Diodes Incorporated
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DMT63M6LPSW

60V, +150°C N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production —
  • Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) — Minimizes Power Losses
  • Low Qg — Minimizes Switching Losses
  • Wettable Flank for Improved Optical Inspection
  • Fast Switching Speed
  • Low Input Capacitance
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • High-frequency switching
  • Sync rectifications
  • DC-DC converters

Product Specifications

Product Parameters

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf