOX = 6.045E-008 NSUB = 3.203E+015 KP = 26.14 KAPPA = 26.53 U0 = 400 .MODEL DCGD D CJO = 5.334E-010 VJ = 0.3477 M = 0.4238 .MODEL DSUB D IS = 2.647E-009 N = 1.306 RS = 0.01224 BV = 35 CJO = 5.333E-011 VJ = 0.6305 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4800LSSL Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN4800LSSQ Spice Model ---------- .SUBCKT DMN4800LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00609 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 6.734E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.515 + TOX = 6.045E-008 NSUB = 3.203E+015 KP = 26.14 KAPPA = 26.53 U0 = 400 .MODEL DCGD D CJO = 5.334E-010 VJ = 0.3477 M = 0.4238 .MODEL DSUB D IS = 2.647E-009 N = 1.306 RS = 0.01224 BV = 35 CJO = 5.333E-011 VJ = 0.6305 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4800LSSQ Spice Model v1.0M Last Revised 2016/3/2 *SRC=DMN5010VAK;DI_DMN5010VAK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc. N Channel MOSFET .MODEL DI_DMN5010VAK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *---------- DMN5040LSS Spice Model ---------- .SUBCKT DMN5040LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02339 RS 30 3 0.001 RG 20 2 2.15 CGS 2 3 8.828E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.232 + TOX = 6E-008 NSUB = 1E+016 KP = 27.35 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.256E-010 N = 1.231 RS = 0.005365 BV = 63 CJO = 1.8E-010 VJ = 0.6013 M = 0.6 TT = 4.68E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN5040LSS Spice Model v1.0M Last Revised 2018/3/22 *---------- DMN52D0LT Spice Model ---------- .SUBCKT DMN52D0LT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.87 RS 30 3 1E-006 RG 20 2 51.79 CGS 2 3 3.529E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.8232 + TOX = 1E-007 NSUB = 1E+015 KP = 1.5 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.2E-011 VJ = 0.5 M = 0.5101 .MODEL DSUB D IS = 4.65E-010 N = 1.444 RS = 0.1336 BV = 67.5 + CJO = 3.3E-012 VJ = 0.6 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/11/9 *The model can only be used at 25 degC *---------- DMN52D0U Spice Model ---------- .SUBCKT DMN52D0U 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN52D0UDM Spice Model ---------- .SUBCKT DMN52D0UDM 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.93 RS 30 3 1E-006 RG 20 2 47.83 CGS 2 3 3.492E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9 + TOX = 1E-007 NSUB = 1E+015 KP = 1.7 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.217E-011 VJ = 0.5 M = 0.5519 .MODEL DSUB D IS = 3E-009 N = 1.566 RS = 0.1658 BV = 70.34 + CJO = 2.1E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/05/29 *The model can only be used at 25 degC *---------- DMN52D0UDMQ Spice Model ---------- .SUBCKT DMN52D0UDMQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.93 RS 30 3 1E-006 RG 20 2 47.83 CGS 2 3 3.492E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9 + TOX = 1E-007 NSUB = 1E+015 KP = 1.7 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.217E-011 VJ = 0.5 M = 0.5519 .MODEL DSUB D IS = 3E-009 N = 1.566 RS = 0.1658 BV = 70.34 + CJO = 2.1E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/05/29 *The model can only be used at 25 degC *---------- DMN52D0UDW Spice Model ---------- .SUBCKT DMN52D0UDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN52D0UDWQ Spice Model ---------- .SUBCKT DMN52D0UDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN52D0UQ Spice Model ---------- .SUBCKT DMN52D0UQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN52D0UV Spice Model ---------- .SUBCKT DMN52D0UV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.93 RS 30 3 1E-006 RG 20 2 47.83 CGS 2 3 3.492E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9 + TOX = 1E-007 NSUB = 1E+015 KP = 1.7 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.217E-011 VJ = 0.5 M = 0.5519 .MODEL DSUB D IS = 3E-009 N = 1.566 RS = 0.1658 BV = 70.34 + CJO = 2.1E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/11/09 *The model can only be used at 25 degC *---------- DMN52D0UVA Spice Model ---------- .SUBCKT DMN52D0UVA 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.93 RS 30 3 1E-006 RG 20 2 47.83 CGS 2 3 3.492E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9 + TOX = 1E-007 NSUB = 1E+015 KP = 1.7 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.217E-011 VJ = 0.5 M = 0.5519 .MODEL DSUB D IS = 3E-009 N = 1.566 RS = 0.1658 BV = 70.34 + CJO = 2.1E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/11/09 *The model can only be used at 25 degC *---------- DMN52D0UVQ Spice Model ---------- .SUBCKT DMN52D0UVQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.93 RS 30 3 1E-006 RG 20 2 47.83 CGS 2 3 3.492E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9 + TOX = 1E-007 NSUB = 1E+015 KP = 1.7 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.217E-011 VJ = 0.5 M = 0.5519 .MODEL DSUB D IS = 3E-009 N = 1.566 RS = 0.1658 BV = 70.34 + CJO = 2.1E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/11/09 *The model can only be used at 25 degC *---------- DMN52D0UVT Spice Model ---------- .SUBCKT DMN52D0UVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.93 RS 30 3 1E-006 RG 20 2 47.83 CGS 2 3 3.492E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9 + TOX = 1E-007 NSUB = 1E+015 KP = 1.7 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.217E-011 VJ = 0.5 M = 0.5519 .MODEL DSUB D IS = 3E-009 N = 1.566 RS = 0.1658 BV = 70.34 + CJO = 2.1E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/05/29 *The model can only be used at 25 degC *---------- DMN52D0UVTQ Spice Model ---------- .SUBCKT DMN52D0UVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.93 RS 30 3 1E-006 RG 20 2 47.83 CGS 2 3 3.492E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9 + TOX = 1E-007 NSUB = 1E+015 KP = 1.7 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.217E-011 VJ = 0.5 M = 0.5519 .MODEL DSUB D IS = 3E-009 N = 1.566 RS = 0.1658 BV = 70.34 + CJO = 2.1E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/05/29 *The model can only be used at 25 degC *---------- DMN52D0UW Spice Model ---------- .SUBCKT DMN52D0UW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN52D0UWQ Spice Model ---------- .SUBCKT DMN52D0UWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN53D0L Spice Model ---------- .SUBCKT DMN53D0L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6021 RS 30 3 0.001 RG 20 2 29.9 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 + TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN53D0L Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN53D0LDW Spice Model ---------- .SUBCKT DMN53D0LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6021 RS 30 3 0.001 RG 20 2 29.9 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 + TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN53D0LDW Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN53D0LDWQ Spice Model ---------- .SUBCKT DMN53D0LDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 0.001 RG 20 2 53.09 CGS 2 3 4.616E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.266 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.195E-011 VJ = 0.5 M = 0.4602 .MODEL DSUB D IS = 1E-008 N = 1.722 RS = 0.1296 BV = 74.34 + CJO = 2.62E-012 VJ = 0.6 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2020/01/03 *---------- DMN53D0LQ Spice Model ---------- .SUBCKT DMN53D0LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6021 RS 30 3 0.001 RG 20 2 29.9 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 + TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN53D0LQ Spice Model v1.0 Last Revised 2015/01/05 *---------- DMN53D0LT Spice Model ---------- .SUBCKT DMN53D0LT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6021 RS 30 3 0.001 RG 20 2 29.9 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 + TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN53D0LT Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN53D0LTQ Spice Model ---------- .SUBCKT DMN53D0LTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.94 RS 30 3 1E-006 RG 20 2 50.88 CGS 2 3 3.897E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.27 + TOX = 1E-007 NSUB = 1E+015 KP = 1.65 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.55E-011 VJ = 0.5 M = 0.5343 .MODEL DSUB D IS = 2.2E-010 N = 1.322 RS = 0.1894 BV = 74.89 + CJO = 1E-013 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/09/13 *---------- DMN53D0LV Spice Model ---------- .SUBCKT DMN53D0LV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6021 RS 30 3 0.001 RG 20 2 29.9 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 + TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN53D0LV Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN53D0LW Spice Model ---------- .SUBCKT DMN53D0LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6021 RS 30 3 0.001 RG 20 2 29.9 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 + TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN53D0LW Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN53D0U Spice Model ---------- .SUBCKT DMN53D0U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6021 RS 30 3 0.001 RG 20 2 29.9 CGS 2 3 5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 + TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN53D0U Spice Model v1.0 Last Revised 2018/2/1 *SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=DMN5L06DMK;DI_DMN5L06DMK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc. N Channel MOSFET .MODEL DI_DMN5L06DMK NMOS( LEVEL=1 VTO=1.20 KP=0.200 GAMMA=1.49 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *SRC=DMN5L06DMK;DI_DMN5L06DMK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc. N Channel MOSFET .MODEL DI_DMN5L06DMK NMOS( LEVEL=1 VTO=1.20 KP=0.200 GAMMA=1.49 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *---------- DMN5L06DWK Spice Model ---------- .SUBCKT DMN5L06DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06DWK Spice Model v1.0 Last Revised 2013/2/18 *---------- DMN5L06K Spice Model ---------- .SUBCKT DMN5L06K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06K Spice Model v1.0 Last Revised 2013/2/18 *---------- DMN5L06KQ Spice Model ---------- .SUBCKT DMN5L06KQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06KQ Spice Model v1.0 Last Revised 2019/5/14 *---------- DMN5L06TK Spice Model ---------- .SUBCKT DMN5L06TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06TK Spice Model v1.0 Last Revised 2013/2/18 *SRC=DMN5L06VK;DI_DMN5L06VK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc MOSFET .MODEL DI_DMN5L06VK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *---------- DMN5L06VK Spice Model ---------- .SUBCKT DMN5L06VK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.329 RS 30 3 0.001 RG 20 2 286.8 CGS 2 3 5.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8012 + TOX = 6E-008 NSUB = 1E+016 KP = 1.115 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.318E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.493E-006 N = 2.385 RS = 0.2266 BV = 50 CJO = 3E-011 VJ = 0.6 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN5L06VK Spice Model v1.0M Last Revised 2016/1/27 *---------- DMN5L06VKQ Spice Model ---------- .SUBCKT DMN5L06VKQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 286.8 CGS 2 3 2.396E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.27E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9525 + TOX = 1E-007 NSUB = 1E+015 KP = 1.28 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.707E-011 VJ = 0.5 M = 0.5803 .MODEL DSUB D IS = 1E-008 N = 1.766 RS = 0.1082 BV = 62.47 + CJO = 6.185E-012 VJ = 0.6 M = 0.4905 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2020/01/03 *---------- DMN5L06WK Spice Model ---------- .SUBCKT DMN5L06WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06WK Spice Model v1.0 Last Revised 2013/2/18 *---------- DMN5L06WKQ Spice Model ---------- .SUBCKT DMN5L06WKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06WKQ Spice Model v1.0 Last Revised 2021/3/12 *---------- DMN6010SCTB Spice Model ---------- .SUBCKT DMN6010SCTB 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00355 RS 30 3 0.0001 RG 20 2 3.64 CGS 2 3 2.58E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.719 + TOX = 1E-007 NSUB = 1E+015 KP = 47.93 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.136E-009 VJ = 0.8 M = 0.7678 .MODEL DSUB D IS = 2.3E-009 N = 1.318 RS = 0.0002981 BV = 67.82 + CJO = 4.3E-009 VJ = 0.9 M = 0.4824 XTI = 0 TT = 2.58E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/24 *---------- DMN6010SCTBQ Spice Model ---------- .SUBCKT DMN6010SCTBQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00355 RS 30 3 0.0001 RG 20 2 3.64 CGS 2 3 2.58E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.719 + TOX = 1E-007 NSUB = 1E+015 KP = 47.93 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.136E-009 VJ = 0.8 M = 0.7678 .MODEL DSUB D IS = 2.3E-009 N = 1.318 RS = 0.0002981 BV = 67.82 + CJO = 4.3E-009 VJ = 0.9 M = 0.4824 XTI = 0 TT = 2.58E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/24 *---------- DMN6013LFG Spice Model ---------- .SUBCKT DMN6013LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005556 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 2.658E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.766 + TOX = 6E-008 NSUB = 1E+016 KP = 67.2 U0 = 400 KAPPA = 38.59 .MODEL DCGD D CJO = 1.231E-009 VJ = 0.6368 M = 0.5502 .MODEL DSUB D IS = 5E-011 N = 1.108 RS = 0.002574 + BV = 70 CJO = 5.209E-010 VJ = 0.9791 M = 0.89 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6013LFG Spice Model v1.0 Last Revised 2014/9/15 *---------- DMN6013LFGQ Spice Model ---------- .SUBCKT DMN6013LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005556 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 2.658E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.766 + TOX = 6E-008 NSUB = 1E+016 KP = 67.2 U0 = 400 KAPPA = 38.59 .MODEL DCGD D CJO = 1.231E-009 VJ = 0.6368 M = 0.5502 .MODEL DSUB D IS = 5E-011 N = 1.108 RS = 0.002574 + BV = 70 CJO = 5.209E-010 VJ = 0.9791 M = 0.89 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6013LFGQ Spice Model v1.0M Last Revised 2016/5/3 *---------- DMN6017SFV Spice Model ---------- .SUBCKT DMN6017SFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01126 RS 30 3 0.001 RG 20 2 1.44 CGS 2 3 2.679E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.27E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.1 + TOX = 6E-008 NSUB = 1E+016 KP = 186.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.661E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 7.669E-009 N = 1.383 RS = 0.001614 BV = 67.25 + CJO = 5.496E-010 VJ = 0.6 M = 0.8 TT = 8.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6017SFV Spice Model v1.0J Last Revised 2018/08/01 *---------- DMN6017SK3 Spice Model ---------- .SUBCKT DMN6017SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01068 RS 30 3 0.001 RG 20 2 1.44 CGS 2 3 2.598E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 1.936 + TOX = 6E-008 NSUB = 1E+016 KP = 180.7 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 8.856E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 4.323E-010 N = 1.209 RS = 0.002739 BV = 65 CJO = 1.445E-010 VJ = 0.6 M = 0.6 TT=8.3E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6017SK3 Spice Model v1.0 Last Revised 2017/6/21 *---------- DMN601DMK Spice Model ---------- .SUBCKT DMN601DMK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601DMK Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601DWK Spice Model ---------- .SUBCKT DMN601DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601DWK Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601DWKQ Spice Model ---------- .SUBCKT DMN601DWKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601DWKQ Spice Model v1.0 Last Revised 2017/12/15 *---------- DMN601K Spice Model ---------- .SUBCKT DMN601K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601K Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601LT Spice Model ---------- .SUBCKT DMN601LT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9113 RS 30 3 0.0001 RG 20 2 140.6 CGS 2 3 4.355E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.54E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.66 + TOX = 1E-007 NSUB = 1E+015 KP = 1 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.11E-011 VJ = 0.5 M = 0.365 .MODEL DSUB D IS = 2.72E-010 N = 1.482 RS = 0.09153 BV = 77.51 + CJO = 5.4E-012 VJ = 0.6 M = 0.4566 XTI = 0 TT = 9.315E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/07/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN601LTQ Spice Model ---------- .SUBCKT DMN601LTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9113 RS 30 3 0.0001 RG 20 2 140.6 CGS 2 3 4.355E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.54E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.66 + TOX = 1E-007 NSUB = 1E+015 KP = 1 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.11E-011 VJ = 0.5 M = 0.365 .MODEL DSUB D IS = 2.72E-010 N = 1.482 RS = 0.09153 BV = 77.51 + CJO = 5.4E-012 VJ = 0.6 M = 0.4566 XTI = 0 TT = 9.315E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/07/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN601TK Spice Model ---------- .SUBCKT DMN601TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601TK Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601TKQ Spice Model ---------- .SUBCKT DMN601TKQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.2 RS 30 3 0.0001 RG 20 2 224.52 CGS 2 3 3.821E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.783 + TOX = 1E-007 NSUB = 1E+015 KP = 1.4 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.528E-011 VJ = 0.5 M = 0.4303 .MODEL DSUB D IS = 4.6E-009 N = 1.746 RS = 0.08691 BV = 81.4 + CJO = 8.143E-012 VJ = 0.6 M = 0.3542 XTI = 0 TT = 4.4E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2023/08/11 *---------- DMN601VK Spice Model ---------- .SUBCKT DMN601VK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601VK Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601VKQ Spice Model ---------- .SUBCKT DMN601VKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601VKQ Spice Model v1.0 Last Revised 2016/1/13 *---------- DMN601WK Spice Model ---------- .SUBCKT DMN601WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601WK Spice Model v1.0 Last Revised 2012/4/25 *---------- DMN601WKQ Spice Model ---------- .SUBCKT DMN601WKQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 2.8E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.027 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6294 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.368E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.273E-010 N = 1.499 RS = 0.1514 BV = 60 CJO = 2E-011 VJ = 0.6 M = 0.7751 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601WKQ Spice Model v1.0 Last Revised 2016/01/07 *---------- DMN6022SSD Spice Model ---------- .SUBCKT DMN6022SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01507 RS 30 3 0.001 RG 20 2 1.95 CGS 2 3 1.906E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.91 + TOX = 6E-008 NSUB = 1E+016 KP = 27.65 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.087E-010 VJ = 0.6996 M = 0.6 .MODEL DSUB D IS = 2.295E-010 N = 1.289 RS = 0.003381 BV = 67 CJO = 3.016E-010 VJ = 0.6 M = 0.6 TT=9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6022SSD Spice Model v1.0M Last Revised 2018/3/26 *---------- DMN6022SSS Spice Model ---------- .SUBCKT DMN6022SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01507 RS 30 3 0.001 RG 20 2 1.95 CGS 2 3 1.906E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.91 + TOX = 6E-008 NSUB = 1E+016 KP = 27.65 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.087E-010 VJ = 0.6996 M = 0.6 .MODEL DSUB D IS = 2.295E-010 N = 1.289 RS = 0.003381 BV = 67 CJO = 3.016E-010 VJ = 0.6 M = 0.6 TT=9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6022SSS Spice Model v1.0M Last Revised 2019/3/22 *---------- DMN6040SE Spice Model ---------- .SUBCKT DMN6040SE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SE Spice Model v1.0 Last Revised 2017/11/27 *---------- DMN6040SFDE Spice Model ---------- .SUBCKT DMN6040SFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SFDE Spice Model v1.0 Last Revised 2012/11/30 *---------- DMN6040SFDEQ Spice Model ---------- .SUBCKT DMN6040SFDEQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SFDEQ Spice Model v1.0 Last Revised 2012/11/30 *---------- DMN6040SK3 Spice Model ---------- .SUBCKT DMN6040SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SK3 Spice Model v1.0 Last Revised 2013/04/17 *---------- DMN6040SSD Spice Model ---------- .SUBCKT DMN6040SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SSD Spice Model v1.0 Last Revised 2012/11/30 *---------- DMN6040SSDQ Spice Model ---------- .SUBCKT DMN6040SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SSDQ Spice Model v1.0 Last Revised 2015/12/23 *---------- DMN6040SSS Spice Model ---------- .SUBCKT DMN6040SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SSS Spice Model v1.0 Last Revised 2012/11/30 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMN6040SSSQ Spice Model ---------- .SUBCKT DMN6040SSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SSSQ Spice Model v1.0 Last Revised 2023/2/17 *---------- DMN6040SVT Spice Model ---------- .SUBCKT DMN6040SVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.037 RS 30 3 0.0001 RG 20 2 1.44 CGS 2 3 1.11E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.69E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.48 + TOX = 1E-007 NSUB = 1E+016 KP = 57 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.33E-010 VJ = 0.595 M = 0.544 .MODEL DSUB D IS = 2.65E-009 N = 1.438 RS = 0.005498 BV = 68.93 + CJO = 1.81E-010 VJ = 0.9 M = 0.7426 XTI = 0 TT = 1.05E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/10 *---------- DMN6040SVTQ Spice Model ---------- .SUBCKT DMN6040SVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.037 RS 30 3 0.0001 RG 20 2 1.44 CGS 2 3 1.11E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.69E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.48 + TOX = 1E-007 NSUB = 1E+016 KP = 57 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.33E-010 VJ = 0.595 M = 0.544 .MODEL DSUB D IS = 2.65E-009 N = 1.438 RS = 0.005498 BV = 68.93 + CJO = 1.81E-010 VJ = 0.9 M = 0.7426 XTI = 0 TT = 1.05E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/10 *---------- DMN6041SVT Spice Model ---------- .SUBCKT DMN6041SVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.04013 RS 30 3 0.0001 RG 20 2 2.11 CGS 2 3 1.157E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.22E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.309 + TOX = 1E-07 NSUB = 7.586E+15 KP = 44.01 U0 = 312.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.622E-10 VJ = 0.5 M = 0.4848 .MODEL DSUB D IS = 5.843E-10 N = 1.276 RS = 0.006474 BV = 69.6 + CJO = 1.431E-10 VJ = 0.6 M = 0.5431 XTI = 0 TT = 9.625E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/09/25 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN6041SVTQ Spice Model ---------- .SUBCKT DMN6041SVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.04013 RS 30 3 0.0001 RG 20 2 2.11 CGS 2 3 1.157E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.22E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.309 + TOX = 1E-07 NSUB = 7.586E+15 KP = 44.01 U0 = 312.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.622E-10 VJ = 0.5 M = 0.4848 .MODEL DSUB D IS = 5.843E-10 N = 1.276 RS = 0.006474 BV = 69.6 + CJO = 1.431E-10 VJ = 0.6 M = 0.5431 XTI = 0 TT = 9.625E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/09/25 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *DIODES_INC_SPICE_MODEL DMN6066SSD N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2011 *VERSION=1 .SUBCKT DMN6066 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 420E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 420E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=6E-8 NSUB=3E+17 KP=140 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 220E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS .SIMULATOR DEFAULT * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DIODES_INC_SPICE_MODEL DMN6066SSDQ N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2011 *VERSION=1 .SUBCKT DMN6066 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 420E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 420E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=6E-8 NSUB=3E+17 KP=140 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 220E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL DMN6066SSD N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2011 *VERSION=1 .SUBCKT DMN6066 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 420E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 420E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=6E-8 NSUB=3E+17 KP=140 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 220E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL DMN6068LK3 N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=21Dec2011 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN6068 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 380E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 426E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 2n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS *DIODES_INC_SPICE_MODEL DMN6068LK3Q N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=21Dec2011 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN6068 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 380E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 426E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 2n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS *DIODES_INC_SPICE_MODEL DMN6068SE N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=21Dec2011 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN6068 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 380E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 426E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 2n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS *---------- DMN6069SE Spice Model ---------- .SUBCKT DMN6069SE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6069SE Spice Model v1.0 Last Revised 2015/8/03 *---------- DMN6069SE Spice Model ---------- .SUBCKT DMN6069SE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6069SE Spice Model v1.0 Last Revised 2018/2/02 *---------- DMN6069SEQ Spice Model ---------- .SUBCKT DMN6069SEQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6069SEQ Spice Model v1.0 Last Revised 2023/2/10 *---------- DMN6069SFG Spice Model ---------- .SUBCKT DMN6069SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6069SFG Spice Model v1.0 Last Revised 2015/8/03 *---------- DMN6069SFGQ Spice Model ---------- .SUBCKT DMN6069SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6069SFGQ Spice Model v1.0 Last Revised 2017/1/26 *---------- DMN6069SFVW Spice Model ---------- .SUBCKT DMN6069SFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6069SFVW Spice Model v1.0 Last Revised 2021/2/26 *---------- DMN6069SFVWQ Spice Model ---------- .SUBCKT DMN6069SFVWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6069SFVWQ Spice Model v1.0 Last Revised 2021/2/26 *---------- DMN6070LCA6 Spice Model ---------- .SUBCKT DMN6070LCA6 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003828 RS 30 3 0.0001 RG 20 2 11.47 CGS 2 3 1.598E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.353E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.88 + TOX = 1E-007 NSUB = 1E+014 KP = 71.46 U0 = 645.8 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.433E-010 VJ = 0.1 M = 0.5471 .MODEL DSUB D IS = 3.7E-010 N = 1.144 RS = 0.02134 BV = 61.73 + CJO = 9.302E-011 VJ = 0.2 M = 0.3807 XTI = 0 TT = 5.754E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN6070SFCL Spice Model ---------- .SUBCKT DMN6070SFCL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04411 RS 30 3 0.001 RG 20 2 1.31 CGS 2 3 7.136E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 + TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6070SFCL Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN6070SSD Spice Model ---------- .SUBCKT DMN6070SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04411 RS 30 3 0.001 RG 20 2 1.31 CGS 2 3 7.136E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 + TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6070SSD Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN6070SSDQ Spice Model ---------- .SUBCKT DMN6070SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04411 RS 30 3 0.001 RG 20 2 1.31 CGS 2 3 7.136E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 + TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6070SSDQ Spice Model v1.0M Last Revised 2020/7/21 *---------- DMN6070SY Spice Model ---------- .SUBCKT DMN6070SY_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04411 RS 30 3 0.001 RG 20 2 1.31 CGS 2 3 7.136E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 + TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6070SY Spice Model v1.0M Last Revised 2016/4/8 *---------- DMN6075S Spice Model ---------- .SUBCKT DMN6075S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04411 RS 30 3 0.001 RG 20 2 1.31 CGS 2 3 7.136E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 + TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6075S Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN6075SQ Spice Model ---------- .SUBCKT DMN6075SQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04411 RS 30 3 0.001 RG 20 2 1.31 CGS 2 3 7.136E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 + TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6075SQ Spice Model v1.0M Last Revised 2019/8/19 *---------- DMN60H080DS Spice Model ---------- .SUBCKT DMN60H080DS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 69.4 RS 30 3 0.001 RG 20 2 21.25 CGS 2 3 2.45E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.38E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.494 + TOX = 6E-008 NSUB = 1E+016 KP = 0.1069 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.248E-010 N = 1.562 RS = 0.05025 BV = 672 CJO = 4E-011 VJ = 0.6755 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN60H080DS Spice Model v1.0 Last Revised 2017/4/20 *---------- DMN60H3D5SK3 Spice Model ---------- .SUBCKT DMN60H3D5SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.225 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 3.373E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 3.4 TOX = 6E-008 NSUB = 1E+016 KP = 1.179 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.727E-010 VJ = 0.6564 M = 0.8 .MODEL DSUB D IS = 2.232E-010 N = 1.328 RS = 0.02148 BV = 650 CJO = 5.32E-010 VJ = 0.6625 M = 0.7963 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN60H3D5SK3 Spice Model v1.0 Last Revised 2016/12/9 *---------- DMN60H4D5SK3 Spice Model ---------- .SUBCKT DMN60H4D5SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 3.191 RS 30 3 0.001 RG 20 2 3.45 CGS 2 3 2.604E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.302 + TOX = 6E-008 NSUB = 1E+016 KP = 1.248 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.826E-010 VJ = 0.7299 M = 0.8 .MODEL DSUB D IS = 2.466E-010 N = 1.339 RS = 0.02508 BV = 654 CJO = 3.749E-010 VJ = 0.7748 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN60H4D5SK3 Spice Model v1.0 Last Revised 2017/3/1 *---------- DMN6140L Spice Model ---------- .SUBCKT DMN6140L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.06658 RS 30 3 0.001 RG 20 2 0.65 CGS 2 3 3.184E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 1.88 TOX = 6E-008 NSUB = 1E+016 KP = 5.783 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.846E-010 VJ = 0.6 M = 0.6135 .MODEL DSUB D IS = 2.247E-010 N = 1.308 RS = 0.02648 BV = 65 CJO = 6.828E-012 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6140L Spice Model v1.0 Last Revised 2014/11/14 *---------- DMN6140LQ Spice Model ---------- .SUBCKT DMN6140LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.06658 RS 30 3 0.001 RG 20 2 0.65 CGS 2 3 3.184E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 1.88 TOX = 6E-008 NSUB = 1E+016 KP = 5.783 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.846E-010 VJ = 0.6 M = 0.6135 .MODEL DSUB D IS = 2.247E-010 N = 1.308 RS = 0.02648 BV = 65 CJO = 6.828E-012 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6140LQ Spice Model v1.0 Last Revised 2018/2/1 *DIODES_INC_SPICE_MODEL DMN61D8L N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=24/08/2015 *VERSION=1 **Pin order: Drain=10, Gate=50, Source=30 .SUBCKT DMN61D8L 10 50 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.02 RS 23 3 Rmod1 .08 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 30E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.022 LS 30 23 1n *ESD and Clamp structures Dclamp1 10 55 Dclamp Dclamp2 20 55 Dclamp Desd1 20 60 DESD Desd2 30 60 DESD RgateS 50 20 5.5K RgateP 50 30 100K Desd3 50 40 DESD Desd4 30 40 DESD .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=1E-3 EG=1.09) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6) *ESD and CLAMP DIoDES .model DESD D(IS=.150f RS=1m BV=12 Ibv=10u) .model Dclamp D(IS=.160f RS=1m BV=60 Ibv=10u) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DMN61D8LQ N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=24/08/2015 *VERSION=1 "**Pin order: Drain=10, Gate=50, Source=30" .SUBCKT DMN61D8LQ 10 50 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.02 RS 23 3 Rmod1 .08 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 30E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.022 LS 30 23 1n *ESD and Clamp structures Dclamp1 10 55 Dclamp Dclamp2 20 55 Dclamp Desd1 20 60 DESD Desd2 30 60 DESD RgateS 50 20 5.5K RgateP 50 30 100K Desd3 50 40 DESD Desd4 30 40 DESD .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=1E-3 EG=1.09) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6) *ESD and CLAMP DIoDES .model DESD D(IS=.150f RS=1m BV=12 Ibv=10u) .model Dclamp D(IS=.160f RS=1m BV=60 Ibv=10u) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong "* to Diodes Incorporated ("" Zetex ""). They are supplied" * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability "* in respect of any use is accepted by Diodes Incorporated, its distributors" * or agents. * "* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton," "* Oldham, United Kingdom, OL9 9LL" * *DIODES_INC_SPICE_MODEL DMN61D8L N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=24/08/2015 *VERSION=1 **Pin order: Drain=10, Gate=50, Source=30 .SUBCKT DMN61D8L 10 50 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.02 RS 23 3 Rmod1 .08 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 30E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.022 LS 30 23 1n *ESD and Clamp structures Dclamp1 10 55 Dclamp Dclamp2 20 55 Dclamp *DIODES_INC_SPICE_MODEL DMN61D8LVTQ N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=24/08/2015 *VERSION=1 "**Pin order: Drain=10, Gate=50, Source=30" .SUBCKT DMN61D8LVTQ 10 50 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.02 RS 23 3 Rmod1 .08 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 30E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.022 LS 30 23 1n *ESD and Clamp structures Dclamp1 10 55 Dclamp Dclamp2 20 55 Dclamp Desd1 20 60 DESD Desd2 30 60 DESD RgateS 50 20 5.5K RgateP 50 30 100K Desd3 50 40 DESD Desd4 30 40 DESD .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=1E-3 EG=1.09) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6) *ESD and CLAMP DIoDES .model DESD D(IS=.150f RS=1m BV=12 Ibv=10u) .model Dclamp D(IS=.160f RS=1m BV=60 Ibv=10u) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong "* to Diodes Incorporated ("" Zetex ""). They are supplied" * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability "* in respect of any use is accepted by Diodes Incorporated, its distributors" * or agents. * "* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton," "* Oldham, United Kingdom, OL9 9LL" * *---------- DMN61D9U Spice Model ---------- .SUBCKT DMN61D9U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN61D9U Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN61D9UDW Spice Model ---------- .SUBCKT DMN61D9UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN61D9UDW Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN61D9UDWQ Spice Model ---------- .SUBCKT DMN61D9UDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.2 RS 30 3 0.0001 RG 20 2 238.3 CGS 2 3 3.122E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.95 + TOX = 1E-007 NSUB = 1E+015 KP = 0.95 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.439E-011 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 2.8E-009 N = 1.527 RS = 0.2046 BV = 73.19 + CJO = 1.915E-011 VJ = 0.9 M = 0.3 XTI = 0 TT = 9.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/06/21 *---------- DMN61D9UW Spice Model ---------- .SUBCKT DMN61D9UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN61D9UW Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN61D9UWQ Spice Model ---------- .SUBCKT DMN61D9UWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN61D9UWQ Spice Model v1.0 Last Revised 2017/7/20 *DIODES_INC_SPICE_MODEL DMN62D0LFB N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=07Aug2012 *VERSION=1 .SUBCKT DMN62D0LFB 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.1 RS 23 3 Rmod1 .3 RG 20 22 126 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 40E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.003 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.15 TOX=5E-8 NSUB=3E+15 KP=3.8 NFS=12E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 15E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 5E-13 N=1.1 RS=0.06 BV=66 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.1e-3 TC2=6E-6) .ENDS *---------- DMN62D0LFD Spice Model ---------- .SUBCKT DMN62D0LFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0LFD Spice Model v1.1 Last Revised 2014/12/8 *---------- DMN62D0SFD Spice Model ---------- .SUBCKT DMN62D0SFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0SFD Spice Model v1.1 Last Revised 2018/2/1 *---------- DMN62D0U Spice Model ---------- .SUBCKT DMN62D0U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0U Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN62D0UDW Spice Model ---------- .SUBCKT DMN62D0UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0UDW Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN62D0UDWQ Spice Model ---------- .SUBCKT DMN62D0UDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0UDWQ Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN62D0UT Spice Model ---------- .SUBCKT DMN62D0UT 10 20 30 * TERMINALS: D G S * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2023/11/08 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D0UV Spice Model ---------- .SUBCKT DMN62D0UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0UV Spice Model v1.0 Last Revised 2022/6/13 *---------- DMN62D0UW Spice Model ---------- .SUBCKT DMN62D0UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0UW Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN62D1LFB Spice Model ---------- .SUBCKT DMN62D1LFB 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.73 RS 30 3 0.0001 RG 20 2 63.96 CGS 2 3 3.507E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9573 + TOX = 1E-007 NSUB = 1E+015 KP = 1.192 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.777E-011 VJ = 0.5 M = 0.5183 .MODEL DSUB D IS = 7.1E-009 N = 1.554 RS = 0.2056 BV = 73.19 + CJO = 1.201E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/02/17 *---------- DMN62D1LFD Spice Model ---------- .SUBCKT DMN62D1LFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.8574 RS 30 3 0.001 RG 20 2 81.24 CGS 2 3 3.774E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.43E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.584 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9918 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 2.818E-011 VJ = 0.4 M = 0.5368 .MODEL DSUB D IS = 6.562E-012 N = 1.326 RS = 0.08305 BV = 65 CJO = 5.117E-012 VJ = 0.4 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D1LFD Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN62D1LFDQ Spice Model ---------- .SUBCKT DMN62D1LFDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.8574 RS 30 3 0.001 RG 20 2 81.24 CGS 2 3 3.774E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.43E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.584 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9918 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 2.818E-011 VJ = 0.4 M = 0.5368 .MODEL DSUB D IS = 6.562E-012 N = 1.326 RS = 0.08305 BV = 65 + CJO = 5.117E-012 VJ = 0.4 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D1LFDQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN62D1SFB Spice Model ---------- .SUBCKT DMN62D1SFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.8574 RS 30 3 0.001 RG 20 2 81.24 CGS 2 3 3.774E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.43E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.584 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9918 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 2.818E-011 VJ = 0.4 M = 0.5368 .MODEL DSUB D IS = 6.562E-012 N = 1.326 RS = 0.08305 BV = 65 CJO = 5.117E-012 VJ = 0.4 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D1SFB Spice Model v1.0 Last Revised 2015/2/26 *---------- DMN62D1SFBW Spice Model ---------- .SUBCKT DMN62D1SFBW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6958 RS 30 3 1E-006 RG 20 2 232.1 CGS 2 3 4.016E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.135E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.852 + TOX = 1E-007 NSUB = 6.959E+015 KP = 1.034 U0 = 246 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.503E-011 VJ = 0.5479 M = 0.35 .MODEL DSUB D IS = 3E-010 N = 1.497 RS = 0.06143 BV = 70.53 + CJO = 1.051E-011 VJ = 0.6 M = 0.4174 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/07 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D1SFBWQ Spice Model ---------- .SUBCKT DMN62D1SFBWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.6958 RS 30 3 1E-006 RG 20 2 232.1 CGS 2 3 4.016E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.135E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.852 + TOX = 1E-007 NSUB = 6.959E+015 KP = 1.034 U0 = 246 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.503E-011 VJ = 0.5479 M = 0.35 .MODEL DSUB D IS = 3E-010 N = 1.497 RS = 0.06143 BV = 70.53 + CJO = 1.051E-011 VJ = 0.6 M = 0.4174 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/07 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2U Spice Model ---------- .SUBCKT DMN62D2U 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UDM Spice Model ---------- .SUBCKT DMN62D2UDM 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UDMQ Spice Model ---------- .SUBCKT DMN62D2UDMQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UDW Spice Model ---------- .SUBCKT DMN62D2UDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/12 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UDWQ Spice Model ---------- .SUBCKT DMN62D2UDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/12 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UQ Spice Model ---------- .SUBCKT DMN62D2UQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UT Spice Model ---------- .SUBCKT DMN62D2UT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UTQ Spice Model ---------- .SUBCKT DMN62D2UTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UV Spice Model ---------- .SUBCKT DMN62D2UV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UVQ Spice Model ---------- .SUBCKT DMN62D2UVQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UVT Spice Model ---------- .SUBCKT DMN62D2UVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UVT Spice Model ---------- .SUBCKT DMN62D2UVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UW Spice Model ---------- .SUBCKT DMN62D2UW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/12 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D2UWQ Spice Model ---------- .SUBCKT DMN62D2UWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.97 RS 30 3 1E-006 RG 20 2 52.78 CGS 2 3 3.6E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.9225 + TOX = 1E-007 NSUB = 1E+015 KP = 1.9 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.8E-011 VJ = 0.5 M = 0.5426 .MODEL DSUB D IS = 1.55E-009 N = 1.493 RS = 0.1647 BV = 71.91 + CJO = 1E-013 VJ = 0.6 M = 0.5045 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/12 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN62D4LDW Spice Model ---------- .SUBCKT DMN62D4LDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.2 RS 30 3 0.0001 RG 20 2 224.52 CGS 2 3 3.821E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.783 + TOX = 1E-007 NSUB = 1E+015 KP = 1.4 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.528E-011 VJ = 0.5 M = 0.4303 .MODEL DSUB D IS = 4.6E-009 N = 1.746 RS = 0.08691 BV = 81.4 + CJO = 8.143E-012 VJ = 0.6 M = 0.3542 XTI = 0 TT = 4.4E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/11/19 *---------- DMN62D4LFB Spice Model ---------- .SUBCKT DMN62D4LFB 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.1 RS 30 3 0.0001 RG 20 2 239 CGS 2 3 3.897E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.3E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.776 + TOX = 1E-007 NSUB = 1E+015 KP = 1 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.281E-011 VJ = 0.5348 M = 0.3866 .MODEL DSUB D IS = 9.2E-010 N = 1.614 RS = 0.1201 BV = 82.4 + CJO = 1E-011 VJ = 0.7433 M = 0.4311 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/08/12 *---------- DMN62D4LFB4 Spice Model ---------- .SUBCKT DMN62D4LFB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.2 RS 30 3 0.0001 RG 20 2 224.52 CGS 2 3 3.821E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.783 + TOX = 1E-007 NSUB = 1E+015 KP = 1.4 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.528E-011 VJ = 0.5 M = 0.4303 .MODEL DSUB D IS = 4.6E-009 N = 1.746 RS = 0.08691 BV = 81.4 + CJO = 8.143E-012 VJ = 0.6 M = 0.3542 XTI = 0 TT = 4.4E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2024/8/19 *---------- DMN63D1L Spice Model ---------- .SUBCKT DMN63D1L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D1L Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN63D1LDW Spice Model ---------- .SUBCKT DMN63D1LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D1LDW Spice Model v1.0 Last Revised 2015/7/1 *---------- DMN63D1LT Spice Model ---------- .SUBCKT DMN63D1LT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D1LT Spice Model v1.0 Last Revised 2015/8/28 *---------- DMN63D1LV Spice Model ---------- .SUBCKT DMN63D1LV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D1LV Spice Model v1.0 Last Revised 2015/8/28 *---------- DMN63D1LVQ Spice Model ---------- .SUBCKT DMN63D1LVQ_NMOS D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.87 RS 30 3 0.0001 RG 20 2 146.4 CGS 2 3 4.431E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.535E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 21 .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.681 + TOX = 1E-007 NSUB = 9.974E+015 KP = 1.05 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.861E-012 VJ = 0.5 M = 0.3886 .MODEL DSUB D IS = 3.5E-011 N = 1.333 RS = 0.1033 BV = 76.93 + CJO = 1.93E-011 VJ = 0.6 M = 0.4466 XTI = 0 TT = 9.215E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/24 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMN63D1LW Spice Model ---------- .SUBCKT DMN63D1LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D1LW Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN63D8L Spice Model ---------- .SUBCKT DMN63D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8L Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN63D8LDW Spice Model ---------- .SUBCKT DMN63D8LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8LDW Spice Model v1.0 Last Revised 2014/10/15 *---------- DMN63D8LDWQ Spice Model ---------- .SUBCKT DMN63D8LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8LDW Spice Model v1.0 Last Revised 2014/10/15 *---------- DMN63D8LV Spice Model ---------- .SUBCKT DMN63D8LV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8LV Spice Model v1.0 Last Revised 2014/10/15 *---------- DMN63D8LW Spice Model ---------- .SUBCKT DMN63D8LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8LW Spice Model v1.0 Last Revised 2015/7/3 *---------- DMN65D7LFR4 Spice Model ---------- .SUBCKT DMN65D7LFR4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.2 RS 30 3 0.0001 RG 20 2 224.52 CGS 2 3 3.821E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.783 + TOX = 1E-007 NSUB = 1E+015 KP = 1.4 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.528E-011 VJ = 0.5 M = 0.4303 .MODEL DSUB D IS = 4.6E-009 N = 1.746 RS = 0.08691 BV = 81.4 + CJO = 8.143E-012 VJ = 0.6 M = 0.3542 XTI = 0 TT = 4.4E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/11/19 *---------- DMN65D8L Spice Model ---------- .SUBCKT DMN65D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8L Spice Model v1.0 Last Revised 2012/7/23 *---------- DMN65D8LDW Spice Model ---------- .SUBCKT DMN65D8LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LDW Spice Model v1.0 Last Revised 2012/7/23 *---------- DMN65D8LDWQ Spice Model ---------- .SUBCKT DMN65D8LDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LDWQ Spice Model v1.0 Last Revised 2017/3/17 *---------- DMN65D8LFB Spice Model ---------- .SUBCKT DMN65D8LFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LFB Spice Model v1.0 Last Revised 2012/7/23 *---------- DMN65D8LQ Spice Model ---------- .SUBCKT DMN65D8LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN65D8LT Spice Model ---------- .SUBCKT DMN65D8LT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LT Spice Model v1.0 Last Revised 2019/9/16 *---------- DMN65D8LW Spice Model ---------- .SUBCKT DMN65D8LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LW Spice Model v1.0 Last Revised 2012/7/23 *---------- DMN65D9L Spice Model ---------- .SUBCKT DMN65D9L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.63 RS 30 3 0.001 RG 20 2 900.9 CGS 2 3 3.933E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.084 + TOX = 6E-008 NSUB = 1E+016 KP = 1.27 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.483E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.945E-010 N = 1.613 RS = 0.07371 BV = 76.92 + CJO = 2.987E-011 VJ = 0.8 M = 0.6 TT = 1.04E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN65D9L Spice Model v1.0M Last Revised 2018/10/22 *SRC=DMN66D0LDW;DI_DMN66D0LDW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms Diodes Inc MOSFET .MODEL DI_DMN66D0LDW NMOS( LEVEL=1 VTO=2.00 KP=55.7m GAMMA=2.48 + PHI=.75 LAMBDA=69.6u RD=0.700 RS=0.700 + IS=57.5f PB=0.800 MJ=0.460 CBD=9.88p + CBS=11.9p CGSO=16.8n CGDO=14.0n CGBO=199n ) * -- Assumes default L=100U W=100U -- *---------- DMN66D0LDWQ Spice Model ---------- .SUBCKT DMN66D0LDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.89 RS 30 3 0.0001 RG 20 2 65.08 CGS 2 3 2.628E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.3E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.9 + TOX = 1E-007 NSUB = 1E+015 KP = 0.6 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.4E-011 VJ = 0.5 M = 0.4293 .MODEL DSUB D IS = 7.55E-010 N = 1.651 RS = 0.1446 BV = 61.62 + CJO = 2.06E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/11/23 *---------- DMN66D0LT Spice Model ---------- .SUBCKT DMN66D0LT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.009081 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN66D0LT Spice Model v1.0 Last Revised 2011/1/13 *SRC=DMN66D0LW;DI_DMN66D0LW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms Diodes Inc MOSFET .MODEL DI_DMN66D0LW NMOS( LEVEL=1 VTO=2.00 KP=55.7m GAMMA=2.48 + PHI=.75 LAMBDA=69.6u RD=0.700 RS=0.700 + IS=57.5f PB=0.800 MJ=0.460 CBD=9.88p + CBS=11.9p CGSO=16.8n CGDO=14.0n CGBO=199n ) * -- Assumes default L=100U W=100U -- *---------- DMN67D7L Spice Model ---------- .SUBCKT DMN67D7L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9475 RS 30 3 0.001 RG 20 2 104.4 CGS 2 3 1.8E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.632 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4338 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.224E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.28E-008 N = 2.068 RS = 0.107 BV = 78 CJO = 1E-011 VJ = 0.6 M = 0.7932 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN67D7L Spice Model v1.0 Last Revised 2017/10/23 *---------- DMN67D8L Spice Model ---------- .SUBCKT DMN67D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN67D8L Spice Model v1.0 Last Revised 2018/2/1 *---------- DMN67D8LDW Spice Model ---------- .SUBCKT DMN67D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN67D8LDW Spice Model v1.0 Last Revised 2015/7/14 *---------- DMN67D8LT Spice Model ---------- .SUBCKT DMN67D8LT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN67D8LT Spice Model v1.0 Last Revised 2022/3/21 *---------- DMN67D8LW Spice Model ---------- .SUBCKT DMN67D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN67D8LW Spice Model v1.0 Last Revised 2015/7/14 *---------- DMN68M7SCT Spice Model ---------- .SUBCKT DMN68M7SCT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00504 RS 30 3 1E-06 RG 20 2 1.75 CGS 2 3 4.039E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-09 R1 13 0 1 D1 12 13 + DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 1.91 + TOX = 1E-07 NSUB = 1E+14 KP = 130 U0 = 300 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.265E-09 VJ = 0.5 M = 0.4524 .MODEL DSUB D IS = 2.438E-10 N = 1.154 RS = 0.001516 + BV = 69.73 CJO = 1.536E-09 VJ = 0.9 M = 0.5295 TT = 1.57E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/09/19 *---------- DMN7022LFG Spice Model ---------- .SUBCKT DMN7022LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01229 RS 30 3 0.001 RG 20 2 0.89 CGS 2 3 2.958E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.283 + TOX = 6E-008 NSUB = 1E+016 KP = 108.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.098E-010 VJ = 0.6685 M = 0.6 .MODEL DSUB D IS = 2.356E-010 N = 1.236 RS = 0.001642 BV = 84 CJO = 4.014E-010 VJ = 0.6 M = 0.6031 TT=1.3E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN7022LFG Spice Model v1.0M Last Revised 2018/2/1 *---------- DMN7022LFGQ Spice Model ---------- .SUBCKT DMN7022LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01229 RS 30 3 0.001 RG 20 2 0.89 CGS 2 3 2.958E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.283 + TOX = 6E-008 NSUB = 1E+016 KP = 108.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.098E-010 VJ = 0.6685 M = 0.6 .MODEL DSUB D IS = 2.356E-010 N = 1.236 RS = 0.001642 BV = 84 CJO = 4.014E-010 VJ = 0.6 M = 0.6031 TT=1.3E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN7022LFGQ Spice Model v1.0M Last Revised 2017/8/4 *---------- DMN80H2D0SCTI Spice Model ---------- .SUBCKT DMN80H2D0SCTI 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.236 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.233E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.45E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.589 + TOX = 6E-008 NSUB = 1E+016 KP = 1.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.207E-009 VJ = 0.6875 M = 0.8 .MODEL DSUB D IS = 2.36E-010 N = 1.257 RS = 0.009393 BV = 877 CJO = 1.307E-009 VJ = 0.8 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN80H2D0SCTI Spice Model v1.0 Last Revised 2017/3/2 *---------- DMN90H2D2HCT Spice Model ---------- .SUBCKT DMN90H2D2HCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.542 RS 30 3 0.001 RG 20 2 4.86 CGS 2 3 1.465E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.498 + TOX = 6E-008 NSUB = 1E+016 KP = 2.06 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.49E-012 VJ = 2.391 M = 0.12 .MODEL DSUB D IS = 2.503E-010 N = 1.303 RS = 0.005901 BV = 1054 CJO = 2.001E-009 VJ = 0.1005 M = 0.5169 TT=3E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN90H2D2HCT Spice Model v1.0M Last Revised 2016/8/3 *---------- DMN90H8D5HCT Spice Model ---------- .SUBCKT DMN90H8D5HCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 4.929 RS 30 3 0.001 RG 20 2 1.16 CGS 2 3 4.818E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.431 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4278 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.517E-011 VJ = 0.1357 M = 0.7414 .MODEL DSUB D IS = 2.318E-010 N = 1.372 RS = 0.01261 BV = 1054 CJO = 7.723E-010 VJ = 0.3635 M = 0.6859 TT = 1.87E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN90H8D5HCT Spice Model v1.0M Last Revised 2016/8/3 *---------- DMN90H8D5HCTI Spice Model ---------- .SUBCKT DMN90H8D5HCTI 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 4.884 RS 30 3 0.001 RG 20 2 1.16 CGS 2 3 4.535E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.536 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4727 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.213E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 3.813E-010 N = 1.399 RS = 0.01264 BV = 1050 CJO = 5.904E-010 VJ = 0.6 M = 0.7456 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN90H8D5HCTI Spice Model v1.0 Last Revised 2017/3/30 *---------- DMN95H2D2HCTI Spice Model ---------- .SUBCKT DMN95H2D2HCTI 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.542 RS 30 3 0.001 RG 20 2 4.86 CGS 2 3 1.465E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.498 + TOX = 6E-008 NSUB = 1E+016 KP = 2.06 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.49E-012 VJ = 2.391 M = 0.12 .MODEL DSUB D IS = 2.503E-010 N = 1.303 RS = 0.005901 BV = 1054 CJO = 2.001E-009 VJ = 0.1005 M = 0.5169 TT=3E-07 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN95H2D2HCTI Spice Model v1.0M Last Revised 2017/3/30 *---------- DMN95H8D5HCT Spice Model ---------- .SUBCKT DMN95H8D5HCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 4.929 RS 30 3 0.001 RG 20 2 1.16 CGS 2 3 4.818E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.431 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4278 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.517E-011 VJ = 0.1357 M = 0.7414 .MODEL DSUB D IS = 2.318E-010 N = 1.372 RS = 0.01261 BV = 1054 CJO = 7.723E-010 VJ = 0.3635 M = 0.6859 TT = 1.87E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN95H8D5HCT Spice Model v1.0M Last Revised 2016/8/3 *---------- DMN95H8D5HCTI Spice Model ---------- .SUBCKT DMN95H8D5HCTI 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 4.884 RS 30 3 0.001 RG 20 2 1.16 CGS 2 3 4.535E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.536 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4727 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.213E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 3.813E-010 N = 1.399 RS = 0.01264 BV = 1050 CJO = 5.904E-010 VJ = 0.6 M = 0.7456 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN95H8D5HCTI Spice Model v1.0 Last Revised 2017/3/30 *---------- DMNH10H020SPSW Spice Model ---------- .SUBCKT DMNH10H020SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01518 RS 30 3 0.0001 RG 20 2 2.04 CGS 2 3 2.593E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.423E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.371 + TOX = 1E-007 NSUB = 1E+014 KP = 74.12 U0 = 530.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.476E-010 VJ = 0.1 M = 0.2916 .MODEL DSUB D IS = 2.305E-008 N = 1.41 RS = 0.001731 BV = 118.8 + CJO = 1.616E-009 VJ = 0.5571 M = 0.4888 XTI = 0 TT = 1.773E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMNH10H021SPSW Spice Model ---------- .SUBCKT DMNH10H021SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01458 RS 30 3 0.0001 RG 20 2 0.95 CGS 2 3 3.7E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.52 + TOX = 1E-007 + NSUB = 1E+015 KP = 117 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8E-010 VJ = 0.5 M = 0.47 .MODEL DSUB D IS = 4.7E-009 N = 1.36 RS = 0.0002108 BV = 109.7 + CJO = 1.286E-009 VJ = 0.6025 M = 0.5112 XTI = 0 TT = 2.305E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H021SPSW Spice Model v1.1 Last Revised 2020/11/12 *---------- DMNH10H028SCT Spice Model ---------- .SUBCKT DMNH10H028SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01799 RS 30 3 0.001 RG 20 2 1.8 CGS 2 3 2.196E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.538 + TOX = 6E-008 NSUB = 1E+016 KP = 51.62 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.277E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.515E-010 N = 1.179 RS = 0.001664 BV = 119 CJO = 1.202E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SCT Spice Model v1.0M Last Revised 2016/4/19 *---------- DMNH10H028SK3 Spice Model ---------- .SUBCKT DMNH10H028SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02115 RS 30 3 1E-008 RG 20 2 1.82 CGS 2 3 2.134E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 + TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SK3 Spice Model v1.0 Last Revised 2018/2/1 *---------- DMNH10H028SK3Q Spice Model ---------- .SUBCKT DMNH10H028SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02115 RS 30 3 1E-008 RG 20 2 1.82 CGS 2 3 2.134E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 + TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SK3Q Spice Model v1.0 Last Revised 2015/9/07 *---------- DMNH10H028SPS Spice Model ---------- .SUBCKT DMNH10H028SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02115 RS 30 3 1E-008 RG 20 2 1.82 CGS 2 3 2.134E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 + TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SPS Spice Model v1.0 Last Revised 2018/2/1 *---------- DMNH10H028SPSQ Spice Model ---------- .SUBCKT DMNH10H028SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02115 RS 30 3 1E-008 RG 20 2 1.82 CGS 2 3 2.134E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 + TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SPSQ Spice Model v1.0 Last Revised 2015/9/07 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH10H028SPSW Spice Model ---------- .SUBCKT DMNH10H028SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02115 RS 30 3 1E-008 RG 20 2 1.82 CGS 2 3 2.134E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 + TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SPSW Spice Model v1.0 Last Revised 2024/9/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH10H028SPSWQ Spice Model ---------- .SUBCKT DMNH10H028SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02115 RS 30 3 1E-008 RG 20 2 1.82 CGS 2 3 2.134E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 + TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH10H028SPSWQ Spice Model v1.0 Last Revised 2023/7/26 *---------- DMNH15H110SK3 Spice Model ---------- .SUBCKT DMNH15H110SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0625 RS 30 3 0.0001 RG 20 2 1.28 CGS 2 3 9.515E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.96E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.4 + TOX = 1E-007 NSUB = 1E+015 KP = 21 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.465E-010 VJ = 0.7229 M = 0.6242 .MODEL DSUB D IS = 3E-009 N = 1.339 RS = 0.002171 BV = 158.9 + CJO = 5.884E-010 VJ = 0.6873 M = 0.6591 XTI = 0 TT = 3.278E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/04/07 *---------- DMNH15H110SPS Spice Model ---------- .SUBCKT DMNH15H110SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0625 RS 30 3 0.0001 RG 20 2 1.28 CGS 2 3 9.515E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.96E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.4 + TOX = 1E-007 NSUB = 1E+015 KP = 21 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.465E-010 VJ = 0.7229 M = 0.6242 .MODEL DSUB D IS = 3E-009 N = 1.339 RS = 0.002171 BV = 158.9 + CJO = 5.884E-010 VJ = 0.6873 M = 0.6591 XTI = 0 TT = 3.278E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/04/07 *---------- DMNH3010LK3 Spice Model ---------- .SUBCKT DMNH3010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004289 RS 30 3 0.001 RG 20 2 2.36 CGS 2 3 1.96E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.613 + TOX = 6E-008 NSUB = 1E+016 KP = 98.69 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.191E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.341E-010 N = 1.193 RS = 0.002974 BV = 30 CJO = 3.471E-010 VJ = 0.8 M = 0.6 TT = 1.37E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH3010LK3 Spice Model v1.0 Last Revised 2015/01/07 *---------- DMNH4004SPS Spice Model ---------- .SUBCKT DMNH4004SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001243 RS 30 3 0.001 RG 20 2 1.98 CGS 2 3 2.161E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.089 + TOX = 6E-008 NSUB = 1E+016 KP = 109.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.026E-009 VJ = 0.799 M = 0.6 .MODEL DSUB D IS = 3.153E-011 N = 1.07 RS = 4.441E-010 BV = 46.5 CJO = 2.709E-009 VJ = 0.8 M = 0.6 TT = 3.583E-008 .MODEL DLIM D + IS = 0.0001 .ENDS *Diodes DMNH4004SPS Spice Model v1.0W Last Revised 2019/06/10 *---------- DMNH4005SCT Spice Model ---------- .SUBCKT DMNH4005SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 2.804E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 + TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4005SCT Spice Model v1.0M Last Revised 2016/8/30 *---------- DMNH4005SCTQ Spice Model ---------- .SUBCKT DMNH4005SCTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 2.804E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 + TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4005SCTQ Spice Model v1.0M Last Revised 2016/8/30 *---------- DMNH4005SPS Spice Model ---------- .SUBCKT DMNH4005SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 2.804E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 + TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4005SPS Spice Model v1.0M Last Revised 2018/2/1 *---------- DMNH4005SPSQ Spice Model ---------- .SUBCKT DMNH4005SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 2.804E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 + TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4005SPSQ Spice Model v1.0M Last Revised 2016/10/21 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH4005SPSW Spice Model ---------- .SUBCKT DMNH4005SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 2.804E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 + TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4005SPSW Spice Model v1.0M Last Revised 2018/2/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH4005SPSWQ Spice Model ---------- .SUBCKT DMNH4005SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.66 CGS 2 3 2.804E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 + TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4005SPSWQ Spice Model v1.0M Last Revised 2016/10/21 *---------- DMNH4006SK3 Spice Model ---------- .SUBCKT DMNH4006SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.157E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4006SK3 Spice Model v1.0 Last Revised 2015/9/10 *---------- DMNH4006SK3Q Spice Model ---------- .SUBCKT DMNH4006SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.157E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4006SK3Q Spice Model v1.0 Last Revised 2015/9/10 *---------- DMNH4006SPS Spice Model ---------- .SUBCKT DMNH4006SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.157E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4006SPS Spice Model v1.0M Last Revised 2021/3/12 *---------- DMNH4006SPSQ Spice Model ---------- .SUBCKT DMNH4006SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.157E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4006SPSQ Spice Model v1.0M Last Revised 2016/3/31 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH4006SPSW Spice Model ---------- .SUBCKT DMNH4006SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.157E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4006SPSW Spice Model v1.0M Last Revised 2021/3/12 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH4006SPSWQ Spice Model ---------- .SUBCKT DMNH4006SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.157E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4006SPSWQ Spice Model v1.0M Last Revised 2016/3/31 *---------- DMNH4011SK3 Spice Model ---------- .SUBCKT DMNH4011SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SK3 Spice Model v1.0 Last Revised 2015/06/05 *---------- DMNH4011SK3Q Spice Model ---------- .SUBCKT DMNH4011SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SK3Q Spice Model v1.0 Last Revised 2015/11/13 *---------- DMNH4011SPS Spice Model ---------- .SUBCKT DMNH4011SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SPS Spice Model v1.0M Last Revised 2016/04/28 *---------- DMNH4011SPSQ Spice Model ---------- .SUBCKT DMNH4011SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SPSQ Spice Model v1.0M Last Revised 2016/04/28 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH4011SPSW Spice Model ---------- .SUBCKT DMNH4011SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SPSW Spice Model v1.0M Last Revised 2016/04/28 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH4011SPSWQ Spice Model ---------- .SUBCKT DMNH4011SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004592 RS 30 3 0.001 RG 20 2 2.19 CGS 2 3 1.266E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 + TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4011SPSWQ Spice Model v1.0M Last Revised 2016/04/28 *---------- DMNH4015SSD Spice Model ---------- .SUBCKT DMNH4015SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005294 RS 30 3 0.001 RG 20 2 1.79 CGS 2 3 1.835E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.131 + TOX = 6E-008 NSUB = 1E+016 KP = 64.22 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.395E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.266E-010 N = 1.191 RS = 0.003973 BV = 45 CJO = 2.425E-010 VJ = 0.8 M = 0.6 TT=5E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4015SSD Spice Model v1.0M Last Revised 2016/7/18 *---------- DMNH4015SSDQ Spice Model ---------- .SUBCKT DMNH4015SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005294 RS 30 3 0.001 RG 20 2 1.79 CGS 2 3 1.835E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.131 + TOX = 6E-008 NSUB = 1E+016 KP = 64.22 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.395E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.266E-010 N = 1.191 RS = 0.003973 BV = 45 CJO = 2.425E-010 VJ = 0.8 M = 0.6 TT=5E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4015SSDQ Spice Model v1.0M Last Revised 2016/7/18 *---------- DMNH4026SSD Spice Model ---------- .SUBCKT DMNH4026SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007676 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.176E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4026SSD Spice Model v1.0 Last Revised 2015/6/17 *---------- DMNH4026SSDQ Spice Model ---------- .SUBCKT DMNH4026SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007676 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 1.176E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH4026SSDQ Spice Model v1.0 Last Revised 2015/6/17 *---------- DMNH45M7SCT Spice Model ---------- .SUBCKT DMNH45M7SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00175 RS 30 3 0.001 RG 20 2 1.92 CGS 2 3 3.985E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.89E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.15 + TOX = 6E-008 NSUB = 1E+016 KP = 165 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.5E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.046E-009 N = 1.239 RS = 4.441E-010 BV = 47.46 + CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 1.616E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH45M7SCT Spice Model v1.0J Last Revised 2018/08/06 *---------- DMNH6008SCT Spice Model ---------- .SUBCKT DMNH6008SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001343 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 2.757E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 + TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6008SCT Spice Model v1.0M Last Revised 2016/3/31 *---------- DMNH6008SCTQ Spice Model ---------- .SUBCKT DMNH6008SCTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001343 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 2.757E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 + TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6008SCTQ Spice Model v1.0M Last Revised 2016/3/31 *---------- DMNH6008SPS Spice Model ---------- .SUBCKT DMNH6008SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001343 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 2.757E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 + TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6008SPS Spice Model v1.0M Last Revised 2018/2/1 *---------- DMNH6008SPSQ Spice Model ---------- .SUBCKT DMNH6008SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001343 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 2.757E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 + TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6008SPSQ Spice Model v1.0M Last Revised 2016/3/31 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH6008SPSW Spice Model ---------- .SUBCKT DMNH6008SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001343 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 2.757E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 + TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6008SPSW Spice Model v1.0M Last Revised 2024/9/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH6008SPSWQ Spice Model ---------- .SUBCKT DMNH6008SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001343 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 2.757E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 + TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6008SPSWQ Spice Model v1.0M Last Revised 2023/7/26 *---------- DMNH6009SPS Spice Model ---------- .SUBCKT DMNH6009SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003 RS 30 3 0.0001 RG 20 2 2.09 CGS 2 3 1.744E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.29E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.53 + TOX = 1E-007 NSUB = 1E+015 KP = 72.16 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.728E-010 VJ = 0.8 M = 0.5832 .MODEL DSUB D IS = 8E-010 N = 1.24 RS = 4.441E-010 BV = 62.49 + CJO = 1.628E-009 VJ = 0.9 M = 0.499 XTI = 0 TT = 1.579E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1J Last Revised 2020/03/19 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH6009SPSW Spice Model ---------- .SUBCKT DMNH6009SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003 RS 30 3 0.0001 RG 20 2 2.09 CGS 2 3 1.744E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.29E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.53 + TOX = 1E-007 NSUB = 1E+015 KP = 72.16 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.728E-010 VJ = 0.8 M = 0.5832 .MODEL DSUB D IS = 8E-010 N = 1.24 RS = 4.441E-010 BV = 62.49 + CJO = 1.628E-009 VJ = 0.9 M = 0.499 XTI = 0 TT = 1.579E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1J Last Revised 2024/09/09 *---------- DMNH6010SCTB Spice Model ---------- .SUBCKT DMNH6010SCTB 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00355 RS 30 3 0.0001 RG 20 2 3.64 CGS 2 3 2.58E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.719 + TOX = 1E-007 NSUB = 1E+015 KP = 47.93 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.136E-009 VJ = 0.8 M = 0.7678 .MODEL DSUB D IS = 2.3E-009 N = 1.318 RS = 0.0002981 BV = 67.82 + CJO = 4.3E-009 VJ = 0.9 M = 0.4824 XTI = 0 TT = 2.58E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/24 *---------- DMNH6010SCTBQ Spice Model ---------- .SUBCKT DMNH6010SCTBQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00355 RS 30 3 0.0001 RG 20 2 3.64 CGS 2 3 2.58E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.719 + TOX = 1E-007 NSUB = 1E+015 KP = 47.93 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.136E-009 VJ = 0.8 M = 0.7678 .MODEL DSUB D IS = 2.3E-009 N = 1.318 RS = 0.0002981 BV = 67.82 + CJO = 4.3E-009 VJ = 0.9 M = 0.4824 XTI = 0 TT = 2.58E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/24 *---------- DMNH6011LK3 Spice Model ---------- .SUBCKT DMNH6011LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005917 RS 30 3 0.001 RG 20 2 1.67 CGS 2 3 2.672E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.18 + TOX = 6E-008 NSUB = 1E+016 KP = 166.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.267E-010 N = 1.16 RS = 0.0006755 BV = 70 CJO = 1.5E-009 VJ = 0.8 M = 0.6 TT = 1.4E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6011LK3 Spice Model v1.0 Last Revised 2018/3/5 *---------- DMNH6011LK3Q Spice Model ---------- .SUBCKT DMNH6011LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005917 RS 30 3 0.001 RG 20 2 1.67 CGS 2 3 2.672E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.18 + TOX = 6E-008 NSUB = 1E+016 KP = 166.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.267E-010 N = 1.16 RS = 0.0006755 BV = 70 CJO = 1.5E-009 VJ = 0.8 M = 0.6 TT = 1.4E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6011LK3Q Spice Model v1.0 Last Revised 2018/3/5 *---------- DMNH6012LK3 Spice Model ---------- .SUBCKT DMNH6012LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012LK3 Spice Model v1.0 Last Revised 2015/04/12 *---------- DMNH6012LK3Q Spice Model ---------- .SUBCKT DMNH6012LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012LK3Q Spice Model v1.0 Last Revised 2015/04/12 *---------- DMNH6012SPS Spice Model ---------- .SUBCKT DMNH6012SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012SPS Spice Model v1.0 Last Revised 2015/04/12 *---------- DMNH6012SPSQ Spice Model ---------- .SUBCKT DMNH6012SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012SPSQ Spice Model v1.0 Last Revised 2015/04/12 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH6012SPSW Spice Model ---------- .SUBCKT DMNH6012SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012SPSW Spice Model v1.0 Last Revised 2024/09/09 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH6012SPSWQ Spice Model ---------- .SUBCKT DMNH6012SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 2 CGS 2 3 1.998E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.301E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 + TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6012SPSWQ Spice Model v1.0 Last Revised 2023/07/26 *---------- DMNH6021SK3 Spice Model ---------- .SUBCKT DMNH6021SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SK3 Spice Model v1.0M Last Revised 2016/5/10 *---------- DMNH6021SK3Q Spice Model ---------- .SUBCKT DMNH6021SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SK3Q Spice Model v1.0M Last Revised 2016/5/10 *---------- DMNH6021SPD Spice Model ---------- .SUBCKT DMNH6021SPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPD Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6021SPDQ Spice Model ---------- .SUBCKT DMNH6021SPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPDQ Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6021SPDW Spice Model ---------- .SUBCKT DMNH6021SPDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPDW Spice Model v1.0M Last Revised 2019/1/17 *---------- DMNH6021SPDWQ Spice Model ---------- .SUBCKT DMNH6021SPDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPDWQ Spice Model v1.0M Last Revised 2019/1/17 *---------- DMNH6021SPS Spice Model ---------- .SUBCKT DMNH6021SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPS Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6021SPSQ Spice Model ---------- .SUBCKT DMNH6021SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPSQ Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6021SPSW Spice Model ---------- .SUBCKT DMNH6021SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPSW Spice Model v1.0M Last Revised 2020/10/30 *---------- DMNH6021SPSWQ Spice Model ---------- .SUBCKT DMNH6021SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00808 RS 30 3 0.001 RG 20 2 2.18 CGS 2 3 9.932E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 + TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6021SPSWQ Spice Model v1.0M Last Revised 2020/10/30 *---------- DMNH6022SSD Spice Model ---------- .SUBCKT DMNH6022SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01507 RS 30 3 0.001 RG 20 2 1.95 CGS 2 3 1.906E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.91 + TOX = 6E-008 NSUB = 1E+016 KP = 27.65 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.087E-010 VJ = 0.6996 M = 0.6 .MODEL DSUB D IS = 2.295E-010 N = 1.289 RS = 0.003381 BV = 67 CJO = 3.016E-010 VJ = 0.6 M = 0.6 TT=9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6022SSD Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6022SSDQ Spice Model ---------- .SUBCKT DMNH6022SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01507 RS 30 3 0.001 RG 20 2 1.95 CGS 2 3 1.906E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.91 + TOX = 6E-008 NSUB = 1E+016 KP = 27.65 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.087E-010 VJ = 0.6996 M = 0.6 .MODEL DSUB D IS = 2.295E-010 N = 1.289 RS = 0.003381 BV = 67 CJO = 3.016E-010 VJ = 0.6 M = 0.6 TT=9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6022SSDQ Spice Model v1.0M Last Revised 2016/4/28 *---------- DMNH6035SPDW Spice Model ---------- .SUBCKT DMNH6035SPDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0175 RS 30 3 0.001 RG 20 2 2.4 CGS 2 3 8.571E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.168 + TOX = 6E-008 NSUB = 1E+016 KP = 31 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 4.251E-010 VJ = 0.6601 M = 0.8 .MODEL DSUB D IS = 2.499E-011 N = 1.098 RS = 0.003986 BV = 69.2 CJO = 2.103E-009 VJ = 0.8 M = 0.6 TT = 1.423E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6035SPDW Spice Model v1.0W Last Revised 2019/03/05 *---------- DMNH6035SPDWQ Spice Model ---------- .SUBCKT DMNH6035SPDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0175 RS 30 3 0.001 RG 20 2 2.4 CGS 2 3 8.571E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.168 + TOX = 6E-008 NSUB = 1E+016 KP = 31 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 4.251E-010 VJ = 0.6601 M = 0.8 .MODEL DSUB D IS = 2.499E-011 N = 1.098 RS = 0.003986 BV = 69.2 CJO = 2.103E-009 VJ = 0.8 M = 0.6 TT = 1.423E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6035SPDWQ Spice Model v1.0W Last Revised 2019/03/05 *---------- DMNH6042SK3 Spice Model ---------- .SUBCKT DMNH6042SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042Sk3 Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH6042SK3Q Spice Model ---------- .SUBCKT DMNH6042SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042Sk3Q Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH6042SPD Spice Model ---------- .SUBCKT DMNH6042SPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPD Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH6042SPDQ Spice Model ---------- .SUBCKT DMNH6042SPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPDQ Spice Model v1.0M Last Revised 2016/4/28 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH6042SPDW Spice Model ---------- .SUBCKT DMNH6042SPDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPDW Spice Model v1.0M Last Revised 2024/9/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH6042SPDWQ Spice Model ---------- .SUBCKT DMNH6042SPDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPDWQ Spice Model v1.0M Last Revised 2024/4/8 *---------- DMNH6042SPS Spice Model ---------- .SUBCKT DMNH6042SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPS Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH6042SPSQ Spice Model ---------- .SUBCKT DMNH6042SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPSQ Spice Model v1.0M Last Revised 2016/3/4 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH6042SPSW Spice Model ---------- .SUBCKT DMNH6042SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPSW Spice Model v1.0M Last Revised 2024/9/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMNH6042SPSWQ Spice Model ---------- .SUBCKT DMNH6042SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SPSWQ Spice Model v1.0M Last Revised 2023/7/7 *---------- DMNH6042SSD Spice Model ---------- .SUBCKT DMNH6042SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SSD Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH6042SSDQ Spice Model ---------- .SUBCKT DMNH6042SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02382 RS 30 3 0.001 RG 20 2 3.84 CGS 2 3 4.735E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 + TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 .MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6042SSDQ Spice Model v1.0M Last Revised 2016/3/4 *---------- DMNH6065SPDW Spice Model ---------- .SUBCKT DMNH6065SPDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04 RS 30 3 0.001 RG 20 2 3.13 CGS 2 3 4.669E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.211 + TOX = 6E-008 NSUB = 1E+016 KP = 14 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 2.02E-010 VJ = 0.6 M = 0.7705 .MODEL DSUB D IS = 1.738E-011 N = 1.119 RS = 0.007395 BV = 70.65 CJO = 1.87E-009 VJ = 0.615 M = 0.6 TT = 1.157E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6065SPDW Spice Model v1.0W Last Revised 2019/03/05 *---------- DMNH6065SPDWQ Spice Model ---------- .SUBCKT DMNH6065SPDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04 RS 30 3 0.001 RG 20 2 3.13 CGS 2 3 4.669E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.211 + TOX = 6E-008 NSUB = 1E+016 KP = 14 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 2.02E-010 VJ = 0.6 M = 0.7705 .MODEL DSUB D IS = 1.738E-011 N = 1.119 RS = 0.007395 BV = 70.65 CJO = 1.87E-009 VJ = 0.615 M = 0.6 TT = 1.157E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6065SPDWQ Spice Model v1.0W Last Revised 2019/03/05 *---------- DMNH6065SSD Spice Model ---------- .SUBCKT DMNH6065SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04 RS 30 3 0.001 RG 20 2 3.13 CGS 2 3 4.669E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.211 + TOX = 6E-008 NSUB = 1E+016 KP = 14 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 2.02E-010 VJ = 0.6 M = 0.7705 .MODEL DSUB D IS = 1.738E-011 N = 1.119 RS = 0.007395 BV = 70.65 CJO = 1.87E-009 VJ = 0.615 M = 0.6 TT = 1.157E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DDMNH6065SSD Spice Model v1.0W Last Revised 2021/01/25 *---------- DMNH6065SSDQ Spice Model ---------- .SUBCKT DMNH6065SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04 RS 30 3 0.001 RG 20 2 3.13 CGS 2 3 4.669E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.211 + TOX = 6E-008 NSUB = 1E+016 KP = 14 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 2.02E-010 VJ = 0.6 M = 0.7705 .MODEL DSUB D IS = 1.738E-011 N = 1.119 RS = 0.007395 BV = 70.65 CJO = 1.87E-009 VJ = 0.615 M = 0.6 TT = 1.157E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6065SSDQ Spice Model v1.0W Last Revised 2021/01/25 *---------- DMNH6069SFVW Spice Model ---------- .SUBCKT DMNH6069SFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6069SFVW Spice Model v1.0 Last Revised 2021/7/20 *---------- DMNH6069SFVWQ Spice Model ---------- .SUBCKT DMNH6069SFVWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03539 RS 30 3 1E-008 RG 20 2 2.16 CGS 2 3 7.47E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 + TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 .MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNH6069SFVWQ Spice Model v1.0 Last Revised 2021/7/20 *---------- DMP1005UFDF Spice Model ---------- .SUBCKT DMP1005UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003444 RS 30 3 0.001 RG 20 2 19.5 CGS 2 3 2.289E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.9E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 177.3 KAPPA = 19.32 VTO = -0.724 .MODEL DCGD D CJO = 2.303E-009 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 8.27E-007 N = 1.204 RS = 0.01592 BV = 16 CJO = 8.775E-010 VJ = 0.6 M = 0.6 TT = 5.7E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1005UFDF Spice Model v1.0M Last Revised 2017/5/10 *---------- DMP1007UCB9 Spice Model ---------- .SUBCKT DMP1007UCB9 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0027 RS 30 3 1E-006 RG 20 2 21.35 CGS 2 3 7.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 900 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 122 KAPPA = 19.32 VTO = -0.7821 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.702E-009 N = 1.267 RS = 0.007604 BV = 9.83 + CJO = 1.2E-009 VJ = 0.8 M = 0.6 TT = 1.226E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1007UCB9 Spice Model v1.0J Last Revised 2019/02/22 *---------- DMP1008UCA9 Spice Model ---------- .SUBCKT DMP1008UCA9 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0027 RS 30 3 1E-006 RG 20 2 21.35 CGS 2 3 7.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 900 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 122 KAPPA = 19.32 VTO = -0.7821 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.702E-009 N = 1.267 RS = 0.007604 BV = 9.83 + CJO = 1.2E-009 VJ = 0.8 M = 0.6 TT = 1.226E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1008UCA9 Spice Model v1.0J Last Revised 2019/02/22 *---------- DMP1008UCB9 Spice Model ---------- .SUBCKT DMP1008UCB9 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0029 RS 30 3 0.001 RG 20 2 18 CGS 2 3 9.552E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.62E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 + VTO = -0.78 TOX = 1E-007 NSUB = 1E+015 KP = 170 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 3.441E-009 N = 1.458 RS = 1.004E-007 BV = 9.27 + CJO = 9.96E-010 VJ = 0.9 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/06 *---------- DMP1009UFDF Spice Model ---------- .SUBCKT DMP1009UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004634 RS 30 3 0.001 RG 20 2 10.24 CGS 2 3 1.427E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 112 KAPPA = 19.32 VTO = -0.9739 .MODEL DCGD D CJO = 2.402E-009 VJ = 0.6 M = 0.6079 .MODEL DSUB D IS = 2.361E-008 N = 1.199 RS = 0.01507 BV = 17 CJO = 4.956E-010 VJ = 0.6543 M = 0.6627 TT = 1.7E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1009UFDF Spice Model v1.0M Last Revised 2017/5/10 *---------- DMP1009UFDFQ Spice Model ---------- .SUBCKT DMP1009UFDFQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004634 RS 30 3 0.001 RG 20 2 10.24 CGS 2 3 1.427E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 112 KAPPA = 19.32 VTO = -0.9739 .MODEL DCGD D CJO = 2.402E-009 VJ = 0.6 M = 0.6079 .MODEL DSUB D IS = 2.361E-008 N = 1.199 RS = 0.01507 BV = 17 CJO = 4.956E-010 VJ = 0.6543 M = 0.6627 TT = 1.7E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1009UFDFQ Spice Model v1.0M Last Revised 2017/5/10 *---------- DMP1010UCA4 Spice Model ---------- .SUBCKT DMP1010UCA4 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.001 RG 20 2 20.97 CGS 2 3 5.75E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.25E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = -1.06 + TOX = 1E-007 + NSUB = 1E+015 KP = 130.3 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.005E-010 VJ = 0.1 M = 0.1613 .MODEL DSUB D IS = 6E-009 N = 1.36 RS = 0.004342 BV = 9.23 + CJO = 6.204E-010 VJ = 0.7154 M = 0.3 XTI = 0 TT = 8.67E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1010UCA4 Spice Model v1.1A Last Revised 2020/03/26 *---------- DMP1011LFV Spice Model ---------- .SUBCKT DMP1011LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004 RS 30 3 0.001 RG 20 2 1.85 DDIO 20 3 LEGD CGS 2 3 8.665E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 65.42 KAPPA = 19.32 VTO = -1.011 .MODEL DCGD D CJO = 2.008E-010 VJ = 0.8 M = 0.6424 .MODEL DSUB D IS = 9.223E-010 N = 1.195 RS = 0.007458 BV = 14.8 CJO = 6.473E-010 VJ = 1.704 M = 0.3114 TT = 6.7E-009 .MODEL DLIM D IS = 0.0001 .MODEL LEGD D IS = 5E-009 N = 1.089 RS = 0.004 BV = 7 .ENDS *Diodes DMP1011LFV Spice Model v1.0M Last Revised 2016/7/20 *---------- DMP1011LFVQ Spice Model ---------- .SUBCKT DMP1011LFVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004 RS 30 3 0.001 RG 20 2 1.85 DDIO 20 3 LEGD CGS 2 3 8.665E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 65.42 KAPPA = 19.32 VTO = -1.011 .MODEL DCGD D CJO = 2.008E-010 VJ = 0.8 M = 0.6424 .MODEL DSUB D IS = 9.223E-010 N = 1.195 RS = 0.007458 BV = 14.8 CJO = 6.473E-010 VJ = 1.704 M = 0.3114 TT = 6.7E-009 .MODEL DLIM D IS = 0.0001 .MODEL LEGD D IS = 5E-009 N = 1.089 RS = 0.004 BV = 7 .ENDS *Diodes DMP1011LFVQ Spice Model v1.0M Last Revised 2016/7/20 *---------- DMP1011UCB9 Spice Model ---------- .SUBCKT DMP1011UCB9 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003332 RS 30 3 0.001 RG 20 2 2.6 CGS 2 3 4.721E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.15E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 107.4 KAPPA = 49.86 VTO = -0.954 .MODEL DCGD D CJO = 3.351E-010 VJ = 0.2 M = 0.1104 .MODEL DSUB D IS = 2.487E-010 N = 1.095 RS = 0.01511 BV = 20 CJO = 5.861E-010 VJ = 0.6 M = 0.2823 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1011UCB9 Spice Model v1.0 Last Revised 2015/6/30 *---------- DMP1012UCB9 Spice Model ---------- .SUBCKT DMP1012UCB9 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003332 RS 30 3 0.001 RG 20 2 2.6 CGS 2 3 4.721E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.15E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 107.4 KAPPA = 49.86 VTO = -0.954 .MODEL DCGD D CJO = 3.351E-010 VJ = 0.2 M = 0.1104 .MODEL DSUB D IS = 2.487E-010 N = 1.095 RS = 0.01511 BV = 20 CJO = 5.861E-010 VJ = 0.6 M = 0.2823 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1012UCB9 Spice Model v1.0 Last Revised 2015/4/27 *---------- DMP1012UFDF Spice Model ---------- .SUBCKT DMP1012UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006 RS 30 3 0.001 RG 20 2 14.15 CGS 2 3 1.02E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.07E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 117 KAPPA = 19.32 VTO = -0.85 .MODEL DCGD D CJO = 1.347E-009 VJ = 0.6021 M = 0.6 .MODEL DSUB D IS = 1.5E-008 N = 1.44 RS = 0.004018 BV = 17.03 + CJO = 3.768E-010 VJ = 0.6 M = 0.6 TT = 2.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1012UFDF Spice Model v1.0J Last Revised 2018/08/02 *---------- DMP1012UFDF Spice Model ---------- .SUBCKT DMP1012UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006568 RS 30 3 0.001 RG 20 2 14.81 CGS 2 3 1.032E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.35E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 82.23 KAPPA = 19.32 VTO = -0.7535 .MODEL DCGD D CJO = 1.705E-009 VJ = 0.6 M = 0.6012 .MODEL DSUB D IS = 1.388E-007 N = 1.21 RS = 0.0255 BV = 10 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1012UFDF Spice Model v1.0 Last Revised 2015/8/27 *---------- DMP1012USS Spice Model ---------- .SUBCKT DMP1012USS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006 RS 30 3 0.001 RG 20 2 14.15 CGS 2 3 1.02E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.07E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 117 KAPPA = 19.32 VTO = -0.85 .MODEL DCGD D CJO = 1.347E-009 VJ = 0.6021 M = 0.6 .MODEL DSUB D IS = 1.5E-008 N = 1.44 RS = 0.004018 BV = 17.03 + CJO = 3.768E-010 VJ = 0.6 M = 0.6 TT = 2.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1012USS Spice Model v1.0J Last Revised 2018/08/02 *---------- DMP1012USSQ Spice Model ---------- .SUBCKT DMP1012USSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006 RS 30 3 0.001 RG 20 2 14.15 CGS 2 3 1.02E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.07E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 117 KAPPA = 19.32 VTO = -0.85 .MODEL DCGD D CJO = 1.347E-009 VJ = 0.6021 M = 0.6 .MODEL DSUB D IS = 1.5E-008 N = 1.44 RS = 0.004018 BV = 17.03 + CJO = 3.768E-010 VJ = 0.6 M = 0.6 TT = 2.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1012USSQ Spice Model v1.0J Last Revised 2018/08/02 *---------- DMP1018UCB9 Spice Model ---------- .SUBCKT DMP1018UCB9 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005771 RS 30 3 0.001 RG 20 2 21.23 CGS 2 3 3.759E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 58.11 KAPPA = 19.32 VTO = -0.9512 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.246E-010 N = 1.155 RS = 0.02145 BV = 14 CJO = 3.3E-010 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1018UCB9 Spice Model v1.0M Last Revised 2016/11/18 *---------- DMP1022UFDE Spice Model ---------- .SUBCKT DMP1022UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007221 RS 30 3 0.001 RG 20 2 8.6 CGS 2 3 2.328E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 74.03 KAPPA = 52.83 VTO = -0.8598 .MODEL DCGD D CJO = 1.939E-009 VJ = 0.5312 M = 0.4755 .MODEL DSUB D IS = 6.822E-009 N = 1.158 RS = 0.03057 BV = 15 CJO = 3.094E-010 VJ = 0.5406 M = 0.6337 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1022UFDE Spice Model v1.0 Last Revised 2012/4/16 *---------- DMP1022UFDEQ Spice Model ---------- .SUBCKT DMP1022UFDEQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007221 RS 30 3 0.001 RG 20 2 8.6 CGS 2 3 2.328E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 74.03 KAPPA = 52.83 VTO = -0.8598 .MODEL DCGD D CJO = 1.939E-009 VJ = 0.5312 M = 0.4755 .MODEL DSUB D IS = 6.822E-009 N = 1.158 RS = 0.03057 BV = 15 CJO = 3.094E-010 VJ = 0.5406 M = 0.6337 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1022UFDEQ Spice Model v1.0 Last Revised 2012/4/16 *---------- DMP1022UFDF Spice Model ---------- .SUBCKT DMP1022UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007221 RS 30 3 0.001 RG 20 2 8.6 CGS 2 3 2.328E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 74.03 KAPPA = 52.83 VTO = -0.8598 .MODEL DCGD D CJO = 1.939E-009 VJ = 0.5312 M = 0.4755 .MODEL DSUB D IS = 6.822E-009 N = 1.158 RS = 0.03057 BV = 15 CJO = 3.094E-010 VJ = 0.5406 M = 0.6337 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1022UFDF Spice Model v1.0 Last Revised 2015/9/21 *---------- DMP1022UWS Spice Model ---------- .SUBCKT DMP1022UWS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007221 RS 30 3 0.001 RG 20 2 8.6 CGS 2 3 2.328E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 74.03 KAPPA = 52.83 VTO = -0.8598 .MODEL DCGD D CJO = 1.939E-009 VJ = 0.5312 M = 0.4755 .MODEL DSUB D IS = 6.822E-009 N = 1.158 RS = 0.03057 BV = 15 CJO = 3.094E-010 VJ = 0.5406 M = 0.6337 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1022UWS Spice Model v1.0 Last Revised 2015/9/21 *---------- DMP1045U Spice Model ---------- .SUBCKT DMP1045U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01808 RS 30 3 0.001 RG 20 2 13.4 CGS 2 3 1.058E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.1E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 35.11 KAPPA = 19.32 VTO = -0.7328 .MODEL DCGD D CJO = 1E-009 VJ = 0.587 M = 0.4707 .MODEL DSUB D IS = 1.513E-008 N = 1.192 RS = 0.09064 + BV = 40 CJO = 1.315E-010 VJ = 0.6767 M = 0.9842 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1045U Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP1045UCB4 Spice Model ---------- .SUBCKT DMP1045UCB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.035 RS 30 3 0.001 RG 20 2 63.45 CGS 2 3 4.949E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.13E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 49 KAPPA = 19.32 VTO = -0.9 .MODEL DCGD D CJO = 2.392E-010 VJ = 0.5 M = 0.4649 .MODEL DSUB D IS = 9.038E-008 N = 1.75 RS = 0.01576 BV = 17.36 + CJO = 1.917E-010 VJ = 0.6 M = 0.4453 TT = 3.56E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/07/29 *---------- DMP1045UFY4 Spice Model ---------- .SUBCKT DMP1045UFY4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01808 RS 30 3 0.001 RG 20 2 13.4 CGS 2 3 1.058E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.1E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 35.11 KAPPA = 19.32 VTO = -0.7328 .MODEL DCGD D CJO = 1E-009 VJ = 0.587 M = 0.4707 .MODEL DSUB D IS = 1.513E-008 N = 1.192 RS = 0.09064 + BV = 40 CJO = 1.315E-010 VJ = 0.6767 M = 0.9842 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1045UFY4 Spice Model v1.0 Last Revised 2012/11/28 *---------- DMP1045UQ Spice Model ---------- .SUBCKT DMP1045UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0186 RS 30 3 0.001 RG 20 2 14.08 CGS 2 3 1.211E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.55E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.87 KAPPA = 19.32 VTO = -0.7925 .MODEL DCGD D CJO = 9E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.937E-008 N = 1.239 RS = 0.07874 BV = 16 CJO = 8E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1045UQ Spice Model v1.0M Last Revised 2017/11/17 *---------- DMP1046UFDB Spice Model ---------- .SUBCKT DMP1046UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0273 RS 30 3 0.001 RG 20 2 57 CGS 2 3 8.383E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 32.61 KAPPA = 49.86 VTO = -0.9861 .MODEL DCGD D CJO = 7.701E-010 VJ = 0.7998 M = 0.6 .MODEL DSUB D IS = 6.057E-009 N = 1.269 RS = 0.0595 BV = 20 CJO = 3.41E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1046UFDB Spice Model v1.0 Last Revised 2015/6/1 *---------- DMP1055UFDB Spice Model ---------- .SUBCKT DMP1055UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03274 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.966E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844 .MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1055UFDB Spice Model v1.0M Last Revised 2018/2/1 *---------- DMP1055USW Spice Model ---------- .SUBCKT DMP1055USW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03274 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.966E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844 .MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1055USW Spice Model v1.0M Last Revised 2016/1/28 *---------- DMP1070U Spice Model ---------- .SUBCKT DMP1070U D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-06 W = 1E-06 RD 10 1 0.0215 RS 30 3 0.0001 RG 20 2 401.4 CGS 2 3 1.52E-10 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.671E-09 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 457.6 VMAX = 1E+05 ETA = 0 IS = 0 + TOX = 1E-07 NSUB = 2.844E+15 KP = 36 KAPPA = 0.2 VTO = -0.6834 .MODEL DCGD D CJO = 5.2E-11 VJ = 0.8 M = 0.3665 .MODEL DSUB D IS = 1.78E-08 N = 1.69 RS = 0.003806 BV = 18.33 + CJO = 5.35E-10 VJ = 0.6 M = 0.5937 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/16 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP1070UCA3 Spice Model ---------- .SUBCKT DMP1070UCA3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01418 RS 30 3 1E-005 RG 20 2 13.18 CGS 2 3 1.242E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.62E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD 20 10 DE .MODEL PMOS PMOS LEVEL = 3 U0 = 900 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 7.419 KAPPA = 19.32 VTO = -0.5806 .MODEL DCGD D CJO = 7E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.074E-012 N = 1.041 RS = 0.09779 BV = 13.97 + CJO = 1.2E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .MODEL DE D BV = 7 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/03/25 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP1070UFY4 Spice Model ---------- .SUBCKT DMP1070UFY4 D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-06 W = 1E-06 RD 10 1 0.0215 RS 30 3 0.0001 RG 20 2 401.4 CGS 2 3 1.52E-10 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.671E-09 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 457.6 VMAX = 1E+05 ETA = 0 IS = 0 + TOX = 1E-07 NSUB = 2.844E+15 KP = 36 KAPPA = 0.2 VTO = -0.6834 .MODEL DCGD D CJO = 5.2E-11 VJ = 0.8 M = 0.3665 .MODEL DSUB D IS = 1.78E-08 N = 1.69 RS = 0.003806 BV = 18.33 + CJO = 5.35E-10 VJ = 0.6 M = 0.5937 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/16 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP1070UFY4Q Spice Model ---------- .SUBCKT DMP1070UFY4Q D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-06 W = 1E-06 RD 10 1 0.0215 RS 30 3 0.0001 RG 20 2 401.4 CGS 2 3 1.52E-10 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.671E-09 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 457.6 VMAX = 1E+05 ETA = 0 IS = 0 + TOX = 1E-07 NSUB = 2.844E+15 KP = 36 KAPPA = 0.2 VTO = -0.6834 .MODEL DCGD D CJO = 5.2E-11 VJ = 0.8 M = 0.3665 .MODEL DSUB D IS = 1.78E-08 N = 1.69 RS = 0.003806 BV = 18.33 + CJO = 5.35E-10 VJ = 0.6 M = 0.5937 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/16 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP1070UQ Spice Model ---------- .SUBCKT DMP1070UQ D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-06 W = 1E-06 RD 10 1 0.0215 RS 30 3 0.0001 RG 20 2 401.4 CGS 2 3 1.52E-10 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.671E-09 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 457.6 VMAX = 1E+05 ETA = 0 IS = 0 + TOX = 1E-07 NSUB = 2.844E+15 KP = 36 KAPPA = 0.2 VTO = -0.6834 .MODEL DCGD D CJO = 5.2E-11 VJ = 0.8 M = 0.3665 .MODEL DSUB D IS = 1.78E-08 N = 1.69 RS = 0.003806 BV = 18.33 + CJO = 5.35E-10 VJ = 0.6 M = 0.5937 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/16 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP1080UCB4 Spice Model ---------- .SUBCKT DMP1080UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 0.001 RG 20 2 8.92 CGS 2 3 1.587E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 12.39 KAPPA = 52.83 VTO = -0.7353 .MODEL DCGD D CJO = 1.382E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.164E-009 N = 1.16 RS = 0.1428 BV = 10 CJO = 1.849E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1080UCB4 Spice Model v1.0 Last Revised 2015/11/11 *---------- DMP1081UCB4 Spice Model ---------- .SUBCKT DMP1081UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 0.001 RG 20 2 8.92 CGS 2 3 1.587E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 12.39 KAPPA = 52.83 VTO = -0.7353 .MODEL DCGD D CJO = 1.382E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.164E-009 N = 1.16 RS = 0.1428 BV = 10 CJO = 1.849E-010 VJ = 0.8 M = 0.6 TT=6.73E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1081UCB4 Spice Model v1.0M Last Revised 2016/3/3 *---------- DMP10H088SPS Spice Model ---------- .SUBCKT DMP10H088SPS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : A M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0542 RS 30 3 0.001 RG 20 2 10.02 CGS 2 3 1.9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = -3.305 + TOX = 1E-007 + NSUB = 1E+015 KP = 42 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.602E-010 VJ = 0.8 M = 0.4049 .MODEL DSUB D IS = 7.5E-009 N = 1.498 RS = 0.0001786 BV = 105.8 + CJO = 8.564E-010 VJ = 0.9 M = 0.6909 XTI = 0 TT = 1.468E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP10H088SPS Spice Model v1.1 Last Revised 2020/09/23 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP10H088SPSW Spice Model ---------- .SUBCKT DMP10H088SPSW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : A M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0542 RS 30 3 0.001 RG 20 2 10.02 CGS 2 3 1.9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = -3.305 + TOX = 1E-007 + NSUB = 1E+015 KP = 42 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.602E-010 VJ = 0.8 M = 0.4049 .MODEL DSUB D IS = 7.5E-009 N = 1.498 RS = 0.0001786 BV = 105.8 + CJO = 8.564E-010 VJ = 0.9 M = 0.6909 XTI = 0 TT = 1.468E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP10H088SPSW Spice Model v1.1 Last Revised 2024/09/09 *---------- DMP10H400SE Spice Model ---------- .SUBCKT DMP10H400SE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1739 RS 30 3 0.001 RG 20 2 12.5 CGS 2 3 1.213E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 .MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 .MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP10H400SE Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP10H400SEQ Spice Model ---------- .SUBCKT DMP10H400SEQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1739 RS 30 3 0.001 RG 20 2 12.5 CGS 2 3 1.213E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 .MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 .MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP10H400SEQ Spice Model v1.0 Last Revised 2014/02/21 *---------- DMP10H400SK3 Spice Model ---------- .SUBCKT DMP10H400SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1739 RS 30 3 0.001 RG 20 2 12.5 CGS 2 3 1.213E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 .MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 .MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP10H400SK3 Spice Model v1.0 Last Revised 2014/02/21 *---------- DMP10H4D2S Spice Model ---------- .SUBCKT DMP10H4D2S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.621 RS 30 3 0.001 RG 20 2 15.36 CGS 2 3 8.825E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.8788 KAPPA = 19.32 VTO = -2.563 .MODEL DCGD D CJO = 1.018E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.256E-010 N = 1.508 RS = 0.08444 BV = 100 CJO = 9.972E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP10H4D2S Spice Model v1.0 Last Revised 2015/10/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP10H4D2SQ Spice Model ---------- .SUBCKT DMP10H4D2SQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.621 RS 30 3 0.001 RG 20 2 15.36 CGS 2 3 8.825E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.2E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.8788 KAPPA = 19.32 VTO = -2.563 .MODEL DCGD D CJO = 1.018E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.256E-010 N = 1.508 RS = 0.08444 BV = 100 CJO = 9.972E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP10H4D2SQ Spice Model v1.0 Last Revised 2023/08/31 *---------- DMP1100UCB4 Spice Model ---------- .SUBCKT DMP1100UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.05127 RS 30 3 0.001 RG 20 2 11.18 CGS 2 3 4.722E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.17E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 22.5 KAPPA = 52.83 VTO = -0.7673 .MODEL DCGD D CJO = 7.698E-010 VJ = 0.7898 M = 0.6 .MODEL DSUB D IS = 3.826E-009 N = 1.106 RS = 0.2748 BV = 12.8 CJO = 3.949E-011 VJ = 0.7021 M = 0.6 TT=8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1100UCB4 Spice Model v1.0M Last Revised 2016/4/12 *---------- DMP1200UFR4 Spice Model ---------- .SUBCKT DMP1200UFR4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.05886 RS 30 3 0.001 RG 20 2 264.3 CGS 2 3 3.498E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 16.25 KAPPA = 19.32 VTO = -0.7941 .MODEL DCGD D CJO = 2.183E-010 VJ = 0.6671 M = 0.6 .MODEL DSUB D IS = 2.465E-009 N = 1.19 RS = 0.2472 BV = 16.82 + CJO = 1.001E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1200UFR4 Spice Model v1.0W Last Revised 2019/07/15 *---------- DMP1245UFCL Spice Model ---------- .SUBCKT DMP1245UFCL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02066 RS 30 3 0.001 RG 20 2 14.26 CGS 2 3 1.165E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.55E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 44.55 KAPPA = 19.32 VTO = -0.7381 .MODEL DCGD D CJO = 1E-009 VJ = 0.7735 M = 0.4895 .MODEL DSUB D IS = 3.352E-008 N = 1.222 RS = 0.08392 BV = 10 CJO = 8.153E-010 VJ = 0.8984 M = 0.5258 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1245UFCL Spice Model v1.0 Last Revised 2015/9/15 *---------- DMP1555UFA Spice Model ---------- .SUBCKT DMP1555UFA D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2633 RS 30 3 0.001 RG 20 2 22.85 CGS 2 3 4.265E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.18E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.109 KAPPA = 19.32 VTO = -0.7442 .MODEL DCGD D CJO = 6.018E-011 VJ = 0.8 M = 0.7669 .MODEL DSUB D IS = 3.063E-010 N = 1.082 RS = 2.497 BV = 33.2 CJO = 1.487E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1555UFA Spice Model v1.0W Last Revised 2018/11/09 *---------- DMP2002UPS Spice Model ---------- .SUBCKT DMP2002UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 3.44 CGS 2 3 9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-008 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 392.9 KAPPA = 52.83 VTO = -1.469 .MODEL DCGD D CJO = 1.143E-008 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.821E-009 N = 1.184 RS = 5.952E-009 BV = 22 CJO = 1.797E-009 VJ = 0.8 M = 0.6 TT=3.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2002UPS Spice Model v1.0 Last Revised 2016/9/16 *---------- DMP2003UPS Spice Model ---------- .SUBCKT DMP2003UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003964 RS 30 3 0.001 RG 20 2 13.18 CGS 2 3 8.007E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 763.4 KAPPA = 19.32 VTO = -1.08 .MODEL DCGD D CJO = 1.7E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.712E-008 N = 1.174 RS = 0.0001033 BV = 25.5 CJO = 3E-009 VJ = 0.8 M = 0.6 TT = 1.2E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2003UPS Spice Model v1.0M Last Revised 2017/10/13 *SRC=DMP2004DMK;DI_DMP2004DMK;MOSFETs P;Enh;20.0V 0.550A 0.900ohms DIODES INC MOSFET .MODEL DI_DMP2004DMK PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.126 RS=0.126 + IS=275f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- *SRC=DMP2004DWK;DI_DMP2004DWK;MOSFETs P;Enh;20.0V 0.430A 0.900ohms DIODES INC MOSFET .MODEL DI_DMP2004DWK PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.126 RS=0.126 + IS=215f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- *SRC=DMP2004K;DI_DMP2004K;MOSFETs P;Enh;20.0V 0.600A 0.900ohms DIODES INC MOSFET .MODEL DI_DMP2004K PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.126 RS=0.126 + IS=300f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- *SRC=DMP2004TK;DI_DMP2004TK;MOSFETs P;Enh;20.0V 0.430A 2.40ohms DIODES INC MOSFET .MODEL DI_DMP2004TK PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=447u RD=0.336 RS=0.336 + IS=215f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- *---------- DMP2004UFG Spice Model ---------- .SUBCKT DMP2004UFG 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00058 RS 30 3 0.001 RG 20 2 4.54 CGS 2 3 3.358E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.45E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -1.12 + TOX = 1E-007 NSUB = 1E+015 KP = 210 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.846E-009 VJ = 0.7 M = 0.445 .MODEL DSUB D IS = 1.08E-008 N = 1.2 RS = 0.0017 BV = 24.02 + CJO = 8.529E-010 VJ = 0.7 M = 0.525 XTI = 0 TT = 2.648E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/11/30 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=01/03/2010 *VERSION=2 *------connections-------D_G_S * .SUBCKT DMP2004VK 1 2 3 M1 1 2 3 3 Pmod1 M2 1 2 3 3 Pmod2 M3 1 2 3 3 Pmod3 .MODEL Pmod1 PMOS(LEVEL=1 VTO=-0.95 KP=1.5 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.5 RS=0.126 + IS=265f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u) .MODEL Pmod2 PMOS(LEVEL=1 VTO=-0.75 KP=0.15 RD=50 RS=13) .MODEL Pmod3 PMOS(LEVEL=1 VTO=-0.55 KP=0.015 RD=500 RS=130) .ENDS * *$ *SRC=DMP2004WK;DI_DMP2004WK;MOSFETs P;Enh;20.0V 0.400A 0.900ohms DIODES INC MOSFET .MODEL DI_DMP2004WK PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.126 RS=0.126 + IS=200f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- *---------- DMP2005UFG Spice Model ---------- .SUBCKT DMP2005UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001373 RS 30 3 0.001 RG 20 2 3.49 CGS 2 3 4.4E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 229.3 KAPPA = 19.32 VTO = -1.122 .MODEL DCGD D CJO = 4.2E-009 VJ = 0.6 M = 0.6142 .MODEL DSUB D IS = 5.136E-008 N = 1.326 RS = 0.003606 BV = 27 CJO = 1.5E-009 VJ = 0.6 M = 0.7153 TT = 1.233E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2005UFG Spice Model v1.0M Last Revised 2016/9/14 *---------- DMP2006UFG Spice Model ---------- .SUBCKT DMP2006UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001238 RS 30 3 0.001 RG 20 2 3.74 CGS 2 3 5.072E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 175.7 KAPPA = 109 VTO = -0.848 .MODEL DCGD D CJO = 5.158E-009 VJ = 0.1101 M = 0.4567 .MODEL DSUB D IS = 4.484E-008 N = 1.181 RS = 0.006778 + BV = 30 CJO = 6.249E-010 VJ = 0.1841 M = 0.4836 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2006UFG Spice Model v1.0 Last Revised 2014/09/10 *---------- DMP2006UFGQ Spice Model ---------- .SUBCKT DMP2006UFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001238 RS 30 3 0.001 RG 20 2 3.74 CGS 2 3 5.072E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 175.7 KAPPA = 109 VTO = -0.848 .MODEL DCGD D CJO = 5.158E-009 VJ = 0.1101 M = 0.4567 .MODEL DSUB D IS = 4.484E-008 N = 1.181 RS = 0.006778 + BV = 30 CJO = 6.249E-010 VJ = 0.1841 M = 0.4836 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2006UFGQ Spice Model v1.0 Last Revised 2014/09/10 *---------- DMP2007UFG Spice Model ---------- .SUBCKT DMP2007UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002586 RS 30 3 0.001 RG 20 2 3.17 CGS 2 3 4.371E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.75E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 168.1 KAPPA = 19.32 VTO = -1.116 .MODEL DCGD D CJO = 1.4E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.87E-009 N = 1.115 RS = 0.006588 BV = 33.2 CJO = 9.504E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2007UFG Spice Model v1.0W Last Revised 2018/11/16 *DIODES_INC_SPICE_MODEL DMP2008UFG *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=23Jul2013 *VERSION=1 ** Imported from: C:UserssuppuluriDesktopDMP2008UFG.txt .SUBCKT DMP2008UFG 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 1E-3 RS 23 3 Rmod1 5E-3 RG 20 22 6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 6500E-12 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 10500E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 0.000017 Rta 30 23 1E-20 *LS 30 23 4n .MODEL Pmod1 PMOS (LEVEL=3 VTO=-.8 TOX=20E-9 NSUB=1E+16 KP=200 NFS=.18E+12 IS=1E-15 N=10) .MODEL DCGD D (CJO = 1000E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 15E-10 N=1 RS=0.01 BV=20 CJO=1000p VJ=.45 M=0.5 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3.9e-6 TC2=6E-6) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- DMP2008USS Spice Model ---------- .SUBCKT DMP2008USS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004 RS 30 3 0.001 RG 20 2 2.91 CGS 2 3 6.424E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.45E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 + VTO = -0.822 TOX = 1E-007 NSUB = 1E+014 KP = 185 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.051E-009 VJ = 0.5 M = 0.5443 .MODEL DSUB D IS = 3.652E-008 N = 1.141 RS = 0.0121 BV = 25.85 + CJO = 4.326E-010 VJ = 0.6 M = 0.8 TT = 1.316E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/06 *---------- DMP2010UFG Spice Model ---------- .SUBCKT DMP2010UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004509 RS 30 3 0.001 RG 20 2 10.72 CGS 2 3 3.102E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.3E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 192.6 KAPPA = 19.32 VTO = -1.259 .MODEL DCGD D CJO = 3E-009 VJ = 0.2228 M = 0.4828 .MODEL DSUB D IS = 2.281E-009 N = 1.168 RS = 0.007325 BV = 25 CJO = 1E-009 VJ = 0.1694 M = 0.6632 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2010UFG Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP2010UFV Spice Model ---------- .SUBCKT DMP2010UFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004509 RS 30 3 0.001 RG 20 2 10.72 CGS 2 3 3.102E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.3E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 192.6 KAPPA = 19.32 VTO = -1.259 .MODEL DCGD D CJO = 3E-009 VJ = 0.2228 M = 0.4828 .MODEL DSUB D IS = 2.281E-009 N = 1.168 RS = 0.007325 BV = 25 CJO = 1E-009 VJ = 0.1694 M = 0.6632 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2010UFV Spice Model v1.0 Last Revised 2015/7/31 *SRC=DMP2012SN;DI_DMP2012SN;MOSFETs P;Enh;20.0V 0.700A 0.370ohms Diodes Inc. MOSFET .MODEL DI_DMP2012SN PMOS( LEVEL=1 VTO=-1.20 KP=5.62u GAMMA=1.49 + PHI=.75 LAMBDA=365u RD=51.8m RS=51.8m + IS=350f PB=0.800 MJ=0.460 CBD=232p + CBS=278p CGSO=600n CGDO=500n CGBO=700n ) * -- Assumes default L=100U W=100U -- *---------- DMP2012UFDE Spice Model ---------- .SUBCKT DMP2012UFDE 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004922 RS 30 3 0.0001 RG 20 2 24.78 CGS 2 3 1.8E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.875E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 727.1 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+014 KP = 177.6 KAPPA = 0.2 VTO = -1.158 .MODEL DCGD D CJO = 6.091E-010 VJ = 0.5 M = 0.4224 .MODEL DSUB D IS = 3.83E-009 N = 1.454 RS = 0.0004607 BV = 21.87 + CJO = 5.094E-010 VJ = 0.6 M = 0.5293 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/04/01 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP2016UFDE Spice Model ---------- .SUBCKT DMP2016UFDE 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.001 RG 20 2 29.15 CGS 2 3 1.86E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.482E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 VTO = -1.05 + TOX = 1E-007 NSUB = 1E+014 KP = 200 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.725E-010 VJ = 0.5 M = 0.47 .MODEL DSUB D IS = 2.4E-009 N = 1.12 RS = 0.006 BV = 23.58 + CJO = 5.083E-010 VJ = 0.62 M = 0.5007 XTI = 0 TT = 1E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/01/08 *---------- DMP2016UFDF Spice Model ---------- .SUBCKT DMP2016UFDF 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.001 RG 20 2 29.15 CGS 2 3 1.86E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.482E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 VTO = -1.05 + TOX = 1E-007 NSUB = 1E+014 KP = 200 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.725E-010 VJ = 0.5 M = 0.47 .MODEL DSUB D IS = 2.4E-009 N = 1.12 RS = 0.006 BV = 23.58 + CJO = 5.083E-010 VJ = 0.62 M = 0.5007 XTI = 0 TT = 1E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/01/08 *---------- DMP2018LFK Spice Model ---------- .SUBCKT DMP2018LFK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.009515 RS 30 3 0.001 RG 20 2 6.2 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.617E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 136 KAPPA = 1E-012 VTO = -0.8589 .MODEL DCGD D CJO = 1.71E-009 VJ = 0.07406 M = 0.3216 .MODEL DSUB D IS = 7.934E-009 N = 1.159 RS = 0.01941 BV = 40 CJO = 1.805E-009 + VJ = 0.2466 M = 0.3518 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 .ENDS *Diodes DMP2018LFK Spice Model v1.0 Last Revised 2012/9/4 *---------- DMP2021UFDE Spice Model ---------- .SUBCKT DMP2021UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006917 RS 30 3 0.001 RG 20 2 12.02 CGS 2 3 2.686E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199 .MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6 .MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2021UFDE Spice Model v1.0 Last Revised 2015/8/18 *---------- DMP2021UFDF Spice Model ---------- .SUBCKT DMP2021UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006917 RS 30 3 0.001 RG 20 2 12.02 CGS 2 3 2.686E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199 .MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6 .MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2021UFDF Spice Model v1.0 Last Revised 2015/8/18 *---------- DMP2021UTS Spice Model ---------- .SUBCKT DMP2021UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006917 RS 30 3 0.001 RG 20 2 12.02 CGS 2 3 2.686E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199 .MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6 .MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2021UTS Spice Model v1.0 Last Revised 2015/8/18 *---------- DMP2021UTSQ Spice Model ---------- .SUBCKT DMP2021UTSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006917 RS 30 3 0.001 RG 20 2 12.02 CGS 2 3 2.686E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199 .MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6 .MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2021UTSQ Spice Model v1.0 Last Revised 2015/8/18 *---------- DMP2022LSS Spice Model ---------- .SUBCKT DMP2022LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007151 RS 30 3 0.001 RG 20 2 13.61 CGS 2 3 1.622E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 121.7 KAPPA = 19.32 VTO = -1.167 .MODEL DCGD D CJO = 1.792E-009 VJ = 0.6 M = 0.6003 .MODEL DSUB D IS = 6.504E-009 N = 1.17 RS = 0.01543 BV = 25 CJO = 1.144E-010 VJ = 0.799 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2022LSS Spice Model v1.0M Last Revised 2016/6/20 *---------- DMP2022LSSQ Spice Model ---------- .SUBCKT DMP2022LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006258 RS 30 3 0.001 RG 20 2 10.89 CGS 2 3 2.508E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 102.8 KAPPA = 19.32 VTO = -1.375 .MODEL DCGD D CJO = 1E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.189E-010 N = 1.132 RS = 0.01069 BV = 20 CJO = 6.012E-010 VJ = 0.6 M = 0.6 TT=2.423E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2022LSSQ Spice Model v1.0 Last Revised 2016/1/22 *---------- DMP2023UFDF Spice Model ---------- .SUBCKT DMP2023UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01569 RS 30 3 0.001 RG 20 2 14.79 CGS 2 3 1.643E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.95E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 77.07 KAPPA = 19.32 VTO = -0.7749 .MODEL DCGD D CJO = 1.6E-009 VJ = 0.6 M = 0.7394 .MODEL DSUB D IS = 1.175E-008 N = 1.161 RS = 0.0337 BV = 30 CJO = 3E-010 VJ = 0.6 M = 0.6625 TT=2.3E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2023UFDF Spice Model v1.0M Last Revised 2017/3/10 *---------- DMP2033UCB9 Spice Model ---------- .SUBCKT DMP2033UCB9 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02422 RS 30 3 0.001 RG 20 2 10.37 CGS 2 3 4.809E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 53.62 KAPPA = 19.32 VTO = -0.8014 .MODEL DCGD D CJO = 3.182E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.143E-009 N = 1.198 RS = 0.03934 BV = 20 CJO = 3.658E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2033UCB9 Spice Model v1.0 Last Revised 2015/11/11 *SYM=POWMOSP .SUBCKT DMP2035U D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=0.9 RD 10 1 15m RS 30 3 4m RG 20 2 9.45 CGS 2 3 1.42n EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 598p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k + ETA=0.1m VTO=-1.02 TOX=16.8n NSUB=2e17 .MODEL DCGD D CJO=598p VJ=0.150 M=0.340 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=40p VJ=0.500 M=0.450 .MODEL DLIM D IS=100U .ENDS *---------- DMP2035UFCL Spice Model ---------- .SUBCKT DMP2035UFCL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01433 RS 30 3 0.001 RG 20 2 11.12 CGS 2 3 1.682E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 .MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2035UFCL Spice Model v1.0 Last Revised 2015/9/23 *---------- DMP2035UFDF Spice Model ---------- .SUBCKT DMP2035UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01433 RS 30 3 0.001 RG 20 2 11.12 CGS 2 3 1.682E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 .MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2035UFDF Spice Model v1.0 Last Revised 2015/9/23 *---------- DMP2035UTS Spice Model ---------- .SUBCKT DMP2035UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02108 RS 30 3 0.001 RG 20 2 9.45 CGS 2 3 1.503E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.47E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 8.718E+005 KP = 43.38 ETA = 0.0009338 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 7.975 VTO = -0.784 .MODEL DCGD D CJO = 6.223E-010 VJ = 0.1355 M = 0.3364 .MODEL DSUB D IS = 2.917E-008 N = 1.315 RS = 0.04378 BV = 25 CJO = 6.786E-012 VJ = 1 M = 0.001 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2035UTS Spice Model v1.0 Last Revised 2011/2/11 *---------- DMP2035UVT Spice Model ---------- .SUBCKT DMP2035UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01433 RS 30 3 0.001 RG 20 2 11.12 CGS 2 3 1.682E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 .MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2035UVT Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP2035UVTQ Spice Model ---------- .SUBCKT DMP2035UVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01433 RS 30 3 0.001 RG 20 2 11.12 CGS 2 3 1.682E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 .MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2035UVTQ Spice Model v1.0 Last Revised 2016/9/26 *---------- DMP2036UVT Spice Model ---------- .SUBCKT DMP2036UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01433 RS 30 3 0.001 RG 20 2 11.12 CGS 2 3 1.682E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 .MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2036UVT Spice Model v1.0 Last Revised 2015/9/23 *---------- DMP2036UVTQ Spice Model ---------- .SUBCKT DMP2036UVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01433 RS 30 3 0.001 RG 20 2 11.12 CGS 2 3 1.682E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 .MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2036UVTQ Spice Model v1.0 Last Revised 2015/9/23 *---------- DMP2037U Spice Model ---------- .SUBCKT DMP2037U 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.019 RS 30 3 0.001 RG 20 2 65.53 CGS 2 3 8.682E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.705E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 VTO = -1.25 + TOX = 1E-007 NSUB = 1E+015 KP = 120 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.885E-010 VJ = 0.5 M = 0.4 .MODEL DSUB D IS = 1.3E-009 N = 1.22 RS = 0.009 BV = 23.13 + CJO = 1.683E-010 VJ = 0.7 M = 0.3807 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/09/24 *---------- DMP2037UFCL Spice Model ---------- .SUBCKT DMP2037UFCL 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.019 RS 30 3 0.001 RG 20 2 65.53 CGS 2 3 8.682E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.705E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 VTO = -1.25 + TOX = 1E-007 NSUB = 1E+015 KP = 120 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.885E-010 VJ = 0.5 M = 0.4 .MODEL DSUB D IS = 1.3E-009 N = 1.22 RS = 0.009 BV = 23.13 + CJO = 1.683E-010 VJ = 0.7 M = 0.3807 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/09/24 *---------- DMP2038USS Spice Model ---------- .SUBCKT DMP2038USS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02073 RS 30 3 0.001 RG 20 2 10.39 CGS 2 3 1.384E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 44.98 KAPPA = 19.32 VTO = -0.9359 .MODEL DCGD D CJO = 7.175E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 6.359E-007 N = 1.663 RS = 0.09391 BV = 20 CJO = 1.769E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2038USS Spice Model v1.0M Last Revised 2016/1/27 *---------- DMP2039UFDE Spice Model ---------- .SUBCKT DMP2039UFDE D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0167 RS 30 3 0.001 RG 20 2 9.11 CGS 2 3 2.452E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.12E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 91.12 KAPPA = 19.32 VTO = -0.8283 .MODEL DCGD D CJO = 9.335E-010 VJ = 0.7629 M = 0.6 .MODEL DSUB D IS = 9.547E-009 N = 1.183 RS = 0.03346 BV = 27.42 CJO = 1.487E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2039UFDE Spice Model v1.0W Last Revised 2018/11/26 *---------- DMP2040UFDF Spice Model ---------- .SUBCKT DMP2040UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01579 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.293E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 .MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2040UFDF Spice Model v1.0 Last Revised 2015/12/9 *---------- DMP2040UND Spice Model ---------- .SUBCKT DMP2040UND 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.022 RS 30 3 0.001 RG 20 2 4.96 CGS 2 3 7.6E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.13E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 VTO = -1.05 + TOX = 1E-007 NSUB = 1E+015 KP = 50 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.825E-010 VJ = 0.5 M = 0.59 .MODEL DSUB D IS = 9E-010 N = 1.24 RS = 0.0115 BV = 24.38 + CJO = 2.083E-010 VJ = 0.6 M = 0.6907 XTI = 0 TT = 4.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/03/08 *---------- DMP2040USD Spice Model ---------- .SUBCKT DMP2040USD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01579 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.293E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 .MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2040USD Spice Model v1.0 Last Revised 2015/12/9 *---------- DMP2040USS Spice Model ---------- .SUBCKT DMP2040USS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01579 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.293E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 .MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2040USS Spice Model v1.0 Last Revised 2015/12/9 *---------- DMP2040UVT Spice Model ---------- .SUBCKT DMP2040UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01579 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.293E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 .MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2040UVT Spice Model v1.0 Last Revised 2015/12/9 *---------- DMP2040UVTQ Spice Model ---------- .SUBCKT DMP2040UVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01579 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.293E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 .MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2040UVTQ Spice Model v1.0 Last Revised 2015/12/9 *---------- DMP2040UVTQ Spice Model ---------- .SUBCKT DMP2040UVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01579 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.293E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 .MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2040UVTQ Spice Model v1.0 Last Revised 2015/12/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP2040UVTQ Spice Model ---------- .SUBCKT DMP2040UVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01579 RS 30 3 0.001 RG 20 2 4.88 CGS 2 3 7.293E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 .MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2040UVTQ Spice Model v1.0 Last Revised 2021/12/9 *---------- DMP2042UCB4 Spice Model ---------- .SUBCKT DMP2042UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02838 RS 30 3 0.001 RC 20 5 5000 RG 5 2 23 DDIO 5 3 LEGD2 DDIO2 20 3 LEGD CGS 2 3 3.6E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.1 KAPPA = 19.32 VTO = -0.8036 .MODEL DCGD D CJO = 3.548E-011 VJ = 0.6001 M = 0.8 .MODEL DSUB D IS = 4.84E-009 N = 1.313 RS = 0.0601 BV = 21.3 CJO = 4.2E-010 VJ = 0.8 M = 0.6 TT = 2.3E-007 .MODEL DLIM D IS = 0.0001 .MODEL LEGD D IS = 5E-009 N = 1.089 RS = 0.004 BV = 22 .MODEL LEGD2 D IS = 5E-009 N = 1.089 RS = 0.004 BV = 7 .ENDS *Diodes DMP2042UCB4 Spice Model v1.0M Last Revised 2016/7/7 *---------- DMP2042UCP4 Spice Model ---------- .SUBCKT DMP2042UCP4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02838 RS 30 3 0.001 RC 20 5 5000 RG 5 2 23 DDIO 5 3 LEGD2 DDIO2 20 3 LEGD CGS 2 3 3.6E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.1 KAPPA = 19.32 VTO = -0.8036 .MODEL DCGD D CJO = 3.548E-011 VJ = 0.6001 M = 0.8 .MODEL DSUB D IS = 4.84E-009 N = 1.313 RS = 0.0601 BV = 21.3 CJO = 4.2E-010 VJ = 0.8 M = 0.6 TT = 2.3E-007 .MODEL DLIM D IS = 0.0001 .MODEL LEGD D IS = 5E-009 N = 1.089 RS = 0.004 BV = 22 .MODEL LEGD2 D IS = 5E-009 N = 1.089 RS = 0.004 BV = 7 .ENDS *Diodes DMP2042UCP4 Spice Model v1.0M Last Revised 2016/7/7 *---------- DMP2045U Spice Model ---------- .SUBCKT DMP2045U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02122 RS 30 3 0.001 RG 20 2 15.49 CGS 2 3 5.691E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.45 KAPPA = 19.32 VTO = -0.6929 .MODEL DCGD D CJO = 3.761E-010 VJ = 0.603 M = 0.6 .MODEL DSUB D IS = 1.411E-007 N = 1.273 RS = 0.06795 BV = 24 CJO = 9.406E-011 VJ = 0.6 M = 0.6 TT = 4.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2045U Spice Model v1.0M Last Revised 2018/1/19 *---------- DMN1008UFDFQ Spice Model ---------- .SUBCKT DMN1008UFDFQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003143 RS 30 3 0.001 RG 20 2 1.45 CGS 2 3 7.277E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7348 + TOX = 6E-008 NSUB = 1E+016 KP = 114.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.145E-009 VJ = 0.8 M = 0.6716 .MODEL DSUB D IS = 1.104E-007 N = 1.389 RS = 0.01258 BV = 19 CJO = 2.22E-010 VJ = 0.6 M = 0.6283 TT = 7.62E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN1008UFDFQ Spice Model v1.0M Last Revised 2016/9/5 *---------- DMP2045UFY4 Spice Model ---------- .SUBCKT DMP2045UFY4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02122 RS 30 3 0.001 RG 20 2 15.49 CGS 2 3 5.691E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.45 KAPPA = 19.32 VTO = -0.6929 .MODEL DCGD D CJO = 3.761E-010 VJ = 0.603 M = 0.6 .MODEL DSUB D IS = 1.411E-007 N = 1.273 RS = 0.06795 BV = 24 CJO = 9.406E-011 VJ = 0.6 M = 0.6 TT = 4.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2045UFY4 Spice Model v1.0M Last Revised 2018/1/19 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP2045UQ Spice Model ---------- .SUBCKT DMP2045UQQQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02122 RS 30 3 0.001 RG 20 2 15.49 CGS 2 3 5.691E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.45 KAPPA = 19.32 VTO = -0.6929 .MODEL DCGD D CJO = 3.761E-010 VJ = 0.603 M = 0.6 .MODEL DSUB D IS = 1.411E-007 N = 1.273 RS = 0.06795 BV = 24 CJO = 9.406E-011 VJ = 0.6 M = 0.6 TT = 4.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2045UQ Spice Model v1.0M Last Revised 2018/1/19 *---------- DMP2047UCB4 Spice Model ---------- .SUBCKT DMP2047UCB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03311 RS 30 3 1E-006 RG 20 2 23.31 CGS 2 3 1.988E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.56E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 20.83 KAPPA = 19.32 VTO = -0.7491 .MODEL DCGD D CJO = 1.019E-010 VJ = 0.8 M = 0.7524 .MODEL DSUB D IS = 1E-008 N = 1.499 RS = 0.0383 BV = 22.13 + CJO = 3.176E-010 VJ = 0.8 M = 0.6 TT = 6.57E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2047UCB4 Spice Model v1.0J Last Revised 2019/02/22 *---------- DMP2056UCA4 Spice Model ---------- .SUBCKT DMP2056UCA4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04982 RS 30 3 0.0001 RG 20 2 59.28 CGS 2 3 4.253E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.826E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 70.54 KAPPA = 0.2 VTO = -1.162 .MODEL DCGD D CJO = 1.45E-010 VJ = 0.5 M = 0.5064 .MODEL DSUB D IS = 7.4E-010 N = 1.235 RS = 0.03494 BV = 28.2 + CJO = 1.07E-010 VJ = 0.6 M = 0.4425 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/07/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP2060UFDB Spice Model ---------- .SUBCKT DMP2060UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04027 RS 30 3 0.001 RG 20 2 14.26 CGS 2 3 8.265E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 15.22 KAPPA = 19.32 VTO = -0.8531 .MODEL DCGD D CJO = 4.776E-010 VJ = 0.6 M = 0.6513 .MODEL DSUB D IS = 1.393E-009 N = 1.162 RS = 0.1017 BV = 23.96 + CJO = 9.24E-011 VJ = 0.6003 M = 0.6 TT = 1.18E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2060UFDB Spice Model v1.0M Last Revised 2018/5/12 *---------- DMP2065U Spice Model ---------- .SUBCKT DMP2065U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02969 RS 30 3 0.001 RG 20 2 15.2 CGS 2 3 7.613E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.28E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.49 KAPPA = 65.74 VTO = -0.8201 .MODEL DCGD D CJO = 5.79E-010 VJ = 0.2973 M = 0.5774 .MODEL DSUB D IS = 3.162E-009 N = 1.241 RS = 0.08353 BV = 1E+006 CJO = 5.653E-011 VJ = 0.008286 M = 0.1128 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2065U Spice Model v1.0 Last Revised 2020/2/1 *---------- DMP2065UFDB Spice Model ---------- .SUBCKT DMP2065UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02969 RS 30 3 0.001 RG 20 2 15.2 CGS 2 3 7.613E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.28E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.49 KAPPA = 65.74 VTO = -0.8201 .MODEL DCGD D CJO = 5.79E-010 VJ = 0.2973 M = 0.5774 .MODEL DSUB D IS = 3.162E-009 N = 1.241 RS = 0.08353 BV = 1E+006 CJO = 5.653E-011 VJ = 0.008286 M = 0.1128 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2065UFDB Spice Model v1.0 Last Revised 2013/10/22 *---------- DMP2065UQ Spice Model ---------- .SUBCKT DMP2065UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02969 RS 30 3 0.001 RG 20 2 15.2 CGS 2 3 7.613E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.28E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.49 KAPPA = 65.74 VTO = -0.8201 .MODEL DCGD D CJO = 5.79E-010 VJ = 0.2973 M = 0.5774 .MODEL DSUB D IS = 3.162E-009 N = 1.241 RS = 0.08353 BV = 1E+006 CJO = 5.653E-011 VJ = 0.008286 M = 0.1128 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2065UQ Spice Model v1.0 Last Revised 2018/2/1 *SRC=DMP2066LDM;DI_DMP2066LDM;MOSFETs P;Enh;20.0V 4.60A 40.0mohms *SYM=POWMOSP .SUBCKT DI_DMP2066LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 18.0m RS 40 3 2.00m RG 20 2 32.6 CGS 2 3 660p EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 1.47n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=-1.20 KP=43.8 .MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680 .MODEL DSUB D (IS=19.1n N=1.50 RS=0.141 BV=20.0 + CJO=350p VJ=0.800 M=0.420 TT=223n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMP2066LSD;DI_DMP2066LSD;MOSFETs P;Enh;20.0V 5.80A 40.0mohms *SYM=POWMOSP .SUBCKT DI_DMP2066LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 18.0m RS 40 3 2.00m RG 20 2 25.9 CGS 2 3 660p EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 1.47n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=-1.20 KP=43.8 .MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.1n N=1.50 RS=0.112 BV=20.0 + CJO=350p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS *---------- DMP2066SFG Spice Model ---------- .SUBCKT DMP2066SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02073 RS 30 3 0.001 RG 20 2 10.39 CGS 2 3 1.384E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 44.98 KAPPA = 19.32 VTO = -0.9359 .MODEL DCGD D CJO = 7.175E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 6.359E-007 N = 1.663 RS = 0.09391 BV = 20 CJO = 1.769E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2066SFG Spice Model v1.0M Last Revised 2016/1/27 *SRC=DMP2066LSS;DI_DMP2066LSS;MOSFETs P;Enh;20.0V 6.50A 40.0mohms *SYM=POWMOSP .SUBCKT DI_DMP2066LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 18.0m RS 40 3 2.00m RG 20 2 23.1 CGS 2 3 660p EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 1.47n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=-1.20 KP=43.8 .MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=0.100 BV=20.0 + CJO=350p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS *---------- DMP2066LVT Spice Model ---------- .SUBCKT DMP2066LVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02066 RS 30 3 0.001 RG 20 2 10.4 CGS 2 3 1.463E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.36E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.59 KAPPA = 49.86 VTO = -0.9435 .MODEL DCGD D CJO = 5.044E-010 VJ = 0.2 M = 0.3439 .MODEL DSUB D IS = 1E-006 N = 1.73 RS = 0.08493 BV = 25 CJO = 9.596E-011 VJ = 0.2 M = 0.4531 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2066LVT Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP2066UFDE Spice Model ---------- .SUBCKT DMP2066UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02066 RS 30 3 0.001 RG 20 2 10.4 CGS 2 3 1.463E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.36E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.59 KAPPA = 49.86 VTO = -0.9435 .MODEL DCGD D CJO = 5.044E-010 VJ = 0.2 M = 0.3439 .MODEL DSUB D IS = 1E-006 N = 1.73 RS = 0.08493 BV = 25 CJO = 9.596E-011 VJ = 0.2 M = 0.4531 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2066UFDE Spice Model v1.0 Last Revised 2013/4/30 ---------- DMP2067LSS Spice Model ---------- .SUBCKT DMP2067LSS 10 20 30 TERMINALS D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02377 RS 30 3 0.001 RG 20 2 10.25 CGS 2 3 1.494E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.78E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 34 KAPPA = 19.32 VTO = -0.8089 .MODEL DCGD D CJO = 5.85E-010 VJ = 0.6 M = 0.6676 .MODEL DSUB D IS = 6.061E-011 N = 1.2 RS = 0.00924 BV = 30.28 + CJO = 1.049E-010 VJ = 0.8 M = 0.6 TT = 6.525E-009 .MODEL DLIM D IS = 0.0001 .ENDS Diodes DMP2067LSS Spice Model v1.0J Last Revised 20180828 ---------- DMP2067LSS Spice Model ---------- .SUBCKT DMP2067LSS 10 20 30 TERMINALS D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02377 RS 30 3 0.001 RG 20 2 10.25 CGS 2 3 1.494E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.78E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 34 KAPPA = 19.32 VTO = -0.8089 .MODEL DCGD D CJO = 5.85E-010 VJ = 0.6 M = 0.6676 .MODEL DSUB D IS = 6.061E-011 N = 1.2 RS = 0.00924 BV = 30.28 + CJO = 1.049E-010 VJ = 0.8 M = 0.6 TT = 6.525E-009 .MODEL DLIM D IS = 0.0001 .ENDS Diodes DMP2067LSS Spice Model v1.0J Last Revised 20180828 ---------- DMP2067LVT Spice Model ---------- .SUBCKT DMP2067LVT 10 20 30 TERMINALS D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02377 RS 30 3 0.001 RG 20 2 10.25 CGS 2 3 1.494E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.78E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 34 KAPPA = 19.32 VTO = -0.8089 .MODEL DCGD D CJO = 5.85E-010 VJ = 0.6 M = 0.6676 .MODEL DSUB D IS = 6.061E-011 N = 1.2 RS = 0.00924 BV = 30.28 + CJO = 1.049E-010 VJ = 0.8 M = 0.6 TT = 6.525E-009 .MODEL DLIM D IS = 0.0001 .ENDS Diodes DMP2067LVT Spice Model v1.0J Last Revised 20180828 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. ---------- DMP2067LVTQ Spice Model ---------- .SUBCKT DMP2067LVTQ 10 20 30 TERMINALS D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02377 RS 30 3 0.001 RG 20 2 10.25 CGS 2 3 1.494E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.78E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 34 KAPPA = 19.32 VTO = -0.8089 .MODEL DCGD D CJO = 5.85E-010 VJ = 0.6 M = 0.6676 .MODEL DSUB D IS = 6.061E-011 N = 1.2 RS = 0.00924 BV = 30.28 + CJO = 1.049E-010 VJ = 0.8 M = 0.6 TT = 6.525E-009 .MODEL DLIM D IS = 0.0001 .ENDS Diodes DMP2067LVTQ Spice Model v1.0J Last Revised 20180828 *---------- DMP2068UFY4Q Spice Model ---------- .SUBCKT DMP2068UFY4Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01899 RS 30 3 0.0001 RG 20 2 391.2 CGS 2 3 8.729E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.272E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 30.43 KAPPA = 0.2 VTO = -0.9092 .MODEL DCGD D CJO = 6.133E-010 VJ = 0.5 M = 0.588 .MODEL DSUB D IS = 7.144E-009 N = 1.258 RS = 0.01506 BV = 17.86 + CJO = 6.312E-011 VJ = 0.6 M = 0.3 XTI = 0 TT = 1.96E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/30 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP2069UFY4 Spice Model ---------- .SUBCKT DMP2069UFY4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0317 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.65E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.464E+005 KP = 25.76 ETA = 0.005087 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.7287 VTO = -0.7669 .MODEL DCGD D CJO = 4.12E-010 VJ = 0.1028 M = 0.3062 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 2.196E-010 VJ = 0.2994 M = 0.4305 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2069UFY4 Spice Model v1.0 Last Revised 2011/3/25 *---------- DMP2069UFY4Q Spice Model ---------- .SUBCKT DMP2069UFY4Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0317 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.65E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.464E+005 KP = 25.76 ETA = 0.005087 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.7287 VTO = -0.7669 .MODEL DCGD D CJO = 4.12E-010 VJ = 0.1028 M = 0.3062 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 2.196E-010 VJ = 0.2994 M = 0.4305 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2069UFY4Q Spice Model v1.0 Last Revised 2011/3/25 *---------- DMP2070U Spice Model ---------- .SUBCKT DMP2070U 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 0.001 RG 20 2 458.8 CGS 2 3 1.062E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.78E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 VTO = -0.98 + TOX = 1E-007 NSUB = 1E+015 KP = 30.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.6E-011 VJ = 0.6 M = 0.3 .MODEL DSUB D IS = 2.5E-010 N = 1.12 RS = 0.013 BV = 29.17 + CJO = 4.783E-010 VJ = 0.6 M = 0.7 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/28 *---------- DMP2070U Spice Model ---------- .SUBCKT DMP2070U 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 0.001 RG 20 2 458.8 CGS 2 3 1.062E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.78E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 VTO = -0.98 + TOX = 1E-007 NSUB = 1E+015 KP = 30.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.6E-011 VJ = 0.6 M = 0.3 .MODEL DSUB D IS = 2.5E-010 N = 1.12 RS = 0.013 BV = 29.17 + CJO = 4.783E-010 VJ = 0.6 M = 0.7 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/28 ---------- DMP2070UFY4 Spice Model ---------- .SUBCKT DMP2070UFY4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.009573 RS 30 3 0.0001 RG 20 2 424 CGS 2 3 8.516E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.138E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 14.36 KAPPA = 0.2 VTO = -0.7089 .MODEL DCGD D CJO = 5.63E-010 VJ = 0.5 M = 0.7061 .MODEL DSUB D IS = 4.126E-009 N = 1.435 RS = 0.013 BV = 24.26 + CJO = 3E-011 VJ = 0.9 M = 0.1 XTI = 0 TT = 1.474E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/30 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. ---------- DMP2070UFY4Q Spice Model ---------- .SUBCKT DMP2070UFY4Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.009573 RS 30 3 0.0001 RG 20 2 424 CGS 2 3 8.516E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.138E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 14.36 KAPPA = 0.2 VTO = -0.7089 .MODEL DCGD D CJO = 5.63E-010 VJ = 0.5 M = 0.7061 .MODEL DSUB D IS = 4.126E-009 N = 1.435 RS = 0.013 BV = 24.26 + CJO = 3E-011 VJ = 0.9 M = 0.1 XTI = 0 TT = 1.474E-007 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/30 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP2075UVT Spice Model ---------- .SUBCKT DMP2075UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02612 RS 30 3 0.001 RG 20 2 26.51 CGS 2 3 5.672E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.06E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 23.92 KAPPA = 19.32 VTO = -0.9311 .MODEL DCGD D CJO = 6.453E-010 VJ = 0.6 M = 0.6785 .MODEL DSUB D IS = 5.603E-009 N = 1.186 RS = 0.0814 BV = 21.5 CJO = 6.709E-011 VJ = 0.6 M = 0.6465 TT= 6.5E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2075UVT Spice Model v1.0M Last Revised 2018/8/28 *---------- DMP2077UCA3 Spice Model ---------- .SUBCKT DMP2077UCA3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.05242 RS 30 3 0.001 RG 20 2 4.74 CGS 2 3 1.406E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.31E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 11.92 KAPPA = 19.32 VTO = -0.8763 .MODEL DCGD D CJO = 2.423E-011 VJ = 0.8 M = 0.6517 .MODEL DSUB D IS = 5.59E-009 N = 1.511 RS = 0.04959 BV = 20.89 + CJO = 2.205E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2077UCA3 Spice Model v1.0J Last Revised 2018/12/7 *---------- DMP2078LCA3 Spice Model ---------- .SUBCKT DMP2078LCA3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03918 RS 30 3 0.001 RG 20 2 21.22 CGS 2 3 1.462E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.672 KAPPA = 19.32 VTO = -0.9423 .MODEL DCGD D CJO = 3.289E-011 VJ = 0.8 M = 0.7232 .MODEL DSUB D IS = 3.857E-010 N = 1.293 RS = 0.06577 BV = 21.5 CJO = 2E-010 VJ = 0.8 M = 0.6 TT = 3.8E-009 .MODEL DLIM D IS = 0.0001 .MODEL LEGD D IS = 5E-009 N = 1.089 RS = 0.004 BV = 14 .ENDS *Diodes DMP2078LCA3 Spice Model v1.0M Last Revised 2017/9/27 *---------- DMP2079LCA3 Spice Model ---------- .SUBCKT DMP2079LCA3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03918 RS 30 3 0.001 RG 20 2 21.22 CGS 2 3 1.462E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.672 KAPPA = 19.32 VTO = -0.9423 .MODEL DCGD D CJO = 3.289E-011 VJ = 0.8 M = 0.7232 .MODEL DSUB D IS = 3.857E-010 N = 1.293 RS = 0.06577 BV = 21.5 CJO = 2E-010 VJ = 0.8 M = 0.6 TT = 3.8E-009 .MODEL DLIM D IS = 0.0001 .MODEL LEGD D IS = 5E-009 N = 1.089 RS = 0.004 BV = 14 .ENDS *Diodes DMP2079LCA3 Spice Model v1.0M Last Revised 2017/9/27 *---------- DMP2088LCP3 Spice Model ---------- .SUBCKT DMP2088LCP3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.054 RS 30 3 0.001 RG 20 2 17.94 CGS 2 3 1.138E-010 DDIO 2 3 LEGD EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 7.376 KAPPA = 19.32 VTO = -1.139 .MODEL DCGD D CJO = 3.616E-011 VJ = 1 M = 0.7818 .MODEL DSUB D IS = 5.68E-010 N = 1.345 RS = 0.05418 BV = 22.7 CJO = 1.528E-010 VJ = 1 M = 0.3534 TT=2.8E-09 .MODEL DLIM D IS = 0.0001 .MODEL LEGD D IS = 5E-009 N = 1.089 RS = 0.004 BV = 14 .ENDS *Diodes DMP2088LCP3 Spice Model v1.0M Last Revised 2016/7/6 *---------- DMP2090UFDB Spice Model ---------- .SUBCKT DMP2090UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02122 RS 30 3 0.001 RG 20 2 15.49 CGS 2 3 5.691E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.45 KAPPA = 19.32 VTO = -0.6929 .MODEL DCGD D CJO = 3.761E-010 VJ = 0.603 M = 0.6 .MODEL DSUB D IS = 1.411E-007 N = 1.273 RS = 0.06795 BV = 24 CJO = 9.406E-011 VJ = 0.6 M = 0.6 TT = 4.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2090UFDB Spice Model v1.0M Last Revised 2019/11/19 *---------- DMP2100U Spice Model ---------- .SUBCKT DMP2100U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0317 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.65E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.464E+005 KP = 25.76 ETA = 0.005087 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.7287 VTO = -0.7669 .MODEL DCGD D CJO = 4.12E-010 VJ = 0.1028 M = 0.3062 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 2.196E-010 VJ = 0.2994 M = 0.4305 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2100U Spice Model v1.0 Last Revised 2013/1/18 *---------- DMP2100UFU Spice Model ---------- .SUBCKT DMP2100UFU 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01885 RS 30 3 0.001 RG 20 2 259 CGS 2 3 8.967E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.18E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 20.27 KAPPA = 19.32 VTO = -0.5 .MODEL DCGD D CJO = 8.447E-011 VJ = 0.3714 M = 0.3197 .MODEL DSUB D IS = 5.083E-010 N = 1.362 RS = 0.02549 BV = 25 CJO = 2.887E-010 VJ = 0.2487 M = 0.4372 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2100UFU Spice Model v1.0 Last Revised 2015/7/2 *---------- DMP2100UQ Spice Model ---------- .SUBCKT DMP2100UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01885 RS 30 3 0.001 RG 20 2 259 CGS 2 3 8.967E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.18E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 20.27 KAPPA = 19.32 VTO = -0.5 .MODEL DCGD D CJO = 8.447E-011 VJ = 0.3714 M = 0.3197 .MODEL DSUB D IS = 5.083E-010 N = 1.362 RS = 0.02549 BV = 25 CJO = 2.887E-010 VJ = 0.2487 M = 0.4372 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2100UQ Spice Model v1.0 Last Revised 2015/7/2 *---------- DMP2101UCB9 Spice Model ---------- .SUBCKT DMP2101UCB9 D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007 RS 30 3 0.001 RG 20 2 5.2 CGS 2 3 3.815E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 16.06 KAPPA = 19.32 VTO = -0.7995 .MODEL DCGD D CJO = 7.726E-011 VJ = 0.8 M = 0.7444 .MODEL DSUB D IS = 2.783E-010 N = 0.927 RS = 0.2456 BV = 22.12 + CJO = 4.88E-010 VJ = 0.8 M = 0.6 TT = 5.26E-009 .ENDS *Diodes DMP2101UCB9 Spice Model v1.0J Last Revised 2018/07/19 *---------- DMP2101UCP9 Spice Model ---------- .SUBCKT DMP2101UCP9 D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007 RS 30 3 0.001 RG 20 2 5.2 CGS 2 3 3.815E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 16.06 KAPPA = 19.32 VTO = -0.7995 .MODEL DCGD D CJO = 7.726E-011 VJ = 0.8 M = 0.7444 .MODEL DSUB D IS = 2.783E-010 N = 0.927 RS = 0.2456 BV = 22.12 + CJO = 4.88E-010 VJ = 0.8 M = 0.6 TT = 5.26E-009 .ENDS *Diodes DMP2101UCP9 Spice Model v1.0J Last Revised 2018/07/19 *---------- DMP2104LP Spice Model ---------- .SUBCKT DMP2104LP 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.048 RS 30 3 0.001 RG 20 2 48.48 CGS 2 3 4.882E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.305E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 VTO = -0.88 + TOX = 1E-007 NSUB = 1E+015 KP = 21 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.455E-010 VJ = 0.5 M = 0.56 .MODEL DSUB D IS = 1.8E-009 N = 1.23 RS = 0.06 BV = 25.6 + CJO = 5.29E-011 VJ = 0.7 M = 0.645 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/10/16 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=01/03/2010 *VERSION=2 *------connections-------D_G_S * .SUBCKT DMP2104V 1 2 3 M1 1 2 3 3 Pmod1 M2 1 2 3 3 Pmod2 M3 1 2 3 3 Pmod3 .MODEL Pmod1 PMOS(LEVEL=1 VTO=-1.08 KP=11.9 GAMMA=1.24 + PHI=.75 LAMBDA=244u RD=45m RS=21.0m + IS=475f PB=0.800 MJ=0.460 CBD=81.1p + CBS=97.4p CGSO=720n CGDO=600n CGBO=1.88u) .MODEL Pmod2 PMOS(LEVEL=1 VTO=-0.88 KP=1.2 RD=45 RS=2.1) .MODEL Pmod3 PMOS(LEVEL=1 VTO=-0.68 KP=0.12 RD=450 RS=210) .ENDS * *$ *---------- DMP2108UCB6 Spice Model ---------- .SUBCKT DMP2108UCB6 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02735 RS 30 3 0.001 RG 20 2 18.6 CGS 2 3 2.584E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 20.8 KAPPA = 19.32 VTO = -0.9344 .MODEL DCGD D CJO = 5.721E-011 VJ = 0.8 M = 0.7312 .MODEL DSUB D IS = 1.379E-009 N = 1.261 RS = 0.03594 BV = 21.57 + CJO = 5.149E-010 VJ = 0.8 M = 0.6 TT = 3.56E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2108UCB6 Spice Model v1.0W Last Revised 2019/07/12 *---------- DMP2109UVT Spice Model ---------- .SUBCKT DMP2109UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04529 RS 30 3 0.001 RG 20 2 6.52 CGS 2 3 4.137E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.08E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 31 KAPPA = 19.32 VTO = -1.027 .MODEL DCGD D CJO = 4.645E-010 VJ = 0.6 M = 0.7675 .MODEL DSUB D IS = 1E-009 N = 1.512 RS = 0.006293 BV = 28.46 + CJO = 1.181E-010 VJ = 0.6 M = 0.8 TT = 4.15E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2109UVT Spice Model v1.0J Last Revised 2018/08/28 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP2109UVTQ Spice Model ---------- .SUBCKT DMP2109UVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04529 RS 30 3 0.001 RG 20 2 6.52 CGS 2 3 4.137E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.08E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 31 KAPPA = 19.32 VTO = -1.027 .MODEL DCGD D CJO = 4.645E-010 VJ = 0.6 M = 0.7675 .MODEL DSUB D IS = 1E-009 N = 1.512 RS = 0.006293 BV = 28.46 + CJO = 1.181E-010 VJ = 0.6 M = 0.8 TT = 4.15E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2109UVTQ Spice Model v1.0J Last Revised 2018/08/28 *---------- DMP210DUDJ Spice Model ---------- .SUBCKT DMP210DUDJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.438 RS 30 3 0.001 RG 20 2 8.6 CGS 2 3 1.209E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 8E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.1751 KAPPA = 29.86 VTO = -0.7543 .MODEL DCGD D CJO = 7.994E-012 VJ = 0.6297 M = 0.3605 .MODEL DSUB D IS = 3.261E-007 N = 2.5 RS = 0.4415 BV = 22 CJO = 3.868E-012 VJ = 1 M = 0.3722 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP210DUDJ Spice Model v1.0 Last Revised 2012/4/27 *---------- DMP210DUFB4 Spice Model ---------- .SUBCKT DMP210DUFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.438 RS 30 3 0.001 RG 20 2 8.6 CGS 2 3 1.209E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 8E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.1751 KAPPA = 29.86 VTO = -0.7543 .MODEL DCGD D CJO = 7.994E-012 VJ = 0.6297 M = 0.3605 .MODEL DSUB D IS = 3.261E-007 N = 2.5 RS = 0.4415 BV = 22 CJO = 3.868E-012 VJ = 1 M = 0.3722 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP210DUFB4 Spice Model v1.0 Last Revised 2012/4/27 *---------- DMP2110U Spice Model ---------- .SUBCKT DMP2110U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2110U Spice Model v1.0M Last Revised 2018/2/2 *---------- DMP2110UFDBQ Spice Model ---------- .SUBCKT DMP2110UFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2110UFDBQ Spice Model v1.0M Last Revised 2020/2/2 *---------- DMP2110UQ Spice Model ---------- .SUBCKT DMP2110UQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2110UQ Spice Model v1.0M Last Revised 2020/2/2 *---------- DMP2110UVT Spice Model ---------- .SUBCKT DMP2110UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2110UVT Spice Model v1.0M Last Revised 2018/2/2 *---------- DMP2110UVT Spice Model ---------- .SUBCKT DMP2110UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2110UVT Spice Model v1.0M Last Revised 2018/2/2 *---------- DMP2110UVTQ Spice Model ---------- .SUBCKT DMP2110UVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2110UVTQ Spice Model v1.0M Last Revised 2019/2/2 *---------- DMP2110UW Spice Model ---------- .SUBCKT DMP2110UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04439 RS 30 3 0.001 RG 20 2 8.47 CGS 2 3 3.947E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.7E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 28.79 KAPPA = 19.32 VTO = -0.919 .MODEL DCGD D CJO = 4.315E-010 VJ = 0.6 M = 0.7569 .MODEL DSUB D IS = 1.86E-008 N = 1.276 RS = 0.06967 BV = 27 CJO = 7.361E-011 VJ = 0.6 M = 0.6276 TT = 4.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2110UW Spice Model v1.0M Last Revised 2018/2/2 *---------- DMP2120U Spice Model ---------- .SUBCKT DMP2120U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02949 RS 30 3 0.001 RG 20 2 38.24 CGS 2 3 4.347E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 17.07 KAPPA = 19.32 VTO = -1.013 .MODEL DCGD D CJO = 4.5E-010 VJ = 0.6 M = 0.6482 .MODEL DSUB D IS = 4.727E-010 N = 1.134 RS = 0.1077 BV = 22 CJO = 5.57E-011 VJ = 0.6 M = 0.6588 TT=3.7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2120U Spice Model v1.0M Last Revised 2017/4/18 *SRC=DMP2123L;DI_DMP2123L;MOSFETs P;Enh;20.0V 3.00A 0.123ohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP2123L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 57.4m RS 30 3 4.07m RG 20 2 50.0 CGS 2 3 342p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 966p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.80m VTO=-1.25 KP=44.2 .MODEL DCGD D (CJO=966p VJ=0.600 M=0.680 .MODEL DSUB D (IS=12.5n N=1.50 RS=0.170 BV=20.0 + CJO=230p VJ=0.800 M=0.420 TT=196n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMP2123LQ;DI_DMP2123LQ;MOSFETs P;Enh;20.0V 3.00A 0.123ohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP2123LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 57.4m RS 30 3 4.07m RG 20 2 50.0 CGS 2 3 342p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 966p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.80m VTO=-1.25 KP=44.2 .MODEL DCGD D (CJO=966p VJ=0.600 M=0.680 .MODEL DSUB D (IS=12.5n N=1.50 RS=0.170 BV=20.0 + CJO=230p VJ=0.800 M=0.420 TT=196n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMP2130L;DI_DMP2130L;MOSFETs P;Enh;20.0V 1.00A 0.125ohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP2130L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 58.4m RS 30 3 4.12m RG 20 2 150 CGS 2 3 342p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 966p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=-1.25 KP=44.2Meg .MODEL DCGD D (CJO=966p VJ=0.600 M=0.680 .MODEL DSUB D (IS=4.15n N=1.50 RS=0.510 BV=20.0 + CJO=230p VJ=0.800 M=0.420 TT=141n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMP2130LDM;DI_DMP2130LDM;MOSFETs P;Enh;20.0V 3.40A 80.0mohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP2130LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 37.0m RS 30 3 3.00m RG 20 2 44.1 CGS 2 3 345p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 937p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.53m VTO=-1.25 KP=21.9 .MODEL DCGD D (CJO=937p VJ=0.600 M=0.680 .MODEL DSUB D (IS=14.1n N=1.50 RS=0.150 BV=20.0 + CJO=224p VJ=0.800 M=0.420 TT=188n .MODEL DLIM D (IS=100U) .ENDS *---------- DMP213DUFA Spice Model ---------- .SUBCKT DMP213DUFA 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2 RS 30 3 0.001 RG 20 2 10 CGS 2 3 2.53E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 VTO = -1.05 + TOX = 1E-007 NSUB = 1E+015 KP = 0.635 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.5E-012 VJ = 0.5 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.682 RS = 0.3448 BV = 25 + CJO = 1.23E-011 VJ = 0.6 M = 0.3457 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1J Last Revised 2020/03/27 *---------- DMP2160U Spice Model ---------- .SUBCKT DMP2160U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2160U Spice Model v1.0 Last Revised 2011/6/14 *---------- DMP2160UFDB Spice Model ---------- .SUBCKT DMP2160UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2160UFDB Spice Model v1.0 Last Revised 2011/6/14 *---------- DMP2160UFDBQ Spice Model ---------- .SUBCKT DMP2160UFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2160UFDBQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP2160UW Spice Model ---------- .SUBCKT DMP2160UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2160UW Spice Model v1.0 Last Revised 2011/6/14 *---------- DMP2160UWQ Spice Model ---------- .SUBCKT DMP2160UWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04586 RS 30 3 0.001 RG 20 2 72 CGS 2 3 5.078E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75 .MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329 .MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25 + CJO = 3.296E-011 VJ = 0.3087 M = 0.4639 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2160UWQ Spice Model v1.0 Last Revised 2015/06/10 *---------- DMP2165UW Spice Model ---------- .SUBCKT DMP2165UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03534 RS 30 3 0.001 RG 20 2 15.49 CGS 2 3 3.14E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.2E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 12.53 KAPPA = 19.32 VTO = -0.9607 .MODEL DCGD D CJO = 2.136E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.985E-009 N = 1.277 RS = 0.03769 BV = 27 CJO = 2.703E-010 VJ = 0.6 M = 0.6 TT = 4.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2165UW Spice Model v1.0M Last Revised 2017/12/28 *---------- DMP2170U Spice Model ---------- .SUBCKT DMP2170U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03401 RS 30 3 0.001 RG 20 2 16.19 CGS 2 3 2.663E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 13.29 KAPPA = 19.32 VTO = -1.265 .MODEL DCGD D CJO = 2.367E-010 VJ = 0.1307 M = 0.4276 .MODEL DSUB D IS = 8.156E-010 N = 1.261 RS = 0.05931 BV = 27 CJO = 5.561E-011 VJ = 0.1742 M = 0.4317 TT=2.7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2170U Spice Model v1.0M Last Revised 2016/6/15 *---------- DMP21D0UFB Spice Model ---------- .SUBCKT DMP21D0UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2 RS 30 3 0.001 RG 20 2 500 CGS 2 3 7.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.857 KAPPA = 9.123 VTO = -0.8248 .MODEL DCGD D CJO = 3.857E-011 VJ = 0.2478 M = 0.3502 .MODEL DSUB D IS = 9.827E-009 N = 1.492 RS = 0.8393 BV = 25 CJO = 1.95E-011 VJ = 0.2986 M = 0.379 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D0UFB Spice Model v1.0 Last Revised 2012/1/13 *---------- DMP21D0UFB4 Spice Model ---------- .SUBCKT DMP21D0UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1932 RS 30 3 0.001 RG 20 2 195 CGS 2 3 7.164E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 2.81 KAPPA = 19.32 VTO = -0.8259 .MODEL DCGD D CJO = 3.703E-011 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 5.741E-007 N = 2.108 RS = 0.5607 BV = 20 CJO = 1.599E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D0UFB4 Spice Model v1.0 Last Revised 2015/9/17 *---------- DMP21D0UFD Spice Model ---------- .SUBCKT DMP21D0UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2 RS 30 3 0.001 RG 20 2 500 CGS 2 3 7.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.857 KAPPA = 9.123 VTO = -0.8248 .MODEL DCGD D CJO = 3.857E-011 VJ = 0.2478 M = 0.3502 .MODEL DSUB D IS = 9.827E-009 N = 1.492 RS = 0.8393 BV = 25 CJO = 1.95E-011 VJ = 0.2986 M = 0.379 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D0UFD Spice Model v1.0 Last Revised 2012/1/13 *---------- DMP21D0UT Spice Model ---------- .SUBCKT DMP21D0UT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2 RS 30 3 0.001 RG 20 2 500 CGS 2 3 7.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.857 KAPPA = 9.123 VTO = -0.8248 .MODEL DCGD D CJO = 3.857E-011 VJ = 0.2478 M = 0.3502 .MODEL DSUB D IS = 9.827E-009 N = 1.492 RS = 0.8393 BV = 25 CJO = 1.95E-011 VJ = 0.2986 M = 0.379 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D0UT Spice Model v1.0 Last Revised 2012/1/13 *---------- DMP21D1UT Spice Model ---------- .SUBCKT DMP21D1UT 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.28 RS 30 3 0.001 RG 20 2 2.26 CGS 2 3 3.12E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 VTO = -0.66 + TOX = 1E-007 NSUB = 1E+014 KP = 2.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.52E-011 VJ = 0.5 M = 0.58 .MODEL DSUB D IS = 1.5E-009 N = 1.38 RS = 0.1248 BV = 25.16 + CJO = 3.83E-011 VJ = 0.6 M = 0.5507 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/26 *---------- DMP21D1UTQ Spice Model ---------- .SUBCKT DMP21D1UTQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.28 RS 30 3 0.001 RG 20 2 2.26 CGS 2 3 3.12E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 VTO = -0.66 + TOX = 1E-007 NSUB = 1E+014 KP = 2.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.52E-011 VJ = 0.5 M = 0.58 .MODEL DSUB D IS = 1.5E-009 N = 1.38 RS = 0.1248 BV = 25.16 + CJO = 3.83E-011 VJ = 0.6 M = 0.5507 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/26 *---------- DMP21D2UFA Spice Model ---------- .SUBCKT DMP21D2UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.3744 RS 30 3 0.104 RG 20 2 1.22 CGS 2 3 4.417E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.2E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 864 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 3.29 KAPPA = 16.32 VTO = -0.5046 .MODEL DCGD D CJO = 2.835E-011 VJ = 0.7177 M = 0.6 .MODEL DSUB D IS = 1.847E-005 N = 3.708 RS = 1.211E-009 BV = 24.48 + CJO = 1.124E-011 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D2UFA Spice Model v1.0W Last Revised 2019/07/15 *---------- DMP21D5UFB4 Spice Model ---------- .SUBCKT DMP21D5UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D5UFB4 Spice Model v1.0 Last Revised 2011/10/27 *---------- DMP21D5UFD Spice Model ---------- .SUBCKT DMP21D5UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D5UFD Spice Model v1.0 Last Revised 2012/11/28 *---------- DMP21D6UFB4 Spice Model ---------- .SUBCKT DMP21D6UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4438 RS 30 3 0.001 RG 20 2 351 CGS 2 3 4.728E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.479 KAPPA = 19.32 VTO = -0.8293 .MODEL DCGD D CJO = 2.973E-011 VJ = 0.7863 M = 0.6 .MODEL DSUB D IS = 1.085E-008 N = 1.536 RS = 1.529 BV = 23 CJO = 1.064E-011 VJ = 0.76 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D6UFB4 Spice Model v1.0M Last Revised 2018/8/15 *---------- DMP21D6UFD Spice Model ---------- .SUBCKT DMP21D6UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4438 RS 30 3 0.001 RG 20 2 351 CGS 2 3 4.728E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.479 KAPPA = 19.32 VTO = -0.8293 .MODEL DCGD D CJO = 2.973E-011 VJ = 0.7863 M = 0.6 .MODEL DSUB D IS = 1.085E-008 N = 1.536 RS = 1.529 BV = 23 CJO = 1.064E-011 VJ = 0.76 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D6UFD Spice Model v1.0M Last Revised 2017/12/15 *---------- DMP2200UDW Spice Model ---------- .SUBCKT DMP2200UDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1222 RS 30 3 0.001 RG 20 2 65 CGS 2 3 1.384E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 4.902 KAPPA = 49.86 VTO = -0.8622 .MODEL DCGD D CJO = 1.261E-010 VJ = 0.4 M = 0.4131 .MODEL DSUB D IS = 1.448E-009 N = 1.239 RS = 0.437 BV = 30 CJO = 1E-012 VJ = 0.2 M = 0.7859 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2200UDW Spice Model v1.0 Last Revised 2015/5/6 *---------- DMP2200UFCL Spice Model ---------- .SUBCKT DMP2200UFCL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1222 RS 30 3 0.001 RG 20 2 65 CGS 2 3 1.384E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 4.902 KAPPA = 49.86 VTO = -0.8622 .MODEL DCGD D CJO = 1.261E-010 VJ = 0.4 M = 0.4131 .MODEL DSUB D IS = 1.448E-009 N = 1.239 RS = 0.437 BV = 30 CJO = 1E-012 VJ = 0.2 M = 0.7859 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2200UFCL Spice Model v1.0 Last Revised 2015/5/6 *DIODES_INC_SPICE_MODEL DMP2215L *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=06Jan2012 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMP2215L 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 45E-3 RS 23 3 Rmod1 10E-3 RG 20 22 14 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 220E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 480E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.13 TOX=7.5E-8 NSUB=1E+16 KP=7.5 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 380E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.9E-12 N=1.02 RS=0.035 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL DMP2225L *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=18sep2013 *VERSION=2 *PINS 10=D 20=G 30=S .SUBCKT DMP2225L 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 45E-3 RS 23 3 Rmod1 10E-3 RG 20 22 14 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 220E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 480E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.13 TOX=7.5E-8 NSUB=1E+16 KP=7.5 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 380E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.9E-12 N=1.02 RS=0.035 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=DMP2240UDM;DI_DMP2240UDM;MOSFETs Enh;20.0V 2.00A 0.150ohms Diodes Inc MOSFET .MODEL DI_DMP2240UDM PMOS( LEVEL=1 VTO=1.00 KP=11.9u GAMMA=1.24 + PHI=.75 LAMBDA=514u RD=21.0m RS=21.0m + IS=1.00p PB=0.800 MJ=0.460 CBD=81.1p + CBS=97.4p CGSO=720n CGDO=600n CGBO=1.88u ) * -- Assumes default L=100U W=100U -- *---------- DMP2240UW Spice Model ---------- .SUBCKT DMP2240UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04586 RS 30 3 0.001 RG 20 2 72 CGS 2 3 5.078E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75 .MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329 .MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25 + CJO = 3.296E-011 VJ = 0.3087 M = 0.4639 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2240UW Spice Model v1.0 Last Revised 2015/06/10 *---------- DMP2240UWQ Spice Model ---------- .SUBCKT DMP2240UWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04586 RS 30 3 0.001 RG 20 2 72 CGS 2 3 5.078E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75 .MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329 .MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25 + CJO = 3.296E-011 VJ = 0.3087 M = 0.4639 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2240UWQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP22D3UFZ Spice Model ---------- .SUBCKT DMP22D3UFZ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.7743 RS 30 3 0.0001 RG 20 2 4.5 CGS 2 3 1.264E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.671E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 409.5 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+014 KP = 1 KAPPA = 0.2 VTO = -0.7364 .MODEL DCGD D CJO = 6.606E-012 VJ = 0.1546 M = 0.192 .MODEL DSUB D IS = 2.261E-009 N = 1.758 RS = 0.07111 BV = 31.39 + CJO = 7.676E-012 VJ = 0.9 M = 0.463 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/21 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP22D4UDA Spice Model ---------- .SUBCKT DMP22D4UDA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.6562 RS 30 3 0.001 RG 20 2 400 CGS 2 3 2.653E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 .MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 .MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP22D4UDA Spice Model v1.0 Last Revised 2012/11/30 *---------- DMP22D4UFA Spice Model ---------- .SUBCKT DMP22D4UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.6562 RS 30 3 0.001 RG 20 2 400 CGS 2 3 2.653E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 .MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 .MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 + BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP22D4UFA Spice Model v1.0 Last Revised 2012/11/30 *---------- DMP22D4UFO Spice Model ---------- .SUBCKT DMP22D4UFO 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.6562 RS 30 3 0.001 RG 20 2 400 CGS 2 3 2.653E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 .MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 .MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP22D4UFO Spice Model v1.0 Last Revised 2012/11/30 *---------- DMP22D5UDA Spice Model ---------- .SUBCKT DMP22D5UDA 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMP22D5UDA Diodes Spice Model v1.0J Last Revised 2022/01/31 *---------- DMP22D5UDJ Spice Model ---------- .SUBCKT DMP22D5UDJ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMP22D5UDJ Diodes Spice Model v1.0J Last Revised 2020/01/31 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP22D5UDR4 Spice Model ---------- *--------------------PMOS-------------------- .SUBCKT DMP22D5UDR4_P 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMP22D5UDR4_P Diodes Spice Model v1.0J Last Revised 2020/01/31 *---------- DMP22D5UFA Spice Model ---------- .SUBCKT DMP22D5UFA 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMP22D5UFA Diodes Spice Model v1.0J Last Revised 2023/01/31 *---------- DMP22D5UFB4 Spice Model ---------- .SUBCKT DMP22D5UFB4 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMP22D5UFB4 Diodes Spice Model v1.0J Last Revised 2022/01/31 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP22D5UFB4Q Spice Model ---------- .SUBCKT DMP22D5UFB4Q 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMP22D5UFB4Q Diodes Spice Model v1.0J Last Revised 2022/01/31 *---------- DMP22D5UFO Spice Model ---------- .SUBCKT DMP22D5UFO 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMP22D5UFO Diodes Spice Model v1.0J Last Revised 2020/01/31 *---------- DMP22D5UFZ Spice Model ---------- .SUBCKT DMP22D5UFZ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.75 RS 30 3 0.001 RG 20 2 3.36 CGS 2 3 1.61E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.44E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 1E+005 ETA = 0 VTO = -0.67 + TOX = 1E-007 NSUB = 1E+015 KP = 1.03 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.813E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1E-008 N = 1.329 RS = 1.273 BV = 29.92 + CJO = 8.821E-012 VJ = 0.6499 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS DMP22D5UFO Diodes Spice Model v1.0J Last Revised 2021/01/31 *---------- DMP22D6UFB4 Spice Model ---------- .SUBCKT DMP22D6UFB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.3476 RS 30 3 0.0001 RG 20 2 351.4 CGS 2 3 2.066E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.537E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 342.8 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+014 KP = 0.3589 KAPPA = 0.2 VTO = -0.4984 .MODEL DCGD D CJO = 1.522E-011 VJ = 0.5 M = 0.4583 .MODEL DSUB D IS = 4.709E-010 N = 1.66 RS = 0.158 BV = 26.56 + CJO = 5.135E-012 VJ = 0.6 M = 0.3986 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP22D6UFB4Q Spice Model ---------- .SUBCKT DMP22D6UFB4Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.3476 RS 30 3 0.0001 RG 20 2 351.4 CGS 2 3 2.066E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.537E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 342.8 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+014 KP = 0.3589 KAPPA = 0.2 VTO = -0.4984 .MODEL DCGD D CJO = 1.522E-011 VJ = 0.5 M = 0.4583 .MODEL DSUB D IS = 4.709E-010 N = 1.66 RS = 0.158 BV = 26.56 + CJO = 5.135E-012 VJ = 0.6 M = 0.3986 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP22M1UPSW Spice Model ---------- .SUBCKT DMP22M1UPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0008791 RS 30 3 0.0001 RG 20 2 2.51 CGS 2 3 1.5E-008 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.458E-008 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+015 KP = 386.2 KAPPA = 0.2 VTO = -1.215 .MODEL DCGD D CJO = 1.247E-008 VJ = 0.5 M = 0.6952 .MODEL DSUB D IS = 1.004E-008 N = 1.203 RS = 0.001079 BV = 27.64 + CJO = 2.871E-009 VJ = 0.6 M = 0.6757 XTI = 0 TT = 3.17E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/04 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP22M2UPS Spice Model ---------- .SUBCKT DMP22M2UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 3.44 CGS 2 3 9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-008 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 392.9 KAPPA = 52.83 VTO = -1.469 .MODEL DCGD D CJO = 1.143E-008 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 2.821E-009 N = 1.184 RS = 5.952E-009 BV = 22 CJO = 1.797E-009 VJ = 0.8 M = 0.6 TT=3.6E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP22M2UPS Spice Model v1.0 Last Revised 2016/9/16 *---------- DMP2305U Spice Model ---------- .SUBCKT DMP2305U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03653 RS 30 3 0.001 RG 20 2 23 CGS 2 3 6.954E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.385E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.44 KAPPA = 0.8442 VTO = -0.8978 .MODEL DCGD D CJO = 3.468E-010 VJ = 0.2064 M = 0.3945 .MODEL DSUB D IS = 4.536E-009 N = 1.339 RS = 0.05752 BV = 30 CJO = 2.406E-011 VJ = 1.677E-012 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2305U Spice Model v1.0 Last Revised 2011/6/20 *---------- DMP2305UVT Spice Model ---------- .SUBCKT DMP2305UVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03653 RS 30 3 0.001 RG 20 2 23 CGS 2 3 6.954E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.385E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.44 KAPPA = 0.8442 VTO = -0.8978 .MODEL DCGD D CJO = 3.468E-010 VJ = 0.2064 M = 0.3945 .MODEL DSUB D IS = 4.536E-009 N = 1.339 RS = 0.05752 BV = 30 CJO = 2.406E-011 VJ = 1.677E-012 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2305UVT Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP2541UCB9 Spice Model ---------- .SUBCKT DMP2541UCB9 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02055 RS 30 3 0.001 RG 20 2 12.1 CGS 2 3 5.531E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.42 KAPPA = 19.32 VTO = -0.9805 .MODEL DCGD D CJO = 1.25E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 1.338E-009 N = 1.242 RS = 0.02974 BV = 29 CJO = 8E-010 VJ = 0.8 M = 0.6 TT = 6.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2541UCB9 Spice Model v1.0M Last Revised 2018/3/19 *---------- DMP2541UCP9 Spice Model ---------- .SUBCKT DMP2541UCP9 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02055 RS 30 3 0.001 RG 20 2 12.1 CGS 2 3 5.531E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.42 KAPPA = 19.32 VTO = -0.9805 .MODEL DCGD D CJO = 1.25E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 1.338E-009 N = 1.242 RS = 0.02974 BV = 29 CJO = 8E-010 VJ = 0.8 M = 0.6 TT = 6.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2541UCP9 Spice Model v1.0M Last Revised 2018/3/19 *---------- DMP25H18DLFDE Spice Model ---------- .SUBCKT DMP25H18DLFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 9.589 RS 30 3 0.001 RG 20 2 13.33 CGS 2 3 7.775E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.1628 KAPPA = 19.32 VTO = -1.523 .MODEL DCGD D CJO = 7.161E-011 VJ = 0.6 M = 0.7774 .MODEL DSUB D IS = 3.284E-010 N = 1.445 RS = 0.08438 BV = 268 CJO = 9.098E-011 VJ = 0.6 M = 0.6 TT = 4.2E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP25H18DLFDE Spice Model v1.0M Last Revised 2017/1/9 *---------- DMP26M1UFG Spice Model ---------- .SUBCKT DMP26M1UFG 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0031 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 5E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.02E-008 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.99 + TOX = 1E-007 NSUB = 1E+014 KP = 300 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5E-009 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 6.7E-009 N = 1.11 RS = 0.004 BV = 26.23 + CJO = 1.568E-009 VJ = 0.7 M = 0.7807 XTI = 0 TT = 1.13E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/10/01 *---------- DMP26M1UPS Spice Model ---------- .SUBCKT DMP26M1UPS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0029 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 5E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.02E-008 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.99 + TOX = 1E-007 NSUB = 1E+014 KP = 250 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5E-009 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 1.37E-008 N = 1.15 RS = 0.0042 BV = 28.33 + CJO = 6.683E-010 VJ = 0.7 M = 0.5807 XTI = 0 TT = 2.728E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/09/30 *---------- DMP26M1UPSW Spice Model ---------- .SUBCKT DMP26M1UPSW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0031 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 5E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.02E-008 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.99 + TOX = 1E-007 NSUB = 1E+014 KP = 300 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5E-009 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 6.7E-009 N = 1.11 RS = 0.004 BV = 26.23 + CJO = 1.568E-009 VJ = 0.7 M = 0.7807 XTI = 0 TT = 1.13E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/10/01 *---------- DMP26M1UPSWQ Spice Model ---------- .SUBCKT DMP26M1UPSWQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0031 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 5E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.02E-008 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.99 + TOX = 1E-007 NSUB = 1E+014 KP = 300 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5E-009 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 6.7E-009 N = 1.11 RS = 0.004 BV = 26.23 + CJO = 1.568E-009 VJ = 0.7 M = 0.7807 XTI = 0 TT = 1.13E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/10/01 *---------- DMP26M7UFG Spice Model ---------- .SUBCKT DMP26M7UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001238 RS 30 3 0.001 RG 20 2 3.74 CGS 2 3 5.072E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 175.7 KAPPA = 109 VTO = -0.848 .MODEL DCGD D CJO = 5.158E-009 VJ = 0.1101 M = 0.4567 .MODEL DSUB D IS = 4.484E-008 N = 1.181 RS = 0.006778 + BV = 30 CJO = 6.249E-010 VJ = 0.1841 M = 0.4836 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP26M7UFG Spice Model v1.0 Last Revised 2014/09/10 *---------- DMP27M1UPSW Spice Model ---------- .SUBCKT DMP27M1UPSW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0024 RS 30 3 0.001 RG 20 2 2.39 CGS 2 3 4.28E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -1.23 + TOX = 1E-007 NSUB = 1E+014 KP = 225 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.4E-009 VJ = 0.7 M = 0.8 .MODEL DSUB D IS = 1.7E-009 N = 1.15 RS = 0.0022 BV = 28.22 + CJO = 6.283E-010 VJ = 0.65 M = 0.75 XTI = 0 TT = 1.03E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/02/18 *---------- DMP27M1UPSWQ Spice Model ---------- .SUBCKT DMP27M1UPSWQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0024 RS 30 3 0.001 RG 20 2 2.39 CGS 2 3 4.28E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -1.23 + TOX = 1E-007 NSUB = 1E+014 KP = 225 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.4E-009 VJ = 0.7 M = 0.8 .MODEL DSUB D IS = 1.7E-009 N = 1.15 RS = 0.0022 BV = 28.22 + CJO = 6.283E-010 VJ = 0.65 M = 0.75 XTI = 0 TT = 1.03E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2024/02/26 *---------- DMP2900UDW Spice Model ---------- .SUBCKT DMP2900UDW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.32 RS 30 3 0.001 RG 20 2 707.1 CGS 2 3 6.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.52E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.96 + TOX = 1E-007 NSUB = 1E+014 KP = 3.05 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3E-011 VJ = 0.6 M = 0.42 .MODEL DSUB D IS = 4.3E-010 N = 1.35 RS = 0.115 BV = 32.21 + CJO = 2.23E-011 VJ = 0.7 M = 0.5207 XTI = 0 TT = 2.728E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/08/03 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP2900UDWQ Spice Model ---------- .SUBCKT DMP2900UDWQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.32 RS 30 3 0.001 RG 20 2 707.1 CGS 2 3 6.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.52E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.96 + TOX = 1E-007 NSUB = 1E+014 KP = 3.05 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3E-011 VJ = 0.6 M = 0.42 .MODEL DSUB D IS = 4.3E-010 N = 1.35 RS = 0.115 BV = 32.21 + CJO = 2.23E-011 VJ = 0.7 M = 0.5207 XTI = 0 TT = 2.728E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/08/03 *---------- DMP2900UFB Spice Model ---------- .SUBCKT DMP2900UFB 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.32 RS 30 3 0.001 RG 20 2 707.1 CGS 2 3 6.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.52E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.96 + TOX = 1E-007 NSUB = 1E+014 KP = 3.05 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3E-011 VJ = 0.6 M = 0.42 .MODEL DSUB D IS = 4.3E-010 N = 1.35 RS = 0.115 BV = 32.21 + CJO = 2.23E-011 VJ = 0.7 M = 0.5207 XTI = 0 TT = 2.728E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/08/03 *---------- DMP2900UFBQ Spice Model ---------- .SUBCKT DMP2900UFBQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.32 RS 30 3 0.001 RG 20 2 707.1 CGS 2 3 6.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.52E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.96 + TOX = 1E-007 NSUB = 1E+014 KP = 3.05 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3E-011 VJ = 0.6 M = 0.42 .MODEL DSUB D IS = 4.3E-010 N = 1.35 RS = 0.115 BV = 32.21 + CJO = 2.23E-011 VJ = 0.7 M = 0.5207 XTI = 0 TT = 2.728E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/08/03 *---------- DMP2900UT Spice Model ---------- .SUBCKT DMP2900UT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2900UT Spice Model v1.0J Last Revised 2019/01/26 *---------- DMP2900UTQ Spice Model ---------- .SUBCKT DMP2900UTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2900UTQ Spice Model v1.0J Last Revised 2023/01/26 *---------- DMP2900UV Spice Model ---------- .SUBCKT DMP2900UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2900UV Spice Model v1.0J Last Revised 2018/01/26 *---------- DMP2900UVQ Spice Model ---------- .SUBCKT DMP2900UVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2900UVQ Spice Model v1.0J Last Revised 2022/01/26 *---------- DMP2900UW Spice Model ---------- .SUBCKT DMP2900UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2900UW Spice Model v1.0J Last Revised 2018/01/26 *---------- DMP2900UW Spice Model ---------- .SUBCKT DMP2900UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.34 RS 30 3 0.001 RG 20 2 1544 CGS 2 3 4.762E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.97E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.23 KAPPA = 19.32 VTO = -0.8898 .MODEL DCGD D CJO = 8.302E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 5.467E-009 N = 1.786 RS = 0.09228 BV = 34.28 + CJO = 3.728E-011 VJ = 0.8 M = 0.6 TT = 5.3E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2900UW Spice Model v1.0J Last Revised 2018/01/26 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP2900UWQ Spice Model ---------- .SUBCKT DMP2900UWQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.32 RS 30 3 0.001 RG 20 2 707.1 CGS 2 3 6.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.52E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.96 + TOX = 1E-007 NSUB = 1E+014 KP = 3.05 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3E-011 VJ = 0.6 M = 0.42 .MODEL DSUB D IS = 4.3E-010 N = 1.35 RS = 0.115 BV = 32.21 + CJO = 2.23E-011 VJ = 0.7 M = 0.5207 XTI = 0 TT = 2.728E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/08/03 *---------- DMP3004SSS Spice Model ---------- .SUBCKT DMP3004SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0012 RS 30 3 0.001 RG 20 2 5.35 CGS 2 3 7.464E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 160 KAPPA = 19.32 VTO = -2.55 .MODEL DCGD D CJO = 2.762E-009 VJ = 0.2072 M = 0.2244 .MODEL DSUB D IS = 2.229E-010 N = 1.175 RS = 0.001978 BV = 31.12 + CJO = 1.601E-009 VJ = 0.8 M = 0.6 TT=1.55E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3004SSS Spice Model v1.0M Last Revised 2018/05/18 *---------- DMP3006LPSW Spice Model ---------- .SUBCKT DMP3006LPSW D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0025 RS 30 3 0.0001 RG 20 2 6.27 CGS 2 3 5.262E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.535E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+016 KP = 63 KAPPA = 0.2 VTO = -2.15 .MODEL DCGD D CJO = 2.21E-009 VJ = 0.5 M = 0.4411 .MODEL DSUB D IS = 3.7E-009 N = 1.366 RS = 0.001182 + BV = 42.16 CJO = 8E-010 VJ = 0.6 M = 0.6274 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP3006LPSWQ Spice Model ---------- .SUBCKT DMP3006LPSWQ D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0025 RS 30 3 0.0001 RG 20 2 6.27 CGS 2 3 5.262E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.535E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+016 KP = 63 KAPPA = 0.2 VTO = -2.15 .MODEL DCGD D CJO = 2.21E-009 VJ = 0.5 M = 0.4411 .MODEL DSUB D IS = 3.7E-009 N = 1.366 RS = 0.001182 + BV = 42.16 CJO = 8E-010 VJ = 0.6 M = 0.6274 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP3007LK3 Spice Model ---------- .SUBCKT DMP3007LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0036 RS 30 3 1E-006 RG 20 2 22.8 CGS 2 3 3.409E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 100 KAPPA = 19.32 VTO = -2.1 .MODEL DCGD D CJO = 9.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.21E-009 N = 1.325 RS = 0.001807 BV = 37.39 + CJO = 1.423E-009 VJ = 0.6 M = 0.6 TT = 9.51E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3007LK3 Spice Model v1.0J Last Revised 2019/02/22 *---------- DMP3007LK3Q Spice Model ---------- .SUBCKT DMP3007LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0036 RS 30 3 1E-006 RG 20 2 22.8 CGS 2 3 3.409E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 100 KAPPA = 19.32 VTO = -2.1 .MODEL DCGD D CJO = 9.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.21E-009 N = 1.325 RS = 0.001807 BV = 37.39 + CJO = 1.423E-009 VJ = 0.6 M = 0.6 TT = 9.51E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3007LK3Q Spice Model v1.0J Last Revised 2019/02/22 *---------- DMP3007LSS Spice Model ---------- .SUBCKT DMP3007LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001386 RS 30 3 0.001 RG 20 2 22.8 CGS 2 3 2.969E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 98.34 KAPPA = 19.32 VTO = -2.316 .MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.186E-010 N = 1.188 RS = 4.441E-010 BV = 36 CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 9.51E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3007LSS Spice Model v1.0M Last Revised 2018/7/7 *---------- DMP3007SCG Spice Model ---------- .SUBCKT DMP3007SCG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001386 RS 30 3 0.001 RG 20 2 22.8 CGS 2 3 2.969E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 98.34 KAPPA = 19.32 VTO = -2.316 .MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.186E-010 N = 1.188 RS = 4.441E-010 BV = 36 CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 9.51E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3007SCG Spice Model v1.0M Last Revised 2016/9/7 *---------- DMP3007SCGQ Spice Model ---------- .SUBCKT DMP3007SCGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001386 RS 30 3 0.001 RG 20 2 22.8 CGS 2 3 2.969E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 98.34 KAPPA = 19.32 VTO = -2.316 .MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.186E-010 N = 1.188 RS = 4.441E-010 BV = 36 CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 9.51E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3007SCGQ Spice Model v1.0M Last Revised 2016/9/7 *---------- DMP3007SFG Spice Model ---------- .SUBCKT DMP3007SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001386 RS 30 3 0.001 RG 20 2 22.8 CGS 2 3 2.969E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 98.34 KAPPA = 19.32 VTO = -2.316 .MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.186E-010 N = 1.188 RS = 4.441E-010 BV = 36 CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 9.51E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3007SFG Spice Model v1.0M Last Revised 2016/9/7 *---------- DMP3007SPS Spice Model ---------- .SUBCKT DMP3007SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001386 RS 30 3 0.001 RG 20 2 22.8 CGS 2 3 2.969E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 98.34 KAPPA = 19.32 VTO = -2.316 .MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.186E-010 N = 1.188 RS = 4.441E-010 BV = 36 CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 9.51E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3007SPS Spice Model v1.0M Last Revised 2016/9/7 *---------- DMP3007SPSQ Spice Model ---------- .SUBCKT DMP3007SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001386 RS 30 3 0.001 RG 20 2 22.8 CGS 2 3 2.969E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 98.34 KAPPA = 19.32 VTO = -2.316 .MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.186E-010 N = 1.188 RS = 4.441E-010 BV = 36 CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 9.51E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3007SPSQ Spice Model v1.0M Last Revised 2019/7/23 *---------- DMP3008SFG Spice Model ---------- .SUBCKT DMP3008SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.008417 RS 30 3 0.001 RG 20 2 6.37 CGS 2 3 2.09E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 38.15 KAPPA = 19.32 VTO = -2.025 .MODEL DCGD D CJO = 1E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.251E-010 N = 1.261 RS = 0.007736 BV = 33 CJO = 1.038E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3008SFG Spice Model v1.0M Last Revised 2018/1/25 *---------- DMP3008SFGQ Spice Model ---------- .SUBCKT DMP3008SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.008417 RS 30 3 0.001 RG 20 2 6.37 CGS 2 3 2.09E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 38.15 KAPPA = 19.32 VTO = -2.025 .MODEL DCGD D CJO = 1E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.251E-010 N = 1.261 RS = 0.007736 BV = 33 CJO = 1.038E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3008SFGQ Spice Model v1.0M Last Revised 2018/1/25 *---------- DMP3010LK3 Spice Model ---------- .SUBCKT DMP3010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002936 RS 30 3 0.001 RG 20 2 1.28 CGS 2 3 5.724E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 .MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 .MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 + BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3010LK3 Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP3010LPS Spice Model ---------- .SUBCKT DMP3010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002936 RS 30 3 0.001 RG 20 2 1.28 CGS 2 3 5.724E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 .MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 .MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 + BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3010LPS Spice Model v1.0 Last Revised 2014/09/10 *---------- DMP3010LPSQ Spice Model ---------- .SUBCKT DMP3010LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002936 RS 30 3 0.001 RG 20 2 1.28 CGS 2 3 5.724E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 .MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 .MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 + BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3010LPSQ Spice Model v1.0 Last Revised 2018/2/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP3011SFK Spice Model ---------- .SUBCKT DMP3011SFK 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.98 CGS 2 3 2.18E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.65E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 58 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.333E-009 VJ = 0.6 M = 0.45 .MODEL DSUB D IS = 3.8E-009 N = 1.44 RS = 0.0007 BV = 37.82 + CJO = 2.803E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 9.28E-009 .MODEL DLIM D + IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3011SFVW Spice Model ---------- .SUBCKT DMP3011SFVW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.98 CGS 2 3 2.18E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.65E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 58 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.333E-009 VJ = 0.6 M = 0.45 .MODEL DSUB D IS = 3.8E-009 N = 1.44 RS = 0.0007 BV = 37.82 + CJO = 2.803E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 9.28E-009 .MODEL DLIM D + IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3011SFVWQ Spice Model ---------- .SUBCKT DMP3011SFVWQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.98 CGS 2 3 2.18E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.65E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 58 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.333E-009 VJ = 0.6 M = 0.45 .MODEL DSUB D IS = 3.8E-009 N = 1.44 RS = 0.0007 BV = 37.82 + CJO = 2.803E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 9.28E-009 .MODEL DLIM D + IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3011SPDW Spice Model ---------- .SUBCKT DMP3011SPDW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.98 CGS 2 3 2.18E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.65E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 58 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.333E-009 VJ = 0.6 M = 0.45 .MODEL DSUB D IS = 3.8E-009 N = 1.44 RS = 0.0007 BV = 37.82 + CJO = 2.803E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 9.28E-009 .MODEL DLIM D + IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3011SPSW Spice Model ---------- .SUBCKT DMP3011SPSW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.98 CGS 2 3 2.18E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.65E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 58 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.333E-009 VJ = 0.6 M = 0.45 .MODEL DSUB D IS = 3.8E-009 N = 1.44 RS = 0.0007 BV = 37.82 + CJO = 2.803E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 9.28E-009 .MODEL DLIM D + IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3011SSS Spice Model ---------- .SUBCKT DMP3011SSS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.98 CGS 2 3 2.18E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.65E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 58 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.333E-009 VJ = 0.6 M = 0.45 .MODEL DSUB D IS = 3.8E-009 N = 1.44 RS = 0.0007 BV = 37.82 + CJO = 2.803E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 9.28E-009 .MODEL DLIM D + IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3012LPS Spice Model ---------- .SUBCKT DMP3012LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002936 RS 30 3 0.001 RG 20 2 1.28 CGS 2 3 5.724E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 .MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 .MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 + BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3012LPS Spice Model v1.0 Last Revised 2014/09/10 *---------- DMP3012SPSW Spice Model ---------- .SUBCKT DMP3012SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002443 RS 30 3 0.0001 RG 20 2 5.84 CGS 2 3 5.701E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.889E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+016 KP = 91.77 KAPPA = 0.2 VTO = -2.617 .MODEL DCGD D CJO = 2.584E-009 VJ = 0.5 M = 0.4504 .MODEL DSUB D IS = 3.692E-009 N = 1.365 RS = 0.0006242 BV = 40.12 + CJO = 7.545E-010 VJ = 0.6 M = 0.5786 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/27 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DM3013SFK Spice Model ---------- .SUBCKT DMP3013SFK 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.008 RS 30 3 0.001 RG 20 2 23.13 CGS 2 3 1.537E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.58E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 + VTO = -1.881 + TOX = 1E-007 NSUB = 1E+014 KP = 60 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.928E-010 VJ = 0.5413 M = 0.35 .MODEL DSUB D IS = 1.489E-010 N = 1.205 RS = 0.0027 BV = 32.89 + CJO = 2.501E-010 VJ = 0.6 M = 0.4137 TT = 2.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/09/09 *---------- DMP3014SFDE Spice Model ---------- .SUBCKT DMP3014SFDE 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006028 RS 30 3 0.0001 RG 20 2 27.41 CGS 2 3 9.338E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 287.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+014 KP = 30.95 KAPPA = 0.2 VTO = -2.323 .MODEL DCGD D CJO = 3.453E-010 VJ = 0.6979 M = 0.35 .MODEL DSUB D IS = 1.524E-009 N = 1.422 RS = 4.441E-010 BV = 34.78 + CJO = 2.353E-010 VJ = 0.6 M = 0.4853 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/04/01 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP3015LSS Spice Model ---------- .SUBCKT DMP3015LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005144 RS 30 3 0.001 RG 20 2 2 CGS 2 3 2.486E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 2.95E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 610.4 VMAX = 1E+006 KP = 57.85 ETA = 0.01628 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 20.51 VTO = -2.177 .MODEL DCGD D CJO = 1.305E-009 VJ = 0.3167 M = 0.312 .MODEL DSUB D IS = 2.366E-010 N = 1.216 RS = 0.002639 BV = 35 CJO = 8.298E-011 VJ = 0.6 M = 0.0929 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3015LSS Spice Model v1.2 Last Revised 2011/4/22 *---------- DMP3015LSSQ Spice Model ---------- .SUBCKT DMP3015LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005144 RS 30 3 0.001 RG 20 2 2 CGS 2 3 2.486E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 2.95E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 610.4 VMAX = 1E+006 KP = 57.85 ETA = 0.01628 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 20.51 VTO = -2.177 .MODEL DCGD D CJO = 1.305E-009 VJ = 0.3167 M = 0.312 .MODEL DSUB D IS = 2.366E-010 N = 1.216 RS = 0.002639 BV = 35 CJO = 8.298E-011 VJ = 0.6 M = 0.0929 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3015LSSQ Spice Model v1.2 Last Revised 2018/2/1 *---------- DMP3017SFG Spice Model ---------- .SUBCKT DMP3017SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005039 RS 30 3 0.001 RG 20 2 8.36 CGS 2 3 1.93E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 46.32 KAPPA = 49.86 VTO = -2.2 .MODEL DCGD D CJO = 1.115E-009 VJ = 0.6515 M = 0.3641 .MODEL DSUB D IS = 4.862E-012 N = 1.048 RS = 0.005212 BV = 50 CJO = 7.568E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3017SFG Spice Model v1.0 Last Revised 2015/3/26 *---------- DMP3017SFGQ Spice Model ---------- .SUBCKT DMP3017SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005039 RS 30 3 0.001 RG 20 2 8.36 CGS 2 3 1.93E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 46.32 KAPPA = 49.86 VTO = -2.2 .MODEL DCGD D CJO = 1.115E-009 VJ = 0.6515 M = 0.3641 .MODEL DSUB D IS = 4.862E-012 N = 1.048 RS = 0.005212 BV = 50 CJO = 7.568E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3017SFGQ Spice Model v1.0 Last Revised 2015/9/9 *---------- DMP3017SFK Spice Model ---------- .SUBCKT DMP3017SFK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005039 RS 30 3 0.001 RG 20 2 8.36 CGS 2 3 1.93E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 46.32 KAPPA = 49.86 VTO = -2.2 .MODEL DCGD D CJO = 1.115E-009 VJ = 0.6515 M = 0.3641 .MODEL DSUB D IS = 4.862E-012 N = 1.048 RS = 0.005212 BV = 50 CJO = 7.568E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3017SFK Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP3017SFV Spice Model ---------- .SUBCKT DMP3017SFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005039 RS 30 3 0.001 RG 20 2 8.36 CGS 2 3 1.93E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 46.32 KAPPA = 49.86 VTO = -2.2 .MODEL DCGD D CJO = 1.115E-009 VJ = 0.6515 M = 0.3641 .MODEL DSUB D IS = 4.862E-012 N = 1.048 RS = 0.005212 BV = 50 CJO = 7.568E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3017SFV Spice Model v1.0 Last Revised 2015/3/26 *---------- DM3018SFVQ Spice Model ---------- .SUBCKT DMP3018SFVQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0063 RS 30 3 0.001 RG 20 2 24 CGS 2 3 2.012E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.07E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 750 VMAX = 1E+005 ETA = 0 + VTO = -2.639 TOX = 1E-007 NSUB = 1E+014 KP = 53 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.703E-009 VJ = 0.7204 M = 0.4693 .MODEL DSUB D IS = 2.304E-010 N = 1.252 RS = 0.0009438 BV = 32.37 + CJO = 2.222E-010 VJ = 0.6155 M = 0.7232 TT = 2.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/09/09 *---------- DMP3020LSS Spice Model ---------- .SUBCKT DMP3020LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.008417 RS 30 3 0.001 RG 20 2 6.37 CGS 2 3 2.09E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 38.15 KAPPA = 19.32 VTO = -2.025 .MODEL DCGD D CJO = 1E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.251E-010 N = 1.261 RS = 0.007736 BV = 33 CJO = 1.038E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3020LSS Spice Model v1.0M Last Revised 2018/1/25 *---------- DMP3021SFVW Spice Model ---------- .SUBCKT DMP3021SFVW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.001 RG 20 2 3.23 CGS 2 3 1.58E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.21E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.35 + TOX = 1E-007 NSUB = 1E+014 KP = 45 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.525E-010 VJ = 0.8 M = 0.48 .MODEL DSUB D IS = 5.2E-009 N = 1.45 RS = 0.0015 BV = 36.29 + CJO = 2.203E-010 VJ = 0.6 M = 0.5207 XTI = 0 TT = 7.45E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3021SFVWQ Spice Model ---------- .SUBCKT DMP3021SFVWQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.001 RG 20 2 3.23 CGS 2 3 1.58E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.21E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.35 + TOX = 1E-007 NSUB = 1E+014 KP = 45 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.525E-010 VJ = 0.8 M = 0.48 .MODEL DSUB D IS = 5.2E-009 N = 1.45 RS = 0.0015 BV = 36.29 + CJO = 2.203E-010 VJ = 0.6 M = 0.5207 XTI = 0 TT = 7.45E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3021SPDW Spice Model ---------- .SUBCKT DMP3021SPDW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.001 RG 20 2 3.23 CGS 2 3 1.58E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.21E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.35 + TOX = 1E-007 NSUB = 1E+014 KP = 45 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.525E-010 VJ = 0.8 M = 0.48 .MODEL DSUB D IS = 5.2E-009 N = 1.45 RS = 0.0015 BV = 36.29 + CJO = 2.203E-010 VJ = 0.6 M = 0.5207 XTI = 0 TT = 7.45E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3021SPSW Spice Model ---------- .SUBCKT DMP3021SPSW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.001 RG 20 2 3.23 CGS 2 3 1.58E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.21E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.35 + TOX = 1E-007 NSUB = 1E+014 KP = 45 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.525E-010 VJ = 0.8 M = 0.48 .MODEL DSUB D IS = 5.2E-009 N = 1.45 RS = 0.0015 BV = 36.29 + CJO = 2.203E-010 VJ = 0.6 M = 0.5207 XTI = 0 TT = 7.45E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3021SSS Spice Model ---------- .SUBCKT DMP3021SSS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.001 RG 20 2 3.23 CGS 2 3 1.58E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.21E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.35 + TOX = 1E-007 NSUB = 1E+014 KP = 45 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.525E-010 VJ = 0.8 M = 0.48 .MODEL DSUB D IS = 5.2E-009 N = 1.45 RS = 0.0015 BV = 36.29 + CJO = 2.203E-010 VJ = 0.6 M = 0.5207 XTI = 0 TT = 7.45E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/25 *---------- DMP3025SFDF Spice Model ---------- .SUBCKT DMP3025SFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0094 RS 30 3 0.0001 RG 20 2 27.81 CGS 2 3 9.856E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.79E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 41.17 KAPPA = 0.2 VTO = -2.406 .MODEL DCGD D CJO = 2.9E-010 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1.09E-009 N = 1.385 RS = 0.001898 BV = 34.98 + CJO = 2.59E-010 VJ = 0.6 M = 0.4385 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/04/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP3026SFDE Spice Model ---------- .SUBCKT DMP3026SFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.009697 RS 30 3 0.001 RG 20 2 15.56 CGS 2 3 1.185E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 21.21 KAPPA = 19.32 VTO = -2.826 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.381E-010 N = 1.297 RS = 0.003867 BV = 38 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.11E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3026SFDE Spice Model v1.0M Last Revised 2018/2/1 *---------- DMP3026SFDF Spice Model ---------- .SUBCKT DMP3026SFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.009697 RS 30 3 0.001 RG 20 2 15.56 CGS 2 3 1.185E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 21.21 KAPPA = 19.32 VTO = -2.826 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.381E-010 N = 1.297 RS = 0.003867 BV = 38 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.11E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3026SFDF Spice Model v1.0M Last Revised 2016/9/5 *---------- DMP3026SFDF Spice Model ---------- .SUBCKT DMP3026SFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.009697 RS 30 3 0.001 RG 20 2 15.56 CGS 2 3 1.185E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 21.21 KAPPA = 19.32 VTO = -2.826 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.381E-010 N = 1.297 RS = 0.003867 BV = 38 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.11E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3026SFDF Spice Model v1.0M Last Revised 2016/9/5 *---------- DMP3027LFDE Spice Model ---------- .SUBCKT DMP3027LFDE 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01062 RS 30 3 0.0001 RG 20 2 4.81 CGS 2 3 1.014E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.57E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 32.89 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 18.32 KAPPA = 0.2 VTO = -2.219 .MODEL DCGD D CJO = 5.829E-010 VJ = 0.5764 M = 0.484 .MODEL DSUB D IS = 3.26E-009 N = 1.48 RS = 0.002822 BV = 38.36 + CJO = 1.985E-010 VJ = 0.6 M = 0.6369 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/04 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP3027LFDEQ Spice Model ---------- .SUBCKT DMP3027LFDEQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01062 RS 30 3 0.0001 RG 20 2 4.81 CGS 2 3 1.014E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.57E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 32.89 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 18.32 KAPPA = 0.2 VTO = -2.219 .MODEL DCGD D CJO = 5.829E-010 VJ = 0.5764 M = 0.484 .MODEL DSUB D IS = 3.26E-009 N = 1.48 RS = 0.002822 BV = 38.36 + CJO = 1.985E-010 VJ = 0.6 M = 0.6369 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/04 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP3028LFDE Spice Model ---------- .SUBCKT DMP3028LFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3028LFDE Spice Model v1.0 Last Revised 2013/11/12 *---------- DMP3028LFDEQ Spice Model ---------- .SUBCKT DMP3028LFDEQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3028LFDEQ Spice Model v1.0 Last Revised 2013/11/12 *---------- DMP3028LK3 Spice Model ---------- .SUBCKT DMP3028LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3028LK3 Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP3028LK3Q Spice Model ---------- .SUBCKT DMP3028LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3028LK3Q Spice Model v1.0 Last Revised 2016/8/31 *---------- DMP3028LPSQ Spice Model ---------- .SUBCKT DMP3028LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3028LPSQ Spice Model v1.0 Last Revised 2017/10/13 *---------- DMP3028LPSW Spice Model ---------- .SUBCKT DMP3028LPSW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.015 RS 30 3 0.001 RG 20 2 11.66 CGS 2 3 1.28E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.41E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.35 + TOX = 1E-007 NSUB = 1E+014 KP = 34 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.825E-010 VJ = 0.5 M = 0.48 .MODEL DSUB D IS = 2E-010 N = 1.24 RS = 0.0055 BV = 35.28 + CJO = 1.503E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 5.15E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/03/12 *---------- DMP3028LSD Spice Model ---------- .SUBCKT DMP3028LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3028LSD Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP3030SN Spice Model ---------- .SUBCKT DMP3030SN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1167 RS 30 3 0.001 RG 20 2 51 CGS 2 3 1.103E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.68 KAPPA = 13.91 VTO = -2.049 .MODEL DCGD D CJO = 2.109E-010 VJ = 0.6052 M = 0.5407 .MODEL DSUB D IS = 2.361E-010 N = 1.408 RS = 0.01768 + BV = 50 CJO = 1.912E-010 VJ = 0.6317 M = 0.3668 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3030SN Spice Model v2.0 Last Revised 2013/11/0 *SRC=DMP3035LSS;DI_DMP3035LSS;MOSFETs P;Enh;30.0V 12.0A 35.0mohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP3035LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 15.6m RS 30 3 1.87m RG 20 2 76.7 CGS 2 3 179p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 347p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=450u VTO=-2.00 KP=23.3 .MODEL DCGD D (CJO=347p VJ=0.600 M=0.680 .MODEL DSUB D (IS=49.8n N=1.50 RS=29.2m BV=30.0 + CJO=92.5p VJ=0.800 M=0.420 TT=196n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMP3035SFG;DI_DMP3035SFG;MOSFETs P;Enh;30.0V 12.0A 35.0mohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP3035SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 15.6m RS 30 3 1.87m RG 20 2 76.7 CGS 2 3 179p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 347p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=450u VTO=-2.00 KP=23.3 .MODEL DCGD D (CJO=347p VJ=0.600 M=0.680 .MODEL DSUB D (IS=49.8n N=1.50 RS=29.2m BV=30.0 + CJO=92.5p VJ=0.800 M=0.420 TT=196n .MODEL DLIM D (IS=100U) .ENDS *---------- DMP3036SFG Spice Model ---------- .SUBCKT DMP3036SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01231 RS 30 3 0.001 RG 20 2 6.83 CGS 2 3 1.465E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.556E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 164.9 VMAX = 1.945E+005 KP = 39.94 + ETA = 0.005129 TOX = 6E-008 NSUB = 1.104E+016 KAPPA = 3.689 VTO = -2.072 .MODEL DCGD D CJO = 7.47E-010 VJ = 0.518 M = 0.3662 .MODEL DSUB D IS = 2.364E-010 N = 1.296 RS = 0.007836 BV = 33 +CJO = 9.148E-011 VJ = 0.644 M = 0.663 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3036SFG Spice Model v1.0 Last Revised 2017/7/27 *---------- DMP3036SFV Spice Model ---------- .SUBCKT DMP3036SFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01231 RS 30 3 0.001 RG 20 2 6.83 CGS 2 3 1.465E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.556E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 164.9 VMAX = 1.945E+005 KP = 39.94 + ETA = 0.005129 TOX = 6E-008 NSUB = 1.104E+016 KAPPA = 3.689 VTO = -2.072 .MODEL DCGD D CJO = 7.47E-010 VJ = 0.518 M = 0.3662 .MODEL DSUB D IS = 2.364E-010 N = 1.296 RS = 0.007836 BV = 33 +CJO = 9.148E-011 VJ = 0.644 M = 0.663 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3036SFV Spice Model v1.0 Last Revised 2017/7/27 *---------- DMP3036SFVQ Spice Model ---------- .SUBCKT DMP3036SFVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01231 RS 30 3 0.001 RG 20 2 6.83 CGS 2 3 1.465E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.556E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 164.9 VMAX = 1.945E+005 KP = 39.94 + ETA = 0.005129 TOX = 6E-008 NSUB = 1.104E+016 KAPPA = 3.689 VTO = -2.072 .MODEL DCGD D CJO = 7.47E-010 VJ = 0.518 M = 0.3662 .MODEL DSUB D IS = 2.364E-010 N = 1.296 RS = 0.007836 BV = 33 +CJO = 9.148E-011 VJ = 0.644 M = 0.663 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3036SFVQ Spice Model v1.0 Last Revised 2017/7/27 *---------- DMP3036SSD Spice Model ---------- .SUBCKT DMP3036SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01231 RS 30 3 0.001 RG 20 2 6.83 CGS 2 3 1.465E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.556E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 164.9 VMAX = 1.945E+005 KP = 39.94 + ETA = 0.005129 TOX = 6E-008 NSUB = 1.104E+016 KAPPA = 3.689 VTO = -2.072 .MODEL DCGD D CJO = 7.47E-010 VJ = 0.518 M = 0.3662 .MODEL DSUB D IS = 2.364E-010 N = 1.296 RS = 0.007836 BV = 33 +CJO = 9.148E-011 VJ = 0.644 M = 0.663 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3036SSD Spice Model v1.0 Last Revised 2017/7/27 *---------- DMP3036SSS Spice Model ---------- .SUBCKT DMP3036SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01231 RS 30 3 0.001 RG 20 2 6.83 CGS 2 3 1.465E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.556E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 164.9 VMAX = 1.945E+005 KP = 39.94 + ETA = 0.005129 TOX = 6E-008 NSUB = 1.104E+016 KAPPA = 3.689 VTO = -2.072 .MODEL DCGD D CJO = 7.47E-010 VJ = 0.518 M = 0.3662 .MODEL DSUB D IS = 2.364E-010 N = 1.296 RS = 0.007836 BV = 33 +CJO = 9.148E-011 VJ = 0.644 M = 0.663 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3036SSS Spice Model v1.0 Last Revised 2017/7/27 *---------- DMP3037LSS Spice Model ---------- .SUBCKT DMP3037LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.013 RS 30 3 0.001 RG 20 2 22.85 CGS 2 3 8.8E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 30 KAPPA = 19.32 VTO = -1.87 .MODEL DCGD D CJO = 4.542E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.264E-011 N = 1.1 RS = 0.0841 BV = 33.2 CJO = 8.059E-011 VJ = 0.8 M = 0.6 TT = 6.78 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3037LSS Spice Model v1.0W Last Revised 2018/11/02 ---------- DMP3037LSSQ Spice Model ---------- .SUBCKT DMP3037LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3037LSSQ Spice Model v2.0 Last Revised 2019/9/24 *---------- DMP3045LFVW Spice Model ---------- .SUBCKT DMP3045LFVW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.017 RS 30 3 0.001 RG 20 2 10.43 CGS 2 3 6.6E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.1 + TOX = 1E-007 NSUB = 1E+014 KP = 16.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.825E-010 VJ = 0.5 M = 0.48 .MODEL DSUB D IS = 2.5E-009 N = 1.44 RS = 0.0016 BV = 37.32 + CJO = 1.353E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 6.35E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/15 *---------- DMP3045LFVWQ Spice Model ---------- .SUBCKT DMP3045LFVWQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.017 RS 30 3 0.001 RG 20 2 10.43 CGS 2 3 6.6E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.1 + TOX = 1E-007 NSUB = 1E+014 KP = 16.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.825E-010 VJ = 0.5 M = 0.48 .MODEL DSUB D IS = 2.5E-009 N = 1.44 RS = 0.0016 BV = 37.32 + CJO = 1.353E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 6.35E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/15 *---------- DMP3045LVT Spice Model ---------- .SUBCKT DMP3045LVT 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.017 RS 30 3 0.001 RG 20 2 10.43 CGS 2 3 6.6E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.1 + TOX = 1E-007 NSUB = 1E+014 KP = 16.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.825E-010 VJ = 0.5 M = 0.48 .MODEL DSUB D IS = 2.5E-009 N = 1.44 RS = 0.0016 BV = 37.32 + CJO = 1.353E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 6.35E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/15 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP3045LVTQ Spice Model ---------- .SUBCKT DMP3045LVTQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.017 RS 30 3 0.001 RG 20 2 10.43 CGS 2 3 6.6E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 450 VMAX = 1E+005 ETA = 0 VTO = -2.1 + TOX = 1E-007 NSUB = 1E+014 KP = 16.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.825E-010 VJ = 0.5 M = 0.48 .MODEL DSUB D IS = 2.5E-009 N = 1.44 RS = 0.0016 BV = 37.32 + CJO = 1.353E-010 VJ = 0.6 M = 0.4607 XTI = 0 TT = 6.35E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/15 *---------- DMP3048LSD Spice Model ---------- .SUBCKT DMP3048LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03788 RS 30 3 0.001 RG 20 2 6.83 CGS 2 3 1.301E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 29.14 KAPPA = 19.32 VTO = -0.9085 .MODEL DCGD D CJO = 3E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 7.066E-009 N = 1.281 RS = 0.04157 BV = 32 CJO = 1.76E-010 VJ = 0.8 M = 0.6 TT = 5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3048LSD Spice Model v1.0M Last Revised 2016/9/12 *---------- DMP3050LVT Spice Model ---------- .SUBCKT DMP3050LVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3050LVT Spice Model v2.0 Last Revised 2012/8/06 *---------- DMP3050LVTQ Spice Model ---------- .SUBCKT DMP3050LVTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3050LVTQ Spice Model v2.0 Last Revised 2012/8/06 ---------- DMP3056L Spice Model ---------- .SUBCKT DMP3056L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3036L Spice Model v2.0 Last Revised 2017/3/1 *---------- DMP3056LDM Spice Model ---------- .SUBCKT DMP3056LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3056LDM Spice Model v2.0 Last Revised 2012/8/06 *---------- DMP3056LSD Spice Model ---------- .SUBCKT DMP3056LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3036LSD Spice Model v2.0 Last Revised 2012/8/06 *---------- DMP3056LSDQ Spice Model ---------- .SUBCKT DMP3056LSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3056LSDQ Spice Model v2.0 Last Revised 2017/3/1 *---------- DMP3056LSS Spice Model ---------- .SUBCKT DMP3056LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3056LSS Spice Model v2.0 Last Revised 2012/8/06 ---------- DMP3056LSSQ Spice Model ---------- .SUBCKT DMP3056LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3056LSSQ Spice Model v2.0 Last Revised 2019/9/24 *---------- DMP3065LVT Spice Model ---------- .SUBCKT DMP3065LVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01936 RS 30 3 0.001 RG 20 2 162.5 CGS 2 3 4.469E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 10 KAPPA = 19.32 VTO = -2.002 .MODEL DCGD D CJO = 4.542E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.835E-009 N = 1.386 RS = 0.03158 BV = 34.21 + CJO = 6.259E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3065LVT Spice Model v1.0J Last Revised 2018/08/16 *---------- DMP3068L Spice Model ---------- .SUBCKT DMP3068L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04199 RS 30 3 0.001 RG 20 2 14.02 CGS 2 3 6.916E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 13.5 KAPPA = 19.32 VTO = -0.9435 .MODEL DCGD D CJO = 1.912E-010 VJ = 0.6852 M = 0.6 .MODEL DSUB D IS = 1.682E-009 N = 1.449 RS = 0.02203 BV = 31 + CJO = 7.714E-011 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3068L Spice Model v1.0J Last Revised 2018/08/15 *---------- DMP3068LVT Spice Model ---------- .SUBCKT DMP3068LVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04199 RS 30 3 0.001 RG 20 2 14.02 CGS 2 3 6.916E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 13.5 KAPPA = 19.32 VTO = -0.9435 .MODEL DCGD D CJO = 1.912E-010 VJ = 0.6852 M = 0.6 .MODEL DSUB D IS = 1.682E-009 N = 1.449 RS = 0.02203 BV = 31 + CJO = 7.714E-011 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3068LVT Spice Model v1.0J Last Revised 2018/08/15 *---------- DMP3085LSD Spice Model ---------- .SUBCKT DMP3085LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02942 RS 30 3 0.001 RG 20 2 10.27 CGS 2 3 5.366E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.769 KAPPA = 19.32 VTO = -1.917 .MODEL DCGD D CJO = 2.502E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.949E-009 N = 1.628 RS = 0.02235 BV = 33 CJO = 5.295E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3085LSD Spice Model v1.0M Last Revised 2016/10/6 *---------- DMP3085LSD Spice Model ---------- .SUBCKT DMP3085LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02942 RS 30 3 0.001 RG 20 2 10.27 CGS 2 3 5.366E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.769 KAPPA = 19.32 VTO = -1.917 .MODEL DCGD D CJO = 2.502E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.949E-009 N = 1.628 RS = 0.02235 BV = 33 CJO = 5.295E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3085LSD Spice Model v1.0M Last Revised 2016/10/6 *---------- DMP3085LSS Spice Model ---------- .SUBCKT DMP3085LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02942 RS 30 3 0.001 RG 20 2 10.27 CGS 2 3 5.366E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.769 KAPPA = 19.32 VTO = -1.917 .MODEL DCGD D CJO = 2.502E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.949E-009 N = 1.628 RS = 0.02235 BV = 33 CJO = 5.295E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3085LSS Spice Model v1.0M Last Revised 2016/10/6 *---------- DMP3096L Spice Model ---------- .SUBCKT DMP3096L D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.032 RS 30 3 0.0001 RG 20 2 9.2 CGS 2 3 3.439E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.22E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 103.5 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+016 KP = 7.5 KAPPA = 0.2 VTO = -1.983 .MODEL DCGD D CJO = 1.45E-010 VJ = 0.5 M = 0.3616 .MODEL DSUB D IS = 9.5E-010 N = 1.431 RS = 0.006267 BV = 34.23 + CJO = 8E-011 VJ = 0.6 M = 0.5125 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/09 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP3096LQ Spice Model ---------- .SUBCKT DMP3096LQ D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.032 RS 30 3 0.0001 RG 20 2 9.2 CGS 2 3 3.439E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.22E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 103.5 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+016 KP = 7.5 KAPPA = 0.2 VTO = -1.983 .MODEL DCGD D CJO = 1.45E-010 VJ = 0.5 M = 0.3616 .MODEL DSUB D IS = 9.5E-010 N = 1.431 RS = 0.006267 BV = 34.23 + CJO = 8E-011 VJ = 0.6 M = 0.5125 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/09 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP3097L Spice Model ---------- .SUBCKT DMP3097L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02942 RS 30 3 0.001 RG 20 2 10.27 CGS 2 3 5.366E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 8.769 KAPPA = 19.32 VTO = -1.917 .MODEL DCGD D CJO = 2.502E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.949E-009 N = 1.628 RS = 0.02235 BV = 33 CJO = 5.295E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3097L Spice Model v1.0M Last Revised 2020/11/7 *---------- DMP3097LQ Spice Model ---------- .SUBCKT DMP3097LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02942 RS 30 3 0.001 RG 20 2 10.27 CGS 2 3 5.366E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 8.769 KAPPA = 19.32 VTO = -1.917 .MODEL DCGD D CJO = 2.502E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.949E-009 N = 1.628 RS = 0.02235 BV = 33 CJO = 5.295E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3097LQ Spice Model v1.0M Last Revised 2020/11/7 *DIODES_INC_SPICE_MODEL DMP3098L *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11Dec2012 *VERSION=1 .SUBCKT DMP3098L 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 100E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 400E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS *DIODES_INC_SPICE_MODEL DMP3098LDM *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11Dec2012 *VERSION=1 .SUBCKT DMP3098LDM 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 26E-3 RS 23 3 Rmod1 26E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 100E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 400E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS *---------- DMP3098LQ Spice Model ---------- .SUBCKT DMP3098LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0434 RS 30 3 0.001 RG 20 2 14.77 CGS 2 3 4.782E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.923 KAPPA = 19.32 VTO = -2.061 .MODEL DCGD D CJO = 2.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.524E-010 N = 1.412 RS = 0.04459 BV = 33 CJO = 3.071E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3098LQ Spice Model v1.0M Last Revised 2017/3/14 *DIODES_INC_SPICE_MODEL DMP3098LSD *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11Dec2012 *VERSION=1 .SUBCKT DMP3098LSD 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 26E-3 RS 23 3 Rmod1 26E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 100E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 400E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS *DIODES_INC_SPICE_MODEL DMP3098LSS *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11Dec2012 *VERSION=1 .SUBCKT DMP3098LSS 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 26E-3 RS 23 3 Rmod1 26E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 100E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 400E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS *---------- DMP3099L Spice Model ---------- .SUBCKT DMP3099L 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.034 RS 30 3 0.001 RG 20 2 10.27 CGS 2 3 5.402E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 11.4 KAPPA = 0.2 VTO = -1.951 .MODEL DCGD D CJO = 2.23E-010 VJ = 0.5007 M = 0.4371 .MODEL DSUB D IS = 2.1E-009 N = 1.535 RS = 0.01225 BV = 33 + CJO = 5.41E-011 VJ = 0.6 M = 0.5308 XTI=0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/19 *The model can only be used at 25 degC *---------- DMP3099LQ Spice Model ---------- .SUBCKT DMP3099LQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.034 RS 30 3 0.001 RG 20 2 10.27 CGS 2 3 5.402E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 11.4 KAPPA = 0.2 VTO = -1.951 .MODEL DCGD D CJO = 2.23E-010 VJ = 0.5007 M = 0.4371 .MODEL DSUB D IS = 2.1E-009 N = 1.535 RS = 0.01225 BV = 33 + CJO = 5.41E-011 VJ = 0.6 M = 0.5308 XTI=0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/19 *The model can only be used at 25 degC *---------- DMP3105LVT Spice Model ---------- .SUBCKT DMP3105LVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04181 RS 30 3 0.001 RG 20 2 12.29 CGS 2 3 3.719E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.46E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 9.397 KAPPA = 9.681 VTO = -1.023 .MODEL DCGD D CJO = 3.903E-010 VJ = 0.2566 M = 0.45 .MODEL DSUB D IS = 2.936E-009 N = 1.327 RS = 0.07557 BV = 33 CJO = 1.598E-010 VJ = 0.4699 M = 0.5274 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3105LVT Spice Model v1.0 Last Revised 2011/10/7 *---------- DMP3125L Spice Model ---------- .SUBCKT DMP3125L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04242 RS 30 3 0.001 RG 20 2 53.6 CGS 2 3 2.497E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 4.757 KAPPA = 19.32 VTO = -1.65 .MODEL DCGD D CJO = 5.012E-011 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.656E-009 N = 1.475 RS = 0.01802 BV = 37 CJO = 4.932E-011 VJ = 0.6 M = 0.6 TT = 4.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3125L Spice Model v1.0M Last Revised 2017/10/11 *---------- DMP3130L Spice Model ---------- .SUBCKT DMP3130L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04181 RS 30 3 0.001 RG 20 2 12.29 CGS 2 3 3.719E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.46E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 9.397 KAPPA = 9.681 VTO = -1.023 .MODEL DCGD D CJO = 3.903E-010 VJ = 0.2566 M = 0.45 .MODEL DSUB D IS = 2.936E-009 N = 1.327 RS = 0.07557 BV = 33 CJO = 1.598E-010 VJ = 0.4699 M = 0.5274 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3130L Spice Model v1.0 Last Revised 2011/10/7 *---------- DMP3130LQ Spice Model ---------- .SUBCKT DMP3130LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04181 RS 30 3 0.001 RG 20 2 12.29 CGS 2 3 3.719E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.46E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 9.397 KAPPA = 9.681 VTO = -1.023 .MODEL DCGD D CJO = 3.903E-010 VJ = 0.2566 M = 0.45 .MODEL DSUB D IS = 2.936E-009 N = 1.327 RS = 0.07557 BV = 33 CJO = 1.598E-010 VJ = 0.4699 M = 0.5274 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3130LQ Spice Model v1.0M Last Revised 2016/3/21 *---------- DMP3160L Spice Model ---------- .SUBCKT DMP3160L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04307 RS 30 3 0.001 RG 20 2 17.1 CGS 2 3 3.339E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.459 KAPPA = 9.123 VTO = -1.527 .MODEL DCGD D CJO = 1.701E-010 VJ = 0.4656 M = 0.372 .MODEL DSUB D IS = 5E-010 N = 1.421 RS = 0.05533 BV = 33 CJO = 2.821E-011 VJ = 0.5166 M = 0.4868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3160L Spice Model v1.0 Last Revised 2011/10/28 *---------- DMP3164LVT Spice Model ---------- .SUBCKT DMP3164LVT 10 20 30 TERMINALS D G S MODEL FORMAT SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 1E-005 RG 20 2 7.22 CGS 2 3 2.998E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 6 KAPPA = 19.32 VTO = -1.38 IS = 0 .MODEL DCGD D CJO = 1.82E-010 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.173E-008 N = 1.645 RS = 0.01267 BV = 35.66 + CJO = 2.948E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMP3164LVT Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMP3165L Spice Model ---------- .SUBCKT DMP3165L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02887 RS 30 3 0.001 RG 20 2 12.47 CGS 2 3 2.758E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-012 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 5.567 KAPPA = 19.32 VTO = -1.948 .MODEL DCGD D CJO = 7E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.231E-010 N = 1.336 RS = 0.01227 BV = 33 CJO = 6.817E-011 VJ = 0.8 M = 0.6 TT = 3.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3165L Spice Model v1.0M Last Revised 2018/2/2 *---------- DMP3165LQ Spice Model ---------- .SUBCKT DMP3165LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02887 RS 30 3 0.001 RG 20 2 12.47 CGS 2 3 2.758E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-012 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 5.567 KAPPA = 19.32 VTO = -1.948 .MODEL DCGD D CJO = 7E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.231E-010 N = 1.336 RS = 0.01227 BV = 33 CJO = 6.817E-011 VJ = 0.8 M = 0.6 TT = 3.2E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3165LQ Spice Model v1.0M Last Revised 2020/2/2 *---------- DMP3165SVT Spice Model ---------- .SUBCKT DMP3165SVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 1E-005 RG 20 2 8.35 CGS 2 3 2.773E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 5.6 KAPPA = 19.32 VTO = -1.8 IS = 0 .MODEL DCGD D CJO = 1.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.142E-010 N = 1.452 RS = 0.01325 BV = 37.66 + CJO = 6E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMP3165SVT *Diodes Spice Model v1.0J Last Revised 2019/05/20 *---------- DMP3165SVTQ Spice Model ---------- .SUBCKT DMP3165SVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 1E-005 RG 20 2 8.35 CGS 2 3 2.773E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 5.6 KAPPA = 19.32 VTO = -1.8 IS = 0 .MODEL DCGD D CJO = 1.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.142E-010 N = 1.452 RS = 0.01325 BV = 37.66 + CJO = 6E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS DMP3165SVTQ *Diodes Spice Model v1.0J Last Revised 2022/05/20 *---------- DMP31D0U Spice Model ---------- .SUBCKT DMP31D0U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.3953 RS 30 3 0.001 RG 20 2 166 CGS 2 3 7.126E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 3.955 KAPPA = 0.2552 VTO = -0.6755 .MODEL DCGD D CJO = 3.218E-011 VJ = 0.07451 M = 0.3033 .MODEL DSUB D IS = 1.621E-008 N = 1.532 RS = 0.5477 + BV = 95.86 CJO = 1.035E-011 VJ = 0.0002124 M = 0.1217 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.137E-005 N = 1.184E+004 BV = 4.441E-010 .ENDS *Diodes DMP31D0U Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP31D0UFB4 Spice Model ---------- .SUBCKT DMP31D0UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.3953 RS 30 3 0.001 RG 20 2 166 CGS 2 3 7.126E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 3.955 KAPPA = 0.2552 VTO = -0.6755 .MODEL DCGD D CJO = 3.218E-011 VJ = 0.07451 M = 0.3033 .MODEL DSUB D IS = 1.621E-008 N = 1.532 RS = 0.5477 + BV = 95.86 CJO = 1.035E-011 VJ = 0.0002124 M = 0.1217 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.137E-005 N = 1.184E+004 BV = 4.441E-010 .ENDS *Diodes DMP31D0UFB4 Spice Model v1.0 Last Revised 2013/10/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1U Spice Model ---------- .SUBCKT DMP31D1U 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/23 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1UDW Spice Model ---------- .SUBCKT DMP31D1UDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1UDWQ Spice Model ---------- .SUBCKT DMP31D1UDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1UFB4 Spice Model ---------- .SUBCKT DMP31D1UFB4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/23 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1UFB4Q Spice Model ---------- .SUBCKT DMP31D1UFB4Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/23 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1UQ Spice Model ---------- .SUBCKT DMP31D1UQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1UVT Spice Model ---------- .SUBCKT DMP31D1UVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1UVTQ Spice Model ---------- .SUBCKT DMP31D1UVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1UW Spice Model ---------- .SUBCKT DMP31D1UW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP31D1UWQ Spice Model ---------- .SUBCKT DMP31D1UWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.597 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 5.023E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.359E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB DESD1 2 5 DESD DESD2 3 5 DESD .MODEL DESD D BV = 8.4 .MODEL PMOS PMOS LEVEL = 3 U0 = 595.4 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.883E+015 KP = 2.35 KAPPA = 0.2 VTO = -0.6966 .MODEL DCGD D CJO = 3.4E-011 VJ = 0.8 M = 0.6309 .MODEL DSUB D IS = 7.6E-010 N = 1.627 RS = 0.08498 BV = 32.76 + CJO = 2.5E-011 VJ = 0.6259 M = 0.5209 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP31D7L Spice Model ---------- .SUBCKT DMP31D7L_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7L Spice Model v1.0J Last Revised 2018/01/14 *---------- DMP31D7LDW Spice Model ---------- .SUBCKT DMP31D7LDW_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LDW Spice Model v1.0J Last Revised 2018/01/14 *---------- DMP31D7LDWQ Spice Model ---------- .SUBCKT DMP31D7LDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LDWQ Spice Model v1.0J Last Revised 2020/01/14 *---------- DMP31D7LFB Spice Model ---------- .SUBCKT DMP31D7LFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LFB Spice Model v1.0J Last Revised 2021/11/14 *---------- DMP31D7LFBQ Spice Model ---------- .SUBCKT DMP31D7LFBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LFBQ Spice Model v1.0J Last Revised 2021/11/14 *---------- DMP31D7LQ Spice Model ---------- .SUBCKT DMP31D7LQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LQ Spice Model v1.0J Last Revised 2022/01/14 *---------- DMP31D7LT Spice Model ---------- .SUBCKT DMP31D7LT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LT Spice Model v1.0J Last Revised 2019/01/14 *---------- DMP31D7LTQ Spice Model ---------- .SUBCKT DMP31D7LTQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LTQ Spice Model v1.0J Last Revised 2023/01/14 *---------- DMP31D7LV Spice Model ---------- .SUBCKT DMP31D7LV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LV Spice Model v1.0J Last Revised 2022/11/14 *---------- DMP31D7LVQ Spice Model ---------- .SUBCKT DMP31D7LVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LVQ Spice Model v1.0J Last Revised 2022/11/14 *---------- DMP31D7LW Spice Model ---------- .SUBCKT DMP31D7LW_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LW Spice Model v1.0J Last Revised 2018/01/14 *---------- DMP31D7LWQ Spice Model ---------- .SUBCKT DMP31D7LWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.39 RS 30 3 1E-006 RG 20 2 4.45 CGS 2 3 1.705E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.131 KAPPA = 19.32 VTO = -2.377 .MODEL DCGD D CJO = 7E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.459E-009 N = 1.767 RS = 0.05116 BV = 34.99 + CJO = 3E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP31D7LWQ Spice Model v1.0J Last Revised 2020/01/14 *---------- DMP32D4S Spice Model ---------- .SUBCKT DMP32D4SW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2489 RS 30 3 0.001 RG 20 2 6.2 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.241E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 + ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.9475 + KAPPA = 4.451E-013 VTO = -2.03 .MODEL DCGD D CJO = 4.722E-011 VJ = 0.002858 M = 0.1852 .MODEL DSUB D IS = 2.27E-010 N = 1.611 RS = 0.3594 BV = 95.86 CJO = 4.168E-012 + VJ = 2.307E-006 M = 0.05063 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 .ENDS *Diodes DMP32D4S Spice Model v1.0 Last Revised 2013/8/5 *---------- DMP32D4SFB Spice Model ---------- .SUBCKT DMP32D4SFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2489 RS 30 3 0.001 RG 20 2 6.2 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.241E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 + ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.9475 + KAPPA = 4.451E-013 VTO = -2.03 .MODEL DCGD D CJO = 4.722E-011 VJ = 0.002858 M = 0.1852 .MODEL DSUB D IS = 2.27E-010 N = 1.611 RS = 0.3594 BV = 95.86 CJO = 4.168E-012 + VJ = 2.307E-006 M = 0.05063 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 .ENDS *Diodes DMP32D4SFB Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP32D4SW Spice Model ---------- .SUBCKT DMP32D4SW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2489 RS 30 3 0.001 RG 20 2 6.2 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.241E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 + ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.9475 + KAPPA = 4.451E-013 VTO = -2.03 .MODEL DCGD D CJO = 4.722E-011 VJ = 0.002858 M = 0.1852 .MODEL DSUB D IS = 2.27E-010 N = 1.611 RS = 0.3594 BV = 95.86 CJO = 4.168E-012 + VJ = 2.307E-006 M = 0.05063 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 .ENDS *Diodes DMP32D4SW Spice Model v1.0 Last Revised 2013/8/5 *---------- DMP32D5LFA Spice Model ---------- .SUBCKT DMP32D5LFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2549 RS 30 3 1E-006 RG 20 2 237 CGS 2 3 4.266E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.323 KAPPA = 49.86 VTO = -2 .MODEL DCGD D CJO = 2.35E-011 VJ = 0.8 M = 0.3265 .MODEL DSUB D IS = 2.271E-010 N = 1.582 RS = 0.2191 BV = 50 CJO = 7.829E-012 VJ = 0.7644 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP32D5LFA Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP32D5SFB Spice Model ---------- .SUBCKT DMP32D5SFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2592 RS 30 3 0.001 RG 20 2 237.4 CGS 2 3 3.603E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.382 KAPPA = 19.32 VTO = -2 .MODEL DCGD D CJO = 6E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.245E-009 N = 1.737 RS = 0.2776 BV = 33.33 + CJO = 1.028E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP32D5SFB Spice Model v1.0M Last Revised 2018/04/30 *---------- DMP32D8UFZ Spice Model ---------- .SUBCKT DMP32D8UFZ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.5 RS 30 3 0.001 RG 20 2 363.8 CGS 2 3 2.077E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5699 KAPPA = 19.32 VTO = -0.739 .MODEL DCGD D CJO = 9.411E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.047E-007 N = 2.719 RS = 0.2187 BV = 39.12 + CJO = 3.631E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2021/12/20 *---------- DMP32D9UDA Spice Model ---------- .SUBCKT DMP32D9UDA 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.5 RS 30 3 0.001 RG 20 2 363.8 CGS 2 3 2.077E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5699 KAPPA = 19.32 VTO = -0.739 .MODEL DCGD D CJO = 9.411E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.047E-007 N = 2.719 RS = 0.2187 BV = 39.12 + CJO = 3.631E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2018/12/20 *---------- DMP32D9UDAQ Spice Model ---------- .SUBCKT DMP32D9UDAQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.5 RS 30 3 0.001 RG 20 2 363.8 CGS 2 3 2.077E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5699 KAPPA = 19.32 VTO = -0.739 .MODEL DCGD D CJO = 9.411E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.047E-007 N = 2.719 RS = 0.2187 BV = 39.12 + CJO = 3.631E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2018/12/20 *---------- DMP32D9UFA Spice Model ---------- .SUBCKT DMP32D9UFA 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.5 RS 30 3 0.001 RG 20 2 363.8 CGS 2 3 2.077E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5699 KAPPA = 19.32 VTO = -0.739 .MODEL DCGD D CJO = 9.411E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.047E-007 N = 2.719 RS = 0.2187 BV = 39.12 + CJO = 3.631E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2022/12/20 *---------- DMP32D9UFO Spice Model ---------- .SUBCKT DMP32D9UFO 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.5 RS 30 3 0.001 RG 20 2 363.8 CGS 2 3 2.077E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5699 KAPPA = 19.32 VTO = -0.739 .MODEL DCGD D CJO = 9.411E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.047E-007 N = 2.719 RS = 0.2187 BV = 39.12 + CJO = 3.631E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2018/12/20 *---------- DMP32D9UFZ Spice Model ---------- .SUBCKT DMP32D9UFZ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.727 RS 30 3 0.001 RG 20 2 389 CGS 2 3 2.041E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.3E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5546 KAPPA = 49.86 VTO = -0.7516 .MODEL DCGD D CJO = 7.862E-012 VJ = 0.2 M = 0.3592 .MODEL DSUB D IS = 2.888E-005 N = 4.275 RS = 4.441E-010 BV = 35 CJO = 2.878E-012 VJ = 0.6 M = 0.2781 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP32D9UFZ Spice Model v1.0 Last Revised 2014/12/5 *---------- DMP32M6SPS Spice Model ---------- .SUBCKT DMP32M6SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003 RS 30 3 1E-006 RG 20 2 6.38 CGS 2 3 8.053E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 147.8 KAPPA = 19.32 VTO = -2.296 .MODEL DCGD D CJO = 2.1E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.106E-010 N = 1.098 RS = 1.972E-009 BV = 35.35 + CJO = 3E-009 VJ = 0.8 M = 0.6 TT = 1.631E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP32M6SPS Spice Model v1.0J Last Revised 2019/01/11 *---------- DMP34M4SPS Spice Model ---------- .SUBCKT DMP34M4SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 21.06 CGS 2 3 3.557E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 105.6 KAPPA = 19.32 VTO = -3 .MODEL DCGD D CJO = 9E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.318E-010 N = 1.196 RS = 2.078E-009 BV = 35 CJO = 2.5E-009 VJ = 0.8 M = 0.6 TT = 1.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3125L Spice Model v1.0M Last Revised 2017/10/12 *---------- DMP4006SPSW Spice Model ---------- .SUBCKT DMP4006SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003 RS 30 3 0.0005 RG 20 2 7.77 CGS 2 3 7.451E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.91E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 70 KAPPA = 0.2 VTO = -2.9 .MODEL DCGD D CJO = 2.706E-009 VJ = 0.7682 M = 0.4521 .MODEL DSUB D IS = 5E-009 N = 1.377 RS = 5.771E-008 BV = 45.59 + CJO = 2.102E-009 VJ = 0.7009 M = 0.604 XTI = 0 TT = 2.2E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/02/24 *---------- DMP4006SPSWQ Spice Model ---------- .SUBCKT DMP4006SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003 RS 30 3 0.0005 RG 20 2 7.77 CGS 2 3 7.451E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.91E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 70 KAPPA = 0.2 VTO = -2.9 .MODEL DCGD D CJO = 2.706E-009 VJ = 0.7682 M = 0.4521 .MODEL DSUB D IS = 5E-009 N = 1.377 RS = 5.771E-008 BV = 45.59 + CJO = 2.102E-009 VJ = 0.7009 M = 0.604 XTI = 0 TT = 2.2E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/02/24 *---------- DMPH4009SPSW Spice Model ---------- .SUBCKT DMPH4009SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004873 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.978E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 92.25 KAPPA = 0.2 VTO = -2.246 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 5.9E-009 N = 1.406 RS = 0.001107 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4009SPSWQ Spice Model ---------- .SUBCKT DMPH4009SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004873 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.978E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 92.25 KAPPA = 0.2 VTO = -2.246 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 5.9E-009 N = 1.406 RS = 0.001107 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4009SSS Spice Model ---------- .SUBCKT DMP4009SSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004873 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.978E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 92.25 KAPPA = 0.2 VTO = -2.246 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 5.9E-009 N = 1.406 RS = 0.001107 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4009SSSQ Spice Model ---------- .SUBCKT DMP4009SSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004873 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.978E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 92.25 KAPPA = 0.2 VTO = -2.246 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 5.9E-009 N = 1.406 RS = 0.001107 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4010SK3 Spice Model ---------- .SUBCKT DMP4010SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4010SK3 Spice Model v1.0M Last Revised 2016/1/27 *---------- DMP4010SK3Q Spice Model ---------- .SUBCKT DMP4010SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4010SK3Q Spice Model v1.0M Last Revised 2016/1/27 *---------- DMP4011SK3 Spice Model ---------- .SUBCKT DMP4011SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004 RS 30 3 0.001 RG 20 2 21.4 CGS 2 3 3E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 68 KAPPA = 19.32 VTO = -2.892 .MODEL DCGD D CJO = 1.9E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.136E-011 N = 1.018 RS = 0.004014 BV = 46.7 CJO = 1.5E-009 VJ = 0.8 M = 0.6 TT = 1.252E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4011SK3 Spice Model v1.0W Last Revised 2019/01/22 *---------- DMP4011SK3Q Spice Model ---------- .SUBCKT DMP4011SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0016 RS 30 3 0.001 RG 20 2 21.4 CGS 2 3 3.164E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.61E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 37 KAPPA = 19.32 VTO = -2.43 .MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.393E-009 N = 1.324 RS = 0.002311 BV = 46.7 + CJO = 1.7E-009 VJ = 0.8 M = 0.6 TT = 1.252E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4011SK3Q Spice Model v1.0J Last Revised 2019/01/22 *---------- DMP4011SPS Spice Model ---------- .SUBCKT DMP4011SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004 RS 30 3 0.001 RG 20 2 21.4 CGS 2 3 3E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 68 KAPPA = 19.32 VTO = -2.892 .MODEL DCGD D CJO = 1.9E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.136E-011 N = 1.018 RS = 0.004014 BV = 46.7 CJO = 1.5E-009 VJ = 0.8 M = 0.6 TT = 1.252E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4011SPS Spice Model v1.0W Last Revised 2019/04/11 *---------- DMP4011SPSQ Spice Model ---------- .SUBCKT DMP4011SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004 RS 30 3 0.001 RG 20 2 21.4 CGS 2 3 3E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 68 KAPPA = 19.32 VTO = -2.892 .MODEL DCGD D CJO = 1.9E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.136E-011 N = 1.018 RS = 0.004014 BV = 46.7 CJO = 1.5E-009 VJ = 0.8 M = 0.6 TT = 1.252E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4011SPSQ Spice Model v1.0W Last Revised 2019/04/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP4011SPSW Spice Model ---------- .SUBCKT DMP4011SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004 RS 30 3 0.001 RG 20 2 21.4 CGS 2 3 3E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 68 KAPPA = 19.32 VTO = -2.892 .MODEL DCGD D CJO = 1.9E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.136E-011 N = 1.018 RS = 0.004014 BV = 46.7 CJO = 1.5E-009 VJ = 0.8 M = 0.6 TT = 1.252E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4011SPSW Spice Model v1.0W Last Revised 2019/04/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP4011SPSWQ Spice Model ---------- .SUBCKT DMP4011SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004 RS 30 3 0.001 RG 20 2 21.4 CGS 2 3 3E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 68 KAPPA = 19.32 VTO = -2.892 .MODEL DCGD D CJO = 1.9E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.136E-011 N = 1.018 RS = 0.004014 BV = 46.7 CJO = 1.5E-009 VJ = 0.8 M = 0.6 TT = 1.252E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4011SPSWQ Spice Model v1.0W Last Revised 2019/04/11 *---------- DMP4013LFG Spice Model ---------- .SUBCKT DMP4013LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00611 RS 30 3 0.001 RG 20 2 4.7 CGS 2 3 3.639E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 74.6 KAPPA = 19.32 VTO = -1.714 .MODEL DCGD D CJO = 1E-009 VJ = 0.6616 M = 0.6 .MODEL DSUB D IS = 1.522E-007 N = 1.682 RS = 1.802E-008 BV = 47 CJO = 8.551E-010 VJ = 0.75 M = 0.6 TT=1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4013LFG Spice Model v1.0M Last Revised 2016/4/18 *---------- DMP4013LFGQ Spice Model ---------- .SUBCKT DMP4013LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00611 RS 30 3 0.001 RG 20 2 4.7 CGS 2 3 3.639E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 74.6 KAPPA = 19.32 VTO = -1.714 .MODEL DCGD D CJO = 1E-009 VJ = 0.6616 M = 0.6 .MODEL DSUB D IS = 1.522E-007 N = 1.682 RS = 1.802E-008 BV = 47 CJO = 8.551E-010 VJ = 0.75 M = 0.6 TT=1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4013LFGQ Spice Model v1.0M Last Revised 2016/4/18 *---------- DMP4013SPS Spice Model ---------- .SUBCKT DMP4013SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007125 RS 30 3 0.001 RG 20 2 3.47 CGS 2 3 3.9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 78.86 KAPPA = 19.32 VTO = -2.7 .MODEL DCGD D CJO = 1.3E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.302E-010 N = 1.242 RS = 0.002214 BV = 45.03 + CJO = 6.999E-010 VJ = 0.8 M = 0.6 TT = 9.78E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4013SPS Spice Model v1.0M Last Revised 2019/04/11 *---------- DMP4013SPSQ Spice Model ---------- .SUBCKT DMP4013SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007125 RS 30 3 0.001 RG 20 2 3.47 CGS 2 3 3.9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 78.86 KAPPA = 19.32 VTO = -2.7 .MODEL DCGD D CJO = 1.3E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.302E-010 N = 1.242 RS = 0.002214 BV = 45.03 + CJO = 6.999E-010 VJ = 0.8 M = 0.6 TT = 9.78E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4013SPSQ Spice Model v1.0M Last Revised 2019/04/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP4013SPSW Spice Model ---------- .SUBCKT DMP4013SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007125 RS 30 3 0.001 RG 20 2 3.47 CGS 2 3 3.9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 78.86 KAPPA = 19.32 VTO = -2.7 .MODEL DCGD D CJO = 1.3E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.302E-010 N = 1.242 RS = 0.002214 BV = 45.03 + CJO = 6.999E-010 VJ = 0.8 M = 0.6 TT = 9.78E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4013SPSW Spice Model v1.0M Last Revised 2019/04/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP4013SPSWQ Spice Model ---------- .SUBCKT DMP4013SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007125 RS 30 3 0.001 RG 20 2 3.47 CGS 2 3 3.9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 78.86 KAPPA = 19.32 VTO = -2.7 .MODEL DCGD D CJO = 1.3E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.302E-010 N = 1.242 RS = 0.002214 BV = 45.03 + CJO = 6.999E-010 VJ = 0.8 M = 0.6 TT = 9.78E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4013SPSWQ Spice Model v1.0M Last Revised 2019/04/11 *---------- DMP4015SK3 Spice Model ---------- .SUBCKT DMP4015SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SK3 Spice Model v1.0 Last Revised 2015/7/16 *---------- DMP4015SK3Q Spice Model ---------- .SUBCKT DMP4015SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SK3Q Spice Model v1.0 Last Revised 2015/7/16 *---------- DMP4015SPS Spice Model ---------- .SUBCKT DMP4015SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SPS Spice Model v1.0 Last Revised 2015/7/16 *---------- DMP4015SPSQ Spice Model ---------- .SUBCKT DMP4015SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SPSQ Spice Model v1.0 Last Revised 2015/7/16 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP4015SPSW Spice Model ---------- .SUBCKT DMP4015SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SPSW Spice Model v1.0 Last Revised 2015/7/16 *---------- DMP4015SPSWQ Spice Model ---------- .SUBCKT DMP4015SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SPSWQ Spice Model v1.0 Last Revised 2022/6/9 *---------- DMP4015SSS Spice Model ---------- .SUBCKT DMP4015SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SSS Spice Model v1.0 Last Revised 2015/7/16 *---------- DMP4015SSSQ Spice Model ---------- .SUBCKT DMP4015SSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SSSQ Spice Model v1.0 Last Revised 2015/7/16 *---------- DMP4016SK3 Spice Model ---------- .SUBCKT DMP4016SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4016SK3Q Spice Model ---------- .SUBCKT DMP4016SK3Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4016SPSW Spice Model ---------- .SUBCKT DMP4016SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4016SPSWQ Spice Model ---------- .SUBCKT DMP4016SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4016SSS Spice Model ---------- .SUBCKT DMP4016SSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4016SSSQ Spice Model ---------- .SUBCKT DMP4016SSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4025LK3 Spice Model ---------- .SUBCKT DMP4025LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4025LK3 Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP4025LK3Q Spice Model ---------- .SUBCKT DMP4025LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4025LK3Q Spice Model v1.0 Last Revised 2020/4/21 *---------- DMP4025LSD Spice Model ---------- .SUBCKT DMP4025LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4025LSD Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP4025LSS Spice Model ---------- .SUBCKT DMP4025LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4025LSS Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP4025LSSQ Spice Model ---------- .SUBCKT DMP4025LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4025LSSQ Spice Model v1.0 Last Revised 2016/5/3 *---------- DMP4025SFG Spice Model ---------- .SUBCKT DMP4025SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4025SFG Spice Model v1.0 Last Revised 2013/08/4 *---------- DMP4025SFGQ Spice Model ---------- .SUBCKT DMP4025SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4025SFGQ Spice Model v1.0M Last Revised 2016/06/13 *---------- DMP4026LK3 Spice Model ---------- .SUBCKT DMP4026LK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0108 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.871E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 40 KAPPA = 0.2 VTO = -1.512 .MODEL DCGD D CJO = 9.5E-010 VJ = 0.5 M = 0.4441 .MODEL DSUB D IS = 1.51E-008 N = 1.529 RS = 0.003509 BV = 66.8 + CJO = 2.171E-010 VJ = 0.6 M = 0.5213 XTI = 0 TT = 8.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/9/13 *---------- DMP4026LK3Q Spice Model ---------- .SUBCKT DMP4026LK3Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0108 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.871E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 40 KAPPA = 0.2 VTO = -1.512 .MODEL DCGD D CJO = 9.5E-010 VJ = 0.5 M = 0.4441 .MODEL DSUB D IS = 1.51E-008 N = 1.529 RS = 0.003509 BV = 66.8 + CJO = 2.171E-010 VJ = 0.6 M = 0.5213 XTI = 0 TT = 8.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/9/13 *---------- DMP4026LSD Spice Model ---------- .SUBCKT DMP4026LSD 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0108 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.871E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 40 KAPPA = 0.2 VTO = -1.512 .MODEL DCGD D CJO = 9.5E-010 VJ = 0.5 M = 0.4441 .MODEL DSUB D IS = 1.51E-008 N = 1.529 RS = 0.003509 BV = 66.8 + CJO = 2.171E-010 VJ = 0.6 M = 0.5213 XTI = 0 TT = 8.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/9/13 *---------- DMP4026LSDQ Spice Model ---------- .SUBCKT DMP4026LSDQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0108 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.871E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 40 KAPPA = 0.2 VTO = -1.512 .MODEL DCGD D CJO = 9.5E-010 VJ = 0.5 M = 0.4441 .MODEL DSUB D IS = 1.51E-008 N = 1.529 RS = 0.003509 BV = 66.8 + CJO = 2.171E-010 VJ = 0.6 M = 0.5213 XTI = 0 TT = 8.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/9/13 *---------- DMP4026LSS Spice Model ---------- .SUBCKT DMP4026LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0108 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.871E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 40 KAPPA = 0.2 VTO = -1.512 .MODEL DCGD D CJO = 9.5E-010 VJ = 0.5 M = 0.4441 .MODEL DSUB D IS = 1.51E-008 N = 1.529 RS = 0.003509 BV = 66.8 + CJO = 2.171E-010 VJ = 0.6 M = 0.5213 XTI = 0 TT = 8.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/9/13 *---------- DMP4026LSSQ Spice Model ---------- .SUBCKT DMP4026LSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01 RS 30 3 0.0001 RG 20 2 2.49 CGS 2 3 1.871E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 40 KAPPA = 0.2 VTO = -1.512 .MODEL DCGD D CJO = 9.5E-010 VJ = 0.5 M = 0.4441 .MODEL DSUB D IS = 1.45E-008 N = 1.526 RS = 0.00338 BV = 66.8 + CJO = 2.171E-010 VJ = 0.6 M = 0.5213 XTI = 0 TT = 8.7E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/9/13 *---------- DMP4026SFG Spice Model ---------- .SUBCKT DMP4026SFG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0121 RS 30 3 0.0001 RG 20 2 2.37 CGS 2 3 1.827E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 50 KAPPA = 0.2 VTO = -1.475 .MODEL DCGD D CJO = 1.063E-009 VJ = 0.5 M = 0.456 .MODEL DSUB D IS = 3.05E-009 N = 1.371 RS = 0.005913 BV = 47.68 + CJO = 1.66E-010 VJ = 0.6 M = 0.4947 XTI = 0 TT = 9.25E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/11/10 *The model can only be used at 25 degC *---------- DMP4026SFGQ Spice Model ---------- .SUBCKT DMP4026SFGQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0121 RS 30 3 0.0001 RG 20 2 2.37 CGS 2 3 1.827E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 50 KAPPA = 0.2 VTO = -1.475 .MODEL DCGD D CJO = 1.063E-009 VJ = 0.5 M = 0.456 .MODEL DSUB D IS = 3.05E-009 N = 1.371 RS = 0.005913 BV = 47.68 + CJO = 1.66E-010 VJ = 0.6 M = 0.4947 XTI = 0 TT = 9.25E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/11/10 *The model can only be used at 25 degC *---------- DMP4026SFVW Spice Model ---------- .SUBCKT DMP4026SFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0078 RS 30 3 0.0001 RG 20 2 2.2 CGS 2 3 1.74E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.023E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 46.42 KAPPA = 0.2 VTO = -1.576 .MODEL DCGD D CJO = 9.95E-010 VJ = 0.5 M = 0.4328 .MODEL DSUB D IS = 6.6E-009 N = 1.499 RS = 0.002228 BV = 43.9 + CJO = 2.8E-010 VJ = 0.6 M = 0.5753 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/05/08 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4026SFVWQ Spice Model ---------- .SUBCKT DMP4026SFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0078 RS 30 3 0.0001 RG 20 2 2.2 CGS 2 3 1.74E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.023E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 46.42 KAPPA = 0.2 VTO = -1.576 .MODEL DCGD D CJO = 9.95E-010 VJ = 0.5 M = 0.4328 .MODEL DSUB D IS = 6.6E-009 N = 1.499 RS = 0.002228 BV = 43.9 + CJO = 2.8E-010 VJ = 0.6 M = 0.5753 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/05/08 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP4047LFDE Spice Model ---------- .SUBCKT DMP4047LFDE 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01942 RS 30 3 0.001 RG 20 2 7.7 CGS 2 3 1.299E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 26.29 KAPPA = 0.2 VTO = -1.781 .MODEL DCGD D CJO = 2.76E-010 VJ = 0.5978 M = 0.35 .MODEL DSUB D IS = 1.5E-009 N = 1.381 RS = 0.006948 BV = 50 + CJO = 1.585E-010 VJ = 0.6 M = 0.5211 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2020/09/07 *---------- DMP4047LFDEQ Spice Model ---------- .SUBCKT DMP4047LFDEQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01942 RS 30 3 0.001 RG 20 2 7.7 CGS 2 3 1.299E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 26.29 KAPPA = 0.2 VTO = -1.781 .MODEL DCGD D CJO = 2.76E-010 VJ = 0.5978 M = 0.35 .MODEL DSUB D IS = 1.5E-009 N = 1.381 RS = 0.006948 BV = 50 + CJO = 1.585E-010 VJ = 0.6 M = 0.5211 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2020/09/07 *---------- DMP4047SK3 Spice Model ---------- .SUBCKT DMP4047SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01862 RS 30 3 0.001 RG 20 2 7.7 CGS 2 3 1.3E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 22.81 KAPPA = 0.00531 VTO = -1.74 .MODEL DCGD D CJO = 2.751E-010 VJ = 0.4031 M = 0.3067 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4047SK3 Spice Model v1.0 Last Revised 2015/04/24 **---------- DMP4047SSD Spice Model ---------- .SUBCKT DMP4047SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0269 RS 30 3 0.001 RG 20 2 12.6 CGS 2 3 1.121E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 .MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4047SSD Spice Model v1.0 Last Revised 2014/02/05 *---------- DMP4051LK3 Spice Model ---------- .SUBCKT DMP4051LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02905 RS 30 3 0.001 RG 20 2 14.26 CGS 2 3 9.351E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 13.82 KAPPA = 36.81 VTO = -1.29 .MODEL DCGD D CJO = 2.635E-010 VJ = 0.2231 M = 0.365 .MODEL DSUB D IS = 2.311E-010 N = 1.205 RS = 0.02404 + BV = 50 CJO = 8.511E-011 VJ = 0.1768 M = 0.3549 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4051LK3 Spice Model v1.0 Last Revised 2013/05/05 *---------- DMP4065S Spice Model ---------- .SUBCKT DMP4065S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04289 RS 30 3 0.001 RG 20 2 10.24 CGS 2 3 5.75E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.015 KAPPA = 19.32 VTO = -1.585 .MODEL DCGD D CJO = 1.7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.364E-010 N = 1.26 RS = 0.0254 BV = 46 CJO = 2.226E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4065S Spice Model v1.0M Last Revised 2018/2/1 *---------- DMP4065SK3 Spice Model ---------- .SUBCKT DMP4065SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04289 RS 30 3 0.001 RG 20 2 10.24 CGS 2 3 5.75E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.015 KAPPA = 19.32 VTO = -1.585 .MODEL DCGD D CJO = 1.7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.364E-010 N = 1.26 RS = 0.0254 BV = 46 CJO = 2.226E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4065SK3 Spice Model v1.0M Last Revised 2020/11/9 *---------- DMP4065SQ Spice Model ---------- .SUBCKT DMP4065SQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04289 RS 30 3 0.001 RG 20 2 10.24 CGS 2 3 5.75E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.015 KAPPA = 19.32 VTO = -1.585 .MODEL DCGD D CJO = 1.7E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.364E-010 N = 1.26 RS = 0.0254 BV = 46 CJO = 2.226E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4065SQ Spice Model v1.0M Last Revised 2017/9/19 *---------- DMP45H150DHE Spice Model ---------- .SUBCKT DMP45H150DHE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 39.3 RS 30 3 0.001 RG 20 2 51.5 CGS 2 3 5.872E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.2487 KAPPA = 19.32 VTO = -3.203 .MODEL DCGD D CJO = 2.067E-011 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.977E-010 N = 1.498 RS = 0.04929 BV = 527 CJO = 8.446E-011 VJ = 0.6352 M = 0.6 TT = 5.4E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP45H150DHE Spice Model v1.0M Last Revised 2017/7/13 *---------- DMP45H21DHE Spice Model ---------- .SUBCKT DMP45H21DHE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 10.09 RS 30 3 0.001 RG 20 2 611.5 CGS 2 3 1E-09 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.1236 KAPPA = 19.32 VTO = -4.317 .MODEL DCGD D CJO = 4.992E-011 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 3.303E-010 N = 1.458 RS = 0.01541 BV = 650 CJO = 2.508E-010 VJ = 0.6494 M = 0.6559 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP45H21DHE Spice Model v1.0 Last Revised 2015/9/23 *---------- DMP45H4D9HJ3 Spice Model ---------- .SUBCKT DMP45H4D9HJ3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 3.071 RS 30 3 0.001 RG 20 2 280.6 CGS 2 3 5.247E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.8385 KAPPA = 19.32 VTO = -4.541 .MODEL DCGD D CJO = 4E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.777E-010 N = 1.379 RS = 4.441E-010 BV = 513 CJO = 9.289E-010 VJ = 0.6602 M = 0.7995 TT = 8.41E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP45H4D9HJ3 Spice Model v1.0M Last Revised 2017/3/15 *---------- DMP45H4D9HK3 Spice Model ---------- .SUBCKT DMP45H4D9HK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 3.071 RS 30 3 0.001 RG 20 2 280.6 CGS 2 3 5.247E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.8385 KAPPA = 19.32 VTO = -4.541 .MODEL DCGD D CJO = 4E-010 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 2.777E-010 N = 1.379 RS = 4.441E-010 BV = 513 CJO = 9.289E-010 VJ = 0.6602 M = 0.7995 TT = 8.41E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP45H4D9HK3 Spice Model v1.0M Last Revised 2016/9/8 *---------- DMP510DL Spice Model ---------- .SUBCKT DMP510DL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.961 RS 30 3 0.001 RG 20 2 916 CGS 2 3 2.2E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.2606 KAPPA = 49.86 VTO = -1.522 .MODEL DCGD D CJO = 6.69E-012 VJ = 1 M = 0.1 .MODEL DSUB D IS = 9.14E-010 N = 1.637 RS = 0.1748 BV = 66.94 CJO = 1E-015 VJ = 0.1 M = 0.1851 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP510DL Spice Model v1.0 Last Revised 2015/9/24 *---------- DMP510DLQ Spice Model ---------- .SUBCKT DMP510DLQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.68 RS 30 3 0.0005 RG 20 2 239.5 CGS 2 3 3.64E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 0.6 KAPPA = 0.2 VTO = -1.601 .MODEL DCGD D CJO = 1.262E-011 VJ = 0.5881 M = 0.35 .MODEL DSUB D IS = 1.35E-009 N = 1.709 RS = 0.1049 BV = 75.14 + CJO = 8.704E-012 VJ = 0.6 M = 0.3339 XTI = 0 TT = 1.33E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/07/19 *---------- DMP510DLW Spice Model ---------- .SUBCKT DMP510DLW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.063 RS 30 3 0.001 RG 20 2 200 CGS 2 3 2.386E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3043 KAPPA = 19.32 VTO = -1.525 .MODEL DCGD D CJO = 8E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.884E-010 N = 1.607 RS = 0.1902 BV = 66 CJO = 1E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP510DLW Spice Model v1.0M Last Revised 2017/10/23 *---------- DMP56D0UFB Spice Model ---------- .SUBCKT DMP56D0UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 4.03 RS 30 3 0.001 RG 20 2 244 CGS 2 3 4.868E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.0008262 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9705 KAPPA = 1E-015 VTO = -0.8369 .MODEL DCGD D CJO = 1.069E-011 VJ = 0.01866 M = 0.2394 .MODEL DSUB D IS = 1.878E-007 N = 2.277 RS = 0.3052 BV = 95.86 + CJO = 4.824E-012 VJ = 0.1277 M = 0.2668 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP56D0UFB Spice Model v1.0 Last Revised 2014/2/20 *---------- DMP56D0UV Spice Model ---------- .SUBCKT DMP56D0UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 4.03 RS 30 3 0.001 RG 20 2 244 CGS 2 3 4.868E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.0008262 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9705 KAPPA = 1E-015 VTO = -0.8369 .MODEL DCGD D CJO = 1.069E-011 VJ = 0.01866 M = 0.2394 .MODEL DSUB D IS = 1.878E-007 N = 2.277 RS = 0.3052 BV = 95.86 + CJO = 4.824E-012 VJ = 0.1277 M = 0.2668 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP56D0UV Spice Model v1.0 Last Revised 2014/2/20 *---------- DMP58D0LFB Spice Model ---------- .SUBCKT DMP58D0LFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 4.315 RS 30 3 0.001 RG 20 2 150 CGS 2 3 2.573E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 800 VMAX = 4.005E+005 KP = 0.1511 ETA = 0.01292 +VTO = -1.594 TOX = 6E-008 NSUB = 1E+015 KAPPA = 1E-015 .MODEL DCGD D CJO = 4.271E-012 VJ = 0.07778 M = 0.1905 .MODEL DSUB D IS = 3.174E-009 N = 1.911 RS = 0.1816 BV = 55 CJO = 1.083E-011 VJ = 0.5802 M = 0.3745 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP58D0LFB Spice Model v1.0 Last Revised 2011/1/18 *SRC=DMP58D0SV;DMP58D0SV_DI;MOSFETs P;Enh;50.0V 0.160A 8.00ohms Diodes Inc. MOSFET .MODEL DMP58D0SV_DI PMOS( LEVEL=1 VTO=-2.10 KP=25.0m GAMMA=2.60 + PHI=.75 LAMBDA=133u RD=1.12 RS=1.12 + IS=80.0f PB=0.800 MJ=0.460 CBD=12.8p + CBS=15.4p CGSO=16.8n CGDO=14.0n CGBO=239n ) * -- Assumes default L=100U W=100U -- *---------- DMP58D1LV Spice Model ---------- .SUBCKT DMP58D1LV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.87 RS 30 3 0.0001 RG 20 2 240.4 CGS 2 3 3.528E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 0.75 KAPPA = 0.2 VTO = -1.737 .MODEL DCGD D CJO = 9.34E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1.3E-009 N = 1.703 RS = 0.09992 BV = 77.24 + CJO = 7.6E-012 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.35E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/11/10 *The model can only be used at 25 degC *---------- DMP58D1LVQ Spice Model ---------- .SUBCKT DMP58D1LVQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.87 RS 30 3 0.0001 RG 20 2 240.4 CGS 2 3 3.528E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 0.75 KAPPA = 0.2 VTO = -1.737 .MODEL DCGD D CJO = 9.34E-012 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 1.3E-009 N = 1.703 RS = 0.09992 BV = 77.24 + CJO = 7.6E-012 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.35E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/11/10 *The model can only be used at 25 degC *---------- DMP6018LPS Spice Model ---------- .SUBCKT DMP6018LPS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0056 RS 30 3 0.001 RG 20 2 7.09 CGS 2 3 3.438E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.95E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 700 VMAX = 1E+005 ETA = 0 + VTO = -2.4 TOX = 1E-007 NSUB = 1E+015 KP = 30 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.682E-010 VJ = 0.7421 M = 0.35 .MODEL DSUB D IS = 2.95E-009 N = 1.312 RS = 4.538E-008 BV = 66.71 + CJO = 3.749E-010 VJ = 0.6 M = 0.7629 XTI = 0 TT = 1.608E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/09/21 *---------- DMP6018LPSQ Spice Model ---------- .SUBCKT DMP6018LPSQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0056 RS 30 3 0.001 RG 20 2 7.09 CGS 2 3 3.438E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.95E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 700 VMAX = 1E+005 ETA = 0 + VTO = -2.4 TOX = 1E-007 NSUB = 1E+015 KP = 30 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.682E-010 VJ = 0.7421 M = 0.35 .MODEL DSUB D IS = 2.95E-009 N = 1.312 RS = 4.538E-008 BV = 66.71 + CJO = 3.749E-010 VJ = 0.6 M = 0.7629 XTI = 0 TT = 1.608E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/09/03 *---------- DMP6023LE Spice Model ---------- .SUBCKT DMP6023LE 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01765 RS 30 3 0.0005 RG 20 2 4.99 CGS 2 3 2.67E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.99E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 77 KAPPA = 0.2 VTO = -2.42 .MODEL DCGD D CJO = 7.065E-010 VJ = 0.5048 M = 0.3861 .MODEL DSUB D IS = 2.6E-009 N = 1.355 RS = 0.003114 BV = 66.8 + CJO = 2.986E-010 VJ = 0.7323 M = 0.5633 XTI = 0 TT = 9.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/22 *---------- DMP6023LEQ Spice Model ---------- .SUBCKT DMP6023LEQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01765 RS 30 3 0.0005 RG 20 2 4.99 CGS 2 3 2.67E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.99E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 77 KAPPA = 0.2 VTO = -2.42 .MODEL DCGD D CJO = 7.065E-010 VJ = 0.5048 M = 0.3861 .MODEL DSUB D IS = 2.6E-009 N = 1.355 RS = 0.003114 BV = 66.8 + CJO = 2.986E-010 VJ = 0.7323 M = 0.5633 XTI = 0 TT = 9.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/22 *---------- DMP6023LFG Spice Model ---------- .SUBCKT DMP6023LFG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01765 RS 30 3 0.0005 RG 20 2 4.99 CGS 2 3 2.67E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.99E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 77 KAPPA = 0.2 VTO = -2.42 .MODEL DCGD D CJO = 7.065E-010 VJ = 0.5048 M = 0.3861 .MODEL DSUB D IS = 2.6E-009 N = 1.355 RS = 0.003114 BV = 66.8 + CJO = 2.986E-010 VJ = 0.7323 M = 0.5633 XTI = 0 TT = 9.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/22 *---------- DMP6023LFGQ Spice Model ---------- .SUBCKT DMP6023LFGQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01765 RS 30 3 0.0005 RG 20 2 4.99 CGS 2 3 2.67E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.99E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 77 KAPPA = 0.2 VTO = -2.42 .MODEL DCGD D CJO = 7.065E-010 VJ = 0.5048 M = 0.3861 .MODEL DSUB D IS = 2.6E-009 N = 1.355 RS = 0.003114 BV = 66.8 + CJO = 2.986E-010 VJ = 0.7323 M = 0.5633 XTI = 0 TT = 9.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/22 *---------- DMP6023LSS Spice Model ---------- .SUBCKT DMP6023LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01765 RS 30 3 0.0005 RG 20 2 4.99 CGS 2 3 2.67E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.99E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 77 KAPPA = 0.2 VTO = -2.42 .MODEL DCGD D CJO = 7.065E-010 VJ = 0.5048 M = 0.3861 .MODEL DSUB D IS = 2.6E-009 N = 1.355 RS = 0.003114 BV = 66.8 + CJO = 2.986E-010 VJ = 0.7323 M = 0.5633 XTI = 0 TT = 9.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/22 *---------- DMP6050SFG Spice Model ---------- .SUBCKT DMP6050SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6050SFG Spice Model v1.0M Last Revised 2018/2/1 *---------- DMP6050SPS Spice Model ---------- .SUBCKT DMP6050SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6050SPS Spice Model v1.0M Last Revised 2018/1/3 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMP6050SPSW Spice Model ---------- .SUBCKT DMP6050SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6050SPSW Spice Model v1.0M Last Revised 2024/9/9 *---------- DMPH6050SSD Spice Model ---------- .SUBCKT DMPH6050SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 0.001 RG 20 2 11.79 CGS 2 3 1.409E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.05 KAPPA = 19.32 VTO = -2.527 .MODEL DCGD D CJO = 3.258E-010 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 2.383E-010 N = 1.262 RS = 0.009525 BV = 65 CJO = 1.973E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SSD Spice Model v1.0 Last Revised 2015/6/17 *---------- DMP6051SFVW Spice Model ---------- .SUBCKT DMP6051SFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP6051SFVWQ Spice Model ---------- .SUBCKT DMP6051SFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP6051SSD Spice Model ---------- .SUBCKT DMP6051SSD 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP6051SSDQ Spice Model ---------- .SUBCKT DMP6051SSDQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP6051SSS Spice Model ---------- .SUBCKT DMP6051SSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP6051SSSQ Spice Model ---------- .SUBCKT DMP6051SSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP610DL Spice Model ---------- .SUBCKT DMP610DL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.063 RS 30 3 0.001 RG 20 2 200 CGS 2 3 2.386E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3043 KAPPA = 19.32 VTO = -1.525 .MODEL DCGD D CJO = 8E-012 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.884E-010 N = 1.607 RS = 0.1902 BV = 66 CJO = 1E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP610DL Spice Model v1.0M Last Revised 2017/10/23 *---------- DMP610DLQ Spice Model ---------- .SUBCKT DMP610DLQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.68 RS 30 3 0.0005 RG 20 2 242.6 CGS 2 3 3.64E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 0.64 KAPPA = 0.2 VTO = -1.601 .MODEL DCGD D CJO = 1.262E-011 VJ = 0.5881 M = 0.35 .MODEL DSUB D IS = 1.35E-009 N = 1.709 RS = 0.1049 BV = 75.21 + CJO = 8.704E-012 VJ = 0.6 M = 0.3339 XTI = 0 TT = 1.33E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/07/19 *---------- DMP6110SFDF Spice Model ---------- .SUBCKT DMP6110SFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.056 RS 30 3 0.0005 RG 20 2 13.7 CGS 2 3 9.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 20.2 KAPPA = 0.2 VTO = -2.028 .MODEL DCGD D CJO = 1.85E-010 VJ = 0.5457 M = 0.35 .MODEL DSUB D IS = 8E-011 N = 1.208 RS = 0.01297 BV = 66.15 + CJO = 1.13E-010 VJ = 0.8729 M = 0.6036 XTI = 0 TT = 6.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *---------- DMP6110SFDFQ Spice Model ---------- .SUBCKT DMP6110SFDFQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.056 RS 30 3 0.0005 RG 20 2 13.7 CGS 2 3 9.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 20.2 KAPPA = 0.2 VTO = -2.028 .MODEL DCGD D CJO = 1.85E-010 VJ = 0.5457 M = 0.35 .MODEL DSUB D IS = 8E-011 N = 1.208 RS = 0.01297 BV = 66.15 + CJO = 1.13E-010 VJ = 0.8729 M = 0.6036 XTI = 0 TT = 6.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *---------- DMP6110SSD Spice Model ---------- .SUBCKT DMP6110SSD 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.056 RS 30 3 0.0005 RG 20 2 13.7 CGS 2 3 9.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 20.2 KAPPA = 0.2 VTO = -2.028 .MODEL DCGD D CJO = 1.85E-010 VJ = 0.5457 M = 0.35 .MODEL DSUB D IS = 8E-011 N = 1.208 RS = 0.01297 BV = 66.15 + CJO = 1.13E-010 VJ = 0.8729 M = 0.6036 XTI = 0 TT = 6.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *---------- DMP6110SSDQ Spice Model ---------- .SUBCKT DMP6110SSDQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.056 RS 30 3 0.0005 RG 20 2 13.7 CGS 2 3 9.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 20.2 KAPPA = 0.2 VTO = -2.028 .MODEL DCGD D CJO = 1.85E-010 VJ = 0.5457 M = 0.35 .MODEL DSUB D IS = 8E-011 N = 1.208 RS = 0.01297 BV = 66.15 + CJO = 1.13E-010 VJ = 0.8729 M = 0.6036 XTI = 0 TT = 6.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *---------- DMP6110SSS Spice Model ---------- .SUBCKT DMP6110SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04464 RS 30 3 0.001 RG 20 2 13 CGS 2 3 1E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 .MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 .MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 + BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6110SSS Spice Model v1.0 Last Revised 2018/2/1 *---------- DMP6110SSSQ Spice Model ---------- .SUBCKT DMP6110SSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04464 RS 30 3 0.001 RG 20 2 13 CGS 2 3 1E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 .MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 .MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 + BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6110SSSQ Spice Model v1.0M Last Revised 2016/03/17 *---------- DMP6110SVT Spice Model ---------- .SUBCKT DMP6110SVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.056 RS 30 3 0.0005 RG 20 2 13.7 CGS 2 3 9.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 20.2 KAPPA = 0.2 VTO = -2.028 .MODEL DCGD D CJO = 1.85E-010 VJ = 0.5457 M = 0.35 .MODEL DSUB D IS = 8E-011 N = 1.208 RS = 0.01297 BV = 66.15 + CJO = 1.13E-010 VJ = 0.8729 M = 0.6036 XTI = 0 TT = 6.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *---------- DMP6110SVTQ Spice Model ---------- .SUBCKT DMP6110SVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.056 RS 30 3 0.0005 RG 20 2 13.7 CGS 2 3 9.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 20.2 KAPPA = 0.2 VTO = -2.028 .MODEL DCGD D CJO = 1.85E-010 VJ = 0.5457 M = 0.35 .MODEL DSUB D IS = 8E-011 N = 1.208 RS = 0.01297 BV = 66.15 + CJO = 1.13E-010 VJ = 0.8729 M = 0.6036 XTI = 0 TT = 6.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *---------- DMP6111SVT Spice Model ---------- .SUBCKT DMP6111SVT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.08125 RS 30 3 0.0001 RG 20 2 5.63 CGS 2 3 1.303E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.44E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 15.32 KAPPA = 0.2 VTO = -2.634 .MODEL DCGD D CJO = 2.152E-010 VJ = 0.5 M = 0.3911 .MODEL DSUB D IS = 1.793E-009 N = 1.497 RS = 0.007584 BV = 71.35 + CJO = 1.129E-010 VJ = 0.6 M = 0.5023 XTI = 0 TT = 1.146E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/11/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP6111SVTQ Spice Model ---------- .SUBCKT DMP6111SVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.08125 RS 30 3 0.0001 RG 20 2 5.63 CGS 2 3 1.303E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.44E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 15.32 KAPPA = 0.2 VTO = -2.634 .MODEL DCGD D CJO = 2.152E-010 VJ = 0.5 M = 0.3911 .MODEL DSUB D IS = 1.793E-009 N = 1.497 RS = 0.007584 BV = 71.35 + CJO = 1.129E-010 VJ = 0.6 M = 0.5023 XTI = 0 TT = 1.146E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/11/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMP6180SK3 Spice Model ---------- .SUBCKT DMP6180SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.056 RS 30 3 0.0005 RG 20 2 13.7 CGS 2 3 9.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 20.2 KAPPA = 0.2 VTO = -2.028 .MODEL DCGD D CJO = 1.85E-010 VJ = 0.5457 M = 0.35 .MODEL DSUB D IS = 8E-011 N = 1.208 RS = 0.01297 BV = 66.15 + CJO = 1.13E-010 VJ = 0.8729 M = 0.6036 XTI = 0 TT = 6.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *---------- DMP6180SK3Q Spice Model ---------- .SUBCKT DMP6180SK3Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.056 RS 30 3 0.0005 RG 20 2 13.7 CGS 2 3 9.7E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 600 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 20.2 KAPPA = 0.2 VTO = -2.028 .MODEL DCGD D CJO = 1.85E-010 VJ = 0.5457 M = 0.35 .MODEL DSUB D IS = 8E-011 N = 1.208 RS = 0.01297 BV = 66.15 + CJO = 1.13E-010 VJ = 0.8729 M = 0.6036 XTI = 0 TT = 6.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *---------- DMP6185SE Spice Model ---------- .SUBCKT DMP6185SE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03231 RS 30 3 0.001 RG 20 2 16.84 CGS 2 3 7.103E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 30.52 KAPPA = 19.32 VTO = -0.9885 .MODEL DCGD D CJO = 2.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.567E-009 N = 1.266 RS = 0.05804 BV = 25 CJO = 3.071E-011 VJ = 0.8 M = 0.6 TT=1.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6185SE Spice Model v1.0M Last Revised 2016/5/17 *---------- DMP6185SEQ Spice Model ---------- .SUBCKT DMP6185SEQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03231 RS 30 3 0.001 RG 20 2 16.84 CGS 2 3 7.103E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 30.52 KAPPA = 19.32 VTO = -0.9885 .MODEL DCGD D CJO = 2.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.567E-009 N = 1.266 RS = 0.05804 BV = 25 CJO = 3.071E-011 VJ = 0.8 M = 0.6 TT=1.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6185SEQ Spice Model v1.0M Last Revised 2017/6/26 *---------- DMP6185SK3 Spice Model ---------- .SUBCKT DMP6185SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03231 RS 30 3 0.001 RG 20 2 16.84 CGS 2 3 7.103E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 30.52 KAPPA = 19.32 VTO = -0.9885 .MODEL DCGD D CJO = 2.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.567E-009 N = 1.266 RS = 0.05804 BV = 25 CJO = 3.071E-011 VJ = 0.8 M = 0.6 TT=1.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6185SK3 Spice Model v1.0M Last Revised 2018/2/1 *---------- DMP6250SE Spice Model ---------- .SUBCKT DMP6250SE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1006 RS 30 3 0.001 RG 20 2 13.07 CGS 2 3 5.928E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 6.038 KAPPA = 19.32 VTO = -2.241 .MODEL DCGD D CJO = 8.101E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.484E-010 N = 1.368 RS = 0.02186 BV = 60 CJO = 7.164E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6250SE Spice Model v1.0 Last Revised 2015/12/03 *---------- DMP6250SEQ Spice Model ---------- .SUBCKT DMP6250SEQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.125 RS 30 3 0.001 RG 20 2 13.61 CGS 2 3 4.85E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.16E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 VTO = -2.22 + TOX = 1E-007 NSUB = 1E+016 KP = 11.8 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.55E-010 VJ = 0.5 M = 0.51 .MODEL DSUB D IS = 8E-011 N = 1.28 RS = 0.014 BV = 68.8 + CJO = 5.8E-011 VJ = 0.8 M = 0.6 XTI = 0 TT = 4.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/06/09 *---------- DMP6250SFDF Spice Model ---------- .SUBCKT DMP6250SFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.09743 RS 30 3 0.001 RG 20 2 11.59 CGS 2 3 5.209E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 6.948 KAPPA = 19.32 VTO = -2.146 .MODEL DCGD D CJO = 2.696E-010 VJ = 0.7998 M = 0.6 .MODEL DSUB D IS = 2.279E-010 N = 1.306 RS = 0.02188 BV = 67.75 + CJO = 2.175E-010 VJ = 0.8 M = 0.6 TT = 4.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6250SFDF Spice Model v1.0J Last Revised 2018/06/20 *---------- DMP6350S Spice Model ---------- .SUBCKT DMP6350S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2153 RS 30 3 0.001 RG 20 2 16.48 CGS 2 3 2.042E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.79 KAPPA = 19.32 VTO = -2.031 .MODEL DCGD D CJO = 6.908E-011 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 1.229E-008 N = 1.701 RS = 0.02915 BV = 68 CJO = 2.66E-011 VJ = 0.8 M = 0.6 TT=4E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6350S Spice Model v1.0M Last Revised 2016/4/29 *---------- DMP65H11D0HSS Spice Model ---------- .SUBCKT DMP65H11D0HSS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : A M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 8.8 RS 30 3 0.001 RG 20 2 11.94 CGS 2 3 6.5E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 424 VMAX = 1E+005 ETA = 0 VTO = -3.489 + TOX = 1E-007 + NSUB = 1.004E+014 KP = 1.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.9 .MODEL DSUB D IS = 1.7E-008 N = 1.714 RS = 4.441E-010 BV = 741.4 + CJO = 5.107E-010 VJ = 0.6 M = 0.6 XTI = 0 TT = 7.725E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/06/17 *---------- DMP65H13D0HSS Spice Model ---------- .SUBCKT DMP65H13D0HSS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 10 RS 30 3 0.001 RG 20 2 12.74 CGS 2 3 5.706E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 424 VMAX = 1E+005 ETA = 0 VTO = -3.489 + TOX = 1E-007 NSUB = 1.004E+014 KP = 1.15 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.4E-010 VJ = 0.5 M = 0.8358 .MODEL DSUB D IS = 1E-008 N = 1.667 RS = 0.001642 BV = 740.7 + CJO = 5.107E-010 VJ = 0.6 M = 0.6905 XTI = 0 TT = 8.48E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/06/16 *---------- DMP65H9D0HSS Spice Model ---------- .SUBCKT DMP65H9D0HSS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : A M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 7.4 RS 30 3 0.001 RG 20 2 10.84 CGS 2 3 7.3E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.3E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 424 VMAX = 1E+005 ETA = 0 VTO = -3.389 + TOX = 1E-007 + NSUB = 1.004E+014 KP = 1.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4E-010 VJ = 0.6 M = 0.9 .MODEL DSUB D IS = 1.3E-008 N = 1.665 RS = 4.337E-009 BV = 745.4 + CJO = 8E-010 VJ = 0.6 M = 0.65 XTI = 0 TT = 8.55E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/06/17 *---------- DMP65H9D0HSS Spice Model ---------- .SUBCKT DMP65H9D0HSS 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : A M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 7.4 RS 30 3 0.001 RG 20 2 10.84 CGS 2 3 7.3E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.3E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 424 VMAX = 1E+005 ETA = 0 VTO = -3.389 + TOX = 1E-007 + NSUB = 1.004E+014 KP = 1.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4E-010 VJ = 0.6 M = 0.9 .MODEL DSUB D IS = 1.3E-008 N = 1.665 RS = 4.337E-009 BV = 745.4 + CJO = 8E-010 VJ = 0.6 M = 0.65 XTI = 0 TT = 8.55E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/06/17 *---------- DMP68D0LFB Spice Model ---------- .SUBCKT DMP68D0LFB 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.7 RS 30 3 0.001 RG 20 2 1.85 CGS 2 3 3.515E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.89E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 VTO = -1.95 + TOX = 1E-007 NSUB = 1E+015 KP = 0.75 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.051E-011 VJ = 0.5 M = 0.3977 .MODEL DSUB D IS = 3E-010 N = 1.546 RS = 0.1492 BV = 73.6 + CJO = 9.91E-012 VJ = 0.735 M = 0.4456 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/07/20 *---------- DMP68D1LQ Spice Model ---------- .SUBCKT DMP68D1LQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.65 RS 30 3 0.001 RG 20 2 225.09 CGS 2 3 3.605E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 + VTO = -1.7 TOX = 1E-007 NSUB = 1E+015 KP = 0.65 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.9E-011 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 3E-010 N = 1.548 RS = 0.1238 BV = 73 + CJO = 8.594E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2023/11/17 *---------- DMP68D1LFB Spice Model ---------- .SUBCKT DMP68D1LFB 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.65 RS 30 3 0.001 RG 20 2 225.09 CGS 2 3 3.605E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 + VTO = -1.7 TOX = 1E-007 NSUB = 1E+015 KP = 0.65 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.9E-011 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 3E-010 N = 1.548 RS = 0.1238 BV = 73 + CJO = 8.594E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/03/25 *---------- DMP68D1LQ Spice Model ---------- .SUBCKT DMP68D1LQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.65 RS 30 3 0.001 RG 20 2 225.09 CGS 2 3 3.605E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 + VTO = -1.7 TOX = 1E-007 NSUB = 1E+015 KP = 0.65 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.9E-011 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 3E-010 N = 1.548 RS = 0.1238 BV = 73 + CJO = 8.594E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2023/11/17 *---------- DMP68D1LV Spice Model ---------- .SUBCKT DMP68D1LV 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.65 RS 30 3 0.001 RG 20 2 225.09 CGS 2 3 3.605E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 + VTO = -1.7 TOX = 1E-007 NSUB = 1E+015 KP = 0.65 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.9E-011 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 3E-010 N = 1.548 RS = 0.1238 BV = 73 + CJO = 8.594E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2023/11/17 *---------- DMP68D1LVQ Spice Model ---------- .SUBCKT DMP68D1LVQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.65 RS 30 3 0.001 RG 20 2 225.09 CGS 2 3 3.605E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 + VTO = -1.7 TOX = 1E-007 NSUB = 1E+015 KP = 0.65 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.9E-011 VJ = 0.8 M = 0.35 .MODEL DSUB D IS = 3E-010 N = 1.548 RS = 0.1238 BV = 73 + CJO = 8.594E-012 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2023/11/17 *---------- DMPH1006UPS Spice Model ---------- .SUBCKT DMPH1006UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001194 RS 30 3 0.001 RG 20 2 3.22 CGS 2 3 5.408E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 175.4 KAPPA = 19.32 VTO = -0.9124 .MODEL DCGD D CJO = 4.636E-009 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.613E-008 N = 1.106 RS = 0.007199 BV = 18 CJO = 6.91E-010 VJ = 0.8 M = 0.6 TT = 1.343E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH1006UPS Spice Model v1.0M Last Revised 2016/12/13 *---------- DMPH1006UPSQ Spice Model ---------- .SUBCKT DMPH1006UPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001194 RS 30 3 0.001 RG 20 2 3.22 CGS 2 3 5.408E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 175.4 KAPPA = 19.32 VTO = -0.9124 .MODEL DCGD D CJO = 4.636E-009 VJ = 0.6 M = 0.6 .MODEL DSUB D IS = 1.613E-008 N = 1.106 RS = 0.007199 BV = 18 CJO = 6.91E-010 VJ = 0.8 M = 0.6 TT = 1.343E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH1006UPSQ Spice Model v1.0M Last Revised 2016/12/13 *---------- DMPH16M1UPSW Spice Model ---------- .SUBCKT DMPH16M1UPSW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0031 RS 30 3 0.001 RG 20 2 2.05 CGS 2 3 5E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.02E-008 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 VTO = -0.99 + TOX = 1E-007 NSUB = 1E+014 KP = 300 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5E-009 VJ = 0.6 M = 0.8 .MODEL DSUB D IS = 6.7E-009 N = 1.11 RS = 0.004 BV = 26.23 + CJO = 1.568E-009 VJ = 0.7 M = 0.7807 XTI = 0 TT = 1.13E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/10/01 *---------- DMPH2040UVTQ Spice Model ---------- .SUBCKT DMPH2040UVTQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01868 RS 30 3 0.0001 RG 20 2 6.42 CGS 2 3 7.574E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.168E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 453 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 35.31 KAPPA = 0.2 VTO = -1.116 .MODEL DCGD D CJO = 5.688E-010 VJ = 0.5 M = 0.5644 .MODEL DSUB D IS = 2.06E-009 N = 1.366 RS = 0.01264 BV = 23.2 + CJO = 1.327E-010 VJ = 0.6 M = 0.5784 XTI = 0 TT = 4.692E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/05/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH3010LK3 Spice Model ---------- .SUBCKT DMPH3010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002936 RS 30 3 0.001 RG 20 2 1.28 CGS 2 3 5.724E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 .MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 .MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 + BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH3010LK3 Spice Model v1.0 Last Revised 2014/09/10 *---------- DMPH3010LK3Q Spice Model ---------- .SUBCKT DMPH3010LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002936 RS 30 3 0.001 RG 20 2 1.28 CGS 2 3 5.724E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 .MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 .MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 + BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH3010LK3Q Spice Model v1.0 Last Revised 2014/09/10 *---------- DMPH3010LPS Spice Model ---------- .SUBCKT DMPH3010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002936 RS 30 3 0.001 RG 20 2 1.28 CGS 2 3 5.724E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 .MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 .MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 + BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH3010LPS Spice Model v1.0 Last Revised 2014/09/10 *---------- DMPH3010LPSQ Spice Model ---------- .SUBCKT DMPH3010LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002936 RS 30 3 0.001 RG 20 2 1.28 CGS 2 3 5.724E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 .MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 .MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 + BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH3010LPSQ Spice Model v1.0 Last Revised 2014/09/10 *---------- DMPH33M8SPSW Spice Model ---------- .SUBCKT DMPH33M8SPSW 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 22.57 CGS 2 3 4.04E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.05E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 VTO = -3 + TOX = 1E-007 NSUB = 1E+016 KP = 128.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.15E-009 VJ = 0.8 M = 0.3 .MODEL DSUB D IS = 2E-008 N = 1.4 RS = 1E-006 BV = 35.54 + CJO = 2.235E-009 VJ = 0.8 M = 0.4607 XTI = 0 TT = 1.702E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/01/13 *---------- DMPH33M8SPSWQ Spice Model ---------- .SUBCKT DMPH33M8SPSWQ 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : B M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 22.57 CGS 2 3 4.04E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.05E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 VTO = -3 + TOX = 1E-007 NSUB = 1E+016 KP = 128.