Diodes Incorporated — Analog and discrete power solutions
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DHVSD3004S1

Surface Mount High Voltage Low Leakage Diode

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Feature(s)

  • Low Leakage Current: ≤100nA
  • Fast Switching Speed: ≤50ns
  • High Reverse Breakdown Voltage: ≥350V
  • Ideal for Battery-Powered, Portable Applications
  • Extremely Low Reverse Leakage Current at High Temperature
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3 & 4)
  • An automotive-compliant part is available under separate datasheet (DHVSD3004S1Q)

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Polarity Anode, Cathode
Power Rating(mW) 350 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 350 V
Reverse RecoveryTime trr (ns) 50 ns
Maximum Average Rectifier Current IO (mA) 225 mA
Maximum Peak Forward Surge Current IFSM (A) 4.0A @ 1us, 0.5A @ 1s A
Forward Voltage Drop VF @ IF (mA) 1.15V @ 200mA mA
Maximum ReverseCurrent IR (µA) 0.5 µA
V(BR)R (V) Min @IR=150μA 350
TotalCapacitance CT (pF) 5 pF
VF(V) Max @ IF=20mA 0.87
VF(V) Max @ IF=100mA 0.998
VF(V) Max @ IF=200mA 1.15
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 50ns
Maximum Reverse Current IR @ VR (V) 0.1 µA @ 240V V
IR(μA) Max @ VR=240V 0.1
CT(pF) Max @ VR = 0V, f = 1MHz 5

Technical Documents

Recommended Soldering Techniques

TN1.pdf