80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 80 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 17 |
|IDS| @TC = +25°C (A) | 70 |
PD @TA = +25°C (W) | 2.8 |
PD @TC = +25°C (W) | 50 |
RDS(ON)Max@ VGS(10V)(mΩ) | 6.9 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 10.4 mΩ |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 18.3 nC |
QG Typ @ |VGS| = 10V (nC) | 37.7 nC |
CISS Typ (pF) | 2254 pF |
CISS Condition @|VDS| (V) | 40 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
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PCN-2628 | 2023-05-11 | 2023-08-11 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products |