Diodes Incorporated
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DXTC3C100PD

Complementary, 100V, 3A, PowerDI5060-8

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Feature(s)

  • NPN Transistor:
    • BVCEO > 100V
    • IC = 3A Continuous Collector Current
    • ICM = 8A Peak Pulse Current
    • RCE(SAT) = 90mΩ (Typ)
  • PNP Transistor
    • BVCEO > -100V
    • IC = -3A Continuous Collector Current
    • ICM = -8A Peak Pulse Current
    • RCE(SAT) = 110mΩ (Typ)
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change
    control (i.e. parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified facilities),
    please contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN + PNP
VCEO, VCES (V) 100
IC (A) 3
ICM (A) 8
PD (W) 1.47
hFE (Min) 150, 170
hFE (@ IC) (A) 0.5
hFE(Min 2) 20, 45
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 150, 110
VCE(SAT) (@ IC/IB) (A/mA) 1/10, 0.5/50
VCE(sat) (Max.2) (mV) 330, 360
VCE(sat) (@ IC/IB2) (A/mA) 3/300, 2/200
fT (MHz) 125
RCE(sat) (mΩ) 150, 180

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC