30V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 30V P-Channel MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance and ESD Protected Gate, making it ideal for high efficiency power management applications.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.25 |
PD @TA = +25°C (W) | 0.432 |
RDS(ON)Max@ VGS(10V)(mΩ) | 2400 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 4000 mΩ |
|VGS(TH)| Max (V) | 2.4 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.6 nC |
QG Typ @ |VGS| = 10V (nC) | 1.2 nC |
CISS Typ (pF) | 51.2 pF |