25V PNP Low Sat Transistor with N-Channel MOSFET
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AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+PNP |
ESD Diodes (Y|N) | No |
|VDS| (V) | 20 V |
|VGS| (±V) | 0.5 ±V |
|IDS| @TA = +25°C (A) | 0.63 |
PD @TA = +25°C (W) | 2.47 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 400 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 500 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 700 mΩ |
|VGS(TH)| Min (V) | 0.5 V |
|VGS(TH)| Max (V) | 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 736.6 nC |
CISS Typ (pF) | 60.67 pF |
CISS Condition @|VDS| (V) | 16 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2686 | 2024-07-08 | 2025-01-07 | Device End of Life (EOL) |
PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |