NRND = Not Recommended for New Design
N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 50V N-channel enhancement mode MOSFET is designed to minimize RDS(on) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switches.
Compliance (Only Automotive supports PPAP) | Standard |
---|---|
CISS Typ (pF) | 50 |
Compliance (Only Automotive(Q) supports PPAP) | Standard |
ESD Diodes (Y|N) | Yes |
|IDS| @TA = +25°C (A) | 0.3 |
PD @TA = +25°C (W) | 0.35 |
Polarity | N |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 3000 |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 2500 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 2000 (@5V) |
|VDS| (V) | 50 |
|VGS| (±V) | 20 |
|VGS(TH)| Max (V) | 1 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2579 | 2022-08-29 | 2023-02-28 | Device End of Life (EOL) |
PCN-2456 | 2020-05-29 | 2020-08-29 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products. |