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DMT69M8LSS (NRND)

NRND = Not Recommended for New Design

Inactive Datasheet Archive

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low R_DS(ON) – Ensures On-State Losses Are Minimized
Excellent Q_GD x R_DS(ON) Product (FOM)
Advanced Technology for DC-DC Converters

Application(s)

Power Management Functions
DC-DC Converters
Backlighting

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	No
C_ISS Condition @\|V_DS\| (V)	30
C_ISS Typ (pF)	1925
ESD Diodes (Y\|N)	No
\|I_DS\| @T_A = +25°C (A)	9.8
\|I_DS\| @T_C = +25°C (A)	N/A
P_D @T_A = +25°C (W)	1.6
P_D @T_C = +25°C (W)	N/A
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	33.5
Q_G Typ @ \|V_GS\| = 4.5V (nC)	15.6
AEC Qualified	No
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(10V)(mΩ)	12
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	14
\|V_DS\| (V)	60
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	2

Technical Documents

SPICE Model

DMT69M8LSS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2347	2018-05-22	2018-11-22	Device End of Life (EOL)