COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 100, 100 V |
|VGS| (±V) | 20, 20 ±V |
|IDS| @TA = +25°C (A) | 1.7, 1.7 |
PD @TA = +25°C (W) | 1, 1 |
RDS(ON)Max@ VGS(10V)(mΩ) | 220, 250 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 260, 300 mΩ |
|VGS(TH)| Min (V) | 1,1 V |
|VGS(TH)| Max (V) | 3, 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 4.1, 8.4 nC |
QG Typ @ |VGS| = 10V (nC) | 8.3, 17.5 nC |
CISS Typ (pF) | 340, 1030 pF |
CISS Condition @|VDS| (V) | 50, 50 V |