Back to MOSFET Master Table

BSS123W

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

Contact Sales

Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An automotive-compliant part is available under separate datasheet (BSS123WQ)

Application(s)

Small servo motor controls
Power MOSFET gate drivers
Switching applications

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.17
P_D @T_A = +25°C (W)	0.2
R_DS(ON)Max@ V_GS(10V)(mΩ)	6000 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	10000 mΩ
\|V_GS(TH)\| Max (V)	2 V
C_ISS Typ (pF)	29 @ 25V pF

Technical Documents

SPICE Model

BSS123W.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2458	2020-07-01	2020-10-01	Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.