Diodes Incorporated
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DMG1013T

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up to 3kV
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (DMG1013TQ)

Application(s)

  • DC-DC converters
  • Load switches
  • Power-management functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 6 ±V
|IDS| @TA = +25°C (A) 0.46
PD @TA = +25°C (W) 0.27
RDS(ON)Max@ VGS(4.5V)(mΩ) 700 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 900 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 1300 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.58 nC
CISS Typ (pF) 59.76 pF
CISS Condition @|VDS| (V) 16 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.