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SOT363.pngNRND = Not Recommended for New Design
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This new generation 60V P-Channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to handheld application.
| Compliance (Only Automotive supports PPAP) | On Request |
|---|---|
| CISS Condition @|VDS| (V) | 25 |
| CISS Typ (pF) | 22 |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 0.2 |
| |IDS| @TC = +25°C (A) | N/A |
| PD @TA = +25°C (W) | 0.3 |
| PD @TC = +25°C (W) | N/A |
| Polarity | N+N |
| QG Typ @ |VGS| = 10V (nC) | 0.87 |
| QG Typ @ |VGS| = 4.5V (nC) | 0.43 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | 6000 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 8000 |
| |VDS| (V) | 60 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 2.5 |