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.15E-009 VJ = 0.8 M = 0.3 .MODEL DSUB D IS = 2E-008 N = 1.4 RS = 1E-006 BV = 35.54 + CJO = 2.235E-009 VJ = 0.8 M = 0.4607 XTI = 0 TT = 1.702E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/01/13 *---------- DMPH4009SPSW Spice Model ---------- .SUBCKT DMPH4009SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004873 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.978E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 92.25 KAPPA = 0.2 VTO = -2.246 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 5.9E-009 N = 1.406 RS = 0.001107 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4009SPSWQ Spice Model ---------- .SUBCKT DMPH4009SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004873 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.978E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 92.25 KAPPA = 0.2 VTO = -2.246 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 5.9E-009 N = 1.406 RS = 0.001107 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4009SSS Spice Model ---------- .SUBCKT DMPH4009SSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004873 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.978E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 92.25 KAPPA = 0.2 VTO = -2.246 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 5.9E-009 N = 1.406 RS = 0.001107 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4009SSSQ Spice Model ---------- .SUBCKT DMPH4009SSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.004873 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.978E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 92.25 KAPPA = 0.2 VTO = -2.246 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 5.9E-009 N = 1.406 RS = 0.001107 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4011SK3 Spice Model ---------- .SUBCKT DMPH4011SK3 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0023 RS 30 3 0.001 RG 20 2 11.69 CGS 2 3 4.721E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.36E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 + VTO = -2.24 TOX = 1E-007 NSUB = 1E+015 KP = 65 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.008E-009 VJ = 0.6661 M = 0.455 .MODEL DSUB D IS = 3.1E-009 N = 1.361 RS = 6.491E-009 BV = 46.36 + CJO = 1.194E-009 VJ = 0.6634 M = 0.6174 XTI = 0 TT = 1.85E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/12 *---------- DMPH4011SK3Q Spice Model ---------- .SUBCKT DMPH4011SK3Q 10 20 30 * TERMINALS : D G S * MODLE FORMAT : SPICE3 * Editor : J M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0023 RS 30 3 0.001 RG 20 2 11.69 CGS 2 3 4.721E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.36E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 500 VMAX = 1E+005 ETA = 0 + VTO = -2.24 TOX = 1E-007 NSUB = 1E+015 KP = 65 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.008E-009 VJ = 0.6661 M = 0.455 .MODEL DSUB D IS = 3.1E-009 N = 1.361 RS = 6.491E-009 BV = 46.36 + CJO = 1.194E-009 VJ = 0.6634 M = 0.6174 XTI = 0 TT = 1.85E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/05/12 *---------- DMPH4013SK3 Spice Model ---------- .SUBCKT DMPH4013SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007125 RS 30 3 0.001 RG 20 2 3.47 CGS 2 3 3.9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 78.86 KAPPA = 19.32 VTO = -2.7 .MODEL DCGD D CJO = 1.3E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.302E-010 N = 1.242 RS = 0.002214 BV = 45.03 + CJO = 6.999E-010 VJ = 0.8 M = 0.6 TT = 9.78E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4013SK3 Spice Model v1.0M Last Revised 2018/05/01 *---------- DMPH4013SK3Q Spice Model ---------- .SUBCKT DMPH4013SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007125 RS 30 3 0.001 RG 20 2 3.47 CGS 2 3 3.9E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 78.86 KAPPA = 19.32 VTO = -2.7 .MODEL DCGD D CJO = 1.3E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.302E-010 N = 1.242 RS = 0.002214 BV = 45.03 + CJO = 6.999E-010 VJ = 0.8 M = 0.6 TT = 9.78E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4013SK3Q Spice Model v1.0M Last Revised 2018/05/01 *---------- DMPH4013SPS Spice Model ---------- .SUBCKT DMPH4013SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4013SPS Spice Model v1.0M Last Revised 2019/12/30 *---------- DMPH4013SPSQ Spice Model ---------- .SUBCKT DMPH4013SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4013SPSQ Spice Model v1.0M Last Revised 2019/12/30 *---------- DMPH4013SPSW Spice Model ---------- .SUBCKT DMPH4013SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4013SPSW Spice Model v1.0M Last Revised 2019/12/30 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMPH4013SPSWQ Spice Model ---------- .SUBCKT DMPH4013SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4013SPSWQ Spice Model v1.0M Last Revised 2019/12/30 *---------- DMPH4015SK3 Spice Model ---------- .SUBCKT DMPH4015SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4015SK3 Spice Model v1.0M Last Revised 2016/3/31 *---------- DMPH4015SK3Q Spice Model ---------- .SUBCKT DMPH4015SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4010SK3Q Spice Model v1.0M Last Revised 2016/3/31 *---------- DMPH4015SPS Spice Model ---------- .SUBCKT DMPH4015SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4015SPS Spice Model v1.0M Last Revised 2016/3/31 *---------- DMPH4015SPSQ Spice Model ---------- .SUBCKT DMPH4015SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4015SPSQ Spice Model v1.0M Last Revised 2016/3/31 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMPH4015SPSW Spice Model ---------- .SUBCKT DMPH4015SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4015SPSW Spice Model v1.0M Last Revised 2016/3/31 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMPH4015SPSWQ Spice Model ---------- .SUBCKT DMPH4015SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4015SPSWQ Spice Model v1.0M Last Revised 2016/3/31 *---------- DMPH4015SSS Spice Model ---------- .SUBCKT DMPH4015SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4015SSS Spice Model v1.0M Last Revised 2016/3/31 *---------- DMPH4015SSSQ Spice Model ---------- .SUBCKT DMPH4015SSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4015SSSQ Spice Model v1.0M Last Revised 2016/3/31 *---------- DMPH4016SK3 Spice Model ---------- .SUBCKT DMPH4016SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4016SK3Q Spice Model ---------- .SUBCKT DMPH4016SK3Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4016SPSW Spice Model ---------- .SUBCKT DMPH4016SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4016SPSWQ Spice Model ---------- .SUBCKT DMPH4016SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4016SSS Spice Model ---------- .SUBCKT DMPH4016SSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4016SSSQ Spice Model ---------- .SUBCKT DMPH4016SSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003507 RS 30 3 0.0001 RG 20 2 7.02 CGS 2 3 5.764E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.977E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 100 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1.817E+015 KP = 95.26 KAPPA = 0.2 VTO = -2.266 .MODEL DCGD D CJO = 2.4E-009 VJ = 0.5 M = 0.4547 .MODEL DSUB D IS = 6.9E-009 N = 1.415 RS = 0.0008018 BV = 46.61 + CJO = 8.5E-010 VJ = 0.6 M = 0.6237 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4023SK3 Spice Model ---------- .SUBCKT DMPH4023SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007809 RS 30 3 0.001 RG 20 2 13.81 CGS 2 3 1E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 9.718 KAPPA = 19.32 VTO = -2.6 .MODEL DCGD D CJO = 6.512E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.327E-010 N = 1.229 RS = 0.005116 BV = 47.24 + CJO = 1.15E-009 VJ = 0.8 M = 0.6 TT = 8.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4023SK3 Spice Model v1.0M Last Revised 2018/05/01 *---------- DMPH4023SK3Q Spice Model ---------- .SUBCKT DMPH4023SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007809 RS 30 3 0.001 RG 20 2 13.81 CGS 2 3 1E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 9.718 KAPPA = 19.32 VTO = -2.6 .MODEL DCGD D CJO = 6.512E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.327E-010 N = 1.229 RS = 0.005116 BV = 47.24 + CJO = 1.15E-009 VJ = 0.8 M = 0.6 TT = 8.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4023SK3Q Spice Model v1.0M Last Revised 2018/05/01 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMPH4023SPDW Spice Model ---------- .SUBCKT DMPH4023SPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01483 RS 30 3 0.0001 RG 20 2 13.81 CGS 2 3 1.086E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.12E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 17.47 KAPPA = 0.2 VTO = -2.749 .MODEL DCGD D CJO = 2.736E-010 VJ = 0.5182 M = 0.2439 .MODEL DSUB D IS = 1.36E-009 N = 1.301 RS = 0.007124 BV = 47.24 + CJO = 8.618E-010 VJ = 0.9 M = 0.5008 XTI = 0 TT = 8.905E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/11/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4023SPDWQ Spice Model ---------- .SUBCKT DMPH4023SPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01483 RS 30 3 0.0001 RG 20 2 13.81 CGS 2 3 1.086E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.12E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 17.47 KAPPA = 0.2 VTO = -2.749 .MODEL DCGD D CJO = 2.736E-010 VJ = 0.5182 M = 0.2439 .MODEL DSUB D IS = 1.36E-009 N = 1.301 RS = 0.007124 BV = 47.24 + CJO = 8.618E-010 VJ = 0.9 M = 0.5008 XTI = 0 TT = 8.905E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/11/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4025SFVWQ Spice Model ---------- .SUBCKT DMPH4025SFVWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4025SFVWQ Spice Model v1.0 Last Revised 2018/5/29 *---------- DMPH4026SFVW Spice Model ---------- .SUBCKT DMPH4026SFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0078 RS 30 3 0.0001 RG 20 2 2.2 CGS 2 3 1.74E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.023E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 46.42 KAPPA = 0.2 VTO = -1.576 .MODEL DCGD D CJO = 9.95E-010 VJ = 0.5 M = 0.4328 .MODEL DSUB D IS = 6.6E-009 N = 1.499 RS = 0.002228 BV = 43.9 + CJO = 2.8E-010 VJ = 0.6 M = 0.5753 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/05/08 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4026SFVWQ Spice Model ---------- .SUBCKT DMPH4026SFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0078 RS 30 3 0.0001 RG 20 2 2.2 CGS 2 3 1.74E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.023E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+005 ETA = 0 IS = 0 + TOX = 1E-007 NSUB = 1E+015 KP = 46.42 KAPPA = 0.2 VTO = -1.576 .MODEL DCGD D CJO = 9.95E-010 VJ = 0.5 M = 0.4328 .MODEL DSUB D IS = 6.6E-009 N = 1.499 RS = 0.002228 BV = 43.9 + CJO = 2.8E-010 VJ = 0.6 M = 0.5753 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/05/08 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH4029LFG Spice Model ---------- .SUBCKT DMPH4029LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4029LFG Spice Model v1.0M Last Revised 2019/1/25 *---------- DMPH4029LFGQ Spice Model ---------- .SUBCKT DMPH4029LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH4029LFGQ Spice Model v1.0M Last Revised 2019/1/25 *---------- DMPH6023SK3 Spice Model ---------- .SUBCKT DMPH6023SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01605 RS 30 3 0.001 RG 20 2 4.99 CGS 2 3 2.839E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.75E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 56.71 KAPPA = 49.86 VTO = -2.33 .MODEL DCGD D CJO = 8.252E-010 VJ = 1 M = 0.5463 .MODEL DSUB D IS = 2.343E-010 N = 1.216 RS = 0.003391 BV = 71.9 CJO = 1.513E-010 VJ = 0.1 M = 0.1851 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6023SK3 Spice Model v1.0 Last Revised 2016/8/3 *---------- DMPH6023SK3Q Spice Model ---------- .SUBCKT DMPH6023SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01605 RS 30 3 0.001 RG 20 2 4.99 CGS 2 3 2.839E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.75E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 56.71 KAPPA = 49.86 VTO = -2.33 .MODEL DCGD D CJO = 8.252E-010 VJ = 1 M = 0.5463 .MODEL DSUB D IS = 2.343E-010 N = 1.216 RS = 0.003391 BV = 71.9 CJO = 1.513E-010 VJ = 0.1 M = 0.1851 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6023SK3Q Spice Model v1.0 Last Revised 2016/8/3 *---------- DMPH6050SFGQ Spice Model ---------- .SUBCKT DMPH6050SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SFGQ Spice Model v1.0M Last Revised 2018/1/16 *---------- DMPH6050SK3 Spice Model ---------- .SUBCKT DMPH6050SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 0.001 RG 20 2 11.79 CGS 2 3 1.409E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.05 KAPPA = 19.32 VTO = -2.527 .MODEL DCGD D CJO = 3.258E-010 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 2.383E-010 N = 1.262 RS = 0.009525 BV = 65 CJO = 1.973E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SK3 Spice Model v1.0M Last Revised 2016/1/28 *---------- DMPH6050SK3Q Spice Model ---------- .SUBCKT DMPH6050SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03 RS 30 3 0.001 RG 20 2 11.79 CGS 2 3 1.409E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.05 KAPPA = 19.32 VTO = -2.527 .MODEL DCGD D CJO = 3.258E-010 VJ = 0.7999 M = 0.6 .MODEL DSUB D IS = 2.383E-010 N = 1.262 RS = 0.009525 BV = 65 CJO = 1.973E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SK3Q Spice Model v1.0 Last Revised 2015/6/15 *---------- DMPH6050SPD Spice Model ---------- .SUBCKT DMPH6050SPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SPD Spice Model v1.0M Last Revised 2016/10/7 *---------- DMPH6050SPDQ Spice Model ---------- .SUBCKT DMPH6050SPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SPDQ Spice Model v1.0M Last Revised 2016/10/7 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMPH6050SPDW Spice Model ---------- .SUBCKT DMPH6050SPDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SPDW Spice Model v1.0M Last Revised 2024/9/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMPH6050SPDWQ Spice Model ---------- .SUBCKT DMPH6050SPDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SPDWQ Spice Model v1.0M Last Revised 2023/7/26 *---------- DMPH6050SSD Spice Model ---------- .SUBCKT DMPH6050SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SSD Spice Model v1.0M Last Revised 2016/10/7 *---------- DMPH6050SSDQ Spice Model ---------- .SUBCKT DMPH6050SSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02655 RS 30 3 0.001 RG 20 2 15.97 CGS 2 3 1.62E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6050SSDQ Spice Model v1.0M Last Revised 2016/10/7 *---------- DMPH6051SFVW Spice Model ---------- .SUBCKT DMPH6051SFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH6051SFVWQ Spice Model ---------- .SUBCKT DMPH6051SFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH6051SSD Spice Model ---------- .SUBCKT DMPH6051SSD 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH6051SSDQ Spice Model ---------- .SUBCKT DMPH6051SSDQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH6051SSS Spice Model ---------- .SUBCKT DMPH6051SSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH6051SSSQ Spice Model ---------- .SUBCKT DMPH6051SSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04127 RS 30 3 0.0001 RG 20 2 3.54 CGS 2 3 2.107E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.202E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 250 VMAX = 1E+005 ETA = 0 + IS = 0 TOX = 1E-007 NSUB = 1E+014 KP = 20.94 KAPPA = 0.2 VTO = -2.461 .MODEL DCGD D CJO = 3.197E-010 VJ = 0.5002 M = 0.35 .MODEL DSUB D IS = 1.859E-008 N = 1.607 RS = 0.003441 BV = 69.89 + CJO = 1.666E-010 VJ = 0.29 M = 0.4351 XTI = 0 TT = 1.167E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMPH6250S Spice Model ---------- .SUBCKT DMPH6250S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.09743 RS 30 3 0.001 RG 20 2 11.59 CGS 2 3 5.209E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 6.948 KAPPA = 19.32 VTO = -2.146 .MODEL DCGD D CJO = 2.696E-010 VJ = 0.7998 M = 0.6 .MODEL DSUB D IS = 2.279E-010 N = 1.306 RS = 0.02188 BV = 67.75 + CJO = 2.175E-010 VJ = 0.8 M = 0.6 TT = 4.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6250S Spice Model v1.0J Last Revised 2019/06/05 *---------- DMPH6250SQ Spice Model ---------- .SUBCKT DMPH6250SQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.09743 RS 30 3 0.001 RG 20 2 11.59 CGS 2 3 5.209E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 6.948 KAPPA = 19.32 VTO = -2.146 .MODEL DCGD D CJO = 2.696E-010 VJ = 0.7998 M = 0.6 .MODEL DSUB D IS = 2.279E-010 N = 1.306 RS = 0.02188 BV = 67.75 + CJO = 2.175E-010 VJ = 0.8 M = 0.6 TT = 4.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMPH6250SQ Spice Model v1.0J Last Revised 2018/05/30 *---------- DMS2085LSD Spice Model ---------- .SUBCKT DMS2085LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04334 RS 30 3 0.001 RG 20 2 6.68 CGS 2 3 3.325E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.72E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 7.151 KAPPA = 19.32 VTO = -1.363 .MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.682E-010 N = 1.333 RS = 0.04404 BV = 31.32 + CJO = 2E-011 VJ = 0.8 M = 0.6 TT = 1.65E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMS2085LSD Spice Model v1.0J Last Revised 2018/08/13 *---------- DMS2095LFDB Spice Model ---------- .SUBCKT DMS2095LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02495 RS 30 3 0.001 RG 20 2 59.52 CGS 2 3 5.085E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 13.24 KAPPA = 19.32 VTO = -0.75 .MODEL DCGD D CJO = 3.912E-010 VJ = 0.6 M = 0.6032 .MODEL DSUB D IS = 1.447E-008 N = 0.9475 RS = 0.5063 BV = 23.77 + CJO = 1.322E-011 VJ = 0.8 M = 0.6 TT = 6.24E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMS2095LFDB Spice Model v1.0J Last Revised 2018/08/13 *---------- DMS2120LFWB Spice Model ---------- .SUBCKT DMS2120LFWB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *---------- SBR1U40LP Spice Model ---------- .SUBCKT SBR1U40LP 1 2 DS 1 2 SBR .MODEL SBR D IS=3.48u RS=66.4m BV=40.0 IBV=50.0u + CJO=928p M=0.333 N=1.11 TT=8.06n .ENDS *Diodes DMS2120LFWB Spice Model v1.0 Last Revised 2011/11/25 *---------- DMS2220LFDB Spice Model ---------- .SUBCKT DMS2220LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *---------- SBR1U40LP Spice Model ---------- .SUBCKT SBR1U40LP 1 2 DS 1 2 SBR .MODEL SBR D IS=3.48u RS=66.4m BV=40.0 IBV=50.0u + CJO=928p M=0.333 N=1.11 TT=8.06n .ENDS *Diodes DMS2220LFDB Spice Model v1.0 Last Revised 2011/11/25 *---------- DMS3014SFG Spice Model ---------- .SUBCKT DMS3014SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008927 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.236E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.818 + TOX = 6E-008 NSUB = 1E+016 KP = 148.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.833E-007 N = 0.7719 RS = 0.04835 BV = 32 CJO = 5.024E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMS3014SFG Spice Model v1.0M Last Revised 2017/6/28 *---------- DMS3014SFGQ Spice Model ---------- .SUBCKT DMS3014SFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008927 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.236E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.818 + TOX = 6E-008 NSUB = 1E+016 KP = 148.2 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.833E-007 N = 0.7719 RS = 0.04835 BV = 32 CJO = 5.024E-010 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMS3014SFGQ Spice Model v1.0M Last Revised 2017/9/15 *---------- DMS3014SSS Spice Model ---------- .SUBCKT DMS3014SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01 RS 30 3 0.001 RG 20 2 1.3 CGS 2 3 2.268E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.297E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 9.356E+005 ETA = 4.441E-017 VTO = 1.817 + TOX = 6E-008 NSUB = 4.849E+016 KP = 150 KAPPA = 138.4 U0 = 400 .MODEL DCGD D CJO = 4.894E-010 VJ = 0.01098 M = 0.1971 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 2.502E-010 N = 1.063 RS = 0.03357 .MODEL DL D IS = 1.094E-005 N = 1.118 RS = 0.04796 VJ = 0.2303 CJO = 6.6E-010 M = 0.6461 TT = 1.595E-008 .MODEL DR D IS = 1E-015 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMS3014SSS Spice Model v1.0 Last Revised 2010/11/10 *---------- DMS3015SSS Spice Model ---------- .SUBCKT DMS3015SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00327 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.174E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.297E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01379 VTO = 1.824 + TOX = 6E-008 NSUB = 4.849E+016 KP = 64.51 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 7.171E-010 VJ = 0.2386 M = 0.3999 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 1.011E-012 N = 0.9 RS = 0.007376 .MODEL DL D IS = 1.416E-007 N = 0.8743 RS = 0.2205 VJ = 0.5878 CJO = 4.376E-010 M = 0.9 .MODEL DR D IS = 1.3E-006 N = 0.6 .MODEL DB D IS = 2.239E-008 N = 0.6 .ENDS *Diodes DMS3015SSS Spice Model v1.0 Last Revised 2011/3/28 *---------- DMS3016SFG Spice Model ---------- .SUBCKT DMS3016SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMS3016SFG Spice Model v1.0 Last Revised 2010/11/10 *---------- DMS3016SSS Spice Model ---------- .SUBCKT DMS3016SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMS3016SSS Spice Model v1.0 Last Revised 2010/11/10 *---------- DMS3016SSSA Spice Model ---------- .SUBCKT DMS3016SSSA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMS3016SSSA Spice Model v1.0 Last Revised 2010/11/10 *---------- DMS3017SSD Spice Model ---------- *NMOS_Q1 .SUBCKT DMS3017SSD_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00327 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.174E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.297E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01379 VTO = 1.824 + TOX = 6E-008 NSUB = 4.849E+016 KP = 64.51 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 7.171E-010 VJ = 0.2386 M = 0.3999 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 1.011E-012 N = 0.9 RS = 0.007376 .MODEL DL D IS = 1.416E-007 N = 0.8743 RS = 0.2205 VJ = 0.5878 CJO = 4.376E-010 M = 0.9 .MODEL DR D IS = 1.3E-006 N = 0.6 .MODEL DB D IS = 2.239E-008 N = 0.6 .ENDS *NMOS_Q2 .SUBCKT DMS3017SSD_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMS3017SSD Spice Model v1.0 Last Revised 2011/6/27 *---------- DMS3019SSD Spice Model ---------- *NMOS_Q1 .SUBCKT DMS3019SSD_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *NMOS_Q2 .SUBCKT DMS3019SSD_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMS3019SSD Spice Model v1.0 Last Revised 2011/6/20 *---------- DMT10H003SPSW Spice Model ---------- .SUBCKT DMT10H003SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00035 RS 30 3 0.0001 RG 20 2 1.46 CGS 2 3 5.5E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.32E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.612 + TOX = 1E-007 + NSUB = 1E+015 KP = 95 U0 = 420 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.7E-009 VJ = 0.6508 M = 0.9 .MODEL DSUB D IS = 6E-009 N = 1.29 RS = 0.0007 BV = 107.6 + CJO = 3.8E-009 VJ = 0.9 M = 0.394 XTI = 0 TT = 3.587E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H003SPSW Spice Model v1.1 Last Revised 2020/07/22 *---------- DMT10H005SCT Spice Model ---------- .SUBCKT DMT10H005SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002568 RS 30 3 0.001 RG 20 2 0.41 CGS 2 3 8.598E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.346 + TOX = 6E-008 NSUB = 1E+016 KP = 244.5 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.719E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.45E-011 N = 1.089 RS = 0.0009224 BV = 107 CJO = 3.5E-009 VJ = 0.8 M = 0.6 TT=3.5E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H005SCT Spice Model v1.0 Last Revised 2017/5/12 *---------- DMT10H005SCT Spice Model ---------- .SUBCKT DMT10H005SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002568 RS 30 3 0.001 RG 20 2 0.41 CGS 2 3 8.598E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.346 + TOX = 6E-008 NSUB = 1E+016 KP = 244.5 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.719E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.45E-011 N = 1.089 RS = 0.0009224 BV = 107 CJO = 3.5E-009 VJ = 0.8 M = 0.6 TT=3.5E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H005SCT Spice Model v1.0 Last Revised 2017/5/12 *---------- DMT10H009LCG Spice Model ---------- .SUBCKT DMT10H009LCG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00472 RS 30 3 1E-006 RG 20 2 1.98 CGS 2 3 2.94E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.75E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.69 + TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 6.99E-010 VJ = 1 M = 0.514 .MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 110 CJO = 1.914E-009 VJ = 1 M = 0.155 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009LCG Spice Model v1.0 Last Revised 2018/7/13 *---------- DMT10H009LFG Spice Model ---------- .SUBCKT DMT10H009LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0021 RS 30 3 1E-006 RG 20 2 1.28 CGS 2 3 3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.87E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.78 + TOX = 6E-008 NSUB = 1E+016 KP = 175.2 U0 = 400 KAPPA = 4.92E-010 .MODEL DCGD D CJO = 8.04E-010 VJ = 1 M = 0.52 .MODEL DSUB D IS = 2.28E-010 N = 1.185 RS = 0.0026 BV = 107.7 CJO = 2.185E-009 VJ = 1 M = 0.154 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009LFG Spice Model v1.0 Last Revised 2019/6/20 *---------- DMT10H009LH3 Spice Model ---------- .SUBCKT DMT10H009LH3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0038 RS 30 3 1E-006 RG 20 2 1.98 CGS 2 3 2.94E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.75E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.69 + TOX = 6E-008 NSUB = 1E+016 KP = 137.2 U0 = 400 KAPPA = 4.89E-010 .MODEL DCGD D CJO = 6.99E-010 VJ = 1 M = 0.514 .MODEL DSUB D IS = 2.258E-010 N = 1.187 RS = 0.00223 BV = 109 CJO = 1.914E-009 VJ = 1 M = 0.155 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009LH3 Spice Model v1.0 Last Revised 2018/1/11 *---------- DMT10H009LK3 Spice Model ---------- .SUBCKT DMT10H009LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 1E-006 RG 20 2 1.98 CGS 2 3 8.803E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.14E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.31 + TOX = 6E-008 NSUB = 1E+016 KP = 228 U0 = 400 KAPPA = 5.856E-010 .MODEL DCGD D CJO = 9.403E-010 VJ = 1 M = 0.875 .MODEL DSUB D IS = 2.588E-010 N = 1.08 RS = 0.0019 BV = 105 CJO = 1.77E-009 VJ = 1 M = 0.211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009LK3 Spice Model v1.0 Last Revised 2019/1/9 *---------- DMT10H009LPS Spice Model ---------- .SUBCKT DMT10H009LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 1E-006 RG 20 2 1.98 CGS 2 3 8.803E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.14E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.31 + TOX = 6E-008 NSUB = 1E+016 KP = 228 U0 = 400 KAPPA = 5.856E-010 .MODEL DCGD D CJO = 9.403E-010 VJ = 1 M = 0.875 .MODEL DSUB D IS = 2.588E-010 N = 1.08 RS = 0.0019 BV = 105 CJO = 1.77E-009 VJ = 1 M = 0.211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009LPS Spice Model v1.0 Last Revised 2019/1/9 *---------- DMT10H009LSS Spice Model ---------- .SUBCKT DMT10H009LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00541 RS 30 3 1E-006 RG 20 2 2 CGS 2 3 5.32E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.73 + TOX = 6E-008 NSUB = 1E+016 KP = 102.7 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 6.99E-010 VJ = 1 M = 0.515 .MODEL DSUB D IS = 2.253E-010 N = 1.187 RS = 0.002508 BV = 108 CJO = 1.883E-009 VJ = 1 M = 0.154 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009LSS Spice Model v1.0 Last Revised 2018/10/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT10H009LSSQ Spice Model ---------- .SUBCKT DMT10H009LSSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00541 RS 30 3 1E-006 RG 20 2 2 CGS 2 3 5.32E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.73 + TOX = 6E-008 NSUB = 1E+016 KP = 102.7 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 6.99E-010 VJ = 1 M = 0.515 .MODEL DSUB D IS = 2.253E-010 N = 1.187 RS = 0.002508 BV = 108 CJO = 1.883E-009 VJ = 1 M = 0.154 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009LSSQ Spice Model v1.0 Last Revised 2023/10/30 *---------- DMT10H009SCG Spice Model ---------- .SUBCKT DMT10H009SCG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 1E-006 RG 20 2 1.72 CGS 2 3 8.52E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.96 + TOX = 6E-008 NSUB = 1E+016 KP = 153 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 8.32E-010 VJ = 1 M = 0.665 .MODEL DSUB D IS = 2.253E-010 N = 1.102 RS = 0.0019 BV = 109 CJO = 1.306E-009 VJ = 1 M = 0.209 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009SCG Spice Model v1.0 Last Revised 2019/1/4 *---------- DMT10H009SK3 Spice Model ---------- .SUBCKT DMT10H009SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 1E-006 RG 20 2 1.72 CGS 2 3 8.52E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.96 + TOX = 6E-008 NSUB = 1E+016 KP = 153 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 8.32E-010 VJ = 1 M = 0.665 .MODEL DSUB D IS = 2.253E-010 N = 1.102 RS = 0.0019 BV = 109 CJO = 1.306E-009 VJ = 1 M = 0.209 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009SK3 Spice Model v1.0 Last Revised 2019/1/4 *---------- DMT10H009SPS Spice Model ---------- .SUBCKT DMT10H009SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 1E-006 RG 20 2 1.72 CGS 2 3 8.52E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.96 + TOX = 6E-008 NSUB = 1E+016 KP = 153 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 8.32E-010 VJ = 1 M = 0.665 .MODEL DSUB D IS = 2.253E-010 N = 1.102 RS = 0.0019 BV = 109 CJO = 1.306E-009 VJ = 1 M = 0.209 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009SPS Spice Model v1.0 Last Revised 2019/1/4 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT10H009SPSW Spice Model ---------- .SUBCKT DMT10H009SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 1E-006 RG 20 2 1.72 CGS 2 3 8.52E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.96 + TOX = 6E-008 NSUB = 1E+016 KP = 153 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 8.32E-010 VJ = 1 M = 0.665 .MODEL DSUB D IS = 2.253E-010 N = 1.102 RS = 0.0019 BV = 109 CJO = 1.306E-009 VJ = 1 M = 0.209 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009SPSW Spice Model v1.0 Last Revised 2024/11/20 *---------- DMT10H009SSS Spice Model ---------- .SUBCKT DMT10H009SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00484 RS 30 3 1.12E-006 RG 20 2 1.7 CGS 2 3 2.93E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.77E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.33 + TOX = 6.25E-008 NSUB = 1E+016 KP = 101.1 U0 = 400 KAPPA = 4.398E-010 .MODEL DCGD D CJO = 6.94E-010 VJ = 1 M = 0.516 .MODEL DSUB D IS = 2.258E-010 N = 1.19 RS = 0.002508 BV = 110 CJO = 1.9201E-009 VJ = 1 M = 0.156 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H009SSS Spice Model v1.0 Last Revised 2018/10/11 *---------- DMT10H010LCT Spice Model ---------- .SUBCKT DMT10H010LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005481 RS 30 3 1E-006 RG 20 2 0.99 CGS 2 3 3.582E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.77E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 + TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 .MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010LCT Spice Model v1.0 Last Revised 2015/10/13 *---------- DMT10H010LK3 Spice Model ---------- .SUBCKT DMT10H010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003569 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.092E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 53.29 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.273E-010 N = 1.184 RS = 0.0002213 BV = 103 CJO = 2E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010LK3 Spice Model v1.0M Last Revised 2016/9/5 *---------- DMT10H010LPS Spice Model ---------- .SUBCKT DMT10H010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005481 RS 30 3 1E-006 RG 20 2 0.99 CGS 2 3 3.582E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.77E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 + TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 .MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010LPS Spice Model v1.0 Last Revised 2015/7/15 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT10H010LPSW Spice Model ---------- .SUBCKT DMT10H010LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005481 RS 30 3 1E-006 RG 20 2 0.99 CGS 2 3 3.582E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.77E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 + TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 .MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010LPSW Spice Model v1.0 Last Revised 2024/11/20 *---------- DMT10H010LPS Spice Model ---------- .SUBCKT DMT10H010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005481 RS 30 3 1E-006 RG 20 2 0.99 CGS 2 3 3.582E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.77E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 + TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 .MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010LPS Spice Model v1.0 Last Revised 2015/7/15 *---------- DMT10H010LSSQ Spice Model ---------- .SUBCKT DMT10H010LSSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005481 RS 30 3 1E-006 RG 20 2 2 CGS 2 3 4.225E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0 VTO = 2.748 + TOX = 6.05E-008 + NSUB = 1E+015 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 IS = 0 .MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 .MODEL DSUB D IS = 3E-009 N = 1.328 RS = 0.0033 BV = 102.9 + CJO = 1.914E-009 VJ = 1 M = 0.2026 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010LSSQ Spice Model v1.1 Last Revised 2023/01/04 *---------- DMT10H010SPS Spice Model ---------- .SUBCKT DMT10H010SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010SPS Spice Model v1.0 Last Revised 2017/12/6 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT10H010SPSW Spice Model ---------- .SUBCKT DMT10H010SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H010SPSW Spice Model v1.0 Last Revised 2024/11/20 *---------- DMT10H014LSS Spice Model ---------- .SUBCKT DMT10H014LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H014LSS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT10H015LCG Spice Model ---------- .SUBCKT DMT10H015LCG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015LCG Spice Model v1.0M Last Revised 2015/6/13 *---------- DMT10H015LFG Spice Model ---------- .SUBCKT DMT10H015LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015LFG Spice Model v1.0 Last Revised 2015/9/14 *---------- DMT10H015LK3 Spice Model ---------- .SUBCKT DMT10H015LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015LK3 Spice Model v1.0M Last Revised 2016/6/13 *---------- DMT10H015LPS Spice Model ---------- .SUBCKT DMT10H015LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015LPS Spice Model v1.0 Last Revised 2015/9/14 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT10H015LPSW Spice Model ---------- .SUBCKT DMT10H015LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015LPSW Spice Model v1.0 Last Revised 2024/11/20 *---------- DMT10H015LSS Spice Model ---------- .SUBCKT DMT10H015LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015LSS Spice Model v1.0 Last Revised 2015/9/14 *---------- DMT10H015SK3 Spice Model ---------- .SUBCKT DMT10H015SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0127 RS 30 3 1E-008 RG 20 2 0.69 CGS 2 3 1.887E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.78E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.982 + TOX = 6.05E-008 NSUB = 1E+016 KP = 154.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.89E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.22E-010 N = 1.19 RS = 0.001826 BV = 105 CJO = 1.032E-009 VJ = 1 M = 0.241 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015SK3 Spice Model v1.0 Last Revised 2018/12/25 *---------- DMT10H015SPS Spice Model ---------- .SUBCKT DMT10H015SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00671 RS 30 3 0.001 RG 20 2 1.69 CGS 2 3 2.324E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.2 TOX = 6E-008 + NSUB = 1E+016 KP = 52.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.879E-010 VJ = 0.8 M = 0.7727 .MODEL DSUB D IS = 9.79E-009 N = 1.419 RS = 0.00067 BV = 105.6 CJO = 1.62E-009 VJ = 0.8 M = 0.6 TT = 2.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015SPS Spice Model v1.0 Last Revised 2018/03/20 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT10H015SPSW Spice Model ---------- .SUBCKT DMT10H015SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00671 RS 30 3 0.001 RG 20 2 1.69 CGS 2 3 2.324E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.2 TOX = 6E-008 + NSUB = 1E+016 KP = 52.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.879E-010 VJ = 0.8 M = 0.7727 .MODEL DSUB D IS = 9.79E-009 N = 1.419 RS = 0.00067 BV = 105.6 CJO = 1.62E-009 VJ = 0.8 M = 0.6 TT = 2.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H015SPSW Spice Model v1.0 Last Revised 2024/11/20 *---------- DMT10H017LPD Spice Model ---------- .SUBCKT DMT10H017LPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008994 RS 30 3 0.001 RG 20 2 1.17 CGS 2 3 1.965E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.15E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.096 + TOX = 6E-008 NSUB = 1E+016 KP = 55 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.005E-010 VJ = 0.7832 M = 0.8 .MODEL DSUB D IS = 2.301E-010 N = 1.271 RS = 0.002758 BV = 103.4 + CJO = 2.5E-009 VJ = 0.8 M = 0.6 TT = 2.029E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H017LPD Spice Model v1.0J Last Revised 2018/05/25 *---------- DMT10H025LK3 Spice Model ---------- .SUBCKT DMT10H025LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00752 RS 30 3 0.001 RG 20 2 6.22 CGS 2 3 1.533E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 + TOX = 6E-008 NSUB = 1E+016 KP = 14.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.499E-010 VJ = 0.8 M = 0.6956 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 110 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H025LK3 Spice Model v1.0 Last Revised 2018/5/21 *---------- DMT10H025LSS Spice Model ---------- .SUBCKT DMT10H025LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00752 RS 30 3 0.001 RG 20 2 1.3 CGS 2 3 1.41E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 + TOX = 6E-008 NSUB = 1E+016 KP = 14.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.42E-010 VJ = 0.8 M = 0.6956 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 105.2 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H025LSS Spice Model v1.0 Last Revised 2019/4/15 *---------- DMT10H025SK3 Spice Model ---------- .SUBCKT DMT10H025SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00799 RS 30 3 0.001 RG 20 2 6.22 CGS 2 3 1.533E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.941 + TOX = 6E-008 NSUB = 1E+016 KP = 23.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.591E-010 VJ = 0.8 M = 0.7054 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 109 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H025SK3 Spice Model v1.0 Last Revised 2018/2/14 *---------- DMT10H025SSS Spice Model ---------- .SUBCKT DMT10H025SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00752 RS 30 3 0.001 RG 20 2 6.22 CGS 2 3 1.533E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 + TOX = 6E-008 NSUB = 1E+016 KP = 14.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.499E-010 VJ = 0.8 M = 0.6956 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 110 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H025SSS Spice Model v1.0 Last Revised 2017/10/16 *---------- DMT10H032LDV Spice Model ---------- .SUBCKT DMT10H032LDV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0167 RS 30 3 0.0001 RG 20 2 1.1 CGS 2 3 6.682E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.461 + TOX = 1E-007 NSUB = 1E+015 KP = 37 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.349E-010 VJ = 0.8 M = 0.6826 .MODEL DSUB D IS = 1.06E-010 N = 1.213 RS = 0.007934 BV = 106 + CJO = 4.5E-010 VJ = 0.9 M = 0.3001 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/16 *NSUB and U0 had been edited. *---------- DMT10H032LDVW Spice Model ---------- .SUBCKT DMT10H032LDVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01944 RS 30 3 1E-006 RG 20 2 1.15 CGS 2 3 6.775E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.12E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.728 + TOX = 1E-007 NSUB = 1E+014 KP = 34.08 U0 = 999.7 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.234E-010 VJ = 0.9 M = 0.9 .MODEL DSUB D IS = 1.189E-008 N = 1.564 RS = 0.007358 BV = 104.3 + CJO = 3.799E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/27 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT10H032LDVWQ Spice Model ---------- .SUBCKT DMT10H032LDVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01944 RS 30 3 1E-006 RG 20 2 1.15 CGS 2 3 6.775E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.12E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.728 + TOX = 1E-007 NSUB = 1E+014 KP = 34.08 U0 = 999.7 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.234E-010 VJ = 0.9 M = 0.9 .MODEL DSUB D IS = 1.189E-008 N = 1.564 RS = 0.007358 BV = 104.3 + CJO = 3.799E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/27 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT10H032LFDF Spice Model ---------- .SUBCKT DMT10H032LFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0185 RS 30 3 0.0001 RG 20 2 1.18 CGS 2 3 6.037E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.1 + TOX = 1E-007 NSUB = 1E+015 KP = 33 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.88E-010 VJ = 0.8 M = 0.6359 .MODEL DSUB D IS = 9.702E-009 N = 1.497 RS = 0.008392 BV = 107.2 + CJO = 4.7E-010 VJ = 0.9 M = 0.3 TT = 3.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/11 *NSUB and U0 had been edited. *---------- DMT10H032LFVW Spice Model ---------- .SUBCKT DMT10H032LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0167 RS 30 3 0.0001 RG 20 2 1.1 CGS 2 3 6.682E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.461 + TOX = 1E-007 NSUB = 1E+015 KP = 37 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.349E-010 VJ = 0.8 M = 0.6826 .MODEL DSUB D IS = 1.06E-010 N = 1.213 RS = 0.007934 BV = 106 + CJO = 4.5E-010 VJ = 0.9 M = 0.3001 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/16 *NSUB and U0 had been edited. *---------- DMT10H032LK3 Spice Model ---------- .SUBCKT DMT10H032LK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.018 RS 30 3 0.0001 RG 20 2 1.15 CGS 2 3 6.78E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.22E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.714 + TOX = 1E-007 + NSUB = 1E+015 KP = 31 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.9 .MODEL DSUB D IS = 1.4E-009 N = 1.398 RS = 0.004741 BV = 105.9 + CJO = 4.5E-010 VJ = 0.9 M = 0.41 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H032LK3 Spice Model v1.1 Last Revised 2021/09/10 *---------- DMT10H032LSS Spice Model ---------- .SUBCKT DMT10H032LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.018 RS 30 3 0.0001 RG 20 2 1.15 CGS 2 3 6.78E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.22E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.68 + TOX = 1E-007 + NSUB = 1E+015 KP = 35 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.9 .MODEL DSUB D IS = 1.5E-009 N = 1.412 RS = 0.006474 BV = 104.8 + CJO = 4.5E-010 VJ = 0.9 M = 0.41 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H032LSS Spice Model v1.1 Last Revised 2021/09/10 *---------- DMT10H032SDVW Spice Model ---------- .SUBCKT DMT10H032SDVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02063 RS 30 3 1E-006 RG 20 2 1.19 CGS 2 3 5.315E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.55E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.927 + TOX = 1E-007 NSUB = 1E+014 KP = 24.5 U0 = 740.1 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.671E-010 VJ = 0.8 M = 0.5407 .MODEL DSUB D IS = 1.771E-009 N = 1.435 RS = 0.007555 BV = 106.1 + CJO = 3.948E-010 VJ = 3 M = 0.2097 XTI = 0 TT = 1.661E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/27 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT10H032SDVWQ Spice Model ---------- .SUBCKT DMT10H032SDVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02063 RS 30 3 1E-006 RG 20 2 1.19 CGS 2 3 5.315E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.55E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.927 + TOX = 1E-007 NSUB = 1E+014 KP = 24.5 U0 = 740.1 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.671E-010 VJ = 0.8 M = 0.5407 .MODEL DSUB D IS = 1.771E-009 N = 1.435 RS = 0.007555 BV = 106.1 + CJO = 3.948E-010 VJ = 3 M = 0.2097 XTI = 0 TT = 1.661E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/27 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT10H032SFVW Spice Model ---------- .SUBCKT DMT10H032SFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0175 RS 30 3 0.0001 RG 20 2 1.19 CGS 2 3 5.3E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.9 + TOX = 1E-007 + NSUB = 1E+015 KP = 27 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.15E-010 VJ = 0.8 M = 0.6389 .MODEL DSUB D IS = 4E-009 N = 1.515 RS = 0.003383 BV = 107.6 + CJO = 5.5E-010 VJ = 0.8965 M = 0.3 XTI = 0 TT = 1.662E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H032SFVW Spice Model v1.1 Last Revised 2020/07/02 *---------- DMT10H052LFDF Spice Model ---------- .SUBCKT DMT10H052LFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0335 RS 30 3 0.0001 RG 20 2 6.31 CGS 2 3 2.54E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.26E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.839 + TOX = 1E-007 + NSUB = 1E+015 KP = 24.67 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1E-010 VJ = 0.8 M = 0.756 .MODEL DSUB D IS = 1.1E-009 N = 1.398 RS = 0.004741 BV = 114.8 + CJO = 7.054E-010 VJ = 0.9 M = 0.5033 XTI = 0 TT = 1.13E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H052LFDF Spice Model v1.1 Last Revised 2020/06/05 *---------- DMT10H072LDV Spice Model ---------- .SUBCKT DMT10H072LDV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04 RS 30 3 0.0001 RG 20 2 8.18 CGS 2 3 2.45E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.8 + TOX = 1E-007 + NSUB = 1E+015 KP = 14.3 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7E-011 VJ = 0.8 M = 0.3575 .MODEL DSUB D IS = 4E-009 N = 1.513 RS = 0.0068 BV = 113.3 + CJO = 4.834E-010 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H072LDV Spice Model v1.1 Last Revised 2020/12/02 *---------- DMT10H072LFDF Spice Model ---------- .SUBCKT DMT10H072LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0356 RS 30 3 0.001 RG 20 2 7 CGS 2 3 2.63E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.672 + TOX = 6E-008 NSUB = 1E+016 KP = 18.46 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.225E-010 VJ = 0.8 M = 0.7931 .MODEL DSUB D IS = 2.237E-010 N = 1.302 RS = 0.007051 BV = 116 CJO = 4.591E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H072LFDF Spice Model v1.0 Last Revised 2018/1/10 *---------- DMT10H072LFDFQ Spice Model ---------- .SUBCKT DMT10H072LFDFQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0356 RS 30 3 0.001 RG 20 2 7 CGS 2 3 2.63E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.552 + TOX = 6E-008 NSUB = 1E+016 KP = 18.8 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.225E-010 VJ = 0.8 M = 0.7931 .MODEL DSUB D IS = 2.237E-010 N = 1.302 RS = 0.007051 BV = 125 CJO = 4.591E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H072LFDFQ Spice Model v1.0 Last Revised 2019/7/11 *---------- DMT10H072LFV Spice Model ---------- .SUBCKT DMT10H072LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0381 RS 30 3 0.001 RG 20 2 8.18 CGS 2 3 0.264E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.35E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.38 + TOX = 6E-008 NSUB = 1E+016 KP = 20.17 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.836E-010 VJ = 0.8 M = 0.772 .MODEL DSUB D IS = 2.045E-010 N = 1.179 RS = 0.00273 BV = 125 CJO = 3.018E-010 VJ = 0.75 M = 0.69 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H072LFV Spice Model v1.0 Last Revised 2019/1/14 *---------- DMT10H075LE Spice Model ---------- .SUBCKT DMT10H075LE 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.035 RS 30 3 0.0001 RG 20 2 8.18 CGS 2 3 2.45E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.295 + TOX = 1E-007 + NSUB = 1E+015 KP = 13.1 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7E-011 VJ = 0.8 M = 0.3575 .MODEL DSUB D IS = 2.7E-009 N = 1.459 RS = 0.006901 BV = 118.1 + CJO = 4.834E-010 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H075LE Spice Model v1.1 Last Revised 2021/03/11 *---------- DMT10H4M5LPS Spice Model ---------- .SUBCKT DMT10H4M5LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00058 RS 30 3 0.003 RG 20 2 2.08 CGS 2 3 6.33E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.757 + TOX = 6E-008 NSUB = 1E+016 KP = 112.3 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.46E-010 VJ = 0.75 M = 0.48 .MODEL DSUB D IS = 2.74E-010 N = 1.122 RS = 0.003 BV = 107 CJO = 3.9E-009 VJ = 0.77 M = 0.62 TT = 1.32E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H4M5LPS Spice Model v1.0M Last Revised 2019/5/28 *---------- DMT10H4M5LPS Spice Model ---------- .SUBCKT DMT10H4M5LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00058 RS 30 3 0.003 RG 20 2 2.08 CGS 2 3 6.33E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.757 + TOX = 6E-008 NSUB = 1E+016 KP = 112.3 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.46E-010 VJ = 0.75 M = 0.48 .MODEL DSUB D IS = 2.74E-010 N = 1.122 RS = 0.003 BV = 107 CJO = 3.9E-009 VJ = 0.77 M = 0.62 TT = 1.32E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H4M5LPS Spice Model v1.0M Last Revised 2019/5/28 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT10H4M5LPSW Spice Model ---------- .SUBCKT DMT10H4M5LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00058 RS 30 3 0.003 RG 20 2 2.08 CGS 2 3 6.33E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.757 + TOX = 6E-008 NSUB = 1E+016 KP = 112.3 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.46E-010 VJ = 0.75 M = 0.48 .MODEL DSUB D IS = 2.74E-010 N = 1.122 RS = 0.003 BV = 107 CJO = 3.9E-009 VJ = 0.77 M = 0.62 TT = 1.32E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H4M5LPSW Spice Model v1.0M Last Revised 2024/11/20 *---------- DMT10H9M9LCT Spice Model ---------- .SUBCKT DMT10H9M9LCT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005401 RS 30 3 0.0001 RG 20 2 1.98 CGS 2 3 2.3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.43E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.6 + TOX = 1E-007 + NSUB = 1E+015 KP = 121.3 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.803E-010 VJ = 0.6233 M = 0.9 .MODEL DSUB D IS = 9E-009 N = 1.44 RS = 0.002008 BV = 105.9 + CJO = 2.25E-009 VJ = 0.9 M = 0.4899 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H9M9LCT Spice Model v1.1 Last Revised 2020/11/25 **---------- DMT10H9M9SCT Spice Model ---------- .SUBCKT DMT10H9M9SCT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0039 RS 30 3 0.0001 RG 20 2 1.72 CGS 2 3 2.08E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.598 + TOX = 1E-007 + NSUB = 1E+015 KP = 50 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 7.8E-009 N = 1.476 RS = 0.0008929 BV = 105.5 + CJO = 1.5E-009 VJ = 0.9 M = 0.4 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H9M9SCT Spice Model v1.1 Last Revised 2020/11/18 *---------- DMT10H9M9SH3 Spice Model ---------- .SUBCKT DMT10H9M9SH3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005374 RS 30 3 0.0001 RG 20 2 1.72 CGS 2 3 2.08E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4 + TOX = 1E-007 + NSUB = 1E+015 KP = 79.51 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 5.2E-009 N = 1.444 RS = 0.00136 BV = 106.1 + CJO = 1.5E-009 VJ = 0.9 M = 0.4 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT10H9M9SH3 Spice Model v1.1 Last Revised 2020/11/18 *---------- DMT12H007LPS Spice Model ---------- .SUBCKT DMT12H007LPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 1E-006 RG 20 2 1.96 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.34E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.5 + TOX = 1E-007 NSUB = 1E+015 KP = 53 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.02E-010 VJ = 0.8 M = 0.7775 .MODEL DSUB D IS = 3.165E-011 N = 1.126 RS = 0.0005244 BV = 125.7 + CJO = 1.65E-009 VJ = 0.9 M = 0.38 TT = 2.702E-008 .MODEL DLIM D + IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/10/01 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT12H007LPSW Spice Model ---------- .SUBCKT DMT12H007LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 1E-006 RG 20 2 1.96 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.34E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.5 + TOX = 1E-007 NSUB = 1E+015 KP = 53 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.02E-010 VJ = 0.8 M = 0.7775 .MODEL DSUB D IS = 3.165E-011 N = 1.126 RS = 0.0005244 BV = 125.7 + CJO = 1.65E-009 VJ = 0.9 M = 0.38 TT = 2.702E-008 .MODEL DLIM D + IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2024/11/20 *---------- DMT12H007SPS Spice Model ---------- .SUBCKT DMT12H007SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0035 RS 30 3 0.0001 RG 20 2 1.87 CGS 2 3 3.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.6 + TOX = 1E-007 NSUB = 1E+015 KP = 50 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.3E-010 VJ = 0.799 M = 0.899 .MODEL DSUB D IS = 1E-008 N = 1.451 RS = 4.441E-010 BV = 129.1 + CJO = 1.3E-009 VJ = 0.899 M = 0.301 XTI = 0 TT = 2.77E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/05/21 *---------- DMT12H060LCA9 Spice Model ---------- .SUBCKT DMT12H060LCA9 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.06 RS 30 3 0.0001 RG 20 2 4.4 CGS 2 3 5.49E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.98E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.95 + TOX = 1E-007 + NSUB = 1E+015 KP = 75 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.3E-010 VJ = 0.5988 M = 0.68 .MODEL DSUB D IS = 7E-008 N = 1.805 RS = 0.01483 BV = 117.4 + CJO = 3.637E-010 VJ = 0.9 M = 0.3969 XTI = 0 TT = 1.476E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT12H060LCA9-7-55 Spice Model v1.1 Last Revised 2021/12/10 *---------- DMT12H060LFDF Spice Model ---------- .SUBCKT DMT12H060LFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04 RS 30 3 0.0001 RG 20 2 4.48 CGS 2 3 4.93E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.63E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 0.7764 + TOX = 1E-007 + NSUB = 1E+015 KP = 73 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.6E-010 VJ = 0.8 M = 0.765 .MODEL DSUB D IS = 5.5E-009 N = 1.28 RS = 0.016 BV = 119.7 + CJO = 3.55E-010 VJ = 0.9 M = 0.4 XTI = 0 TT = 1.205E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT12H060LFDF Spice Model v1.1 Last Revised 2020/07/31 *---------- DMT12H065LFDF Spice Model ---------- .SUBCKT DMT12H065LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0208 RS 30 3 0.001 RG 20 2 6.86 CGS 2 3 0.2555E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.44 + TOX = 6E-008 NSUB = 1E+016 KP = 9.8 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 0.515E-010 VJ = 0.8 M = 0.6947 .MODEL DSUB D IS = 1.74E-010 N = 1.22 RS = 0.0018 BV = 117 CJO = 1.38E-010 VJ = 0.82 M = 0.59 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT12H065LFDF Spice Model v1.0 Last Revised 2019/4/19 *---------- DMT12H090LFDF4 Spice Model ---------- .SUBCKT DMT12H090LFDF4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.037 RS 30 3 0.001 RG 20 2 6.56 CGS 2 3 0.169E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.72E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 7.7 U0 = 400 KAPPA = 8.1 .MODEL DCGD D CJO = 0.34E-010 VJ = 0.8 M = 0.695 .MODEL DSUB D IS = 1.693E-010 N = 1.22 RS = 0.0023 BV = 120 CJO = 0.91E-010 VJ = 0.8 M = 0.62 TT = 1.65E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT12H090LFDF4 Spice Model v1.0 Last Revised 2019/7/122 *---------- DMT15H017LPS Spice Model ---------- .SUBCKT DMT15H017LPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0075 RS 30 3 1E-006 RG 20 2 1.91 CGS 2 3 3.3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.6 + TOX = 1E-007 NSUB = 1E+015 KP = 51 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.5E-010 VJ = 0.8 M = 0.8889 .MODEL DSUB D IS = 6.927E-011 N = 1.161 RS = 0.0009181 BV = 161 + CJO = 1.65E-009 VJ = 0.9 M = 0.5 TT = 3.597E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/10/01 *---------- DMT15H017LPSW Spice Model ---------- .SUBCKT DMT15H017LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0075 RS 30 3 1E-006 RG 20 2 1.91 CGS 2 3 3.3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.6 + TOX = 1E-007 NSUB = 1E+015 KP = 51 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.5E-010 VJ = 0.8 M = 0.8889 .MODEL DSUB D IS = 6.927E-011 N = 1.161 RS = 0.0009181 BV = 161 + CJO = 1.65E-009 VJ = 0.9 M = 0.5 TT = 3.597E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/10/01 *---------- DMT15H017SK3 Spice Model ---------- .SUBCKT DMT15H017SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0064 RS 30 3 0.0001 RG 20 2 1.83 CGS 2 3 2.339E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.21 + TOX = 1E-007 NSUB = 1E+015 KP = 26.94 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.8E-010 VJ = 0.7446 M = 0.9 .MODEL DSUB D IS = 8E-009 N = 1.396 RS = 0.003075 BV = 159.2 + CJO = 1.62E-009 VJ = 0.9 M = 0.4433 XTI = 0 TT = 9.814E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/04/23 *---------- DMT15H035SCT Spice Model ---------- .SUBCKT DMT15H035SCT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.0001 RG 20 2 0.3 CGS 2 3 1.59E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.1 + TOX = 1E-007 + NSUB = 1E+015 KP = 13 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.7E-010 VJ = 0.65 M = 0.9 .MODEL DSUB D IS = 3E-009 N = 1.383 RS = 0.00388 BV = 164.3 + CJO = 1.148E-009 VJ = 0.9 M = 0.4439 XTI = 0 TT = 2.671E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT15H035SCT Spice Model v1.1 Last Revised 2021/12/10 *---------- DMT15H053SK3 Spice Model ---------- .SUBCKT DMT15H053SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0198 RS 30 3 1E-008 RG 20 2 0.64 CGS 2 3 0.8766E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.44E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.964 + TOX = 6E-008 NSUB = 1E+016 KP = 96.9 U0 = 400 KAPPA = 4.423E-010 .MODEL DCGD D CJO = 3.115E-010 VJ = 0.67 M = 0.8022 .MODEL DSUB D IS = 2.717E-010 N = 1.175 RS = 0.00164 BV = 158 CJO = 0.568E-009 VJ = 1 M = 0.24 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT15H053SK3 Spice Model v1.1 Last Revised 2021/12/23 *---------- DMT15H053SPSW Spice Model ---------- .SUBCKT DMT15H053SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0342 RS 30 3 0.0001 RG 20 2 0.64 CGS 2 3 8.111E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.808 + TOX = 1E-007 NSUB = 1E+014 KP = 16.85 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.74E-010 VJ = 0.8 M = 0.7939 .MODEL DSUB D IS = 5.3E-009 N = 1.525 RS = 0.002469 BV = 161.5 + CJO = 5.902E-010 VJ = 0.9 M = 0.4368 XTI = 0 TT = 2.347E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/15 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT15H053SPSWQ Spice Model ---------- .SUBCKT DMT15H053SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0342 RS 30 3 0.0001 RG 20 2 0.64 CGS 2 3 8.111E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.808 + TOX = 1E-007 NSUB = 1E+014 KP = 16.85 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.74E-010 VJ = 0.8 M = 0.7939 .MODEL DSUB D IS = 5.3E-009 N = 1.525 RS = 0.002469 BV = 161.5 + CJO = 5.902E-010 VJ = 0.9 M = 0.4368 XTI = 0 TT = 2.347E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/15 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT15H053SSS Spice Model ---------- .SUBCKT DMT15H053SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0198 RS 30 3 1E-008 RG 20 2 0.64 CGS 2 3 0.8766E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.44E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.964 + TOX = 6E-008 NSUB = 1E+016 KP = 96.9 U0 = 400 KAPPA = 4.423E-010 .MODEL DCGD D CJO = 3.115E-010 VJ = 0.67 M = 0.8022 .MODEL DSUB D IS = 2.717E-010 N = 1.175 RS = 0.00164 BV = 158 CJO = 0.568E-009 VJ = 1 M = 0.24 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT15H053SSS Spice Model v1.0M Last Revised 2019/6/27 *---------- DMT15H067SSS Spice Model ---------- .SUBCKT DMT15H067SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0395 RS 30 3 1E-008 RG 20 2 1.45 CGS 2 3 0.457E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.14E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.15 + TOX = 6E-008 NSUB = 1E+016 KP = 115 U0 = 400 KAPPA = 4.291E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.657 M = 0.799 .MODEL DSUB D IS = 2.863E-010 N = 1.17 RS = 0.001826 BV = 158 CJO = 0.383E-009 VJ = 1 M = 0.247 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT15H067SSS Spice Model v1.0M Last Revised 2019/7/4 *---------- DMT2004UFDF Spice Model ---------- .SUBCKT DMT2004UFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002012 RS 30 3 0.001 RG 20 2 1.55 CGS 2 3 1.143E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 + TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 .MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT2004UFDF Spice Model v1.0M Last Revised 2016/6/30 *---------- DMT2004UFG Spice Model ---------- .SUBCKT DMT2004UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002012 RS 30 3 0.001 RG 20 2 1.55 CGS 2 3 1.143E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 + TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 .MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT2004UFG Spice Model v1.0M Last Revised 2016/6/30 *---------- DMT2004UFV Spice Model ---------- .SUBCKT DMT2004UFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002012 RS 30 3 0.001 RG 20 2 1.55 CGS 2 3 1.143E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 + TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 .MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT2004UFV Spice Model v1.0M Last Revised 2016/6/30 *---------- DMT2004UPS Spice Model ---------- .SUBCKT DMT2004UPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002012 RS 30 3 0.001 RG 20 2 1.55 CGS 2 3 1.143E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 + TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 .MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT2004UPS Spice Model v1.0M Last Revised 2016/6/30 *---------- DMT2005UDV Spice Model ---------- .SUBCKT DMT2005UDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001515 RS 30 3 0.001 RG 20 2 1.63 CGS 2 3 1.942E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.158 + TOX = 6E-008 NSUB = 1E+016 KP = 233.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.359E-009 N = 1.165 RS = 0.004451 BV = 28 CJO = 3.028E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT2005UDV Spice Model v1.0M Last Revised 2017/12/1 *---------- DMT26M0LDG Spice Model ---------- *Q1 .SUBCKT DMT26M0LDG_Q1 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00267 RS 30 3 0.0001 RG 20 2 0.65 CGS 2 3 9.647E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.092E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.82 + TOX = 1E-007 NSUB = 1E+016 KP = 109.4 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.421E-010 VJ = 1.371 M = 0.7002 .MODEL DSUB D IS = 2.22E-009 N = 1.331 RS = 0.001881 BV = 35.74 + CJO = 1.181E-009 VJ = 0.9 M = 0.1983 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Q2 .SUBCKT DMT26M0LDG_Q2 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001358 RS 30 3 0.0001 RG 20 2 0.49 CGS 2 3 3.762E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.59E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.936 + TOX = 1E-007 NSUB = 8.497E+015 KP = 140.2 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.705E-010 VJ = 1.861 M = 0.8977 .MODEL DSUB D IS = 7.642E-009 N = 1.362 RS = 0.0002034 BV = 35.91 + CJO = 4.035E-009 VJ = 0.9 M = 0.1758 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/03/25 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT3002LPS Spice Model ---------- .SUBCKT DMT3002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-005 RS 30 3 1E-005 RG 20 2 0.75 CGS 2 3 4.936E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.14E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.95 + TOX = 6E-008 NSUB = 1E+016 KP = 110 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.387E-009 N = 1.268 RS = 0.001004 BV = 32.09 + CJO = 6.5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3002LPS Spice Model v1.0 Last Revised 2018/10/09 *---------- DMT3002LPS Spice Model ---------- .SUBCKT DMT3002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 4.937E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.99 + TOX = 6E-008 NSUB = 1E+016 KP = 268.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.244E-010 N = 1.155 RS = 0.0008535 BV = 30 CJO = 5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3002LPS Spice Model v1.0M Last Revised 2016/2/4 *---------- DMTH3003LFG Spice Model ---------- .SUBCKT DMTH3003LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3003LFG Spice Model v1.0M Last Revised 2016/6/29 *---------- DMTH3003LFGQ Spice Model ---------- .SUBCKT DMTH3003LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3003LFGQ Spice Model v1.0M Last Revised 2016/6/29 *---------- DMT3004LFG Spice Model ---------- .SUBCKT DMT3004LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3004LFG Spice Model v1.0M Last Revised 2016/6/29 *---------- DMTH3004LPS Spice Model ---------- .SUBCKT DMTH3004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LPS Spice Model v1.0 Last Revised 2015/11/10 *---------- DMT3006LDK Spice Model ---------- .SUBCKT DMT3006LDK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LDK Spice Model v1.0M Last Revised 2016/3/2 *---------- DMT3006LFDF Spice Model ---------- .SUBCKT DMT3006LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LFDF Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3006LFDFQ Spice Model ---------- .SUBCKT DMT3006LFDFQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LFDFQ Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3006LFG Spice Model ---------- .SUBCKT DMT3006LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LFG Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3006LFV Spice Model ---------- .SUBCKT DMT3006LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LFV Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3006LFVQ Spice Model ---------- .SUBCKT DMT3006LFVQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LFVQ Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3006LPB Spice Model ---------- *Q1 .SUBCKT DMT3006LPB_1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003367 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 7.928E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.2 + TOX = 6E-008 NSUB = 1E+016 KP = 62.28 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.333E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.37E-010 N = 1.231 RS = 0.002611 BV = 34.67 + CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 7.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Q2 .SUBCKT DMT3006LPB_2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002456 RS 30 3 0.001 RG 20 2 2.07 CGS 2 3 1.092E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.05 + TOX = 6E-008 NSUB = 1E+016 KP = 108.8 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.2E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 7.686E-010 N = 1.293 RS = 0.0009542 BV = 33.4 + CJO = 9.309E-010 VJ = 0.8 M = 0.6 TT = 9.65E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LPB Spice Model v1.0J Last Revised 2018/07/28 *---------- DMT3006LPS Spice Model ---------- .SUBCKT DMT3006LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3006LPS Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3008LFDF Spice Model ---------- .SUBCKT DMT3008LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001978 RS 30 3 0.001 RG 20 2 1.62 CGS 2 3 9.083E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.922 + TOX = 6E-008 NSUB = 1E+016 KP = 41.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.931E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.761E-010 N = 1.236 RS = 0.002671 BV = 35 CJO = 8.829E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3008LFDF Spice Model v1.0M Last Revised 2016/6/14 *---------- DMT3009LDT Spice Model ---------- .SUBCKT DMT3009LDT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002503 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 7.039E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.879 + TOX = 6E-008 NSUB = 1E+016 KP = 40.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.446E-010 VJ = 0.8 M = 0.7188 .MODEL DSUB D IS = 2.773E-010 N = 1.21 RS = 0.005245 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3009LDT Spice Model v1.0 Last Revised 2015/9/7 *---------- DMT3009LDV Spice Model ---------- .SUBCKT DMT3009LDV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005851 RS 30 3 0.0001 RG 20 2 0.61 CGS 2 3 7.788E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.834E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.066 + TOX = 1E-007 NSUB = 1E+014 KP = 51.09 U0 = 636.6 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.491E-010 VJ = 1.5 M = 0.6721 .MODEL DSUB D IS = 8.929E-010 N = 1.291 RS = 0.006469 BV = 32.11 + CJO = 5.539E-010 VJ = 2 M = 0.321 XTI = 0 TT = 9.913E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/05/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT3009LFVW Spice Model ---------- .SUBCKT DMT3009LFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002503 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 7.039E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.879 + TOX = 6E-008 NSUB = 1E+016 KP = 40.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.446E-010 VJ = 0.8 M = 0.7188 .MODEL DSUB D IS = 2.773E-010 N = 1.21 RS = 0.005245 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3009LFVW Spice Model v1.0 Last Revised 2017/7/27 *---------- DMT3009LFVWQ Spice Model ---------- .SUBCKT DMT3009LFVWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002503 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 7.039E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.879 + TOX = 6E-008 NSUB = 1E+016 KP = 40.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.446E-010 VJ = 0.8 M = 0.7188 .MODEL DSUB D IS = 2.773E-010 N = 1.21 RS = 0.005245 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3009LFVWQ Spice Model v1.0 Last Revised 2017/7/27 *---------- DMT3009LSS Spice Model ---------- .SUBCKT DMT3009LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.004487 RS 30 3 0.0001 RG 20 2 1.14 CGS 2 3 4.956E-10 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 + VTO = 2.522 TOX = 1E-07 NSUB = 5.082E+14 KP = 69.03 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.759E-10 VJ = 1.5 M = 0.6478 .MODEL DSUB D IS = 3.04E-10 N = 1.283 RS = 0.001809 BV = 33.47 + CJO = 5.562E-10 VJ = 1.5 M = 0.2855 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/10/28 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT3009UDT Spice Model ---------- .SUBCKT DMT3009UDT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00693 RS 30 3 0.0001 RG 20 2 1.1 CGS 2 3 8.25E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.84 + TOX = 1E-007 NSUB = 1E+016 KP = 94 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.8 M = 0.6349 .MODEL DSUB D IS = 3E-009 N = 1.502 RS = 0.00121 BV = 34.1 + CJO = 5.8E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 8.54E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/09/17 *---------- DMT3009UFVW Spice Model ---------- .SUBCKT DMT3009UFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007478 RS 30 3 0.001 RG 20 2 1.19 CGS 2 3 8.242E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.7 TOX = 6E-008 + NSUB = 1E+016 KP = 73.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.262E-010 VJ = 0.7989 M = 0.8 .MODEL DSUB D IS = 2.274E-010 N = 1.192 RS = 0.01064 BV = 32.86 CJO = 8.004E-010 VJ = 0.8 M = 0.6 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3009UFVW Spice Model v1.0 Last Revised 2019/03/20 *Q1 *---------- DMN3025LDT Spice Model ---------- .SUBCKT DMN3025LDT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004998 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.764E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.946 + TOX = 6E-008 NSUB = 1E+016 KP = 16.89 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.977E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.313E-010 N = 1.242 RS = 0.008911 BV = 30 CJO = 2.221E-010 VJ = 0.6002 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Q2 *---------- DMT3009LDT Spice Model ---------- .SUBCKT DMT3009LDT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002503 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 7.039E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.879 + TOX = 6E-008 NSUB = 1E+016 KP = 40.58 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.446E-010 VJ = 0.8 M = 0.7188 .MODEL DSUB D IS = 2.773E-010 N = 1.21 RS = 0.005245 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3025LDT Spice Model v1.0 Last Revised 2015/9/9 *---------- DMT3020LDT Spice Model ---------- .SUBCKT DMT3020LDT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LDT Spice Model v1.0M Last Revised 2016/5/6 *---------- DMT3020LDV Spice Model ---------- .SUBCKT DMT3020LDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LDV Spice Model v1.0 Last Revised 2015/11/11 *---------- DMT3020LFCL Spice Model ---------- .SUBCKT DMT3020LFCL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 37.6 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFCL Spice Model v1.0M Last Revised 2016/7/14 *---------- DMT3020LFDB Spice Model ---------- .SUBCKT DMT3020LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFDB Spice Model v1.0 Last Revised 2015/11/11 *---------- DMT3020LFDBQ Spice Model ---------- .SUBCKT DMT3020LFDBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFDBQ Spice Model v1.0 Last Revised 2015/11/11 *---------- DMT3020LFDF Spice Model ---------- .SUBCKT DMT3020LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFDF Spice Model v1.0M Last Revised 2016/5/6 *---------- DMT3020LFDFQ Spice Model ---------- .SUBCKT DMT3020LFDFQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006049 RS 30 3 0.001 RG 20 2 1.08 CGS 2 3 3.632E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 .MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFDFQ Spice Model v1.0M Last Revised 2016/5/6 *---------- DMT3020LFDFW Spice Model ---------- .SUBCKT DMT3020LFDFW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01023 RS 30 3 0.0001 RG 20 2 1.45 CGS 2 3 4.16E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.137E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.819 + TOX = 1E-007 NSUB = 9.126E+014 KP = 40.57 U0 = 1176 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.414E-010 VJ = 3 M = 0.8806 .MODEL DSUB D IS = 4.76E-009 N = 1.474 RS = 0.004946 BV = 36.97 + CJO = 2.815E-010 VJ = 2 M = 0.3402 XTI = 0 TT = 5.03E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT3020LFDFWQ Spice Model ---------- .SUBCKT DMT3020LFDFWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01023 RS 30 3 0.0001 RG 20 2 1.45 CGS 2 3 4.16E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.137E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.819 + TOX = 1E-007 NSUB = 9.126E+014 KP = 40.57 U0 = 1176 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.414E-010 VJ = 3 M = 0.8806 .MODEL DSUB D IS = 4.76E-009 N = 1.474 RS = 0.004946 BV = 36.97 + CJO = 2.815E-010 VJ = 2 M = 0.3402 XTI = 0 TT = 5.03E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT3020LFVW Spice Model ---------- .SUBCKT DMT3020LFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009694 RS 30 3 0.001 RG 20 2 1.57 CGS 2 3 5.055E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.14 TOX = 6E-008 NSUB = 1E+016 KP = 36.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.177E-010 VJ = 0.8 M = 0.7223 .MODEL DSUB D IS = 5.966E-009 N = 1.31 RS = 0.02099 BV = 35 CJO = 3.342E-010 VJ = 0.9 M = 0.2629 TT=5.35E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFVW Spice Model v1.0M Last Revised 2016/8/23 *---------- DMT3020LFVW Spice Model ---------- .SUBCKT DMT3020LFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009694 RS 30 3 0.001 RG 20 2 1.57 CGS 2 3 5.055E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.14 TOX = 6E-008 NSUB = 1E+016 KP = 36.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.177E-010 VJ = 0.8 M = 0.7223 .MODEL DSUB D IS = 5.966E-009 N = 1.31 RS = 0.02099 BV = 35 CJO = 3.342E-010 VJ = 0.9 M = 0.2629 TT=5.35E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LFVW Spice Model v1.0M Last Revised 2016/8/23 *---------- DMT3020LSD Spice Model ---------- .SUBCKT DMT3020LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009694 RS 30 3 0.001 RG 20 2 1.57 CGS 2 3 5.055E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.14 TOX = 6E-008 NSUB = 1E+016 KP = 36.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.177E-010 VJ = 0.8 M = 0.7223 .MODEL DSUB D IS = 5.966E-009 N = 1.31 RS = 0.02099 BV = 35 CJO = 3.342E-010 VJ = 0.9 M = 0.2629 TT=5.35E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LSD Spice Model v1.0M Last Revised 2016/8/23 *---------- DMT3020LSDQ Spice Model ---------- .SUBCKT DMT3020LSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009694 RS 30 3 0.001 RG 20 2 1.57 CGS 2 3 5.055E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.14 TOX = 6E-008 NSUB = 1E+016 KP = 36.84 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.177E-010 VJ = 0.8 M = 0.7223 .MODEL DSUB D IS = 5.966E-009 N = 1.31 RS = 0.02099 BV = 35 CJO = 3.342E-010 VJ = 0.9 M = 0.2629 TT=5.35E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3020LSDQ Spice Model v1.0M Last Revised 2019/9/02 *---------- DMT3020UFDB Spice Model ---------- .SUBCKT DMT3020UFDB 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01188 RS 30 3 0.0001 RG 20 2 1.5 CGS 2 3 3.42E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.65 + TOX = 1E-007 NSUB = 1E+015 KP = 28.5 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.8E-010 VJ = 0.75 M = 0.485 .MODEL DSUB D IS = 8E-009 N = 1.48 RS = 0.00921 BV = 33.06 + CJO = 3.35E-010 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/03/22 *---------- DMT3022UEV Spice Model ---------- .SUBCKT DMT3022UEV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007478 RS 30 3 0.001 RG 20 2 1.19 CGS 2 3 8.242E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.7 TOX = 6E-008 + NSUB = 1E+016 KP = 73.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.262E-010 VJ = 0.7989 M = 0.8 .MODEL DSUB D IS = 2.274E-010 N = 1.192 RS = 0.01064 BV = 32.86 CJO = 8.004E-010 VJ = 0.8 M = 0.6 TT = 8.5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT3022UEV Spice Model v1.0 Last Revised 2018/03/20 *---------- DMT30M9LPS Spice Model ---------- .SUBCKT DMT30M9LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0005801 RS 30 3 1E-015 RG 20 2 3.57 CGS 2 3 1.316E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.646 + TOX = 6E-008 NSUB = 1E+016 KP = 975.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.704E-009 VJ = 0.785 M = 0.8 .MODEL DSUB D IS = 4.197E-010 N = 1.139 RS = 4.441E-010 BV = 44 CJO = 1E-008 VJ = 0.8 M = 0.6 TT=4.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT30M9LPS Spice Model v1.0 Last Revised 2017/12/26 *---------- DMT30M9LPS Spice Model ---------- .SUBCKT DMT30M9LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0005801 RS 30 3 1E-015 RG 20 2 3.57 CGS 2 3 1.316E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.646 + TOX = 6E-008 NSUB = 1E+016 KP = 975.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.704E-009 VJ = 0.785 M = 0.8 .MODEL DSUB D IS = 4.197E-010 N = 1.139 RS = 4.441E-010 BV = 44 CJO = 1E-008 VJ = 0.8 M = 0.6 TT=4.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT30M9LPS Spice Model v1.0 Last Revised 2017/12/26 *---------- DMT31M1LPSW Spice Model ---------- .SUBCKT DMT31M1LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003313 RS 30 3 0.0001 RG 20 2 0.19 CGS 2 3 5.743E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.326 + TOX = 1E-007 NSUB = 6.249E+015 KP = 500 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.399E-009 VJ = 1.97 M = 0.9 .MODEL DSUB D IS = 1.126E-008 N = 1.338 RS = 4.441E-010 BV = 35.68 + CJO = 9.296E-009 VJ = 8 M = 0.6674 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT31M1LPSWQ Spice Model ---------- .SUBCKT DMT31M1LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003313 RS 30 3 0.0001 RG 20 2 0.19 CGS 2 3 5.743E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.326 + TOX = 1E-007 NSUB = 6.249E+015 KP = 500 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.399E-009 VJ = 1.97 M = 0.9 .MODEL DSUB D IS = 1.126E-008 N = 1.338 RS = 4.441E-010 BV = 35.68 + CJO = 9.296E-009 VJ = 8 M = 0.6674 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT31M6LPS Spice Model ---------- .SUBCKT DMT31M6LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-009 RS 30 3 0.001 RG 20 2 0.94 CGS 2 3 7.102E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.071 + TOX = 6E-008 NSUB = 1E+016 KP = 381.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3E-009 VJ = 0.8 M = 0.7165 .MODEL DSUB D IS = 2.338E-010 N = 1.114 RS = 0.00242 BV = 34 CJO = 5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT31M6LPS Spice Model v1.0M Last Revised 2016/8/31 *---------- DMT31M7LPS Spice Model ---------- .SUBCKT DMT31M7LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003678 RS 30 3 0.0001 RG 20 2 1.53 CGS 2 3 5.353E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.05 + TOX = 6E-008 NSUB = 1E+016 KP = 165 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.401E-009 VJ = 0.8 M = 0.6394 .MODEL DSUB D IS = 1.257E-009 N = 1.198 RS = 6.663E-005 BV = 32.63 + CJO = 4E-009 VJ = 0.8 M = 0.6 TT = 1.63E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT31M7LPS Spice Model v1.0J Last Revised 2018/10/04 *---------- DMT31M7LSS Spice Model ---------- .SUBCKT DMT31M7LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003678 RS 30 3 0.0001 RG 20 2 1.53 CGS 2 3 5.353E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.05 + TOX = 6E-008 NSUB = 1E+016 KP = 165 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.401E-009 VJ = 0.8 M = 0.6394 .MODEL DSUB D IS = 1.257E-009 N = 1.198 RS = 6.663E-005 BV = 32.63 + CJO = 4E-009 VJ = 0.8 M = 0.6 TT = 1.63E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT31M7LSS Spice Model v1.0J Last Revised 2018/10/04 *---------- DMT31M8LFVW Spice Model ---------- .SUBCKT DMT31M8LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0009624 RS 30 3 0.0001 RG 20 2 0.77 CGS 2 3 2.877E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.098E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.282 + TOX = 1E-007 NSUB = 1E+016 KP = 372.9 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.772E-010 VJ = 2.692 M = 0.9 .MODEL DSUB D IS = 4.357E-009 N = 1.331 RS = 0.0001322 BV = 35.82 + CJO = 4.865E-009 VJ = 10 M = 0.7413 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT31M8LFVWQ Spice Model ---------- .SUBCKT DMT31M8LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0009624 RS 30 3 0.0001 RG 20 2 0.77 CGS 2 3 2.877E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.098E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.282 + TOX = 1E-007 NSUB = 1E+016 KP = 372.9 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.772E-010 VJ = 2.692 M = 0.9 .MODEL DSUB D IS = 4.357E-009 N = 1.331 RS = 0.0001322 BV = 35.82 + CJO = 4.865E-009 VJ = 10 M = 0.7413 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT31M9LFVW Spice Model ---------- .SUBCKT DMT31M9LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0008375 RS 30 3 0.0001 RG 20 2 0.72 CGS 2 3 3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.335E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.293 + TOX = 1E-007 NSUB = 1E+016 KP = 350.8 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.266E-010 VJ = 2.57 M = 0.9 .MODEL DSUB D IS = 7.539E-009 N = 1.369 RS = 2.401E-005 BV = 36.53 + CJO = 4.622E-009 VJ = 8 M = 0.6221 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT31M9LFVWQ Spice Model ---------- .SUBCKT DMT31M9LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0008375 RS 30 3 0.0001 RG 20 2 0.72 CGS 2 3 3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.335E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.293 + TOX = 1E-007 NSUB = 1E+016 KP = 350.8 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.266E-010 VJ = 2.57 M = 0.9 .MODEL DSUB D IS = 7.539E-009 N = 1.369 RS = 2.401E-005 BV = 36.53 + CJO = 4.622E-009 VJ = 8 M = 0.6221 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/26 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT32M4LFG Spice Model ---------- .SUBCKT DMT32M4LFG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00052 RS 30 3 0.0001 RG 20 2 0.86 CGS 2 3 4.125E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.845E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2 + TOX = 1E-007 NSUB = 1E+016 KP = 218 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.45E-009 VJ = 0.75 M = 0.585 .MODEL DSUB D IS = 1E-008 N = 1.38 RS = 0.00041 BV = 33.99 + CJO = 3.1E-009 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/03/29 *---------- DMT32M4LPSW Spice Model ---------- .SUBCKT DMT32M4LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00058 RS 30 3 0.0001 RG 20 2 0.72 CGS 2 3 4.185E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.385E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.92 + TOX = 1E-007 NSUB = 1E+014 KP = 188 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.25E-009 VJ = 0.7 M = 0.585 .MODEL DSUB D IS = 1E-008 N = 1.38 RS = 0.00041 BV = 34.22 + CJO = 3.2E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.434E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/02/08 *---------- DMT32M4LPSWQ Spice Model ---------- .SUBCKT DMT32M4LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00058 RS 30 3 0.0001 RG 20 2 0.72 CGS 2 3 4.185E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.385E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.92 + TOX = 1E-007 NSUB = 1E+014 KP = 188 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.25E-009 VJ = 0.7 M = 0.585 .MODEL DSUB D IS = 1E-008 N = 1.38 RS = 0.00041 BV = 34.22 + CJO = 3.2E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.434E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/02/08 *---------- DMT32M5LFG Spice Model ---------- .SUBCKT DMT32M5LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5.43E-006 RS 30 3 0.001 RG 20 2 0.71 CGS 2 3 3.753E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 1 VTO = 1.7 TOX = 6E-008 KP = 299.5 .MODEL DCGD D CJO = 1.805E-009 VJ = 0.8 M = 0.6038 .MODEL DSUB D IS = 2.221E-010 N = 1.18 RS = 4.441E-010 BV = 38 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT32M5LFG Spice Model v1.0 Last Revised 2016/12/31 *---------- DMT32M5LPS Spice Model ---------- .SUBCKT DMT32M5LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5.43E-006 RS 30 3 0.001 RG 20 2 0.71 CGS 2 3 3.753E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 1 VTO = 1.7 TOX = 6E-008 KP = 299.5 .MODEL DCGD D CJO = 1.805E-009 VJ = 0.8 M = 0.6038 .MODEL DSUB D IS = 2.221E-010 N = 1.18 RS = 4.441E-010 BV = 38 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT32M5LPS Spice Model v1.0 Last Revised 2016/12/31 *---------- DMT32M5LPSW Spice Model ---------- .SUBCKT DMT32M5LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5.43E-006 RS 30 3 0.001 RG 20 2 0.71 CGS 2 3 3.753E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 1 VTO = 1.7 TOX = 6E-008 KP = 299.5 .MODEL DCGD D CJO = 1.805E-009 VJ = 0.8 M = 0.6038 .MODEL DSUB D IS = 2.221E-010 N = 1.18 RS = 4.441E-010 BV = 38 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT32M5LPSW Spice Model v1.0 Last Revised 2016/12/31 *---------- DMT32M6LDG Spice Model ---------- *Q1 .SUBCKT DMT32M6LDG_Q1 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00145 RS 30 3 0.0001 RG 20 2 0.55 CGS 2 3 2.025E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.85E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.9 + TOX = 1E-007 NSUB = 1E+016 KP = 480 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.5E-010 VJ = 0.8 M = 0.75 .MODEL DSUB D IS = 6E-009 N = 1.36 RS = 0.00041 BV = 35.76 + CJO = 3.25E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.85E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Q2 .SUBCKT DMT32M6LDG_Q2 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00173 RS 30 3 0.0001 RG 20 2 0.55 CGS 2 3 2.025E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.85E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.9 + TOX = 1E-007 NSUB = 1E+016 KP = 490 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.5E-010 VJ = 0.8 M = 0.75 .MODEL DSUB D IS = 6E-009 N = 1.35 RS = 0.0008 BV = 35.76 + CJO = 3.25E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.85E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/20 *---------- DMT32M7LDG Spice Model ---------- *Q1 .SUBCKT DMT32M7LDG_Q1 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001826 RS 30 3 0.0001 RG 20 2 0.6 CGS 2 3 2.076E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.58E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.952 + TOX = 1E-007 NSUB = 1.046E+014 KP = 237.5 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.853E-010 VJ = 1.918 M = 0.8709 .MODEL DSUB D IS = 4.002E-009 N = 1.328 RS = 0.0007004 BV = 35 + CJO = 2.53E-009 VJ = 2 M = 0.2803 XTI = 0 TT = 1.667E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Q2 .SUBCKT DMT32M7LDG_Q2 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001647 RS 30 3 0.0001 RG 20 2 0.54 CGS 2 3 2.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.22E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.958 + TOX = 1E-007 NSUB = 1E+014 KP = 262.2 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.212E-010 VJ = 2 M = 0.8464 .MODEL DSUB D IS = 3.39E-009 N = 1.315 RS = 0.0003841 BV = 35.71 + CJO = 2.538E-009 VJ = 2 M = 0.2852 XTI = 0 TT = 1.671E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/11/21 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT34M1LPS Spice Model ---------- .SUBCKT DMT34M1LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001128 RS 30 3 0.001 RG 20 2 0.94 CGS 2 3 2.402E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.5 + TOX = 6E-008 NSUB = 1E+016 KP = 192.5 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.697E-010 VJ = 0.8 M = 0.6455 .MODEL DSUB D IS = 7.376E-011 N = 1.098 RS = 0.00218 BV = 34 CJO = 1.8E-009 VJ = 0.8 M = 0.6 TT=1.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT34M1LPS Spice Model v1.0 Last Revised 2017/6/6 *---------- DMT34M2LPS Spice Model ---------- .SUBCKT DMT34M2LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001128 RS 30 3 0.001 RG 20 2 0.94 CGS 2 3 2.402E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.5 + TOX = 6E-008 NSUB = 1E+016 KP = 192.5 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.697E-010 VJ = 0.8 M = 0.6455 .MODEL DSUB D IS = 7.376E-011 N = 1.098 RS = 0.00218 BV = 34 CJO = 1.8E-009 VJ = 0.8 M = 0.6 TT=1.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT34M2LPS Spice Model v1.0 Last Revised 2017/6/6 *---------- DMT34M8LFDE Spice Model ---------- .SUBCKT DMT34M8LFDE 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003659 RS 30 3 1E-006 RG 20 2 1.91 CGS 2 3 9.75E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.5 + TOX = 1E-007 NSUB = 1E+014 KP = 177 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.96E-010 VJ = 0.65 M = 0.57 .MODEL DSUB D IS = 2.2E-009 N = 1.332 RS = 0.0009235 BV = 36.24 + CJO = 1.58E-009 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/04/12 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT35M1LFVW Spice Model ---------- .SUBCKT DMT35M1LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.95 CGS 2 3 5.955E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-012 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.235 + TOX = 1E-007 NSUB = 1E+014 KP = 60.1 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.97E-010 VJ = 1.59 M = 0.7855 .MODEL DSUB D IS = 8E-010 N = 1.244 RS = 0.002424 BV = 35.54 + CJO = 1.63E-009 VJ = 1.99 M = 0.3051 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/10/04 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT35M4LFDF Spice Model ---------- .SUBCKT DMT35M4LFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0017 RS 30 3 1E-006 RG 20 2 2.03 CGS 2 3 9.564E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.89E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+014 KP = 63 U0 = 600 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 2.673E-010 VJ = 0.8 M = 0.5609 .MODEL DSUB D IS = 1.772E-010 N = 1.164 RS = 0.003449 BV = 36.51 + CJO = 1.769E-009 VJ = 0.9 M = 0.3 TT = 1.47E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/08/20 .SUBCKT DMT35M4LFDF4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00405 RS 30 3 1E-006 RG 20 2 2 CGS 2 3 9.464E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.26 + TOX = 6E-008 NSUB = 1E+016 KP = 125 U0 = 500 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 2.973E-010 VJ = 0.6 M = 0.57 .MODEL DSUB D IS = 2.577E-009 N = 1.304 RS = 0.003449 BV = 36.91 + CJO = 1.879E-009 VJ = 0.9 M = 0.3 TT = 1.41E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2021/09/14 *---------- DMT35M4LFVW Spice Model ---------- .SUBCKT DMT35M4LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003 RS 30 3 0.0001 RG 20 2 2.18 CGS 2 3 9.589E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.39E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.917 + TOX = 1E-007 NSUB = 1E+015 KP = 120 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.942E-010 VJ = 0.8 M = 0.5102 .MODEL DSUB D IS = 7.138E-011 N = 1.113 RS = 0.003459 BV = 35.88 + CJO = 1.68E-009 VJ = 0.9 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/02/03 *---------- DMT35M4LPSW Spice Model ---------- .SUBCKT DMT35M4LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003316 RS 30 3 0.0001 RG 20 2 1.93 CGS 2 3 9.679E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.578E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.403 + TOX = 1E-007 NSUB = 3.837E+014 KP = 169.1 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.117E-010 VJ = 2 M = 0.78 .MODEL DSUB D IS = 2.35E-009 N = 1.33 RS = 0.002124 BV = 37 + CJO = 1.582E-009 VJ = 2 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/11/09 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT35M4LSS Spice Model ---------- .SUBCKT DMT35M4LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.002831 RS 30 3 0.0001 RG 20 2 1.97 CGS 2 3 6.087E-10 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.429 + TOX = 1E-07 NSUB = 1E+16 KP = 115.3 U0 = 580.9 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.233E-10 VJ = 1.083 M = 0.6566 .MODEL DSUB D IS = 1.842E-09 N = 1.303 RS = 0.00259 BV = 36.52 + CJO = 1.596E-09 VJ = 1.5 M = 0.2924 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/10/28 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT35M7LFV Spice Model ---------- .SUBCKT DMT35M7LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001532 RS 30 3 0.001 RG 20 2 0.94 CGS 2 3 1.419E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.65E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.591 + TOX = 6E-008 NSUB = 1E+016 KP = 129.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.939E-011 N = 1.109 RS = 0.001352 BV = 34 CJO = 1E-009 VJ = 0.8 M = 0.6 TT=8E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT35M7LFV Spice Model v1.0 Last Revised 2017/7/27 *---------- DMT35M8LDG_Q2 Spice Model ---------- .SUBCKT DMT35M8LDG_Q2 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00323 RS 30 3 0.0001 RG 20 2 1.3 CGS 2 3 9.95E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.15E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.9 + TOX = 1E-007 NSUB = 1E+016 KP = 250 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.2E-010 VJ = 0.8 M = 0.58 .MODEL DSUB D IS = 4.5E-009 N = 1.38 RS = 0.00075 BV = 35.46 + CJO = 1.55E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 9.29E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/12/23 *---------- DMT35M8LDG_Q1 Spice Model ---------- .SUBCKT DMT35M8LDG_Q1 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00134 RS 30 3 0.0001 RG 20 2 0.6 CGS 2 3 1.465E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.9 + TOX = 1E-007 NSUB = 1E+016 KP = 365 U0 = 700 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.2E-010 VJ = 0.7 M = 0.6 .MODEL DSUB D IS = 6E-009 N = 1.36 RS = 0.00058 BV = 35.46 + CJO = 2.25E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.222E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/12/22 *---------- DMT36M1LPS Spice Model ---------- .SUBCKT DMT36M1LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001846 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 1.248E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 + TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 .MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT36M1LPS Spice Model v1.0M Last Revised 2016/5/3 *---------- DMT3M60LPSW Spice Model ---------- .SUBCKT DMT3M60LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1.322E-005 RG 20 2 0.6 CGS 2 3 1.069E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.522 + TOX = 1E-007 NSUB = 1E+016 KP = 491.9 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.337E-009 VJ = 2.626 M = 0.9 .MODEL DSUB D IS = 7E-009 N = 1.279 RS = 5.516E-005 BV = 35.03 + CJO = 1.68E-008 VJ = 11.72 M = 0.9 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/05/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT3M70LPSW Spice Model ---------- .SUBCKT DMT3M70LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1.322E-005 RG 20 2 0.6 CGS 2 3 1.069E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.522 + TOX = 1E-007 NSUB = 1E+016 KP = 491.9 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.337E-009 VJ = 2.626 M = 0.9 .MODEL DSUB D IS = 7E-009 N = 1.279 RS = 5.516E-005 BV = 35.03 + CJO = 1.68E-008 VJ = 11.72 M = 0.9 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/05/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT3M70LPSWQ Spice Model ---------- .SUBCKT DMT3M70LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1.322E-005 RG 20 2 0.6 CGS 2 3 1.069E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.522 + TOX = 1E-007 NSUB = 1E+016 KP = 491.9 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.337E-009 VJ = 2.626 M = 0.9 .MODEL DSUB D IS = 7E-009 N = 1.279 RS = 5.516E-005 BV = 35.03 + CJO = 1.68E-008 VJ = 11.72 M = 0.9 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/05/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT4001LPS Spice Model ---------- .SUBCKT DMT4001LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0005801 RS 30 3 1E-015 RG 20 2 3.57 CGS 2 3 1.316E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.646 + TOX = 6E-008 NSUB = 1E+016 KP = 975.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.704E-009 VJ = 0.785 M = 0.8 .MODEL DSUB D IS = 4.197E-010 N = 1.139 RS = 4.441E-010 BV = 44 CJO = 1E-008 VJ = 0.8 M = 0.6 TT=4.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4001LPS Spice Model v1.0 Last Revised 2019/05/23 *---------- DMT4002LPS Spice Model ---------- .SUBCKT DMT4002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5E-008 RS 30 3 0.001 RG 20 2 0.85 CGS 2 3 6.987E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.461 + TOX = 6E-008 NSUB = 1E+016 KP = 290.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.21E-009 VJ = 0.8 M = 0.7963 .MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 45 CJO = 5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4002LPS Spice Model v1.0M Last Revised 2016/8/31 *---------- DMT4003SCT Spice Model ---------- .SUBCKT DMT4003SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001239 RS 30 3 0.001 RG 20 2 1.15 CGS 2 3 6.876E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.7 + TOX = 6E-008 NSUB = 1E+016 KP = 286.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.245E-010 VJ = 0.7374 M = 0.8 .MODEL DSUB D IS = 1.941E-009 N = 1.263 RS = 0.0001448 BV = 44.5 + CJO = 1.1E-008 VJ = 0.8 M = 0.6 TT = 2.97E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4003SCT Spice Model v1.0 Last Revised 2018/04/14 *---------- DMT4004LPS Spice Model ---------- .SUBCKT DMT4004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4004LPS Spice Model v1.0M Last Revised 2016/5/4 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT4004LPS Spice Model ---------- .SUBCKT DMT4004LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4004LPS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT4005SCT Spice Model ---------- .SUBCKT DMT4005SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4005SCT Spice Model v1.0M Last Revised 2016/6/1 *---------- DMT43M8LFV Spice Model ---------- .SUBCKT DMT43M8LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001199 RS 30 3 0.001 RG 20 2 2.12 CGS 2 3 3.173E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.25 + TOX = 6E-008 NSUB = 1E+016 KP = 183.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.684E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 2.822E-009 N = 1.283 RS = 8.816E-006 BV = 44.16 + CJO = 4.672E-009 VJ = 0.8 M = 0.6 TT = 1.383E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT43M8LFV Spice Model v1.0J Last Revised 2018/07/06 *---------- DMT4008LFDF Spice Model ---------- .SUBCKT DMT4008LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004748 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 1.14E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.95E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.287 + TOX = 6E-008 NSUB = 1E+016 KP = 105 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.976E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 8.355E-010 N = 1.275 RS = 0.003228 BV = 43.15 + CJO = 1.555E-009 VJ = 0.8 M = 0.6 TT = 9.91E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4008LFDF Spice Model v1.0J Last Revised 2018/06/28 ---------- DMT4008LFV Spice Model ---------- .SUBCKT DMT4008LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003751 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 1.146E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.95E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.277 + TOX = 6E-008 NSUB = 1E+016 KP = 99.68 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.288E-010 VJ = 0.8 M = 0.6552 .MODEL DSUB D IS = 2.229E-010 N = 1.195 RS = 0.002451 BV = 43.06 + CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 9.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4008LFV Spice Model v1.0J Last Revised 2018/06/08 ---------- DMT4008LFV Spice Model ---------- .SUBCKT DMT4008LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003751 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 1.146E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.95E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.277 + TOX = 6E-008 NSUB = 1E+016 KP = 99.68 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.288E-010 VJ = 0.8 M = 0.6552 .MODEL DSUB D IS = 2.229E-010 N = 1.195 RS = 0.002451 BV = 43.06 + CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 9.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4008LFV Spice Model v1.0J Last Revised 2018/06/08 *---------- DMT4008LSS Spice Model ---------- .SUBCKT DMT4008LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004407 RS 30 3 0.0001 RG 20 2 0.91 CGS 2 3 1.129E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.089 + TOX = 6E-008 NSUB = 1E+016 KP = 63 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 2.818E-010 VJ = 0.8 M = 0.7788 .MODEL DSUB D IS = 4.972E-010 N = 1.246 RS = 0.003716 BV = 43.39 + CJO = 9E-010 VJ = 0.8 M = 0.6 TT = 7.25E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4008LSS Spice Model v1.0J Last Revised 2018/01/25 *---------- DMT4011LFG Spice Model ---------- .SUBCKT DMT4011LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004622 RS 30 3 0.001 RG 20 2 0.98 CGS 2 3 7.377E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.084 + TOX = 6E-008 NSUB = 1E+016 KP = 50.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.891E-010 VJ = 0.8 M = 0.7987 .MODEL DSUB D IS = 4.2E-010 N = 1.244 RS = 0.006966 BV = 44 CJO = 5.719E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT4011LFG Spice Model v1.0 Last Revised 2016/10/28 *---------- DMT4011LSS Spice Model ---------- .SUBCKT DMT4011LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0053 RS 30 3 0.001 RG 20 2 0.29 CGS 2 3 8.103E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.22 + TOX = 6E-008 NSUB = 1E+016 KP = 58 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 2.77E-010 VJ = 0.8 M = 0.7895 .MODEL DSUB D IS = 1.758E-011 N = 1.098 RS = 0.005239 BV = 43.29 + CJO = 9E-010 VJ = 0.8 M = 0.6 TT = 5.95E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/04/29 *---------- DMT4014LDV Spice Model ---------- .SUBCKT DMT4014LDV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01033 RS 30 3 0.0001 RG 20 2 1.07 CGS 2 3 7.18E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.109 + TOX = 1E-007 NSUB = 1E+015 KP = 40 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.7E-010 VJ = 0.8 M = 0.6849 .MODEL DSUB D IS = 1.14E-008 N = 1.505 RS = 0.007493 BV = 42.97 + CJO = 5.1E-010 VJ = 0.9 M = 0.3206 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/09/10 *---------- DMT4015LDV Spice Model ---------- .SUBCKT DMT4015LDV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0117 RS 30 3 0.0001 RG 20 2 1.4 CGS 2 3 1.38E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 46 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.062E-010 VJ = 0.8 M = 0.6127 .MODEL DSUB D IS = 1.75E-009 N = 1.374 RS = 0.00738 BV = 65.3 + CJO = 5.2E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.335E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/07/21 *---------- DMT4031LFDF Spice Model ---------- .SUBCKT DMT4031LFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.011 RS 30 3 0.0001 RG 20 2 1.33 CGS 2 3 3.456E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.79E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.81 + TOX = 1E-007 NSUB = 1E+015 KP = 21 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.21E-010 VJ = 0.8 M = 0.5389 .MODEL DSUB D IS = 6.4E-009 N = 1.483 RS = 0.007887 BV = 42.68 + CJO = 2.53E-010 VJ = 0.9 M = 0.3004 XTI = 0 TT = 9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/07 *---------- DMT4031LSD Spice Model ---------- .SUBCKT DMT4031LSD 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.011 RS 30 3 0.0001 RG 20 2 1.33 CGS 2 3 3.456E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.79E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.81 + TOX = 1E-007 NSUB = 1E+015 KP = 21 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.21E-010 VJ = 0.8 M = 0.5389 .MODEL DSUB D IS = 6.4E-009 N = 1.483 RS = 0.007887 BV = 42.68 + CJO = 2.53E-010 VJ = 0.9 M = 0.3004 XTI = 0 TT = 9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/07 *---------- DMT40M9LPS Spice Model ---------- .SUBCKT DMT40M9LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0005801 RS 30 3 1E-015 RG 20 2 3.57 CGS 2 3 1.316E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.646 + TOX = 6E-008 NSUB = 1E+016 KP = 975.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.704E-009 VJ = 0.785 M = 0.8 .MODEL DSUB D IS = 4.197E-010 N = 1.139 RS = 4.441E-010 BV = 44 CJO = 1E-008 VJ = 0.8 M = 0.6 TT=4.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT40M9LPS Spice Model v1.0 Last Revised 2017/12/26 *---------- DMT43M8LFV Spice Model ---------- .SUBCKT DMT43M8LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001199 RS 30 3 0.001 RG 20 2 2.12 CGS 2 3 3.173E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.25 + TOX = 6E-008 NSUB = 1E+016 KP = 183.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.684E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 2.822E-009 N = 1.283 RS = 8.816E-006 BV = 44.16 + CJO = 4.672E-009 VJ = 0.8 M = 0.6 TT = 1.383E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT43M8LFV Spice Model v1.0J Last Revised 2018/07/06 *---------- DMT47M2LDV Spice Model ---------- .SUBCKT DMT47M2LDV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007004 RS 30 3 0.001 RG 20 2 0.61 CGS 2 3 8.998E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.9 + TOX = 6E-008 NSUB = 1E+016 KP = 90 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.233E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.902E-011 N = 1.116 RS = 0.006741 BV = 42.39 + CJO = 1.4E-009 VJ = 0.8 M = 0.6 TT = 2.83E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/05/08 *---------- DMT47M2LDV Spice Model ---------- .SUBCKT DMT47M2LDV 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007004 RS 30 3 0.001 RG 20 2 0.61 CGS 2 3 8.998E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.9 + TOX = 6E-008 NSUB = 1E+016 KP = 90 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.233E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.902E-011 N = 1.116 RS = 0.006741 BV = 42.39 + CJO = 1.4E-009 VJ = 0.8 M = 0.6 TT = 2.83E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/05/08 *---------- DMT47M2LDVQ Spice Model ---------- .SUBCKT DMT47M2LDVQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007004 RS 30 3 0.001 RG 20 2 0.61 CGS 2 3 8.998E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.9 + TOX = 6E-008 NSUB = 1E+016 KP = 90 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.233E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 6.902E-011 N = 1.116 RS = 0.006741 BV = 42.39 + CJO = 1.4E-009 VJ = 0.8 M = 0.6 TT = 2.83E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/05/08 *---------- DMT47M2SFVW Spice Model ---------- .SUBCKT DMT47M2SFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0034 RS 30 3 0.001 RG 20 2 2.07 CGS 2 3 9.027E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.226 + TOX = 6E-008 NSUB = 1E+016 KP = 102 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.206E-010 VJ = 0.8 M = 0.7968 .MODEL DSUB D IS = 3.398E-012 N = 1.059 RS = 0.002401 + BV = 42.14 CJO = 1.8E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/04/20 *---------- DMT47M2SFVWQ Spice Model ---------- .SUBCKT DMT47M2SFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0034 RS 30 3 0.001 RG 20 2 2.07 CGS 2 3 9.027E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.226 + TOX = 6E-008 NSUB = 1E+016 KP = 102 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.206E-010 VJ = 0.8 M = 0.7968 .MODEL DSUB D IS = 3.398E-012 N = 1.059 RS = 0.002401 + BV = 42.14 CJO = 1.8E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/04/20 *---------- DMT5012LFVW Spice Model ---------- .SUBCKT DMT5012LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0062 RS 30 3 0.0001 RG 20 2 1.61 CGS 2 3 7E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.64E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 52 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.061E-010 VJ = 0.8 M = 0.764 .MODEL DSUB D IS = 2.694E-012 N = 1.065 RS = 0.004746 BV = 56.16 + CJO = 7.311E-010 VJ = 0.9 M = 0.3 TT = 2.01E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/02/14 *---------- DMT5015LFDF Spice Model ---------- .SUBCKT DMT5015LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008659 RS 30 3 0.001 RG 20 2 1.9 CGS 2 3 9.188E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.916 + TOX = 6E-008 NSUB = 1E+016 KP = 47.24 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.116E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.682E-010 N = 1.238 RS = 0.007384 BV = 50 CJO = 7.542E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT5015LFDF Spice Model v1.0 Last Revised 2015/12/15 *---------- DMT6002LPS Spice Model ---------- .SUBCKT DMT6002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 0.68 CGS 2 3 8E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.549 + TOX = 6E-008 NSUB = 1E+016 KP = 212 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.254E-009 VJ = 0.8 M = 0.6192 .MODEL DSUB D IS = 2.249E-010 N = 1.121 RS = 0.0001411 BV = 68 CJO = 4.5E-009 VJ = 0.8 M = 0.6 TT = 3.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6002LPS Spice Model v1.0M Last Revised 2016/8/31 *---------- DMT6004LPS Spice Model ---------- .SUBCKT DMT6004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001798 RS 30 3 0.001659 RG 20 2 0.64 CGS 2 3 4.923E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.095 + TOX = 6E-008 NSUB = 1E+016 KP = 287.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.864E-009 VJ = 1 M = 0.7538 .MODEL DSUB D IS = 1.026E-008 N = 1.357 RS = 4.441E-010 BV = 65 CJO = 3E-009 VJ = 0.8 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6004LPS Spice Model v1.0 Last Revised 2015/6/5 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT6004LPSW Spice Model ---------- .SUBCKT DMT6004LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001798 RS 30 3 0.001659 RG 20 2 0.64 CGS 2 3 4.923E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.095 + TOX = 6E-008 NSUB = 1E+016 KP = 287.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.864E-009 VJ = 1 M = 0.7538 .MODEL DSUB D IS = 1.026E-008 N = 1.357 RS = 4.441E-010 BV = 65 CJO = 3E-009 VJ = 0.8 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6004LPS Spice Model v1.0 Last Revised 2015/6/5 *---------- DMT6004SCT Spice Model ---------- .SUBCKT DMT6004SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6004SCT Spice Model v1.0M Last Revised 2016/4/6 *---------- DMT6004SPS Spice Model ---------- .SUBCKT DMT6004SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6004SPS Spice Model v1.0M Last Revised 2018/2/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT6004SPS Spice Model ---------- .SUBCKT DMT6004SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6004SPS Spice Model v1.0M Last Revised 2018/2/1 *---------- DMT6005LCT Spice Model ---------- .SUBCKT DMT6005LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6005LCT Spice Model v1.0M Last Revised 2016/6/1 *---------- DMT6005LFG Spice Model ---------- .SUBCKT DMT6005LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.831E-005 RS 30 3 0.001 RG 20 2 0.7 CGS 2 3 3.129E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.35E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.133 + TOX = 6E-008 NSUB = 1E+016 KP = 101.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.169E-010 VJ = 0.8 M = 0.7885 .MODEL DSUB D IS = 1.312E-010 N = 1.121 RS = 4.441E-010 BV = 65.53 + CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 2.04E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6005LFG Spice Model v1.0J Last Revised 2018/09/12 *---------- DMT6005LPS Spice Model ---------- .SUBCKT DMT6005LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6005LPS Spice Model v1.0M Last Revised 2016/4/20 *---------- DMT6005LSS Spice Model ---------- .SUBCKT DMT6005LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001828 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 3.208E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.908 + TOX = 6E-008 NSUB = 1E+016 KP = 92.19 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.295E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 7.508E-009 N = 1.396 RS = 0.0001377 BV = 60 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 2E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6005LSS Spice Model v1.0M Last Revised 2016/3/30 *---------- DMT6006LK3 Spice Model ---------- .SUBCKT DMT6006LK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0033 RS 30 3 0.0001 RG 20 2 0.7 CGS 2 3 2.1E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.12E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.378 + TOX = 1E-007 NSUB = 1E+015 KP = 112 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.9 .MODEL DSUB D IS = 8E-009 N = 1.451 RS = 0.001131 BV = 63.86 + CJO = 1.5E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.79E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/7 *---------- DMT6006LSS Spice Model ---------- .SUBCKT DMT6006LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0037 RS 30 3 0.0001 RG 20 2 0.7 CGS 2 3 2.1E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.263 + TOX = 1E-007 NSUB = 1E+015 KP = 138 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 2.753E-011 N = 1.074 RS = 0.003831 BV = 65.18 + CJO = 1.7E-009 VJ = 0.9 M = 0.3481 TT = 1.79E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/12 *---------- DMT6006SPS Spice Model ---------- .SUBCKT DMT6006SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-005 RS 30 3 0.001 RG 20 2 0.6 CGS 2 3 1.67E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.9 + TOX = 6E-008 NSUB = 1E+016 KP = 47 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 8.986E-010 VJ = 0.779 M = 0.8 .MODEL DSUB D IS = 8.712E-012 N = 1.064 RS = 0.0002301 BV = 64.64 CJO = 4.736E-009 VJ = 0.8 M = 0.6072 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6006SPS Spice Model v1.0W Last Revised 2019/04/10 *---------- DMT6007LFG Spice Model ---------- .SUBCKT DMT6007LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001863 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.146E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.341 + TOX = 6E-008 NSUB = 1E+016 KP = 111 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.665E-010 VJ = 0.8 M = 0.7124 .MODEL DSUB D IS = 2.3E-010 N = 1.161 RS = 0.002386 BV = 60 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6007LFG Spice Model v1.0 Last Revised 2015/11/18 *---------- DMT6007LFGQ Spice Model ---------- .SUBCKT DMT6007LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001863 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.146E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.341 + TOX = 6E-008 NSUB = 1E+016 KP = 111 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.665E-010 VJ = 0.8 M = 0.7124 .MODEL DSUB D IS = 2.3E-010 N = 1.161 RS = 0.002386 BV = 60 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6007LFGQ Spice Model v1.0 Last Revised 2015/11/18 *---------- DMT6008LFG Spice Model ---------- .SUBCKT DMT6008LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001564 RS 30 3 0.001 RG 20 2 0.72 CGS 2 3 2.16E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 + DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 1.663 + TOX = 6E-008 NSUB = 1E+016 KP = 72.59 U0 = 400 KAPPA = 4.441E-011 .MODEL DCGD D CJO = 4.802E-010 VJ = 3.157 M = 1.442 .MODEL DSUB D IS = 3.784E-010 N = 1.165 RS = 0.004441 + BV = 65 CJO = 1.266E-009 VJ = 17.3 M = 0.9348 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNT6008LFG Spice Model v1.0 Last Revised 2013/10/31 *---------- DMT6009LCT Spice Model ---------- .SUBCKT DMT6009LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LCT Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT6009LFG Spice Model ---------- .SUBCKT DMT6009LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LFG Spice Model v1.0 Last Revised 2015/7/27 *---------- DMT6009LJ3 Spice Model ---------- .SUBCKT DMT6009LJ3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0057 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 2.041E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.8 + TOX = 6E-008 NSUB = 1E+016 KP = 98 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.238E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.479E-010 N = 1.102 RS = 0.01196 BV = 67.41 + CJO = 1.3E-009 VJ = 0.8 M = 0.6 TT = 9.1E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LJ3 Spice Model v1.0J Last Revised 2018/08/20 *---------- DMT6009LK3 Spice Model ---------- .SUBCKT DMT6009LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LK3 Spice Model v1.0 Last Revised 2015/7/27 *---------- DMT6009LPS Spice Model ---------- .SUBCKT DMT6009LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LPS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT6009LSS Spice Model ---------- .SUBCKT DMT6009LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6009LSS Spice Model v1.0 Last Revised 2015/10/22 *---------- DMT6010LFG Spice Model ---------- .SUBCKT DMT6010LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003535 RS 30 3 0.001 RG 20 2 0.6 CGS 2 3 2.137E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.226 + TOX = 6E-008 NSUB = 1E+016 KP = 85.27 U0 = 400 KAPPA = 38.28 .MODEL DCGD D CJO = 7.629E-010 VJ = 2.052 M = 1.442 .MODEL DSUB D IS = 3.784E-010 N = 1.165 RS = 0.004441 + BV = 65 CJO = 1.489E-009 VJ = 2.873 M = 0.3016 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNT6010LFG Spice Model v1.0 Last Revised 2018/2/1 *---------- DMT6010LPS Spice Model ---------- .SUBCKT DMT6010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003535 RS 30 3 0.001 RG 20 2 0.6 CGS 2 3 2.137E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.226 + TOX = 6E-008 NSUB = 1E+016 KP = 85.27 U0 = 400 KAPPA = 38.28 .MODEL DCGD D CJO = 7.629E-010 VJ = 2.052 M = 1.442 .MODEL DSUB D IS = 3.784E-010 N = 1.165 RS = 0.004441 + BV = 65 CJO = 1.489E-009 VJ = 2.873 M = 0.3016 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNT6010LPS Spice Model v1.0 Last Revised 2018/2/1 *---------- DMT6010LSS Spice Model ---------- .SUBCKT DMT6010LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003535 RS 30 3 0.001 RG 20 2 0.6 CGS 2 3 2.137E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.226 + TOX = 6E-008 NSUB = 1E+016 KP = 85.27 U0 = 400 KAPPA = 38.28 .MODEL DCGD D CJO = 7.629E-010 VJ = 2.052 M = 1.442 .MODEL DSUB D IS = 3.784E-010 N = 1.165 RS = 0.004441 + BV = 65 CJO = 1.489E-009 VJ = 2.873 M = 0.3016 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNT6010LSS Spice Model v1.0 Last Revised 2013/9/9 *---------- DMT6010SCT Spice Model ---------- .SUBCKT DMT6010SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6010SCT Spice Model v1.0M Last Revised 2016/4/7 *---------- DMT6011LPDW Spice Model ---------- .SUBCKT DMT6011LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.0001 RG 20 2 1.42 CGS 2 3 1.02E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.3 + TOX = 1E-007 NSUB = 1E+015 KP = 50 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.004E-010 VJ = 0.8 M = 0.8314 .MODEL DSUB D IS = 1E-008 N = 1.482 RS = 0.00421 BV = 65.62 + CJO = 7.3E-010 VJ = 4.5 M = 0.5024 XTI = 0 TT = 1.53E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/03/25 *---------- DMT6011LSS Spice Model ---------- .SUBCKT DMT6011LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005 RS 30 3 0.0001 RG 20 2 1.42 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.232 + TOX = 1E-007 NSUB = 1E+015 KP = 60 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.9E-010 VJ = 0.8 M = 0.8261 .MODEL DSUB D IS = 3.597E-010 N = 1.25 RS = 0.003275 BV = 66 + CJO = 7.5E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.53E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/07/30 *---------- DMT6012LFV Spice Model ---------- .SUBCKT DMT6012LFV D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0048 RS 30 3 0.001 RG 20 2 1.41 CGS 2 3 1.501E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.999 + TOX = 6E-008 NSUB = 1E+016 KP = 72 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 4.485E-010 VJ = 0.7906 M = 0.8 .MODEL DSUB D IS = 2.882E-010 N = 1.178 RS = 0.003804 BV = 64.31 CJO = 2.103E-009 VJ = 0.8 M = 0.6 TT = 1.29E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6012LFV Spice Model v1.0W Last Revised 2018/12/5 *---------- DMT6012LPSW Spice Model ---------- .SUBCKT DMT6012LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0068 RS 30 3 0.0001 RG 20 2 1.41 CGS 2 3 1.495E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.88E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.291 + TOX = 1E-007 NSUB = 1E+015 KP = 80 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.19E-010 VJ = 0.8 M = 0.593 .MODEL DSUB D IS = 5.41E-011 N = 1.145 RS = 0.004971 BV = 64.89 + CJO = 7.656E-010 VJ = 0.9 M = 0.3 TT = 1.29E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/12 *---------- DMT6012LSS Spice Model ---------- .SUBCKT DMT6012LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007481 RS 30 3 1E-015 RG 20 2 1.41 CGS 2 3 1.509E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.992 + TOX = 6E-008 NSUB = 1E+016 KP = 123.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.662E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 2.294E-010 N = 1.22 RS = 0.01182 BV = 68 CJO = 7.047E-010 VJ = 0.8 M = 0.6 TT = 1.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6012LSS Spice Model v1.0 Last Revised 2018/3/14 *---------- DMT6013LFDF Spice Model ---------- .SUBCKT DMT6013LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005101 RS 30 3 0.001 RG 20 2 1.22 CGS 2 3 1.068E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.073 + TOX = 6E-008 NSUB = 1E+016 KP = 43 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.02E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 8.164E-011 N = 1.165 RS = 0.005479 BV = 66.62 + CJO = 1.5E-009 VJ = 0.8 M = 0.6 TT = 9.85E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6013LFDF Spice Model v1.0J Last Revised 2018/06/13 *---------- DMT6013LSS Spice Model ---------- .SUBCKT DMT6013LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005101 RS 30 3 0.001 RG 20 2 1.22 CGS 2 3 1.068E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.073 + TOX = 6E-008 NSUB = 1E+016 KP = 43 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.02E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 8.164E-011 N = 1.165 RS = 0.005479 BV = 66.62 + CJO = 1.5E-009 VJ = 0.8 M = 0.6 TT = 9.85E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6013LSS Spice Model v1.0J Last Revised 2018/06/13 *---------- DMT6015LFV Spice Model ---------- .SUBCKT DMT6015LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008244 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.107E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 40.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.204E-010 VJ = 0.8 M = 0.6777 .MODEL DSUB D IS = 1.257E-009 N = 1.322 RS = 0.005675 BV = 60 CJO = 5.719E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6015LFV Spice Model v1.0M Last Revised 2016/5/26 *---------- DMT6015LFVW Spice Model ---------- .SUBCKT DMT6015LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0075 RS 30 3 0.0001 RG 20 2 1.4 CGS 2 3 7.803E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.39E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.232 + TOX = 1E-007 NSUB = 1E+015 KP = 48.49 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.107E-010 VJ = 0.8 M = 0.7645 .MODEL DSUB D IS = 9.5E-009 N = 1.508 RS = 0.003036 BV = 66 + CJO = 5.2E-010 VJ = 0.9 M = 0.3147 XTI = 0 TT = 1.335E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/07/21 *---------- DMT6015LPDW Spice Model ---------- .SUBCKT DMT6015LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0112 RS 30 3 0.0001 RG 20 2 1.4 CGS 2 3 7.7E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.15 + TOX = 1E-007 NSUB = 1E+015 KP = 59 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.7685 .MODEL DSUB D IS = 3.111E-011 N = 1.112 RS = 0.009112 BV = 65.1 + CJO = 6.158E-010 VJ = 0.9 M = 0.3473 TT = 1.335E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/03/04 *---------- DMT6015LPS Spice Model ---------- .SUBCKT DMT6015LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008244 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.107E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 40.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.204E-010 VJ = 0.8 M = 0.6777 .MODEL DSUB D IS = 1.257E-009 N = 1.322 RS = 0.005675 BV = 60 CJO = 5.719E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6015LPS Spice Model v1.0 Last Revised 2015/10/27 *---------- DMT6015LSS Spice Model ---------- .SUBCKT DMT6015LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008244 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.107E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 40.42 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.204E-010 VJ = 0.8 M = 0.6777 .MODEL DSUB D IS = 1.257E-009 N = 1.322 RS = 0.005675 BV = 60 CJO = 5.719E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6015LSS Spice Model v1.0M Last Revised 2016/5/4 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/12/2014 *VERSION=1 .SUBCKT DMT6016LFDF 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 6E-3 RS 23 3 Rmod1 6E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 740E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 660E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.00015 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.77 TOX=7.5E-8 NSUB=7.5E+16 KP=120 NFS=7E+11 IS=.5E-15 N=10) .MODEL DCGD D (CJO = 320E-12 VJ = 0.42 M = 0.4 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.004 BV=66 CJO=500E-12 VJ=0.42 M=0.5 TT=18E-9 TRS1=2E-3 IKF=10) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.5e-3 TC2=6E-6) .ENDS *---------- DMT6016LND Spice Model ---------- *NMOS .SUBCKT DMC6070LFDH_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.04411 RS 30 3 0.001 RG 20 2 1.31 CGS 2 3 7.136E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 + TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS *---------- DMC6070LFD_P Spice Model ---------- .SUBCKT DMC6070LFD_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1006 RS 30 3 0.001 RG 20 2 13.07 CGS 2 3 5.928E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 6.038 KAPPA = 19.32 VTO = -2.241 .MODEL DCGD D CJO = 8.101E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 4.484E-010 N = 1.368 RS = 0.02186 BV = 60 CJO = 7.164E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6016LND Spice Model v1.0 Last Revised 2015/9/7 *---------- DMT6016LPS Spice Model ---------- .SUBCKT DMT6016LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6016LPS Spice Model v1.0 Last Revised 2015/11/10 *---------- DMT6016LPSW Spice Model ---------- .SUBCKT DMT6016LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6016LPSW Spice Model v1.0 Last Revised 2015/11/10 *---------- DMT6016LSS Spice Model ---------- .SUBCKT DMT6016LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008248 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.551E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 44 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.956E-010 VJ = 0.8 M = 0.6557 .MODEL DSUB D IS = 3.752E-008 N = 1.624 RS = 0.005938 BV = 65 CJO = 5.236E-010 VJ = 1 M = 0.2051 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6016LSS Spice Model v1.0 Last Revised 2014/12/19 *---------- DMT6017LDV Spice Model ---------- .SUBCKT DMT6017LDV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006495 RS 30 3 0.001 RG 20 2 1.57 CGS 2 3 8.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.05 + TOX = 6E-008 NSUB = 1E+016 KP = 36.11 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.261E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.648E-010 N = 1.243 RS = 0.00339 BV = 69.18 + CJO = 9.808E-010 VJ = 0.8 M = 0.6 TT = 1.055E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6017LDV Spice Model v1.0J Last Revised 2019/05/29 *---------- DMT6017LFDF Spice Model ---------- .SUBCKT DMT6017LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004325 RS 30 3 0.004879 RG 20 2 1.57 CGS 2 3 8.697E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.822 + TOX = 6E-008 NSUB = 1E+016 KP = 40.1 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 4.226E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.386E-010 N = 1.179 RS = 0.002244 BV = 69.57 CJO = 1.017E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6017LFDF Spice Model v1.0W Last Revised 2019/06/24 *---------- DMT6017LFV Spice Model ---------- .SUBCKT DMT6017LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006495 RS 30 3 0.001 RG 20 2 1.57 CGS 2 3 8.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.05 + TOX = 6E-008 NSUB = 1E+016 KP = 36.11 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.261E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.648E-010 N = 1.243 RS = 0.00339 BV = 69.18 + CJO = 9.808E-010 VJ = 0.8 M = 0.6 TT = 1.055E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6017LFV Spice Model v1.0J Last Revised 2018/06/22 *---------- DMT6017LFV Spice Model ---------- .SUBCKT DMT6017LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006495 RS 30 3 0.001 RG 20 2 1.57 CGS 2 3 8.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.05 + TOX = 6E-008 NSUB = 1E+016 KP = 36.11 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.261E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.648E-010 N = 1.243 RS = 0.00339 BV = 69.18 + CJO = 9.808E-010 VJ = 0.8 M = 0.6 TT = 1.055E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6017LFV Spice Model v1.0J Last Revised 2018/06/22 *---------- DMT6017LSS Spice Model ---------- .SUBCKT DMT6017LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008248 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.551E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 44 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.956E-010 VJ = 0.8 M = 0.6557 .MODEL DSUB D IS = 3.752E-008 N = 1.624 RS = 0.005938 BV = 65 CJO = 5.236E-010 VJ = 1 M = 0.2051 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6017LSS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT6018LDR Spice Model ---------- .SUBCKT DMT6018LDR 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009389 RS 30 3 0.001 RG 20 2 1.11 CGS 2 3 9.122E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.613 + TOX = 6E-008 NSUB = 1E+016 KP = 55.32 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8E-011 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.369E-010 N = 1.263 RS = 0.00377 BV = 67 CJO = 5.5E-010 VJ = 0.8 M = 0.6 TT=1.02E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6018LDR Spice Model v1.0 Last Revised 2017/7/6 *---------- DMT6030LFCL Spice Model ---------- .SUBCKT DMT6030LFCL 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.014 RS 30 3 0.0001 RG 20 2 1.39 CGS 2 3 6.29E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.02E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.812 + TOX = 1E-007 NSUB = 1E+015 KP = 29 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.502E-010 VJ = 0.8 M = 0.7595 .MODEL DSUB D IS = 1.65E-009 N = 1.33 RS = 0.007661 BV = 64.03 + CJO = 3E-010 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/09/10 *---------- DMT6030LFDF Spice Model ---------- .SUBCKT DMT6030LFDF 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.012 RS 30 3 1E-006 RG 20 2 1.39 CGS 2 3 1.671E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.944 + TOX = 2.688E-007 NSUB = 1E+016 KP = 30 U0 = 951.6 KAPPA = 10 .MODEL DCGD D CJO = 9.216E-010 VJ = 0.7491 M = 0.8 .MODEL DSUB D IS = 1.575E-010 N = 1.206 RS = 0.01261 BV = 64.96 CJO = 3.39E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6030LFDF Spice Model v1.0W Last Revised 2019/05/29 *---------- DMT615MLFV Spice Model ---------- .SUBCKT DMT615MLFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005979 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 + TOX = 6E-008 NSUB = 1E+016 KP = 35 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.3E-010 VJ = 0.8 M = 0.6194 .MODEL DSUB D IS = 1.648E-010 N = 1.243 RS = 0.00339 BV = 65 + CJO = 9.808E-010 VJ = 0.8 M = 0.6 TT = 1.03E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT615MLFV Spice Model v1.0J Last Revised 2018/07/10 *---------- DMT616MLSS Spice Model ---------- .SUBCKT DMT616MLSS D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0056 RS 30 3 0.001 RG 20 2 1.5 CGS 2 3 7.65E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.26 + TOX = 6E-008 NSUB = 1E+016 KP = 43 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 4.469E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 1.321E-011 N = 1.099 RS = 0.006611 BV = 64.17 CJO = 1.712E-009 VJ = 0.8 M = 0.6036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT616MLSS Spice Model v1.0W Last Revised 2019/01/24 *---------- DMT61M5SPSW Spice Model ---------- .SUBCKT DMT61M5SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00015 RS 30 3 1E-006 RG 20 2 2.96 CGS 2 3 8.3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.78E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 6.366E+004 ETA = 0 VTO = 2.944 + TOX = 1.72E-007 NSUB = 1E+015 KP = 137 U0 = 400 KAPPA = 1.37E-007 IS = 0 .MODEL DCGD D CJO = 2.45E-009 VJ = 0.8 M = 0.9 .MODEL DSUB D IS = 7.35E-009 N = 1.309 RS = 4.441E-010 BV = 66.13 + CJO = 5.3E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.52E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/25 *The model can only be used at 25 degC *---------- DMTH61M8SPS Spice Model ---------- .SUBCKT DMTH61M8SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.96 CGS 2 3 8.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.16 + TOX = 1E-007 NSUB = 1E+015 KP = 170 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.571E-009 VJ = 0.8 M = 0.7717 .MODEL DSUB D IS = 2.995E-011 N = 1.037 RS = 0.001131 BV = 66.13 + CJO = 5E-009 VJ = 0.9 M = 0.3065 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/02/11 *---------- DMT62M7SPSW Spice Model ---------- .SUBCKT DMT62M7SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00075 RS 30 3 1E-06 RG 20 2 0.81 CGS 2 3 4.9E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 3.5 + TOX = 1E-07 NSUB = 1E+15 KP = 111 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.5E-10 VJ = 0.7661 M = 0.9 .MODEL DSUB D IS = 8.761E-09 N = 1.432 RS = 0.0001125 BV = 63.36 + CJO = 3.3E-09 VJ = 0.9 M = 0.306 XTI = 0 TT = 2.67E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/10/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT63M5LFG Spice Model ---------- .SUBCKT DMT63M5LFG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001437 RS 30 3 0.0001 RG 20 2 0.74 CGS 2 3 2.293E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.125E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.242 + TOX = 1E-007 NSUB = 1E+014 KP = 140.7 U0 = 304.6 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.066E-009 VJ = 2 M = 0.9 .MODEL DSUB D IS = 2.992E-009 N = 1.314 RS = 0.002161 BV = 62.53 + CJO = 1.982E-009 VJ = 2 M = 0.3 XTI = 0 TT = 2.231E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/24 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT64M1LCG Spice Model ---------- .SUBCKT DMT64M1LCG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0027 RS 30 3 0.0001 RG 20 2 1.21 CGS 2 3 2.52E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.27E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.236 + TOX = 1E-007 NSUB = 1E+015 KP = 140 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.2E-010 VJ = 0.8 M = 0.8883 .MODEL DSUB D IS = 7.8E-009 N = 1.417 RS = 0.001039 BV = 67.1 + CJO = 2.08E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 2.24E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/11/08 *---------- DMT64M1LPSW Spice Model ---------- .SUBCKT DMT64M1LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0025 RS 30 3 0.0001 RG 20 2 1.21 CGS 2 3 2.5E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.36E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.3 + TOX = 1E-007 NSUB = 1E+014 KP = 160 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.5E-009 VJ = 0.9 M = 0.8 .MODEL DSUB D IS = 3.3E-009 N = 1.37 RS = 1E-009 BV = 67.32 + CJO = 5E-009 VJ = 0.8 M = 0.6 XTI = 0 TT = 2.24E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/07/02 *---------- DMT64M2LPSW Spice Model ---------- .SUBCKT DMT64M2LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0011 RS 30 3 0.001 RG 20 2 0.63 CGS 2 3 2.776E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.316 + TOX = 6E-008 NSUB = 1E+016 KP = 153.6 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 9.63E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 4.423E-011 N = 1.071 RS = 0.0007849 BV = 64.72 CJO = 5.103E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT64M2LPSW Spice Model v1.0W Last Revised 2019/06/12 *---------- DMT64M3SK3 Spice Model ---------- .SUBCKT DMT64M3SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.002038 RS 30 3 0.0001 RG 20 2 0.65 CGS 2 3 5.947E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.86E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 3.768 + TOX = 1E-07 NSUB = 1E+14 KP = 164.6 U0 = 311.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.558E-10 VJ = 0.7621 M = 0.6036 .MODEL DSUB D IS = 1.392E-08 N = 1.447 RS = 0.001171 BV = 65.95 + CJO = 2.977E-09 VJ = 1.5 M = 0.2362 XTI = 0 TT = 2.739E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/10/29 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT64M3SK3 Spice Model ---------- .SUBCKT DMT64M3SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.002038 RS 30 3 0.0001 RG 20 2 0.65 CGS 2 3 5.947E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.86E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 3.768 + TOX = 1E-07 NSUB = 1E+14 KP = 164.6 U0 = 311.4 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.558E-10 VJ = 0.7621 M = 0.6036 .MODEL DSUB D IS = 1.392E-08 N = 1.447 RS = 0.001171 BV = 65.95 + CJO = 2.977E-09 VJ = 1.5 M = 0.2362 XTI = 0 TT = 2.739E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/10/29 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT64M8LCG Spice Model ---------- .SUBCKT DMT64M8LCG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.0001 RG 20 2 0.76 CGS 2 3 2.6E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.688E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.1 + TOX = 1E-007 NSUB = 1E+015 KP = 125 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.167E-009 VJ = 0.8 M = 0.8837 .MODEL DSUB D IS = 9.7E-009 N = 1.377 RS = 0.0004363 BV = 66 + CJO = 1.9E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 2.05E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/07/30 *---------- DMT64M8LSS Spice Model ---------- .SUBCKT DMT64M8LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.0001 RG 20 2 0.76 CGS 2 3 2.55E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.75E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 130 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.14E-009 VJ = 0.8 M = 0.8827 .MODEL DSUB D IS = 7.5E-009 N = 1.39 RS = 0.001405 BV = 64.03 + CJO = 2E-009 VJ = 0.9 M = 0.3116 XTI = 0 TT = 2.05E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMT64M8LSS Spice Model ---------- .SUBCKT DMT64M8LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.0001 RG 20 2 0.76 CGS 2 3 2.55E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.75E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 130 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.14E-009 VJ = 0.8 M = 0.8827 .MODEL DSUB D IS = 7.5E-009 N = 1.39 RS = 0.001405 BV = 64.03 + CJO = 2E-009 VJ = 0.9 M = 0.3116 XTI = 0 TT = 2.05E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMT67M8LCG Spice Model ---------- .SUBCKT DMT67M8LCG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 1.946E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.18E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.1 + TOX = 6E-008 NSUB = 1E+017 KP = 125 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 9.503E-010 VJ = 0.8 M = 0.6289 .MODEL DSUB D IS = 3.653E-010 N = 1.179 RS = 0.0005063 BV = 64.99 + CJO = 1.713E-009 VJ = 0.9 M = 0.3008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/08/02 *---------- DMT67M8LCGQ Spice Model ---------- .SUBCKT DMT67M8LCGQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 1.946E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.18E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.1 + TOX = 6E-008 NSUB = 1E+017 KP = 125 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 9.503E-010 VJ = 0.8 M = 0.6289 .MODEL DSUB D IS = 3.653E-010 N = 1.179 RS = 0.0005063 BV = 64.99 + CJO = 1.713E-009 VJ = 0.9 M = 0.3008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/08/02 *---------- DMT67M8LK3 Spice Model ---------- .SUBCKT DMT67M8LK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0033 RS 30 3 0.0001 RG 20 2 0.59 CGS 2 3 2.01E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.36E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.378 + TOX = 1E-007 NSUB = 1E+015 KP = 112 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9E-010 VJ = 0.8 M = 0.8545 .MODEL DSUB D IS = 8E-009 N = 1.644 RS = 0.0002556 BV = 63.9 + CJO = 1.5E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.345E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/7 *---------- DMT67M8LPSW Spice Model ---------- .SUBCKT DMT67M8LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001153 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 1.969E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.093 + TOX = 6E-008 NSUB = 1E+016 KP = 88.4 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 1.263E-009 VJ = 0.7904 M = 0.8 .MODEL DSUB D IS = 2.181E-010 N = 1.149 RS = 0.001361 BV = 65.26 CJO = 4.764E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT67M8LPSW Spice Model v1.0W Last Revised 2019/06/12 *---------- DMT67M8LSS Spice Model ---------- .SUBCKT DMT67M8LSS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0028 RS 30 3 0.0001 RG 20 2 0.59 CGS 2 3 1.9E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.1 + TOX = 1E-007 NSUB = 1E+014 KP = 110 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.8E-009 VJ = 0.8 M = 0.82 .MODEL DSUB D IS = 9E-009 N = 1.5 RS = 4.41E-010 BV = 63.36 + CJO = 2.5E-009 VJ = 0.9 M = 0.4 XTI = 0 TT = 1.345E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/05/13 *---------- DMT68M8LFV Spice Model ---------- .SUBCKT DMT68M8LFV D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0023 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 2.052E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.103 + TOX = 6E-008 NSUB = 1E+016 KP = 75 U0 = 677.6 KAPPA = 10 .MODEL DCGD D CJO = 4.877E-010 VJ = 0.8 M = 0.766 .MODEL DSUB D IS = 7.492E-011 N = 1.122 RS = 0.002669 BV = 67.52 CJO = 3.791E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT68M8LFV Spice Model v1.0W Last Revised 2018/12/5 *---------- DMT68M8LFV Spice Model ---------- .SUBCKT DMT68M8LFV D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0023 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 2.052E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.103 + TOX = 6E-008 NSUB = 1E+016 KP = 75 U0 = 677.6 KAPPA = 10 .MODEL DCGD D CJO = 4.877E-010 VJ = 0.8 M = 0.766 .MODEL DSUB D IS = 7.492E-011 N = 1.122 RS = 0.002669 BV = 67.52 CJO = 3.791E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT68M8LFV Spice Model v1.0W Last Revised 2018/12/5 *---------- DMT68M8LPS Spice Model ---------- .SUBCKT DMT68M8LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002896 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 1.83E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.909 + TOX = 6E-008 NSUB = 1E+016 KP = 82 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.927E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.697E-010 N = 1.179 RS = 0.0009315 BV = 65 + CJO = 1.2E-009 VJ = 0.8 M = 0.6 TT = 1.625E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT68M8LPS Spice Model v1.0 Last Revised 2018/09/27 *---------- DMT68M8LSS Spice Model ---------- .SUBCKT DMT68M8LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004537 RS 30 3 0.001 RG 20 2 1.68 CGS 2 3 2.094E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.933 + TOX = 6E-008 NSUB = 1E+016 KP = 122.