650V FIELD STOP IGBT
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Anti Parallel Diode | Yes |
---|---|
EOFF typ @ +25°C (mJ) | 0.35 |
EON typ @ +25°C (mJ) | 1.15 |
IC @ +100°C (A) | 40 |
IC @ +25°C (A) | 80 |
Power Dissipation @ TC = +25°C (W) | 341 |
Short Circuit (µs) | 5 |
VCE(sat) max @ +25°C (V) | 2.4 |
VCE(sat) typ @ +25°C (V) | 1.95 |
VCES (V) | 650 |