Diodes Incorporated — Analog and discrete power solutions
SOT23

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DHVSD2004SS

High Voltage Dual Switching Diode

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Feature(s)

  • Fast Switching Speed: Maximum of 50ns
  • High Reverse Breakdown Voltage: 300V
  • Low Leakage Current: Maximum of 100nA when VR = 240V at Room Temperature
  • Extremely Low Reverse Leakage Current for Extended Safe Operating Area Under High Temperature Applications
  • Dual Series Configuration
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DHVSD2004SSQ)

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Configuration Dual, Series
Polarity Anode, Cathode
Power Rating(mW) 325 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 300 V
Reverse RecoveryTime trr (ns) 50 ns
Maximum Peak Forward Surge Current IFSM (A) 4, 1us A
Forward Voltage Drop VF @ IF (mA) 1.0V_100mA mA
Maximum ReverseCurrent IR (µA) 0.1uA_240V µA
V(BR)R (V) Min @IR=150μA 300, 100uA
TotalCapacitance CT (pF) 5 pF
VF(V) Max @ IF=20mA 0.87
VF(V) Max @ IF=100mA 1
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 50
Maximum Reverse Current IR @ VR (V) 0.1uA_240V V
IR(μA) Max @ VR=240V 0.1
CT(pF) Max @ VR = 0V, f = 1MHz 5

Technical Documents

Recommended Soldering Techniques

TN1.pdf