Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

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DMJ7N70SK3 (Obsolete)

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Switching

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) On Request
CISS Condition @|VDS| (V) N/A
CISS Typ (pF) 351
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 3.9
|IDS| @TC = +25°C (A) N/A
PD @TA = +25°C (W) 3.28
PD @TC = +25°C (W) N/A
Polarity N
QG Typ @ |VGS| = 10V (nC) 13.9
QG Typ @ |VGS| = 4.5V (nC) N/A
AEC Qualified No
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 1250
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) N/A
|VDS| (V) 700
|VGS| (±V) 30
|VGS(TH)| Max (V) 4

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf