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SOT23.pngNRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 20V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to handheld applications.
| Compliance (Only Automotive supports PPAP) | No |
|---|---|
| CISS Condition @|VDS| (V) | 10 |
| CISS Typ (pF) | 443 |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 3.5 |
| PD @TA = +25°C (W) | 1.2 |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | N/A |
| QG Typ @ |VGS| = 4.5V (nC) | 6 |
| AEC Qualified | No |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 110 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 80 |
| |VDS| (V) | 20 |
| |VGS| (±V) | 10 |
| |VGS(TH)| Max (V) | 1 |
| |VGS(TH)| Min (V) | 0.45 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2389 | 2019-02-05 | 2019-08-05 | Device End of Life |
