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FZT855Q

NPN, 150V, 5A, SOT223

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Feature(s)

  • BVCEO > 150V
  • IC = 5A High Continuous Collector Current
  • ICM = 10A Peak Pulse Current
  • Very Low Saturation Voltage VCE(sat) < 110mV @ 1A
  • RCE(sat) = 50mΩ for a Low Equivalent On-Resistance
  • HFE Specified Up to 10A for a High Gain Hold-Up
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DIODES™ FZT855Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 150
IC (A) 5
ICM (A) 10
PD (W) 3
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 15
hFE (@ IC2) (A) 5
VCE(sat) Max (mV) 65
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) 110
VCE(sat) (@ IC/IB2) (A/mA) 1/100
fT (MHz) 90
Spice Model FZT855.spice.txt

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Technical Documents

Recommended Soldering Techniques

TN1.pdf