Dual Surface Mount Switching Diode
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AEC Qualified | Yes |
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Compliance (Only Automotive supports PPAP) | Standard |
Configuration | Dual, Series |
Polarity | Anode, Cathode |
Power Rating(mW) | 350 mW |
ESD Diodes (Y|N) | No |
Peak RepetitiveReverse VoltageVRRM (V) | 75 V |
Reverse RecoveryTime trr (ns) | 4 ns |
Maximum Average Rectifier Current IO (mA) | 300 mA |
Maximum Peak Forward Surge Current IFSM (A) | 2 A |
Forward Voltage Drop VF @ IF (mA) | 1 mA |
Maximum ReverseCurrent IR (µA) | 2.5 µA |
TotalCapacitance CT (pF) | 2 pF |
VF(V) Max @ IF=100mA | 1.2 |
V(BR)R (V) Min @IR=100μA | 75@2.5μA |
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω | 4 |
Maximum Reverse Current IR @ VR (V) | 75 V |
VF(V) Max @ IF=1.0mA | 0.82 |
VF(V) Max @ IF=10mA | 0.82 |
IR(nA) Max @ VR=5V | 10 |
IR(µA) Max @ VR=30V | 0.1 |
IR(uA) Max @ VR=80V | 2.5uA@75V |
CT(pF) Max @ VR = 0V, f = 1MHz | 2 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
PCN-2491 | 2020-11-17 | 2021-05-17 | Device End of Life (EOL) |
PCN-2459 | 2020-05-28 | 2020-11-28 | Device End of Life (EOL) |
PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
PCN-2315 | 2018-03-09 | 2018-06-09 | Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility |