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DMP3045LFVW

30V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low RDS(on) – Ensures On-State Losses Are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher
    Density End Products
  • Occupies just 33% of The Board Area Occupied by SO-8 Enabling
    Smaller End Product
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5.7
|IDS| @TC = +25°C (A) 19.9
PD @TA = +25°C (W) 2.1
RDS(ON)Max@ VGS(10V)(mΩ) 42 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 65 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 2.1 V
QG Typ @ |VGS| = 4.5V (nC) 6.6 nC
QG Typ @ |VGS| = 10V (nC) 13.6 nC
CISS Typ (pF) 782 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf