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DMN2002UFG

20V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low R_DS(ON)– Ensures On State Losses are Minimized
Small Form Factor, Thermally Efficient Package Enables Higher Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
Power-management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	-
\|I_DS\| @T_C = +25°C (A)	180
P_D @T_A = +25°C (W)	2.2
P_D @T_C = +25°C (W)	-
R_DS(ON)Max@ V_GS(10V)(mΩ)	1.4 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	1.7 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	2.4 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	- mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	53 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	99 nC
C_ISS Typ (pF)	3926 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMN2002UFG.spice.txt

Recommended Soldering Techniques

TN1.pdf