Diodes Incorporated — Analog and discrete power solutions
Back to Transistor (BJT) Master Table

FZT857Q

NPN, 300V, 3.5A, SOT223

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • BVCEO > 300V
  • IC Max. 3.5A High Continuous Collector Current
  • ICM Max. 5A Peak Pulse Current
  • Very Low Saturation Voltage VCE(sat) < 155mV @ 1A
  • RCE(sat) = 87mΩ for a Low Equivalent On-Resistance
  • hFE Specified Up to 3A for a High Gain Hold-Up
  • Complementary PNP Type: FZT957Q
  • Lead-Free Finish; RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device
  • The FZT857Q is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 300
IC (A) 3.5
ICM (A) 5
PD (W) 3
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 15
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 100
VCE(SAT) (@ IC/IB) (A/mA) 0.5/100
VCE(sat) (Max.2) (mV) 230
VCE(sat) (@ IC/IB2) (A/mA) 2/200
fT (MHz) 80
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC