Diodes Incorporated — Analog and discrete power solutions
TSOT26

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DMG6602SVT (NRND)

NRND = Not Recommended for New Design

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Description

This new generation 30V N +P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power management functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) DMG6602SVTQ
CISS Condition @|VDS| (V) 15
CISS Typ (pF) 290, 350
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 3.4, 2.8
PD @TA = +25°C (W) 1.112
Polarity N+P
QG Typ @ |VGS| = 10V (nC) 13, 9
QG Typ @ |VGS| = 4.5V (nC) 6
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 60, 95
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) 100, 140
|VDS| (V) 30
|VGS| (±V) 20
|VGS(TH)| Max (V) 2.3

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf