NRND = Not Recommended for New Design
20V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive supports PPAP) | Automotive |
---|---|
CISS Typ (pF) | 400 |
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Configuration | Single |
ESD Diodes (Y|N) | No |
|IDS| @TA = +25°C (A) | 2.8 |
PD @TA = +25°C (W) | 0.7 |
Polarity | N |
Compliance (Only Automotive supports PPAP) | Automotive (Q) |
QG Typ @ |VGS| = 4.5V (nC) | 5.4 |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 93 |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 65 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 56 |
|VDS| (V) | 20 |
|VGS| (±V) | 12 |
|VGS(TH)| Max (V) | 1 |
|VGS(TH)| Min (V) | 0.35 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2485 | 2020-12-04 | 2021-03-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products |