N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint.
| Compliance (Only Automotive supports PPAP) | Standard |
|---|---|
| CISS Condition @|VDS| (V) | 15 |
| CISS Typ (pF) | 110 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 3.2 |
| PD @TA = +25°C (W) | 1.38 |
| Polarity | N |
| QG Typ @ |VGS| = 4.5V (nC) | 1.09 |
| QG Typ @ VGS = 5V(nC) | N/A |
| AEC Qualified | No |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 160 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 69 (@8V) |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 110 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 80 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 12 |
| |VGS(TH)| Max (V) | 1.1 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2556 | 2021-11-22 | 2022-05-22 | Device End of Life (EOL) |
