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SOT23.pngNRND = Not Recommended for New Design
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This new generation 30V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.
| Compliance (Only Automotive supports PPAP) | On Request |
|---|---|
| CISS Condition @|VDS| (V) | N/A |
| CISS Typ (pF) | N/A |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 3.2 |
| PD @TA = +25°C (W) | 0.76 |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | 8.2 |
| QG Typ @ |VGS| = 4.5V (nC) | 4 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 3 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 90 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 130 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 3 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |
| PCN-2340 | 2018-04-26 | 2018-05-26 | Qualification of Alternate Wafer Sources for Select MOSFET Products |
