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DMN6040SSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld and lighten application

Application(s)

Backlighting

Power Management Functions

DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	5.5
P_D @T_A = +25°C (W)	2
R_DS(ON)Max@ V_GS(10V)(mΩ)	40 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	55 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	10.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	22.4 nC
C_ISS Typ (pF)	1287 @ 25V pF

Technical Documents

SPICE Model

DMN6040SSS.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products