Diodes Incorporated — Analog and discrete power solutions
PowerDI3333 8

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DMN3025LFG

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 30 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 7.5
    PD @TA = +25°C (W) 2
    RDS(ON)Max@ VGS(10V)(mΩ) 18 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 28 mΩ
    |VGS(TH)| Max (V) 2 V
    QG Typ @ |VGS| = 4.5V (nC) 5.3 nC
    QG Typ @ |VGS| = 10V (nC) 11.6 nC
    CISS Typ (pF) 605 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2601 2022-10-28 2023-01-28 Additional Wafer Source for Select Discrete Products
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products
    PCN-2456 2020-05-29 2020-08-29 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products.