Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI5060-8.png

Back to MOSFETs - Automotive

DMTH10H017LPDQ

100V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Evaluation Board User Guides

DDB099R1-User-Guide.pdf (873 KB)

Contact Sales

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Rated to +175°C—Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMTH10H017LPDQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	13
\|I_DS\| @T_C = +25°C (A)	59
P_D @T_A = +25°C (W)	2.6
P_D @T_C = +25°C (W)	93
R_DS(ON)Max@ V_GS(10V)(mΩ)	17.4 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	30.3 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	14.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	28.6 nC
C_ISS Typ (pF)	1986 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Evaluation Board User Guides

DDB099R1-User-Guide.pdf (873 KB)

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile