P-CHANNEL ENHANCEMENT MODE MOSFET
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AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 20 V |
|VGS| (±V) | 12 ±V |
|IDS| @TA = +25°C (A) | 1.5 |
PD @TA = +25°C (W) | 0.25 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 150 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 200 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 240 mΩ |
|VGS(TH)| Min (V) | 0.45 V |
|VGS(TH)| Max (V) | 1 V |
CISS Typ (pF) | 320 pF |
CISS Condition @|VDS| (V) | 16 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2484 | 2020-11-04 | 2021-02-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Standardization of Assembly Bill of Materials At The Existing CAT Site for Select Discrete Products |
PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
PCN-2374 | 2018-12-07 | 2019-03-07 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Conversion to Palladium Coated Copper Bond Wire with New Molding Compound, and Qualification of Alternative Die Source on Select Products |