Diodes Incorporated — Analog and discrete power solutions
SOT363

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SOT363.png
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BC847PNQ

Complementary, 45V, 0.1A, SOT363

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • Two Internally Isolated NPN/PNP Transistors in One Package
  • Ideal for Medium Power Amplification and Switching
  • Ultra-small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. "Green" Device (Note 3)
  • The BC847PNQ is suitable for automotive applications
  • requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category Small Signal Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN + PNP
VCEO, VCES (V) 45
IC (A) 0.1
ICM (A) 0.2
PD (W) 0.2
hFE (Min) 200, 220
hFE (@ IC) (A) 0.002
hFE (@ IC2) (A) -
VCE(sat) Max (mV) 250, 300
VCE(SAT) (@ IC/IB) (A/mA) 0.01/0.5
VCE(sat) (Max.2) (mV) 600, 650
VCE(sat) (@ IC/IB2) (A/mA) 0.1/5
fT (MHz) 100
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2615 2023-02-02 2023-05-02 Datasheet Revision Due to Maximum VBE(on) Specification Limit Change - Automotive
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)