Diodes Incorporated — Analog and discrete power solutions
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SO-8.png
Back to MOSFET Master Table

DMP3021SSS

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Ensures On-State Losses Are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 25 ±V
|IDS| @TA = +25°C (A) 10.4
|IDS| @TC = +25°C (A) 39
PD @TA = +25°C (W) 1
PD @TC = +25°C (W) 2.5
RDS(ON)Max@ VGS(10V)(mΩ) 15 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 25 (@5V) mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 17.4 nC
QG Typ @ |VGS| = 10V (nC) 34 nC
CISS Typ (pF) 1799 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC