60V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 60V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.4 |
| PD @TA = +25°C (W) | 0.84 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 3000 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 4000 (@5V) mΩ |
| |VGS(TH)| Max (V) | 2 V |
| CISS Typ (pF) | 25 @ 25V pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2498 | 2021-04-07 | 2021-04-07 | Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products |
| PCN-2299 | 2018-03-01 | 2018-06-01 | Additional Qualified (A/T) Assembly Test Site |
