Diodes Incorporated — Analog and discrete power solutions
SOT363

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DMN61D9UDW (NRND)

NRND = Not Recommended for New Design

DUEL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • ESD Protected Up To 2kV

Application(s)

  • Motor Control
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Condition @|VDS| (V) 30
CISS Typ (pF) 28.5
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 0.35
PD @TA = +25°C (W) 0.41
Polarity N+N
QG Typ @ |VGS| = 4.5V (nC) 0.4
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 3500
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 (@5V)
|VDS| (V) 60
|VGS| (±V) 20
|VGS(TH)| Max (V) 1

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2579 2022-08-29 2023-02-28 Device End of Life (EOL)
PCN-2456 2020-05-29 2020-08-29 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products.