Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMN52D0UWQ

50V N-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in load switches and level switches.

Feature(s)

  • Low On-Resistance
  • Very Low Gate Threshold Voltage (1.0V max)
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMN52D0UWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Load switches
  • Level switches

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 50 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 0.38 (@ 5V)
PD @TA = +25°C (W) 0.6
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 (@ 5V) mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 4000 mΩ
|VGS(TH)| Min (V) 0.49 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.8 nC
QG Typ @ |VGS| = 10V (nC) 1.4 nC
CISS Typ (pF) 39 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf