DSS2540M

NPN, 40V, 0.5A, DFN1006-3

Datasheet

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Feature(s)

BV_CEO > 40V
I_C = 500mA High Collector Current
I_CM = 1A Peak Pulse Current
P_D = 1000mW Power Dissipation
Low Collector-Emitter Saturation Voltage, V_CE(sat)
60mm²Package Footprint, 13 Times Smaller than SOT23
5mm Height Package Minimizing Off-Board Profile
Complementary NPN Type DSS3540M
Totally Lead Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category	Low Saturation Transistor
Compliance(Only Automotive supports PPAP)	Standard
Polarity	NPN
VCEO, VCES (V)	40
IC (A)	0.5
ICM (A)	1
PD (W)	0.4
hFE (Min)	150
hFE (@ IC) (A)	0.1
h_FE(Min 2)	50
hFE (@ IC2) (A)	0.5
VCE(sat) Max (mV)	200
V_CE(SAT) (@ IC/IB) (A/mA)	0.2/10
VCE(sat) (Max.2) (mV)	250
VCE(sat) (@ IC/IB2) (A/mA)	0.5/50
fT (MHz)	300
RCE(sat) (mΩ)	500

Technical Documents

SPICE Model

DSS2540M.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2299	2018-03-01	2018-06-01	Additional Qualified (A/T) Assembly Test Site
PCN-2305	2018-02-28	2018-05-28	Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices