Diodes Incorporated — Analog and discrete power solutions
U WLB1515 9

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DMP1018UCB9 (Obsolete)

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection
  • Product Specifications

    Product Parameters

    Compliance (Only Automotive supports PPAP) Standard
    CISS Condition @|VDS| (V) 6
    CISS Typ (pF) 457
    Compliance (Only Automotive(Q) supports PPAP) Standard
    ESD Diodes (Y|N) Yes
    |IDS| @TA = +25°C (A) 5.5
    PD @TA = +25°C (W) 1.8
    Polarity P
    QG Typ @ |VGS| = 4.5V (nC) 4.9
    AEC Qualified Yes
    RDS(ON)Max@ VGS(2.5V)(mΩ) 22
    RDS(ON)Max@ VGS(4.5V)(mΩ) 18
    |VDS| (V) 12
    |VGS| (±V) 6
    |VGS(TH)| Max (V) 1.3
    |VGS(TH)| Min (V) 0.4

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2556 2021-11-22 2022-05-22 Device End of Life (EOL)