Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOD123-3D-image.pngSchottky
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive supports PPAP) | Standard |
| Configuration | Single |
| MaximumAverageRectifiedCurrent IO (A) | 1 A |
| @ TerminalTemperature TT (ºC) | 60 ºC |
| Peak RepetitiveReverse VoltageVRRM (V) | 40 V |
| Peak ForwardSurge CurrentIFSM(A) | 6.6 A |
| Forward VoltageDrop VF(V) | 0.55 V |
| @ IF (A) | 1 A |
| Maximum ReverseCurrent IR (µA) | 40 µA |
| @ VR (V) | 40 V |
| TotalCapacitance CT (pF) | 120 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
| PCN-2562 | 2022-01-04 | 2022-04-04 | Qualification of Additional Wafer Back Grinding and Back Metal Process Source (GFAB) for Select Discrete Products |
| PCN-2477 | 2020-08-17 | 2021-05-09 | Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi |
