Diodes Incorporated — Analog and discrete power solutions
X2 DFN0606 3

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DMN31D5UFZ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 0.22
PD @TA = +25°C (W) 0.39
RDS(ON)Max@ VGS(4.5V)(mΩ) 1500 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2000 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 3000 mΩ
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.35 nC
CISS Typ (pF) 22.2 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2553 2021-11-12 2022-02-12 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test (A/T) Site with Standardization of Assembly Bill of Materials at CAT for Select Discrete Products
PCN-2498 2021-04-07 2021-04-07 Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products