NPN Transistor with Dual series switching Diode
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Integrated one NPN transistor (Q1) and two Switching Diodes (D1,D2) in a single compact package. |
TV and any other Displayers |
Forward VoltageDrop VF(V) | 0.855 |
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Forward Voltage Drop VF @ IF (mA) | 10 |
hFE (min) | 120 |
hFE (@ IC/VCE) (A/V) | 0.01, 1 |
IC (Max) (A) | 0.5 |
Maximum Reverse Current IR (nA) | 25 |
Maximum Reverse Current IR @ VR (V) | 20 |
Peak RepetitiveReverse VoltageVRRM (V) | 75 |
Polarity (BJT/diodes) | NPN+series |
VCE (SAT)Max (mV) | 300 |
VCE(SAT) (@ IC/IB) (A/mA) | -100, -10 |
VCEO (Max) (V) | 80 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2418 | 2019-11-07 | 2020-05-07 | Device End of Life (EOL) |
PCN-2315 | 2018-03-09 | 2018-06-09 | Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility |