PNP, 40V, 2A, SOT23
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This bipolar junction transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.
Category | Low Saturation Transistor |
---|---|
Compliance(Only Automotive supports PPAP) | Automotive |
Polarity | PNP |
VCEO, VCES (V) | 40 |
IC (A) | 2 |
ICM (A) | 3 |
PD (W) | 0.73 |
hFE (Min) | 260 |
hFE (@ IC) (A) | 0.5 |
hFE(Min 2) | 100 |
hFE (@ IC2) (A) | 2 |
VCE(sat) Max (mV) | 100 |
VCE(SAT) (@ IC/IB) (A/mA) | 0.1/1 |
VCE(sat) (Max.2) (mV) | 350 |
VCE(sat) (@ IC/IB2) (A/mA) | 2/200 |
fT (MHz) | 100 |
RCE(sat) (mΩ) | 90 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2324 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected Automotive BJT Devices |