Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)

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DTM3A25P20NFDB

25V PNP Low Sat Transistor with N-Channel MOSFET

Datasheet

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Feature(s)

Combination of PNP low VCE(sat) Transistor and N-Channel MOSFET
Very low collector-emitter saturation voltage VCE(sat)
High Collector Current Capability IC and ICM
High Collector Current Gain (hFE) at high IC
P_D up to 2.47W for power demanding applications

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N+PNP
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	0.5 ±V
\|I_DS\| @T_A = +25°C (A)	0.63 A
P_D @T_A = +25°C (W)	2.47 W
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	400 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	500 mΩ
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	700 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	736.6 nC
C_ISS Typ (pF)	60.67 pF
C_ISS Condition @\|V_DS\| (V)	16 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2686	2024-07-08	2025-01-07	Device End of Life (EOL)
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products