Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI5060-8.png

Back to MOSFET Master Table

DMTH6015LPDWQ

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen- and Antimony-Free. “Green” Device
The DMTH6015LPDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
https://www.diodes.com/quality/product-definitions/

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_A = +25°C (A)	9.4
\|I_DS\| @T_C = +25°C (A)	36.3
P_D @T_A = +25°C (W)	2.6
P_D @T_C = +25°C (W)	36.3
R_DS(ON)Max@ V_GS(10V)(mΩ)	20 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	27 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	7.1 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	14.3 nC
C_ISS Typ (pF)	825 pF
C_ISS Condition @\|V_DS\| (V)	30 V

SPICE Model

DMTH6015LPDWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf