30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 16 ±V |
|IDS| @TA = +25°C (A) | 15 |
|IDS| @TC = +25°C (A) | 75 |
PD @TA = +25°C (W) | 2.5 |
PD @TC = +25°C (W) | 50 |
RDS(ON)Max@ VGS(10V)(mΩ) | 5.5 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 8.5 mΩ |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 20 nC |
QG Typ @ |VGS| = 10V (nC) | 44 nC |
CISS Typ (pF) | 2370 pF |
CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2522 | 2021-08-24 | 2021-11-24 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products |