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PowerDI3333-8.png40V P-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Yes |
|---|---|
| CISS Condition @|VDS| (V) | 1643 |
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Configuration | Single |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 7.2 |
| PD @TA = +25°C (W) | 1.95 |
| Polarity | P |
| Compliance (Only Automotive supports PPAP) | Yes |
| QG Typ@ VGS = -10V | 33.7 |
| QG Typ@ VGS = -4.5V (nC) | N/A |
| QG Typ @ |VGS| = 10V (nC) | 20 |
| QG Typ @ |VGS| = 4.5V (nC) | 14 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | 25 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 45 |
| |VDS| (V) | 40 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 1.8 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2522 | 2021-08-24 | 2021-11-24 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products |
