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SO-8.pngCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 60,60 V |
| |VGS| (±V) | 20,20 ±V |
| |IDS| @TA = +25°C (A) | 6,5 |
| PD @TA = +25°C (W) | 2.0 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 160,250 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 34(6V),70 mΩ |
| |VGS(TH)| Min (V) | 1,1 V |
| |VGS(TH)| Max (V) | 3,3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 14,14.5 nC |
| QG Typ @ |VGS| = 10V (nC) | 32.30.6 nC |
| CISS Typ (pF) | 2110,1525 pF |
| CISS Condition @|VDS| (V) | 30,30 V |