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.5E-010 VJ = 0.8 M = 0.7951 .MODEL DSUB D IS = 1.193E-010 N = 1.123 RS = 0.004612 BV = 67 CJO = 1.2E-009 VJ = 0.8 M = 0.6 TT=9.6E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT68M8LSS Spice Model v1.0 Last Revised 2017/5/8 *---------- DMT69M5LCG Spice Model ---------- .SUBCKT DMT69M5LCG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0049 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 1.32E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.3 + TOX = 1E-007 NSUB = 1E+015 KP = 120 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.203E-010 VJ = 0.8 M = 0.8161 .MODEL DSUB D IS = 4.2E-009 N = 1.404 RS = 0.001268 BV = 65.3 + CJO = 1.1E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.353E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/07/16 *---------- DMT69M5LFVW Spice Model ---------- .SUBCKT DMT69M5LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 1.387E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.3 + TOX = 1E-007 NSUB = 1E+015 KP = 70 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.2E-010 VJ = 0.8 M = 0.8551 .MODEL DSUB D IS = 6.626E-012 N = 1.04 RS = 0.004756 BV = 65.4 + CJO = 1.15E-009 VJ = 0.9 M = 0.3 TT = 1.335E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/12 *---------- DMT69M5LFVWQ Spice Model ---------- .SUBCKT DMT69M5LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 1.387E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.3 + TOX = 1E-007 NSUB = 1E+015 KP = 70 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.2E-010 VJ = 0.8 M = 0.8551 .MODEL DSUB D IS = 6.626E-012 N = 1.04 RS = 0.004756 BV = 65.4 + CJO = 1.15E-009 VJ = 0.9 M = 0.3 TT = 1.335E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/12/12 *---------- DMT69M5LH3 Spice Model ---------- .SUBCKT DMT69M5LH3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0049 RS 30 3 0.0001 RG 20 2 1.85 CGS 2 3 1.32E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.3 + TOX = 1E-007 NSUB = 1E+015 KP = 120 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.203E-010 VJ = 0.8 M = 0.8161 .MODEL DSUB D IS = 4.2E-009 N = 1.404 RS = 0.001268 BV = 65.3 + CJO = 1.1E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.353E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/07/16 *---------- DMT69M8LFV Spice Model ---------- .SUBCKT DMT69M8LFV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT69M8LFV Spice Model v1.0M Last Revised 2016/11/21 *---------- DMT69M8LPS Spice Model ---------- .SUBCKT DMT69M8LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT69M8LPS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT69M8LSS Spice Model ---------- .SUBCKT DMT69M8LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT69M8LSS Spice Model v1.0 Last Revised 2015/10/22 *---------- DMT69M9LPDW Spice Model ---------- .SUBCKT DMT69M9LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0075 RS 30 3 0.0001 RG 20 2 1.71 CGS 2 3 2.194E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.8 + TOX = 1E-007 NSUB = 1E+015 KP = 72 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.814E-010 VJ = 0.8 M = 0.6836 .MODEL DSUB D IS = 1.9E-009 N = 1.31 RS = 0.007252 BV = 63.6 + CJO = 1.07E-009 VJ = 0.9 M = 0.3029 XTI = 0 TT = 9.1E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/03/24 *---------- DMT8003SPSW Spice Model ---------- .SUBCKT DMT8003SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001612 RS 30 3 0.0001 RG 20 2 0.82 CGS 2 3 9.029E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.19E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.794 TOX = 1E-007 + NSUB = 6.338E+015 KP = 219 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.125E-009 VJ = 0.6991 M = 0.9 .MODEL DSUB D IS = 4.299E-009 N = 1.354 RS = 0.0005152 BV = 85.9 + CJO = 2.787E-009 VJ = 0.6 M = 0.4182 XTI = 0 TT = 2.901E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT8003SPSWQ Spice Model ---------- .SUBCKT DMT8003SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001612 RS 30 3 0.0001 RG 20 2 0.82 CGS 2 3 9.029E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.19E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.794 TOX = 1E-007 + NSUB = 6.338E+015 KP = 219 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.125E-009 VJ = 0.6991 M = 0.9 .MODEL DSUB D IS = 4.299E-009 N = 1.354 RS = 0.0005152 BV = 85.9 + CJO = 2.787E-009 VJ = 0.6 M = 0.4182 XTI = 0 TT = 2.901E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT8007LPSW Spice Model ---------- .SUBCKT DMT8007LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0034 RS 30 3 0.0001 RG 20 2 1.6 CGS 2 3 2.71E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.43 + TOX = 1E-007 + NSUB = 1E+015 KP = 125 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.1E-010 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 4E-009 N = 1.39 RS = 0.0009 BV = 88.8 + CJO = 1.6E-009 VJ = 0.9 M = 0.38 XTI = 0 TT = 2.067E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8007LPSW Spice Model v1.1 Last Revised 2022/12/05 *---------- DMT8008LFG Spice Model ---------- .SUBCKT DMT8008LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0024 RS 30 3 0.001 RG 20 2 1.98 CGS 2 3 1.953E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.583E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.24E+005 ETA = 0.001 VTO = 1.978 + TOX = 6E-008 NSUB = 1E+016 KP = 383.58 U0 = 400 KAPPA = 12 .MODEL DCGD D CJO = 4.55E-010 VJ = 0.74 M = 0.78 .MODEL DSUB D IS = 2.47E-010 N = 1.17 RS = 0.00173 BV = 96 CJO = 7.42E-009 VJ = 0.8 M = 0.689 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8008LFG Spice Model v1.0M Last Revised 2019/9/18 *---------- DMT8008LK3 Spice Model ---------- .SUBCKT DMT8008LK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0039 RS 30 3 0.0001 RG 20 2 1.7 CGS 2 3 2.31E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.4 + TOX = 1E-007 + NSUB = 1E+015 KP = 85 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.1E-010 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 9.5E-009 N = 1.427 RS = 0.002211 BV = 87 + CJO = 1.6E-009 VJ = 0.9 M = 0.38 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8008LK3 Spice Model v1.1 Last Revised 2021/09/10 *---------- DMT8008LPS Spice Model ---------- .SUBCKT DMT8008LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0024 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.032E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.152E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.24E+005 ETA = 0.001 VTO = 1.685 + TOX = 6E-008 NSUB = 1E+016 KP = 339.09 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.57E-010 VJ = 0.7407 M = 0.8 .MODEL DSUB D IS = 2.328E-010 N = 1.165 RS = 0.001885 BV = 95 CJO = 8.38E-009 VJ = 0.8 M = 0.6922 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8008LPS Spice Model v1.0M Last Revised 2019/1/9 *---------- DMT8008LSS Spice Model ---------- .SUBCKT DMT8008LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0017 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.831E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.307E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.24E+005 ETA = 0.001 VTO = 1.529 + TOX = 6E-008 NSUB = 1E+016 KP = 340.25 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.27E-010 VJ = 0.7633 M = 0.8 .MODEL DSUB D IS = 2.328E-010 N = 1.162 RS = 0.000929 BV = 94.6 CJO = 7.2E-009 VJ = 0.8 M = 0.7101 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8008LSS Spice Model v1.0M Last Revised 2019/3/25 *---------- DMT8008SCT Spice Model ---------- .SUBCKT DMT8008SCT 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00352 RS 30 3 0.0001 RG 20 2 1.72 CGS 2 3 1.91E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.222E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.345 + TOX = 1E-007 + NSUB = 1E+015 KP = 67 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.7E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 6.5E-009 N = 1.434 RS = 0.00115 BV = 95.3 + CJO = 1.6E-009 VJ = 0.9 M = 0.38 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8008SCT Spice Model v1.1 Last Revised 2020/11/25 *---------- DMT8008SK3 Spice Model ---------- .SUBCKT DMT8008SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002978 RS 30 3 0.0001 RG 20 2 1.72 CGS 2 3 1.91E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.222E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.45 + TOX = 1E-007 + NSUB = 1E+015 KP = 65 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.7E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 9E-009 N = 1.45 RS = 0.001525 BV = 95.1 + CJO = 1.6E-009 VJ = 0.9 M = 0.38 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8008SK3 Spice Model v1.1 Last Revised 2021/09/13 *---------- DMT8008SPS Spice Model ---------- .SUBCKT DMT8008SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00326 RS 30 3 0.001 RG 20 2 1.72 CGS 2 3 1.86E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO =2.45 + TOX = 6E-008 NSUB = 1E+016 KP = 473.9 U0 = 400 KAPPA = 8.3 .MODEL DCGD D CJO = 0.733E-009 VJ = 0.8 M = 0.707 .MODEL DSUB D IS = 2.45E-010 N = 1.069 RS = 4.61E-010 BV = 94.6 CJO = 1.805E-009 VJ = 0.769 M = 0.59 TT = 4.9E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8008SPS Spice Model v1.0 Last Revised 2019/2/11 *---------- DMT8012LFG Spice Model ---------- .SUBCKT DMT8012LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008517 RS 30 3 0.001 RG 20 2 0.44 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 + TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 .MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8012LFG Spice Model v1.0M Last Revised 2018/2/1 *---------- DMT8012LK3 Spice Model ---------- .SUBCKT DMT8012LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008517 RS 30 3 0.001 RG 20 2 0.44 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 + TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 .MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8012LK3 Spice Model v1.0M Last Revised 2018/2/1 *---------- DMT8012LPS Spice Model ---------- .SUBCKT DMT8012LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008517 RS 30 3 0.001 RG 20 2 0.44 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 + TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 .MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8012LPS Spice Model v1.0M Last Revised 2018/2/1 *---------- DMT8012LSS Spice Model ---------- .SUBCKT DMT8012LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008517 RS 30 3 0.001 RG 20 2 0.44 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 + TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 .MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8012LSS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMT8020LDG Spice Model ---------- *Q1 .SUBCKT DMT8020LDG_Q1 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01016 RS 30 3 0.0001 RG 20 2 0.33 CGS 2 3 8.732E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.87E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.595 + TOX = 1E-007 NSUB = 1E+016 KP = 53.75 U0 = 480.6 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.055E-010 VJ = 1.932 M = 0.8942 .MODEL DSUB D IS = 5.547E-009 N = 1.376 RS = 0.003207 BV = 83.7 + CJO = 6.194E-010 VJ = 2 M = 0.242 XTI = 0 TT = 1.968E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Q2 .SUBCKT DMT8020LDG_Q2 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01022 RS 30 3 0.0001 RG 20 2 0.4 CGS 2 3 8.563E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.675E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.491 + TOX = 1E-007 NSUB = 1E+016 KP = 50.33 U0 = 490.9 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.621E-010 VJ = 1.607 M = 0.9 .MODEL DSUB D IS = 7.3E-009 N = 1.386 RS = 0.003503 BV = 83.4 + CJO = 6.214E-010 VJ = 2 M = 0.2429 XTI = 0 TT = 1.703E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMT8030LFDF Spice Model ---------- .SUBCKT DMT8030LFDF 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0148 RS 30 3 0.0001 RG 20 2 1.28 CGS 2 3 5.886E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.85E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.454 + TOX = 1E-007 NSUB = 1E+015 KP = 35 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.073E-010 VJ = 0.8 M = 0.5704 .MODEL DSUB D IS = 4.95E-009 N = 1.497 RS = 0.005242 BV = 92.6 + CJO = 3.935E-010 VJ = 0.9 M = 0.3 TT = 1.118E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/01/16 *---------- DMTH10H003SPSW Spice Model ---------- .SUBCKT DMTH10H003SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00035 RS 30 3 0.0001 RG 20 2 1.46 CGS 2 3 5.5E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.32E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.612 + TOX = 1E-007 + NSUB = 1E+015 KP = 95 U0 = 420 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.7E-009 VJ = 0.6508 M = 0.9 .MODEL DSUB D IS = 6E-009 N = 1.29 RS = 0.0007 BV = 107.6 + CJO = 3.8E-009 VJ = 0.9 M = 0.394 XTI = 0 TT = 3.587E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H003SPSW Spice Model v1.1 Last Revised 2020/07/22 *---------- DMTH10H005LCT Spice Model ---------- .SUBCKT DMTH10H005LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001629 RS 30 3 0.001 RG 20 2 0.75 CGS 2 3 4.821E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.467 + TOX = 6E-008 NSUB = 1E+016 KP = 92.66 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.93E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.249E-010 N = 1.121 RS = 0.003 BV = 108 CJO = 4E-009 VJ = 0.8 M = 0.6 TT = 3.3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H005LCT Spice Model v1.0M Last Revised 2016/11/18 *---------- DMTH10H009LFG Spice Model ---------- .SUBCKT DMTH10H009LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0021 RS 30 3 1E-006 RG 20 2 1.28 CGS 2 3 3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.87E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.78 + TOX = 6E-008 NSUB = 1E+016 KP = 175.2 U0 = 400 KAPPA = 4.92E-010 .MODEL DCGD D CJO = 8.04E-010 VJ = 1 M = 0.52 .MODEL DSUB D IS = 2.28E-010 N = 1.185 RS = 0.0026 BV = 107.7 CJO = 2.185E-009 VJ = 1 M = 0.154 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H009LFG Spice Model v1.0 Last Revised 2019/6/20 *---------- DMTH10H009LFGQ Spice Model ---------- .SUBCKT DMTH10H009LFGQ D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0021 RS 30 3 1E-006 RG 20 2 1.28 CGS 2 3 3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 0.87E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.78 + TOX = 6E-008 NSUB = 1E+016 KP = 175.2 U0 = 400 KAPPA = 4.92E-010 IS = 0 .MODEL DCGD D CJO = 8.04E-010 VJ = 1 M = 0.52 .MODEL DSUB D IS = 2.28E-010 N = 1.185 RS = 0.0026 BV = 107.7 + CJO = 2.185E-009 VJ = 1 M = 0.154 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/21 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H009LPS Spice Model ---------- .SUBCKT DMTH10H009LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 1E-006 RG 20 2 1.98 CGS 2 3 8.803E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.14E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.31 + TOX = 6E-008 NSUB = 1E+016 KP = 228 U0 = 400 KAPPA = 5.856E-010 .MODEL DCGD D CJO = 9.403E-010 VJ = 1 M = 0.875 .MODEL DSUB D IS = 2.588E-010 N = 1.08 RS = 0.0019 BV = 105 CJO = 1.77E-009 VJ = 1 M = 0.211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H009LPS Spice Model v1.0 Last Revised 2019/1/9 *---------- DMTH10H009LPSQ Spice Model ---------- .SUBCKT DMTH10H009LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 1E-006 RG 20 2 1.98 CGS 2 3 8.803E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.14E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.31 + TOX = 6E-008 NSUB = 1E+016 KP = 228 U0 = 400 KAPPA = 5.856E-010 .MODEL DCGD D CJO = 9.403E-010 VJ = 1 M = 0.875 .MODEL DSUB D IS = 2.588E-010 N = 1.08 RS = 0.0019 BV = 105 CJO = 1.77E-009 VJ = 1 M = 0.211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H009LPSQ Spice Model v1.0 Last Revised 2019/1/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H009LPSW Spice Model ---------- .SUBCKT DMTH10H009LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 1E-006 RG 20 2 1.98 CGS 2 3 8.803E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.14E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.31 + TOX = 6E-008 NSUB = 1E+016 KP = 228 U0 = 400 KAPPA = 5.856E-010 .MODEL DCGD D CJO = 9.403E-010 VJ = 1 M = 0.875 .MODEL DSUB D IS = 2.588E-010 N = 1.08 RS = 0.0019 BV = 105 CJO = 1.77E-009 VJ = 1 M = 0.211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H009LPSW Spice Model v1.0 Last Revised 2024/11/20 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H009LPSWQ Spice Model ---------- .SUBCKT DMTH10H009LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 1E-006 RG 20 2 1.98 CGS 2 3 8.803E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.14E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.31 + TOX = 6E-008 NSUB = 1E+016 KP = 228 U0 = 400 KAPPA = 5.856E-010 .MODEL DCGD D CJO = 9.403E-010 VJ = 1 M = 0.875 .MODEL DSUB D IS = 2.588E-010 N = 1.08 RS = 0.0019 BV = 105 CJO = 1.77E-009 VJ = 1 M = 0.211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H009LPSWQ Spice Model v1.0 Last Revised 2024/11/20 *---------- DMTH10H009SPS Spice Model ---------- .SUBCKT DMTH10H009SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 1E-006 RG 20 2 1.72 CGS 2 3 8.52E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.96 + TOX = 6E-008 NSUB = 1E+016 KP = 153 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 8.32E-010 VJ = 1 M = 0.665 .MODEL DSUB D IS = 2.253E-010 N = 1.102 RS = 0.0019 BV = 109 CJO = 1.306E-009 VJ = 1 M = 0.209 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H009SPS Spice Model v1.0 Last Revised 2019/1/4 *---------- DMTH10H009SPSQ Spice Model ---------- .SUBCKT DMTH10H009SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 1E-006 RG 20 2 1.72 CGS 2 3 8.52E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.96 + TOX = 6E-008 NSUB = 1E+016 KP = 153 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 8.32E-010 VJ = 1 M = 0.665 .MODEL DSUB D IS = 2.253E-010 N = 1.102 RS = 0.0019 BV = 109 CJO = 1.306E-009 VJ = 1 M = 0.209 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H009SPSQ Spice Model v1.0 Last Revised 2019/1/4 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H009SPSW Spice Model ---------- .SUBCKT DMTH10H009SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 1E-006 RG 20 2 1.72 CGS 2 3 8.52E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.96 + TOX = 6E-008 NSUB = 1E+016 KP = 153 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 8.32E-010 VJ = 1 M = 0.665 .MODEL DSUB D IS = 2.253E-010 N = 1.102 RS = 0.0019 BV = 109 CJO = 1.306E-009 VJ = 1 M = 0.209 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H009SPSW Spice Model v1.0 Last Revised 2024/11/20 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H009SPSWQ Spice Model ---------- .SUBCKT DMTH10H009SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 1E-006 RG 20 2 1.72 CGS 2 3 8.52E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.96 + TOX = 6E-008 NSUB = 1E+016 KP = 153 U0 = 400 KAPPA = 4.461E-010 .MODEL DCGD D CJO = 8.32E-010 VJ = 1 M = 0.665 .MODEL DSUB D IS = 2.253E-010 N = 1.102 RS = 0.0019 BV = 109 CJO = 1.306E-009 VJ = 1 M = 0.209 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H009SPSWQ Spice Model v1.0 Last Revised 2024/11/20 *---------- DMTH10H010LCT Spice Model ---------- .SUBCKT DMTH10H010LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003569 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.092E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 53.29 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.273E-010 N = 1.184 RS = 0.0002213 BV = 103 CJO = 2E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010LCT Spice Model v1.0M Last Revised 2016/3/16 *---------- DMTH10H010LCTB Spice Model ---------- .SUBCKT DMTH10H010LCTB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010LCTB Spice Model v1.0 Last Revised 2018/6/20 *---------- DMTH10H010LPS Spice Model ---------- .SUBCKT DMTH10H010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010LPS Spice Model v1.0 Last Revised 2017/12/6 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H010LPSW Spice Model ---------- .SUBCKT DMTH10H010LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010LPSW Spice Model v1.0 Last Revised 2024/11/20 *---------- DMTH10H010SCT Spice Model ---------- .SUBCKT DMTH10H010SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010SCT Spice Model v1.0 Last Revised 2018/1/3 *---------- DMTH10H010SPS Spice Model ---------- .SUBCKT DMTH10H010SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010SPS Spice Model v1.0 Last Revised 2017/12/6 *---------- DMTH10H010SPSQ Spice Model ---------- .SUBCKT DMTH10H010SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010SPSQ Spice Model v1.0 Last Revised 2018/2/8 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H010SPSW Spice Model ---------- .SUBCKT DMTH10H010SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010SPSW Spice Model v1.0 Last Revised 2024/11/20 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H010SPSWQ Spice Model ---------- .SUBCKT DMTH10H010SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00344 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 3.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 + TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H010SPSWQ Spice Model v1.0 Last Revised 2023/7/27 *---------- DMTH10H015LK3 Spice Model ---------- .SUBCKT DMTH10H015LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015LK3 Spice Model v1.0M Last Revised 2016/6/13 *---------- DMTH10H015LPS Spice Model ---------- .SUBCKT DMTH10H015LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015LPS Spice Model v1.0M Last Revised 2016/6/13 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H015LPSW Spice Model ---------- .SUBCKT DMTH10H015LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015LPSW Spice Model v1.0M Last Revised 2024/11/20 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H015LPSWQ Spice Model ---------- .SUBCKT DMTH10H015LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015LPSWQ Spice Model v1.0M Last Revised 2023/7/27 *---------- DMTH10H015SK3 Spice Model ---------- .SUBCKT DMTH10H015SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.0001 RG 20 2 0.69 CGS 2 3 2.32E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.35E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0 VTO = 3.35 + TOX = 6.05E-008 + NSUB = 1E+015 KP = 40 U0 = 400 KAPPA = 4.441E-010 IS = 0 .MODEL DCGD D CJO = 2E-010 VJ = 0.5 M = 0.6 .MODEL DSUB D IS = 2.2E-009 N = 1.405 RS = 0.001934 BV = 105 + CJO = 1.194E-009 VJ = 0.9 M = 0.3334 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015SK3 Spice Model v1.1 Last Revised 2021/05/25 *---------- DMTH10H015SK3Q Spice Model ---------- .SUBCKT DMTH10H015SK3Q 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0065 RS 30 3 0.0001 RG 20 2 0.69 CGS 2 3 2.32E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.35E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0 VTO = 3.35 + TOX = 6.05E-008 + NSUB = 1E+015 KP = 40 U0 = 400 KAPPA = 4.441E-010 IS = 0 .MODEL DCGD D CJO = 2E-010 VJ = 0.5 M = 0.6 .MODEL DSUB D IS = 2.2E-009 N = 1.405 RS = 0.001934 BV = 105 + CJO = 1.194E-009 VJ = 0.9 M = 0.3334 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015SK3Q Spice Model v1.1 Last Revised 2021/05/25 *---------- DMTH10H015SPS Spice Model ---------- .SUBCKT DMTH10H015SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00671 RS 30 3 0.001 RG 20 2 1.69 CGS 2 3 2.324E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.2 TOX = 6E-008 + NSUB = 1E+016 KP = 52.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.879E-010 VJ = 0.8 M = 0.7727 .MODEL DSUB D IS = 9.79E-009 N = 1.419 RS = 0.00067 BV = 105.6 CJO = 1.62E-009 VJ = 0.8 M = 0.6 TT = 2.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015SPS Spice Model v1.0 Last Revised 2018/03/20 *---------- DMTH10H015SPSQ Spice Model ---------- .SUBCKT DMTH10H015SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00671 RS 30 3 0.001 RG 20 2 1.69 CGS 2 3 2.324E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.2 TOX = 6E-008 + NSUB = 1E+016 KP = 52.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.879E-010 VJ = 0.8 M = 0.7727 .MODEL DSUB D IS = 9.79E-009 N = 1.419 RS = 0.00067 BV = 105.6 CJO = 1.62E-009 VJ = 0.8 M = 0.6 TT = 2.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015SPSQ Spice Model v1.0 Last Revised 2018/03/20 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H015SPSW Spice Model ---------- .SUBCKT DMTH10H015SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00671 RS 30 3 0.001 RG 20 2 1.69 CGS 2 3 2.324E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.2 TOX = 6E-008 + NSUB = 1E+016 KP = 52.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.879E-010 VJ = 0.8 M = 0.7727 .MODEL DSUB D IS = 9.79E-009 N = 1.419 RS = 0.00067 BV = 105.6 CJO = 1.62E-009 VJ = 0.8 M = 0.6 TT = 2.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015SPSW Spice Model v1.0 Last Revised 2024/08/23 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H015SPSWQ Spice Model ---------- .SUBCKT DMTH10H015SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00671 RS 30 3 0.001 RG 20 2 1.69 CGS 2 3 2.324E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.2 TOX = 6E-008 + NSUB = 1E+016 KP = 52.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.879E-010 VJ = 0.8 M = 0.7727 .MODEL DSUB D IS = 9.79E-009 N = 1.419 RS = 0.00067 BV = 105.6 CJO = 1.62E-009 VJ = 0.8 M = 0.6 TT = 2.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H015SPSWQ Spice Model v1.0 Last Revised 2023/07/27 *---------- DMTH10H017LPD Spice Model ---------- .SUBCKT DMTH10H017LPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00725 RS 30 3 0.001 RG 20 2 1.17 CGS 2 3 1.86E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.52E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 TOX = 6E-008 + NSUB = 1E+016 KP = 46.5 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.118E-010 VJ = 0.8 M = 0.769 .MODEL DSUB D IS = 7.5E-009 N = 1.42 RS = 0.00067 BV = 106.1 CJO = 1.23E-009 VJ = 0.8 M = 0.6 TT = 1.74E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H017LPD Spice Model v1.0 Last Revised 2018/03/27 *---------- DMTH10H025LK3 Spice Model ---------- .SUBCKT DMTH10H025LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00752 RS 30 3 0.001 RG 20 2 6.22 CGS 2 3 1.533E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 + TOX = 6E-008 NSUB = 1E+016 KP = 14.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.499E-010 VJ = 0.8 M = 0.6956 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 110 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H025LK3 Spice Model v1.0 Last Revised 2018/5/21 *---------- DMTH10H025LPDW Spice Model ---------- .SUBCKT DMTH10H025LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01179 RS 30 3 0.0001 RG 20 2 0.97 CGS 2 3 1.447E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.15E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.01 + TOX = 1E-007 NSUB = 1E+014 KP = 42.2 U0 = 355 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.936E-010 VJ = 0.8 M = 0.6645 .MODEL DSUB D IS = 9.789E-009 N = 1.52 RS = 0.003346 BV = 103.6 + CJO = 6.097E-010 VJ = 0.9 M = 0.2316 XTI = 0 TT = 2.112E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/04/01 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H025LPDWQ Spice Model ---------- .SUBCKT DMTH10H025LPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01179 RS 30 3 0.0001 RG 20 2 0.97 CGS 2 3 1.447E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.15E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.01 + TOX = 1E-007 NSUB = 1E+014 KP = 42.2 U0 = 355 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.936E-010 VJ = 0.8 M = 0.6645 .MODEL DSUB D IS = 9.789E-009 N = 1.52 RS = 0.003346 BV = 103.6 + CJO = 6.097E-010 VJ = 0.9 M = 0.2316 XTI = 0 TT = 2.112E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/04/01 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H025LPS Spice Model ---------- .SUBCKT DMTH10H025LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00752 RS 30 3 0.001 RG 20 2 1.3 CGS 2 3 1.41E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 + TOX = 6E-008 NSUB = 1E+016 KP = 14.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.42E-010 VJ = 0.8 M = 0.6956 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 105.2 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H025LPS Spice Model v1.0 Last Revised 2019/4/15 *---------- DMTH10H025LPSQ Spice Model ---------- .SUBCKT DMTH10H025LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00752 RS 30 3 0.001 RG 20 2 1.3 CGS 2 3 1.41E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 + TOX = 6E-008 NSUB = 1E+016 KP = 14.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.42E-010 VJ = 0.8 M = 0.6956 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 105.2 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H025LPSQ Spice Model v1.0 Last Revised 2019/4/15 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H025LPSW Spice Model ---------- .SUBCKT DMTH10H025LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00752 RS 30 3 0.001 RG 20 2 1.3 CGS 2 3 1.41E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 + TOX = 6E-008 NSUB = 1E+016 KP = 14.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.42E-010 VJ = 0.8 M = 0.6956 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 105.2 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H025LPSW Spice Model v1.0 Last Revised 2024/11/20 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H025LPSWQ Spice Model ---------- .SUBCKT DMTH10H025LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00752 RS 30 3 0.001 RG 20 2 1.3 CGS 2 3 1.41E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 + TOX = 6E-008 NSUB = 1E+016 KP = 14.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.42E-010 VJ = 0.8 M = 0.6956 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 105.2 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H025LPSWQ Spice Model v1.0 Last Revised 2023/7/27 *---------- DMTH10H025SK3 Spice Model ---------- .SUBCKT DMTH10H025SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00799 RS 30 3 0.001 RG 20 2 6.22 CGS 2 3 1.533E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.941 + TOX = 6E-008 NSUB = 1E+016 KP = 23.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.591E-010 VJ = 0.8 M = 0.7054 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 109 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H025SK3 Spice Model v1.0 Last Revised 2018/2/14 *---------- DMTH10H025SK3 Spice Model ---------- .SUBCKT DMTH10H025SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00799 RS 30 3 0.001 RG 20 2 6.22 CGS 2 3 1.533E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.941 + TOX = 6E-008 NSUB = 1E+016 KP = 23.64 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.591E-010 VJ = 0.8 M = 0.7054 .MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 109 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 3.5E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H025SK3 Spice Model v1.0 Last Revised 2018/2/14 *---------- DMTH10H030LK3 Spice Model ---------- .SUBCKT DMTH10H030LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0122 RS 30 3 1E-008 RG 20 2 0.75 CGS 2 3 2.015E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 + TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 .MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H030LK3 Spice Model v1.0M Last Revised 2016/6/13 *---------- DMTH10H032LDVW Spice Model ---------- .SUBCKT DMTH10H032LDVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01944 RS 30 3 1E-006 RG 20 2 1.15 CGS 2 3 6.775E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.12E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.728 + TOX = 1E-007 NSUB = 1E+014 KP = 34.08 U0 = 999.7 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.234E-010 VJ = 0.9 M = 0.9 .MODEL DSUB D IS = 1.189E-008 N = 1.564 RS = 0.007358 BV = 104.3 + CJO = 3.799E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/27 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H032LDVWQ Spice Model ---------- .SUBCKT DMTH10H032LDVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01944 RS 30 3 1E-006 RG 20 2 1.15 CGS 2 3 6.775E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.12E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.728 + TOX = 1E-007 NSUB = 1E+014 KP = 34.08 U0 = 999.7 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.234E-010 VJ = 0.9 M = 0.9 .MODEL DSUB D IS = 1.189E-008 N = 1.564 RS = 0.007358 BV = 104.3 + CJO = 3.799E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/27 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H032LFVW Spice Model ---------- .SUBCKT DMTH10H032LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0177 RS 30 3 0.0001 RG 20 2 1.1 CGS 2 3 6.682E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.64 + TOX = 1E-007 + NSUB = 1E+015 KP = 37 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.349E-010 VJ = 0.8 M = 0.85 .MODEL DSUB D IS = 2.3E-009 N = 1.469 RS = 0.00384 BV = 105.2 + CJO = 4.5E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H032LFVW Spice Model v1.1 Last Revised 2022/03/10 *---------- DMTH10H032LFVWQ Spice Model ---------- .SUBCKT DMTH10H032LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0177 RS 30 3 0.0001 RG 20 2 1.1 CGS 2 3 6.682E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.64 + TOX = 1E-007 + NSUB = 1E+015 KP = 37 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.349E-010 VJ = 0.8 M = 0.85 .MODEL DSUB D IS = 2.3E-009 N = 1.469 RS = 0.00384 BV = 105.2 + CJO = 4.5E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H032LFVWQ Spice Model v1.1 Last Revised 2022/03/10 *---------- DMTH10H032LPDW Spice Model ---------- .SUBCKT DMTH10H032LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0215 RS 30 3 0.0001 RG 20 2 1.1 CGS 2 3 6.682E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.7 + TOX = 1E-007 + NSUB = 1E+015 KP = 35 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.349E-010 VJ = 0.8 M = 0.6826 .MODEL DSUB D IS = 9E-009 N = 1.54 RS = 0.007029 BV = 106.7 + CJO = 4.5E-010 VJ = 1.8 M = 0.3 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H032LPDW Spice Model v1.1 Last Revised 2021/11/12 *---------- DMTH10H032LPDWQ Spice Model ---------- .SUBCKT DMTH10H032LPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0215 RS 30 3 0.0001 RG 20 2 1.1 CGS 2 3 6.682E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.7 + TOX = 1E-007 + NSUB = 1E+015 KP = 35 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.349E-010 VJ = 0.8 M = 0.6826 .MODEL DSUB D IS = 9E-009 N = 1.54 RS = 0.007029 BV = 106.7 + CJO = 4.5E-010 VJ = 1.8 M = 0.3 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H032LPDWQ Spice Model v1.1 Last Revised 2021/11/12 *---------- DMTH10H032LPSW Spice Model ---------- .SUBCKT DMTH10H032LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0182 RS 30 3 0.0001 RG 20 2 1.1 CGS 2 3 6.682E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.7 + TOX = 1E-007 + NSUB = 1E+015 KP = 35 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.349E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 1.5E-008 N = 1.58 RS = 0.0045 BV = 105.1 + CJO = 4E-010 VJ = 1.8 M = 0.3 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H032LPSW Spice Model v1.1 Last Revised 2022/04/11 *---------- DMTH10H032LPSWQ Spice Model ---------- .SUBCKT DMTH10H032LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0182 RS 30 3 0.0001 RG 20 2 1.1 CGS 2 3 6.682E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.7 + TOX = 1E-007 + NSUB = 1E+015 KP = 35 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.349E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 1.5E-008 N = 1.58 RS = 0.0045 BV = 105.1 + CJO = 4E-010 VJ = 1.8 M = 0.3 TT = 1.575E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H032LPSWQ Spice Model v1.1 Last Revised 2022/04/11 *---------- DMTH10H032SDVW Spice Model ---------- .SUBCKT DMTH10H032SDVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02063 RS 30 3 1E-006 RG 20 2 1.19 CGS 2 3 5.315E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.55E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.927 + TOX = 1E-007 NSUB = 1E+014 KP = 24.5 U0 = 740.1 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.671E-010 VJ = 0.8 M = 0.5407 .MODEL DSUB D IS = 1.771E-009 N = 1.435 RS = 0.007555 BV = 106.1 + CJO = 3.948E-010 VJ = 3 M = 0.2097 XTI = 0 TT = 1.661E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/27 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H032SDVWQ Spice Model ---------- .SUBCKT DMTH10H032SDVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02063 RS 30 3 1E-006 RG 20 2 1.19 CGS 2 3 5.315E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.55E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.927 + TOX = 1E-007 NSUB = 1E+014 KP = 24.5 U0 = 740.1 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.671E-010 VJ = 0.8 M = 0.5407 .MODEL DSUB D IS = 1.771E-009 N = 1.435 RS = 0.007555 BV = 106.1 + CJO = 3.948E-010 VJ = 3 M = 0.2097 XTI = 0 TT = 1.661E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/27 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H032SPSW Spice Model ---------- .SUBCKT DMTH10H032SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0176 RS 30 3 0.0001 RG 20 2 1.19 CGS 2 3 5.24E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.18E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.73 + TOX = 1E-007 + NSUB = 1E+015 KP = 22 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.9E-010 VJ = 0.8 M = 0.6389 .MODEL DSUB D IS = 1.2E-008 N = 1.55 RS = 0.0055 BV = 106.5 + CJO = 5E-010 VJ = 0.8965 M = 0.3 XTI = 0 TT = 1.662E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H032SPSW Spice Model v1.1 Last Revised 2022/04/11 *---------- DMTH10H032SPSWQ Spice Model ---------- .SUBCKT DMTH10H032SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0176 RS 30 3 0.0001 RG 20 2 1.19 CGS 2 3 5.24E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.18E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.73 + TOX = 1E-007 + NSUB = 1E+015 KP = 22 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.9E-010 VJ = 0.8 M = 0.6389 .MODEL DSUB D IS = 1.2E-008 N = 1.55 RS = 0.0055 BV = 106.5 + CJO = 5E-010 VJ = 0.8965 M = 0.3 XTI = 0 TT = 1.662E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H032SPSWQ Spice Model v1.1 Last Revised 2022/04/11 *---------- DMTH10H038SPDW Spice Model ---------- .SUBCKT DMTH10H038SPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0167 RS 30 3 0.0001 RG 20 2 1.19 CGS 2 3 5.15E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.07E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.542 + TOX = 1E-007 + NSUB = 1E+015 KP = 18.48 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.15E-010 VJ = 0.8 M = 0.6389 .MODEL DSUB D IS = 3E-009 N = 1.471 RS = 0.008278 BV = 104.6 + CJO = 5E-010 VJ = 0.8965 M = 0.3 XTI = 0 TT = 1.662E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H038SPDW Spice Model v1.1 Last Revised 2021/11/12 *---------- DMTH10H038SPDWQ Spice Model ---------- .SUBCKT DMTH10H038SPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0167 RS 30 3 0.0001 RG 20 2 1.19 CGS 2 3 5.15E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.07E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.542 + TOX = 1E-007 + NSUB = 1E+015 KP = 18.48 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.15E-010 VJ = 0.8 M = 0.6389 .MODEL DSUB D IS = 3E-009 N = 1.471 RS = 0.008278 BV = 104.6 + CJO = 5E-010 VJ = 0.8965 M = 0.3 XTI = 0 TT = 1.662E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H038SPDWQ Spice Model v1.1 Last Revised 2021/11/12 *---------- DMTH10H071LFDFW Spice Model ---------- .SUBCKT DMTH10H071LFDFW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0457 RS 30 3 0.0001 RG 20 2 11.06 CGS 2 3 2.838E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.265E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.735 + TOX = 1E-007 NSUB = 1E+016 KP = 23.76 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.791E-011 VJ = 3 M = 0.7144 .MODEL DSUB D IS = 4.978E-009 N = 1.522 RS = 0.008427 BV = 120.1 + CJO = 3.309E-010 VJ = 2.694 M = 0.5207 XTI = 0 TT = 1.28E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/07/31 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H071LFDFWQ Spice Model ---------- .SUBCKT DMTH10H071LFDFWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0457 RS 30 3 0.0001 RG 20 2 11.06 CGS 2 3 2.838E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.265E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.735 + TOX = 1E-007 NSUB = 1E+016 KP = 23.76 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.791E-011 VJ = 3 M = 0.7144 .MODEL DSUB D IS = 4.978E-009 N = 1.522 RS = 0.008427 BV = 120.1 + CJO = 3.309E-010 VJ = 2.694 M = 0.5207 XTI = 0 TT = 1.28E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/07/31 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H072LPS Spice Model ---------- .SUBCKT DMTH10H072LPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.033 RS 30 3 0.0001 RG 20 2 7 CGS 2 3 2.62E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.88E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.8 + TOX = 1E-007 + NSUB = 1E+015 KP = 14.3 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.04E-010 VJ = 0.8 M = 0.775 .MODEL DSUB D IS = 5.7E-009 N = 1.513 RS = 0.006 BV = 115.9 + CJO = 3.75E-010 VJ = 0.9 M = 0.4 XTI = 0 TT = 1.873E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H072LPS Spice Model v1.1 Last Revised 2020/12/15 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH10H072LPSW Spice Model ---------- .SUBCKT DMTH10H072LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.033 RS 30 3 0.0001 RG 20 2 7 CGS 2 3 2.62E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.88E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.8 + TOX = 1E-007 + NSUB = 1E+015 KP = 14.3 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.04E-010 VJ = 0.8 M = 0.775 .MODEL DSUB D IS = 5.7E-009 N = 1.513 RS = 0.006 BV = 115.9 + CJO = 3.75E-010 VJ = 0.9 M = 0.4 XTI = 0 TT = 1.873E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H072LPSW Spice Model v1.0 Last Revised 2024/11/20 *---------- DMTH10H1M7STLW Spice Model ---------- .SUBCKT DMTH10H1M7STLW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.53 CGS 2 3 1.007E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.72E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.8 + TOX = 1E-007 NSUB = 1E+015 KP = 110 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2E-009 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 1E-008 N = 1.37 RS = 4E-010 BV = 106.8 + CJO = 7E-009 VJ = 0.6 M = 0.35 XTI = 0 TT = 4.535E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H1M7STLW Spice Model v1.1 Last Revised 2021/03/17 *---------- DMTH10H1M7STLWQ Spice Model ---------- .SUBCKT DMTH10H1M7STLWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.53 CGS 2 3 1.007E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.72E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.8 + TOX = 1E-007 NSUB = 1E+015 KP = 110 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2E-009 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 1E-008 N = 1.37 RS = 4E-010 BV = 106.8 + CJO = 7E-009 VJ = 0.6 M = 0.35 XTI = 0 TT = 4.535E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH10H1M7STLWQ Spice Model v1.1 Last Revised 2021/03/17 *---------- DMTH10H2M2LPSW Spice Model ---------- .SUBCKT DMTH10H2M2LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00141 RS 30 3 1E-006 RG 20 2 1.14 CGS 2 3 6.198E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.82E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.557 + TOX = 1E-007 NSUB = 1E+016 KP = 302.7 U0 = 287.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.35E-009 VJ = 0.8 M = 0.7418 .MODEL DSUB D IS = 7.5E-009 N = 1.373 RS = 0.0005941 BV = 102.5 + CJO = 3.92E-009 VJ = 0.9 M = 0.3123 XTI = 0 TT = 3.713E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/15 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H2M2LPSWQ Spice Model ---------- .SUBCKT DMTH10H2M2LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00141 RS 30 3 1E-006 RG 20 2 1.14 CGS 2 3 6.198E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.82E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.557 + TOX = 1E-007 NSUB = 1E+016 KP = 302.7 U0 = 287.5 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.35E-009 VJ = 0.8 M = 0.7418 .MODEL DSUB D IS = 7.5E-009 N = 1.373 RS = 0.0005941 BV = 102.5 + CJO = 3.92E-009 VJ = 0.9 M = 0.3123 XTI = 0 TT = 3.713E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/15 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH10H2M5STLW Spice Model ---------- .SUBCKT DMTH10H2M5STLW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.02 CGS 2 3 8.4E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.5 + TOX = 1E-007 NSUB = 1E+015 KP = 105 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.882E-009 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 1E-008 N = 1.359 RS = 0.0005094 BV = 105.5 + CJO = 6.1E-009 VJ = 0.9 M = 0.3355 XTI = 0 TT = 4.378E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/06/03 *---------- DMTH10H2M5STLWQ Spice Model ---------- .SUBCKT DMTH10H2M5STLWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.02 CGS 2 3 8.4E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.5 + TOX = 1E-007 NSUB = 1E+015 KP = 105 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.882E-009 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 1E-008 N = 1.359 RS = 0.0005094 BV = 105.5 + CJO = 6.1E-009 VJ = 0.9 M = 0.3355 XTI = 0 TT = 4.378E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/06/03 *---------- DMTH10H4M5LPSW Spice Model ---------- .SUBCKT DMTH10H4M5LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0009 RS 30 3 0.0003 RG 20 2 2.08 CGS 2 3 4.83E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.72E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.18 + TOX = 1E-007 + NSUB = 1E+015 KP = 57 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.3E-009 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 5.6E-009 N = 1.331 RS = 0.0012 BV = 106 + CJO = 3E-009 VJ = 0.9 M = 0.4 XTI = 0 TT = 3.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/08/01 *---------- DMTH10H4M5LPSWQ Spice Model ---------- .SUBCKT DMTH10H4M5LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0009 RS 30 3 0.0003 RG 20 2 2.08 CGS 2 3 4.83E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.72E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.18 + TOX = 1E-007 + NSUB = 1E+015 KP = 57 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.3E-009 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 5.6E-009 N = 1.331 RS = 0.0012 BV = 106 + CJO = 3E-009 VJ = 0.9 M = 0.4 XTI = 0 TT = 3.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/08/01 *---------- DMTH10H4M6SPS Spice Model ---------- .SUBCKT DMTH10H4M6SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0002 RS 30 3 0.0001 RG 20 2 2.05 CGS 2 3 4.25E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.387 + TOX = 1E-007 NSUB = 1E+015 KP = 55 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.151E-009 VJ = 0.8 M = 0.7 .MODEL DSUB D IS = 2.352E-011 N = 1.075 RS = 0.0006602 BV = 107.3 + CJO = 3.233E-009 VJ = 0.9 M = 0.3 TT = 3.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/10/29 *---------- DMTH10H4M6SPSW Spice Model ---------- .SUBCKT DMTH10H4M6SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00135 RS 30 3 0.0001 RG 20 2 2.05 CGS 2 3 4.3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.516 + TOX = 1E-007 + NSUB = 1E+015 KP = 67 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.174E-009 VJ = 0.7812 M = 0.9 .MODEL DSUB D IS = 6E-009 N = 1.403 RS = 4.441E-010 BV = 107.7 + CJO = 3E-009 VJ = 0.9 M = 0.3531 XTI = 0 TT = 3.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/08/01 *---------- DMTH10H4M6SPSWQ Spice Model ---------- .SUBCKT DMTH10H4M6SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00135 RS 30 3 0.0001 RG 20 2 2.05 CGS 2 3 4.3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.516 + TOX = 1E-007 + NSUB = 1E+015 KP = 67 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.174E-009 VJ = 0.7812 M = 0.9 .MODEL DSUB D IS = 6E-009 N = 1.403 RS = 4.441E-010 BV = 107.7 + CJO = 3E-009 VJ = 0.9 M = 0.3531 XTI = 0 TT = 3.154E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/08/01 *---------- DMTH12H007SK3 Spice Model ---------- .SUBCKT DMTH12H007SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.0001 RG 20 2 1.87 CGS 2 3 3.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.8 + TOX = 1E-007 + NSUB = 1E+015 KP = 55 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.3E-010 VJ = 0.799 M = 0.899 .MODEL DSUB D IS = 6E-009 N = 1.452 RS = 0.0007781 BV = 130.3 + CJO = 1.3E-009 VJ = 0.899 M = 0.301 XTI = 0 TT = 2.77E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *---------- DMTH12H007SPS Spice Model ---------- .SUBCKT DMTH12H007SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0035 RS 30 3 0.0001 RG 20 2 1.87 CGS 2 3 3.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.6 + TOX = 1E-007 NSUB = 1E+015 KP = 50 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.3E-010 VJ = 0.799 M = 0.899 .MODEL DSUB D IS = 1E-008 N = 1.451 RS = 4.441E-010 BV = 129.1 + CJO = 1.3E-009 VJ = 0.899 M = 0.301 XTI = 0 TT = 2.77E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/05/21 *---------- DMTH12H007SPSW Spice Model ---------- .SUBCKT DMTH12H007SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0035 RS 30 3 0.0001 RG 20 2 1.87 CGS 2 3 3.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.6 + TOX = 1E-007 NSUB = 1E+015 KP = 50 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.3E-010 VJ = 0.799 M = 0.899 .MODEL DSUB D IS = 1E-008 N = 1.451 RS = 4.441E-010 BV = 129.1 + CJO = 1.3E-009 VJ = 0.899 M = 0.301 XTI = 0 TT = 2.77E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH12H007SPSW Spice Model v1.1 Last Revised 2022/04/14 *---------- DMTH12H007SPSWQ Spice Model ---------- .SUBCKT DMTH12H007SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0035 RS 30 3 0.0001 RG 20 2 1.87 CGS 2 3 3.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.6 + TOX = 1E-007 NSUB = 1E+015 KP = 50 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.3E-010 VJ = 0.799 M = 0.899 .MODEL DSUB D IS = 1E-008 N = 1.451 RS = 4.441E-010 BV = 129.1 + CJO = 1.3E-009 VJ = 0.899 M = 0.301 XTI = 0 TT = 2.77E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH12H007SPSWQ Spice Model v1.1 Last Revised 2022/04/14 *---------- DMTH15H017LPSW Spice Model ---------- .SUBCKT DMTH15H017LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0075 RS 30 3 1E-006 RG 20 2 1.91 CGS 2 3 3.3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.6 + TOX = 1E-007 + NSUB = 1E+015 KP = 51 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.5E-010 VJ = 0.8 M = 0.8889 .MODEL DSUB D IS = 6.927E-011 N = 1.161 RS = 0.0009181 BV = 161 + CJO = 1.65E-009 VJ = 0.9 M = 0.5 TT = 3.597E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH15H017LPSW Spice Model v1.1 Last Revised 2022/11/14 *---------- DMTH15H017LPSWQ Spice Model ---------- .SUBCKT DMTH15H017LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0075 RS 30 3 1E-006 RG 20 2 1.91 CGS 2 3 3.3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.39E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.6 + TOX = 1E-007 + NSUB = 1E+015 KP = 51 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.5E-010 VJ = 0.8 M = 0.8889 .MODEL DSUB D IS = 6.927E-011 N = 1.161 RS = 0.0009181 BV = 161 + CJO = 1.65E-009 VJ = 0.9 M = 0.5 TT = 3.597E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH15H017LPSWQ Spice Model v1.1 Last Revised 2022/11/14 *---------- DMTH15H017SPS Spice Model ---------- .SUBCKT DMTH15H017SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0038 RS 30 3 0.0001 RG 20 2 2.06 CGS 2 3 2.517E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.73 + TOX = 1E-007 NSUB = 1E+015 KP = 25.35 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.85E-010 VJ = 0.8 M = 0.8993 .MODEL DSUB D IS = 1E-008 N = 1.451 RS = 4.441E-010 BV = 158.9 + CJO = 1.72E-009 VJ = 0.9 M = 0.46 XTI = 0 TT = 8.46E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/04/23 *---------- DMTH15H017SPSW Spice Model ---------- .SUBCKT DMTH15H017SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0038 RS 30 3 0.0001 RG 20 2 2.06 CGS 2 3 2.517E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.73 + TOX = 1E-007 NSUB = 1E+015 KP = 25.35 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.85E-010 VJ = 0.8 M = 0.8993 .MODEL DSUB D IS = 1E-008 N = 1.451 RS = 4.441E-010 BV = 158.9 + CJO = 1.72E-009 VJ = 0.9 M = 0.46 XTI = 0 TT = 8.46E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/21 *---------- DMTH15H017SPSWQ Spice Model ---------- .SUBCKT DMTH15H017SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0038 RS 30 3 0.0001 RG 20 2 2.06 CGS 2 3 2.517E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.73 + TOX = 1E-007 NSUB = 1E+015 KP = 25.35 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.85E-010 VJ = 0.8 M = 0.8993 .MODEL DSUB D IS = 1E-008 N = 1.451 RS = 4.441E-010 BV = 158.9 + CJO = 1.72E-009 VJ = 0.9 M = 0.46 XTI = 0 TT = 8.46E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/21 *---------- DMTH15H053SPSW Spice Model ---------- .SUBCKT DMTH15H053SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0342 RS 30 3 0.0001 RG 20 2 0.64 CGS 2 3 8.111E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.808 + TOX = 1E-007 NSUB = 1E+014 KP = 16.85 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.74E-010 VJ = 0.8 M = 0.7939 .MODEL DSUB D IS = 5.3E-009 N = 1.525 RS = 0.002469 BV = 161.5 + CJO = 5.902E-010 VJ = 0.9 M = 0.4368 XTI = 0 TT = 2.347E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/15 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH15H053SPSWQ Spice Model ---------- .SUBCKT DMTH15H053SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0342 RS 30 3 0.0001 RG 20 2 0.64 CGS 2 3 8.111E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 4.808 + TOX = 1E-007 NSUB = 1E+014 KP = 16.85 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.74E-010 VJ = 0.8 M = 0.7939 .MODEL DSUB D IS = 5.3E-009 N = 1.525 RS = 0.002469 BV = 161.5 + CJO = 5.902E-010 VJ = 0.9 M = 0.4368 XTI = 0 TT = 2.347E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/12/15 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH3002LK3 Spice Model ---------- .SUBCKT DMTH3002LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 4.937E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.99 + TOX = 6E-008 NSUB = 1E+016 KP = 268.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.244E-010 N = 1.155 RS = 0.0008535 BV = 30 CJO = 5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3002LK3 Spice Model v1.0M Last Revised 2016/2/4 *---------- DMTH3002LPS Spice Model ---------- .SUBCKT DMTH3002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 1.04 CGS 2 3 4.937E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.99 + TOX = 6E-008 NSUB = 1E+016 KP = 268.9 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.244E-010 N = 1.155 RS = 0.0008535 BV = 30 CJO = 5E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3002LPS Spice Model v1.0M Last Revised 2016/2/4 *---------- DMTH3004LFG Spice Model ---------- .SUBCKT DMTH3004LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001443 RS 30 3 0.001 RG 20 2 0.6 CGS 2 3 2.293E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 + TOX = 6E-008 NSUB = 1E+016 KP = 109.3 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.661E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.434E-009 N = 1.35 RS = 0.000788 BV = 38.07 + CJO = 1.7E-009 VJ = 0.8 M = 0.6 TT = 1.25E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LFG Spice Model v1.0J Last Revised 2018/07/28 *---------- DMTH3004LFGQ Spice Model ---------- .SUBCKT DMTH3004LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001443 RS 30 3 0.001 RG 20 2 0.6 CGS 2 3 2.293E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 + TOX = 6E-008 NSUB = 1E+016 KP = 109.3 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.661E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.434E-009 N = 1.35 RS = 0.000788 BV = 38.07 + CJO = 1.7E-009 VJ = 0.8 M = 0.6 TT = 1.25E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LFGQ Spice Model v1.0J Last Revised 2018/07/28 *---------- DMTH3004LK3 Spice Model ---------- .SUBCKT DMTH3004LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LK3 Spice Model v1.0 Last Revised 2015/11/10 *---------- DMTH3004LK3Q Spice Model ---------- .SUBCKT DMTH3004LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LK3Q Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH3004LPS Spice Model ---------- .SUBCKT DMTH3004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LPS Spice Model v1.0 Last Revised 2015/11/10 *---------- DMTH3004LPSQ Spice Model ---------- .SUBCKT DMTH3004LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.049E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 + TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 .MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH3004LPSQ Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH31M1LPSW Spice Model ---------- .SUBCKT DMTH31M1LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003313 RS 30 3 0.0001 RG 20 2 0.19 CGS 2 3 5.743E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.326 + TOX = 1E-007 NSUB = 6.249E+015 KP = 500 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.399E-009 VJ = 1.97 M = 0.9 .MODEL DSUB D IS = 1.126E-008 N = 1.338 RS = 4.441E-010 BV = 35.68 + CJO = 9.296E-009 VJ = 8 M = 0.6674 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH31M1LPSWQ Spice Model ---------- .SUBCKT DMTH31M1LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003313 RS 30 3 0.0001 RG 20 2 0.19 CGS 2 3 5.743E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.13E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.326 + TOX = 1E-007 NSUB = 6.249E+015 KP = 500 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.399E-009 VJ = 1.97 M = 0.9 .MODEL DSUB D IS = 1.126E-008 N = 1.338 RS = 4.441E-010 BV = 35.68 + CJO = 9.296E-009 VJ = 8 M = 0.6674 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/20 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH31M7LPSQ Spice Model ---------- .SUBCKT DMTH31M7LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0003678 RS 30 3 0.0001 RG 20 2 1.53 CGS 2 3 5.353E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.05 + TOX = 6E-008 NSUB = 1E+016 KP = 165 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.401E-009 VJ = 0.8 M = 0.6394 .MODEL DSUB D IS = 1.257E-009 N = 1.198 RS = 6.663E-005 BV = 32.63 + CJO = 4E-009 VJ = 0.8 M = 0.6 TT = 1.63E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH31M7LPSQ Spice Model v1.0J Last Revised 2018/10/04 *---------- DMTH32M5LPS Spice Model ---------- .SUBCKT DMTH32M5LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5.43E-006 RS 30 3 0.001 RG 20 2 0.71 CGS 2 3 3.753E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 1 VTO = 1.7 TOX = 6E-008 KP = 299.5 .MODEL DCGD D CJO = 1.805E-009 VJ = 0.8 M = 0.6038 .MODEL DSUB D IS = 2.221E-010 N = 1.18 RS = 4.441E-010 BV = 38 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH32M5LPS Spice Model v1.0 Last Revised 2016/12/31 *---------- DMTH32M5LPSQ Spice Model ---------- .SUBCKT DMTH32M5LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5.43E-006 RS 30 3 0.001 RG 20 2 0.71 CGS 2 3 3.753E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.15E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 1 VTO = 1.7 TOX = 6E-008 KP = 299.5 .MODEL DCGD D CJO = 1.805E-009 VJ = 0.8 M = 0.6038 .MODEL DSUB D IS = 2.221E-010 N = 1.18 RS = 4.441E-010 BV = 38 CJO = 3E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH32M5LPSQ Spice Model v1.0 Last Revised 2016/12/31 *---------- DMTH3M70LPSW Spice Model ---------- .SUBCKT DMTH3M70LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-005 RS 30 3 1E-006 RG 20 2 0.52 CGS 2 3 1.049E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.55E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.466 + TOX = 1E-007 NSUB = 1E+016 KP = 487.5 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.334E-009 VJ = 0.8 M = 0.5126 .MODEL DSUB D IS = 9E-009 N = 1.29 RS = 0.0007566 BV = 35.86 + CJO = 1.692E-008 VJ = 2 M = 0.2904 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/11 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH3M70LPSWQ Spice Model ---------- .SUBCKT DMTH3M70LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-005 RS 30 3 1E-006 RG 20 2 0.52 CGS 2 3 1.049E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.55E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.466 + TOX = 1E-007 NSUB = 1E+016 KP = 487.5 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.334E-009 VJ = 0.8 M = 0.5126 .MODEL DSUB D IS = 9E-009 N = 1.29 RS = 0.0007566 BV = 35.86 + CJO = 1.692E-008 VJ = 2 M = 0.2904 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/11 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4001SPSQ Spice Model ---------- .SUBCKT DMTH4001SPSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 3.71 CGS 2 3 1.138E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 0 1 D1 12 13 + DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.53 + TOX = 6E-008 NSUB = 1.8E+017 KP = 217 U0 = 600 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.343E-009 VJ = 0.8 M = 0.6142 .MODEL DSUB D IS = 4.393E-011 N = 1.054 RS = 4.441E-010 BV = 44.07 + CJO = 9.45E-009 VJ = 0.9 M = 0.3155 TT = 2.19E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/07/31 *---------- DMTH4001STLW Spice Model ---------- .SUBCKT DMTH4001STLW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 2 CGS 2 3 1.313E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.58 + TOX = 1E-007 NSUB = 1E+016 KP = 299 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.004E-009 VJ = 0.7928 M = 0.9 .MODEL DSUB D IS = 1E-008 N = 1.342 RS = 0.0001901 BV = 43.81 + CJO = 1.58E-008 VJ = 0.9 M = 0.3319 XTI = 0 TT = 4.65E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/01/28 *---------- DMTH4001STLWQ Spice Model ---------- .SUBCKT DMTH4001STLWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 2 CGS 2 3 1.313E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.58 + TOX = 1E-007 NSUB = 1E+016 KP = 299 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.004E-009 VJ = 0.7928 M = 0.9 .MODEL DSUB D IS = 1E-008 N = 1.342 RS = 0.0001901 BV = 43.81 + CJO = 1.58E-008 VJ = 0.9 M = 0.3319 XTI = 0 TT = 4.65E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/01/28 *---------- DMTH4002SCTB Spice Model ---------- .SUBCKT DMTH4002SCTB 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 0.0001 RG 20 2 1.04 CGS 2 3 7.207E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.7 + TOX = 1E-007 NSUB = 1E+015 KP = 250 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.272E-010 VJ = 0.8 M = 0.8547 .MODEL DSUB D IS = 4.7E-009 N = 1.367 RS = 0.000628 BV = 42.23 + CJO = 5E-009 VJ = 0.9 M = 0.36 XTI = 0 TT = 2.32E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1J Last Revised 2020/03/09 *---------- DMTH4002SCTBQ Spice Model ---------- .SUBCKT DMTH4002SCTBQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 0.0001 RG 20 2 1.04 CGS 2 3 7.207E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.7 + TOX = 1E-007 NSUB = 1E+015 KP = 250 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.272E-010 VJ = 0.8 M = 0.8547 .MODEL DSUB D IS = 4.7E-009 N = 1.367 RS = 0.000628 BV = 42.23 + CJO = 5E-009 VJ = 0.9 M = 0.36 XTI = 0 TT = 2.32E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1J Last Revised 2020/03/09 *---------- DMTH4004LK3 Spice Model ---------- .SUBCKT DMTH4004LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004LK3 Spice Model v1.0 Last Revised 2015/12/15 *---------- DMTH4004LK3Q Spice Model ---------- .SUBCKT DMTH4004LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004LK3Q Spice Model v1.0M Last Revised 2016/2/18 *---------- DMTH4004LPS Spice Model ---------- .SUBCKT DMTH4004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004LPS Spice Model v1.0M Last Revised 2016/4/18 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4004LPS Spice Model ---------- .SUBCKT DMTH4004LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004LPSW Spice Model v1.0M Last Revised 2016/4/18 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4004LPSWQ Spice Model ---------- .SUBCKT DMTH4004LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0006761 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 4.581E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 + TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004LPSWQ Spice Model v1.0M Last Revised 2016/4/18 *---------- DMTH4004SCTB Spice Model ---------- .SUBCKT DMTH4004SCTB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SCTB Spice Model v1.0 Last Revised 2015/10/1 *---------- DMTH4004SCTBQ Spice Model ---------- .SUBCKT DMTH4004SCTBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SCTBQ Spice Model v1.0 Last Revised 2015/11/13 *---------- DMTH4004SK3 Spice Model ---------- .SUBCKT DMTH4004SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SK3 Spice Model v1.0 Last Revised 2015/11/20 *---------- DMTH4004SK3Q Spice Model ---------- .SUBCKT DMTH4004SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SK3Q Spice Model v1.0 Last Revised 2016/7/21 *---------- DMTH4004SPS Spice Model ---------- .SUBCKT DMTH4004SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SPS Spice Model v1.0 Last Revised 2015/10/1 *---------- DMTH4004SPSQ Spice Model ---------- .SUBCKT DMTH4004SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SPSQ Spice Model v2.0 Last Revised 2015/11/16 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4004SPS Spice Model ---------- .SUBCKT DMTH4004SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SPSW Spice Model v1.0 Last Revised 2015/10/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4004SPSWQ Spice Model ---------- .SUBCKT DMTH4004SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001299 RS 30 3 0.001 RG 20 2 0.77 CGS 2 3 4.614E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 + TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4004SPSWQ Spice Model v2.0 Last Revised 2015/11/16 *---------- DMTH4005SCT Spice Model ---------- .SUBCKT DMTH4005SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SCT Spice Model v1.0M Last Revised 2016/6/1 *---------- DMTH4005SK3 Spice Model ---------- .SUBCKT DMTH4005SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SK3 Spice Model v1.0M Last Revised 2016/3/8 *---------- DMTH4005SK3Q Spice Model ---------- .SUBCKT DMTH4005SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SK3Q Spice Model v1.0M Last Revised 2016/3/8 *---------- DMTH4005SPS Spice Model ---------- .SUBCKT DMTH4005SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SPS Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH4005SPSQ Spice Model ---------- .SUBCKT DMTH4005SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SPSQ Spice Model v1.0 Last Revised 2015/8/19 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4005SPS Spice Model ---------- .SUBCKT DMTH4005SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SPS Spice Model v1.0 Last Revised 2018/2/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4005SPSWQ Spice Model ---------- .SUBCKT DMTH4005SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.814E-005 RS 30 3 0.001 RG 20 2 0.67 CGS 2 3 2.961E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 + TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 .MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4005SPSWQ Spice Model v1.0 Last Revised 2015/8/19 *---------- DMTH4007LK3 Spice Model ---------- .SUBCKT DMTH4007LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002855 RS 30 3 0.001 RG 20 2 0.62 CGS 2 3 2.005E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007LK3 Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH4007LK3Q Spice Model ---------- .SUBCKT DMTH4007LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002855 RS 30 3 0.001 RG 20 2 0.62 CGS 2 3 2.005E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007LK3Q Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH4007LPS Spice Model ---------- .SUBCKT DMTH4007LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002855 RS 30 3 0.001 RG 20 2 0.62 CGS 2 3 2.005E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007LPS Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH4007LPSQ Spice Model ---------- .SUBCKT DMTH4007LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002855 RS 30 3 0.001 RG 20 2 0.62 CGS 2 3 2.005E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007LPSQ Spice Model v1.0 Last Revised 2015/8/19 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4007LPS Spice Model ---------- .SUBCKT DMTH4007LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002855 RS 30 3 0.001 RG 20 2 0.62 CGS 2 3 2.005E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007LPSW Spice Model v1.0 Last Revised 2018/2/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4007LPSWQ Spice Model ---------- .SUBCKT DMTH4007LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002855 RS 30 3 0.001 RG 20 2 0.62 CGS 2 3 2.005E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007LPSWQ Spice Model v1.0 Last Revised 2015/8/19 ---------- DMTH4007SK3 Spice Model ---------- .SUBCKT DMTH4007SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002288 RS 30 3 0.001 RG 20 2 0.46 CGS 2 3 2.042E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 + TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SK3 Spice Model v1.0M Last Revised 2016/4/25 *---------- DMTH4007SPD Spice Model ---------- .SUBCKT DMTH4007SPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002855 RS 30 3 0.001 RG 20 2 0.62 CGS 2 3 2.005E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPD Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH4007SPDQ Spice Model ---------- .SUBCKT DMTH4007SPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005581 RS 30 3 1E-008 RG 20 2 0.42 CGS 2 3 2.083E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.45E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.54 + TOX = 6E-008 NSUB = 1E+016 KP = 75.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.398E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.675E-010 N = 1.232 RS = 0.005279 BV = 66 CJO = 2.502E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPDQ Spice Model v1.0 Last Revised 2015/11/13 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4007SPD Spice Model ---------- .SUBCKT DMTH4007SPDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002855 RS 30 3 0.001 RG 20 2 0.62 CGS 2 3 2.005E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 + TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPD Spice Model v1.0 Last Revised 2018/2/1 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4007SPDWQ Spice Model ---------- .SUBCKT DMTH4007SPDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005581 RS 30 3 1E-008 RG 20 2 0.42 CGS 2 3 2.083E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.45E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.54 + TOX = 6E-008 NSUB = 1E+016 KP = 75.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.398E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 2.675E-010 N = 1.232 RS = 0.005279 BV = 66 CJO = 2.502E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPDWQ Spice Model v1.0 Last Revised 2015/11/13 ---------- DMTH4007SPS Spice Model ---------- .SUBCKT DMTH4007SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002288 RS 30 3 0.001 RG 20 2 0.46 CGS 2 3 2.042E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 + TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPS Spice Model v1.0 Last Revised 2015/6/15 ---------- DMTH4007SPSQ Spice Model ---------- .SUBCKT DMTH4007SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002288 RS 30 3 0.001 RG 20 2 0.46 CGS 2 3 2.042E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 + TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPSQ Spice Model v1.0 Last Revised 2015/11/12 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. ---------- DMTH4007SPS Spice Model ---------- .SUBCKT DMTH4007SPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002288 RS 30 3 0.001 RG 20 2 0.46 CGS 2 3 2.042E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 + TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPS Spice Model v1.0 Last Revised 2015/6/15 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. ---------- DMTH4007SPSWQ Spice Model ---------- .SUBCKT DMTH4007SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002288 RS 30 3 0.001 RG 20 2 0.46 CGS 2 3 2.042E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 + TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4007SPSWQ Spice Model v1.0 Last Revised 2015/11/12 *---------- DMTH4008LFDFW Spice Model ---------- .SUBCKT DMTH4008LFDFW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007546 RS 30 3 1E-015 RG 20 2 1.82 CGS 2 3 1.01E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.4 + TOX = 6E-008 NSUB = 1E+016 KP = 94.55 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.9 M = 0.8349 .MODEL DSUB D IS = 2.403E-010 N = 1.202 RS = 0.006052 BV = 42.6 + CJO = 1.1E-009 VJ = 0.8 M = 0.6 TT = 9.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4008LFDFW Spice Model v1.0 Last Revised 2018/04/23 *---------- DMTH4008LFDFWQ Spice Model ---------- .SUBCKT DMTH4008LFDFWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007546 RS 30 3 1E-015 RG 20 2 1.82 CGS 2 3 1.01E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.4 + TOX = 6E-008 NSUB = 1E+016 KP = 94.55 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.9 M = 0.8349 .MODEL DSUB D IS = 2.403E-010 N = 1.202 RS = 0.006052 BV = 42.6 + CJO = 1.1E-009 VJ = 0.8 M = 0.6 TT = 9.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4008LFDFWQ Spice Model v1.0 Last Revised 2018/04/23 *---------- DMTH4008LPDW Spice Model ---------- .SUBCKT DMTH4008LPDW D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0052 RS 30 3 1E-06 RG 20 2 2.06 CGS 2 3 8.6E-10 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.1 + TOX = 1E-07 NSUB = 1E+16 KP = 50 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.589E-10 VJ = 0.8 M = 0.8793 .MODEL DSUB D IS = 1.15E-09 N = 1.323 RS = 0.004335 BV = 42.53 + CJO = 1.15E-09 VJ = 0.9 M = 0.3542 XTI = 0 TT = 1.595E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4008LPDWQ Spice Model ---------- .SUBCKT DMTH4008LPDWQ D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0052 RS 30 3 1E-06 RG 20 2 2.06 CGS 2 3 8.6E-10 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.1 + TOX = 1E-07 NSUB = 1E+16 KP = 50 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.589E-10 VJ = 0.8 M = 0.8793 .MODEL DSUB D IS = 1.15E-09 N = 1.323 RS = 0.004335 BV = 42.53 + CJO = 1.15E-09 VJ = 0.9 M = 0.3542 XTI = 0 TT = 1.595E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/10 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4008LPS Spice Model ---------- .SUBCKT DMTH4008LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007546 RS 30 3 1E-015 RG 20 2 1.82 CGS 2 3 1.01E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.4 + TOX = 6E-008 NSUB = 1E+016 KP = 94.55 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.9 M = 0.8349 .MODEL DSUB D IS = 2.403E-010 N = 1.202 RS = 0.006052 BV = 42.6 + CJO = 1.1E-009 VJ = 0.8 M = 0.6 TT = 9.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4008LPS Spice Model v1.0 Last Revised 2018/04/23 *---------- DMTH4008LPSQ Spice Model ---------- .SUBCKT DMTH4008LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007546 RS 30 3 1E-015 RG 20 2 1.82 CGS 2 3 1.01E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.4 + TOX = 6E-008 NSUB = 1E+016 KP = 94.55 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.9 M = 0.8349 .MODEL DSUB D IS = 2.403E-010 N = 1.202 RS = 0.006052 BV = 42.6 + CJO = 1.1E-009 VJ = 0.8 M = 0.6 TT = 9.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4008LPSQ Spice Model v1.0 Last Revised 2018/04/23 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4008LPS Spice Model ---------- .SUBCKT DMTH4008LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007546 RS 30 3 1E-015 RG 20 2 1.82 CGS 2 3 1.01E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.4 + TOX = 6E-008 NSUB = 1E+016 KP = 94.55 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.9 M = 0.8349 .MODEL DSUB D IS = 2.403E-010 N = 1.202 RS = 0.006052 BV = 42.6 + CJO = 1.1E-009 VJ = 0.8 M = 0.6 TT = 9.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4008LPS Spice Model v1.0 Last Revised 2018/04/23 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4008LPSWQ Spice Model ---------- .SUBCKT DMTH4008LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007546 RS 30 3 1E-015 RG 20 2 1.82 CGS 2 3 1.01E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.4 + TOX = 6E-008 NSUB = 1E+016 KP = 94.55 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.5E-010 VJ = 0.9 M = 0.8349 .MODEL DSUB D IS = 2.403E-010 N = 1.202 RS = 0.006052 BV = 42.6 + CJO = 1.1E-009 VJ = 0.8 M = 0.6 TT = 9.8E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4008LPSWQ Spice Model v1.0 Last Revised 2018/04/23 *---------- DMTH4011SPD Spice Model ---------- .SUBCKT DMTH4011SPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007344 RS 30 3 1E-015 RG 20 2 2.76 CGS 2 3 7.856E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.138 + TOX = 6E-008 NSUB = 1E+016 KP = 34.25 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.712E-010 VJ = 0.8 M = 0.7249 .MODEL DSUB D IS = 2.227E-010 N = 1.288 RS = 0.007593 BV = 43 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4011SPD Spice Model v1.0 Last Revised 2018/1/2 *---------- DMTH4011SPDQ Spice Model ---------- .SUBCKT DMTH4011SPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007344 RS 30 3 1E-015 RG 20 2 2.76 CGS 2 3 7.856E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.138 + TOX = 6E-008 NSUB = 1E+016 KP = 34.25 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.712E-010 VJ = 0.8 M = 0.7249 .MODEL DSUB D IS = 2.227E-010 N = 1.288 RS = 0.007593 BV = 43 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4011SPDQ Spice Model v1.0 Last Revised 2018/1/2 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4011SPD Spice Model ---------- .SUBCKT DMTH4011SPDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007344 RS 30 3 1E-015 RG 20 2 2.76 CGS 2 3 7.856E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.138 + TOX = 6E-008 NSUB = 1E+016 KP = 34.25 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.712E-010 VJ = 0.8 M = 0.7249 .MODEL DSUB D IS = 2.227E-010 N = 1.288 RS = 0.007593 BV = 43 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4011SPD Spice Model v1.0 Last Revised 2018/1/2 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4011SPDWQ Spice Model ---------- .SUBCKT DMTH4011SPDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007344 RS 30 3 1E-015 RG 20 2 2.76 CGS 2 3 7.856E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.138 + TOX = 6E-008 NSUB = 1E+016 KP = 34.25 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.712E-010 VJ = 0.8 M = 0.7249 .MODEL DSUB D IS = 2.227E-010 N = 1.288 RS = 0.007593 BV = 43 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 5E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4011SPDWQ Spice Model v1.0 Last Revised 2018/1/2 *---------- DMTH4014LDVW Spice Model ---------- .SUBCKT DMTH4014LDVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0059 RS 30 3 0.0001 RG 20 2 1.07 CGS 2 3 7.26E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.757 + TOX = 1E-007 NSUB = 1E+014 KP = 45 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.759E-010 VJ = 0.8 M = 0.6503 .MODEL DSUB D IS = 5.5E-010 N = 1.265 RS = 0.004235 BV = 43.55 + CJO = 5.3E-010 VJ = 0.9 M = 0.3142 XTI = 0 TT = 5.65E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/08/04 *---------- DMTH4014LDVWQ Spice Model ---------- .SUBCKT DMTH4014LDVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0059 RS 30 3 0.0001 RG 20 2 1.07 CGS 2 3 7.26E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.757 + TOX = 1E-007 NSUB = 1E+014 KP = 45 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.759E-010 VJ = 0.8 M = 0.6503 .MODEL DSUB D IS = 5.5E-010 N = 1.265 RS = 0.004235 BV = 43.55 + CJO = 5.3E-010 VJ = 0.9 M = 0.3142 XTI = 0 TT = 5.65E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/08/04 *---------- DMTH4014LFVW Spice Model ---------- .SUBCKT DMTH4014LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0069 RS 30 3 0.0001 RG 20 2 1.07 CGS 2 3 7.3E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.1 + TOX = 1E-007 NSUB = 1E+015 KP = 55 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.735E-010 VJ = 0.8 M = 0.691 .MODEL DSUB D IS = 2.7E-009 N = 1.396 RS = 0.004111 BV = 43.27 + CJO = 5E-010 VJ = 0.9 M = 0.3151 XTI = 0 TT = 5.65E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/11/19 *---------- DMTH4014LFVWQ Spice Model ---------- .SUBCKT DMTH4014LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0069 RS 30 3 0.0001 RG 20 2 1.07 CGS 2 3 7.3E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.1 + TOX = 1E-007 NSUB = 1E+015 KP = 55 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.735E-010 VJ = 0.8 M = 0.691 .MODEL DSUB D IS = 2.7E-009 N = 1.396 RS = 0.004111 BV = 43.27 + CJO = 5E-010 VJ = 0.9 M = 0.3151 XTI = 0 TT = 5.65E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/11/19 *---------- DMTH4014LPD Spice Model ---------- .SUBCKT DMTH4014LPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008629 RS 30 3 0.001 RG 20 2 1.15 CGS 2 3 7.084E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.88E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 + TOX = 6E-008 NSUB = 1E+016 KP = 63.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.977E-010 VJ = 0.7997 M = 0.8 .MODEL DSUB D IS = 2.266E-010 N = 1.2 RS = 0.01002 BV = 44.02 + CJO = 1.3E-009 VJ = 0.8 M = 0.6 TT = 5.95E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4014LPD Spice Model v1.0 Last Revised 2018/04/16 *---------- DMTH4014LPD Spice Model ---------- .SUBCKT DMTH4014LPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008629 RS 30 3 0.001 RG 20 2 1.15 CGS 2 3 7.084E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.88E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 + TOX = 6E-008 NSUB = 1E+016 KP = 63.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.977E-010 VJ = 0.7997 M = 0.8 .MODEL DSUB D IS = 2.266E-010 N = 1.2 RS = 0.01002 BV = 44.02 + CJO = 1.3E-009 VJ = 0.8 M = 0.6 TT = 5.95E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4014LPD Spice Model v1.0 Last Revised 2018/04/16 *---------- DMTH4014LPDQ Spice Model ---------- .SUBCKT DMTH4014LPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008629 RS 30 3 0.001 RG 20 2 1.15 CGS 2 3 7.084E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.88E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 + TOX = 6E-008 NSUB = 1E+016 KP = 63.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.977E-010 VJ = 0.7997 M = 0.8 .MODEL DSUB D IS = 2.266E-010 N = 1.2 RS = 0.01002 BV = 44.02 + CJO = 1.3E-009 VJ = 0.8 M = 0.6 TT = 5.95E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4014LPDQ Spice Model v1.0 Last Revised 2018/04/16 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4014LPD Spice Model ---------- .SUBCKT DMTH4014LPDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008629 RS 30 3 0.001 RG 20 2 1.15 CGS 2 3 7.084E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.88E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 + TOX = 6E-008 NSUB = 1E+016 KP = 63.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.977E-010 VJ = 0.7997 M = 0.8 .MODEL DSUB D IS = 2.266E-010 N = 1.2 RS = 0.01002 BV = 44.02 + CJO = 1.3E-009 VJ = 0.8 M = 0.6 TT = 5.95E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4014LPD Spice Model v1.0 Last Revised 2018/04/16 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH4014LPDWQ Spice Model ---------- .SUBCKT DMTH4014LPDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008629 RS 30 3 0.001 RG 20 2 1.15 CGS 2 3 7.084E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.88E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 + TOX = 6E-008 NSUB = 1E+016 KP = 63.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.977E-010 VJ = 0.7997 M = 0.8 .MODEL DSUB D IS = 2.266E-010 N = 1.2 RS = 0.01002 BV = 44.02 + CJO = 1.3E-009 VJ = 0.8 M = 0.6 TT = 5.95E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH4014LPDWQ Spice Model v1.0 Last Revised 2018/04/16 *---------- DMTH4014LPSW Spice Model ---------- .SUBCKT DMTH4014LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0059 RS 30 3 0.0001 RG 20 2 1.07 CGS 2 3 7.26E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.757 + TOX = 1E-007 NSUB = 1E+014 KP = 45 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.759E-010 VJ = 0.8 M = 0.6503 .MODEL DSUB D IS = 5.5E-010 N = 1.265 RS = 0.004235 BV = 43.55 + CJO = 5.3E-010 VJ = 0.9 M = 0.3142 XTI = 0 TT = 5.65E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/08/04 *---------- DMTH4014LPSWQ Spice Model ---------- .SUBCKT DMTH4014LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : B M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0059 RS 30 3 0.0001 RG 20 2 1.07 CGS 2 3 7.26E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.757 + TOX = 1E-007 NSUB = 1E+014 KP = 45 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.759E-010 VJ = 0.8 M = 0.6503 .MODEL DSUB D IS = 5.5E-010 N = 1.265 RS = 0.004235 BV = 43.55 + CJO = 5.3E-010 VJ = 0.9 M = 0.3142 XTI = 0 TT = 5.65E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/08/04 *---------- DMTH4014SPSW Spice Model ---------- .SUBCKT DMTH4014SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00829 RS 30 3 0.0001 RG 20 2 2.76 CGS 2 3 7.952E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.33 + TOX = 1E-007 NSUB = 1E+015 KP = 50 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.302E-010 VJ = 0.8 M = 0.6435 .MODEL DSUB D IS = 9.3E-010 N = 1.363 RS = 0.003251 BV = 41.78 + CJO = 5.3E-010 VJ = 0.9 M = 0.3216 XTI = 0 TT = 5.1E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMTH4014SPSWQ Spice Model ---------- .SUBCKT DMTH4014SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00829 RS 30 3 0.0001 RG 20 2 2.76 CGS 2 3 7.952E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.33 + TOX = 1E-007 NSUB = 1E+015 KP = 50 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.302E-010 VJ = 0.8 M = 0.6435 .MODEL DSUB D IS = 9.3E-010 N = 1.363 RS = 0.003251 BV = 41.78 + CJO = 5.3E-010 VJ = 0.9 M = 0.3216 XTI = 0 TT = 5.1E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMTH41M2SPS Spice Model ---------- .SUBCKT DMTH41M2SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 3.64 CGS 2 3 1.162E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.57 TOX = 1E-007 + NSUB = 1E+016 KP = 201.5 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6155 .MODEL DSUB D IS = 6.5E-009 N = 1.341 RS = 4.441E-010 BV = 42.47 + CJO = 7.3E-009 VJ = 0.9 M = 0.343 XTI = 0 TT = 3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/12 *The model can only be used at 25 degC *---------- DMTH41M2SPSQ Spice Model ---------- .SUBCKT DMTH41M2SPSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 3.64 CGS 2 3 1.162E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.57 TOX = 1E-007 + NSUB = 1E+016 KP = 201.5 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6155 .MODEL DSUB D IS = 6.5E-009 N = 1.341 RS = 4.441E-010 BV = 42.47 + CJO = 7.3E-009 VJ = 0.9 M = 0.343 XTI = 0 TT = 3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/12 *The model can only be used at 25 degC *---------- DMTH41M3LPSW Spice Model ---------- .SUBCKT DMTH41M3LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 0.76 CGS 2 3 4.918E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.079 + TOX = 1E-007 NSUB = 1E+016 KP = 183.9 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.619E-010 VJ = 1.806 M = 0.9 .MODEL DSUB D IS = 7E-009 N = 1.312 RS = 0.001235 BV = 43.26 + CJO = 6.508E-009 VJ = 0.8716 M = 0.3 XTI = 0 TT = 4.872E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/29 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH41M3LPSWQ Spice Model ---------- .SUBCKT DMTH41M3LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 0.76 CGS 2 3 4.918E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.079 + TOX = 1E-007 NSUB = 1E+016 KP = 183.9 U0 = 1000 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.619E-010 VJ = 1.806 M = 0.9 .MODEL DSUB D IS = 7E-009 N = 1.312 RS = 0.001235 BV = 43.26 + CJO = 6.508E-009 VJ = 0.8716 M = 0.3 XTI = 0 TT = 4.872E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/29 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH41M3SPSW Spice Model ---------- .SUBCKT DMTH41M3SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0004396 RS 30 3 0.0001 RG 20 2 0.66 CGS 2 3 5.381E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.57E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.726 + TOX = 1E-007 NSUB = 1E+014 KP = 305.7 U0 = 206.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.281E-010 VJ = 1.98 M = 0.9 .MODEL DSUB D IS = 6.051E-009 N = 1.341 RS = 4.441E-010 BV = 43.12 + CJO = 6.68E-009 VJ = 7.966 M = 0.8 XTI = 0 TT = 4.889E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/29 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH41M3SPSWQ Spice Model ---------- .SUBCKT DMTH41M3SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0004396 RS 30 3 0.0001 RG 20 2 0.66 CGS 2 3 5.381E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.57E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.726 + TOX = 1E-007 NSUB = 1E+014 KP = 305.7 U0 = 206.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.281E-010 VJ = 1.98 M = 0.9 .MODEL DSUB D IS = 6.051E-009 N = 1.341 RS = 4.441E-010 BV = 43.12 + CJO = 6.68E-009 VJ = 7.966 M = 0.8 XTI = 0 TT = 4.889E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/08/29 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH41M8SPS Spice Model ---------- .SUBCKT DMTH41M8SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.471E-006 RS 30 3 0.0005 RG 20 2 1.21 CGS 2 3 7.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 + TOX = 6E-008 NSUB = 1E+016 KP = 144.8 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4E-010 VJ = 0.8 M = 0.7641 .MODEL DSUB D IS = 9.454E-010 N = 1.238 RS = 0.0002392 BV = 43 CJO = 5E-009 VJ = 0.8 M = 0.6 TT=3.08E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH41M8SPS Spice Model v1.0 Last Revised 2018/04/09 *---------- DMTH41M8SPSQ Spice Model ---------- .SUBCKT DMTH41M8SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.471E-006 RS 30 3 0.0005 RG 20 2 1.21 CGS 2 3 7.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 + TOX = 6E-008 NSUB = 1E+016 KP = 144.8 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4E-010 VJ = 0.8 M = 0.7641 .MODEL DSUB D IS = 9.454E-010 N = 1.238 RS = 0.0002392 BV = 43 CJO = 5E-009 VJ = 0.8 M = 0.6 TT=3.08E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH41M8SPSQ Spice Model v1.0 Last Revised 2018/04/09 *---------- DMTH42M4SPS Spice Model ---------- .SUBCKT DMTH42M4SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.000485 RS 30 3 1E-006 RG 20 2 1.21 CGS 2 3 6.943E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.65 + TOX = 1E-007 NSUB = 1E+015 KP = 155 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4E-010 VJ = 0.8 M = 0.6279 .MODEL DSUB D IS = 4E-009 N = 1.34 RS = 4.441E-010 BV = 42.3 + CJO = 4.85E-009 VJ = 0.9 M = 0.3451 XTI = 0 TT = 5.15E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/10/14 *---------- DMTH41M2SPSQ_RC Spice Model ---------- .SUBCKT DMTH41M2SPSQ_RC 100 200 300 500 600 * TERMINALS : D G S TJ TA * TJ : Junction TEMPERATURE (degC) * TA : MOUNTING BASE TEMPERATURE (degC) * MODEL FORMAT : SPICE3 **************Foster(RC) Thermal Model************** * Editor : Stan Li VD 100 10 0 VG 200 20 0 VS 300 30 0 Vj 500 50 0 Vamb 600 60 0 Gth 0 50 value = {i(VD)*v(10)+v(20)*i(VG)+v(30)*i(VS)} RTH1 50 51 4.324E-007 RTH2 51 52 0.01197 RTH3 52 53 0.2603 RTH4 53 54 0.7616 RTH5 54 55 0.03312 RTH6 55 60 0.004196 CTH1 50 51 1.586E-008 CTH2 51 52 0.0005638 CTH3 52 53 0.03095 CTH4 53 54 0.04398 CTH5 54 55 0.007357 CTH6 55 60 0.0001677 *Diodes Foster(RC) Thermal Model v1.0 Last Revised 2023/05/08 *Self heating is ignored *TJ is output, please floating *TA node has to be connected to a constant voltage source Vdc representing the ambient temperature. *************************************************** * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 3.64 CGS 2 3 1.162E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.57 TOX = 1E-007 + NSUB = 1E+016 KP = 201.5 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6155 .MODEL DSUB D IS = 6.5E-009 N = 1.341 RS = 4.441E-010 BV = 42.47 + CJO = 7.3E-009 VJ = 0.9 M = 0.343 XTI = 0 TT = 3E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/05/08 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH42M5LPSW Spice Model ---------- .SUBCKT DMTH42M5LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001853 RS 30 3 0.0001 RG 20 2 1.88 CGS 2 3 2.193E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.92E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.289 + TOX = 1E-007 NSUB = 1E+016 KP = 406.4 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.7E-010 VJ = 0.8 M = 0.6476 .MODEL DSUB D IS = 2.25E-009 N = 1.302 RS = 0.0003529 BV = 43.75 + CJO = 3.111E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.819E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/05/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH42M5LPSWQ Spice Model ---------- .SUBCKT DMTH42M5LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001853 RS 30 3 0.0001 RG 20 2 1.88 CGS 2 3 2.193E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.92E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.289 + TOX = 1E-007 NSUB = 1E+016 KP = 406.4 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.7E-010 VJ = 0.8 M = 0.6476 .MODEL DSUB D IS = 2.25E-009 N = 1.302 RS = 0.0003529 BV = 43.75 + CJO = 3.111E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.819E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/05/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH43M7LFG Spice Model ---------- .SUBCKT DMTH43M7LFG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001625 RS 30 3 0.0001 RG 20 2 1.9 CGS 2 3 2.125E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.96E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.366 + TOX = 1E-007 NSUB = 1E+015 KP = 478.1 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.24E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.8E-009 N = 1.329 RS = 0.0004201 BV = 44.06 + CJO = 3.16E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.976E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/08/22 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH43M7LFGQ Spice Model ---------- .SUBCKT DMTH43M7LFGQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001625 RS 30 3 0.0001 RG 20 2 1.9 CGS 2 3 2.125E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.96E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.366 + TOX = 1E-007 NSUB = 1E+015 KP = 478.1 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.24E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 3.8E-009 N = 1.329 RS = 0.0004201 BV = 44.06 + CJO = 3.16E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.976E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/08/16 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH43M8LFG Spice Model ---------- .SUBCKT DMTH43M8LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 2.44 CGS 2 3 2.707E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 78 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 6.839E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.337E-011 N = 1.021 RS = 0.0007871 BV = 43.77 + CJO = 2.7E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH43M8LFG Spice Model v1.0J Last Revised 2018/01/02 *---------- DMTH43M8LFGQ Spice Model ---------- .SUBCKT DMTH43M8LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 2.44 CGS 2 3 2.707E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 78 U0 = 600 KAPPA = 10 .MODEL DCGD D CJO = 6.839E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.337E-011 N = 1.021 RS = 0.0007871 BV = 43.77 + CJO = 2.7E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH43M8LFGQ Spice Model v1.0J Last Revised 2018/01/02 *---------- DMTH43M8LFVW Spice Model ---------- .SUBCKT DMTH43M8LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003351 RS 30 3 1E-006 RG 20 2 2.41 CGS 2 3 2.706E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.18E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.646 + TOX = 1E-007 NSUB = 1E+016 KP = 275.4 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.19E-010 VJ = 0.8 M = 0.5803 .MODEL DSUB D IS = 7.8E-009 N = 1.335 RS = 0.001767 BV = 44.03 + CJO = 2.1E-009 VJ = 0.9 M = 0.3347 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH43M8LFVWQ Spice Model ---------- .SUBCKT DMTH43M8LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003351 RS 30 3 1E-006 RG 20 2 2.41 CGS 2 3 2.706E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.18E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.646 + TOX = 1E-007 NSUB = 1E+016 KP = 275.4 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.19E-010 VJ = 0.8 M = 0.5803 .MODEL DSUB D IS = 7.8E-009 N = 1.335 RS = 0.001767 BV = 44.03 + CJO = 2.1E-009 VJ = 0.9 M = 0.3347 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH43M8LK3 Spice Model ---------- .SUBCKT DMTH43M8LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001508 RS 30 3 0.0005 RG 20 2 2.54 CGS 2 3 2.691E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 120 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.505E-010 VJ = 0.8 M = 0.7773 .MODEL DSUB D IS = 2.615E-010 N = 1.185 RS = 0.003471 BV = 45 CJO = 3E-009 VJ = 0.8 M = 0.6 TT=1.77E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH43M8LK3 Spice Model v1.0 Last Revised 2017/4/18 *---------- DMTH43M8LK3Q Spice Model ---------- .SUBCKT DMTH43M8LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001508 RS 30 3 0.0005 RG 20 2 2.54 CGS 2 3 2.691E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 120 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.505E-010 VJ = 0.8 M = 0.7773 .MODEL DSUB D IS = 2.615E-010 N = 1.185 RS = 0.003471 BV = 45 CJO = 3E-009 VJ = 0.8 M = 0.6 TT=1.77E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH43M8LK3Q Spice Model v1.0 Last Revised 2017/4/18 *---------- DMTH43M8LPDW Spice Model ---------- .SUBCKT DMTH43M8LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002412 RS 30 3 0.0001 RG 20 2 2.4 CGS 2 3 2.699E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.037E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.538 + TOX = 1E-007 NSUB = 1E+016 KP = 221.4 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.17E-010 VJ = 2 M = 0.7999 .MODEL DSUB D IS = 7.063E-010 N = 1.192 RS = 0.003446 BV = 41.99 + CJO = 1.917E-009 VJ = 2 M = 0.4065 XTI = 0 TT = 3.928E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH43M8LPDWQ Spice Model ---------- .SUBCKT DMTH43M8LPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002412 RS 30 3 0.0001 RG 20 2 2.4 CGS 2 3 2.699E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.037E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.538 + TOX = 1E-007 NSUB = 1E+016 KP = 221.4 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.17E-010 VJ = 2 M = 0.7999 .MODEL DSUB D IS = 7.063E-010 N = 1.192 RS = 0.003446 BV = 41.99 + CJO = 1.917E-009 VJ = 2 M = 0.4065 XTI = 0 TT = 3.928E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH43M8LPS Spice Model ---------- .SUBCKT DMTH43M8LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001508 RS 30 3 0.0005 RG 20 2 2.54 CGS 2 3 2.691E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 120 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.505E-010 VJ = 0.8 M = 0.7773 .MODEL DSUB D IS = 2.615E-010 N = 1.185 RS = 0.003471 BV = 45 CJO = 3E-009 VJ = 0.8 M = 0.6 TT=1.77E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH43M8LPS Spice Model v1.0 Last Revised 2017/5/11 *---------- DMTH43M8LPSQ Spice Model ---------- .SUBCKT DMTH43M8LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001508 RS 30 3 0.0005 RG 20 2 2.54 CGS 2 3 2.691E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 120 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.505E-010 VJ = 0.8 M = 0.7773 .MODEL DSUB D IS = 2.615E-010 N = 1.185 RS = 0.003471 BV = 45 CJO = 3E-009 VJ = 0.8 M = 0.6 TT=1.77E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH43M8LPSQ Spice Model v1.0 Last Revised 2017/6/12 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH43M8LPS Spice Model ---------- .SUBCKT DMTH43M8LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001508 RS 30 3 0.0005 RG 20 2 2.54 CGS 2 3 2.691E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 120 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.505E-010 VJ = 0.8 M = 0.7773 .MODEL DSUB D IS = 2.615E-010 N = 1.185 RS = 0.003471 BV = 45 CJO = 3E-009 VJ = 0.8 M = 0.6 TT=1.77E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH43M8LPS Spice Model v1.0 Last Revised 2017/5/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH43M8LPSWQ Spice Model ---------- .SUBCKT DMTH43M8LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001508 RS 30 3 0.0005 RG 20 2 2.54 CGS 2 3 2.691E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 120 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.505E-010 VJ = 0.8 M = 0.7773 .MODEL DSUB D IS = 2.615E-010 N = 1.185 RS = 0.003471 BV = 45 CJO = 3E-009 VJ = 0.8 M = 0.6 TT=1.77E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH43M8LPSWQ Spice Model v1.0 Last Revised 2017/6/12 *---------- DMTH43M8SPDW Spice Model ---------- .SUBCKT DMTH43M8SPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00271 RS 30 3 0.0001 RG 20 2 2.36 CGS 2 3 2.877E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.197 + TOX = 1E-007 NSUB = 9.942E+015 KP = 278.6 U0 = 337.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.116E-010 VJ = 3 M = 0.8826 .MODEL DSUB D IS = 1.246E-009 N = 1.267 RS = 0.002656 BV = 41.9 + CJO = 1.962E-009 VJ = 3 M = 0.4924 XTI = 0 TT = 3.956E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH43M8SPDWQ Spice Model ---------- .SUBCKT DMTH43M8SPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00271 RS 30 3 0.0001 RG 20 2 2.36 CGS 2 3 2.877E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.197 + TOX = 1E-007 NSUB = 9.942E+015 KP = 278.6 U0 = 337.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.116E-010 VJ = 3 M = 0.8826 .MODEL DSUB D IS = 1.246E-009 N = 1.267 RS = 0.002656 BV = 41.9 + CJO = 1.962E-009 VJ = 3 M = 0.4924 XTI = 0 TT = 3.956E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH45M5LFVW Spice Model ---------- .SUBCKT DMTH45M5LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0031 RS 30 3 1E-006 RG 20 2 1.54 CGS 2 3 9.4E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.3 + TOX = 1E-007 NSUB = 1E+015 KP = 160 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.152E-010 VJ = 0.8 M = 0.8026 .MODEL DSUB D IS = 1.05E-009 N = 1.281 RS = 0.001264 BV = 42.47 + CJO = 1.45E-009 VJ = 0.9 M = 0.32 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2023/01/30 "*The model is an approximation of the device, and it may not show the true device performance under all conditions." "*The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet." *---------- DMTH45M5LFVWQ Spice Model ---------- .SUBCKT DMTH45M5LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0031 RS 30 3 1E-006 RG 20 2 1.54 CGS 2 3 9.4E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.3 + TOX = 1E-007 NSUB = 1E+015 KP = 160 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.152E-010 VJ = 0.8 M = 0.8026 .MODEL DSUB D IS = 1.05E-009 N = 1.281 RS = 0.001264 BV = 42.47 + CJO = 1.45E-009 VJ = 0.9 M = 0.32 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2023/01/30 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH45M5LPDW Spice Model ---------- .SUBCKT DMTH45M5LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.002328 RS 30 3 1E-06 RG 20 2 1.54 CGS 2 3 9.46E-10 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.35E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5E+04 ETA = 0 VTO = 1.995 + TOX = 1E-07 NSUB = 1E+15 KP = 90 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.06E-10 VJ = 0.8 M = 0.6484 .MODEL DSUB D IS = 1.86E-09 N = 1.315 RS = 0.002431 BV = 42.4 + CJO = 1.46E-09 VJ = 0.9 M = 0.3161 XTI = 0 TT = 2.95E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/07/22 *The model can only be used at 25 degC *---------- DMTH45M5LPDWQ Spice Model ---------- .SUBCKT DMTH45M5LPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.002328 RS 30 3 1E-06 RG 20 2 1.54 CGS 2 3 9.46E-10 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.35E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5E+04 ETA = 0 VTO = 1.995 + TOX = 1E-07 NSUB = 1E+15 KP = 90 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.06E-10 VJ = 0.8 M = 0.6484 .MODEL DSUB D IS = 1.86E-09 N = 1.315 RS = 0.002431 BV = 42.4 + CJO = 1.46E-09 VJ = 0.9 M = 0.3161 XTI = 0 TT = 2.95E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/07/22 *The model can only be used at 25 degC *---------- DMTH45M5LPSW Spice Model ---------- .SUBCKT DMTH45M5LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0022 RS 30 3 1E-006 RG 20 2 1.54 CGS 2 3 9.4E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.42E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.985 + TOX = 1E-007 NSUB = 1E+015 KP = 109 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.355E-010 VJ = 0.8 M = 0.7464 .MODEL DSUB D IS = 1.47E-009 N = 1.279 RS = 0.001303 BV = 42.47 + CJO = 1.45E-009 VJ = 0.9 M = 0.32 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *The model can only be used at 25 degC *---------- DMTH45M5LPSWQ Spice Model ---------- .SUBCKT DMTH45M5LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0022 RS 30 3 1E-006 RG 20 2 1.54 CGS 2 3 9.4E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.42E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.985 + TOX = 1E-007 NSUB = 1E+015 KP = 109 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.355E-010 VJ = 0.8 M = 0.7464 .MODEL DSUB D IS = 1.47E-009 N = 1.279 RS = 0.001303 BV = 42.47 + CJO = 1.45E-009 VJ = 0.9 M = 0.32 XTI = 0 TT = 2.95E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *The model can only be used at 25 degC *---------- DMTH45M5SFVW Spice Model ---------- .SUBCKT DMTH45M5SFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00207 RS 30 3 1E-06 RG 20 2 1.54 CGS 2 3 1.076E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.75E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 3E+04 ETA = 0 VTO = 3.4 + TOX = 1E-07 NSUB = 1E+15 KP = 70 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.27E-10 VJ = 0.8 M = 0.6771 .MODEL DSUB D IS = 9.2E-10 N = 1.337 RS = 0.0009575 BV = 42.4 + CJO = 1.5E-09 VJ = 0.9 M = 0.3498 XTI = 0 TT = 2.95E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/07/22 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH45M5SFVWQ Spice Model ---------- .SUBCKT DMTH45M5SFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00207 RS 30 3 1E-06 RG 20 2 1.54 CGS 2 3 1.076E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.75E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 3E+04 ETA = 0 VTO = 3.4 + TOX = 1E-07 NSUB = 1E+15 KP = 70 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.27E-10 VJ = 0.8 M = 0.6771 .MODEL DSUB D IS = 9.2E-10 N = 1.337 RS = 0.0009575 BV = 42.4 + CJO = 1.5E-09 VJ = 0.9 M = 0.3498 XTI = 0 TT = 2.95E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/07/22 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH45M5SPDW Spice Model ---------- .SUBCKT DMTH45M5SPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00207 RS 30 3 1E-06 RG 20 2 1.54 CGS 2 3 1.076E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.75E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 3E+04 ETA = 0 VTO = 3.4 + TOX = 1E-07 NSUB = 1E+15 KP = 70 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.27E-10 VJ = 0.8 M = 0.6771 .MODEL DSUB D IS = 9.2E-10 N = 1.337 RS = 0.0009575 BV = 42.4 + CJO = 1.5E-09 VJ = 0.9 M = 0.3498 XTI = 0 TT = 2.95E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/07/22 *The model can only be used at 25 degC *---------- DMTH45M5SPDWQ Spice Model ---------- .SUBCKT DMTH45M5SPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00207 RS 30 3 1E-06 RG 20 2 1.54 CGS 2 3 1.076E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.75E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 3E+04 ETA = 0 VTO = 3.4 + TOX = 1E-07 NSUB = 1E+15 KP = 70 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.27E-10 VJ = 0.8 M = 0.6771 .MODEL DSUB D IS = 9.2E-10 N = 1.337 RS = 0.0009575 BV = 42.4 + CJO = 1.5E-09 VJ = 0.9 M = 0.3498 XTI = 0 TT = 2.95E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/07/22 *The model can only be used at 25 degC *---------- DMTH45M5SPSW Spice Model ---------- .SUBCKT DMTH45M5SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00111 RS 30 3 1E-006 RG 20 2 1.54 CGS 2 3 1.066E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.66E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.867E+005 ETA = 0 VTO = 3.171 + TOX = 1.455E-006 NSUB = 1E+015 KP = 51 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.71E-010 VJ = 0.8 M = 0.7209 .MODEL DSUB D IS = 1E-009 N = 1.327 RS = 0.0003565 BV = 42.26 + CJO = 1.49E-009 VJ = 0.9 M = 0.3241 XTI = 0 TT = 3.065E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *The model can only be used at 25 degC *---------- DMTH45M5SPSWQ Spice Model ---------- .SUBCKT DMTH45M5SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00111 RS 30 3 1E-006 RG 20 2 1.54 CGS 2 3 1.066E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.66E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.867E+005 ETA = 0 VTO = 3.171 + TOX = 1.455E-006 NSUB = 1E+015 KP = 51 U0 = 400 KAPPA = 10 IS = 0 .MODEL DCGD D CJO = 1.71E-010 VJ = 0.8 M = 0.7209 .MODEL DSUB D IS = 1E-009 N = 1.327 RS = 0.0003565 BV = 42.26 + CJO = 1.49E-009 VJ = 0.9 M = 0.3241 XTI = 0 TT = 3.065E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/31 *The model can only be used at 25 degC *---------- DMTH46M7SFVW Spice Model ---------- .SUBCKT DMTH46M7SFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00264 RS 30 3 1E-06 RG 20 2 1.13 CGS 2 3 1.324E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-11 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 3.076 + TOX = 1E-07 NSUB = 1E+15 KP = 87 U0 = 479.9 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.41E-10 VJ = 0.8 M = 0.7569 .MODEL DSUB D IS = 2.85E-09 N = 1.419 RS = 0.001299 BV = 42.4 + CJO = 1.125E-09 VJ = 0.9 M = 0.3133 XTI = 0 TT = 5.25E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/07/26 *The model can only be used at 25 degC *---------- DMTH46M7SFVWQ Spice Model ---------- .SUBCKT DMTH46M7SFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00264 RS 30 3 1E-06 RG 20 2 1.13 CGS 2 3 1.324E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.6E-11 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 3.076 + TOX = 1E-07 NSUB = 1E+15 KP = 87 U0 = 479.9 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.41E-10 VJ = 0.8 M = 0.7569 .MODEL DSUB D IS = 2.85E-09 N = 1.419 RS = 0.001299 BV = 42.4 + CJO = 1.125E-09 VJ = 0.9 M = 0.3133 XTI = 0 TT = 5.25E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/07/26 *The model can only be used at 25 degC *---------- DMTH47M2LFVW Spice Model ---------- .SUBCKT DMTH47M2LFVW D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0052 RS 30 3 1E-06 RG 20 2 2.06 CGS 2 3 8.6E-10 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.1 + TOX = 1E-07 NSUB = 1E+16 KP = 50 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.589E-10 VJ = 0.8 M = 0.8793 .MODEL DSUB D IS = 1.15E-09 N = 1.323 RS = 0.004335 BV = 42.53 + CJO = 1.15E-09 VJ = 0.9 M = 0.3542 XTI = 0 TT = 1.595E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH47M2LFVWQ Spice Model ---------- .SUBCKT DMTH47M2LFVWQ D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0052 RS 30 3 1E-06 RG 20 2 2.06 CGS 2 3 8.6E-10 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-10 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.1 + TOX = 1E-07 NSUB = 1E+16 KP = 50 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.589E-10 VJ = 0.8 M = 0.8793 .MODEL DSUB D IS = 1.15E-09 N = 1.323 RS = 0.004335 BV = 42.53 + CJO = 1.15E-09 VJ = 0.9 M = 0.3542 XTI = 0 TT = 1.595E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/03/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH47M2LPSW Spice Model ---------- .SUBCKT DMTH47M2LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0038 RS 30 3 0.0001 RG 20 2 1.87 CGS 2 3 9.084E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.1 + TOX = 1E-007 NSUB = 1E+015 KP = 90 U0 = 450 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.2E-010 VJ = 0.8 M = 0.7651 .MODEL DSUB D IS = 2.5E-009 N = 1.384 RS = 0.00118 BV = 42.77 + CJO = 1.1E-009 VJ = 0.9 M = 0.3129 XTI = 0 TT = 2.83E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMTH47M2LPSWQ Spice Model ---------- .SUBCKT DMTH47M2LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0038 RS 30 3 0.0001 RG 20 2 1.87 CGS 2 3 9.084E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.1 + TOX = 1E-007 NSUB = 1E+015 KP = 90 U0 = 450 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.2E-010 VJ = 0.8 M = 0.7651 .MODEL DSUB D IS = 2.5E-009 N = 1.384 RS = 0.00118 BV = 42.77 + CJO = 1.1E-009 VJ = 0.9 M = 0.3129 XTI = 0 TT = 2.83E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMTH47M2SK3 Spice Model ---------- .SUBCKT DMTH47M2SK3 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00465 RS 30 3 0.0001 RG 20 2 2.07 CGS 2 3 9.049E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.52E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.971 + TOX = 1E-007 NSUB = 1E+015 KP = 97 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.024E-010 VJ = 0.8 M = 0.7193 .MODEL DSUB D IS = 2.341E-010 N = 1.249 RS = 0.001743 BV = 42.72 + CJO = 1.24E-009 VJ = 0.9 M = 0.3339 XTI = 0 TT = 1.96E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/04/01 *---------- DMTH47M2SPSW Spice Model ---------- .SUBCKT DMTH47M2SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.0001 RG 20 2 2.07 CGS 2 3 8.9E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.52E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.018 + TOX = 1E-007 NSUB = 1E+016 KP = 130 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.684E-010 VJ = 0.8 M = 0.8583 .MODEL DSUB D IS = 2.35E-009 N = 1.393 RS = 0.001287 BV = 42.72 + CJO = 1.2E-009 VJ = 0.9 M = 0.3384 XTI = 0 TT = 1.96E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/23 *---------- DMTH47M2SPSWQ Spice Model ---------- .SUBCKT DMTH47M2SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.0001 RG 20 2 2.07 CGS 2 3 8.9E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.52E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.018 + TOX = 1E-007 NSUB = 1E+016 KP = 130 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.684E-010 VJ = 0.8 M = 0.8583 .MODEL DSUB D IS = 2.35E-009 N = 1.393 RS = 0.001287 BV = 42.72 + CJO = 1.2E-009 VJ = 0.9 M = 0.3384 XTI = 0 TT = 1.96E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/09/23 *---------- DMTH48M3SFVW Spice Model ---------- .SUBCKT DMTH48M3SFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00526 RS 30 3 0.0001 RG 20 2 2.07 CGS 2 3 8.9E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.37 + TOX = 1E-007 + NSUB = 1E+014 KP = 92 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.3E-010 VJ = 0.9 M = 0.8 .MODEL DSUB D IS = 4E-009 N = 1.47 RS = 0.001498 BV = 44.32 + CJO = 1.476E-009 VJ = 0.9 M = 0.3877 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/05/15 *---------- DMTH48M3SFVWQ Spice Model ---------- .SUBCKT DMTH48M3SFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00526 RS 30 3 0.0001 RG 20 2 2.07 CGS 2 3 8.9E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.37 + TOX = 1E-007 + NSUB = 1E+014 KP = 92 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.3E-010 VJ = 0.9 M = 0.8 .MODEL DSUB D IS = 4E-009 N = 1.47 RS = 0.001498 BV = 44.32 + CJO = 1.476E-009 VJ = 0.9 M = 0.3877 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/05/15 *---------- DMTH4M70SPGW Spice Model ---------- .SUBCKT DMTH4M70SPGW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5E-006 RS 30 3 1E-006 RG 20 2 2.03 CGS 2 3 1.01E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.08E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.7 + TOX = 1E-007 NSUB = 1E+016 KP = 300 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.141E-009 VJ = 0.7994 M = 0.9 .MODEL DSUB D IS = 7.4E-009 N = 1.327 RS = 0.0001961 BV = 42.05 + CJO = 1.37E-008 VJ = 0.9 M = 0.3559 XTI = 0 TT = 5.88E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/09 *---------- DMTH4M70SPGWQ Spice Model ---------- .SUBCKT DMTH4M70SPGWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 5E-006 RS 30 3 1E-006 RG 20 2 2.03 CGS 2 3 1.01E-008 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.08E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.7 + TOX = 1E-007 NSUB = 1E+016 KP = 300 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.141E-009 VJ = 0.7994 M = 0.9 .MODEL DSUB D IS = 7.4E-009 N = 1.327 RS = 0.0001961 BV = 42.05 + CJO = 1.37E-008 VJ = 0.9 M = 0.3559 XTI = 0 TT = 5.88E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2021/12/09 *---------- DMTH4M75LPSW Spice Model ---------- .SUBCKT DMTH4M75LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 2.3 CGS 2 3 9.373E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.038E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.5 + TOX = 1E-007 NSUB = 9.343E+015 KP = 449.8 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.439E-009 VJ = 1.348 M = 0.9 .MODEL DSUB D IS = 2.5E-008 N = 1.347 RS = 0.0006875 BV = 43.26 + CJO = 1.219E-008 VJ = 5 M = 0.6237 XTI = 0 TT = 6.385E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4M75LPSWQ Spice Model ---------- .SUBCKT DMTH4M75LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 2.3 CGS 2 3 9.373E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.038E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.5 + TOX = 1E-007 NSUB = 9.343E+015 KP = 449.8 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.439E-009 VJ = 1.348 M = 0.9 .MODEL DSUB D IS = 2.5E-008 N = 1.347 RS = 0.0006875 BV = 43.26 + CJO = 1.219E-008 VJ = 5 M = 0.6237 XTI = 0 TT = 6.385E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4M75SPSW Spice Model ---------- .SUBCKT DMTH4M75SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.735E-006 RS 30 3 0.0001 RG 20 2 2.34 CGS 2 3 9.36E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.195E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.935 + TOX = 1E-007 NSUB = 1.001E+014 KP = 293.7 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.075E-009 VJ = 0.8 M = 0.4196 .MODEL DSUB D IS = 2.5E-008 N = 1.392 RS = 4.441E-010 BV = 43.65 + CJO = 1.225E-008 VJ = 2 M = 0.4468 XTI = 0 TT = 6.432E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4M75SPSWQ Spice Model ---------- .SUBCKT DMTH4M75SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.735E-006 RS 30 3 0.0001 RG 20 2 2.34 CGS 2 3 9.36E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.195E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.935 + TOX = 1E-007 NSUB = 1.001E+014 KP = 293.7 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.075E-009 VJ = 0.8 M = 0.4196 .MODEL DSUB D IS = 2.5E-008 N = 1.392 RS = 4.441E-010 BV = 43.65 + CJO = 1.225E-008 VJ = 2 M = 0.4468 XTI = 0 TT = 6.432E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4M90LPSW Spice Model ---------- .SUBCKT DMTH4M90LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 2.3 CGS 2 3 9.373E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.038E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.5 + TOX = 1E-007 NSUB = 9.343E+015 KP = 449.8 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.439E-009 VJ = 1.348 M = 0.9 .MODEL DSUB D IS = 2.5E-008 N = 1.347 RS = 0.0006875 BV = 43.26 + CJO = 1.219E-008 VJ = 5 M = 0.6237 XTI = 0 TT = 6.385E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4M90LPSWQ Spice Model ---------- .SUBCKT DMTH4M90LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-006 RS 30 3 1E-006 RG 20 2 2.3 CGS 2 3 9.373E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.038E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.5 + TOX = 1E-007 NSUB = 9.343E+015 KP = 449.8 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.439E-009 VJ = 1.348 M = 0.9 .MODEL DSUB D IS = 2.5E-008 N = 1.347 RS = 0.0006875 BV = 43.26 + CJO = 1.219E-008 VJ = 5 M = 0.6237 XTI = 0 TT = 6.385E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4M90SPSW Spice Model ---------- .SUBCKT DMTH4M90SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.735E-006 RS 30 3 0.0001 RG 20 2 2.34 CGS 2 3 9.36E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.195E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.935 + TOX = 1E-007 NSUB = 1.001E+014 KP = 293.7 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.075E-009 VJ = 0.8 M = 0.4196 .MODEL DSUB D IS = 2.5E-008 N = 1.392 RS = 4.441E-010 BV = 43.65 + CJO = 1.225E-008 VJ = 2 M = 0.4468 XTI = 0 TT = 6.432E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH4M90SPSWQ Spice Model ---------- .SUBCKT DMTH4M90SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 9.735E-006 RS 30 3 0.0001 RG 20 2 2.34 CGS 2 3 9.36E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.195E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.935 + TOX = 1E-007 NSUB = 1.001E+014 KP = 293.7 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.075E-009 VJ = 0.8 M = 0.4196 .MODEL DSUB D IS = 2.5E-008 N = 1.392 RS = 4.441E-010 BV = 43.65 + CJO = 1.225E-008 VJ = 2 M = 0.4468 XTI = 0 TT = 6.432E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/02/06 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH6002LPS Spice Model ---------- .SUBCKT DMTH6002LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.001 RG 20 2 0.68 CGS 2 3 8E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.549 + TOX = 6E-008 NSUB = 1E+016 KP = 212 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.254E-009 VJ = 0.8 M = 0.6192 .MODEL DSUB D IS = 2.249E-010 N = 1.121 RS = 0.0001411 BV = 68 CJO = 4.5E-009 VJ = 0.8 M = 0.6 TT = 3.1E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6002LPS Spice Model v1.0M Last Revised 2016/8/31 *---------- DMTH6002LPSW Spice Model ---------- .SUBCKT DMTH6002LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 0.76 CGS 2 3 8E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 155 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.5E-009 VJ = 0.6389 M = 0.9 .MODEL DSUB D IS = 9.2E-009 N = 1.337 RS = 4.441E-010 BV = 65.57 + CJO = 4.8E-009 VJ = 0.9 M = 0.3051 XTI = 0 TT = 3.35E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/7 *---------- DMTH6002LPSWQ Spice Model ---------- .SUBCKT DMTH6002LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 0.76 CGS 2 3 8E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.2 + TOX = 1E-007 NSUB = 1E+015 KP = 155 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.5E-009 VJ = 0.6389 M = 0.9 .MODEL DSUB D IS = 9.2E-009 N = 1.337 RS = 4.441E-010 BV = 65.57 + CJO = 4.8E-009 VJ = 0.9 M = 0.3051 XTI = 0 TT = 3.35E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/7 *---------- DMTH6004LPS Spice Model ---------- .SUBCKT DMTH6004LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001798 RS 30 3 0.001659 RG 20 2 0.64 CGS 2 3 4.923E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.095 + TOX = 6E-008 NSUB = 1E+016 KP = 287.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.864E-009 VJ = 1 M = 0.7538 .MODEL DSUB D IS = 1.026E-008 N = 1.357 RS = 4.441E-010 BV = 65 CJO = 3E-009 VJ = 0.8 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004LPS Spice Model v1.0 Last Revised 2015/6/5 *---------- DMTH6004LPSQ Spice Model ---------- .SUBCKT DMTH6004LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001798 RS 30 3 0.001659 RG 20 2 0.64 CGS 2 3 4.923E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.095 + TOX = 6E-008 NSUB = 1E+016 KP = 287.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.864E-009 VJ = 1 M = 0.7538 .MODEL DSUB D IS = 1.026E-008 N = 1.357 RS = 4.441E-010 BV = 65 CJO = 3E-009 VJ = 0.8 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004LPSQ Spice Model v1.0 Last Revised 2016/10/28 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH6004LPSWQ Spice Model ---------- .SUBCKT DMTH6004LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001798 RS 30 3 0.001659 RG 20 2 0.64 CGS 2 3 4.923E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.095 + TOX = 6E-008 NSUB = 1E+016 KP = 287.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.864E-009 VJ = 1 M = 0.7538 .MODEL DSUB D IS = 1.026E-008 N = 1.357 RS = 4.441E-010 BV = 65 CJO = 3E-009 VJ = 0.8 M = 0.3 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004LPSWQ Spice Model v1.0 Last Revised 2016/10/28 *---------- DMTH6004SCT Spice Model ---------- .SUBCKT DMTH6004SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SCT Spice Model v1.0M Last Revised 2016/2/18 *---------- DMTH6004SCTB Spice Model ---------- .SUBCKT DMTH6004SCTB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SCTB Spice Model v1.0 Last Revised 2015/10/01 *---------- DMTH6004SCTBQ Spice Model ---------- .SUBCKT DMTH6004SCTBQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SCTBQ Spice Model v1.0 Last Revised 2015/10/01 *---------- DMTH6004SK3 Spice Model ---------- .SUBCKT DMTH6004SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SK3 Spice Model v1.0M Last Revised 2016/2/18 *---------- DMTH6004SK3Q Spice Model ---------- .SUBCKT DMTH6004SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SK3Q Spice Model v1.0M Last Revised 2016/2/18 *---------- DMTH6004SPS Spice Model ---------- .SUBCKT DMTH6004SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SPS Spice Model v1.0 Last Revised 2015/10/01 *---------- DMTH6004SPSQ Spice Model ---------- .SUBCKT DMTH6004SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SPSQ Spice Model v1.0 Last Revised 2015/10/01 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH6004SPS Spice Model ---------- .SUBCKT DMTH6004SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SPS Spice Model v1.0 Last Revised 2015/10/01 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH6004SPSWQ Spice Model ---------- .SUBCKT DMTH6004SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001226 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 4.957E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 + TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 .MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6004SPSWQ Spice Model v1.0 Last Revised 2015/10/01 *---------- DMTH6005LCT Spice Model ---------- .SUBCKT DMTH6005LCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LCT Spice Model v1.0M Last Revised 2016/6/1 *---------- DMTH6005LFG Spice Model ---------- .SUBCKT DMTH6005LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.831E-005 RS 30 3 0.001 RG 20 2 0.7 CGS 2 3 3.129E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.35E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.133 + TOX = 6E-008 NSUB = 1E+016 KP = 101.4 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.169E-010 VJ = 0.8 M = 0.7885 .MODEL DSUB D IS = 1.312E-010 N = 1.121 RS = 4.441E-010 BV = 65.53 + CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 2.04E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LFG Spice Model v1.0J Last Revised 2018/09/12 *---------- DMTH6005LFGQ Spice Model ---------- .SUBCKT DMTH6005LFGQ D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001292 RS 30 3 1E-006 RG 20 2 0.65 CGS 2 3 3.169E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.02E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.501 + TOX = 1E-007 NSUB = 1E+014 KP = 115.1 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.6E-010 VJ = 0.8 M = 0.6456 .MODEL DSUB D IS = 1E-009 N = 1.258 RS = 0.001544 BV = 65.17 + CJO = 1.68E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 2.16E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/06/02 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH6005LK3 Spice Model ---------- .SUBCKT DMTH6005LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LK3 Spice Model v1.0M Last Revised 2016/2/22 *---------- DMTH6005LK3Q Spice Model ---------- .SUBCKT DMTH6005LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LK3Q Spice Model v1.0M Last Revised 2016/2/22 *---------- DMTH6005LPS Spice Model ---------- .SUBCKT DMTH6005LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LPS Spice Model v1.0 Last Revised 2015/8/17 *---------- DMTH6005LPSQ Spice Model ---------- .SUBCKT DMTH6005LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LPSQ Spice Model v1.0 Last Revised 2015/11/10 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH6005LPSWQ Spice Model ---------- .SUBCKT DMTH6005LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003586 RS 30 3 1E-008 RG 20 2 0.66 CGS 2 3 3.195E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.3E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 + TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 .MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6005LPSWQ Spice Model v1.0 Last Revised 2015/11/10 *---------- DMTH6006LPSW Spice Model ---------- .SUBCKT DMTH6006LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002129 RS 30 3 0.0006284 RG 20 2 0.7 CGS 2 3 2.106E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.26 + TOX = 6E-008 NSUB = 1E+016 KP = 75.59 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 1.185E-009 VJ = 0.6993 M = 0.6 .MODEL DSUB D IS = 1.964E-011 N = 1.062 RS = 0.003903 BV = 64.38 CJO = 3.884E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6006LPSW Spice Model v1.0W Last Revised 2019/06/25 *---------- DMTH6006LPSWQ Spice Model ---------- .SUBCKT DMTH6006LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.002129 RS 30 3 0.0006284 RG 20 2 0.7 CGS 2 3 2.106E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.26 + TOX = 6E-008 NSUB = 1E+016 KP = 75.59 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 1.185E-009 VJ = 0.6993 M = 0.6 .MODEL DSUB D IS = 1.964E-011 N = 1.062 RS = 0.003903 BV = 64.38 CJO = 3.884E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6006LPSWQ Spice Model v1.0W Last Revised 2019/06/25 *---------- DMTH6006SPS Spice Model ---------- .SUBCKT DMT6006SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1E-005 RS 30 3 0.001 RG 20 2 0.6 CGS 2 3 1.67E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.9 + TOX = 6E-008 NSUB = 1E+016 KP = 47 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 8.986E-010 VJ = 0.779 M = 0.8 .MODEL DSUB D IS = 8.712E-012 N = 1.064 RS = 0.0002301 BV = 64.64 CJO = 4.736E-009 VJ = 0.8 M = 0.6072 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6006SPS Spice Model v1.0W Last Revised 2019/04/10 *---------- DMTH6009LK3 Spice Model ---------- .SUBCKT DMTH6009LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6009LK3 Spice Model v1.0 Last Revised 2015/7/27 *---------- DMTH6009LK3Q Spice Model ---------- .SUBCKT DMTH6009LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6009LK3Q Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH6009LPS Spice Model ---------- .SUBCKT DMTH6009LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6009LPS Spice Model v1.0M Last Revised 2016/5/4 *---------- DMTH6009LPSQ Spice Model ---------- .SUBCKT DMTH6009LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6009LPSQ Spice Model v1.0M Last Revised 2016/5/4 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH6009LPSWQ Spice Model ---------- .SUBCKT DMTH6009LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006099 RS 30 3 1E-008 RG 20 2 1.71 CGS 2 3 2.016E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 + TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 .MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6009LPSWQ Spice Model v1.0M Last Revised 2016/5/4 *---------- DMTH6009SPS Spice Model ---------- .SUBCKT DMTH6009SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00439 RS 30 3 0.001 RG 20 2 1.6 CGS 2 3 1.57E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.3 TOX = 6E-008 + NSUB = 1E+016 KP = 90.06 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.571E-010 VJ = 0.8 M = 0.6015 .MODEL DSUB D IS = 2.265E-010 N = 1.172 RS = 0.004258 BV = 67.85 + CJO = 2.708E-009 VJ = 0.7999 M = 0.6 TT = 8.6E-009 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6009SPS Spice Model v1.0J Last Revised 2018/05/30 *---------- DMTH6010LK3 Spice Model ---------- .SUBCKT DMTH6010LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LK3 Spice Model v1.0 Last Revised 2015/6/15 *---------- DMTH6010LK3Q Spice Model ---------- .SUBCKT DMTH6010LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LK3Q Spice Model v1.0 Last Revised 2015/11/10 *---------- DMTH6010LPD Spice Model ---------- .SUBCKT DMTH6010LPD 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0054 RS 30 3 1E-06 RG 20 2 0.67 CGS 2 3 2.56E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.205E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.395 + TOX = 1E-07 NSUB = 1E+15 KP = 82 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.35E-10 VJ = 0.8 M = 0.8913 .MODEL DSUB D IS = 4.3E-09 N = 1.374 RS = 0.005078 BV = 66.61 + CJO = 3E-09 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/01/10 *The model can only be used at 25 degC *---------- DMTH6010LPDQ Spice Model ---------- .SUBCKT DMTH6010LPDQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0054 RS 30 3 1E-06 RG 20 2 0.67 CGS 2 3 2.56E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.205E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.395 + TOX = 1E-07 NSUB = 1E+15 KP = 82 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.35E-10 VJ = 0.8 M = 0.8913 .MODEL DSUB D IS = 4.3E-09 N = 1.374 RS = 0.005078 BV = 66.61 + CJO = 3E-09 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/01/10 *The model can only be used at 25 degC *---------- DMTH6010LPDW Spice Model ---------- .SUBCKT DMTH6010LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0054 RS 30 3 1E-06 RG 20 2 0.67 CGS 2 3 2.56E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.205E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.395 + TOX = 1E-07 NSUB = 1E+15 KP = 82 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.35E-10 VJ = 0.8 M = 0.8913 .MODEL DSUB D IS = 4.3E-09 N = 1.374 RS = 0.005078 BV = 66.61 + CJO = 3E-09 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/01/10 *The model can only be used at 25 degC *---------- DMTH6010LPDWQ Spice Model ---------- .SUBCKT DMTH6010LPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0054 RS 30 3 1E-06 RG 20 2 0.67 CGS 2 3 2.56E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.205E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 2.395 + TOX = 1E-07 NSUB = 1E+15 KP = 82 U0 = 600 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6.35E-10 VJ = 0.8 M = 0.8913 .MODEL DSUB D IS = 4.3E-09 N = 1.374 RS = 0.005078 BV = 66.61 + CJO = 3E-09 VJ = 0.9 M = 0.3 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/01/10 *The model can only be used at 25 degC *---------- DMTH6010LPS Spice Model ---------- .SUBCKT DMTH6010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LPS Spice Model v1.0 Last Revised 2015/6/15 *---------- DMTH6010LPSQ Spice Model ---------- .SUBCKT DMTH6010LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LPSQ Spice Model v1.0 Last Revised 2015/11/10 *---------- DMTH6010LPSW Spice Model ---------- .SUBCKT DMTH6010LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001958 RS 30 3 0.0006284 RG 20 2 0.7 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.271 + TOX = 6E-008 NSUB = 1E+016 KP = 65.84 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 9.29E-010 VJ = 0.8 M = 0.7203 .MODEL DSUB D IS = 8.471E-011 N = 1.11 RS = 0.002513 BV = 64.38 CJO = 3.884E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LPSW Spice Model v1.0W Last Revised 2019/06/25 *---------- DMTH6010LPSWQ Spice Model ---------- .SUBCKT DMTH6010LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001958 RS 30 3 0.0006284 RG 20 2 0.7 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.271 + TOX = 6E-008 NSUB = 1E+016 KP = 65.84 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 9.29E-010 VJ = 0.8 M = 0.7203 .MODEL DSUB D IS = 8.471E-011 N = 1.11 RS = 0.002513 BV = 64.38 CJO = 3.884E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010LPSWQ Spice Model v1.0W Last Revised 2019/06/25 *---------- DMTH6010SCT Spice Model ---------- .SUBCKT DMTH6010SCT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004229 RS 30 3 0.001 RG 20 2 0.59 CGS 2 3 2.15E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 + TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 .MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010SCT Spice Model v1.0M Last Revised 2016/4/7 *---------- DMTH6010SK3 Spice Model ---------- .SUBCKT DMTH6010SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 0.39 CGS 2 3 2.821E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.126 + TOX = 6E-008 NSUB = 1E+016 KP = 42.75 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.661E-010 VJ = 0.8 M = 0.7959 .MODEL DSUB D IS = 2.263E-010 N = 1.18 RS = 0.007091 BV = 67 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 1.7E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010SK3 Spice Model v1.0M Last Revised 2018/2/1 *---------- DMTH6010SK3Q Spice Model ---------- .SUBCKT DMTH6010SK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.001 RG 20 2 0.39 CGS 2 3 2.821E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.126 + TOX = 6E-008 NSUB = 1E+016 KP = 42.75 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 5.661E-010 VJ = 0.8 M = 0.7959 .MODEL DSUB D IS = 2.263E-010 N = 1.18 RS = 0.007091 BV = 67 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 1.7E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6010SK3Q Spice Model v1.0M Last Revised 2016/5/30 *---------- DMTH6012LPSW Spice Model ---------- .SUBCKT DMTH6012LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005255 RS 30 3 0.0002219 RG 20 2 1.5 CGS 2 3 7.608E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.866 + TOX = 2.688E-007 NSUB = 1E+016 KP = 40.14 U0 = 951.6 KAPPA = 10 .MODEL DCGD D CJO = 5.905E-010 VJ = 0.6179 M = 0.8 .MODEL DSUB D IS = 9.197E-011 N = 1.132 RS = 0.007737 BV = 66.16 CJO = 1.706E-009 VJ = 0.8 M = 0.6054 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6012LPSW Spice Model v1.0W Last Revised 2019/07/02 *---------- DMTH6012LPSWQ Spice Model ---------- .SUBCKT DMTH6012LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005255 RS 30 3 0.0002219 RG 20 2 1.5 CGS 2 3 7.608E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.866 + TOX = 2.688E-007 NSUB = 1E+016 KP = 40.14 U0 = 951.6 KAPPA = 10 .MODEL DCGD D CJO = 5.905E-010 VJ = 0.6179 M = 0.8 .MODEL DSUB D IS = 9.197E-011 N = 1.132 RS = 0.007737 BV = 66.16 CJO = 1.706E-009 VJ = 0.8 M = 0.6054 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6012LPSWQ Spice Model v1.0W Last Revised 2019/07/02 *---------- DMTH6015LDVW Spice Model ---------- .SUBCKT DMTH6015LDVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0115 RS 30 3 0.0001 RG 20 2 1.51 CGS 2 3 8E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.05 + TOX = 1E-007 NSUB = 1E+015 KP = 53 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.011E-010 VJ = 0.8 M = 0.8585 .MODEL DSUB D IS = 2.4E-009 N = 1.353 RS = 0.007818 BV = 64 + CJO = 4.4E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.135E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMTH6015LDVWQ Spice Model ---------- .SUBCKT DMTH6015LDVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0115 RS 30 3 0.0001 RG 20 2 1.51 CGS 2 3 8E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.05 + TOX = 1E-007 NSUB = 1E+015 KP = 53 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.011E-010 VJ = 0.8 M = 0.8585 .MODEL DSUB D IS = 2.4E-009 N = 1.353 RS = 0.007818 BV = 64 + CJO = 4.4E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.135E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMTH6015LPDW Spice Model ---------- .SUBCKT DMTH6015LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0115 RS 30 3 0.0001 RG 20 2 1.51 CGS 2 3 8E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.05 + TOX = 1E-007 NSUB = 1E+015 KP = 53 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.011E-010 VJ = 0.8 M = 0.8585 .MODEL DSUB D IS = 2.4E-009 N = 1.353 RS = 0.007818 BV = 64 + CJO = 4.4E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.135E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMTH6015LPDWQ Spice Model ---------- .SUBCKT DMTH6015LPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0115 RS 30 3 0.0001 RG 20 2 1.51 CGS 2 3 8E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.05E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.05 + TOX = 1E-007 NSUB = 1E+015 KP = 53 U0 = 500 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.011E-010 VJ = 0.8 M = 0.8585 .MODEL DSUB D IS = 2.4E-009 N = 1.353 RS = 0.007818 BV = 64 + CJO = 4.4E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.135E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2020/12/16 *---------- DMTH6016LFDFWQ Spice Model ---------- .SUBCKT DMTH6016LFDFWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01121 RS 30 3 1E-015 RG 20 2 1.35 CGS 2 3 9.164E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.195 + TOX = 6E-008 NSUB = 1E+016 KP = 51.09 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.236E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 2.294E-010 N = 1.22 RS = 0.01182 BV = 68 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 1E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LFDFWQ Spice Model v1.0 Last Revised 2018/2/6 *---------- DMTH6016LFVW Spice Model ---------- .SUBCKT DMTH6016LFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00853 RS 30 3 0.001 RG 20 2 1.41 CGS 2 3 9.269E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.347 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.885E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 4.925E-009 N = 1.426 RS = 0.008783 BV = 65.67 + CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 1.15E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LFVW Spice Model v1.0J Last Revised 2018/07/13 *---------- DMTH6016LFVWQ Spice Model ---------- .SUBCKT DMTH6016LFVWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00853 RS 30 3 0.001 RG 20 2 1.41 CGS 2 3 9.269E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.45E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.347 + TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.885E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 4.925E-009 N = 1.426 RS = 0.008783 BV = 65.67 + CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 1.15E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LFVWQ Spice Model v1.0J Last Revised 2018/07/13 *---------- DMTH6016LK3 Spice Model ---------- .SUBCKT DMTH6016LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007651 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.458E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 1.98 TOX = 6E-008 NSUB = 1E+016 KP = 50 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.06E-010 VJ = 0.8 M = 0.6647 .MODEL DSUB D IS = 5.658E-010 N = 1.249 RS = 0.006854 BV = 69.44 + CJO = 1.164E-009 VJ = 0.8 M = 0.6 TT = 1.1E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LK3 Spice Model v1.0M Last Revised 2018/04/12 *---------- DMTH6016LK3Q Spice Model ---------- .SUBCKT DMTH6016LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007651 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.458E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 1.98 TOX = 6E-008 NSUB = 1E+016 KP = 50 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 4.06E-010 VJ = 0.8 M = 0.6647 .MODEL DSUB D IS = 5.658E-010 N = 1.249 RS = 0.006854 BV = 69.44 + CJO = 1.164E-009 VJ = 0.8 M = 0.6 TT = 1.1E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LK3Q Spice Model v1.0M Last Revised 2018/04/12 *---------- DMTH6016LPD Spice Model ---------- .SUBCKT DMTH6016LPD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01121 RS 30 3 1E-015 RG 20 2 1.35 CGS 2 3 9.164E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.195 + TOX = 6E-008 NSUB = 1E+016 KP = 51.09 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.236E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 2.294E-010 N = 1.22 RS = 0.01182 BV = 68 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 1E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LPD Spice Model v1.0 Last Revised 2018/2/26 *---------- DMTH6016LPDQ Spice Model ---------- .SUBCKT DMTH6016LPDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01121 RS 30 3 1E-015 RG 20 2 1.35 CGS 2 3 9.164E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.195 + TOX = 6E-008 NSUB = 1E+016 KP = 51.09 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.236E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 2.294E-010 N = 1.22 RS = 0.01182 BV = 68 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 1E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LPDQ Spice Model v1.0 Last Revised 2018/2/26 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH6016LPDWQ Spice Model ---------- .SUBCKT DMTH6016LPDWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01121 RS 30 3 1E-015 RG 20 2 1.35 CGS 2 3 9.164E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.195 + TOX = 6E-008 NSUB = 1E+016 KP = 51.09 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.236E-010 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 2.294E-010 N = 1.22 RS = 0.01182 BV = 68 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 1E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LPDWQ Spice Model v1.0 Last Revised 2018/2/26 *---------- DMTH6016LPS Spice Model ---------- .SUBCKT DMTH6016LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LPS Spice Model v1.0M Last Revised 2016/4/19 *---------- DMTH6016LPSQ Spice Model ---------- .SUBCKT DMTH6016LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LPSQ Spice Model v1.0M Last Revised 2016/7/22 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH6016LPSWQ Spice Model ---------- .SUBCKT DMTH6016LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LPSWQ Spice Model v1.0M Last Revised 2016/7/22 *---------- DMTH6016LSD Spice Model ---------- .SUBCKT DMTH6016LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LSD Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH6016LSDQ Spice Model ---------- .SUBCKT DMTH6016LSDQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006728 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.475E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 + TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 .MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH6016LSDQ Spice Model v1.0 Last Revised 2017/2/3 *---------- DMTH6030LFDFW Spice Model ---------- .SUBCKT DMTH6030LFDFW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01591 RS 30 3 0.0001 RG 20 2 1.46 CGS 2 3 4.385E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.753E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.271 + TOX = 1E-007 NSUB = 1.088E+015 KP = 41.96 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.276E-010 VJ = 1.456 M = 0.9 .MODEL DSUB D IS = 5E-012 N = 1.126 RS = 0.006389 BV = 63.79 + CJO = 3.28E-010 VJ = 2 M = 0.3054 XTI = 0 TT = 1.148E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/07/10 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet.v *---------- DMTH6030LFDFWQ Spice Model ---------- .SUBCKT DMTH6030LFDFWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01591 RS 30 3 0.0001 RG 20 2 1.46 CGS 2 3 4.385E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.753E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.271 + TOX = 1E-007 NSUB = 1.088E+015 KP = 41.96 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.276E-010 VJ = 1.456 M = 0.9 .MODEL DSUB D IS = 5E-012 N = 1.126 RS = 0.006389 BV = 63.79 + CJO = 3.28E-010 VJ = 2 M = 0.3054 XTI = 0 TT = 1.148E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/07/10 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH61M5SPSW Spice Model ---------- .SUBCKT DMTH61M5SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00015 RS 30 3 1E-006 RG 20 2 2.96 CGS 2 3 8.3E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.78E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 6.366E+004 ETA = 0 VTO = 2.944 + TOX = 1.72E-007 NSUB = 1E+015 KP = 137 U0 = 400 KAPPA = 1.37E-007 IS = 0 .MODEL DCGD D CJO = 2.45E-009 VJ = 0.8 M = 0.9 .MODEL DSUB D IS = 7.35E-009 N = 1.309 RS = 4.441E-010 BV = 66.13 + CJO = 5.3E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.52E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1 Last Revised 2022/05/25 *The model can only be used at 25 degC *---------- DMTH61M5SPSWQ Spice Model ---------- .SUBCKT DMTH61M5SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.96 CGS 2 3 8.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.16 + TOX = 1E-007 NSUB = 1E+015 KP = 170 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.571E-009 VJ = 0.8 M = 0.7717 .MODEL DSUB D IS = 2.995E-011 N = 1.037 RS = 0.001131 BV = 66.13 + CJO = 5E-009 VJ = 0.9 M = 0.3065 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/02/11 *---------- DMTH61M8LPS Spice Model ---------- .SUBCKT DMTH61M8LPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 3.16 CGS 2 3 8.35E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.35E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.6 + TOX = 1E-007 + NSUB = 1E+014 KP = 125 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.891E-009 VJ = 0.8 M = 0.8518 .MODEL DSUB D IS = 3E-009 N = 1.247 RS = 4.441E-010 BV = 64.05 + CJO = 4.823E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.2E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1J Last Revised 2020/03/08 *---------- DMTH61M8LPSQ Spice Model ---------- .SUBCKT DMTH61M8LPSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 3.16 CGS 2 3 8.35E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.35E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.6 + TOX = 1E-007 + NSUB = 1E+014 KP = 125 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.891E-009 VJ = 0.8 M = 0.8518 .MODEL DSUB D IS = 3E-009 N = 1.247 RS = 4.441E-010 BV = 64.05 + CJO = 4.823E-009 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.2E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.1J Last Revised 2020/03/08 *---------- DMTH61M8SPS Spice Model ---------- .SUBCKT DMTH61M8SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.96 CGS 2 3 8.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.16 + TOX = 1E-007 NSUB = 1E+015 KP = 170 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.571E-009 VJ = 0.8 M = 0.7717 .MODEL DSUB D IS = 2.995E-011 N = 1.037 RS = 0.001131 BV = 66.13 + CJO = 5E-009 VJ = 0.9 M = 0.3065 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/02/11 *---------- DMTH61M8SPSQ Spice Model ---------- .SUBCKT DMTH61M8SPSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.96 CGS 2 3 8.2E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.16 + TOX = 1E-007 NSUB = 1E+015 KP = 170 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.571E-009 VJ = 0.8 M = 0.7717 .MODEL DSUB D IS = 2.995E-011 N = 1.037 RS = 0.001131 BV = 66.13 + CJO = 5E-009 VJ = 0.9 M = 0.3065 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/02/11 *---------- DMTH62M7SPSW Spice Model ---------- .SUBCKT DMTH62M7SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00075 RS 30 3 1E-06 RG 20 2 0.81 CGS 2 3 4.9E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 3.5 + TOX = 1E-07 NSUB = 1E+15 KP = 111 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.5E-10 VJ = 0.7661 M = 0.9 .MODEL DSUB D IS = 8.761E-09 N = 1.432 RS = 0.0001125 BV = 63.36 + CJO = 3.3E-09 VJ = 0.9 M = 0.306 XTI = 0 TT = 2.67E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/10/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH62M7SPSWQ Spice Model ---------- .SUBCKT DMTH62M7SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.00075 RS 30 3 1E-06 RG 20 2 0.81 CGS 2 3 4.9E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 3.5 + TOX = 1E-07 NSUB = 1E+15 KP = 111 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.5E-10 VJ = 0.7661 M = 0.9 .MODEL DSUB D IS = 8.761E-09 N = 1.432 RS = 0.0001125 BV = 63.36 + CJO = 3.3E-09 VJ = 0.9 M = 0.306 XTI = 0 TT = 2.67E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/10/14 "*The model is an approximation of the device, and it may not show the true device performance under all conditions." "*The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet." *---------- DMTH62M8LPS Spice Model ---------- .SUBCKT DMTH62M8LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0105 RS 30 3 0.001 RG 20 2 0.64 CGS 2 3 2.606E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.625E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.978 + TOX = 6E-008 NSUB = 1E+016 KP = 115 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.007E-009 VJ = 0.3394 M = 0.559 .MODEL DSUB D IS = 1.182E-008 N = 1.413 RS = 0.001564 BV = 66.4 + CJO = 2.823E-010 VJ = 0.3208 M = 0.6515 TT = 2.485E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH62M8LPS Spice Model v1.0J Last Revised 2018/09/20 *---------- DMTH62M8SPS Spice Model ---------- .SUBCKT DMTH62M8SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 4E-005 RS 30 3 0.001 RG 20 2 0.66 CGS 2 3 5.008E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.91E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.3 + TOX = 6E-008 NSUB = 1E+016 KP = 115 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.084E-009 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.292E-009 N = 1.225 RS = 4.441E-010 BV = 64.97 + CJO = 4E-009 VJ = 0.8 M = 0.6 TT = 2.525E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH62M8SPS Spice Model v1.0J Last Revised 2018/09/20 *---------- DMTH63M5LFG Spice Model ---------- .SUBCKT DMTH63M5LFG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001437 RS 30 3 0.0001 RG 20 2 0.74 CGS 2 3 2.293E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.125E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.242 + TOX = 1E-007 NSUB = 1E+014 KP = 140.7 U0 = 304.6 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.066E-009 VJ = 2 M = 0.9 .MODEL DSUB D IS = 2.992E-009 N = 1.314 RS = 0.002161 BV = 62.53 + CJO = 1.982E-009 VJ = 2 M = 0.3 XTI = 0 TT = 2.231E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH63M5LFGQ Spice Model ---------- .SUBCKT DMTH63M5LFGQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001437 RS 30 3 0.0001 RG 20 2 0.74 CGS 2 3 2.293E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.125E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.242 + TOX = 1E-007 NSUB = 1E+014 KP = 140.7 U0 = 304.6 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.066E-009 VJ = 2 M = 0.9 .MODEL DSUB D IS = 2.992E-009 N = 1.314 RS = 0.002161 BV = 62.53 + CJO = 1.982E-009 VJ = 2 M = 0.3 XTI = 0 TT = 2.231E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH63M6LPSW Spice Model ---------- .SUBCKT DMTH63M6LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 1E-006 RG 20 2 1.44 CGS 2 3 2.424E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.57E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.45 + TOX = 1E-007 NSUB = 1E+014 KP = 130 U0 = 100.1 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.24E-009 VJ = 0.8 M = 0.8999 .MODEL DSUB D IS = 1.05E-009 N = 1.259 RS = 0.001231 BV = 63.36 + CJO = 1.9E-009 VJ = 0.9 M = 0.3314 XTI = 0 TT = 2.18E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/10/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH63M6LPSWQ Spice Model ---------- .SUBCKT DMTH63M6LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : J M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0015 RS 30 3 1E-006 RG 20 2 1.44 CGS 2 3 2.424E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.57E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.45 + TOX = 1E-007 NSUB = 1E+014 KP = 130 U0 = 100.1 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.24E-009 VJ = 0.8 M = 0.8999 .MODEL DSUB D IS = 1.05E-009 N = 1.259 RS = 0.001231 BV = 63.36 + CJO = 1.9E-009 VJ = 0.9 M = 0.3314 XTI = 0 TT = 2.18E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2022/10/14 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH69M8LFVW Spice Model ---------- .SUBCKT DMTH69M8LFVW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 2.007E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.819 + TOX = 6E-008 NSUB = 1E+016 KP = 80.57 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 4.981E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.265E-010 N = 1.111 RS = 0.006417 BV = 65.15 CJO = 2.103E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH69M8LFVW Spice Model v1.0W Last Revised 2019/06/14 *---------- DMTH69M8LFVWQ Spice Model ---------- .SUBCKT DMTH69M8LFVWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 1.71 CGS 2 3 2.007E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.819 + TOX = 6E-008 NSUB = 1E+016 KP = 80.57 U0 = 520.6 KAPPA = 10 .MODEL DCGD D CJO = 4.981E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.265E-010 N = 1.111 RS = 0.006417 BV = 65.15 CJO = 2.103E-009 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH69M8LFVWQ Spice Model v1.0W Last Revised 2019/06/14 *---------- DMTH69M9LPDW Spice Model ---------- .SUBCKT DMTH69M9LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007816 RS 30 3 0.0001 RG 20 2 1.69 CGS 2 3 2.154E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.874 + TOX = 1E-007 NSUB = 1E+014 KP = 97.78 U0 = 713.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.51E-010 VJ = 1.884 M = 0.9 .MODEL DSUB D IS = 3.796E-010 N = 1.184 RS = 0.009701 BV = 64.43 + CJO = 9.489E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 2.12E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/01/03 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH69M9LPDWQ Spice Model ---------- .SUBCKT DMTH69M9LPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007816 RS 30 3 0.0001 RG 20 2 1.69 CGS 2 3 2.154E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 1.874 + TOX = 1E-007 NSUB = 1E+014 KP = 97.78 U0 = 713.2 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 4.51E-010 VJ = 1.884 M = 0.9 .MODEL DSUB D IS = 3.796E-010 N = 1.184 RS = 0.009701 BV = 64.43 + CJO = 9.489E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 2.12E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/01/03 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH8001STLW Spice Model ---------- .SUBCKT DMTH8001STLW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.63 CGS 2 3 9E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.97E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.6 + TOX = 1E-007 + NSUB = 1E+015 KP = 150 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.3E-009 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 1E-008 N = 1.36 RS = 4E-010 BV = 93.9 + CJO = 7.2E-009 VJ = 0.9 M = 0.38 XTI = 0 TT = 4.695E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8001STLW Spice Model v1.1 Last Revised 2021/03/17 *---------- DMTH8001STLWQ Spice Model ---------- .SUBCKT DMTH8001STLWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.63 CGS 2 3 9E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.97E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.6 + TOX = 1E-007 + NSUB = 1E+015 KP = 150 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.3E-009 VJ = 0.5 M = 0.9 .MODEL DSUB D IS = 1E-008 N = 1.36 RS = 4E-010 BV = 93.9 + CJO = 7.2E-009 VJ = 0.9 M = 0.38 XTI = 0 TT = 4.695E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8001STLWQ Spice Model v1.1 Last Revised 2021/03/17 *---------- DMTH8003SPS Spice Model ---------- .SUBCKT DMTH8003SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001913 RS 30 3 0.001 RG 20 2 0.85 CGS 2 3 9.031E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.789 + TOX = 6E-008 NSUB = 1E+016 KP = 487.1 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.6E-009 VJ = 0.8 M = 0.7845 .MODEL DSUB D IS = 2.221E-010 N = 1.178 RS = 4.441E-010 BV = 90 CJO = 3.5E-009 VJ = 0.8 M = 0.6 TT = 2.8E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8003SPS Spice Model v1.0 Last Revised 2017/10/16 *---------- DMTH8003SPSW Spice Model ---------- .SUBCKT DMTH8003SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001612 RS 30 3 0.0001 RG 20 2 0.82 CGS 2 3 9.029E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.19E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.794 TOX = 1E-007 + NSUB = 6.338E+015 KP = 219 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.125E-009 VJ = 0.6991 M = 0.9 .MODEL DSUB D IS = 4.299E-009 N = 1.354 RS = 0.0005152 BV = 85.9 + CJO = 2.787E-009 VJ = 0.6 M = 0.4182 XTI = 0 TT = 2.901E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH8003SPSWQ Spice Model ---------- .SUBCKT DMTH8003SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001612 RS 30 3 0.0001 RG 20 2 0.82 CGS 2 3 9.029E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.19E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.794 TOX = 1E-007 + NSUB = 6.338E+015 KP = 219 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.125E-009 VJ = 0.6991 M = 0.9 .MODEL DSUB D IS = 4.299E-009 N = 1.354 RS = 0.0005152 BV = 85.9 + CJO = 2.787E-009 VJ = 0.6 M = 0.4182 XTI = 0 TT = 2.901E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/06/18 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH8003STLW Spice Model ---------- .SUBCKT DMTH8003STLW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.14 CGS 2 3 8.1E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.87E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.85 + TOX = 1E-007 + NSUB = 1E+015 KP = 136 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.2E-009 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 1E-008 N = 1.399 RS = 4E-010 BV = 93.8 + CJO = 6.7E-009 VJ = 0.9 M = 0.41 XTI = 0 TT = 4.961E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8003STLW Spice Model v1.1 Last Revised 2022/10/31 *---------- DMTH8003STLWQ Spice Model ---------- .SUBCKT DMTH8003STLWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.14 CGS 2 3 8.1E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.87E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.85 + TOX = 1E-007 + NSUB = 1E+015 KP = 136 U0 = 400 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 2.2E-009 VJ = 0.8 M = 0.8 .MODEL DSUB D IS = 1E-008 N = 1.399 RS = 4E-010 BV = 93.8 + CJO = 6.7E-009 VJ = 0.9 M = 0.41 XTI = 0 TT = 4.961E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8003STLWQ Spice Model v1.1 Last Revised 2022/10/31 *---------- DMTH8004LPS Spice Model ---------- .SUBCKT DMTH8004LPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0014 RS 30 3 0.0001 RG 20 2 2.1 CGS 2 3 4.9E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.36E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.297 + TOX = 1E-007 NSUB = 5E+014 KP = 125 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.317E-009 VJ = 0.8 M = 0.7 .MODEL DSUB D IS = 6.477E-011 N = 1.093 RS = 0.0006843 BV = 87.78 + CJO = 2.9E-009 VJ = 0.9 M = 0.3 TT = 4.55E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/10/29 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH8004LPSW Spice Model ---------- .SUBCKT DMTH8004LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0014 RS 30 3 0.0001 RG 20 2 2.1 CGS 2 3 4.9E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.36E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.297 + TOX = 1E-007 NSUB = 5E+014 KP = 125 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.317E-009 VJ = 0.8 M = 0.7 .MODEL DSUB D IS = 6.477E-011 N = 1.093 RS = 0.0006843 BV = 87.78 + CJO = 2.9E-009 VJ = 0.9 M = 0.3 TT = 4.55E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2024/07/29 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH8004LPSWQ Spice Model ---------- .SUBCKT DMTH8004LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0014 RS 30 3 0.0001 RG 20 2 2.1 CGS 2 3 4.9E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.36E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.297 + TOX = 1E-007 NSUB = 5E+014 KP = 125 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.317E-009 VJ = 0.8 M = 0.7 .MODEL DSUB D IS = 6.477E-011 N = 1.093 RS = 0.0006843 BV = 87.78 + CJO = 2.9E-009 VJ = 0.9 M = 0.3 TT = 4.55E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2024/07/29 *---------- DMTH8008LFG Spice Model ---------- .SUBCKT DMTH8008LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0024 RS 30 3 0.001 RG 20 2 1.98 CGS 2 3 1.953E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.583E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.24E+005 ETA = 0.001 VTO = 1.978 + TOX = 6E-008 NSUB = 1E+016 KP = 383.58 U0 = 400 KAPPA = 12 .MODEL DCGD D CJO = 4.55E-010 VJ = 0.74 M = 0.78 .MODEL DSUB D IS = 2.47E-010 N = 1.17 RS = 0.00173 BV = 96 CJO = 7.42E-009 VJ = 0.8 M = 0.689 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8008LFG Spice Model v1.0M Last Revised 2019/9/ *---------- DMTH8008LFGQ Spice Model ---------- .SUBCKT DMTH8008LFGQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0024 RS 30 3 0.001 RG 20 2 1.98 CGS 2 3 1.953E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.583E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.24E+005 ETA = 0.001 VTO = 1.978 + TOX = 6E-008 NSUB = 1E+016 KP = 383.58 U0 = 400 KAPPA = 12 .MODEL DCGD D CJO = 4.55E-010 VJ = 0.74 M = 0.78 .MODEL DSUB D IS = 2.47E-010 N = 1.17 RS = 0.00173 BV = 96 CJO = 7.42E-009 VJ = 0.8 M = 0.689 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8008LFGQ Spice Model v1.0M Last Revised 2019/9/18 *---------- DMTH8008LPS Spice Model ---------- .SUBCKT DMTH8008LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0024 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.032E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.152E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.24E+005 ETA = 0.001 VTO = 1.685 + TOX = 6E-008 NSUB = 1E+016 KP = 339.09 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.57E-010 VJ = 0.7407 M = 0.8 .MODEL DSUB D IS = 2.328E-010 N = 1.165 RS = 0.001885 BV = 95 CJO = 8.38E-009 VJ = 0.8 M = 0.6922 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8008LPS Spice Model v1.0M Last Revised 2019/1/9 *---------- DMTH8008LPSQ Spice Model ---------- .SUBCKT DMTH8008LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0024 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.032E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.152E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.24E+005 ETA = 0.001 VTO = 1.685 + TOX = 6E-008 NSUB = 1E+016 KP = 339.09 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.57E-010 VJ = 0.7407 M = 0.8 .MODEL DSUB D IS = 2.328E-010 N = 1.165 RS = 0.001885 BV = 95 CJO = 8.38E-009 VJ = 0.8 M = 0.6922 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8008LPSQ Spice Model v1.0M Last Revised 2019/1/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH8008LPSWQ Spice Model ---------- .SUBCKT DMTH8008LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0024 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 2.032E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.152E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.24E+005 ETA = 0.001 VTO = 1.685 + TOX = 6E-008 NSUB = 1E+016 KP = 339.09 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 7.57E-010 VJ = 0.7407 M = 0.8 .MODEL DSUB D IS = 2.328E-010 N = 1.165 RS = 0.001885 BV = 95 CJO = 8.38E-009 VJ = 0.8 M = 0.6922 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8008LPSWQ Spice Model v1.0M Last Revised 2019/1/9 *---------- DMTH8008SFG Spice Model ---------- .SUBCKT DMTH8008SFG 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0008 RS 30 3 0.0001 RG 20 2 1.84 CGS 2 3 1.903E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.4 + TOX = 1E-007 NSUB = 1E+015 KP = 55 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.428E-010 VJ = 0.8 M = 0.5358 .MODEL DSUB D IS = 1.926E-010 N = 1.186 RS = 0.0006107 BV = 94.8 + CJO = 1.5E-009 VJ = 0.9 M = 0.3 TT = 2.545E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/01/17 *---------- DMTH8008SFGQ Spice Model ---------- .SUBCKT DMTH8008SFGQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0008 RS 30 3 0.0001 RG 20 2 1.84 CGS 2 3 1.903E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.4 + TOX = 1E-007 NSUB = 1E+015 KP = 55 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.428E-010 VJ = 0.8 M = 0.5358 .MODEL DSUB D IS = 1.926E-010 N = 1.186 RS = 0.0006107 BV = 94.8 + CJO = 1.5E-009 VJ = 0.9 M = 0.3 TT = 2.545E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/01/17 *---------- DMTH8008SPS Spice Model ---------- .SUBCKT DMTH8008SPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00326 RS 30 3 0.001 RG 20 2 1.72 CGS 2 3 1.86E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO =2.45 + TOX = 6E-008 NSUB = 1E+016 KP = 473.9 U0 = 400 KAPPA = 8.3 .MODEL DCGD D CJO = 0.733E-009 VJ = 0.8 M = 0.707 .MODEL DSUB D IS = 2.45E-010 N = 1.069 RS = 4.61E-010 BV = 94.6 CJO = 1.805E-009 VJ = 0.769 M = 0.59 TT = 4.9E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8008SPS Spice Model v1.0 Last Revised 2019/2/11 *---------- DMTH8008SPSQ Spice Model ---------- .SUBCKT DMTH8008SPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00326 RS 30 3 0.001 RG 20 2 1.72 CGS 2 3 1.86E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO =2.45 + TOX = 6E-008 NSUB = 1E+016 KP = 473.9 U0 = 400 KAPPA = 8.3 .MODEL DCGD D CJO = 0.733E-009 VJ = 0.8 M = 0.707 .MODEL DSUB D IS = 2.45E-010 N = 1.069 RS = 4.61E-010 BV = 94.6 CJO = 1.805E-009 VJ = 0.769 M = 0.59 TT = 4.9E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8008SPSQ Spice Model v1.0 Last Revised 2019/2/11 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH8008SPSWQ Spice Model ---------- .SUBCKT DMTH8008SPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00326 RS 30 3 0.001 RG 20 2 1.72 CGS 2 3 1.86E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.01E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO =2.45 + TOX = 6E-008 NSUB = 1E+016 KP = 473.9 U0 = 400 KAPPA = 8.3 .MODEL DCGD D CJO = 0.733E-009 VJ = 0.8 M = 0.707 .MODEL DSUB D IS = 2.45E-010 N = 1.069 RS = 4.61E-010 BV = 94.6 CJO = 1.805E-009 VJ = 0.769 M = 0.59 TT = 4.9E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8008SPSWQ Spice Model v1.0 Last Revised 2019/2/11 *---------- DMTH8012LK3 Spice Model ---------- .SUBCKT DMTH8012LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01093 RS 30 3 0.001 RG 20 2 0.68 CGS 2 3 2.125E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.22 + TOX = 6E-008 NSUB = 1E+016 KP = 83.45 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.852E-010 VJ = 0.9 M = 0.5564 .MODEL DSUB D IS = 2.326E-010 N = 1.19 RS = 0.00327 BV = 90 CJO = 1.422E-009 VJ = 0.8 M = 0.3738 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8012LK3 Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH8012LK3Q Spice Model ---------- .SUBCKT DMTH8012LK3Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01093 RS 30 3 0.001 RG 20 2 0.68 CGS 2 3 2.125E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.22 + TOX = 6E-008 NSUB = 1E+016 KP = 83.45 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.852E-010 VJ = 0.9 M = 0.5564 .MODEL DSUB D IS = 2.326E-010 N = 1.19 RS = 0.00327 BV = 90 CJO = 1.422E-009 VJ = 0.8 M = 0.3738 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8012LK3Q Spice Model v1.0 Last Revised 2015/11/13 *---------- DMTH8012LPS Spice Model ---------- .SUBCKT DMTH8012LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01093 RS 30 3 0.001 RG 20 2 0.68 CGS 2 3 2.125E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.22 + TOX = 6E-008 NSUB = 1E+016 KP = 83.45 U0 = 400 KAPPA = 4.441E-010 .MODEL DCGD D CJO = 2.852E-010 VJ = 0.9 M = 0.5564 .MODEL DSUB D IS = 2.326E-010 N = 1.19 RS = 0.00327 BV = 90 CJO = 1.422E-009 VJ = 0.8 M = 0.3738 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8012LPS Spice Model v1.0 Last Revised 2018/2/1 *---------- DMTH8012LPSQ Spice Model ---------- .SUBCKT DMT8012LPSQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008517 RS 30 3 0.001 RG 20 2 0.44 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 + TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 .MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8012LPSQ Spice Model v1.0M Last Revised 2016/3/21 *---------- DMTH8012LPSW Spice Model ---------- .SUBCKT DMTH8012LPSW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01004 RS 30 3 0.001 RG 20 2 0.68 CGS 2 3 2.141E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.24 + TOX = 6E-008 NSUB = 1E+016 KP = 128.7 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.73E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.193E-010 N = 1.123 RS = 0.004612 BV = 88 CJO = 1.2E-009 VJ = 0.8 M = 0.6 TT=1.5E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8012LPSW Spice Model v1.0 Last Revised 2017/6/9 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH8012LPSWQ Spice Model ---------- .SUBCKT DMT8012LPSWQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008517 RS 30 3 0.001 RG 20 2 0.44 CGS 2 3 2.128E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.2E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 + TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 .MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT8012LPSWQ Spice Model v1.0M Last Revised 2016/3/21 *---------- DMTH8028LFVW Spice Model ---------- .SUBCKT DMTH8028LFVW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01329 RS 30 3 0.0001 RG 20 2 1.07 CGS 2 3 6.15E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.583 + TOX = 1E-007 + NSUB = 1E+015 KP = 41 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.6E-010 VJ = 0.8 M = 0.8501 .MODEL DSUB D IS = 5.9E-009 N = 1.496 RS = 0.004 BV = 87.9 + CJO = 4.5E-010 VJ = 0.9 M = 0.4 XTI = 0 TT = 1.423E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8028LFVW Spice Model v1.1 Last Revised 2021/07/15 *---------- DMTH8028LFVWQ Spice Model ---------- .SUBCKT DMTH8028LFVWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01329 RS 30 3 0.0001 RG 20 2 1.07 CGS 2 3 6.15E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.583 + TOX = 1E-007 + NSUB = 1E+015 KP = 41 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.6E-010 VJ = 0.8 M = 0.8501 .MODEL DSUB D IS = 5.9E-009 N = 1.496 RS = 0.004 BV = 87.9 + CJO = 4.5E-010 VJ = 0.9 M = 0.4 XTI = 0 TT = 1.423E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8028LFVWQ Spice Model v1.1 Last Revised 2021/07/15 *---------- DMTH8028LPSW Spice Model ---------- .SUBCKT DMTH8028LPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0155 RS 30 3 0.0001 RG 20 2 1.35 CGS 2 3 6.245E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.27E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.78 + TOX = 1E-007 + NSUB = 1E+015 KP = 42 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.3E-010 VJ = 0.8 M = 0.5386 .MODEL DSUB D IS = 5.9E-009 N = 1.532 RS = 0.00289 BV = 92.2 + CJO = 3.954E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.421E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8028LPSW Spice Model v1.1 Last Revised 2020/10/29 *---------- DMTH8028LPSWQ Spice Model ---------- .SUBCKT DMTH8028LPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0155 RS 30 3 0.0001 RG 20 2 1.35 CGS 2 3 6.245E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.27E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.78 + TOX = 1E-007 + NSUB = 1E+015 KP = 42 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.3E-010 VJ = 0.8 M = 0.5386 .MODEL DSUB D IS = 5.9E-009 N = 1.532 RS = 0.00289 BV = 92.2 + CJO = 3.954E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.421E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8028LPSWQ Spice Model v1.1 Last Revised 2020/10/29 *---------- DMTH8030LFDFW Spice Model ---------- .SUBCKT DMTH8030LFDFW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.016 RS 30 3 0.0001 RG 20 2 1.39 CGS 2 3 6.138E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.14E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.486 + TOX = 1E-007 NSUB = 1E+016 KP = 50.64 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.631E-010 VJ = 0.8 M = 0.6489 .MODEL DSUB D IS = 2.786E-009 N = 1.432 RS = 0.005467 BV = 88 + CJO = 3.988E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.274E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/07/31 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH8030LFDFWQ Spice Model ---------- .SUBCKT DMTH8030LFDFWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.016 RS 30 3 0.0001 RG 20 2 1.39 CGS 2 3 6.138E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.14E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.486 + TOX = 1E-007 NSUB = 1E+016 KP = 50.64 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.631E-010 VJ = 0.8 M = 0.6489 .MODEL DSUB D IS = 2.786E-009 N = 1.432 RS = 0.005467 BV = 88 + CJO = 3.988E-010 VJ = 0.9 M = 0.3 XTI = 0 TT = 1.274E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/07/31 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH8030LPDW Spice Model ---------- .SUBCKT DMTH8030LPDW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0172 RS 30 3 0.0001 RG 20 2 1.39 CGS 2 3 6.19E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.47E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.559 + TOX = 1E-007 + NSUB = 1E+015 KP = 37.12 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.65E-010 VJ = 0.8 M = 0.87 .MODEL DSUB D IS = 6.2E-009 N = 1.514 RS = 0.0059 BV = 93.5 + CJO = 4.1E-010 VJ = 0.9 M = 0.36 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8030LPDW Spice Model v1.1 Last Revised 2020/12/02 *---------- DMTH8030LPDWQ Spice Model ---------- .SUBCKT DMTH8030LPDWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : A M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0172 RS 30 3 0.0001 RG 20 2 1.39 CGS 2 3 6.19E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.47E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.559 + TOX = 1E-007 + NSUB = 1E+015 KP = 37.12 U0 = 550 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.65E-010 VJ = 0.8 M = 0.87 .MODEL DSUB D IS = 6.2E-009 N = 1.514 RS = 0.0059 BV = 93.5 + CJO = 4.1E-010 VJ = 0.9 M = 0.36 XTI = 0 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMTH8030LPDWQ Spice Model v1.1 Last Revised 2020/12/02 *---------- DMTH82M6SPSW Spice Model ---------- .SUBCKT DMTH82M6SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.17 CGS 2 3 5.352E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.267E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.027 TOX = 1E-07 + NSUB = 1.923E+15 KP = 108.3 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.424E-09 VJ = 0.8 M = 0.6108 .MODEL DSUB D IS = 3.55E-09 N = 1.333 RS = 6.128E-05 BV = 94 + CJO = 4.025E-09 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.593E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/10/09 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH82M6SPSWQ Spice Model ---------- .SUBCKT DMTH82M6SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.17 CGS 2 3 5.352E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.267E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.027 TOX = 1E-07 + NSUB = 1.923E+15 KP = 108.3 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.424E-09 VJ = 0.8 M = 0.6108 .MODEL DSUB D IS = 3.55E-09 N = 1.333 RS = 6.128E-05 BV = 94 + CJO = 4.025E-09 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.593E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/10/09 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH83M2SPSW Spice Model ---------- .SUBCKT DMTH83M2SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.17 CGS 2 3 5.352E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.267E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.027 TOX = 1E-07 + NSUB = 1.923E+15 KP = 108.3 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.424E-09 VJ = 0.8 M = 0.6108 .MODEL DSUB D IS = 3.55E-09 N = 1.333 RS = 6.128E-05 BV = 94 + CJO = 4.025E-09 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.593E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/09/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH83M2SPSWQ Spice Model ---------- .SUBCKT DMTH83M2SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 1.17 CGS 2 3 5.352E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.267E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.027 TOX = 1E-07 + NSUB = 1.923E+15 KP = 108.3 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.424E-09 VJ = 0.8 M = 0.6108 .MODEL DSUB D IS = 3.55E-09 N = 1.333 RS = 6.128E-05 BV = 94 + CJO = 4.025E-09 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.593E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/09/13 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMTH84M1SPS Spice Model ---------- .SUBCKT DMTH84M1SPS 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.18 CGS 2 3 4.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.59E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.44 + TOX = 1E-007 NSUB = 5E+014 KP = 70 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.5E-010 VJ = 0.8 M = 0.65 .MODEL DSUB D IS = 5.798E-011 N = 1.107 RS = 0.0009639 BV = 95.4 + CJO = 3.5E-009 VJ = 0.9 M = 0.4 TT = 2.81E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/10/29 *---------- DMTH84M1SPSQ Spice Model ---------- .SUBCKT DMTH84M1SPSQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.18 CGS 2 3 4.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.59E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.44 + TOX = 1E-007 NSUB = 5E+014 KP = 70 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.5E-010 VJ = 0.8 M = 0.65 .MODEL DSUB D IS = 5.798E-011 N = 1.107 RS = 0.0009639 BV = 95.4 + CJO = 3.5E-009 VJ = 0.9 M = 0.4 TT = 2.81E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/10/29 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH84M1SPSW Spice Model ---------- .SUBCKT DMTH84M1SPSW 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.18 CGS 2 3 4.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.59E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.44 + TOX = 1E-007 NSUB = 5E+014 KP = 70 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.5E-010 VJ = 0.8 M = 0.65 .MODEL DSUB D IS = 5.798E-011 N = 1.107 RS = 0.0009639 BV = 95.4 + CJO = 3.5E-009 VJ = 0.9 M = 0.4 TT = 2.81E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2024/07/29 * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMTH84M1SPSWQ Spice Model ---------- .SUBCKT DMTH84M1SPSWQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0001 RS 30 3 0.0001 RG 20 2 2.18 CGS 2 3 4.13E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.59E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 3.44 + TOX = 1E-007 NSUB = 5E+014 KP = 70 U0 = 750 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 8.5E-010 VJ = 0.8 M = 0.65 .MODEL DSUB D IS = 5.798E-011 N = 1.107 RS = 0.0009639 BV = 95.4 + CJO = 3.5E-009 VJ = 0.9 M = 0.4 TT = 2.81E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2024/07/29 *---------- DMWS120H100SM4 Spice Model ---------- .SUBCKT DMWS120H100SM4 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : JAY M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.055 RS 30 3 1E-06 RG 20 2 8.26 CGS 2 3 1.53E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.323E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.8 TOX = 1E-07 NSUB = 8.792E+15 KP = 4.5 U0 = 100 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 6E-10 VJ = 0.6 M = 0.6913 .MODEL DSUB D IS = 3E-07 N = 8.6 RS = 0.03 BV = 1377 CJO = 1.5E-09 VJ = 0.9 M = 0.5 XTI = 0 TT = 4.94E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2023/01/10 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMWSH120H28SM4 Spice Model ---------- .SUBCKT DMWSH120H28SM4 D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : JAY M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0159 RS 30 3 1E-06 RG 20 2 1.24 CGS 2 3 3.942E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.9 TOX = 1E-07 NSUB = 2.3E+15 KP = 18.5 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.015E-10 VJ = 0.5 M = 0.5177 .MODEL DSUB D IS = 1.89E-07 N = 7.045 RS = 0.01044 BV = 1415 CJO = 7.583E-09 VJ = 0.6 M = 0.5107 XTI = 0 TT = 1.69E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2023/06/16 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMWSH120H28SM4Q Spice Model ---------- .SUBCKT DMWSH120H28SM4Q D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : JAY M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0159 RS 30 3 1E-06 RG 20 2 1.24 CGS 2 3 3.942E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.9 TOX = 1E-07 NSUB = 2.3E+15 KP = 18.5 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 5.015E-10 VJ = 0.5 M = 0.5177 .MODEL DSUB D IS = 1.89E-07 N = 7.045 RS = 0.01044 BV = 1415 CJO = 7.583E-09 VJ = 0.6 M = 0.5107 XTI = 0 TT = 1.69E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2023/06/16 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMWSH120H43SM3 Spice Model ---------- .SUBCKT DMWSH120H43SM3 D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : JAY M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0278 RS 30 3 1E-06 RG 20 2 1.37 CGS 2 3 2.183E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.56E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 5.1 TOX = 1E-07 NSUB = 3E+15 KP = 12 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.792E-10 VJ = 0.505 M = 0.4202 .MODEL DSUB D IS = 1.2E-07 N = 7.073 RS = 0.018 BV = 1743 CJO = 4.461E-09 VJ = 0.635 M = 0.5146 XTI = 0 TT = 1.157E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2024/05/22 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMWSH120H43SM4 Spice Model ---------- .SUBCKT DMWSH120H43SM4 D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : JAY M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.0278 RS 30 3 1E-06 RG 20 2 1.37 CGS 2 3 2.183E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.56E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 5.1 TOX = 1E-07 NSUB = 3E+15 KP = 12 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 1.792E-10 VJ = 0.505 M = 0.4202 .MODEL DSUB D IS = 1.2E-07 N = 7.073 RS = 0.018 BV = 1743 CJO = 4.461E-09 VJ = 0.635 M = 0.5146 XTI = 0 TT = 1.157E-08 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2024/05/22 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMWSH120H90SM3 Spice Model ---------- .SUBCKT DMWSH120H90SM3 D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : JAY M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.05085 RS 30 3 1E-06 RG 20 2 2.46 CGS 2 3 1.087E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.636E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.6 TOX = 1E-07 NSUB = 6E+15 KP = 5 U0 = 380 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.158E-11 VJ = 0.501 M = 0.3571 .MODEL DSUB D IS = 4.093E-07 N = 9.4 RS = 0.035 BV = 1771 CJO = 2.146E-09 VJ = 0.6 M = 0.4947 XTI = 0 TT = 5.9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2024/07/03 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMWSH120H90SM3Q Spice Model ---------- .SUBCKT DMWSH120H90SM3Q D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : JAY M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.05085 RS 30 3 1E-06 RG 20 2 2.46 CGS 2 3 1.087E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.636E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.6 TOX = 1E-07 NSUB = 6E+15 KP = 5 U0 = 380 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 7.158E-11 VJ = 0.501 M = 0.3571 .MODEL DSUB D IS = 4.093E-07 N = 9.4 RS = 0.035 BV = 1771 CJO = 2.146E-09 VJ = 0.6 M = 0.4947 XTI = 0 TT = 5.9E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2024/07/03 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMWSH120H90SM4 Spice Model ---------- .SUBCKT DMWSH120H90SM4 D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : JAY M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.059 RS 30 3 1E-06 RG 20 2 2.02 CGS 2 3 1.11E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.614E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 5.2 TOX = 1E-07 NSUB = 5E+15 KP = 5.6 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.38E-11 VJ = 0.501 M = 0.4012 .MODEL DSUB D IS = 2.563E-07 N = 8.4 RS = 0.0222 BV = 1575 CJO = 2.193E-09 VJ = 0.6 M = 0.4856 XTI = 0 TT = 6.04E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2024/05/24 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *---------- DMWSH120H90SM4Q Spice Model ---------- .SUBCKT DMWSH120H90SM4Q D=10 G=20 S=30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : JAY M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 RD 10 1 0.059 RS 30 3 1E-06 RG 20 2 2.02 CGS 2 3 1.11E-09 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.614E-09 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 5.2 TOX = 1E-07 NSUB = 5E+15 KP = 5.6 U0 = 350 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 9.38E-11 VJ = 0.501 M = 0.4012 .MODEL DSUB D IS = 2.563E-07 N = 8.4 RS = 0.0222 BV = 1575 CJO = 2.193E-09 VJ = 0.6 M = 0.4856 XTI = 0 TT = 6.04E-09 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0 Last Revised 2024/05/24 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet. *DIODES_INC_SPICE_MODEL DN0150ADJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.2 .MODEL DN0150ADJ NPN (IS=26E-15 NF=1 BF=180 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DN0150ALP4 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=17Aug2012 *VERSION=1.0 .MODEL DN0150ALP4 NPN (IS=26E-15 NF=1 BF=180 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DN0150BDJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.2 .MODEL DN0150BDJ NPN (IS=26E-15 NF=1 BF=260 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DN0150BLP4 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=17Aug2012 *VERSION=1.0 .MODEL DN0150BLP4 NPN (IS=26E-15 NF=1 BF=260 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=DN350T05;DI_DN350T05;BJTs NPN; Si; 350V 0.500A 50.0MHz Diodes Inc. NPN BJT .MODEL DI_DN350T05 NPN (IS=177f NF=1.00 BF=185 VAF=337 + IKF=0.182 ISE=68.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=1.26 RB=5.05 RC=0.505 + XTB=1.5 CJE=69.1p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=3.05n TR=116n EG=1.12 ) *SRC=DNBT8105;DI_DNBT8105;BJTs NPN; Si; 60.0V 1.00A 150MHz Diodes Inc. Single NPN BJT .MODEL DI_DNBT8105 NPN (IS=167f NF=1.00 BF=264 VAF=139 + IKF=0.364 ISE=65.8p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.900 RE=0.231 RB=0.926 RC=92.6m + XTB=1.5 CJE=117p VJE=1.10 MJE=0.500 CJC=16.6p VJC=0.300 + MJC=0.300 TF=973p TR=165n EG=1.12 ) *SRC=DNLS160;DI_DNLS160;BJTs NPN; Si; 60.0V 1.00A 300MHz .MODEL DI_DNLS160 NPN (IS=3.69f NF=1.00 BF=322 VAF=139 + IKF=0.989 ISE=6.05f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=48.0m RB=0.192 RC=19.2m + XTB=1.5 CJE=120p VJE=1.10 MJE=0.500 CJC=20.8p VJC=0.300 + MJC=0.300 TF=480p TR=83.0n EG=1.12 ) *SRC=DNLS160V;DI_DNLS160V;BJTs NPN; Si; 60.0V 1.00A 300MHz .MODEL DI_DNLS160V NPN (IS=3.69f NF=1.00 BF=322 VAF=139 + IKF=0.989 ISE=6.05f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=48.0m RB=0.192 RC=19.2m + XTB=1.5 CJE=120p VJE=1.10 MJE=0.500 CJC=20.8p VJC=0.300 + MJC=0.300 TF=480p TR=83.0n EG=1.12 ) *SRC=DNLS350E;DI_DNLS350E;BJTs NPN; Si; 50.0V 3.00A 220MHz .MODEL DI_DNLS350E NPN (IS=11.7f NF=1.00 BF=388 VAF=127 + IKF=2.97 ISE=8.95f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=23.8m RB=95.3m RC=9.53m + XTB=1.5 CJE=341p VJE=1.10 MJE=0.500 CJC=45.4p VJC=0.300 + MJC=0.300 TF=574p TR=111n EG=1.12 ) *SRC=DNLS350Y;DI_DNLS350Y;BJTs NPN; Si; 50.0V 3.00A 220MHz .MODEL DI_DNLS350Y NPN (IS=11.7f NF=1.00 BF=388 VAF=127 + IKF=2.97 ISE=8.95f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=23.8m RB=95.3m RC=9.53m + XTB=1.5 CJE=341p VJE=1.10 MJE=0.500 CJC=45.4p VJC=0.300 + MJC=0.300 TF=574p TR=111n EG=1.12 ) *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=18Apr2014 *VERSION=1.1 .MODEL DP0150BLP4 PNP IS=3E-15 NF=1 BF=145 ISE=2E-15 NE=1.45 + BR=4 ISC=15E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 + CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=135m XTB=1 NK=.7 .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *SRC=DP350T05;DI_DP350T05;BJTs PNP; Si; 350V 0.500A 50.0MHz Diodes Inc. PNP BJT .MODEL DI_DP350T05 PNP (IS=177f NF=1.00 BF=185 VAF=337 + IKF=0.182 ISE=68.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=1.26 RB=5.05 RC=0.505 + XTB=1.5 CJE=73.2p VJE=1.10 MJE=0.500 CJC=11.8p VJC=0.300 + MJC=0.300 TF=3.04n TR=116n EG=1.12 ) *SRC=DPBT8105;DI_DPBT8105;BJTs PNP; Si; 80.0V 1.00A 150MHz Diodes Inc. BJT PNP .MODEL DI_DPBT8105 PNP (IS=101f NF=1.00 BF=410 VAF=161 + IKF=0.304 ISE=29.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.281 RB=1.13 RC=0.113 + XTB=1.5 CJE=117p VJE=1.10 MJE=0.500 CJC=28.4p VJC=0.300 + MJC=0.300 TF=972p TR=162n EG=1.12 ) *SRC=DPLS160;DI_DPLS160;BJTs PNP; Si; 60.0V 1.00A 240MHz .MODEL DI_DPLS160 PNP (IS=2.94f NF=1.00 BF=327 VAF=139 + IKF=0.989 ISE=5.32f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=64.0m RB=0.256 RC=25.6m + XTB=1.5 CJE=130p VJE=1.10 MJE=0.500 CJC=31.2p VJC=0.300 + MJC=0.300 TF=607p TR=49.8n EG=1.12 ) *SRC=DPLS160V;DI_DPLS160V;BJTs PNP; Si; 60.0V 1.00A 240MHz .MODEL DI_DPLS160V PNP (IS=2.94f NF=1.00 BF=327 VAF=139 + IKF=0.989 ISE=5.32f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=64.0m RB=0.256 RC=25.6m + XTB=1.5 CJE=130p VJE=1.10 MJE=0.500 CJC=31.2p VJC=0.300 + MJC=0.300 TF=607p TR=49.8n EG=1.12 ) *SRC=DPLS350E;DI_DPLS350E;BJTs PNP; Si; 50.0V 3.00A 200MHz .MODEL DI_DPLS350E PNP (IS=9.40f NF=1.00 BF=382 VAF=127 + IKF=2.48 ISE=8.14f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=3.75 RE=25.8m RB=0.103 RC=10.3m + XTB=1.5 CJE=337p VJE=1.10 MJE=0.500 CJC=76.7p VJC=0.300 + MJC=0.300 TF=645p TR=122n EG=1.12 ) *SRC=DPLS350Y;DI_DPLS350Y;BJTs PNP; Si; 50.0V 3.00A 200MHz .MODEL DI_DPLS350Y PNP (IS=9.40f NF=1.00 BF=382 VAF=127 + IKF=2.48 ISE=8.14f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=3.75 RE=25.8m RB=0.103 RC=10.3m + XTB=1.5 CJE=337p VJE=1.10 MJE=0.500 CJC=76.7p VJC=0.300 + MJC=0.300 TF=645p TR=122n EG=1.12 ) *SRC=DRDN005W;DI_DRDN005W_NPN;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. Transistor .MODEL DI_DRDN005W_NPN NPN (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=576p TR=110n EG=1.12 ) *SRC=DRDN005W;DI_DRDN005W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDN005W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=DRDN010W;DI_DRDN010W_NPN;BJTs NPN; Si; 18.0V 1.00A 100MHz Diodes Inc. BJTs .MODEL DI_DRDN010W_NPN NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4 + IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m + XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 + TF=1.55n TR=238n EG=1.12 ) *SRC=DRDN010W;DI_DRDN010W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDN010W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=DRDNB16W;DI_DRDNB16W_NPN;BJTs NPN; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DRDNB16W_NPN NPN (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) *SRC=DRDNB16W;DI_DRDNB16W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDNB16W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) Note: The following SPICE model is for the individual elements of this device. When applying this SPICE model to your circuit simulation be certain to add R1 and R2 values per the table found on the data sheet for the pre-biased transistor elements. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DRDNB21D;DI_DRDNB21D_NPN;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DRDNB21D_NPN NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) *SRC=DRDNB21D;DI_DRDNB21D_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDNB21D_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=DRDNB26W;DI_DRDNB26W_NPN;BJTs NPN; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DRDNB26W_NPN NPN (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) *SRC=DRDNB26W;DI_DRDNB26W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDNB26W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=DRDP006W;DI_DRDP006W_PNP;BJTs PNP; Si; 60.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_DRDP006W_PNP PNP (IS=60.7f NF=1.00 BF=312 VAF=139 + IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 + MJC=0.300 TF=758p TR=123n EG=1.12 ) *SRC=DRDP006W;DI_DRDP006W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDP006W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=DRDPB16W;DI_DRDPB16W_PNP;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DRDPB16W_PNP PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) *SRC=DRDPB16W;DI_DRDPB16W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDPB16W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=DRDPB26W;DI_DRDPB26W_PNP;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DRDPB26W_PNP PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) *SRC=DRDPB26W;DI_DRDPB26W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDPB26W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *DIODES_INC_SPICE_MODEL_DSL12AW *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=24/07/2015 *VERSION=1 .MODEL DSL12AW PNP IS=25E-13 BF=250 NF=1 VAF=18.7 IKF=3.8 + ISE=1.9E-13 NE=1.5 BR=100 NR=1 VAR=5 IKR=2 ISC=1.3e-13 NC=1.45 RE=0.01 + RB=0.2 RC=0.02 CJE=199E-12 VJE=0.9 MJE=0.48 CJC=80E-12 VJC=0.53 + MJC=0.3 TF=3.8E-10 TR=3.8e-9 TRB1=.02 XTB=1.4 * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL_DSS20200L *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=30/10/2012 *VERSION=1 .MODEL DSS20200L PNP IS=2.5E-13 BF=400 NF=1 VAF=18.7 IKF=3.8 + ISE=1.9E-13 NE=1.5 BR=110 NR=1 VAR=5 IKR=2 ISC=1.3e-13 NC=1.45 RE=0.01 + RB=0.2 RC=0.02 CJE=199E-12 VJE=0.9 MJE=0.48 CJC=80E-12 VJC=0.53 + MJC=0.3 TF=3.8E-10 TR=3.8e-9 TRB1=.02 XTB=1.5 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=SIMETRIX *DATE=15-Dec-2017 *VERSION=1 * .MODEL DSS20201L NPN IS=2.8E-13 NF=1 BF=390 IKF=9 NK=0.73 VAF=67 + ISE=7E-14 NE =1.4 NR =1 BR =36 IKR=1.7 VAR=14 ISC=4e-13 NC=1.4 RB=0.15 + RE =.008 RC =.006 RCO=0.29 GAMMA=1.1E-9 CJC=47E-12 MJC=0.33 VJC=0.49 + CJE=196E-12 MJE=0.34 VJE=0.68 TF=0.7E-9 TR=20e-9 XTB=1.4 TRE1=.005 + TRB1=.005 TRC1=.005 QUASIMOD=1 * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DSS2515M *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=02Apr2012 *VERSION=1 .MODEL DSS2515M NPN(IS=6E-14 BF=450 NF=.98 ISE=1.25E-14 NE=1.25 BR=40 NR=.99 ISC=2E-14 NC=1.15 RC=.05 RE=.05 CJE=36.08p VJE.75 MJE=.37 CJC=11.196p VJC=.5 MJC=.3 VAF=20 IKF=1.1 NK=.77) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DSS2540M *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=02Apr2012 *VERSION=1 .MODEL DSS2540M NPN(IS=6E-14 BF=500 NF=.98 ISE=1E-14 NE=1.25 ISC=3.3E-14 BR=15 NR=1 NC=1.12 CJE=36.592p VJE=.75 MJE=.37 CJC=9.674p VJC=.5 MJC=.33 VAF=28 IKF=1 RC=.1 RE=.05 NK=.808) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=1 * .MODEL DSS30101L NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=14/11/2013 *VERSION=1 .MODEL DSS3540M PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350 + VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5 + MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=14/11/2013 *VERSION=1 .MODEL DSS3540M PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350 + VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5 + MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=2 * .MODEL DSS4140U NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=2 * .MODEL DSS4140V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2013 *VERSION=1 * .MODEL DSS4160DS NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2015 *VERSION=1 * .MODEL DSS4160FDB NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2015 *VERSION=1 * .MODEL DSS4160FDB NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2013 *VERSION=1 * .MODEL DSS4160T NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2013 *VERSION=1 * .MODEL DSS4160T NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2013 *VERSION=1 * .MODEL DSS4160U NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2013 *VERSION=1 * .MODEL DSS4160V NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=16/9/2009 *VERSION=1 * .MODEL DSS4220V NPN IS=7.5E-13 BF=700 NF=1.005 VAF=61 IKF=3.3 + ISE=8.5E-14 NE=1.35 BR=130 NR=1 VAR=11.3 IKR=1.4 ISC=6E-13 NC=1.38 + RE=0.061 RB=0.5 RC=0.010 CJE=143E-12 VJE=0.80 MJE=0.39 CJC=39E-12 + VJC=0.40 MJC=0.26 TF=0.48E-9 TR=2.7E-9 RCO=0.42 GAMMA=2E-9 + QUASIMOD=1 XTB=1.35 TRE1=0.004 TRB1=0.004 TRC1=0.004 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=1 * .MODEL DSS4240T NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=2 * .MODEL DSS4240V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=SIMETRIX *DATE=15-Dec-2017 *VERSION=1 * .MODEL DSS4320T NPN IS=2.8E-13 NF=1 BF=390 IKF=9 NK=0.73 VAF=67 + ISE=7E-14 NE =1.4 NR =1 BR =36 IKR=1.7 VAR=14 ISC=4e-13 NC=1.4 RB=0.15 + RE =.008 RC =.006 RCO=0.29 GAMMA=1.1E-9 CJC=47E-12 MJC=0.33 VJC=0.49 + CJE=196E-12 MJE=0.34 VJE=0.68 TF=0.7E-9 TR=20e-9 XTB=1.4 TRE1=.005 + TRB1=.005 TRC1=.005 QUASIMOD=1 * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DSS4160_DSS5160_SH *SIMULATOR=SIMETRIX *DATE=13/5/2020 *VERSION=1 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT DSS45160FDB 1 2 3 4 5 6 Q1 6 2 1 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .MODEL Pmod PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300 + VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3 + RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12 + VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1 + RCO=1.4 GAMMA=15e-10 .ENDS * *$ * * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/09 *VERSION=1 * .MODEL DSS4540X NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=21/04/2009 *VERSION=1 * .MODEL DSS5140U PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430 + VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3 + RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12 + VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1 + RCO=0.85 GAMMA=6e-10 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=21/04/2009 *VERSION=1 * .MODEL DSS5140V PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430 + VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3 + RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12 + VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1 + RCO=0.85 GAMMA=6e-10 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=10-Dec-2014 *VERSION=1 * .MODEL DSS5160T PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300 + VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3 + RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12 + VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1 + RCO=1.4 GAMMA=15e-10 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=10-Dec-2014 *VERSION=1 * .MODEL DSS5160T PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300 + VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3 + RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12 + VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1 + RCO=1.4 GAMMA=15e-10 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=24/04/2009 *VERSION=1 * .MODEL DSS5160U PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300 + VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3 + RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12 + VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1 + RCO=1.4 GAMMA=15e-10 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=10-Dec-2014 *VERSION=1 * .MODEL DSS5160V PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300 + VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3 + RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12 + VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1 + RCO=1.4 GAMMA=15e-10 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=10 Nov 2020 *VERSION=2 * .MODEL DSS5220T PNP + IS=5.5e-13 + NF=1.005 + ISE=1.2e-13 + NE=1.55 + BF=590 + VAF=21 + IKF=2 + ISC=1.8e-13 + NC=1.39 + BR=52 + VAR=5.7 + IKR=0.6 + RE=0.067 + RB=0.33 + RC=0.012 + CJE=147e-12 + VJE=0.88 + MJE=0.48 + CJC=51e-12 + VJC=0.51 + MJC=0.33 + TF=4.5e-10 + TR=5.6e-9 + QUASIMOD=1 + RCO=0.66 + GAMMA=1.3e-9 + XTB=1.5 + TRE1=0.004 + TRB1=0.003 + TRC1=0.004 * *$ ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=17/9/2009 *VERSION=1 .MODEL DSS5220V PNP IS=5.5e-13 NF=1.005 ISE=1.2e-13 NE=1.55 BF=590 + VAF=21 IKF=2 ISC=1.8e-13 NC=1.39 BR=52 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=147e-12 VJE=0.88 MJE=0.48 CJC=51e-12 VJC=0.51 + MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/2009 *VERSION=1 * .MODEL DSS5240T PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 + ISE=10E-14 NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 + RE=0.014 RB=0.12 RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 + MJC=0.41 VJC=0.62 CJE=183E-12 MJE=0.5 VJE=0.95 TF=3.9E-10 + TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 TRC1=0.003 QUASIMOD=1 * *$ *DIODES_INC_DSS5240Y_SPICE_MODEL *DATE=16Sep2024 *VERSION=1.1 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DSS5240Y PNP (IS=11.4f NF=1.00 BF=471 VAF=28 + IKF=2.51 ISE=156f NE=2.00 BR=40.00 NR=1.00 NK=0.49 NC=1.5 ISC=361f + VAR=20.0 IKR=3.00 RE=48.2m RB=0.193 RC=39.3m RCO=0.77 + XTB=1.6 XTI=9 CJE=125p VJE=1.10 MJE=0.500 CJC=142.2p VJC=0.300 + MJC=0.300 TF=46p TR=13.8n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.001 GAMMA=0.06n QUASIMOD=1 ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=11 Nov 2020 *VERSION=2 * .MODEL DSS5320T PNP + IS=6.8E-13 + NF=1 + ISE=0.8E-13 + NE=1.5567 ;+ BF=480 + BF=500 + VAF=23 + IKF=2 + ISC=7.5E-14 + NC=1.19 + BR=70 + VAR=7 + IKR=0.4 + RE=0.04 + RB=0.085 + RC=0.045 + CJE=203.6E-12 + VJE=0.9403 + MJE=0.5029 + CJC=70.02E-12 + VJC=0.7714 + MJC=0.4685 + TF=0.71E-9 + TR=23.7E-9 * + QUASIMOD=1 ;+ RCO=0.66 + RCO=0.76 ;+ GAMMA=1.3e-9 + GAMMA=1.3e-9 ;+ XTB=1.5 + XTB=1.7 ;+ TRE1=0.004 + TRE1=0.004 ;+ TRB1=0.003 + TRB1=0.003 ;+ TRC1=0.004 + TRC1=0.004 ;+ NR=1.00 * *$ * ****************************************************************************** * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_DSS5540X_SPICE_MODEL *DATE=23Jan2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DSS5540X PNP (IS=3.003p NF=1.00 BF=433 VAF=114 + IKF=12.74 ISE=0.3p NE=2.00 BR=47.00 NR=1.00 NK=0.9 ISC=21p NC=1.9 + VAR=24.0 IKR=7.50 RE=17.4m RB=61.5m RC=6.15m RCO=0.002 + XTB=1.5 CJE=543p VJE=1.10 MJE=0.500 CJC=139p VJC=0.300 + MJC=0.300 TF=5.42n TR=11.1n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.001 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/2009 *VERSION=1 * .MODEL DSS60600MZ4 PNP IS=5.3E-13 BF=220 NF=1.0 VAF=84 IKF=11 + ISE=5E-14 NE=1.4 BR=45 NR=1 VAR=8.9 IKR=5 ISC=5E-14 NC=1.07 RE=0.015 + RB=0.27 RC=0.022 CJE=750E-12 VJE=0.68 MJE=0.4 CJC=170E-12 VJC=0.55 + MJC=0.4 TF=0.5E-9 TR=2.2E-8 RCO=0.22 GAMMA=5e-10 QUASIMOD=1 + TRE1=.005 TRB1=.005 XTB=1.4 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/2009 *VERSION=1 * .MODEL DSS60600MZ4 PNP IS=5.3E-13 BF=220 NF=1.0 VAF=84 IKF=11 + ISE=5E-14 NE=1.4 BR=45 NR=1 VAR=8.9 IKR=5 ISC=5E-14 NC=1.07 RE=0.015 + RB=0.27 RC=0.022 CJE=750E-12 VJE=0.68 MJE=0.4 CJC=170E-12 VJC=0.55 + MJC=0.4 TF=0.5E-9 TR=2.2E-8 RCO=0.22 GAMMA=5e-10 QUASIMOD=1 + TRE1=.005 TRB1=.005 XTB=1.4 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/2009 *VERSION=1 * .MODEL DSS60601MZ4 NPN IS=1.0085E-12 NF=1.0001 BF=210 IKF=4 VAF=158 + ISE=7E-13 NE=1.38 NR=0.9988 BR=90 IKR=3 VAR=46 ISC=4.6515E-13 + NC=1.334 RB=0.2 RE=0.018 RC=0.016 CJC=93E-12 MJC=0.4348 + VJC=0.6477 CJE=0.63E-9 TF=0.75E-9 TR=20E-9 XTB=1.5 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/2009 *VERSION=1 * .MODEL DSS60601MZ4 NPN IS=1.0085E-12 NF=1.0001 BF=210 IKF=4 VAF=158 + ISE=7E-13 NE=1.38 NR=0.9988 BR=90 IKR=3 VAR=46 ISC=4.6515E-13 + NC=1.334 RB=0.2 RE=0.018 RC=0.016 CJC=93E-12 MJC=0.4348 + VJC=0.6477 CJE=0.63E-9 TF=0.75E-9 TR=20E-9 XTB=1.5 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=9-Sep-2014 *VERSION=1 * .MODEL DSS8110Y NPN IS=1.2e-13 NF=.975 ISE=50e-15 NE=1.35 BF=200 + ISC=3.5e-13 NC=1.25 BR=3 NR=.99 RE=0.029 VAF=30 IKF=4 + RB=0.33 RC=0.01 CJE=185e-12 VJE=0.7 MJE=0.345 CJC=25e-12 VJC=0.5 + MJC=0.345 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.05 GAMMA=1.3e-9 NK=.7 + XTB=1.3 EG=1.2 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE=DSS9110Y *DATE=June_2018 *ORIGIN=SH *SIMULATOR=DIODES, SIMETRIX *VERSION=1 .MODEL DSS9110Y PNP +CJC=53.8E-12 MJC=0.375 VJC=0.5 CJE=248E-12 MJE=0.44 VJE=0.8 +IS=7E-15 +NF=0.995 ISE=1E-14 NE=1.46 BF=380 +NR=1 ISC=1E-14 NC=1.2 BR=20 +IKF=2.5 IKR=1.5 +RC=0.01 RE=0.04 RB=0.1 +TRE1=0.003 TRB1=0.003 TRC1=0.003 XTB=1 +VAF=55 VAR=6 +RCO=.4 +GAMMA=1E-12 +QUASIMOD=1 +TF=10E-9 TR=20e-9 +NK=0.85 * * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL DST3904DJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Feb2011 *VERSION=1 .MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST3906DJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST3946DPJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .SUBCKT DST3946DPJ 1 2 3 4 5 6 Q1 6 2 1 DST3904DJ Q2 3 5 4 DST3906DJ .MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) .MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST847BDJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=15Mar2011 *VERSION=1 .MODEL DST847BDJ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 + RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST847BPDP6 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.1 .SUBCKT DST847BPDP6 1 2 3 4 5 6 Q1 6 2 1 DST847BDJ Q2 3 5 4 DST857BDJ .MODEL DST847BDJ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) .MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL DST857BDJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.2 .MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=DVR5V0W;DI_DVR5V0W_NPN;BJTs NPN; Si; 18.0V 1.00A 100MHz Diodes Inc. BJTs .MODEL DI_DVR5V0W_NPN NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4 + IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m + XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 + TF=1.55n TR=238n EG=1.12 ) *SRC=DVR5V0W;DI_DVR5V0W_Zener;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DVR5V0W_Zener 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) *SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=717p TR=121n EG=1.12 ) *SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode *SYM=HZEN .SUBCKT DI_UDZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.99 .MODEL DF D ( IS=14.7p RS=3.10 N=1.10 + CJO=32.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=1.28 N=0.828 ) .ENDS * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=19NOV2010 *VERSION=1 * .MODEL DXT2010P5 NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 + ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 + NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 + VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=19JAN11 *VERSION=1 * .MODEL DXT2011P5 NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13 + NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15 + RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78 + QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4 + TRC1=0.003 TRB1=0.003 TRE1=0.003 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=19JAN11 *VERSION=1 * .MODEL DXT2011P5 NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13 + NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15 + RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78 + QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4 + TRC1=0.003 TRB1=0.003 TRE1=0.003 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=04-Jun-2014 *VERSION=1 * .MODEL DXT2012P5 PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=19JAN11 *VERSION=1 * .MODEL DXT2013P5 PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6 +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019 +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9 +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10 * *$ *DIODES_INC_SPICE_MODEL DXT2014P5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL DXT2014P5 PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=DXT2222A;DI_DXT2222A;BJTs NPN; Si; 40.0V 0.600A 410MHz - .MODEL DI_DXT2222A NPN (IS=9.69f NF=1.00 BF=272 VAF=114 + IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101 + XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=362p TR=60.3n EG=1.12 ) *SRC=DXT2907A;DI_DXT2907A;BJTs PNP; Si; 60.0V 0.600A 360MHz - .MODEL DI_DXT2907A PNP (IS=6.60f NF=1.00 BF=151 VAF=139 + IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174 + XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300 + MJC=0.300 TF=416p TR=71.8n EG=1.12 ) *SRC=DXT3904;DI_DXT3904;BJTs NPN; Si; 40.0V 0.200A 420MHz - .MODEL DI_DXT3904 NPN (IS=3.52e-016 NF=1.00 BF=233 VAF=114 + IKF=39.0m ISE=2.61f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=60.0m RE=0.655 RB=2.62 RC=0.262 + XTB=1.5 CJE=6.25p VJE=1.10 MJE=0.500 CJC=4.78p VJC=0.300 + MJC=0.300 TF=368p TR=59.4n EG=1.12 ) *SRC=DXT3906;DI_DXT3906;BJTs PNP; Si; 40.0V 0.200A 510MHz - .MODEL DI_DXT3906 PNP (IS=2.87e-016 NF=1.00 BF=160 VAF=114 + IKF=88.5m ISE=120f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.705 RB=2.82 RC=0.282 + XTB=1.5 CJE=8.98p VJE=1.10 MJE=0.500 CJC=6.15p VJC=0.300 + MJC=0.300 TF=293p TR=50.4n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=29May2013 *VERSION=1 * * .MODEL DXT458P5 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *Diodes DXT5401 Spice Model v1.0 Last Revised 16/02/09 * .MODEL DXT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL DZT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=1 * .MODEL DXT5551P5 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=1 * .MODEL DXT5551P5 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ *SRC=DXT651;DI_DXT651;BJTs NPN; Si; 60.0V 3.00A 200MHz .MODEL DI_DXT651 NPN (IS=7.42f NF=1.00 BF=206 VAF=139 + IKF=1.98 ISE=13.4f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=3.00 RE=32.0m RB=0.128 RC=12.8m + XTB=1.5 CJE=390p VJE=1.10 MJE=0.500 CJC=48.3p VJC=0.300 + MJC=0.300 TF=626p TR=76.3n EG=1.12 ) *SRC=DXT651;DI_DXT651;BJTs NPN; Si; 60.0V 3.00A 200MHz .MODEL DI_DXT651 NPN (IS=7.42f NF=1.00 BF=206 VAF=139 + IKF=1.98 ISE=13.4f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=3.00 RE=32.0m RB=0.128 RC=12.8m + XTB=1.5 CJE=390p VJE=1.10 MJE=0.500 CJC=48.3p VJC=0.300 + MJC=0.300 TF=626p TR=76.3n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=21Oct2013 *VERSION=1 * .MODEL DXT690BP5 NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=21Oct2013 *VERSION=1 * .MODEL DXT690BP5 NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=14-Jan-2014 *VERSION=1 * .MODEL DXT696BK NPN IS=.98476E-12 NF=.999 BF=705 IKF=0.8 VAF=235 +ISE=8.1E-14 NE=1.36 NR=1.002 BR=20 IKR=.8 VAR=26 ISC=.66E-12 +NC=1.15 RB=.07 RE=.125 RC=.098 CJC=25.4E-12 MJC=.47 VJC=.445 +CJE=270E-12 TF=1.301E-9 TR =690E-9 XTB=1.4 +QUASIMOD=1 RCO=24 GAMMA=75E-8 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=DXT751;DI_DXT751;BJTs PNP; Si; 60.0V 3.00A 145MHz .MODEL DI_DXT751 PNP (IS=8.12f NF=1.00 BF=171 VAF=139 + IKF=2.97 ISE=16.9f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=27.3m RB=0.109 RC=10.9m + XTB=1.5 CJE=421p VJE=1.10 MJE=0.500 CJC=79.3p VJC=0.300 + MJC=0.300 TF=719p TR=71.5n EG=1.12 ) *SRC=DXT751Q;DI_DXT751Q;BJTs PNP; Si; 60.0V 3.00A 145MHz .MODEL DI_DXT751 PNP (IS=8.12f NF=1.00 BF=171 VAF=139 + IKF=2.97 ISE=16.9f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=27.3m RB=0.109 RC=10.9m + XTB=1.5 CJE=421p VJE=1.10 MJE=0.500 CJC=79.3p VJC=0.300 + MJC=0.300 TF=719p TR=71.5n EG=1.12 ) *DIODES_INC_SPICE_MODEL DXT790AP5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=25Oct2012 *VERSION=1 .MODEL DXT790AP5 PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=DXTA42;DI_DXTA42;BJTs NPN; Si; 300V 0.500A 140MHz - .MODEL DI_DXTA42 NPN (IS=19.4f NF=1.00 BF=144 VAF=312 + IKF=58.6m ISE=31.4f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.895 RB=3.58 RC=0.358 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=8.82p VJC=0.300 + MJC=0.300 TF=751p TR=185n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=18/09/2014 *VERSION=1 * .MODEL DXTA92 PNP IS =4E-14 NF =1.01 BF =105 +IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 +GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40 +ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1 +CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 +TF =0.7E-9 TR =1.6e-6 XTB=1.4 * *$ * * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DXTN07045DFG Spice Model v1.0 Last revision 13/07/07 * .MODEL DXTN07045DFG NPN IS=1.5E-12 NF=1 BF=1160 IKF=4 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.022 RC=0.015 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.6E-9 +TR=9E-9 RCO=0.75 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.004 TRB1=0.004 +TRC1=0.004 * *$ * *DXTN10060DFJBQ Spice model *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE=10 February 2020 *VERSION=1 *#SIMETRIX .Model DXTN10060DFJBQ NPN + IS = 5.8032E-13 + NF = 1.02 + ISE = 1.5933E-13 + NE = 1.4148 + BF = 465 + IKF = 8 + NK = 0.8 + VAF = 84 ; + NR = 1.0006 ; + ISC = 5E-12 ; + NC = 1.6 ; + BR = 110 ; + IKR = 1.4 ; + VAR = 51 ; + RB = 14.5 ; + IRB = 8.00E-06; + RBM = 0.2 ; + RE = 0.05 ; + RC = 0.0375 ; + CJE= 2.17E-10; + VJE = 0.75 ; + MJE = 0.33 ; + CJC = 4E-11 ; + VJC = 0.4347 ; + MJC = 0.3708 ; + XCJC = 1 ; + CJS = 0 ; + VJS = 0.75 ; + MJS = 0 ; + TF = 780.0E-12 + XTF = 0 ; + VTF = 1E+20 ; + ITF = 0 ; + PTF = 0 ; + TR = 9.00E-09 + XTB = 1.3 + XTI = 3 + RCO = 0 + TRB1 = 0 + TRB2 = 0 + TRC1 = 0 + TRC2 = 0 + TRE1 = 0 + TRE2 = 0 + TRM1 = 0 + TRM2 = 0 * T_ABS = + T_MEASURED = 27 * T_REL_GLOBAL = + QUASIMOD = 1 + CN = 2.42 ; + D = 0.87 ; + FC = 0.5 ; + EG = 1.11 ; + GAMMA = 1E-11 ; + ISS = 0 ; + NS = 1 ; + QCO = 0 ; + AF = 1 ; + KF = 0 ; + VG = 1.206 ; + VO = 10 ; .ends * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DXTN10060DFJBWQ Spice model *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE=10 February 2020 *VERSION=1 *#SIMETRIX .Model DXTN10060DFJBWQ NPN + IS = 5.8032E-13 + NF = 1.02 + ISE = 1.5933E-13 + NE = 1.4148 + BF = 465 + IKF = 8 + NK = 0.8 + VAF = 84 ; + NR = 1.0006 ; + ISC = 5E-12 ; + NC = 1.6 ; + BR = 110 ; + IKR = 1.4 ; + VAR = 51 ; + RB = 14.5 ; + IRB = 8.00E-06; + RBM = 0.2 ; + RE = 0.05 ; + RC = 0.0375 ; + CJE= 2.17E-10; + VJE = 0.75 ; + MJE = 0.33 ; + CJC = 4E-11 ; + VJC = 0.4347 ; + MJC = 0.3708 ; + XCJC = 1 ; + CJS = 0 ; + VJS = 0.75 ; + MJS = 0 ; + TF = 780.0E-12 + XTF = 0 ; + VTF = 1E+20 ; + ITF = 0 ; + PTF = 0 ; + TR = 9.00E-09 + XTB = 1.3 + XTI = 3 + RCO = 0 + TRB1 = 0 + TRB2 = 0 + TRC1 = 0 + TRC2 = 0 + TRE1 = 0 + TRE2 = 0 + TRM1 = 0 + TRM2 = 0 * T_ABS = + T_MEASURED = 27 * T_REL_GLOBAL = + QUASIMOD = 1 + CN = 2.42 ; + D = 0.87 ; + FC = 0.5 ; + EG = 1.11 ; + GAMMA = 1E-11 ; + ISS = 0 ; + NS = 1 ; + QCO = 0 ; + AF = 1 ; + KF = 0 ; + VG = 1.206 ; + VO = 10 ; .ends * (c) 2020 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DXTN3C100PS Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=30Jan2019 *VERSION=1 *#SIMETRIX .MODEL DXTN3C100PS NPN + IS=8.00E-13 ; transport saturation current (A) + NF=1.0 ; forward current emission coefficient + BF=265 ; ideal maximum forward beta + IKF=0.65 ; corner for forward beta high current roll off (A) + VAF=26 ; forward early voltage (V) + ISE=7E-14 ; base-emitter leakage saturation current (A) + NE=1.3 ; base-emitter leakage emission coefficient + NR=1.01 ; reverse current emission coefficient + BR=9 ; ideal maximum reverse beta + VAR=140.5 ; reverse Early voltage (V) + ISC=4e-14 ; base-collector leakage saturation current (A) + NC=1.1 ; base-collector leakage emission coefficient + RB=0 ; zero-bias (maximum) base resistance (Ohm) + RE=.03 ; emitter ohmic resistance (Ohm) + RC=.03 ; collector ohmic resistance (Ohm)3 + CJC=63E-12 ; base-collector zero-bias p-n capacitance (F) + MJC=0.38 ; base-collector p-n grading factor + VJC=0.45 ; base-collector built-in potential (V) + CJE=514E-12 ; base-emitter zero-bias p-n capacitance (F) + VJE=0.75 ; base-collector built-in potential (V) + TF=1.04E-9 ; ideal forward transit time (s) + TR=4e-9 ; ideal reverse transit time (s) + XTI=3.3 ; + XTB=1.45 ; + EG=1.17 ; + GAMMA=1E-11 ; *$ * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DXTN3C100PS Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=30Jan2019 *VERSION=1 *#SIMETRIX .MODEL DXTN3C100PS NPN + IS=8.00E-13 ; transport saturation current (A) + NF=1.0 ; forward current emission coefficient + BF=265 ; ideal maximum forward beta + IKF=0.65 ; corner for forward beta high current roll off (A) + VAF=26 ; forward early voltage (V) + ISE=7E-14 ; base-emitter leakage saturation current (A) + NE=1.3 ; base-emitter leakage emission coefficient + NR=1.01 ; reverse current emission coefficient + BR=9 ; ideal maximum reverse beta + VAR=140.5 ; reverse Early voltage (V) + ISC=4e-14 ; base-collector leakage saturation current (A) + NC=1.1 ; base-collector leakage emission coefficient + RB=0 ; zero-bias (maximum) base resistance (Ohm) + RE=.03 ; emitter ohmic resistance (Ohm) + RC=.03 ; collector ohmic resistance (Ohm)3 + CJC=63E-12 ; base-collector zero-bias p-n capacitance (F) + MJC=0.38 ; base-collector p-n grading factor + VJC=0.45 ; base-collector built-in potential (V) + CJE=514E-12 ; base-emitter zero-bias p-n capacitance (F) + VJE=0.75 ; base-collector built-in potential (V) + TF=1.04E-9 ; ideal forward transit time (s) + TR=4e-9 ; ideal reverse transit time (s) + XTI=3.3 ; + XTB=1.45 ; + EG=1.17 ; + GAMMA=1E-11 ; *$ * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DXTN3C60PS Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=18Feb2019 *VERSION=1 *#SIMETRIX .Model DXTN3C60PS NPN + AF = 1 ; + BF = 266 ;266 + BR = 20 ;20, + CJC = 79e-12 ; + CJE= 489e-12 ; + CJS = 0 ; + CN = 2.42 ;2.42 + ; + D = 0.87 ;0.87 for npn + ; + EG = 1.11 ;1.11 + FC = 0.5 ;0.5 + GAMMA = 1E-5 ;1E-11, 1e-5 for vce(sat), 5e-11 for vce(sat) vs temp and Rce(sat) vs temp (-55c), + IKF = 3.8 ;3.8 + IKR = 400 ;400 + IRB = 1E+20 ; + IS = 8E-13 ;8e-13, 2e-13 for vce(sat) + ISC = 4E-13 ;4e-13 + ISE = 6E-14 ;6E-14 + ISS = 0 ; + ITF = 0 ; + KF = 0 ; + MJC = 0.37 ; + MJE = 0.34 ; + MJS = 0 ; + NC = 1.3 ;1.3 + NE = 1.3 ;1.3 + NF = 1.0 ;1 + NK = 0.54 ;0.6, 0.54 for vbe(sat) + NR = 1.0 ;1.0 + NS = 1.0 ;1.0 + PTF = 0 ; + QCO = 0 ; + QUASIMOD = 1 ; + ; + ; + ; + ; + RB = 1 ;30, 1 for Vbe(sat), + ;RBM = 1 ;30, 1 for Vbe(sat), + RC = 0.025 ;.025 + RCO = -0.14 ;-0.14 + RE = 0.025 ;.025 + TF = 1.5E-10 ; + TR = 0 ; + TRB1 = 0 ; + TRB2 = 0 ; + TRC1 = 0 ; + TRC2 = 0 ; + TRE1 = 0 ; + TRE2 = 0 ; + TRM1 = 0 ; + TRM2 = 0 ; * T_ABS = ; + T_MEASURED =27 ; * T_REL_GLOBAL = ; + VAF = 16 ;16 + VAR = 1000 ;1000 + VG = 1.206 ; + VJC = 0.47 ;0.47 + VJE = 0.66 ;0.66 + VJS = 0.75 ;0.75 + VO = 1000 ;1000 + VTF = 1E+20 ;1E+20 + XCJC = 1 ; + XTB = 1.45 ;1.45, 4.45 for VceSat temperatures + XTF = 0 ; + XTI = 3.3 ; * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DXTN3C60PS Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=18Feb2019 *VERSION=1 *#SIMETRIX .Model DXTN3C60PS NPN + AF = 1 ; + BF = 266 ;266 + BR = 20 ;20, + CJC = 79e-12 ; + CJE= 489e-12 ; + CJS = 0 ; + CN = 2.42 ;2.42 + ; + D = 0.87 ;0.87 for npn + ; + EG = 1.11 ;1.11 + FC = 0.5 ;0.5 + GAMMA = 1E-5 ;1E-11, 1e-5 for vce(sat), 5e-11 for vce(sat) vs temp and Rce(sat) vs temp (-55c), + IKF = 3.8 ;3.8 + IKR = 400 ;400 + IRB = 1E+20 ; + IS = 8E-13 ;8e-13, 2e-13 for vce(sat) + ISC = 4E-13 ;4e-13 + ISE = 6E-14 ;6E-14 + ISS = 0 ; + ITF = 0 ; + KF = 0 ; + MJC = 0.37 ; + MJE = 0.34 ; + MJS = 0 ; + NC = 1.3 ;1.3 + NE = 1.3 ;1.3 + NF = 1.0 ;1 + NK = 0.54 ;0.6, 0.54 for vbe(sat) + NR = 1.0 ;1.0 + NS = 1.0 ;1.0 + PTF = 0 ; + QCO = 0 ; + QUASIMOD = 1 ; + ; + ; + ; + ; + RB = 1 ;30, 1 for Vbe(sat), + ;RBM = 1 ;30, 1 for Vbe(sat), + RC = 0.025 ;.025 + RCO = -0.14 ;-0.14 + RE = 0.025 ;.025 + TF = 1.5E-10 ; + TR = 0 ; + TRB1 = 0 ; + TRB2 = 0 ; + TRC1 = 0 ; + TRC2 = 0 ; + TRE1 = 0 ; + TRE2 = 0 ; + TRM1 = 0 ; + TRM2 = 0 ; * T_ABS = ; + T_MEASURED =27 ; * T_REL_GLOBAL = ; + VAF = 16 ;16 + VAR = 1000 ;1000 + VG = 1.206 ; + VJC = 0.47 ;0.47 + VJE = 0.66 ;0.66 + VJS = 0.75 ;0.75 + VO = 1000 ;1000 + VTF = 1E+20 ;1E+20 + XCJC = 1 ; + XTB = 1.45 ;1.45, 4.45 for VceSat temperatures + XTF = 0 ; + XTI = 3.3 ; * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_DXTN58100CFDB_SPICE_MODEL *DATE=23Sep2024 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DXTN58100CFDB NPN (IS=271f NF=1.00 BF=401 VAF=10 VO=6 + IKF=10.53 ISE=1.51p NE=2.00 BR=68.00 NR=1.00 NK=0.57 NC=1.3 ISC=2.40p + VAR=10.0 IKR=5.55 RE=25.1m RB=76.5m RC=7.65m RCO=1.5 + XTB=1.3 XTI=5 CJE=1648p VJE=1.10 MJE=0.500 CJC=947.7p VJC=0.300 + MJC=0.300 TF=4597p TR=24n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.001 GAMMA=10n QUASIMOD=1 ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_DXTN69060CE_SPICE_MODEL *DATE=08Oct2024 *VERSION=1.1 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DXTN69060CE NPN (IS=2.36p NF=1.00 BF=367 VAF=139 + IKF=31.7 ISE=5.1p NE=2.00 BR=127.00 NR=1.00 NK=0.7 ISC=140p NC=1.6 + VAR=28.0 IKR=15.0 RE=7.6m RB=46.5m RC=18.65m RCO=0.57 + XTB=1.3 XTI=5 CJE=33.2p VJE=0.89 MJE=0.500 CJC=66.4p VJC=0.300 + MJC=0.300 TF=31p TR=22.4n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=20n QUASIMOD=1 ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_DXTN69060CFG_SPICE_MODEL *DATE=08Oct2024 *VERSION=1.1 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DXTN69060CFG NPN (IS=2.36p NF=1.00 BF=367 VAF=139 + IKF=31.7 ISE=5.1p NE=2.00 BR=127.00 NR=1.00 NK=0.7 ISC=140p NC=1.6 + VAR=28.0 IKR=15.0 RE=7.6m RB=46.5m RC=18.65m RCO=0.57 + XTB=1.3 XTI=5 CJE=33.2p VJE=0.89 MJE=0.500 CJC=66.4p VJC=0.300 + MJC=0.300 TF=31p TR=22.4n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=20n QUASIMOD=1 ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_DXTP03200BP5Q_SPICE_MODEL *DATE=10Mar2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DXTP03200BP5Q PNP (IS=35p NF=1.00 BF=204 VAF=255 + IKF=9.34 ISE=1.2p NE=2.00 BR=21.00 NR=1.00 NK=0.98 ISC=710p NC=1.4 + VAR=28.0 IKR=7.50 RE=96.5m RB=0.238 RC=23.8m RCO=0.01 + XTB=1.5 CJE=278p VJE=1.10 MJE=0.500 CJC=89.6p VJC=0.300 + MJC=0.300 TF=1.21n TR=182.3n EG=1.12 QUASIMOD=1 + TRE1=0.001 TRB1=0.003 TRC1=0.001 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_DXTP07060BFG_SPICE_MODEL *DATE=31May2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DXTP07060BFG PNP (IS =2.715E-13 NF =1.004 BF =170 VAF=70 + IKF=2.75 ISE=1E-13 NE =1.535 BR =23 NR =1.005 NK=0.34 ISC=5.15E-14 NC =1.13 + VAR=40 IKR=.55 RE =.025 RB =.07 RC =.045 RCO=.002 + XTB=1.6 CJE=360E-12 VJE=1.10 MJE=.500 CJC=90E-12 VJC=.705 + MJC=.46 TF =.94E-9 TR =60E-9 EG=1.12 + TRE1 =0.001 TRB1 =0.003 TRC1 =0.003 QUASIMOD=1 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_SPICE_MODEL DXTP19020DP5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=08/04/2013 *VERSION=1 .MODEL DXTP19020DP5 PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13 + IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15 + RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6 + CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DXTP3C100PS Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=17Feb2019 *VERSION=1 *#SIMETRIX .Model DXTP3C100PS PNP + AF = 1 ; + BF = 306 ;306 + BR = 30 ;20 + CJC = 7.9E-11 ; + CJE= 4.89E-10 ; + CJS = 0 ; + CN = 2.2 ;2.2 + ; + D = 0.52 ;0.52 + ; + EG = 1.12 ; + FC = 0.5 ;0.5 + GAMMA = 5E-10 ;1e-11, 5e-11,5e-10 + IKF = 1.8 ;3.8, 1.8 + ;IKR = 400 ;400 + IRB = 1E+20 ;1e=+20 + IS = 8E-13 ;8e-13 + ISC = 2.4e-11 ;4e-13, 2.4e-11 + ISE = 6E-14 ;6e-14 + ISS = 0 ; + ITF = 0 ; + KF = 0 ; + MJC = 0.37 ;.37 + MJE = 0.34 ; + MJS = 0 ; + NC = 1.4 ;1.3,1.5,1.4 + NE = 1.3 ; + NF = 1 ; + NK = 0.78 ;0.54, 0.9 + NR = 1 ; + NS = 1 ; + PTF = 0 ; + QCO = 0 ; + QUASIMOD =1 ; + ; + ; + ; + ; + RB = .4 ;0.4 + ;RBM = 0 ; + ;RC = 0.05 ; + RCO = -0.14 ; + ;RE = 0.05 ; + TF = 1.5E-10 ; + TR = 0 ; + TRB1 = 0 ; + TRB2 = 0 ; + TRC1 = 0 ; + TRC2 = 0 ; + TRE1 = 0 ; + TRE2 = 0 ; + TRM1 = 0 ; + TRM2 = 0 ; * T_ABS = ; + T_MEASURED =27 ; * T_REL_GLOBAL = ; + VAF = 15 ; + VAR = 1000 ; + VG = 1.206 ; + VJC = 0.47 ; + VJE = 0.66 ; + VJS = 0.75 ; + VO = 1000 ; + VTF = 1E+20 ; + XCJC = 1 ; + XTB = 1.45 ;1.35 + XTF = 0 ; + XTI = 3.3 ;3 * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DXTP3C100PS Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=17Feb2019 *VERSION=1 *#SIMETRIX .Model DXTP3C100PS PNP + AF = 1 ; + BF = 306 ;306 + BR = 30 ;20 + CJC = 7.9E-11 ; + CJE= 4.89E-10 ; + CJS = 0 ; + CN = 2.2 ;2.2 + ; + D = 0.52 ;0.52 + ; + EG = 1.12 ; + FC = 0.5 ;0.5 + GAMMA = 5E-10 ;1e-11, 5e-11,5e-10 + IKF = 1.8 ;3.8, 1.8 + ;IKR = 400 ;400 + IRB = 1E+20 ;1e=+20 + IS = 8E-13 ;8e-13 + ISC = 2.4e-11 ;4e-13, 2.4e-11 + ISE = 6E-14 ;6e-14 + ISS = 0 ; + ITF = 0 ; + KF = 0 ; + MJC = 0.37 ;.37 + MJE = 0.34 ; + MJS = 0 ; + NC = 1.4 ;1.3,1.5,1.4 + NE = 1.3 ; + NF = 1 ; + NK = 0.78 ;0.54, 0.9 + NR = 1 ; + NS = 1 ; + PTF = 0 ; + QCO = 0 ; + QUASIMOD =1 ; + ; + ; + ; + ; + RB = .4 ;0.4 + ;RBM = 0 ; + ;RC = 0.05 ; + RCO = -0.14 ; + ;RE = 0.05 ; + TF = 1.5E-10 ; + TR = 0 ; + TRB1 = 0 ; + TRB2 = 0 ; + TRC1 = 0 ; + TRC2 = 0 ; + TRE1 = 0 ; + TRE2 = 0 ; + TRM1 = 0 ; + TRM2 = 0 ; * T_ABS = ; + T_MEASURED =27 ; * T_REL_GLOBAL = ; + VAF = 15 ; + VAR = 1000 ; + VG = 1.206 ; + VJC = 0.47 ; + VJE = 0.66 ; + VJS = 0.75 ; + VO = 1000 ; + VTF = 1E+20 ; + XCJC = 1 ; + XTB = 1.45 ;1.35 + XTF = 0 ; + XTI = 3.3 ;3 * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DXTP3C60PS Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=18Feb2019 *VERSION=1 *#SIMETRIX .Model DXTP3C60PS PNP + AF = 1 ; + BF = 306 ;306,256 + BR = 30 ;20 + CJC = 7.9E-11 ; + CJE= 4.89E-10 ; + CJS = 0 ; + CN = 2.2 ;2.2 + ; + D = 0.52 ;0.52 + ; + EG = 1.12 ; + FC = 0.5 ;0.5 + GAMMA = 5E-10 ;1e-11, 5e-11,5e-10 + IKF = 8.8 ;3.8, 1.8,10.8 + ;IKR = 400 ;400 + IRB = 1E+20 ;1e=+20 + IS = 8E-13 ;8e-13 + ISC = 2.4e-14 ;4e-13, 2.4e-11 + ISE = 1e-14 ;6e-14,6.5e-14 + ISS = 0 ; + ITF = 0 ; + KF = 0 ; + MJC = 0.37 ;.37 + MJE = 0.34 ; + MJS = 0 ; + NC = 1.4 ;1.3,1.5,1.4 + NE = 1.3 ; + NF = 1 ; + NK = 1.1 ;0.54, 0.9,0.8 + NR = 1 ; + NS = 1 ; + PTF = 0 ; + QCO = 0 ; + QUASIMOD =1 ; + ; + ; + ; + ; + RB = 5 ;0.4 + ;RBM = 0 ; + RC = 0.05 ; + RCO = 0.3 ; + RE = 0.05 ; + TF = 1.5E-10 ; + TR = 0 ; + TRB1 = 0 ; + TRB2 = 0 ; + TRC1 = 0 ; + TRC2 = 0 ; + TRE1 = 0 ; + TRE2 = 0 ; + TRM1 = 0 ; + TRM2 = 0 ; * T_ABS = ; + T_MEASURED =27 ; * T_REL_GLOBAL = ; + VAF = 40 ; + VAR = 1000 ; + VG = 1.206 ; + VJC = 0.47 ; + VJE = 0.66 ; + VJS = 0.75 ; + VO = 1000 ; + VTF = 1E+20 ; + XCJC = 1 ; + XTB = 1.45 ;1.35,1.45 + XTF = 0 ; + XTI = 3.3 ;3,3.3 * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DXTP3C60PS Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=18Feb2019 *VERSION=1 *#SIMETRIX .Model DXTP3C60PS PNP + AF = 1 ; + BF = 306 ;306,256 + BR = 30 ;20 + CJC = 7.9E-11 ; + CJE= 4.89E-10 ; + CJS = 0 ; + CN = 2.2 ;2.2 + ; + D = 0.52 ;0.52 + ; + EG = 1.12 ; + FC = 0.5 ;0.5 + GAMMA = 5E-10 ;1e-11, 5e-11,5e-10 + IKF = 8.8 ;3.8, 1.8,10.8 + ;IKR = 400 ;400 + IRB = 1E+20 ;1e=+20 + IS = 8E-13 ;8e-13 + ISC = 2.4e-14 ;4e-13, 2.4e-11 + ISE = 1e-14 ;6e-14,6.5e-14 + ISS = 0 ; + ITF = 0 ; + KF = 0 ; + MJC = 0.37 ;.37 + MJE = 0.34 ; + MJS = 0 ; + NC = 1.4 ;1.3,1.5,1.4 + NE = 1.3 ; + NF = 1 ; + NK = 1.1 ;0.54, 0.9,0.8 + NR = 1 ; + NS = 1 ; + PTF = 0 ; + QCO = 0 ; + QUASIMOD =1 ; + ; + ; + ; + ; + RB = 5 ;0.4 + ;RBM = 0 ; + RC = 0.05 ; + RCO = 0.3 ; + RE = 0.05 ; + TF = 1.5E-10 ; + TR = 0 ; + TRB1 = 0 ; + TRB2 = 0 ; + TRC1 = 0 ; + TRC2 = 0 ; + TRE1 = 0 ; + TRE2 = 0 ; + TRM1 = 0 ; + TRM2 = 0 ; * T_ABS = ; + T_MEASURED =27 ; * T_REL_GLOBAL = ; + VAF = 40 ; + VAR = 1000 ; + VG = 1.206 ; + VJC = 0.47 ; + VJE = 0.66 ; + VJS = 0.75 ; + VO = 1000 ; + VTF = 1E+20 ; + XCJC = 1 ; + XTB = 1.45 ;1.35,1.45 + XTF = 0 ; + XTI = 3.3 ;3,3.3 * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=06Sep2013 *VERSION=1 * * .MODEL DXTP560BP5 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54 +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3 +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12 +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_DXTP58100CFDB_SPICE_MODEL *DATE=20Sep2024 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL DXTP58100CFDB PNP (IS=253f NF=1.00 BF=347 VAF=11 VO=5.2 + IKF=3.97 ISE=0.3p NE=2.00 BR=31.00 NR=1.00 NK=0.30 NC=1.30 ISC=1.62p + VAR=8.0 IKR=3.90 RE=22.2m RB=73.0m RC=12.30m RCO=0.75 + XTB=1.5 XTI=6 CJE=334p VJE=1.10 MJE=0.500 CJC=886p VJC=0.600 + MJC=0.300 TF=171p TR=54.5n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.001 GAMMA=0.8n QUASIMOD=1 ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *SRC=DZ23C10;DI_DZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.81 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=4.60 N=2.97 ) *SRC=DZ23C11;DI_DZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=4.60 N=2.97 ) *SRC=DZ23C12;DI_DZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=9.46 N=3.00 ) *SRC=DZ23C13;DI_DZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=14.5 N=3.00 ) *SRC=DZ23C15;DI_DZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=14.5 N=3.00 ) *SRC=DZ23C16;DI_DZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=24.5 N=3.00 ) *SRC=DZ23C18;DI_DZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=29.5 N=3.00 ) *SRC=DZ23C20;DI_DZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=39.5 N=3.00 ) *SRC=DZ23C22;DI_DZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=39.5 N=3.00 ) *SRC=DZ23C24;DI_DZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=54.5 N=3.00 ) *SRC=DZ23C27;DI_DZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=64.5 N=3.00 ) *SRC=DZ23C2V7;DI_DZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.190 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=84.5 N=3.00 ) *SRC=DZ23C30;DI_DZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 ) *SRC=DZ23C33;DI_DZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 ) *SRC=DZ23C36;DI_DZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 ) *SRC=DZ23C39;DI_DZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 ) *SRC=DZ23C3V0;DI_DZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.507 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61f RS=79.5 N=3.00 ) *SRC=DZ23C3V3;DI_DZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.799 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74f RS=79.5 N=3.00 ) *SRC=DZ23C3V6;DI_DZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.12 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01f RS=74.5 N=3.00 ) *SRC=DZ23C3V9;DI_DZ23C3V9;Diodes;Zener <=10V; 3.90V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.41 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=74.5 N=3.00 ) *SRC=DZ23C43;DI_DZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.0 .MODEL DF D ( IS=3.35p RS=27.8 N=1.10 + CJO=22.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 ) *SRC=DZ23C47;DI_DZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. - *SYM=HZEN .SUBCKT DI_DZ23C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 43.9 .MODEL DF D ( IS=3.07p RS=27.6 N=1.10 + CJO=22.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 ) *SRC=DZ23C4V3;DI_DZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.80 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=74.5 N=3.00 ) *SRC=DZ23C4V7;DI_DZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.25 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=64.5 N=3.00 ) *SRC=DZ23C51;DI_DZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DZ23C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.5 .MODEL DF D ( IS=2.83p RS=1.77 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 ) *SRC=DZ23C5V1;DI_DZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.74 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=44.5 N=3.00 ) *SRC=DZ23C5V6;DI_DZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.33 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=24.5 N=3.00 ) *SRC=DZ23C6V2;DI_DZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=2.30 N=1.49 ) *SRC=DZ23C6V8;DI_DZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=3.45 N=2.23 ) *SRC=DZ23C7V5;DI_DZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=3.45 N=2.23 ) *SRC=DZ23C8V2;DI_DZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.57 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=3.45 N=2.23 ) *SRC=DZ23C9V1;DI_DZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.46 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=3.45 N=2.23 ) *DZDH0401DW Spice model *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_PH *DATE= 12 November 2020 *VERSION=2 *#SIMETRIX * DZDH0401DW REF BIAS SOURCE DRAIN .subckt DZDH0401DW 2 3 4 6 Q1 3 2 4 DI_PNP Q2 6 2 2 DI_PNP .MODEL DI_PNP PNP + IS=8.40e-15 + NF=1.11 + ISE=2.13e-11 + NE=1.65 + BF=210 + VAF=114 + IKF=48.6e-3 + ISC=2.7e-12 + NC=2.0 + BR=56.00 + NR=1.0006 + VAR=200 + IKR=0.120 + RE=1.21 + RB=4.83 + RC=0.483 + CJE=10.9p + VJE=1.10 + MJE=1.50 + CJC=17p + VJC=0.3 + MJC=0.300 + TF=558p + TR=84.1n + EG=1.12 + XTB=1.5 .ends DZDH0401DW ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *SRC=DZL6V8AXV3;DZL6V8AXV3;Diodes;Zener <=10V; 6.80V 0.220W DIODES INC *SYM=HZEN .SUBCKT DZL6V8AXV3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=65.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.67f RS=3.45 N=2.23 ) .ENDS *SRC=DZT2222A;DI_DZT2222A;BJTs NPN; Si; 40.0V 0.600A 410MHz - .MODEL DI_DZT2222A NPN (IS=9.69f NF=1.00 BF=272 VAF=114 + IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101 + XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=362p TR=60.3n EG=1.12 ) *SRC=DZT2907A;DI_DZT2907A;BJTs PNP; Si; 60.0V 0.600A 360MHz - .MODEL DI_DZT2907A NPN (IS=6.60f NF=1.00 BF=151 VAF=139 + IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174 + XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300 + MJC=0.300 TF=416p TR=71.8n EG=1.12 ) *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *UPDATE=March2019 *VERSION=2.0 *SRC=DZT2907A;DI_DZT2907A;BJTs PNP; Si; 60.0V 0.600A 360MHz - .MODEL DI_DZT2907A PNP (IS=6.60f NF=1.00 BF=151 VAF=139 + IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174 + XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300 + MJC=0.300 TF=416p TR=71.8n EG=1.12 ) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL DZT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL DZT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL DZT5551Q NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * * *SRC=DZTA42;DI_DZTA42;BJTs NPN; Si; 300V 0.500A 140MHz - .MODEL DI_DZTA42 NPN (IS=19.4f NF=1.00 BF=144 VAF=312 + IKF=58.6m ISE=31.4f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.895 RB=3.58 RC=0.358 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=8.82p VJC=0.300 + MJC=0.300 TF=751p TR=185n EG=1.12 ) *SRC=DZTA42;DI_DZTA42Q;BJTs NPN; Si; 300V 0.500A 140MHz - .MODEL DI_DZTA42Q NPN (IS=19.4f NF=1.00 BF=144 VAF=312 + IKF=58.6m ISE=31.4f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.895 RB=3.58 RC=0.358 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=8.82p VJC=0.300 + MJC=0.300 TF=751p TR=185n EG=1.12 ) *SRC=ES1A;DI_ES1A;Diodes;Si; 50.0V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1A D ( IS=123n RS=42.0m BV=50.0 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1B;DI_ES1B;Diodes;Si; 100V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1B D ( IS=123n RS=42.0m BV=100 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1C;DI_ES1C;Diodes;Si; 150V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1C D ( IS=123n RS=42.0m BV=150 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1D;DI_ES1D;Diodes;Si; 200V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1D D ( IS=123n RS=42.0m BV=200 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1G;DI_ES1G;Diodes;Si; 400V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1G D ( IS=373n RS=64.3m BV=400 IBV=5.00u + CJO=18.5p M=0.333 N=2.84 TT=28.8n ) *SRC=ES2A;DI_ES2A;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2A D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2AA;DI_ES2AA;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2AA D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) **************************************************************************************** *SRC=ES2B;DI_ES2B;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2B D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) **************************************************************************************** SRC=ES2BA;DI_ES2BA;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2BA D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) *************************************************************************************** *SRC=ES2C;DI_ES2C;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2C D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) *************************************************************************************** *SRC=ES2CA;DI_ES2CA;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2CA D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2D;DI_ES2D;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2D D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2DA;DI_ES2DA;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2DA D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2G;DI_ES2G;Diodes;Si; 400V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2G D ( IS=3.92n RS=21.0m BV=400 IBV=5.00u + CJO=83.5p M=0.333 N=1.95 TT=36.0n ) *SRC=ES3A;DI_ES3A;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3A D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3AB;DI_ES3AB;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3AB D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3B;DI_ES3B;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3B D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3BB;DI_ES3BB;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3BB D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3C;DI_ES3C;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3C D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3CB;DI_ES3CB;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3CB D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3D;DI_ES3D;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3D D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3DB;DI_ES3DB;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3DB D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *ZETEX FCX1047A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1047A NPN IS=9.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=400 IKR=5 VAR=15 + ISC=8E-13 NC=1.4 RB=0.1 RE=0.017 RC=0.010 + CJC=195.4E-12 CJE=540.4E-12 MJC=0.257 MJE=0.359 + VJC=0.390 VJE=0.753 TF=450E-12 TR=1.2E-9 * *$ * *ZETEX FCX1051A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * *ZETEX FCX1051A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * *ZETEX FCX1053A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * *ZETEX FCX1053A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * *ZETEX FCX1147A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 BF=500 + VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 BR=90 VAR=3.1 + IKR=1.2 RE=15e-3 RB=145e-3 RC=13e-3 CJE=560e-12 + CJC=255e-12 VJC=0.6288 MJC=0.4048 TF=1.2e-9 TR=13e-9 * *$ * *ZETEX FCX1149A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1149A PNP IS=9.5e-13 NF=1.002 ISE=1.2e-13 NE=1.4 BF=520 + VAF=24.97 IKF=5 NR=0.997 ISC=4.5E-13 NC=1.25 BR=40 + VAR=2.51 IKR=0.7 RE=20e-3 RB=150e-3 RC=10e-3 + CJE=490e-12 CJC=150e-12 VJC=1.094 MJC=0.4739 + TF=1e-9 TR=3.5e-9 * *$ * *ZETEX FCX1151A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1151A PNP IS=1.7e-12 NF=1.004 ISE=1.02e-13 NE=1.55 BF=562 + VAF=26.01 IKF=3.5 NR=.97 ISC=1.5e-13 NC=1.3 BR=38 + VAR=2.41 IKR=0.3 RE=25.37e-3 RB=250e-3 RC=25e-3 + CJE=440e-12 CJC=160e-12 VJC=1.058 MJC=0.5678 + TF=0.8e-9 TR=55.5e-9 * *$ * *ZETEX FCX458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FCX458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * *ZETEX FCX458Q Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FCX458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * .MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ *ZETEX FCX491 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ * *ZETEX FCX491 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ * .MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ *ZETEX FCX493 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FCX493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *DIODES_INC_FCX493Q_SPICE_MODEL *DATE=16Jun2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=LTSPICE * .MODEL FCX493Q NPN ( IS=60E-15 NF=0.99 BF=295 VAF=270 + IKF=1.3 ISE=10f NE=1.2 BR=30 NR=0.98 NK=0.7 ISC=0.12p NC=1.2 + VAR=27 IKR=0.5 RE=110m RB=0.2 RC=90m RCO=0.02 + XTB=1.4 CJE=108p VJE=0.7 MJE=0.35 CJC=15.9p VJC=0.51 + MJC=0.4 TF=800p TR=55n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=5n QUASIMOD=1 ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** * .MODEL FCX495 NPN IS=1E-13 NF=1 BF=205 IKF=4 VAF=300 ISE=1E-13 + NE=1.5 NR=0.98 BR=24 VAR=45 ISC=1e-13 NC=1.2 RB=0.4 RE=0.07 + RC=0.08 RCO=17 GAMMA=9E-8 CJC=15.3E-12 MJC=0.27 VJC=0.35 CJE=114E-12 + MJE=0.33 VJE=0.68 TF=0.8E-9 TR=120e-9 XTB=1.4 QUASIMOD=1 * *$ * .MODEL FCX495 NPN IS=1E-13 NF=1 BF=205 IKF=4 VAF=300 ISE=1E-13 + NE=1.5 NR=0.98 BR=24 VAR=45 ISC=1e-13 NC=1.2 RB=0.4 RE=0.07 + RC=0.08 RCO=17 GAMMA=9E-8 CJC=15.3E-12 MJC=0.27 VJC=0.35 CJE=114E-12 + MJE=0.33 VJE=0.68 TF=0.8E-9 TR=120e-9 XTB=1.4 QUASIMOD=1 * *$ * .MODEL FCX555 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 + VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 + NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 + RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 + CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 + TF=0.7E-9 TR=2e-7 * *$ *ZETEX FCX558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FCX558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ * *ZETEX FCX558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FCX558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ * *ZETEX FCX589 Spice Model v1.0 Last Revised 26/01/05 * .MODEL FCX589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * .MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ *ZETEX FCX591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX FCX591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * .MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ .MODEL FCX593 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ *ZETEX FCX596 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FCX596 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 +TF=0.7E-9 TR=2e-7 * *$ * *ZETEX FCX605 Spice Model v1.0 Last Revised 27/04/05 * .SUBCKT FCX605 1 2 3 * C B E Q1 1 2 4 SUB605 Q2 1 4 3 SUB605 3.46 * .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS FCX605 * *$ * *ZETEX FCX617 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FCX617 NPN IS =5.92E-13 BF =500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE =1.425 NR =1 BR =280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC =1.46 RB =0.1 RE =0.025 RC =0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF =1.12E-9 TR =2.15E-9 * *$ * *ZETEX FCX619 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FCX619 NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 + VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 + RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF =0.78E-9 TR =9E-9 * *$ * *ZETEX FCX619 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FCX619 NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 + VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 + RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF =0.78E-9 TR =9E-9 * *$ * *ZETEX FCX658A Spice Model v2.0 Last Revised 21/1/05 * .MODEL FCX658A NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154 +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48 +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36 +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55 +QUASIMOD=1 RCO=38 GAMMA=20E-8 * *$ * *ZETEX FCX688B Spice Model v1.0 Last Revised 2/1/03 * .MODEL FCX688B NPN IS =1.09E-12 NF =0.9935 BF =1180 IKF=5.2 VAF=25 +ISE=1.3E-13 NE =1.35 NR =0.992 BR =790 IKR=.5 VAR=5 ISC=0.174E-12 +NC =1.399 RB =.3 RE =.036 RC =.034 CJC=104E-12 MJC=.29 VJC=.46 +CJE=280E-12 TF =.93E-9 TR =1.05E-9 * *$ * *ZETEX FCX690B Spice Model v2.0 Last revision 12/07/07 * .MODEL FCX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * * *Zetex FCX705 Spice Model v1.0 Last Revised 12/08/08 * .SUBCKT FCX705 1 2 3 * C B E Q1 1 2 4 SUB705 Q2 1 4 3 SUB705 4 * .MODEL SUB705 PNP IS=3.35584E-14 BF=85 VAF=212 NF=1.002 IKF=0.817 + ISE=3.6E-13 NE=4.1 BR=24 VAR=6 NR=0.999 IKR=0.114 ISC=1.406E-13 NC=1.13 + RB=1.1 RE=0.4 RC=0.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=0.595 .ENDS FCX705 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *ZETEX FCX717 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FCX717 PNP IS =5.5E-13 BF =500 IKF =3 VAF =14.93 + ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03 + RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 + TR =2E-9 * *$ * *ZETEX FCX718 Spice Model v1.0 Last Revised 11/03/02 * .MODEL FCX718 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * *ZETEX FCX789A Spice Model v1.0 Last Revised 2/1/03 * .MODEL FCX789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5 +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14 +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26 +CJE=300E-12 TF=0.73E-9 TR=4.2E-9 * *$ * *ZETEX FCX790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL FCX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *FES2DEQ-7 Spice Model v1.0 Last Revised 11/23/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_FES2DEQ-7 D ( IS=91.46n RS=20.89m BV=220.00 IBV=10.00 + CJO=79.59p M=380.8m N=1.817 TT=22.92n EG=480.0m VJ=346.3m ) *ZETEX FMMT38C Spice Model v1.0 Last Revised 12/6/02 * .SUBCKT FMMT38C 1 2 3 * C B E Q1 1 2 4 SUB38C Q2 1 4 3 SUB38C 12.75 * .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9 .ENDS FMMT38C * *$ * *ZETEX FMMT38C Spice Model v1.0 Last Revised 12/6/02 * .SUBCKT FMMT38C 1 2 3 * C B E Q1 1 2 4 SUB38C Q2 1 4 3 SUB38C 12.75 * .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9 .ENDS FMMT38C * *$ * *ZETEX FMMT413 Spice Model v1.0 Last Revised 15/10/04 * .SUBCKT FMMT413 16 15 14 *Pins_____________C__B__E Q_Q1 9 8 7 QMOD_1 R_R1 5 6 100 R_R2 5 4 100 R_R3 12 3 100 R_R4 3 1 500 R_R5 10 2 2k R_R6 10 11 1.5 D_D1 10 5 DZ20 D_D2 4 2 DZ500 D_D3 10 3 DZ200 D_D4 1 2 DZ500 D_D5 7 9 DZ300 C_C1 10 2 20p S_S1 13 11 2 10 SMOD1 S_S2 9 13 2 10 SMOD2 S_S3 8 10 2 10 SMOD3 V_H1 7 10 0 H1 6 10 V_H1 50 E1 12 10 11 10 10 L_L1 9 16 1nH L_L2 15 8 2nH L_L3 10 14 2nH .Model QMOD_1 NPN IS =1.8E-14 ISE=5.0E-14 NF =.9955 NE =1.46 +BF =400 BR =35.5 IKF=.14 IKR=.03 ISC=1.72E-13 NC =1.27 NR =1.005 +RB =.56 RE =.6 RC =.25 VAF=80 VAR=12.5 CJE=13E-12 CJC=4E-12 +VJC=.54 MJC=.33 TF =.64E-9 TR =50.72E-9 .Model DZ20 D Is=1E-15 Bv=20 Ibv=100u .Model DZ200 D Is=1E-15 Bv=200 Ibv=100u .Model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u .Model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u .Model SMOD1 VSWITCH Roff=1e10 Ron=0.05 Voff=4.3 Von=4.6 .Model SMOD2 VSWITCH Roff=1e3 Ron=.5 Voff=4.5 Von=9 .Model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25 .ENDS FMMT413 * *$ * *ZETEX FMMT415 Spice Model v1.0 Last Revised 14/01/03 * .SUBCKT FMMT415 16 15 14 *Pins______________C__B__E Q_Q1 9 8 7 QMOD_1 R_R1 5 6 100 R_R2 5 4 100 R_R3 12 3 100 R_R4 3 1 500 R_R5 10 2 2k R_R6 10 11 2 D_D1 10 5 DZ20 D_D2 4 2 DZ500 D_D3 10 3 DZ200 D_D4 1 2 DZ500 D_D5 7 9 DZ300 C_C1 10 2 20p S_S1 13 11 2 10 SMOD1 S_S2 9 13 2 10 SMOD2 S_S3 8 10 2 10 SMOD3 V_H1 7 10 0 H1 6 10 V_H1 50 E1 12 10 11 10 10 L_L1 9 16 1nH L_L2 15 8 2nH L_L3 10 14 2nH .Model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4 +VAF=1900 ISE=1E-12 NE =1.6 +NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9 +RB =0.4 RE =0.1 RC =0.1 +CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12 +TF =1.3E-9 TR =2.3e-7 .Model DZ20 D Is=1E-15 Bv=20 Ibv=100u .Model DZ200 D Is=1E-15 Bv=200 Ibv=100u .Model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u .Model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u .Model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6 .Model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9 .Model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25 .ENDS FMMT415 * *$ * *ZETEX FMMT417 Spice Model v2.0 Last Revised 23/03/07 * .SUBCKT FMMT417 16 15 14 *Pins______________C__B__E Q_Q1 9 8 7 QMOD_1 R_R1 5 6 100 R_R2 5 4 100 R_R3 12 3 100 R_R4 3 1 500 R_R5 10 2 2k R_R6 10 11 2 D_D1 10 5 DZ20 D_D2 4 2 DZ500 D_D3 10 3 DZ200 D_D4 1 2 DZ500 D_D5 7 9 DZ350 C_C1 10 2 20p S_S1 13 11 2 10 SMOD1 S_S2 9 13 2 10 SMOD2 S_S3 8 10 2 10 SMOD3 V_H1 7 10 0 H1 6 10 V_H1 50 E1 12 10 11 10 10 L_L1 9 16 1nH L_L2 15 8 2nH L_L3 10 14 2nH .model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4 +VAF=1900 ISE=1E-12 NE =1.6 +NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9 +RB =0.4 RE =0.1 RC =0.1 +CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12 +TF =1.3E-9 TR =2.3e-7 .model DZ20 D Is=1E-15 Bv=20 Ibv=100u .model DZ200 D Is=1E-15 Bv=200 Ibv=100u .model DZ350 D Is=1E-15 Rs=0.1 Bv=350 Ibv=100u .model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u .model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6 .model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9 .model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25 .ENDS FMMT417 * *$ * *ZETEX FMMT449 Spice Model v1.0 Last Revised 11/11/04 * .MODEL FMMT449 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JAN2011 *VERSION=1 * .MODEL FMMT451 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8 +ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13 +NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12 +TR =85E-9 VJC=.505 MJC=.39 * *$ * .MODEL FMMT455 NPN IS =5.6E-14 BF =260 VAF=660 NF =.992 IKF=.155 ISE=3.1E-14 +NE =1.2502 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 RB =1.1 +RE =.161 RC =.0339 CJC=11.6E-12 TF =.75E-9 CJE=53.5E-12 TR =100E-9 VJC=.505 +MJC=.455 * *$ *ZETEX FMMT458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FMMT458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * *ZETEX FMMT458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FMMT458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * *ZETEX FMMT459 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT459 NPN IS=4E-14 NF=1 BF=130 VAF=1000 ISE=4E-13 NE=1.59 +RCO=60 GAMMA=1E-7 NR=1 BR=10 VAR=100 ISC=1e-10 NC=1.6 IKR=30E-3 +RB=1 RE=.1 RC=.1 CJC=9E-12 MJC=0.36 VJC=0.51 CJE=99E-12 MJE=0.42 +VJE=0.88 TF=2E-9 TR=1.2e-6 XTB=1.5 QUASIMOD=1 * *$ * *ZETEX FMMT459 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT459 NPN IS=4E-14 NF=1 BF=130 VAF=1000 ISE=4E-13 NE=1.59 +RCO=60 GAMMA=1E-7 NR=1 BR=10 VAR=100 ISC=1e-10 NC=1.6 IKR=30E-3 +RB=1 RE=.1 RC=.1 CJC=9E-12 MJC=0.36 VJC=0.51 CJE=99E-12 MJE=0.42 +VJE=0.88 TF=2E-9 TR=1.2e-6 XTB=1.5 QUASIMOD=1 * *$ * *ZETEX FMMT489 Spice Model v1.0 Last Revised 13/10/93 * .MODEL FMMT489 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * .MODEL FMMT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ *TITLE=FMMT491A *DATE=April_2019 *ORIGIN=SH, updated from FMMT491 *SIMULATOR=DIODES, SIMETRIX *VERSION=1 .MODEL FMMT491A NPN + IS=3.05E-13 NF=1.0034 BF=800 IKF=4 VAF=165 NKF=0.9 + ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=120 IKR=0.6 VAR=69 + ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF=0.71E-9 TR=2.5E-9 * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX FMMT491 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ * *TITLE=FMMT491A *DATE=April_2019 *ORIGIN=SH, updated from FMMT491 *SIMULATOR=DIODES, SIMETRIX *VERSION=1 .MODEL FMMT491A NPN + IS=3.05E-13 NF=1.0034 BF=800 IKF=4 VAF=165 NKF=0.9 + ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=120 IKR=0.6 VAR=69 + ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF=0.71E-9 TR=2.5E-9 * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL .MODEL FMMT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ *ZETEX FMMT493 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX FMMT493A Spice Model v1.0 Last Revised 30/3/06 * .MODEL FMMT493A NPN IS =6E-14 NF =0.99 BF =1100 IKF=1.1 +NK=0.7 VAF=270 ISE=0.3E-14 NE =1.26 NR =0.98 BR =70 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=8 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX FMMT493 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX FMMT494 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT494 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 NK=0.7 VAF=270 +ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 VAR=27 ISC=1.2e-13 NC =1.2 +RB =0.2 RE =0.08 RC =0.08 RCO=7.5 GAMMA=1E-8 CJC=15.9E-12 MJC=0.4 +VJC=0.51 CJE=108E-12 MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 +QUASIMOD=1 * *$ * *ZETEX FMMT494 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT494 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 NK=0.7 VAF=270 +ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 VAR=27 ISC=1.2e-13 NC =1.2 +RB =0.2 RE =0.08 RC =0.08 RCO=7.5 GAMMA=1E-8 CJC=15.9E-12 MJC=0.4 +VJC=0.51 CJE=108E-12 MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 +QUASIMOD=1 * *$ * *ZETEX FMMT495 Spice Model v1.0 Last Revised 8/5/2006 * .MODEL FMMT495 NPN IS =1E-13 NF =1 BF =205 IKF=4 VAF=300 ISE=1E-13 +NE =1.5 NR =0.98 BR =24 VAR=45 ISC=1e-13 NC =1.2 RB =.4 RE =.07 +RC =.08 RCO=17 GAMMA=9E-8 CJC=15.3E-12 MJC=0.27 VJC=0.35 CJE=114E-12 +MJE=0.33 VJE=0.68 TF =0.8E-9 TR =120e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX FMMT495 Spice Model v1.0 Last Revised 8/5/2006 * .MODEL FMMT495 NPN IS =1E-13 NF =1 BF =205 IKF=4 VAF=300 ISE=1E-13 +NE =1.5 NR =0.98 BR =24 VAR=45 ISC=1e-13 NC =1.2 RB =.4 RE =.07 +RC =.08 RCO=17 GAMMA=9E-8 CJC=15.3E-12 MJC=0.27 VJC=0.35 CJE=114E-12 +MJE=0.33 VJE=0.68 TF =0.8E-9 TR =120e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX FMMT497 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT497 NPN IS =5E-14 NF =1 +BF =250 IKF=500E-3 VAF=1020 ISE=2.5E-14 NE =1.38 +RCO=60 GAMMA=10E-7 NR =1 BR =5 IKR=0 VAR=55 ISC=5e-12 +NC =1.31 RB =3 RE =0.05 RC =0.05 QUASIMOD=1 +CJC=10.95E-12 MJC=0.265 VJC=0.3905 CJE=125.2E-12 +TF =0.6E-9 TR =0.66e-6 XTB=1.4 * *$ * *ZETEX FMMT549 Spice Model v1.0 Last Revised 11/10/94 * .MODEL FMMT549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 + ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 + ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 + CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 + MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FMMT551 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT551 PNP IS =3.2E-14 BF =120 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =35 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX FMMT555 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT555 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 +TF=0.7E-9 TR=2e-7 * *$ * *ZETEX FMMT555 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT555 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 +TF=0.7E-9 TR=2e-7 * *$ * *ZETEX FMMT558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FMMT558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 *$ * *ZETEX FMMT558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FMMT558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 *$ * *ZETEX FMMT560 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54 +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3 +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12 +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1 * *$ * *ZETEX FMMT560 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54 +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3 +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12 +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1 * *$ * *ZETEX FMMT589 Spice Model v1.0 Last Revised 11/10/94 * .MODEL FMMT589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 + ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 + ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 + CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 + MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * * .MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ *ZETEX FMMT591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX FMMT591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * * .MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ *ZETEX FMMT593 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT593 PNP IS =2E-13 NF =1 BF =300 IKF=0.8 +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 +NR =1 BR =20 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1 +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 +TF =0.8E-9 TR =70e-9 XTB=1.4 * *$ * *ZETEX FMMT593 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT593 PNP IS =2E-13 NF =1 BF =300 IKF=0.8 +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 +NR =1 BR =20 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1 +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 +TF =0.8E-9 TR =70e-9 XTB=1.4 * *$ * *ZETEX FMMT596 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT596 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 +TF=0.7E-9 TR=2e-7 * *$ * *ZETEX FMMT596 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT596 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 +TF=0.7E-9 TR=2e-7 * *$ * *ZETEX FMMT597 Spice Model v1.0 Last Revised 20/09/07 * .MODEL FMMT597 PNP IS=7E-14 NF=1 BF=155 IKF=1.4 VAF=320 ISE=6E-14 + NE=1.8 NR=1 BR=3 IKR=0.3 VAR=56 ISC=5e-13 NC=1.12 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=41 GAMMA=13E-8 CJC=20.7E-12 MJC=0.38 VJC=0.44 + CJE=126E-12 MJE=0.41 VJE=0.8 TF=1.1E-9 TR=30e-7 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * *$ * *ZETEX FMMT614 Spice Model v1.0 Last Revised 2/8/2004 * .SUBCKT FMMT614 1 2 3 * C B E Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 .ENDS FMMT614 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 * *$ * *ZETEX FMMT614 Spice Model v1.0 Last Revised 2/8/2004 * .SUBCKT FMMT614 1 2 3 * C B E Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 .ENDS FMMT614 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 * *$ * *ZETEX FMMT617 Spice Model v1.0 Last Revised 19/4/94 * .MODEL FMMT617 NPN IS =5.92E-13 BF =500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE =1.425 NR =1 BR =280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC =1.46 RB =0.1 RE =0.025 RC =0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF =1.12E-9 TR =2.15E-9 * *$ * *ZETEX FMMT618 Spice Model v1.0 Last Revised 8/7/93 * .MODEL FMMT618 NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 + ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF =0.95E-9 TR =2.25E-9 * *$ * *ZETEX FMMT618 Spice Model v1.0 Last Revised 8/7/93 * .MODEL FMMT618 NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 + ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF =0.95E-9 TR =2.25E-9 * *$ * *FMMT619 Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=09April2019 *VERSION=2 *#SIMETRIX .Model FMMT619 NPN ; ## Description ## ## Effect ## ; ## DC Forward Parameters ## + IS = 5.8032E-13 ; transport saturation current Controls Icbo and where hFE falls with high Ic + NF = 1.02 ; forward current emission coefficient + ISE = 1.5933E-13 ; base-emitter leakage saturation current Controls the fall in hFE that occurs at low Ic + NE = 1.4148 ; base-emitter leakage emission coefficient Controls Icbo and where hFE falls with high Ic. Controls the fall in hFE that occurs at low Ic + BF = 465 ; ideal maximum forward beta Controls peak forward hFE + IKF = 8 ; corner for forward-beta high-current roll-off Current where rollof occurs + NK = 0.8 ; high-current roll-off coefficient Slope of roll off + VAF = 84 ; forward Early voltage controls the variation of collector current with voltage when the transistor is operated in its linear region. ; ## DC Reverse Parameters ## + NR = 1.0006 ; reverse current emission coefficient + ISC = 5E-12 ; base-collector leakage saturation current Controls the fall of reverse hFE at low currents + NC = 1.6 ; base-collector leakage emission coefficient Controls the fall of reverse hFE at low currents + BR = 110 ; ideal maximum reverse beta Controls peak reverse hFE + IKR = 1.4 ; corner for reverse-beta high-current roll-off Current where rollof occurs + VAR = 51 ; reverse Early voltage the reverse version of VAF. ; ## DC Rb Parameters ## + RB = 14.5 ; zero-bias (maximum) base resistance + IRB = 8.00E-06 ; current at which Rb falls halfway to RBM + RBM = 0.2 ; minimum base resistance ; ## DC Re Parameters ## + RE = 0.05 ; emitter ohmic resistance ; ## DC Rc Parameters ## + RC = 0.0375 ; collector ohmic resistance ; ## AC base-emitter Parameters ## + CJE= 2.17E-10 ; base-emitter zero-bias p-n capacitance controls Cbe. + VJE = 0.75 ; base-emitter built-in potential + MJE = 0.33 ; base-emitter p-n grading factor ; ## AC base-collector Parameters ## + CJC = 4E-11 ; base-collector zero-bias p-n capacitance control Ccb and how it varies with Vcb. + VJC = 0.4347 ; base-collector built-in potential control Ccb and how it varies with Vcb. + MJC = 0.3708 ; base-collector p-n grading factor control Ccb and how it varies with Vcb. + XCJC = 1 ; fraction of CJC connected internally to Rb ; ## AC substrate Parameters ## + CJS = 0 ; substrate zero-bias p-n capacitance + VJS = 0.75 ; substrate p-n built-in potential + MJS = 0 ; substrate p-n grading factor ; ## AC Transit Time Parameters ## + TF = 780.0E-12 ; ideal forward transit time controls Ft and switching speeds. + XTF = 0 ; transit time bias dependence coefficient + VTF = 1E+20 ; transit time dependency on Vbc + ITF = 0 ; transit time dependency on Ic + PTF = 0 ; excess phase @ 1/(2p·TF)Hz + TR = 9.00E-09 ; ideal reverse transit time controls switching storage times. ; ##Temperature Parameters ## + XTB = 1.3 ; forward and reverse beta temperature coefficient controls temperature effects on hFE. Try 1.6 for NPN, 1.9 for PNP + XTI = 3 ; IS temperature effect exponent controls temperature effects on saturation current + RCO = 0 ; epitaxial region resistance + TRB1 = 0 ; RB temperature coefficient (linear) + TRB2 = 0 ; RB temperature coefficient (quadratic) + TRC1 = 0 ; RC temperature coefficient (linear) + TRC2 = 0 ; RC temperature coefficient (quadratic) + TRE1 = 0 ; RE temperature coefficient (linear) + TRE2 = 0 ; RE temperature coefficient (quadratic) + TRM1 = 0 ; RBM temperature coefficient (linear) + TRM2 = 0 ; RBM temperature coefficient (quadratic) * T_ABS = ; absolute temperature + T_MEASURED = 27 ; measured temperature * T_REL_GLOBAL = ; relative to current temperature + QUASIMOD = 1 ; quasi-saturation model flag for temperature dependence 1= Gamma, RCO, VO temp dependance 0n. 0=off. + CN = 2.42 ; quasi-saturation temperature coefficient for hole mobility defaults NPN 2.42, PNP 2.20 + D = 0.87 ; quasi-saturation temperature coefficient -hole carrier velocity defaults NPN 0.87, PNP 0.52 + FC = 0.5 ; forward-bias depletion capacitor coefficient + EG = 1.11 ; bandgap voltage (barrier height) + GAMMA = 1E-11 ; epitaxial region doping factor + ISS = 0 ; substrate p-n saturation current + NS = 1 ; substrate p-n emission coefficient + QCO = 0 ; epitaxial region charge factor ; ## Flicker Parameters ## + AF = 1 ; flicker noise exponent + KF = 0 ; flicker noise coefficient 0.0 + VG = 1.206 ; quasi-saturation extrapolated bandgap voltage at 0° K + VO = 10 ; carrier mobility knee voltage * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *FMMT619 Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=09April2019 *VERSION=2 *#SIMETRIX .Model FMMT619 NPN ; ## Description ## ## Effect ## ; ## DC Forward Parameters ## + IS = 5.8032E-13 ; transport saturation current Controls Icbo and where hFE falls with high Ic + NF = 1.02 ; forward current emission coefficient + ISE = 1.5933E-13 ; base-emitter leakage saturation current Controls the fall in hFE that occurs at low Ic + NE = 1.4148 ; base-emitter leakage emission coefficient Controls Icbo and where hFE falls with high Ic. Controls the fall in hFE that occurs at low Ic + BF = 465 ; ideal maximum forward beta Controls peak forward hFE + IKF = 8 ; corner for forward-beta high-current roll-off Current where rollof occurs + NK = 0.8 ; high-current roll-off coefficient Slope of roll off + VAF = 84 ; forward Early voltage controls the variation of collector current with voltage when the transistor is operated in its linear region. ; ## DC Reverse Parameters ## + NR = 1.0006 ; reverse current emission coefficient + ISC = 5E-12 ; base-collector leakage saturation current Controls the fall of reverse hFE at low currents + NC = 1.6 ; base-collector leakage emission coefficient Controls the fall of reverse hFE at low currents + BR = 110 ; ideal maximum reverse beta Controls peak reverse hFE + IKR = 1.4 ; corner for reverse-beta high-current roll-off Current where rollof occurs + VAR = 51 ; reverse Early voltage the reverse version of VAF. ; ## DC Rb Parameters ## + RB = 14.5 ; zero-bias (maximum) base resistance + IRB = 8.00E-06 ; current at which Rb falls halfway to RBM + RBM = 0.2 ; minimum base resistance ; ## DC Re Parameters ## + RE = 0.05 ; emitter ohmic resistance ; ## DC Rc Parameters ## + RC = 0.0375 ; collector ohmic resistance ; ## AC base-emitter Parameters ## + CJE= 2.17E-10 ; base-emitter zero-bias p-n capacitance controls Cbe. + VJE = 0.75 ; base-emitter built-in potential + MJE = 0.33 ; base-emitter p-n grading factor ; ## AC base-collector Parameters ## + CJC = 4E-11 ; base-collector zero-bias p-n capacitance control Ccb and how it varies with Vcb. + VJC = 0.4347 ; base-collector built-in potential control Ccb and how it varies with Vcb. + MJC = 0.3708 ; base-collector p-n grading factor control Ccb and how it varies with Vcb. + XCJC = 1 ; fraction of CJC connected internally to Rb ; ## AC substrate Parameters ## + CJS = 0 ; substrate zero-bias p-n capacitance + VJS = 0.75 ; substrate p-n built-in potential + MJS = 0 ; substrate p-n grading factor ; ## AC Transit Time Parameters ## + TF = 780.0E-12 ; ideal forward transit time controls Ft and switching speeds. + XTF = 0 ; transit time bias dependence coefficient + VTF = 1E+20 ; transit time dependency on Vbc + ITF = 0 ; transit time dependency on Ic + PTF = 0 ; excess phase @ 1/(2p·TF)Hz + TR = 9.00E-09 ; ideal reverse transit time controls switching storage times. ; ##Temperature Parameters ## + XTB = 1.3 ; forward and reverse beta temperature coefficient controls temperature effects on hFE. Try 1.6 for NPN, 1.9 for PNP + XTI = 3 ; IS temperature effect exponent controls temperature effects on saturation current + RCO = 0 ; epitaxial region resistance + TRB1 = 0 ; RB temperature coefficient (linear) + TRB2 = 0 ; RB temperature coefficient (quadratic) + TRC1 = 0 ; RC temperature coefficient (linear) + TRC2 = 0 ; RC temperature coefficient (quadratic) + TRE1 = 0 ; RE temperature coefficient (linear) + TRE2 = 0 ; RE temperature coefficient (quadratic) + TRM1 = 0 ; RBM temperature coefficient (linear) + TRM2 = 0 ; RBM temperature coefficient (quadratic) * T_ABS = ; absolute temperature + T_MEASURED = 27 ; measured temperature * T_REL_GLOBAL = ; relative to current temperature + QUASIMOD = 1 ; quasi-saturation model flag for temperature dependence 1= Gamma, RCO, VO temp dependance 0n. 0=off. + CN = 2.42 ; quasi-saturation temperature coefficient for hole mobility defaults NPN 2.42, PNP 2.20 + D = 0.87 ; quasi-saturation temperature coefficient -hole carrier velocity defaults NPN 0.87, PNP 0.52 + FC = 0.5 ; forward-bias depletion capacitor coefficient + EG = 1.11 ; bandgap voltage (barrier height) + GAMMA = 1E-11 ; epitaxial region doping factor + ISS = 0 ; substrate p-n saturation current + NS = 1 ; substrate p-n emission coefficient + QCO = 0 ; epitaxial region charge factor ; ## Flicker Parameters ## + AF = 1 ; flicker noise exponent + KF = 0 ; flicker noise coefficient 0.0 + VG = 1.206 ; quasi-saturation extrapolated bandgap voltage at 0° K + VO = 10 ; carrier mobility knee voltage * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX FMMT620 Spice Model v1.0 Last Revised 12/12/02 * .MODEL FMMT620 NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5 +ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12 +NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48 +MJC=0.41 TF =9E-10 TR=3.5E-8 * *$ * *ZETEX FMMT620 Spice Model v1.0 Last Revised 12/12/02 * .MODEL FMMT620 NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5 +ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12 +NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48 +MJC=0.41 TF =9E-10 TR=3.5E-8 * *$ * *ZETEX FMMT624 Spice Model v1.0 Last Revised 12/7/93 * .MODEL FMMT624 NPN IS =6.855E-13 NF =1.0037 BF =540 IKF=0.95 VAF=231 + ISE=2.23E-13 NE =1.4195 NR =1.0024 BR =100 IKR=2 + VAR=61 ISC=3E-12 NC =1.2276 RB =0.036 RE =0.065 + RC =0.1 CJC=28E-12 MJC=0.4348 VJC=0.4934 CJE=207E-12 + TF =0.85E-9 TR =49E-9 * *$ * *ZETEX FMMT625 Spice Model v1.0 Last Revised 13/7/93 * .MODEL FMMT625 NPN IS =6.2024E-13 NF =1.0037 BF =450 IKF=0.6 VAF=428 + ISE=2.3242E-13 NE =1.4689 NR =1.0033 BR =250 IKR=1.7 + VAR=73 ISC=7.66E-13 NC =1.1546 RB =0.036 RE =0.090 + RC =0.143 CJC=24.5E-12 MJC=0.4246 VJC=0.4425 CJE=210E-12 + TF =0.99E-9 TR =60E-9 * *$ * *ZETEX FMMT625 Spice Model v1.0 Last Revised 13/7/93 * .MODEL FMMT625 NPN IS =6.2024E-13 NF =1.0037 BF =450 IKF=0.6 VAF=428 + ISE=2.3242E-13 NE =1.4689 NR =1.0033 BR =250 IKR=1.7 + VAR=73 ISC=7.66E-13 NC =1.1546 RB =0.036 RE =0.090 + RC =0.143 CJC=24.5E-12 MJC=0.4246 VJC=0.4425 CJE=210E-12 + TF =0.99E-9 TR =60E-9 * *$ * *ZETEX FMMT634 Spice Model v1.0 Last Revised 17/10/97 * .SUBCKT FMMT634 1 2 3 * C B E Q1 5 2 4 SUB634 Q2 5 4 3 SUB634 4.45 R1 1 5 .27 * .MODEL SUB634 NPN IS=4.5E-14 ISE=1E-14 NF =1 NE =1.45 BF =250 IKF=.16 +RE=.09 RB=1 BR =12 IKR=.15 VAF=240 CJE=65E-12 CJC=7E-12 +VJC=.85 MJC=.45 TF =.95E-9 TR =300E-9 .ENDS FMMT634 * *$ * *ZETEX FMMT634 Spice Model v1.0 Last Revised 17/10/97 * .SUBCKT FMMT634 1 2 3 * C B E Q1 5 2 4 SUB634 Q2 5 4 3 SUB634 4.45 R1 1 5 .27 * .MODEL SUB634 NPN IS=4.5E-14 ISE=1E-14 NF =1 NE =1.45 BF =250 IKF=.16 +RE=.09 RB=1 BR =12 IKR=.15 VAF=240 CJE=65E-12 CJC=7E-12 +VJC=.85 MJC=.45 TF =.95E-9 TR =300E-9 .ENDS FMMT634 * *$ * *ZETEX FMMT6517 Spice Model v1.0 Last Revised 11/06/2007 * .MODEL FMMT6517 NPN IS=5.32E-14 NF=0.992 BF=210 IKF=0.5 VAF=1050 +XTB=1.4 ISE=2.1E-14 NE=1.385 NR=1.05 BR=16.3 IKR=1.8 VAR=99 +ISC=6.42E-12 NC=1.25 RB=0.5 RE=0.224 RC=0.134 CJC=8.5E-12 +MJC=0.3966 VJC=0.4332 CJE=122E-12 TF=1.66E-9 TR=16E-6 +QUASIMOD=1 RCO=70 GAMMA=1.6E-7 VO=10 * *$ * *ZETEX FMMT6520 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT6520 PNP IS =4E-14 NF =1.01 BF =105 +IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 +GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40 +ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1 +CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 +TF =0.7E-9 TR =1.6e-6 XTB=1.4 * *$ * *ZETEX FMMT717 Spice Model v1.0 Last Revised 25/3/94 * .MODEL FMMT717 PNP IS =5.5E-13 BF =500 IKF =3 VAF =14.93 + ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03 + RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 + TR =2E-9 * *$ * *ZETEX FMMT717 Spice Model v1.0 Last Revised 25/3/94 * .MODEL FMMT717 PNP IS =5.5E-13 BF =500 IKF =3 VAF =14.93 + ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03 + RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 + TR =2E-9 * *$ * *ZETEX FMMT718 Spice Model v1.0 Last Revised 15/12/93 * .MODEL FMMT718 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * *ZETEX FMMT718 Spice Model v1.0 Last Revised 15/12/93 * .MODEL FMMT718 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * *ZETEX FMMT720 Spice Model v2.0 Last Revised 1/5/03 * .MODEL FMMT720 PNP IS =6.261E-13 BF =500 IKF =1.4 VAF =28.4 +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 +TRC1=.0025 * *$ * *ZETEX FMMT720 Spice Model v2.0 Last Revised 1/5/03 * .MODEL FMMT720 PNP IS =6.261E-13 BF =500 IKF =1.4 VAF =28.4 +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 +TRC1=.0025 * *$ * *ZETEX FMMT722 Spice Model v1.0 Last Revised 15/12/93 * .MODEL FMMT722 PNP IS =6.348E-13 BF =450 IKF =1.25 VAF =30.24 + ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 + VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09 + RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 + CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 + TR =57E-9 * *$ * *ZETEX FMMT722 Spice Model v1.0 Last Revised 15/12/93 * .MODEL FMMT722 PNP IS =6.348E-13 BF =450 IKF =1.25 VAF =30.24 + ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 + VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09 + RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 + CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 + TR =57E-9 * *$ * *ZETEX FMMT723 Spice Model v1.0 Last Revised 15/12/93 * .MODEL FMMT723 PNP IS =5.5E-13 BF =440 IKF =1 VAF =50.88 + ISE=1.554E-13 NE =1.477 NR =1.03 BR =30 IKR=0.7 + VAR=13.79 ISC=1.3E-12 NC =1.198 RB =1.5 RE =0.02 + RC =0.14 CJC=45.74E-12 MJC=0.4889 VJC=0.711 + CJE=204.3E-12 MJE=0.5105 VJE=0.9711 TF =0.63E-9 + TR =95E-9 * *$ * *ZETEX FMMT723 Spice Model v1.0 Last Revised 15/12/93 * .MODEL FMMT723 PNP IS =5.5E-13 BF =440 IKF =1 VAF =50.88 + ISE=1.554E-13 NE =1.477 NR =1.03 BR =30 IKR=0.7 + VAR=13.79 ISC=1.3E-12 NC =1.198 RB =1.5 RE =0.02 + RC =0.14 CJC=45.74E-12 MJC=0.4889 VJC=0.711 + CJE=204.3E-12 MJE=0.5105 VJE=0.9711 TF =0.63E-9 + TR =95E-9 * *$ * *ZETEX FMMT734 Spice Model v1.0 Last Revised 29/8/2006 * .SUBCKT FMMT734 1 2 3 * C B E Q1 1 2 4 SUB734 0.4 Q2 1 4 3 SUB734 2 * .MODEL SUB734 PNP IS =2E-13 NF =1 BF =330 IKF=0.8 +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 +NR =1 BR =20 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1 +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 +TF =0.8E-9 TR =10e-9 XTB=1.4 .ENDS FMMT734 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23JUN10 *VERSION=1 * .MODEL FMMTA06 NPN IS=3.8E-14 NF=1.008 BF=150 IKF=2 VAF=300 XTB=1.4 + ISE=1E-14 NE=1.22 NR=1.015 BR=6 IKR=1.8 VAR=48 ISC=5E-13 NC=1.2 + RB=1 RE=0.155 RC=0.061 CJC=18E-12 MJC=0.31 VJC=0.45 CJE=65E-12 + MJE=0.34 VJE=0.7 TF=8E-10 TR=6E-7 QUASIMOD=1 RCO=17 GAMMA=1E-7 VO=20 * *$ *ZETEX FMMTA13 Spice Model v1.1 Last Revised 6/1/03 * .SUBCKT FMMTA13 1 2 3 * C B E Q1 1 2 4 SUB38B Q2 1 4 3 SUB38B 12.75 * .MODEL SUB38B NPN IS =1.1E-14 ISE=7.1E-15 NF =1.012 NE =1.4758 +BF =147 IKF=.12 BR =15 IKR=.05 RE =1.3 RC =.5 RB =.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF =1.15E-9 TR =75E-9 .ENDS FMMTA13 * *$ * *ZETEX FMMTA14 Spice Model v1.0 Last Revised 12/6/2002 * .SUBCKT FMMTA14 1 2 3 * C B E Q1 1 2 4 SUB38C Q2 1 4 3 SUB38C 12.75 * .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9 .ENDS FMMTA14 * *$ * *ZETEX FMMTA42 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3 +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7 +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 +RB =7 RE =0.07 RC =0.07 QUASIMOD=1 +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 +TF =1.1E-9 TR =0.9e-6 XTB=1.4 * *$ * *ZETEX FMMTA42 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3 +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7 +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 +RB =7 RE =0.07 RC =0.07 QUASIMOD=1 +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 +TF =1.1E-9 TR =0.9e-6 XTB=1.4 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=1 * .MODEL FMMTA56 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ *ZETEX FMMTA92 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMTA92 PNP IS =4E-14 NF =1.01 BF =105 +IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 +GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40 +ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1 +CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 +TF =0.7E-9 TR =1.6e-6 XTB=1.4 * *$ * *ZETEX FMMTA92 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMTA92 PNP IS =4E-14 NF =1.01 BF =105 +IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 +GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40 +ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1 +CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 +TF =0.7E-9 TR =1.6e-6 XTB=1.4 * *$ * *ZETEX FMMTL618 Spice Model v1.0 Last Revised 25/06/98 * .MODEL FMMTL618 NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13 +NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5 +RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9 +TR =30e-9 * *$ * *ZETEX FMMTL717 Spice Model v1.0 Last Revised 28/6/00 * .MODEL FMMTL717 PNP IS=3E-13 NF=1 BF=450 IKF=1 VAF=17 +ISE=5E-14 NE=1.6 NR=1 BR=80 VAR=7 ISC=5e-14 NC=1.45 +RB=1.2 RE=0.076 RC=0.076 +CJC=62.5E-12 MJC=0.51 VJC=0.559 CJE=102E-12 +TF =0.68E-9 TR =2e-9 * *$ * *ZETEX FMMTL717 Spice Model v1.0 Last Revised 28/6/00 * .MODEL FMMTL717 PNP IS=3E-13 NF=1 BF=450 IKF=1 VAF=17 +ISE=5E-14 NE=1.6 NR=1 BR=80 VAR=7 ISC=5e-14 NC=1.45 +RB=1.2 RE=0.076 RC=0.076 +CJC=62.5E-12 MJC=0.51 VJC=0.559 CJE=102E-12 +TF =0.68E-9 TR =2e-9 * *$ * *ZETEX FMMTL718 Spice Model v1.0 Last Revised 7/8/00 * .MODEL FMMTL718 PNP IS=2e-13 BF=550 XTB=1.4 +NF=1 VAF=21 IKF=0.25 ISE=1e-13 NE=1.38 BR=55 +NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 +RE=0.06 RB=0.7 RC=0.06 +CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 +VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 * *$ * *ZETEX FZT1047A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1047A NPN IS=9.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=400 IKR=5 VAR=15 + ISC=8E-13 NC=1.4 RB=0.1 RE=0.017 RC=0.010 + CJC=195.4E-12 CJE=540.4E-12 MJC=0.257 MJE=0.359 + VJC=0.390 VJE=0.753 TF=450E-12 TR=1.2E-9 * *$ * *ZETEX FZT1048A Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT1048A NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15 + ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010 + CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299 + VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9 * *$ * *ZETEX FZT1049A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1049A NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 + ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 + CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36 + VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9 * *$ * *ZETEX FZT1051A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * *ZETEX FZT1053A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * *ZETEX FZT1053A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * *ZETEX FZT1147A Spice Model v1.0 Last Revised 10/12/96 * .MODEL FZT1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 BF=500 + VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 BR=90 VAR=3.1 + IKR=1.2 RE=15e-3 RB=145e-3 RC=13e-3 CJE=560e-12 + CJC=255e-12 VJC=0.6288 MJC=0.4048 TF=1.2e-9 TR=13e-9 * *$ * *ZETEX FZT1149A Spice Model v1.0 Last Revised 10/1/97 * .MODEL FZT1149A PNP IS=9.5e-13 NF=1.002 ISE=1.2e-13 NE=1.4 BF=520 + VAF=24.97 IKF=5 NR=0.997 ISC=4.5E-13 NC=1.25 BR=40 + VAR=2.51 IKR=0.7 RE=20e-3 RB=150e-3 RC=10e-3 + CJE=490e-12 CJC=150e-12 VJC=1.094 MJC=0.4739 + TF=1e-9 TR=3.5e-9 * *$ * *ZETEX FZT1151A Spice Model v1.0 Last Revised 12/12/96 * .MODEL FZT1151A PNP IS=1.7e-12 NF=1.004 ISE=1.02e-13 NE=1.55 BF=562 + VAF=26.01 IKF=3.5 NR=.97 ISC=1.5e-13 NC=1.3 BR=38 + VAR=2.41 IKR=0.3 RE=25.37e-3 RB=250e-3 RC=25e-3 + CJE=440e-12 CJC=160e-12 VJC=1.058 MJC=0.5678 + TF=0.8e-9 TR=55.5e-9 * *$ * *ZETEX FZT458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FZT458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * *ZETEX FZT458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FZT458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * *ZETEX FZT489 Spice Model v1.0 Last Revised 11/11/04 * .MODEL FZT489 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * *ZETEX FZT489 Spice Model v1.0 Last Revised 11/11/04 * .MODEL FZT489 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * .MODEL FZT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ *ZETEX FZT491A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT491A NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF =0.71E-9 TR =2.5E-9 * *$ * *ZETEX FZT491A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT491A NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF =0.71E-9 TR =2.5E-9 * *$ * *ZETEX FZT493 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX FZT549 Spice Model v1.0 Last Revised 26/01/05 * .MODEL FZT549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FZT558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FZT558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ * *ZETEX FZT560 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54 +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3 +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12 +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1 * *$ * *ZETEX FZT589 Spice Model v1.0 Last Revised 26/01/05 * .MODEL FZT589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * .MODEL FZT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ *ZETEX FZT591A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT591A PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FZT591A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT591A PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX FZT600 Spice Model v1.0 Last Revised 23/12/04 * .SUBCKT FZT600 1 2 3 * C B E Q1 1 2 4 SUB600 Q2 1 4 3 SUB600 2.74 * .MODEL SUB600 NPN IS=8.354E-14 BF=70 VAF=18.3 IKF=0.25 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 +MJC=0.3607 TF=1E-9 TR=1800E-9 .ENDS FZT600 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JAN2011 *VERSION=1 *PINS C B E * .SUBCKT FZT600B 1 2 3 Q1 1 2 4 SUB601B Q2 1 4 3 SUB601B 2.74 * .MODEL SUB601B NPN IS=8.354E-14 BF=130 VAF=18.3 IKF=0.2 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 MJC=0.3607 +TF=1E-9 TR=1800E-9 .ENDS * *$ *ZETEX FZT603 Spice Model v1.0 Last Revised 1/7/03 * .SUBCKT FZT603 1 2 3 * C B E Q1 1 2 4 SUB603 Q2 1 4 3 SUB603 3.46 * .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13 +NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3 +RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9 +XTB=1.5 .ENDS * *$ * *ZETEX FZT603 Spice Model v1.0 Last Revised 1/7/03 * .SUBCKT FZT603 1 2 3 * C B E Q1 1 2 4 SUB603 Q2 1 4 3 SUB603 3.46 * .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13 +NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3 +RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9 +XTB=1.5 .ENDS * *$ * *ZETEX FZT605 Spice Model v1.0 Last Revised 27/04/05 * .SUBCKT FZT605 1 2 3 * C B E Q1 1 2 4 SUB605 Q2 1 4 3 SUB605 3.46 * .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS FZT605 * *$ * *ZETEX FZT649 Spice Model v1.0 Last Revised 17/7/90 * .MODEL FZT649 NPN IS =3E-13 BF =225 VAF=80 IKF=2.8 ISE=1.1E-13 NE =1.37 +BR =110 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.3 RE =.063 +RC =.07 CJE=325E-12 TF =1E-9 CJC=70E-12 TR =10E-9 * *$ * *ZETEX FZT651 Spice Model v1.0 Last Revised 16/1/91 * .MODEL FZT651 NPN IS =2.218E-13 NF =.9956 BF =230 IKF=2 VAF=100 ISE=2.9E-14 +NE =1.35 NR =.995 BR =56 IKR=1 VAR=30 ISC=2.971E-13 NC =1.321 RB =.04 +RE =.075 RC =.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF =.77E-9 +TR =27E-9 * *$ * *ZETEX FZT651 Spice Model v1.0 Last Revised 16/1/91 * .MODEL FZT651 NPN IS =2.218E-13 NF =.9956 BF =230 IKF=2 VAF=100 ISE=2.9E-14 +NE =1.35 NR =.995 BR =56 IKR=1 VAR=30 ISC=2.971E-13 NC =1.321 RB =.04 +RE =.075 RC =.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF =.77E-9 +TR =27E-9 * *$ * *ZETEX FZT653 Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT653 NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 + ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 + CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 + TF =0.78E-9 TR =30E-9 * *$ * *ZETEX FZT653 Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT653 NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 + ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 + CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 + TF =0.78E-9 TR =30E-9 * *$ * *ZETEX FZT655 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT655 NPN IS=3.2E-13 NF=1.0041 BF=200 IKF=2 VAF=85 RCO=4 +GAMMA=5E-9 ISE=1.5E-13 NE =1.26 NR=1.0008 BR=20 VAR=51 ISC=6E-14 +NC=1.079 RB =0.1 RE =0.045 CJC=65E-12 MJC=0.4896 VJC=0.7676 +CJE=350E-12 TF=1.5E-9 TR=3E-7 XTB=1.4 QUASIMOD=1 * *$ * *ZETEX FZT657 Spice Model v1.0 Last Revised 25/7/05 * .MODEL FZT657 NPN IS=2.3E-13 NF=1.003 BF=150 IKF=1.35 +VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE =1.33 NR=1.001 +BR=8 VAR=43 ISC=1.8E-13 NC=1.19 RC=0.085 RB =0.35 RE =0.2 +CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7 +XTB=1.4 QUASIMOD=1 * *$ * *ZETEX FZT657 Spice Model v1.0 Last Revised 25/7/05 * .MODEL FZT657 NPN IS=2.3E-13 NF=1.003 BF=150 IKF=1.35 +VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE =1.33 NR=1.001 +BR=8 VAR=43 ISC=1.8E-13 NC=1.19 RC=0.085 RB =0.35 RE =0.2 +CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7 +XTB=1.4 QUASIMOD=1 * *$ * *ZETEX FZT658 Spice Model v2.0 Last Revised 21/1/05 * .MODEL FZT658 NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154 +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48 +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36 +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55 +QUASIMOD=1 RCO=38 GAMMA=20E-8 * *$ * *ZETEX FZT688B Spice Model v1.0 Last Revised 8/11/90 * .MODEL FZT688B NPN IS =1.09E-12 NF =0.9935 BF =1180 IKF=5.2 VAF=25 +ISE=1.3E-13 NE =1.35 NR =0.992 BR =790 IKR=.5 VAR=5 ISC=0.174E-12 +NC =1.399 RB =.3 RE =.036 RC =.034 CJC=104E-12 MJC=.29 VJC=.46 +CJE=280E-12 TF =.93E-9 TR =1.05E-9 * *$ * *ZETEX FZT689B Spice Model v1.1 Last Revised 12/10/04 * .MODEL FZT689B NPN IS =1.8E-12 NF =0.994 BF =1500 IKF=3.2 VAF=24 +ISE=.218E-12 NE =1.345 NR =0.996 BR =310 IKR=.8 VAR=4 ISC=0.36E-12 +NC =1.26 RB =.2 RE =.035 RC =.036 CJC=74E-12 MJC=.35 VJC=.485 +CJE=248E-12 TF =0.72E-9 TR =4.9E-9 XTB=1.13 TRE1=4E-3 ITF=5e-3 * *$ * *ZETEX FZT690B Spice Model v2.0 Last revision 12/07/07 * .MODEL FZT690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX FZT690B Spice Model v2.0 Last revision 12/07/07 * .MODEL FZT690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX FZT692B Spice Model v1.0 Last Revised 31/10/90 * .MODEL FZT692B NPN IS =1.87E-12 NF =.9983 BF =1400 IKF=0.73 VAF=29 +ISE=.21E-12 NE =1.378 NR =.997 BR =68 IKR=.55 VAR=12 ISC=.44E-12 +NC =1.14 RB =.2 RE =.05 RC =.048 CJC=42.5E-12 MJC=.475 VJC=.625 +CJE=233E-12 TF =.77E-9 TR =39E-9 *Note: This Model may be inaccurate for collector currents above 1.5A. * *$ * *ZETEX FZT692B Spice Model v1.0 Last Revised 31/10/90 * .MODEL FZT692B NPN IS =1.87E-12 NF =.9983 BF =1400 IKF=0.73 VAF=29 +ISE=.21E-12 NE =1.378 NR =.997 BR =68 IKR=.55 VAR=12 ISC=.44E-12 +NC =1.14 RB =.2 RE =.05 RC =.048 CJC=42.5E-12 MJC=.475 VJC=.625 +CJE=233E-12 TF =.77E-9 TR =39E-9 *Note: This Model may be inaccurate for collector currents above 1.5A. * *$ * *ZETEX FZT694B Spice Model v1.0 Last Revised 1/11/90 * .MODEL FZT694B NPN IS =1.59E-12 NF =1.001 BF =1009 IKF=0.26 VAF=45 +ISE=.253E-12 NE =1.445 NR =1 BR =40 IKR=1 VAR=30 ISC=0.326E-12 +NC =1.075 RB =0.2 RE =0.065 RC =0.075 CJC=35.5E-12 MJC=.465 +VJC=.515 CJE=258E-12 TF =.763E-9 TR =130E-9 *Note: This Model may be inaccurate for collector currents above 0.6A. * *$ * *ZETEX FZT696B Spice Model v2.0 Last Revised 25/1/05 * .MODEL FZT696B NPN IS =.98476E-12 NF =.999 BF =705 IKF=0.8 VAF=235 +ISE=8.1E-14 NE =1.36 NR =1.002 BR =20 IKR=.8 VAR=26 ISC=.66E-12 +NC =1.15 RB =.07 RE =.125 RC =.098 CJC=25.4E-12 MJC=.47 VJC=.445 +CJE=270E-12 TF =1.301E-9 TR =690E-9 XTB=1.4 +QUASIMOD=1 RCO=24 GAMMA=75E-8 * *$ * *ZETEX FZT705 Spice Model v1.0 Last Revised 9/8/90 * .SUBCKT FZT705 1 2 3 * C B E Q1 1 2 4 SUB704 Q2 1 4 3 SUB704 4 * .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817 +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595 .ENDS FZT705 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JAN2011 *VERSION=1 *PINS C B E * .SUBCKT FZT7053 1 2 3 Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 .ENDS *$ *ZETEX FZT705 Spice Model v1.0 Last Revised 9/8/90 * .SUBCKT FZT705 1 2 3 * C B E Q1 1 2 4 SUB704 Q2 1 4 3 SUB704 4 * .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817 +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595 .ENDS FZT705 * *$ * *ZETEX FZT717 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FZT717 PNP IS =5.5E-13 BF =500 IKF =3 VAF =14.93 + ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03 + RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 + TR =2E-9 * *$ * *ZETEX FZT749 Spice Model v1.0 Last Revised 17/7/90 * .MODEL FZT749 PNP IS =2.6E-13 BF =210 VAF=27 IKF=7 ISE=1.2E-13 NE =1.43 BR =70 +VAR=14 IKR=.6 ISC=12.04E-13 NC =1.4474 NF =.999 NR =.982 RB =.3 RE =.065 +RC =.04 CJE=410E-12 TF =.65E-9 CJC=140E-12 TR =12E-9 MJC=.35 VJC=.305 * *$ * *ZETEX FZT749 Spice Model v1.0 Last Revised 17/7/90 * .MODEL FZT749 PNP IS =2.6E-13 BF =210 VAF=27 IKF=7 ISE=1.2E-13 NE =1.43 BR =70 +VAR=14 IKR=.6 ISC=12.04E-13 NC =1.4474 NF =.999 NR =.982 RB =.3 RE =.065 +RC =.04 CJE=410E-12 TF =.65E-9 CJC=140E-12 TR =12E-9 MJC=.35 VJC=.305 * *$ * *ZETEX FZT751 Spice Model v1.0 Last Revised 23/1/91 * .MODEL FZT751 PNP IS =2.715E-13 BF =170 VAF=70 NF =1.004 IKF=2.75 ISE=1E-13 +NE =1.535 BR =23 VAR=40 NR =1.005 IKR=.55 ISC=5.15E-14 NC =1.13 RB =.07 +RE =.065 RC =.085 CJE=360E-12 TF =.94E-9 CJC=90E-12 TR =60E-9 VJC=.705 +MJC=.46 * *$ * *ZETEX FZT751 Spice Model v1.0 Last Revised 23/1/91 * .MODEL FZT751 PNP IS =2.715E-13 BF =170 VAF=70 NF =1.004 IKF=2.75 ISE=1E-13 +NE =1.535 BR =23 VAR=40 NR =1.005 IKR=.55 ISC=5.15E-14 NC =1.13 RB =.07 +RE =.065 RC =.085 CJE=360E-12 TF =.94E-9 CJC=90E-12 TR =60E-9 VJC=.705 +MJC=.46 * *$ * *ZETEX FZT753 Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT753 PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76 + ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 + ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 + CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 + TF =0.86E-9 TR =24E-9 * *$ * *ZETEX FZT753 Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT753 PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76 + ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 + ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 + CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 + TF =0.86E-9 TR =24E-9 * *$ * *ZETEX FZT755 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT755 PNP IS =3.2E-13 NF =1.0041 BF =150 IKF=1.6 VAF=85 +RCO=5 GAMMA=5E-9 ISE=8E-14 NE =1.57 NR =1.0008 BR =20 IKR=0.45 VAR=51 +ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 CJC=65E-12 MJC=0.4896 +VJC=0.7676 CJE=350E-12 TF =1.5E-9 TR =3E-7 XTB=1.4 QUASIMOD=1 *$ * *ZETEX FZT757 Spice Model v3.0 Last Revised 24/2/05 * .MODEL FZT757 PNP IS =1.305E-13 NF =1.0004 BF =120 IKF=.5 VAF=1060 +ISE=7.5E-13 NE =1.5 RCO=15 GAMMA=5E-8 NR =1 ISC=2E-13 NC =1.8 +VAR=50 BR =3.2 IKR=.5 RB =.1 RE =.19 RC =.2 CJC=48E-12 MJC=.56 +VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6 +TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1 * *$ * *ZETEX FZT758 Spice Model v2.0 Last Revised 14/6/04 * .MODEL FZT758 PNP IS =1.305E-13 NF =1.0004 BF =150 VAF=350 +ISE=7.5E-13 NE =1.5 RCO=20 GAMMA=2.5E-8 QUASIMOD=1 NR =1 +ISC=2E-13 NC =1.8 VAR=30 BR =2.5 RB =.1 RE =.01 RC =.01 +CJC=58E-12 MJC=.56 VJC=.775 CJE=404E-12 TF =1E-9 TR =1200E-9 +XTB=1.7 * *$ * *ZETEX FZT788B Spice Model v1.0 Last Revised 2/1/92 * .MODEL FZT788B PNP IS=1.252E-12 NF=1.0119 BF=770 IKF=2.6 VAF=11 +ISE=1.3185E-13 NE=1.4832 NR=1.0047 BR=350 IKR=0.32 VAR=10.5 +ISC=5.2648E-14 NC=1.186 RB=0.053 RE=0.031 RC=0.044 CJC=137E-12 +MJC=0.34 VJC=0.275 CJE=280E-12 TF=0.75E-9 TR=2.3E-9 * *$ * *ZETEX FZT789A Spice Model v1.0 Last Revised 3/1/92 * .MODEL FZT789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5 +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14 +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26 +CJE=300E-12 TF=0.73E-9 TR=4.2E-9 * *$ * *ZETEX FZT789A Spice Model v1.0 Last Revised 3/1/92 * .MODEL FZT789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5 +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14 +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26 +CJE=300E-12 TF=0.73E-9 TR=4.2E-9 * *$ * *ZETEX FZT790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL FZT790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX FZT792A Spice Model v1.0 Last Revised 7/1/92 * .MODEL FZT792A PNP IS=5.98255E-13 NF=1.0022 BF=525 IKF=1.25 VAF=30 +ISE=1.45E-13 NE=1.54 NR=0.995 BR=75 IKR=0.4 VAR=34 ISC=1.58913E-13 +NC=1.03943 RB=0.06 RE=0.059 RC=0.08 CJC=90E-12 MJC=0.5 VJC=0.71 +CJE=286E-12 TF=0.75E-9 TR=93.75E-9 *Note, The Model may be inaccurate for collector currents above 1.2A. * *$ * *ZETEX FZT795A Spice Model v1.0 Last revision 16/09/05 * .MODEL FZT795A PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14 +NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45 +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 +TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +RCO=4.3 GAMMA=0.5E-7 * *$ * *ZETEX FZT795A Spice Model v1.0 Last revision 16/09/05 * .MODEL FZT795A PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14 +NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45 +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 +TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +RCO=4.3 GAMMA=0.5E-7 * *$ * *ZETEX FZT796A Spice Model v2.0 Last Revised 24/1/05 * .MODEL FZT796A PNP IS=7E-13 NF=1.005 BF=450 IKF=2 VAF=450 ISE=1E-14 +NE=1.4 NR=1 BR=6.5 VAR=48 ISC=4.1E-13 IKR=0.4 NC=1.07 RB=0.05 +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 TF=0.83E-9 +TR=130E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=13 GAMMA=2E-7 * *$ * *ZETEX FZT849 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT849 NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90 + ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 + VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 + RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 + CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9 * *$ * *ZETEX FZT851 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT851 NPN IS =1.0085E-12 NF =1.0001 BF =240 IKF=5.1 VAF=158 + ISE=2E-13 NE =1.38 NR =0.9988 BR =110 IKR=5.5 VAR=46 + ISC=4.6515E-13 NC =1.334 RB =0.025 RE =0.018 RC =0.015 + CJC=155E-12 MJC=0.4348 VJC=0.6477 CJE=1.05E-9 + TF =0.79E-9 TR =24E-9 * *$ * *ZETEX FZT851 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT851 NPN IS =1.0085E-12 NF =1.0001 BF =240 IKF=5.1 VAF=158 + ISE=2E-13 NE =1.38 NR =0.9988 BR =110 IKR=5.5 VAR=46 + ISC=4.6515E-13 NC =1.334 RB =0.025 RE =0.018 RC =0.015 + CJC=155E-12 MJC=0.4348 VJC=0.6477 CJE=1.05E-9 + TF =0.79E-9 TR =24E-9 * *$ * *ZETEX FZT853 Spice Model v1.0 Last Revised 4/12/2001 * .MODEL FZT853 NPN IS =8E-13 NF =0.99 BF =240 IKF=1.4 VAF=200 +ISE=4E-13 NE =1.27 NR =0.99 BR =90 IKR=1.4 VAR=46 ISC=100E-12 +NC =1.65 CJC=127E-12 MJC=0.46 VJC=.65 CJE=1.07E-9 RB=.3 RC=.014 +RE=.014 TF =0.9E-9 TR =20e-9 * *$ * *ZETEX FZT855 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT855 NPN IS =7.5E-13 BF =240 NF=0.995 VAF=350 ISE=4E-13 +NE=1.42 GAMMA=8E-8 RCO=2 XTB=1.4 BR=27 NR=1.0015 VAR=140 ISC=8E-12 +NC=1.3 RB=0.15 RE=0.018 RC=0.018 CJE=4.2E-10 CJC=6.6E-11 VJC=0.48 +MJC=0.41 TF =1.5E-9 TR=18E-8 QUASIMOD=1 * *$ * *ZETEX FZT857 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL FZT857 NPN IS=2E-12 NF=1.006 BF=226 IKF=5 VAF=595 ISE=3.6E-13 +NE=1.4088 NR=1.01 BR=40 IKR=94m VAR=33.5 ISC=1.502E-12 NC=1.067 +RB=.02 RE=.055 RC=.02 CJC=63E-12 MJC=.505 VJC=.491 CJE=1.1E-9 +TF=1.3E-9 TR=1.75E-6 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +VO=10 RCO=2.5 GAMMA=6E-8 * *$ * *ZETEX FZT857 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL FZT857 NPN IS=2E-12 NF=1.006 BF=226 IKF=5 VAF=595 ISE=3.6E-13 +NE=1.4088 NR=1.01 BR=40 IKR=94m VAR=33.5 ISC=1.502E-12 NC=1.067 +RB=.02 RE=.055 RC=.02 CJC=63E-12 MJC=.505 VJC=.491 CJE=1.1E-9 +TF=1.3E-9 TR=1.75E-6 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +VO=10 RCO=2.5 GAMMA=6E-8 * *$ * *ZETEX FZT869 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT869 NPN IS =1.9E-12 BF =600 IKF=9 VAF=40 + ISE=3.752E-13 NE =1.399 NR =1 BR =370 IKR=6 + VAR=18 ISC=4.135E-13 NC =1.384 RB =1 RBM =0.01 + IRB =1 RE = 0.01 RC =0.02 CJC=215E-12 MJC=0.3917 + VJC=0.5871 CJE=910.3E-12 MJE=0.3826 VJE=0.7686 + TF =1.15E-9 TR =4.01E-9 * *$ * *ZETEX FZT948 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT948 PNP IS=1.5554E-12 NF=1.013 BF=208 IKF=14.7 VAF=22.4 +ISE=1.48E-13 NE=1.485 NR=1.004 BR=140 IKR=1.34 VAR=15.4 +ISC=1.3946E-11 NC=1.702 RB=0.020 RE=0.0177 RC=0.015 CJC=440E-12 +MJC=0.3604 VJC=0.685 CJE=1.23E-9 TF=1.38E-9 TR=4.8E-9 * *$ * *ZETEX FZT949 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT949 PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7 +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12 +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9 * *$ * *ZETEX FZT949 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT949 PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7 +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12 +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9 * *$ * *ZETEX FZT951 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT951 PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3 +ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12 +NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 +VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9 * *$ * *ZETEX FZT951 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT951 PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3 +ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12 +NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 +VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9 * *$ * *ZETEX FZT953 Spice Model v1.1 Last Revised 24/4/03 * .MODEL FZT953 PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55 +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12 +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286 +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX FZT953 Spice Model v1.1 Last Revised 24/4/03 * .MODEL FZT953 PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55 +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12 +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286 +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX FZT955 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT955 PNP IS =6E-13 BF =150 NF=1 VAF=40 ISE=4E-13 +NE=1.42 GAMMA=1E-8 RCO=1 XTB=1.4 BR=21 NR=1.0015 VAR=19 ISC=8E-12 +NC=1.3 RB=0.15 RE=0.023 RC=0.018 CJE=1190E-12 VJE=0.92 MJE=0.44 +CJC=216E-12 VJC=0.87 MJC=0.54 TF =9E-10 TR=11E-8 QUASIMOD=1 * *$ * *ZETEX FZT956 Spice Model v3.0 Last Revised 24/2/05 * .MODEL FZT956 PNP IS =3E-12 BF =215 NF=1 VAF=86 IKF=2 ISE=6.5E-13 +NE=1.58 GAMMA=1E-8 RCO=1.4 XTB=1.4 BR=18 NR=1 VAR=59 ISC=6E-12 +NC=1.6 RB=0.05 RE=0.02 RC=0.01 CJC=191E-12 MJC=0.5535 VJC=0.8577 +CJE=1.08E-9 TF=0.895E-9 TR=118E-9 QUASIMOD=1 * *$ * *ZETEX FZT956 Spice Model v3.0 Last Revised 24/2/05 * .MODEL FZT956 PNP IS =3E-12 BF =215 NF=1 VAF=86 IKF=2 ISE=6.5E-13 +NE=1.58 GAMMA=1E-8 RCO=1.4 XTB=1.4 BR=18 NR=1 VAR=59 ISC=6E-12 +NC=1.6 RB=0.05 RE=0.02 RC=0.01 CJC=191E-12 MJC=0.5535 VJC=0.8577 +CJE=1.08E-9 TF=0.895E-9 TR=118E-9 QUASIMOD=1 * *$ * *ZETEX FZT957 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL FZT957 PNP IS=1.3152E-12 NF=1.0106 BF=215 IKF=4 VAF=325 +ISE=5.5E-13 NE=1.524 NR=1.0104 BR=8 IKR=0.63 VAR=110 ISC=6E-12 +NC=1.8 RB=0.25 RE=0.07 RC=0.07 CJC=140E-12 MJC=0.5432 VJC=0.7592 +CJE=1.1E-9 TF=1.23E-9 TR=560E-9 XTB=1.4 TRB1=.005 TRE1=.005 +QUASIMOD=1 VO=10 RCO=6.5 GAMMA=0.8E-7 * *$ * *ZETEX FZT957 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL FZT957 PNP IS=1.3152E-12 NF=1.0106 BF=215 IKF=4 VAF=325 +ISE=5.5E-13 NE=1.524 NR=1.0104 BR=8 IKR=0.63 VAR=110 ISC=6E-12 +NC=1.8 RB=0.25 RE=0.07 RC=0.07 CJC=140E-12 MJC=0.5432 VJC=0.7592 +CJE=1.1E-9 TF=1.23E-9 TR=560E-9 XTB=1.4 TRB1=.005 TRE1=.005 +QUASIMOD=1 VO=10 RCO=6.5 GAMMA=0.8E-7 * *$ * *ZETEX FZT968 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT968 PNP IS=3.58E-12 NF=1.015 BF=500 IKF=11 VAF=11.4 +ISE=1.576E-13 NE=1.42 NR=1.01 BR=245 IKR=1.4 VAR=8.4 ISC=1.48E-11 +NC=1.637 RB=0.024 RE=0.0164 RC=0.0235 CJC=438E-12 MJC=0.361 +VJC=0.673 CJE=1.05E-9 TF=1.38E-9 TR=2.3E-9 * *$ * *ZETEX FZTA14 Spice Model v1.0 Last revision 25/11/2005 * .SUBCKT FZTA14 1 2 3 * C B E Q1 1 2 4 SUB38C Q2 1 4 3 SUB38C 12.75 * .