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TSOT26.pngNRND = Not Recommended for New Design
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This new generation 30V N +P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.
| Compliance (Only Automotive supports PPAP) | DMG6602SVTQ |
|---|---|
| CISS Condition @|VDS| (V) | 15 |
| CISS Typ (pF) | 290, 350 |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 3.4, 2.8 |
| PD @TA = +25°C (W) | 1.112 |
| Polarity | N+P |
| QG Typ @ |VGS| = 10V (nC) | 13, 9 |
| QG Typ @ |VGS| = 4.5V (nC) | 6 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | 60, 95 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 100, 140 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 2.3 |
