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DMN10H700S

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Qualified to AEC-Q101 Standards for High Reliability

Application(s)

DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.7
P_D @T_A = +25°C (W)	0.4
R_DS(ON)Max@ V_GS(10V)(mΩ)	700 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	900 (@6V) mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	4.6 nC
C_ISS Typ (pF)	235 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMN10H700S.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products
PCN-2458	2020-07-01	2020-10-01	Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products