Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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DTM3A25P20NFDB

25V PNP Low Sat Transistor with N-Channel MOSFET

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Feature(s)

  • Combination of PNP low VCE(sat) Transistor and N-Channel MOSFET
  • Very low collector-emitter saturation voltage VCE(sat)
  • High Collector Current Capability IC and ICM
  • High Collector Current Gain (hFE) at high IC
  • PD up to 2.47W for power demanding applications

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+PNP
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 0.5 ±V
|IDS| @TA = +25°C (A) 0.63
PD @TA = +25°C (W) 2.47
RDS(ON)Max@ VGS(4.5V)(mΩ) 400 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 700 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 736.6 nC
CISS Typ (pF) 60.67 pF
CISS Condition @|VDS| (V) 16 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2686 2024-07-08 2025-01-07 Device End of Life (EOL)
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products