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DMHT3M70LPSWQ

30V +175?C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON)– Minimizes On State Losses < 1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMTH3M70LPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Body control electronics
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	61
\|I_DS\| @T_C = +25°C (A)	150
P_D @T_A = +25°C (W)	3.85
P_D @T_C = +25°C (W)	-
R_DS(ON)Max@ V_GS(10V)(mΩ)	0.55 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	0.95 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	- mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	- mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	69.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	152.7 nC
C_ISS Typ (pF)	11112 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf