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DMTH8008SFG

80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
Low R_DS(ON)– Ensures On-State Losses are Minimized
Excellent Q_gd ×R_DS(ON)Product (FOM)
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMTH8008SFGQ)

Application(s)

Backlighting
Power-management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	17
\|I_DS\| @T_C = +25°C (A)	68
P_D @T_A = +25°C (W)	3.2
P_D @T_C = +25°C (W)	50
R_DS(ON)Max@ V_GS(10V)(mΩ)	7 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	10.5 @6V mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	31.7 nC
C_ISS Typ (pF)	1945 pF
C_ISS Condition @\|V_DS\| (V)	40 V

Technical Documents

SPICE Model

DMTH8008SFG.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2628	2023-05-11	2023-08-11	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products