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9 .ENDS FZTA14 * *$ * * .MODEL FZTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3 +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7 +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 +RB =7 RE =0.07 RC =0.07 QUASIMOD=1 +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 +TF =1.1E-9 TR =0.9e-6 XTB=1.4 * *$ *SRC=GBJ15005;DI_GBJ15005;Diodes;Si; 50.0V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ15005 D ( IS=5.11u RS=3.43m BV=50.0 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1501;DI_GBJ1501;Diodes;Si; 100V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1501 D ( IS=5.11u RS=3.43m BV=100 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1502;DI_GBJ1502;Diodes;Si; 200V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1502 D ( IS=5.11u RS=3.43m BV=200 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1504;DI_GBJ1504;Diodes;Si; 400V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1504 D ( IS=5.11u RS=3.43m BV=400 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1506;DI_GBJ1506;Diodes;Si; 600V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1506 D ( IS=5.11u RS=3.43m BV=600 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1508;DI_GBJ1508;Diodes;Si; 800V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1508 D ( IS=5.11u RS=3.43m BV=800 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1510;DI_GBJ1510;Diodes;Si; 1.00kV 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1510 D ( IS=5.11u RS=3.43m BV=1.00k IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ20005;DI_GBJ20005;Diodes;Si; 50.0V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ20005 D ( IS=15.1u RS=2.96m BV=50.0 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2001;DI_GBJ2001;Diodes;Si; 100V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2001 D ( IS=15.1u RS=2.96m BV=100 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2002;DI_GBJ2002;Diodes;Si; 200V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2002 D ( IS=15.1u RS=2.96m BV=200 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2004;DI_GBJ2004;Diodes;Si; 400V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2004 D ( IS=15.1u RS=2.96m BV=400 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2006;DI_GBJ2006;Diodes;Si; 600V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2006 D ( IS=15.1u RS=2.96m BV=600 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2008;DI_GBJ2008;Diodes;Si; 800V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2008 D ( IS=15.1u RS=2.96m BV=800 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2010;DI_GBJ2010;Diodes;Si; 1.00kV 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2010 D ( IS=15.1u RS=2.96m BV=1.00k IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2510;DI_GBJ2510;Diodes;Si; 1.00kV 25.0A 3.00us Diodes Inc. Bridge Rectifier--Per Element .MODEL DI_GBJ2510 D ( IS=379n RS=2.84m BV=1.00k IBV=10.0u + CJO=146p M=0.333 N=2.07 TT=4.32u ) *SRC=GBU1002;DI_GBU1002;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. Bridge Rectifier -- Per Element .MODEL DI_GBU1002 D ( IS=1.71f RS=7.00m BV=200 IBV=5.00u + CJO=133p M=0.333 N=0.900 TT=4.32u ) *SRC=GBU1010;DI_GBU1010;Diodes;Si; 1000V 10.0A 3.00us Diodes Inc. Bridge Rectifier -- Per Element .MODEL DI_GBU1010 D ( IS=1.71f RS=7.00m BV=1000 IBV=5.00u + CJO=133p M=0.333 N=0.900 TT=4.32u ) .ENDS* *SRC=GBU4005;DI_GBU4005;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU4005 D ( IS=23.3n RS=7.20m BV=50.0 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU401;DI_GBU401;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU401 D ( IS=23.3n RS=7.20m BV=100 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU402;DI_GBU402;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU402 D ( IS=23.3n RS=7.20m BV=200 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU404;DI_GBU404;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU404 D ( IS=23.3n RS=7.20m BV=400 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU406;DI_GBU406;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU406 D ( IS=23.3n RS=7.20m BV=600 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU408;DI_GBU408;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU408 D ( IS=23.3n RS=7.20m BV=800 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU410;DI_GBU410;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU410 D ( IS=23.3n RS=7.20m BV=1.00k IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) *SRC=GBU8005;DI_GBU8005;Diodes;Si; 50.0V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU8005 D ( IS=17.8p RS=7.59m BV=50.0 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU801;DI_GBU801;Diodes;Si; 100V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU801 D ( IS=17.8p RS=7.59m BV=100 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU802;DI_GBU802;Diodes;Si; 200V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU802 D ( IS=17.8p RS=7.59m BV=200 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU804;DI_GBU804;Diodes;Si; 400V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU804 D ( IS=17.8p RS=7.59m BV=400 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU806;DI_GBU806;Diodes;Si; 600V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU806 D ( IS=17.8p RS=7.59m BV=600 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU808;DI_GBU808;Diodes;Si; 800V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU808 D ( IS=17.8p RS=7.59m BV=800 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) *SRC=GBU810;DI_GBU810;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU810 D ( IS=17.8p RS=7.59m BV=1.00k IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=7/8/2021 *VERSION=1 .SUBCKT GDZ10LP3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.7 .MODEL DF D ( IS=17.4n RS=1.224 N=1.8 + CJO=100p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=0.423f RS=8.449 N=0.491 ) .ENDS .ENDS * (c) 2018 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=7/20/2021 *VERSION=1 .SUBCKT GDZ15LP3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.5 .MODEL DF D ( IS=17.4n RS=1.224 N=1.8 + CJO=100p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=0.423f RS=8.449 N=0.491 ) .ENDS .ENDS * (c) 2018 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=7/25/2018 *VERSION=1 .model GDZ20LP3 D(IS=.0002n RS=60 CJO=1000p M=0.5 VJ=0.4 N=1.2 IKF=30m ISR=.0002u BV=20 IBV=8000 TT=40n EG=1.2 TRS1=.01m) .ENDS * (c) 2018 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DIODES_INC_SPICE_MODEL *ORIGIN=SASP_DPG_HE *SIMULATOR=PSPICE *DATE=1/25/2023 *VERSION=1 .SUBCKT GDZ2V7LP3 1 2 * Terminals A C D1 1 2 DF DZ 3 1 DR VZ 2 3 94.82m .MODEL DF D ( IS=728.7f RS=0.576 N=1.255 CJO=51.51p VJ=1.00 M=0.431 TT=50.1n ) .MODEL DR D ( IS=347.0n RS=6.878 N=10.57 ) .ENDS * (c) 2023 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL .SIMULATOR DEFAULT *TITLE=GDZ3V9LP3 *DATE=21/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 ** Imported from: C:UserssuppuluriDesktopGDZ3V9LP3.txt .model GDZ3V9LP3 D(IS=.21f RS=0.15 CJO=17p M=0.37 VJ=0.7 N=1 IKF=5m ISR=.05n + BV=5 IBV=100u TT=30n EG=1.12 TRS1=.1m) * .ENDS (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=GDZ5V1LP3 *DATE=21/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model GDZ5V1LP3 D(IS=.21f RS=0.15 CJO=17p M=0.37 VJ=0.7 N=1 IKF=5m ISR=.05n + BV=5 IBV=100u TT=30n EG=1.12 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=GDZ5V6LP3 *DATE=25/01/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 ** Imported from: C:\Users\suppuluri\Desktop\GDZ3V9LP3.txt .model GDZ5V6LP3 D(IS=.21f RS=0.35 CJO=14.5p M=0.37 VJ=0.7 N=1 IKF=18m ISR=.05n + BV=5.5 IBV=100u TT=30n EG=1.09 TRS1=.1m) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=GDZ6V2LP3 *DATE=9/29/2022 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model GDZ6V2LP3 D(IS=.2f RS=4.58 CJO=14.3p M=0.37 VJ=0.7 N=0.8 IKF=.1m ISR=.05n + BV=6.12 IBV=100u TT=30n EG=1.14 TRS1=.01m) * (c) 2022 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=GDZ6V8LP3 *DATE=22/02/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model GDZ6V8LP3 D(IS=.2f RS=.05 CJO=17p M=0.37 VJ=0.7 N=.9 IKF=.1m ISR=.05n + BV=6.71 IBV=100u TT=30n EG=1.14 TRS1=.01m) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=7/8/2021 *VERSION=1 .SUBCKT GDZ9V1LP3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.8 .MODEL DF D ( IS=17.4n RS=1.224 N=1.8 + CJO=100p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=0.423f RS=8.449 N=0.491 ) .ENDS .ENDS * (c) 2018 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *TITLE=GZ23C5V6 *DATE=15/06/2017 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 ** Imported from: C:\Users\suppuluri\Desktop\GZ23C5V6.txt .model GZ23C5V6 D(IS=.21f RS=0.35 CJO=14.5p M=0.37 VJ=0.7 N=1 IKF=18m ISR=.05n + BV=5.5 IBV=100u TT=30n EG=1.09 TRS1=.1m) * (c) 2017 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ***************************************************************************************************************************************** *SRC=HBDM60V600W;DI_HBDM60V600W_NPN;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. BJTs - Complementary .MODEL DI_HBDM60V600W_NPN NPN (IS=1P NF=1.00 BF=479 VAF=161 + IKF=1.21 ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=576p TR=110n EG=1.12 ) *SRC=HBDM60V600W;DI_HBDM60V600W_PNP;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_HBDM60V600W_PNP PNP (IS=200f NF=1.02 BF=180 VAF=139 NKF=0.9 + IKF=1.6 ISE=200f NE=2.5 BR=25 NR=1.00 RCO=0.7 + VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=10m + XTB=1.6 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 + MJC=0.300 TF=700p TR=2n EG=1.12 ) ***************************************************************************************************************************************** *SRC=HBS410;DI_HBS410;Diodes;Si; 1.00kV 4.00A 3.00µs Diodes Inc. Bridge -- for one element .MODEL DI_HBS410 D ( IS=130.2n RS=6.366m BV=1.229k IBV=1m + CJO=69.01p M=0.295 N=2.075 TT=4.32µ) *SRC=HD01;DI_HD01;Diodes;Si; 100V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD01 D ( IS=3.47n RS=42.6m BV=100 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD02;DI_HD02;Diodes;Si; 200V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD02 D ( IS=3.47n RS=42.6m BV=200 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD04;DI_HD04;Diodes;Si; 400V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD04 D ( IS=3.47n RS=42.6m BV=400 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD06;DI_HD06;Diodes;Si; 600V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD06 D ( IS=3.47n RS=42.6m BV=600 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=IMT17;DI_IMT17;BJTs PNP; Si; 50.0V 0.500A 240MHz .MODEL DI_IMT17 PNP (IS=3.85f NF=1.00 BF=289 VAF=127 + IKF=0.592 ISE=6.90f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.900 RE=0.150 RB=0.600 RC=60.0m + XTB=1.5 CJE=79.9p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=606p TR=103n EG=1.12 ) *SRC=IMX8;DI_IMX8;BJTs NPN; Si; 120V 50.0mA 300MHz Diodes Inc. Transistor .MODEL DI_IMX8 NPN (IS=14.6f NF=1.00 BF=581 VAF=197 + IKF=30.4m ISE=2.54p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=75.0m RE=0.830 RB=3.32 RC=0.332 + XTB=1.5 CJE=12.5p VJE=1.10 MJE=0.500 CJC=4.02p VJC=0.300 + MJC=0.300 TF=475p TR=80.1n EG=1.12 ) *SRC=KBJ4005G;DI_KBJ4005G;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ4005G D ( IS=656n RS=10.5m BV=50.0 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ401G;DI_KBJ401G;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ401G D ( IS=656n RS=10.5m BV=100 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ402G;DI_KBJ402G;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ402G D ( IS=656n RS=10.5m BV=200 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ404G;DI_KBJ404G;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ404G D ( IS=656n RS=10.5m BV=400 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ406G;DI_KBJ406G;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ406G D ( IS=656n RS=10.5m BV=600 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ408G;DI_KBJ408G;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ408G D ( IS=656n RS=10.5m BV=800 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBJ410G;DI_KBJ410G;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ410G D ( IS=656n RS=10.5m BV=1.00k IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) *SRC=KBP005G;DI_KBP005G;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP005G D ( IS=39.2u RS=28.1m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP01G;DI_KBP01G;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP01G D ( IS=39.2u RS=28.1m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP02G;DI_KBP02G;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP02G D ( IS=39.2u RS=28.1m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP04G;DI_KBP04G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP04G D ( IS=39.2u RS=28.1m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP06G;DI_KBP06G;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP06G D ( IS=39.2u RS=28.1m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP08G;DI_KBP08G;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP08G D ( IS=39.2u RS=28.1m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP10G;DI_KBP10G;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP10G D ( IS=39.2u RS=28.1m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP2005G;DI_KBP2005G;Diodes;Si; 50.0V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP2005G D ( IS=143n RS=21.1m BV=50.0 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP201G;DI_KBP201G;Diodes;Si; 100V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP201G D ( IS=143n RS=21.1m BV=100 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP202G;DI_KBP202G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP202G D ( IS=143n RS=21.1m BV=200 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP204G;DI_KBP204G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP204G D ( IS=143n RS=21.1m BV=400 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP206G;DI_KBP206G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP206G D ( IS=143n RS=21.1m BV=600 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP208G;DI_KBP208G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP208G D ( IS=143n RS=21.1m BV=800 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP210G;DI_KBP210G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP210G D ( IS=143n RS=21.1m BV=1.00k IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) ***************************************************************************************************************************************** *SRC=LBN150B01;DI_LBN150B01_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary .MODEL DI_LBN150B01_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 + MJC=0.300 TF=450p TR=70.2n EG=1.12 ) *SRC=LBN150B01;DI_LBN150B01_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary .MODEL DI_LBN150B01_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 + MJC=0.300 TF=558p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** ******************************************************************************************************************************* *SRC=LMN200B01;DI_LMN200B01_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_LMN200B01P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ---------------------------------------------------------- ******************************************************************************************************************************* *SRC=LMN200B02;DI_LMN200B02_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_LMN200B02_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ---------------------------------------------------------- *SRC=MBR1030;DI_MBR1030;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1030 D ( IS=2.62m RS=4.20m BV=30.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1030CT;DI_MBR1030CT;Diodes;Si; 30.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1030CT D ( IS=4.25u RS=13.0m BV=30.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1035;DI_MBR1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1035 D ( IS=2.62m RS=4.20m BV=35.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1040;DI_MBR1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1040 D ( IS=2.62m RS=4.20m BV=40.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1040CT;DI_MBR1040CT;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1040CT D ( IS=4.25u RS=13.0m BV=40.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1045;DI_MBR1045;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1045 D ( IS=2.62m RS=4.20m BV=45.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) *SRC=MBR1045CT;DI_MBR1045CT;Diodes;Si; 45.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1045CT D ( IS=4.25u RS=13.0m BV=45.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1050;DI_MBR1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1050 D ( IS=153u RS=3.17m BV=50.0 IBV=100u + CJO=796p M=0.333 N=1.96 TT=7.20n ) *SRC=MBR1050CT;DI_MBR1050CT;Diodes;Si; 50.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1050CT D ( IS=7.24u RS=14.5m BV=50.0 IBV=100u + CJO=318p M=0.333 N=1.29 TT=14.4n ) *SRC=MBR1060;DI_MBR1060;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1060 D ( IS=153u RS=3.17m BV=60.0 IBV=100u + CJO=796p M=0.333 N=1.96 TT=7.20n ) *SRC=MBR1530CT;DI_MBR1530CT;Diodes;Si; 30.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1530CT D ( IS=344u RS=2.81m BV=30.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1535CT;DI_MBR1535CT;Diodes;Si; 35.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1535CT D ( IS=344u RS=2.81m BV=35.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1540CT;DI_MBR1540CT;Diodes;Si; 40.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1540CT D ( IS=344u RS=2.81m BV=40.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1545CT;DI_MBR1545CT;Diodes;Si; 45.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1545CT D ( IS=344u RS=2.81m BV=45.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) *SRC=MBR1550CT;DI_MBR1550CT;Diodes;Si; 50.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1550CT D ( IS=11.3u RS=2.64m BV=50.0 IBV=25.0u + CJO=530p M=0.333 N=1.87 TT=7.20n ) *SRC=MBR1560CT;DI_MBR1560CT;Diodes;Si; 60.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1560CT D ( IS=11.3u RS=2.64m BV=60.0 IBV=25.0u + CJO=530p M=0.333 N=1.87 TT=7.20n ) *SRC=MBR1635;DI_MBR1635;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_MBR1635 D ( IS=138u RS=2.62m BV=35.0 IBV=31.0u + CJO=862p M=0.333 N=1.53 TT=7.20n ) *SRC=MBR1640;DI_MBR1640;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_MBR1640 D ( IS=138u RS=2.62m BV=40.0 IBV=31.0u + CJO=862p M=0.333 N=1.53 TT=7.20n ) *SRC=MBR2030CT;DI_MBR2030CT;Diodes;Si; 30.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2030CT D ( IS=99.0u RS=2.10m BV=30.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2035CT;DI_MBR2035CT;Diodes;Si; 35.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2035CT D ( IS=98.9u RS=2.11m BV=35.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2040CT;DI_MBR2040CT;Diodes;Si; 40.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2040CT D ( IS=98.9u RS=2.11m BV=40.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2045CT;DI_MBR2045CT;Diodes;Si; 45.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2045CT D ( IS=98.9u RS=2.11m BV=45.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2050CT;DI_MBR2050CT;Diodes;Si; 50.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2050CT D ( IS=16.0u RS=2.11m BV=50.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *SRC=MBR2060CT;DI_MBR2060CT;Diodes;Si; 60.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2060CT D ( IS=16.0u RS=2.11m BV=60.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) *MBR230S1F Spice Model v1.0 Last Revised 4/3/209 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SMBR230S1F D ( IS=22.00u RS=29.65m BV=40.00 IBV=10.00 + CJO=409.0p M=469.1m N=1.012 TT=10.00n EG=480.0m VJ=287.2m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=MBR2545CT;DI_MBR2545CT;Diodes;Si; 45.0V 30.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2545CT D ( IS=533u RS=1.41m BV=45.0 IBV=50.0u + CJO=1.34n M=0.333 N=1.95 TT=1.44n ) *SRC=MBR2560CT;DI_MBR2560CT;Diodes;Si; 60.0V 30.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2560CT D ( IS=1.16m RS=1.41m BV=60.0 IBV=50.0u + CJO=1.34k M=0.333 N=2.53 TT=1.44n ) *SRC=MBRB1530CT;DI_MBRB1530CT;Diodes;Si; 30.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1530CT D ( IS=71.5u RS=2.81m BV=30.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=MBRB1535CT;DI_MBRB1535CT;Diodes;Si; 35.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1535CT D ( IS=71.5u RS=2.81m BV=35.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *DIODES_INC_MJD2873_SPICE_MODEL *DATE=15Mar2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD2873 NPN (IS=8p NF=1.00 BF=333 VAF=127 + IKF=7.13 ISE=0.8p NE=2.00 BR=59.00 NR=1.00 NK=0.83 ISC=40p NC=1.5 + VAR=14.5 IKR=6.00 RE=45.2m RB=0.137 RC=22.7m RCO=0.01 + XTB=1.5 CJE=56.8p VJE=1.10 MJE=0.500 CJC=72.8p VJC=0.300 + MJC=0.300 TF=265p TR=21.57n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.003 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_MJD2873Q_SPICE_MODEL *DATE=20Jan2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD2873Q NPN (IS=8p NF=1.00 BF=333 VAF=127 + IKF=7.13 ISE=0.8p NE=2.00 BR=59.00 NR=1.00 NK=0.83 ISC=40p NC=1.5 + VAR=14.5 IKR=6.00 RE=45.2m RB=0.137 RC=22.7m RCO=0.01 + XTB=1.5 CJE=56.8p VJE=1.10 MJE=0.500 CJC=72.8p VJC=0.300 + MJC=0.300 TF=265p TR=21.57n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.003 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 * .MODEL MJD31C NPN IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13 + NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534 + VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9 * *$ *DIODES_INC_MJD31CH_SPICE_MODEL *DATE=15Mar2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD31CH NPN ( IS=8.08e-015 NF=1.00 BF=262 VAF=180 + IKF=3.03 ISE=270f NE=2.00 BR=32.00 NR=1.00 NK=0.71 ISC=08p NC=1.67 + VAR=10.0 IKR=7.50 RE=65.3m RB=0.173 RC=17.3m RCO=0.02 + XTB=1.5 CJE=45.2p VJE=1.10 MJE=0.500 CJC=59.2p VJC=0.300 + MJC=0.300 TF=10p TR=72.1n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_MJD31CHQ_SPICE_MODEL *DATE=05Dec2022 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD31CHQ NPN ( IS=8.08e-015 NF=1.00 BF=262 VAF=180 + IKF=3.03 ISE=270f NE=2.00 BR=32.00 NR=1.00 NK=0.71 ISC=08p NC=1.67 + VAR=10.0 IKR=7.50 RE=65.3m RB=0.173 RC=17.3m RCO=0.02 + XTB=1.5 CJE=45.2p VJE=1.10 MJE=0.500 CJC=59.2p VJC=0.300 + MJC=0.300 TF=10p TR=72.1n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=31May2016 *VERSION=1-Q * .MODEL MJD31CQ NPN (IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13 + NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534 + VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=31May2016 *VERSION=1-Q * .MODEL MJD31CUQ NPN (IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13 + NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534 + VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 * .MODEL MJD32C PNP IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76 + ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14 + NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896 + VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=31May2016 *VERSION=1-Q * .MODEL MJD32CQ PNP (IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76 + ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14 + NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896 + VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=31May2016 *VERSION=1-Q * .MODEL MJD32CUQ PNP (IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76 + ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14 + NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896 + VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 * .MODEL MJD340 NPN IS=2.3E-13 NF=1.003 BF=150 IKF=1.35 + VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE 1.33 NR=1.001 + BR=8 VAR=43 ISC=1.8E-13 NC=1.19 RC=0.085 RB 0.35 RE 0.2 + CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7 + XTB=1.4 QUASIMOD=1 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 * .MODEL MJD350 PNP IS=1.305E-13 NF=1.0004 BF=120 IKF=.5 VAF=1060 + ISE=7.5E-13 NE=1.5 RCO=15 GAMMA=5E-8 NR=1 ISC=2E-13 NC=1.8 + VAR=50 BR=3.2 IKR=.5 RB=.1 RE=.19 RC=.2 CJC=48E-12 MJC=.56 + VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6 + TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1 * *$ *DIODES_MJD41C_SPICE_MODEL *DATE=15Mar2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD41C NPN (IS=23.7f NF=1.00 BF=212 VAF=180 + IKF=12.03 ISE=1.59p NE=2.00 BR=56.00 NR=1.00 NK=0.8 ISC=27p NC=1.8 + VAR=18.0 IKR=12.0 RE=25.5m RB=70.0m RC=7.50m RCO=0.002 + XTB=1.5 CJE=110p VJE=1.10 MJE=0.500 CJC=120p VJC=0.300 + MJC=0.300 TF=221p TR=38.4n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.003 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_MJD41CQ_SPICE_MODEL *DATE=15Dec2022 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD41CQ NPN (IS=23.7f NF=1.00 BF=212 VAF=180 + IKF=12.03 ISE=1.59p NE=2.00 BR=56.00 NR=1.00 NK=0.8 ISC=27p NC=1.8 + VAR=18.0 IKR=12.0 RE=25.5m RB=70.0m RC=7.50m RCO=0.002 + XTB=1.5 CJE=110p VJE=1.10 MJE=0.500 CJC=120p VJC=0.300 + MJC=0.300 TF=221p TR=38.4n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.003 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2022 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_MJD42C_SPICE_MODEL *DATE=13Mar2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD42C PNP (IS=82.4f NF=1.00 BF=202 VAF=180 + IKF=21.03 ISE=3.2p NE=2.00 BR=40.00 NR=1.00 NK=0.94 ISC=71p NC=1.8 + VAR=28.0 IKR=12.0 RE=47.9m RB=52.77m RC=15.77m RCO=0.002 + XTB=1.6 CJE=223p VJE=1.10 MJE=0.500 CJC=229p VJC=0.300 + MJC=0.300 TF=950p TR=64.1n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.003 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_MJD42CQ_SPICE_MODEL *DATE=19Jan2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD42CQ PNP (IS=82.4f NF=1.00 BF=202 VAF=180 + IKF=21.03 ISE=3.2p NE=2.00 BR=40.00 NR=1.00 NK=0.94 ISC=71p NC=1.8 + VAR=28.0 IKR=12.0 RE=47.9m RB=52.77m RC=15.77m RCO=0.002 + XTB=1.6 CJE=223p VJE=1.10 MJE=0.500 CJC=229p VJC=0.300 + MJC=0.300 TF=950p TR=64.1n EG=1.12 + TRE1=0.001 TRB1=0.003 TRC1=0.003 GAMMA=1n ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_MJD44H11_SPICE_MODEL *DATE=19Dec2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD44H11 NPN (IS=190f NF=1.00 BF=234 VAF=161 + IKF=9.93 ISE=1.8p NE=2.00 BR=88.00 NR=1.00 NK=0.71 ISC=61p NC=1.77 + VAR=28.0 IKR=6.00 RE=28.3m RB=73.2m RC=7.33m RCO=0.632 + XTB=1.5 CJE=10.22n VJE=1.10 MJE=0.500 CJC=1.1n VJC=0.300 + MJC=0.300 TF=8.62n TR=9.28n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=30n QUASIMOD=1 ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_MJD44H11Q_SPICE_MODEL *DATE=19Dec2023 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD44H11Q NPN (IS=190f NF=1.00 BF=234 VAF=161 + IKF=9.93 ISE=1.8p NE=2.00 BR=88.00 NR=1.00 NK=0.71 ISC=61p NC=1.77 + VAR=28.0 IKR=6.00 RE=28.3m RB=73.2m RC=7.33m RCO=0.632 + XTB=1.5 CJE=10.22n VJE=1.10 MJE=0.500 CJC=1.1n VJC=0.300 + MJC=0.300 TF=8.62n TR=9.28n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=30n QUASIMOD=1 ) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_MJD45H11_SPICE_MODEL *DATE=28Mar2024 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD45H11 PNP (IS=157f NF=1.00 BF=227 VAF=157 + IKF=8.86 ISE=1.4p NE=2.00 BR=8.00 NR=1.00 NK=0.52 ISC=5.2p NC=1.6 + VAR=28.0 IKR=12.0 RE=26.4m RB=65.7m RC=12.57m RCO=0.25 + XTB=1.82 CJE=5.8n VJE=1.10 MJE=0.500 CJC=4.948n VJC=0.300 + MJC=0.300 TF=1.01n TR=20.2n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=0.520n QUASIMOD=1) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *DIODES_INC_MJD45H11Q_SPICE_MODEL *DATE=28Mar2024 *VERSION=1.0 *ORIGIN=DT *SIMULATOR=SIMETRIX * .MODEL MJD45H11Q PNP (IS=157f NF=1.00 BF=227 VAF=157 + IKF=8.86 ISE=1.4p NE=2.00 BR=8.00 NR=1.00 NK=0.52 ISC=5.2p NC=1.6 + VAR=28.0 IKR=12.0 RE=26.4m RB=65.7m RC=12.57m RCO=0.25 + XTB=1.82 CJE=5.8n VJE=1.10 MJE=0.500 CJC=4.948n VJC=0.300 + MJC=0.300 TF=1.01n TR=20.2n EG=1.12 + TRE1=0.003 TRB1=0.003 TRC1=0.001 GAMMA=0.520n QUASIMOD=1) * *$ * ****************************************************************************** * (c) 2023 Diodes Inc * * Diodes Incorporated and its affiliated companies and subsidiaries * (collectively, "Diodes") provide these spice models and data * (collectively, the "SM data") "as is" and without any representations * or warranties, express or implied, including any warranty of * merchantability or fitness for a particular purpose, any warranty * arising from course of dealing or course of performance, or any * warranty that access to or operation of the SM data will be * uninterrupted, or that the SM data or any simulation using the SM data * will be error free. * * To the maximum extent permitted by law, in no event will Diodes be * liable for any indirect, special, incidental, punitive or consequential * damages arising out of or in connection with the production or use of * SM data, however caused and under whatever cause of action or theory of * liability brought (including, without limitation, under any contract, * negligence or other tort theory of liability), even if Diodes has been * advised of the possibility of such damages, and Diodes' total liability * (whether in contract, tort or otherwise) with regard to the SM data * will not, in the aggregate, exceed any sums paid by you to Diodes for * the SM data * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ****************************************************************************** *SRC=MMBD2004S;DI_MMBD2004S;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching .MODEL DI_MMBD2004S D ( IS=1.76u RS=0.187 BV=240 IBV=100n + CJO=6.63p M=0.333 N=1.70 TT=72.0n ) *SRC=MMBD2004SW;DI_MMBD2004SW;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching - one element of device .MODEL DI_MMBD2004SW D ( IS=1.76u RS=0.187 BV=240 IBV=100n + CJO=6.63p M=0.333 N=1.70 TT=72.0n ) *SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004A .MODEL DI_MMBD3004A D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m *SRC=MMBD3004BRM;DI_MMBD3004BRM;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching - one element of MMBD3004BRM D1 1 = A 2 = C DI_MMBD3004BRM .MODEL DI_MMBD3004BRM D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m *SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004C .MODEL DI_MMBD3004C D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m *SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004S .MODEL DI_MMBD3004S D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4148 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=MMBD4148PLM;MMBD4148PLM;Diodes;Si; 75.0V 0.300A 4.00ns DIODES Inc .MODEL MMBD4148PLM D ( IS=13.0u RS=0.140 BV=75.0 IBV=1.00u + CJO=2.00 M=0.333 N=4.97 TT=5.76n ) *SRC=MMBD4148W;DI_MMBD4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4148W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=MMBD4448;DI_MMBD4448;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=MMBD4448H;DI_MMBD4448H;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448H D ( IS=300n RS=0.422 BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=MMBD4448HADW;DI_MMBD4448HADW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HADW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HAQW;DI_MMBD4448HAQW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HAQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HCQW;DI_MMBD4448HCQW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HCQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HSDW;DI_MMBD4448HSDW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HSDW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** *SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching .MODEL DI_MMBD4448HT D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ******************************************************************************************************************************************** ********************************************************************************************************************************************** *SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - One node of two .MODEL DI_MMBD4448HTA D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** ********************************************************************************************************************************************** *SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - One node of two .MODEL DI_MMBD4448HTC D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** ********************************************************************************************************************************************** *SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - One node of two .MODEL DI_MMBD4448HTS D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** *SRC=MMBD4448HTW;DI_MMBD4448HTW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of three .MODEL DI_MMBD4448HTW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HW;DI_MMBD4448HW;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448HW D ( IS=77.0n RS=84.0m BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.37 TT=5.76n ) *SRC=MMBD4448V;DI_MMBD4448V;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching - one element of device .MODEL DI_MMBD4448V D ( IS=4.77n RS=84.4m BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=MMBD4448W;DI_MMBD4448W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_MMBD5004ACS .MODEL DI_MMBD5004ACS D + IS = 10n + N = 2.02 + BV = 400 + IBV = 1.00u + RS = 0.7 + CJO = 0.6p + VJ = 60m + M = 35m + FC = 0.5 + TT = 50n *SRC=MMBD5004BRM;MMBD5004BRM;Diodes;Si; 400V 1.25A 50.0ns DIODES Switching diodes .MODEL MMBD5004BRM D ( IS=128n RS=33.6m BV=400 IBV=5.00u + CJO=2.00p M=0.333 N=2.62 TT=72.0n ) *SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_MMBD5004ACS .MODEL DI_MMBD5004ACS D + IS = 10n + N = 2.02 + BV = 400 + IBV = 1.00u + RS = 0.7 + CJO = 0.6p + VJ = 60m + M = 35m + FC = 0.5 + TT = 50n *SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_MMBD5004ACS .MODEL DI_MMBD5004ACS D + IS = 10n + N = 2.02 + BV = 400 + IBV = 1.00u + RS = 0.7 + CJO = 0.6p + VJ = 60m + M = 35m + FC = 0.5 + TT = 50n *SRC=MMBD7000;DI_MMBD7000;Diodes;Si; 75.0V 0.300A 4.00us Diodes Inc. .MODEL DI_MMBD7000 D ( IS=5.08n RS=0.140 BV=75.0 IBV=2.00u + CJO=2.00p M=0.333 N=2.03 TT=5.76u ) *SRC=MMBD7000HC;MMBD7000HC;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching Diode .MODEL MMBD7000HC D ( IS=412p RS=0.140 BV=100 IBV=3.00u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *SRC=MMBD7000HS;MMBD7000HS;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching Diode .MODEL MMBD7000HS D ( IS=412p RS=0.140 BV=100 IBV=3.00u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *SRC=MMBD914;DI_MMBD914;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching .MODEL DI_MMBD914 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.60 TT=5.76n ) *SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms Diodes Inc. MOSFET .MODEL DI_MMBF170 NMOS( LEVEL=1 VTO=2.10 KP=18.8m GAMMA=2.60 + PHI=.75 LAMBDA=1.04m RD=0.294 RS=0.294 + IS=250f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *---------- MMBF170Q Spice Model ---------- .SUBCKT MMBF170Q 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.764 RS 30 3 0.001 RG 20 2 120 CGS 2 3 1.982E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.95E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 + TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 .MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes MMBF170Q Spice Model v1.0M Last Revised 2016/3/7 *SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2222A NPN (IS=25.4f NF=1.00 BF=274 VAF=114 + IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=622p TR=124n EG=1.12 ) *SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2222A NPN (IS=25.4f NF=1.00 BF=274 VAF=114 + IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=622p TR=124n EG=1.12 ) *SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2222A NPN (IS=25.4f NF=1.00 BF=274 VAF=114 + IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=622p TR=124n EG=1.12 ) *SRC=MMBT2222AT;DI_MMBT2222AT;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMBT2222AT NPN (IS=60.4f NF=1.00 BF=301 VAF=114 + IKF=66.8m ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.165 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 + TF=491p TR=82.1n EG=1.12 ) *SRC=MMBT2907A;DI_MMBT2907A;BJTs PNP; Si; 60.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2907A PNP (IS=60.7f NF=1.00 BF=312 VAF=139 + IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 + MJC=0.300 TF=758p TR=123n EG=1.12 ) *SRC=MMBT2907A;DI_MMBT2907A;BJTs PNP; Si; 60.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2907A PNP (IS=60.7f NF=1.00 BF=312 VAF=139 + IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 + MJC=0.300 TF=758p TR=123n EG=1.12 ) *SRC=MMBT2907AT;DI_MMBT2907AT;BJTs PNP; Si; 60.0V 0.500A 300MHz Diodes Inc. BJTs .MODEL DI_MMBT2907AT PNP (IS=50.0f NF=1.00 BF=410 VAF=139 + IKF=0.182 ISE=16.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.343 RB=1.37 RC=0.137 + XTB=1.5 CJE=34.9p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=484p TR=29.9n EG=1.12 ) *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) *DIODES_INC_SPICE_MODEL MMBT3904FA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=22Oct2013 *VERSION=2.0 .MODEL MMBT3904FA NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL MMBT3904LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=17Aug2012 *VERSION=1.0 .MODEL MMBT3904LP NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) *SRC=MMBT3904T;DI_MMBT3904T;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMBT3904T NPN (IS=20.2f NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=4.25p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=8.92p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=383p TR=69.9n EG=1.12 ) *SRC=MMBT3906;DI_MMBT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT3906 PNP (IS=20.3f NF=1.00 BF=192 VAF=114 + IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300 + MJC=0.300 TF=589p TR=98.4n EG=1.12 ) *DIODES_INC_SPICE_MODEL MMBT3906FA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL MMBT3906FA PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL MMBT3906LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .MODEL MMBT3906LP PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBT3906;DI_MMBT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT3906 PNP (IS=20.3f NF=1.00 BF=192 VAF=114 + IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300 + MJC=0.300 TF=589p TR=98.4n EG=1.12 ) *SRC=MMBT3906T;DI_MMBT3906T;BJTs PNP; Si; 40.0V 0.200A 257MHz Didoes Inc. BJTs .MODEL DI_MMBT3906T PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=1.13p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 MJC=0.300 + TF=571p TR=84.1n EG=1.12 ) *SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=717p TR=121n EG=1.12 ) *SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode *SYM=HZEN .SUBCKT DI_UDZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.99 .MODEL DF D ( IS=14.7p RS=3.10 N=1.10 + CJO=32.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=1.28 N=0.828 ) *SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=717p TR=121n EG=1.12 ) *SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode *SYM=HZEN .SUBCKT DI_UDZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.99 .MODEL DF D ( IS=14.7p RS=3.10 N=1.10 + CJO=32.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=1.28 N=0.828 ) *SRC=MMBT4401T;DI_MMBT4401T;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMBT4401T NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 MJC=0.300 + TF=533p TR=84.1n EG=1.12 ) *SRC=MMBT4403;DI_MMBT4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes Inc. Transistor .MODEL DI_MMBT4403 PNP (IS=26.9f NF=1.00 BF=274 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.263 RB=1.05 RC=0.105 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=24.6p VJC=0.300 + MJC=0.300 TF=500p TR=82.4n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMBT4403T;DI_MMBT4403T;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_MMBT4403T PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMBT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMBT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMBT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ *SRC=MMBT6427;DI_MMBT6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMBT6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) *SRC=MMBTA05;DI_MMBTA05;BJTs NPN; Si; 60.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMBTA05 NPN (IS=51.3f NF=1.00 BF=547 VAF=139 + IKF=0.146 ISE=11.1p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.223 RB=0.892 RC=89.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=631p TR=110n EG=1.12 ) *SRC=MMBTA05;DI_MMBTA05;BJTs NPN; Si; 60.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMBTA05 NPN (IS=51.3f NF=1.00 BF=547 VAF=139 + IKF=0.146 ISE=11.1p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.223 RB=0.892 RC=89.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=631p TR=110n EG=1.12 ) *SRC=MMBTA06;DI_MMBTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. Transistor .MODEL DI_MMBTA06 NPN (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=576p TR=110n EG=1.12 ) *SRC=MMBTA06;DI_MMBTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. Transistor .MODEL DI_MMBTA06 NPN (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=576p TR=110n EG=1.12 ) *SRC=MMBTA13;DI_MMBTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. NPN Darlington *SYM=DARBJTN .SUBCKT DI_MMBTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=134 VAF=98.6 + IKF=0.240 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=4.00 RB=16.0 RC=1.60 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.77n TR=617n ) .MODEL DSUB D( IS=360f N=1 RS=4.00 BV=30.0 + IBV=.001 CJO=13.9p TT=617n ) .ENDS *SRC=MMBTA14;DI_MMBTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMBTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n )=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) .MODEL DSUB D( IS=360f N=1 RS=0.333 BV=30.0 + IBV=.001 CJO=13.9p TT=614n ) *SRC=MMBTA28;DI_MMBTA28;BJTs NPN;Darlington;80.0V 0.500A Diodes Inc. NPN Darlington *SYM=DARBJTN .SUBCKT DI_MMBTA28 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=134 VAF=161 + IKF=0.400 ISE=36.5p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.500 RB=2.00 RC=0.200 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=6.15n TR=1.01u ) .MODEL DSUB D( IS=600f N=1 RS=0.500 BV=80.0 + IBV=.001 CJO=13.9p TT=1.01u ) .ENDS *SRC=MMBTA42;DI_MMBTA42;BJTs NPN; Si; 300V 0.500A 219MHz Diodes Inc. NPN Transistor .MODEL DI_MMBTA42 NPN (IS=51.0f NF=1.00 BF=194 VAF=312 + IKF=0.182 ISE=34.9p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.450 RE=11.6 RB=46.3 RC=4.63 + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=481p TR=115n EG=1.12 ) *SRC=MMBTA42;DI_MMBTA42;BJTs NPN; Si; 300V 0.500A 219MHz Diodes Inc. NPN Transistor .MODEL DI_MMBTA42 NPN (IS=51.0f NF=1.00 BF=194 VAF=312 + IKF=0.182 ISE=34.9p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.450 RE=11.6 RB=46.3 RC=4.63 + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=481p TR=115n EG=1.12 ) *SRC=MMBTA55;DI_MMBTA55;BJTs PNP; Si; 60.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA55 PNP (IS=50.8f NF=1.00 BF=479 VAF=139 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 + MJC=0.300 TF=660p TR=149n EG=1.12 ) *SRC=MMBTA55;DI_MMBTA55;BJTs PNP; Si; 60.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA55 PNP (IS=50.8f NF=1.00 BF=479 VAF=139 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 + MJC=0.300 TF=660p TR=149n EG=1.12 ) *SRC=MMBTA56;DI_MMBTA56;BJTs PNP; Si; 80.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA56 PNP (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 + MJC=0.300 TF=660p TR=149n EG=1.12 ) *SRC=MMBTA56;DI_MMBTA56;BJTs PNP; Si; 80.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA56 PNP (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 + MJC=0.300 TF=660p TR=149n EG=1.12 ) *SRC=MMBTA63;DI_MMBTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMBTA64;DI_MMBTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) *SRC=MMBTA92;DI_MMBTA92;BJTs PNP; Si; 300V 0.500A 60.0MHz Diodes Inc. Transistor .MODEL DI_MMBTA92 PNP (IS=177f NF=1.00 BF=239 VAF=312 + IKF=72.9m ISE=33.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.18n TR=415n EG=1.12 ) *SRC=MMBTA92;DI_MMBTA92;BJTs PNP; Si; 300V 0.500A 60.0MHz Diodes Inc. Transistor .MODEL DI_MMBTA92 PNP (IS=177f NF=1.00 BF=239 VAF=312 + IKF=72.9m ISE=33.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.18n TR=415n EG=1.12 ) *SRC=MMBTH10;DI_MMBTH10;BJTs NPN; Si; 25.0V 50.0mA 650MHz Diodes Inc. Transistor .MODEL DI_MMBTH10 NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114 + IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 + XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 + MJC=0.300 TF=130p TR=27.4n EG=1.12 ) *SRC=MMBTH10;DI_MMBTH10;BJTs NPN; Si; 25.0V 50.0mA 650MHz Diodes Inc. Transistor .MODEL DI_MMBTH10 NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114 + IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 + XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 + MJC=0.300 TF=130p TR=27.4n EG=1.12 ) *SRC=MMBTH24;DI_MMBTH24;BJTs NPN; Si; 40.0V 50.0mA 1.00kMHz Diodes Inc. Transistor .MODEL DI_MMBTH24 NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114 + IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 + XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 + MJC=0.300 TF=130p TR=27.4n EG=1.12 ) *---------- RYN27VC Spice Model ---------- .SUBCKT RYN27VC 1 2 * TERMINALS: Anode Cathode D1 1 2 + D1 R1 1 2 6.027E+09 .MODEL D1 D + IS = 3.323E-13 N = 1.288 RS = 0.4807 CJO = 2.963E-11 VJ = 9.885 M = 2.685 + FC = 0.5 BV = 26 IBV = 1.534E-10 .ENDS *Diodes RYN27VC Spice Model v1.0 Last Revised 2019/01/12 *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5221B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.65 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBZ5221BS;DI_MMBZ5221BS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=340p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=26.1 N=3.00 ) *SRC=MMBZ5221BT;DI_MMBZ5221BT;Diodes;Zener <=10V; 2.40V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5221BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=26.1 N=3.00 ) *SRC=MMBZ5221BTS;DI_MMBZ5221BTS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=340p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=26.1 N=3.00 ) *SRC=MMBZ5221BW;DI_MMBZ5221BW;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5221BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=26.1 N=3.00 ) *SRC=MMBZ5222B;MMBZ5222B;Diodes;Zener <=10V; 2.50V 0.350W DIODES Zener *SYM=HZEN .SUBCKT MMBZ5222B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=57.7p RS=36.0 N=1.10 + CJO=255p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.5f RS=26.1 N=3.00 ) .ENDS *SRC=MMBZ5223B;DI_MMBZ5223B;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5223B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=26.1 N=3.00 ) .ENDS *SRC=MMBZ5223BS;DI_MMBZ5223BS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=275p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=26.1 N=3.00 ) *SRC=MMBZ5223BT;DI_MMBZ5223BT;Diodes;Zener <=10V; 2.70V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5223BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=26.1 N=3.00 ) *SRC=MMBZ5223BTS;DI_MMBZ5223BTS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=275p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=26.1 N=3.00 ) *SRC=MMBZ5223BW;DI_MMBZ5223BW;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5223BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5225B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.3 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBZ5225BS;DI_MMBZ5225BS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=240p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=26.1 N=3.00 ) *SRC=MMBZ5225BT;DI_MMBZ5225BT;Diodes;Zener <=10V; 3.00V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5225BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.208 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=26.1 N=3.00 ) *SRC=MMBZ5225BTS;DI_MMBZ5225BTS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=240p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=26.1 N=3.00 ) *SRC=MMBZ5225BW;DI_MMBZ5225BW;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5225BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5226B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.6 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMBZ5226BS;DI_MMBZ5226BS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=230p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=24.1 N=3.00 ) *SRC=MMBZ5226BT;DI_MMBZ5226BT;Diodes;Zener <=10V; 3.30V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5226BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.541 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=24.1 N=3.00 ) *SRC=MMBZ5226BTS;DI_MMBZ5226BTS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=230p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5226BW;DI_MMBZ5226BW;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5226BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=24.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5227B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.9 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=MMBZ5227BS;DI_MMBZ5227BS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=190p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=20.1 N=3.00 ) *SRC=MMBZ5227BT;DI_MMBZ5227BT;Diodes;Zener <=10V; 3.60V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5227BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.914 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=20.1 N=3.00 ) *SRC=MMBZ5227BTS;DI_MMBZ5227BTS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=190p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=20.1 N=3.00 ) *SRC=MMBZ5227BW;DI_MMBZ5227BW;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5227BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=20.1 N=3.00 ) *SRC=MMBZ5228B;DI_MMBZ5228B;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5228B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.29 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=19.1 N=3.00 ) .ENDS *SRC=MMBZ5228BS;DI_MMBZ5228BS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=180p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=19.1 N=3.00 ) *SRC=MMBZ5228BT;DI_MMBZ5228BT;Diodes;Zener <=10V; 3.90V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5228BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.23 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=19.1 N=3.00 ) *SRC=MMBZ5228BTS;DI_MMBZ5228BTS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=180p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=19.1 N=3.00 ) *SRC=MMBZ5228BW;DI_MMBZ5228BW;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5228BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=19.1 N=3.00 ) *SRC=MMBZ5229B;DI_MMBZ5229B;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5229B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.71 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=18.1 N=3.00 ) .ENDS *SRC=MMBZ5229BS;DI_MMBZ5229BS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=170p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=18.1 N=3.00 ) *SRC=MMBZ5229BT;DI_MMBZ5229BT;Diodes;Zener <=10V; 4.30V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5229BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.64 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.87f RS=18.1 N=3.00 ) *SRC=MMBZ5229BTS;DI_MMBZ5229BTS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=170p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=18.1 N=3.00 ) *SRC=MMBZ5229BW;DI_MMBZ5229BW;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5229BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=18.1 N=3.00 ) *SRC=MMBZ5230B;DI_MMBZ5230B;Diodes;Zener <=10V; 4.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5230B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.16 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=15.1 N=3.00 ) .ENDS *SRC=MMBZ5230BS;DI_MMBZ5230BS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5230BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=160p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=15.1 N=3.00 ) *SRC=MMBZ5230BT;DI_MMBZ5230BT;Diodes;Zener <=10V; 4.70V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5230BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.09 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.63f RS=15.1 N=3.00 ) *SRC=MMBZ5230BTS;DI_MMBZ5230BTS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5230BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=160p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=15.1 N=3.00 ) *SRC=MMBZ5230BW;DI_MMBZ5230BW;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5230BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=15.1 N=3.00 ) *SRC=MMBZ5231B;DI_MMBZ5231B;Diodes;Zener <=10V; 5.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5231B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.59 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=13.1 N=3.00 ) .ENDS *SRC=MMBZ5231BS;DI_MMBZ5231BS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5231BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) *SRC=MMBZ5231BT;DI_MMBZ5231BT;Diodes;Zener <=10V; 5.10V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5231BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.53 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=13.1 N=3.00 ) *SRC=MMBZ5231BTS;DI_MMBZ5231BTS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5231BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) *SRC=MMBZ5231BW;DI_MMBZ5231BW;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5231BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) *SRC=MMBZ5232B;DI_MMBZ5232B;Diodes;Zener <=10V; 5.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5232B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.21 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=7.11 N=3.00 ) .ENDS *SRC=MMBZ5232BS;DI_MMBZ5232BS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5232BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=130p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) *SRC=MMBZ5232BT;DI_MMBZ5232BT;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5232BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.21f RS=7.11 N=3.00 ) *SRC=MMBZ5232BTS;DI_MMBZ5232BTS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5232BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=130p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) *SRC=MMBZ5232BW;DI_MMBZ5232BW;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5232BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) *SRC=MMBZ5233B;DI_MMBZ5233B;Diodes;Zener <=10V; 6.00V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5233B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.68 .MODEL DF D ( IS=24.0p RS=33.5 N=1.10 + CJO=51.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.81f RS=3.11 N=3.00 ) .ENDS *SRC=MMBZ5233BS;DI_MMBZ5233BS;Diodes;Zener <=10V; 6.00V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5233BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.64 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=125p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=3.11 N=3.00 ) *SRC=MMBZ5233BTS;DI_MMBZ5233BTS;Diodes;Zener <=10V; 6.00V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5233BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.64 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=125p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=3.11 N=3.00 ) *SRC=MMBZ5234B;DI_MMBZ5234B;Diodes;Zener <=10V; 6.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5234B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.88 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=3.11 N=3.00 ) .ENDS *SRC=MMBZ5234BS;DI_MMBZ5234BS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5234BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=120p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) *SRC=MMBZ5234BT;DI_MMBZ5234BT;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5234BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.81 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.99f RS=3.11 N=3.00 ) *SRC=MMBZ5234BTS;DI_MMBZ5234BTS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5234BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=120p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) *SRC=MMBZ5234BW;DI_MMBZ5234BW;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5234BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) *SRC=MMBZ5235B;DI_MMBZ5235B;Diodes;Zener <=10V; 6.80V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5235B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.53 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=1.15 N=2.97 ) .ENDS *SRC=MMBZ5235BS;DI_MMBZ5235BS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5235BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=110p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) *SRC=MMBZ5235BT;DI_MMBZ5235BT;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5235BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.47 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=1.15 N=2.97 ) *SRC=MMBZ5235BTS;DI_MMBZ5235BTS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5235BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=110p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) *SRC=MMBZ5235BW;DI_MMBZ5235BW;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5235BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) *SRC=MMBZ5236B;DI_MMBZ5236B;Diodes;Zener <=10V; 7.50V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5236B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=2.12 N=3.00 ) .ENDS *SRC=MMBZ5236BS;DI_MMBZ5236BS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5236BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=95.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) *SRC=MMBZ5236BT;DI_MMBZ5236BT;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5236BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5236BTS;DI_MMBZ5236BTS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5236BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=95.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) *SRC=MMBZ5236BW;DI_MMBZ5236BW;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5236BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) *SRC=MMBZ5237B;DI_MMBZ5237B;Diodes;Zener <=10V; 8.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5237B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=4.11 N=3.00 ) .ENDS *SRC=MMBZ5237BS;DI_MMBZ5237BS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5237BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=88.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) *SRC=MMBZ5237BT;DI_MMBZ5237BT;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5237BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.77 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.51f RS=4.11 N=3.00 ) *SRC=MMBZ5237BTS;DI_MMBZ5237BTS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5237BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=88.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) *SRC=MMBZ5237BW;DI_MMBZ5237BW;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5237BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) *SRC=MMBZ5238B;DI_MMBZ5238B;Diodes;Zener <=10V; 8.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5238B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.33 .MODEL DF D ( IS=16.6p RS=32.4 N=1.10 + CJO=29.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.31f RS=4.11 N=3.00 ) .ENDS *SRC=MMBZ5238BS;DI_MMBZ5238BS;Diodes;Zener <=10V; 8.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5238BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.29 .MODEL DF D ( IS=9.47p RS=30.8 N=1.10 + CJO=83.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.89f RS=4.11 N=3.00 ) *SRC=MMBZ5238BTS;DI_MMBZ5238BTS;Diodes;Zener <=10V; 8.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5238BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.29 .MODEL DF D ( IS=9.47p RS=30.8 N=1.10 + CJO=83.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.89f RS=4.11 N=3.00 ) *SRC=MMBZ5239B;DI_MMBZ5239B;Diodes;Zener <=10V; 9.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5239B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.69 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=6.11 N=3.00 ) .ENDS *SRC=MMBZ5239BS;DI_MMBZ5239BS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5239BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.64 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=80.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=6.11 N=3.00 ) *SRC=MMBZ5239BT;DI_MMBZ5239BT;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5239BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.62 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.36f RS=6.11 N=3.00 ) *SRC=MMBZ5239BTS;DI_MMBZ5239BTS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5239BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.64 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=80.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=6.11 N=3.00 ) *SRC=MMBZ5239BW;DI_MMBZ5239BW;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5239BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.64 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=6.11 N=3.00 ) *SRC=MMBZ5240B;DI_MMBZ5240B;Diodes;Zener <=10V; 10.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5240B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=13.1 N=3.00 ) .ENDS *SRC=MMBZ5240BS;DI_MMBZ5240BS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5240BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.40 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=77.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=13.1 N=3.00 ) *SRC=MMBZ5240BT;DI_MMBZ5240BT;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5240BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.37 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=13.1 N=3.00 ) *SRC=MMBZ5240BTS;DI_MMBZ5240BTS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5240BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.40 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=77.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=13.1 N=3.00 ) *SRC=MMBZ5240BW;DI_MMBZ5240BW;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5240BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.40 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=13.1 N=3.00 ) *SRC=MMBZ5241B;DI_MMBZ5241B;Diodes;Zener 10V-50V; 11.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5241B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.33 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=18.1 N=3.00 ) .ENDS *SRC=MMBZ5241BS;DI_MMBZ5241BS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5241BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.29 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=75.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=18.1 N=3.00 ) *SRC=MMBZ5241BT;DI_MMBZ5241BT;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5241BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.27 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=18.1 N=3.00 ) *SRC=MMBZ5241BTS;DI_MMBZ5241BTS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5241BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.29 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=75.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=18.1 N=3.00 ) *SRC=MMBZ5241BW;DI_MMBZ5241BW;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5241BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.29 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=18.1 N=3.00 ) *SRC=MMBZ524B;DI_MMBZ5242B;Diodes;Zener 10V-50V; 12.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5242B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.17 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=26.1 N=3.00 ) .ENDS *SRC=MMBZ5242BS;DI_MMBZ5242BS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5242BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=74.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=26.1 N=3.00 ) *SRC=MMBZ5242BT;DI_MMBZ5242BT;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5242BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.10 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMBZ5242BTS;DI_MMBZ5242BTS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5242BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=74.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=26.1 N=3.00 ) *SRC=MMBZ5242BW;DI_MMBZ5242BW;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5242BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=26.1 N=3.00 ) *SRC=MMBZ5243B;DI_MMBZ5243B;Diodes;Zener 10V-50V; 13.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5243B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.5 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=9.11 N=3.00 ) .ENDS *SRC=MMBZ5243BS;DI_MMBZ5243BS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5243BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=66.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=4.82 N=3.00 ) *SRC=MMBZ5243BT;DI_MMBZ5243BT;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5243BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.5 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.51e-016 RS=21.8 N=3.00 ) *SRC=MMBZ5243BTS;DI_MMBZ5243BTS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5243BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=66.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=4.82 N=3.00 ) *SRC=MMBZ5243BW;DI_MMBZ5243BW;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5243BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=4.82 N=3.00 ) *SRC=MMBZ5244B;DI_MMBZ5244B;Diodes;Zener 10V-50V; 14.0V 0.350W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_MMBZ5244B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=10.3p RS=1.77 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=6.37 N=3.00 ) .ENDS *SRC=MMBZ5245B;DI_MMBZ5245B;Diodes;Zener 10V-50V; 15.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5245B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=12.1 N=3.00 ) .ENDS *SRC=MMBZ5245BS;DI_MMBZ5245BS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5245BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=60.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=6.86 N=3.00 ) *SRC=MMBZ5245BT;DI_MMBZ5245BT;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5245BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=28.1 N=3.00 ) *SRC=MMBZ5245BTS;DI_MMBZ5245BTS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5245BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=60.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=6.86 N=3.00 ) *SRC=MMBZ5245BW;DI_MMBZ5245BW;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5245BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=6.86 N=3.00 ) *SRC=MMBZ5246B;DI_MMBZ5246B;Diodes;Zener 10V-50V; 16.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5246B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.4 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=13.1 N=3.00 ) .ENDS *SRC=MMBZ5246BS;DI_MMBZ5246BS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5246BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=58.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=7.04 N=3.00 ) *SRC=MMBZ5246BT;DI_MMBZ5246BT;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5246BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.73e-016 RS=7.04 N=3.00 ) *SRC=MMBZ5246BTS;DI_MMBZ5246BTS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5246BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=58.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=7.04 N=3.00 ) *SRC=MMBZ5246BW;DI_MMBZ5246BW;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5246BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=7.04 N=3.00 ) *SRC=MMBZ5248B;DI_MMBZ5248B;Diodes;Zener 10V-50V; 18.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5248B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.3 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=17.1 N=3.00 ) .ENDS *SRC=MMBZ5248BS;DI_MMBZ5248BS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5248BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=53.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 ) SRC=MMBZ5248BT;DI_MMBZ5248BT;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5248BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=9.90 N=3.00 ) .ENDS *SRC=MMBZ5248BTS;DI_MMBZ5248BTS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5248BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=53.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 ) *SRC=MMBZ5248BW;DI_MMBZ5248BW;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5248BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 ) *SRC=MMBZ5250B;DI_MMBZ5250B;Diodes;Zener 10V-50V; 20.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5250B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.2 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=21.1 N=3.00 ) .ENDS *SRC=MMBZ5250BS;DI_MMBZ5250BS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5250BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=50.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 ) *SRC=MMBZ5250BT;DI_MMBZ5250BT;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5250BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.18e-016 RS=12.5 N=3.00 ) *SRC=MMBZ5250BTS;DI_MMBZ5250BTS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5250BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=50.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 ) *SRC=MMBZ5250BW;DI_MMBZ5250BW;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5250BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 ) *SRC=MMBZ5251B;DI_MMBZ5251B;Diodes;Zener 10V-50V; 22.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5251B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.1 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=25.1 N=3.00 ) .ENDS *SRC=MMBZ5251BS;DI_MMBZ5251BS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5251BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=48.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 ) *SRC=MMBZ5251BT;DI_MMBZ5251BT;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5251BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.62e-016 RS=15.1 N=3.00 ) *SRC=MMBZ5251BTS;DI_MMBZ5251BTS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5251BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=48.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 ) *SRC=MMBZ5251BW;DI_MMBZ5251BW;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5251BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 ) *SRC=MMBZ5252B;DI_MMBZ5252B;Diodes;Zener 10V-50V; 24.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5252B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.1 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=29.1 N=3.00 ) .ENDS *SRC=MMBZ5252BS;DI_MMBZ5252BS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5252BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=45.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 ) *SRC=MMBZ5252BT;DI_MMBZ5252BT;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5252BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15e-016 RS=18.1 N=3.00 ) *SRC=MMBZ5252BTS;DI_MMBZ5252BTS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5252BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=45.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 ) *SRC=MMBZ5252BW;DI_MMBZ5252BW;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5252BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 ) *SRC=MMBZ5254B;DI_MMBZ5254B;Diodes;Zener 10V-50V; 27.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5254B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.9 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=37.1 N=3.00 ) .ENDS *SRC=MMBZ5254BS;DI_MMBZ5254BS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5254BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=42.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 ) *SRC=MMBZ5254BT;DI_MMBZ5254BT;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5254BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=25.5 N=3.00 ) *SRC=MMBZ5254BTS;DI_MMBZ5254BTS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5254BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=42.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 ) *SRC=MMBZ5254BW;DI_MMBZ5254BW;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5254BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 ) *SRC=MMBZ5255B;DI_MMBZ5255B;Diodes;Zener 10V-50V; 28.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5255B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.8 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=26.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=40.1 N=3.00 ) .ENDS *SRC=MMBZ5255BS;DI_MMBZ5255BS;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5255BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=41.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 ) *SRC=MMBZ5255BT;DI_MMBZ5255BT;Diodes;Zener 10V-50V; 28.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5255BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.21p RS=26.7 N=1.10 + CJO=26.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41e-016 RS=26.7 N=3.00 ) *SRC=MMBZ5255BTS;DI_MMBZ5255BTS;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5255BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=41.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 ) *SRC=MMBZ5255BW;DI_MMBZ5255BW;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5255BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=26.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 ) *SRC=MMBZ5256B;DI_MMBZ5256B;Diodes;Zener 10V-50V; 30.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5256B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.7 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=45.1 N=3.00 ) .ENDS *SRC=MMBZ5256BS;DI_MMBZ5256BS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5256BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=40.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 ) *SRC=MMBZ5256BT;DI_MMBZ5256BT;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5256BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12e-016 RS=30.5 N=3.00 ) *SRC=MMBZ5256BTS;DI_MMBZ5256BTS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5256BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=40.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 ) *SRC=MMBZ5256BW;DI_MMBZ5256BW;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5256BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 ) *SRC=MMBZ5257B;DI_MMBZ5257B;Diodes;Zener 10V-50V; 33.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5257B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.5 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=54.1 N=3.00 ) .ENDS *SRC=MMBZ5257BS;DI_MMBZ5257BS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5257BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 ) *SRC=MMBZ5257BT;DI_MMBZ5257BT;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5257BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.5 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75e-016 RS=37.6 N=3.00 ) *SRC=MMBZ5257BTS;DI_MMBZ5257BTS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5257BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 ) *SRC=MMBZ5257BW;DI_MMBZ5257BW;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5257BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 ) *SRC=MMBZ5258B;DI_MMBZ5258B;Diodes;Zener 10V-50V; 36.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5258B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 32.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=66.1 N=3.00 ) .ENDS *SRC=MMBZ5258BS;DI_MMBZ5258BS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5258BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=38.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 ) *SRC=MMBZ5258BT;DI_MMBZ5258BT;Diodes;Zener 10V-50V; 36.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5258BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=1.72p RS=25.9 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43e-016 RS=47.1 N=3.00 ) *SRC=MMBZ5258BTS;DI_MMBZ5258BTS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5258BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=38.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 ) *SRC=MMBZ5258BW;DI_MMBZ5258BW;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5258BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 ) *SRC=MMBZ5259B;DI_MMBZ5259B;Diodes;Zener 10V-50V; 39.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5259B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 35.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=76.1 N=3.00 ) .ENDS *SRC=MMBZ5259BS;DI_MMBZ5259BS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5259BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=37.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 ) *SRC=MMBZ5259BT;DI_MMBZ5259BT;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5259BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17e-016 RS=55.7 N=3.00 ) *SRC=MMBZ5259BTS;DI_MMBZ5259BTS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5259BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=37.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 ) *SRC=MMBZ5259BW;DI_MMBZ5259BW;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5259BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 ) *SRC=MMDT2222A;DI_MMDT2222A;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT2222A NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2222V;DI_MMDT2222V;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Single element of dual .MODEL DI_MMDT2222V NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2222V;DI_MMDT2222V;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Single element of dual .MODEL DI_MMDT2222V NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2227;DI_MMDT2227_PNP;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT2227M;DI_MMDT2227M_NPN Element Only;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227M_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2227M;DI_MMDT2227M_PNP Element Only;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227M_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2227;DI_MMDT2227_PNP;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** ***************************************************************************************************************************************** *SRC=MMDT2907A;DI_MMDT2907A;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT2907A PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** ***************************************************************************************************************************************** *SRC=MMDT2907A;DI_MMDT2907A;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT2907A PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT2907V;DI_MMDT2907V;BJTs PNP; Si; 60.0V 0.600A 148MHz Diodes Inc. Single element of dual BJTs .MODEL DI_MMDT2907V PNP (IS=59.8f NF=1.00 BF=312 VAF=139 + IKF=0.219 ISE=25.8p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.540 RE=1.56 RB=6.25 RC=0.625 + XTB=1.5 CJE=148p VJE=1.10 MJE=0.500 CJC=47.8p VJC=0.300 + MJC=0.300 TF=912p TR=166n EG=1.12 ) *SRC=MMDT2907V;DI_MMDT2907V;BJTs PNP; Si; 60.0V 0.600A 148MHz Diodes Inc. Single element of dual BJTs .MODEL DI_MMDT2907V PNP (IS=59.8f NF=1.00 BF=312 VAF=139 + IKF=0.219 ISE=25.8p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.540 RE=1.56 RB=6.25 RC=0.625 + XTB=1.5 CJE=148p VJE=1.10 MJE=0.500 CJC=47.8p VJC=0.300 + MJC=0.300 TF=912p TR=166n EG=1.12 ) *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) *SRC=MMDT3904VC;DI_MMDT3904VC;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMDT3904VC NPN (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=426p TR=71.3n EG=1.12 ) *SRC=MMDT3906;DI_MMDT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT3906 PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 MJC=0.300 + TF=558p TR=84.1n EG=1.12 ) *SRC=MMDT3906;DI_MMDT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT3906 PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 MJC=0.300 + TF=558p TR=84.1n EG=1.12 ) *SRC=MMDT3906VC;DI_MMDT3906VC;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP .MODEL DI_MMDT3906VC PNP (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=531p TR=85.6n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 + MJC=0.300 TF=450p TR=70.2n EG=1.12 ) *SRC=MMDT3946;DI_MMDT3946_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 + MJC=0.300 TF=558p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT3946LP4;MMDT3946LP4_NPN;BJTs NPN; Si; 40.0V 0.200A 375MHz .MODEL MMDT3946LP4_NPN NPN (IS=7.48e-016 NF=1.00 BF=141 VAF=114 + IKF=0.118 ISE=6.24f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.180 RE=0.477 RB=1.91 RC=0.191 + XTB=1.5 CJE=11.1p VJE=1.10 MJE=0.500 CJC=4.97p VJC=0.300 + MJC=0.300 TF=401p TR=69.4n EG=1.12 ) *SRC=MMDT3946LP4;MMDT3946LP4_PNP;BJTs PNP; Si; 40.0V 0.200A 490MHz .MODEL MMDT3946LP4_PNP PNP (IS=5.58e-016 NF=1.00 BF=162 VAF=114 + IKF=98.0m ISE=4.72f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.865 RB=3.46 RC=0.346 + XTB=1.5 CJE=11.1p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 + MJC=0.300 TF=301p TR=52.4n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 + MJC=0.300 TF=450p TR=70.2n EG=1.12 ) *SRC=MMDT3946;DI_MMDT3946_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 + MJC=0.300 TF=558p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT4401;DI_MMDT4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4401 NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 MJC=0.300 + TF=539p TR=84.1n EG=1.12 ) *SRC=MMDT4401;DI_MMDT4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4401 NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 MJC=0.300 + TF=539p TR=84.1n EG=1.12 ) *SRC=MMDT4403;DI_MMDT4403;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4403 PNP (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=516p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT4413;DI_MMDT4413_NPN;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementaryl .MODEL DI_MMDT4413_NPN NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=539p TR=84.1n EG=1.12 ) *SRC=MMDT4413;DI_MMDT4413_PNP;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT4413_PNP PNP (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=516p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT MMDT5401 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT MMDT5401 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 .ENDS * *$ * *Diodes DMMT5451 Spice Model v1.0 Last Revised 17/02/09 * *.MODEL 5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ .MODEL 5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT MMDT5551 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 .ENDS * *$ *SRC=MMST2222A;DI_MMST2222A;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMST2222A NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=15.0p VJC=0.300 MJC=0.300 + TF=496p TR=84.1n EG=1.12 ) *SRC=MMST2907A;DI_MMST2907A;BJTs PNP; Si; 60.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMST2907A PNP (IS=59.9f NF=1.00 BF=410 VAF=139 + IKF=0.273 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.344 RB=1.38 RC=0.138 + XTB=1.5 CJE=30.2p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=513p TR=29.9n EG=1.12 ) *SRC=MMST3904;DI_MMST3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3904 NPN (IS=3.95e-016 NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=593f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.95p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 + TF=367p TR=70.2n EG=1.12 ) *SRC=MMST3904;DI_MMST3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3904 NPN (IS=3.95e-016 NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=593f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.95p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 + TF=367p TR=70.2n EG=1.12 ) *SRC=MMST3906;DI_MMST3906;BJTs PNP; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3906 PNP (IS=7.06e-016 NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=1.12p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=422p TR=84.1n EG=1.12 ) *SRC=MMST4401;DI_MMST4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMST4401 NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=MMST4403;DI_MMST4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMST4403 PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.334 ISE=24.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.825 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=31.4p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=486p TR=81.1n EG=1.12 ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMST5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMST5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMST5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMST5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ *SRC=MMST6427;DI_MMST6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMST6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) *SRC=MMSTA05;DI_MMSTA05;BJTs NPN; Si; 60.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMSTA05 NPN (IS=94.2f NF=1.00 BF=331 VAF=139 + IKF=0.146 ISE=24.9p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=633p TR=112n EG=1.12 ) *SRC=MMSTA06;DI_MMSTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMSTA06 NPN (IS=94.2f NF=1.00 BF=301 VAF=161 + IKF=0.146 ISE=27.4p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=633p TR=112n EG=1.12 ) *SRC=MMSTA06;DI_MMSTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMSTA06 NPN (IS=94.2f NF=1.00 BF=301 VAF=161 + IKF=0.146 ISE=27.4p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=633p TR=112n EG=1.12 ) *SRC=MMSTA13;DI_MMSTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=100 VAF=98.6 + IKF=0.240 ISE=29.4p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMSTA14;DI_MMSTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) *SRC=MMSTA42;DI_MMSTA42;BJTs NPN; Si; 300V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMSTA42 NPN (IS=109f NF=1.00 BF=219 VAF=312 + IKF=0.425 ISE=69.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=1.05 RE=1.21 RB=4.86 RC=0.486 + XTB=1.5 CJE=32.9p VJE=1.10 MJE=0.500 CJC=10.6p VJC=0.300 + MJC=0.300 TF=441p TR=72.5n EG=1.12 ) *SRC=MMSTA55;DI_MMSTA55;BJTs PNP; Si; 60.0V 0.500A 70.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA55 PNP (IS=50.2f NF=1.00 BF=331 VAF=139 + IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.16n TR=350n EG=1.12 ) *SRC=MMSTA56;DI_MMSTA56;BJTs PNP; Si; 80.0V 0.500A 70.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA56 PNP (IS=50.2f NF=1.00 BF=331 VAF=161 + IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.16n TR=350n EG=1.12 ) *SRC=MMSTA56;DI_MMSTA56;BJTs PNP; Si; 80.0V 0.500A 70.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA56 PNP (IS=50.2f NF=1.00 BF=331 VAF=161 + IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.16n TR=350n EG=1.12 ) *SRC=MMSTA63;DI_MMSTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT MMSTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) .ENDS *SRC=MMSTA64;DI_MMSTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMSTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) *SRC=MMSTA92;DI_MMSTA92;BJTs PNP; Si; 300V 0.100A 60.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA92 PNP (IS=53.7f NF=1.00 BF=164 VAF=312 + IKF=66.8m ISE=25.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.165 RE=0.565 RB=2.26 RC=0.226 + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300 + MJC=0.300 TF=2.46n TR=426n EG=1.12 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5221B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.65 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=MMSZ5221BS;DI_MMSZ5221BS;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5221BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=794p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5223B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMSZ5223BS;DI_MMSZ5223BS;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5223BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75m .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=463p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5225B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.3 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMSZ5225BS;DI_MMSZ5225BS;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5225BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.302 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=26.1 N=3.00 ) *DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5226B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.6 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=MMSZ5226BS;DI_MMSZ5226BS;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5226BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.634 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=251p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=24.1 N=3.00 ) *SRC=MMSZ5227BS;DI_MMSZ5227BS;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5227BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.01 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=238p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=20.1 N=3.00 ) *SRC=MMSZ5228B;DI_MMSZ5228B;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5228B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.32 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=19.1 N=3.00 ) *SRC=MMSZ5228BS;DI_MMSZ5228BS;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5228BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.32 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=19.1 N=3.00 ) *SRC=MMSZ5229B;DI_MMSZ5229B;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5229B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.73 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=18.1 N=3.00 ) *SRC=MMSZ5229BS;DI_MMSZ5229BS;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5229BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.73 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=18.1 N=3.00 ) *SRC=MMSZ5230B;DI_MMSZ5230B;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5230B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.19 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=139p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=15.1 N=3.00 ) *SRC=MMSZ5230BS;DI_MMSZ5230BS;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5230BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.19 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=139p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=15.1 N=3.00 ) *SRC=MMSZ5231B;DI_MMSZ5231B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5231B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) *SRC=MMSZ5231BS;DI_MMSZ5231BS;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5231BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) *SRC=MMSZ5232B;DI_MMSZ5232B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5232B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) *SRC=MMSZ5232BS;DI_MMSZ5232BS;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5232BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) *SRC=MMSZ5233B;DI_MMSZ5233B;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5233B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.71 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=3.11 N=3.00 ) *SRC=MMSZ5233BS;DI_MMSZ5233BS;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5233BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.71 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=3.11 N=3.00 ) *SRC=MMSZ5234B;DI_MMSZ5234B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5234B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) *SRC=MMSZ5234BS;DI_MMSZ5234BS;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5234BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) *SRC=MMSZ5235B;DI_MMSZ5235B;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5235B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) *SRC=MMSZ5235BS;DI_MMSZ5235BS;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5235BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) *SRC=MMSZ5236B;DI_MMSZ5236B;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5236B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) *SRC=MMSZ5236BS;DI_MMSZ5236BS;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5236BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) *SRC=MMSZ5237B;DI_MMSZ5237B;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5237B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.86 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=4.11 N=3.00 ) *SRC=MMSZ5237BS;DI_MMSZ5237BS;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5237BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.86 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=4.11 N=3.00 ) *SRC=MMSZ5238B;DI_MMSZ5238B;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5238B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.36 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.74f RS=4.11 N=3.00 ) *SRC=MMSZ5238BS;DI_MMSZ5238BS;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5238BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.36 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.74f RS=4.11 N=3.00 ) *SRC=MMSZ5239B;DI_MMSZ5239B;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5239B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=6.11 N=3.00 ) *SRC=MMSZ5239BS;DI_MMSZ5239BS;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5239BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=6.11 N=3.00 ) *SRC=MMSZ5240B;DI_MMSZ5240B;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5240B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.47 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=13.1 N=3.00 ) *SRC=MMSZ5240BS;DI_MMSZ5240BS;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5240BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.47 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=13.1 N=3.00 ) *SRC=MMSZ5241B;DI_MMSZ5241B;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5241B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.36 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=18.1 N=3.00 ) *SRC=MMSZ5241BS;DI_MMSZ5241BS;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5241BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.36 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=18.1 N=3.00 ) *SRC=MMSZ5242B;DI_MMSZ5242B;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5242B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.19 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=26.1 N=3.00 ) *SRC=MMSZ5242BS;DI_MMSZ5242BS;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5242BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.19 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=26.1 N=3.00 ) *SRC=MMSZ5243B;DI_MMSZ5243B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5243B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=4.82 N=3.00 ) *SRC=MMSZ5243BS;DI_MMSZ5243BS;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5243BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=4.82 N=3.00 ) *SRC=MMSZ5245B;DI_MMSZ5245B;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5245B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=6.86 N=3.00 ) *SRC=MMSZ5245BS;DI_MMSZ5245BS;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5245BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=6.86 N=3.00 ) *SRC=MMSZ5246B;DI_MMSZ5246B;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5246B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=7.04 N=3.00 ) *SRC=MMSZ5246BS;DI_MMSZ5246BS;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5246BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=7.04 N=3.00 ) *SRC=MMSZ5248B;DI_MMSZ5248B;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5248B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=9.90 N=3.00 ) *SRC=MMSZ5248BS;DI_MMSZ5248BS;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5248BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=9.90 N=3.00 ) *SRC=MMSZ5250B;DI_MMSZ5250B;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5250B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=8.47 N=3.00 ) *SRC=MMSZ5250BS;DI_MMSZ5250BS;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5250BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=8.47 N=3.00 ) *SRC=MMSZ5251B;DI_MMSZ5251B;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5251B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=15.1 N=3.00 ) *SRC=MMSZ5251BS;DI_MMSZ5251BS;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5251BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=15.1 N=3.00 ) *SRC=MMSZ5252B;DI_MMSZ5252B;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5252B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=18.1 N=3.00 ) *SRC=MMSZ5252BS;DI_MMSZ5252BS;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5252BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=18.1 N=3.00 ) *SRC=MMSZ5254B;DI_MMSZ5254B;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5254B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=25.5 N=3.00 ) *SRC=MMSZ5254BS;DI_MMSZ5254BS;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5254BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=25.5 N=3.00 ) *SRC=MMSZ5255B;DI_MMSZ5255B;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5255B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=26.7 N=3.00 ) *SRC=MMSZ5255BS;DI_MMSZ5255BS;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5255BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=26.7 N=3.00 ) *SRC=MMSZ5256B;DI_MMSZ5256B;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5256B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=30.5 N=3.00 ) *SRC=MMSZ5256BS;DI_MMSZ5256BS;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5256BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=30.5 N=3.00 ) *SRC=MMSZ5257B;DI_MMSZ5257B;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5257B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=37.6 N=3.00 ) *SRC=MMSZ5257BS;DI_MMSZ5257BS;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5257BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=37.6 N=3.00 ) *SRC=MMSZ5258B;DI_MMSZ5258B;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5258B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=5.72p RS=3.55k N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=47.1 N=3.00 ) *SRC=MMSZ5258BS;DI_MMSZ5258BS;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5258BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=47.1 N=3.00 ) *SRC=MMSZ5259B;DI_MMSZ5259B;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5259B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=55.7 N=3.00 ) *SRC=MMSZ5259BS;DI_MMSZ5259BS;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5259BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=55.7 N=3.00 ) *SRC=MMSZ5263B;MMSZ5263B;Diodes;Zener >50V; 56.0V 0.500W DIODES Zener *SYM=HZEN .SUBCKT MMSZ5263B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 53.5 .MODEL DF D ( IS=3.68p RS=28.1 N=1.10 + CJO=11.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36e-016 RS=115 N=3.00 ) .ENDS *SRC=MSB15MH; DI_MSB15MH; Diodes Inc.; Si; 1000V 1.50A Diodes Bridge -- for one element .MODEL DI_MSB15MH D ( IS=1.14457E-09 RS=19m BV=1000 IBV=5.00u + CJO=43.5p M=0.333 N=1.7 TT=4.32u ) *SRC=MSB25MH; DI_MSB25MH; Diodes Inc.; Si; 1000V 2.50A Diodes Bridge -- for one element .MODEL DI_MSB25MH D ( IS=2.3E-10 RS=11.56m BV=1000 IBV=5.00u + CJO=52.5p M=0.333 N=1.7 TT=4.32u ) *SRC=MUR120;DI_MUR120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MUR120 D ( IS=7.06e-017 RS=73.4m BV=200 IBV=2.00u + CJO=49.9p M=0.333 N=0.700 TT=36.0n ) *SRC=MURS120;DI_MURS120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS120 D ( IS=17.1n RS=20.6m BV=200 IBV=2.00u + CJO=60.0p M=0.333 N=1.73 TT=36.0n ) ************************************************************************************************************************************ *SRC=MURS140;DI_MURS140;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS140 D ( IS=17.1n RS=20.6m BV=400 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** *SRC=MURS160;DI_MURS160;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS160 D ( IS=17.1n RS=20.6m BV=600 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** *SRC=MURS320;DI_MURS320;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS320 D ( IS=11.8n RS=7.89m BV=200 IBV=5.00u + CJO=45.0p M=0.333 N=1.56 TT=36.0n ) *********************************************************************************************************************************** *PD3R1600 Spice Model v1.0 Last Revised 04/02/2014 Diodes Inc SURFACE MOUNT STANDARD RECTIFIER .MODEL DI_PD3R1600 D ( IS=240.8p RS=22.56m BV=660 IBV=10 + CJO=5.000n M=528.1m N=1.620 TT=10.00n EG=480m VJ=139.2m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=PS3S0230;DI_PD3S0230;Diodes;Si; 30.0V 0.200A 2.00ns Diodes INC Schottky Diode .MODEL DI_PD3S0230 D ( IS=400n RS=0.378 BV=30.0 IBV=2.00u + CJO=14.6p M=0.333 N=1.31 TT=2.88n ) *SRC=PD3S120L;DI_PD3S120L;Diodes;Si; 20.0V 1.00A 18.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S120L D ( IS=4.60u RS=41.2m BV=20.0 IBV=70.0u + CJO=112p M=0.333 N=1.03 TT=25.9n ) *SRC=PS3S130H;DI_PD3S130H;Diodes;Si; 30.0V 1.00A 17.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130H D ( IS=425n RS=67.9m BV=30.0 IBV=100u + CJO=97.1p M=0.333 N=1.07 TT=25.2n ) *SRC=PS3S130L;DI_PD3S130L;Diodes;Si; 30.0V 1.00A 21.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130L D ( IS=6.92u RS=35.0m BV=30.0 IBV=1.50m + CJO=97.1p M=0.333 N=0.953 TT=31.0n ) *SRC=PS3S140;DI_PD3S140;Diodes;Si; 40.0V 1.00A 27.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S140 D ( IS=91.2n RS=62.2m BV=40.0 IBV=50.0u + CJO=77.7p M=0.333 N=0.996 TT=38.9n ) *SRC=PS3S160;DI_PD3S160;Diodes;Si; 60.0V 1.00A 13.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S160 D ( IS=82.7n RS=57.6m BV=60.0 IBV=100u + CJO=92.2p M=0.333 N=1.09 TT=18.7n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=13/10/2009 *VERSION=1 * .MODEL PD3S230L D IS=1.07E-5 N=1 ISR=7E-6 NR=1 BV=33 + IBV=1E-4 NBV=5 IBVL=6E-6 NBVL=200 RS=0.035 CJO=220E-12 + VJ=0.33 M=0.40 EG=0.6 XTI=2 TRS1=6E-3 * *$ *DIODES_INC_SPICE_MODEL PD3Z284C5V6 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=02/10/15 *VERSION=1 *PINS 1=A 2=K .SUBCKT PD3Z284C5V6 1 2 * Terminals A K D1 1 2 DF DR 3 1 DR VZ 2 3 3 .MODEL DF D ( IS=24f RS=.3 N=1.1 + CJO=84p VJ=0.66 M=0.330 TT=50.1n BV=5.7 IBV=1m TBV1=.281m) .MODEL DR D ( IS=8f RS=12k N=2 EG=1.4) .ENDS * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=PDR3G;DI_PDR3G;Diodes;Si; 400V 3.00A 3.09us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR3G D ( IS=5.82n RS=13.9m BV=400 IBV=10.0u + CJO=38.5p M=0.333 N=1.70 TT=4.45u ) *SRC=PDR5G;DI_PDR5G;Diodes;Si; 400V 5.00A 3.32us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR5G D ( IS=8.05n RS=8.40m BV=400 IBV=10.0u + CJO=75.6p M=0.333 N=1.70 TT=4.78u ) *TITLE=PDR5K *DATE=1/04/2015 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL PDR5K D(IS=1n RS=.006 BV=850 IBV=50u CJO=88p M=.4 VJ=.6 N=1.5 ISR=2n TRS1=0 XTI1=3 IKF=10 TT=2u EG=1.18) * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=PDS1040;DI_PDS1040;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky .MODEL DI_PDS1040 D ( IS=2.78u RS=2.78m BV=40.0 IBV=700u + CJO=1.72n M=0.333 N=1.05 TT=14.4n ) *SRC=PDS1040CTL;Di_PDS1040CTL;Diodes;Si; 40.0V 10.0A 20.0ns Diodes Inc. 10A Dual Low VF Schottky Barrier Rectifier Per Node .MODEL Di_PDS1040CTL D ( IS=21.5u RS=4.20m BV=40.0 IBV=200u + CJO=789p M=0.333 N=1.28 TT=28.8n ) *SRC=PDS1040L;Di_PDS1040L;Diodes;Si; 40.0V 10.0A 35.0ns Diodes Inc. 10A Low VF Schottky Barrier Rectifier .MODEL Di_PDS1040L D ( IS=6.02u RS=4.20m BV=40.0 IBV=600u + CJO=2.21n M=0.333 N=1.04 TT=50.4n ) *SRC=PDS1045;Di_PDS1045;Diodes;Si; 45.0V 10.0A 31.1ns Diodes Inc. 10A Schottky Barrier Rectifier .MODEL Di_PDS1045 D ( IS=17.0u RS=4.20m BV=45.0 IBV=600u + CJO=2.25n M=0.333 N=1.11 TT=44.8n ) *SRC=PDS3100;DI_PDS3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. 3A HV Schottky Barrier Rectifier .MODEL DI_PDS3100 D ( IS=20.9u RS=13.9m BV=100 IBV=200u + CJO=305p M=0.333 N=1.70 TT=14.4n ) *DIODES_INC_SPICE_MODEL_PDS3200 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=30/06/2014 *VERSION=1 .MODEL PDS3200 D (IS=10E-9 RS=0.026 ISR=.1u BV=202.0 IBV=1u + CJO=500p M=0.4 VJ=.55 N=1 IKF=.09 EG=.95 XTI=1.5 TT=30n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=PDS340;DI_PDS340;Diodes;Si; 40.0V 3.00A 13.0ns Diodes Inc. Schottky .MODEL DI_PDS340 D ( IS=2.59u RS=13.5m BV=40.0 IBV=500u + CJO=630p M=0.333 N=1.11 TT=18.7n ) * *Zetex PDS360 Spice Model v1.0 Last Revised 20/02/09 * .MODEL PDS360 D IS=0.7E-7 N=1.02 ISR=0.94E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=8E-8 NBVL=300 RS=0.034 CJO=390E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SRC=PDS4150;DI_PDS4150;Diodes;Si; 150V 4.00A 15.0ns Diodes Inc. 4A HV Schottky Barrier Rectifier .MODEL DI_PDS4150 D ( IS=19.2u RS=5.66m BV=150 IBV=10.0u + CJO=630p M=0.333 N=1.89 TT=21.6n ) *SRC=PDS5100;DI_PDS5100;Diodes;Si; 100V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS5100 D ( IS=49.0u RS=7.63m BV=100 IBV=200u + CJO=375p M=0.333 N=1.84 TT=21.6n ) *PDS5100H Spice Model v2.0 Last Revised 05/12/2014 Diodes Inc SCHOTTKY BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL PDS5100H D ( IS=9.000n RS=18.00m BV=105.0 IBV=36.54u + CJO=836.0p M=450.0m N=970.0m TT=18.50n EG=800.0m VJ=450.0m XTI=1.500 ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=PDS540;DI_PDS540;Diodes;Si; 40.0V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS540 D ( IS=9.59u RS=10.7m BV=40.0 IBV=300u + CJO=727p M=0.333 N=1.26 TT=21.6n ) *DIODES_INC_SPICE_MODEL_PDS560 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=4/08/2014 *VERSION=1 .MODEL PDS560 D (IS=18E-8 RS=0.018 ISR=20E-8 BV=60.0 IBV=1u + CJO=500p M=0.4 VJ=.4 N=.97 IKF=.35 EG=.69 XTI=1.5 NR=1.2 TT=20n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *Zetex PDS760 Spice Model v1.0 Last Revised 24/02/09 * .MODEL PDS760 D IS=2.1E-7 N=1.02 ISR=2.6E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=5.5E-7 NBVL=350 RS=0.016 CJO=1060E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SRC=PDS835L;DI_PDS835L;Diodes;Si; 35.0V 8.00A 15.0ns Diodes Inc. 8A Low VF Schottky Barrier Rectifier .MODEL DI_PDS835L D ( IS=42.9u RS=6.30m BV=35.0 IBV=1.40m + CJO=623p M=0.333 N=1.43 TT=21.6n ) *SRC=PDU340;DI_PDU340;Diodes;Si; 400V 3.00A 50.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU340 D ( IS=3.74u RS=25.9m BV=400 IBV=10.0u + CJO=86.2p M=0.333 N=2.58 TT=72.0n ) *SRC=PDU420;DI_PDU420;Diodes;Si; 400V 4.00A 25.0ns Diodes Inc. ultrafast rectifier .MODEL DI_PDU420 D ( IS=189n RS=10.5m BV=400 IBV=5.00u + CJO=276p M=0.333 N=1.73 TT=36.0n ) *SRC=PDU540;DI_PDU540;Diodes;Si; 400V 5.00A 35.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU540 D ( IS=2.68u RS=8.33m BV=400 IBV=10.0u + CJO=196p M=0.333 N=2.27 TT=50.4n ) *SRC=PDU620;DI_PDU620;Diodes;Si; 200V 6.00A 25.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU620 D ( IS=190n RS=9.91m BV=200 IBV=5.00u + CJO=402p M=0.333 N=1.69 TT=36.0n ) *SRC=PDU620CT;DI_PDU620CT;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU620CT D ( IS=7.48n RS=19.5m BV=200 IBV=5.00u + CJO=223p M=0.333 N=1.42 TT=36.0n ) *SRC=PR1001G;DI_PR1001G;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1001G D ( IS=5.00n RS=29.8m BV=50.0 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1002G;DI_PR1002G;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1002G D ( IS=5.00n RS=29.8m BV=100 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1003G;DI_PR1003G;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1003G D ( IS=5.00n RS=29.8m BV=200 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1004G;DI_PR1004G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1004G D ( IS=5.00n RS=29.8m BV=400 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1005G;DI_PR1005G;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_PR1005G D ( IS=5.00n RS=29.8m BV=600 IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=360n ) *SRC=PR1006G;DI_PR1006G;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_PR1006G D ( IS=5.00n RS=29.8m BV=800 IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=720n ) *SRC=PR1007G;DI_PR1007G;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_PR1007G D ( IS=5.00n RS=29.8m BV=1.00k IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=720n ) *SRC=PR6001;DI_PR6001;Diodes;Si; 50.0V 6.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR6001 D ( IS=863n RS=12.6m BV=50.0 IBV=10.0u + CJO=663p M=0.333 N=1.70 TT=216n ) ******************************************************************************************************************************************* *SRC=QSBT40;DI_QSBT40;Diodes;Si; 30.0V 0.200A 50.0ns Diodes Inc. Schottky Bus - Single Device of Multiple .MODEL DI_QSBT40 D ( IS=500n RS=0.211 BV=30.0 IBV=2.00u + CJO=10.0p M=0.333 N=1.70 TT=72.0n ) ******************************************************************************************************************************************* *SRC=QZX363C12;DI_QZX363C12;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ) *SRC=QZX363C15;DI_QZX363C15;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ) *SRC=QZX363C20;DI_QZX363C20;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) *SRC=QZX363C5V6;DI_QZX363C5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ) *SRC=QZX363C6V8;DI_QZX363C6V8;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ) *SRC=QZX563C6V8C;DI_QZX563C6V8C;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_QZX563C6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23 *SRC=RH02;DI_RH02;Diodes;Si; 200V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH02 D ( IS=2.25n RS=0.100 BV=200 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH04;DI_RH04;Diodes;Si; 400V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH04 D ( IS=2.25n RS=0.100 BV=400 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH06;DI_RH06;Diodes;Si; 600V 0.500A 250ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH06 D ( IS=2.25n RS=0.100 BV=600 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=360n ) *SRC=RS1A;DI_RS1A;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1A D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* *SRC=RS1AB;DI_RS1AB;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1AB D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* *SRC=RS1B;DI_RS1B;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1B D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1BB;DI_RS1BB;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1BB D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1D;DI_RS1D;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1D D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1DB;DI_RS1DB;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1DB D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1G;DI_RS1G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1G D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1GB;DI_RS1GB;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1GB D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1J;DI_RS1J;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1J D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** *SRC=RS1JB;DI_RS1JB;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1JB D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** *SRC=RS1K;DI_RS1K;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1K D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1KB;DI_RS1KB;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1KB D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1M;DI_RS1M;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1M D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1MB;DI_RS1MB;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1MB D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=25Aug2016 *VERSION=1 .SUBCKT RS1MSWF 1 2 D1 1 2 DF D2 1 2 DR .MODEL DF D ( IS=.3p RS=.1 BV=1000 IKF=500u CJO=6p M=0.35 VJ=.65 N=1 TT=500n EG=.7 TRS1=.01m XTI=16) .model DR D(N=10 ISR=6.5n BV=1010 IBV=100u EG=.55 RS=2.6 CJO=1p VJ=.65) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=25Aug2016 *VERSION=1 .SUBCKT RS1MSWFQ 1 2 D1 1 2 DF D2 1 2 DR .MODEL DF D ( IS=.3p RS=.1 BV=1000 IKF=500u CJO=6p M=0.35 VJ=.65 N=1 TT=500n EG=.7 TRS1=.01m XTI=16) .model DR D(N=10 ISR=6.5n BV=1010 IBV=100u EG=.55 RS=2.6 CJO=1p VJ=.65) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=25Aug2016 *VERSION=1 .SUBCKT RS1MWF 1 2 D1 1 2 DF D2 1 2 DR .MODEL DF D ( IS=5p RS=.041 BV=1000 IKF=80u CJO=15p M=0.35 VJ=.65 N=1 TT=460n EG=.7 TRS1=0.01m XTI=15) .model DR D (N=10 ISR=6.5n BV=1010 IBV=100u EG=.8 RS=2 CJO=1p VJ=.65) .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=RS2A;DI_RS2A;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2A D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2AA;DI_RS2AA;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2AA D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2B;DI_RS2B;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2B D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2BA;DI_RS2BA;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2BA D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2D;DI_RS2D;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2D D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2DA;DI_RS2DA;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2DA D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2G;DI_RS2G;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2G D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2GA;DI_RS2GA;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2GA D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2J;DI_RS2J;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2J D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** *SRC=RS2JA;DI_RS2JA;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2JA D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** *SRC=RS2K;DI_RS2K;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2K D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2KA;DI_RS2KA;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2KA D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2M;DI_RS2M;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2M D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2MA;DI_RS2MA;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2MA D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS3A;DI_RS3A;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3A D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3AB;DI_RS3AB;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3AB D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3B;DI_RS3B;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3B D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3BB;DI_RS3BB;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3BB D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3D;DI_RS3D;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3D D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3DB;DI_RS3DB;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3DB D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3G;DI_RS3G;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3G D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3GB;DI_RS3GB;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3GB D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3J;DI_RS3J;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3J D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** *SRC=RS3JB;DI_RS3JB;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3JB D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** *SRC=RS3K;DI_RS3K;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3K D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3KB;DI_RS3KB;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3KB D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3M;DI_RS3M;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3M D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3MB;DI_RS3MB;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3MB D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=S1A;DI_S1A;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1A D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1AB;DI_S1AB;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1AB D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1B;DI_S1B;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1B D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1BB;DI_S1BB;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1BB D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1D;DI_S1D;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1D D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1DB;DI_S1DB;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1DB D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *TITLE=S1G-13-F *DATE=19/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model S1G-13-F D(IS=.0005n RS=0.03 CJO=17p M=0.5 VJ=0.75 N=1.1 IKF=.15 ISR=.01u + BV=401 IBV=100u TT=150n EG=.95 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=S1GB;DI_S1GB;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1GB D ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1J;DI_S1J;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1J D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1JB;DI_S1JB;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1JB D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1K;DI_S1K;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1K D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1KB;DI_S1KB;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1KB D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1M;DI_S1M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1M D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1MB;DI_S1MB;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1MB D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *SRC=S1MDFQ;DI_S1MDFQ;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1MDFQ D ( IS=100.2n RS=30.65m BV=1.417k IBV=5.00u + CJO=16.05p M=0.262 N=2.298 VJ=0.60 TT=4.32u ) *---------- S1MSWFQ Spice Model ---------- .SUBCKT S1MSWFQ 1 2 * TERMINALS: Anode Cathode D1 1 2 + D1 R1 1 2 3.216E+09 .MODEL D1 D + IS = 4.749E-10 N = 1.667 RS = 0.05177 + CJO = 1.611E-11 VJ = 0.2047 M = 0.2938 + FC = 0.5 + BV = 1174 IBV = 4.441E-10 .ENDS *Diodes_TGI S1MSWFQ Spice Model v1.0 Last Revised 2019/06/12 *SRC=S2A;DI_S2A;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2A D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2AA;DI_S2AA;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2AA D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2B;DI_S2B;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2B D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2BA;DI_S2BA;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2BA D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2D;DI_S2D;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2D D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2DA;DI_S2DA;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2DA D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2G;DI_S2G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2G D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2GA;DI_S2GA;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2GA D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2J;DI_S2J;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2J D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2JA;DI_S2JA;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2JA D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2K;DI_S2K;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2K D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2KA;DI_S2KA;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2KA D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2M;DI_S2M;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2M D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2MA;DI_S2MA;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2MA D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3D;DI_S3D;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3D D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3DB;DI_S3DB;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3DB D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S5AC;DI_S5AC;Diodes;Si; 50.0V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5AC D ( IS=2.28n RS=8.40m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5BC;DI_S5BC;Diodes;Si; 100V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5BC D ( IS=2.28n RS=8.40m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5DC;DI_S5DC;Diodes;Si; 200V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5DC D ( IS=2.28n RS=8.40m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5GC;DI_S5GC;Diodes;Si; 400V 5.00A 2.00us Diodes Inc. .MODEL DI_S5GC D ( IS=2.28n RS=8.40m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5JC;DI_S5JC;Diodes;Si; 600V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5JC D ( IS=2.28n RS=8.40m BV=600 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5KC;DI_S5KC;Diodes;Si; 800V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5KC D ( IS=2.28n RS=8.40m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5MC;DI_S5MC;Diodes;Si; 1.00kV 5.00A 2.00us Diodes Inc. - .MODEL DI_S5MC D ( IS=2.28n RS=8.40m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S8KC;S8KC;Diodes;Si; 800V 8.00A 3.00us Diodes Inc .MODEL S8KC D ( IS=777n RS=8.87m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.65 TT=4.32u ) *SRC=S8MC;S8MC;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc .MODEL S8MC D ( IS=777n RS=8.87m BV=1.00k IBV=10.0u + CJO=74.0 M=0.333 N=1.65 TT=4.32u *SRC=SB1100;DI_SB1100;Diodes;Si; 100.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB1100 D ( IS=6.63u RS=62.3m BV=100.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB120;DI_SB120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB120 D ( IS=31.5u RS=49.2m BV=20.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB130;DI_SB130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB130 D ( IS=31.5u RS=49.2m BV=30.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB140;DI_SB140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB140 D ( IS=31.5u RS=49.2m BV=40.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB150;DI_SB150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB150 D ( IS=1.17u RS=42.0m BV=50.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB160;DI_SB160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB160 D ( IS=1.17u RS=42.0m BV=60.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB170;DI_SB170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB170 D ( IS=6.63u RS=62.3m BV=70.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB180;DI_SB180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB180 D ( IS=6.63u RS=62.3m BV=80.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB190;DI_SB190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB190 D ( IS=6.63u RS=62.3m BV=90.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB340;DI_SB340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB340 D ( IS=85.9n RS=18.5m BV=40.0 IBV=70.0u + CJO=411p M=0.333 N=0.754 TT=7.20n ) *SRC=SBG3030CT;DI_SBG3030CT;Diodes;Si; 30.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3030CT D ( IS=31.1u RS=3.70m BV=30.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== *SRC=SBG3040CT;DI_SBG3040CT;Diodes;Si; 40.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3040CT D ( IS=31.1u RS=3.70m BV=40.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== *SRC=SBG3045CT;DI_SBG3045CT;Diodes;Si; 45.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3045CT D ( IS=31.1u RS=3.70m BV=45.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== *SRC=SBL1030;DI_SBL1030;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1030 D ( IS=759u RS=4.20m BV=30.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1035;DI_SBL1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1035 D ( IS=759u RS=4.20m BV=35.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1040;DI_SBL1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1040 D ( IS=759u RS=4.20m BV=40.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1045;DI_SBL1045;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1045 D ( IS=759u RS=4.20m BV=45.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1050;DI_SBL1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1050 D ( IS=210u RS=4.22m BV=50.0 IBV=1.00m + CJO=2.12n M=0.333 N=2.03 TT=7.20n ) *SRC=SBL1060;DI_SBL1060;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1060 D ( IS=210u RS=4.22m BV=60.0 IBV=1.00m + CJO=2.12n M=0.333 N=2.03 TT=7.20n ) *SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1630PT D ( IS=575u RS=3.47m BV=30.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1635PT D ( IS=575u RS=3.47m BV=35.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1640PT;DI_SBL1640PT;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1640PT D ( IS=575u RS=3.47m BV=40.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1645PT D ( IS=575u RS=3.47m BV=45.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1650PT;DI_SBL1650PT;Diodes;Si; 50.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1650PT D ( IS=89.9u RS=3.60m BV=50.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si; 60.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1660PT D ( IS=89.9u RS=3.60m BV=60.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL2040CT;DI_SBL2040CT;Diodes;Si; 40.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2040CT D ( IS=4.83m RS=2.37m BV=40.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2045CT;DI_SBL2045CT;Diodes;Si; 45.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2045CT D ( IS=4.83m RS=2.37m BV=45.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2050CT;DI_SBL2050CT;Diodes;Si; 50.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2050CT D ( IS=3.50m RS=2.11m BV=50.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.95 TT=14.4n ) *SRC=SBL3030CT;DI_SBL3030CT;Diodes;Si; 30.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3030CT D ( IS=200u RS=1.92m BV=30.0 IBV=1.00m + CJO=809p M=0.333 N=1.42 TT=14.4n ) *SRC=SBL3040CT;DI_SBL3040CT;Diodes;Si; 40.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3040CT D ( IS=200u RS=1.92m BV=40.0 IBV=1.00m + CJO=809p M=0.333 N=1.42 TT=14.4n ) *SRC=SBL30L30CT;DI_SBL30L30CT;Diodes;Si; 30.0V 30.0A 50.0ns Diodes INC Schottky Rectifier .MODEL DI_SBL30L30CT D ( IS=60.6u RS=2.64m BV=30.0 IBV=1.50m + CJO=3.05u M=0.333 N=1.22 TT=72.0n *SRC=SBL4030PT;DI_SBL4030PT;Diodes;Si; 30.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4030PT D ( IS=10.9u RS=1.53m BV=30.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4035PT;DI_SBL4035PT;Diodes;Si; 35.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4035PT D ( IS=10.9u RS=1.53m BV=35.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4040PT;DI_SBL4040PT;Diodes;Si; 40.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4040PT D ( IS=10.9u RS=1.53m BV=40.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4045PT;DI_SBL4045PT;Diodes;Si; 45.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4045PT D ( IS=10.9u RS=1.53m BV=45.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4050PT;DI_SBL4050PT;Diodes;Si; 50.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4050PT D ( IS=53.0u RS=1.26m BV=50.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.70 TT=14.4n ) *SRC=SBL4060PT;DI_SBL4060PT;Diodes;Si; 60.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4060PT D ( IS=53.0u RS=1.26m BV=60.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.70 TT=14.4n ) *SRC=SBL530;DI_SBL530;Diodes;Si; 30.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL530 D ( IS=926u RS=9.47m BV=30.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL535;DI_SBL535;Diodes;Si; 35.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL535 D ( IS=926u RS=9.47m BV=35.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL540;DI_SBL540;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL540 D ( IS=926u RS=9.47m BV=40.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL545;DI_SBL545;Diodes;Si; 45.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL545 D ( IS=926u RS=9.47m BV=45.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL550;DI_SBL550;Diodes;Si; 50.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL550 D ( IS=14.0u RS=8.33m BV=50.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL560;DI_SBL560;Diodes;Si; 60.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL560 D ( IS=14.0u RS=8.33m BV=60.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL6030PT;DI_SBL6030PT;Diodes;Si; 30.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6030PT D ( IS=1.93m RS=917u BV=30.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.68 TT=14.4n ) *SRC=SBL6040PT;DI_SBL6040PT;Diodes;Si; 40.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6040PT D ( IS=1.93m RS=917u BV=40.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.68 TT=14.4n ) *SRC=SBL6050PT;DI_SBL6050PT;Diodes;Si; 50.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6050PT D ( IS=353u RS=909u BV=50.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) *SRC=SBL6060PT;DI_SBL6060PT;Diodes;Si; 60.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6060PT D ( IS=353u RS=909u BV=60.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) *SBR0230T5 Spice Model v1.0 Last Revised 1/12/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30LP3 D ( IS=54.13n RS=378.1m BV=50.00 IBV=10.00 + CJO=237.7p M=526.0m N=1.032 TT=10.00n EG=480.0m VJ=12.71m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBR02M30LP Spice Model v1.0 Last Revised 1/20/2017 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR02M30LP D ( IS=87.49n RS=387.2m BV=35.00 IBV=1.000m + CJO=59.00p M=110.0k N=1.045 TT=20.00n EG=480.0m VJ=1.100 ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan .MODEL SBR02U100LP D ( + IS=37.999E-9 + N=1.2423 + RS=1.0042 + IKF=6.4683E-3 + CJO=138.07E-12 + M=1.4985 + VJ=.79033 + ISR=7.0384E-12 + NR=4.9950 + BV=103 + IBV=1.0000E-3 + XTI=2.67 ) *SBR0330CW Spice Model v1.0 Last Revised 9/29/2020 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR0330CW D ( IS=581.5n RS=527.7m BV=34.00 IBV=10.00 + CJO=180.0p M=610.0m N=1.119 TT=15.00n EG=480.0m VJ=50.00m ) *SBR0560S1 Spice Model v1.0 Last Revised 5/24/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR0560S1 D ( IS=2.051u RS=136.4m BV=66.0 IBV=10.00 + CJO=810.0p M=569.3m N=1.063 TT=7.792n EG=480.0m VJ=35.54m ) *SRC=SBR05U20LP;DI_SBR05U20LP;Diodes;Si; 20.0V 0.500A 40.0ns Diodes INC Schottky rectifier .MODEL DI_SBR05U20LP D ( IS=2.83u RS=0.188 BV=20.0 IBV=20.0u + CJO=53.0p M=0.333 N=1.18 TT=57.6n ) *SBR10U200P5 Spice Model v1.0 Last Revised 2/24/2015 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR10U200P5 D ( IS=35.49n RS=15.06m BV=220.0 IBV=10.00 + CJO=1.190n M=412.1m N=1.366 TT=21.70n EG=480.0m VJ=61.27m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR10U40CT;DI_SBR10U40CT;Diodes;Si; 40.0V 5.00A 35.0ns Diodes INC SBR rectifier .MODEL DI_SBR10U40CT D ( IS=6.83m RS=6.69u BV=40.0 IBV=0.100 + CJO=593p M=0.333 N=7.19 TT=50.4n ) *DIODES_INC_SPICE_MODEL SBR10U45SP5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=3/10/2012 *VERSION=1 .MODEL SBR10U45SP5 D( IS=28E-6 RS=10m BV=46.0 IBV=300u N=.97 TT=10n EG=.48 TRS1=4m CJO=12590p M=.8 VJ=.4) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * *SBR12U120P5 Spice Model v1.0 Last Revised 3/28/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR12U120P5 D ( IS=3.440u RS=40.05m BV=135.0 IBV=10.00 + CJO=3.462n M=3.523 N=1.047 TT=10.00n EG=480.0m VJ=682.4m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan The SBR12U45LH uses SBR patented technology that offers ultra low VF to reduce forward power loss and improve efficiency. Encapsulated in the new PDI-5SP package with a 0.75mm low height profile and protruding leads for easy soldering, it is specially suited for use as a bypass diode in solar panels. *SBR12U45LH1 Spice Model v1.0 Last Revised 10/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR12U45LH1 D ( IS=29.84u RS=6.504m BV=50.00 IBV=10.00 + CJO=10.37n M=523.4m N=1.052 TT=34.00n EG=480.0m VJ=32.79m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR130S3;SBR130S3;Diodes;Si; 30.0V 1.00A 39.0ns Diodes .MODEL SBR130S3 D ( IS=7.30u RS=80.3m BV=30.0 IBV=12.2u + CJO=416p M=0.333 N=1.09 TT=56.2n *SBRT15U50SP5 Spice Model v1.0 Last Revised 10/30/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U50SP5 D ( IS=74.23u RS=5.775m BV=55.00 IBV=10.00 + CJO=14.41n M=489.9m N=1.023 TT=49.80n EG=480.0m VJ=20.30m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBR1U150SA Spice Model v1.0 Last Revised 05/07/2014 Diodes Inc SURFACE MOUNT SUPER BARRIER RECTIFIER .MODEL DI_SBR1U150SA D ( IS=1.020m RS=1.983u BV=165.00 IBV=10.00 + CJO=1.164n M=461.9m N=3.651 TT=10.00n EG=480.0m VJ=12.68m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE=SBR1U200P1 *DATE=5/02/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=2 .SUBCKT SBR1U200P1 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D(IS=55n RS=1.8 BV=201 IBV=50u CJO=355p M=.41 VJ=.41 N=1.05 ISR=20n IKF=10m TRS1=.001 XTI1=3 TT=50n EG=.6 TIKF=.1) .model Dpn D(IS=8p IKF=30m BV=250 N=1 TT=50n EG=1.12 RS=.008 ISR=.1n) .ends * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE: SBR2U10LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Dec2014 *VERSION=1 .MODEL SBR1U30CSP D( IS=5.5u RS=50m BV=32 IBV=150.0u CJO=750p M=1 VJ=.45 N=1.05 TT=30n EG=.5 TRS1=5m IKF=85m) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE: SBR2U10LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Dec2014 *VERSION=1 .MODEL SBR1U30CSP D( IS=5.5u RS=45m BV=32 IBV=150.0u CJO=750p M=1 VJ=.45 N=1.05 TT=30n EG=.5 TRS1=5m IKF=85m) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE=SBR1U400P1 *DATE=12/03/2012 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL SBR1U400P1 D(IS=70n RS=.05 BV=401 IBV=50u CJO=65p M=.41 VJ=.41 N=1.25 ISR=20n IKF=.51m TRS1=0 XTI1=3 TT=85n EG=.75 TIKF=.1) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE: SBR1U40LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=27Apr2012 *VERSION=1 *PIN 1=Anode 2=Cathode .SUBCKT SBR1U40LP 1 2 M1 3 4 5 5 NMOD D1 5 3 DMOD R1 1 4 1u C1 3 5 1p R2 1 5 1u R3 3 2 1u .MODEL NMOD NMOS(LEVEL=3 VTO=.24 TOX=90E-10 NSUB=6E+15 KP=40 NFS=.2E+12 RS=0.3) .MODEL DMOD D(IS=5.7E-7 TT=3u N=1.74) .ENDS .SIMULATOR DEFAULT * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=SBR20A200CTB;DI_SBR20A200CTB;Diodes;Si; 200V 20.0A 20.0ns Diodes INC Schottky rectifier .MODEL DI_SBR20A200CTB D ( IS=4.16m RS=1.34m BV=200 IBV=3.28u + CJO=514p M=0.333 N=3.98 TT=28.8n *SBR20M150D1Q Spice Model v1.0 Last Revised 7/19/2019 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR20M150D1Q D ( IS=11.31u RS=23.20m BV=165.0 IBV=10.00 + CJO=11.60n M=552.0m N=1.329 TT=24.00n EG=480.0m VJ=13.53m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR20U150CT;DI_SBR20U150CT;Diodes;Si; 150V 20.0A 30.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR20U150CT D ( IS=3.25m RS=2.57m BV=150 IBV=500u + CJO=11.3n M=0.333 N=3.28 TT=43.2n ) *SRC=SBR20U150CTFP;DI_SBR20U150CTFP;Diodes;Si; 150V 20.0A 30.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR20U150CTFP D ( IS=3.25m RS=2.57m BV=150 IBV=500u + CJO=11.3n M=0.333 N=3.28 TT=43.2n ) *SRC=SBR2A30P1;DI_SBR2A30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A30P1 D ( IS=78.9u RS=29.8m BV=30.0 IBV=60.0u + CJO=806p M=0.333 N=1.25 TT=17.3n) *SRC=SBR2A40P1;DI_SBR2A40P1;Diodes;Si; 40.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A40P1 D ( IS=17.0u RS=28.8m BV=40.0 IBV=15.9u + CJO=705p M=0.333 N=1.17 TT=17.3n) *SRC=SBR2M30P1;DI_SBR2M30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2M30P1 D ( IS=17.0u RS=28.8m BV=30.0 IBV=20.0u + CJO=865p M=0.333 N=1.17 TT=17.3n) *SBR2M60S1F Spice Model v1.0 Last Revised 7/18/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR2M60S1F D ( IS=122.1n RS=66.59m BV=66.0 IBV=10.00 + CJO=1.674n M=463.4m N=1.075 TT=12.00n EG=480.0m VJ=13.64m ) *SBR2U100LP Spice Model v1.0 Last Revised 3/22/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR2U100LP D ( IS=2.009u RS=46.88m BV=111.00 IBV=10.00 + CJO=723.7p M=638.1m N=1.587 TT=21.8n EG=480.0m VJ=52.26m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE: SBR2U10LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=9Jun2014 *VERSION=1 .MODEL SBR2U10LP D( IS=26u RS=20m BV=11 IBV=150.0u CJO=790p M=0.65 VJ=.4 N=1.05 TT=50n EG=.5 TRS1=6m ISR=50u) * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE: SBR2U150SA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=16Dec2014 *VERSION=1 .SUBCKT SBR2U150SA 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D ( IS=4u RS=.3 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145 TT=17.3n EG=.5 TRS1=3m NBV=10 IKF=200m) .model Dpn D(IS=2p IKF=20000m BV=160 TT=50n EG=1.12 RS=.02 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE: SBR2U30P1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Jan2012 *VERSION=2 *PIN 1=Anode 2=Cathode .MODEL SBR2U30P1 D( IS=60u RS=25m BV=32.0 IBV=150.0u CJO=951p M=0.333 N=1.14 TT=17.3n EG=.5 TRS1=3m NBV=10) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SBR2U60S1F Spice Model v1.0 Last Revised 6/26/2017 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR2U60S1F D ( IS=12.49u RS=58.29m BV=62.00 IBV=10.00 + CJO=1.727n M=2.037 N=1.060 TT=1.82n EG=480.0m VJ=357.3m ) * (c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR3045CT;DI_SBR3045CT;Diodes;Si; 45.0V 30.0A 35.2ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3045CT D ( IS=2.03m RS=2.30m BV=45.0 IBV=500u + CJO=1.87n M=0.333 N=1.66 TT=50.7n ) *SRC=SBR30A45CT;DI_SBR30A45CT;Diodes;Si; 45.0V 30.0A 35.2ns Diodes Inc. SBR/ SKY .MODEL DI_SBR30A45CT D ( IS=120u RS=1.66m BV=45.0 IBV=500u + CJO=1.87n M=0.333 N=1.18 TT=50.7n ) *SRC=SBR30U30CT;DI_SBR30U30CT;Diodes;Si; 20.0V 30.0A 35.0ns Diodes INC Schottky rectifier .MODEL DI_SBR30U30CT D ( IS=580u RS=3.06m BV=20.0 IBV=230u + CJO=997p M=0.333 N=1.35 TT=50.4n *TITLE: SBR3150SB *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=16Dec2014 *VERSION=1 .SUBCKT SBR3150SB 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D ( IS=11u RS=.22 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145 TT=17.3n EG=.47 TRS1=2m NBV=10 IKF=120m) .model Dpn D(IS=2p IKF=100 BV=160 TT=50n EG=1.1 RS=.011 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=SBR3A40SA;DI_SBR3A40SA;Diodes;Si; 40.0V 3.00A 12.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3A40SA D ( IS=165u RS=18.5m BV=40.0 IBV=400u + CJO=57.0p M=0.333 N=1.26 TT=17.3n ) *SRC=SBR3M30P1;DI_SBR3M30P1;Diodes;Si; 30.0V 3.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR3M30P1 D ( IS=11.4u RS=10.6m BV=30.0 IBV=19.0u + CJO=865p M=0.333 N=1.13 TT=17.3n) *SRC=SBR3U100LP;DI_SBR3U100LP;Diodes;Si; 100V 3.00A 12.9ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3U100LP D ( IS=8.73n RS=34.4m BV=100 IBV=16.0u + CJO=141p M=0.333 N=0.700 TT=18.6n ) *SRC=SBR3U150LP;DI_SBR3U150LP;Diodes;Si; 150V 3.00A 11.5ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3U150LP D ( IS=311u RS=22.4m BV=150 IBV=600n + CJO=178p M=0.333 N=2.78 TT=16.6n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=02/07/2009 *VERSION=3 *PIN_ORDER anode cathode * .SUBCKT SBR3U20SA 1 2 D1 1 3 Dmod R1 3 2 95 L1 3 2 1.8E-9 .MODEL Dmod D (IS=8E-5 N=1.1 ISR=5E-8 NR=1.0 BV=21 IBV=1E-3 NBV=5 + IBVL=2E-6 NBVL=500 RS=0.015 CJO=3500E-12 VJ=0.38 M=0.7 EG=0.5 XTI=2 + TRS1=0.003 TT=3e-9) .ENDS * *$ *SRC=SBR3U30P1;DI_SBR3U30P1;Diodes;Si; 30.0V 3.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR3U30P1 D ( IS=1.14m RS=11.7m BV=30.0 IBV=146u + CJO=951p M=0.333 N=1.71 TT=17.3n) *TITLE: SBR3U40P1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1May2012 *VERSION=1 .MODEL SBR3U40P1 D( IS=20E-6 RS=35m BV=41.0 IBV=70u N=1 TT=10n EG=.53 TRS1=5m CJO=500p M=.6 VJ=.4) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SBR3U60P1 Spice Model v1.0 Last Revised 04/29/2014 Diodes Inc SUPER BARRIER RECTIFIER .MODEL DI_SBR3U60P1 D ( IS=1.638u RS=62.49m BV=66.00 IBV=10.00 + CJO=1.853n M=761.6m N=1.048 TT=10.00n EG=480.0m VJ=173.8m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBR40U300CTB Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR40U300CTB D ( IS=233.1n RS=16.34m BV=330.0 IBV=10.00 + CJO=1.055n M=487.5m N=1.424 TT=33.00n EG=480.0m VJ=504.9m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR40U45CT;DI_SBR40U45CT;Diodes;Si; 45.0V 40.0A 74.0ns Diodes INC Schottky rectifier .MODEL DI_SBR40U45CT D ( IS=30.5m RS=1.77m BV=45.0 IBV=250u + CJO=8.18n M=0.333 N=2.24 TT=107n .MODEL SBR4U130LP D ( + IS=15.568E-6 + N=1.031 + RS=20e-3 + IKF=257.62E-6 + CJO=5.0982E-9 + M=1.0812 + VJ=68.681E-3 + ISR=38.247E-9 + NR=4.9950 + BV=130.27 + IBV=100.00E-6 + XTI=2.89 ) *SBR545SAFQ-13 Spice Model v1.0 Last Revised 11/14/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR545SAFQ-13 D ( IS=15.81u RS=24.82m BV=60.0 IBV=10.00 + CJO=3.030n M=542.8m N=1.108 TT=14.88n EG=480.0m VJ=33.17m ) * (c) 2019 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBR60A300CT Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR60A300CT D ( IS=3.829u RS=25.27m BV=330.0 IBV=10.00 + CJO=1.006n M=557.8m N=1.413 TT=25.00n EG=480.0m VJ=826.8m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SBR60A60CT;DI_SBR60A60CT;Diodes;Si; 60.0V 60.0A 68.0ns Diodes INC Schottky rectifier .MODEL DI_SBR60A60CT D ( IS=1.44m RS=1.34m BV=60.0 IBV=70.0u + CJO=7.24n M=0.333 N=1.72 TT=97.9n ) *SBR6100CTLQ Spice Model v1.0 Last Revised 7/20/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR6100CTLQ D ( IS=388.8n RS=35.91m BV=110.0 IBV=10.00 + CJO=2.366n M=532.4m N=1.117 TT=12.00n EG=480.0m VJ=19.00m) *SRC=SBR8U60P5;;Diodes;Si; 60.0V 8.00A 25.0ns Diodes INC SBR rectifier .MODEL D ( IS=75.3u RS=20.1m BV=60.0 IBV=600u + CJO=13.3n M=0.333 N=1.10 TT=36.0n ) *SBRT10M50SP5 Spice Model v1.0 Last Revised 11/06/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT10M50SP5 D ( IS=29.37u RS=7.908m BV=55.00 IBV=10.00 + CJO=5.720n M=433.9m N=1.018 TT=36.10n EG=480.0m VJ=40.85m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT10U50SP5 Spice Model v1.0 Last Revised 11/06/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT10U50SP5 D ( IS=47.29u RS=7.545m BV=55.00 IBV=10.00 + CJO=5.815n M=426.5m N=1.010 TT=38.20n EG=480.0m VJ=35.52m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT15U100SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U100SP5 D ( IS=14.76u RS=19.00m BV=110.00 IBV=10.00 + CJO=10.76n M=519.9m N=1.023 TT=29.10n EG=480.0m VJ=14.89m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT15U50SP5 Spice Model v1.0 Last Revised 7/12/2017 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U50SP5 D ( IS=74.23u RS=5.775m BV=54.00 IBV=10.00 + CJO=14.41n M=489.9m N=1.023 TT=49.80n EG=480.0m VJ=20.30m ) * (c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT20M60SP5 Spice Model v1.0 Last Revised 05/23/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT20M60SP5 D ( IS=17.25u RS=7.887m BV=66.00 IBV=10.00 + CJO=14.41n M=526.0m N=1.019 TT=44.20n EG=480.0m VJ=21.52m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT20U50SLP Spice Model v1.0 Last Revised 04/16/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER .MODEL DI_SBRT20U50SLP D ( IS=60.50u RS=6.029m BV=55.00 IBV=10.00 + CJO=13.00n M=473.3m N=1.017 TT=10.00n EG=480.0m VJ=20.19m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT20U60SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT20U60SP5 D ( IS=53.48u RS=7.620m BV=66.00 IBV=10.00 + CJO=14.07n M=529.3m N=1.019 TT=43.20n EG=480.0m VJ=23.66m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT25M50SLP Spice Model v1.0 Last Revised 05/20/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT25M50SLP D ( IS=21.40u RS=5.797m BV=55.00 IBV=10.00 + CJO=21.87n M=530.5m N=1.014 TT=59.50n EG=480.0m VJ=19.30m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE=SBRT30u45CT *DATE=28/1/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL SBRT30U45CT D(IS=100u RS=.005 BV=48 IBV=110u CJO=4000p M=.6 VJ=.4 N=1.05 ISR=20n IKF=15 TRS1=4m XTI1=3 TT=85n EG=.51 NBV=200) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SBRT3M40SA Spice Model v1.0 Last Revised 04/21/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3M40SA D ( IS=8.986u RS=29.32m BV=45.00 IBV=10.00 + CJO=1.880n M=259.7m N=1.047 TT=10.00n EG=480.0m VJ=140.3u ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT3M60P1 Spice Model v1.0 Last Revised 2/13/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBRT3M60P1 D ( IS=1.813u RS=46.73m BV=61.00 IBV=10.00 + CJO=2.515n M=513.9m N=1.040 TT=12.00n EG=480.0m VJ=12.99m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT3U40P1 Spice Model v1.0 Last Revised 05/28/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3U40P1 D ( IS=11.26u RS=31.17m BV=45.00 IBV=10.00 + CJO=2.602n M=426.4m N=1.031 TT=12.40n EG=480.0m VJ=6.740m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT3U45SA Spice Model v1.0 Last Revised 04/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3U45SA D ( IS=16.77u RS=32.93m BV=50.50 IBV=10.00 + CJO=1.717n M=325.5m N=1.065 TT=10.00n EG=480.0m VJ=1.538m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT40V100CT Spice Model v1.0 Last Revised 05/14/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT40V100CT D ( IS=27.99u RS=16.00m BV=110.0 IBV=10.00 + CJO=11.96n M=452.9m N=1.016 TT=30.30n EG=480.0m VJ=3.448m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT5A50SA Spice Model v1.0 Last Revised 04/23/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT5A50SA D ( IS=11.30u RS=22.68m BV=56.00 IBV=10.00 + CJO=1.998n M=448.8m N=1.040 TT=10.00n EG=480.0m VJ=33.67m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT5A50SAF Spice Model v1.0 Last Revised 04/11/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER .MODEL DI_SBRT5A50SAF D ( IS=16.70u RS=25.96m BV=61 IBV=10 + CJO=1.986n M=388.7m N=1.052 TT=10.00n EG=480.0m VJ=11.34m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT60U100CT Spice Model v1.0 Last Revised 04/15/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT60U100CT D ( IS=25.99u RS=12.84m BV=110.0 IBV=10.00 + CJO=17.15n M=505.1m N=1.027 TT=44.60n EG=480.0m VJ=10.13m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SBRT6U20LP Spice Model v1.0 Last Revised 6/27/2017 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBRT6U20LP D ( IS=38.15u RS=10.89m BV=22.00 IBV=10.00 + CJO=8.554n M=708.2m N=1.034 TT=1.627n EG=480.0m VJ=96.07m ) * (c) 2017 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SD101AW;DI_SD101AW;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101AW D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) ******************************************************************************************************************************************* *SRC=SD101AWS;DI_SD101AWS;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky- SD101AWS/BWS/CWS .MODEL DI_SD101AWS D ( IS=230n RS=2.13 BV=60.0 IBV=200n + CJO=2.00p M=0.333 N=1.96 TT=1.44n ) ******************************************************************************************************************************************* *SRC=SD101BW;DI_SD101BW;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BW D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101BWS;DI_SD101BWS;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BWS D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101CW;DI_SD101CW;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CW D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101CWS;DI_SD101CWS;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CWS D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD103ASDM;DI_SD103ASDM;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, quad, one node of four .MODEL DI_SD103ASDM D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) *SRC=SD103ATW;DI_SD103ATW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, tripple, one node of three .MODEL DI_SD103ATW D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) *SRC=SD103AW;DI_SD103AW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AW D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103AWS;DI_SD103AWS;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AWS D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103BW;DI_SD103BW;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103BW D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103BWS;DI_SD103BWS;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103BWS D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103CW;DI_SD103CW;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CW D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103CWS;DI_SD103CWS;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CWS D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD830;DI_SD830;Diodes;Si; 30.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD830 D ( IS=248u RS=5.25m BV=30.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SD840;DI_SD840;Diodes;Si; 40.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD840 D ( IS=248u RS=5.25m BV=40.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SD845;DI_SD845;Diodes;Si; 45.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD845 D ( IS=248u RS=5.25m BV=45.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SD860;DI_SD860;Diodes;Si; 60.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD860 D ( IS=248u RS=5.25m BV=60.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SDA006;DI_SDA006;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Databus Transient Suppressor - Model is for one Diode Element .MODEL DI_SDA006 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SDM02M30LP3 Spice Model v1.0 Last Revised 8/31/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02M30LP3 D ( IS=25.07n RS=444.1p BV=50.00 IBV=10.00 + CJO=45.92p M=357.3m N=285.5 TT=10.00n EG=480.0m VJ=1.309m ) * (c) 2016 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SDM02U30CSP Spice Model v1.0 Last Revised 8/31/2016 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30CSP D ( IS=276.7n RS=424.6p BV=50.00 IBV=10.00 + CJO=261.8p M=526.0m N=625.2p TT=1.627n EG=480.0m VJ=8.630m ) * (c) 2016 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *TITLE=SDM02U30LP3 *DATE=30/08/2016 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL SDM02U30LP3 D(IS=.22u RS=2.2 BV=33 IBV=110u CJO=6p M=.33 VJ=.4 N=1 ISR=1u IKF=100m TRS1=5m XTI1=3 TT=30n EG=.54 NBV=2) * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=SDM03MT40;DI_SDM03MT40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM03MT40 D ( IS=309u RS=0.210 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=6.81 TT=7.20n ) *SRC=SDM03U40;DI_SDM03U40;Diodes;Si; 30.0V 30.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SDM03U40 D ( IS=16.5u RS=2.20 BV=30.0 IBV=500n + CJO=2.59p M=0.333 N=2.92 TT=1.44n ) *SDM05A30CP3 Spice Model v1.0 Last Revised 10/18/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM05A30CP3 D ( IS=159.2n RS=319.8m BV=33.0 IBV=10.00 + CJO=82.04p M=294.4m N=1.092 TT=4.096n EG=480.0m VJ=3.281m ) *SRC=SDM100K30L;DI_SDM100K30L;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_SDM100K30L D ( IS=255n RS=0.108 BV=30.0 IBV=100u + CJO=53.4p M=0.333 N=0.927 TT=14.4n ) *SRC=SDM10M45SD;DI_SDM10M45SD;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10M45SD D ( IS=290n RS=0.420 BV=45.0 IBV=1.00u + CJO=10.6p M=0.333 N=1.28 TT=7.20n ) *SRC=SDM10P45;DI_SDM10P45;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10P45 D ( IS=745n RS=0.792 BV=45.0 IBV=1.00u + CJO=11.2p M=0.333 N=1.39 TT=7.20n ) *SRC=SDM10U45;DI_SDM10U45;Diodes;Si; 45.0V 0.100A 2.00ns Diodes Inc. SBR/ SKY .MODEL DI_SDM10U45 D ( IS=7.68u RS=1.32 BV=45.0 IBV=1.00u + CJO=13.3p M=0.333 N=1.81 TT=2.88n ) *SRC=SDM10U45LP;DI_SDM10U45LP;Diodes;Si; 40.0V 0.300A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10U45LP D ( IS=26.8u RS=0.140 BV=40.0 IBV=1.00u + CJO=10.6p M=0.333 N=2.45 TT=7.20n ) *SDM1100S1F Spice Model v1.0 Last Revised 1/19/2018 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM1100S1F D ( IS=5.225n RS=119.2m BV=104.0 IBV=10.00 + CJO=223.1p M=336.8m N=1.126 TT=9.5n EG=480.0m VJ=24.16m ) * (c) 2018 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SDM1L30BLP Spice Model v1.0 Last Revised 04/10/2014 Diodes Inc Surface Mount Schottky Bridge .MODEL DI_SDM1L30BLP D ( IS=26.03u RS=46.51m BV=33 IBV=10 + CJO=516.8p M=443.9m N=1.030 TT=10.00n EG=480.0m VJ=396.1m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SDM20E40C;DI_SDM20E40C;Diodes;Si; 40.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20E40C D ( IS=3.15u RS=0.165 BV=40.0 IBV=70.0u + CJO=39.8p M=0.333 N=1.16 TT=7.20n ) *SRC=SDM20N40A;DI_SDM20N40A;Diodes;Si; 40.0V 0.200A 5.00ns Diodes, Inc. Dual Schottky, Model for Single Schottky Only .MODEL DI_SDM20N40A D ( IS=34.0p RS=0.211 BV=40.0 IBV=15.0u + CJO=50.0p M=0.333 N=1.73 TT=7.20n *SRC=SDM20U30;DI_SDM20U30;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20U30 D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u + CJO=19.9p M=0.333 N=0.700 TT=7.20n ) *SRC=SDM20U30LP;DI_SDM20U30LP;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20U30LP D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u + CJO=19.9p M=0.333 N=0.700 TT=7.20n ) *SRC=SDM20U40;DI_SDM20U40;Diodes;Si; 40.0V 0.250A 10.0ns Diodes Inc. Schottky .MODEL DI_SDM20U40 D ( IS=4.32u RS=0.168 BV=40.0 IBV=5.00u + CJO=39.8p M=0.333 N=1.70 TT=14.4n ) SDM2U30CSP Spice Model v1.0 Last Revised 8/11/2015 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDM02U30LP3 D ( IS=10.49u RS=43.16m BV=100.00 IBV=200.00u + CJO=375.0p M=333.0m N=1.146 TT=21.6n EG=480.0m VJ=600.0m ) * (c) 2015 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan *SRC=SDM40E20LC;DI_SDM40E20LC;Diodes;Si; 20.0V 0.400A 10.0ns Diodes INC Schottky Diode .MODEL DI_SDM40E20LC D ( IS=2.83m RS=23.0m BV=20.0 IBV=250u + CJO=66.3p M=0.333 N=2.17 TT=14.4n *SRC=SDM40E20LS;DI_SDM40E20LS;Diodes;Si; 20.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM40E20LS D ( IS=54.8u RS=0.132 BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.34 TT=7.20n ) *SRC=SDM6CC;DI_SDM6CC;Diodes;Si; 30.0V 0.200A 1.30ns Diodes INC Schottky Diode .MODEL DI_SDM6CC D ( IS=2.73u RS=0.653 BV=30.0 IBV=700n + CJO=5.30p M=0.333 N=1.98 *SRC=SDMG0340L;DI_SDMG0340L;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. .MODEL DI_SBMG0340L D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LA;DI_SDMG0340LA;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LA D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LC;DI_SDMG0340LC;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LC D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LS;DI_SDMG0340LS;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LS D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMK0340L;DI_SDMK0340L;Diodes;Si; 40.0V 30.0mA 3.00us Diodes Inc. Schottky Barrier Diode .MODEL DI_SDMK0340L D ( IS=11.2u RS=3.64 BV=40.0 IBV=500n + CJO=2.65p M=0.333 N=2.69 TT=4.32u ) ****************************************************************************************************************************** *SRC=SDMP0340LAT;DI_SDMP0340LAT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LAT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LCT;DI_SDMP0340LCT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LCT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LST;DI_SDMP0340LST;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LST D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LT;DI_SDMP0340LT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky .MODEL DI_SDMP0340LT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) *SDT12A120P5 Spice Model v1.0 Last Revised 4/8/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDT12A120P5 D ( IS=1.084u RS=19.29m BV=140.0 IBV=10.00 + CJO=2.275n M=669.4m N=1.086 TT=25.30n EG=480.0m VJ=877.8m ) *SDT15H100P5 Spice Model v1.0 Last Revised 4/8/2022 Diodes Inc SIMULATOR=SPICE3 .MODEL DI_SDT15H100P5 D ( IS=1.531u RS=8.047m BV=120.0 IBV=10.00 + CJO=2.944n M=610.9m N=1.113 TT=40.80n EG=480.0m VJ=1.158 ) *SDT5100LP5 Spice Model v1.0 Last Revised 02/21/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SDT5100LP5 D ( IS=183.4n RS=33.62m BV=110.0 IBV=10.00 + CJO=504.0p M=688.6m N=1.286 TT=20.00n EG=480.0m VJ=2.077 ) *SRC=SF10AG;DI_SF10AG;Diodes;Si; 50.0V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10AG D ( IS=1.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10BG;DI_SF10BG;Diodes;Si; 100V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10BG D ( IS=1.42n RS=42.0m BV=100 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10CG;DI_SF10CG;Diodes;Si; 150V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10CG D ( IS=1.42n RS=42.0m BV=150 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10DG;DI_SF10DG;Diodes;Si; 200V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10DG D ( IS=1.42n RS=42.0m BV=200 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10FG;DI_SF10FG;Diodes;Si; 300V 1.00A 40.0ns Diodes Inc. - .MODEL DI_SF10FG D ( IS=50.9p RS=75.5m BV=300 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=57.6n ) *SRC=SF10GG;DI_SF10GG;Diodes;Si; 400V 1.00A 40.0ns Diodes Inc. - .MODEL DI_SF10GG D ( IS=50.9p RS=75.5m BV=400 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=57.6n ) *SRC=SF10HG;DI_SF10HG;Diodes;Si; 500V 1.00A 50.0ns Diodes Inc. - .MODEL DI_SF10HG D ( IS=13.5u RS=30.9m BV=500 IBV=10.0u + CJO=92.5p M=0.333 N=5.40 TT=72.0n ) *SRC=SF10JG;DI_SF10JG;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. - .MODEL DI_SF10JG D ( IS=13.5u RS=30.9m BV=600 IBV=10.0u + CJO=92.5p M=0.333 N=5.40 TT=72.0n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=7/23/2021 *VERSION=1 .SUBCKT SMAJ30CA 1 2 * Terminals: A K D1 1 3 SMAJ30CA D2 2 3 SMAJ30CA R1 1 2 7.794E+09 .model SMAJ30CA D(IS=658f N=3.688 RS=284.9m CJO=214.3p M=0.244 VJ=0.979 FC=0.5 BV=32.01 IBV=5m) .ENDS .SIMULATOR DEFAULT * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=7/23/2021 *VERSION=1 .SUBCKT SMAJ30CA 1 2 * Terminals: A K D1 1 3 SMAJ30CA D2 2 3 SMAJ30CA R1 1 2 7.794E+09 .model SMAJ30CA D(IS=658f N=3.688 RS=284.9m CJO=214.3p M=0.244 VJ=0.979 FC=0.5 BV=32.01 IBV=5m) .ENDS .SIMULATOR DEFAULT * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10/20/2022 *VERSION=1 .SUBCKT SMAJ33AQ 1 2 * Terminals: A K D1 1 2 SMAJ33AQ R1 1 2 7.367E+09 .model SMAJ33AQ D(IS=610f N=1.214 RS=46.49m CJO=389.6p M=0.3 VJ=0.47 FC=0.5 BV=38.8 IBV=5m) .ENDS * (c) 2022 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=3/04/2019 *VERSION=1 .SUBCKET SMAJ33CA 1 2 * Terminals: A K D1 1 3 SMAJ33CA D2 2 3 SMAJ33CA R1 1 2 8.872E+09 .model SMAJ33CA D(IS=41.60p N=1.394 RS=12.42m CJO=250.3p M=0.3 VJ=0.47 FC=0.5 BV=39.02 IBV=1m) * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=3/04/2019 *VERSION=1 .SUBCKET SMAJ33CAQ 1 2 * Terminals: A K D1 1 3 SMAJ33CAQ D2 2 3 SMAJ33CAQ R1 1 2 8.872E+09 .model SMAJ33CAQ D(IS=41.60p N=1.394 RS=12.42m CJO=250.3p M=0.3 VJ=0.47 FC=0.5 BV=39.02 IBV=1m) * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=8/01/2014 *VERSION=1 .model SMAJ48A D(IS=.1u RS=0.078 CJO=1000p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=53 NBV=20 IBV=10u TT=40n EG=.84 TRS1=.1m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *DATE=18june2019 *VERSION=1 .SUBCKT SMAZ12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.2 .MODEL DF D ( IS=2.51p RS=.0780 N=1.15 + CJO=100p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=0.65 N=1 ) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=18sep2013 *VERSION=1 .SUBCKT SMAZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.2 .MODEL DF D ( IS=2.51p RS=.0780 N=1.15 + CJO=100p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.8 N=1 ) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DIODES_INC_SPICE_MODEL *ORIGIN=SASP_DPG_HE *SIMULATOR=PSPICE *DATE=3/13/2023 *VERSION=1 .SUBCKT SMAZ5V1 1 2 * Terminals A C D1 1 2 DF DZ 3 1 DR VZ 2 3 1.7 .MODEL DF D ( IS=16.0p RS=1.70m N=1.345 CJO=54.46p VJ=57.71m M=118.3m ) .MODEL DR D ( IS=164.0f RS=3.25 N=4.58 ) .ENDS * (c) 2023 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL .SIMULATOR DEFAULT * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *DIODES_INC_SPICE_MODEL *ORIGIN=SASP_DPG_HE *SIMULATOR=PSPICE *DATE=3/13/2023 *VERSION=1 .SUBCKT SMAZ5V1 1 2 * Terminals A C D1 1 2 DF DZ 3 1 DR VZ 2 3 1.7 .MODEL DF D ( IS=16.0p RS=1.70m N=1.345 CJO=54.46p VJ=57.71m M=118.3m ) .MODEL DR D ( IS=164.0f RS=3.25 N=4.58 ) .ENDS * (c) 2023 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL .SIMULATOR DEFAULT *---------- SMBJ14AQ Spice Model ---------- .SUBCKT SMBJ14AQ 1 2 * TERMINALS: Anode Cathode D1 1 2 D1 R1 1 2 2.103E+09 .MODEL D1 D + IS = 2.229E-10 N = 1.468 RS = 0.01457 + CJO = 2.091E-09 VJ = 0.4946 M = 0.3388 FC = 0.5 + BV = 15.1 IBV = 4.441E-10 .ENDS *Diodes SMBJ14AQ Spice Model v1.0 Last Revised 2019/03/22 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=3/21/2019 *VERSION=1 .SUBCKET SMBJ16AQ 1 2 * Terminals: A K D1 1 2 SMBJ16AQ R1 1 2 2.791E9 .model SMBJ16AQ D(IS=89.33p N=1.408 RS=19.11m CJO=1.689n M=0.3 VJ=0.47 FC=0.5 BV=18.96 IBV=7.101m) * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=23AUG2013 *VERSION=1 .SUBCKT SMBJ18A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 20 .MODEL DF D ( IS=10f RS=.5 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5f RS=.2 N=1.1 ) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- SMBJ18AQ Spice Model ---------- .SUBCKT SMBJ18AQ 1 2 * TERMINALS: Anode Cathode D1 1 2 D1 R1 1 2 4.174E+09 .MODEL D1 D + IS = 9.955E-10 N = 1.564 RS = 0.02143 + CJO = 1.523E-09 VJ = 0.702 M = 0.3604 FC = 0.5 + BV = 19.8 IBV = 4.441E-10 .ENDS *Diodes SMBJ18AQ Spice Model v1.0 Last Revised 2019/03/22 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=9/15/2021 *VERSION=1 .SUBCKT SMBJ18CA 1 2 * Terminals: A K D1 1 3 SMBJ18CA D2 2 3 SMBJ18CA R1 1 2 3.173E+09 .model SMBJ18CA D(IS=537p N=1.612 RS=45.93m CJO=2.847n M=0.491 VJ=0.585 FC=0.5 BV=20.89 IBV=5m) .ENDS .SIMULATOR DEFAULT * (c) 2021 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=3/21/2019 *VERSION=1 .SUBCKET SMBJ28AQ 1 2 * Terminals: A K D1 1 2 SMBJ28AQ R1 1 2 3.788E9 .model SMBJ28AQ D(IS=79.54p N=1.408 RS=23.26m CJO=972.6p M=0.3 VJ=0.47 FC=0.5 BV=33.26 IBV=10.0m) * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *---------- SMBJ30AQ Spice Model ---------- .SUBCKT SMBJ30AQ 1 2 * TERMINALS: Anode Cathode D1 1 2 D1 R1 1 2 3.111E+09 .MODEL D1 D + IS = 2.365E-09 N = 1.711 RS = 0.02362 + CJO = 9.348E-10 VJ = 0.5845 M = 0.3388 FC = 0.5 + BV = 35.1 IBV = 4.441E-10 .ENDS *Diodes SMBJ30AQ Spice Model v1.0 Last Revised 2019/03/22 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=30/01/2015 *VERSION=1 .model SMBJ33A D(IS=.1u RS=0.3 CJO=80000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=34.3 NBV=20 IBV=10u TT=4n EG=.84 TRS1=.1m) * (c) 2015 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10NOV2010 *VERSION=1 * .SUBCKT SMCJ24A 7 1 *------connections-------Anode Cathode * L1 7 2 1.5E-9 *Forward D1 2 1 Dmod1 .MODEL Dmod1 D IS=1.5E-12 N=1.18 XTI=5 RS=0.04 CJO=620E-12 VJ=0.75 M=0.42 TT=4E-7 C1 1 2 50E-12 *Leakage RL 1 2 8E6 *Reverse RZ1 2 3 2 D2 4 3 Dmod2 .MODEL Dmod2 D IS=1E-15 N=0.5 RZ2 2 5 0.33 D3 6 5 Dmod2 EV1 1 4 16 18 1 EV2 1 6 16 18 1.07 IBV 0 16 0.001 RBV 16 0 Rmod2 47750 .MODEL Rmod2 RES TC1=8.3E-4 D4 18 0 Dmod2 IT 0 18 0.001 .ENDS SMCJ24A * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=28/1/2016 *VERSION=1 .model SMBJ60CA D(IS=.1u RS=0.005 CJO=8000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=6 NBV=10 IBV=200u TT=4n EG=.84 TRS1=.1m) * (c) 2016 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=8/30/2021 *VERSION=1 .SUBCKT SMBJ70CA 1 2 * Terminals: A K D1 1 3 SMBJ70CA D2 2 3 SMBJ70CA R1 1 2 8.914E+09 .model SMBJ70CA D(IS=2.77n N=3.41 RS=8.48u CJO=429.3p M=0.347 VJ=0.595 FC=0.5 BV=78.66 IBV=5m) .ENDS .SIMULATOR DEFAULT * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * SPICE 3 Model for SMCJ22AQ 1 Channel Uni-Dir SMC ************************************************************************************* * (C) Copyright 2024 Diodes Incorporated. All rights reserved. ************************************************************************************* ** This model is designed as an aid not an accurate physical model ** DIODES make no warranties with this model ** The model is provided solely on an "as is" basis. ** The entire risk as to its quality and performance is with the customer. ************************************************************************************* * * This model is subject to change without notice. * Diodes is not responsible that this model is actual or to give notice about changes ************************************************************************************** * * Updates: * * Version 1.0 * * * .SUBCKT SMCJ22AQ 1 2 * Pin 1 = Electrode 1 * Pin 2 = Electrode 2 * Terminals A K D1 1 2 ZDiode .ENDS SMCJ22AQ * .MODEL ZDiode d +IS=1e-13 RS=0.2313 N=0.957115 EG=1.3 +XTI=4 BV=25.67 IBV=0.00024 CJO=3890e-12 +VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09 +KF=0 AF=1 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10NOV2010 *VERSION=1 * .SUBCKT SMCJ24A 7 1 *------connections-------Anode Cathode * L1 7 2 2E-9 *Forward D1 2 1 Dmod1 .MODEL Dmod1 D IS=4E-12 N=1.18 XTI=6 RS=0.012 CJO=2700E-12 VJ=0.6 M=0.45 TT=5.2E-7 C1 1 2 300E-12 *Leakage RL 1 2 5E6 *Reverse RZ1 2 3 0.14 D2 4 3 Dmod2 .MODEL Dmod2 D IS=1E-15 N=0.5 RZ2 2 5 0.055 D3 6 5 Dmod2 EV1 1 4 16 18 1 EV2 1 6 16 18 1.05 IBV 0 16 0.001 RBV 16 0 Rmod2 27700 .MODEL Rmod2 RES TC1=8.3E-4 D4 18 0 Dmod2 IT 0 18 0.001 .ENDS SMCJ24A * *$ * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10NOV2010 *VERSION=1 * .SUBCKT SMCJ24AQ 7 1 *------connections-------Anode Cathode * L1 7 2 2E-9 *Forward D1 2 1 Dmod1 .MODEL Dmod1 D IS=4E-12 N=1.18 XTI=6 RS=0.012 CJO=2700E-12 VJ=0.6 M=0.45 TT=5.2E-7 C1 1 2 300E-12 *Leakage RL 1 2 5E6 *Reverse RZ1 2 3 0.14 D2 4 3 Dmod2 .MODEL Dmod2 D IS=1E-15 N=0.5 RZ2 2 5 0.055 D3 6 5 Dmod2 EV1 1 4 16 18 1 EV2 1 6 16 18 1.05 IBV 0 16 0.001 RBV 16 0 Rmod2 27700 .MODEL Rmod2 RES TC1=8.3E-4 D4 18 0 Dmod2 IT 0 18 0.001 .ENDS SMCJ24AQ * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=3/01/2019 *VERSION=1 .SUBCKET SMCJ26A 1 2 * Terminals: A K D1 1 2 SMCJ26A R1 1 2 2.64E9 .model SMCJ26A D(IS=162.2p N=1.408 RS=10.40m CJO=2.428n M=0.3 VJ=0.47 FC=0.5 BV=29.78 IBV=4.984m) * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=3/01/2019 *VERSION=1 .SUBCKET SMCJ26AQ 1 2 * Terminals: A K D1 1 2 SMCJ26A R1 1 2 2.64E9 .model SMCJ26AQ D(IS=162.2p N=1.408 RS=10.40m CJO=2.428n M=0.3 VJ=0.47 FC=0.5 BV=29.78 IBV=4.984m) * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=5/19/2021 *VERSION=1 .SUBCKET SMCJ28CA 1 2 * Terminals: A K D1 1 2 SMCJ28CA D2 2 3 SMCJ28CA R1 1 2 4.306E9 .model SMCJ28CA D(IS=552.6p N=1.711 RS=5.202m CJO=1.119n M=0.222 VJ=0.58 FC=0.5 BV=31.98 IBV=4.984m) * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=30/01/2015 *VERSION=1 .model SMCJ33A D(IS=.1u RS=0.2 CJO=80000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=34.3 NBV=20 IBV=10u TT=4n EG=.84 TRS1=.1m) * (c) 2015 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *ZETEX SXTA42 Spice Model v2.0 Last Revised 24/2/05 * .MODEL SXTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3 +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7 +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 +RB =7 RE =0.07 RC =0.07 QUASIMOD=1 +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 +TF =1.1E-9 TR =0.9e-6 XTB=1.4 * *$ * *SRC=TT410;DI_TT410;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_TT410 D ( IS=92.73n RS=21.55m BV=1.229k IBV=1m + CJO=109.01p M=0.339 N=2.015 TT=4.32u ) *SRC=UDZ5V1B;UDZ5V1B;Diodes;Zener <=10V; 5.10V 0.200W DIODES INC Zener *SYM=HZEN .SUBCKT UDZ5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.20 .MODEL DF D ( IS=16.2p RS=25.3 N=1.10 + CJO=28.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=1.89 N=1.22 ) .ENDS *SRC=UDZ5V1BF;UDZ5V1BF;Diodes;Zener <=10V; 5.09V 0.500W DIODES Zener *SYM=HZEN .SUBCKT UDZ5V1BF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.66 .MODEL DF D ( IS=40.5p RS=1.92 N=1.10 + CJO=30.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.09f RS=64.5 N=3.00 ) .ENDS *SRC=UF1001;DI_UF1001;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1001 D ( IS=125u RS=17.5m BV=50.0 IBV=5.00u + CJO=79.6p M=0.333 N=3.75 TT=72.0n ) *SRC=UF1002;DI_UF1002;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1002 D ( IS=125u RS=17.5m BV=100 IBV=5.00u + CJO=79.6p M=0.333 N=3.75 TT=72.0n ) *SRC=UF1003;DI_UF1003;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1003 D ( IS=125u RS=17.5m BV=200 IBV=5.00u + CJO=79.6p M=0.333 N=3.75 TT=72.0n ) *SRC=UF1004;DI_UF1004;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1004 D ( IS=38.7u RS=15.4m BV=400 IBV=5.00u + CJO=79.6p M=0.333 N=4.17 TT=72.0n ) *SRC=UF1005;DI_UF1005;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1005 D ( IS=13.9u RS=56.6m BV=600 IBV=5.00u + CJO=46.4p M=0.333 N=4.11 TT=72.0n ) *SRC=UF1006;DI_UF1006;Diodes;Si; 800V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1006 D ( IS=13.9u RS=56.6m BV=800 IBV=5.00u + CJO=46.4p M=0.333 N=4.11 TT=72.0n ) *SRC=UF1007;DI_UF1007;Diodes;Si; 1.00kV 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1007 D ( IS=13.9u RS=56.6m BV=1.00k IBV=5.00u + CJO=46.4p M=0.333 N=4.11 TT=72.0n ) *SRC=UF3001;DI_UF3001;Diodes;Si; 50.0V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3001 D ( IS=70.7u RS=43.0u BV=50.0 IBV=10.0u + CJO=139p M=0.333 N=4.27 TT=72.0n ) *SRC=UF3002;DI_UF3002;Diodes;Si; 100V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3002 D ( IS=70.7u RS=43.0u BV=100 IBV=5.00u + CJO=139p M=0.333 N=4.27 TT=72.0n ) *SRC=UF3003;DI_UF3003;Diodes;Si; 200V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3003 D ( IS=70.7u RS=43.0u BV=200 IBV=5.00u + CJO=139p M=0.333 N=4.27 TT=72.0n ) *SRC=UF3004;DI_UF3004;Diodes;Si; 400V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3004 D ( IS=9.58u RS=15.4m BV=400 IBV=5.00u + CJO=139p M=0.333 N=3.45 TT=72.0n ) *SRC=UF3005;DI_UF3005;Diodes;Si; 600V 3.00A 75.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL Di_UF3005 D ( IS=4.50u RS=14.1m BV=600 IBV=10.0u + CJO=92.5p M=0.333 N=4.29 TT=108n ) *SRC=UF3006;DI_UF3006;Diodes;Si; 800V 3.00A 75.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL Di_UF3006 D ( IS=4.50u RS=14.1m BV=800 IBV=10.0u + CJO=92.5p M=0.333 N=4.29 TT=108n ) *SRC=UF3007;Di_UF3007;Diodes;Si; 1.00kV 3.00A 75.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL Di_UF3007 D ( IS=4.50u RS=14.1m BV=1.00k IBV=10.0u + CJO=92.5p M=0.333 N=4.29 TT=108n ) *SRC=UF5A400D1;DI_UF5A400D1;Diodes;Si; 400V 5.00A 28.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF5A400D1 D ( IS=129n RS=20.58m BV=510 IBV=10.00u + CJO=125.5p M=0.333 N=1.9 TT=28.0n) *SRC=US1A;DI_US1A;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1A D ( IS=667n RS=72.0m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1B;DI_US1B;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1B D ( IS=667n RS=72.0m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1D;DI_US1D;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1D D ( IS=667n RS=72.0m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1G;DI_US1G;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. .MODEL DI_US1G D ( IS=540p RS=0.116 BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=1.70 TT=72.0n ) *SRC=US1J;DI_US1J;Diodes;Si; 600V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1J D ( IS=709n RS=82.3m BV=600 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=US1K;DI_US1K;Diodes;Si; 800V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1K D ( IS=709n RS=82.3m BV=800 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=US1M;DI_US1M;Diodes;Si; 1.00kV 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1M D ( IS=709n RS=82.3m BV=1.00k IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=7/22/2019 *VERSION=1 *SRC=US1MDFQ;DI_US1MDFQ;Diodes;Si; 1.00kV 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1MDFQ D ( IS=269n RS=116.2m BV=1.2k IBV=10.00u + CJO=15.6p M=0.333 N=2.777 TT=55n ) *Diodes US1MDFQ Spice Model v1.0 Last Revised 2019/07/24 * (c) 2019 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *SRC=US1NWFQ;DI_US1NWFQ;Diodes;Si; 1.20kV 1.00A 80.0ns Diodes Inc. - .MODEL DI_US1NWFQ D ( IS=174n RS=211.9m BV=1.372k IBV=5.00u + CJO=12.67p VJ=0.867 M=0.333 N=2.837 TT=47.2n ) *ZETEX VN10LF Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT VN10LF 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS VN10LF * *$ * * *Zetex ZDT1048 Spice Model v1.0 Last Revised 12/09/08 * .SUBCKT ZDT1048 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15 + ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010 + CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299 + VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9 * .ENDS ZDT1048 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA * *Zetex ZDT1049 Spice Model v1.0 Last Revised 12/09/08 * .SUBCKT ZDT1049 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 + ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 + CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36 + VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9 * .ENDS ZDT1049 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA * *Zetex ZDT1049 Spice Model v1.0 Last Revised 12/09/08 * .SUBCKT ZDT1049 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 + ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 + CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36 + VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9 * .ENDS ZDT1049 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA .SUBCKT ZDT1053 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * .ENDS ZDT1053 * *$ * .SUBCKT ZDT6702 1 2 3 4 5 6 7 8 * pins E2, B2, E1, B1, C1, C1, C2, C2 * Q11 12 4 11 SUB603 Q12 12 11 3 SUB603 3.46 Q21 10 2 9 SUB702 Q22 10 9 1 SUB702 3.46 R1 5 12 0.001 R2 6 12 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13 + NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3 + RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9 + XTB=1.5 * .MODEL SUB702 PNP IS =.5E-13 BF =103 VAF=200 NF =1 IKF=.55 + ISE=.75E-14 NE =1.5 BR =15 VAR=30 NR =1 IKR=.45 ISC=3E-13 + NC=1.2 RB=0.3 RE=0.3 RC=0.3 CJE=140E-12 CJC=20E-12 + VJC=0.85 MJC=0.41 TF=1E-9 TR=290E-9 XTB=1.4 * .ENDS ZDT6702 * *$ * .SUBCKT ZDT6702 1 2 3 4 5 6 7 8 * pins E2, B2, E1, B1, C1, C1, C2, C2 * Q11 12 4 11 SUB603 Q12 12 11 3 SUB603 3.46 Q21 10 2 9 SUB702 Q22 10 9 1 SUB702 3.46 R1 5 12 0.001 R2 6 12 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13 + NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3 + RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9 + XTB=1.5 * .MODEL SUB702 PNP IS =.5E-13 BF =103 VAF=200 NF =1 IKF=.55 + ISE=.75E-14 NE =1.5 BR =15 VAR=30 NR =1 IKR=.45 ISC=3E-13 + NC=1.2 RB=0.3 RE=0.3 RC=0.3 CJE=140E-12 CJC=20E-12 + VJC=0.85 MJC=0.41 TF=1E-9 TR=290E-9 XTB=1.4 * .ENDS ZDT6702 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E2 8=C2 * 2=B2 7=C2 * 3=E1 6=C1 * 4=B1 5=C1 * .SUBCKT ZDT6718 1 2 3 4 5 6 7 8 Q1 11 4 3 Nmod Q2 12 2 1 Pmod RP1 11 5 0.001 RP2 11 6 0.001 RP3 12 7 0.001 RP4 12 8 0.001 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E2 8=C2 * 2=B2 7=C2 * 3=E1 6=C1 * 4=B1 5=C1 * .SUBCKT ZDT6718 1 2 3 4 5 6 7 8 Q1 11 4 3 Nmod Q2 12 2 1 Pmod RP1 11 5 0.001 RP2 11 6 0.001 RP3 12 7 0.001 RP4 12 8 0.001 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E2 8=C2 * 2=B2 7=C2 * 3=E1 6=C1 * 4=B1 5=C1 * .SUBCKT ZDT6753 1 2 3 4 5 6 7 8 Q1 11 4 3 Nmod Q2 12 2 1 Pmod RP1 11 5 0.001 RP2 11 6 0.001 RP3 12 7 0.001 RP4 12 8 0.001 * .MODEL Nmod NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 + ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 + CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 + TF =0.78E-9 TR =30E-9 .MODEL Pmod PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76 + ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 + ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 + CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 + TF =0.86E-9 TR =24E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E2 8=C2 * 2=B2 7=C2 * 3=E1 6=C1 * 4=B1 5=C1 * .SUBCKT ZDT6790 1 2 3 4 5 6 7 8 Q1 11 4 3 Nmod Q2 12 2 1 Pmod RP1 11 5 0.001 RP2 11 6 0.001 RP3 12 7 0.001 RP4 12 8 0.001 * .MODEL Nmod NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 + NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 + CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 + TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 + TRC1=0.002 .MODEL Pmod PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 + VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 + ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 + MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 + TRE1=.0025 TRB1=.0025 TRC1=.0025 .ENDS * *$ * .SUBCKT ZDT694 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=1.59E-12 NF=1.001 BF=1009 IKF=0.26 VAF=45 + ISE=.253E-12 NE=1.445 NR=1 BR=40 IKR=1 VAR=30 ISC=0.326E-12 + NC=1.075 RB=0.2 RE=0.065 RC=0.075 CJC=35.5E-12 MJC=.465 + VJC=.515 CJE=258E-12 TF=.763E-9 TR=130E-9 * .ENDS ZDT694 * .SUBCKT ZDT694 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=1.59E-12 NF=1.001 BF=1009 IKF=0.26 VAF=45 + ISE=.253E-12 NE=1.445 NR=1 BR=40 IKR=1 VAR=30 ISC=0.326E-12 + NC=1.075 RB=0.2 RE=0.065 RC=0.075 CJC=35.5E-12 MJC=.465 + VJC=.515 CJE=258E-12 TF=.763E-9 TR=130E-9 * .ENDS ZDT694 * *Zetex ZDT749 Spice Model v1.0 Last Revised 12/09/08 * .SUBCKT ZDT749 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 PNP IS=2.6E-13 BF=210 VAF=27 IKF=7 ISE=1.2E-13 NE=1.43 BR=70 + VAR=14 IKR=.6 ISC=12.04E-13 NC=1.4474 NF=.999 NR=.982 RB=.3 RE=.065 + RC=.04 CJE=410E-12 TF=.65E-9 CJC=140E-12 TR=12E-9 MJC=.35 VJC=.305 * .ENDS ZDT749 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA .SUBCKT ZDT751 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13 + NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07 + RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705 + MJC=.46 * .ENDS ZDT751 * *$ .SUBCKT ZDT795A 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14 + NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45 + RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 + TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=4.3 GAMMA=0.5E-7 * .ENDS ZDT795A .SUBCKT ZDT795A 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14 + NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45 + RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 + TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=4.3 GAMMA=0.5E-7 * .ENDS ZDT795A *ZETEX ZHCS1000 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS1000 D IS=1.6e-7 N=.59 RS=137e-3 IKF=2.5e-3 XTI=2 +EG=.58 CJO=184.9p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=4E-6 NR=1.8 * *$ * *ZETEX ZHCS2000 Spice Model v1.0 Last Revised 22/10/03 * .MODEL ZHCS2000 D IS=5e-7 N=.59 RS=88e-3 IKF=5e-3 XTI=2 +EG=.58 CJO=370p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 +ISR=10E-6 NR=1.8 * *$ * *ZETEX ZHCS350 Spice Model v1.0 Last Revised 26/04/2005 * .MODEL ZHCS350 D IS=1.35e-7 N=1.06 ISR=6e-7 NR=1.1 RS=0.9 +IKF=0.2 BV=65 TRS1=6.5e-3 XTI=2 EG=0.63 Fc=0.5 CJO=18.84e-12 +M=0.5 VJ=0.33 TT=1.6e-9 * *$ * *ZETEX ZHCS400 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS400 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2 +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=2.2E-6 NR=1.8 * *$ * *ZETEX ZHCS500 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS500 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2 +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=2.2E-6 NR=1.8 * *$ * *ZHCS506QTA Spice Model v1.0 Last Revised 11/23/2022 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_ZHCS506QTA D ( IS=2.455u RS=383.2m BV=66.00 IBV=10.00 + CJO=93.58p M=387.8m N=1.018 TT=8.727n EG=480.0m VJ=237.2m ) *ZETEX ZHCS750 Spice Model v1.0 Last Revised 23/9/97 * .MODEL ZHCS750 D IS=7E-6 N=.99 RS=130E-3 IKF=.15 XTI=2 EG=.58 + CJO=184.9p M=.523 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * *$ * *ZETEX ZHT431 Spice Model v1.0 Last Revised 22/7/2005 * *NOTE: This is a simplified Model. Do not rely on this Model for *validation of circuit stability. It does not accurately replicate *stability boundary conditions with additional load capacitance. *Check stability by normal breadboarding techniques. * .SUBCKT ZHT431 1 2 3 *Connections Vz Vref Gnd *Input current L2 2 12 2E-9 Rin 12 13 Rmod1 20E6 Cin 12 13 1E-12 D1 13 12 Dmod D2 12 11 Dmod *Reference voltage, Voltage dependence Iref 13 21 2.4985E-3 Rref 21 13 Rmod2 1000 G1 21 13 11 13 1.43E-6 *Gain, time constant and clamp voltage G2 13 31 12 21 0.004 Rt1 31 13 1E8 Ct1 31 32 800E-12 Rt2 32 13 2000 Ct2 31 33 50E-12 Rt3 33 13 5 D3 31 13 Dmod D4 13 31 Dmod *Buffer,Output G3 13 41 13 31 0.22 L1 1 11 2E-9 Rz 11 42 10 D5 42 41 Dmod D6 13 41 Dmod D7 13 11 Dmod Rx 13 23 0.5 L3 3 23 2E-9 Rq 11 13 Rmod3 74E3 * .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7) .MODEL Rmod2 RES (TC1=8.5E-6 TC2=-3.3E-7) .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5) .MODEL Dmod D IS=1E-14 RS=0.1 BV=22 CJO=0.1E-12 .ENDS ZHT431 * *$ * *ZETEX ZLLS1000 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS1000 D IS=1.35E-6 N=1.03 ISR=3.3E-6 NR=2 IKF=0.65 BV=56 IBV=5E-4 +RS=0.14 TT=4E-9 CJO=115E-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *ZETEX ZLLS2000 Spice Model v2.0 Last revision 25/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS2000 D IS=2.7e-6 N=1.03 ISR=4.5E-6 NR=2 IKF=1.3 BV=56 IBV=1E-3 +RS=0.07 TT=6e-9 CJO=265e-12 VJ=0.6 M=0.34 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *ZETEX ZLLS350 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS350 D IS=14E-8 N=1.03 ISR=9E-8 NR=2 IKF=0.043 BV=56 IBV=1E-4 +RS=1.2 TT=1e-9 CJO=13.5E-12 VJ=0.6 M=0.33 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *ZETEX ZLLS400 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS400 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *ZETEX ZLLS410 Spice Model v1.0 Last Revised 25/05/07 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.75 * .MODEL ZLLS410 D IS=1.3e-6 N=1.03 ISR=4E-7 NR=2 IKF=0.15 BV=36 IBV=200E-6 +NBV=1 RS=0.1 TT=2e-9 CJO=81e-12 VJ=0.6 M=0.39 EG=0.63 XTI=2 TRS1=4E-3 * *$ * *ZETEX ZLLS500 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS500 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ * *ZETEX ZMR500 Spice Model v1.0 Last revision 31/01/07 * .SUBCKT ZMR500 1 2 3 * Connections IN_GND_OUT Q1 12 5 6 Qmod1 R1 4 2 Rmod1 1 R2 6 7 0.04 R4 10 2 15E3 R5 6 8 1E6 R6 5 6 1E6 D1 1 11 Dmod1 D2 11 12 Dmod1 R8 7 2 Rmod3 100E3 C4 8 10 130E-12 I1 2 4 5.001 G1 5 7 8 4 1 G2 2 4 1 2 5E-4 VS 3 7 0 F1 2 4 VS 0.5 .MODEL Qmod1 NPN (RC=10 RB=10 RE=10 CJC=2p CJE=5p) .MODEL Dmod1 D (IS=0.8E-15) .MODEL Rmod1 RES (TC1=-3.9E-5 TC2=-6.1E-7) .MODEL Rmod3 RES (TC1=-5E-4 TC2=0E-7) .ENDS ZMR500 * *$ * *ZETEX ZR431 Spice Model v1.0 Last Revised 31/3/2005 * *NOTE: This is a simplified Model. Do not rely on this Model for *validation of circuit stability. It does not accurately replicate *stability boundary conditions with additional load capacitance. *Check stability by normal breadboarding techniques. * .SUBCKT ZR431 1 2 3 *Connections Vz Vref Gnd *Input current L2 2 12 2E-9 Rin 12 13 Rmod1 20E6 Cin 12 13 1E-12 D1 13 12 Dmod D2 12 11 Dmod *Reference voltage, Voltage dependence Iref 13 21 2.4985E-3 Rref 21 13 Rmod2 1000 G1 21 13 11 13 1.43E-6 *Gain, time constant and clamp voltage G2 13 31 12 21 0.004 Rt1 31 13 1E8 Ct1 31 32 800E-12 Rt2 32 13 2000 Ct2 31 33 50E-12 Rt3 33 13 5 D3 31 13 Dmod D4 13 31 Dmod *Buffer,Output G3 13 41 13 31 0.22 L1 1 11 2E-9 Rz 11 42 10 D5 42 41 Dmod D6 13 41 Dmod D7 13 11 Dmod Rx 13 23 0.5 L3 3 23 2E-9 Rq 11 13 Rmod3 74E3 * .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7) .MODEL Rmod2 RES (TC1=8.5E-6 TC2=-3.3E-7) .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5) .MODEL Dmod D IS=1E-14 RS=0.1 BV=22 CJO=0.1E-12 .ENDS ZR431 * *$ * *ZETEX ZR431L Spice Model v1.0 Last Revised 21/10/05 * *NOTE: This is a simplified model. Do not rely on this model for *validation of circuit stability. It does not accurately replicate *stability boundary conditions when the device is operated with *additional load capacitance. Check the circuit stability by normal *breadboarding techniques. * .SUBCKT ZR431L 1 2 3 *Connections Vz Vref Gnd * *Input current Rin 2 3 Rmod1 1.127E7 D1 3 2 Dmod1 D2 2 1 Dmod1 Cin 2 3 10E-12 * *Quiescent current E1 50 3 2 3 1 D8 50 51 Dmod1 Rq 51 52 Rmod4 31E3 Vq 52 3 0 F1 1 3 Vq 1 Ro 1 3 1.5E6 * *Reference voltage Iref 3 21 1.2405E-3 Rref 21 3 Rmod2 1000 * *Voltage dependence G1 21 3 POLY(1) 1 3 0 1.57E-6 -0.97e-7 * *Gain G2 3 31 2 21 1e-7 Rt2 3 31 100E6 Rt3 3 32 3E6 Ct1 31 32 3E-13 D3 31 3 Dmod1 D4 3 31 Dmod1 * *Output *Q1 5 42 3 Qmod1 Cr1 7 31 1.5e-14 G3 41 3 31 3 0.8 Rc1 6 7 5 Rc2 7 5 5 D6 3 41 Dmod1 D7 3 1 Dmod1 L1 1 6 10nH D9 5 41 Dmod2 * .MODEL Qmod1 NPN BF=220 CJC=3E-12 CJE=3E-12 .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7) .MODEL Rmod2 RES (TC1=1.5e-5 TC2=-3.5e-7) .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5) .MODEL Rmod4 RES (TC1=1.7E-3 TC2=0) .MODEL Dmod1 D IS=5E-15 RS=4 BV=22 .MODEL Dmod2 D IS=1E-18 RS=.01 .ENDS ZR431L * *$ * *ZETEX ZRC250 Spice Model v1.0 Last Revised 11/07/06 * *NOTE: This is a simplified model. Confirm *any design using a physical circuit. * .SUBCKT ZRC250 1 3 *Connections Vz Gnd * *Quiescent current R1 1 49 320E3 R2 49 3 315.2E3 C1 49 1 4.5e-12 E1 50 3 49 3 1 D8 50 51 Dmod1 Rq 51 52 Rmod2 70E3 Vq 52 3 0 F1 1 3 Vq 1 * *Reference voltage Iref 3 21 1.2405E-3 Rref 21 3 Rmod1 1000 * *Gain G2 3 31 49 21 1e-7 Rt2 3 31 100E6 Rt3 3 32 3E6 Ct1 31 32 1.5E-13 D3 31 3 Dmod1 D4 3 31 Dmod1 * *Output G3 41 3 31 3 0.3 Rc1 6 5 10 D6 3 41 Dmod1 D7 3 6 Dmod1 L1 1 6 10nH D9 5 41 Dmod2 * .MODEL Qmod1 NPN BF=220 CJC=3E-12 CJE=3E-12 .MODEL Rmod1 RES (TC1=3.8e-5 TC2=-1e-7) .MODEL Rmod2 RES (TC1=1.7E-3 TC2=0) .MODEL Dmod1 D IS=5E-15 RS=4 BV=22 .MODEL Dmod2 D IS=1E-18 RS=.01 .ENDS ZRC250 * *$ * *ZETEX ZTX1048A Spice Model v1.0 Last Revised 20/01/95 * .MODEL ZTX1048A NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15 + ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010 + CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299 + VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9 * *$ * *ZETEX ZTX1049A Spice Model v1.0 Last Revised 15/6/95 * .MODEL ZTX1049A NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 + ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 + CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36 + VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9 * *$ * *ZETEX ZTX1051A Spice Model v1.0 Last Revised 16/12/94 * .MODEL ZTX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * *ZETEX ZTX1053A Spice Model v1.0 Last Revised 19/01/95 * .MODEL ZTX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * *ZETEX ZTX1147A Spice Model v1.0 Last Revised 10/12/96 * .MODEL ZTX1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 BF=500 + VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 BR=90 VAR=3.1 + IKR=1.2 RE=15e-3 RB=145e-3 RC=13e-3 CJE=560e-12 + CJC=255e-12 VJC=0.6288 MJC=0.4048 TF=1.2e-9 TR=13e-9 * *$ * *ZETEX ZTX1149A Spice Model v1.0 Last Revised 10/1/97 * .MODEL ZTX1149A PNP IS=9.5e-13 NF=1.002 ISE=1.2e-13 NE=1.4 BF=520 + VAF=24.97 IKF=5 NR=0.997 ISC=4.5E-13 NC=1.25 BR=40 + VAR=2.51 IKR=0.7 RE=20e-3 RB=150e-3 RC=10e-3 + CJE=490e-12 CJC=150e-12 VJC=1.094 MJC=0.4739 + TF=1e-9 TR=3.5e-9 * *$ * *ZETEX ZTX415 Spice Model v1.0 Last Revised 14/01/03 * .SUBCKT ZTX415 16 15 14 *Pins______________C__B__E Q_Q1 9 8 7 QMOD_1 R_R1 5 6 100 R_R2 5 4 100 R_R3 12 3 100 R_R4 3 1 500 R_R5 10 2 2k R_R6 10 11 2 D_D1 10 5 DZ20 D_D2 4 2 DZ500 D_D3 10 3 DZ200 D_D4 1 2 DZ500 D_D5 7 9 DZ300 C_C1 10 2 20p S_S1 13 11 2 10 SMOD1 S_S2 9 13 2 10 SMOD2 S_S3 8 10 2 10 SMOD3 V_H1 7 10 0 H1 6 10 V_H1 50 E1 12 10 11 10 10 L_L1 9 16 1nH L_L2 15 8 2nH L_L3 10 14 2nH .Model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4 +VAF=1900 ISE=1E-12 NE =1.6 +NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9 +RB =0.4 RE =0.1 RC =0.1 +CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12 +TF =1.3E-9 TR =2.3e-7 .Model DZ20 D Is=1E-15 Bv=20 Ibv=100u .Model DZ200 D Is=1E-15 Bv=200 Ibv=100u .Model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u .Model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u .Model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6 .Model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9 .Model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25 .ENDS ZTX415 * *$ * *ZETEX ZTX449 Spice Model v1.0 Last Revised 11/11/04 * .MODEL ZTX449 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * *ZETEX ZTX450 Spice Model v1.0 Last Revised 1/4/90 * .MODEL ZTX450 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8 +ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13 +NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12 +TR =85E-9 VJC=.505 MJC=.39 * *$ * *ZETEX ZTX450 Spice Model v1.0 Last Revised 1/4/90 * .MODEL ZTX450 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8 +ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13 +NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12 +TR =85E-9 VJC=.505 MJC=.39 * *$ * .MODEL ZTX453 NPN IS=3.8E-14 NF=1.008 BF=150 IKF=2 VAF=300 XTB=1.4 + ISE=1E-14 NE=1.22 NR=1.015 BR=6 IKR=1.8 VAR=48 ISC=5E-13 NC=1.2 + RB=1 RE=0.155 RC=0.061 CJC=18E-12 MJC=0.31 VJC=0.45 CJE=65E-12 + MJE=0.34 VJE=0.7 TF=8E-10 TR=6E-7 QUASIMOD=1 RCO=17 GAMMA=1E-7 VO=20 * *$ * .MODEL ZTX455 NPN IS =5.6E-14 BF =260 VAF=660 NF =.992 IKF=.155 ISE=3.1E-14 +NE =1.2502 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 RB =1.1 +RE =.161 RC =.0339 CJC=11.6E-12 TF =.75E-9 CJE=53.5E-12 TR =100E-9 VJC=.505 +MJC=.455 * * * .MODEL ZTX455 NPN IS =5.6E-14 BF =260 VAF=660 NF =.992 IKF=.155 ISE=3.1E-14 +NE =1.2502 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 RB =1.1 +RE =.161 RC =.0339 CJC=11.6E-12 TF =.75E-9 CJE=53.5E-12 TR =100E-9 VJC=.505 +MJC=.455 * * *ZETEX ZTX457 Spice Model v2.0 Last Revised 24/2/05 * .MODEL ZTX457 NPN IS =5E-14 NF =1 +BF =250 IKF=500E-3 VAF=1020 ISE=2.5E-14 NE =1.38 +RCO=60 GAMMA=10E-7 NR =1 BR =5 IKR=0 VAR=55 ISC=5e-12 +NC =1.31 RB =3 RE =0.05 RC =0.05 QUASIMOD=1 +CJC=10.95E-12 MJC=0.265 VJC=0.3905 CJE=125.2E-12 +TF =0.6E-9 TR =0.66e-6 XTB=1.4 * *$ * *ZETEX ZTX458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL ZTX458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * *ZETEX ZTX549 Spice Model v1.0 Last Revised 11/10/94 * .MODEL ZTX549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 + ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 + ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 + CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 + MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX ZTX550 Spice Model v1.0 Last Revised 24/7/01 * .MODEL ZTX550 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX ZTX550 Spice Model v1.0 Last Revised 24/7/01 * .MODEL ZTX550 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX ZTX551 Spice Model v1.0 Last Revised 6/1/03 * .MODEL ZTX551 PNP IS =3.2E-14 BF =120 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =35 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX ZTX553 Spice Model v1.0 Last Revised 16/12/05 * .MODEL ZTX553 PNP IS =2E-13 NF =1 BF =200 IKF=0.8 +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 +NR =1 BR =15 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1 +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 +TF =0.8E-9 TR =70e-9 XTB=1.4 * *$ * *ZETEX ZTX558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL ZTX558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ * *ZETEX ZTX558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL ZTX558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ * *ZETEX ZTX560 Spice Model v2.0 Last Revised 24/2/05 * .MODEL ZTX560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54 +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3 +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12 +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1 * *$ * *ZETEX ZTX601 Spice Model v1.0 Last Revised 23/12/04 * .SUBCKT ZTX601 1 2 3 * C B E Q1 1 2 4 SUB601 Q2 1 4 3 SUB601 2.74 * .MODEL SUB601 NPN IS=8.354E-14 BF=70 VAF=18.3 IKF=0.25 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 +MJC=0.3607 TF=1E-9 TR=1800E-9 .ENDS ZTX601 * *$ * *ZETEX ZTX601B Spice Model v1.0 Last Revised 9/5/94 * .SUBCKT ZTX601B 1 2 3 * C B E Q1 1 2 4 SUB601B Q2 1 4 3 SUB601B 2.74 * .MODEL SUB601B NPN IS=8.354E-14 BF=130 VAF=18.3 IKF=0.2 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 MJC=0.3607 +TF=1E-9 TR=1800E-9 .ENDS ZTX601B * *$ * *ZETEX ZTX603 Spice Model v1.0 Last Revised 1/7/03 * .SUBCKT ZTX603 1 2 3 * C B E Q1 1 2 4 SUB603 Q2 1 4 3 SUB603 3.46 * .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13 +NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3 +RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9 +XTB=1.5 .ENDS * *$ * *ZETEX ZTX605 Spice Model v1.0 Last Revised 24/6/93 * .SUBCKT ZTX605 1 2 3 * C B E Q1 1 2 4 SUB605 Q2 1 4 3 SUB605 3.46 * .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS ZTX605 * *$ * *ZETEX ZTX614 Spice Model v1.0 Last Revised 17/12/92 * .SUBCKT ZTX614 1 2 3 * C B E Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 .ENDS ZTX614 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 * *$ * *ZETEX ZTX614 Spice Model v1.0 Last Revised 17/12/92 * .SUBCKT ZTX614 1 2 3 * C B E Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 .ENDS ZTX614 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 * *$ * *ZETEX ZTX618 Spice Model v1.0 Last Revised 8/7/93 * .MODEL ZTX618 NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 + ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF =0.95E-9 TR =2.25E-9 * *$ * *ZETEX ZTX649 Spice Model v1.0 Last Revised 17/7/90 * .MODEL ZTX649 NPN IS =3E-13 BF =225 VAF=80 IKF=2.8 ISE=1.1E-13 NE =1.37 +BR =110 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.3 RE =.063 +RC =.07 CJE=325E-12 TF =1E-9 CJC=70E-12 TR =10E-9 * *$ * *ZETEX ZTX651 Spice Model v1.0 Last Revised 16/1/91 * .MODEL ZTX651 NPN IS =2.218E-13 NF =.9956 BF =230 IKF=2 VAF=100 ISE=2.9E-14 +NE =1.35 NR =.995 BR =56 IKR=1 VAR=30 ISC=2.971E-13 NC =1.321 RB =.04 +RE =.075 RC =.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF =.77E-9 +TR =27E-9 * *$ * *ZETEX ZTX651 Spice Model v1.0 Last Revised 16/1/91 * .MODEL ZTX651 NPN IS =2.218E-13 NF =.9956 BF =230 IKF=2 VAF=100 ISE=2.9E-14 +NE =1.35 NR =.995 BR =56 IKR=1 VAR=30 ISC=2.971E-13 NC =1.321 RB =.04 +RE =.075 RC =.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF =.77E-9 +TR =27E-9 * *$ * *ZETEX ZTX653 Spice Model v1.0 Last Revised 18/5/93 * .MODEL ZTX653 NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 + ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 + CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 + TF =0.78E-9 TR =30E-9 * *$ * *ZETEX ZTX653 Spice Model v1.0 Last Revised 18/5/93 * .MODEL ZTX653 NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 + ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 + CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 + TF =0.78E-9 TR =30E-9 * *$ * *ZETEX ZTX657 Spice Model v1.0 Last Revised 27/7/05 * .MODEL ZTX657 NPN IS=2.3E-13 NF=1.003 BF=150 IKF=1.35 +VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE =1.33 NR=1.001 +BR=8 VAR=43 ISC=1.8E-13 NC=1.19 RC=0.085 RB =0.35 RE =0.2 +CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7 +XTB=1.4 QUASIMOD=1 * *$ * *ZETEX ZTX658 Spice Model v2.0 Last Revised 21/1/05 * .MODEL ZTX658 NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154 +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48 +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36 +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55 +QUASIMOD=1 RCO=38 GAMMA=20E-8 * *$ * *ZETEX ZTX658 Spice Model v2.0 Last Revised 21/1/05 * .MODEL ZTX658 NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154 +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48 +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36 +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55 +QUASIMOD=1 RCO=38 GAMMA=20E-8 * *$ * *ZETEX ZTX688B Spice Model v1.0 Last Revised 8/11/90 * .MODEL ZTX688B NPN IS =1.09E-12 NF =0.9935 BF =1180 IKF=5.2 VAF=25 +ISE=1.3E-13 NE =1.35 NR =0.992 BR =790 IKR=.5 VAR=5 ISC=0.174E-12 +NC =1.399 RB =.3 RE =.036 RC =.034 CJC=104E-12 MJC=.29 VJC=.46 +CJE=280E-12 TF =.93E-9 TR =1.05E-9 * *$ * *ZETEX ZTX689B Spice Model v1.0 Last Revised 12/10/04 * .MODEL ZTX689B NPN IS =1.8E-12 NF =0.994 BF =1500 IKF=3.2 VAF=24 +ISE=.218E-12 NE =1.345 NR =0.996 BR =310 IKR=.8 VAR=4 ISC=0.36E-12 +NC =1.26 RB =.2 RE =.035 RC =.036 CJC=74E-12 MJC=.35 VJC=.485 +CJE=248E-12 TF =0.72E-9 TR =4.9E-9 XTB=1.13 TRE1=4E-3 ITF=5e-3 * *$ * *ZETEX ZTX690B Spice Model v2.0 Last revision 12/07/07 * .MODEL ZTX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX ZTX690B Spice Model v2.0 Last revision 12/07/07 * .MODEL ZTX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX ZTX692B Spice Model v1.0 Last Revised 31/10/90 * .MODEL ZTX692B NPN IS =1.87E-12 NF =.9983 BF =1400 IKF=0.73 VAF=29 +ISE=.21E-12 NE =1.378 NR =.997 BR =68 IKR=.55 VAR=12 ISC=.44E-12 +NC =1.14 RB =.2 RE =.05 RC =.048 CJC=42.5E-12 MJC=.475 VJC=.625 +CJE=233E-12 TF =.77E-9 TR =39E-9 *Note: This Model may be inaccurate for collector currents above 1.5A. * *$ * *ZETEX ZTX694B Spice Model v1.0 Last Revised 1/11/90 * .MODEL ZTX694B NPN IS =1.59E-12 NF =1.001 BF =1009 IKF=0.26 VAF=45 +ISE=.253E-12 NE =1.445 NR =1 BR =40 IKR=1 VAR=30 ISC=0.326E-12 +NC =1.075 RB =0.2 RE =0.065 RC =0.075 CJC=35.5E-12 MJC=.465 +VJC=.515 CJE=258E-12 TF =.763E-9 TR =130E-9 *Note: This Model may be inaccurate for collector currents above 0.6A. * *$ * *ZETEX ZTX696B Spice Model v2.0 Last Revised 25/1/05 * .MODEL ZTX696B NPN IS =.98476E-12 NF =.999 BF =705 IKF=0.8 VAF=235 +ISE=8.1E-14 NE =1.36 NR =1.002 BR =20 IKR=.8 VAR=26 ISC=.66E-12 +NC =1.15 RB =.07 RE =.125 RC =.098 CJC=25.4E-12 MJC=.47 VJC=.445 +CJE=270E-12 TF =1.301E-9 TR =690E-9 XTB=1.4 +QUASIMOD=1 RCO=24 GAMMA=75E-8 * *$ * *ZETEX ZTX705 Spice Model v1.0 Last Revised 9/8/90 * .SUBCKT ZTX705 1 2 3 * C B E Q1 1 2 4 SUB704 Q2 1 4 3 SUB704 4 * .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817 +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595 .ENDS ZTX705 * *$ * *ZETEX ZTX718 Spice Model v1.0 Last Revised 15/12/93 * .MODEL ZTX718 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * *ZETEX ZTX749 Spice Model v1.0 Last Revised 17/7/90 * .MODEL ZTX749 PNP IS =2.6E-13 BF =210 VAF=27 IKF=7 ISE=1.2E-13 NE =1.43 BR =70 +VAR=14 IKR=.6 ISC=12.04E-13 NC =1.4474 NF =.999 NR =.982 RB =.3 RE =.065 +RC =.04 CJE=410E-12 TF =.65E-9 CJC=140E-12 TR =12E-9 MJC=.35 VJC=.305 * *$ * *ZETEX ZTX751 Spice Model v1.0 Last Revised 23/1/91 * .MODEL ZTX751 PNP IS =2.715E-13 BF =170 VAF=70 NF =1.004 IKF=2.75 ISE=1E-13 +NE =1.535 BR =23 VAR=40 NR =1.005 IKR=.55 ISC=5.15E-14 NC =1.13 RB =.07 +RE =.065 RC =.085 CJE=360E-12 TF =.94E-9 CJC=90E-12 TR =60E-9 VJC=.705 +MJC=.46 * *$ * *ZETEX ZTX751 Spice Model v1.0 Last Revised 23/1/91 * .MODEL ZTX751 PNP IS =2.715E-13 BF =170 VAF=70 NF =1.004 IKF=2.75 ISE=1E-13 +NE =1.535 BR =23 VAR=40 NR =1.005 IKR=.55 ISC=5.15E-14 NC =1.13 RB =.07 +RE =.065 RC =.085 CJE=360E-12 TF =.94E-9 CJC=90E-12 TR =60E-9 VJC=.705 +MJC=.46 * *$ * *ZETEX ZTX753 Spice Model v1.0 Last Revised 24/5/93 * .MODEL ZTX753 PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76 + ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 + ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 + CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 + TF =0.86E-9 TR =24E-9 * *$ * *ZETEX ZTX753 Spice Model v1.0 Last Revised 24/5/93 * .MODEL ZTX753 PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76 + ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 + ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 + CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 + TF =0.86E-9 TR =24E-9 * *$ * *ZETEX ZTX757 Spice Model v3.0 Last Revised 24/2/05 * .MODEL ZTX757 PNP IS =1.305E-13 NF =1.0004 BF =120 IKF=.5 VAF=1060 +ISE=7.5E-13 NE =1.5 RCO=15 GAMMA=5E-8 NR =1 ISC=2E-13 NC =1.8 +VAR=50 BR =3.2 IKR=.5 RB =.1 RE =.19 RC =.2 CJC=48E-12 MJC=.56 +VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6 +TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1 * *$ * *ZETEX ZTX758 Spice Model v2.0 Last Revised 14/6/04 * .MODEL ZTX758 PNP IS =1.305E-13 NF =1.0004 BF =150 VAF=350 +ISE=7.5E-13 NE =1.5 RCO=20 GAMMA=2.5E-8 QUASIMOD=1 NR =1 +ISC=2E-13 NC =1.8 VAR=30 BR =2.5 RB =.1 RE =.01 RC =.01 +CJC=58E-12 MJC=.56 VJC=.775 CJE=404E-12 TF =1E-9 TR =1200E-9 +XTB=1.7 * *$ * *ZETEX ZTX788A Spice Model v1.0 Last Revised 3/6/92 * .MODEL ZTX788A PNP IS=1.2016E-12 NF=1.0186 BF=490 IKF=3.8 VAF=10.8 +ISE=2.2E-13 NE=1.57 NR=1.011 BR=190 IKR=0.35 VAR=13.6 +ISC=2.38E-12 NC=1.693 RB=0.050 RE=0.028 RC=0.042 CJC=156E-12 +MJC=0.4266 VJC=0.9718 CJE=335E-12 TF=0.78E-9 TR=4.6E-9 * *$ * *ZETEX ZTX788B Spice Model v1.0 Last Revised 2/1/92 * .MODEL ZTX788B PNP IS=1.252E-12 NF=1.0119 BF=770 IKF=2.6 VAF=11 +ISE=1.3185E-13 NE=1.4832 NR=1.0047 BR=350 IKR=0.32 VAR=10.5 +ISC=5.2648E-14 NC=1.186 RB=0.053 RE=0.031 RC=0.044 CJC=137E-12 +MJC=0.34 VJC=0.275 CJE=280E-12 TF=0.75E-9 TR=2.3E-9 * *$ * *ZETEX ZTX789A Spice Model v1.0 Last Revised 3/1/92 * .MODEL ZTX789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5 +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14 +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26 +CJE=300E-12 TF=0.73E-9 TR=4.2E-9 * *$ * *ZETEX ZTX790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL ZTX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX ZTX790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL ZTX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX ZTX792A Spice Model v1.0 Last Revised 7/1/92 * .MODEL ZTX792A PNP IS=5.98255E-13 NF=1.0022 BF=525 IKF=1.25 VAF=30 +ISE=1.45E-13 NE=1.54 NR=0.995 BR=75 IKR=0.4 VAR=34 ISC=1.58913E-13 +NC=1.03943 RB=0.06 RE=0.059 RC=0.08 CJC=90E-12 MJC=0.5 VJC=0.71 +CJE=286E-12 TF=0.75E-9 TR=93.75E-9 *Note, The Model may be inaccurate for collector currents above 1.2A. * *$ * *ZETEX ZTX795A Spice Model v1.0 Last revision 16/09/05 * .MODEL ZTX795A PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14 +NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45 +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 +TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +RCO=4.3 GAMMA=0.5E-7 * *$ * *ZETEX ZTX796A Spice Model v2.0 Last Revised 4/3/05 * .MODEL ZTX796A PNP IS=7E-13 NF=1.005 BF=450 IKF=2 VAF=450 ISE=1E-14 +NE=1.4 NR=1 BR=6.5 VAR=48 ISC=4.1E-13 IKR=0.4 NC=1.07 RB=0.05 +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 TF=0.83E-9 +TR=130E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=13 GAMMA=2E-7 * *$ * *ZETEX ZTX849 Spice Model v1.0 Last Revised 20/1/93 * .MODEL ZTX849 NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90 + ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 + VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 + RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 + CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9 * *$ * *ZETEX ZTX851 Spice Model v1.0 Last Revised 21/1/93 * .MODEL ZTX851 NPN IS =1.0085E-12 NF =1.0001 BF =240 IKF=5.1 VAF=158 + ISE=2E-13 NE =1.38 NR =0.9988 BR =110 IKR=5.5 VAR=46 + ISC=4.6515E-13 NC =1.334 RB =0.025 RE =0.018 RC =0.015 + CJC=155E-12 MJC=0.4348 VJC=0.6477 CJE=1.05E-9 + TF =0.79E-9 TR =24E-9 * *$ * *ZETEX ZTX853 Spice Model v1.0 Last Revised 30/7/98 * .MODEL ZTX853 NPN IS =8E-13 NF =0.99 BF =240 IKF=1.4 VAF=200 +ISE=4E-13 NE =1.27 NR =0.99 BR =90 IKR=1.4 VAR=46 ISC=100E-12 +NC =1.65 CJC=127E-12 MJC=0.46 VJC=.65 CJE=1.07E-9 RB=.3 RC=.014 +RE=.014 TF =0.9E-9 TR =20e-9 * *$ * *ZETEX ZTX853 Spice Model v1.0 Last Revised 30/7/98 * .MODEL ZTX853 NPN IS =8E-13 NF =0.99 BF =240 IKF=1.4 VAF=200 +ISE=4E-13 NE =1.27 NR =0.99 BR =90 IKR=1.4 VAR=46 ISC=100E-12 +NC =1.65 CJC=127E-12 MJC=0.46 VJC=.65 CJE=1.07E-9 RB=.3 RC=.014 +RE=.014 TF =0.9E-9 TR =20e-9 * *$ * *ZETEX ZTX855 Spice Model v2.0 Last Revised 24/2/05 * .MODEL ZTX855 NPN IS =7.5E-13 BF =240 NF=0.995 VAF=350 ISE=4E-13 +NE=1.42 GAMMA=8E-8 RCO=2 XTB=1.4 BR=27 NR=1.0015 VAR=140 ISC=8E-12 +NC=1.3 RB=0.15 RE=0.018 RC=0.018 CJE=4.2E-10 CJC=6.6E-11 VJC=0.48 +MJC=0.41 TF =1.5E-9 TR=18E-8 QUASIMOD=1 * *$ * *ZETEX ZTX857 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL ZTX857 NPN IS=2E-12 NF=1.006 BF=226 IKF=5 VAF=595 ISE=3.6E-13 +NE=1.4088 NR=1.01 BR=40 IKR=94m VAR=33.5 ISC=1.502E-12 NC=1.067 +RB=.02 RE=.055 RC=.02 CJC=63E-12 MJC=.505 VJC=.491 CJE=1.1E-9 +TF=1.3E-9 TR=1.75E-6 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +VO=10 RCO=2.5 GAMMA=6E-8 * *$ * *ZETEX ZTX857 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL ZTX857 NPN IS=2E-12 NF=1.006 BF=226 IKF=5 VAF=595 ISE=3.6E-13 +NE=1.4088 NR=1.01 BR=40 IKR=94m VAR=33.5 ISC=1.502E-12 NC=1.067 +RB=.02 RE=.055 RC=.02 CJC=63E-12 MJC=.505 VJC=.491 CJE=1.1E-9 +TF=1.3E-9 TR=1.75E-6 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +VO=10 RCO=2.5 GAMMA=6E-8 * *$ * *ZETEX ZTX869 Spice Model v1.0 Last Revised 25/04/01 * .MODEL ZTX869 NPN IS =1.9E-12 BF =600 IKF=9 VAF=40 +ISE=3.752E-13 NE =1.399 NR =1 BR =370 IKR=6 +VAR=18 ISC=4.135E-13 NC =1.384 RB =1 RBM =0.01 +IRB =1 RE = 0.01 RC =0.02 CJC=215E-12 MJC=0.3917 +VJC=0.5871 CJE=910.3E-12 MJE=0.3826 VJE=0.7686 +TF =1.15E-9 TR =4.01E-9 * *$ * *ZETEX ZTX948 Spice Model v1.0 Last Revised 26/5/92 * .MODEL ZTX948 PNP IS=1.5554E-12 NF=1.013 BF=208 IKF=14.7 VAF=22.4 +ISE=1.48E-13 NE=1.485 NR=1.004 BR=140 IKR=1.34 VAR=15.4 +ISC=1.3946E-11 NC=1.702 RB=0.020 RE=0.0177 RC=0.015 CJC=440E-12 +MJC=0.3604 VJC=0.685 CJE=1.23E-9 TF=1.38E-9 TR=4.8E-9 * *$ * *ZETEX ZTX949 Spice Model v1.0 Last Revised 27/5/92 * .MODEL ZTX949 PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7 +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12 +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9 * *$ * *ZETEX ZTX951 Spice Model v1.0 Last Revised 27/5/92 * .MODEL ZTX951 PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3 +ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12 +NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 +VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9 * *$ * *ZETEX ZTX953 Spice Model v1.1 Last Revised 24/4/03 * .MODEL ZTX953 PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55 +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12 +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286 +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *ZETEX ZTX955 Spice Model v3.0 Last Revised 24/2/05 * .MODEL ZTX955 PNP IS =6E-13 BF =150 NF=1 VAF=40 ISE=4E-13 +NE=1.42 GAMMA=1E-8 RCO=1 XTB=1.4 BR=21 NR=1.0015 VAR=19 ISC=8E-12 +NC=1.3 RB=0.15 RE=0.023 RC=0.018 CJE=1190E-12 VJE=0.92 MJE=0.44 +CJC=216E-12 VJC=0.87 MJC=0.54 TF =9E-10 TR=11E-8 QUASIMOD=1 * *$ * *ZETEX ZTX956 Spice Model v3.0 Last Revised 24/2/05 * .MODEL ZTX956 PNP IS =3E-12 BF =215 NF=1 VAF=86 IKF=2 ISE=6.5E-13 +NE=1.58 GAMMA=1E-8 RCO=1.4 XTB=1.4 BR=18 NR=1 VAR=59 ISC=6E-12 +NC=1.6 RB=0.05 RE=0.02 RC=0.01 CJC=191E-12 MJC=0.5535 VJC=0.8577 +CJE=1.08E-9 TF=0.895E-9 TR=118E-9 QUASIMOD=1 * *$ * *ZETEX ZTX957 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL ZTX957 PNP IS=1.3152E-12 NF=1.0106 BF=215 IKF=4 VAF=325 +ISE=5.5E-13 NE=1.524 NR=1.0104 BR=8 IKR=0.63 VAR=110 ISC=6E-12 +NC=1.8 RB=0.25 RE=0.07 RC=0.07 CJC=140E-12 MJC=0.5432 VJC=0.7592 +CJE=1.1E-9 TF=1.23E-9 TR=560E-9 XTB=1.4 TRB1=.005 TRE1=.005 +QUASIMOD=1 VO=10 RCO=6.5 GAMMA=0.8E-7 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23JUL2010 *VERSION=2 * .MODEL ZTX958 PNP IS=1.601E-12 NF=1.01 BF=175 IKF=2.8 VAF=530 ISE=1.7E-13 + NE=1.46 NR=1.05 BR=5 IKR=0.8 VAR=28 ISC=5E-11 NC=1.7 RB=0.25 RE=0.038 + RC=0.035 CJC=113E-12 MJC=0.507 VJC=0.595 CJE=1.05E-9 TF=1.26E-9 TR=1.28E-6 + XTB=1.4 TRB1=0.005 TRE1=0.005 QUASIMOD=1 VO=10 RCO=7 GAMMA=0.5E-7 * *$ *ZETEX ZTX968 Spice Model v1.0 Last Revised 25/5/92 * .MODEL ZTX968 PNP IS=3.58E-12 NF=1.015 BF=500 IKF=11 VAF=11.4 +ISE=1.576E-13 NE=1.42 NR=1.01 BR=245 IKR=1.4 VAR=8.4 ISC=1.48E-11 +NC=1.637 RB=0.024 RE=0.0164 RC=0.0235 CJC=438E-12 MJC=0.361 +VJC=0.673 CJE=1.05E-9 TF=1.38E-9 TR=2.3E-9 * *$ * *ZETEX ZUMT617 Spice Model v1.0 Last Revised 24/1/03 * .MODEL ZUMT617 NPN IS =2.66E-13 BF =550 IKF=2.25 VAF=34.6 +ISE=5.7E-14 NE =1.425 BR =280 IKR=0.9 VAR=12.25 +ISC=2.76E-13 NC =1.46 RB =0.22 RE =0.055 RC =0.038 +CJC=34.2E-12 MJC=0.298 VJC=0.441 CJE=103.5E-12 +MJE=0.357 VJE=0.7042 TF =1.12E-9 TR =2.15E-9 * *$ * *ZETEX ZUMT618 Spice Model v1.0 Last Revised 24/1/03 * .MODEL ZUMT618 NPN IS =2.52E-13 BF =550 IKF=2.1 VAF=51 +ISE=7.8E-14 NE =1.4 BR =200 IKR=1.35 VAR=25 ISC=3.29E-13 +NC =1.47 RB =0.071 RE =0.06 RC =0.055 CJC=26.6E-12 MJC=0.265 +VJC=0.305 CJE=97.2E-12 TF =0.95E-9 TR =2.25E-9 * *$ * *ZETEX ZUMT619 Spice Model v1.0 Last Revised 24/1/03 * .MODEL ZUMT619 NPN IS =2.61E-13 BF =550 IKF=0.99 VAF=84 +ISE=7.17E-14 NE =1.4148 BR =110 IKR=0.63 VAR=51 ISC=2.25E-12 +NC =1.45 RB =0.093 RE =0.073 RC =0.083 CJC=18E-12 MJC=0.371 +VJC=0.435 CJE=97.7E-12 TF =0.78E-9 TR =9E-9 * *$ * *ZETEX ZUMT717 Spice Model v1.0 Last Revised 14/12/00 * .MODEL ZUMT717 PNP IS =1.57E-13 BF =500 IKF =0.86 +VAF =14.93 ISE=0.5E-13 NE =1.5 NR =1.00 BR =280 +IKR=0.086 VAR=5.64 ISC=1.72E-13 NC =1.34 RB =1.05 +RE =0.105 RC =0.088 CJC=48.7E-12 MJC=0.3456 +VJC=0.4576 CJE=93.2E-12 MJE=0.4803 VJE=0.9091 +TF =1.2E-9 TR =2E-9 * *$ * *ZETEX ZUMT718 Spice Model v1.0 Last Revised 24/1/03 * .MODEL ZUMT718 PNP IS =3.1E-13 BF =550 IKF =0.45 VAF =23 +ISE=3.6E-14 NE =1.557 BR =70 IKR=0.18 VAR=7 ISC=3.4E-14 NC =1.19 +RB =.188 RE =0.089 RC =0.1 CJC=31.5E-12 MJC=0.469 VJC=0.771 +CJE=91.6E-12 MJE=0.503 VJE=0.94 TF =0.71E-9 TR =23.7E-9 * *$ * *ZETEX ZUMT720 Spice Model v1.0 Last Revised 14/1/03 * .MODEL ZUMT720 PNP IS=2.817E-13 BF=550 IKF=0.63 VAF=28.4 +ISE=4.76E-14 NE=1.492 BR=42 IKR=0.293 VAR=10.21 ISC=2.7E-14 +NC =1.124 RB=0.173 RE=0.171 RC=0.089 CJC=28.5E-12 MJC=0.506 +VJC=0.843 CJE=92E-12 MJE=0.524 VJE=1.021 TF=0.8E-9 TR=20E-9 * *$ * *ZETEX ZVN0124A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN0124A 3 4 5 * D G S M1 3 2 5 5 MN0124 RG 4 2 225 RL 3 5 2.4E7 C1 2 5 60E-12 C2 3 2 2E-12 D1 5 3 DN0124 * .MODEL MN0124 NMOS VTO=1.5512 RS=1.436 RD=9.254 IS=1E-15 KP=1.077 +CBD=36E-12 PB=1 LAMBDA=0 .MODEL DN0124 D IS=3.071E-12 N=1.026 RS=0.511 .ENDS ZVN0124A * *$ * *ZETEX ZVN0540A Spice Model v1.0 Last Revised 4/8/04 * * .SUBCKT ZVN0540A 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN0545A Spice Model v1.0 Last Revised 20/5/04 * * .SUBCKT ZVN0545A 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN0545G Spice Model v1.0 Last Revised 20/5/04 * * .SUBCKT ZVN0545G 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN2106A Spice Model v1.2 Last Revised 6/4/01 * .SUBCKT ZVN2106A 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N2106AM M2 6 2 8 8 N2106AMS RG 4 2 15 RD 3 6 0.25 RS 8 5 0.94 RL 3 5 100E6 C1 2 8 37E-12 C2 2 3 20E-12 C3 15 14 85E-12 C4 16 8 87E-12 D1 5 3 N2106AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 +CBD=50E-12 PB=1 .MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1 .MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=3.5 VOFF=2.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-5 VOFF=-6 .ENDS ZVN2106A * *$ * *ZETEX ZVN2106G Spice Model v1.2 Last Revised 6/4/01 * .SUBCKT ZVN2106G 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N2106AM M2 6 2 8 8 N2106AMS RG 4 2 15 RD 3 6 0.25 RS 8 5 0.94 RL 3 5 100E6 C1 2 8 37E-12 C2 2 3 20E-12 C3 15 14 85E-12 C4 16 8 87E-12 D1 5 3 N2106AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 +CBD=50E-12 PB=1 .MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1 .MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=3.5 VOFF=2.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-5 VOFF=-6 .ENDS ZVN2106G * *$ * *ZETEX ZVN2110A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN2110A 3 4 5 * D G S M1 3 2 5 5 MN2110a M2 3 2 5 5 MN2110b RG 4 2 200 RL 3 5 1E9 C1 2 5 50E-12 C2 3 2 5E-12 D1 5 3 DN2110a * .MODEL MN2110a NMOS VTO=2 RS=.1 RD=1.8 IS=1E-15 KP=0.3 +CBD=60E-12 PB=1 LAMBDA=2.6E-3 .MODEL MN2110b NMOS VTO=0.9 RS=2 KP=0.1 PB=1 LAMBDA=2.6E-3 .MODEL DN2110a D IS=1E-12 RS=0.37 .ENDS ZVN2110A * *$ * *ZETEX ZVN2110G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN2110G 3 4 5 * D G S M1 3 2 5 5 MN2110a M2 3 2 5 5 MN2110b RG 4 2 200 RL 3 5 1E9 C1 2 5 50E-12 C2 3 2 5E-12 D1 5 3 DN2110a * .MODEL MN2110a NMOS VTO=2 RS=.1 RD=1.8 IS=1E-15 KP=0.3 +CBD=60E-12 PB=1 LAMBDA=2.6E-3 .MODEL MN2110b NMOS VTO=0.9 RS=2 KP=0.1 PB=1 LAMBDA=2.6E-3 .MODEL DN2110a D IS=1E-12 RS=0.37 .ENDS ZVN2110G * *$ * *ZETEX ZVN2120G Spice Model v2.1 Last Revised 12/10/06 * .SUBCKT ZVN2120G 3 4 5 * D G S M1 30 2 50 50 Mmod1 M2 30 2 50 50 Mmod2 RG 4 2 35 RIN 2 5 2E10 RL 3 5 2E8 RD 31 30 Rmod1 7 RS 50 51 1.0 C1 2 50 60E-12 C2 3 2 6E-12 C3 12 50 50E-12 C4 15 14 100E-12 D1 5 3 Dmod1 VX 51 5 0 H1 60 5 VX 10 S3 3 31 60 5 Smod3 S1A 2 12 13 50 Smod1a S1B 13 12 13 50 Smod1b S2A 2 15 14 13 Smod2a S2B 13 15 14 13 Smod2b Egs1 13 50 2 50 1 Eds1 14 50 30 50 1 * .MODEL Mmod1 NMOS VTO=1.8 IS=1E-15 KP=0.5 PB=1 LAMBDA=1.5E-3 .MODEL Mmod2 NMOS VTO=1.3 RS=2 KP=0.1 PB=1 LAMBDA=1.5E-3 .MODEL Dmod1 D IS=1E-12 BV=220 RS=1 CJO=124E-12 M=0.7 VJ=0.36 .MODEL Smod1a VSWITCH RON=.001 ROFF=100 VON=-6 VOFF=-4 .MODEL Smod1b VSWITCH RON=.001 ROFF=100 VON=-4 VOFF=-6 .MODEL Smod2a VSWITCH RON=.001 ROFF=100 VON=-1.5 VOFF=1.5 .MODEL Smod2b VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=-1.5 .MODEL Smod3 VSWITCH RON=0.1 ROFF=90 VON=4.5 VOFF=25 .MODEL Rmod1 RES (TC1=8E-3 TC2=1.8E-5) .ENDS ZVN2120G * *$ * *ZETEX ZVN3306A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3306A 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS ZVN3306A * *$ * *ZETEX ZVN3306F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3306F 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS ZVN3306F * *$ * *ZETEX ZVN3310A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3310A 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS ZVN3310A * *$ * *ZETEX ZVN3310F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3310F 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS ZVN3310F * *$ * *ZETEX ZVN3320F Spice Model v1.0 Last Revised 27/5/02 * .SUBCKT ZVN3320F 3 4 5 * ----connections---- D G S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 190 RIN 2 8 200E6 RD 3 6 RDSMOD 18 RS 8 5 RDSMOD 1.5 RL 3 5 35E6 C1 2 8 6.5E-12 *C2 2 3 1E-12 C3 15 14 3.8E-12 C4 16 8 5.3E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=1.55 IS=1E-15 KP=0.07 CBD=39E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.007 PB=1 .MODEL DMOD1 D IS=3E-8 RS=.17 N=1.95 TT=1e-9 BV=220 IBV=1E-3 .MODEL DMOD2 D CJO=1.8E-12 IS=1E-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=1 VOFF=-1 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=3.5 VOFF=1.5 .MODEL RDSMOD RES (TC1=7E-3 TC2=4.2E-5) .ENDS ZVN3320F * *$ * *ZETEX ZVN4106F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4106F 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 343 RL 3 5 6E6 C1 2 5 23.5P C2 3 2 4.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 +CBD=53.5P PB=1 LAMBDA=267E-6 .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222 .ENDS ZVN4106F * *$ * *ZETEX ZVN4206A Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206A 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206A * *$ * *ZETEX ZVN4206AV Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206AV 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206AV * *$ * *ZETEX ZVN4206G Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206G 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206G * *$ * *ZETEX ZVN4206GV Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206GV 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206GV * *$ * *ZETEX ZVN4210A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4210A 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 401.5 RL 3 5 1E7 C1 2 5 61.5P C2 3 2 3.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082 +CBD=108P PB=1 LAMBDA=0 .MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166 .ENDS ZVN4210A * *$ * *ZETEX ZVN4210G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4210G 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 401.5 RL 3 5 1E7 C1 2 5 61.5P C2 3 2 3.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082 +CBD=108P PB=1 LAMBDA=0 .MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166 .ENDS ZVN4210G * *$ * *ZETEX ZVN4306A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4306A 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306A * *$ * *ZETEX ZVN4306AV Spice Model v1.0 Last Revised 23/3/06 * .SUBCKT ZVN4306AV 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306AV * *$ * *ZETEX ZVN4306G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4306G 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306G * *$ * *ZETEX ZVN4306GV Spice Model v1.0 Last Revised 23/2/06 * .SUBCKT ZVN4306GV 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306GV * *$ * *ZETEX ZVN4310A Spice Model v1.1 Last Revised 8/2/02 * .SUBCKT ZVN4310A 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 82 RL 3 5 1E7 C1 2 5 200E-12 C2 3 2 13.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02 +CBD=288E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844 .ENDS ZVN4310A * *$ * *ZETEX ZVN4310G Spice Model v1.1 Last Revised 8/2/02 * .SUBCKT ZVN4310G 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 82 RL 3 5 1E7 C1 2 5 200E-12 C2 3 2 13.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02 +CBD=288E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844 .ENDS ZVN4310G * *$ * *ZETEX ZVN4424A Spice Model v1.2 Last Revised 20/3/01 * .SUBCKT ZVN4424A 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N4424AM M2 6 2 8 8 N4424AMS RG 4 2 9 RD 3 6 3.6 RS 8 5 0.15 RL 3 5 240E6 C1 2 8 137E-12 C2 2 3 15E-12 C3 15 14 385E-12 C4 16 8 220E-12 D1 5 3 N4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85 +CBD=66.2E-12 PB=1 .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085 +CBD=.66E-12 PB=1 .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=-2.5 .ENDS ZVN4424A * *$ * *ZETEX ZVN4424G Spice Model v1.2 Last Revised 20/3/01 * .SUBCKT ZVN4424G 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N4424AM M2 6 2 8 8 N4424AMS RG 4 2 9 RD 3 6 3.6 RS 8 5 0.15 RL 3 5 240E6 C1 2 8 137E-12 C2 2 3 15E-12 C3 15 14 385E-12 C4 16 8 220E-12 D1 5 3 N4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85 +CBD=66.2E-12 PB=1 .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085 +CBD=.66E-12 PB=1 .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=-2.5 .ENDS ZVN4424G * *$ * * *Zetex ZVN4424Z Spice Model v1 Last Revised 28/7/08 * .SUBCKT ZVN4424Z 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N4424AM M2 6 2 8 8 N4424AMS RG 4 2 35 RD 3 6 3.6 RS 8 5 0.15 RL 3 5 240E6 D1 5 3 N4424AD Egs2 13 8 2 8 1 Eds1 14 8 6 8 1 C1 2 8 145E-12 C2 2 3 11E-12 C3 15 14 235E-12 C4 16 8 226E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1 VOFF=2 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2 VOFF=1 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-4 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-4 VOFF=-3 .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85 +CBD=66.2E-12 PB=1 .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085 +CBD=.66E-12 PB=1 .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078 .ENDS ZVN4424Z * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *ZETEX ZVN4525E6 Spice Model v1.0 Last Revised 4/8/2004 * .SUBCKT ZVN4525E6 3 4 5 *------connections-------D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 4.8 RS 8 5 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46 .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046 .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=-1.7 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=2.75 VOFF=-1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN4525G Spice Model v1.0 Last Revised 21/05/2004 * .SUBCKT ZVN4525G 3 4 5 *------connections-------D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 4.8 RS 8 5 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46 .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046 .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=-1.7 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=2.75 VOFF=-1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVN4525Z Spice Model v1.0 Last Revised 4/8/2004 * .SUBCKT ZVN4525Z 3 4 5 *------connections-------D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 4.8 RS 8 5 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46 .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046 .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=-1.7 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=2.75 VOFF=-1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVNL110A Spice Model v1.0 Last Revised 19/3/03 * .SUBCKT ZVNL110A 3 4 5 * D G S M1 21 22 23 23 MNL110a M2 21 22 23 23 MNL110b RG 4 22 120 RD 3 21 2 RS 5 23 1 RL 3 5 1E9 C1 22 5 55E-12 C2 3 22 5E-12 D1 5 3 DNL110a * .MODEL MNL110a NMOS VTO=2.1 IS=1E-15 KP=0.2 CBD=60E-12 PB=1 +LAMBDA=2.6E-3 .MODEL MNL110b NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL DNL110a D IS=1E-12 RS=0.37 BV=105 .ENDS ZVNL110A * *$ * *ZETEX ZVNL110G Spice Model v1.0 Last Revised 19/3/03 * .SUBCKT ZVNL110G 3 4 5 * D G S M1 21 22 23 23 MNL110a M2 21 22 23 23 MNL110b RG 4 22 120 RD 3 21 2 RS 5 23 1 RL 3 5 1E9 C1 22 5 55E-12 C2 3 22 5E-12 D1 5 3 DNL110a * .MODEL MNL110a NMOS VTO=2.1 IS=1E-15 KP=0.2 CBD=60E-12 PB=1 +LAMBDA=2.6E-3 .MODEL MNL110b NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL DNL110a D IS=1E-12 RS=0.37 BV=105 .ENDS ZVNL110G * *$ * *ZETEX ZVNL120A Spice Model v1.0 Last Revised 27/9/04 * .SUBCKT ZVNL120A 3 4 5 * D G S M1 21 2 23 23 Mmod1 M2 21 2 23 23 Mmod2 J1 24 25 21 Jmod RJ 25 23 1000 RG 4 22 90 RD1 3 24 Rmod1 2 RD2 21 24 Rmod1 20 RS 5 23 Rmod1 1 RL 3 5 1.5E9 RIN 22 5 2E9 C1 22 5 85E-12 C2 3 22 7E-12 D1 5 3 Dmod Igt 5 31 1 Rgt 31 32 Rmod2 1 Vgt 5 32 1 Egt 22 2 5 31 1 .MODEL Mmod1 NMOS VTO=1.7 IS=1E-15 KP=0.5 CBD=20E-12 PB=1 +LAMBDA=2.6E-3 .MODEL Mmod2 NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL Jmod NJF Beta=15m Betatce=-.5 Lambda=50m Vto=-6.25 Vtotc=-2.5m .MODEL Dmod D IS=1E-12 RS=0.5 BV=205 .MODEL Rmod1 RES (TC1=9e-3 TC2=2.5E-5) .MODEL Rmod2 RES (TC1=2.4e-3 TC2=1E-6) .ENDS ZVNL120A * *$ * *ZETEX ZVNL120G Spice Model v1.0 Last Revised 27/9/04 * .SUBCKT ZVNL120G 3 4 5 * D G S M1 21 2 23 23 Mmod1 M2 21 2 23 23 Mmod2 J1 24 25 21 Jmod RJ 25 23 1000 RG 4 22 90 RD1 3 24 Rmod1 2 RD2 21 24 Rmod1 20 RS 5 23 Rmod1 1 RL 3 5 1.5E9 RIN 22 5 2E9 C1 22 5 85E-12 C2 3 22 7E-12 D1 5 3 Dmod Igt 5 31 1 Rgt 31 32 Rmod2 1 Vgt 5 32 1 Egt 22 2 5 31 1 .MODEL Mmod1 NMOS VTO=1.7 IS=1E-15 KP=0.5 CBD=20E-12 PB=1 +LAMBDA=2.6E-3 .MODEL Mmod2 NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL Jmod NJF Beta=15m Betatce=-.5 Lambda=50m Vto=-6.25 Vtotc=-2.5m .MODEL Dmod D IS=1E-12 RS=0.5 BV=205 .MODEL Rmod1 RES (TC1=9e-3 TC2=2.5E-5) .MODEL Rmod2 RES (TC1=2.4e-3 TC2=1E-6) .ENDS ZVNL120G * *$ * *ZETEX ZVP0545A Spice Model v1.0 Last Revised 4/8/2004 * * .SUBCKT ZVP0545A 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 85 RIN 2 8 200E6 RD 3 6 RMOD1 71 RS 8 5 RMOD1 6.6 RL 3 5 200E6 C1 2 8 110E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVP0545G Spice Model v1.2 Last Revised 20/05/2004 * * .SUBCKT ZVP0545G 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 85 RIN 2 8 200E6 RD 3 6 RMOD1 71 RS 8 5 RMOD1 6.6 RL 3 5 200E6 C1 2 8 110E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * *ZETEX ZVP1320F Spice Model v1.0 Last Revised 13/06/02 * .SUBCKT ZVP1320F 3 4 5 * D G S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 56 RIN 2 8 200E6 RD 3 6 RDSMOD 71 RS 8 5 RDSMOD 6.6 RL 3 5 200E6 C1 2 8 42E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 Egs1 2 17 2 8 1 .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1 .MODEL DMOD1 D IS=2E-13 RS=0.12 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10 .MODEL RDSMOD RES (TC1=8E-3 TC2=3E-5) .ENDS ZVP1320F * *$ * *ZETEX ZVP1320FQ Spice Model v1.0 Last Revised 21/08/13 * .SUBCKT ZVP1320FQ 3 4 5 * D G S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 56 RIN 2 8 200E6 RD 3 6 RDSMOD 71 RS 8 5 RDSMOD 6.6 RL 3 5 200E6 C1 2 8 42E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 Egs1 2 17 2 8 1 .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1 .MODEL DMOD1 D IS=2E-13 RS=0.12 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10 .MODEL RDSMOD RES (TC1=8E-3 TC2=3E-5) .ENDS ZVP1320FQ * *$ * *ZETEX ZVP2106A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP2106A 3 4 5 * D G S M1 3 2 5 5 MP2106 RG 4 2 160 RL 3 5 1.2E8 C1 2 5 47E-12 C2 3 2 10E-12 D1 3 5 DP2106 * .MODEL MP2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277 +CBD=105E-12 PB=1 LAMBDA=1.2E-2 .MODEL DP2106 D IS=2E-13 RS=0.309 .ENDS ZVP2106A * *$ * *ZETEX ZVP2106G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP2106G 3 4 5 * D G S M1 3 2 5 5 MP2106 RG 4 2 160 RL 3 5 1.2E8 C1 2 5 47E-12 C2 3 2 10E-12 D1 3 5 DP2106 * .MODEL MP2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277 +CBD=105E-12 PB=1 LAMBDA=1.2E-2 .MODEL DP2106 D IS=2E-13 RS=0.309 .ENDS ZVP2106G * *$ * *ZETEX ZVP2110A Spice Model v1.0 Last Revised 23/7/04 * .SUBCKT ZVP2110A 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 65 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 2.5 C1 2 5 140E-12 **C2 3 2 15E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=105E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=1 .MODEL Dmod2 D CJO=60e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=8e-3 TC2=4.2E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6) .ENDS ZVP2110A * *$ * *ZETEX ZVP2110G Spice Model v1.0 Last Revised 22/7/04 * .SUBCKT ZVP2110G 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 65 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 2.5 C1 2 5 140E-12 **C2 3 2 15E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=105E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=1 .MODEL Dmod2 D CJO=60e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=8e-3 TC2=4.2E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6) .ENDS ZVP2110G * *$ * *ZETEX ZVP2120A Spice Model v1.0 Last Revised 10/8/05 * .SUBCKT ZVP2120A 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 **C2 3 2 15E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS ZVP2120A * *$ * *ZETEX ZVP2120G Spice Model v1.0 Last Revised 10/8/05 * .SUBCKT ZVP2120G 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 **C2 3 2 15E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS ZVP2120G * *$ * *ZETEX ZVP3306A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP3306A 3 4 5 * D G S M1 3 2 5 5 P3306M RG 4 2 252 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 3 5 P3306D * .MODEL P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 KP=.145 +CBD=35E-12 PB=1 LAMBDA=6.67E-3 .MODEL P3306D D IS=5E-12 RS=.768 .ENDS ZVP3306A * *$ * *ZETEX ZVP3306F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP3306F 3 4 5 * D G S M1 3 2 5 5 P3306M RG 4 2 252 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 3 5 P3306D * .MODEL P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 KP=.145 +CBD=35E-12 PB=1 LAMBDA=6.67E-3 .MODEL P3306D D IS=5E-12 RS=.768 .ENDS ZVP3306F * *$ * *ZETEX ZVP3310A Spice Model v1.0 Last Revised 23/7/04 * .SUBCKT ZVP3310A 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 50 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 5 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.1 RS=2 IS=1E-15 KP=0.2 +CBD=35E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=1 .MODEL Dmod2 D CJO=20e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=9e-3 TC2=4.2E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6) .ENDS ZVP3310A * *$ * *ZETEX ZVP3310F Spice Model v1.1 Last Revised 22/7/04 * .SUBCKT ZVP3310F 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 50 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 5 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.1 RS=2 IS=1E-15 KP=0.2 +CBD=35E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=1 .MODEL Dmod2 D CJO=20e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=9e-3 TC2=4.2E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6) .ENDS ZVP3310F * *$ * * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *ZETEX ZVP3310FQ Spice Model v1.1 Last Revised 22/7/04 * .SUBCKT ZVP3310FQ 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 50 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 5 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.1 RS=2 IS=1E-15 KP=0.2 +CBD=35E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=1 .MODEL Dmod2 D CJO=20e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=9e-3 TC2=4.2E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6) .ENDS ZVP3310FQ * *$ * *ZETEX ZVP4105A Spice Model v1.0 Last Revised 31/3/05 * .SUBCKT ZVP4105A 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 167 RL 3 5 50E6 C1 2 5 26P C2 3 2 4P D1 3 5 DIODE1 * .MODEL MOD1 PMOS VTO=-1.709 RS=3.091 RD=0.979 IS=1E-15 KP=0.146 +CBD=12P PB=1 .MODEL DIODE1 D IS=1.072E-13 RS=0.527 N=1.077 .ENDS ZVP4105A * *$ * *ZETEX ZVP4424A Spice Model v1.1 Last Revised 21/3/01 * .SUBCKT ZVP4424A 3 4 5 *------connections-------D-G-S * M1 6 2 8 8 P4424AM M2 6 2 8 8 P4424AMS RG 4 2 27 RD 3 6 5.5 RS 8 5 0.6 RL 3 5 240E6 C1 2 8 120E-12 C2 2 3 20E-12 C3 15 14 260E-12 C4 16 8 233E-12 D1 3 5 P4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1 .MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=0.653E-12 PB=1 .MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-1.5 VOFF=-1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=2.5 .ENDS ZVP4424A * *$ * *ZETEX ZVP4424G Spice Model v1.1 Last Revised 21/3/01 * .SUBCKT ZVP4424G 3 4 5 *------connections-------D-G-S * M1 6 2 8 8 P4424AM M2 6 2 8 8 P4424AMS RG 4 2 27 RD 3 6 5.5 RS 8 5 0.6 RL 3 5 240E6 C1 2 8 120E-12 C2 2 3 20E-12 C3 15 14 260E-12 C4 16 8 233E-12 D1 3 5 P4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1 .MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=0.653E-12 PB=1 .MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-1.5 VOFF=-1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=2.5 .ENDS ZVP4424G * *$ * * *Zetex ZVP4424Z Spice Model v1.0 Last Revised 17/07/2008 * .SUBCKT ZVP4424Z 3 4 5 *------connections-------D-G-S * M1 6 2 8 8 P4424AM M2 6 2 8 8 P4424AMS RG 4 2 27 RD 3 6 5.5 RS 8 5 0.6 RL 3 5 240E6 D1 3 5 P4424AD Egs2 13 8 2 8 1 Eds1 14 8 6 8 1 C1 2 8 125E-12 C2 2 3 15E-12 C3 15 14 210E-12 C4 16 8 220E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-1 VOFF=-2 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-1 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=3.5 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=3.5 VOFF=2.5 .MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1 .MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=270E-12 PB=1 .MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045 .ENDS ZVP4424Z * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *ZETEX ZVP4525E6 Spice Model v1.0 Last Revised 6/01/2005 * .SUBCKT ZVP4525E6 3 4 5 *---connections---D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 11 RS 8 5 RMOD1 0.5 RB 3 7 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 7 5 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.15 .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.0015 .MODEL DMOD1 D IS=4.14E-13 N=1.0078 CJO=100E-12 BV=260 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=1.7 VOFF=-2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=-2.75 VOFF=1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=3.5 VOFF=1.5 .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS * *$ * *ZETEX ZVP4525G Spice Model v1.0 Last Revised 6/01/2005 * .SUBCKT ZVP4525G 3 4 5 *---connections---D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 11 RS 8 5 RMOD1 0.5 RB 3 7 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 7 5 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.15 .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.0015 .MODEL DMOD1 D IS=4.14E-13 N=1.0078 CJO=100E-12 BV=260 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=1.7 VOFF=-2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=-2.75 VOFF=1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=3.5 VOFF=1.5 .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS * *$ * *ZETEX ZVP4525GQ Spice Model v1.1 Last Revised 07/03/2022 * .SUBCKT ZVP4525GQ 3 4 5 *---connections---D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 10 RS 8 5 RMOD1 0.5 RB 3 7 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 7 5 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.14 .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.005 .MODEL DMOD1 D IS=5.14E-13 N=1.05 CJO=500E-12 BV=260 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=1.7 VOFF=-2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=-2.75 VOFF=1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=3.5 VOFF=1.5 .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX ZVP4525Z Spice Model v1.0 Last Revised 6/01/2005 * .SUBCKT ZVP4525Z 3 4 5 *---connections---D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 11 RS 8 5 RMOD1 0.5 RB 3 7 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 7 5 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.15 .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.0015 .MODEL DMOD1 D IS=4.14E-13 N=1.0078 CJO=100E-12 BV=260 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=1.7 VOFF=-2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=-2.75 VOFF=1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=3.5 VOFF=1.5 .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS * *$ * *ZETEX ZX5T2E6 Spice Model v1.0 Last revision 07/06/07 * .MODEL ZX5T2E6 PNP IS=11E-13 BF=610 NF=1 VAF=20.1 IKF=2.5 ISE=1.1E-13 +NE=1.49 BR=75 NR=1 VAR=4.3 IKR=1 ISC=1.1e-13 NC=1.31 RE=0.0072 RB=0.3 +RC=0.012 CJE=460E-12 VJE=1.0 MJE=0.54 CJC=170E-12 VJC=0.62 MJC=0.42 +TF=9E-10 TR=8.5e-9 RCO=0.5 GAMMA=25E-10 QUASIMOD=1 XTB=1.5 TRE1=.003 +TRB1=.003 TRC1=.003 * *$ * *ZETEX ZX5T3Z Spice Model v1.1 Last Revised 3/6/2004 * .MODEL ZX5T3 PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26 +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3 +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9 +XTB=1.5 * *$ * *ZETEX ZX5T3Z Spice Model v1.1 Last Revised 3/6/2004 * .MODEL ZX5T3 PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26 +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3 +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9 +XTB=1.5 * *$ * *ZETEX ZX5T851A Spice Model v1.1 Last Revised 23/03/2006 * .MODEL ZX5T851A NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * *ZETEX ZX5T851G Spice Model v1.1 Last Revised 23/03/2006 * .MODEL ZX5T851G NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * *ZETEX ZX5T851G Spice Model v1.1 Last Revised 23/03/2006 * .MODEL ZX5T851G NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * .MODEL ZX5T853G NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13 + NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15 + RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78 + QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4 + TRC1=0.003 TRB1=0.003 TRE1=0.003 * *$ *ZETEX ZX5T949G Spice Model v1.0 Last Revised 18/03/05 * .MODEL ZX5T949G PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * *ZETEX ZX5T951G Spice Model v2.0 Last revision 09/01/07 * .MODEL ZX5T951G PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * *ZETEX ZX5T951G Spice Model v2.0 Last revision 09/01/07 * .MODEL ZX5T951G PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * *ZETEX ZX5T953G Spice Model v1.0 Last revision 13/12/06 * .MODEL ZX5T953G PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6 +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019 +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9 +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10 * *$ * *ZETEX ZX5T953G Spice Model v1.0 Last revision 13/12/06 * .MODEL ZX5T953G PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6 +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019 +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9 +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10 * *$ * *DIODES_INC_SPICE_MODEL ZX5T955G *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL ZX5T955G PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL ZX5T955Z *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL ZX5T955Z PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZXCL280 Spice Model v1.0 Last revision 13/12/06 * *NOTE: This is a simplified model not all features are modeled. * .subckt ZXCL280 1 2 3 4 * NODES: GND EN VIN VOUT M1 4 8 3 3 MOD1 C1 8 3 126E-12 C2 4 8 20E-12 C3 1 10 130E-12 C4 1 11 2E-9 C5 1 15 10E-9 C6 13 1 400E-12 D1 4 3 Dmod1 D2 5 7 Dmod2 D3 1 5 Dmod2 R1 4 9 63.25E3 R2 9 1 50E3 R30 5 6 10E3 R3 10 5 3000 R4 11 5 180E3 R5 15 5 2E6 R6 2 13 1E6 R7 2 1 55E6 R8 3 4 50E6 R9 5 8 34 R10 1 12 Rmod1 1 S1 3 5 13 1 Smod1 E1 3 6 12 9 100 E2 7 1 3 1 1.0 I1 1 12 1.25 .MODEL MOD1 PMOS (VTO=-0.82 RS=0.6 RD=0.2 IS=1E-15 KP=0.73 CBD=60E-12 KF=2e-19 AF=1.22) .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1) .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5) .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7) .MODEL Smod1 VSWITCH (RON=1 ROFF=1E6 VON=0 VOFF=1) .ENDS ZXCL280 * *$ * *ZETEX ZXCL300 Spice Model v1.0 Last revision 13/12/06 * *NOTE: This is a simplified model not all features are modeled. * .subckt ZXCL300 1 2 3 4 * NODES: GND EN VIN VOUT M1 4 8 3 3 MOD1 C1 8 3 126E-12 C2 4 8 20E-12 C3 1 10 130E-12 C4 1 11 2E-9 C5 1 15 10E-9 C6 13 1 400E-12 D1 4 3 Dmod1 D2 5 7 Dmod2 D3 1 5 Dmod2 R1 4 9 71.4E3 R2 9 1 50E3 R30 5 6 10E3 R3 10 5 3000 R4 11 5 180E3 R5 15 5 2E6 R6 2 13 1E6 R7 2 1 55E6 R8 3 4 50E6 R9 5 8 34 R10 1 12 Rmod1 1 S1 3 5 13 1 Smod1 E1 3 6 12 9 100 E2 7 1 3 1 1.0 I1 1 12 1.25 .MODEL MOD1 PMOS (VTO=-0.82 RS=0.6 RD=0.2 IS=1E-15 KP=0.73 CBD=60E-12 KF=2e-19 AF=1.22) .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1) .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5) .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7) .MODEL Smod1 VSWITCH RON=1 ROFF=1E6 VON=0 VOFF=1 .ENDS ZXCL300 * *$ * *ZETEX ZXCT1008F Spice Model v1.0 Last revision 15/08/07 * * .SUBCKT ZXCT1008F 1 2 3 * *Pins 1.Load 2.Vin 3.Iout * I1 4 3 4uA R6 4 3 20E6 R1 2 4 Rmod1 1 Q1 4 5 3 LargeN C1 5 11 3E-9 R5 11 3 10 R2 5 6 10E3 D1 6 8 Dmod R3 7 6 1 V2 8 3 10 E1 7 3 4 9 1000 V1 10 1 100e-3 I2 9 10 100E-3 R4 9 10 Rmod2 1 .MODEL Dmod D IS=1E-15 BV=20 IBV=1E-3 .MODEL LargeN NPN IS=3.8E-16 LOT/1/UNIFORM=50% DEV/GAUSS=1% + BF=220 LOT/1/UNIFORM=50% DEV/GAUSS=1% NK=.75 IKF=17e-3 VAF=60 + ISE=1.8E-16 NE=1.4 BR=.7 IKR=3e-2 VAR=7 ISC=5E-12 NC=1.321 RB=300 + RE=19.7 RC=63.4 CJC=51E-12 MJC=.42 VJC=.595 CJE=.21E-12 MJE=.33 + VJE=.7 TF=1.5E-10 TR=6E-9 XTF=0.3 VTF=6 ITF=5E-5 XTB=1.17 XTI=5.4 + KF=2E-13 AF=1.4 .MODEL Rmod1 RES (R=99.5 TC1=1E-3 TC2=1E-5 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .MODEL Rmod2 RES (R=1 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .ENDS * *$ * *ZETEX ZXCT1009F Spice Model v2.1 Last revision 02/02/07 * * .SUBCKT ZXCT1009F 1 2 3 * *Pins 1.Load 2.Vin 3.Iout * I1 4 3 4uA R6 4 3 20E6 R1 2 4 Rmod1 1 Q1 4 5 3 LargeN C1 5 11 3E-9 R5 11 3 10 R2 5 6 10E3 D1 6 8 Dmod R3 7 6 1 V2 8 3 10 E1 7 3 4 9 1000 V1 10 1 100e-3 I2 9 10 100E-3 R4 9 10 Rmod2 1 .MODEL Dmod D IS=1E-15 BV=20 IBV=1E-3 .MODEL LargeN NPN IS=3.8E-16 LOT/1/UNIFORM=50% DEV/GAUSS=1% + BF=220 LOT/1/UNIFORM=50% DEV/GAUSS=1% NK=.75 IKF=17e-3 VAF=60 + ISE=1.8E-16 NE=1.4 BR=.7 IKR=3e-2 VAR=7 ISC=5E-12 NC=1.321 RB=300 + RE=19.7 RC=63.4 CJC=51E-12 MJC=.42 VJC=.595 CJE=.21E-12 MJE=.33 + VJE=.7 TF=1.5E-10 TR=6E-9 XTF=0.3 VTF=6 ITF=5E-5 XTB=1.17 XTI=5.4 + KF=2E-13 AF=1.4 .MODEL Rmod1 RES (R=99.5 TC1=1E-3 TC2=1E-5 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .MODEL Rmod2 RES (R=1 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .ENDS * *$ * *TITLE=ZXCT1010 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=14th July 2010 *VERSION=1 *PIN_ORDER 2:GND, 3:OUT, 4:S+, 5:S- (Pin 1 is NC) * .subckt ZXCT1010 GND OUT S+ S- * pins------------2---3--4--5 * R1 S- FILT 100k ;input filter C1 S+ FILT 20p ;input filter R2 S+ GND 1Meg ;quiescent current at 5V * Output as a voltage: first part of expression limits resonse to zero for negative input * tanh function limits output when supply is less than 1.1V above Vout E1 E1OUT GND VALUE={ max(V(S+)-V(FILT),0)*tanh( 20*max(V(S-)-1.1-V(OUT),0) ) } R3 E1OUT GND 1Meg * Transconductance = 1/100 A/V, with temperature dependence G1 S+ OUT VALUE={(V(E1OUT) - V(GND))*(1/100)*(1.01-0.0003*TEMP-6e-6*(TEMP**2)-5e-8*(TEMP**3)+2.7e-10*(TEMP**4))} .ends ZXCT1010 * * * (c) 2010 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *TITLE=ZXCT1030 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=14th June 2010 *VERSION=1 *PIN_ORDER 1:VCC, 2:VS-, 3:VS+, 4:GND, 5:COMPIN, 6:REF, 7:OUT, 8:COMPOUT * .subckt ZXCT1030 VCC VS- VS+ GND COMPIN REF OUT COMPOUT * pins------------1--2----3---4---5------6---7----8 * *Voltage reference R1 REFG REF 34 V1 REFG GND 1.24 * * Current sense amplifier limited by supply voltage R2 GND VCC 58k ;quiescent current at 5V R3 VS- AIN- 100k ;input filter C1 VS+ AIN- 1p ;input filter G1 VS+ OUT VALUE={ max(V(VS+)-V(AIN-),0)/150*tanh ( 20*max(V(VS+)-1.1-V(OUT),0) ) } R4 OUT GND 1.5k ;output resistance * *Comparator with VS- undervoltage detection and limited by supply voltage E2 DELTA GND VALUE = { V(OUT)-V(COMPIN)+0.015*V(E3OUT) } R5 DELTA COMPINT 1k ; delay filter C2 COMPINT GND 150p ; delay filter E3 E3OUT GND VALUE={ 0.5*(1+tanh(V(COMPINT)*10000)) } E4 S1IN GND VALUE={ ( V(E3OUT)+tanh(20*max(2.1-V(VS-),0)) )*tanh(20*max(V(VCC)-2.1,0)) } * *Output transistor open collector S1 COMPOUT GND S1IN GND _S1 .MODEL _S1 VSWITCH Roff=10e6 Ron=300 Voff=0.25 Von=0.75 * .ends ZXCT1030 * * (c) 2010 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * * *Zetex ZXCT1080 Spice Model v2.0 Last Revised 28/04/08 * .SUBCKT ZXCT1080 1 2 3 4 5 * *Pins = Gnd, Vcc, S+, S-, Vout * R1 2 1 1E6 R2 4 1 1E8 R3 13 14 1000 R4 15 5 Rmod1 3.5 R5 16 12 9 R6 12 1 Rmod2 1 R7 3 1 1E6 R8 21 22 Rmod3 1 C1 14 1 3E-10 E1 16 1 value={((V(3)-V(4))*100)+(V(3)/466*(V(3)-V(4))+((V(2)-5)/100)+0.025+(V(21)*10))} E2 13 1 value={V(12)-((V(12)-V(2))*(TANH((V(12)-V(2))*110)+1)/2)} E3 15 1 value={V(14)*((TANH(V(14)*100)+1)/2)} I1 1 21 1 V1 1 22 1 .MODEL Rmod1 RES (TC1=6e-3 ) .MODEL Rmod2 RES (TC1=5e-6 ) .MODEL Rmod3 RES (TC1=5e-5 ) .ENDS ZXCT1080 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *TITLE=ZXCT1082 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Sept 2011 *VERSION=2 *PIN_ORDER 1:OUT 2:GND, 3:S+, 4:S-, 5:VCC *Does not include temperature dependence of offset error, gain or input current. *Includes roughly approximated temperature effect of low voltage operating knee of VS- and VCC. .subckt ZXCT1082 OUT GND S+ S- VCC * pins------------1---2---3---4---5 .PARAM VTH1 = {1-0.004*(TEMP-25)} .PARAM KG ={1e-4/(2-VTH1)**2} ; rnom/(VON-VTH1)^2 D1 S+ 1 DHM D2 1 S- DHM D3 S- 2 DHM D4 2 S+ DHM D7 GND VCC DHM D8 GND S- DHM D9 GND S+ DHM *input current typ 1.7uA at Vcc=VS+=12V G1 S+ GND value={(1.4u+((V(VCC)-V(GND)-4)/42e6)+((V(S+)-V(GND))/6e8)) + *0.25*(1+tanh(10*(V(VCC)-V(GND)-3.5)))*(1+tanh(20*(V(S+)-V(GND)-1)))} G2 S- GND value={(1.4u+((V(VCC)-V(GND)-4)/42e6)+((V(S+)-V(GND))/6e8)) + *0.25*(1+tanh(10*(V(VCC)-V(GND)-3.5)))*(1+tanh(20*(V(S+)-V(GND)-1)))} R1 S+ FILT 10k ;input filter C1 FILT S- 1pf ;input filter R2 VCC GND 3.75Meg ;Vcc quiescent current, typ 16uA at 60V G3 S- SIN VALUE={0.1*((1+tanh(10*(V(S-)-V(FILT))))*tanh(50*max(V(S-)-V(SIN),0)) + +(-1+tanh(10*(V(S-)-V(FILT))))*tanh(50*max(V(SIN)-V(GND),0))) + *tanh(20*max(V(VCC)-VTH1,0))} C5 S- GND 3p C6 S+ GND 2p C4 SIN FILT 100f R3 S+ SIN 1G C2 SIN S+ 500f R6 S+ S+A 1k G4 S+A OUT VALUE={KG*(max(V(S+A)-V(SIN)-VTH1,0)**2)*(V(S+A)-V(OUT))} R4 S+ OUT 8G C3 SIN OUT 80f C7 OUT GND 1.25p * zener diode D5 SIN S+ DHM D6 S+ Z1 DHM I1 SIN Z1 0.192 RZ Z1 SIN 100 .model DHM D IS=6.3E-16 BV=65 .ends ZXCT1082 * * (c) 2011 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA * *Zetex ZXGD3001E6 Spice Model v2.0 Last Revised 17/09/08 * .SUBCKT ZXGD3001E6 1 2 3 4 5 6 *pins Vcc, In1, Gnd, Sink, In2, Source Q1 1 2 6 ZXGD3001N Q2 3 5 4 ZXGD3001P * .MODEL ZXGD3001N NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 + BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 + CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 + XTB=1.4 * .MODEL ZXGD3001P PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13 + IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010 + RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35 + VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * .ENDS ZXGD3001E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA * *Zetex ZXGD3002E6 Spice Model v2.0 Last Revised 17/09/08 * .SUBCKT ZXGD3002E6 1 2 3 4 5 6 *pins Vcc, In1, Gnd, Sink, In2, Source Q1 1 2 6 ZXGD3002N Q2 3 5 4 ZXGD3002P * .MODEL ZXGD3002N NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4 + BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085 + CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 + RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4 * .MODEL ZXGD3002P PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49 + NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9 + GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10 + TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 * .ENDS ZXGD3002E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=28Aug2018 *VERSION=3.0 ** PIN ORDER 1=Vcc 2=IN1 3=Vee 4=SINK 5=IN2 6=SOURCE .SUBCKT ZXGD3003E6 1 2 3 4 5 6 Q1 1 2 6 ZXGD3003N Q2 3 5 4 ZXGD3003P .MODEL ZXGD3003N NPN IS=2.5E-13 NF=1 BF=600 IKF=1 VAF=51 ISE=2E-13 +NE=1.4 NR=1 BR=150 IKR=.5 VAR=25 ISC=1e-13 NC=1.47 RB=0.5 +RE=0.055 RC=0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF=0.8E-9 +TR=30e-9 .MODEL ZXGD3003P PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25 + ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 + RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 + VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 .ENDS ZXGD3003E6 * (c) 2018 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *Zetex ZXGD3003E6 Spice Model v2.0 Last Revised 17/09/08 * .SUBCKT ZXGD3003E6 1 2 3 4 5 6 *pins Vcc, In1, Gnd, Sink, In2, Source Q1 1 2 6 ZXGD3003N Q2 3 5 4 ZXGD3003P * .MODEL ZXGD3003N NPN IS=2.5E-13 NF=1 BF=600 IKF=1 VAF=51 ISE=2E-13 +NE=1.4 NR=1 BR=150 IKR=.5 VAR=25 ISC=1e-13 NC=1.47 RB=0.5 +RE=0.055 RC=0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF=0.8E-9 +TR=30e-9 * .MODEL ZXGD3003P PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25 + ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 + RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 + VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 * .ENDS ZXGD3003E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA * *Zetex ZXGD3004E6 Spice Model v2.0 Last Revised 17/09/08 * .SUBCKT ZXGD3004E6 1 2 3 4 5 6 *pins Vcc, In1, Gnd, Sink, In2, Source Q1 1 2 6 ZXGD3004N Q2 3 5 4 ZXGD3004P * .MODEL ZXGD3004N NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * .MODEL ZXGD3004P PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 * .ENDS ZXGD3004E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *TITLE=ZXGD3005 MACROMODEL *DATE=26Jan2012 *ORIGIN=DZSL_DPG_SU *SIMULATOR=DIODES, SIMETRIX and PSPICE *VERSION=1 .SUBCKT ZXGD3005 VCC IN VEE SINK SOURCE LIN IN 6 2n RIN 6 7 1 D1 7 8 DMOD D2 9 7 DMOD RI1 7 8 1000K RI2 9 7 1000K CI1 7 8 5.5p CI2 9 7 5.5p RO1 8 10 100K R02 9 11 100K RsourceI 10 12 1.5 RsinkI 11 13 1.5 D3 12 8 DMOD D4 9 13 DMOD LCC VCC 8 2n LEE VEE 9 2n Lsource 12 SOURCE 1n Lsink 13 SINK 1n G1 8 10 VALUE={1.39e-11*exp((V(7)-V(10))/.0032)*.5*(1+tanh(10*MAX(V(8)-V(7),0)))} G2 11 9 VALUE={1.39e-11*exp((V(11)-V(7))/.0032)*.5*(1-tanh(10*MAX(V(9)-V(7),0)))} .MODEL DMOD D(IS=8p BV=30) .ENDS .SIMULATOR DEFAULT * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE=ZXGD3006 MACROMODEL *DATE=26Jan2012 *ORIGIN=DZSL_DPG_SU *SIMULATOR=DIODES, SIMETRIX and PSPICE *VERSION=1 .SUBCKT ZXGD3006 VCC IN VEE SINK SOURCE LIN IN 6 2n RIN 6 7 1 D1 7 8 DMOD D2 9 7 DMOD RI1 7 8 1000K RI2 9 7 1000K CI1 7 8 5.5p CI2 9 7 5.5p RO1 8 10 100K R02 9 11 100K RsourceI 10 12 1.5 RsinkI 11 13 1.5 D3 12 8 DMOD D4 9 13 DMOD LCC VCC 8 2n LEE VEE 9 2n Lsource 12 SOURCE 1n Lsink 13 SINK 1n G1 8 10 VALUE={1.39e-11*exp((V(7)-V(10))/.0032)*.5*(1+tanh(10*MAX(V(8)-V(7),0)))} G2 11 9 VALUE={1.39e-11*exp((V(11)-V(7))/.0032)*.5*(1-tanh(10*MAX(V(9)-V(7),0)))} .MODEL DMOD D(IS=8p BV=44) .ENDS .SIMULATOR DEFAULT * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE=ZXGD3006 MACROMODEL *DATE=04Feb2015 *ORIGIN=DZSL_DPG_SU *SIMULATOR=DIODES, SIMETRIX and PSPICE *VERSION=1 .SUBCKT ZXGD3006E6Q VCC IN VEE SINK SOURCE LIN IN 6 2n RIN 6 7 1 D1 7 8 DMOD D2 9 7 DMOD RI1 7 8 1000K RI2 9 7 1000K CI1 7 8 5.5p CI2 9 7 5.5p RO1 8 10 100K R02 9 11 100K RsourceI 10 12 1.5 RsinkI 11 13 1.5 D3 12 8 DMOD D4 9 13 DMOD LCC VCC 8 2n LEE VEE 9 2n Lsource 12 SOURCE 1n Lsink 13 SINK 1n G1 8 10 VALUE={1.39e-11*exp((V(7)-V(10))/.0032)*.5*(1+tanh(10*MAX(V(8)-V(7),0)))} G2 11 9 VALUE={1.39e-11*exp((V(11)-V(7))/.0032)*.5*(1-tanh(10*MAX(V(9)-V(7),0)))} .MODEL DMOD D(IS=8p BV=44) .ENDS .SIMULATOR DEFAULT * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Jul2016 *VERSION=1 ** PIN ORDER 1=Vcc 2=IN 3=Vee 4=SINK 5=NC 6=SOURCE .SUBCKT ZXGD3009DY 1 2 3 4 5 6 Q1 10 2 60 N Q2 30 2 40 P L1 1 10 1p L2 3 30 1p L3 4 40 100p L4 6 60 100p .MODEL N NPN(IS=6E-14 BF=500 NF=.98 ISE=1E-14 NE=1.25 ISC=3.3E-14 BR=15 NR=1 NC=1.12 CJE=36.592p VJE=.75 MJE=.37 CJC=9.674p VJC=.5 MJC=.33 VAF=28 IKF=1 RC=.1 RE=.05 NK=.808) .MODEL P PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350 + VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5 + MJC=0.33 TF=8e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Jul2016 *VERSION=1 ** PIN ORDER 1=Vcc 2=IN 3=Vee 4=SINK 5=NC 6=SOURCE .SUBCKT ZXGD3009E6 1 2 3 4 5 6 Q1 10 2 60 N Q2 30 2 40 P L1 1 10 1p L2 3 30 1p L3 4 40 100p L4 6 60 100p .MODEL N NPN(IS=6E-14 BF=500 NF=.98 ISE=1E-14 NE=1.25 ISC=3.3E-14 BR=15 NR=1 NC=1.12 CJE=36.592p VJE=.75 MJE=.37 CJC=9.674p VJC=.5 MJC=.33 VAF=28 IKF=1 RC=.1 RE=.05 NK=.808) .MODEL P PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350 + VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5 + MJC=0.33 TF=8e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL ZXGD3105 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2012 *VERSION=1 .SUBCKT ZXGD3105 1 2 3 4 5 6 7 8 L1 1 11 2n L2 7 12 2n Din 3 4 DMOD1 Rin 3 12 30000 *Dx 3 5 DMOD D1 3 11 DMOD D2 12 3 DMOD Q1 5 3 12 NMOD G1 11 13 VALUE={1.38e-11*(exp((V(30)-V(13))/.0026))} G2 14 12 VALUE={1.38e-11*(exp((V(14)-V(30))/.0026))} R01 11 13 1000000 R02 14 12 1000000 R03 13 8 2 R04 14 8 1.2 D3 8 11 DMOD D4 12 8 DMOD R1 5 30 10 C2 30 12 8p CS 30 8 2p .MODEL DMOD D(IS=8n BV=30) .MODEL DMOD1 D(IS=200E-15 RS=59.7m + CJO=.6p VJ=.42 M=0.36 N=1.35 TT=7n) .MODEL NMOD NPN(IS=1.25E-15 BF=11 NF=1 ISE=6E-16 NE=1.15 CJC=2.56E-12 VJC=.72 MJC=.21 CJE=3.72E-12 VJE=.72 MJE=.24 TR=.1E-9) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL ZXGD3108 version1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20May2016 *VERSION=1 .SUBCKT ZXGD3108 1 2 3 4 5 6 7 8 Gin 12 11 8 2 .1 D1 10 11 DMOD D2 10 12 DMOD Rset 11 12 33.3k TC2=.1m Cset 11 12 1p Rgnd 12 2 1m Sw 14 2 12 11 SMOD Rbias 5 14 1k Cbias 14 2 .8n Rshort1 2 3 10m Rshort2 5 6 10m Q1 5 14 31 npns Q2 5 31 4 npnl Q3 2 31 4 pnpl Q4 2 14 31 pnps .MODEL DMOD D(BV=20) .MODEL SMOD VSWITCH(VOFF=10.5 VON=9.5 ROFF=1meg RON=.5) .MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7 + CJE=1.02E-12 MJE=0.3 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7 + CJE=114E-12 MJE=0.35 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5 + CJE=1.05E-12 MJE=0.2 VJE=0.6 + TF=10E-9 TR=30e-9 .MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6 + CJE=125E-12 MJE=0.5 VJE=1 + TF=10E-9 TR=30e-9 .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL ZXGD3111 version1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20May2016 *VERSION=1 *PIN ORDER 1:GND 2:GND 3:Vcc 4:GATE 5:PGND 6:PGND 7:DRAIN .SUBCKT ZXGD3111 1 2 3 4 5 6 7 Gin 12 11 7 2 .1 D1 10 11 DMOD D2 10 12 DMOD Rset 11 12 33.3k TC2=.1m Cset 11 12 1p Rgnd 12 2 1m Sw 14 2 12 11 SMOD Rbias 3 14 1k Cbias 14 2 .8n Dz 2 14 DMOD1 Rshort1 2 1 10m Rshort2 5 6 10m Q1 3 14 31 npns Q2 3 31 4 npnl Q3 2 31 4 pnpl Q4 2 14 31 pnps .MODEL DMOD D(BV=20) .MODEL DMOD1 D(BV=12) .MODEL SMOD VSWITCH(VOFF=10.5 VON=9.5 ROFF=1meg RON=.5) .MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7 + CJE=1.02E-12 MJE=0.3 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7 + CJE=114E-12 MJE=0.35 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5 + CJE=1.05E-12 MJE=0.2 VJE=0.6 + TF=10E-9 TR=30e-9 .MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6 + CJE=125E-12 MJE=0.5 VJE=1 + TF=10E-9 TR=30e-9 .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL ZXGD3112 version1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20May2016 *VERSION=1 *PIN ORDER 1:GND 2:GND 3:Vcc 4:GATE 5:PGND 6:PGND 7:DRAIN .SUBCKT ZXGD3112 1 2 3 4 5 6 7 Gin 12 11 7 2 .1 D1 10 11 DMOD D2 10 12 DMOD Rset 11 12 33.3k TC2=.1m Cset 11 12 1p Rgnd 12 2 1m Sw 14 2 12 11 SMOD Rbias 3 14 1k Cbias 14 2 .8n Dz 2 14 DMOD1 Rshort1 2 1 10m Rshort2 5 6 10m Q1 3 14 31 npns Q2 3 31 4 npnl Q3 2 31 4 pnpl Q4 2 14 31 pnps .MODEL DMOD D(BV=20) .MODEL DMOD1 D(BV=12) .MODEL SMOD VSWITCH(VOFF=10.5 VON=9.5 ROFF=1meg RON=.5) .MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7 + CJE=1.02E-12 MJE=0.3 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7 + CJE=114E-12 MJE=0.35 VJE=0.7 + TF=1E-9 TR=30e-9 .MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 + BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5 + CJE=1.05E-12 MJE=0.2 VJE=0.6 + TF=10E-9 TR=30e-9 .MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 + BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6 + CJE=125E-12 MJE=0.5 VJE=1 + TF=10E-9 TR=30e-9 .ENDS * (c) 2016 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL **$ENCRYPTED_LIB **$INTERFACE *$ .SUBCKT ZXLD1371_PSPICE GATE ADJ REF GI ISIM VIN PWM SGND STATUS + VAUX SHP PGND FLAG TADJ NC1 NC2 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 394197bedeb77a716f52d5ca6e23dacf5f77689faa8a663fbc39eed45909606b00d3e0b087c73744c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 04f5acd939422ec02fbfcc2b872ff9461d45c8eb53f8a29c749d13634498f34bc9322890ded6647b56be7388bb4ba8853543ca07c959008c54d5980f69aa986e 5316fc9fe4e05facf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 ddf70eae3b592905ac73e51ea6171029b9eabc28f38b49586ae3f463f161071fbfd58a4b12fceb5d00d3e0b087c73744c9f6c53b093b6672f1b3224347ba154c e0bee0f3fadd67246f52d5ca6e23dacf6ae3f463f161071f2da085ac1302fd51478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 b0eb42ca922cce592fbfcc2b872ff94683aceacad20792c7749d13634498f34bc9322890ded6647b05ed049cabd059d7af34d43db6b6477cbc2933d56eb6c3c7 af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 8f10d309634521e5107192c97b3918a9c76dbc50c48fbbe7d0fb8f8ac09713ec478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 717cdf892ff6b6ff26c880f485e2ca3492ebc16da04e46be7de72266a8957c9762d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb c6ada2f6665016dfac73e51ea6171029df13108db75bcac0ec8e4432708a2f10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 605b35877b85eee721377c54379bab5d239bdbe658d21d00044c5edbf77fecb6b03db27a4b23eea8387ddbd4b3ec85993c3ebf3aa31b5c39eb81723a9021625e 2ca24c18cb27721d153e73797dd8d866a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e dff667fce1627b8f36b24b5db985d2d3ce28bcb138548355116fb2ef8f954fae37533a275f2c6d0eb5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 00575617ddd170c91068d23fb1a14817be00a2a37fc213af7f6778186477bbeb7826d86a24e0c932558ae2e6b93c4040672f752658a09f218d5c737683766352 a147194f3a3bf6c0710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 f29d7d98ef0d8ffac4a17b59ca91381df45310c19b6b8ee57017057a427e6410b540685422c11ef9fceb72c6584bab533cf4807158e4909c9d6bedf9d0034ac8 605b35877b85eee721377c54379bab5dcd9f9b0fe66d8ad1b5b85bc0d31aaef583bc4964f97c0bfb1e00d217525559aedad4bb70f534f24c16944157eaac9744 a2faec34d68cdd2af13ee61e90b65ef18ce113ea01486d742446811279bcfdca7e4eff80f489c700d80f09fa99fcdc9f31ff87f86ef7d8025ac6c13a39cffff7 64a2af3d08b8c3fbe71f71e187584171b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962dd61e0a440bad77e3138b871d3d163c946 273ef0efd9cac693c295486b1819e032f45310c19b6b8ee57017057a427e6410b540685422c11ef9f78e3835f7dcf08337b2d2e15ad7f2468671325e6f4b6b25 6422a9133f078ed399298f7cd44d061d706b807646b803717017057a427e6410b540685422c11ef93063c3bb852fe4d2fe14e8ed893f87905d43534984e52420 2579318862ec410f5268f2b9f86a0eca858728efae680901a23477990359ea58c64639ef522b82dbe7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 f29d7d98ef0d8ffab390595cafb1ab9635b229f6ed36cf79efe06c4f9b313c77dbc3554236bba2721c0530388a0d45f3f64c4168815a7f58b9ec58759fbaecf9 44e335dab141105980b07acdfe1a6318184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb ecc3810338d4a815ec85f36e56eb5e07f45310c19b6b8ee57017057a427e6410ce3e74f18b11c63edea2f49989a93410184dc1300cea2a136b276ab17ad27652 605b35877b85eee721377c54379bab5deb87848776396383b5b85bc0d31aaef5c78955b2f9a9a77ca7acfc5f2315b7c44c49b18e65b2012511d006434ff70a7c 2579318862ec410f5268f2b9f86a0eca858728efae6809018683b141dcb3272b7ae82484816be00fb5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 605b35877b85eee721377c54379bab5dcc0121b5e20e20767e2db9a6f9c8f569a3453ba7982d296def7dd173ebafc8a5efe06c4f9b313c777a5f555c7f36bc06 55f7ebc1844b945cc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 dff667fce1627b8f36b24b5db985d2d3ca919d09a48d33e1b19c9f724420bb21024a2e9187f5d113e73070a45f1d549ca0c7a89b875d76a7668ff86ff0a77892 273ef0efd9cac693699b83783a230135f45310c19b6b8ee57017057a427e6410b15a98c80c85bdd8834492d15d72f82c760b7acfc94bff32bd6e0240e530e0d3 00575617ddd170c977da2069621c0870be00a2a37fc213af7f6778186477bbeb9b7fc6a7cb92def0ea7d4f030068283373d9dc50e4e85c45abb485c8ac7a39ac 00575617ddd170c93a6d68c1db088061be00a2a37fc213af7f6778186477bbebe3abc915180b0fc75a90baf5cf07376f49bcb2e9b7241eb49d6bedf9d0034ac8 5dde899679de79ab1b335ff66691221544e30ee031766bfac90827f4e9cf024b821d3ad19a17fc5962d766f77596a54bf588045849eceb90e1051d295f61418a 317f1bcb1e5ac862ac73e51ea61710293497978ed7181356a099cec494ae8989f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 7b300a002f2d8ddd218ee09e41104590e28b1eaee7cc8472753c64a4a951701a9238c7ba345aa441c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 b9ed3e04d2a793293fe9a17f99afa94395e943ccd8868a6ae93c8c7b51168b14478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 f1b71296a16c9ee01b335ff66691221512ea7294e684b839f3c4e72344563a843b250a80e39602b5042f0c0c78bb0deb184dc1300cea2a136b276ab17ad27652 23ee73d6065f3641d811871cc3622e4a019b8717068e3d443f21a179b2be58baef1d7357d3c4e2f3644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 2c7f46f84591bc12e2ad7048ed9193b1523b2604a68e8ef9fdf5f62657ccba9b2dc8ed9cc96ddaab24fdfd9bb2e10b07a0c7a89b875d76a7668ff86ff0a77892 857620ce20ef86cb26c880f485e2ca3415329f00962841785a4c41089daca73e787784bc593e995d23b782b3d6a37df1e7eefa795927f22c7d5ecccba7838ea4 8807bf206d8a4bf4da90698ba1ee0b1344e30ee031766bfa2eb33e7d0c66effdc4263047304fc101abbf8da1f96d2fb2492a61aa0d75bc53f41f2ac565d1fd58 d36d26370afc449b1fc67ec68dbc352ea826917222a64646f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 f197831ab997cb511b335ff666912215962084b4cabaea50c0996ee0a6b29beec9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 71dbbe87e53e082f599bf13f0371d5b4fda72f5818c81bf49e91cddcc46315d65ed2fe27f6c34366691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 e8686e014b15db761b335ff6669122159c3be3c559456c162f7290d7f191b8ae23b782b3d6a37df1e7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 c858d814c56a2bcc769be4ce041f188824046311950bf77c4ba887e5e5417704abbf8da1f96d2fb2492a61aa0d75bc5381d5360d0e44f50c5d43534984e52420 48a94d11d238250f3e182210b1d9c2bc0dc94f7d1fc62090e213edf528fee6b2300b06d6b098e56a7a72378188149f25691018eed3b49c36df42c068afe98c8a 9e5134779ded2111f45310c19b6b8ee512d693d8957db81b478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 e72ff3e7fc7190cdda90698ba1ee0b136ace929a007d96c44ba887e5e5417704abbf8da1f96d2fb2492a61aa0d75bc5363ed35b1266e36425d43534984e52420 f58ffbed3f217484706b807646b80371895d05bc59882af8f1b8d790cb2e41c9faca85d0862a74fbfc528ba36843793b0fa984f27f78bccf7d4d396707233756 4cf294edf7e0961f9b08e82f0908ea3a184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 4a2e92973c32fd12551cc969959c56b127056d71145457d5fa52237fdde26b44691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 6f23563494b56938706b807646b8037132122f815f7bf45c8e927edd2d745704be7b72e16c425c0c78974fa8c5970bd3128fa59261fa1a65f44496155f03ed4f 2a76c18f665e8c270dbeca54fe4a6fa68c81757d6b17a69f9f7df7e1d853713719fc61b223c11fd91b03c3c8b1210eb1c9f6c53b093b6672f1b3224347ba154c 1fcbc249eb94715326c880f485e2ca340639c092da8a0ddddc87d8f5e8e39da462d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 52ba738fba12eb4a1b335ff6669122152ca8047c7957b30eae1e05fddac936fca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c2a9ba28f5e45e265 f80a395284a571112fbfcc2b872ff94677ddc6f43cf11494749d13634498f34bc9322890ded6647b913601db0b53db113543ca07c959008c6f43b879c715b844 0db7e72d6e369fe1691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced 340902c1590d2246cbf62b4d3dcda7184aed8b565a5e13815c9e084edd7d2158f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 09a2b761cdd63986d58d21bd311ea6ba2716e67bb37c739248a22ba84875dab5e3e5946109ab96442be4d4793f1a270b2bdc2471723c531b74fb7cf2e7c9f235 32cd76a2a36328a99aa9a9248f306fbf65cef533b34422d3d4b905c33e8bae272576175eff3c1c5ab5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 09a2b761cdd63986d58d21bd311ea6ba9f50c449b546348c48a22ba84875dab5e3e5946109ab9644d2f28a5c4bc363c766eaeb9fc4cc8ae125657ebd83de6526 14d9ecaf67b8c94ac3322ae60df680c2b6cb8b57da5c237d3a9cdabdca00b010bdc21b64c436efa17cb5783fbf51f543f588045849eceb90e1051d295f61418a 95216fad1e8e9329e73070a45f1d549ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 09a2b761cdd63986d58d21bd311ea6ba0fa4ea595ab98ca05b6db4b5a524f0cfc24c449b5177ec438492e52ca9907137d45987aa526f7ebcaefc2cbd1904f036 8ae1ad83327b81dec5446a5920f1d318aa11a96fd77a05cab74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 21cb6a29d4b0b30d21ba0642d7d35b3451ffdabf74bf3f4cf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 4cb05053dd12b0f521ba0642d7d35b340c9f3156902d2775f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 09a2b761cdd639868eee1ee26f081f21957037c396f796b5025af90ddce02ede557891869bc2e855803fff23a4e2a281ce5ec34e6f8ad1ca20e65e1717a0b297 c35972971bda6cbfc2356fa0b0fe3ea9f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 09a2b761cdd639868eee1ee26f081f215fdb5cf0a0117bb6025af90ddce02ede557891869bc2e8553a1a9b7f4a1b1ea3ce5ec34e6f8ad1ca7f4fa8c50191d90c 021132bb3fd82585f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 09a2b761cdd63986809e63d19e808c40706b807646b803719f37e7a110c0d30f8492e52ca9907137691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 05b5f1398a5d6f6906f29896cb00af16e3e5946109ab96448a6d0d3edb9c296d3b698759e0f6968715cde71e5a76569bc2356fa0b0fe3ea96004e157994bc9bf 09a2b761cdd6398671d94cdb4243f500706b807646b80371aa3deeb51b78df108ae1ad83327b81ded2bbaa26aad6c6147f96a94c9a957a0c5d43534984e52420 05b5f1398a5d6f6938e5202811de8b229aa9a9248f306fbfa019b886ca2946c45ec35ee69717b5a5974781ad152f7972184dc1300cea2a136b276ab17ad27652 5c2e262d493b312ff73e0c5051b95e15e503df2c2a48623568d4c1b330b1e1fa62d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb b090b65fdd16a27f1b335ff66691221511253b9116fca4b5cc818c2e64e2441d3c991a04052eba44644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 39b56735282d89731b335ff6669122156b74fd3a75af1db9b3eff0053075038b82b03c4529a3797d478a87bc5b8e6cf9691018eed3b49c36df42c068afe98c8a e513bba6d3228b87ac73e51ea6171029b9a376387dcea33ea1c0f782a9dccaf9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 b0fb847a3b385fda1b335ff66691221528bb17bf747c349a7bf91ca1a5006a10f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 a9174ed1bf108f9a0c5c216a3038c78c2ae141f64a46e45d8588cdf916f86d19e213edf528fee6b2300b06d6b098e56a3950d9f59cc9528fd38aff4e12555a5d 282e8027f6fd021a744533db3bdc064cd7dfcfdb598aef9d554e6be04a5ec8e754cc636c47659e96faca85d0862a74fb4674009031596e3afd5baaf91a42e7d3 ce28372646c1b72b8f8029c76dd5a72b644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 02673b7763e121d2184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 7c9acabd26c54e03f6a2b547dc976ba066c88eeb6c99df5da6f1ddb48cdca4178d1722fa3b58496691ecad6459b78f8ea076e3216a8b20ce62d766f77596a54b 7c9acabd26c54e03bf230db17611f82f66c88eeb6c99df5dc0db4b7a44834d678d1722fa3b584966c1119d53e95a4af64ebedf1affe729adabb485c8ac7a39ac 36beba41d0d291a4b1cc8ce9c0a7c4dbcd30ef1298e2828f2ca13e67bcc94ff2749d13634498f34b2228f4976daf1309c35972971bda6cbf82d021902886a9e0 7c9acabd26c54e03b585b96681e0ca9b66c88eeb6c99df5d836ccb36c8e634738d1722fa3b584966e5cfc863a8a501d624be77f172ebdc51bd6e0240e530e0d3 282e8027f6fd021a44f91394b9d9e846d7dfcfdb598aef9dd2820111558128219befd31f50da7206fe14e8ed893f8790c9f6c53b093b6672f1b3224347ba154c b895f158934e88384674009031596e3ae7b47cf3a9353d48d6c1365d95c11ec227a93decc2d57179c1fc488386db32b8e9fdfc8a753de111d38aff4e12555a5d 9479dc5c320af2ec1aed393b8b55339421a9aca16c78487ddfb89fd4996a844c8d1722fa3b584966d11416a3e67abd4b6d94ac99831e831f122d19e668be3062 547fa7df049edd5bd3ed529e2f03bd0da0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 7c9acabd26c54e03dca29065f7b4a684eac8453836f1167d9fa4c4bc97a88581e2bb5bfeace0dc4a209a5091d0afa22fbc9ba1249b27d252bd6e0240e530e0d3 b4dba295799dbf1bb585b96681e0ca9b66c88eeb6c99df5ddfb89fd4996a844c9e4129bde4083afbf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 282e8027f6fd021a6263a80a123a82bfd7dfcfdb598aef9dd09f9d772f43ebef8492e52ca99071376cc173f11f5b8563f5ad3ad78240944d770dbf5b363fa50b 52d178a251a6b6d5a778ba06ffb6481ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 66848ab3646ea9277df90e6847038987295d7e616dd35350af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 b4dba295799dbf1bcd9f9b0fe66d8ad166c88eeb6c99df5d74a45d3e091b7fad9dd87a2d3e5280a11de333fbd2e0f35df716375b8c71d2ca2a84cfa93f6086c1 9479dc5c320af2ec5c89cd247067d79021a9aca16c78487d112a23f56123a9e48d1722fa3b584966fc8cbd0336a453d86d94ac99831e831f122d19e668be3062 547fa7df049edd5b7c6a05e67fd634eea0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e da33f0d11a9f0f4ebf230db17611f82f66c88eeb6c99df5de7b47cf3a9353d4832a63025bcdcc99437b2d2e15ad7f246042f0c0c78bb0deb16944157eaac9744 36beba41d0d291a4df9ebaf9f2a35d54cd30ef1298e2828f7df90e6847038987e4cdac1c8a1d1b266e3f0899c50425cf107598ff023e5e6fe2ebc0dd60167d43 36258f891834800beb87848776396383ee894940744d7fd976fe71021a80bf2f2e23ba67bb505870b579c1d0cc3dc7d3644126c9831a96bde848d5f4c074f39d da33f0d11a9f0f4eeb8784877639638366c88eeb6c99df5d58ad1114986fcd033d34ea0a4263fbc88128d567d8fde99900d3e0b087c737445d43534984e52420 9479dc5c320af2eccfee2d3418fdb57721a9aca16c78487d7bdec82a4b7b53f08d1722fa3b584966e34cb4739f0740126d94ac99831e831f122d19e668be3062 547fa7df049edd5be96826b1b8137c4aa0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 9479dc5c320af2ecdd40236d4888ed8d21a9aca16c78487dba5bfaa11384a59f8d1722fa3b58496619783d2f8036fcd56d94ac99831e831f122d19e668be3062 547fa7df049edd5bb41c954d84327076a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 282e8027f6fd021a05f06f9213ce83bad7dfcfdb598aef9d1257635b7fb4c541ce5ec34e6f8ad1cafb3114ec070b43c09abc853f63b3fb5a9aeb1dbca0cd0241 7bd9089c90910d476111a6a2967a6c58691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 9479dc5c320af2ec34d8be222b1876f721a9aca16c78487d4f7687ea86dbe3318d1722fa3b584966e34cb4739f0740126d94ac99831e831f122d19e668be3062 547fa7df049edd5b27d9f7e5287cba2ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e da33f0d11a9f0f4ec12e63f53fc8b6c766c88eeb6c99df5d112a23f56123a9e48d1722fa3b584966a75b4546146326223c3f33a379f0af8a62d766f77596a54b 282e8027f6fd021af5687491f31f2924d7dfcfdb598aef9daea69d63dd36534320f664a3ff7b4a04faca85d0862a74fb4674009031596e3afd5baaf91a42e7d3 ce28372646c1b72b743bf58d1db148a3644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 02673b7763e121d2184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 45bb615a0113a2d76295f13f271e3dd4f45310c19b6b8ee5602264da8f44928d4c49b18e65b20125e7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 32cd76a2a36328a99889c62aee5fc834c6bc33b4ab296cf04d4c212f6c1abf84cf5d0219e0df7a9d7793c602b9feeb0dec7850cb5e2600ad9c7a4bc0de56f663 36258f891834800bcd9f9b0fe66d8ad1ee894940744d7fd976fe71021a80bf2f87ba5971c1666c6321a9aca16c78487d836ccb36c8e63473789bb4c149c0f7d2 36258f891834800b239bdbe658d21d0066c88eeb6c99df5d4f7687ea86dbe3318d1722fa3b58496619783d2f8036fcd59889c62aee5fc834ce6a500a0bc3e23b 400e963555b1a2d2dad4b7980b83d60ce7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b 53a47ce20eea766578777e4c883822d7496ee1101b7a39424ec484d93e85716ec50ef93b4e08741af588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 282e8027f6fd021a95a9d5006d1ac9c1d7dfcfdb598aef9d83676253d12347c501de569537f728dffaca85d0862a74fbf42a59751c2d9c74c8871d0203ef020b 9c696fb13148990c8675a01b2db95be7c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 da33f0d11a9f0f4ebc27f931268b406166c88eeb6c99df5d250025f01b12eac228962c68c37beadeed013b7ba2d18b82478a87bc5b8e6cf9d38aff4e12555a5d da33f0d11a9f0f4eb585b96681e0ca9b66c88eeb6c99df5d209a5091d0afa22fd267191e106d0b0d8387f45e647e26ceef1d7357d3c4e2f39d6bedf9d0034ac8 65f8ec3b931d45fecd9f9b0fe66d8ad166c88eeb6c99df5d836ccb36c8e634738d1722fa3b584966e5cfc863a8a501d66b895da7740b2625d38aff4e12555a5d da33f0d11a9f0f4ecc0121b5e20e207666c88eeb6c99df5d942409553266e8b316d68c73f74bc5565c8d68af7fe2e960609e19a3b1330370e89729e5d38ef58f 9479dc5c320af2ece68811ece2528fc321a9aca16c78487d8b3909b9b1ee98c48d1722fa3b584966fc8cbd0336a453d86d94ac99831e831f122d19e668be3062 547fa7df049edd5bd1e514cf9ee05ca5a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 81bc0cb7c12452441b335ff666912215062777163355bd154f60af2351f95502c051d21af37637adf716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 abea470061b4cf4674c94f93c383e2578803136c44fdf03c12ea7294e684b8397b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 7aff1ed175018062cbf62b4d3dcda71850495b21047dc1007a2bb3bc46c04b4e478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 a16523cb4c600880ac73e51ea6171029725174985eb3b1d34d745b560a9864aa2eab8f59404e32fbbfc3976bee98b06d691018eed3b49c36df42c068afe98c8a 900387b6be7bb99274c94f93c383e257d68ff0e069060e91ef1d7357d3c4e2f3644126c9831a96bdb74feb6ff8076c794d22c850cafe6d8869a81fde624533ad 32c994efcc2d922e0abfc569c2f155647ea6ad46ecf15209bca66beeb277b1607b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 d8f5a2ccd87b60eeac73e51ea6171029977c9ed6cdc69f7c55ee2ca7818ff4e6ffd414095be51912644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 0abb8c42c110d7c574c94f93c383e257b06f7b2a5221d6a1cdc50eb41b28b6da1d28299200febf22f32a46da3bd46a365d87510856e45788d06855f06d6f53fd 75430035d97ed48aac73e51ea61710292f63ba7cec69a5ae92ebc16da04e46beffd414095be51912644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 98b5f0d56fa74586769be4ce041f18881b695623e8d2ec72fc7f201294a05a1d28b5c8cbdfe3537fd7059c8c42854956483cf72d1898804474fb7cf2e7c9f235 f0141b5f35912e420abfc569c2f155647ea6ad46ecf15209cfcbccac057ce9367b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 0382627c5bd012d40abfc569c2f1556449ab06bccf3c5e3aa52c5d0900251b18f29bae4b68f7bfb2a10c11dc3b762f9f6a55ec42853e357f743ff23adc1a84eb 2a0dde369b0e03c9ac73e51ea6171029a294b4c9b4499e412f30647cd4a074f8cc0a4cfd13354a98646fb8d77d1a9bd0a0c7a89b875d76a7668ff86ff0a77892 b052355e65d40bda6072bbb927e75d221f5a36c0cfa2e93a622e6bb14f828842d5842d53d11b6659a54dd50435f134f9bfe7aa56cbb7750016944157eaac9744 8bf314ab8c0348996072bbb927e75d2233712e677bf821410e88ff585c7721b717db01c01a85b031d741aae16bf64f713db07fb45d793ed8809b758273603f84 afe317ae10e98155dffad4255220698bbbd6848a4bed6ce75cdcae49952477491bbe45b2adb70fc37a5aaa106641e9738c2b08ff5cc148ae11d006434ff70a7c a34eb0be5ea600af74c94f93c383e257d0e476fa0d4f54a90aa9758bb879ff7eee09f8451cbe1231710f626c2faf14a6f716375b8c71d2ca2a84cfa93f6086c1 e9dd452c4e6cfebeac73e51ea617102936c315db1f9d8b9bec8e4432708a2f10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 a3d26799f30d8e0d27881184d92232d68bb760bf7903e92ebb8309e553dbf02da9f8c600a5632a411d155fb90c9a9bd766eaeb9fc4cc8ae11a4ba722c03153cc 747e4f2a6405d9546d2aa86b77a26c95691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 3e2f6d3b6fa1f79ec9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 dcfdab3db4e32d43ede29d0f5869fc33706b807646b803717f4022ad17ec791a661a51fa4c6b374154a3c6ec78dbb3aba9f8c600a5632a41dda7d25602215933 cc29c56aedd5408745b0476b0b2677a2450cb01944621787646fb8d77d1a9bd0a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c2a9ba28f5e45e265 a3d26799f30d8e0d27881184d92232d6f5f9ed6312b8b794bb8309e553dbf02da9f8c600a5632a412ab53c80251d77034c49b18e65b2012511d006434ff70a7c 32cd76a2a36328a970c06ad4469b5f94cebdfdad9ec516f4887ff07020def09bc1fb5ea162ffd514e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 dcfdab3db4e32d433bf41dbcfedd1a73706b807646b803717f4022ad17ec791a962774806c3702bc70c06ad4469b5f94312fa97e331c1da84ae99547937d63c8 661a51fa4c6b3741de4c8491ec5adb9e644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd a3d26799f30d8e0d27881184d92232d69555c9de400e3ff4bb8309e553dbf02d2552b09b2698b2f7faca85d0862a74fb691018eed3b49c36df42c068afe98c8a 5481192eeae2d9bcb37e8d7bc524479260738008e3ec23e9bd64c1cf62f7de1ee9cecb35b9656da53c43768853245e2f3c7d75eb5aa570c18f03faff22254705 6e8b426636593381d9cb531c84b2e78e691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 94c296d774d16dc6029d261fdb11face706b807646b803717f4022ad17ec791a61c0f368e65895e727a7680140b18b02a9f8c600a5632a4124bb2947519915e1 6b895da7740b2625691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d6f7a9cb3a3aa8fd3bbb8309e553dbf02da9f8c600a5632a41d43d8e2b52dc60dffaca85d0862a74fba0d09017c0a7e6e3 cbac94568cb7ea80af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb dcfdab3db4e32d43a33cd2cacf2a506c706b807646b803717f4022ad17ec791aad422042d90c20ff70c06ad4469b5f94e3916bcf3d4f3b094ae99547937d63c8 661a51fa4c6b3741765675393dc7d125644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd dcfdab3db4e32d43bba88ce0a19c8c96bb8309e553dbf02da9f8c600a5632a411b4f7fa9a4b8e3535071025688454c9ccbea7112d78cac1e41a05de3116e9b24 cfa43262ca04397ebba88ce0a19c8c96644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd dcfdab3db4e32d43ede07d0c58d4f032706b807646b803717f4022ad17ec791abca82e895767d0d27f4022ad17ec791ac2725da9eb2b53c3ea4f4ffe9d39f1af a9f8c600a5632a4193ad7f2331f679c039859341766fc92cb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd e8ac5e09ea758be7a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a039872532af236d9d172b57b6cedb7a9d79e dcfdab3db4e32d43f260bf685f02b461706b807646b803717f4022ad17ec791a42584466a0744c915286be7e40403390726a141610f9030fcebceff5d226dc59 5ed2fe27f6c34366691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d6718e8ffade3a3c48bb8309e553dbf02da9f8c600a5632a41a2551ee6b7ec08c82bdc2471723c531b74fb7cf2e7c9f235 32cd76a2a36328a970c06ad4469b5f94b06ce489a5ca8bc762c70e641415368ae382e6191d1e3e368490b79e7682309954c51e02474204001668843a96fba0b1 70c06ad4469b5f94563cdd7e1d34ebd6233b9393f3163918e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a3323cc4f3a5d7e023 aa3996e99201019ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 8b85e4e539255337f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 73f5336ad93df892b5f1c17ee7956303f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 a13c3ebdebf2dda89f946f657c75313a706b807646b80371f883903d081a702445b0476b0b2677a2835e233e602f4a1ea95eab34c46af31de89729e5d38ef58f 1c21120900cc4a8e36396189a293dfcd706b807646b803717f4022ad17ec791a42584466a0744c91e12e7b2be99df4b145b0476b0b2677a2858904c65dd9fcbe ce133616d118868f7b4ac1d86b005a10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 0418cc75e3d7cf68710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 a3d26799f30d8e0d27881184d92232d6528864a47f84deb1bb8309e553dbf02da9f8c600a5632a415f733ff96338b1f2dad4bb70f534f24c16944157eaac9744 32cd76a2a36328a970c06ad4469b5f942787d48592327eee7e9f11aea7261d3fc1fb5ea162ffd514e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 94c296d774d16dc61a3f0583e1a3bd76706b807646b803717f4022ad17ec791a61c0f368e65895e764c58fec2fc42cd7a9f8c600a5632a41c4ca8063797fb61b 6b895da7740b2625691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d674efa137fe2e0c89bb8309e553dbf02da9f8c600a5632a413741f88c4d16baa8ce5ec34e6f8ad1ca1cc1a996f7fda727 3855efdebcb13ff95d7d82e5a16ed00f644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd be933631531f9659e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb937b7b413a3c0865e2daf092be8c923c4 1c21120900cc4a8e19f3f50aa9dc900f706b807646b803717f4022ad17ec791a42584466a0744c915286be7e4040339045b0476b0b2677a2f7ba82e1f913d254 ce133616d118868f7b4ac1d86b005a10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 0418cc75e3d7cf68710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 dcfdab3db4e32d43d10aca187e10ee8f706b807646b803717f4022ad17ec791a7fc190a94cff1584c4fe171c4aa376b5a9f8c600a5632a41d45c707ab17d8b3b 2994a828cfcb8a945699c5db1d4fd476e847dda77d5f9443b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd d49c10eabba409d0691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a13c3ebdebf2dda881d04920058e3784706b807646b80371f883903d081a702445b0476b0b2677a2367114db4850319ea95eab34c46af31de89729e5d38ef58f a3d26799f30d8e0d27881184d92232d60fa4ea595ab98ca0deaba362d68b5afa8490b79e76823099b616acb3afc2463ed3b99b01fef3c64478e91940a8e16688 7793f45490075ab3184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 2a6720d0591cca0540f05819e599c2c0f44496155f03ed4ff588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 a3d26799f30d8e0d27881184d92232d6b5c9d0c1558cfdd3bb8309e553dbf02da9f8c600a5632a41737375a8f10d4240faca85d0862a74fb1e10c57f3fa5c4ab c8fe38984326176d6d35d8485846d699e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b a13c3ebdebf2dda8dab4c24b55761cda706b807646b80371f883903d081a70248490b79e7682309988d781a019b79b2cf357d2495314aea2abb485c8ac7a39ac 1c21120900cc4a8eb4ce929101f95640a665d0fac02ce03ed9e82c4170fcde6c7c9c7b2e8cc681a533f224eaf10e8b80b37e8d7bc52447928c38e2b886ad00f4 2c671ee0eeadba6424fdfd9bb2e10b07a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 099a86bb88e9bfe31aabf11df8bc7d16d80baa145e5a06b5b0daf6fdf32567c9447da73140e1fc0c72d03a382a5bfff6644126c9831a96bde848d5f4c074f39d 81a9746d786d11d6818d73f79dee5cb4f418b0d160a3681f3dd6b421a8a3725817181a2338ab2aebfaea4b98a48f84e01933952b4dcad44ce0c8f92b9e893480 0805c9bc4a8c6e821b335ff666912215dfcb0cac625c1873016f27e7fe377c06dce40a334853b6026620d3f6c560089e644126c9831a96bde848d5f4c074f39d 224fe9df4b4ef4f274c94f93c383e25734ea5a4105092647687fb7a3cd2ce4a4c841ee37f63fbd9f789bb4c149c0f7d2f588045849eceb90e1051d295f61418a a1642ab168aedbca706b807646b80371cff3aa4dfc172ba9fe8065cdb5f5f8ce9d8a6e2e9f780fbd77f292f81f948d5c30c576d2a5a01b7b87e4581c8c748cc7 17cb17e37c3b5d6d55136b92d0559ec4e71f71e187584171b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 2dbdd1f19d21f2c6f45310c19b6b8ee5cdbea1dc33dbc9f7478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 e32412d8e97ecf0cf45310c19b6b8ee59a410bc651fe35dc62d766f77596a54bf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 dbf12f0360092c452fbfcc2b872ff946ed93a0256a6d844d749d13634498f34bc9322890ded6647b3e79fe16148a605c0bf1a37a93ab80b462b84e5bac7fe806 012c1a3f018cd4280f4d3610e546ee8e184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb cc1384a8203fb2628cf29811b0e6da3536fb420f5a067a1ef588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 846dad09021724e51b335ff66691221555e91b4e96b9929fcffa2bb36a30977a184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 240cf6a83072ff1a38a199ba1268a68172d2a53fbeaf00843cafa1326cfe18744842ef87c436514df49fb174d085ee41608e5066341ff6bd6004e157994bc9bf c1dd9c389b868458e0c9cc74d563e9795556ffb9d7663e42817afbf1a1467aacfeff6bfa8393f3f8f8c60dfea3fcb448617d098114966bf404fdd277fd95ba23 2b1f6b713203d99458b58148317651d2f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 42cad0d02e943b3cf45310c19b6b8ee547f0b089656f266e62d766f77596a54bf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 0d5aef5328a6b0bcac73e51ea6171029067f4902092fb36aa1b7be63766c6afbca844e5556e86be4a0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 2a3fd364408caf246f52d5ca6e23dacfc8fb14f6ca5b8e2bd388e23ae3aabe19e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a198671645a8a8b509 $CDNENCFINISH .ENDS ZXLD1371_PSPICE *$ .subckt ZXLD1371_FOR_HIERARCHY_S7 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf ca116cfd9f503f5a31820e631d1d1d74bc43870b2068c893691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 22fa704315324fee6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44b8257e7c370c44b80ffb76e2ddf4497b2661590815226ffb5d0d2970852fcd9175a72dcf08b05ada72e8a5ba6eb8ba83 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S7 *$ .subckt ZXLD1371_FOR_HIERARCHY_S4 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf cca5ca7cd3bb954631820e631d1d1d743397604f987b60be691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f c89815736fd06a736f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44d3c3547c91af769e0ffb76e2ddf4497b658b10ab5642c9074b56e07cb2a0a4fbe2da13bf6ad1ec6e8a8fe36961566219 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S4 *$ .subckt ZXLD1371_FOR_HIERARCHY_S1 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 44f117741689d59131820e631d1d1d749e35700c7913e939691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 3c76beba9b808c126f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e447b3ba2fd65dbf9050ffb76e2ddf4497b2661590815226ffb5b32e22ee2762aa4de796a07e247501c3e91162e7d1bf20b $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S1 *$ .subckt ZXLD1371_FOR_HIERARCHY_S5 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf a41eff5afcadbe0431820e631d1d1d74cce714c3daebb9ef691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 0d00147a4ec8159a6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e444ffca53f33c7306d0ffb76e2ddf4497b2661590815226ffb5b32e22ee2762aa4de796a07e247501c3e91162e7d1bf20b $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S5 *$ .subckt ZXLD1371_FOR_HIERARCHY_S9 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 0d4fba81348870d631820e631d1d1d74525a947d4222b598691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 7e9baaa9719bd1f96f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44ccbbb1088960694e0ffb76e2ddf4497b56602f79b0c467cddacf708331606702dd351453c45c7fd75065ec6d2c8c5479 dc224b6b76a2bc94c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S9 *$ .subckt FREQ_HYS_CONTROL_freq_S5 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074bc27f931268b4061ffb40d9244a39c7b6a68ac505a5ecff2c88548d8e960e4b4f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd227765b42d27caeee0fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e449700bce0c7d12200b469a8d685c038374bf43f00b3546d6cc905474b9732df37ff411e42e94343f8a5ee8a3eda0c234c 768e04b30687cfb2f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S5 *$ .subckt FREQ_HYS_CONTROL_freq_S4 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074cc0121b5e20e2076ffb40d9244a39c7b6a68ac505a5ecff253d628d3aa8f23f0f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd20eac5929827abc620fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e444bc03f093be0dc18b469a8d685c0383732325ad26af3c92db16935f5527df49e8f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S4 *$ .subckt FREQ_HYS_CONTROL_freq_S2 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074239bdbe658d21d00ffb40d9244a39c7b6a68ac505a5ecff2490cb4e483ee24adf716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd23a40f0eb405719560fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e440322e8d4ef436925b469a8d685c038370cf9f34ef7439c7d45316724feefc5c28f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S2 *$ .subckt FREQ_HYS_CONTROL_freq_S7 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074bf230db17611f82fffb40d9244a39c7b6a68ac505a5ecff233cad0128b74623ff716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd2fae8f259c6c39e8a0fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e44f29f1bd798b90240b469a8d685c038374bf43f00b3546d6cecd4cdb03700be1f0fce1330368f375ef1481883b3c827f1 5fe9ab614b8532c6691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S7 *$ .subckt FREQ_HYS_CONTROL_freq_S6 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074c12e63f53fc8b6c7ffb40d9244a39c7b6a68ac505a5ecff27ac7164c6d09e590f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd23284dbb5b24063b50fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e4451f6f2e2c182f951b469a8d685c0383732325ad26af3c92db16935f5527df49e8f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S6 *$ .subckt FREQ_HYS_CONTROL_freq_S3 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074eb87848776396383ffb40d9244a39c7b6a68ac505a5ecff223ed7a9eec21b7f2f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd211ae75f02889d2920fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e443f4a0cd3d8ecd961b469a8d685c038370cf9f34ef7439c7d45316724feefc5c28f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S3 *$ .subckt ZXLD1371_FOR_HIERARCHY_S3 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 49437a5c2c000e5531820e631d1d1d7451c16968e1146dc5691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 196545b3a77859896f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e449fca2d09a1602b870ffb76e2ddf4497b2661590815226ffb5d0d2970852fcd91e7e145aac8e3e7699d637f5014d15567 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S3 *$ .subckt ZXLD1371_FOR_HIERARCHY_S2 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf c21144fd15b2c61331820e631d1d1d7423f284e2e346bfb8691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f e07b7a6acd4bf43c6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44eff574bcdcb677aa0ffb76e2ddf4497b2661590815226ffb954d83117570d624bedd4f0e0429e49f7c4bbf5b95fbb5a2 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S2 *$ .subckt ZXLD1371_FOR_HIERARCHY_S8 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 48cad54cbc66f42d31820e631d1d1d740e2409c315f54dec691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f e65d04c3f5d7c4236f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44a0cccacb04419cb30ffb76e2ddf4497bde068206158253e41090d0879c58eb702947f67be37eddb2d38aff4e12555a5d $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S8 *$ .subckt FLAG_AND_STATUS_STATUS_FLAG_S1 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf cfa43262ca04397ebba88ce0a19c8c96706b807646b80371180f9852cfb962b0a383dc18dcb615b7bba88ce0a19c8c96691018eed3b49c36df42c068afe98c8a 2075146148d4b5070b96a7f211b663c6cd9f9b0fe66d8ad19fdd4d3bdfe20cf0691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 1e7e75f62a07f7b1bbcb463bf6330e4470c06ad4469b5f947053772909f75e89fb3b1a8334015d62d1c429fd2f3b2883fd2de4c0061ef81a9adc56f03a8d243c 56d61c3bc288fdfab3ae07e46b54f215a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e $CDNENCFINISH .ends FLAG_AND_STATUS_STATUS_FLAG_S1 *$ .SUBCKT COMPARATOR IN+ IN- OUT PARAMS: DELAY=10n $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f13695a267d63dfaeb5708e23ac33f007982c30b6978092afa172cac7b9698ef38691018eed3b49c36df42c068afe98c8a 16288721619f9c8b73e70156d3cd9e32ba7f00f779fc266112e28b77a3176d96f3acf00b7a00a5d9a0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 6a7043c1c76bf8115801d29f353ff668c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS COMPARATOR *$ .SUBCKT AND_2 A B Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df167b1d69fd012a0368265dc80b7e0d46e0117c329126d1ef51031098785dc58b6c2356fa0b0fe3ea96004e157994bc9bf 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS AND_2 *$ .SUBCKT AND_3 A B C Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7f5b09636c3bdb66729bb98c81884b404e9ab688292ff1c0c1ccd6f3cde728099eb71d6b06b8085e19 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS AND_3 *$ .SUBCKT OR_2 A B Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7fe0ca60defdf7d1449bb98c81884b404e3e10a24a415fea9ce71f71e187584171e848d5f4c074f39d 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS OR_2 *$ .SUBCKT OR_3 A B C Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7fe0ca60defdf7d1449bb98c81884b404e540b35c06706fc31ccd6f3cde728099eb71d6b06b8085e19 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS OR_3 *$ .SUBCKT BUFFER IN OUT $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf244656e81b84a3fc43e10a24a415fea9ce71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811fa1447639072c48ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS BUFFER *$ .SUBCKT BUFFER_DELAY IN OUT PARAMS: DELAY=10n $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf f8547e868ffe926371707ca6c7cdc2c0db8456fb9fc0e60ca344273ac7c053539894c1140acaefeda0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 6a3db1adc01f2d0736806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962dd61e0a440bad77e3138b871d3d163c946 d60bc892fb1b4da34d01e0f129090a713dfc58e2232c84d7e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a3323cc4f3a5d7e023 f11d6a2c6927773428f84a1a2d7ca9633291f8ae48f5b6faccd6f3cde728099e8ee54616d1c590f4c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 $CDNENCFINISH .ENDS BUFFER_DELAY *$ .SUBCKT INVERTER IN OUT $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf244656e81b84a3fc40cf393e03c403d23e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811fa1447639072c48ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS INVERTER *$ .MODEL D_IDEAL D $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 75eac7fe7be88fbd8f93d26d6d7158edf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 $CDNENCFINISH *$ .MODEL D_LED D $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 05b7e48834d14dc5a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a039872532af236d9d172b57b6cedb7a9d79e $CDNENCFINISH *$ .SUBCKT COMP_HYS IN+ IN- OUT PARAMS: HYS=100m $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf2ab2e0bc08da7b2652a0d293edc0e45fbf454f969ffd39687bf450df4c4e9e23df8d564b4b43d4a8b 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811ac64abca1fecc7e1e847dda77d5f9443b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd $CDNENCFINISH .ENDS COMP_HYS *$ .MODEL symbol_name_d d $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf b6947b007d81578c2dfb58a8d563abc3f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 $CDNENCFINISH *$ .model symbol_name_nmos nmos *$ .model symbol_name_bjt npn *$ .SUBCKT OPAMP IN+ IN- OUT PARAMS: POLE=100k VMAX=5 VMIN=0 GAIN=10000 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 3c22fc7bf920393e42980fba0f39412f3693428137f342bac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d d1d3a87084f277dc2fe9793711afa1c8e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b 79f33636374221840efca1f16b0b0c4c3693428137f342bac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 4c899a551cd7061512a1677418d3eea3e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b d7072740a938f0e72752c8207c4277f84f9b01dedaec6f67c4b176bd7b03555bc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 425c9b52d84437faed112ed3066b88085a8d2d705d2688894223460450a363bd9d521bfb0940593fa0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 1faea247e1a8c1555afff61ed7f1575cc9ea4b833c89b58ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d b211161c561aa8ac73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd ff2f30a0f5680561a8b2bab6b462538002e6d7b91a055bf47df3b84ad0c4ee9bc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 $CDNENCFINISH .ENDS OPAMP *$ .SUBCKT SR_LATCH S R Q Qb $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 3ff62270067d0a2acd275293805a1df15414ce0c3c28bd7fe83384dc37890adeef1c3670504e0551f3c5bb9f3f22721496d6f86ec564aabc82d021902886a9e0 a7cbdf8ef8369f02abcd5bc418da0bde184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb b521439d911db4ae985fd30f1da54348f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 b9714e9f0185ebe0c3fa3d1e401a4503979added4bba322bd4f2da227571b4d2d5df8edfc52ef08bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb ff7b9cdb444d3489f5af95f73630db59f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 1054010ec6d491bee18a20b319ef4d27a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e $CDNENCFINISH .ENDS SR_LATCH *$ **$ENCRYPTED_LIB **$INTERFACE *$ .SUBCKT ZXLD1371_PSPICE GATE ADJ REF GI ISIM VIN PWM SGND STATUS + VAUX SHP PGND FLAG TADJ NC1 NC2 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 394197bedeb77a716f52d5ca6e23dacf5f77689faa8a663fbc39eed45909606b00d3e0b087c73744c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 04f5acd939422ec02fbfcc2b872ff9461d45c8eb53f8a29c749d13634498f34bc9322890ded6647b56be7388bb4ba8853543ca07c959008c54d5980f69aa986e 5316fc9fe4e05facf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 ddf70eae3b592905ac73e51ea6171029b9eabc28f38b49586ae3f463f161071fbfd58a4b12fceb5d00d3e0b087c73744c9f6c53b093b6672f1b3224347ba154c e0bee0f3fadd67246f52d5ca6e23dacf6ae3f463f161071f2da085ac1302fd51478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 b0eb42ca922cce592fbfcc2b872ff94683aceacad20792c7749d13634498f34bc9322890ded6647b05ed049cabd059d7af34d43db6b6477cbc2933d56eb6c3c7 af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 8f10d309634521e5107192c97b3918a9c76dbc50c48fbbe7d0fb8f8ac09713ec478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 717cdf892ff6b6ff26c880f485e2ca3492ebc16da04e46be7de72266a8957c9762d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb c6ada2f6665016dfac73e51ea6171029df13108db75bcac0ec8e4432708a2f10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 605b35877b85eee721377c54379bab5d239bdbe658d21d00044c5edbf77fecb6b03db27a4b23eea8387ddbd4b3ec85993c3ebf3aa31b5c39eb81723a9021625e 2ca24c18cb27721d153e73797dd8d866a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e dff667fce1627b8f36b24b5db985d2d3ce28bcb138548355116fb2ef8f954fae37533a275f2c6d0eb5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 00575617ddd170c91068d23fb1a14817be00a2a37fc213af7f6778186477bbeb7826d86a24e0c932558ae2e6b93c4040672f752658a09f218d5c737683766352 a147194f3a3bf6c0710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 f29d7d98ef0d8ffac4a17b59ca91381df45310c19b6b8ee57017057a427e6410b540685422c11ef9fceb72c6584bab533cf4807158e4909c9d6bedf9d0034ac8 605b35877b85eee721377c54379bab5dcd9f9b0fe66d8ad1b5b85bc0d31aaef583bc4964f97c0bfb1e00d217525559aedad4bb70f534f24c16944157eaac9744 a2faec34d68cdd2af13ee61e90b65ef18ce113ea01486d742446811279bcfdca7e4eff80f489c700d80f09fa99fcdc9f31ff87f86ef7d8025ac6c13a39cffff7 64a2af3d08b8c3fbe71f71e187584171b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962dd61e0a440bad77e3138b871d3d163c946 273ef0efd9cac693c295486b1819e032f45310c19b6b8ee57017057a427e6410b540685422c11ef9f78e3835f7dcf08337b2d2e15ad7f2468671325e6f4b6b25 6422a9133f078ed399298f7cd44d061d706b807646b803717017057a427e6410b540685422c11ef93063c3bb852fe4d2fe14e8ed893f87905d43534984e52420 2579318862ec410f5268f2b9f86a0eca858728efae680901a23477990359ea58c64639ef522b82dbe7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 f29d7d98ef0d8ffab390595cafb1ab9635b229f6ed36cf79efe06c4f9b313c77dbc3554236bba2721c0530388a0d45f3f64c4168815a7f58b9ec58759fbaecf9 44e335dab141105980b07acdfe1a6318184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb ecc3810338d4a815ec85f36e56eb5e07f45310c19b6b8ee57017057a427e6410ce3e74f18b11c63edea2f49989a93410184dc1300cea2a136b276ab17ad27652 605b35877b85eee721377c54379bab5deb87848776396383b5b85bc0d31aaef5c78955b2f9a9a77ca7acfc5f2315b7c44c49b18e65b2012511d006434ff70a7c 2579318862ec410f5268f2b9f86a0eca858728efae6809018683b141dcb3272b7ae82484816be00fb5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 605b35877b85eee721377c54379bab5dcc0121b5e20e20767e2db9a6f9c8f569a3453ba7982d296def7dd173ebafc8a5efe06c4f9b313c777a5f555c7f36bc06 55f7ebc1844b945cc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 dff667fce1627b8f36b24b5db985d2d3ca919d09a48d33e1b19c9f724420bb21024a2e9187f5d113e73070a45f1d549ca0c7a89b875d76a7668ff86ff0a77892 273ef0efd9cac693699b83783a230135f45310c19b6b8ee57017057a427e6410b15a98c80c85bdd8834492d15d72f82c760b7acfc94bff32bd6e0240e530e0d3 00575617ddd170c977da2069621c0870be00a2a37fc213af7f6778186477bbeb9b7fc6a7cb92def0ea7d4f030068283373d9dc50e4e85c45abb485c8ac7a39ac 00575617ddd170c93a6d68c1db088061be00a2a37fc213af7f6778186477bbebe3abc915180b0fc75a90baf5cf07376f49bcb2e9b7241eb49d6bedf9d0034ac8 5dde899679de79ab1b335ff66691221544e30ee031766bfac90827f4e9cf024b821d3ad19a17fc5962d766f77596a54bf588045849eceb90e1051d295f61418a 317f1bcb1e5ac862ac73e51ea61710293497978ed7181356a099cec494ae8989f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 7b300a002f2d8ddd218ee09e41104590e28b1eaee7cc8472753c64a4a951701a9238c7ba345aa441c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 b9ed3e04d2a793293fe9a17f99afa94395e943ccd8868a6ae93c8c7b51168b14478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 f1b71296a16c9ee01b335ff66691221512ea7294e684b839f3c4e72344563a843b250a80e39602b5042f0c0c78bb0deb184dc1300cea2a136b276ab17ad27652 23ee73d6065f3641d811871cc3622e4a019b8717068e3d443f21a179b2be58baef1d7357d3c4e2f3644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 2c7f46f84591bc12e2ad7048ed9193b1523b2604a68e8ef9fdf5f62657ccba9b2dc8ed9cc96ddaab24fdfd9bb2e10b07a0c7a89b875d76a7668ff86ff0a77892 857620ce20ef86cb26c880f485e2ca3415329f00962841785a4c41089daca73e787784bc593e995d23b782b3d6a37df1e7eefa795927f22c7d5ecccba7838ea4 8807bf206d8a4bf4da90698ba1ee0b1344e30ee031766bfa2eb33e7d0c66effdc4263047304fc101abbf8da1f96d2fb2492a61aa0d75bc53f41f2ac565d1fd58 d36d26370afc449b1fc67ec68dbc352ea826917222a64646f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 f197831ab997cb511b335ff666912215962084b4cabaea50c0996ee0a6b29beec9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 71dbbe87e53e082f599bf13f0371d5b4fda72f5818c81bf49e91cddcc46315d65ed2fe27f6c34366691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 e8686e014b15db761b335ff6669122159c3be3c559456c162f7290d7f191b8ae23b782b3d6a37df1e7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 c858d814c56a2bcc769be4ce041f188824046311950bf77c4ba887e5e5417704abbf8da1f96d2fb2492a61aa0d75bc5381d5360d0e44f50c5d43534984e52420 48a94d11d238250f3e182210b1d9c2bc0dc94f7d1fc62090e213edf528fee6b2300b06d6b098e56a7a72378188149f25691018eed3b49c36df42c068afe98c8a 9e5134779ded2111f45310c19b6b8ee512d693d8957db81b478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 e72ff3e7fc7190cdda90698ba1ee0b136ace929a007d96c44ba887e5e5417704abbf8da1f96d2fb2492a61aa0d75bc5363ed35b1266e36425d43534984e52420 f58ffbed3f217484706b807646b80371895d05bc59882af8f1b8d790cb2e41c9faca85d0862a74fbfc528ba36843793b0fa984f27f78bccf7d4d396707233756 4cf294edf7e0961f9b08e82f0908ea3a184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 4a2e92973c32fd12551cc969959c56b127056d71145457d5fa52237fdde26b44691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 6f23563494b56938706b807646b8037132122f815f7bf45c8e927edd2d745704be7b72e16c425c0c78974fa8c5970bd3128fa59261fa1a65f44496155f03ed4f 2a76c18f665e8c270dbeca54fe4a6fa68c81757d6b17a69f9f7df7e1d853713719fc61b223c11fd91b03c3c8b1210eb1c9f6c53b093b6672f1b3224347ba154c 1fcbc249eb94715326c880f485e2ca340639c092da8a0ddddc87d8f5e8e39da462d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 52ba738fba12eb4a1b335ff6669122152ca8047c7957b30eae1e05fddac936fca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c2a9ba28f5e45e265 f80a395284a571112fbfcc2b872ff94677ddc6f43cf11494749d13634498f34bc9322890ded6647b913601db0b53db113543ca07c959008c6f43b879c715b844 0db7e72d6e369fe1691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced 340902c1590d2246cbf62b4d3dcda7184aed8b565a5e13815c9e084edd7d2158f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 09a2b761cdd63986d58d21bd311ea6ba2716e67bb37c739248a22ba84875dab5e3e5946109ab96442be4d4793f1a270b2bdc2471723c531b74fb7cf2e7c9f235 32cd76a2a36328a99aa9a9248f306fbf65cef533b34422d3d4b905c33e8bae272576175eff3c1c5ab5f1c17ee7956303f716375b8c71d2ca2a84cfa93f6086c1 09a2b761cdd63986d58d21bd311ea6ba9f50c449b546348c48a22ba84875dab5e3e5946109ab9644d2f28a5c4bc363c766eaeb9fc4cc8ae125657ebd83de6526 14d9ecaf67b8c94ac3322ae60df680c2b6cb8b57da5c237d3a9cdabdca00b010bdc21b64c436efa17cb5783fbf51f543f588045849eceb90e1051d295f61418a 95216fad1e8e9329e73070a45f1d549ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 09a2b761cdd63986d58d21bd311ea6ba0fa4ea595ab98ca05b6db4b5a524f0cfc24c449b5177ec438492e52ca9907137d45987aa526f7ebcaefc2cbd1904f036 8ae1ad83327b81dec5446a5920f1d318aa11a96fd77a05cab74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 21cb6a29d4b0b30d21ba0642d7d35b3451ffdabf74bf3f4cf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 4cb05053dd12b0f521ba0642d7d35b340c9f3156902d2775f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 09a2b761cdd639868eee1ee26f081f21957037c396f796b5025af90ddce02ede557891869bc2e855803fff23a4e2a281ce5ec34e6f8ad1ca20e65e1717a0b297 c35972971bda6cbfc2356fa0b0fe3ea9f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 09a2b761cdd639868eee1ee26f081f215fdb5cf0a0117bb6025af90ddce02ede557891869bc2e8553a1a9b7f4a1b1ea3ce5ec34e6f8ad1ca7f4fa8c50191d90c 021132bb3fd82585f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 09a2b761cdd63986809e63d19e808c40706b807646b803719f37e7a110c0d30f8492e52ca9907137691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 05b5f1398a5d6f6906f29896cb00af16e3e5946109ab96448a6d0d3edb9c296d3b698759e0f6968715cde71e5a76569bc2356fa0b0fe3ea96004e157994bc9bf 09a2b761cdd6398671d94cdb4243f500706b807646b80371aa3deeb51b78df108ae1ad83327b81ded2bbaa26aad6c6147f96a94c9a957a0c5d43534984e52420 05b5f1398a5d6f6938e5202811de8b229aa9a9248f306fbfa019b886ca2946c45ec35ee69717b5a5974781ad152f7972184dc1300cea2a136b276ab17ad27652 5c2e262d493b312ff73e0c5051b95e15e503df2c2a48623568d4c1b330b1e1fa62d766f77596a54bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb b090b65fdd16a27f1b335ff66691221511253b9116fca4b5cc818c2e64e2441d3c991a04052eba44644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 39b56735282d89731b335ff6669122156b74fd3a75af1db9b3eff0053075038b82b03c4529a3797d478a87bc5b8e6cf9691018eed3b49c36df42c068afe98c8a e513bba6d3228b87ac73e51ea6171029b9a376387dcea33ea1c0f782a9dccaf9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 b0fb847a3b385fda1b335ff66691221528bb17bf747c349a7bf91ca1a5006a10f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 a9174ed1bf108f9a0c5c216a3038c78c2ae141f64a46e45d8588cdf916f86d19e213edf528fee6b2300b06d6b098e56a3950d9f59cc9528fd38aff4e12555a5d 282e8027f6fd021a744533db3bdc064cd7dfcfdb598aef9d554e6be04a5ec8e754cc636c47659e96faca85d0862a74fb4674009031596e3afd5baaf91a42e7d3 ce28372646c1b72b8f8029c76dd5a72b644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 02673b7763e121d2184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 7c9acabd26c54e03f6a2b547dc976ba066c88eeb6c99df5da6f1ddb48cdca4178d1722fa3b58496691ecad6459b78f8ea076e3216a8b20ce62d766f77596a54b 7c9acabd26c54e03bf230db17611f82f66c88eeb6c99df5dc0db4b7a44834d678d1722fa3b584966c1119d53e95a4af64ebedf1affe729adabb485c8ac7a39ac 36beba41d0d291a4b1cc8ce9c0a7c4dbcd30ef1298e2828f2ca13e67bcc94ff2749d13634498f34b2228f4976daf1309c35972971bda6cbf82d021902886a9e0 7c9acabd26c54e03b585b96681e0ca9b66c88eeb6c99df5d836ccb36c8e634738d1722fa3b584966e5cfc863a8a501d624be77f172ebdc51bd6e0240e530e0d3 282e8027f6fd021a44f91394b9d9e846d7dfcfdb598aef9dd2820111558128219befd31f50da7206fe14e8ed893f8790c9f6c53b093b6672f1b3224347ba154c b895f158934e88384674009031596e3ae7b47cf3a9353d48d6c1365d95c11ec227a93decc2d57179c1fc488386db32b8e9fdfc8a753de111d38aff4e12555a5d 9479dc5c320af2ec1aed393b8b55339421a9aca16c78487ddfb89fd4996a844c8d1722fa3b584966d11416a3e67abd4b6d94ac99831e831f122d19e668be3062 547fa7df049edd5bd3ed529e2f03bd0da0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 7c9acabd26c54e03dca29065f7b4a684eac8453836f1167d9fa4c4bc97a88581e2bb5bfeace0dc4a209a5091d0afa22fbc9ba1249b27d252bd6e0240e530e0d3 b4dba295799dbf1bb585b96681e0ca9b66c88eeb6c99df5ddfb89fd4996a844c9e4129bde4083afbf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 282e8027f6fd021a6263a80a123a82bfd7dfcfdb598aef9dd09f9d772f43ebef8492e52ca99071376cc173f11f5b8563f5ad3ad78240944d770dbf5b363fa50b 52d178a251a6b6d5a778ba06ffb6481ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 66848ab3646ea9277df90e6847038987295d7e616dd35350af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 b4dba295799dbf1bcd9f9b0fe66d8ad166c88eeb6c99df5d74a45d3e091b7fad9dd87a2d3e5280a11de333fbd2e0f35df716375b8c71d2ca2a84cfa93f6086c1 9479dc5c320af2ec5c89cd247067d79021a9aca16c78487d112a23f56123a9e48d1722fa3b584966fc8cbd0336a453d86d94ac99831e831f122d19e668be3062 547fa7df049edd5b7c6a05e67fd634eea0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e da33f0d11a9f0f4ebf230db17611f82f66c88eeb6c99df5de7b47cf3a9353d4832a63025bcdcc99437b2d2e15ad7f246042f0c0c78bb0deb16944157eaac9744 36beba41d0d291a4df9ebaf9f2a35d54cd30ef1298e2828f7df90e6847038987e4cdac1c8a1d1b266e3f0899c50425cf107598ff023e5e6fe2ebc0dd60167d43 36258f891834800beb87848776396383ee894940744d7fd976fe71021a80bf2f2e23ba67bb505870b579c1d0cc3dc7d3644126c9831a96bde848d5f4c074f39d da33f0d11a9f0f4eeb8784877639638366c88eeb6c99df5d58ad1114986fcd033d34ea0a4263fbc88128d567d8fde99900d3e0b087c737445d43534984e52420 9479dc5c320af2eccfee2d3418fdb57721a9aca16c78487d7bdec82a4b7b53f08d1722fa3b584966e34cb4739f0740126d94ac99831e831f122d19e668be3062 547fa7df049edd5be96826b1b8137c4aa0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 9479dc5c320af2ecdd40236d4888ed8d21a9aca16c78487dba5bfaa11384a59f8d1722fa3b58496619783d2f8036fcd56d94ac99831e831f122d19e668be3062 547fa7df049edd5bb41c954d84327076a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 282e8027f6fd021a05f06f9213ce83bad7dfcfdb598aef9d1257635b7fb4c541ce5ec34e6f8ad1cafb3114ec070b43c09abc853f63b3fb5a9aeb1dbca0cd0241 7bd9089c90910d476111a6a2967a6c58691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 9479dc5c320af2ec34d8be222b1876f721a9aca16c78487d4f7687ea86dbe3318d1722fa3b584966e34cb4739f0740126d94ac99831e831f122d19e668be3062 547fa7df049edd5b27d9f7e5287cba2ca0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e da33f0d11a9f0f4ec12e63f53fc8b6c766c88eeb6c99df5d112a23f56123a9e48d1722fa3b584966a75b4546146326223c3f33a379f0af8a62d766f77596a54b 282e8027f6fd021af5687491f31f2924d7dfcfdb598aef9daea69d63dd36534320f664a3ff7b4a04faca85d0862a74fb4674009031596e3afd5baaf91a42e7d3 ce28372646c1b72b743bf58d1db148a3644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 02673b7763e121d2184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 45bb615a0113a2d76295f13f271e3dd4f45310c19b6b8ee5602264da8f44928d4c49b18e65b20125e7eefa795927f22cb124fbdd29716cfbacdab751cbf202c2 32cd76a2a36328a99889c62aee5fc834c6bc33b4ab296cf04d4c212f6c1abf84cf5d0219e0df7a9d7793c602b9feeb0dec7850cb5e2600ad9c7a4bc0de56f663 36258f891834800bcd9f9b0fe66d8ad1ee894940744d7fd976fe71021a80bf2f87ba5971c1666c6321a9aca16c78487d836ccb36c8e63473789bb4c149c0f7d2 36258f891834800b239bdbe658d21d0066c88eeb6c99df5d4f7687ea86dbe3318d1722fa3b58496619783d2f8036fcd59889c62aee5fc834ce6a500a0bc3e23b 400e963555b1a2d2dad4b7980b83d60ce7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b 53a47ce20eea766578777e4c883822d7496ee1101b7a39424ec484d93e85716ec50ef93b4e08741af588045849eceb90e6626fc5bfd508b1d776614f460f1ceb 282e8027f6fd021a95a9d5006d1ac9c1d7dfcfdb598aef9d83676253d12347c501de569537f728dffaca85d0862a74fbf42a59751c2d9c74c8871d0203ef020b 9c696fb13148990c8675a01b2db95be7c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 da33f0d11a9f0f4ebc27f931268b406166c88eeb6c99df5d250025f01b12eac228962c68c37beadeed013b7ba2d18b82478a87bc5b8e6cf9d38aff4e12555a5d da33f0d11a9f0f4eb585b96681e0ca9b66c88eeb6c99df5d209a5091d0afa22fd267191e106d0b0d8387f45e647e26ceef1d7357d3c4e2f39d6bedf9d0034ac8 65f8ec3b931d45fecd9f9b0fe66d8ad166c88eeb6c99df5d836ccb36c8e634738d1722fa3b584966e5cfc863a8a501d66b895da7740b2625d38aff4e12555a5d da33f0d11a9f0f4ecc0121b5e20e207666c88eeb6c99df5d942409553266e8b316d68c73f74bc5565c8d68af7fe2e960609e19a3b1330370e89729e5d38ef58f 9479dc5c320af2ece68811ece2528fc321a9aca16c78487d8b3909b9b1ee98c48d1722fa3b584966fc8cbd0336a453d86d94ac99831e831f122d19e668be3062 547fa7df049edd5bd1e514cf9ee05ca5a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 81bc0cb7c12452441b335ff666912215062777163355bd154f60af2351f95502c051d21af37637adf716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 abea470061b4cf4674c94f93c383e2578803136c44fdf03c12ea7294e684b8397b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 7aff1ed175018062cbf62b4d3dcda71850495b21047dc1007a2bb3bc46c04b4e478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0e1734198eb2d5d30 a16523cb4c600880ac73e51ea6171029725174985eb3b1d34d745b560a9864aa2eab8f59404e32fbbfc3976bee98b06d691018eed3b49c36df42c068afe98c8a 900387b6be7bb99274c94f93c383e257d68ff0e069060e91ef1d7357d3c4e2f3644126c9831a96bdb74feb6ff8076c794d22c850cafe6d8869a81fde624533ad 32c994efcc2d922e0abfc569c2f155647ea6ad46ecf15209bca66beeb277b1607b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 d8f5a2ccd87b60eeac73e51ea6171029977c9ed6cdc69f7c55ee2ca7818ff4e6ffd414095be51912644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 0abb8c42c110d7c574c94f93c383e257b06f7b2a5221d6a1cdc50eb41b28b6da1d28299200febf22f32a46da3bd46a365d87510856e45788d06855f06d6f53fd 75430035d97ed48aac73e51ea61710292f63ba7cec69a5ae92ebc16da04e46beffd414095be51912644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 98b5f0d56fa74586769be4ce041f18881b695623e8d2ec72fc7f201294a05a1d28b5c8cbdfe3537fd7059c8c42854956483cf72d1898804474fb7cf2e7c9f235 f0141b5f35912e420abfc569c2f155647ea6ad46ecf15209cfcbccac057ce9367b9253cdb3e17e06644126c9831a96bdb74feb6ff8076c7955ab08ba49ed7650 0382627c5bd012d40abfc569c2f1556449ab06bccf3c5e3aa52c5d0900251b18f29bae4b68f7bfb2a10c11dc3b762f9f6a55ec42853e357f743ff23adc1a84eb 2a0dde369b0e03c9ac73e51ea6171029a294b4c9b4499e412f30647cd4a074f8cc0a4cfd13354a98646fb8d77d1a9bd0a0c7a89b875d76a7668ff86ff0a77892 b052355e65d40bda6072bbb927e75d221f5a36c0cfa2e93a622e6bb14f828842d5842d53d11b6659a54dd50435f134f9bfe7aa56cbb7750016944157eaac9744 8bf314ab8c0348996072bbb927e75d2233712e677bf821410e88ff585c7721b717db01c01a85b031d741aae16bf64f713db07fb45d793ed8809b758273603f84 afe317ae10e98155dffad4255220698bbbd6848a4bed6ce75cdcae49952477491bbe45b2adb70fc37a5aaa106641e9738c2b08ff5cc148ae11d006434ff70a7c a34eb0be5ea600af74c94f93c383e257d0e476fa0d4f54a90aa9758bb879ff7eee09f8451cbe1231710f626c2faf14a6f716375b8c71d2ca2a84cfa93f6086c1 e9dd452c4e6cfebeac73e51ea617102936c315db1f9d8b9bec8e4432708a2f10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 a3d26799f30d8e0d27881184d92232d68bb760bf7903e92ebb8309e553dbf02da9f8c600a5632a411d155fb90c9a9bd766eaeb9fc4cc8ae11a4ba722c03153cc 747e4f2a6405d9546d2aa86b77a26c95691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 3e2f6d3b6fa1f79ec9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 dcfdab3db4e32d43ede29d0f5869fc33706b807646b803717f4022ad17ec791a661a51fa4c6b374154a3c6ec78dbb3aba9f8c600a5632a41dda7d25602215933 cc29c56aedd5408745b0476b0b2677a2450cb01944621787646fb8d77d1a9bd0a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c2a9ba28f5e45e265 a3d26799f30d8e0d27881184d92232d6f5f9ed6312b8b794bb8309e553dbf02da9f8c600a5632a412ab53c80251d77034c49b18e65b2012511d006434ff70a7c 32cd76a2a36328a970c06ad4469b5f94cebdfdad9ec516f4887ff07020def09bc1fb5ea162ffd514e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 dcfdab3db4e32d433bf41dbcfedd1a73706b807646b803717f4022ad17ec791a962774806c3702bc70c06ad4469b5f94312fa97e331c1da84ae99547937d63c8 661a51fa4c6b3741de4c8491ec5adb9e644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd a3d26799f30d8e0d27881184d92232d69555c9de400e3ff4bb8309e553dbf02d2552b09b2698b2f7faca85d0862a74fb691018eed3b49c36df42c068afe98c8a 5481192eeae2d9bcb37e8d7bc524479260738008e3ec23e9bd64c1cf62f7de1ee9cecb35b9656da53c43768853245e2f3c7d75eb5aa570c18f03faff22254705 6e8b426636593381d9cb531c84b2e78e691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913a1d65e1bf53966969 94c296d774d16dc6029d261fdb11face706b807646b803717f4022ad17ec791a61c0f368e65895e727a7680140b18b02a9f8c600a5632a4124bb2947519915e1 6b895da7740b2625691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d6f7a9cb3a3aa8fd3bbb8309e553dbf02da9f8c600a5632a41d43d8e2b52dc60dffaca85d0862a74fba0d09017c0a7e6e3 cbac94568cb7ea80af399d32d282acb6184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb dcfdab3db4e32d43a33cd2cacf2a506c706b807646b803717f4022ad17ec791aad422042d90c20ff70c06ad4469b5f94e3916bcf3d4f3b094ae99547937d63c8 661a51fa4c6b3741765675393dc7d125644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd dcfdab3db4e32d43bba88ce0a19c8c96bb8309e553dbf02da9f8c600a5632a411b4f7fa9a4b8e3535071025688454c9ccbea7112d78cac1e41a05de3116e9b24 cfa43262ca04397ebba88ce0a19c8c96644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd dcfdab3db4e32d43ede07d0c58d4f032706b807646b803717f4022ad17ec791abca82e895767d0d27f4022ad17ec791ac2725da9eb2b53c3ea4f4ffe9d39f1af a9f8c600a5632a4193ad7f2331f679c039859341766fc92cb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd e8ac5e09ea758be7a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a039872532af236d9d172b57b6cedb7a9d79e dcfdab3db4e32d43f260bf685f02b461706b807646b803717f4022ad17ec791a42584466a0744c915286be7e40403390726a141610f9030fcebceff5d226dc59 5ed2fe27f6c34366691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d6718e8ffade3a3c48bb8309e553dbf02da9f8c600a5632a41a2551ee6b7ec08c82bdc2471723c531b74fb7cf2e7c9f235 32cd76a2a36328a970c06ad4469b5f94b06ce489a5ca8bc762c70e641415368ae382e6191d1e3e368490b79e7682309954c51e02474204001668843a96fba0b1 70c06ad4469b5f94563cdd7e1d34ebd6233b9393f3163918e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a3323cc4f3a5d7e023 aa3996e99201019ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 8b85e4e539255337f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 73f5336ad93df892b5f1c17ee7956303f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 a13c3ebdebf2dda89f946f657c75313a706b807646b80371f883903d081a702445b0476b0b2677a2835e233e602f4a1ea95eab34c46af31de89729e5d38ef58f 1c21120900cc4a8e36396189a293dfcd706b807646b803717f4022ad17ec791a42584466a0744c91e12e7b2be99df4b145b0476b0b2677a2858904c65dd9fcbe ce133616d118868f7b4ac1d86b005a10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 0418cc75e3d7cf68710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 a3d26799f30d8e0d27881184d92232d6528864a47f84deb1bb8309e553dbf02da9f8c600a5632a415f733ff96338b1f2dad4bb70f534f24c16944157eaac9744 32cd76a2a36328a970c06ad4469b5f942787d48592327eee7e9f11aea7261d3fc1fb5ea162ffd514e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 94c296d774d16dc61a3f0583e1a3bd76706b807646b803717f4022ad17ec791a61c0f368e65895e764c58fec2fc42cd7a9f8c600a5632a41c4ca8063797fb61b 6b895da7740b2625691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a3d26799f30d8e0d27881184d92232d674efa137fe2e0c89bb8309e553dbf02da9f8c600a5632a413741f88c4d16baa8ce5ec34e6f8ad1ca1cc1a996f7fda727 3855efdebcb13ff95d7d82e5a16ed00f644126c9831a96bdb74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd be933631531f9659e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb937b7b413a3c0865e2daf092be8c923c4 1c21120900cc4a8e19f3f50aa9dc900f706b807646b803717f4022ad17ec791a42584466a0744c915286be7e4040339045b0476b0b2677a2f7ba82e1f913d254 ce133616d118868f7b4ac1d86b005a10184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb 0418cc75e3d7cf68710f626c2faf14a6f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 dcfdab3db4e32d43d10aca187e10ee8f706b807646b803717f4022ad17ec791a7fc190a94cff1584c4fe171c4aa376b5a9f8c600a5632a41d45c707ab17d8b3b 2994a828cfcb8a945699c5db1d4fd476e847dda77d5f9443b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd d49c10eabba409d0691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced a13c3ebdebf2dda881d04920058e3784706b807646b80371f883903d081a702445b0476b0b2677a2367114db4850319ea95eab34c46af31de89729e5d38ef58f a3d26799f30d8e0d27881184d92232d60fa4ea595ab98ca0deaba362d68b5afa8490b79e76823099b616acb3afc2463ed3b99b01fef3c64478e91940a8e16688 7793f45490075ab3184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 2a6720d0591cca0540f05819e599c2c0f44496155f03ed4ff588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 a3d26799f30d8e0d27881184d92232d6b5c9d0c1558cfdd3bb8309e553dbf02da9f8c600a5632a41737375a8f10d4240faca85d0862a74fb1e10c57f3fa5c4ab c8fe38984326176d6d35d8485846d699e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b a13c3ebdebf2dda8dab4c24b55761cda706b807646b80371f883903d081a70248490b79e7682309988d781a019b79b2cf357d2495314aea2abb485c8ac7a39ac 1c21120900cc4a8eb4ce929101f95640a665d0fac02ce03ed9e82c4170fcde6c7c9c7b2e8cc681a533f224eaf10e8b80b37e8d7bc52447928c38e2b886ad00f4 2c671ee0eeadba6424fdfd9bb2e10b07a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e 099a86bb88e9bfe31aabf11df8bc7d16d80baa145e5a06b5b0daf6fdf32567c9447da73140e1fc0c72d03a382a5bfff6644126c9831a96bde848d5f4c074f39d 81a9746d786d11d6818d73f79dee5cb4f418b0d160a3681f3dd6b421a8a3725817181a2338ab2aebfaea4b98a48f84e01933952b4dcad44ce0c8f92b9e893480 0805c9bc4a8c6e821b335ff666912215dfcb0cac625c1873016f27e7fe377c06dce40a334853b6026620d3f6c560089e644126c9831a96bde848d5f4c074f39d 224fe9df4b4ef4f274c94f93c383e25734ea5a4105092647687fb7a3cd2ce4a4c841ee37f63fbd9f789bb4c149c0f7d2f588045849eceb90e1051d295f61418a a1642ab168aedbca706b807646b80371cff3aa4dfc172ba9fe8065cdb5f5f8ce9d8a6e2e9f780fbd77f292f81f948d5c30c576d2a5a01b7b87e4581c8c748cc7 17cb17e37c3b5d6d55136b92d0559ec4e71f71e187584171b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 2dbdd1f19d21f2c6f45310c19b6b8ee5cdbea1dc33dbc9f7478a87bc5b8e6cf9691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 e32412d8e97ecf0cf45310c19b6b8ee59a410bc651fe35dc62d766f77596a54bf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 dbf12f0360092c452fbfcc2b872ff946ed93a0256a6d844d749d13634498f34bc9322890ded6647b3e79fe16148a605c0bf1a37a93ab80b462b84e5bac7fe806 012c1a3f018cd4280f4d3610e546ee8e184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb cc1384a8203fb2628cf29811b0e6da3536fb420f5a067a1ef588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf8ea88232772e9185 846dad09021724e51b335ff66691221555e91b4e96b9929fcffa2bb36a30977a184dc1300cea2a1333803012812e35a27bbf3a0197757d1a10e6517c4d5c1c74 240cf6a83072ff1a38a199ba1268a68172d2a53fbeaf00843cafa1326cfe18744842ef87c436514df49fb174d085ee41608e5066341ff6bd6004e157994bc9bf c1dd9c389b868458e0c9cc74d563e9795556ffb9d7663e42817afbf1a1467aacfeff6bfa8393f3f8f8c60dfea3fcb448617d098114966bf404fdd277fd95ba23 2b1f6b713203d99458b58148317651d2f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 42cad0d02e943b3cf45310c19b6b8ee547f0b089656f266e62d766f77596a54bf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c4fe6e5c7e47db8f7 0d5aef5328a6b0bcac73e51ea6171029067f4902092fb36aa1b7be63766c6afbca844e5556e86be4a0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 2a3fd364408caf246f52d5ca6e23dacfc8fb14f6ca5b8e2bd388e23ae3aabe19e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a198671645a8a8b509 $CDNENCFINISH .ENDS ZXLD1371_PSPICE *$ .subckt ZXLD1371_FOR_HIERARCHY_S7 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf ca116cfd9f503f5a31820e631d1d1d74bc43870b2068c893691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 22fa704315324fee6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44b8257e7c370c44b80ffb76e2ddf4497b2661590815226ffb5d0d2970852fcd9175a72dcf08b05ada72e8a5ba6eb8ba83 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S7 *$ .subckt ZXLD1371_FOR_HIERARCHY_S4 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf cca5ca7cd3bb954631820e631d1d1d743397604f987b60be691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f c89815736fd06a736f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44d3c3547c91af769e0ffb76e2ddf4497b658b10ab5642c9074b56e07cb2a0a4fbe2da13bf6ad1ec6e8a8fe36961566219 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S4 *$ .subckt ZXLD1371_FOR_HIERARCHY_S1 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 44f117741689d59131820e631d1d1d749e35700c7913e939691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 3c76beba9b808c126f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e447b3ba2fd65dbf9050ffb76e2ddf4497b2661590815226ffb5b32e22ee2762aa4de796a07e247501c3e91162e7d1bf20b $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S1 *$ .subckt ZXLD1371_FOR_HIERARCHY_S5 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf a41eff5afcadbe0431820e631d1d1d74cce714c3daebb9ef691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 0d00147a4ec8159a6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e444ffca53f33c7306d0ffb76e2ddf4497b2661590815226ffb5b32e22ee2762aa4de796a07e247501c3e91162e7d1bf20b $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S5 *$ .subckt ZXLD1371_FOR_HIERARCHY_S9 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 0d4fba81348870d631820e631d1d1d74525a947d4222b598691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 7e9baaa9719bd1f96f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44ccbbb1088960694e0ffb76e2ddf4497b56602f79b0c467cddacf708331606702dd351453c45c7fd75065ec6d2c8c5479 dc224b6b76a2bc94c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef60c1cb2f0da1ca881fcd6be7a2000af83 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S9 *$ .subckt FREQ_HYS_CONTROL_freq_S5 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074bc27f931268b4061ffb40d9244a39c7b6a68ac505a5ecff2c88548d8e960e4b4f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd227765b42d27caeee0fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e449700bce0c7d12200b469a8d685c038374bf43f00b3546d6cc905474b9732df37ff411e42e94343f8a5ee8a3eda0c234c 768e04b30687cfb2f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b28771ef6559fc277d4b8d420df9a063adc751 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S5 *$ .subckt FREQ_HYS_CONTROL_freq_S4 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074cc0121b5e20e2076ffb40d9244a39c7b6a68ac505a5ecff253d628d3aa8f23f0f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd20eac5929827abc620fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e444bc03f093be0dc18b469a8d685c0383732325ad26af3c92db16935f5527df49e8f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S4 *$ .subckt FREQ_HYS_CONTROL_freq_S2 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074239bdbe658d21d00ffb40d9244a39c7b6a68ac505a5ecff2490cb4e483ee24adf716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd23a40f0eb405719560fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e440322e8d4ef436925b469a8d685c038370cf9f34ef7439c7d45316724feefc5c28f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S2 *$ .subckt FREQ_HYS_CONTROL_freq_S7 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074bf230db17611f82fffb40d9244a39c7b6a68ac505a5ecff233cad0128b74623ff716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd2fae8f259c6c39e8a0fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e44f29f1bd798b90240b469a8d685c038374bf43f00b3546d6cecd4cdb03700be1f0fce1330368f375ef1481883b3c827f1 5fe9ab614b8532c6691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db1a4300bf221b913af248f4846b4e8d26c2c478990dc28ced $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S7 *$ .subckt FREQ_HYS_CONTROL_freq_S6 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074c12e63f53fc8b6c7ffb40d9244a39c7b6a68ac505a5ecff27ac7164c6d09e590f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd23284dbb5b24063b50fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e4451f6f2e2c182f951b469a8d685c0383732325ad26af3c92db16935f5527df49e8f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S6 *$ .subckt FREQ_HYS_CONTROL_freq_S3 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 725de3fcbb693074eb87848776396383ffb40d9244a39c7b6a68ac505a5ecff223ed7a9eec21b7f2f716375b8c71d2ca7447dc705bd2b9a6b32ab536d12dcb53 2b807af9ad33acd211ae75f02889d2920fc456520f02d491ed53b4ce5c20ee27b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b673939e13ac51b349 1e7e75f62a07f7b1bbcb463bf6330e443f4a0cd3d8ecd961b469a8d685c038370cf9f34ef7439c7d45316724feefc5c28f182a59499ce6406c15b30d8f543ada 816422455737d21b184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8ca8e32446a12da7d50bd780059ff414f8 $CDNENCFINISH .ends FREQ_HYS_CONTROL_freq_S3 *$ .subckt ZXLD1371_FOR_HIERARCHY_S3 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 49437a5c2c000e5531820e631d1d1d7451c16968e1146dc5691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f 196545b3a77859896f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e449fca2d09a1602b870ffb76e2ddf4497b2661590815226ffb5d0d2970852fcd91e7e145aac8e3e7699d637f5014d15567 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S3 *$ .subckt ZXLD1371_FOR_HIERARCHY_S2 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf c21144fd15b2c61331820e631d1d1d7423f284e2e346bfb8691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f e07b7a6acd4bf43c6f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44eff574bcdcb677aa0ffb76e2ddf4497b2661590815226ffb954d83117570d624bedd4f0e0429e49f7c4bbf5b95fbb5a2 $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S2 *$ .subckt ZXLD1371_FOR_HIERARCHY_S8 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 48cad54cbc66f42d31820e631d1d1d740e2409c315f54dec691018eed3b49c363b7ed36af94fd8d0b677be974a801593db8480f51879a1db99279120ce8e2a4f e65d04c3f5d7c4236f31076d2b37e96baa35006d782c6ce9c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 1e7e75f62a07f7b1bbcb463bf6330e44a0cccacb04419cb30ffb76e2ddf4497bde068206158253e41090d0879c58eb702947f67be37eddb2d38aff4e12555a5d $CDNENCFINISH .ends ZXLD1371_FOR_HIERARCHY_S8 *$ .subckt FLAG_AND_STATUS_STATUS_FLAG_S1 1 2 3 4 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf cfa43262ca04397ebba88ce0a19c8c96706b807646b80371180f9852cfb962b0a383dc18dcb615b7bba88ce0a19c8c96691018eed3b49c36df42c068afe98c8a 2075146148d4b5070b96a7f211b663c6cd9f9b0fe66d8ad19fdd4d3bdfe20cf0691018eed3b49c363b7ed36af94fd8d0b677be974a8015938337dc0ba5af8d26 1e7e75f62a07f7b1bbcb463bf6330e4470c06ad4469b5f947053772909f75e89fb3b1a8334015d62d1c429fd2f3b2883fd2de4c0061ef81a9adc56f03a8d243c 56d61c3bc288fdfab3ae07e46b54f215a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e $CDNENCFINISH .ends FLAG_AND_STATUS_STATUS_FLAG_S1 *$ .SUBCKT COMPARATOR IN+ IN- OUT PARAMS: DELAY=10n $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f13695a267d63dfaeb5708e23ac33f007982c30b6978092afa172cac7b9698ef38691018eed3b49c36df42c068afe98c8a 16288721619f9c8b73e70156d3cd9e32ba7f00f779fc266112e28b77a3176d96f3acf00b7a00a5d9a0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 6a7043c1c76bf8115801d29f353ff668c9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS COMPARATOR *$ .SUBCKT AND_2 A B Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df167b1d69fd012a0368265dc80b7e0d46e0117c329126d1ef51031098785dc58b6c2356fa0b0fe3ea96004e157994bc9bf 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS AND_2 *$ .SUBCKT AND_3 A B C Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7f5b09636c3bdb66729bb98c81884b404e9ab688292ff1c0c1ccd6f3cde728099eb71d6b06b8085e19 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS AND_3 *$ .SUBCKT OR_2 A B Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7fe0ca60defdf7d1449bb98c81884b404e3e10a24a415fea9ce71f71e187584171e848d5f4c074f39d 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS OR_2 *$ .SUBCKT OR_3 A B C Y $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 10efb0b13c2f06ffcd275293805a1df15414ce0c3c28bd7fe0ca60defdf7d1449bb98c81884b404e540b35c06706fc31ccd6f3cde728099eb71d6b06b8085e19 17e4597d7405ff3c2f248600004a4f45184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb fd08d4c148850df0085e1afd0064919bf716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 $CDNENCFINISH .ENDS OR_3 *$ .SUBCKT BUFFER IN OUT $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf244656e81b84a3fc43e10a24a415fea9ce71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811fa1447639072c48ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS BUFFER *$ .SUBCKT BUFFER_DELAY IN OUT PARAMS: DELAY=10n $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf f8547e868ffe926371707ca6c7cdc2c0db8456fb9fc0e60ca344273ac7c053539894c1140acaefeda0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 6a3db1adc01f2d0736806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962dd61e0a440bad77e3138b871d3d163c946 d60bc892fb1b4da34d01e0f129090a713dfc58e2232c84d7e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a3323cc4f3a5d7e023 f11d6a2c6927773428f84a1a2d7ca9633291f8ae48f5b6faccd6f3cde728099e8ee54616d1c590f4c9f6c53b093b66727f70dd368fa5728963912ffecb55b6d8 $CDNENCFINISH .ENDS BUFFER_DELAY *$ .SUBCKT INVERTER IN OUT $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf244656e81b84a3fc40cf393e03c403d23e71f71e187584171b74feb6ff8076c7955ab08ba49ed7650 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811fa1447639072c48ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1dfa360badf382ef6a094882e5275efb6 $CDNENCFINISH .ENDS INVERTER *$ .MODEL D_IDEAL D $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 75eac7fe7be88fbd8f93d26d6d7158edf588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 $CDNENCFINISH *$ .MODEL D_LED D $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 05b7e48834d14dc5a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a039872532af236d9d172b57b6cedb7a9d79e $CDNENCFINISH *$ .SUBCKT COMP_HYS IN+ IN- OUT PARAMS: HYS=100m $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 66905336f9365357c6cd6456b373c3f1dbf0264b29e4cbf2ab2e0bc08da7b2652a0d293edc0e45fbf454f969ffd39687bf450df4c4e9e23df8d564b4b43d4a8b 16288721619f9c8b73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd 6a7043c1c76bf811ac64abca1fecc7e1e847dda77d5f9443b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd $CDNENCFINISH .ENDS COMP_HYS *$ .MODEL symbol_name_d d $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf b6947b007d81578c2dfb58a8d563abc3f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 $CDNENCFINISH *$ .model symbol_name_nmos nmos *$ .model symbol_name_bjt npn *$ .SUBCKT OPAMP IN+ IN- OUT PARAMS: POLE=100k VMAX=5 VMIN=0 GAIN=10000 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 3c22fc7bf920393e42980fba0f39412f3693428137f342bac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d d1d3a87084f277dc2fe9793711afa1c8e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b 79f33636374221840efca1f16b0b0c4c3693428137f342bac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d 4c899a551cd7061512a1677418d3eea3e7eefa795927f22cb124fbdd29716cfb2046728deb55b4a1950e8d6edabe13a34d2d6dc53bce5cb95aa5b7dadcd53e5b d7072740a938f0e72752c8207c4277f84f9b01dedaec6f67c4b176bd7b03555bc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 425c9b52d84437faed112ed3066b88085a8d2d705d2688894223460450a363bd9d521bfb0940593fa0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54 1faea247e1a8c1555afff61ed7f1575cc9ea4b833c89b58ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d b211161c561aa8ac73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd ff2f30a0f5680561a8b2bab6b462538002e6d7b91a055bf47df3b84ad0c4ee9bc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74 $CDNENCFINISH .ENDS OPAMP *$ .SUBCKT SR_LATCH S R Q Qb $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf 3ff62270067d0a2acd275293805a1df15414ce0c3c28bd7fe83384dc37890adeef1c3670504e0551f3c5bb9f3f22721496d6f86ec564aabc82d021902886a9e0 a7cbdf8ef8369f02abcd5bc418da0bde184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb b521439d911db4ae985fd30f1da54348f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032 b9714e9f0185ebe0c3fa3d1e401a4503979added4bba322bd4f2da227571b4d2d5df8edfc52ef08bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb ff7b9cdb444d3489f5af95f73630db59f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4 1054010ec6d491bee18a20b319ef4d27a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e $CDNENCFINISH .ENDS SR_LATCH *$ *ZETEX ZXM61N02F Spice Model v1.0 Last Revised 24/2/04 * .SUBCKT ZXM61N02F 3 4 5 *----connections----D-G-S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 6 RIN 2 8 200E6 RD 3 6 RMOD1 0.03 RS 8 5 RMOD1 0.0225 RL 3 5 35E6 C1 2 8 158E-12 C3 15 14 175E-12 C4 16 8 183E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 -1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=1.35 IS=1E-15 KP=5.5 CBD=90E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.95 IS=1E-15 KP=0.055 .MODEL DMOD1 D IS=1E-13 RS=0.15 BV=24 IBV=1E-6 TT=9e-9 .MODEL DMOD2 D CJO=190e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=2.5E-3 TC2=1.8E-5) .MODEL RMOD2 RES (TC1=3.3E-3 TC2=1.5E-6) .ENDS ZXM61N02F * *$ * *ZETEX ZXM61N03F Spice Model v1.0 Last Revised 23/1/03 * .SUBCKT ZXM61N03F 3 4 5 *----connections----D-G-S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 6 RIN 2 8 200E6 RD 3 6 RDSMOD 0.15 RS 8 5 RDSMOD 0.024 RL 3 5 35E6 C1 2 8 135E-12 C2 2 3 17E-12 C3 15 14 175E-12 C4 16 8 183E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=2.5 CBD=85E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.02 .MODEL DMOD1 D IS=1E-13 RS=0.15 BV=38 IBV=1E-6 TT=9e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5) .ENDS ZXM61N03F * *$ * *ZETEX ZXM61P02F Spice Model v1.0 Last Revised 24/2/04 * .SUBCKT ZXM61P02F 3 4 5 *---connections---D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 8 RIN 2 8 200E6 RD 3 6 RDSMOD 0.09 RS 8 5 RDSMOD 0.068 RL 3 5 35E6 C1 2 8 207E-12 C3 15 14 267E-12 C4 16 8 294E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD PMOS VTO=-1.6 IS=1E-15 KP=2.1 CBD=102E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-1.2 IS=1E-15 KP=0.21 PB=1 .MODEL DMOD1 D IS=3E-13 RS=0.13 N=1.01 BV=24 TT=2e-8 .MODEL DMOD2 D CJO=110e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=2.4E-3 TC2=1.5E-5) .MODEL RMOD2 RES (TC1=0.9E-3 TC2=1.5E-6) .ENDS ZXM61P02F * *$ * *ZETEX ZXM61P03F Spice Model v1.0 Last Revised 23/2/04 * .SUBCKT ZXM61P03F 3 4 5 *----connections----D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 8 RIN 2 8 200E6 RD 3 6 RDSMOD 0.12 RS 8 5 RDSMOD 0.09 RL 3 5 35E6 C1 2 8 162E-12 C3 15 14 210E-12 C4 16 8 230E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD PMOS VTO=-2.1 IS=1E-15 KP=1.4 CBD=102E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-1.7 IS=1E-15 KP=0.018 PB=1 .MODEL DMOD1 D IS=6E-13 RS=0.1 N=1.01 BV=36 TT=1e-8 .MODEL DMOD2 D CJO=86e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=1.5E-5) .MODEL RMOD2 RES (TC1=2.2E-3 TC2=3E-6) .ENDS ZXM61P03F * *$ * *ZETEX ZXM62N03G Spice Model v1.0 Last Revised 24/1/03 * .SUBCKT ZXM62N03G 3 4 5 *----connections----D-G-S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RIN 2 8 200E6 RD 3 6 RDSMOD 0.051 RS 8 5 RDSMOD 0.0093 RL 3 5 35E6 C1 2 8 349E-12 C2 2 3 43E-12 C3 15 14 453E-12 C4 16 8 474E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=6.5 CBD=221E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.04 .MODEL DMOD1 D IS=2.6E-13 RS=0.058 BV=38 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5) .ENDS ZXM62N03G * *$ * *ZETEX ZXM62P02E6 Spice Model v1.0 Last Revised 9/8/05 * .SUBCKT ZXM62P02E6 30 40 50 *----connections----D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 11 RIN 2 8 200E6 RD 3 6 RDSMOD 0.04 RS 8 5 RDSMOD 0.025 RL 3 5 35E6 C1 2 8 390E-12 C3 15 14 450E-12 C4 16 8 550E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL MOSMOD PMOS VTO=-1.50 IS=1E-15 KP=3.8 CBD=245E-12 PB=1 LAMBDA=4.9E-2 .MODEL MOSMODS PMOS VTO=-1.20 IS=1E-15 KP=0.04 PB=1 .MODEL DMOD1 D IS=4E-12 RS=0.05 N=1.04 BV=23 TT=1e-8 .MODEL DMOD2 D CJO=206e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=4E-3 TC2=7E-6) .MODEL RMOD2 RES (TC1=2E-3 TC2=2.5E-6) .ENDS ZXM62P02E6 * *$ * *ZETEX ZXM62P03E6 Spice Model v1.0 Last Revised 26/7/05 * .SUBCKT ZXM62P03E6 30 40 50 *----connections----D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 6 RIN 2 8 200E6 RD 3 6 RDSMOD 0.07 RS 8 5 RDSMOD 0.037 RL 3 5 35E6 C1 2 8 390E-12 C3 15 14 450E-12 C4 16 8 550E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL MOSMOD PMOS VTO=-2.22 IS=1E-15 KP=4.1 CBD=245E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-1.9 IS=1E-15 KP=0.04 PB=1 .MODEL DMOD1 D IS=4E-13 RS=0.05 N=1.04 BV=36 TT=1e-8 .MODEL DMOD2 D CJO=206e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=4E-3 TC2=7E-6) .MODEL RMOD2 RES (TC1=2.2E-3 TC2=3E-6) .ENDS ZXM62P03E6 * *$ * *ZETEX ZXM64N02X Spice Model v1.0 Last Revised 10/01/2005 * .SUBCKT ZXM64N02X 3 4 5 *----connections----D-G-S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 1.7 RIN 2 8 200E6 RD 3 6 RDSMOD 0.02 RS 8 5 RDSMOD 0.004 RL 3 5 35E6 C1 2 8 1000E-12 C2 2 3 130E-12 C3 15 14 1150E-12 C4 16 8 1100E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 20 2 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=1.29 IS=1E-15 KP=35 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.35 .MODEL DMOD1 D IS=6E-13 RS=0.025 BV=22 CJO=750E-12 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=2.3E-3 TC2=0.8E-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS ZXM64N02X * *$ * *ZETEX ZXM64P03X Spice Model v1.1 Last Revised 11/7/05 * .SUBCKT ZXM64P03X 3 4 5 *----connections----D G S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 41 2 9 RIN 2 8 200E6 RD 31 6 RDSMOD 0.02 RS 8 51 RDSMOD 0.015 RL 3 5 35E6 C1 2 8 810E-12 C3 15 14 1050E-12 C4 16 8 1150E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 31 1E-9 LG 4 41 1E-9 LS 5 51 1E-9 .MODEL MOSMOD PMOS VTO=-2.4 IS=1E-15 KP=8 CBD=512E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD1 D IS=6E-13 RS=0.02 N=1.01 TT=1e-8 .MODEL DMOD2 D CJO=430e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=1.5E-5) .ENDS ZXM64P03X * *$ * *ZETEX ZXM66P02N8 Spice Model v2.0 Last revision 15/3/07 * .SUBCKT ZXM66P02N8 3 4 5 *----connections----D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 41 2 4.7 RIN 2 8 200E6 RD 31 6 RDSMOD 0.001 RS 8 51 RDSMOD 0.009 RL 3 5 350E6 C1 2 8 1435E-12 C2 3 2 940E-12 C3 15 14 4758E-12 C4 16 8 5008E-12 D1 3 5 DMOD1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 31 1.3E-9 LG 4 41 1.2E-9 LS 5 51 1.2E-9 .MODEL MOSMOD PMOS VTO=-1.26 IS=1E-15 KP=30.5 PB=1 LAMBDA=4.9E-2 .MODEL MOSMODS PMOS VTO=-.75 IS=1E-15 KP=0.15 PB=1 .MODEL DMOD1 D IS=2.5E-11 RS=0.005 N=1.01 IKF=.2 TT=1e-8 BV=25 CJO=5400E-12 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-0.75 VOFF=1.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.75 VOFF=-0.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-4.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-4.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=3E-6) .MODEL RMOD2 RES (TC1=1.195E-3 TC2=3E-6) .ENDS * *$ * *ZETEX ZXM66P03N8 Spice Model v1.0 Last Revised 31/10/07 * .SUBCKT ZXM66P03N8 3 4 5 *----connections----D G S * M1 6 2 8 8 MOSMOD M2 6 41 8 8 MOSMODS RG 41 2 5 RIN 2 8 100E6 RD 31 6 RMOD1 0.005 RS 8 51 RMOD1 0.018 RL 3 5 350E6 C1 2 8 800E-12 C2 6 2 900E-12 C3 15 14 3300E-12 C4 16 8 2000E-12 D1 3 5 DMOD1 Egt1 42 41 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 31 8 1 LD 3 31 1.3E-9 LG 4 42 1.2E-9 LS 5 51 1.2E-9 .MODEL MOSMOD PMOS VTO=-2.33 IS=1E-15 KP=50 CBD=1E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-1.75 IS=1E-15 KP=10 PB=1 .MODEL DMOD1 D IS=1.2E-12 RS=0.012 TT=2.5e-8 BV=35 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=1.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=3E-3 TC2=8E-6) .MODEL RMOD2 RES (TC1=3E-3 TC2=2E-6) .ENDS ZXM66P03N8 * *$ * *DIODES_INC_SPICE_MODEL ZXMC10A816N8 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Sep2014 *VERSION=1 ** Imported from: C:UserssuppuluriDesktopXMC10A816N8XMC10A816.txt ** PINS: 1=S1 , 2=G1, 3=S2, 4=G2, 5=D21, 6=D22, 7=D11, 8=D12 .SUBCKT ZXMC10A816N8 D11 G1 S1 D21 G2 S2 D12 D22 *NMOS M1 1 2 3 3 Nmod1 RD D11 1 Rmod1 90E-3 RS 23 3 Rmod1 84E-3 RG G1 22 10 RIN G1 23 2E11 RDS D11 23 2E9 CGS 2 3 370E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 380E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 D11 DSUB EL 2 22 1 3 0.0035 LS S1 23 2E-9 RL S1 S2 3E+10 .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.45 TOX=11E-8 NSUB=2.83E+15 KP=50 NFS=1E+12 IS=1E-15 N=10) .MODEL DCGD D (CJO = 8E-12 VJ = 0.6 M = 0.33 T_ABS=25) .MODEL DSUB D (IS =5E-12 N=1.08 RS=0.02 BV=105 CJO=200E-12 VJ=0.53 M=0.55 TT=40E-9 IKF=200m) .MODEL Rmod1 RES (TC1=1E-3 TC2=6E-6) *PMOS M2 4 5 6 6 Pmod1 RD2 D21 4 Rmod2 130E-3 RS2 53 6 Rmod2 84E-3 RG2 G2 52 240 RIN2 G2 53 2E11 RDS2 D21 53 2E9 CGS2 5 6 500E-12 EGD2 16 0 4 5 1 VFB2 18 0 0 FFB2 4 5 VFB2 1 CGD2 17 18 600E-12 R12 17 0 1 D12 16 17 DLIM DDG2 19 18 DCGD2 R22 16 19 1 D22 19 0 DLIM DSD2 D21 53 DSUB2 EL2 5 52 4 6 .0003 RL2 S2 53 3 LS2 S2 53 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-3.4 TOX=11E-8 NSUB=3.56E+16 KP=60 NFS=.1E+12 IS=1E-15 N=10) .MODEL DCGD2 D (CJO = 240E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB2 D (IS=1E-12 N=1 RS=0.012 BV=105 CJO=100E-12 VJ=0.45 M=0.33 TT=40E-9 IKF=140m TRS1=1.5m) .MODEL Rmod2 RES (TC1=2.6e-3 TC2=3E-6) *common model for PMOS and NMOS .MODEL DLIM D (IS=100U N=1 T_ABS=25) Rdrain1 D11 D12 .001m Rdrain2 D21 D22 .001m .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- ZXMC3A16DN8Q Spice Model ---------- *NMOS .SUBCKT ZXMC3A16DN8Q_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008283 RS 30 3 0.0001 RG 20 2 1.48 CGS 2 3 7.099E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 + TOX = 6E-008 NSUB = 1E+016 KP = 11 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 6.5E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 2.83E-011 N = 2.634E-011 RS = 0.5668 BV = 33.64 + CJO = 8.846E-011 VJ = 0.8 M = 0.6 TT = 8.9E-009 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT ZXMC3A16DN8Q_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01164 RS 30 3 0.001 RG 20 2 2.06 CGS 2 3 6.695E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.4 KAPPA = 19.32 VTO = -1.578 .MODEL DCGD D CJO = 8.176E-010 VJ = 0.7998 M = 0.6 .MODEL DSUB D IS = 5.017E-010 N = 1.116 RS = 0.09234 BV = 36.49 + CJO = 1E-010 VJ = 0.8 M = 0.6 TT = 1.06E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes ZXMC3A16DN8Q Spice Model v1.0J Last Revised 2018/12/03 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=S1 *2=G1 *3=S2 *4=G2 *5=D2 *6=D2 *7=D1 *8=D1 * .SUBCKT ZXMC3AMC 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.28 M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.13 RG11 2 12 5 RIN11 12 13 1E12 RD11 11 15 Rmod1 0.08 RS11 13 14 1E-6 RL11 13 15 3E9 C11 12 13 8.5E-12 C12 12 15 3E-12 D11 13 15 Dmod1 RP11 15 7 1E-6 RP12 15 8 1E-6 LS11 14 1 11.2E-9 .MODEL Nmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rmod1 RES (TC1=4.2e-3 TC2=1E-5) *Dev2 P-channel M21 21 22 23 23 Pmod2 L=1.2E-6 W=0.33 M22 23 22 23 21 Nmod2 L=1.4E-6 W=0.19 RG21 4 22 10 RIN21 22 23 1E9 RD21 21 25 Rmod2 0.05 RS21 23 24 1E-6 RL21 23 25 3E9 C21 22 23 8.5E-12 C22 22 25 5E-12 D21 25 23 Dmod2 RP21 25 5 1E-6 RP22 25 6 1E-6 LS21 24 3 1.2E-9 .MODEL Pmod2 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod2 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod2 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Rmod2 RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=02JUN2010 *VERSION=1 *PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1 * .SUBCKT ZXMD63C03X 1 2 3 4 5 6 7 8 *Device1 M11 13 12 11 11 Mmod11 M12 13 12 11 11 Mmod12 R11 12 2 5 R12 12 11 2E9 R13 13 14 Rmod11 0.065 R14 11 15 Rmod11 0.012 R15 14 15 300E6 C11 12 11 269E-12 C12 12 14 33E-12 C13 16 17 300E-12 C14 18 11 365E-12 D11 15 14 Dmod11 S11 12 17 13 12 Smod11 S12 17 19 13 12 Smod12 S13 19 18 12 11 Smod13 S14 18 12 12 11 Smod14 E11 19 11 12 11 1 E12 16 11 14 11 1 L11 15 1 1E-9 L12 14 20 1E-9 R16 20 7 1E-3 R17 20 8 1E-3 * Device2 M21 23 22 21 21 Mmod21 R21 22 4 18 R22 23 21 300E6 R25 21 22 2E9 C21 22 21 450E-12 C22 23 22 35E-12 D21 23 21 Dmod21 L21 21 3 1E-9 L22 23 24 1E-9 R23 24 5 1E-3 R24 24 6 1E-3 * .MODEL Mmod11 NMOS VTO=2.2 IS=1E-15 KP=5 CBD=170E-12 LAMBDA=4.9E-3 .MODEL Mmod12 NMOS VTO=1.8 IS=1E-15 KP=0.033 .MODEL Dmod11 D IS=2E-13 RS=0.075 BV=38 IBV=1E-6 TT=21e-9 .MODEL Smod11 VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL Smod12 VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL Smod13 VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL Smod14 VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL Rmod11 RES (TC1=3E-3 TC2=2E-5) .MODEL Mmod21 PMOS VTO=-2.32 RS=0.09 RD=0.045 KP=4.2 +CBD=480E-12 LAMBDA=4.9E-3 .MODEL Dmod21 D IS=4E-13 N=1.04 IKF=295E-3 RS=94E-3 .ENDS * *$ *ZETEX ZXMD63N02X Spice Model v1.0 Last Revised 3/7/00 * .SUBCKT ZXMD63N02X 3 4 5 * D G S M1 3 2 5 5 M63N02 RG 4 2 18 RL 3 5 1E9 C1 2 5 700E-12 C2 3 2 50E-12 D1 5 3 D63N02 * .MODEL M63N02 NMOS VTO=1.40 RS=0.04 RD=0.02 KP=15 +CBD=600E-12 LAMBDA=8.7E-3 .MODEL D63N02 D IS=4E-12 N=1.04 IKF=82E-3 RS=105E-3 .ENDS ZXMD63N02X * *$ * *ZETEX ZXMD63N03X Spice Model v1.1 Last Revised 23/1/03 * .SUBCKT ZXMD63N03X 3 4 5 *----connections----D-G-S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RIN 2 8 200E6 RD 3 6 RDSMOD 0.065 RS 8 5 RDSMOD 0.012 RL 3 5 35E6 C1 2 8 269E-12 C2 2 3 33E-12 C3 15 14 349E-12 C4 16 8 365E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=5 CBD=170E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.033 .MODEL DMOD1 D IS=2E-13 RS=0.075 BV=38 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5) .ENDS ZXMD63N03X * *$ * *ZETEX ZXMD63P02X Spice Model v1.0 Last Revised 18/8/00 * .SUBCKT ZXMD63P02X 3 4 5 * D G S M1 3 2 5 5 M63P02 RG 4 2 18 RL 3 5 1E9 C1 2 5 700E-12 C2 3 2 55E-12 D1 3 5 D63P02 * .MODEL M63P02 PMOS VTO=-1.37 RS=0.08 RD=0.04 KP=8 +CBD=700E-12 LAMBDA=9E-3 .MODEL D63P02 D IS=4E-12 N=1.04 IKF=44E-3 RS=96E-3 .ENDS ZXMD63P02X * *$ * *ZETEX ZXMD63P03X Spice Model v1.0 Last Revised 18/8/00 * .SUBCKT ZXMD63P03X 3 4 5 * D G S M1 3 2 5 5 M63P03 RG 4 2 18 RL 3 5 1E9 C1 2 5 450E-12 C2 3 2 35E-12 D1 3 5 D63P03 * .MODEL M63P03 PMOS VTO=-2.32 RS=0.09 RD=0.045 KP=4.2 +CBD=480E-12 LAMBDA=4.9E-3 .MODEL D63P03 D IS=4E-13 N=1.04 IKF=295E-3 RS=94E-3 .ENDS ZXMD63P03X * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=18DEC2014 *VERSION=1 *PIN_ORDER ZXMHC10A07N8 * 1=N1G 8=P1G * 2=N1D/P1D 7=P1S/P2S * 3=N1S/P2S 6=N2D/P2D * 4=N2G 5=P2G * .SUBCKT ZXMHC10A07N8 1 2 3 4 5 6 7 8 X1 2 8 7 P10A13 X2 2 1 3 N10A07 X3 6 4 3 N10A07 X4 6 5 7 P10A13 .ENDS ZXMHC10A07N8 * .SUBCKT N10A07 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 200E-3 RG 20 22 2.6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 105E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 80E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6) .ENDS N10A07 * .SUBCKT P10A13 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 300E-3 RS 23 3 Rmod1 600E-3 RG 20 22 10 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 13E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 8E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .009 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-4 TOX=10.4E-8 NSUB=3.5E+14 KP=38 NFS=13.7E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 8E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.29E-12 N=1.01 RS=0.05 BV=105 CJO=20E-12 VJ=0.45 M=0.33 TT=14E-9 TRS1=2m IKF=.5) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.2e-3 TC2=1E-6) .ENDS P10A13 * * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=18DEC2014 *VERSION=1 *PIN_ORDER ZXMHC10A07T8 * 1=N1G 8=P1G * 2=N1D/P1D 7=P1S/P2S * 3=N1S/P2S 6=N2D/P2D * 4=N2G 5=P2G * .SUBCKT ZXMHC10A07T8 1 2 3 4 5 6 7 8 X1 2 8 7 P10A13 X2 2 1 3 N10A07 X3 6 4 3 N10A07 X4 6 5 7 P10A13 .ENDS ZXMHC10A07T8 * .SUBCKT N10A07 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 200E-3 RG 20 22 2.6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 105E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 80E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6) .ENDS N10A07 * .SUBCKT P10A13 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 300E-3 RS 23 3 Rmod1 600E-3 RG 20 22 10 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 13E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 8E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .009 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-4 TOX=10.4E-8 NSUB=3.5E+14 KP=38 NFS=13.7E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 8E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.29E-12 N=1.01 RS=0.05 BV=105 CJO=20E-12 VJ=0.45 M=0.33 TT=14E-9 TRS1=2m IKF=.5) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.2e-3 TC2=1E-6) .ENDS P10A13 * * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZXMHC3A01T8 Spice Model v1.0 Last Revised 8/7/05 * .SUBCKT ZXMHC3A01T8 51 52 53 54 55 56 57 58 *connections *51=pin1=G3 *52=pin2=S2,S3 *53=pin3=G2 *54=pin4=G1 *55=pin5=D1,D2 *56=pin6=S1,S4 *57=pin7=D3,D4 *58=pin8=G4 * L1 1 51 2.3e-9 L2a 62 2 1.3e-9 L2b 72 2 1.3e-9 L2c 2 52 1e-9 L3 3 53 2.3e-9 L4 4 54 2.3e-9 L5 5 55 1.5e-9 L6a 66 6 1.3e-9 L6b 76 6 1.3e-9 L6c 6 56 1e-9 L7 7 57 1.5e-9 L8 8 58 2.3e-9 M11 16 12 62 62 Nnmod M12 62 12 62 16 Npmod RG1 3 12 5 RIN1 12 62 1E12 RD1 5 16 Nrmod 0.08 RL1 5 62 3E9 C11 12 62 8.5E-12 C21 5 3 3E-12 D11 62 5 Ndmod M21 26 22 72 72 Nnmod M22 72 22 72 26 Npmod RG2 1 22 5 RIN2 22 72 1E12 RD2 7 26 Nrmod 0.08 RL2 7 72 3E9 C12 22 72 8.5E-12 C22 7 1 3E-12 D12 72 7 Ndmod M31 36 32 66 66 Ppmod M32 66 32 66 36 Pnmod RG3 4 32 10 RIN3 32 66 1E9 RD3 5 36 Prmod 0.05 RL3 5 66 3E9 C13 32 66 8.5E-12 C23 5 4 5E-12 D13 5 66 Pdmod M41 46 42 76 76 Ppmod M42 76 42 76 46 Pnmod RG4 8 42 10 RIN4 42 76 1E9 RD4 7 46 Prmod 0.05 RL4 76 7 3E9 C14 42 76 8.5E-12 C24 7 8 5E-12 D14 7 76 Pdmod .MODEL Nnmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 L=1.16E-6 W=0.28 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Npmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 L=1.3E-6 W=0.13 +TPG=-1 IS=1E-15 N=10) .MODEL Ndmod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Nrmod RES (TC1=4.2e-3 TC2=1E-5) .MODEL Ppmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 L=1.2E-6 W=0.33 +VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pnmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 L=1.4E-6 W=0.19 +TPG=-1 IS=1E-15 N=10) .MODEL Pdmod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Prmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=15FEB2011 *VERSION=1 *PIN_ORDER ZXMHC6A07T8 * 1=N1G 8=P1G * 2=N1D/P1D 7=P1S/P2S * 3=N1S/P2S 6=N2D/P2D * 4=N2G 5=P2G * .SUBCKT ZXMHC6A07N8 1 2 3 4 5 6 7 8 X1 2 8 7 P6A13 X2 2 1 3 N6A07 X3 6 4 3 N6A07 X4 6 5 7 P6A13 .ENDS ZXMHC6A07N8 * .SUBCKT N6A07 3 4 5 M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34 M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 2 15E-12 D1 5 3 Dmod1 .MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS N6A07 * .SUBCKT P6A13 3 4 5 M1 6 2 5 5 Pmod L=1.2E-6 W=0.39 M2 5 2 5 6 Nmod L=1.4E-6 W=0.195 RG 4 2 3 RIN 2 5 1E9 RD 3 6 Rdmod 0.25 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16 +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3 +CJO=3.514e-11 BV=66) .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5) .ENDS P6A13 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=14FEB2011 *VERSION=1 *PIN_ORDER ZXMHC6A07T8 * 1=G3 8=G4 * 2=S2S3 7=D3D4 * 3=G2 6=S1S4 * 4=G1 5=D1D2 * .SUBCKT ZXMHC6A07T8 1 2 3 4 5 6 7 8 X1 5 4 6 P6A13 X2 5 3 2 N6A07 X3 7 1 2 N6A07 X4 7 8 6 P6A13 .ENDS ZXMHC6A07T8 * .SUBCKT N6A07 3 4 5 M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34 M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 2 15E-12 D1 5 3 Dmod1 .MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS N6A07 * .SUBCKT P6A13 3 4 5 M1 6 2 5 5 Pmod L=1.2E-6 W=0.39 M2 5 2 5 6 Nmod L=1.4E-6 W=0.195 RG 4 2 3 RIN 2 5 1E9 RD 3 6 Rdmod 0.25 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16 +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3 +CJO=3.514e-11 BV=66) .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5) .ENDS P6A13 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=15FEB2011 *VERSION=1 *PIN_ORDER * 1=G3 8=G4 * 2=G2 7=D3D4 * 3=S1S2 6=D2S3 * 4=G1 5=D1S4 * .SUBCKT ZXMHN6A07T8 1 2 3 4 5 6 7 8 X1 5 4 3 N6A07 X2 6 2 3 N6A07 X3 7 1 6 N6A07 X4 7 8 5 N6A07 .ENDS ZXMHN6A07T * .SUBCKT N6A07 3 4 5 M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34 M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 2 15E-12 D1 5 3 Dmod1 .MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS N6A07 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=16/10/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN0545G4 3 4 5 M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3E-3 .MODEL DMOD2 D CJO=25E-12 IS=1E-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5E-3 TC2=3.3E-6) .ENDS * *$ *DIODES_INC_SPICE_MODEL ZXMN10A07F N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=18Dec2014 *VERSION=1 .SUBCKT ZXMN10A07F 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 200E-3 RG 20 22 2.6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 105E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 80E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6) .ENDS .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL ZXMN10A07Z N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1Jul2014 *VERSION=1 .SUBCKT ZXMN10A07Z 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 200E-3 RG 20 22 2.6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 105E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 80E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6) .ENDS *ZETEX ZXMN10A08DN8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMN10A08DN8 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1.5E-6 W=0.45 RG 4 2 3.2 RIN 2 5 1E12 RD 3 6 Rdmod 0.14 RL 6 5 10E9 C1 2 5 30E-12 C2 3 4 10E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05 +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=101) .MODEL Rdmod RES (TC1=9.5e-3 TC2=2.5E-5) .ENDS ZXMN10A08DN8 * *$ * *ZETEX ZXMN10A08E6 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMN10A08E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1.5E-6 W=0.45 RG 4 2 3.2 RIN 2 5 1E12 RD 3 6 Rdmod 0.14 RL 6 5 10E9 C1 2 5 30E-12 C2 3 4 10E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05 +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=101) .MODEL Rdmod RES (TC1=9.5e-3 TC2=2.5E-5) .ENDS ZXMN10A08E6 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/09 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN10A08G 1 2 3 M11 20 21 22 22 Nnmod1 L=1E-6 W=0.6 M12 22 21 22 20 Pnmod1 L=1.5E-6 W=0.45 RG1 21 27 3.2 RIN1 21 22 1E12 RD1 20 24 Rnmod1 0.14 RS1 22 23 1E-6 RL1 23 24 10E9 C11 21 22 65E-12 C12 20 21 10E-12 D1 23 24 Dnmod1 LD1 1 24 1.0E-9 LG1 2 27 2.3E-9 LS1 3 23 2.3E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05 +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dnmod1 D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=110) .MODEL Rnmod1 RES (TC1=9.5e-3 TC2=2.5E-5) .ENDS ZXMN10A08G * *$ *ZETEX ZXMN10A09K Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMN10A09K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.7 M2 5 2 5 6 Pmod L=1.5E-6 W=1.27 RG 4 2 0.7 RIN 2 5 1E12 RD 3 6 Rdmod 0.19 RL 6 5 10E9 C1 2 5 85E-12 C2 3 4 28E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.45 +KP=2.5E-5 RS=.0053 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5.6E-12 RS=.016 IKF=0.095 TRS1=1.5e-3 +CJO=338e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS ZXMN10A09K * *$ * *ZETEX ZXMN10A11G Spice Model v2.0 Last Revised 11/2/05 * * .SUBCKT ZXMN10A11G 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.48 M2 5 2 5 6 Pmod L=1.5E-6 W=0.31 RG 4 2 2.9 RIN 2 5 1E12 RD 3 6 Rdmod 0.28 RL 6 5 10E9 C1 2 5 21E-12 C2 3 4 6.9E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.22 +KP=1.42E-5 RS=.023 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.6E-12 RS=0.03 IKF=0.047 TRS1=1.5e-3 +CJO=83e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS ZXMN10A11G * *$ * *ZETEX ZXMN10A11K Spice Model v2.0 Last Revised 24/10/07 * * .SUBCKT ZXMN10A11K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.48 M2 5 2 5 6 Pmod L=1.5E-6 W=0.31 RG 4 2 2.9 RIN 2 5 1E12 RD 3 6 Rdmod 0.28 RL 6 5 10E9 C1 2 5 21E-12 C2 3 4 6.9E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.22 +KP=1.42E-5 RS=.023 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.6E-12 RS=0.03 IKF=0.047 TRS1=1.5e-3 +CJO=83e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS ZXMN10A11K * *$ * *ZETEX ZXMN10A25G Spice Model v1.0 Last Revised 24/10/07 * .SUBCKT ZXMN10A25G 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.75 M2 5 2 5 6 Pmod L=1.5E-6 W=1.3 RG 4 2 1.5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 10E9 C1 2 5 200E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=10E-8 NSUB=1E17 VTO=3.7 +KP=2E-5 RS=0.01 NFS=7e10 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=10E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-12 RS=.025 TRS1=1.5e-3 +CJO=240e-12 VJ=0.6 M=0.54 TT=5e-9 BV=101) .MODEL Rdmod RES (TC1=7.5e-3 TC2=2.3E-5) .ENDS ZXMN10A25G * *$ * *ZETEX ZXMN10A25K Spice Model v1.0 Last Revised 24/10/07 * .SUBCKT ZXMN10A25K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.75 M2 5 2 5 6 Pmod L=1.5E-6 W=1.3 RG 4 2 1.5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 10E9 C1 2 5 200E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=10E-8 NSUB=1E17 VTO=3.7 +KP=2E-5 RS=0.01 NFS=7e10 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=10E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-12 RS=.025 TRS1=1.5e-3 +CJO=240e-12 VJ=0.6 M=0.54 TT=5e-9 BV=101) .MODEL Rdmod RES (TC1=7.5e-3 TC2=2.3E-5) .ENDS ZXMN10A25K * *$ * *ZETEX ZXMN10B08E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN10B08E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.75 M2 5 2 5 6 Pmod L=1.5E-6 W=0.75 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.19 RL 3 5 10E9 C1 2 5 100E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=2E17 VTO=3.12 +KP=2.2E-5 RS=.015 NFS=6E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3 +CJO=300e-12 TT=5e-9 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS * *$ * *DIODES_INC_SPICE_MODEL ZXMN15A25K *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20Dec2011 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT zxmn15a27k 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 300E-3 RS 23 3 Rmod1 180E-3 RG 20 22 2 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 150E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 240E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.001 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=20E-8 NSUB=2.8E+15 KP=9.5 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 140E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1.85E-12 N=1.085 RS=0.022 BV=155 CJO=330E-12 VJ=0.42 M=0.5 TT=150E-9 TRS1=2.6E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=8e-3 TC2=8E-6) .ENDS .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL ZXMN20B28K *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=23Apr2014 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT ZXMN20B28K 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 530E-3 RS 23 3 Rmod1 120E-3 RG 20 22 20 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 450E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 800E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.00001 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.2 TOX=5E-8 NSUB=1E+15 KP=150 NFS=15E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 130E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1.5E-12 N=1 RS=0.01 BV=210 IKF=.12 CJO=350E-12 VJ=0.42 M=0.5 TT=130E-9 TRS1=1.2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.2e-3 TC2=8E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZXMN2A01E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A01E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.46 M2 5 20 5 6 Pmod L=1.3E-6 W=0.22 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rmod1 0.036 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod2 RES (TC1=-3e-4 TC2=0) .ENDS * *$ * *ZETEX ZXMN2A01F Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A01F 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.46 M2 5 20 5 6 Pmod L=1.3E-6 W=0.22 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rmod1 0.036 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod2 RES (TC1=-3e-4 TC2=0) .ENDS ZXMN2A01F * *$ * *ZETEX ZXMN2A02N8 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A02N8 30 40 50 *---connections---D-G-S M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.0045 RS 7 5 Rdmod 0.01 RL 3 5 3E9 C1 2 5 10E-12 C2 3 2 5E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16 +VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9 +CJO=450e-12 BV=22) .MODEL Rdmod RES (TC1=3e-3 TC2=6E-6) .ENDS * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=22/02/2005 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMN2A02X8 30 40 50 M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.0045 RS 7 5 Rdmod 0.01 RL 3 5 3E9 C1 2 5 10E-12 C2 3 2 5E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16 +VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9 +CJO=450e-12 BV=22) .MODEL Rdmod RES (TC1=3e-3 TC2=6E-6) .ENDS * *$ *ZETEX ZXMN2A03E6 Spice Model v1.0 Last Revised 11/08/05 * .SUBCKT ZXMN2A03E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rmod1 0.04 RL 3 5 3E9 C1 2 5 1.5E-10 C2 3 4 2.5E-10 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1.45 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=45E-9 NSUB=4.09E16 UO=929) +VTO=0.9 KP=34E-6 GAMMA=1.52 PHI=0.77 RS=0.02 KAPPA=0.01) .MODEL Pmod PMOS (LEVEL=3 L=0.6E-6 W=0.8 TOX=70E-9 NSUB=4.09E16 UO=373) .MODEL Dbodymod D (IS=2E-11 N=1 IKF=3 RS=0.05 TRS1=1E-5 TRS2=3E-5 XTI=0.1) .MODEL Rmod1 RES (TC1=0 TC2=0) .MODEL Rmod2 RES (TC1=3E-4 TC2=1E-7) .ENDS ZXMN2A03E6 * *$ * *ZETEX ZXMN2A14F Spice Model v1.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A14F 30 40 50 *----connections-----D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.74 M2 5 20 5 6 Pmod L=1.3E-6 W=0.45 RG 4 2 3.5 RIN 2 5 1E12 RD 3 6 Rmod1 0.015 RL 3 5 3E12 C1 2 5 8.5E-12 C2 3 4 3.5E-12 D1 5 3 Dmod1 Egt1 20 2 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=5E16 +VTO=1.25 KP=10E-5 RS=.027 NFS=1E9 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-10 RS=.054 IKF=0.04 TRS1=1.5e-3 +CJO=600e-12 BV=23) .MODEL Rmod1 RES (TC1=8.2e-3 TC2=2.3E-5) .MODEL Rmod2 RES (TC1=-3E-4 TC2=0E-6) .ENDS ZXMN2A14F * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=S1 *2=G1 *3=S2 *4=G2 *5=D2 *6=D2 *7=D1 *8=D1 * .SUBCKT ZXMN2AMC 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.46 M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.22 RG11 2 16 5 RIN11 12 13 1E12 RD11 11 15 Rmod11 0.036 RS11 13 14 1E-6 RL11 13 15 3E9 C11 12 13 8.5E-12 C12 12 15 3E-12 Egt11 16 12 17 13 1 Vgt11 13 18 1 Igt11 13 17 1 Rgt11 17 18 Rmod12 1 D11 13 15 Dmod1 RP11 15 7 1E-6 RP12 15 8 1E-6 LS11 14 1 1.2E-9 *Dev2 N-channel M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.46 M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.22 RG21 4 26 5 RIN21 22 23 1E12 RD21 21 25 Rmod11 0.036 RS21 23 24 1E-6 RL21 23 25 3E9 C21 22 23 8.5E-12 C22 22 25 3E-12 Egt21 26 22 27 23 1 Vgt21 23 28 1 Igt21 23 27 1 Rgt21 27 28 Rmod12 1 D21 23 25 Dmod1 RP21 25 5 1E-6 RP22 25 6 1E-6 LS21 24 3 1.2E-9 .MODEL Nmod1 NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod11 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod12 RES (TC1=-3e-4 TC2=0) .ENDS * *$ * *Zetex ZXMN2B01F Spice Model v1.0 Last Revised 5/12/07 * .SUBCKT ZXMN2B01F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.55 M2 5 2 5 6 Pmod L=1.2E-6 W=0.22 RG 4 22 4.2 RIN 2 5 1E12 RD 3 6 Rmod1 0.05 RL 3 5 3E9 C1 2 5 10E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.66 +KP=7E-5 RS=.025 KAPPA=0.07 NFS=2E11 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=3e-3 TT=0.6E-8 +CJO=115e-12 BV=23) .MODEL Rmod1 RES (TC1=4.6e-3 TC2=0.9E-5) .MODEL Rmod2 RES (TC1=-1.4e-3 TC2=0E-5) .ENDS ZXMN2B01F * *$ * * (c) 2007 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *Zetex ZXMN2B03E6 Spice Model v1.0 Last Revised 7/12/07 * .SUBCKT ZXMN2B03E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.83 M2 5 2 5 6 Pmod L=1.2E-6 W=0.67 RG 4 22 1.5 RIN 2 5 1E12 RD 3 6 Rmod1 0.015 RL 3 5 3E9 C1 2 5 10E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.8 +KP=7E-5 RS=.020 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-11 RS=.05 IKF=.5 TT=0.6E-8 +CJO=200e-12 BV=23) .MODEL Rmod1 RES (TC1=8e-3 TC2=0.9E-5) .MODEL Rmod2 RES (TC1=-1.2e-3 TC2=-1E-6) .ENDS ZXMN2B03E6 * *$ * * (c) 2007 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX ZXMN2B14FH Spice Model v1.0 Last Revised 30/11/07 * .SUBCKT ZXMN2B14FH 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.1 M2 5 2 5 6 Pmod L=1E-6 W=0.55 RG 4 22 2.8 RIN 2 5 1E12 RD 3 6 Rmod1 0.03 RL 3 5 3E9 C1 2 5 300E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.84 +KP=3.7E-5 RS=.006 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-11 RS=.03 IKF=.5 TRS1=3e-3 TT=0.6E-8 +CJO=200e-12 BV=23) .MODEL Rmod1 RES (TC1=4.2e-3 TC2=0.8E-5) .MODEL Rmod2 RES (TC1=-0.9e-3 TC2=0E-5) .ENDS ZXMN2B14FH * *$ * *DIODES_INC_SPICE_MODEL ZXMN2F30FH N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=27Oct2014 *VERSION=1 .SUBCKT ZXMN2F30FH 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 15E-3 RS 23 3 Rmod1 10E-3 RG 20 22 10 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 20E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 36E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.95 KP=90 NFS=8E12 TOX=3.5E-8 NSUB=1E17 IS=1E-15 N=10) .MODEL DCGD D (CJO = 16E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.003 BV=22 CJO=10E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-6 TC2=6E-6) .ENDS .SIMULATOR DEFAULT .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *---------- ZXMN2F30FHQ Spice Model ---------- .SUBCKT ZXMN2F30FHQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes ZXMN2F30FHQ Spice Model v1.0 Last Revised 2016/7/22 * *Zetex ZXMN2F34FH Spice Model v1.0 Last Revised 31/07/08 * .SUBCKT ZXMN2F34FH 3 4 5 *------connections-------D-G-S M1 6 20 8 8 Nmod RG 4 2 7 RD 3 6 Rmod1 0.025 RS 8 5 Rmod1 0.0033 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 200E-12 C2 2 3 40E-12 C3 15 14 270E-12 C4 16 8 230E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=1.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=1.574 KP=16 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.026 CJO=320E-12 VJ=0.55 M=0.45 TT=1e-9 TRS1=1e-4 BV=22) .MODEL Rmod1 RES (TC1=3.1e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-1.9e-3 TC2=-6E-6) .ENDS ZXMN2F34FH * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *ZETEX ZXMN3A01E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN3A01E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.28 M2 5 2 5 6 Pmod L=1.3E-6 W=0.13 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5) .ENDS ZXMN3A01E6 * *$ * *ZETEX ZXMN3A01F Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN3A01F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.28 M2 5 2 5 6 Pmod L=1.3E-6 W=0.13 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5) .ENDS ZXMN3A01F * *$ * *ZETEX ZXMN3A02N8 Spice Model v2.0 Last Revised 22/2/05 * * .SUBCKT ZXMN3A02N8 30 40 50 *----connections----D-G-S M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 3 RIN 2 5 1E12 RD 3 6 Rdmod 0.001 RS 7 5 Rdmod 0.018 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 2 3E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 VTO=2 +KP=5E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=4E-12 RS=.014 IKF=3.6 TRS1=1.5e-3 +CJO=1070e-12 BV=33) .MODEL Rdmod RES (TC1=4e-3 TC2=1E-5) .ENDS * *$ * *ZETEX ZXMN3A02X8 Spice Model v2.0 Last Revised 22/2/05 * * .SUBCKT ZXMN3A02X8 30 40 50 *----connections----D-G-S M1 6 2 7 7 Nmod M2 7 2 7 6 Pmod RG 4 2 3 RIN 2 5 1E12 RD 3 6 Rdmod 0.001 RS 7 5 Rdmod 0.018 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 2 3E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 L=1.16E-6 W=2.3 VTO=2 +KP=5E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 L=1.3E-6 W=1.3 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=4E-12 RS=.014 IKF=3.6 TRS1=1.5e-3 +CJO=1070e-12 BV=33) .MODEL Rdmod RES (TC1=4e-3 TC2=1E-5) .ENDS * *$ * *ZETEX ZXMN3A03E6 Spice Model v2.0 Last revision 15/03/07 * .SUBCKT ZXMN3A03E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rmod1 0.04 RL 3 5 1E8 C1 2 5 2E-11 C2 3 4 1E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1.0 Vgt1 5 22 1.0 Igt1 5 21 1.0 Rgt 21 22 Rmod2 1.8 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=60E-9 NSUB=2.58E16 UO=1022) +VTO=1.2 KP=65E-6 GAMMA=1.61 PHI=0.74 RS=0.035 KAPPA=0.03 NFS=2.0E12 RD=0.03) .MODEL Pmod PMOS (LEVEL=3 L=1.2E-6 W=1.0 TOX=64E-9 NSUB=2.58E16 UO=396) .MODEL Dbodymod D (IS=1.5E-10 N=1.13 RS=0.06 IKF=0.3 XTI=0.1 TRS1=6E-3 +TIKF=6E-2 CJO=1E-12) .MODEL Rmod1 RES (TC1=1E-5 TC2=1E-6) .MODEL Rmod2 RES (TC1=4E-4 TC2=1E-6) .ENDS ZXMN3A03E6 * *$ * *ZETEX ZXMN3A04DN8 Spice Model v2.0 Last Revised 15/03/07 * .SUBCKT ZXMN3A04DN8 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1.0 RIN 2 5 1E12 RD 3 6 Rmod1 0.01 RL 3 5 1E8 C1 2 5 6.2E-10 C2 3 4 1.5E-10 D1 5 3 Dbodymod Egt1 2 20 21 5 1.0 Vgt1 5 22 1.0 Igt1 5 21 1.0 Rgt 21 22 Rmod2 2.3 LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=2.183 TOX=64E-9 NSUB=3.07E16 +UO=389 RS=0.02 XJ=1.6e-6) .MODEL Pmod PMOS (LEVEL=3 L=1.2E-6 W=2.183 TOX=64E-9 NSUB=1.07E16 +UO=429 TPG=-1) .MODEL Dbodymod D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 +XTI=0.1) .MODEL Rmod1 RES (TC1=1E-4 TC2=1E-6) .MODEL Rmod2 RES (TC1=-3E-4 TC2=-5E-6) .ENDS ZXMN3A04DN8 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN3A04K 1 2 3 M11 20 21 22 22 Nnmod1 L=0.7E-6 W=2.183 M12 22 21 22 20 Pnmod1 L=1.2E-6 W=2.183 RG1 26 27 1.1 RIN1 21 22 1E12 RD1 20 24 Rnmod1 0.01 RS1 22 23 1E-6 RL1 23 24 1E8 C11 21 22 11E-10 C12 20 21 1E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1 Igt1 22 30 1 Rgt1 30 31 Rnmod2 2.3 LD1 1 24 1.3E-9 LG1 2 27 2.4E-9 LS1 3 23 2.4E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=64E-9 NSUB=3.07E16 UO=389 RS=0.02 XJ=1.6e-6) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=64E-9 NSUB=1.07E16 UO=429 TPG=-1) .MODEL Dnmod1 D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 XTI=0.1) .MODEL Rnmod1 RES (TC1=10.7E-3 TC2=-4E-5) .MODEL Rnmod2 RES (TC1=-2.6E-3 TC2=-5E-6) .ENDS * *$ *ZETEX ZXMN3A06DN8 Spice Model v2.0 Last revision 15/3/07 * .SUBCKT ZXMN3A06DN8 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.5 M2 5 2 5 6 Pmod L=1.3E-6 W=0.65 RG 4 2 2.5 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 300E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 55 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.5 +KP=1.25E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=158e-12 BV=33 TT=16e-9) .MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5) .ENDS ZXMN3A06DN8 * *$ * *ZETEX ZXMN3A14F Spice Model v1.0 Last revision 31/5/06 * .SUBCKT ZXMN3A14F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.76 M2 5 2 5 6 Pmod L=1.3E-6 W=0.35 RG 4 2 4.5 RIN 2 5 1E12 RD 3 6 Rmod 0.04 RS 5 55 Rmod 0.015 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 55 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E16 VTO=2.13 +KP=2.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=150e-12 BV=33 TT=12e-9) .MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5) .ENDS ZXMN3A14F * *$ * *---------- ZXMN3A14FTA Spice Model ---------- .SUBCKT ZXMN3A14FQTA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02679 RS 30 3 0.001 RG 20 2 1.23 CGS 2 3 3.56E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.548 + TOX = 6E-008 NSUB = 1E+016 KP = 9.886 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.613E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.518E-009 N = 1.343 RS = 0.04565 BV = 35 CJO = 2.328E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes ZXMN3A14FQTA Spice Model v1.0M Last Revised 2016/9/13 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=S1 *2=G1 *3=S2 *4=G2 *5=D2 *6=D2 *7=D1 *8=D1 * .SUBCKT ZXMN3AMC 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.28 M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.13 RG11 2 12 5 RIN11 12 13 1E12 RD11 11 15 Rdmod1 0.08 RS11 13 14 1E-6 RL11 13 15 3E9 C11 12 13 8.5E-12 C12 12 15 3E-12 D11 13 15 Dmod1 RP11 15 7 1E-6 RP12 15 8 1E-6 LS11 14 1 11.2E-9 *Dev2 N-channel M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.28 M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.13 RG21 4 22 5 RIN21 22 23 1E12 RD21 21 25 Rdmod1 0.08 RS21 23 24 1E-6 RL21 23 25 3E9 C21 22 23 8.5E-12 C22 22 25 3E-12 D21 23 25 Dmod1 RP21 25 5 1E-6 RP22 25 6 1E-6 LS21 24 3 11.2E-9 .MODEL Nmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rdmod1 RES (TC1=4.2e-3 TC2=1E-5) .ENDS * *$ *ZETEX ZXMN3B04N8 Spice Model v2.0 Last Revised 15/3/07 * .SUBCKT ZXMN3B04N8 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=2.9 M2 5 2 5 6 Pmod L=1.3E-6 W=1.6 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.01 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=3E17 VTO=1.32 +KP=15E-5 RS=.008 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-11 RS=.01 IKF=.5 TRS1=3e-3 +CJO=85e-12 BV=33) .MODEL Rdmod RES (TC1=5.2e-3 TC2=1E-5) .ENDS ZXMN3B04N8 * *$ * *ZETEX ZXMN3B14F Spice Model v1.0 Last revision 6/1/06 * .SUBCKT ZXMN3B14F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=0.7E-6 W=1.3 M2 5 2 5 6 Pmod L=1.3E-6 W=0.34 RG 4 2 2.8 RIN 2 5 1E12 RD 3 6 Rdmod 0.03 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=5E16 VTO=1.24 +KP=1.5E-5 RS=.01 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.7E-8 NSUB=2.58E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-11 RS=.025 IKF=.5 TRS1=3e-3 TT=1.2E-8 +CJO=200e-12 BV=33) .MODEL Rdmod RES (TC1=4.9e-3 TC2=1E-5) .ENDS ZXMN3B14F * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=210JUL2010 *VERSION=1 *------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1 * .SUBCKT ZXMN3F31DN8 P1 P2 P3 P4 P5 P6 P7 P8 *Device1 M11 106 103 108 108 Nmod R12 P2 102 2 R11 104 106 Rmod1 0.015 R13 108 105 Rmod1 0.005 R15 104 105 100E6 R16 102 105 100E6 D11 105 104 Dmod1 I11 108 121 1 V11 122 121 1 R17 122 108 Rmod2 1 E11 102 103 121 108 1 E12 113 108 102 108 1 E13 114 108 104 108 1 C11 102 108 549E-12 C12 102 104 129E-12 C13 115 114 390E-12 C14 116 108 400E-12 S11 102 115 114 113 SMOD1 S12 113 115 114 113 SMOD2 S13 116 113 113 108 SMOD3 S14 116 102 113 108 SMOD4 L11 P7 104 1E-9 L12 P1 105 1E-9 R18 P7 P8 0.001 *Device2 M21 206 203 208 208 Nmod R22 P4 202 2 R21 204 206 Rmod1 0.015 R23 208 205 Rmod1 0.005 R25 204 205 100E6 R26 202 205 100E6 D21 205 204 Dmod1 I21 208 221 1 V21 222 221 1 R27 222 208 Rmod2 1 E21 202 203 221 208 1 E22 213 208 202 208 1 E23 214 208 204 208 1 C21 202 208 549E-12 C22 202 204 129E-12 C23 215 214 390E-12 C24 216 208 400E-12 S21 202 215 214 213 SMOD1 S22 213 215 214 213 SMOD2 S23 216 213 213 208 SMOD3 S24 216 202 213 208 SMOD4 L21 P5 204 1E-9 L22 P3 205 1E-9 R28 P5 P6 0.001 * .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS ZXMN3F31DN8 * *$ *ZETEX ZXMN4A06G Spice Model v3.0 Last Revised 4/12/07 * .SUBCKT ZXMN4A06G 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.7 M2 5 2 5 6 Pmod L=1.3E-6 W=0.75 RG 4 2 1.6 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 75E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 55 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75 +KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3 +CJO=250e-12 BV=44 TT=17e-9) .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5) .ENDS ZXMN4A06G * *$ * *ZETEX ZXMN4A06K Spice Model v3.0 Last Revised 4/12/07 * .SUBCKT ZXMN4A06K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.7 M2 5 2 5 6 Pmod L=1.3E-6 W=0.75 RG 4 2 1.6 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 75E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 55 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75 +KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3 +CJO=250e-12 BV=44 TT=17e-9) .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5) .ENDS ZXMN4A06K * *$ * *ZETEX ZXMN6A07F Spice Model v1.0 Last Revised 29/6/05 * .SUBCKT ZXMN6A07F 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=.6E-6 W=0.34 M2 5 2 5 6 Pmod L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS ZXMN6A07F * *$ * * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *ZETEX ZXMN6A07FQ Spice Model v1.0 Last Revised 12/14/2023 * .SUBCKT ZXMN6A07FQ 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=.6E-6 W=0.34 M2 5 2 5 6 Pmod L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS ZXMN6A07FQ * *$ * *ZETEX ZXMN6A07Z Spice Model v1.0 Last Revised 29/6/05 * .SUBCKT ZXMN6A07Z 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=.6E-6 W=0.34 M2 5 2 5 6 Pmod L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 5 3 Dbodymod LD 3 30 0.6E-9 LG 4 40 2.0E-9 LS 5 50 2.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS ZXMN6A07Z * *$ * *ZETEX ZXMN6A08E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN6A08E6 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.075 RL 6 5 10E9 C1 2 5 100E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25 +KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=61) .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5) .ENDS ZXMN6A08E6 * *$ * *ZETEX ZXMN6A08G Spice Model v2.0 Last Revised 24/10/07 * .SUBCKT ZXMN6A08G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.075 RL 6 5 10E9 C1 2 5 100E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25 +KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=61) .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5) .ENDS ZXMN6A08G * *$ * *---------- ZXMN6A08GQ Spice Model ---------- .SUBCKT ZXMN6A08GQ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.03422 RS 30 3 0.001 RG 20 2 1.51 CGS 2 3 4.009E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.887 + TOX = 6E-008 NSUB = 1E+016 KP = 7.677 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.6E-010 VJ = 0.8 M = 0.6 .MODEL DSUB D IS = 1.504E-009 N = 1.348 RS = 0.02116 BV = 68 CJO = 2.699E-010 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes ZXMN6A08GQ Spice Model v1.0 Last Revised 2017/12/15 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=02/11/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN6A08K 30 40 50 M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.075 RL 6 5 10E9 C1 2 5 100E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25 +KP=1.8E-5 RS=0.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=0.025 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=61) .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5) .ENDS ZXMN6A08K * *$ *ZETEX ZXMN6A09DN8 Spice Model v1.5 Last Revised 24/2/05 * .SUBCKT ZXMN6A09DN8 30 40 50 *------connections------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RD 3 6 0.005 RS 8 5 0.005 RL 3 5 60E6 C1 2 8 1000E-12 C2 2 3 90E-12 C3 15 14 700E-12 C4 16 8 500E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1 .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=0 VOFF=3 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZXMN6A09DN8 * *$ * *ZETEX ZXMN6A09G Spice Model v1.5 Last Revised 24/2/05 * .SUBCKT ZXMN6A09G 30 40 50 *------connections------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RD 3 6 0.005 RS 8 5 0.005 RL 3 5 60E6 C1 2 8 1000E-12 C2 2 3 90E-12 C3 15 14 700E-12 C4 16 8 500E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1 .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=0 VOFF=3 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZXMN6A09G * *$ * *---------- ZXMN6A09GQ Spice Model ---------- .SUBCKT ZXMN6A09GQ 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008 RS 30 3 0.001 RG 20 2 1 CGS 2 3 1.239E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.05E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2 + TOX = 6E-008 NSUB = 1E+015 KP = 15 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 8.168E-010 VJ = 0.5 M = 0.4806 .MODEL DSUB D IS = 9.617E-010 N = 1.24 RS = 0.009903 BV = 65.01 + CJO = 3.117E-010 VJ = 0.6 M = 0.4759 TT = 1.249E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.0J Last Revised 2019/08/02 *ZETEX ZXMN6A09K Spice Model v1.5 Last Revised 24/2/05 * .SUBCKT ZXMN6A09K 30 40 50 *------connections------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RD 3 6 0.005 RS 8 5 0.005 RL 3 5 60E6 C1 2 8 1000E-12 C2 2 3 90E-12 C3 15 14 700E-12 C4 16 8 500E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1 .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=0 VOFF=3 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZXMN6A09K * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=30/01/2009 *VERSION=1 *PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1 * .SUBCKT ZXMN6A11DN8 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 20 21 22 22 Nnmod1 L=0.8E-6 W=0.5 M12 22 21 22 20 Pnmod1 L=0.6E-6 W=0.45 RG1 26 27 4.5 RIN1 21 22 2E12 RD1 20 24 Rnmod1 0.08 RS1 22 23 1E-6 RL1 23 24 10E9 C11 21 22 220E-12 C12 20 21 1E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1.0 Igt1 22 30 1.0 Rgt1 30 31 Rnmod2 1 LD1 24 25 1.5E-9 RP11 7 25 1E-6 RP12 8 25 1E-6 LG1 2 27 1.2E-9 LS1 1 23 1.2E-9 *Dev2 N-channel M21 60 61 62 62 Nnmod1 L=0.8E-6 W=0.5 M22 62 61 62 60 Pnmod1 L=0.6E-6 W=0.45 RG21 66 67 4.5 RIN2 61 62 2E12 RD2 60 64 Rnmod1 0.08 RS2 62 63 1E-6 RL2 63 64 10E9 C21 61 62 220E-12 C22 60 61 1E-12 D2 63 64 Dnmod1 Egt2 66 61 30 22 1 Vgt2 62 71 1.0 Igt2 62 70 1.0 Rgt2 70 71 Rnmod2 1 LD2 64 65 1.5E-9 RP21 5 65 1E-6 RP22 6 65 1E-6 LG2 4 67 1.2E-9 LS2 3 63 1.2E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dnmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63) .MODEL Rnmod1 RES (TC1=5.5e-3 TC2=1.4E-5) .MODEL Rnmod2 RES (TC1=-1.04e-3 TC2=-2E-6) .ENDS * *$ *ZETEX ZXMN6A11G Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN6A11G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63) .MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5) .ENDS ZXMN6A11G * *$ * *ZETEX ZXMN6A11Z Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN6A11Z 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63) .MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5) .ENDS ZXMN6A11Z * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=30/01/2009 *VERSION=1 *PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1 * .SUBCKT ZXMN6A25DN8 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 20 21 22 22 Nnmod1 L=1E-6 W=2 M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5 RG1 26 27 2 RIN1 21 22 2E12 RD1 20 24 Rnmod1 0.04 RS1 22 23 1e-6 RL1 23 24 10E9 C11 21 22 200E-12 C12 20 21 5E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1.0 Igt1 22 30 1.0 Rgt1 30 31 Rnmod2 1 LD1 24 25 1.5E-9 RP11 7 25 1E-6 RP12 8 25 1E-6 LG1 2 27 1.2E-9 LS1 1 23 1.2E-9 *Dev2 N-channel M21 60 61 62 62 Nnmod1 L=1E-6 W=2 M22 62 61 62 60 Pnmod1 L=1E-6 W=1.5 RG2 66 67 2 RIN2 61 62 2E12 RD2 60 64 Rnmod1 0.04 RS2 62 63 1e-6 RL2 63 64 10E9 C21 61 62 200E-12 C22 60 61 5E-12 D2 63 64 Dnmod1 Egt2 66 61 30 22 1 Vgt2 62 71 1.0 Igt2 62 70 1.0 Rgt2 70 71 Rnmod2 1 LD2 64 65 1.5E-9 RP21 5 65 1E-6 RP22 6 65 1E-6 LG2 4 67 1.2E-9 LS2 3 63 1.2E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=66) .MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5) .MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6) .ENDS * *$ *ZETEX ZXMN6A25G Spice Model v1.0 Last Revised 28/11/07 * .SUBCKT ZXMN6A25G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=2 M2 5 2 5 6 Pmod L=1E-6 W=1.5 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.04 RL 6 5 10E9 C1 2 5 200E-12 C2 3 4 5E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=63) .MODEL Rmod1 RES (TC1=5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-1.3e-3 TC2=0E-5) .ENDS ZXMN6A25G * *$ * *ZETEX ZXMN6A25K Spice Model v1.0 Last Revised 28/11/07 * .SUBCKT ZXMN6A25K 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=2 M2 5 2 5 6 Pmod L=1E-6 W=1.5 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.04 RL 6 5 10E9 C1 2 5 200E-12 C2 3 4 5E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=63) .MODEL Rmod1 RES (TC1=5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-1.3e-3 TC2=0E-5) .ENDS ZXMN6A25K * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=27/10/2008 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN6A25N8 1 2 3 *Dev1 N-channel M11 20 21 22 22 Nnmod1 L=1E-6 W=2 M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5 RG1 26 27 2 RIN1 21 22 2E12 RD1 20 24 Rnmod1 0.04 RS1 22 23 1e-6 RL1 23 24 10E9 C11 21 22 200E-12 C12 20 21 5E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1.0 Igt1 22 30 1.0 Rgt1 30 31 Rnmod2 1 LD1 1 24 1.3E-9 LG1 2 27 1.2E-9 LS1 3 23 1.2E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=66) .MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5) .MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6) .ENDS * *$ *ZETEX ZXMN7A11G Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN7A11G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2.2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 +RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12 BV=73) .MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5) .ENDS ZXMN7A11G * *$ * *ZETEX ZXMN7A11K Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN7A11K 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2.2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 +RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12 BV=73) .MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5) .ENDS ZXMN7A11K * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/12/2014 *VERSION=1 .SUBCKT ZXMP10A13F 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 300E-3 RS 23 3 Rmod1 600E-3 RG 20 22 10 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 13E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 8E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .009 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-4 TOX=10.4E-8 NSUB=3.5E+14 KP=38 NFS=13.7E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 8E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.29E-12 N=1.01 RS=0.05 BV=105 CJO=20E-12 VJ=0.45 M=0.33 TT=14E-9 TRS1=2m IKF=.5) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.2e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/12/2014 *VERSION=1 .SUBCKT ZXMP10A13F 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 300E-3 RS 23 3 Rmod1 600E-3 RG 20 22 10 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 13E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 8E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .009 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-4 TOX=10.4E-8 NSUB=3.5E+14 KP=38 NFS=13.7E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 8E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.29E-12 N=1.01 RS=0.05 BV=105 CJO=20E-12 VJ=0.45 M=0.33 TT=14E-9 TRS1=2m IKF=.5) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.2e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZXMP10A16K Spice Model v1.0 Last Revised 21/11/07 * .SUBCKT ZXMP10A16K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.35E-6 W=1.68 M2 5 2 5 6 Nmod L=1.4E-6 W=1.15 RG 4 2 4.7 RIN 2 5 1E9 RD 3 6 Rdmod 0.1 RL 3 5 3E9 C1 2 5 50E-12 C2 3 4 1E-12 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=0.3e16 +VTO=-3.2 KP=5.2e-6 RS=0.035 NFS=7.5E11 KAPPA=0.05 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-12 RS=0.027 CJO=125E-12 TT=66E-9 BV=105) .MODEL Rdmod RES (TC1=9e-3 TC2=1e-5) .ENDS ZXMP10A16K * *$ * * *Zetex ZXMP10A17E6 Spice model v1.0 Last revision 06/08/08 * .SUBCKT ZXMP10A17E6 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 4.2 RIN 2 5 1E9 RD 3 6 Rdmod 0.185 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15 + VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41 TT=5.2e-8 BV=110) .MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5) .ENDS ZXMP10A17E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=17SEP2010 *VERSION=1 *------connections------- D, G, S .SUBCKT ZXMP10A17G 30 40 50 M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 4.2 RIN 2 5 1E9 RD 3 6 Rdmod 0.185 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15 + VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41 + TT=5.2e-8 BV=110) .MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5) .ENDS ZXMP10A17G * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=17SEP2010 *VERSION=1 *------connections------- D, G, S .SUBCKT ZXMP10A17GQ 30 40 50 M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 4.2 RIN 2 5 1E9 RD 3 6 Rdmod 0.185 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15 + VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41 + TT=5.2e-8 BV=110) .MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5) .ENDS ZXMP10A17GQ * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=17SEP2010 *VERSION=1 *------connections------- D, G, S .SUBCKT ZXMP10A17K 30 40 50 M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 4.2 RIN 2 5 1E9 RD 3 6 Rdmod 0.185 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15 + VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41 + TT=5.2e-8 BV=110) .MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5) .ENDS ZXMP10A17K * *$ *ZETEX ZXMP10A18G Spice Model v1.0 Last Revised 22/11/07 * .SUBCKT ZXMP10A18G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.3E-6 W=2.64 M2 5 2 5 6 Nmod L=1.4E-6 W=2.0 RG 4 2 4.5 RIN 2 5 1E9 RD 3 6 Rdmod 0.55 RL 3 5 3E9 C1 2 5 50E-12 C2 3 4 1E-12 D1 3 5 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=1.2e16 +VTO=-3.54 KP=8e-6 RS=0.0182 NFS=11E11 KAPPA=0.05 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.3e-12 RS=0.025 CJO=25E-12 TT=65E-9 BV=105) .MODEL Rdmod RES (TC1=6e-3 TC2=1e-5) .ENDS ZXMP10A18G * *$ * *ZETEX ZXMP10A18K Spice Model v1.1 Last Revised 10/02/22 * .SUBCKT ZXMP10A18K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.3E-6 W=2.64 M2 5 2 5 6 Nmod L=1.4E-6 W=2.0 RG 4 2 4.5 RIN 2 5 1E9 RD 3 6 Rdmod 0.095 RL 3 5 3E9 C1 2 5 50E-12 C2 3 4 1E-12 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=1.2e16 +VTO=-3.54 KP=8e-6 RS=0.0182 NFS=11E11 KAPPA=0.05 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.3e-12 RS=0.025 CJO=25E-12 TT=65E-9 BV=105) .MODEL Rdmod RES (TC1=6e-3 TC2=1e-5) .ENDS ZXMP10A18K * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *ZETEX ZXMP10A18KQ Spice Model v1.1 Last Revised 03/09/23 * .SUBCKT ZXMP10A18KQ 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.3E-6 W=2.64 M2 5 2 5 6 Nmod L=1.4E-6 W=2.0 RG 4 2 4.5 RIN 2 5 1E9 RD 3 6 Rdmod 0.095 RL 3 5 3E9 C1 2 5 50E-12 C2 3 4 1E-12 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=1.2e16 +VTO=-3.54 KP=8e-6 RS=0.0182 NFS=11E11 KAPPA=0.05 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.3e-12 RS=0.025 CJO=25E-12 TT=65E-9 BV=105) .MODEL Rdmod RES (TC1=6e-3 TC2=1e-5) .ENDS ZXMP10A18KQ * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP2120E5 3 4 5 M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 + CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS * *$ *ZETEX ZXMP2120FF Spice Model v1.0 Last Revised 09/02/07 * .SUBCKT ZXMP2120FF 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS ZXMP2120FF * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP2120G4 3 4 5 M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 + CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS * *$ *ZETEX ZXMP3A13F Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A13F 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=0.33 M2 5 2 5 6 Nmod L=1.4E-6 W=0.19 RG 4 2 10 RIN 2 5 1E9 RD 3 6 Rdmod 0.05 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 5E-12 D1 3 5 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A13F * *$ * *ZETEX ZXMP3A16DN8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A16DN8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 6 RIN 2 5 1E9 RD 3 6 Rdmod 0.015 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.48 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-13 RS=.022 IKF=0.1 TRS1=1.5e-3 +CJO=50e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A16DN8 * *$ * *ZETEX ZXMP3A16G Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A16G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 6 RIN 2 5 1E9 RD 3 6 Rdmod 0.015 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.48 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-13 RS=.022 IKF=0.1 TRS1=1.5e-3 +CJO=50e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A16G * *$ * *ZETEX ZXMP3A16N8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A16N8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 6 RIN 2 5 1E9 RD 3 6 Rdmod 0.015 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.48 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-13 RS=.022 IKF=0.1 TRS1=1.5e-3 +CJO=50e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A16N8 * *$ * *ZETEX ZXMP3A17DN8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A17DN8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1 M2 5 2 5 6 Nmod L=1.4E-6 W=0.57 RG 4 2 7 RIN 2 5 1E9 RD 3 6 Rdmod 0.017 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.75 KP=.9E-5 RS=.025 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.8E-12 RS=.015 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A17DN8 * *$ * *ZETEX ZXMP3A17E6 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A17E6 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1 M2 5 2 5 6 Nmod L=1.4E-6 W=0.57 RG 4 2 7 RIN 2 5 1E9 RD 3 6 Rdmod 0.017 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.75 KP=.9E-5 RS=.025 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.8E-12 RS=.015 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A17E6 * *$ * *ZETEX ZXMP4A16G Spice Model v1.0 Last Revised 22/6/06 * .SUBCKT ZXMP4A16G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 2 RIN 2 5 1E9 RD 3 6 Rdmod 0.018 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=4E16 +VTO=-1.8 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.018 IKF=0.1 TRS1=1.5e-3 +CJO=450e-12 TT=2.2e-8 BV=44) .MODEL Rdmod RES (TC1=8e-3 TC2=1.5E-5) .ENDS ZXMP4A16G * *$ * *ZETEX ZXMP4A16K Spice Model v1.0 Last Revised 09/10/06 * .SUBCKT ZXMP4A16K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 2 RIN 2 5 1E9 RD 3 6 Rdmod 0.018 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=4E16 +VTO=-1.8 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.018 IKF=0.1 TRS1=1.5e-3 +CJO=450e-12 TT=2.2e-8 BV=44) .MODEL Rdmod RES (TC1=8e-3 TC2=1.5E-5) .ENDS ZXMP4A16K * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=24/07/2015 *VERSION=1 ** Imported from: C:\Users\siva_uppuluri\Desktop\ZXMP4A57E6\ZXMP4A57E6.txt .SUBCKT ZXMP4A57E6 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 48E-3 RS 23 3 Rmod1 2E-3 RG 20 22 12 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 900E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 530E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .002 LS 30 23 2E-15 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.5 TOX=5.5E-8 NSUB=35E+16 KP=15 NFS=1.5E+12 IS=1E-105 N=100) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=20E-13 N=1 RS=0.01 BV=45 CJO=400E-12 VJ=0.6 M=0.4 TT=14E-9 TRS1=2m EG=1.05 IKF=20m) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-4 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2015 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZXMP6A13F Spice Model v2.0 Last Revised 15/02/05 * .SUBCKT zxmp6a13F 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=0.39 M2 5 2 5 6 Nmod L=1.4E-6 W=0.195 RG 4 2 3 RIN 2 5 1E9 RD 3 6 Rdmod 0.25 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16 +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3 +CJO=3.514e-11 BV=66) .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5) .ENDS zxmp6a13F * *$ * *ZETEX ZXMP6A13G Spice Model v2.0 Last Revised 15/02/05 * .SUBCKT zxmp6a13G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=0.39 M2 5 2 5 6 Nmod L=1.4E-6 W=0.195 RG 4 2 3 RIN 2 5 1E9 RD 3 6 Rdmod 0.25 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16 +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3 +CJO=3.514e-11 BV=66) .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5) .ENDS zxmp6a13G * *$ * *ZETEX ZXMP6A16DN8 Spice Model v1.0 Last Revised 15/3/2007 * .SUBCKT ZXMP6A16DN8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.4E-6 W=2.148 M2 5 2 5 6 Nmod L=1.4E-6 W=1.579 RG 4 2 1.9 RIN 2 5 1E9 RD 3 6 Rdmod 0.04 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.6E15 +VTO=-2.24 KP=1.4E-5 RS=.03 NFS=1E11 KAPPA=.005 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.45E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=110) .MODEL Rdmod RES (TC1=7e-3 TC2=1.0E-5) .ENDS * *$ * *ZETEX ZXMP6A16K Spice Model v1.0 Last Revised 15/3/2007 * .SUBCKT ZXMP6A16K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.4E-6 W=2.148 M2 5 2 5 6 Nmod L=1.4E-6 W=1.579 RG 4 2 1.9 RIN 2 5 1E9 RD 3 6 Rdmod 0.04 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.6E15 +VTO=-2.24 KP=1.4E-5 RS=.03 NFS=1E11 KAPPA=.005 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.45E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=110) .MODEL Rdmod RES (TC1=7e-3 TC2=1.0E-5) .ENDS * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=04/02/2009 *VERSION=3 *PIN_ORDER Sp1, Gp1, Sp2, Gp2, Dp2, Dp2, Dp1, Dp1 * .SUBCKT ZXMP6A17DN8 1 2 3 4 5 6 7 8 *Dev1 P-channel M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 27 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 24 25 1.5E-9 RP11 7 25 1E-6 RP12 8 25 1E-6 LG1 2 27 1.2E-9 LS1 1 23 1.2E-9 *Dev2 P-channel M21 60 61 62 62 Ppmod1 L=1.4E-6 W=1.25 M22 62 61 62 60 Npmod1 L=1.4E-6 W=0.95 RG2 61 67 2.8 RIN2 61 62 1E9 RD2 60 64 Rpmod1 0.028 RS2 62 63 Rpmod1 0.068 RL2 63 64 7E9 C2 61 62 160E-12 D2 64 63 Dpmod1 LD2 64 65 1.5E-9 RP21 5 65 1E-6 RP22 6 65 1E-6 LG2 4 67 1.2E-9 LS2 3 63 1.2E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP6A17E6 1 2 3 M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 27 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 1 24 0.3E-9 LG1 2 27 1.2E-9 LS1 3 23 1.2E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP6A17G 1 2 3 M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 27 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 1 24 1.0E-9 LG1 2 27 2.3E-9 LS1 3 23 2.3E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP6A17K 1 2 3 M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 27 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 1 24 1.3E-9 LG1 2 27 2.4E-9 LS1 3 23 2.4E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS ZXMP6A17K * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP6A17N8 1 2 3 M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 2 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 1 24 1.3E-9 LS1 3 23 2.4E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS * *$ *ZETEX ZXMP6A18DN8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP6A18DN8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=2.64 M2 5 2 5 6 Nmod L=1.4E-6 W=1.5 RG 4 2 5 RIN 2 5 1E9 RD 3 6 Rdmod 0.03 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=.5E17 +VTO=-1.83 KP=1.9E-5 RS=.035 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.6E-12 RS=.022 IKF=1 TRS1=1.5e-3 +CJO=65e-12 BV=66) .MODEL Rdmod RES (TC1=9e-3 TC2=3.9E-5) .ENDS ZXMP6A18DN8 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=3 *PIN_ORDER D G S * .SUBCKT ZXMP6A18K 1 2 3 M11 20 21 22 22 Ppmod1 L=1.2E-6 W=2.64 M12 22 21 22 20 Npmod1 L=1.4E-6 W=1.5 RG1 27 21 1.3 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.03 RS1 22 23 1E-6 RL1 23 24 3E9 C11 21 22 500E-12 C12 20 21 15E-12 D1 24 23 Dpmod1 LD1 1 24 1.3E-9 LG1 2 27 2.4E-9 LS1 3 23 2.4E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=.5E17 VTO=-1.83 +KP=1.9E-5 RS=0.035 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=1.6E-12 RS=.022 IKF=1 TRS1=1.5E-3 +CJO=65E-12 BV=66) .MODEL Rpmod1 RES (TC1=10e-3 TC2=8E-6) .ENDS * *$ *ZETEX ZXMP7A17G Spice Model v1.0 Last Revised 14/3/2007 * .SUBCKT ZXMP7A17G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 1.9 RIN 2 5 1E9 RD 3 6 Rdmod 0.07 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 1.0E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=50E15 +VTO=-1.77 KP=2.5E-5 RS=.05 NFS=2E11 KAPPA=.002 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5.2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 +M=0.43 VJ=0.41 TT=2.2e-8 BV=77) .MODEL Rdmod RES (TC1=9e-3 TC2=1.5E-5) .ENDS * *$ * *ZETEX ZXMP7A17K Spice Model v1.0 Last Revised 14/3/2007 * .SUBCKT ZXMP7A17K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 1.9 RIN 2 5 1E9 RD 3 6 Rdmod 0.07 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=50E15 +VTO=-1.77 KP=2.5E-5 RS=.05 NFS=2E11 KAPPA=.002 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5.2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 +M=0.43 VJ=0.41 TT=2.2e-8 BV=77) .MODEL Rdmod RES (TC1=9e-3 TC2=1.5E-5) .ENDS * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=27/11/09 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMS6001N3 1 2 3 M1 31 4 33 33 Mmod1 M2 4 4 43 3 Mmod2 M=25 M3 41 37 38 38 Mmod3 M4 16 45 17 3 Mmod2 M=200 M5 15 16 17 3 Mmod2 M=200 M6 14 15 3 3 Mmod2 M=400 R1 2 4 20E3 R2 41 31 0.01 R3 3 33 0.25 R4 1 3 10E6 R5 37 3 20E3 R6 2 13 15E3 R7 2 3 26E3 R8 12 10 30E3 R9 12 11 28E3 R10 11 3 2.3E3 R11 13 16 35E3 R12 13 15 35E3 R13 17 3 2.5E3 R14 4 14 300 R15 18 45 50E3 R16 44 12 1.2E3 C1 4 33 400E-12 C2 4 1 75E-12 C3 35 36 400E-12 C4 16 3 200E-12 S1 43 3 41 42 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 42 3 2 3 0.22 E2 34 33 4 33 1 E3 18 19 11 10 100 E4 44 3 2 3 1 E6 36 3 31 4 1 D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 3 13 Dmod5 D6 10 3 Dmod6 D7 37 41 Dmod7 D8 3 1 Dmod8 D9 3 45 Dmod2 V1 1 41 0 * *Distributed Thermal Model for device mounted on minimum copper Rth=208°C/W *To enable thermal feedback for transient analysis only change **G1 to G1 *Transient junction temperature may be observed at node 100 where 1V=1°C * **G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) } R21 20 21 0.07 R22 21 22 0.17 R23 22 23 0.37 R24 23 24 1.34 R25 24 25 2.80 R26 25 26 11.19 R27 26 27 48.10 R28 27 28 78.30 R29 28 29 65.99 C21 20 21 7.45E-5 C22 21 22 2.98E-4 C23 22 23 8.94E-4 C24 23 24 2.23E-3 C25 24 25 1.97E-2 C26 25 26 3.58E-2 C27 26 27 5.61E-2 C28 27 28 4.47E-1 C29 28 29 1.36 V2 29 3 25 E5 19 3 22 29 0.201 *Junction temperature at node 20 is 1V/°C *Ambient temperature set V2 at 1V per 1°C * * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2 ) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=4) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12) .MODEL Smod1 VSWITCH RON=6000 ROFF=1E6 VON=0.5 VOFF=-1.5 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/12/2009 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMS6004FF 1 2 3 M1 31 40 33 33 Mmod1 M2 4 4 21 3 Mmod2 M=40 M3 41 37 38 38 Mmod3 M6 14 51 3 3 Mmod2 M=400 R1 2 4 60E3 R2 41 31 0.01 R3 3 33 0.35 R4 41 3 10E6 R5 37 3 20E3 R7 2 12 600 R8 12 10 50E3 R10 50 3 1000 R11 12 52 98E3 R12 3 52 2E3 R13 51 52 120E3 R14 4 14 500 R15 110 111 Rmod1 1 C1 4 33 200E-12 C2 4 31 50E-12 C3 35 31 200E-12 C4 52 3 50E-12 S1 21 3 41 22 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 22 3 2 3 0.22 E2 34 33 4 33 1 E3 19 3 103 109 4E-3 E4 19 50 value={V(10)-V(52)-0.50} E5 51 3 value={V(12)*((TANH(V(50)*100)+1)/2)} E6 4 40 100 3 4.2e-3 E7 109 3 value={(V(110)*1000)+27} D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 13 3 Dmod6 D6 10 13 Dmod6 D7 37 41 Dmod7 D8 3 41 Dmod8 V1 1 41 0 V2 3 111 1 I1 3 110 1 * * Distributed Thermal Model 15mm x 15mm x 1.6mm FR4 1oz Cu * To enable thermal feedback for transient analysis only change **G1 to G1 * Transient junction temperature may be observed at node 100 where 1V=1°C * **G1 3 100 value={ABS( I(V1) * V(1,3) ) } R21 100 101 0.23 R22 101 102 0.275 R23 102 103 1.265 R24 103 104 2.875 R25 104 105 10.925 R26 105 106 28.175 R27 106 107 29.67 R28 107 108 11.73 R29 108 109 67.85 C21 100 101 2.17E-5 C22 101 102 1.09E-4 C23 102 103 2.37E-4 C24 103 104 6.61E-4 C25 104 105 2.563E-3 C26 105 106 6.744E-3 C27 106 107 2.7974E-2 C28 107 108 0.8525 C29 108 109 0.8843 * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.35 IS=1E-15 KP=10) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.7 ) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.001 RS=10) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=6) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=1E-13 RS=0.05 N=1.005 BV=90 CJO=212E-12 M=0.5 VJ=0.75) .MODEL Smod1 VSWITCH RON=100 ROFF=1E6 VON=0.5 VOFF=0 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .MODEL Rmod1 RES (TC1=1e-3) .ENDS * *$ *TITLE=ZXRE060 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=3rd March 2011 *VERSION=1 *PIN_ORDER 1:PGND, 2:GND, 3:IN, 4:FB, 5:OUT * .subckt ZXRE060 PGND GND IN FB OUT * pins-----------1----2----3----4---5 * *Voltage reference with temperature effect E1 REFG 1 value={(0.6+1.72e-5*(TEMP-25)-1e-7*(TEMP-25)**2)*(0.5+0.5*tanh(4*(V(VCCL)-1.5)))} I1 VCCL 1 0.48m ; Supply current R1 REFG inm 48k R2 FB inp 48k C1 inm inp 0.2p I3 VCCL inp 45n ; input bias current I4 VCCL inm 45n * *First amplifier, limited to internal 2V supply E2 E2out 1 value={tanh(11.52*(V(inp)-V(inm)))} R7 E2out C3p 1 C3 C3p 1 250n ; 600kHz first breakpoint R3 C3p int 10k I2 VCCL int 2.5u C2 int 1 6p ; 2MHz second breakpoint *Second amplifier: transconductance *with sink current output voltage limit of 0 *source current output voltage limit of 2V G1 G1out 1 value={11e-6*(1-tanh(19.3*(v(int)-v(Q2e))))*tanh(10*max((V(G1out)-V(1)),0))} G2 VCCL G1out value={11e-6*(1+tanh(19.3*(V(int)-V(Q2e))))*tanh(10*max(2-(V(G1out)-V(1)),0))} * *Output Stage Q1 Q1c G1out Q2b 1 NPNCT R4 VCCL Q1c 250 R5 Q2b PGNDL 50k Q2 OUTL Q2b Q2e 1 NPNCT 5 R6 Q2e PGNDL 2.56 * L1 IN VCCL 2n L2 GND 1 2n L3 OUT OUTL 2n L4 PGND PGNDL 2n *Output transistor model from CT .model NPNCT NPN + is = 2.265f + nf = 1.000 + ise = 6.055f + ne = 1.562 + bf = 190.0 + ikf = 28.71m + vaf = 22.83 + nr = 1.008 + isc = 1.00000e-24 + nc = 1.543 + br = 34.83 + ikr = 1.250m + var = 19.13 + rb = 267.9 + irb = 1.250m + rbm = 100.0m + re = 802.9m + rc = 164.1m + cje = 163.1f + vje = 1.200 + mje = 151.0m + tf = 70.00p + xtf = 10.00 + vtf = 30.00 + itf = 200.0m + ptf = 34.00 + cjc = 380.6f + vjc = 410.0m + mjc = 360.0m + xcjc = 50.00m + tr = 6.00n + cjs = 525.2f + vjs = 401.0m + mjs = 179.2m + xtb = 200.0m + xti = 5.100 + eg = 1.110 + fc = 950.0m .ends ZXRE060 * * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *TITLE=ZXRE160 MACROMODEL *ORIGIN=DZSL_AG_GS *Derived from the ZXRE060 *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=3rd March 2011 *VERSION=1 *PIN_ORDER 1:PGND, 2:GND, 3:IN, 4:FB, 5:OUT * .subckt ZXRE160 PGND GND IN FB OUT * pins-----------1----2----3----4---5 * *Voltage reference with temperature effect E1 REFG 1 value={(0.6+1.72e-5*(TEMP-25)-1e-7*(TEMP-25)**2)*(0.5+0.5*tanh(4*(V(VCCL)-1.5)))} I1 VCCL 1 0.48m ; Supply current R1 REFG inm 48k R2 FB inp 48k C1 inm inp 0.2p I3 VCCL inp 45n ; input bias current I4 VCCL inm 45n * *First amplifier, limited to internal 2V supply E2 E2out 1 value={tanh(11.52*(V(inp)-V(inm)))} R7 E2out C3p 1 C3 C3p 1 250n ; 600kHz first breakpoint R3 C3p int 10k I2 VCCL int 2.5u C2 int 1 6p ; 2MHz second breakpoint *Second amplifier: transconductance *with sink current output voltage limit of 0 *source current output voltage limit of 2V G1 G1out 1 value={11e-6*(1-tanh(19.3*(v(int)-v(Q2e))))*tanh(10*max((V(G1out)-V(1)),0))} G2 VCCL G1out value={11e-6*(1+tanh(19.3*(V(int)-V(Q2e))))*tanh(10*max(2-(V(G1out)-V(1)),0))} * *Output Stage Q1 Q1c G1out Q2b 1 NPNCT R4 VCCL Q1c 250 R5 Q2b PGNDL 50k Q2 OUTL Q2b Q2e 1 NPNCT 5 R6 Q2e PGNDL 2.56 * L1 IN VCCL 2n L2 GND 1 2n L3 OUT OUTL 2n L4 PGND PGNDL 2n *Output transistor model from CT .model NPNCT NPN + is = 2.265f + nf = 1.000 + ise = 6.055f + ne = 1.562 + bf = 190.0 + ikf = 28.71m + vaf = 22.83 + nr = 1.008 + isc = 1.00000e-24 + nc = 1.543 + br = 34.83 + ikr = 1.250m + var = 19.13 + rb = 267.9 + irb = 1.250m + rbm = 100.0m + re = 802.9m + rc = 164.1m + cje = 163.1f + vje = 1.200 + mje = 151.0m + tf = 70.00p + xtf = 10.00 + vtf = 30.00 + itf = 200.0m + ptf = 34.00 + cjc = 380.6f + vjc = 410.0m + mjc = 360.0m + xcjc = 50.00m + tr = 6.00n + cjs = 525.2f + vjs = 401.0m + mjs = 179.2m + xtb = 200.0m + xti = 5.100 + eg = 1.110 + fc = 950.0m .ends ZXRE160 *ZETEX ZXT1053AK Spice Model v1.0 Last Revised 08/03/06 * .MODEL ZXT1053AK NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * *ZETEX ZXT1053AK Spice Model v1.0 Last Revised 08/03/06 * .MODEL ZXT1053AK NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * *ZETEX ZXT10N15DE6 Spice Model v1.0 Last Revised 25/11/02 * .MODEL ZXT10N15DE6 NPN IS =5.92E-13 BF =500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE =1.425 NR =1 BR =280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC =1.46 RB =0.1 RE =0.025 RC =0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF =1.12E-9 TR =2.15E-9 * *$ * *ZETEX ZXT10N20DE6 Spice Model v1.0 Last Revised 25/11/02 * .MODEL ZXT10N20DE6 NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 + ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF =0.95E-9 TR =2.25E-9 * *$ * *ZETEX ZXT10N50DE6 Spice Model v1.0 Last Revised 25/11/02 * .MODEL ZXT10N50DE6 NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 + VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 + RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF =0.78E-9 TR =9E-9 * *$ * *ZETEX ZXT10P12DE6 Spice Model v1.0 Last Revised 25/11/02 * .MODEL ZXT10P12DE6 PNP IS =5.5E-13 BF =500 IKF =3 VAF =14.93 + ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03 + RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 + TR =2E-9 * *$ * *ZETEX ZXT10P20DE6 Spice Model v1.0 Last Revised 11/03/02 * .MODEL ZXT10P20DE6 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * *ZETEX ZXT10P20DE6 Spice Model v1.0 Last Revised 11/03/02 * .MODEL ZXT10P20DE6 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * *ZETEX ZXT10P40DE6 Spice Model v2.0 Last Revised 1/5/03 * .MODEL ZXT10P40DE6 PNP IS =6.261E-13 BF =500 IKF =1.4 VAF =28.4 +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 +TRC1=.0025 * *$ * *ZETEX ZXT12P40DX Spice Model v1.2 Last revision 7/12/06 * .MODEL ZXT12P40DX PNP IS =8E-13 NF =1 BF =700 IKF=1.2 VAF=22 ISE=6E-14 NE =1.4 +NR =1 BR =35 IKR=1.2 VAR=10 ISC=1.3e-13 NC =1.45 RB =0.025 RE =0.025 RC =0.025 +CJC=123E-12 MJC=0.45 VJC=0.7 CJE=412E-12 MJE=0.45 VJE=0.74 TF =5E-10 TR =30e-9 +XTB=1.6 RCO=0.45 GAMMA=0.8E-9 QUASIMOD=1 * *$ * *ZETEX ZXT13N20DE6 Spice Model v2.0 Last revision 3/10/05 * .MODEL ZXT13N20DE6 NPN IS=1.71E-12 NF=1 BF=600 IKF=15 VAF=51 RC=0.03 +ISE=1.5E-13 NE=1.3 NR=1 BR=125 VAR=12 ISC=3.5E-13 NC=1.3 RB =1.6 +RE =0.006 CJC=162E-12 MJC=0.278 VJC=0.391 CJE=614E-12 MJE=0.308 +VJE=0.46 TF=1.1E-9 TR=6.3E-9 XTB=1.4 QUASIMOD=1 RCO=0.5 GAMMA=1E-8 * *$ * *ZETEX ZXT13P12DE6 Spice Model v1.0 Last Revised 1/3/02 *This single transistor Model is one half of a pair in package. * .MODEL ZXT13P12DE6 PNP IS=1.7E-12 NF=1 BF=530 IKF=1 NK=0.43 +VAF=15 ISE=1E-13 NE=1.5 NR=1 BR=200 VAR=5 ISC=1e-13 +NC=1.5 IKR=0.13 RB=1.1 RE=.013 RC=.013 CJC=257E-12 +MJC=0.34 VJC=0.54 CJE=645E-12 MJE=0.62 VJE=1.3 +TF=2E-9 TR=5e-9 XTB=1.5 * *$ * *ZETEX ZXT13P20DE6 Spice Model v1.0 Last Revised 17/1/05 * .MODEL ZXT13P20DE6 PNP IS=1.3E-12 NF=1 BF=450 IKF=6 VAF=15 +ISE=0.8E-13 NE=1.4 NR=1 BR=210 VAR=5 ISC=4e-14 NC=1.18 RB=1 +RE=.0075 RC=.07 CJC=235E-12 MJC=0.38 VJC=0.51 CJE=674E-12 +MJE=0.52 VJE=0.95 TF=1.1E-9 TR=3.6e-9 XTB=1.5 * *$ * *ZETEX ZXT13P40DE6 Spice Model v1.0 Last Revised 24/10/07 * .MODEL ZXT13P40DE6 PNP IS=1.6E-12 NF=1 BF=600 VAF=29.9 ISE=1.2E-13 + IKF=4 NE=1.45 BR=48 VAR=6.8 ISC=1.2E-13 NC=1.1 IKR=0.4 RC=0.028 + RB=0.10 RE=0.022 QUASIMOD=1 RCO=0.5 GAMMA=2.5E-9 CJC=155E-12 MJC=0.43 + VJC=0.6 CJE=570E-12 MJE=0.59 VJE=1.1 TF=0.8E-9 TR=18E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * *$ * *ZETEX ZXT13P40DE6 Spice Model v1.0 Last Revised 24/10/07 * .MODEL ZXT13P40DE6 PNP IS=1.6E-12 NF=1 BF=600 VAF=29.9 ISE=1.2E-13 + IKF=4 NE=1.45 BR=48 VAR=6.8 ISC=1.2E-13 NC=1.1 IKR=0.4 RC=0.028 + RB=0.10 RE=0.022 QUASIMOD=1 RCO=0.5 GAMMA=2.5E-9 CJC=155E-12 MJC=0.43 + VJC=0.6 CJE=570E-12 MJE=0.59 VJE=1.1 TF=0.8E-9 TR=18E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * *$ * *ZETEX ZXT690BK Spice Model v1.0 Last revision 13/07/07 * .MODEL ZXT690BK NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * *ZETEX ZXT690BK Spice Model v1.0 Last revision 13/07/07 * .MODEL ZXT690BK NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=10/11/2009 *VERSION=1 * .MODEL ZXT790AK PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23FEB2011 *VERSION=1 * .MODEL ZXT849K NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90 + ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 + VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 + RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 + CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23FEB2011 *VERSION=1 * .MODEL ZXT951K PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3 + ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12 + NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 + VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23FEB2011 *VERSION=1 * .MODEL ZXT951K PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3 + ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12 + NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 + VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9 * *$ *ZETEX ZXT953K Spice Model v1.0 Last Revised 16/01/07 * .MODEL ZXT953K PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55 +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12 +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286 +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2045E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13 + NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5 + RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9 + TR =30e-9 .MODEL Pmod PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25 + ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 + RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 + VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2045E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13 + NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5 + RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9 + TR =30e-9 .MODEL Pmod PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25 + ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 + RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 + VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2061E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 + BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 + CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 + XTB=1.4 .MODEL Pmod PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13 + IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010 + RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35 + VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2062E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4 + BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085 + CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 + RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4 .MODEL Pmod PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49 + NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9 + GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10 + TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2063E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 .MODEL Pmod PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=2 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC4591AMC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 + ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 + ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF =0.71E-9 TR =2.5E-9 .MODEL Pmod PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 + VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 + ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 + CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 + TF =0.51E-9 TR =3.6E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=2 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC4591AMC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 + ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 + ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF =0.71E-9 TR =2.5E-9 .MODEL Pmod PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 + VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 + ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 + CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 + TF =0.51E-9 TR =3.6E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=2 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6717MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 .MODEL Pmod PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=2 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6717MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 .MODEL Pmod PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6718MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6718MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6719MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 + VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 + RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF=0.78E-9 TR=9E-9 .MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6720MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5 +ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12 +NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48 +MJC=0.41 TF =9E-10 TR=3.5E-8 .MODEL Pmod PNP IS =6.348E-13 BF =450 IKF =1.25 VAF =30.24 + ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 + VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09 + RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 + CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 + TR =57E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTD09N50DE6 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84 + ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 + NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 + VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTD2090E6 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84 + ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 + NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 + VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23JUL2010 *VERSION=1 *PIN_ORDER P1=C1, P2=B1, P3=C2, P4=E2, P5=B2, P6=E1 * .SUBCKT ZXTD4591E6 P1 P2 P3 P4 P5 P6 Q1 P1 P2 P6 Nmod Q2 P3 P5 P4 Pmod * .MODEL Nmod NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 + ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 + ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF=0.71E-9 TR=2.5E-9 .ENDS ZXTD4591E6 .MODEL Pmod PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 + NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 + RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 + MJC=0.415 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD617MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Nmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD618MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Nmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD619MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Nmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 + VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 + RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF=0.78E-9 TR=9E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27/04/2010 *VERSION=1 *PIN_ORDER C1, B1, C2, E2, B2, E1. * .SUBCKT ZXTD6717E6 1 2 3 4 5 6 * Q1 1 2 6 Nmod1 Q2 3 5 4 Pmod1 * .MODEL Nmod1 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * .MODEL Pmod1 PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 * .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27/04/2010 *VERSION=1 *PIN_ORDER C1, B1, C2, E2, B2, E1. * .SUBCKT ZXTD6717E6 1 2 3 4 5 6 * Q1 1 2 6 Nmod1 Q2 3 5 4 Pmod1 * .MODEL Nmod1 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * .MODEL Pmod1 PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 * .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD717MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Pmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Pmod PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD718MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Pmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD720MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Pmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 .ENDS * *$ *ZETEX ZXTN04120HFF Spice Model v1.0 Last Revised 09/02/07 * .SUBCKT ZXTN04120HFF 1 2 3 * C B E Q1 1 2 4 SUB605 Q2 1 4 3 SUB605 3.46 * .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS ZXTN04120HFF * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=17Dec2013 *VERSION=1 * .SUBCKT ZXTN04120HK 1 2 3 * C B E Q1 1 2 4 SUB04120 Q2 1 4 3 SUB04120 3.46 .MODEL SUB04120 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS ZXTN04120HK * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZXTN07012EFF Spice Model v1.0 Last Revised 12/10/07 * .MODEL ZXTN07012EFF NPN IS=1.7E-12 NF=1 BF=1100 IKF=5 VAF=25 ISE=3E-13 + NE=1.43 NR=1 BR=470 IKR=1 VAR=6.5 ISC=1.2e-12 NC=1.5 RB=0.1 RE=0.03 + RC=0.0097 RCO=0.2 GAMMA=10E-10 CJC=106E-12 MJC=0.33 VJC=0.55 CJE=285E-12 + MJE=0.41 VJE=0.80 TF=0.4E-9 TR=1.3e-9 XTB=1.4 TRC1=0.003 TRB1=0.003 + TRE1=0.003 QUASIMOD=1 * *$ * *ZETEX ZXTN07045EFF Spice Model v1.0 Last revision 13/07/07 * .MODEL ZXTN07045EFF NPN IS=1.5E-12 NF=1 BF=1160 IKF=4 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.022 RC=0.015 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.6E-9 +TR=9E-9 RCO=0.75 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.004 TRB1=0.004 +TRC1=0.004 * *$ * *ZETEX ZXTN08400BFF Spice Model v1.0 Last Revised 12/10/07 * .MODEL ZXTN08400BFF NPN IS=3.3E-13 NF=1 BF=215 IKF=2 VAF=1500 ISE=1.3E-13 + NE=1.43 NR=1 BR=11.3 IKR=0.2 VAR=70 ISC=1E-12 NC=1.15 RB=0.2 RE=0.075 + RC=0.036 CJC=31E-12 MJC=0.33 VJC=0.38 CJE=360E-12 MJE=0.34 VJE=0.7 + TF=19E-10 TR=170E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=36 GAMMA=15E-7 *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=CADENCE PSPICE 15.7 *DATE=01DEC2010 *VERSION=1 * .MODEL ZXTN10150D NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3 + VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5 + VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046 + CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73 + TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1 + TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4 * *$ *ZETEX ZXTN19020CFF Spice Model v1.0 Last Revised 29/08/07 * .MODEL ZXTN19020CFF NPN IS=5.9E-13 NF=1 BF=400 IKF=9 VAF=117 ISE=9E-14 +NE=1.42 NR=1 BR=163 IKR=1 VAR=15.2 ISC=4E-13 NC=1.38 RB=.17 RE=.005 +RC=.0025 CJC=98E-12 MJC=0.29 VJC=0.46 CJE=379E-12 MJE=0.38 VJE=0.8 +TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 +RCO=0.15 GAMMA=1E-9 * *$ * *ZETEX ZXTN19020DFF Spice Model v1.0 Last Revised 29/08/07 * .MODEL ZXTN19020DFF NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14 +NE=1.4 NR=1 BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055 +RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8 +TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 +RCO=0.15 GAMMA=0.3E-9 * *$ * *DIODES_INC_SPICE_MODEL ZXTN19020DG *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=4/01/2013 *VERSION=1 .MODEL ZXTN19020DG NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14 + NE=1.4 NR=1 BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055 + RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8 + TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.15 GAMMA=0.3E-9 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL ZXTN19020DZ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=4/01/2013 *VERSION=1 .MODEL ZXTN19020DZ NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14 + NE=1.4 NR=1 BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055 + RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8 + TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.15 GAMMA=0.3E-9 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL ZXTN19020DZ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=4/01/2013 *VERSION=1 .MODEL ZXTN19020DZ NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14 + NE=1.4 NR=1 BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055 + RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8 + TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.15 GAMMA=0.3E-9 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX ZXTN19055DZ Spice Model v1.0 Last Revised 10/10/07 * .MODEL ZXTN19055DZ NPN IS=8E-13 NF=1 BF=520 IKF=9 VAF=150 ISE=9E-14 + NE=1.42 NR=1 BR=80 IKR=2.2 VAR=22 ISC=6E-13 NC=1.23 RB=0.14 RE=0.011 + RC=0.011 CJC=67E-12 MJC=0.35 VJC=0.47 CJE=360E-12 MJE=0.38 VJE=0.75 + TF=7E-10 TR=1.7E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.8 GAMMA=3.8E-9 * *$ * *ZETEX ZXTN19060CFF Spice Model v1.0 Last Revised 28/08/07 * .MODEL ZXTN19060CFF NPN IS=6E-13 NF=1 BF=375 IKF=9 VAF=176 ISE=7E-14 NE=1.42 +NR=1 BR=65 IKR=.12 VAR=23.3 ISC=3E-13 NC=1.27 RB=0.17 RE=0.007 RC=0.005 +CJC=62E-12 MJC=0.38 VJC=0.51 CJE=379E-12 MJE=0.38 VJE=0.8 TF=10E-10 +TR=2.5E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 RCO=1.1 +GAMMA=1.6E-8 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=09FEB2011 *VERSION=2 * .MODEL ZXTN19060CG NPN IS=6E-13 NF=1 BF=375 IKF=9 VAF=176 ISE=7E-14 NE=1.42 +NR=1 BR=65 IKR=.12 VAR=23.3 ISC=3E-13 NC=1.27 RB=0.17 RE=0.007 RC=0.005 +CJC=62E-12 MJC=0.38 VJC=0.51 CJE=379E-12 MJE=0.38 VJE=0.8 TF=10E-10 +TR=2.5E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 RCO=1.1 +GAMMA=1.6E-8 * *$ *ZETEX ZXTN19100CFF Spice Model v1.0 Last Revised 27/08/07 * .MODEL ZXTN19100CFF NPN IS=5.7E-13 NF=1 BF=390 IKF=6 VAF=183 ISE=1E-13 +NE=1.42 NR=1 BR=43 IKR=.1 VAR=32 ISC=5.5E-13 NC=1.25 RB=.15 RE=.01 RC=.01 +CJC=52E-12 MJC=0.378 VJC=0.45 CJE=373E-12 MJE=0.38 VJE=0.77 TF=8.5E-10 +TR=5.1E-8 XTB=1.4 TRC1=.004 TRB1=.004 TRE1=.004 QUASIMOD=1 RCO=2.1 +GAMMA=1.9E-8 * *$ * .MODEL ZXTN19100CZ NPN IS=5.7E-13 NF=1 BF=390 IKF=6 VAF=183 ISE=1E-13 + NE=1.42 NR=1 BR=43 IKR=.1 VAR=32 ISC=5.5E-13 NC=1.25 RB=.15 RE=.01 RC=.01 + CJC=52E-12 MJC=0.378 VJC=0.45 CJE=373E-12 MJE=0.38 VJE=0.77 TF=8.5E-10 + TR=5.1E-8 XTB=1.4 TRC1=.004 TRB1=.004 TRE1=.004 QUASIMOD=1 RCO=2.1 + GAMMA=1.9E-8 * *$ *ZETEX ZXTN2005G Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2005G NPN IS =1.9E-12 BF =730 XTB=1.4 IKF=5.5 VAF=30 +ISE=8E-13 NE =1.4 NR =1 BR =280 IKR=2.5 VAR=15 ISC=1.2E-12 +NC =1.4 RB =1 RBM =0.012 IRB =1 RE = 0.022 RC =0.004 CJC=125E-12 +MJC=0.3917 VJC=0.5871 CJE=528E-12 MJE=0.3826 VJE=0.7686 +TF =0.8E-9 TR =3.2E-9 * *$ * *ZETEX ZXTN2005Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2005Z NPN IS =1.9E-12 BF =730 XTB=1.4 IKF=5.5 VAF=30 +ISE=8E-13 NE =1.4 NR =1 BR =280 IKR=2.5 VAR=15 ISC=1.2E-12 +NC =1.4 RB =1 RBM =0.012 IRB =1 RE = 0.022 RC =0.004 CJC=125E-12 +MJC=0.3917 VJC=0.5871 CJE=528E-12 MJE=0.3826 VJE=0.7686 +TF =0.8E-9 TR =3.2E-9 * *$ * *ZETEX ZXTN2005Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2005Z NPN IS =1.9E-12 BF =730 XTB=1.4 IKF=5.5 VAF=30 +ISE=8E-13 NE =1.4 NR =1 BR =280 IKR=2.5 VAR=15 ISC=1.2E-12 +NC =1.4 RB =1 RBM =0.012 IRB =1 RE = 0.022 RC =0.004 CJC=125E-12 +MJC=0.3917 VJC=0.5871 CJE=528E-12 MJE=0.3826 VJE=0.7686 +TF =0.8E-9 TR =3.2E-9 * *$ * *ZETEX ZXTN2007G Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2007G NPN IS=1.5E-12 NF=1 BF=210 IKF=8 VAF=100 ISE=7.5E-13 +NE=1.39 NR=1 BR=120 IKR=5 VAR=25 ISC=9E-13 NC=1.37 RC=0.005 TRC1=3e-3 +RB=0.3 TRB1=6e-3 RE=0.024 TRE1=3e-3 CJC=110E-12 MJC=0.44 VJC=0.65 CJE=650E-12 +TF=0.8E-9 TR=9E-9 XTB=1.4 * *$ * *ZETEX ZXTN2007Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2007Z NPN IS=1.5E-12 NF=1 BF=210 IKF=8 VAF=100 ISE=7.5E-13 +NE=1.39 NR=1 BR=120 IKR=5 VAR=25 ISC=9E-13 NC=1.37 RC=0.005 TRC1=3e-3 +RB=0.3 TRB1=6e-3 RE=0.024 TRE1=3e-3 CJC=110E-12 MJC=0.44 VJC=0.65 CJE=650E-12 +TF=0.8E-9 TR=9E-9 XTB=1.4 * *$ * *ZETEX ZXTN2010A Spice Model v1.0 Last revision 24/03/2006 * .MODEL ZXTN2010A NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * *ZETEX ZXTN2010G Spice Model v1.0 Last revision 24/03/2006 * .MODEL ZXTN2010G NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * *ZETEX ZXTN2010Z Spice Model v1.0 Last revision 24/10/2006 * .MODEL ZXTN2010Z NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * *ZETEX ZXTN2010Z Spice Model v1.0 Last revision 24/10/2006 * .MODEL ZXTN2010Z NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * .MODEL ZXTN2011G NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13 + NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15 + RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78 + QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4 + TRC1=0.003 TRB1=0.003 TRE1=0.003 * *$ .MODEL ZXTN2011Z NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13 + NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15 + RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78 + QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4 + TRC1=0.003 TRB1=0.003 TRE1=0.003 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/04/2009 *VERSION=2 * .MODEL ZXTN2018F NPN IS=3E-13 NF=1 BF=245 IKF=8.5 VAF=87 ISE=1.3E-13 + NE=1.42 NR=1 BR=50 IKR=1 VAR=33 ISC=7e-13 NC=1.4 RE=0.0077 RB=0.15 + RC=0.0049 QUASIMOD=1 RCO=0.75 GAMMA=3E-9 VO=11.5 CJE=610E-12 VJE=0.7 + MJE=0.36 CJC=90E-12 VJC=0.6 MJC=0.36 TF=8.8E-10 TR=2.5e-8 XTB=1.4 + TRE1=0.004 TRB1=0.004 TRC1=0.004 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/04/2009 *VERSION=2 * .MODEL ZXTN2018F NPN IS=3E-13 NF=1 BF=245 IKF=8.5 VAF=87 ISE=1.3E-13 + NE=1.42 NR=1 BR=50 IKR=1 VAR=33 ISC=7e-13 NC=1.4 RE=0.0077 RB=0.15 + RC=0.0049 QUASIMOD=1 RCO=0.75 GAMMA=3E-9 VO=11.5 CJE=610E-12 VJE=0.7 + MJE=0.36 CJC=90E-12 VJC=0.6 MJC=0.36 TF=8.8E-10 TR=2.5e-8 XTB=1.4 + TRE1=0.004 TRB1=0.004 TRC1=0.004 * *$ *ZETEX ZXTN2020F Spice Model v1.0 Last Revised 15/03/06 * .MODEL ZXTN2020F NPN IS=500E-15 NF=.998 BF=270 IKF=15 VAF=390 ISE=300E-15 +NE =1.46 NR=1 BR=40 IKR=1 VAR=23 ISC=500E-15 NC=1.37 RC=0.006 RB =0.15 +RE =0.010 CJC=72E-12 MJC=0.42 VJC=0.68 CJE=580E-12 MJE=0.35 VJE=0.68 +TF=0.8E-9 TR=40E-9 XTB=1.4 QUASIMOD=1 RCO=1.2 GAMMA=5E-9 * *$ * *ZETEX ZXTN2031F Spice Model v1.0 Last Revised 01/11/05 * .MODEL ZXTN2031F NPN IS =3E-13 BF =380 VAF=100 IKF=2.5 ISE=1.1E-13 NE =1.37 +BR =100 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.2 RE =.015 +RC =.015 CJE=250E-12 TF =1E-9 CJC=50E-12 TR =10E-9 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=26JUL2010 *VERSION=1 * .MODEL ZXTN2038F NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 + ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 ISC=1.6E-12 + NC=1.38 RB=0.065 RE=0.109 RC=0.075 CJC=17.2E-12 MJC=0.3429 + VJC=0.4298 CJE=96E-12 TF=0.71E-9 TR=2.5E-9 * *$ *ZETEX ZXTN2040F Spice Model v1.0 Last Revised 10/03/06 * .MODEL ZXTN2040F NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF =0.71E-9 TR =2.5E-9 * *$ * *ZETEX ZXTN23015CFH Spice Model v1.0 Last Revised 05/10/07 * .MODEL ZXTN23015CFH NPN IS=8E-13 NF=1 BF=410 IKF=9 VAF=90 ISE=3.3E-13 + NE=1.42 NR=1 BR=180 IKR=1 VAR=12.5 ISC=1.2E-12 NC=1.52 RB=0.2 RE=0.0012 + RC=0.005 CJC=153E-12 MJC=0.35 VJC=0.55 CJE=550E-12 MJE=0.37 VJE=0.75 + TF=6E-10 TR=0.35E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.12 GAMMA=5E-10 * *$ * *ZETEX ZXTN25012EFH Spice Model v1.0 Last revision 01/03/07 * .MODEL ZXTN25012EFH NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 +BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 +CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 +XTB=1.4 * *$ * *ZETEX ZXTN25012EFL Spice Model v1.0 Last revision 01/03/07 * .MODEL ZXTN25012EFL NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 +BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 +CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 +XTB=1.4 * *$ * * *ZETEX ZXTN25012EZ Spice model v1.0 Last revision 14/01/08 * .MODEL ZXTN25012EZ NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 + BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 + CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 + XTB=1.4 * *$ * * (c) 2008 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX ZXTN25015DFH Spice Model v1.0 Last Revised 11/10/07 * .MODEL ZXTN25015DFH NPN IS=5E-13 NF=1 BF=500 IKF=5.5 VAF=57 ISE=2.3E-13 + NE=1.55 NR=1 BR=160 IKR=1 VAR=12.3 ISC=6e-13 NC=1.47 RB=0.15 RE=.009 + RC=.006 RCO=0.2 GAMMA=1.8E-10 CJC=60E-12 MJC=0.33 VJC=0.55 CJE=200E-12 + MJE=0.38 VJE=0.75 TF=0.6E-9 TR=2.6e-9 XTB=1.4 TRC1=.005 TRB1=.005 + TRE1=.005 QUASIMOD=1 * *$ * *ZETEX ZXTN25020BFH Spice Model v1.0 Last Revised 13/3/2007 * .MODEL ZXTN25020BFH NPN IS=2E-13 BF=280 NF=1 VAF=40 IKF=4.3 ISE=1E-13 NE=1.4 +BR=90 NR=1 VAR=19 IKR=2.0 ISC=5e-13 NC=1.45 RE=0.0131 RB=0.14 RC=0.0086 +CJE=224E-12 VJE=0.67 MJE=0.33 CJC=62.5E-12 VJC=0.55 MJC=0.335 TF=0.65E-9 TR=7.5e-9 +RCO=0.13 GAMMA=1E-10 QUASIMOD=1 XTB=1.4 * *$ * *ZETEX ZXTN25020CFH Spice Model v1.0 Last revision 04/07/07 * .MODEL ZXTN25020CFH NPN IS =2.8E-13 NF =1 BF =390 IKF=9 NK=0.73 VAF=67 +ISE=7E-14 NE =1.4 NR =1 BR =36 IKR=1.7 VAR=14 ISC=4e-13 NC =1.4 RB =0.15 +RE =.008 RC =.006 RCO=0.29 GAMMA=1.1E-9 CJC=47E-12 MJC=0.33 VJC=0.49 +CJE=196E-12 MJE=0.34 VJE=0.68 TF =0.7E-9 TR =20e-9 XTB=1.4 TRE1=.005 +TRB1=.005 TRC1=.005 QUASIMOD=1 * *$ * *ZETEX ZXTN25020DFH Spice Model v1.0 Last Revised 02/3/2007 * .MODEL ZXTN25020DFH NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4 +BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085 +CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 +RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4 * *$ * *ZETEX ZXTN25020DFL Spice Model v1.0 Last Revised 02/3/2007 * .MODEL ZXTN25020DFL NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4 +BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085 +CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 +RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4 * *$ * *ZETEX ZXTN25040DFH Spice Model v1.0 Last revision 01/06/07 * .MODEL ZXTN25040DFH NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ * *ZETEX ZXTN25040DFL Spice Model v1.0 Last revision 01/06/07 * .MODEL ZXTN25040DFL NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ * *ZETEX ZXTN25040DZ Spice Model v1.0 Last revision 01/06/07 * .MODEL ZXTN25040DZ NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ * *ZETEX ZXTN25050DFH Spice Model v1.0 Last Revised 09/10/07 * .MODEL ZXTN25050DFH NPN IS=5E-13 NF=1 BF=520 IKF=5.6 VAF=115 ISE=1.1E-13 + NE=1.38 NR=1 BR=22 IKR=1 VAR=65 ISC=3E-13 NC=1.25 RB=0.2 RE=0.00125 + RC=0.00128 CJC=35.5E-12 MJC=0.32 VJC=0.45 CJE=183E-12 MJE=0.38 VJE=0.75 + TF=5.7E-10 TR=5.3E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 + RCO=1.7 GAMMA=1.2E-8 * *$ * *ZETEX ZXTN25060BFH Spice Model v1.0 Last revision 05/06/07 * .MODEL ZXTN25060BFH NPN IS=2E-13 NF=1 BF=315 IKF=4.0 VAF=210 ISE=1.2E-13 +NE=1.3 NR=1 BR=12 IKR=0.5 VAR=27 ISC=4.2e-13 NC=1.33 RE=.005 RB=0.25 +RC=.005 RCO=1.9 GAMMA=16E-9 QUASIMOD=1 CJE=222E-12 VJE=0.73 MJE=0.35 +CJC=34E-12 VJC=0.46 MJC=0.34 TF=7.4E-10 TR=7.6e-8 XTB=1.4 TRE1=.004 +TRB1=.004 TRC1=.004 * *$ * *ZETEX ZXTN25060BZ Spice Model v1.0 Last revision 05/06/07 * .MODEL ZXTN25060BZ NPN IS=2E-13 NF=1 BF=315 IKF=4.0 VAF=210 ISE=1.2E-13 +NE=1.3 NR=1 BR=12 IKR=0.5 VAR=27 ISC=4.2e-13 NC=1.33 RE=.005 RB=0.25 +RC=.005 RCO=1.9 GAMMA=16E-9 QUASIMOD=1 CJE=222E-12 VJE=0.73 MJE=0.35 +CJC=34E-12 VJC=0.46 MJC=0.34 TF=7.4E-10 TR=7.6e-8 XTB=1.4 TRE1=.004 +TRB1=.004 TRC1=.004 * *$ * *ZETEX ZXTN25060BZ Spice Model v1.0 Last revision 05/06/07 * .MODEL ZXTN25060BZ NPN IS=2E-13 NF=1 BF=315 IKF=4.0 VAF=210 ISE=1.2E-13 +NE=1.3 NR=1 BR=12 IKR=0.5 VAR=27 ISC=4.2e-13 NC=1.33 RE=.005 RB=0.25 +RC=.005 RCO=1.9 GAMMA=16E-9 QUASIMOD=1 CJE=222E-12 VJE=0.73 MJE=0.35 +CJC=34E-12 VJC=0.46 MJC=0.34 TF=7.4E-10 TR=7.6e-8 XTB=1.4 TRE1=.004 +TRB1=.004 TRC1=.004 * *$ * *ZETEX ZXTN25100BFH Spice Model v1.0 Last Revised 11/10/07 * .MODEL ZXTN25100BFH NPN IS=3E-13 NF=1 BF=315 IKF=5 VAF=256 ISE=1.1E-13 + NE=1.43 NR=1 BR=31 IKR=1 VAR=40 ISC=3e-13 NC=1.15 RB=0.15 RE=.014 + RC=.015 RCO=4.5 GAMMA=4.5E-8 CJC=30E-12 MJC=0.3 VJC=0.42 CJE=210E-12 + MJE=0.38 VJE=0.8 TF=0.8E-9 TR=70e-9 XTB=1.4 TRC1=.003 TRB1=.003 + TRE1=.003 QUASIMOD=1 * *$ * *ZETEX ZXTN25100DFH Spice Model v1.0 Last Revised 09/10/07 * .MODEL ZXTN25100DFH NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13 + NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013 + RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78 + TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=7 GAMMA=8.3E-8 * *$ * .MODEL ZXTN25100DG NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13 + NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013 + RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78 + TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=7 GAMMA=8.3E-8 * *$ .MODEL ZXTN25100DG NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13 + NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013 + RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78 + TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=7 GAMMA=8.3E-8 * *$ .MODEL ZXTN25100DZ NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13 + NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013 + RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78 + TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=7 GAMMA=8.3E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=19/01/2011 *VERSION=1 * .MODEL ZXTN26020DMF NPN IS=7.5E-13 BF=700 NF=1.005 VAF=61 IKF=3.3 + ISE=8.5E-14 NE=1.35 BR=130 NR=1 VAR=11.3 IKR=1.4 ISC=6E-13 NC=1.38 + RE=0.061 RB=0.5 RC=0.010 CJE=143E-12 VJE=0.80 MJE=0.39 CJC=39E-12 + VJC=0.40 MJC=0.26 TF=0.48E-9 TR=2.7E-9 RCO=0.42 GAMMA=2E-9 + QUASIMOD=1 XTB=1.35 TRE1=0.004 TRB1=0.004 TRC1=0.004 * *$ *DIODES_INC_SPICE_MODEL ZXTN26070CV *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=10Nov2011 *VERSION=1 .MODEL ZXTN26070 NPN IS=300E-15 NF=1 BF=350 ISE=60E-15 NE=1.35 + BR=16 ISC=400E-15 NC=1.25 NR=1 CJC=30.37E-12 MJC=0.33 VJC=0.5 + CJE=160.7E-12 MJE=0.37 VJE=0.75 RC=93.2m RE=30m RB=2 TF=.8n TR=80n .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=27-Jan-2014 *VERSION=1 * .MODEL ZXTN4004K NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3 + VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5 + VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046 + CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73 + TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1 + TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=27-Jan-2014 *VERSION=1 * .MODEL ZXTN4004K NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3 + VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5 + VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046 + CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73 + TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1 + TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=27-Jan-2014 *VERSION=1 * .MODEL ZXTN4004Z NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3 + VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5 + VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046 + CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73 + TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1 + TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_PH *SIMULATOR=PSPICE *DATE=13OCT2019 *VERSION=1 * .MODEL ZXTN4240F NPN + IS=6.8e-13; + BF=500; + NF=1.038; + VAF=100; + IKF=10; + ISE=9e-14; + NE=1.6; + BR=32; + NR=1.04; + VAR=14; + IKR=1; + ISC=1e-14; + NC=1.3; + RE=0.02; + RB=1; + RC=0.032; + CJE=141e-12; + VJE=0.84; + MJE=0.4; + CJC=31e-12; + VJC=0.55 + MJC=0.4 + TF=0.59E-9 + TR=6E-9 + RCO=1.7; + GAMMA=4e-8; + QUASIMOD=1 + XTB=1.25; + TRE1=0.0045; + TRB1=0.0035 + TRC1=0.0045 * * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability = intrinsic base-intrinsic emitter voltage * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTN5551FL NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTN5551FL NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTN5551Z NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTN617MA NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTN618MA NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 * *$ *ZXTN619MA Spice model *SIMULATOR=SIMETRIX *ORIGIN=PH *DATE=09April2019 *VERSION=2 *#SIMETRIX .Model ZXTN619MA NPN ; ## Description ## ## Effect ## ; ## DC Forward Parameters ## + IS = 5.8032E-13 ; transport saturation current Controls Icbo and where hFE falls with high Ic + NF = 1.02 ; forward current emission coefficient + ISE = 1.5933E-13 ; base-emitter leakage saturation current Controls the fall in hFE that occurs at low Ic + NE = 1.4148 ; base-emitter leakage emission coefficient Controls Icbo and where hFE falls with high Ic. Controls the fall in hFE that occurs at low Ic + BF = 465 ; ideal maximum forward beta Controls peak forward hFE + IKF = 8 ; corner for forward-beta high-current roll-off Current where rollof occurs + NK = 0.8 ; high-current roll-off coefficient Slope of roll off + VAF = 84 ; forward Early voltage controls the variation of collector current with voltage when the transistor is operated in its linear region. ; ## DC Reverse Parameters ## + NR = 1.0006 ; reverse current emission coefficient + ISC = 5E-12 ; base-collector leakage saturation current Controls the fall of reverse hFE at low currents + NC = 1.6 ; base-collector leakage emission coefficient Controls the fall of reverse hFE at low currents + BR = 110 ; ideal maximum reverse beta Controls peak reverse hFE + IKR = 1.4 ; corner for reverse-beta high-current roll-off Current where rollof occurs + VAR = 51 ; reverse Early voltage the reverse version of VAF. ; ## DC Rb Parameters ## + RB = 14.5 ; zero-bias (maximum) base resistance + IRB = 8.00E-06 ; current at which Rb falls halfway to RBM + RBM = 0.2 ; minimum base resistance ; ## DC Re Parameters ## + RE = 0.05 ; emitter ohmic resistance ; ## DC Rc Parameters ## + RC = 0.0375 ; collector ohmic resistance ; ## AC base-emitter Parameters ## + CJE= 2.17E-10 ; base-emitter zero-bias p-n capacitance controls Cbe. + VJE = 0.75 ; base-emitter built-in potential + MJE = 0.33 ; base-emitter p-n grading factor ; ## AC base-collector Parameters ## + CJC = 4E-11 ; base-collector zero-bias p-n capacitance control Ccb and how it varies with Vcb. + VJC = 0.4347 ; base-collector built-in potential control Ccb and how it varies with Vcb. + MJC = 0.3708 ; base-collector p-n grading factor control Ccb and how it varies with Vcb. + XCJC = 1 ; fraction of CJC connected internally to Rb ; ## AC substrate Parameters ## + CJS = 0 ; substrate zero-bias p-n capacitance + VJS = 0.75 ; substrate p-n built-in potential + MJS = 0 ; substrate p-n grading factor ; ## AC Transit Time Parameters ## + TF = 780.0E-12 ; ideal forward transit time controls Ft and switching speeds. + XTF = 0 ; transit time bias dependence coefficient + VTF = 1E+20 ; transit time dependency on Vbc + ITF = 0 ; transit time dependency on Ic + PTF = 0 ; excess phase @ 1/(2p·TF)Hz + TR = 9.00E-09 ; ideal reverse transit time controls switching storage times. ; ##Temperature Parameters ## + XTB = 1.3 ; forward and reverse beta temperature coefficient controls temperature effects on hFE. Try 1.6 for NPN, 1.9 for PNP + XTI = 3 ; IS temperature effect exponent controls temperature effects on saturation current + RCO = 0 ; epitaxial region resistance + TRB1 = 0 ; RB temperature coefficient (linear) + TRB2 = 0 ; RB temperature coefficient (quadratic) + TRC1 = 0 ; RC temperature coefficient (linear) + TRC2 = 0 ; RC temperature coefficient (quadratic) + TRE1 = 0 ; RE temperature coefficient (linear) + TRE2 = 0 ; RE temperature coefficient (quadratic) + TRM1 = 0 ; RBM temperature coefficient (linear) + TRM2 = 0 ; RBM temperature coefficient (quadratic) * T_ABS = ; absolute temperature + T_MEASURED = 27 ; measured temperature * T_REL_GLOBAL = ; relative to current temperature + QUASIMOD = 1 ; quasi-saturation model flag for temperature dependence 1= Gamma, RCO, VO temp dependance 0n. 0=off. + CN = 2.42 ; quasi-saturation temperature coefficient for hole mobility defaults NPN 2.42, PNP 2.20 + D = 0.87 ; quasi-saturation temperature coefficient -hole carrier velocity defaults NPN 0.87, PNP 0.52 + FC = 0.5 ; forward-bias depletion capacitor coefficient + EG = 1.11 ; bandgap voltage (barrier height) + GAMMA = 1E-11 ; epitaxial region doping factor + ISS = 0 ; substrate p-n saturation current + NS = 1 ; substrate p-n emission coefficient + QCO = 0 ; epitaxial region charge factor ; ## Flicker Parameters ## + AF = 1 ; flicker noise exponent + KF = 0 ; flicker noise coefficient 0.0 + VG = 1.206 ; quasi-saturation extrapolated bandgap voltage at 0° K + VO = 10 ; carrier mobility knee voltage * (c) 2019 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTN620MA NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5 +ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12 +NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48 +MJC=0.41 TF =9E-10 TR=3.5E-8 * *$ *DIODES_INC_SPICE_MODEL ZXTN649F *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=22Aug2013 *VERSION=1.0 .MODEL ZXTN649F NPN (IS=1.45E-13 NF=.99 ISE=75E-15 NE=1.38 BF=220 ISC=400E-15 NC=1.4 BR=30 NR=.99 CJE=178p VJE=.7 MJE=.345 CJC=37.45p MJC=.35 VJC=.5 RE=.03 RB=1 RC=.03 VAF=75 IKF=8.5 TF=1n TR=250u Nk=.69 TR =23.7E-9 XTB=1.3 TRE1=.0025 TRB1=.0025 TRC1=.0025) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=N/C *4=A *5=K *6=K *7=C1 *8=C1 * .SUBCKT ZXTNS618MC 1 2 3 4 5 6 7 8 Q1 11 1 2 Nmod D1 4 12 S9086 RP1 11 7 0.001 RP2 11 8 0.001 RP3 12 5 0.001 RP4 12 6 0.001 RP5 3 4 1E15 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p + M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25 .ENDS * *$ *ZETEX ZXTP05120HFF Spice Model v1.0 Last Revised 08/02/07 * .SUBCKT ZXTP05120HFF 1 2 3 * C B E Q1 1 2 4 SUB704 Q2 1 4 3 SUB704 4 * .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817 +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595 .ENDS ZXTP05120HFF * *$ * *ZETEX ZXTP07012EFF Spice Model v1.0 Last Revised 14/05/07 * .MODEL X07P12E PNP IS=1.3E-12 BF=660 NF=1 VAF=11 IKF=4 ISE=2E-13 NE=1.48 +BR=230 NR=1 VAR=6 IKR=0.65 ISC=1.2e-13 NC=1.33 RE=0.035 RB=0.1 RC=0.018 +CJE=280E-12 VJE=0.8 MJE=0.47 CJC=145E-12 VJC=0.75 MJC=0.46 +TF=3.3E-10 TR=2e-9 RCO=0.26 GAMMA=20E-10 QUASIMOD=1 +TRB1=0.001 TRE1=0.001 TRC1=0.001 XTB=1.5 * *$ * *ZETEX ZXTP07040DFF Spice Model v1.0 Last Revised 12/10/07 * .MODEL ZXTP07040DFF PNP IS=7.5E-13 NF=1 BF=490 VAF=34 ISE=1.9E-13 + IKF=3 NE=1.49 BR=69 VAR=5.7 ISC=1.3E-13 NC=1.22 RC=0.006 RB=0.1 + RE=0.022 CJC=105E-12 MJC=0.44 VJC=0.65 CJE=299E-12 MJE=0.52 VJE=0.96 + TF=0.47E-9 TR=10E-9 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 RCO=0.58 + GAMMA=6E-10 QUASIMOD=1 * *$ * *ZETEX ZXTP08400BFF Spice Model v1.1 Last Revised 15/08/07 * .MODEL ZXTP08400BFF PNP IS=3.8E-13 BF=200 NF=1 VAF=250 ISE=2E-13 NE=1.48 +BR=5 NR=1 VAR=65 ISC=3.8E-13 NC=1.05 RC=0.045 RE=0.068 RB=0.1 +CJE=370E-12 VJE=0.8 MJE=0.43 CJC=65E-12 VJC=0.5 MJC=0.43 +TF=1.2E-9 TR=2400E-9 RCO=14 GAMMA=7E-8 QUASIMOD=1 XTB=1.5 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=18/09/2014 *VERSION=1 * * .MODEL ZXTP19020CFF PNP IS=6.3E-13 NF=1 BF=400 VAF=21.5 ISE=1.2E-13 IKF=4.6 +NE=1.42 BR=140 VAR=4.9 ISC=1.3E-13 NC=1.25 RC=0.0045 RB=0.15 RE=0.009 +CJC=145E-12 MJC=0.33 VJC=0.6 CJE=379E-12 MJE=0.47 VJE=0.85 TF=0.4E-9 +TR=4.5E-9 XTB=1.4 QUASIMOD=1 RCO=0.18 GAMMA=0.3E-9 TRC1=.003 TRB1=.003 +TRE1=.003 * *$ * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=18/09/2014 *VERSION=1 * .MODEL ZXTP19020DFF PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13 + IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15 + RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6 + CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * *$ * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT *DIODES_INC_SPICE_MODEL ZXTP19020DG *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=7/01/2013 *VERSION=1 .MODEL ZXTP19020DG PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13 + IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15 + RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6 + CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *DIODES_INC_SPICE_MODEL ZXTP19020DZ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=7/01/2013 *VERSION=1 .MODEL ZXTP19020DZ PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13 + IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15 + RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6 + CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *ZETEX ZXTP19060CFF Spice Model v1.0 Last Revised 11/09/07 * .MODEL ZXTP19060CFF PNP IS=6E-13 NF=1 BF=385 VAF=55.2 ISE=1.3E-13 IKF=3.8 +NE=1.45 BR=43 VAR=10.4 ISC=1.3E-13 NC=1.18 RC=0.0045 RB=0.15 RE=0.009 +CJC=98E-12 MJC=0.42 VJC=0.66 CJE=360E-12 MJE=0.5 VJE=0.95 TF=0.53E-9 +TR=21E-9 XTB=1.4 QUASIMOD=1 RCO=0.7 GAMMA=7.5E-10 TRC1=.003 TRB1=.003 +TRE1=.003 * *$ * .MODEL ZXTP19060CG PNP IS=6E-13 NF=1 BF=385 VAF=55.2 ISE=1.3E-13 IKF=3.8 +NE=1.45 BR=43 VAR=10.4 ISC=1.3E-13 NC=1.18 RC=0.0045 RB=0.15 RE=0.009 +CJC=98E-12 MJC=0.42 VJC=0.66 CJE=360E-12 MJE=0.5 VJE=0.95 TF=0.53E-9 +TR=21E-9 XTB=1.4 QUASIMOD=1 RCO=0.7 GAMMA=7.5E-10 TRC1=.003 TRB1=.003 +TRE1=.003 * *$ .MODEL ZXTP19060CZ PNP IS=6E-13 NF=1 BF=385 VAF=55.2 ISE=1.3E-13 IKF=3.8 +NE=1.45 BR=43 VAR=10.4 ISC=1.3E-13 NC=1.18 RC=0.0045 RB=0.15 RE=0.009 +CJC=98E-12 MJC=0.42 VJC=0.66 CJE=360E-12 MJE=0.5 VJE=0.95 TF=0.53E-9 +TR=21E-9 XTB=1.4 QUASIMOD=1 RCO=0.7 GAMMA=7.5E-10 TRC1=.003 TRB1=.003 +TRE1=.003 * *$ .MODEL ZXTP19100CFF PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5 + NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014 + QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75 + CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003 + TRE1=0.003 XTB=1.4 * *$ .MODEL ZXTP19100CG PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5 + NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014 + QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75 + CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003 + TRE1=0.003 XTB=1.4 * *$ .MODEL ZXTP19100CZ PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5 + NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014 + QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75 + CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003 + TRE1=0.003 XTB=1.4 * *$ .MODEL ZXTP19100CZ PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5 + NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014 + QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75 + CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003 + TRE1=0.003 XTB=1.4 * *$ *ZETEX ZXTP2006E6 Spice Model v1.0 Last revision 07/06/07 * .MODEL ZXTP2006E6 PNP IS=11E-13 BF=610 NF=1 VAF=20.1 IKF=2.5 ISE=1.1E-13 +NE=1.49 BR=75 NR=1 VAR=4.3 IKR=1 ISC=1.1e-13 NC=1.31 RE=0.0072 RB=0.3 +RC=0.012 CJE=460E-12 VJE=1.0 MJE=0.54 CJC=170E-12 VJC=0.62 MJC=0.42 +TF=9E-10 TR=8.5e-9 RCO=0.5 GAMMA=25E-10 QUASIMOD=1 XTB=1.5 TRE1=.003 +TRB1=.003 TRC1=.003 * *$ * *ZETEX ZXTP2008G Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTP2008G PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * *ZETEX ZXTP2008Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTP2008Z PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * *ZETEX ZXTP2008Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTP2008Z PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * *ZETEX ZXTP2009Z Spice Model v1.0 Last Revised 24/03/2006 * .MODEL ZXTP2009Z PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26 +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3 +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9 +XTB=1.5 * *$ * *ZETEX ZXTP2009Z Spice Model v1.0 Last Revised 24/03/2006 * .MODEL ZXTP2009Z PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26 +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3 +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9 +XTB=1.5 * *$ * *ZETEX ZXTP2012A Spice Model v2.0 Last revision 09/01/07 * .MODEL ZXTP2012A PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * *ZETEX ZXTP2012G Spice Model v2.0 Last revision 09/01/07 * .MODEL ZXTP2012G PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * *ZETEX ZXTP2012Z Spice Model v2.0 Last revision 09/01/07 * .MODEL ZXTP2012Z PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * *ZETEX ZXTP2012Z Spice Model v2.0 Last revision 09/01/07 * .MODEL ZXTP2012Z PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * *ZETEX ZXTP2013G Spice Model v1.0 Last revision 22/12/06 * .MODEL ZXTP2013G PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6 +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019 +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9 +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10 * *$ * *ZETEX ZXTP2013Z Spice Model v1.0 Last revision 22/12/06 * .MODEL ZXTP2013Z PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6 +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019 +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9 +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10 * *$ * *DIODES_INC_SPICE_MODEL ZXTP2014G *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL ZXTP2014G PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL ZXTP2014Z *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL ZXTP2014Z PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL ZXTP2014Z *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL ZXTP2014Z PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZXTP2025F Spice Model v1.0 Last revision 31/03/06 * .MODEL ZXTP2025F PNP IS=6E-13 NF=.996 BF=340 VAF=31 ISE=1.3E-13 IKF=4 +NE=1.7 BR=45 VAR=12 ISC=7E-14 NC=1.7 RC=0.009 RB=.19 RE=0.009 +CJC=130E-12 MJC=0.425 VJC=0.68 CJE=510E-12 MJE=0.4 VJE=0.68 TF=0.75E-9 +TR=11E-9 XTB=1.4 QUASIMOD=1 RCO=0.4 GAMMA=0.5E-9 * *$ * .MODEL ZXTP2027F PNP IS=6.3E-13 NF=1 BF=270 VAF=22 ISE=1E-13 IKF=7 + NE=1.4 BR=120 VAR=8 ISC=1.3E-13 NC=1.5 RC=0.009 RB=0.15 RE=0.013 + CJC=180E-12 MJC=0.36 VJC=0.55 CJE=520E-12 MJE=0.35 VJE=0.8 QUASIMOD=1 + RCO=0.32 GAMMA=4E-10 TF=0.72E-9 TR=4.1E-9 XTB=1.4 * *$ .MODEL ZXTP2027FQ PNP IS=6.3E-13 NF=1 BF=270 VAF=22 ISE=1E-13 IKF=7 + NE=1.4 BR=120 VAR=8 ISC=1.3E-13 NC=1.5 RC=0.009 RB=0.15 RE=0.013 + CJC=180E-12 MJC=0.36 VJC=0.55 CJE=520E-12 MJE=0.35 VJE=0.8 QUASIMOD=1 + RCO=0.32 GAMMA=4E-10 TF=0.72E-9 TR=4.1E-9 XTB=1.4 * *$ *ZETEX ZXTP2029F Spice Model v1.0 Last Revised 15/03/06 * .MODEL ZXTP2029F PNP IS=470E-15 NF=1 BF=270 VAF=72 ISE=100E-15 +IKF=18 NE=1.46 +NR=1 BR=22 VAR=16 ISC=470E-15 IKR=1 NC=1.37 RC=0.01 +RB=0.15 RE=0.02 CJC=130E-12 MJC=0.43 VJC=0.68 CJE=570E-12 MJE=0.4 +VJE=0.68 TF=0.55E-9 TR=25E-9 XTB=1.4 QUASIMOD=1 RCO=1.5 GAMMA=2E-8 * *$ * *ZETEX ZXTP2039F Spice Model v1.0 Last Revised 8/2/06 * .MODEL ZXTP2039F PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * *ZETEX ZXTP2041F Spice Model v1.0 Last Revised 10/03/06 * .MODEL ZXTP2041F PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * *ZETEX ZXTP23015CFH Spice Model v2.0 Last revision 21/05/07 * .MODEL ZXTP23015CFH PNP IS=6.5E-13 BF=470 NF=1 VAF=16.5 IKF=6 ISE=0.6E-13 NE=1.4 +BR=240 NR=1 VAR=3.1 ISC=1.3E-13 NC=1.45 RE=0.0122 RB=0.1 RC=0.0051 +CJE=540E-12 VJE=0.95 MJE=0.3 CJC=202E-12 VJC=0.45 MJC=0.3 TF=0.55E-9 TR=1.4E-9 +TRB1=0.007 XTB=1.4 * *$ * *ZETEX ZXTP23140BFH Spice Model v1.0 Last Revised 04/10/07 * .MODEL ZXTP23140BFH PNP IS=4E-13 NF=1 BF=230 VAF=99 ISE=1.2E-13 IKF=6 + NE=1.4 BR=16 VAR=5.15 ISC=2E-13 NC=1.09 RC=0.0045 RB=0.15 RE=0.014 + QUASIMOD=1 RCO=1.4 GAMMA=7E-9 CJC=103E-12 MJC=0.405 VJC=0.55 CJE=630E-12 + MJE=0.47 VJE=0.95 TF=0.9E-9 TR=5E-8 TRC1=.003 TRB1=.003 TRE1=.003 XTB=1.4 * *$ * *ZETEX ZXTP25012EFH Spice Model v1.0 Last Revised 16/10/07 * .MODEL ZXTP25012EFH PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13 + IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010 + RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35 + VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * *$ * *DIODES_INC_SPICE_MODEL ZXTP25012EZ *SIMULATOR=SIMETRIX *ORIGIN=DZSL *DATE=9Apr2012 *VERSION=1 .MODEL ZXTP25012EFH PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13 + IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010 + RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35 + VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZXTP25015DFH Spice Model v1.0 Last revision 30/05/07 * .MODEL ZXTP25015DFH PNP IS=5E-13 BF=480 NF=1 VAF=18 IKF=2.5 ISE=1.2E-13 +NE=1.48 BR=65 NR=1 VAR=6.9 IKR=1 ISC=8e-14 NC=1.31 RE=0.0125 RB=0.11 +RC=0.0089 CJE=191E-12 VJE=1.05 MJE=0.56 CJC=68E-12 VJC=0.52 MJC=0.31 +TF=3.7E-10 TR=6.5e-9 RCO=0.39 GAMMA=8.5E-10 QUASIMOD=1 XTB=1.5 TRE1=.004 +TRB1=.004 TRC1=.004 * *$ * *ZETEX ZXTP25020BFH Spice Model v1.0 Last revision 19/07/07 * .MODEL ZXTP25020BFH PNP IS=1.7E-13 NF=1 BF=220 IKF=3.3 VAF=21 ISE=8E-14 +NE=1.45 NR=1 BR=44 IKR=1 VAR=7 ISC=8e-14 NC=1.4 RE=0.0133 RB=0.12 +RC=0.0092 RCO=0.5 GAMMA=2.5E-9 CJC=62E-12 MJC=0.33 VJC=0.55 CJE=226E-12 +MJE=0.34 VJE=0.7 TF=4.1E-10 TR=10e-9 XTB=1.5 TRE1=0.002 TRB1=0.002 +TRC1=0.002 QUASIMOD=1 * *$ * *ZETEX ZXTP25020CFF Spice Model v1.0 Last revision 19/07/07 * .MODEL ZXTP25020CFF PNP IS=2.5E-13 BF=400 NF=1 VAF=18.7 IKF=3.8 ISE=1.9E-13 NE=1.5 +BR=110 NR=1 VAR=5 IKR=2 ISC=1.3e-13 NC=1.45 RE=0.01 RB=0.2 RC=0.02 +CJE=199E-12 VJE=0.9 MJE=0.48 CJC=80E-12 VJC=0.53 MJC=0.3 TF=3.8E-10 TR=3.8e-9 +TRB1=.02 XTB=1.5 * *$ * *ZETEX ZXTP25020CFH Spice Model v1.0 Last revision 29/01/07 * .MODEL ZXTP25020CFH PNP IS=2.5E-13 NF=1 BF=400 IKF=3.8 VAF=18.7 ISE=1.9E-13 +NE=1.5 NR=1 BR=110 IKR=2 VAR=5 ISC=1.3e-13 NC=1.45 RB=0.2 RE=0.01 RC=0.02 +CJC=80E-12 MJC=0.3 VJC=0.53 CJE=199E-12 MJE=0.48 VJE=0.9 TF=3.8E-10 +TR=3.8e-9 XTB=1.5 TRB1=.02 * *$ * *ZETEX ZXTP25020DFH Spice Model v1.0 Last revision 20/07/07 * .MODEL ZXTP25020DFH PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49 +NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9 +GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10 +TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 * *$ * *ZETEX ZXTP25020DFL Spice Model v1.0 Last revision 20/07/07 * .MODEL ZXTP25020DFL PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49 +NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9 +GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10 +TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 * *$ * *ZETEX ZXTP25040DFH Spice Model v1.0 Last revision 25/07/07 * .MODEL ZXTP25040DFH PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 +NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 +RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 +TRC1=0.003 QUASIMOD=1 * *$ * *ZETEX ZXTP25040DFL Spice Model v1.0 Last revision 25/07/07 * .MODEL ZXTP25040DFL PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 +NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 +RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 +TRC1=0.003 QUASIMOD=1 * *$ * .MODEL ZXTP25040DZ PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 *ZETEX ZXTP25060BFH Spice Model v2.0 Last revision 29/05/07 * .MODEL ZXTP25060BFH PNP IS=1.5E-13 BF=230 NF=1 VAF=72 IKF=3.5 ISE=8E-14 +NE=1.55 BR=15 NR=1 VAR=8 IKR=1 ISC=8e-14 NC=1.2 RE=0.014 RB=0.11 RC=0.0103 +CJE=239E-12 VJE=0.98 MJE=0.495 CJC=59E-12 VJC=0.51 MJC=0.33 TF=5E-10 +TR=34e-9 RCO=0.85 GAMMA=8.5E-10 QUASIMOD=1 XTB=1.5 TRE1=.008 TRB1=.008 +TRC1=.008 * *$ * *ZETEX ZXTP25100BFH Spice Model v1.0 Last Revised 15/10/07 * .MODEL ZXTP25100BFH PNP IS=2E-13 NF=1 BF=200 VAF=121 ISE=1.6E-14 + IKF=6 NE=1.65 BR=17 VAR=16 ISC=1.4E-13 NC=1.1 IKR=1 RC=0.015 RB=0.2 + RE=0.012 QUASIMOD=1 RCO=3.8 GAMMA=2.5E-8 CJC=49E-12 MJC=0.34 VJC=0.5 + CJE=231E-12 MJE=0.46 VJE=0.9 TF=0.6E-9 TR=6.5E-8 TRC1=0.005 TRB1=0.005 + TRE1=0.005 XTB=1.4 * *$ * .MODEL ZXTP25100CFH PNP IS=2E-13 NF=1 BF=375 VAF=75 ISE=4E-14 IKF=1.4 + NE=1.65 BR=15 VAR=9 ISC=9E-14 NC=1.2 IKR=0.45 RC=0.012 RB=0.3 + RE=0.016 QUASIMOD=1 VO=7 RCO=3.4 GAMMA=0.4E-8 CJC=45E-12 MJC=0.38 + VJC=0.52 CJE=190E-12 MJE=0.46 VJE=0.85 TF=3.9E-10 TR=5.3E-8 TRC1=0.004 + TRB1=0.004 TRE1=0.004 XTB=1.4 * *$ * .MODEL ZXTP25100CFH PNP IS=2E-13 NF=1 BF=375 VAF=75 ISE=4E-14 IKF=1.4 + NE=1.65 BR=15 VAR=9 ISC=9E-14 NC=1.2 IKR=0.45 RC=0.012 RB=0.3 + RE=0.016 QUASIMOD=1 VO=7 RCO=3.4 GAMMA=0.4E-8 CJC=45E-12 MJC=0.38 + VJC=0.52 CJE=190E-12 MJE=0.46 VJE=0.85 TF=3.9E-10 TR=5.3E-8 TRC1=0.004 + TRB1=0.004 TRE1=0.004 XTB=1.4 * *$ * .MODEL ZXTP25100CZ PNP IS=2E-13 NF=1 BF=375 VAF=75 ISE=4E-14 IKF=1.4 + NE=1.65 BR=15 VAR=9 ISC=9E-14 NC=1.2 IKR=0.45 RC=0.012 RB=0.3 + RE=0.016 QUASIMOD=1 VO=7 RCO=3.4 GAMMA=0.4E-8 CJC=45E-12 MJC=0.38 + VJC=0.52 CJE=190E-12 MJE=0.46 VJE=0.85 TF=3.9E-10 TR=5.3E-8 TRC1=0.004 + TRB1=0.004 TRE1=0.004 XTB=1.4 * *$ *ZETEX ZXTP25140BFH Spice Model v1.0 Last Revised 08/10/07 * .MODEL ZXTP25140BFH PNP IS=1.6E-13 NF=1 BF=210 VAF=175 ISE=3E-14 IKF=4.2 + NE=1.4 BR=12 VAR=5.15 ISC=1E-13 NC=1.08 IKR=0.7 RC=0.013 RB=0.2 RE=0.016 + QUASIMOD=1 RCO=4 GAMMA=1.4E-8 CJC=42E-12 MJC=0.32 VJC=0.44 CJE=237E-12 + MJE=0.44 VJE=0.85 TF=0.95E-9 TR=22E-8 TRC1=.005 TRB1=.005 TRE1=.005 XTB=1.4 * *$ * *ZETEX ZXTP25140BFH Spice Model v1.0 Last Revised 08/10/07 * .MODEL ZXTP25140BFH PNP IS=1.6E-13 NF=1 BF=210 VAF=175 ISE=3E-14 IKF=4.2 + NE=1.4 BR=12 VAR=5.15 ISC=1E-13 NC=1.08 IKR=0.7 RC=0.013 RB=0.2 RE=0.016 + QUASIMOD=1 RCO=4 GAMMA=1.4E-8 CJC=42E-12 MJC=0.32 VJC=0.44 CJE=237E-12 + MJE=0.44 VJE=0.85 TF=0.95E-9 TR=22E-8 TRC1=.005 TRB1=.005 TRE1=.005 XTB=1.4 * *$ * * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=21/01/2011 *VERSION=1 * .MODEL ZXTP26020DMF PNP IS=5.5e-13 NF=1.005 ISE=1.2e-13 NE=1.55 BF=590 + VAF=21 IKF=2 ISC=1.8e-13 NC=1.39 BR=52 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=147e-12 VJE=0.88 MJE=0.48 CJC=51e-12 VJC=0.51 + MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 * *$ *TITLE=ZXTP4003Z *DATE=July_2018 *ORIGIN=SH *SIMULATOR=DIODES, SIMETRIX *VERSION=1 .MODEL ZXTP4003Z PNP +CJC=53.8E-12 MJC=0.375 VJC=0.5 CJE=248E-12 MJE=0.44 VJE=0.8 +IS=7E-15 +NF=0.995 ISE=1E-14 NE=1.46 BF=380 +NR=1 ISC=1E-14 NC=1.2 BR=20 +IKF=2.5 IKR=1.5 +RC=0.01 RE=0.04 RB=0.1 +TRE1=0.003 TRB1=0.003 TRC1=0.003 XTB=1 +VAF=55 VAR=6 +RCO=.4 +GAMMA=1E-12 +QUASIMOD=1 +TF=10E-9 TR=20e-9 +NK=0.85 * * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *TITLE=ZXTP5240F *DATE=OCT_2018 *ORIGIN=SH *SIMULATOR=DIODES, SIMETRIX *VERSION=1 .MODEL ZXTP5240F PNP +IS=4E-13 NF=1 BF=650 IKF=1.8 VAF=24 ISE=0.1E-14 +NE=1.49 NR=1 BR=50 IKR=0.6 VAR=4.5 ISC=7.5e-14 NC=1.3 RE=0.014 RB=0.12 +RC=0.0111 RCO=0.95 GAMMA=1E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.4 TRE1=0.003 TRB1=0.003 +TRC1=0.003 QUASIMOD=1 * *$ * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTP5401FL PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTP5401FL PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTP5401G PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTP5401Z PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=22FEB2011 *VERSION=1 * .MODEL ZXTP558L PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTP717MA PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTP718MA PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTP720MA PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTP722MA PNP IS =6.348E-13 BF =450 IKF =1.25 VAF =30.24 + ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 + VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09 + RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 + CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 + TR =57E-9 * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=N/C *4=A *5=K *6=K *7=C1 *8=C1 * .SUBCKT ZXTPS717MC 1 2 3 4 5 6 7 8 Q1 11 1 2 Pmod D1 4 12 S9086 RP1 11 7 0.001 RP2 11 8 0.001 RP3 12 5 0.001 RP4 12 6 0.001 RP5 3 4 1E15 * .MODEL Pmod PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 VAR=5.64 + ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 RC=0.025 CJC=116.9E-12 + MJC=0.3456 VJC=0.4576 CJE=223.6E-12 MJE=0.4803 VJE=0.9091 + TF=1.2E-9 TR=2E-9 .MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p + M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=N/C *4=A *5=K *6=K *7=C1 *8=C1 * .SUBCKT ZXTPS718MC 1 2 3 4 5 6 7 8 Q1 11 1 2 Pmod D1 4 12 S9086 RP1 11 7 0.001 RP2 11 8 0.001 RP3 12 5 0.001 RP4 12 6 0.001 RP5 3 4 1E15 * .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p + M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25 .ENDS * *$ * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=N/C *4=A *5=K *6=K *7=C1 *8=C1 * .SUBCKT ZXTPS720MC 1 2 3 4 5 6 7 8 Q1 11 1 2 Pmod D1 4 12 S9086 RP1 11 7 0.001 RP2 11 8 0.001 RP3 12 5 0.001 RP4 12 6 0.001 RP5 3 4 1E15 * .MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 .MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p + M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25 .ENDS * *$ *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=18/11/2015 *VERSION=1 *PIN ORDER 1:IN 2:GND 3:OUT .SUBCKT ZXTR2105 1 2 3 Q1 1 4 3 ZXTRNPN R1 1 4 13.1K TC1=-0.35m R2 3 2 10Meg D1 2 4 ZXTRdiode .MODEL ZXTRNPN NPN IS=120e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=200 + VAF=10 IKF=500m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01 + RB=0.1 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5 + MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 .model ZXTRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7 + BV=5.44 IBV=10u XTI=12.5) .ENDS .SIMULATOR DEFAULT