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Back to Thyristor Surge Protection Devices (TSPDs)

TB1300L

Bi-Directional Thyristor Surge Protective Device

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Feature(s)

  • 30A Peak Pulse Current @ 10/1000μs
  • 150A Peak Pulse Current @ 8/20μs
  • 58 - 320V Stand-Off Voltages
  • Oxide-Glass Passivated Junction
  • Bi-Directional Protection In a Single Device
  • High Off-State impedance and Low On-State Voltage
  • Helps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC Part 68, ITU-T K.20/K.21, and UL497B
  • UL Listed Under Recognized Component Index, File Number 156346
  • Lead Free Finish/RoHS Compliant
  • Product Specifications

    Product Parameters

    Configuration Bi-Directional
    Type TSPD
    Junction Temperature TJ Max (°C) 150
    Peak Pulse Current@ 10/1000μsIpp (A) 30 A
    Off-State CapacitanceCO (pF) 60 pF
    Rated Repetitive Off-State VoltageVDRM Max (V) 120 V
    Off-State Leakage Current @ VDRMIDRM Max (µA) 5 µA
    On-State Voltage@ IT = 1AVT Max (V) 3.5 V
    Breakover CurrentIBO Min (mA)VBO Min (V) 50 mA
    Breakover CurrentIBO Max (mA)VBO Max (V) 800 mA
    Holding CurrentIH Min (mA) 150 mA
    Holding CurrentIH Max (mA) 800 mA

    Related Content

    Packages

    Technical Documents

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC